TWI257130B - Plasma processing apparatus and method of designing the same - Google Patents

Plasma processing apparatus and method of designing the same

Info

Publication number
TWI257130B
TWI257130B TW094105927A TW94105927A TWI257130B TW I257130 B TWI257130 B TW I257130B TW 094105927 A TW094105927 A TW 094105927A TW 94105927 A TW94105927 A TW 94105927A TW I257130 B TWI257130 B TW I257130B
Authority
TW
Taiwan
Prior art keywords
plasma
processing apparatus
distribution
plasma processing
producing portion
Prior art date
Application number
TW094105927A
Other languages
English (en)
Chinese (zh)
Other versions
TW200540988A (en
Inventor
Shinzo Uchiyama
Original Assignee
Canon Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Kk filed Critical Canon Kk
Publication of TW200540988A publication Critical patent/TW200540988A/zh
Application granted granted Critical
Publication of TWI257130B publication Critical patent/TWI257130B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32357—Generation remote from the workpiece, e.g. down-stream
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32422—Arrangement for selecting ions or species in the plasma
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
    • H10P14/6518—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by introduction of substances into an already-existing insulating layer
    • H10P14/6524—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by introduction of substances into an already-existing insulating layer the substance being nitrogen
    • H10P14/6526—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by introduction of substances into an already-existing insulating layer the substance being nitrogen introduced into an oxide material, e.g. changing SiO to SiON
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
    • H10P14/6529—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to a gas or vapour
    • H10P14/6532—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to a gas or vapour by exposure to a plasma

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
TW094105927A 2004-03-01 2005-02-25 Plasma processing apparatus and method of designing the same TWI257130B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004056618A JP2005251803A (ja) 2004-03-01 2004-03-01 プラズマ処理装置およびその設計方法

Publications (2)

Publication Number Publication Date
TW200540988A TW200540988A (en) 2005-12-16
TWI257130B true TWI257130B (en) 2006-06-21

Family

ID=34908925

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094105927A TWI257130B (en) 2004-03-01 2005-02-25 Plasma processing apparatus and method of designing the same

Country Status (5)

Country Link
US (1) US20050194097A1 (cg-RX-API-DMAC7.html)
JP (1) JP2005251803A (cg-RX-API-DMAC7.html)
KR (1) KR100712172B1 (cg-RX-API-DMAC7.html)
CN (1) CN100407380C (cg-RX-API-DMAC7.html)
TW (1) TWI257130B (cg-RX-API-DMAC7.html)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007088199A (ja) * 2005-09-22 2007-04-05 Canon Inc 処理装置
CN100405537C (zh) * 2005-12-07 2008-07-23 北京北方微电子基地设备工艺研究中心有限责任公司 等离子体反应装置
EP2044610B1 (en) * 2006-07-20 2012-11-28 SPP Process Technology Systems UK Limited Plasma sources
WO2008009898A1 (en) 2006-07-20 2008-01-24 Aviza Technology Limited Ion sources
JP5313893B2 (ja) * 2006-07-20 2013-10-09 エスピーティーエス テクノロジーズ イーティー リミティド イオンデポジション装置
GB0616131D0 (en) * 2006-08-14 2006-09-20 Oxford Instr Plasma Technology Surface processing apparatus
KR101682155B1 (ko) * 2015-04-20 2016-12-02 주식회사 유진테크 기판 처리 장치
JP7097809B2 (ja) * 2018-12-28 2022-07-08 東京エレクトロン株式会社 ガス導入構造、処理装置及び処理方法
CN116538517B (zh) * 2022-01-26 2025-11-11 思脉瑞（北京）科技有限公司 艾烟香烟净化装置
JP2024013757A (ja) * 2022-07-21 2024-02-01 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ状態推定方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01149964A (ja) * 1987-12-04 1989-06-13 Furukawa Electric Co Ltd:The プラズマｃｖｄ装置用シャワー電極
JPH07101685B2 (ja) * 1989-01-26 1995-11-01 富士通株式会社 マイクロ波プラズマ処理装置
JP2886752B2 (ja) * 1991-11-05 1999-04-26 キヤノン株式会社 無端環状導波管を有するマイクロ波導入装置及び該装置を備えたプラズマ処理装置
WO2004089046A1 (ja) * 1991-11-05 2004-10-14 Nobumasa Suzuki 無端環状導波管を有するマイクロ波導入装置及び該装置を備えたプラズマ処理装置
JPH06204181A (ja) * 1992-12-29 1994-07-22 Ibiden Co Ltd プラズマエッチング用電極板
JPH0845910A (ja) * 1994-07-29 1996-02-16 Nippon Steel Corp プラズマ処理装置
US5891350A (en) * 1994-12-15 1999-04-06 Applied Materials, Inc. Adjusting DC bias voltage in plasma chambers
US5976261A (en) * 1996-07-11 1999-11-02 Cvc Products, Inc. Multi-zone gas injection apparatus and method for microelectronics manufacturing equipment
JPH11350143A (ja) * 1998-06-02 1999-12-21 Toshiba Corp 成膜装置
JP2000058294A (ja) * 1998-08-07 2000-02-25 Furontekku:Kk プラズマ処理装置
US6331754B1 (en) * 1999-05-13 2001-12-18 Tokyo Electron Limited Inductively-coupled-plasma-processing apparatus
JP2001023955A (ja) * 1999-07-07 2001-01-26 Mitsubishi Electric Corp プラズマ処理装置
JP3889280B2 (ja) 2002-01-07 2007-03-07 忠弘 大見 プラズマ処理装置

