200526821 九、發明說明： 【發明所屬之技術領域】 本發明係有關於一種#用Γ7π l 禋使用02(〇2〇(：1^3 151^)來製造身 結晶矽等單結晶半導髀主 等體時，迠以無錯位來製造大口徑、太 重量之單結晶半導體之製造方法。 【先前技術】 單結晶矽製造方法之一係cz法。 以CZ法來成長單結晶石夕時，無法避免的問題之一，有 種子結晶接觸到熔液時產生在種子結晶固液界面部分之 「錯位」。前述錯位，係在種子結晶接觸到熔液時，因為 誘發於種子結晶内之熱應力所產生。 為了將此錯位穿透到結晶外，需使結晶直徑細小化到〔 4mm，，亦即使其縮頸。第8圖係表示形成結晶直徑為[ 〜4mm之縮頸部21，使錯位穿透到結晶外部。 了疋’近年來有直徑300mm以上大口徑；^晶圓製造之 而求’而要求順利地牽引大口徑大重量之單結晶石夕，當藉 由縮頸處理，使縮頸部直徑縮小至3〜4min時，去除錯位之 物件直徑會太細，而無法避免在製造時大口徑大重量之單 結晶石夕鑄塊會掉落。 (先前技術1 ) 高鑄 有發 加晶 添結 用單 使之 有量 載重 記大 ， 徑 中口 1大 獻使 文， 利晶 專結 ， 之子理 述種處 後矽頸 之縮 硼施 發 之 塊 鑄 引 牽 下 態 狀 之 位 錯 無 於 而 質實 雜須 度無。 濃塊爿 7〇54-6737-PF；Ahddub 200526821 【專利文獻1】 日本特開200卜240493號公報 【發明内容】 【發明所欲解決的課題】 被取入單結晶矽之氧濃度，會 又 ㈢饭屋生於熔液内之對法 所影響，係業界果所周知之事永 Ψ 抑制石英坩堝内產生之對 流的技術，有稱做「施加磁埸臺 媒％牽引法」之技術。其係藉 施加磁場到熔液，抑制熔液中 從甲之對流，以達成結晶穩 長之方法。 ^ 可是，當於縮頸處理中施知辁讲ρ 士 強磁％時，錯位會移動 結晶中心附近，而產生錯位盔 蹄诅無法穿透到側面之問題。盆可 推測為以下原因。亦即，藉由磁場之抑制對流效果，溶液 溫度變動被抑制，所以，縮頸中之結晶直徑、牵引速度之 變動會變小，固液界面形狀會 雙成穩疋之上凸狀，錯位會 垂直移動到固液界面，所， 移動到、、Ό晶中心及無錯位化 皆很困難。 另外，採用上述先前姑# ^ ^ 、 技術1，即使在不實施縮頸處理 下 使用添加有南濃彦雜哲jKHB Jy 辰度雜質獨之石夕種子結晶來牵引單結晶 矽鑄塊，也會產生以下之問題。 ^近年來伴1^ ^牵引結晶之大重量化，熔液量也 會增大。 可是’ #熔液量增大（特別是熔液量在15Gkg以上）時， Γ内Γ度變動會變大，自使種子結晶接觸到溶液後到 移至月工序之間，隨著溫度變動，結晶直徑會急速增大， 7054-6737-PF；Ahddub 6 200526821 :由異常成長’會有錯位被導入之問題。χ，反之，藉由 μ度變動，結晶直徑會細小化到能支撐被牵引單結晶之 徑(对負荷)以下。因此，會產生需重新實施自使：：：: 接觸到熔液工序開始之製程的問題。 。曰曰 本發明係鑑於上述問題，提供一種使用添加有雜質之 種子結晶’於無錯位之狀態下，單結晶時，藉由抑 熔液之溫度變動，因為種子結晶接觸到熔液後之姓曰 直徑急速增大所導致之導入錯位，同_，避免結晶直二: 小到耐負荷以下之單結晶半導體之製造方法。 【用於解決課題的手段】 本發明之第！發明係-種單結晶半導體之製造方法， 使添加有雜質之種子結晶接觸到掛禍内之溶液，藉由牵引 種子結晶來製造單結晶半導體，其特徵在於包含：施加磁 場於㈣之工序；㈣液接觸到種子結晶之卫序；以及在 種子結晶接觸到熔液後’不實施縮頸處理而牵引單結晶半 導體之工序。 本發明之第2發明係如申請專利範圍第i項所述之單 結晶半導體之製造方法’其特徵在於：在使熔液接觸到種 子結晶之前’施加磁場到炫液。 本發明之第3發明係如申請專利範圍第i項所述之單 結晶半導體之製造方法，其特徵在於：磁場強度係15〇〇高 斯以上。 本發明之第4發明係如申請專利範圍第工項所述之單 7054-6737-PF；Ahddub 7 200526821 添加到種子結晶而 結晶半導體之製造方法，其特徵在於 作為雜質之硼的濃度，係lel8at〇ms/cc以上。 項所述之單 晶接觸到熔 本發明之第5發明係如申請專利範圍第1 結晶半導體之製造方法，其特徵在於··種子結 液後之最小結晶直徑係4mm以上。 本發明係藉由自種子結晶接觸到熔液前開始施加磁場 到熔液，纟開始牵引單結晶之時點，抑制熔液之溫度變動 而避免結晶直徑急速增大或結晶直徑變細小。 自施加磁場到熔液開始，到獲得對流被抑制及熔液内 溫度變動被抑制之效果為止，會有時間延遲。施加磁場到 溶液後’大概40分鐘左右，就能獲得上述效果。因此，最 好在種子結晶接觸到熔液之既定時間# ’事先施加磁場到 熔液，以使加上上述時間延遲’ i少於接觸到熔液之時點 能獲得上述效果。 磁場係於種子結晶接觸到熔液後持續施加，至少需要 於轉移至肩工序為止之間，持續施加磁場。 當使用本發明時，熔液内之溫度變動被抑制，種子結 晶接觸到熔液後，|到轉移到平行卫序為止之間，能避免 因為結晶直徑急增所導致的錯位導入現象。 又，能避免結晶直徑因為溫度變動而細小到能支撐牵 引結晶以下之直捏。 藉由本發明就無須縮頸工 觸到溶液以後，在直徑逐漸變 轉移到平行工序，也可以如第 序，所以，可以種子結晶接 大之同時牵引結晶，亦即， 9圖所示，在接觸熔液後， 7054-6737-PF；Ahddub 8 200526821 t 於一定直徑時，再實施結晶成長部22(例如長度約50mm)之 牵引，於確認熔液溫度適當後，再轉移到平行工序。 必須添加於種子結晶之雜質硼B濃度，最好係 lelSatoms/cc以上。其原因在於··在牽引後，使用χ光來 評價種子結晶與接觸熔液後新形成結晶的界面部分時，當 添加le18at〇inS/cc以上雜質硼β到種子結晶時，沒有發現 錯位導入。200526821 IX. Description of the invention: [Technical field to which the invention belongs] The present invention relates to a method for manufacturing single crystal semiconductors, such as crystalline silicon, using Γ7π l 0202 (〇2〇 (: 1 ^ 3 151 ^) In the case of isotopes, a method of manufacturing large-diameter, too-weight single-crystal semiconductors without dislocations. [Previous technology] One of the single-crystal silicon manufacturing methods is the cz method. When the single-crystal stone is grown by the CZ method, it is not possible. One of the problems to avoid is the "dislocation" in the solid-liquid interface of the seed crystal when the seed crystal contacts the melt. The aforementioned dislocation is caused by the thermal stress induced in the seed crystal when the seed crystal contacts the melt. In order to penetrate this dislocation beyond the crystal, it is necessary to reduce the crystal diameter to [4mm, even if it is constricted. Figure 8 shows the formation of a constricted neck 21 with a crystal diameter of [~ 4mm, so that the dislocation passes through. It has penetrated to the outside of the crystal. "In recent years, there is a large diameter of 300mm or more; ^ for wafer manufacturing", and it is required to smoothly pull large-caliber and heavy-weight single-crystal stones. When necking is performed, necking is performed. Reduction in diameter At 3 ~ 4min, the diameter of the dislocated objects will be too small, and it is impossible to avoid the single crystal stone ingots with large diameter and heavy weight from falling during manufacturing. (Previous technology 1) High castings are used for adding crystals and adding knots. Only make it have a large amount of load to remember, and make a great ambassador in the middle of the mouth, a special crystal, the son of the son of the boron contraction of the silicon neck after casting, the state of the dislocation is absent. The quality of impurities is no. Concentrated 爿 70454-6737-PF; Ahddub 200526821 [Patent Document 1] Japanese Patent Application Laid-Open No. 200 240240493 [Summary of the Invention] [Question to be Solved by the Invention] Taken into a single crystal The oxygen concentration of silicon will affect the influence of the rice house born in the melt. It is a well-known thing in the industry. Forever, the technology of suppressing the convection in the quartz crucible is called "applying magnetic media.% Traction method ". It is a method of applying magnetic field to the melt to suppress the convection of the melt from the forma to achieve a stable crystal. ^ However, when the necking process is performed, it is known that the strong magnetism% , The dislocation will move near the center of the crystal and cause the error The problem that the helmet hoof curse cannot penetrate to the side. The basin can be presumed for the following reasons. That is, the temperature change of the solution is suppressed by the convection suppression effect of the magnetic field, so the change in the diameter of the crystal and the traction speed in the necking will be changed. If it becomes smaller, the shape of the solid-liquid interface will become convex and stable, and the dislocation will move vertically to the solid-liquid interface. Therefore, it is difficult to move to the center of the crystal and no dislocation. In addition, the above previously adopted # ^ ^ Technology 1, even without using necking treatment to pull monocrystalline silicon ingots with seed crystals added with Nannohiko sage jKHB Jy Chendo impurity Duzhishixi, will also cause the following problems. ^ In recent years, with the increase in the weight of traction crystals, the amount of melt will also increase. However, when the amount of molten metal is increased (especially when the amount of molten metal is more than 15Gkg), the variation of Γ degree in Γ will increase. After the seed crystal contacts the solution and moves to the monthly process, as the temperature changes, The crystal