KR100778294B1 - 유도결합형 플라스마 처리장치 - Google Patents

유도결합형 플라스마 처리장치 Download PDF

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Publication number
KR100778294B1
KR100778294B1 KR1020010011090A KR20010011090A KR100778294B1 KR 100778294 B1 KR100778294 B1 KR 100778294B1 KR 1020010011090 A KR1020010011090 A KR 1020010011090A KR 20010011090 A KR20010011090 A KR 20010011090A KR 100778294 B1 KR100778294 B1 KR 100778294B1
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KR
South Korea
Prior art keywords
dielectric window
coil electrode
mask member
processing chamber
high frequency
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Expired - Lifetime
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KR1020010011090A
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English (en)
Korean (ko)
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KR20010102839A (ko
Inventor
히라모토미치히로
나카노히로히코
츠지오사무
Original Assignee
사무코 가부시키가이샤
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Application filed by 사무코 가부시키가이샤 filed Critical 사무코 가부시키가이샤
Publication of KR20010102839A publication Critical patent/KR20010102839A/ko
Application granted granted Critical
Publication of KR100778294B1 publication Critical patent/KR100778294B1/ko
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Expired - Lifetime legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32211—Means for coupling power to the plasma
    • H01J37/32238—Windows
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32651—Shields, e.g. dark space shields, Faraday shields
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E30/00—Energy generation of nuclear origin
    • Y02E30/10—Nuclear fusion reactors

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Power Engineering (AREA)
  • Plasma Technology (AREA)
  • ing And Chemical Polishing (AREA)
  • Drying Of Semiconductors (AREA)
KR1020010011090A 2000-03-10 2001-03-05 유도결합형 플라스마 처리장치 Expired - Lifetime KR100778294B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2000-067107 2000-03-10
JP2000067107A JP4469054B2 (ja) 2000-03-10 2000-03-10 誘導結合形プラズマ処理装置

Publications (2)

Publication Number Publication Date
KR20010102839A KR20010102839A (ko) 2001-11-16
KR100778294B1 true KR100778294B1 (ko) 2007-11-22

Family

ID=18586350

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020010011090A Expired - Lifetime KR100778294B1 (ko) 2000-03-10 2001-03-05 유도결합형 플라스마 처리장치

Country Status (3)

Country Link
JP (1) JP4469054B2 (cg-RX-API-DMAC10.html)
KR (1) KR100778294B1 (cg-RX-API-DMAC10.html)
TW (1) TWI247050B (cg-RX-API-DMAC10.html)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20040019608A (ko) * 2002-08-28 2004-03-06 가부시키가이샤 히다치 하이테크놀로지즈 플라즈마처리장치 및 플라즈마처리방법
TWI391518B (zh) * 2005-09-09 2013-04-01 愛發科股份有限公司 離子源及電漿處理裝置
JP5822133B2 (ja) * 2011-12-22 2015-11-24 サムコ株式会社 誘導結合形プラズマ処理装置のマスク部材
JP6762026B2 (ja) * 2016-08-17 2020-09-30 サムコ株式会社 誘導結合型プラズマ処理装置
JP6867686B2 (ja) * 2017-06-30 2021-05-12 株式会社 セルバック 接合装置
JP7469625B2 (ja) * 2020-04-13 2024-04-17 日新電機株式会社 プラズマ源及びプラズマ処理装置
JP7688258B2 (ja) * 2021-08-04 2025-06-04 日新電機株式会社 プラズマ処理装置
JP7891641B2 (ja) * 2022-11-07 2026-07-17 日新電機株式会社 プラズマ処理装置

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08203873A (ja) * 1995-01-25 1996-08-09 Sony Corp プラズマ処理装置
KR19990014799A (ko) * 1996-03-28 1999-02-25 고지마마타오 플라즈마 처리장치 및 플라즈마 처리방법
KR19990081764A (ko) * 1998-04-10 1999-11-15 고지마 마따오 마이크로파 플라즈마 처리장치 및 마이크로파 플라즈마 처리방법

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08203873A (ja) * 1995-01-25 1996-08-09 Sony Corp プラズマ処理装置
KR19990014799A (ko) * 1996-03-28 1999-02-25 고지마마타오 플라즈마 처리장치 및 플라즈마 처리방법
KR19990081764A (ko) * 1998-04-10 1999-11-15 고지마 마따오 마이크로파 플라즈마 처리장치 및 마이크로파 플라즈마 처리방법

Also Published As

Publication number Publication date
TWI247050B (en) 2006-01-11
JP4469054B2 (ja) 2010-05-26
KR20010102839A (ko) 2001-11-16
JP2001254188A (ja) 2001-09-18

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