TWI256691B - Vertical heat treatment device - Google Patents

Vertical heat treatment device

Info

Publication number
TWI256691B
TWI256691B TW091134645A TW91134645A TWI256691B TW I256691 B TWI256691 B TW I256691B TW 091134645 A TW091134645 A TW 091134645A TW 91134645 A TW91134645 A TW 91134645A TW I256691 B TWI256691 B TW I256691B
Authority
TW
Taiwan
Prior art keywords
heater
heat treatment
treatment device
vertical heat
installation portion
Prior art date
Application number
TW091134645A
Other languages
English (en)
Chinese (zh)
Other versions
TW200305226A (en
Inventor
Masato Kadobe
Ken Nakao
Kenichi Yamaga
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of TW200305226A publication Critical patent/TW200305226A/zh
Application granted granted Critical
Publication of TWI256691B publication Critical patent/TWI256691B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B60—VEHICLES IN GENERAL
    • B60B—VEHICLE WHEELS; CASTORS; AXLES FOR WHEELS OR CASTORS; INCREASING WHEEL ADHESION
    • B60B33/00—Castors in general; Anti-clogging castors
    • B60B33/08—Ball castors
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Muffle Furnaces And Rotary Kilns (AREA)
  • General Preparation And Processing Of Foods (AREA)
  • Resistance Heating (AREA)
TW091134645A 2002-04-12 2002-11-28 Vertical heat treatment device TWI256691B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002109921A JP4132932B2 (ja) 2002-04-12 2002-04-12 縦型熱処理装置

Publications (2)

Publication Number Publication Date
TW200305226A TW200305226A (en) 2003-10-16
TWI256691B true TWI256691B (en) 2006-06-11

Family

ID=29243213

Family Applications (1)

Application Number Title Priority Date Filing Date
TW091134645A TWI256691B (en) 2002-04-12 2002-11-28 Vertical heat treatment device

Country Status (5)

Country Link
JP (1) JP4132932B2 (ja)
KR (1) KR100882635B1 (ja)
CN (2) CN2600455Y (ja)
TW (1) TWI256691B (ja)
WO (1) WO2003088339A1 (ja)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5571223A (en) * 1993-06-22 1996-11-05 Scapa Group Plc Roller apparatus
JPH08281844A (ja) * 1995-04-13 1996-10-29 Uchida Seisakusho:Kk 片面段ボール製造装置
JP4510661B2 (ja) * 2005-02-14 2010-07-28 日本電信電話株式会社 酸化炉装置
JP4335908B2 (ja) * 2006-12-22 2009-09-30 東京エレクトロン株式会社 縦型熱処理装置及び縦型熱処理方法
JP5213594B2 (ja) * 2008-09-04 2013-06-19 東京エレクトロン株式会社 熱処理装置
US8536491B2 (en) * 2009-03-24 2013-09-17 Taiwan Semiconductor Manufacturing Co., Ltd. Rotatable and tunable heaters for semiconductor furnace
CN103899920A (zh) * 2014-03-20 2014-07-02 上海华力微电子有限公司 一种炉管的漏水检测方法
CN109682215A (zh) * 2019-01-10 2019-04-26 浙江晶盛机电股份有限公司 一种用于碳化硅炉炉底板的升降合笼结构及其使用方法
CN110819376A (zh) * 2019-11-20 2020-02-21 中国石油大学(华东) 一种便于操作的石油蒸馏实验装置
FI129948B (en) * 2021-05-10 2022-11-15 Picosun Oy SUBSTRATE PROCESSING APPARATUS AND METHOD

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5637153A (en) * 1993-04-30 1997-06-10 Tokyo Electron Limited Method of cleaning reaction tube and exhaustion piping system in heat processing apparatus
US5820366A (en) * 1996-07-10 1998-10-13 Eaton Corporation Dual vertical thermal processing furnace
JP3587280B2 (ja) * 1997-03-03 2004-11-10 東京エレクトロン株式会社 縦型熱処理装置およびキャスター付ヒーターの設置方法
JP3404674B2 (ja) * 2000-01-21 2003-05-12 株式会社真空技研 超高温熱処理装置

Also Published As

Publication number Publication date
TW200305226A (en) 2003-10-16
JP4132932B2 (ja) 2008-08-13
KR20040099261A (ko) 2004-11-26
KR100882635B1 (ko) 2009-02-06
JP2003303781A (ja) 2003-10-24
CN2600455Y (zh) 2004-01-21
WO2003088339A1 (fr) 2003-10-23
CN1618120A (zh) 2005-05-18
CN1309028C (zh) 2007-04-04

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees