TWI247050B - Inductively coupled plasma treatment apparatus - Google Patents

Inductively coupled plasma treatment apparatus Download PDF

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Publication number
TWI247050B
TWI247050B TW090104983A TW90104983A TWI247050B TW I247050 B TWI247050 B TW I247050B TW 090104983 A TW090104983 A TW 090104983A TW 90104983 A TW90104983 A TW 90104983A TW I247050 B TWI247050 B TW I247050B
Authority
TW
Taiwan
Prior art keywords
dielectric window
processing chamber
mask member
coil electrode
metal film
Prior art date
Application number
TW090104983A
Other languages
English (en)
Chinese (zh)
Inventor
Michihiro Hiramoto
Hirohiko Nakano
Osamu Tsuji
Original Assignee
Samco Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samco Inc filed Critical Samco Inc
Application granted granted Critical
Publication of TWI247050B publication Critical patent/TWI247050B/zh

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32211—Means for coupling power to the plasma
    • H01J37/32238—Windows
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32651—Shields, e.g. dark space shields, Faraday shields
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E30/00—Energy generation of nuclear origin
    • Y02E30/10—Nuclear fusion reactors

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Power Engineering (AREA)
  • Plasma Technology (AREA)
  • ing And Chemical Polishing (AREA)
  • Drying Of Semiconductors (AREA)
TW090104983A 2000-03-10 2001-03-05 Inductively coupled plasma treatment apparatus TWI247050B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000067107A JP4469054B2 (ja) 2000-03-10 2000-03-10 誘導結合形プラズマ処理装置

Publications (1)

Publication Number Publication Date
TWI247050B true TWI247050B (en) 2006-01-11

Family

ID=18586350

Family Applications (1)

Application Number Title Priority Date Filing Date
TW090104983A TWI247050B (en) 2000-03-10 2001-03-05 Inductively coupled plasma treatment apparatus

Country Status (3)

Country Link
JP (1) JP4469054B2 (cg-RX-API-DMAC10.html)
KR (1) KR100778294B1 (cg-RX-API-DMAC10.html)
TW (1) TWI247050B (cg-RX-API-DMAC10.html)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN117044406A (zh) * 2021-08-04 2023-11-10 日新电机株式会社 等离子体处理装置
TWI893477B (zh) * 2022-11-07 2025-08-11 日商日新電機股份有限公司 電漿處理裝置

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20040019608A (ko) * 2002-08-28 2004-03-06 가부시키가이샤 히다치 하이테크놀로지즈 플라즈마처리장치 및 플라즈마처리방법
TWI391518B (zh) * 2005-09-09 2013-04-01 愛發科股份有限公司 離子源及電漿處理裝置
JP5822133B2 (ja) * 2011-12-22 2015-11-24 サムコ株式会社 誘導結合形プラズマ処理装置のマスク部材
JP6762026B2 (ja) * 2016-08-17 2020-09-30 サムコ株式会社 誘導結合型プラズマ処理装置
JP6867686B2 (ja) * 2017-06-30 2021-05-12 株式会社 セルバック 接合装置
JP7469625B2 (ja) * 2020-04-13 2024-04-17 日新電機株式会社 プラズマ源及びプラズマ処理装置

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3371176B2 (ja) * 1995-01-25 2003-01-27 ソニー株式会社 プラズマ処理装置および半導体装置の製造方法
US6091045A (en) * 1996-03-28 2000-07-18 Sumitomo Metal Industries, Inc. Plasma processing apparatus utilizing a microwave window having a thinner inner area
TW409487B (en) * 1998-04-10 2000-10-21 Sumitomo Metal Ind Microwave plasma treatment apparatus and microwave plasma treatment method

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN117044406A (zh) * 2021-08-04 2023-11-10 日新电机株式会社 等离子体处理装置
TWI893477B (zh) * 2022-11-07 2025-08-11 日商日新電機股份有限公司 電漿處理裝置

Also Published As

Publication number Publication date
KR100778294B1 (ko) 2007-11-22
JP4469054B2 (ja) 2010-05-26
KR20010102839A (ko) 2001-11-16
JP2001254188A (ja) 2001-09-18

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