Also Published As

Publication number Publication date
US20050194097A1 (en) 2005-09-08
TW200540988A (en) 2005-12-16
KR100712172B1 (ko) 2007-04-27
KR20060043213A (ko) 2006-05-15
CN1664996A (zh) 2005-09-07
JP2005251803A (ja) 2005-09-15
CN100407380C (zh) 2008-07-30

Similar Documents

Publication Publication Date Title
TW200629389A (en) Method for treating a substrate
TWI257130B (en) Plasma processing apparatus and method of designing the same
WO2008067490A3 (en) Parallel grid population
TW200632127A (en) Shadow frame with mask panels
WO2006038976A3 (en) Plasma processing system for treating a substrate
TW200737311A (en) Plasma processing apparatus and plasma processing method
EP2261393A3 (en) Plasma uniformity control by gas diffuser hole design
TW200802680A (en) Substrate support structure, heat treatment apparatus using same, first sheet-like object for use in the substrate support structure, method of manufacturing the substrate support structure, heat treatment apparatus, and substrate sucking method
TW200601429A (en) Method and apparatus for photomask plasma etching
WO2004030015A3 (en) Method and apparatus for an improved baffle plate in a plasma processing system
SG135934A1 (en) Lithographic apparatus, device manufacturing method, and device manufactured thereby
WO2008146918A1 (ja) プラズマ処理装置用電極の製造方法および再生方法
MY168863A (en) Biomedical patches with aligned fibers
TW200801819A (en) Template having a varying thickness to facilitate expelling a gas positioned between a substrate and the template
TW200637269A (en) Methods and apparatus for providing an admission control system in a wireless mesh network
TW200721310A (en) Treatment of low dielectric constant films using a batch processing system
ATE468713T1 (de) Verfahren und vorrichtung zur bereitstellung mehrerer dienste über einen kanal in einem mobilkommunikationssystem
TW200609376A (en) Pecvd susceptor support construction
SG144148A1 (en) Stabilized photoresist structure for etching process
EP2023572A3 (en) Method, computer program and apparatus for controlling access to a computer resource and obtaining a baseline therefor
SG143183A1 (en) A method , program product and apparatus for performing decomposition of a pattern for use in a dpt process
TW200505088A (en) Fuel cell support structure and method of manufacture
TW200614365A (en) Method for providing uniform removal of organic material
TW200500194A (en) Method of producing a processing substrate
TW200727448A (en) Shadow masks for colorizing process of display devices

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees