TWI259575B - Circuit board, electronic device, electro-optic device, and electronic machine - Google Patents

Abstract

The purpose of the present invention is to reduce the parasitic capacitance generated in the conductive portion for stabilizing the performance. The solution is to allocate a structural member 18 with a low permittivity less than 4 on the substrate 15, and to dispose a functional film 140 divided by the structural member 18 with a low permittivity.

Description

1259575 (1) Field of the Invention The present invention relates to an electronic device such as an optoelectronic device or a semiconductor device, which can be applied to a wiring board of an electronic device and to an optoelectronic device electronic device of the display device. [Prior Art] The display device includes, for example, a liquid crystal display device including a liquid crystal element, an organic electroluminescence (hereinafter referred to as an organic EL) element, or an organic EL display device. In particular, the organic EL display device is excellent in display performance due to high luminance, self-luminescence, DC low voltage driving, high-speed response, and the like. Further, the display device can be made thinner, lighter, and lower in power consumption (see, for example, Patent Document 1). [Patent Document 1] International Publication No. WO9 8/3 6406. [Embodiment] [Problem to be Solved by the Invention] It is known that an optoelectronic device causes an error in data rewriting due to parasitic capacitance generated in a wiring closet. This inter-wiring capacitance is increased depending on the length of the wiring and the like as the wiring lengthens. Therefore, for example, when a photovoltaic device is used as the display device, it is a cause of hindering the formation of a large screen. In recent years, semiconductor devices such as memories have been required to be highly integrated. At the same time, the operation speed is increased, and thus the capacitance generated between the conductive portions of the wiring or the like becomes a problem. -5- (2) 1259575 The present invention has been made in view of the above problems, and an object of the present invention is to provide a photovoltaic substrate having a stable performance, and a photovoltaic device which can achieve a large screen and can stably operate over a long period of time. And an electronic device using the same [method for solving the problem] In order to achieve the above object, a wiring board according to a first aspect of the present invention includes a substrate including a wiring; and a member having a dielectric constant of 4 or less disposed on a surface of the substrate; The upper portion is provided with an area where the member is not formed. Usually, the dielectric film of the tantalum oxide film is 4. 2 or less, so the member has a low dielectric constant. According to the wiring board of the present invention, a member having a dielectric constant of 4 or less is disposed. For example, when a photovoltaic material is provided in a region where the member is not formed, and a conductive portion such as an electrode polymer is formed thereon, the cause can be reduced. The conductive portion and the parasitic capacitance generated by the wiring. A second wiring board according to the present invention includes a substrate including an insulating substrate and wiring, a member disposed on the upper surface of the substrate, and a region on which the member is not formed, and the wiring is disposed on the insulating substrate and the substrate. The dielectric constant of the member is lower than the dielectric constant of the insulating substrate. When the insulating substrate is used for a display device or the like, it is preferable to use glass, quartz or the like as the insulating substrate. In this case, the dielectric constant of the member is preferably 4 or less. In the above wiring board, the dielectric constant of the member is 3 or less, more preferably 2. 5 or less. A plurality of such areas may be provided on the base surface. In the above wiring board, for example, when the substrate contains an active element, the parasitic -6 - (3) 1259575 has a reduced capacity 'the active element can be activated by a higher frequency or high speed driving signal. The active element is, for example, a semiconductor element such as a transistor or a double terminal element such as ΜίΜ. In the above wiring board, the member is, for example, a cerium oxide-containing glass, an alkyl oxy-oxygen polymer, a courtyard sesquioxide compound, a hydrogenated alkyl sesquioxane polymer, or a polyaryl ether. A spin-on glass film, a diamond film, a fluorinated amorphous carbon film, and the like. Wherein the member may be composed of a porous material. Specifically, it is an aerosol, a gel in which fine particles of porous cerium oxide or magnesium fluoride are dispersed, a fluorine-based polymer, a porous polymer, and a fine particle in a predetermined material. The electronic device of the present invention is characterized in that a functional film is disposed corresponding to the region of the wiring substrate described above. In the above electronic device, the member having a lower dielectric constant is disposed between the functional films, so that the parasitic capacitance generated between the functional films can be reduced. In the above electronic device, when a conductive film such as an electrode is disposed above the functional film, the wiring and the electrode are separated by the member, so that the parasitic capacitance generated between the wiring and the electrode can be reduced. In particular, when the wiring is supplied with a signal, problems such as signal delay and inaccurate sound can be reduced. The material for forming the conductive film is, for example, an organic conductive material, an inorganic conductive material (metal or the like), a mixture containing the same, and the like. In the above electronic device, it is not limited to the case where all of the members are disposed around the functional film. A photovoltaic device according to a first aspect of the present invention, comprising: a substrate comprising an insulating (4) 1259575 substrate and wiring; a plurality of pixel electrodes disposed on the substrate; a counter electrode disposed above the pixel electrode; a functional film disposed on the photovoltaic material between the plurality of pixel electrodes and the opposite electrode; a member disposed around the functional film and disposed between the opposite electrode and the upper surface; dielectric of the member The rate is lower than the dielectric ratio of the insulating substrate. In the above photovoltaic device, it is preferable to use glass or quartz as the insulating substrate. In this case, the dielectric constant of the member is preferably 4 or less. A photovoltaic device according to a second aspect of the present invention, comprising: a substrate including a wiring; a plurality of pixel electrodes disposed on the substrate; a counter electrode disposed above the pixel electrode; and a plurality of a functional film of a photovoltaic material between the pixel electrode and the counter electrode; a member disposed around the functional film and disposed between the counter electrode and the upper surface; the dielectric constant of the member is 4 or less. In the above photovoltaic device, the dielectric constant of the member is desirably 3 or less or 2. 5 below. The above photoelectric material may be, for example, a material for an organic EL element, a liquid crystal element, an electrophoretic element, or a material for releasing an electronic element. In the above photovoltaic device, the base system further includes an active device connected to the pixel electrode, and the wiring may include a signal wiring for supplying a signal to the active device. The active device has, for example, a semiconductor element such as a transistor or a two-terminal element such as MIM. In the above photovoltaic device, the member contains yttria glass, an alkyl siloxane polymer, an alkyl sesquioxane polymer, a hydrogenated alkyl sesquiterpoxy-8 - (5) 1259575 alkyl polymer, and a poly Any of spin coating glass films, diamond films, and fluorinated amorphous carbon films of the aryl ether. The member may be composed of a porous material. Specifically, the member is an aerosol, a gel in which porous cerium oxide or a fluorinated fine particle is dispersed, a fluorine-based polymer, a porous polymer, and a fine particle in a predetermined material. In the above light: in the electric device, a barrier layer for suppressing the penetration of the substance may be disposed between the member and the active member. When the member is used as a material having a low dielectric constant, the low dielectric material is generally a porous material or a low-density material, and therefore, a substance such as metal or oxygen is easily penetrated, and a substance that penetrates sometimes generates an active material. Problems such as deterioration of components or corrosion such as wiring. By providing the barrier layer between the member and the active member, it is possible to suppress penetration of a substance which causes an important cause such as deterioration or corrosion. At least a portion of the member is covered with a protective layer that prevents material from passing therethrough. The substance valley easily penetrates the above member, and therefore, at least a part of the member is covered with the protective film, and the diffusion of the substance through the member can be suppressed. Thereby, the wiring or active components inside the photovoltaic device can be reduced or deteriorated. Low dielectric constant materials are generally most fragile mechanically, and the protective film on the member has the effect of reinforcing mechanical properties. The electronic device of the present invention is characterized in that the electronic device is used as a display means. The electronic device according to the present invention reduces parasitic capacitance, for example, has a good compliance and stable display action for high frequency or high speed input signals. -9 - (6) 1259575 Embodiments of the Invention The present invention will be described in detail below. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a view showing a cross-sectional structure of a photovoltaic device and a substrate of the present invention. The symbol 10 is a photovoltaic device, and the reference numeral 11 is a wiring substrate. The wiring board 11 is composed of a multi-layer wiring type including an active device 16 such as a thin film transistor (TFT) which is provided on the substrate 15, and an insulating layer. The photovoltaic device 1 is provided with a plurality of light-emitting regions 含有7 including a light-emitting layer of a functional film on the wiring substrate 1, and its light-emitting state is controlled by an active device 16. The interface of the plurality of light-emitting regions 丨7 is provided as a partition member (banking) 18 of the insulating layer. The photovoltaic device of the present invention is characterized in that the low dielectric material forms the spacer member 18. Forming the partition member 8 with a low dielectric material can reduce the parasitic capacitance generated between the conductive portions of the wiring or the like. The dielectric constant (specific dielectric ratio) of the low dielectric material is 4 or less, preferably 3 or less, more preferably 2 or less. In particular, the low dielectric constant material is composed of a porous material having a high porosity, and the low dielectric constant low dielectric constant material can be obtained. The method of forming the spacer member i 8 by using a low dielectric constant material, for example, by forming a layer using various methods such as CVD or CVD (chemical vapor deposition), and then forming a spacer of a predetermined shape by patterning such as etching or honing.丨 8. The low dielectric material may be, for example, a cerium oxide glass, an alkyl siloxane polymer, a sesquiterpene alkane polymer, a hydrogenated alkylsesquioxanes polymer, or a polyaryl ether. Spin-on glass film, diamond film and fluorinated non--10-(7) 1259575 crystalline carbon film. As the low dielectric constant material, for example, an aerosol, a gel in which fine particles of porous cerium oxide or magnesium fluoride are dispersed, a fluorine-based polymer, a porous polymer, and fine particles in a predetermined material can be used. For the aerosol, for example, a cerium oxide aerosol or an alumina-based aerosol can be used. The aerosol is a porous gel obtained by reacting a sol-gel of a cerium salt by a supercritical drying to obtain a porous body having a uniform ultrafine structure. The cerium oxide aerosol occupies more than 90% by volume of the pores, and the remainder is a material composed of tens of nanometers of fine Si 〇 2 particles condensed into dendrites. Changing the porosity adjusts the dielectric. a cerium oxide aerosol is a step of producing a wet gel by a sol-gel method; a step of curing the wet gel; and a supercritical drying step of drying the wet gel by a supercritical drying method to obtain a cerium oxide aerosol . The supercritical drying method is applied to a method in which a liquid in a jelly-like gel material formed by a solid phase and a liquid phase is replaced by a supercritical fluid, and the gel is dried in a state where the gel does not shrink, and the method can be dried. A high porosity aerosol is obtained. When the above-mentioned spin-on glass film is formed, the above-described supercritical drying method can also be used. The supercritical drying method can improve the coating property or the film quality. When the partition member 18 is formed of cerium oxide aerosol, the wet gel is applied onto the substrate by spin coating, and then supercritical drying is carried out, and the synthetic resin (organic matter) may be mixed in the wet gel. The synthetic resin at this time is a synthetic resin whose thermal reforming temperature is higher than the critical temperature of the supercritical fluid. For example, when the alcohol is used, the supercritical fluid n has a thermal reforming temperature higher than the critical temperature of the alcohol, such as hydroxypropylcellulose (HPC), polyvinyl butyral (PVB), and B-11. (8) 1259575 Cellulose (EC), etc. (Also, PVB and EC are soluble in alcohol and insoluble in water). When ether is used as the solvent, it is preferred to select a chlorine-based polyethylene or the like as the resin, and when C〇2 is used as the solvent, HPC or the like is preferably selected. The porous cerium oxide (having a porous Si〇2 film) is formed by a plasma CVD method (plasma chemical vapor phase growth method), and a reaction gas of SiH4 & N2 。 can be used. A porous Si 2 film was formed on the 3 丨〇 2 film. The Si〇2 film is formed by an atmospheric pressure CVD method (atmospheric pressure chemical vapor growth method) using a reaction gas containing TEOS (tetraethoxysilane) and oxygen (〇2) and a low concentration of ruthenium 3 (ozone). . Here, the low concentration of 〇3 means 〇3 which is lower than the concentration required for the oxidation of TEOS described above. The fluorine-based polymer or a material containing the same may be, for example, a perfluoroalkyl-polyether, a perfluoroalkylamine, or a perfluoroalkylpolyether-perfluoroalkylamine mixed film, etc., or may be a predetermined polymerization. A soluble or dispersible fluorocarbon compound is mixed in the binder. The polymer binder is, for example, polyvinyl alcohol, polyacrylic acid, polyvinyl pyrrolidone, sodium polyvinyl sulfonate, polyvinyl methyl ether, polyethylene glycol, poly alpha trifluoromethacrylic acid, polyvinyl Methyl ether-maleic anhydride copolymer, polyethylene glycol-propylene glycol copolymer, polymethacrylic acid, and the like. Further, the fluorocarbon compound is, for example, perfluorooctanoic acid-ammonium salt, perfluorooctanoic acid-tetramethylammonium salt, C7 and CIO perfluoroalkanesulfonate ammonium salt, C7 and CIO perfluoroalkanesulfonic acid tetramethylammonium salt, fluorinated alkyl group. A quaternary ammonium salt of quaternary ammonium iodide, perfluoroadipate and perfluoroadipate. Low dielectric materials use microparticles to form voids in the micropores between the microparticles or within the microparticles 12-1259575. The fine particles may use inorganic fine particles or organic fine particles. The inorganic fine particles are preferably amorphous. The inorganic fine particles are preferably composed of an oxide, a nitride, a sulfide or a halide of a metal, preferably a metal oxide or a metal halide, and most preferably a metal oxide or a metal fluoride. good. The metal atom is desirably Na, K, Mg, Ca, Ba, A1, Zn, Fe, Cu 'Ti, Sn, In, W, Y, Sb, Mn, Ga, V, Nb, T a 'Ag, Si, B , Bi, Mo, Ce, Cd' Be, Pb and Ni are more preferably Mg, Ca, B and Si. Inorganic compounds containing two metals can also be used. A particularly desirable inorganic compound is cerium oxide, which is cerium oxide. For example, micropores in the inorganic fine particles can be formed by crosslinking the cerium oxide molecules forming the particles. When the cerium oxide molecules are crosslinked, the volume is reduced and the particles become porous. The sol-gel method (described in Japanese Unexamined-Japanese-Patent No. 5 3 - 1 1 2732, JP-A-57-9051, etc.) or the precipitation method (APLIED OPTICS, 27, 3356 (1 9 8 8)) The (porous) inorganic fine particle dispersion having micropores can be directly synthesized. Further, the powder obtained by the dry precipitation method can be mechanically pulverized to obtain a dispersion. Commercially available porous inorganic fine particles (e.g., cerium oxide sol) can also be used. The inorganic fine particles having microvoids can be used in a state of being dispersed in a suitable medium. The dispersion medium is desirably water, an alcohol (e.g., methanol, ethanol, isopropanol) and a ketone (e.g., methyl ethyl ketone 'methyl isobutyl ketone). For example, the microparticles in the organic microparticles are formed by crosslinking the polymer forming the particles. When the polymer is crosslinked, the volume is reduced and the particles become porous. In order to cause cross-linking of the polymer forming the particles, it is preferred that the monomer of the synthetic polymer is 20 mol% or more as a polyfunctional monomer. The ratio of -13-(10) 1259575 of the polyfunctional monomer is desirably from 30 to 80 mol%, most preferably from 35 to 50 mol%. The polyfunctional monomer includes, for example, a diene (e.g., butadiene, pentadiene), an ester of a polyhydric alcohol and an acrylic acid (e.g., ethylene glycol diacrylate, 1,4-cyclohexyl methacrylate, /, C). An acid ester of dioctaerythritol succinate, a polyol and a methacrylic acid ester (for example, ethylene glycol dimethacrylate, 1,2,4-monohexane tetramethacrylate, pentaerythritol tetramethacrylate), divinyl Compounds (e.g., divinylcyclohexane, 1,4-divinylbenzene), divinylsulphate, bisacrylamides (e.g., methyl bis acrylamide), and bis methacrylamide. Microparticles between the particles can be formed by depositing at least two or more fine particles. A material having fine pores and particulate inorganic substances can also be used as the low dielectric material. In this case, after the above-mentioned material layer is formed by coating, an activation gas treatment is performed to separate the gas from the layer to form fine pores. Alternatively, two or more kinds of ultrafine particles (for example, MgF2 and Si〇2) may be mixed. At this time, the SiO2 generated by the thermal decomposition of ethyl citrate bonds the ultrafine particles. The thermal decomposition of ethyl phthalate produces carbon dioxide and water vapor by combustion of the ethyl moiety. Carbon dioxide and water vapor are separated from the layer, creating a gap between the ultrafine particles. Alternatively, the inorganic fine powder composed of porous cerium oxide and the binder may form a layer, or two or more fine particles composed of a fluoropolymer may be deposited, and a pore-generating layer may be formed between the fine particles. The low dielectric material may use a substance having a molecular structure grade 'and an increase in porosity, such as a polymer having a branched structure such as a net dendrimer. It is desirable to provide a barrier layer 20 between the partition member 18 and the active element 16 to prevent the metal -14-(11) 1259575 from passing therethrough. Since the partition member 18 formed of a low dielectric material is mostly composed of a porous material, a substance such as metal easily passes through the metal which enters the active element 16 through the metal of the partition member 18, and sometimes is actively activated by a chemical reaction. Element 16 is degraded. Providing the above-described barrier layer 20 between the partition member 18 and the active element 16 suppresses degradation of the active element 16 and suppresses degradation of element performance. The material for forming the barrier layer 20 may be, for example, a ceramic or a compound containing tantalum nitride, tantalum oxynitride, tantalum oxide or the like, or a material having an exothermic effect such as a nitride of aluminum or a carbide of tantalum. Boron nitride, boron dish, etc. The barrier layer 20 has a metal barrier and an exothermic effect, thereby reducing the influence of heat shrinkage of the partition member 18 composed of a low dielectric material. For example, one type containing a rare earth element (selected from Ce (钸), Yb (mirror), Sm (钐), Er (bait), Y (钇), La (镧), Gd (釓), Dy (镝) can be used. ), a material of at least one of Nd (ammonium), and a material of nitrogen, helium, aluminum, and oxygen. A layer having conductivity such as titanium nitride or tantalum nitride can also be formed. When the conductive barrier layer 20 is formed, the thickness or shape of the barrier layer is determined in order to prevent the effective wiring resistance from rising. At least a part of the partition member 18 composed of the above materials is preferably covered with a protective