TW451455B - Stacked semiconductor packaging - Google Patents
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- TW451455B TW451455B TW089119589A TW89119589A TW451455B TW 451455 B TW451455 B TW 451455B TW 089119589 A TW089119589 A TW 089119589A TW 89119589 A TW89119589 A TW 89119589A TW 451455 B TW451455 B TW 451455B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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Description
Λ 5 455 五'發明說明(1) 【發明之應用領域】 別是=㈣關於Γ種堆疊半導體構裝的結構與方法,特 構與方法。種將半導體構裝元件相堆疊的半導體構裝的結 【發明背景】 導體ί2子ί品不斷朝輕、薄、翅、小的趨勢發展,半 尺寸、:也不斷以高密度、多功能為發展趨勢,小 件:堆:^ 11成為電子產品以及半導體構裝的要求條 結合,ϊ = ϊ體構裝,將元件或晶片以上下堆疊方式 性能。傳ΓΓί:面式的構裝方式具有更高的構裝密度與 導線架型dd:堆疊半導體構装之技術,例如,標準 將該元件:疊:及2Ϊ成型為一較薄的構裝元件,然後 簡單且已線架外腳電性接合。該技術製程 然有-些缺點限制其發展牛m裂上。然而其仍 另外堆制,無法達到極薄的要求, 接來達成,缺少彈性運用空間。 守啄朱外腳之連 因此’為解決上述簡3自 構裝方式,以配要一種新的堆4半導體 ,展万氕以配口+導體構裝之發展趨勢。 【發明之目的及概述】 本發明的主要目的A w, 構與方法,可達到高心體構裝的結 双在度、具彈性運用空間以及製程Λ 5 455 Five 'Invention Description (1) [Application Field of the Invention] Others = ㈣ About the structure and method, special structure and method of Γ stacked semiconductor structures. A semiconductor structure knot that stacks semiconductor structure elements [Background of the Invention] The conductor 22 sub products continue to develop toward the trend of lightness, thinness, fins, and smallness, and the half-size: also continues to develop with high density and multifunction Trend, small pieces: stack: ^ 11 becomes a combination of requirements for electronic products and semiconductor packaging, ϊ = carcass packaging, performance of components or wafers stacked up and down. Biography ΓΓί: Surface mounting method has higher mounting density and lead frame type dd: Stacked semiconductor mounting technology, for example, standard components: stack: and 2Ϊ are formed into a thinner mounting component, Then simply and electrically connect the outer legs of the wire frame. However, this technology has some disadvantages that limit its development. However, it is still stacked and cannot meet the extremely thin requirements, which is then achieved, and it lacks flexibility in application space. Keeping up the connection of Zhu's outer feet Therefore, in order to solve the above-mentioned simple 3 self-assembly method, a new stack of 4 semiconductors is required, and the development trend of arranging the connector + conductor structure is shown. [Objective and Summary of the Invention] The main purpose of the present invention, A w, structure and method, can achieve the structure of high-cardioid body structure.
ί 45 5ί 45 5
五〜發明說明(2) 簡易的要求。 根據本發明之半導體堆疊構裝結構,係直接將複數個 半導體構裝之元件相堆疊’元件之間以接合膠彼此黏結, 其中該元件係包含一基板以及構裝於其上之一晶片。而堆 ©之方式係將7G件以晶片對晶片 '基板對基板的方式依序 堆疊而成,該晶片為磨薄之超薄元件,而基板亦利用超薄 技術製造’如此可達到高構裝密度要求且製程簡易。 根據本發明之半導體堆疊構裝結構,堆疊之元件,其 基板預先配合需要完成適當的導線與輸出入墊(I/〇 pad )的佈局(Layout),相疊合的基板之間以連接線路相連 接以達成訊號連結’在構裝上具有較大的彈性運用空間。 根據本發明之半導體堆疊構裝之結構,更可在相疊合 的7C件之間’夾合一散熱片,以增進散熱效果。且該散熱 片可兼具支撐之功能,增加堆疊構裝結構的強度以及利於 組裝。 根據本發明的一種堆疊構裝的方法,包括下列步驟: 提供複數個半導體構裝的元件,其中,每一該元件1有一 基板,該基板係已預先完成導線及輸出入墊的佈局,並有 -晶片覆晶構裝於每一基板的一表面± ;將該複數個元件 之基板以f接線路相串# :以及’將該複數個元件以晶片 對晶片、基板對基板之方式依序相堆疊,接合面之間並以 接合膠相黏結而成為一元件模組。 根發明’可將以上述方法堆疊而成之元件模組, 之最下層基板藉由焊料球焊接於—電路板上。V. Description of the invention (2) Simple requirements. According to the semiconductor stacking structure of the present invention, a plurality of semiconductor-structured components are directly stacked with each other to be bonded to each other with a bonding glue, wherein the component includes a substrate and a wafer mounted on the substrate. The stacking method is to sequentially stack 7G pieces in a wafer-to-wafer 'substrate-to-substrate manner. The wafer is a thin and ultra-thin component, and the substrate is also manufactured using ultra-thin technology.' The density is required and the process is simple. According to the semiconductor stacking structure of the present invention, the substrates of the stacked components need to be pre-matched to complete the layout of the appropriate wires and I / O pads, and the overlapping substrates are connected to each other by the wiring phase. The connection to achieve a signal link has a large flexibility in the use of the structure. According to the structure of the semiconductor stack structure of the present invention, a heat sink can be sandwiched between the stacked 7C pieces' to improve the heat dissipation effect. In addition, the heat sink can have a supporting function, increase the strength of the stacked structure and facilitate assembly. A method for stacking structures according to the present invention includes the following steps: providing a plurality of semiconductor-structured components, wherein each of the components 1 has a substrate, and the substrate is pre-completed with the layout of the wires and the input / output pads, and -Wafer-on-chip structure is mounted on one surface of each substrate ±; the substrates of the plurality of components are connected in series by f: #; and 'the plurality of components are sequentially phased in a wafer-to-wafer, substrate-to-substrate manner The components are stacked, bonded between the bonding surfaces and bonded with a bonding adhesive to form a component module. According to the invention, a component module stacked in the above-mentioned method can be used, and the lowermost substrate is soldered to a circuit board by a solder ball.
第5頁 45 1 45 5Page 5 45 1 45 5
五*發明說明(3) 亦可依系統空間之需求,將堆疊之元件模組直立於一 電路板’然後以焊料將該元件模組基板之間的一連接線路 焊接於該電路板達成訊號連結。 上述方法堆疊構裝形成之元件模組可與另—元件模組 或另一元件,藉由焊料球相疊接合成一新的元件模組❶ 為使對本發明的目的、構造特徵及其功能有進一步的 了解’茲配合圖示詳細說明如下: 、 【實施例詳細說明】 「第1A、1B圖」繪示根據本發明的第—個實施例,其 中四個覆晶構裝的元件1〇、2〇、30、40 ’以堆疊方式構裝 成一元件模組,並以焊料球13焊接於一電路板5〇。 、 如「第1A圖」所繪示,一第一元件1〇包含—第一基板 11以及一第:晶片12,其中該第一晶片12係以覆晶(FUp Chip)的方式構裝於該第一基板丨丨之一表面,而該第一基 板11係已預先完成適當之導線與輸出入墊(I/〇 Pad)之 佈局。該第一基板Π之另一表面,則沾附有焊料球丨3。同 樣地’一第,元件20,包含一第二基板21以及一第二晶片 2丄其中該第二晶片22以覆晶的方式構裝於該第二基板j 1 ^ 一表面,而該第二基板丨丨亦已預先完成適當之導線與輸 入墊(I/〇 Pad)之佈局。該第一基板11與第二基板 U,可在兩相鄰邊之間’藉由在撓性基板1〇〇上的一 連接線路101相訊號連結。另外,一第三元件3〇,亦可以 同樣方式,藉由一第二連接線路1〇2與該第二元件2〇串 接。而-第四元件40亦以同樣方式,藉由一第三連接線路Five * Description of the invention (3) According to the requirements of the system space, the stacked component modules can also be erected on a circuit board, and then a connection line between the component module substrates is soldered to the circuit board with solder to achieve a signal connection. . The component module formed by the above-mentioned stacked configuration can be combined with another component module or another component, and a new component module is formed by overlapping solder balls. In order to make the objects, structural features and functions of the present invention useful, Further understanding is described in detail with the following illustrations: [Detailed description of the embodiment] "Figures 1A, 1B" shows the first embodiment of the present invention, in which four flip-chip components 10, 20, 30, and 40 'are assembled into a component module in a stacked manner and soldered to a circuit board 50 with solder balls 13. As shown in "Figure 1A", a first component 10 includes a first substrate 11 and a first: wafer 12, wherein the first wafer 12 is mounted on the chip in a FUp Chip manner. One surface of the first substrate 丨, and the first substrate 11 is pre-completed with proper wiring and I / O pad layout. On the other surface of the first substrate Π, solder balls 3 are attached. Similarly, the first component 20 includes a second substrate 21 and a second wafer 2. The second wafer 22 is mounted on a surface of the second substrate j 1 ^ in a flip-chip manner. The substrate 丨 丨 has also completed the layout of appropriate wires and input pads (I / 〇Pad) in advance. The first substrate 11 and the second substrate U can be connected between two adjacent sides' by a connection signal 101 on the flexible substrate 100. In addition, a third element 30 can also be serially connected to the second element 20 through a second connection line 102 in the same manner. And-the fourth element 40 is also the same through a third connection line
第6頁 451455 五«發明說明(4) 1 03與該第三元件30串接。前述第三元件3〇,同樣地.,包 含一第三基板31以及一第三晶片32覆晶構裝於該第三基板 31上,而前述第四元件4〇,同樣地,包含一第四基板41以 及一第四晶片42覆晶構裝於該第四基板4丨上。在進行堆疊 構裝時’先以點膠頭60在接合面上塗佈接合膠61,然後將 各疋件分別以晶片對晶月、基板對基板的方式依序相疊 合。前述晶片所構裝之基板可為硬板亦可為軟板。 而如「第1B圖」所繪示根據本發明第一個實施例之堆 疊構裝之結構,該第一元件丨〇與該第二元件2 〇以晶片對晶 片的方式相疊’其中該第一晶片丄2與該第二晶片2 2間以接 合膠61相黏結,而該第—基板〗丨與該第二基板21之間藉由 該第一連接線路1 〇 1相連結。該第二元件2 〇與該第三元件 30以基板對基板的方式疊合,其中該第二基板21與該第三 基板31間以接合膠61相黏結,而該第二基板21與該第三基 板之間藉由該第二連接線路丨〇2相連結。.該第三元件3〇與 該第四元件40以晶片對晶片的方式相疊,其中該第三晶片 32與該第四晶片42間以接合膠62相黏結,而該第三基板31 與該第四基板41之間則藉由該第三連接線路〗〇 3相連結。 而該第一基板11則與該電路板5〇藉由該焊料球1 3相結合。 在上述第一個實施例中,各堆疊的元件之間亦可夾合 一散熱片而如「第1 C圖」所繪示。在該第一晶片1 2與該第 二晶片22之間夾有一第一散熱片71並以接合膠61彼此黏 合。在該第二基板21與該第三基板31之間夾有一第二散熱 片7 2並以接合膠6 1彼此黏合。在該第三晶片3 2與該第四晶Page 6 451455 Five «Explanation of Invention (4) 1 03 is connected in series with the third element 30. The third element 30 also includes a third substrate 31 and a third wafer 32 on the third substrate 31, and the fourth element 40 also includes a fourth substrate 40. The substrate 41 and a fourth wafer 42 are flip-chip mounted on the fourth substrate 4 丨. When performing the stacking structure ', the bonding head 61 is coated with the dispensing head 60 on the bonding surface, and then the pieces are sequentially stacked in a wafer-to-crystal moon and substrate-to-substrate manner. The substrate configured by the aforementioned wafer may be a hard board or a soft board. As shown in "Figure 1B", the stacked structure according to the first embodiment of the present invention, the first element 丨 0 and the second element 20 are stacked in a wafer-to-wafer manner, wherein the first A wafer 丄 2 and the second wafer 22 are bonded with a bonding adhesive 61, and the first substrate 217 and the second substrate 21 are connected by the first connection line 101. The second element 20 and the third element 30 are stacked in a substrate-to-substrate manner, wherein the second substrate 21 and the third substrate 31 are bonded with a bonding adhesive 61, and the second substrate 21 and the third