TWI260069B - Memory module and method for manufacturing the same - Google Patents

Memory module and method for manufacturing the same Download PDF

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Publication number
TWI260069B
TWI260069B TW093125406A TW93125406A TWI260069B TW I260069 B TWI260069 B TW I260069B TW 093125406 A TW093125406 A TW 093125406A TW 93125406 A TW93125406 A TW 93125406A TW I260069 B TWI260069 B TW I260069B
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TW
Taiwan
Prior art keywords
memory
external
module
memory module
fingers
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TW093125406A
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Chinese (zh)
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TW200608526A (en
Inventor
Yi-Chang Lee
John Liu
Yeong-Ching Chao
Yau-Rung Li
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Chipmos Technologies Inc
Chipmos Technologies Bermuda
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Application filed by Chipmos Technologies Inc, Chipmos Technologies Bermuda filed Critical Chipmos Technologies Inc
Priority to TW093125406A priority Critical patent/TWI260069B/en
Publication of TW200608526A publication Critical patent/TW200608526A/en
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Publication of TWI260069B publication Critical patent/TWI260069B/en

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/4824Connecting between the body and an opposite side of the item with respect to the body

Abstract

A memory module mainly includes a plurality of memory packages, a module sealant and a plurality of outer connecting pads. The memory packages are stacked one above the other. Each memory package includes a memory chip and a chip carrier having a plurality of outer fingers. The outer fingers are formed on a same side of the corresponding chip carriers. The module sealant seals the memory packages and has a mounting surface which exposes the side surfaces of the outer fingers. The outer connecting pads are formed on the mounting surface of the module sealant for connecting the side surfaces of the outer fingers. The outer connecting pads connect the memory packages to a modulus substrate. Thus the memory module has a smaller outline.

Description

1260069 五、發明說明(1) 【發明所屬之技術領域】 本發明係有關於一種記憶體模組,特別係有關於一種 將複數個記憶體封裝件密封於一模組封膠體之微小化記情 體模組及其製造方法。 〜 【先前技術】 提高記憶體容量一直是改良記憶體模組所追求之目 標,一模組基板上設有愈多之記憶體晶片,愈能增加記情 體模組之記憶體容量,習知記憶體晶片之定址方式,係^ 複數個記憶體晶片設於該模組基板,該些記憶體晶片係以 行、列二維矩陣之方式設於該模組基板之表面,因此該記 憶體模組係具有一較大之面積。為達到記憶體容量增加之 目的,記憶體之定址方式係發展到三維矩陣排列,除原有 之平面排列方式外,係以堆疊該些記憶體晶片之方式增加 該些記憶體晶片之數量,以同時達到該模組基板之空^利 用率,一種習知高容量之記憶體半導體封裝構造,例如美 國專利公告第6, 686, 656號「整合式多晶片之晶片尺寸封' 裝構造」係揭示有一種垂直堆疊複數個晶片尺寸封裝件 (Chip Scale Package,CSP)之封裝構造,請參閱第1圖, 該組合式晶片尺寸封裝構造i 00係包含複數個晶片尺寸封 裝件11 0、複數個側邊銲線14〇及一封裝膠體15〇,每一曰 ^ 曰曰 片尺寸封裝件110係包含有一基板120、一晶片130及複數 個内連接銲線111,該基板12〇係具有一開口121及包含有 複數個線路122,該些線路122係形成於該基板120之一表 面123,並延伸至該基板12〇之兩對應側邊124,該基板12〇1260069 V. INSTRUCTION DESCRIPTION OF THE INVENTION (1) Technical Field of the Invention The present invention relates to a memory module, and more particularly to a miniaturized case for sealing a plurality of memory packages to a module sealant. Body module and its manufacturing method. ~ [Prior Art] Increasing the memory capacity has always been the goal pursued by the improved memory module. The more memory chips are placed on a module substrate, the more the memory capacity of the sensible body module can be increased. The memory chip is arranged in a plurality of memory chips disposed on the module substrate, and the memory chips are disposed on the surface of the module substrate in a row and column two-dimensional matrix, so the memory module The group has a larger area. In order to achieve the purpose of increasing the memory capacity, the addressing mode of the memory is developed into a three-dimensional matrix arrangement. In addition to the original planar arrangement, the number of the memory chips is increased by stacking the memory chips. At the same time, the memory utilization of the module substrate is achieved, and a conventional high-capacity memory semiconductor package structure is disclosed, for example, in US Patent Publication No. 6,686,656, "Integrated Multi-Wafer Wafer Size Sealing Structure" There is a package structure in which a plurality of chip scale packages (CSPs) are vertically stacked. Referring to FIG. 1, the combined wafer size package structure i 00 includes a plurality of wafer size packages 110 and a plurality of sides. The edge bonding wire 14A and the encapsulant 15 〇 each of the 尺寸 chip size packages 110 includes a substrate 120, a wafer 130 and a plurality of inner bonding wires 111, the substrate 12 having an opening 121 And comprising a plurality of lines 122 formed on a surface 123 of the substrate 120 and extending to two corresponding sides 124 of the substrate 12, the substrate 12