diameter will increase rapidly, 7054-6737-PF; Ahddub 6 200526821: From abnormal growth, there will be a problem of misalignment being introduced. χ, on the other hand, by varying by μ, the crystal diameter is reduced to a diameter (to the load) that can support the pulled single crystal. Therefore, there is a problem that it is necessary to re-implement the self-actuating :::: process in contact with the beginning of the melt process. . In view of the above-mentioned problems, the present invention provides a seed crystal that is added with impurities in a state of no dislocation. When single crystallizing, the temperature of the melt is suppressed because the seed crystal comes into contact with the melt. The introduction of misalignment caused by the rapid increase of the diameter is the same as _, to avoid crystallization. Second: The manufacturing method of single crystal semiconductors as small as the load resistance. [Means for solving problems] The first aspect of the present invention! The invention is a method for manufacturing a single-crystal semiconductor, in which a seed crystal added with impurities is brought into contact with a solution in a catastrophe, and a single-crystal semiconductor is produced by pulling the seed crystal, which is characterized by: a process of applying a magnetic field to ㈣; ㈣ The liquid contacts the seed crystal; and the process of pulling the single crystal semiconductor without performing necking treatment after the seed crystal contacts the melt. The second invention of the present invention is the method for manufacturing a single crystal semiconductor as described in item i of the scope of the patent application, which is characterized in that a magnetic field is applied to the liquid before the melt is brought into contact with the seed crystal. The third invention of the present invention is the method for manufacturing a single crystal semiconductor as described in item i of the patent application range, and is characterized in that the magnetic field strength is 1 500 Gauss or more. The fourth invention of the present invention is the manufacturing method of single crystal 7054-6737-PF; Ahddub 7 200526821 added to seed crystals as described in the first item of the scope of patent application, which is characterized in that the concentration of boron as an impurity is lel8at 〇ms / cc or more. The single crystal mentioned in the item is in contact with melting. The fifth invention of the present invention is the method for manufacturing a crystalline semiconductor, such as the scope of patent application, which is characterized in that the minimum crystal diameter after the seed solution is 4 mm or more. In the present invention, the magnetic field is applied to the melt before the seed crystal contacts the melt, and when the single crystal starts to be pulled, the temperature of the melt is suppressed to prevent the crystal diameter from rapidly increasing or the crystal diameter becoming smaller. There is a time delay from the start of the application of the magnetic field to the melt until the effects of convection suppression and temperature fluctuation in the melt are obtained. After applying a magnetic field to the solution 'for about 40 minutes, the above effect can be obtained. Therefore, it is preferable to apply a magnetic field to the melt in advance at a predetermined time # 'when the seed crystal contacts the melt, so that the above-mentioned time delay can be added to be less than the time when the melt is contacted. The magnetic field is continuously applied after the seed crystal comes into contact with the melt. At least the magnetic field must be continuously applied until it is transferred to the shoulder process. When the present invention is used, the temperature fluctuation in the melt is suppressed, and after the seed crystal contacts the melt, it is prevented from being introduced due to the rapid increase in crystal diameter due to the sudden increase in crystal diameter. In addition, it is possible to prevent the pinch of the crystal diameter from being small enough to support the pulled crystals due to temperature fluctuation. With the present invention, after the necker does not need to touch the solution, the diameter gradually changes to a parallel process, which can also be the first order, so the crystal can be pulled at the same time as the crystal grows, that is, as shown in Figure 9, After the melt, 7054-6737-PF; Ahddub 8 200526821 t When a certain diameter is reached, the crystal growth section 22 (for example, about 50 mm in length) is pulled. After confirming that the melt temperature is appropriate, it is transferred to a parallel process. The concentration of boron B as an impurity that must be added to the seed crystal, preferably above lelSatoms / cc. The reason is that, after the traction, the x-ray was used to evaluate the interface between the seed crystal and the newly formed crystal after contact with the melt. When the boron β, which is more than 18 inS / cc, was added to the seed crystal, no misalignment was found.
【實施方式】 以下’參照圖面來說明實施形態之裝置。 第1圖係表示本發明實施形態之單結晶牽引裝置之示 意圖。 如第1圖所示，實施形態之單結晶牽引裝置丨，係具備 作為單結晶牵引用容器之㈣（腔體）2。第1圖之單結晶 ，引裝置卜係適合於製造大直徑（例如義m)、大重量之 早結晶碎禱塊。 於爐2内，設有將熔融多結晶石夕原料所成之溶液5 加以收容之石英坩堝3。而且，為了牵引直徑3〇。㈣單結晶 :’ 300公斤左右之多結晶矽係被裝填到石英坩堝3内。石 :Γ3之外側以碳㈣U覆蓋。於石英掛褐3外側側面， :!力:熱熔融石英掛禍3内之多結晶石夕原料的圓筒狀主加 =9。於石英_3底部，設有輔助加熱石英㈣底面， =英掛竭3底部溶液5固化之圓環狀底部加熱器Β。 …9及底部加熱器19之輪出（功率旧)係獨立控 7054-6737-PF；Ahddub 9 200526821 制，獨立調整對於熔液5之加熱量。例如，主加熱器9及 底口P加熱益19之各輸出係被控制，以使檢出熔液5之溫 度，將檢出溫度當作反饋，使熔液5溫度達到目標溫度。 抑而且，於實施形態十，雖然藉由主加熱器9及底部加 …器1 9自外加熱熔液5，但是，加熱機構並不偈限於加 ”、、器也可採用其他加熱機構。例如，也可採用電磁加熱 法或雷射照射加熱法。 於主加熱器9與(：2爐2内壁間，設有保溫筒13。 於石英掛禍3上方設有牵引機構4。牵引機構4係由牽 ❹43前端之種子結晶夹頭4c。種子結晶14 係藉由種子結晶夹頭4c來把 把符於此，牵引軸4a係例如 軸體或繩索，以轴體牵引或以繩索捲揚。 多結晶矽（Si)係於石英坩坰q & * 央坩堝3内被加熱熔融。當熔液5 =度穩定化時’牵引_4會動作，而單結^ 曰 =幻會自熔液5被牽引出。亦即，牵引“下降二 被牵引軸4a前端種子結晶失頭抚 入卜v r丄 处符之種子結晶1 4會浸 入溶液5中。使種子結晶"浸入溶 ： 上升。對應被種子結晶夹頭4。失掊“ 1牵引轴4a會 單結晶碎會成長。牵引時，石英❹種子結晶14的上升， W旋轉速度旋轉。又，牵弓丨二：3藉由旋轉軸10而以 轉軸1 0相同或相反的方向， a係以與旋 ^ 旋轉速度旋轉。 又’旋轉軸10可垂直方向驅 動到任意位置。 ’使石英坩堝3上下移 藉由切斷CZ爐2内部與外如 、大氣之聯繫’CZ爐2内係 7〇54-6737-Pp;Ahddub 1〇 200526821 雉持真空狀態（例如20Torr左右）。亦即’供給惰性氣體氬 氣7到CZ爐2中，CZ爐2以幫浦自排氣口排氣。藉此，cz 爐2内係減壓到既定麼力。 於單結晶牽引工序中批次），於CZ爐2内會產生種 種蒸發物質。於此，供給氬氣7到以爐2内，使蒸發物質 與氬氣7料排以2爐2。氬氣7之供給流㈣依i批次 中各工序而分別設定。 隨著單結晶矽之牵引’熔液5會減少。隨著熔液5之 減少’熔液5與石英掛禍3之接觸面積會改變，自 瑪3產生的氧溶解量會改鐵 野里θ改良。此變化會影響被曰 矽中之氧濃度分佈。於此，Λ τl l 早…曰曰 瓦此為了防止上述現象，也可以蔣 多結晶石夕原料或單結晶石夕斥 曰曰7原枓於牽引後或牽引中，追加 給到熔液5逐漸少的石英坩堝3内。 '、 於石英坩堝3上方，—0 π n ‘ 上方在早結晶矽周圍，設有略成彳到圓 錐座形的遮熱板8(氣體整 固 ，丨L涛）。