substrate 30 are bonded together. The three substrates are connected by the second connection line 02. The third component 30 and the fourth component 40 are stacked in a wafer-to-wafer manner, wherein the third wafer 32 and the fourth wafer 42 are bonded with a bonding adhesive 62, and the third substrate 31 and the The fourth substrates 41 are connected by the third connection line [03]. The first substrate 11 is combined with the circuit board 50 through the solder balls 13. In the above-mentioned first embodiment, a heat sink can also be sandwiched between the stacked components as shown in "Figure 1C". A first heat sink 71 is sandwiched between the first wafer 12 and the second wafer 22 and adhered to each other with a bonding adhesive 61. A second heat sink 7 2 is sandwiched between the second substrate 21 and the third substrate 31 and is bonded to each other with a bonding adhesive 61. In the third wafer 32 and the fourth crystal
戽5 1 45 5 --------- 五、發明說明(5) 片42之間夾有一第三散熱片73並以接合膠61彼此黏合。 「第2 A圖」為根據本發明的第二個實施例之堆疊構裝 %構示意圖。一第一元件模組1藉由焊料球丨3結合於一電 略极5 0上’一第二元件模組2堆疊於該第一元件模組1上, 兩者之間亦藉由焊料球丨3相結合。其中,該第一元件模組 包括一第一元件丨〇與—第二元件2 〇,以前述第一個實施 ^所述相同之方式疊合而成。該第一元件1〇係包括一第一 反11以及一第一晶片1 2覆晶構裝於該第一基板丨丨上。而 ^第二元件20係包括一第二基板21以及一第二晶片22覆晶 ,裝於該第二基板21上。該第一元件1〇與該第二元件2〇以 曰曰片對晶片的方式相疊,其中該第一晶片j 2與該第二晶片 2間以接合膠6 1相黏結,而該第一基板u與該第二基板2 ! 之間藉由一第一連接線路1 〇 4相連結。而該第一基板丨丨則 與該電路板50藉由介於其間的焊料球13相結合。 該第二元件模組2則包括一第三元件3〇以及一第四元 件40,以前述第一個實施例所述相同之方式構裝而成。而 該第三元件3 0係包括一第三基板3丨以及一第三晶片3 2覆晶 構裝於該第一基板11上。而該第四元件4〇係包括—第四基 板41以及一第四晶片42覆晶構裝於該第四基板41上。其 中’該第三元件30與該第四元件4〇以晶片對晶片的方式相 璧’其中該第三晶片3 2與該第四晶片4 2間以接合膠6 2相黏 結,而該第三基板3 1與該第四基板4 1之間則藉由一第二連 接線路1 0 5相連結。該第三基板3 1與前述第一元件模組1 的該第二基板2 1藉由介於其間的焊料球丨3相結合。戽 5 1 45 5 --------- 5. Description of the invention (5) A third heat sink 73 is sandwiched between the sheets 42 and adhered to each other with a bonding adhesive 61. "Figure 2A" is a schematic diagram of a stacking structure according to a second embodiment of the present invention. A first component module 1 is bonded to an electrical pole 50 through a solder ball 3, and a second component module 2 is stacked on the first component module 1 with a solder ball in between.丨 3 combined. The first component module includes a first component and a second component, which are stacked in the same manner as described in the first embodiment. The first component 10 includes a first substrate 11 and a first wafer 12 mounted on the first substrate. The second element 20 includes a second substrate 21 and a second wafer 22 that are mounted on the second substrate 21. The first element 10 and the second element 20 are stacked in a wafer-to-wafer manner, wherein the first wafer j 2 and the second wafer 2 are bonded with a bonding glue 61 and the first The substrate u and the second substrate 2! Are connected by a first connection line 104. The first substrate 丨 丨 is combined with the circuit board 50 through the solder balls 13 therebetween. The second component module 2 includes a third component 30 and a fourth component 40, which are constructed in the same manner as described in the first embodiment. The third component 30 includes a third substrate 31 and a third wafer 32 mounted on the first substrate 11. The fourth component 40 includes a fourth substrate 41 and a fourth wafer 42 mounted on the fourth substrate 41. Wherein, the third element 30 and the fourth element 40 are in a wafer-to-wafer manner, wherein the third wafer 32 and the fourth wafer 42 are bonded with a bonding adhesive 62, and the third The substrate 31 and the fourth substrate 41 are connected by a second connection line 105. The third substrate 31 is combined with the second substrate 21 of the first element module 1 by the solder balls 3 interposed therebetween.