film 21 which can prevent a substance such as a liquid or a gas or a metal from passing therethrough. The partition member 18 formed of a low dielectric material is easily invaded by a substance, and therefore, in the manufacturing process or the like, the intrusion of the substance sometimes causes a decrease in the dielectric property of the partition member 18. At least a portion of the partition member 18 is covered with the protective film 2 1 to maintain the low dielectric property of the partition member 18, and the wiring has a low capacity of -15-(12) 1259575. In general, the low dielectric constant material is mechanically weak, but the above protective film 21 has an effect of reinforcing mechanical properties. The diffusion of the substance via the partition member i 8 can be suppressed, so that it is possible to prevent the other material from being affected by the substance of the partition member 18. The material for forming the protective film 21 is, for example, ceramic or contains tantalum nitride, tantalum oxynitride, tantalum oxide or the like. When a film is formed on the corner of the partition member 18, a highly flexible inorganic polymer or an organic polymer or the like can be used in addition to the inorganic spin-on glass system, the organic spin-on glass system, and the PSG (phosphor glass). When the film of the spin-on glass system is formed, the above-described supercritical drying method can be used. The supercritical drying method can improve the coating property and the film quality. The protective film 21 composed of the above materials can be formed by various coating methods such as spin coating, dipping coating, dispersion coating, and reflow. The protective film 21 may be a single layer structure or a multilayer structure. A protective film 21 may be formed instead of the above-described barrier layer 20. In other words, including the side facing the active element 16 and covering the partition member 18 with the barrier layer 20, the barrier layer 20 can be omitted. At this time, the protective film 2 can be formed using the forming material of the barrier layer 20 described above. The photovoltaic device 10 of the present invention is formed by forming the partition member 18 with a low dielectric material to reduce the parasitic capacitance generated between the conductive portions. Improve the speed of the action. When the operation speed is high, the parasitic capacitance and the impedance of the wiring must be considered, and the overall design of the wiring structure is required. The wiring substrate 11 of the present invention also includes a case where a low dielectric material is used for the other portions than the partition member. Next, an embodiment of an active matrix type display device using the EL device having the -16 - (13) 1259575 EL element will be described. In the drawings, the layers or members are formed into layers or members in order to be able to see the size of the elements on the drawing, and thus the ratio is sometimes different from the actual items. Fig. 2 is a schematic view showing the configuration of an organic EL display device according to an embodiment of the present invention. The organic EL display device 100 is an active type driving method using a TFT active element. The display device 100 sequentially laminates the active device portion 146 including the TFT active device, the organic EL device 140 including the functional film such as the light-emitting layer, the hole transport layer, and the electron transport layer, the cathode 154, and the package on the substrate 121. The structure of the department 147 and the like. Substrate 1 2 1 A glass substrate can be used in this example. Further, various known substrates used for photovoltaic devices such as a ruthenium substrate, a quartz substrate, a ceramic substrate, a metal substrate, a plastic substrate, and a plastic film substrate, or a wiring substrate can be used. The plurality of pixel regions 102 on the light-emitting region of the substrate 121 are arranged in a matrix, and in the case of color display, for example, the pixel regions 102 corresponding to the respective colors of red, green, and blue are arranged in a predetermined arrangement. The pixel electrode 141 is disposed in each of the pixel regions 102, and a signal line 1 3 2 'common power supply line 133, a scanning line 133, and other pixel electrode scanning lines having no pattern are disposed in the vicinity thereof. The planar shape of the pixel region 102 may be other shapes such as a circle or an oblong shape in addition to the rectangular shape shown. For example, when a charge transport layer constituting a light-emitting layer, a hole transport layer, and an electron transport layer of an organic EL element is formed by a liquid phase process such as an inkjet method, in order to uniformly form the layer above the pixel electrode, it is preferably a circle without a corner. A pixel electrode having a shape or a shape such as an oblong shape is preferable. -17- (14) 1259575 戈衣衣p卩147 prevents water or oxygen from intruding and prevents oxidation of the cathode 154 or the organic EL element 140, including the encapsulating resin applied to the substrate ι21 and being bonded to the substrate. A package substrate (square can) 148 or the like on 121. As the material of the encapsulating resin, for example, a thermosetting resin or an ultraviolet curing resin can be used, and an epoxy resin which is one of hardening resins is particularly preferable. The package substrate 148 is made of glass or metal. The substrate 1 2 1 and the package substrate 148 are adhered by a sealant. A desiccant is disposed on the inner side of the substrate 1 2 1 , and a space formed therebetween forms an N 2 gas filling layer 49 filled with N 2 gas. Fig. 3 is a view showing the circuit configuration of the device 1. In FIG. 3, a plurality of scanning lines 131 are disposed on the substrate 121, and a plurality of signal lines 132 extending in a direction intersecting the scanning lines 133, and a plurality of lines extending side by side with the signal lines 133 Wire 1 3 3. The pixel area 1 〇 2 is formed corresponding to each intersection of the scanning line 1 31 and the signal line 1 32. The signal line 1 32 is connected to a data side drive circuit 103 having, for example, a shift register, a level shifter, a video line, and an analog switch. The scanning line 133 is connected to the scanning side driving circuit 104 having a shift register and a level shifter. The pixel region 102 is provided with a first TFT 142 through which the scanning signal is supplied to the gate via the scanning line 131. The TFT 142 holds the holding capacity 145 of the image signal supplied from the signal line 132; when the image signal held by the holding capacity 145 is electrically connected to the common power supply line 133 by the second TFT 143 for driving the supply of the gate, The common power supply line 133 flows into the pixel electrode 141 (anode) of the drive current, and the organic EL element 140 sandwiched between the pixel electrode 141 and the counter electrode 154 (cathode). -18- (15) 1259575 The organic EL device 140 is a layer (functional film) of an organic EL material containing a photovoltaic material, and the organic EL device is composed of a pixel electrode 14 1 , a cathode 154 , an organic EL device 140, and the like. In the pixel region 102, when the scanning line 13 1 is driven and the first TFT 142 is turned on, the potential of the signal line 132 is maintained at the holding capacity 145, and the conduction of the second TFT 143 is determined in accordance with the state of the holding capacity 145. status. The amount of current in accordance with the on state of the converter TFT 1 43 is supplied to the organic EL element 1400 via the common power supply line 13 3 . The luminous intensity of the organic EL element 140 is determined in accordance with the amount of current supplied at this time. When the emitted light (top emission type) is taken out from the opposite side to the substrate 2 on which the TFT 22 is provided, the substrate 2 may be opaque. In this case, it can be used for a metal sheet such as ceramics such as aluminum oxide or stainless steel. An insulating treatment such as surface oxidation or the like, a thermosetting resin, a thermoplastic resin or the like is applied thereto. 4(a) and 4(b) are schematic diagrams showing the cross-sectional structure of the pixel region 102 of the organic EL device, wherein (a) is a tip end type and (b) is a back side type. In Fig. 4 (a), the top emission type organic EL device has a configuration in which the light emitted from the organic EL element 140 is radiated from the other side of the substrate 121 on which the TFT 143 is provided. It can therefore be transparent or opaque. The opaque substrate may be an insulating treatment such as surface oxidation or the like on a ceramic such as alumina or a metal plate such as stainless steel, and the like may be a thermosetting resin or a thermoplastic resin. The pixel electrode 丨4 1 is preferably formed of a reflective film such as a metal film. In Figs. 4(a) and (b), in this example, the pixel electrode 141 is used as the anode and the counter electrode 154 is used as the cathode, but the anode is interchangeable with the cathode -19-(16) 1259575. In the back emission type organic EL device of Fig. 4 (b), the light emitted from the organic EL element 140 is radiated from the side of the substrate 121 on which the TFT 143 is provided. Therefore, the substrate 121 can use a transparent or opaque substrate. For the transparent or opaque substrate, for example, a glass substrate, a quartz substrate, a resin substrate (plastic substrate, plastic film substrate), or the like can be used, and it is particularly preferable to use inexpensive soda lime glass. When soda-lime glass is used, the cerium oxide is coated on the glass to protect the soda-lime glass which is less resistant to weak alkali, and also has an effect of improving the flatness of the substrate. A filter film or a color conversion film ‘or a dielectric reflection film containing a luminescent substance is disposed on the substrate to control the wavelength of the emitted light. Symbol 281 is a partition member (arrangement) provided at the interface of the pixel region 102. The partition member 281 has a function of preventing the materials of the adjacent organic EL elements 140 from being mixed with each other or the like when the organic EL element 140 is formed. The partition member 281 of this figure has a conical structure whose top side length is smaller than the bottom side, but may also have a structure in which the top side length is greater than or equal to the bottom side. The back-radiation type organic EL device is configured by the light-emitting light of the radiation-emitting layer on the substrate 1 211 side of the TFT 143. Therefore, the light emission efficiency is improved, and the TFT 143 is prevented from being disposed directly under the organic EL element 140, and the TFT 143 can be disposed. It is disposed under the