TWI255968B - Method of forming resist pattern, positive resist composition, and layered product - Google Patents

Method of forming resist pattern, positive resist composition, and layered product

Info

Publication number
TWI255968B
TWI255968B TW092133616A TW92133616A TWI255968B TW I255968 B TWI255968 B TW I255968B TW 092133616 A TW092133616 A TW 092133616A TW 92133616 A TW92133616 A TW 92133616A TW I255968 B TWI255968 B TW I255968B
Authority
TW
Taiwan
Prior art keywords
resist composition
resist pattern
pattern
positive resist
layered product
Prior art date
Application number
TW092133616A
Other languages
English (en)
Other versions
TW200421028A (en
Inventor
Hideo Hada
Miwa Miyairi
Naotaka Kubota
Takeshi Iwai
Original Assignee
Tokyo Ohka Kogyo Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Ohka Kogyo Co Ltd filed Critical Tokyo Ohka Kogyo Co Ltd
Publication of TW200421028A publication Critical patent/TW200421028A/zh
Application granted granted Critical
Publication of TWI255968B publication Critical patent/TWI255968B/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/106—Binder containing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/106—Binder containing
    • Y10S430/111—Polymer of unsaturated acid or ester

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
TW092133616A 2002-12-02 2003-11-28 Method of forming resist pattern, positive resist composition, and layered product TWI255968B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002350353A JP4278966B2 (ja) 2002-12-02 2002-12-02 レジストパターン形成方法、ポジ型レジスト組成物及び積層体

Publications (2)

Publication Number Publication Date
TW200421028A TW200421028A (en) 2004-10-16
TWI255968B true TWI255968B (en) 2006-06-01

Family

ID=32463081

Family Applications (1)

Application Number Title Priority Date Filing Date
TW092133616A TWI255968B (en) 2002-12-02 2003-11-28 Method of forming resist pattern, positive resist composition, and layered product

Country Status (9)

Country Link
US (1) US7316885B2 (zh)
EP (1) EP1583998B1 (zh)
JP (1) JP4278966B2 (zh)
KR (1) KR100711542B1 (zh)
CN (1) CN1997939B (zh)
AU (1) AU2003288549A1 (zh)
DE (1) DE60327102D1 (zh)
TW (1) TWI255968B (zh)
WO (1) WO2004051372A2 (zh)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005031233A (ja) * 2003-07-09 2005-02-03 Tokyo Ohka Kogyo Co Ltd レジスト組成物、積層体、及びレジストパターン形成方法
US7285781B2 (en) * 2004-07-07 2007-10-23 Intel Corporation Characterizing resist line shrinkage due to CD-SEM inspection
US7595141B2 (en) * 2004-10-26 2009-09-29 Az Electronic Materials Usa Corp. Composition for coating over a photoresist pattern
KR100680426B1 (ko) 2004-12-30 2007-02-08 주식회사 하이닉스반도체 포토레지스트 패턴 코팅용 수용성 조성물 및 이를 이용한미세패턴 형성 방법
JP4959171B2 (ja) * 2005-04-15 2012-06-20 東京応化工業株式会社 化合物、溶解抑制剤、ポジ型レジスト組成物、レジストパターン形成方法
JP4472586B2 (ja) * 2005-06-20 2010-06-02 東京応化工業株式会社 ポジ型レジスト組成物およびレジストパターン形成方法
JP2008209889A (ja) 2007-01-31 2008-09-11 Fujifilm Corp ポジ型レジスト組成物及び該ポジ型レジスト組成物を用いたパターン形成方法
US20080187868A1 (en) * 2007-02-07 2008-08-07 Munirathna Padmanaban Photoactive Compounds
JP2008268920A (ja) * 2007-03-28 2008-11-06 Fujifilm Corp ポジ型レジスト組成物およびパターン形成方法
US8110339B2 (en) * 2007-09-06 2012-02-07 Massachusetts Institute Of Technology Multi-tone resist compositions
US7700261B2 (en) 2007-09-26 2010-04-20 Fujifilm Corporation Positive photosensitive composition and a pattern-forming method using the same
JP5449909B2 (ja) * 2008-08-04 2014-03-19 東京応化工業株式会社 ポジ型レジスト組成物及びレジストパターン形成方法
JP2012502383A (ja) * 2008-09-10 2012-01-26 データレース リミテッド 多色刷りコード
JP5139250B2 (ja) * 2008-12-05 2013-02-06 東京応化工業株式会社 パターン微細化用被覆剤及びこれを用いた微細パターンの形成方法
JP5871577B2 (ja) * 2011-11-16 2016-03-01 東京応化工業株式会社 レジストパターン形成方法
JP6541508B2 (ja) * 2014-08-25 2019-07-10 住友化学株式会社 塩、樹脂、レジスト組成物及びレジストパターンの製造方法
CN117539127A (zh) * 2017-01-13 2024-02-09 日产化学株式会社 包含酰胺溶剂的抗蚀剂下层膜形成用组合物