第8頁 五、·發明說明(6) 在上述第二個實施例中,該第一元件與該第二元件之― 間以及該第三元件與該第四元件之間亦可分別夾合一散熱 片。如「第2Β圖」所繪示。在該第一晶片12與該第二晶片 22之間夾有一第一散熱片74並以接合膠61彼此黏合。在該 第三晶片32與該第四晶片42之間夾有—第二散熱片75並以 接合膠61彼此黏合。 「第3Α圖」繪示本發明的第三個實施例之堆疊構裝結 構。一堆疊構裝之元件模組3,以直立方式結合於一電路 板5 0。該元件模組3.包括四個元件(第—、第二、第三以 及第四元件)1 0、2 0、3 0、4 0以晶片對晶片、基板對基板 的方式依序相疊合,元件之間以接合膠6丨彼此黏結。該第 一元件10與該第二元件20之基板邊緣以一第一連接線路 106相連接’該第二元件20與該第三元件3〇之基板邊緣以 一第二連接線路107相連接,該第三元件3〇與該第四元件 4 0之基板邊緣則以一第三連接線路丨〇 8相連接。較佳上, 該第一連接線路1 0 6與該第三連接線路〗〇 了位於該元件模組 3之同側,而該第二連接線路;! 〇 7則位於另一側,該第」連 接線路1 0 6之中段部分藉由焊料丨5焊接於該電路板^ 〇,以 達訊號連結’而該第三連接線路丨〇 8則藉由接合膠6丨與該 電路板5 0相黏結固定。 σ # 上述第三個實施例中,各元件之間亦可爽合一散熱 片,而如「第3Β圖」所繪示。在各元件1 〇、2 〇 : 3 〇、4’〇'之 間分別夾有一散熱月76、77、78並以接合膠6丨彼此黏合。 另外,在前述第二個實施例中的元件模級,亦可以直Page 8 V. Description of the invention (6) In the second embodiment described above, the first element and the second element may be sandwiched between the third element and the fourth element. heat sink. As shown in "Figure 2B". A first heat sink 74 is sandwiched between the first wafer 12 and the second wafer 22 and adhered to each other with a bonding adhesive 61. A second heat sink 75 is sandwiched between the third wafer 32 and the fourth wafer 42 and is bonded to each other with a bonding adhesive 61. "Fig. 3A" shows the stacked structure of the third embodiment of the present invention. A stacked component module 3 is coupled to a circuit board 50 in an upright manner. The component module 3. Includes four components (first, second, third, and fourth components) 10, 20, 30, and 40 sequentially stacked in a wafer-to-wafer, substrate-to-substrate manner , The components are bonded to each other with a bonding glue 6 丨. The edge of the substrate of the first element 10 and the second element 20 is connected by a first connection line 106. The edge of the substrate of the second element 20 and the third element 30 is connected by a second connection line 107. The third element 30 and the edge of the substrate of the fourth element 40 are connected by a third connection line 08. Preferably, the first connection line 106 and the third connection line are located on the same side of the component module 3, and the second connection line; 〇7 is on the other side, and the middle part of the first connection line 106 is soldered to the circuit board by soldering 丨 5 to connect with a signal, and the third connection line 〇〇8 is joined by bonding Adhesive 6 丨 is fixed to the circuit board 50. σ # In the third embodiment described above, a heat sink can also be integrated between the components, as shown in "Figure 3B". A heat radiation month 76, 77, 78 is sandwiched between each of the components 10, 20: 3, 4'0 ', and is bonded to each other with a bonding adhesive 6 丨. In addition, the component die stage in the second embodiment described above can also be directly