1260069 五、發明說明(2) 之面積係稍許大於該晶片130,該晶片130係包含有一主動 面131並具有複數個銲墊132,該些銲墊132係排列於該主 動面131之一中央位置,該晶片i 30之該主動面131係以一 黏晶膠112黏結於該基板120,且該些銲墊132係顯露於該 開口 12 1,該些内連接銲線1 11係連接該些銲墊丨32與該基 板120之該些線路122,一封膠體113係密封該些内連接^ 線11\’該些晶片尺寸封裝件110係以一黏膠114黏結而相 互堆疊,該些側邊銲線1 40係連接上下兩相鄰之晶片尺寸 封裝件11 0之對應該些線路丨22,該封裝膠體丨5〇係密封該 些晶片尺寸封裝件11 〇與該些側邊銲線丨4 〇,複數個銲球 160係設於堆疊於最下層之基板12〇,由於該組合式晶片尺 寸封裝構造100係以該些側邊銲線14〇連接兩相鄰之基板 1=〇之對應該些線路122,當其中之一侧邊銲線14〇受到損 壞,係會影響堆疊於上方之該些晶片尺寸封裝件丨1〇之電 性連接,為使該些侧邊銲線140能連接該歧板 =之該 =路122,該些基議之以必=0不之相該表 ,片之尺寸係必需逐漸增大,因此當該些 曰曰片尺寸封裝件110之堆疊數量愈多,最下 面積係必需愈大,因此該組合式晶片尺寸 土二20之 面積尺寸係會愈大,該些線路i 2 2與該此 t 致過县之雷W禮、路物】邊銲線1 4 0將導 欽^長之電欧傳遞路徑而不適合使古 【發明内容】 '阿頻之電子產品。 本發明之主要目的係在於提供一種 包含有複數個記憶體封裝件、一模 二_ =組係 巧勝體及由一金屬層1260069 V. The invention (2) is slightly larger than the wafer 130. The wafer 130 includes an active surface 131 and has a plurality of pads 132 arranged in a central position of the active surface 131. The active surface 131 of the wafer i 30 is bonded to the substrate 120 by a die bond 112, and the pads 132 are exposed to the opening 12 1 . The inner bonding wires 11 11 are connected to the pads. The pads 32 and the lines 122 of the substrate 120, a gel 113 seals the inner connecting wires 11'. The chip-sized packages 110 are bonded to each other by a glue 114, and the sides are stacked The bonding wire 1 40 is connected to the upper and lower adjacent wafer-sized packages 110, and the encapsulating layer 〇5 密封 seals the chip-sized packages 11 and the side bonding wires 4 〇, a plurality of solder balls 160 are disposed on the substrate 12 stacked on the lowermost layer, and the combined wafer size package structure 100 is connected to the two adjacent substrates by the side bonding wires 14 1 These lines 122, when one of the side wire bonds 14 is damaged, will affect the pile The electrical connection of the chip-sized packages 叠1〇 stacked on the upper side, so that the side soldering wires 140 can be connected to the slab=the road 122, the basics must be =0. According to the table, the size of the sheet must be gradually increased. Therefore, the larger the number of stacks of the chip-size packages 110, the larger the minimum area must be. Therefore, the area size of the combined wafer size is 20 The larger the system, the more i 2 2 and the t-to-county mines, the roads, the welding line, and the welding line, which is not suitable for the ancient [invention] 'Abandon's electronic products. The main object of the present invention is to provide a memory package including a plurality of memory packages, a module, a system, and a metal layer.

第8頁 1260069 五、發明說明(3) 形成之複數個 列 板,每 每一記憶 應之該些晶片 記憶體封裝件 面,由於每一 此該記憶體模 堆疊之方式, 長條狀之記憶 輕薄型之可攜 本發明之 吕己憶體封裝件 外接指係形成 板之同一側邊 接合面,並連 外接指垂直, 性連接,不需 裝件後,再以 因此該記憶體 之電子產品, 而造成劣品。 本發明之 方法,其係相 體封裝件係包 外接墊,該 體封裝件係 曰曰片載板係包含 些記憶體封裝件係相互 包含有一記憶體晶片及 有複數個外接指,其係 側邊,該模組封膠體係 接合面,以顯露該些外 件係被包覆在該模組封 係較佳;該些記憶體封 體模組之微小外觀,而 此該記憶體模組係更適 載板之同一 ,並具有一 記憶體封裝 組之抗濕性 達到該記憶 體模組,因 式電子產品。 次一目的係在於提供一種記憶體模 之一晶片載板係包含有複數個外接 於該些晶片載板之表面,並位於該 ’複數個外接墊係形成於一模組封 接該些外接指之侧面,該些外接塾 該些§己憶體封裝件係藉由該些外接 利用複數個電性連接元件連些該些 其中之一記憶體封裝件之線路作外 模組之線路傳輸路徑係較短,可使 又可避免因該些電性連接元件之連 再一目的係在於提供一種記憶體模 互堆疊排列複數個記憶體封裝件, 含有一晶片載板,每一晶片載板係 堆疊排 一晶片載 形成於對 密封該些 接指之側 膠體,因 裝件係以 取代習知 合使用於 組,每一 指,該些 些晶片載 膠體之一 係與該些 墊對外電 記憶體封 部連接, 用於高頻 結不良, 組之製造 每一記憶 包含有複Page 8 1260069 V. Invention Description (3) Forming a plurality of column plates, each of which should be the face of the chip memory package, due to the manner in which the memory modules are stacked, the strip-shaped memory is thin The portable external finger of the invention has the same side joint surface of the board, and the external finger is connected vertically, and the connection is not required, and then the electronic product of the memory is used. And cause inferior goods. In the method of the present invention, the phase package package is an external pad, and the body package is a memory package comprising a memory chip and a plurality of external fingers, the side of which is The module sealing system joint surface is formed to reveal that the outer parts are coated in the module sealing system; the memory sealing module has a slight appearance, and the memory module is It is more suitable for the same carrier board and has the moisture resistance of a memory package group to reach the memory module, the electronic product. The second object is to provide a memory phantom in which a wafer carrier includes a plurality of surfaces externally connected to the wafer carriers, and the plurality of external pads are formed in a module to seal the external fingers. On the side, the external 塾 体 体 封装 封装 塾 § § § § § § § § § § § § § § § § § § § § § § § § § § § § § § § § § § § § § § § § § § § Shortly, it can be avoided that the connection of the electrical connecting elements is further provided by providing a memory module stacked with a plurality of memory packages, including a wafer carrier, each wafer carrier stacking A wafer carrier is formed on the side colloid for sealing the fingers, and the device is used in the group instead of the conventional one. Each finger, one of the wafer carrier and the pad is externally charged. Connection, for high-frequency junction failure, the manufacture of the group contains each complex

第9頁 1260069 五、發明說明(4) ί個:卜=,3 =於對應之該些晶片載板之同-側 -記憶體封裝件= 开進連接之製程,因此每 板,或彎折每一曰H4 :成複數個銲球於每一晶片載 連接,該記情於^ έ板之複數個導腳,以進行内部電性 數個外接墊連接 二己=封裝件係可直接利用複 接。 一 r接扣之側面,以進行對外之電性連 依本發明 裝件、一模組 墊,該些記憶 件係包含有一 包含有複數個 邊,該模組封 合面,以顯露 組封膠體之該 【實施方式】 之記憶體模組,其 封膠體以及由一金 體封裝件係相互堆 5己憶體晶片及一晶 外接指,其係形成 膠體係密封該些記 該些外接指之側面 接合面,並連接該 係包含有複數個記憶體封 屬層形成之複數個外接 疊排列,每一記憶體封裝 片載板’母一晶片載板係 於對應晶片載板之同一側 憶體封裝件,並具有一接 ’該些外接墊係形成該模 些外接指之側面。 參閱所附圖式,本發明將列舉以下之實施例說明。 依本發明之一具體實施例,請參閱第2及3圖,一種記 憶體模組2 0 0係主要包含複數個記憶體封裝件2丨〇、一模組 封膠體2 20及由一金屬層231形成之複數個外接塾230,該 些記憶體封裝件21 0係相互堆疊排列,每一記憶體封裝件 21 0係包含有一記憶體晶片2 11及一晶片載板2 i 2,該些記 憶體晶片211係設於對應之該些晶片載板2 1 2,每一晶片載Page 9 1260069 V. Invention Description (4) 个: Bu =, 3 = in the same-side-memory package of the corresponding wafer carrier = open connection process, so each board, or bend Each 曰H4: a plurality of solder balls are connected to each wafer, and the plurality of lead pins are recorded on the έ board for internal electrical connection of a plurality of external pads. Pick up. a side of the r-clip for external electrical connection according to the present invention, a module pad, the memory device includes a plurality of sides, the module sealing surface to reveal the sealing body The memory module of the embodiment has a seal body and a gold body package stacked on each other with a memory chip and a crystal external finger, which are formed by a glue system to seal the external fingers. The side joint surface is connected to the plurality of outer stacks formed by the plurality of memory seal layers, and each of the memory package sheet carrier 'mother wafer carrier board is attached to the same side of the corresponding wafer carrier The package has a connection to form the sides of the external fingers. The invention will now be described by way of example with reference to the accompanying drawings. According to a specific embodiment of the present invention, referring to FIGS. 2 and 3, a memory module 2000 includes a plurality of memory packages 2, a module encapsulant 2 20, and a metal layer. 231, a plurality of external rafts 230 are formed, and the memory packages 20 0 are stacked on each other. Each of the memory packages 20 0 includes a memory chip 2 11 and a wafer carrier 2 i 2 . The body wafer 211 is disposed on the corresponding wafer carrier 2 1 2, each wafer carrying

第10頁 1260069 五、發明說明(5)Page 10 1260069 V. Description of invention (5)

板2 1 2係包含有複數個線路,該些記憶體晶片2 1 1係可以打 線接合或覆晶接合之方式連接對應之該些晶片載板2 1 2之 該些線路’在本實施例中,該些記憶體晶片211係以覆晶 接合之方式連接對應之該些晶片載板21 2之該些線路,每 一線路係連接有一外接指2 1 3,該些外接指2 1 3係形成於對 應之该些晶片載板2 1 2之同一側邊,一封膠體2 1 5係密封該 些記憶體晶片2 1 1及該些線路,並顯露該些外接指2丨3,較 佳地,該些記憶體封裝件21 〇係具有略為相同之尺寸外 觀,在本實施例中,該些記憶體封裝件2丨〇係以同方向擺 設,而以一黏膠黏結該些封膠體2丨5及相鄰之晶片載體 21 2 ’因此,該些晶片載體2 1 2之該些外接指21 3係朝向相 同之方向,該些晶片載板212係可為可撓性基板(^16^1316 substrate)或印刷電路板,在本實施例中,該些晶片載板 2 1 2係為可撓性基板,較佳地,複數個強化板21 6 (s t i f f ener )係黏結於對應之該些晶片載板21 2。The board 2 1 2 includes a plurality of lines, and the memory chips 21 1 can be connected by wire bonding or flip chip bonding to the corresponding lines of the chip carriers 2 1 2 in this embodiment. The memory chips 211 are connected to the corresponding pads of the wafer carriers 21 2 by flip chip bonding, and each circuit is connected with an external finger 2 1 3 , and the external fingers 2 1 3 are formed. On the same side of the corresponding wafer carrier 2 1 2, a colloid 2 15 seals the memory chips 2 1 1 and the lines, and exposes the external fingers 2丨3, preferably The memory packages 21 have a slightly identical appearance. In this embodiment, the memory packages 2 are arranged in the same direction, and the adhesives are bonded by a glue. 5 and the adjacent wafer carrier 21 2 ' Therefore, the external fingers 21 3 of the wafer carrier 2 1 2 are oriented in the same direction, and the wafer carrier 212 can be a flexible substrate (^16^1316) Substrate) or a printed circuit board. In this embodiment, the wafer carrier boards 2 1 2 are flexible substrates, Preferably, a plurality of reinforcing plates 21 6 (s t i f f ener ) are bonded to the corresponding wafer carriers 21 2 .

该模組封膠體2 2 0係密封該些記憶體封裝件21 〇,並具 有一接合面2 2 1 ’以顯露該些外接指2 1 3之侧面2 1 4,該金 屬層231係形成於該模組封膠體2 2〇之表面,請參閱第2及3 圖,该金屬層231係包含有該些外接塾“ο,該些外接塾 2 3 0係形成該模組封膠體2 2 〇之該接合面2 21,該些外接塾 230係與該些晶片載板21 2之該些外接指213為垂直向連 f ’即该些外接塾2 3 0係連接該些外接指2丨3之侧面214, 每一外接墊2 3 0係可連接其中至少一外接指2丨3,而使得該 些外接墊230之數量係小於該些外接指2丨3之數量。較佳The module encapsulant 2 20 seals the memory packages 21 〇 and has a bonding surface 2 2 1 ′ to expose the side surfaces 2 1 4 of the external fingers 2 1 3 , and the metal layer 231 is formed on For the surface of the module encapsulant 2 2 , please refer to FIGS. 2 and 3 , the metal layer 231 includes the external 塾 ο , the external 塾 2 3 0 forms the module encapsulant 2 2 〇 The external interface 230 is perpendicular to the external fingers 213 of the wafer carrier 21 2, that is, the external connectors are connected to the external fingers 2丨3. The side surface 214, each of the external pads 203 can be connected to at least one of the external fingers 2丨3, such that the number of the external pads 230 is smaller than the number of the external fingers 2丨3.

第11頁 1260069 五、發明說明(6) 地,該些外接墊230之面積係大於對應之外接指213之側面 面積八中,4分外接墊2 3 0係以一垂直於該些晶片載 板2 1 2之方向連接母一 §己憶體封裝件2 1 q之相同訊之 指 2 1 3。 模組基板2 4 G係具有複數個連接塾2 41,該模組封膠 體2 20之該接合面221係以一電耦合介質242連接該模組基 板240,以導通該些外接墊23〇與該模組基板24〇之該些連 接墊24 1,該電耦合介質係可為一異方性導電膠 (Anisotropic Conductive FUm,ACF)、一銲料或複數個 凸塊。在本實施例中,複數個銲球250係可設於該模組基 板240之另一表面;或者,可在該模組基板24〇之一側邊嗖 有複數個金手指,以供插接至一主機板、通訊板或其它系 2連接板。此外,本發明之記憶體模組2〇〇可另包含有適 畐之被動元件(passive component)與控制器 (controller),其中該些被動元件係可設於每一記憶體封 ,件21 0内或是在該模組基板24〇上,而該控制器則可設於 該模組基板240或其它外部電子裝置中(圖未繪出)。 依本發明之記憶體模組200之製造方法係詳細說明於 後,請參閱第4A圖,首先係相互堆疊排列該些記憶體封裝 件210,該些記憶體封裝件21〇之該些外接指213係形成於〜 對應之该些晶片載板21 2之同一侧邊,且該些外接指2丨3係 朝向同一方向;請再參閱第“圖,形成該模組封膠體 ” 220,以密封該些記憶體封裝件21〇 ;請再參閱第扎圖, 割該模組封膠體22 0靠近外接指213之一側,以使該模组Page 11 1260069 V. Inventive Note (6) Ground, the area of the external pads 230 is greater than the area of the side of the corresponding external fingers 213, and the 4 points of the external pads 2 3 0 are perpendicular to the wafer carriers. 2 1 2 direction connection mother one § memory box 2 1 q the same message finger 2 1 3 The module substrate 2 4 G has a plurality of connections 塾 2 41 , and the interface 221 of the module encapsulant 2 20 is connected to the module substrate 240 by an electrical coupling medium 242 to turn on the external pads 23 . The module substrate 24 includes the connection pads 24 1, and the electrical coupling medium can be an anisotropic conductive adhesive (ACF), a solder or a plurality of bumps. In this embodiment, a plurality of solder balls 250 may be disposed on the other surface of the module substrate 240. Alternatively, a plurality of gold fingers may be disposed on one side of the module substrate 24 for insertion. To a motherboard, communication board or other 2 connection boards. In addition, the memory module 2 of the present invention may further comprise a suitable passive component and a controller, wherein the passive components may be disposed in each memory package, and the component 21 0 The controller can be disposed on the module substrate 240 or other external electronic device (not shown). The method for manufacturing the memory module 200 according to the present invention is described in detail below. Referring to FIG. 4A, the memory packages 210 are stacked on top of each other. The memory packages 21 are externally connected. 213 is formed on the same side of the corresponding wafer carrier 21 2, and the external fingers 2丨3 are oriented in the same direction; please refer to the “FIG., Form the Module Sealant” 220 to seal The memory package 21〇; please refer to the figure, cut the module encapsulant 22 0 near one side of the external finger 213, so that the module

第12頁 1260069 五、發明說明(7)Page 12 1260069 V. Description of invention (7)

膠體220具有該接合面221而顯露該些外接指213之側面 214 ;請再參閱第4D圖,以電鍍方式形成該金屬層231於該 模組封膠體220之表面,該金屬層231並覆蓋該些外接指 213之側面214 ;請再參閱第4E圖,以雷射切割^金屬層 2 3 1之方式形成該些外接墊2 3 0於該模組封膠體2 2 〇之該接 合面2 2 1,该些外接塾2 3 0係垂直向連接該些外接指2丨3之 側面2 1 4 ;請再參閱第2圖,在本實施例中,係以一異方性 導電膠(Anisotropic Conductive Film,ACF)電耦合連接 該模組封膠體220之該接合面221與該模組基板24〇,以導 通該些外接墊230,完成該記憶體模組2〇〇。The colloid 220 has the joint surface 221 and the side surface 214 of the outer finger 213 is exposed; please refer to FIG. 4D to form the metal layer 231 on the surface of the module seal body 220 by electroplating, and cover the metal layer 231. The side surface 214 of the external finger 213; please refer to FIG. 4E again to form the outer pad 2 3 0 in the manner of laser cutting the metal layer 2 3 1 to the bonding surface 2 2 of the module sealing body 2 2 1. The external 塾2 3 0 is perpendicularly connected to the side 2 1 4 of the external fingers 2 丨 3; please refer to FIG. 2 again. In this embodiment, an anisotropic conductive adhesive is used. The film, ACF is electrically coupled to the bonding surface 221 of the module encapsulant 220 and the module substrate 24 to turn on the external pads 230 to complete the memory module 2 .

^在上述之該記憶體模組2〇〇中,該些記憶體封裝件210 係以堆疊之方式達到該記憶體模組2〇〇之微小化以取代 長條狀之記憶體模組外型,因此該記憶體模組2〇〇係 更適合使用於輕薄型之可攜式電子產品,又該些外接 230係與每一晶片載板212之該些外接指213垂直向連接, 該些記憶體封裝件2丨〇係可藉由該些外接墊對外 性=,於製程上可省略以複數個電性連接元件做内部電 傳ίΪ,步驟’以使得該記憶體模組_具有較短之電性 H路,=’且該記憶體模組謂係不顯露該些記憶體封裝 因此具有較佳之抗濕性。 附之申請專利範圍所界定者 在不脫離本發明之精神和範 均屬於本發明之保護範圍。 、本發明之保護範圍當視後 為準’任何熟知此項技藝者, 圍内所作之任何變化與修改,In the above memory module 2, the memory packages 210 are stacked to achieve the miniaturization of the memory module 2 instead of the long memory module. Therefore, the memory module 2 is more suitable for use in a thin and portable portable electronic product, and the external 230 series are vertically connected to the external fingers 213 of each of the wafer carriers 212. The body package 2 can be externally made by the external pads. In the process, a plurality of electrical connection elements can be omitted for internal transmission, so that the memory module has a shorter Electrical H-channel, = 'and the memory module means that the memory packages are not exposed and therefore have better moisture resistance. The scope of the invention is defined by the scope of the invention, without departing from the spirit and scope of the invention. The scope of protection of the present invention is subject to the circumstance, and any changes and modifications made by the person skilled in the art,

第13頁 1260069 圖式簡單說明 【圖式簡單說明】Page 13 1260069 Simple illustration of the diagram [Simple description of the diagram]

/1 第 1 圖 面示意圖; 第 2 圖:依本發明之一癯記憶體模組之截 一 風面示音 第3 圖:依本發明之該纪憶體模組之一接合面%、 示意圖;及 第4Α至4Ε圖:依本發明之該記憶體模組之製造方法,、— 個記憶體封裝件在製造過程中之截面示意圖。 複數 習知整合式多晶 曰曰尺寸封裝構造之 截 圖; 之正面/1 Fig. 1 is a schematic view; Fig. 2 is a cross-sectional view of a memory module according to one embodiment of the present invention. FIG. 3 is a schematic view showing a joint surface of one of the memory modules according to the present invention. And 4th to 4th drawings: a method of manufacturing the memory module according to the present invention, a cross-sectional view of a memory package in a manufacturing process. a cross-section of a conventional integrated polycrystalline germanium-sized package structure;