partition member 281. Fig. 5 is a view showing an example of a configuration of a planar structure of the partition member 281. The partition member 281 is located at the interface of the plurality of pixel regions 1 〇 2, corresponds to the arrangement of the plurality of pixel regions 110, and has an opening. In Fig. 5(a), the partition member 28 1 is arranged in a lattice shape corresponding to a plurality of pixel regions 102 of -20-(17) 1259575 arranged in a matrix. The spacer member 281 in Fig. 5(b) is provided in a strip shape corresponding to a plurality of pixel regions 1 0 2 arranged in a long strip shape. In this example, the partition member 281 is composed of a lattice-like planar structure as shown in Fig. 5(a). The arrangement of the pixel regions 102 and the planar shape of the partition member 281 are not limited to these shapes, and may be, for example, a shape of a pixel region of a so-called five arrangement in which the arrangement of each row is shifted. The shape of the partition member 281 can also be determined in accordance with the shape of the pixel electrode 154 shown in Fig. 2 . For example, when the pixel electrode has a shape without a corner or a long circle, the partition member 281 may have a shape without a corner. Fig. 6 is an enlarged sectional view showing the structure of the top-radiation type organic EL device. In Fig. 6, the organic EL device has a substrate 121; a pixel electrode 141 (anode) composed of a transparent electrode material such as indium tin oxide (ITO); and a hole transport layer capable of transmitting a hole by the pixel electrode 14 1 2 8 5 ; a light-emitting layer 286 (organic EL layer) of an organic EL material containing one of the photoelectric substances; an electron transport layer 287 disposed on the upper surface of the light-emitting layer 286; and a cathode 154 disposed on the upper surface of the electron transport layer 287 (opposite) Electrode); TFT 142 and TFT 143 formed on the substrate 121. The cathode 154 covers the entire element and is paired with the pixel electrode 141, and has a function of injecting electrons into the organic EL element 140. This cathode 154 can be a single layer structure or a multilayer structure. The material for forming the cathode 154 is, for example, aluminum (A1), magnesium (Mg), gold (A u ), silver (A g ), calcium (ca), lithium fluoride or the like. These materials may be used singly or as a laminate film or alloy of these monomer materials. -21 - (18) 1259575 TFT142 and TFT143 In this example, both form an n-channel type. Both of the TFT 142 and the TFT 143 are not limited to forming an n-channel type TFT, and a P-channel type TFT can also be used for either or both of them. The TFT 142 and the TFT 143 are provided on the surface of the substrate 121 via the underlying protective layer 201 mainly composed of Si 〇 2, and the semiconductor films 204 and 205 formed of ruthenium or the like formed by the upper layer of the underlying protective layer 201; the semiconductor film 204 is covered, 205, and is disposed on the gate insulating film 220 of the upper layer of the underlying protective layer 201; above the gate insulating layer 220, wherein the gate electrodes 229, 230 are disposed opposite to the semiconductor films 204, 205; the gate electrode 229 is covered, And a first interlayer insulating layer 250 disposed on the upper layer of the gate insulating film 220; and a source connected to the semiconductor films 204 and 205 via via holes penetrating through the gate insulating film 220 and the first interlayer insulating film 250; The electrodes 262 and 263 are disposed opposite to the source electrodes 262 and 263, and pass through the vias through the gate insulating layer 220 and the opening of the first interlayer insulating film 25 0, and the semiconductor. The drain electrodes 2 65 and 2 66 to which the films 204 and 205 are connected are provided, and the second interlayer insulating film 270 which covers the source electrodes 262 and 263 and the drain electrodes 265 and 266 is provided on the first interlayer insulating film 250. In the case of the top emission type, the second interlayer insulating film 270 is preferably a flat film. Thereby, the disordered reflection of light can be suppressed. The pixel electrode 141 is disposed on the upper surface of the second interlayer insulating film 270, and the pixel electrode 141 and the drain electrode 266 are connected via a via hole 275 provided in the second interlayer insulating film 270. When the materials of the first interlayer insulating film 250 and the second interlayer insulating film 270 are different from each other, the through holes and the -22-(19) 1259575 are placed in the second interlayer insulation as shown in the figure. The via holes 27 5 of the film 270 do not overlap each other in the preferred semiconductor films 204 and 205, next to the gate insulating film 220, and the regions overlapping the gate electrodes 229 and 230 are the channel regions 246 and 247. In the semiconductor films 204, 205, the source regions 2 3 3, 23 6 are disposed on the source sides of the channel regions 246, 247, and the drain regions 2 34, 23 5 are disposed on the drain sides of the channel regions 246, 247. The source regions 233 and 236 are connected to the source electrodes 262 and 263 via via holes penetrating the openings of the gate insulating film 220 and the first interlayer insulating film 250. The drain regions 234 and 235 are via holes penetrating through the openings of the gate insulating film 208 and the first interlayer insulating film 250, and are connected to the drain electrodes 265 and 266 formed in the same layer as the source electrodes 262 and 263. The pixel electrode 141 is connected to the drain electrode region 2 3 5 of the semiconductor film 205 via the drain electrode 266. A surface of the second interlayer insulating film 270 is formed as a third insulating layer spacer member 28 1 between a portion other than the organic EL device and the cathode 1 54 and a low dielectric material such as the above-described cerium oxide aerosol. The partition member 281 is formed of a low dielectric material, so that the parasitic capacity can be suppressed. A barrier layer 271 made of tantalum nitride, hafnium oxynitride, or titanium nitride, nitrided or the like may be disposed between the partition member 281 and the second interlayer insulating film 270. This barrier layer 271 has a function of preventing metal (for example, movable ions) passing through the partition member 281 from intruding into the TFT 142 and the TFT 143. The side surface and the upper surface of the partition member 28 1 are covered with a protective film 272 composed of an inorganic polymer or an organic polymer or the like. The protective film 27 2 prevents substances such as liquid or gas or metal from intruding into the partition member 281. With this protection -23-(20) 1259575 film 272 can suppress the diffusion of substances through the partition member 281. In the partition member 281, the area covered with the protective film 272 is not limited to the one shown, for example, the entire surface of the partition member 281 may be covered by the protective film 272. Next, an embodiment of a method for manufacturing a photovoltaic device according to the present invention (including a method of manufacturing a wiring substrate) for manufacturing a display device including the above-described organic EL device will be described with reference to Figs. Here, a description will be given of a step of manufacturing an organic EL device including the TFT 142 and the TFT 143 described above and simultaneously manufacturing TFTs for N-type and P-type driving circuits. As shown in Fig. 7 (a), for the substrate 1 2 1 , if necessary, TE 〇 S (tetraethoxy decane) or oxygen gas may be used as a raw material to form an oxide having a thickness of about 200 to 500 nm by a plasma CVD method. The underlying protective layer 20 1 composed of a ruthenium film. In addition to the hafnium oxide film, an underlying protective layer of a tantalum nitride film or a hafnium oxide nitride film may be provided. Next, the temperature of the substrate 121 is set to about 350 Å, and a semiconductor film 200 composed of an amorphous germanium film having a thickness of about 30 to 70 nm is formed on the surface of the underlying protective layer by a plasma CVD method or an ICVD method. The semiconductor film 200 is not limited to an amorphous sand film, and may be a semiconductor film having an amorphous structure such as a microcrystalline semiconductor film. A compound semiconductor film containing an amorphous structure such as an amorphous germanium film may also be used. Next, the semiconductor film 200 is subjected to a crystallization step such as laser annealing or rapid heating (lamp annealing or thermal annealing) to convert the semiconductor film 200 into a polycrystalline germanium film. The laser annealing method uses, for example, a quasi-molecular laser beam having a beam length of 4 mm and an output intensity of, for example, 200 ml/cm2. You can also use the 2nd harmonic of the Yag laser or the 3rd highest -24- (21) 1259575 harmonic. For a portion corresponding to 90% of the peak intensity of the laser beam in the short direction of the straight beam, a straight beam is scanned to superimpose each region. Next, as shown in Fig. 7 (b), an unnecessary portion of the semiconductor film (polysilicon film) 200 is removed by patterning using a lithography method or the like to form an island-shaped semiconductor film 202 corresponding to each of the formation regions of the TFT. 203, 204, 205 〇 Next, a semiconductor film 200 is formed by plasma CVD using TEOS or an oxygen gas as a raw material to cover a yttrium oxide film or a tantalum nitride film (yttrium oxide nitride film) having a thickness of about 60 to 150 nm. The gate insulating film 220 is formed. The gate insulating film 220 may be a single layer structure or a multilayer structure. It is not limited to the plasma CVD method, and other methods such as thermal oxidation may be used. When the gate insulating film 220 is formed by the thermal oxidation method, the semiconductor film 200 is also crystallized, and these semiconductor films can be converted into a polycrystalline germanium film. As shown in Fig. 7 (c), the gate insulating film 220 is formed with a conductive film 221 for forming a gate electrode doped with yttrium, yttrium oxide or a metal such as aluminum, giant, molybdenum, titanium or tungsten. The surface of the conductive film 221 is formed with a mask 222 for patterning, and a pattern is formed in this state. As shown in Fig. 7 (d), the electrode 2 2 3 is formed on the side of the transistor for forming a P-type driving circuit. At this time, the N-type pixel electrode transistor and the N-type drive circuit transistor are on the side, and the gate electrode formation conductive film 221 is covered with the pattern mask 222, so that the gate electrode formation conductive film 221 is not formed. pattern. The gate electrode may be a single layer of a conductive film or a laminated structure.

As shown in Fig. 7(e), the region formed by the gate electrode 223 of the p-type driver circuit transistor and the N-type pixel electrode transistor and the driving circuit of the N-25-(22) 1259575 type are shown. The gate electrode forming conductive film 221 in the region formed by the transistor is used as a photomask, and a p-type impurity element (in this example, boron) ions is implanted. The amount of the dopant is, for example, about lx 1015 cm·2. As a result, on the gate electrode 223, the source/drain regions 224 and 225 having a high concentration of impurities such as 1 X 1 020 cm 2 are formed by themselves. The portion covered with the gate electrode 223 and not introduced with impurities becomes the channel region 226. As shown in FIG. 8(a), the side of the transistor for completely covering the P-type driving circuit is formed, and the gate electrode forming region on the side of the N-type pixel electrode TFT 10 and the N-type driving circuit transistor is formed. A mask 227 for pattern formed by a photoresist mask or the like. As shown in FIG. 8(b), the pattern electrode mask 227 is used to form the gate electrode formation conductive film 221, and an N-type pixel electrode transistor and an N-type driver circuit transistor gate electrode 228 are formed. 229, 230. Next, the pattern mask 227 is left to inject an n-type impurity element (in this example, phosphorus) ions. The doping amount is, for example, lx 101 5 cm 2 . As a result, the impurities are self-aligned and introduced into the pattern mask 227, and high-concentration source/drain regions 231, 23 2, 23 3, 234, 2 3 5, and 236 are formed in the semiconductor films 20 3 , 204 , and 205 . Among the semiconductor films 203, 204, and 205, a region where high concentration of phosphorus is not introduced is larger than a region covered by the gate electrodes 228, 229, and 230. In other words, in the semiconductor films 203, 204, and 205, both sides of the region on the opposite side to the gate electrodes 228, 229, and 230 and the high-concentration source/drain regions 231, 23 2, 2 3 3, 234, 2 3 5, 236 A region where a high concentration of phosphorus is not introduced (a source/drain region of a low concentration to be described later) is formed between them. Next, the pattern mask 227 is removed, and in this state, an n-type impurity element -26-(23) 1259575 (in this case, a phosphorus) ion is implanted. The doping amount is, for example, lx 1013 cm·2. As a result, as shown in FIG. 8(c), in the semiconductor films 203, 204, and 205, the gate electrodes 228, 229, and 230 are introduced with low-concentration impurities, and self-integrated to form low-concentration source/drain regions 237, 238, and 239. 240' 241, 242. The region overlapping the gate electrodes 228, 229, and 230 is not introduced with impurities, and the channel regions 245, 246, and 247 are formed. As shown in FIG. 8(d), the surface of the gate electrodes 228, 229, and 230 forms the first interlayer insulating layer 250. A pattern is formed by a lithography method or the like, and a through hole is formed at a predetermined source electrode position and a drain electrode position. As the first interlayer insulating layer 250, an insulating film containing germanium such as a hafnium oxide nitride film or a hafnium oxide film can be used. It can be a single layer or a laminated film. In an atmosphere containing hydrogen, heat treatment is performed to cause unpaired bonding of the semiconductor film to generate a hydrogen terminal (hydrogenation). Hydrogenation with a hydrogen-excited hydrogen can also be used. Next, a conductive film 25 1 serving as a source electrode and a drain electrode is formed using a metal film such as an aluminum film, a chromium film or a giant film. The thickness of the conductive film 25 1 is, for example, 200 nm to 300 nm. The conductive film may be a single layer or a laminated film. Then, a pattern mask 252 is formed at the position of the source electrode and the drain electrode, and patterned at the same time to form source electrodes 260, 261, 262, and 263 and drain electrodes 264, 265, and 266 as shown in FIG. 8(e). As shown in Fig. 9 (a), a second interlayer insulating film 270 made of tantalum nitride is formed. The thickness of the second interlayer insulating film 270 is, for example, 1 to 2 μm. As the material for forming the second interlayer insulating film 270, for example, a light-permeable material such as an oxidized sand film or an organic resin can be used. As the organic resin, for example, acrylic acid, polyimine, polyamine, BCB (benzocyclobutene) polymer or the like can be used. -27-(24) 1259575 The second interlayer insulating film 270 is removed by etching as shown in Fig. 9(b) to form a via hole 275 which can reach the drain electrode 266. As shown in FIG. 9(c), for example, a film made of a transparent electrode material of Si〇2, Zn〇 or polyaniline formed of ITO or fluorine-doped is formed, and is buried in the through hole 275 to form electricity. The pixel electrodes 141 of the source/drain regions 235 and 236 are connected. This pixel electrode 141 serves as an anode of the organic EL element. As shown in FIG. 10(a), a barrier layer 271 is formed. The position at which the barrier layer 271 is formed is a position where the spacer member 281 is formed later, and is adjacent to the pixel electrode 141 of the second interlayer insulating film 270. As the material of the barrier layer 271, for example, silicon nitride, cerium oxide oxide, tantalum nitride, molybdenum nitride or the like can be used. The method of forming the barrier layer 27 1 can be appropriately selected, and for example, a C VD method, a coating method, a sputtering method, a vapor deposition method, or the like can be used. The barrier layer 271 is formed, for example, on the entire surface of the second interlayer insulating film 270 and the pixel electrode 141, and then the material film can be patterned by lithography or the like. The opening portion of the barrier layer 271 is disposed at a position where the pixel electrode 141 is formed. A portion of the barrier layer 271 may overlap with a peripheral portion of the pixel electrode 141. As shown in Fig. 9 (b), a partition member 28 1 is formed on the barrier layer 27 1 using a low dielectric material such as cerium oxide aerosol or porous cerium oxide. For example, when a cerium oxide aerosol is used, a step of producing a wet gel by a sol-gel method as described above; a step of curing the wet gel; and a supercritical drying step of drying the wet gel by a supercritical drying method to obtain an aerosol, A layer of cerium oxide aerosol is formed on the substrate 1 21, and then a pattern is formed by etching or honing to obtain a partition member 28 1 of a predetermined shape. The pattern is formed such that the bottom surface of the partition member 281 is preferably in the barrier layer 271. -28-(25) 1259575 As shown in Fig. 10 (c), a protective film 272 is formed using a material such as an inorganic polymer or an organic polymer. At this time, the protective film 272 is formed, and the protective film 27 2 covers the side surface and the upper surface of the partition member 281. The protective film 272 may be formed by merely patterning the entire surface of the partition member 28 1 or the element, and then patterning by a lithography method or the like. By this, the protective film 272 can reinforce the mechanical properties of the partition member 281, and at the same time, it can prevent the substance from intruding into the partition member 281 in the subsequent steps. When the bottom surface of the partition member 281 is narrower than the barrier layer 27 1 , the wall surface of the partition member 28 1 is entirely covered by the protective film 272 and the barrier layer 271, and the substance is prevented from intruding into the partition member 281 or diffusing through the partition member 28 1 . Next, when a liquid material such as a material for forming a hole transport layer is disposed at an opening position of the partition member 28 1 , a material having liquid repellency or lyophilic property to the liquid material may be used for the protective film 272 . The surface treatment of plasma treatment or the like has a desired affinity for the liquid material. By suppressing the affinity of the protective film to the liquid material, the liquid material can be easily disposed, or the flatness of the film formed by the material can be improved. As shown in Fig. 11 (a), a hole transport layer 285 is formed to cover the pixel electrode 141. The hole transport layer 285 is formed by ejecting droplets using an ink jet device to eject the formation material onto the pixel electrode 141. Then, drying treatment and heat treatment are performed to form a hole transport layer 285 on the pixel electrode 141. The formation of the layer by the ink jet method is performed, for example, by disposing the discharge nozzle Η 1 of the ink jet head toward the pixel electrode 141, and discharging the material from the nozzle Η1. The pixel electrode 141 is formed around the pixel electrode 141, and the material of the liquid amount of each droplet of the nozzle Η1 is discharged onto the pixel electrode 141 by the nozzle Η1 and the substrate 221 in a relative movement state. -29- (26) 1259575 The ejection technology of the inkjet method includes, for example, a charging control method, a pressurized vibration method, an electromechanical conversion method, an electrothermal conversion method, and an electrostatic attraction method. The electrostatic control method uses a charged electrode to impart a charge to the material to deflect the direction of travel of the electrode control material and then spit out from the nozzle. The pressure vibration method is applied to the material at a super-pressure of 30 kg/cm, and the material is discharged from the tip end side of the nozzle. When no control voltage is applied, the material is discharged straight from the nozzle, and when a control voltage is applied, "electrostatic repulsion occurs between the materials, and the material is not scattered. Spit out from the nozzle. The electromechanical conversion method uses a piezoelectric element to receive a characteristic of deformation of a pulsed electrical signal, and the deformation of the piezoelectric element applies pressure to the space of the 3 storable material via the flexible material, thereby ejecting the material from the space and spitting it out from the nozzle. . The electrothermal conversion method uses a heater set in a space of a storage material to rapidly vaporize a material to generate bubbles, and discharges the material in the space by the pressure of the bubbles. The electrostatic attraction method applies a small pressure to the space of the storage material to form a meniscus of the material on the nozzle, and electrostatic attraction is applied to take out the material in this state. Other techniques such as a method of causing a viscous change of a fluid by an electric field or a method of generating a scattering by a discharge spark may be used. When the droplets are ejected to form the hole transport layer 285 or the light-emitting layer 286 and the electron transport layer 287 described later, the surface of the pixel electrode 41 is subjected to lyophilic treatment using a plasma treatment or the like, and the surface of the partition member 281 (protective film) The 272 surface) is preferably liquefied. The step of forming the hole transport layer is preferably a waterless and oxygen-free atmosphere in the following steps. For example, it can be carried out under an inert gas atmosphere such as a nitrogen atmosphere or an argon atmosphere. The material for forming the hole transport layer 285 is not particularly limited, and known -30-(27) 1259575 can be used, for example, a pyrazoline derivative, an arylamine derivative, an anthracene derivative, or a triphenylenediamine derivative. Wait. Specifically, for example, Japanese Laid-Open Patent Publication No. SHO-63-75-257, No. 63-175860, JP-A No. 2-135359, JP-A-2-135 It is preferable to use a triphenylenediamine derivative, preferably 4,4,-bis (N(3), as described in Japanese Laid-Open Patent Publication No. Hei. No. Hei. No. Hei. -Methylphenyl)-N-phenylamino)biphenyl. A hole injection layer may be formed instead of the hole transport layer, and a hole injection layer and a hole transport layer may be formed. At this time, a material for forming the hole injection layer can be, for example, copper phthalocyanine (CuPc) or polytetrahydrophenylthiophenyl polystyrene, 1,1-bis(4-N,N-dimethylphenylamine phenyl group). As the cyclohexane, tris(8-hydroxyquinolol) aluminum or the like, copper phthalocyanine (CuPc) is particularly preferably used. When both the hole injection layer and the hole transport layer are formed, for example, a hole injection layer is formed on the pixel electrode side before forming the hole transport layer, and a hole transport layer is preferably formed thereon. By forming the hole injection layer and the hole transport layer in this manner, the increase in the driving voltage can be suppressed, and the driving life (half the period) can be extended. A light-emitting layer 286 is formed on the hole transport layer 285 as shown in Fig. 11(b). The formation step of the light-emitting layer 286 is the same as that of the hole transport layer 285, and the formation material is ejected onto the pixel electrode 14 4 using, for example, an ink-jet device discharge droplet. Then, drying treatment and heat treatment are performed to form a light-emitting layer 286 corresponding to each of the blue, red, and green colors in a predetermined row when the light-emitting layer 286 ° color corresponding is formed on the pixel electrode 14 1 . The material for forming the light-emitting layer 2 8 6 is not particularly limited, and a low-molecular organic light-emitting pigment or a polymer light-emitting body can be used. In other words, a light-emitting substance composed of various light-emitting materials or fluorescent materials can be used. . It is particularly preferable that the conjugated polymer of the luminescent substance contains a aryl vinyl structure. As the low molecular light-emitting body, for example, a pigment such as a naphthalene derivative, an anthracene derivative, an anthracene derivative, a polymethine, a xanthene, a coumarin, or a cyanine, or a hydroxyquinoline or a derivative thereof can be used. A metal complex, an aromatic amine, a tetraphenylcyclopentadiene derivative, or the like, or a known product described in Japanese Laid-Open Patent Publication No. Hei. No. Hei. No. 5-7-51, No. 59-119393. As shown in FIG. 11(c), an electron transport layer 287 is formed on the light-emitting layer 286. The electron transport layer 287 is formed in the same manner as the hole transport layer 285 and the light-emitting layer 286. The liquid droplets are ejected by, for example, an ink jet device, and the forming material is discharged onto the pixel electrode 141. Then, drying treatment and heat treatment are performed to form an electron transport layer 287 on the pixel electrode 141. The material for forming the electron transport layer 287 is not particularly limited, and examples thereof include a dioxin derivative, decyl dimethane and a derivative thereof, benzoquinone and a derivative thereof, naphthoquinone and a derivative thereof, an anthracene and a derivative thereof, Metal complexation of tetracyanomethyl dimethyl ketone and its derivatives, anthracene derivatives, diphenyldicyanoethylene and its derivatives, bis-quinone derivatives, 8-hydroxyquinolol and its derivatives Things and so on. Specifically, it is the same as the material for forming the previous hole transport layer, and for example, Japanese Laid-Open Patent Publication No. SHO63-70257, No. 63-1750860, Japanese Patent Publication No. Hei 2-13 5 3 59, and JP-A No. 2 In particular, 2-(4-biphenyl) is particularly preferred in the Japanese Patent Publication No. Hei. No. Hei. No. Hei. No. Hei. (4_T-butylphenyl)-1,3,4-dioxazole, benzoquinone, anthracene, tris(8^quinolinol) aluminum. -32- (29) 1259575 The formation of the slurry hole transport layer 285 or the formation of the electron transport layer 2 87 The material is mixed with the material forming the light-emitting layer 286, and can also be used as a light-emitting layer material. In this case, the amount of the material for forming the hole transport layer or the material for forming the electron transport layer varies depending on the type of the compound to be used, etc., but may be within a range that does not affect the sufficient film formability and light-emitting property. The amount of use is appropriately determined. Usually, when the material for forming the light-emitting layer is used, it is used in an amount of 1 to 40% by weight, more preferably 2 to 30% by weight. As shown in Fig. 11 (d), a long cathode 154 (opposing electrode) is formed on the entire surface of the substrate 121. The cathode 154 is a single layer structure or a laminated structure of a monomer material of Al, Mg, Li, Ca or the like. Or a single layer structure of an alloy material of Mg: Ag (10:1 alloy) or a laminated structure composed of an alloy material. Specifically, for example, a laminated film of Li 2 〇 (0.5 nm ) / A1 or LiF (0.5 nm) / Al, MgF 2 / Al is used. For example, a material having a lower success function close to the side of the light-emitting layer is preferable, and for example, Ca, Ba, or the like may be used, and a thin layer of LiF may be preferably formed in the lower layer depending on the material. A material with a higher work function, such as A1, can be used on the upper side (package side). The cathode 154 can be formed, for example, by a vapor deposition method, a sputtering method, a CVD method, or the like, and is formed by a vapor deposition method to prevent damage to the light-emitting layer 286 due to heat. An A1 film, an Ag film, or the like formed by a vapor deposition method, a sputtering method, a CVD method, or the like is preferably used for the upper portion of the cathode 154. The thickness thereof is, for example, 100 to 100 nm, more preferably 200 to 500 nm. A protective film of Si〇2, SiN or the like may be provided on the cathode 154 to prevent oxidation. The TFT for the organic EL device and the N-type and P-type driving circuits is completed by the above steps. Then, the substrate 1 21 and the package substrate 1 46 (see Fig. 6) were formed by encapsulating an organic EL device. The encapsulating step is preferably carried out in an inert gas atmosphere of nitrogen, argon, ammonia or the like. When it is sealed in the atmosphere, if a defect such as a pinhole is generated in the cathode 154, water, oxygen, or the like may intrude into the cathode 154 due to the defective portion, and the cathode 154 may be oxidized. The cathode 154 is connected to the wiring of the substrate 121, and the wiring of the circuit element portion 146 (see FIG. 6) and the driving 1C (driving circuit) provided on the substrate 1 21 or the outside can be used to obtain the display device 100 of the present embodiment. . Fig. 12 is a view showing another example of the organic EL device. The organic EL device shown in Fig. 12 differs from the above-described example in that it has an encapsulation layer (at least one of the first encapsulation layer 300, the second encapsulation layer 301, and the third encapsulation layer 302) that blocks gas or metal ions from entering. The first encapsulation layer 300 is interposed between the first interlayer insulating film 250 and the second interlayer insulating film 270, and covers the source electrodes 262 and 263 and the drain electrodes 265 and 266. The thickness is, for example, 50 to 5 nm. As the material constituting the first encapsulating layer 300, for example, a material such as ceramic or tantalum nitride, niobium oxynitride or hafnium oxide can be used. The first encapsulating layer 300 prevents moisture or intrusion of the alkali metal (sodium) such as the light-emitting layer 286 (EL layer) into the TFT 142 or the TFT 143. As the material constituting the first encapsulating layer 300, for example, a material having the above-described alkali metal encapsulating effect and heat releasing effect can be used. Such a material has, for example, an element containing at least one selected from the group consisting of B (boron), C (carbon), and N (nitrogen), and at least one selected from the group consisting of A1 (aluminum), Si (bismuth), and P (phosphorus). An insulating film of one type of element. For example, a nitride of aluminum, a carbide of ruthenium, a nitride of boron, a phosphide of boron, or the like can be used. An insulating film containing Si, Al, N, yttrium, and μ may also be used (but yttrium is at least one of rare earth elements, and more preferably -34-(31) 1259575