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01307228A (ja) 1988-06-06 1989-12-12 Hitachi Ltd パターン形成法
JPH04364021A (ja) 1991-06-11 1992-12-16 Sumitomo Electric Ind Ltd 半導体装置の製造方法
JPH05166717A (ja) 1991-12-16 1993-07-02 Mitsubishi Electric Corp 微細パターン形成方法
JP3057879B2 (ja) 1992-02-28 2000-07-04 株式会社日立製作所 半導体装置の製造方法
KR100382960B1 (ko) * 1998-07-03 2003-05-09 닛뽕덴끼 가부시끼가이샤 락톤 구조를 갖는 (메트)아크릴레이트 유도체, 중합체,포토레지스트 조성물, 및 이것을 사용한 패턴 형성 방법
JP3810957B2 (ja) * 1998-08-06 2006-08-16 株式会社東芝 レジスト用樹脂、レジスト組成物およびそれを用いたパターン形成方法
JP3950584B2 (ja) 1999-06-29 2007-08-01 Ａｚエレクトロニックマテリアルズ株式会社 水溶性樹脂組成物
JP2002040661A (ja) * 2000-07-24 2002-02-06 Toray Ind Inc ポジ型感放射線性組成物
JP4441104B2 (ja) 2000-11-27 2010-03-31 東京応化工業株式会社 ポジ型レジスト組成物
US6927009B2 (en) 2001-05-22 2005-08-09 Fuji Photo Film Co., Ltd. Positive photosensitive composition
US20030008968A1 (en) 2001-07-05 2003-01-09 Yoshiki Sugeta Method for reducing pattern dimension in photoresist layer
JP3895224B2 (ja) 2001-12-03 2007-03-22 東京応化工業株式会社 ポジ型レジスト組成物及びそれを用いたレジストパターン形成方法
JP3803286B2 (ja) * 2001-12-03 2006-08-02 東京応化工業株式会社 ポジ型レジスト組成物及びレジストパターンの形成方法

Also Published As

Publication number Publication date
CN1997939A (zh) 2007-07-11
EP1583998A3 (en) 2005-11-23
AU2003288549A8 (en) 2004-06-23
WO2004051372A2 (en) 2004-06-17
KR100711542B1 (ko) 2007-04-27
AU2003288549A1 (en) 2004-06-23
KR20050084068A (ko) 2005-08-26
US20060154181A1 (en) 2006-07-13
US7316885B2 (en) 2008-01-08
DE60327102D1 (de) 2009-05-20
EP1583998A2 (en) 2005-10-12
JP4278966B2 (ja) 2009-06-17
WO2004051372A3 (en) 2005-10-06
TW200421028A (en) 2004-10-16
EP1583998B1 (en) 2009-04-08
JP2004184637A (ja) 2004-07-02
CN1997939B (zh) 2011-03-30

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