元件符號簡單說明: 1 0 0組合式晶片尺寸封裝構造 110 晶片尺寸封震件 111 内連接銲線 112 113 封膠體 114 120 基板 121 123 表面 124 130 晶片 131 140 側邊銲線 150 200 記憶體模組 210 記憶體封裝件 211 記憶體晶片 212 213 外接指 214 216 強化板 220 模組封膠體 221 黏晶膠 黏膠 開口 1 2 2線路 側邊 主動面 132銲墊 封裝膠體 160銲球 晶片載板 側面 21 5封膠體 接合面Brief description of component symbols: 1 0 0 combined wafer size package structure 110 wafer size sealer 111 internal connection wire 112 113 sealant 114 120 substrate 121 123 surface 124 130 wafer 131 140 side wire 150 200 memory module 210 Memory Package 211 Memory Chip 212 213 External Finger 214 216 Reinforced Plate 220 Module Sealant 221 Adhesive Adhesive Opening 1 2 2 Line Side Active Surface 132 Pad Packing Glue 160 Solder Ball Wafer Carrier Side 21 5 sealant joints

12600691260069

圖式簡單說明 230 外接墊 231 金屬層 240 模組基板 241 連接墊 242 電耦合介質 250 鲜球Brief description of the diagram 230 external pads 231 metal layer 240 module substrate 241 connection pad 242 electrically coupled medium 250 fresh ball

1HH 第15頁1HH第15页

Claims (1)