At least 1 of Ce (钸), Yb (mirror), Sm (钐), Er (bait), Y (钇), La (镧), Gd (釓), D y (镝), N d (ammonium) Elements). The second encapsulating layer 301 is formed between the second interlayer insulating film 270 and the pixel electrode 141, and has a film thickness of, for example, 50 to 500 nm. As the material constituting the second encapsulating layer 301, for example, a material such as ceramic or tantalum nitride, niobium oxynitride, or cerium oxide can be used. The second encapsulating layer 301 prevents the entry of the alkali metal (sodium) such as the light-emitting layer 286 CEL layer into the TFT 142 or the TFT 143. For the material constituting the second encapsulating layer 301, for example, a material used for the first encapsulating layer can be used. The encapsulating effect and the heat releasing effect of the above alkali metal are also obtained. 上述 The formation of the second encapsulating layer 301 can omit the above-mentioned barrier layer 271. The third encapsulation layer 302 covers the cathode 154, and has a film thickness of, for example, 50 to 500 nm. As the material constituting the third encapsulating layer 302, for example, ceramic or a material such as tantalum nitride, niobium oxynitride, or cerium oxide can be used. The third encapsulating layer 3 0 2 prevents external moisture from entering. As the material constituting the third encapsulating layer 306, for example, a material used for the first encapsulating layer can be used. It also has the above-mentioned alkali metal encapsulation effect and heat release effect. The organic EL device of Fig. 18 is a top radiating type, and the third encapsulating layer 302 is preferably formed of a material and a thickness which is excellent in light penetration. Instead of the above encapsulation layer, a low refractive index layer which enhances light emission efficiency may be additionally formed. The low refractive index layer is a layer having a light transmittance lower than that of the substrate 1 21, and is composed, for example, of the above-described cerium oxide aerosol. The refractive index of the material of the substrate 1 2 1 is 1. 5 4, the folding of the quartz glass -35- (32) 1259575 The transmittance is 1.45. As the low refractive index layer, other materials such as a porous SiCh film or a polymer can be used. A desiccant or a chemical adsorbent may be dispersed in the material constituting the low refractive index layer. Thereby, the encapsulation effect can be imparted to the low refractive index layer. Fig. 1 is a view showing another example of the organic EL device. In each of the above examples, the switching TFT 142 has a so-called single gate structure, but the present invention is not limited thereto. In other words, as shown in FIG. 13 , a double gate structure in which two gate electrodes 3 1 0 and 3 1 1 are electrically connected by a gate line not shown, or a multi-gate structure such as a three-gate structure (including a straight connection) The structure of a semiconductor film of two or more regions). The multi-gate structure reduces the off current 値 and contributes to the enlargement of the screen. Fig. 14 (a) and (b) show other examples of the circuit of the organic EL display device. The circuit shown in Figure 1 4 (a) and (b) controls the current flow to control the energization of the E L element, a so-called current-program circuit. Figure 1 4 (a) uses a so-called current mirror circuit. With this circuit, a certain conduction state of the EL element can be maintained, and the EL layer can be stably illuminated. A display device that contributes to a large screen. When a polymer light-emitting material is used as the material for forming the light-emitting layer 60, a polymer having a side chain having a light-emitting group may be used, and it is preferable to have a conjugated structure in the main chain, and particularly preferably a polythiophene, a poly-p-aryl group, and a polycondensation. Aryl extended vinyl, polyfluorene and its derivatives. Among them, a poly(aryl) vinyl group and a derivative thereof are preferred. The poly(aryl)vinylene group and the derivative thereof are preferably those having a repeating unit of the following formula (1) in an amount of 50 mol% or more of the total repeating unit. -36- (33) 1259575 Depending on the structure of the repeating unit, the repeating unit shown in the chemical formula (1) is more preferably 70% or more of the total repeating unit. -Ar-CR = CR, - (1) (wherein Ar is an exoaryl or heterocyclic compound group, and R and R are each independently selected from hydrogen, an organic group having 1 to 20 carbon atoms, a perfluoroalkyl group, The group in which the amine group is grouped) The polymer light-emitting material may further contain a repeating unit other than the repeating unit represented by the chemical formula (1), for example, an aromatic compound or a derivative thereof, a heterocyclic compound group or a derivative thereof And the basis of these combinations. The repeating unit represented by the chemical formula (1) or other repeating unit may have a non-conjugated unit linkage of an ether group, an ester group, a decylamino group, a quinone imine group or the like, or a repeat unit containing these non-conjugated portions. . The polyarylvinyl group is, for example, PPV (poly(p-styryl)), M〇-PPV (poly(2,5-dimethoxy-1'-heart styrene)) represented by the formula (2). , CN-PPV (poly(2,5-bishexyloxy-1,4-phenylene (1-cyanovinyl))), MEH-PPV (poly[2-methoxy-5-() A PPV derivative such as 2'-ethoxyhexyl)]p-styryl). -37- (34)1259575

Ηΐ3〇6〇 0〇6^13

CN OCaHia OCaHia 〇N-PPV

-38- (35) 1259575 In addition to the above materials, for example, poly(p-phenylene), polyalkylhydrazine, etc., are preferably a polyalkylhydrazine represented by the chemical formula (3) (specifically, as shown in the chemical formula (4) Polyalkyl fluorene copolymer). -39- (36)1259575

PAF

-40- (37)1259575

-s 41 (38) 1259575 The above polymer light-emitting material is preferably a random, block or graft copolymer or a polymer having an intermediate structure of these, for example, a random copolymer having a block property. From the viewpoint of obtaining a polymer light-emitting material having a higher quantum yield of luminescence, a random copolymer having a block property or a block or graft copolymer is preferable to a random copolymer. The EL element formed here is formed by the light emission of the film. Therefore, the polymer light-emitting material can be used in a solid state and has a good luminescence quantum yield. Among the above materials, a material having a good solubility in a liquid material or a desired solvent at a temperature at which the light-emitting layer is formed can be used to form a light-emitting layer using a liquid material such as an inkjet method. The solvent is, for example, chloroform, methylene chloride, dichloroethane, tetrahydrofuranyl, toluene or xylene. Although it varies depending on the structure or molecular weight of the polymer light-emitting material, it is usually soluble in 0.1% by weight or more in these solvents. The molecular weight of the polymer light-emitting material is preferably from 1 to 3 to 107 in terms of polystyrene, and an oligomer having a molecular weight of 103 or less can also be used. The desired polymer luminescent material can be obtained by a synthesis method in combination with a desired polymer luminescent material. For example, there is a Wittig reaction of a diquaternary salt obtained from a aryl group and a two aldehyde group-bonded β-dialdehyde compound, a compound having an extended aryl group and two halogenated methyl groups, and triphenylphosphine. Other synthetic methods are, for example, the dehydrohalogenation method of a compound in which a aryl group S and two halogenated methyl groups are bonded. Further, an intermediate obtained by hydrating a sulfonium salt of a compound in which a aryl group is bonded to two halogenated methyl groups, and a sulfonium salt decomposition method of the polymer luminescent material are obtained by heat treatment. A method for synthesizing a arylvinyl-42-(39) 1259575-based copolymer which is an example of the above polymer light-emitting material will be specifically described. For example, when a polymer light-emitting material is obtained by a Wittig reaction, for example, a bis(halogenated methyl) compound, a more system such as 2,5-dioctyloxy-p-xylene dibromide in N,N-dimethyl group is first introduced. In a decylamine solvent, a scaly salt is synthesized by reacting with triphenylphosphine, and the squama salt and the dialdehyde compound are further subjected to a system such as terephthalic acid, for example, in ethanol, by using wmlg condensation of lithium ethoxide to obtain a styryl group. A polymer luminescent material with 2,5-dioctyloxy-p-styrene. In this case, in order to obtain a copolymer, two or more kinds of scale salts and/or two or more kinds of dialdehyde compounds may be reacted.

When these polymer light-emitting materials are used as a material for forming a light-emitting layer, the purity thereof affects the light-emitting property. Therefore, it is preferable to carry out purification treatment by reprecipitation purification, separation by a chromatograph or the like after the synthesis. When the polymer light-emitting material is a material having low solubility, for example, after coating a corresponding precursor, it is heat-cured as shown in the chemical formula (5), and a light-emitting layer may be obtained. For example, when polystyrene is used as a polymer light-emitting material, a mirror salt of a corresponding precursor is placed in a portion to be a light-emitting layer, and then heat-treated to remove the sulfhydryl group to obtain a polystyrene having a function as a light-emitting layer. The low molecular material which can form the light-emitting layer can be basically used when the light-emitting material of the visible light region is -43-(40) 1259575. A material having an aromatic substituent is preferred. For example, there are conventionally used quinolinol aluminum complex (Alq;) or distyrylbiphenyl, BeBq2 or Zn (OXZ) 2 represented by the chemical formula (6), and, for example, a pyrazoline dimer, Quinazine carboxylic acid, benzopyranyl perchlorate, benzopyranazine, rubrene, phenanthroline ruthenium complex, and the like. The blue, green, and red light-emitting materials are appropriately selected from the above-mentioned polymer materials and low-molecular materials, and color can be displayed when placed at a predetermined position. A photomask vapor deposition method, a printing method, an inkjet method, or the like can be used when it is placed at a predetermined position.

The so-called main/guest type luminescent layer can be formed by dispersing the guest in the main function of the luminescent layer. In the main/guest type luminescent layer, it is determined that the luminescent color of the luminescent layer is substantially a guest material, so that the guest material can be selected depending on the luminescent color. Materials that produce high efficiency fluorescent light can generally be used. Basically, a material having a higher energy level than that of the excitation state of the guest material - 44 - (41) 1259575 is suitable as the main material. A material having a high degree of mobility of the carrier is sometimes required, and in this case, it can also be selected from the above polymer light-emitting body. A blue light-emitting guest material, for example, a phthalic acid, a diphenylethylbiphenyl or the like, which exhibits a green light-emitting material, such as quinacridone, rubrene, etc., which exhibits a red light-emitting material, for example, Rhodamine-based fluorochrome enamel master materials can be selected in conjunction with guest materials. For example, a light-emitting layer in which a main material and a guest material are respectively Zn (OXZ) 2 and anthracene is used, and a light-emitting layer exhibiting blue light emission can be obtained. Twilight materials can also be used for guest materials. For example, Ir(PPV) 3, Pt(thpy) 2, PtOEP, etc., which are not in the chemical formula (7), can be used.

Et/\Et Pt〇EP (7) When the luminescent material represented by the above chemical formula (7) is used as a guest material, CBP, DCTA, TCPB or A1 q 3 represented by the chemical formula (8) can be used as the main material. The main/guer type luminescent layer is formed by a co-evaporation method or a method of coating a host material and a guest material or a precursor liquid thereof. -45- (42) 1259575

(8) In the above example, the hole transport layer under the light-emitting layer is formed to form an upper electron transport layer, and the present invention is not limited thereto, and for example, only one of the hole transport layer or the electron transport layer may be formed or formed. The hole injection layer replaces the hole transport layer, and the light-emitting layer can also be formed separately. Outside the hole injection layer, the hole transport layer, the light-emitting layer, and the electron transport layer, for example, a plugging layer may be formed on the opposite electrode side of the light-emitting layer to extend the life of the light-emitting layer. The material for forming the plugging layer can be, for example, BCP represented by the chemical formula (9) or BAlq represented by the chemical formula (1), and B A1 q is preferable in consideration of long life.