第9頁 4 δ 1 45 5 *----- 五,發明說明(7) 立方式結合於一系統電路板 以上所述者,僅為本發 非用來限定本發明的實施範 本發明之精神下,當可作適 裝元件並不限定為覆晶構裝 之元件來取代,例如可為打 的構裝結構,亦可為捲帶接 構’或是以晶片直接組於基 構裝結構等;故凡依本發明 與修飾’皆為本發明專利範 明其中的較佳實施例而已,並 圍,熟習該項技術者在不脫離 當的修改,例如,該半導體構 之元件,而可以其它方式構裝 線式(wire bonding)與封膠 合(Tape Bonding)的構裝結 板(Chip 〇n Substrate )的 中請專利範圍所作的均等變化 圍所涵蓋。Page 9 4 δ 1 45 5 * ----- 5. Description of the invention (7) The above-mentioned method is combined with a system circuit board, which is only for the purpose of this invention and not to limit the spirit of the invention. In the following, when it can be used as a suitable component, it is not limited to be replaced by a flip-chip structure. For example, it can be a mounted structure, it can also be a tape-and-reel structure, or it can be directly assembled on the base structure with a wafer. Therefore, all the inventions and modifications according to the present invention are the preferred embodiments of the invention patents, and those skilled in the art can make modifications without departing from, for example, the components of the semiconductor structure, but can use other methods. Equivalent changes made in the scope of the patent application for the assembly of wire bonding and tape bonding (Chip On Substrate) are covered.
第10頁 451455 圖式簡單說明 【圖式簡單說明】 第1 A圖為本發明之第一個實施例中,各元件在堆疊前之結 構示意圖,並有一點膠頭對元件塗佈接合膠。 第1B圖為本發明之第一個實施例之堆疊構裝結構示意圖。 第1C圖為在第一個實施例之堆疊構裝結構中的各元件之 間,更夾合一散熱片之示意圖。 第2A圖為本發明之第二個實施例之堆疊構裝結構示意圖。 第2B圖為在第二個實施例之堆疊構裝結構中的第一元件與 第二元件以及第三元件與第四元件之間,更分別夾 合一散熱片之示意圖。 第3A圖為本發明之第三個實施例之堆疊構裝結構示意圖。 第3B圖為在第三個實施例的堆疊構裝結構中的各元件之 間,更夾合一散熱片之示意圖。 【圖式符號說明】Page 10 451455 Brief description of the drawings [Simplified description of the drawings] Figure 1A is a schematic diagram of the structure of each component before being stacked in the first embodiment of the present invention, and there is a glue head to apply bonding glue to the components. FIG. 1B is a schematic diagram of a stacked structure according to the first embodiment of the present invention. FIG. 1C is a schematic diagram of sandwiching a heat sink between components in the stacked structure of the first embodiment. FIG. 2A is a schematic diagram of a stacked structure of a second embodiment of the present invention. FIG. 2B is a schematic diagram of a heat sink being sandwiched between the first element, the second element, and the third element and the fourth element in the stacked structure of the second embodiment. FIG. 3A is a schematic diagram of a stacked structure according to a third embodiment of the present invention. FIG. 3B is a schematic diagram of a heat sink sandwiched between components in the stacked structure of the third embodiment. [Illustration of Symbols]
丨最·丨 most
1,2, 3 元件模組 1 0,2 0,3 0,40 元件 11,21,31,41 基板 1 2, 2 2, 3 2, 42 晶片 13 焊料球 15 焊料 50 電路板 60 點膠頭 61 接合膠 71,72, 73 散熱片 第1〗頁 4 5 1 45 51,2,3 component module 1 0,2 0,3 0,40 component 11,21,31,41 substrate 1 2, 2 2, 3 2, 42 wafer 13 solder ball 15 solder 50 circuit board 60 dispensing head 61 Glue 71, 72, 73 Heatsink Page 1 〖Page 4 5 1 45 5
第12頁Page 12
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