遮熱板8係被保溫筒j 3 所支撐。遮熱板8，伟徒自 你使自上方供給到cz爐2内而 體氣體的氬氣7，被導引 … R 熔液表面5a中央，而且，通過 熔液表面5a被導引5,丨、吟、六士 . 引到溶液表面5a周緣部。而且，氬氣7， 係與自熔液5蒸發之裔辦 ’、 Ψ。p A 、體，自設於CZ爐2下部之排氣口排 ★月b使液面上之氣體流速穩定化 蒸發出之氧氣保持在穩定狀態。 “使自… 又，遮熱板8，孫蚀& 7 糸使種子結晶1 4與自種子社曰] 的單結晶石夕，不會受石兹批 、檀子^曰曰14成長 、掛禍3、熔液5及主力π数器9箄 高溫部所產生的輻鉍拥k 力…益y #的 、…、衫響。又，遮熱板8，係能防止爐 7054-6737-PF；Ahddub 11 200526821 内產生之雜質（例如矽氧化物）等附著於單結晶矽，而能阻 止妨礙單、、、"“夕培養的因素。遮熱板8下端與溶液表面^ 間之間隙G，可藉由上升下降旋轉軸丨〇，改變石英坩堝3 之上下位置來調整。又，也可以藉由上下移動升降震置爽 調整間隙G。 於CZ爐之外側周圍，設有施加磁場（橫磁場）到石英坩 堝3内熔液5之磁鐵2〇。 、 第2圖係表示種子結晶接觸到熔液5日夺，種子結晶14 前端面與：液5(接觸面)間之溫度差△Κ。。，及種子結晶 14中最高解析剪斷應力MRSS(Mpa)間之關係。所謂種子結 晶14中最高解析剪斷應力MRSS(Mpa)，係接觸到熔液5時 施加在種子結晶14上之熱應力最高值，其表示因為熱衝擊 而導入錯位到種子結晶丨4中之指標。第2圖係晝出藉由熱 傳解析計算（FEMAG)算出之溫度差ΔΤ，及藉由熱傳解析計 异（FEMAG)算出之最高解析剪斷應力mrss。 如第2圖所示，當溫度差△ τ愈小時，種子結晶丨4中 最高解析剪斷應力MRSS會愈小，因熱衝擊所導致之錯位較 不易導入種子結晶14中。 另外，本發明人之先前發明（日本特願2002-204178號） 中’開示有添加到種子結晶1 4中之雜質（例如硼]g )濃度c、 種子結晶14尺寸（直徑D)、臨界解析剪斷應力（cRSS ; Mpa) 與容許溫度差△ Tc間之關係。 亦即，使種子結晶14尺寸（直徑D)(mm)為橫軸，接觸 溶液時之種子結晶1 4前端溫度與熔液5 (接觸面）溫度間之 7054-6737-PF；Ahddub 12 200526821 容許溫度差△ Tc為縱軸，直徑D與容許溫度差△ Tc間之對 應關係以特性Ll，L2, L3表示。如特性Ll，L2, L3所示，種 子結晶直徑D與容許溫度差△ Tc之間約略成反比關係。亦 即’隨著種子結晶直徑D變大，施加在接觸溶液時之種子 結晶1 4上之熱衝擊應力會變大，對應於此，有必要減少容 許溫度差ATc。 於此，所謂容許溫度差△ Tc，係不會使錯位導入種子 結晶1 4之上限溫度差。 ， 特性L1，L2，L3,係表示種子結晶14機械強度指標之一 的臨界解析剪斷應力（CRSS; Mpa)大小之不同。所謂臨界解 析剪斷應力（CRSS)，係當超過應力時，錯/ 丨θ守入種子έ士 晶14之臨界應力。於圖中’特性L1係臨界解析： (CRSS)為最小（5MPa)、特性L2係臨界解析剪斷應力（c·'、 比特性L1大小(10MPa)、特性L3係臨界解析剪斷 為最大小（15MPa)。 臨界解析剪斷應力（CRSS)，係因為添加到種子沾曰 之雜質種類、濃度C而改變。於本實施 ％明14 m 預設為硼B。 雜質種 對應添加到種子結晶14之雜質濃度 .‘— 交向，臨 界解折 剪斷應力（CRSS)也會變大。添加到種子姓 厂、、、°晶1 4之雜陆 C對應Cl，C2, C3逐漸變高，特性變為u l2 L ’、質濃度 3圖中，雖然雜質濃度C以3種來代表，作曰’。而且於第 雜質濃度C之更多階段或連續性改變 可以對應 或連續性改變。 $夕階段 7054-6737-PF/Ahddub 13 200526821 因此田種子結晶j 4直徑d為γ丨， 質濃度C為Cl β …，σ D, 3時，對應雜 許溫度差Me會變大。又 ，，、、，L2，L3,所以，容 時，對應種子社日u古/ °十，凰度差ATc係例如 裡卞、、、口日日14直徑D為以 L1,L2,L3 ,·μ ^ ^ „ ，2，D3,特性會改變為 斤以雜質濃度c為C1，C2 C3。 雖然說明過雜質種類為硼β之 外’使錄Ge或銅Ιη等各 I，但是，於硼Β之 可獲得相同關係。 雜質添加到種子結晶14時，也 因此，添加既定濃度c到種子結a 直徑為既定值D時之容許溫度i 種子結晶1 4 特性u，L2，L3來求得，可自第3圖所示之 接觸熔液時之種子加熱器9’19電力’以使 丁心裡卞、、、0日日！ 4與熔液5 度差△ Tc以下時，盔項者祐 皿又差△丁為容許溫 子結晶14。 处理就此防止錯位導入種 a ::有」el8atoms/cc雜質…直徑―種子結 日日 中，谷許溫度差ΔΤ(：為l〇〇t，當$举&Λ „[Embodiment] Hereinafter, an apparatus according to an embodiment will be described with reference to the drawings. Fig. 1 is a schematic view showing a single crystal traction device according to an embodiment of the present invention. As shown in Fig. 1, the single crystal pulling device of the embodiment is provided with a container (cavity) 2 as a container for single crystal pulling. The single crystal of Fig. 1 and the lead device are suitable for manufacturing early-crystallized broken prayer blocks with large diameter (such as Ym) and heavy weight. In the furnace 2, a quartz crucible 3 containing a solution 5 of molten polycrystalline stone material is contained. Moreover, in order to pull the diameter of 30. ㈣Single crystal: ′ About 300 kg of polycrystalline silicon is charged into the quartz crucible 3. Stone: The outer side of Γ3 is covered with carbon ㈣U. On the outer side of the quartz hanging brown 3,:! Force: Cylindrical main plus of polycrystalline stone material in the hot fused quartz hanging disaster 3 = 9. At the bottom of quartz_3, there is an auxiliary bottom heating heater B, which is used to heat the bottom of quartz ㈣. … 9 and the output of the bottom heater 19 (old power) are independently controlled by 7054-6737-PF; Ahddub 9 200526821, independently adjust the heating amount for melt 5. For example, each output of the main heater 9 and the bottom port P heating 19 is controlled so that the temperature of the melt 5 is detected, and the detected temperature is used as a feedback to make the temperature of the melt 5 reach the target temperature. In addition, in the tenth embodiment, although the melt 5 is heated from the outside by the main heater 9 and the bottom adder 19, the heating mechanism is not limited to adding, and other heating mechanisms may be used. For example, It can also adopt electromagnetic heating method or laser irradiation heating method. Between the main heater 9 and (: 2 furnace 2 inner wall, there is a thermal insulation tube 13. A traction mechanism 4 is placed above the quartz hanging disaster 3. The traction mechanism 4 series The seed crystal chuck 4c at the front end of the pull pin 43. The seed crystal 14 uses the seed crystal chuck 4c to place the handle there, and the traction shaft 4a is, for example, a shaft body or a rope, which is pulled by the shaft body or hoisted with a rope. Crystalline silicon (Si) is heated in the quartz crucible q & * The central crucible 3 is melted. When the melt 5 = degree stabilized, 'traction_4 will act, and the single junction ^ = magical self-melt 5 It is pulled out. That is, the traction "drops two, the seed crystal at the front end of the traction shaft 4a loses its head, and the seed crystals 1 and 4 of the amulet are immersed in the solution 5. The seed crystals are immersed and dissolved: rise. Corresponding to Seed crystallization chuck 4. Lost 掊 1 traction shaft 4a will grow single crystals and will grow. During traction, The rise of the quartz crystal seed crystal 14 rotates at the W rotation speed. Moreover, the draw bow 丨 2: 3 is rotated in the same direction as the rotation shaft 10 by the rotation shaft 10, and a is rotated at the rotation speed of the rotation ^. The shaft 10 can be driven to any position in the vertical direction. 'Move the quartz crucible 3 up and down by cutting the connection between the inside of the CZ furnace 2 and the outside and the atmosphere.' The inside of the CZ furnace 2 is 0754-6737-Pp; Ahddub 1〇200526821 Hold the vacuum state (for example, about 20 Torr). That is, 'inert gas argon 7 is supplied to the CZ furnace 2, and the CZ furnace 2 exhausts from the exhaust port of the pump. By this, the pressure inside the cz furnace 2 is reduced to a predetermined value. In the single crystal traction process batch), various evaporation substances will be generated in the CZ furnace 2. Here, argon gas 7 is supplied into the furnace 2 and the evaporation substances and the argon gas 7 are arranged in the 2 furnace 2 The supply flow of argon 7 is set according to each process in batch i. With the pull of single crystal silicon, the melt 5 will decrease. As the melt 5 decreases, the melt 5 and the quartz 3 will fall. The contact area will change, and the amount of dissolved oxygen produced by Ma 3 will be improved by Tieyeli θ. This change will affect the oxygen concentration in the silicon In order to prevent the above phenomenon, Λ τl l can be used to prevent the above-mentioned phenomenon. You can also add polycrystalline stone material or single crystal stone material to the 7th element after traction or during traction, and add it to the melt. 5 Gradually less in the quartz crucible 3. ', Above the quartz crucible 3, -0 π n' Above the early crystalline silicon, there is a heat shield 8 (gas consolidation, 丨 L ). The heat shield plate 8 is supported by the thermal insulation tube j 3. The heat shield plate 8 is used by you to guide the argon gas 7 which is supplied into the cz furnace 2 from above ... R Melt surface 5a In the center, it is guided through the molten surface 5a by 5, 丨, Yin, Liu Shi. It is led to the peripheral portion of the solution surface 5a. Moreover, the argon gas 7 is related to the evaporation of the molten metal 5 ', Ψ. p A, body, exhaust from the exhaust port located in the lower part of the CZ furnace 2 ★ month b stabilizes the gas flow rate on the liquid surface The evaporated oxygen is maintained in a stable state. "Make self ... Also, the heat shield 8, Sun eclipse & 7 糸 Crypto seed crystallized 1 and 4 from the Zi seed company] single crystal stone eve, will not be approved by Shi Zi, Tanzi ^ said 14 grow, hanging Disaster 3. Melt 5 and the radiating bismuth holding force generated by the high temperature part of the main force π counter 9 箄 ... y #, ..., shirt ringing. Also, the heat shield 8 can prevent the furnace 7054-6737-PF ; Impurities (such as silicon oxide) generated in Ahddub 11 200526821 are attached to the single crystal silicon, and can prevent the factors that hinder the single, "" The gap G between the lower end of the heat shield 8 and the solution surface ^ can be adjusted by changing the up and down position of the quartz crucible 3 by raising and lowering the rotation axis. In addition, the clearance G can also be adjusted by moving the lifting vibration up and down. Around the outside of the CZ furnace, a magnet 20 for applying a magnetic field (transverse magnetic field) to the melt 5 in the quartz crucible 3 is provided. Figure 2 shows the temperature difference between the front surface of the seed crystal 14 and the liquid 5 (contact surface) △ K when the seed crystal contacts the melt for 5 days. . , And the relationship between the highest analytical shear stress MRSS (Mpa) in seed crystal 14. The so-called highest analytical shear stress MRSS (Mpa) in seed crystal 14 is the highest value of thermal stress applied to seed crystal 14 when it comes into contact with melt 5. It indicates the index that is dislocated into seed crystal due to thermal shock. 4 . Figure 2 shows the day-to-day temperature difference ΔT calculated by FEMAG and the highest analytical shear stress mrss calculated by FEMAG. As shown in Fig. 2, as the temperature difference Δτ is smaller, the highest analytical shear stress MRSS in the seed crystal 4 becomes smaller, and the dislocation due to thermal shock is less likely to be introduced into the seed crystal 14. In addition, in the previous invention of the present inventor (Japanese Patent Application No. 2002-204178), the concentration c of the impurity (for example, boron) g added to the seed crystal 14 is disclosed, the seed crystal 14 size (diameter D), and the critical analysis The relationship between the shear stress (cRSS; Mpa) and the allowable temperature difference △ Tc. That is, the size (diameter D) (mm) of the seed crystal 14 is the horizontal axis, and the seed crystal 14 when contacting the solution is between 7054-6737-PF between the front end temperature and the melt 5 (contact surface) temperature; Ahddub 12 200526821 allows The temperature difference Δ Tc is the vertical axis, and the corresponding relationship between the diameter D and the allowable temperature difference Δ Tc is expressed by characteristics L1, L2, L3. As shown by characteristics L1, L2, L3, the seed crystal diameter D is approximately inversely proportional to the allowable temperature difference ΔTc. That is, as the seed crystal diameter D becomes larger, the thermal shock stress on the seed crystal 14 when it is contacted with the solution becomes larger, and accordingly, it is necessary to reduce the allowable temperature difference ATc. Here, the allowable temperature difference Δ Tc is an upper limit temperature difference that does not cause dislocations to be introduced into the seed crystal 14. The characteristics L1, L2, and L3 are different in the critical analytical shear stress (CRSS; Mpa), which is one of the mechanical strength indexes of seed crystal 14. The so-called Critical Solution Shear Stress (CRSS) is the critical stress at which the error / θ is trapped in the seed crystal 14 when the stress is exceeded. In the figure, the critical analysis of characteristic L1 series: (CRSS) is the minimum (5 MPa), the critical analytical shear stress of characteristic L2 system (c · ', the ratio of characteristic L1 (10 MPa), and the critical analytical shear of characteristic L3 system is the maximum (15MPa). Critical analytical shear stress (CRSS) is changed by the type and concentration C of impurities added to the seed. In this implementation, 14 m is preset to be boron B. The impurity species is added to the seed crystal 14 Impurity concentration .'— The cross direction, the critical unfolding shear stress (CRSS) will also increase. The mixed land C added to the seed name plant, °, ° crystal 14 corresponding to Cl, C2, C3 gradually increased, characteristics It becomes u l2 L 'and the mass concentration in the figure 3, although the impurity concentration C is represented by three kinds, it is said as'. And more stages or continuous changes in the impurity concentration C can be correspondingly or continuously changed. Stage 7054-6737-PF / Ahddub 13 200526821 Therefore, when the field seed crystal j 4 diameter d is γ 丨 and the mass concentration C is Cl β…, σ D, 3, the corresponding heterogeneous temperature difference Me will become larger. Also ,,,, ,, L2, L3, so, Rongshi, corresponding to the seed society date u ancient / ° ten, the degree of difference between the ATc system such as Li, The diameter D of the mouth day 14 is L1, L2, L3, μ ^ ^ ^ 2, 2, D3, and the characteristics will change to the concentration of the impurity c as C1, C2 C3. Although the impurity type is described as boron β In addition, each I such as Ge or copper Ιη is recorded, but the same relationship can be obtained for boron B. When impurities are added to seed crystal 14, it is also allowed to add a predetermined concentration c to the seed junction a when the diameter is a predetermined value D The temperature i seed crystal 1 4 characteristics u, L2, L3 can be obtained from the seed heater 9'19 electric power 'when contacting the melt as shown in Fig. 3, so that Ding Xin will be able to sing, 0, and 0! When the temperature is 5 degrees below △ Tc, the helmet of the helmet is worse than △ D is the allowable temperature of crystallization. 14. The treatment prevents misalignment and introduces the species a ::: "el8atoms / cc impurities ... diameter-the date of the seed. , Gu Xu temperature difference ΔΤ (: is l0t, when $ Lift & Λ
田5馬整各加執q 1Q 電力，以使接觸熔液時之種子結晶14與_ 5之溫度’ :·:容：溫度差ΔΤ·)以下時，無須實施縮頸處理， 就月b穩疋而無錯位化。 &第4圖係表示施加到溶液5之磁場對上述溫度差μ 影響的實驗結果。於此實驗中，使用添加有 雜質竭直徑7Μ之石夕種子結晶14(容許溫度差η為 100C)’㈣子結晶14接觸溶液5時之對底部加孰器19 之投入電力OW及對主加熱器9之投入電力（Kw)實施種種 7054-6737-PF;Ahddub 14 200526821 測試（1 )〜（6 )，合以碰媒 田以磁鐵20施加磁場強度3〇〇〇(Gauss)磁 場到溶液5 (測試f 4、~ r R+ 、 C ) (6))時，及不施加磁場到熔液5 (測 試（1 )〜（3 ))時，古周杳御/ ㉟查錯位疋否導入矽種子結晶1 4。於第4 圖中’對於錯位有導入矽種子結晶14而單結晶矽係有錯位 化者‘ δ己X符號；對於錯位無導入石夕種子結晶i 4而單結 晶矽係無錯位化者，標記0符號。於實驗中，裝填300Kg 多結晶矽，牵引直徑3〇〇_之單結晶矽。又於實驗中， 使投入底部加熱器19之電力固定在各值(OKW、l〇Kw、 35Kw)’以閉回路控制系統控制投入主加熱器9之電力，以 使熔液5中之種子結晶丨4接觸的液面為目標溫度（例如 1 340〇C ) 〇 如第4圖所示，當不施加磁場到熔液5(測試 時，僅有調整對底部加熱器19之投入電力為〇(Kw)，調整 對主加熱器9之投入電力為138(Kw)時之測試（3)，其溫度 差為容許溫度差Δ Τ(：(1()(Γ(：)以下之95 6rc)，而確認為無 錯位化，此外的使投入底部加熱器19之電力為以上 (l〇Kw、35Kw)之測試（1)〜（2)中，溫度差（ln. 、ι〇3 2 C)超過谷許溫度差atc，而確認出有錯位化。 相對於此，於施加磁場到熔液5之情形下（测試（〇〜 (6))，無論對底部加熱器19及主加熱器9之投入電力（投 入電力比率）為何，都能獲得容許溫度差△ Tc(1〇〇c>c )以下 之溫度差（92.21、82.5t：、78.5。〇,在上述全部測試中， 都能確認無錯位化。特別是使對主加熱器9 ^ l ^ 〜仅入電力為 比OKw還要高之值（10Kw、35Kw)的測試中，相啦_丄 τ $目對於夫施如 7054-6737-PF；Ahddub 15 200526821 磁場而有錯位化者，當施加磁場時，就能確認其無錯位化。 而且’於第2圖中，第4圖實現無錯位化之點則標記〇符 號’有錯位化之點則標記X符號。 如上所述，藉由施加磁場到熔液5，無論對加熱器之投 入電力為何，都能很容易實現無錯位化之理由，說明如下。 亦即，藉由施加磁場到熔液5，熔液5内之對流被抑 制。因此，熔液5内之熱傳被抑制，熔液5第j圖中橫向 溫度差變大，熔液5中之接觸種子結晶14部分（接觸面）溫 度會降低。藉此，為了維持熔液5該接觸面之目標溫度， 投入主加熱器9之電力會轉而上升。當投入主加熱器9之 電力上升時，藉由輻射熱增大，種子結晶14溫度會上升， 種子結晶14溫度會接近熔液5(比種子結晶14溫度還要高） 之溫度，溫度差△ τ會縮小。因此，種子結晶14中之最高 解析剪斷應力MRSS(MPa)，亦即伴隨接觸熔液之熱應力最Z 值會變小，錯位更難導入。 而且，施加在熔液5上之磁場強度最好為l5〇〇(huss) 以上。其原因在於：磁場強度為1〇〇〇〜15〇〇((^^3)時，熔 液5中的溫度變動會變得激烈而出現不穩定部位，會有結 晶直徑變動之問題’於1〇〇〇(Gauss)以下時，抑制對流的效 果报小，所以，結晶直徑之控制性报差。 於本實施例中，使磁場自種子結晶14接觸溶液5以前 就施加。 以前就施加磁 點，能抑制熔 其原因在於：自種子結晶14接觸熔液5 場到熔液5，藉此，於開始牽引單結晶矽之時 7054-6737-PF;Ahddub 16 200526821 液5之溫度變動，避免結晶粒徑急增或結晶直徑變小的 題。 、4 自施加磁場到熔液5開始，到獲得對流被抑制，熔液口 内之溫度變動被抑制的效果為止，有時間延遲。施加磁p 到熔液5後，大概經過40分鐘，就有上述效果。因此，^ 好加上此時間延遲，在種子結晶接觸熔液的既定時間前，= 施加磁場到熔液5，以使至少在種子結晶接觸熔液時，有該 磁場在種子結晶 轉移到平行工序為止 成結束為止。 (實施例1) 接觸熔液後，持續施加，至少施加到 。最好持續施加磁場，直到直胴部形 _於實施例i中，使用添加有5el8atoms/cc雜質硼 直徑7mm之矽種子結晶14(容許溫度差△ Tc係1〇〇它）。 自種子結晶14接觸熔液5的超過4〇分鐘之前，開始 以磁鐵20施加磁場到熔液5，之後，到矽單結晶成長二^ 為止（石夕單結晶直胴部形成結束為止），持續施加磁場強°度 30 0 0 (Gauss)之磁場（橫向磁場）。亦即，在種子結晶η接 觸熔液前施加之磁場強度，係與單結晶成長時施加之磁場 強度相同。 在種子結晶14接觸炼液5之時，投入底部加熱器19 之電力固定為35Kw。 而且，使投入主加熱器9之電力以閉回路控制系统來 控制，以使熔液5中之與種子結晶14的接觸面成為目標溫 7054-6737-Pp;Ahddub 17 200526821 又（Ο 士 1 340 c )。因此，投入底部加熱器丨9之電力（Kw) 及投入主加熱器9之電力(“），分別與第4圖所示之測試 (4)相同，成為35(Kw)及U2(Kw)，接觸熔液時之種子結晶 一熔液5之服度差ΔΤ成為容許溫度差川。匸）以下 之值（92.2X：) ’能抑制錯位導入種子結晶14。 ▲種子結晶Η接觸到熔液5後，無須實施縮頸處理，就 此牽引單結晶彳。種子結晶接㈣液後，單結晶砍之牵引 也會持續’控制投入主加熱…電力，以使投入底部加 熱盗19之電力（Kw)與接觸熔液時相同地維持電力35(Kw) 之情形下’熔液5的溫度成為目標溫度。 ^果，無須實施縮頸處理，能在無錯位之情形下培養 早 ν、ϋ 晶 。 藉由本實施例，因為無須 ^ ^ 肩細頌處理，使種子結晶14接 觸熔液5後，可以在直徑逐漸 ㈣…I 丁 、漸擴大之同時，牽引結晶，亦 即轉移到平打工序，也可以如 ,^ . y ^ 圖所不，接觸熔液後以 ώ 攻長°卩22(例如長度約5〇mm)，在確 涊熔液溫度適當後，再轉移至 吉n r， 序。結晶成長部2 2之 直瓜（最小結晶直徑）最好係4mm以上。 特別是當使用本實施例時， 之睥it卜、广q命 《種子、、、°晶1 4接觸熔液5 之時點，熔液5内之溫度變動被抑制，所 接觸熔液後，能避免於轉移至 千、、·=日日14 ，而㈣m 移至千仃工序為止間結晶粒徑急 增而導致導入錯位。又，士 勒 & 免因為結晶粒徑之溫度變 動’結晶粒徑細小龍切牵引結晶之直徑以下。 第7圖係表示石夕結晶吉你 曰日直後與耐負荷間之關係之曲線 7054-6737-PF；Ahddub 18 200526821 圖。對應石夕單、结晶之直徑（轉移 徑），可決定出耐負荷。當使用太=序為止間之最細直 不會細小到種子妹曰14言" 施例時，發單結晶直徑 产、 直徑以下，能維持種子結晶“吉 徑，所以，對應要牽引的矽單結晶重一 έ士曰1 4亩庐B韋处 （僅）而設定種子 時、不破斷地確實牽引大口經、大重量的败 單結晶。 大重里的矽 又，S使用本實施例時，於 士曰 、種子、、Ό日日接觸溶液時及之 後’在投入底部加熱器19之電力不變之情形下，能實現被 牽引出之早結晶石夕的無錯位化’戶斤以，加熱器之調整作業 變得簡易，作業者的負擔會減輕。 ’、 Λ千工入，田使用本實施例時， 於種子結晶接觸熔液時及之後，在投入底部加熱器19之電 力維持準位以上（35Kw)之情形下，能實現被牵引出之 早結晶石夕的無錯位化…，能避免因為種子結晶接觸熔 液後’投入底部加熱器19電力上升，所導致的被牽引單結 晶碎直徑大幅改變之現象。 而且，當種子結晶1 4接觸熔液5時，可使遮熱板8藉 由升降裝置而上升，更多輻射熱會施加到種子結晶5上， 使溫度差△T更加縮小。 又，最好藉由使添加到種子結晶丨4之雜質濃度，與熔 液5中之雜質濃度之差值在一定準位以下，能避免因為熱 衝擊所致的錯位，同時，也能避免種子結晶14與熔液5接' 觸面處之格子不整合所致的錯位（不配合錯位）。 添加到熔液5側之雜質種類及雜賢濃度係依客戶之半 導體裝置薇商指定之規格來決定。具體說來，雜質硼B係 7054-6737-PF；Ahddub 19 200526821 5el4〜2el9atoms/cc範圍内之既定濃度；雜質燐p係 lel4〜8el8atoms/cc範圍内之既定濃度；雜質別係 2el7〜lel9atoms/cc範圍内之既定濃度；雜質AS係 5el8〜le20atoms/cc範圍内之既定濃度。 於抑制袼子不整合所致之錯位時，最好對應熔液5側 之雜質種類及雜質濃度，預先使用調整過雜質種類及雜質 濃度之種子結晶1 4，以使種子結晶1 4與單結晶矽之接合部 中之格子不整合率為0 01%以下。 而且’本實施例中，雖然使種子結晶1 4接觸熔液前所 施加之磁場強度，與單結晶成長時施加之磁場強度相同， 但疋’也可以使種子結晶1 4接觸溶液前所施加之磁場強 度’比單結晶成長時施加之磁場強度還要大。 又，本實施例1中，預設使用直徑7mm矽單結晶1 4而 做過說明，但是，當使用直徑4mm以上矽種子結晶時，同 樣地在無須實施縮頸處理下，就能培養單結晶矽。在牵引 重量超過200公斤而直徑300mm的單結晶矽時，矽種子結 晶14直徑最好在5mm以上。 (實施例2) 又，也可以以第5圖所示之單結晶牵引裝置j取代第1 圖所示之單結晶牽引裝置1。 於第5圖所示裝置中，省略底部加熱器1 9之配設，主 加熱器9沿著石英坩堝3上下方向，分割成上下2段之加 熱器9a，9b。加熱器9a，9b可調整對於石英掛禍3之加熱 量，亦即輸出可獨立調整。實施形態之裝置中，雖然使加 7054-6737-PF；Ahddub 20 200526821 熱器9分割成2段，也可以分割成3段以上。 以上構成之多重加熱器也與實施例 結晶1 4接觸熔液5^ Θ ^ 田曰裡卞 加磁場到熔液5時，與實施例 1相同地，無須實施縮頸處 一主，，L 向立無錯位，就能不破斷地確 貫牵引大口徑、大重量的矽單結晶。 (實施例3 ) 於上述實施例中，預設單結晶牽引裝χ i具有多重加 熱'而做過說明。可是’當單結晶牵引裝…有單一加 _，亦即於第！圖中’即使於底部加熱器㈣置省略 之僅有主加熱H 9之單—加熱器之構成時，當自種子結晶 一接觸熔液5之前即施加磁場到熔液5時，相同地，無須 二她縮頒處理而且無錯位，就能不破斷地確實牽引大口 控、大重量的矽單結晶。 θ於上述實施例中’雖然針對雜質使用硼B之實施例， 2 ’在添加删Β以外之嫁Ga或銦Ιη等㈣雜質到種子 夺同樣地，此抑制因為熱衝擊所致之錯位導入種子 、、、口日日中，旎使單結晶矽無錯位地培養。 、第6圖係表不使各種元素添加到種子結曰曰曰i 4時，抑制 為…、衝擊所致之錯位導入種子結晶中之濃度範圍。亦 即，當雜質為删Β時，可添加lel8at〇ms/cc以上。其原因 在於牽引後，在以X光評價種子結晶14與接觸熔液後新 形成結晶之界面部分時，當添加lelSatcms/a以上雜質觸 1到種子結曰曰曰14日夺，不會發現錯位導入種子#晶Η。又， 畲雜質為鎵Ga時，可添加5el9at〇ms/cc以上；當雜質為 7054~6737~PF；Ahddub 21 200526821 銦In時，可添加lel6atoms/cc以上；當雜質為燐p時， 可添加lel9at〇mS/cc以上；當雜質為砷時，可添加 5e19at〇ms/CC以上；當雜質為銻Sb時，可添加 lel9at〇mS/CC以上；當雜質為鍺Ge時，可添加 5el9at〇mS/CC以上；當雜質為氮N時，可添加5el3at〇ms/cc 以上；當雜質為碳C時，可添加8el6at〇ms/cc以上。 又，於上述說明中，當添加高濃度雜質到種子結晶14 時，與施加磁場到熔液5相組合，無須實施縮頸處理，能 於無錯位之狀態下，牵引大直徑、大重量之單結晶矽鑄塊， 但是，藉由添加高濃度雜質，能防止因熱衝擊所致的錯位， 所以，可不施加磁場到熔液5而僅添加高濃度雜質到種子 結晶1 4。 、而且’於上述說明中，種子結晶14之尺寸，雖然說明 過舉直徑D為例，求取容許溫度差△ Tc之情形，但是，於 此之外，也可以將種子結晶丨4前端面面積等當作種子結晶 14之尺寸’來求取容許溫度差A。。 【圖式簡單說明】 第1圖係表示本發明實施形態之單結晶牵引裝置之示 意圖。 九 ” 第2圖係表示種子結晶與溶液之溫度差與以解析剪 斷應力間之關係之曲線圖。 第3圖係表示種子結晶直徑與種子結晶中雜質濃度與 容許溫度差間之關係之曲線圖。 22 7054-6737-PF；Ahddub 200526821 第4 ®係、表示為了比較施加與 施實驗之結果圖表。 第5圖係表+沾 圖 衣不與第1圖不同之單結晶牵引裝置之示意 第6圖係表示 衝擊錯位之漠度範圍間二種子結晶的各種元素與未導入熱 η圖係表示：'=:的圖表。 第8圖係表示緩衝頸/與1負荷間之關係之曲線圖。 第9圖係表示接觸熔液：忍圖。 之結晶成長部示意圖。 【主要元件符號說明】 1〜單結晶牽引襞置· 3〜石英坩堝； 2〜CZ爐； 4a〜牵引軸； 4〜牵引機構； 5〜熔液； 4c〜結晶種夾 8〜遮熱板； 7〜氬氣； 9 a、9 b〜加熱器； 9〜主加熱器； 11〜碳坩堝； 1 0〜旋轉軸； 1 4〜種子結晶； 13〜保溫筒； 20〜磁鐵； 1 9〜底部加熱器； 2 2〜結晶成長部。 21〜縮頸部；Tian 5 horses all add q 1Q power to make the seed crystals 14 and _ 5 temperature when contacting the melt. '::: capacity: temperature difference ΔT ·) or less, no necking treatment is required, and the temperature is stable on month b. No dislocation. & FIG. 4 is an experimental result showing the influence of the magnetic field applied to the solution 5 on the temperature difference μ. In this experiment, a seed crystal 14 (diameter of allowed temperature difference η is 100C) of 7 μm diameter Xixi seed crystals with impurities added is used. When the gardenia crystal 14 contacts the solution 5, the input power OW of the bottom heater 19 and the main heating are used. The input power (Kw) of the device 9 implements various 7054-6737-PF; Ahddub 14 200526821 tests (1) ~ (6), combined with the medium field to apply a magnetic field strength of 3,000 (Gauss) magnetic field to the solution 5 with the magnet 20 (Test f 4, ~ r R +, C) (6)), and when no magnetic field is applied to the melt 5 (test (1) ~ (3)), the ancient Zhou 杳 御 / ㉟ check for misalignment 疋 whether to introduce silicon seeds Crystal 1 4. In Figure 4, "for those who have introduced silicon seed crystals 14 and misplaced single crystal silicon systems" δ has an X symbol; for those who have not introduced Shi Xi seed crystal i 4 and no single crystal silicon systems have misalignment, mark 0 symbol. In the experiment, 300Kg polycrystalline silicon was loaded, and single crystal silicon with a diameter of 300 mm was pulled. In the experiment, the electric power input to the bottom heater 19 was fixed at various values (OKW, 10Kw, 35Kw). The electric power input to the main heater 9 was controlled by a closed loop control system to crystallize the seeds in the melt 5.丨 4 The liquid level in contact is the target temperature (for example, 1 340 ° C). As shown in Figure 4, when no magnetic field is applied to the melt 5 (the test, only the input power to the bottom heater 19 is adjusted to 0 ( Kw), adjusting the test (3) when the input power to the main heater 9 is 138 (Kw), and the temperature difference is the allowable temperature difference ΔT (: (1 () (Γ (:) below 95 6rc), In addition, it was confirmed that there was no dislocation, and in addition, in the tests (1) to (2) where the electric power input to the bottom heater 19 was more than (10Kw, 35Kw), the temperature difference (ln., Ι〇3 2 C) exceeded On the other hand, when the temperature difference atc is atc, it is confirmed that there is a dislocation. In contrast, when a magnetic field is applied to the melt 5 (test (0 ~ (6)), it does not matter whether the bottom heater 19 or the main heater 9 Regarding the input power (input power ratio), a temperature difference (92.21, 82.5t :, 78.5 °) below the allowable temperature difference ΔTc (100c> c) can be obtained. In the test, it can be confirmed that there is no dislocation. In particular, the test for the main heater 9 ^ l ^ ~ only the power is higher than OKw (10Kw, 35Kw), the phase is _ 丄 τ $ 目 为Fu Shiru 7054-6737-PF; Ahddub 15 200526821 If the magnetic field is misaligned, it can be confirmed that there is no misalignment when the magnetic field is applied. Also, in Figure 2 and Figure 4, the point of dislocation-free is The point where the 〇 symbol 'is misaligned is marked with the X symbol. As described above, the reason why the misalignment can be easily achieved regardless of the power input to the heater by applying a magnetic field to the melt 5 is explained below. That is, by applying a magnetic field to the melt 5, the convection in the melt 5 is suppressed. Therefore, the heat transfer in the melt 5 is suppressed, and the lateral temperature difference in the jth figure of the melt 5 becomes larger, and the melt 5 The temperature of the part (contact surface) in contact with the seed crystal 14 will be reduced. As a result, in order to maintain the target temperature of the contact surface of the melt 5, the power input to the main heater 9 will turn up. When the power input to the main heater 9 increases When the radiant heat increases, the temperature of seed crystal 14 will rise, The temperature of crystal 14 will be close to the temperature of melt 5 (higher than the temperature of seed crystal 14), and the temperature difference Δτ will be reduced. Therefore, the highest analytical shear stress MRSS (MPa) in seed crystal 14, which is accompanied by contact melting The Z value of the thermal stress of the liquid will become smaller and it will be more difficult to introduce misalignment. In addition, the magnetic field strength applied to the melt 5 is preferably more than 1500 (huss). The reason is that the magnetic field strength is 1000 ~ At 1500 ((^^ 3), the temperature change in the melt 5 will become intense and unstable parts will appear, and there will be a problem that the crystal diameter will fluctuate. When the temperature is below 1000 (Gauss), the convection will be suppressed. The effect is small, so the controllability of the crystal diameter is poor. In this embodiment, a magnetic field is applied before the seed crystal 14 contacts the solution 5. The magnetic point was applied before, which can suppress the melting. The reason is that the seed crystal 14 contacts the melt 5 field to the melt 5. Thus, when starting to pull the single crystal silicon 7054-6737-PF; Ahddub 16 200526821 of the liquid 5 The temperature changes, avoiding the problem that the crystal grain size increases sharply or the crystal diameter becomes smaller. , 4 There is a time delay from the start of application of the magnetic field to the melt 5 until the effect of suppressing convection and suppressing the temperature fluctuation in the melt port is obtained. After applying the magnetic p to the melt 5, about 40 minutes have passed, and the above effect is obtained. Therefore, ^ plus this time delay, before the seed crystal contacts the melt for a predetermined time, = a magnetic field is applied to the melt 5 so that at least when the seed crystal contacts the melt, the magnetic field is transferred to the parallel process in the seed crystal Until the end. (Example 1) After being in contact with the melt, the application was continued, at least to. It is preferable to continue to apply the magnetic field until the shape of the mullion _ In Example i, a silicon seed crystal 14 with a diameter of 7 mm added with 5el8 atoms / cc impurity boron was used (allowable temperature difference ΔTc is 100). The application of a magnetic field to the melt 5 by the magnet 20 started more than 40 minutes before the seed crystal 14 came into contact with the melt 5 and then continued until the silicon single crystal grew 2 ^ (the end of the formation of the monolithic part of the stone evening monolith) and continued. Magnetic field (transverse magnetic field) with a magnetic field strength of 300 ° (Gauss). That is, the intensity of the magnetic field applied before the seed crystal η contacts the melt is the same as the intensity of the magnetic field applied when the single crystal grows. When the seed crystal 14 contacts the refining liquid 5, the electric power input to the bottom heater 19 is fixed at 35 Kw. In addition, the electric power input to the main heater 9 is controlled by a closed-loop control system so that the contact surface between the melt 5 and the seed crystal 14 becomes the target temperature 7054-6737-Pp; Ahddub 17 200526821 and (0 ± 1 340) c). Therefore, the power (Kw) input to the bottom heater 9 and the power (") input to the main heater 9 are respectively the same as the test (4) shown in Figure 4, and become 35 (Kw) and U2 (Kw). The seed crystal when the melt is in contact with melt 1. The difference ΔT in the yield of melt 5 becomes the permissible temperature difference. 匸) The following value (92.2X :) 'can suppress the introduction of misalignment into seed crystal 14. ▲ Seed crystal Η comes into contact with melt 5. After that, there is no need to perform necking treatment, and the single crystal pupa is pulled in this way. After the seed crystal is drenched, the traction of the single crystal chop will continue to control the input of the main heating ... electricity, so that the power (Kw) input to the bottom heating pirate 19 and When contacting the melt, the same temperature is maintained at 35 (Kw). 'The temperature of the melt 5 becomes the target temperature. As a result, it is not necessary to perform necking treatment, and it is possible to cultivate early v and ϋ crystals without misalignment. In the embodiment, since there is no need to carry out a shoulder chanting treatment, after the seed crystal 14 contacts the melt 5, the diameter can be gradually increased while the diameter is gradually expanded, that is, the crystal is pulled, that is, transferred to the flattening process. , ^. y ^ As shown in the figure, after contacting the melt, the leader is attacked by free of charge.卩 22 (for example, about 50mm in length), after confirming that the temperature of the melt is appropriate, it is transferred to Kyrium. The crystal growth part 22 (minimum crystal diameter) is preferably more than 4mm. Especially when When using this embodiment, when the seeds, seeds, and seeds are in contact with the melt 5, the temperature variation in the melt 5 is suppressed, and the contact with the melt can be prevented from being transferred. To the thousand ,, ... = 14 days a day, and 至 m moved to the thousands of steps before the crystal particle size increased sharply and led to the introduction of dislocation. Also, Shiler & Free from the temperature fluctuation of the crystal particle size 'Crystal particle size small cut The diameter of the pulling crystal is below. Figure 7 shows the curve of the relationship between Shi Xi's crystal and the resistance after the day straight and load resistance 7054-6737-PF; Ahddub 18 200526821 Figure. The diameter (transfer diameter) of Shi Xidan and crystal The load resistance can be determined. When using too long, the finest length will not be as small as the seed girl's 14 words " Example, the diameter of the single crystal yields, and the diameter can be maintained, and the seed crystal can be maintained. Therefore, the weight of the silicon single crystal to be pulled is 14 acres. Lu Bwei (only) and when setting the seeds, did not break the large crystals and heavy weight without breaking. When the silicon is used in this embodiment, when S is used in this embodiment, it can be pulled out as early as possible when the power to the bottom heater 19 is unchanged after the contact with the solution on the next day. No misalignment of the crystal stone Xi'an, the adjustment of the heater becomes simple, and the burden on the operator will be reduced. ', 千千 工 入, when using this embodiment, when the seed crystal contacts the melt and after, under the condition that the power of the bottom heater 19 is maintained above the level (35Kw), it can be pulled out as early as possible. The non-dislocation of the crystal stone xi ... can avoid the phenomenon that the diameter of the single crystal being pulled is greatly changed because the power of the bottom heater 19 is increased after the seed crystal contacts the melt. In addition, when the seed crystal 14 contacts the melt 5, the heat shielding plate 8 can be raised by a lifting device, and more radiant heat is applied to the seed crystal 5 to further reduce the temperature difference ΔT. In addition, it is better to prevent the misalignment caused by thermal shock by avoiding the dislocation caused by thermal shock by making the difference between the impurity concentration added to the seed crystal 4 and the impurity concentration in the melt 5 below a certain level. Dislocation caused by the misalignment of the lattice at the interface between the crystal 14 and the melt 5 (not cooperating with the dislocation). The type of impurities and the concentration of impurities added to the 5 side of the melt are determined according to the specifications specified by the customer's semiconductor device. Specifically, the impurity boron B is 7054-6737-PF; Ahddub 19 200526821 5el4 ~ 2el9atoms / cc in a predetermined concentration; the impurity 燐 p is a predetermined concentration in the range of lel4 ~ 8el8atoms / cc; the impurity is 2el7 ~ lel9atoms / A predetermined concentration in the range of cc; the impurity AS is a predetermined concentration in the range of 5el8 ~ le20atoms / cc. When suppressing misalignment caused by misalignment of gardenia, it is best to correspond to the impurity type and impurity concentration on the 5th side of the melt, and use seed crystals 14 adjusted for the impurity type and impurity concentration in advance to make seed crystals 14 and single crystals The lattice mismatch rate in the junction of silicon is 0.01% or less. Moreover, in this embodiment, although the magnetic field intensity