...(9) -46- (43) 1259575

It is obvious that the optoelectronic device produced above can be driven in an active or passive manner. 15 to 20 are embodiments of the electronic apparatus of the present invention. The electronic device of the present embodiment includes the display means of the photovoltaic device of the present invention such as the above-described organic EL display device. Fig. 15 is an example of a display device for displaying a text or image of a television image or a computer. In Fig. 15, reference numeral 1 denotes a display device body using the photovoltaic device of the present invention. The display device body 10 can be applied to a large screen by using the above-described display device. Fig. 16 is a view showing an example of a navigation device for a vehicle. In Fig. 16, reference numeral 1010 denotes a navigation device body, and reference numeral 1011 denotes a display portion (display mechanism) using the photovoltaic device of the present invention. Fig. 17 is a view showing an example of a portable image recording apparatus (camera). In Fig. 17, reference numeral 1 020 denotes a recording device mounting body, and reference numeral 1 〇 21 is a -47 - (44) 1259575 indicating a display portion using the photovoltaic device of the present invention. Figure 18 is an example of a non-action phone. In Fig. 18, reference numeral 1〇3 denotes a mobile phone body, and reference numeral 1 〇 3 1 denotes a display portion (display mechanism) using the organic EL display device of the present invention. Fig. 19 shows an example of an information processing device such as a word processor or a personal computer. In Fig. 19, reference numeral 1〇4 denotes an information processing device, symbol 1〇41 denotes an information processing device body, symbol 1〇4 2 denotes an input portion such as a keyboard, and symbol 1 043 denotes an organic EL display using the present invention. The display portion of the device. Fig. 20 is an example of a watch type electronic device. In Fig. 2, reference numeral 1〇5 denotes a watch body, and reference numeral 1051 denotes a display portion using the organic display device of the present invention. Since the electronic device shown in Figs. 15 to 20 is provided with the display device of the photovoltaic device of the present invention, it is possible to achieve display with excellent durability and quality. The preferred embodiments of the present invention have been described above with reference to the drawings, but the present invention is not limited to the embodiments described above. In the above-described examples, each of the shapes, combinations, and the like of the respective constituent elements is an example, and various modifications may be made depending on design requirements and the like as long as they do not exceed the technical features of the present invention.

According to the substrate of the present invention and the method for producing the same, for example, it is possible to reduce the parasitic capacity due to the conductive portion and the like. According to the electronic device and the method of manufacturing the same of the present invention, the performance of the functional film can be effectively utilized. The present invention can be applied to a high-speed operation, and thus can realize a large-screen operation and a stable photoelectric device for long-term operation. -48 - (45) (45)1259575

According to the electronic device of the present invention, the Mi clothing has the display means of the electronic device of the present invention, so that the compliance is good and the display is stable. [Simple description of the drawing] [_1] is a commemorative view of the cross-sectional structure of the photovoltaic device and the substrate of the present invention. Fig. 2 is a schematic view showing a configuration of an organic EL display device according to an embodiment of the present invention. Fig. 3 is a circuit diagram showing an example of a circuit of an active matrix type organic EL display device. Fig. 4 is a schematic view showing a cross-sectional structure of a pixel region (organic El device). (a) is a tip end radiation type, and (b) is a back side radiation type. Fig. 5 is a view showing an example of a form of a planar structure of a partition member. Fig. 6 is an enlarged cross-sectional view showing a pixel region (organic EL device) of a top emission type. Fig. 7 is an explanatory view for explaining an embodiment of a method of manufacturing a photovoltaic device of the present invention for producing a display device having an organic EL element. Fig. 8 is an explanatory view for explaining an embodiment of a method of manufacturing a photovoltaic device of the present invention for producing a display device having an organic EL element. Fig. 9 is an explanatory view showing an embodiment of a method for producing a photovoltaic device of the present invention for producing a display device having an organic EL device. Fig. 10 is an explanatory view showing an embodiment of a method of manufacturing a photovoltaic device of the present invention for producing a device having an organic EL element. [Fig. 11] is an explanatory view for explaining an embodiment of a method of manufacturing a photovoltaic device of the present invention for producing a display device having an organic EL element of -49-(46) (46)1259575. [Fig. 1 2] shows other types of examples of the organic device. Fig. 13 is a view showing another example of the configuration of the organic EL device. Fig. 14 is a view showing another example of the circuit of the organic EL display device. Fig. 15 is a view showing an embodiment of an electronic apparatus of the present invention. Fig. 16 is a view showing another embodiment of the electronic apparatus of the present invention. Fig. 17 is a view showing another embodiment of the electronic apparatus of the present invention. Fig. 18 is a view showing another embodiment of the electronic apparatus of the present invention. Fig. 19 is a view showing another embodiment of the electronic apparatus of the present invention. Fig. 20 is a view showing another embodiment of the electronic apparatus of the present invention. [Description of Symbols] 10,100...Organic EL display device (optoelectronic device) 11 Wiring board 15 1,12 ··Substrate 16' 142,143...TFT (active device) 17,102...Light-emitting area 18, 281...separated Member 20, 27 1... Barrier layer 21, 27 2... Protective film 140... Organic EL element (functional film) -50-

Claims (1)

1259575 Compliance with the application for patents No. 92 1 06057 Patent application Chinese patent application amendments Amendment of April 4, 1994 A wiring board comprising: a substrate including a substrate and a wiring; and a member having a dielectric constant of 4 or less disposed on the surface of the substrate, wherein the wiring is disposed between the substrate and the upper surface, and the upper surface is disposed The area where the member is not formed. 2. A wiring board comprising: a substrate including an insulating substrate and wiring; and a member disposed on the substrate; the upper surface is provided with a region where the member is not formed, and the wiring is disposed on the insulating substrate Between the upper surfaces, the dielectric constant of the member is lower than the dielectric constant of the insulating substrate. 3. The wiring substrate of claim 1 or 2, wherein at least a portion of the member is covered with a protective film. 4. The wiring board according to item 3 of the patent application, wherein the protective film is a suppressing substance. 5. The wiring board of claim 1 or 2, wherein the member has a dielectric constant of 3 or less. 6. The wiring board of claim 1 or 2, wherein the member has a dielectric constant of 2.5 or less. 7. The wiring substrate of claim 1 or 2, wherein the substrate comprises an active component. 8. The wiring substrate of claim 7, wherein at least a barrier layer for inhibiting the penetration of the substance is disposed between the active element and the member. (2) 1259575. The wiring substrate of claim 1 or 2, wherein the component comprises at least one of cerium oxide-containing glass, an alkyl siloxane polymer, a sesquiterpene alkane polymer, and hydrogenation. A spin-on glass film, a diamond film, and a fluorinated amorphous carbon film of any one of an alkyl sesquioxane polymer and a polyaryl ether. The wiring substrate of claim 1 or 2, wherein This member is composed of a porous material. 1 1 . The wiring board according to claim 1 or 2, wherein the member contains an aerosol, a gel dispersing porous yttria, magnesium fluoride fine particles, a fluorine-based polymer, a porous polymer, and At least one of the materials contained in the material. An electronic device characterized in that the functional film is disposed in accordance with the region of the wiring substrate according to any one of claims 1 to 11. An optical device comprising: a substrate including an insulating substrate and a wiring; a plurality of pixel electrodes disposed on the substrate; a counter electrode disposed above the pixel electrode; and a plurality of a functional film of a photovoltaic material between the pixel electrode and the opposite electrode; a member disposed around the functional film and disposed between the opposite electrode and the upper surface thereof; the dielectric constant of the member is lower than that of the insulating substrate Dielectric rate. An optoelectronic device comprising: a substrate including a wiring; a plurality of pixel electrodes disposed on the substrate; a counter electrode disposed above the pixel electrode; and a plurality of pixel electrodes disposed on the plurality of pixel electrodes a functional film of a photovoltaic material between the electrodes; a member disposed around the functional film and disposed between the opposite electrode and the upper surface thereof; the dielectric of the member is -2 (3) 1259575 and 4 or less. The photoelectric device of claim 3, wherein the photovoltaic material is an organic electroluminescent material. 1 6. The optoelectronic device of claim 3, wherein the base system further comprises an active component coupled to the pixel electrode, the wiring comprising signal wiring for supplying a signal to the active component. 17. The optoelectronic device of claim 3, wherein the component comprises at least one of cerium oxide-containing glass, an alkyl siloxane polymer, a sesquioxanes polymer, and a hydrogenated alkane. A spin-on glass film, a diamond film, and a fluorinated amorphous carbon film of any one of a sesquioxane polymer and a polyaryl ether. 18. The photovoltaic device of claim 13 or 14, wherein the member is comprised of a porous material. 1 9 . The photovoltaic device according to claim 3 or 14, wherein the member is an aerosol, a gel dispersing porous yttria, magnesium fluoride microparticles, a fluorine polymer, a porous polymer And at least one of the particles containing the specified particles. A photovoltaic device according to claim 16 wherein a barrier layer for inhibiting the penetration of the substance is disposed between the member and the active member. 2 1 . The photovoltaic device of claim 13 or claim 14, wherein at least a portion of the member is covered with a protective layer that prevents passage of the substance. 2 2 - An electronic device characterized by having a display device of the photovoltaic device according to any one of claims 1 to 2 of the patent application.