1260069 六、申請專利範圍 【申請專利範圍】 1、一種記憶體模組,包含: 複數個ά己憶體封裝件,其係相互堆疊排列,每一記憶 體封裝件係包含有一記憶體晶片及一晶片載板,每一晶片 載板係包含有複數個外接指,其係形成於對應晶片載板之 同一側邊; 一极組封膠體’其係密封該些記憶體封裝件,並具有 一接合面’以顯露該些外接指之側面;及 由一金屬層形成之複數個外接墊,其係形成於該模組 封膠體之該接合面,並連接該些外接指之側面。 2如申明專利範圍第1項所述之記憶體模組,其中該些 外接墊係與該些晶片載板之該些外接指為垂直向連接。 3、 如申請專利範圍第丨項所述之記憶體模組,其中該些 外接墊之數量係小於該些晶片載板之該些外接指之數量 4、 如申請專利範圍第丨項所述之記憶體模組,豆此 =塾之面積係大於該些晶片載板之該些外接指之側面二面 5、 +如申請專利範圍第丨項所述之記憶體模組,豆人 一杈組基板,其係具有複數個連接墊,且該n 組基板之該些連接墊。 一外接墊與该模 6、 如申請專利範圍第5項所述之記憶體模組,直 複數個銲球,其係設於該模組基板。 、、八另包含 7、 如申請專利範圍第丨項所述之記憶體模組,其中該此1260069 VI. Scope of Application Patent [Scope of Application] 1. A memory module comprising: a plurality of ά 忆 体 package, which are stacked on each other, each memory package comprising a memory chip and a a wafer carrier, each wafer carrier comprising a plurality of external fingers formed on the same side of the corresponding wafer carrier; a pole assembly encapsulant sealing the memory packages and having an engagement The surface is formed to expose the sides of the external fingers; and a plurality of external pads formed by a metal layer are formed on the joint surface of the module seal body and connected to the sides of the external fingers. 2. The memory module of claim 1, wherein the external pads are vertically connected to the external fingers of the wafer carriers. 3. The memory module of claim 2, wherein the number of the external pads is less than the number of the external fingers of the wafer carrier 4, as described in the scope of the patent application. The memory module, the area of the bean is larger than the side surface of the external fingers of the wafer carrier 5, + the memory module as described in the scope of the patent application, the group of beans The substrate has a plurality of connection pads, and the connection pads of the n groups of substrates. An external mat and the mold 6. The memory module according to claim 5, wherein the plurality of solder balls are directly disposed on the module substrate. And eight further comprise, as described in the patent application scope, the memory module, wherein the 第16頁 1260069Page 16 1260069 記憶體封裝件係具有相同之尺寸外觀。 s8、如申請專利範圍第1項所述之記憶體模組,其中該些 曰日片載板係k自於可撓性基板(flexible substrate)與印 刷電路板之其中之_。 9、如申請專利範圍第1項所述之記憶體模組,其中每一 記憶體封裝件係包含有—強化板(suffener),其係黏結 於對應之晶片載板。 10、一種記憶體模組之製造方法,包含: 相互堆疊排列複數個記憶體封裝件,每一記憶體封裝 件係包含有一記憶體晶片及一晶片載板,每一晶片載板係 包含有複數個外接指,其係形成於對應晶片載板之同一侧 邊; 形成一模組封膠體,以密封該些記憶體封裝件; 切割該模組封膠體,以使該模組封膠體具有一接合 面,以顯路该些外接指之侧面; 形成一金屬層於該模組封膠體,該金屬層並形成於該 模組封膠體之該接合面;及 由該金屬層形成複數個外接墊,該些外接墊係連接該 些外接指之侧面。 1 1、如申請專利範圍第1 0項所述之記憶體模組之製造方 法,其中該金屬層係以電鍍方式形成。 12、如申請專利範圍第1 〇項所述之記憶體模組之製造方 法,其中該些外接墊係以雷射切割該金屬層之方式形成。 1 3、如申請專利範圍第1 〇項所述之記憶體模組之製造方Memory packages have the same size appearance. S8. The memory module of claim 1, wherein the plurality of carrier substrates are from a flexible substrate and a printed circuit board. 9. The memory module of claim 1, wherein each of the memory packages comprises a suffener that is bonded to the corresponding wafer carrier. 10. A method of fabricating a memory module, comprising: stacking a plurality of memory packages stacked on each other, each memory package comprising a memory chip and a wafer carrier, each wafer carrier comprising a plurality of An external finger is formed on the same side of the corresponding wafer carrier; a module encapsulant is formed to seal the memory packages; and the module encapsulant is cut to have a bonding of the module encapsulant Forming a metal layer on the module sealing body, the metal layer is formed on the bonding surface of the module sealing body; and a plurality of external pads are formed by the metal layer The external pads are connected to the sides of the external fingers. 1 1. The method of manufacturing a memory module according to claim 10, wherein the metal layer is formed by electroplating. 12. The method of fabricating a memory module according to claim 1, wherein the external pads are formed by laser cutting the metal layer. 1 3. The manufacturer of the memory module as described in the first paragraph of the patent application scope 第17頁 1260069 ——-~^ 六、申請專利範圍 、 法,其中兮此&amp; &amp; ^ u 0片載板之該些外接指為垂 、T该些外接墊係與該呰曰曰月私 直向連接。 14、 如申請專利範圍第10項所述之記憶體模組,製 法,其中該些外接墊之數量係小於該些晶片載板之δΛ二 接指之數量。 15、 如申請專利範圍第10項所述之記憶體模組之製造方 法,其中該些外接墊之面積係大於該些外接指之側面面 積0Page 17 1260069 ——-~^ VI. Application for patent scope and law, in which the external fingers of this &amp;&amp; ^ u 0 carrier board are vertical, T, and the external pads and the month Privately connected. 14. The memory module of claim 10, wherein the number of the external pads is less than the number of the δ Λ fingers of the wafer carriers. 15. The method of manufacturing a memory module according to claim 10, wherein the area of the external pads is greater than the side area of the external fingers. 1 6、如申請專利範圍第1 〇項所述之記憶體模組之裝方 法,其另包含:接合該模組封膠體之該接合面於一模組基 板’該模組基板係具有複數個連接墊,其係導通該些外接 塾〇 1 7、如申請專利範圍第1 6項所述之記憶體模組之製造方 法’其另包含複數個銲球,其係設於該模組基板。 1 8、如申請專利範圍第丨〇項所述之記憶體模組之製造方 法,其中該些記憶體封裝件具有相同之尺寸外觀。 19、 如申請專利範圍第10項所述之記憶體模組之製 法’其中該些晶片載板係選自於可撓性基板(f丨e substrate)與印刷電路板之其中之—。 e 20、 如申請專利範圍第10項所述之記憶體模組 法,其中每一記憶體封裝件係包含有一強化板 衣&amp;方 (st i f f ener),其係黏結於對應之晶片載板。The method of loading a memory module according to the first aspect of the invention, further comprising: bonding the bonding surface of the module sealing body to a module substrate; the module substrate has a plurality of The connection pad is electrically connected to the external device. The method for manufacturing a memory module according to claim 16 is further comprising a plurality of solder balls attached to the module substrate. The method of manufacturing a memory module as described in claim </ RTI> wherein the memory packages have the same size appearance. 19. The method of claim 4, wherein the wafer carrier is selected from the group consisting of a flexible substrate and a printed circuit board. The memory module method of claim 10, wherein each of the memory packages comprises a reinforced stencil & splicer, which is bonded to the corresponding wafer carrier . 第18頁Page 18
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