applied before the seed crystal 14 is brought into contact with the melt is the same as the magnetic field intensity applied when the single crystal is grown, 疋 'may also be applied before the seed crystal 14 is brought into contact with the solution. The magnetic field strength is greater than the magnetic field strength applied when a single crystal grows. In the first embodiment, the silicon single crystal 14 with a diameter of 7 mm is preset and explained. However, when a silicon seed crystal with a diameter of 4 mm or more is used, the single crystal can be cultured without performing necking treatment. Silicon. When pulling single crystal silicon with a weight exceeding 200 kg and a diameter of 300 mm, the diameter of the silicon seed crystal 14 is preferably 5 mm or more. (Embodiment 2) The single crystal pulling device j shown in FIG. 5 may be replaced by the single crystal pulling device j shown in FIG. 5. In the device shown in Fig. 5, the arrangement of the bottom heater 19 is omitted, and the main heater 9 is divided into two upper and lower heaters 9a, 9b along the vertical direction of the quartz crucible 3. The heaters 9a, 9b can adjust the heating amount for the quartz hanging accident 3, that is, the output can be independently adjusted. In the device of the embodiment, although the 7054-6737-PF; Ahddub 20 200526821 heater 9 is divided into two sections, it may be divided into three or more sections. The multiple heater with the above configuration is also in contact with the crystal 14 of the embodiment 5 in the melt 5 ^ Θ ^ When the magnetic field is applied to the melt 5 in the same manner as in the embodiment 1, there is no need to implement a main necking. It can pull large-caliber and heavy-weight silicon single crystal without breaking. (Embodiment 3) In the above embodiment, the single-crystal traction device χ i is preset to have multiple heatings' and described. But ‘when the single crystal pulls out… there is a single plus _, that is, the first! In the figure, even when the bottom heater is installed and only the main heating H 9 is omitted—the structure of the heater, when the magnetic field is applied to the melt 5 before the seed crystal contacts the melt 5, the same need not be the same. Secondly, she shrinks the treatment and has no dislocation, and can surely pull the large-mouth control and heavy silicon single crystal without breaking. θ In the above-mentioned embodiment, 'Although the embodiment using boron B for impurities, 2' Adding other impurities such as Ga or indium I to the seeds to remove the B, similarly, this suppresses the introduction of seeds due to dislocation due to thermal shock. Every day, every day, every single day, the monocrystalline silicon is cultivated without dislocation. Fig. 6 shows the concentration range in which when various elements are added to the seed knot, i 4 is suppressed, the dislocation caused by the impact is introduced into the seed crystal. That is, when the impurity is deleted B, it can be added at l8at0ms / cc or more. The reason is that after traction, when X-ray is used to evaluate the interface part of the seed crystal 14 and the newly formed crystal after contact with the molten metal, when the impurities above lelSatcms / a are added to the seed junction on the 14th, no misalignment will be found. Import seed # 晶 Η. In addition, when the gadolinium impurity is gallium Ga, 5el9at0ms / cc or more can be added; when the impurity is 7054 ~ 6737 ~ PF; Ahddub 21 200526821 indium In, it can be added more than lel6atoms / cc; when the impurity is 燐 p, it can be added lel9at〇mS / cc or more; when the impurity is arsenic, 5e19at〇ms / CC or more can be added; when the impurity is antimony Sb, lel9at〇mS / CC or more can be added; when the impurity is germanium Ge, 5el9at〇mS can be added / CC or more; when the impurity is nitrogen N, 5el3at0ms / cc or more can be added; when the impurity is carbon C, 8el6at0ms / cc or more can be added. In addition, in the above description, when a high concentration of impurities is added to the seed crystal 14, in combination with the application of a magnetic field to the melt 5, it is not necessary to perform a necking treatment, and can pull a large-diameter, large-weight unit without dislocation. The crystalline silicon ingot, however, can prevent dislocation due to thermal shock by adding high-concentration impurities. Therefore, it is possible to add only high-concentration impurities to the seed crystal 14 without applying a magnetic field to the melt 5. Moreover, in the above description, although the size of the seed crystal 14 is described as an example in which the diameter D is taken as an example to determine the allowable temperature difference Δ Tc, in addition, the seed crystal 4 Let the size 'of the seed crystal 14' be used to determine the allowable temperature difference A. . [Brief description of the drawings] Fig. 1 is a schematic diagram showing a single crystal traction device according to an embodiment of the present invention. Nine "The second graph is a graph showing the relationship between the temperature difference between the seed crystal and the solution and the shear stress for analysis. The third graph is the graph showing the relationship between the seed crystal diameter and the impurity concentration in the seed crystal and the allowable temperature difference Fig. 22 7054-6737-PF; Ahddub 200526821 Series 4 ® is a chart showing the results of comparison of application and application experiments. Figure 5 is a table + schematic drawing of a single crystal traction device that does not differ from Figure 1 Fig. 6 is a graph showing various elements of the two seed crystals in the desert range of impact dislocation and the heat η is not introduced. Fig. 8 is a graph showing '=:'. Fig. 8 is a graph showing the relationship between the buffer neck and 1 load. Figure 9 shows the contacting molten metal: tolerance map. The crystal growth part diagram. [Description of the main component symbols] 1 ~ single crystal traction set · 3 ~ quartz crucible; 2 ~ CZ furnace; 4a ~ traction shaft; 4 ~ traction Mechanism; 5 ~ melt; 4c ~ crystal seed clip 8 ~ heat shield; 7 ~ argon; 9a, 9b ~ heater; 9 ~ main heater; 11 ~ carbon crucible; 1 ~ rotation axis; 1 4 ~ seed crystal; 13 ~ holding cylinder; 20 ~ magnet 1 9~ bottom heater;. 2 ~ 2 21~ crystal growth portion constricted portion;
7054-6737-PF;Ahddub 237054-6737-PF; Ahddub 23