1245340 九、發明說明： 【發明所屬之技術領域】 本案係為一種斜面製造方法，尤指應用於半導體製程 上之斜面製造方法。 【先前技術】 如第一圖（a)(b)所示是習知技藝中傳統光學讀寫頭中 利用反射面之單一雷射光源封裝結構示意圖，第一圖(的為 第一圖(a)中沿A-A’沿線的剖視圖。在第一圖(b)中，石夕基 板100上設置有雷射二極體102與光接受器1〇3，而雷射 二極體102所發出的雷射光1〇4經由一 45度斜面1〇1而反 射至上方鏡頭（圖中未顯示）。具有如此結構的矽基板將可 免去額外組裝微稜鏡(Microprism)之步驟，有效節省製程步 驟與成本。 、 由上圖看出，吾人必須在上述石夕基板上形成一個 45度斜面1〇1方能完成上述結構，該45度斜面ι〇ι可作 t式光，兀件中所需之光學反射面。而第二圖⑷便顯示 =知技藝中H面表面為{1⑽}#價晶格平面之晶棒· 割時後，可製作出一表面為{_等價 於石夕晶圓2〇m2()1(如第二_所示），而習用手段再 該钱刻罩幕上^方形成_細罩幕_未示出）， 奉具有至少-_窗口 299，該_窗口 299 1245340 <:—=δ，而習用手段係將該側壁-與該基板之 〇—耗曰曰格方向297間之偏移角度刻意控制在45度， 二-來，相—非均向侧(例如氫氧化雜刻溶液之餘 :i，:人將可得到如第二_所示之表面為_等價 曰田曰t十面之45度斜面101。但是，經實作顯示，以上述習 方式所完成之45度斜面.101之表面平坦度不佳，表面平 勺粗键度(average surface贿钟卿)通常在2〇〇奈米左右。 而因為光學反射面的表面粗财會造成人射光的散 j ’為了不影響反射光人射到後續光學元件後的成像品 貝’表面粗糙度需低於使用波長的十分之一。光通訊運用 =先源涵蓋部份可見光與紅外光波段；在光儲存方面，隨 者光儲存》之資料密度皆不斷提高之狀況下，雷射二極 體1〇2所發出之雷射光，其波長越來脑，因此在這些應 用上、，表面平均粗糙度在奈米左右之45度斜面ι〇ι 將無法滿足後續雷射光對於反射面粗糙度之要求，而追究 其表面粗糙度不佳之主因，主妓因為上述方法會在幻 度斜面1G1之表面上大量誘發晶相較穩定之{111}等價晶 格平面之微小平面出現，導致反射面平坦度大幅下降，此 類相關討論可參閱Sens〇rs and Actuat⑽a 48(1995)229-238 中 ’ lrena Barycka 及 Irena Zubel 所著之1245340 IX. Description of the invention: [Technical field to which the invention belongs] This case is a bevel manufacturing method, especially a bevel manufacturing method applied to a semiconductor process. [Prior art] As shown in the first figure (a) (b) is a schematic diagram of a single laser light source package structure using a reflective surface in a conventional optical read-write head in the conventional art. The first figure (the first figure (a ) Along the AA 'line. In the first figure (b), the laser diode 102 and the light receiver 103 are arranged on the Shixi substrate 100, and the laser diode 102 emits The laser light 104 is reflected to the upper lens (not shown in the figure) through a 45-degree inclined plane 101. The silicon substrate with such a structure will eliminate the need for additional steps of assembling Microprism, which can effectively save the process. Steps and costs. As can be seen from the above figure, we must form a 45-degree inclined surface 101 on the Shi Xi substrate to complete the above structure. The 45-degree inclined surface can be used as a T-type light. The required optical reflection surface. And the second figure ⑷ shows that the surface of the H surface is {1⑽} # crystal rod with a valence lattice plane in the knowing technique. After cutting, a surface with {_ equivalent to Shi Xi Wafer 20m2 () 1 (as shown in the second figure), and the conventional means should be engraved on the mask to form a thin mask_not shown). Less-_window 299, the _window 299 1245340 <:-= δ, and the conventional method is to deliberately control the offset angle between the side wall and the substrate 〇- consumption grid direction 297 at 45 degrees, two -Come, phase-heterogeneous side (for example, the remainder of the hydroxide miscellaneous solution: i ,: people will get a 45-degree inclined surface 101 equivalent to the surface shown in the second figure. However, the actual implementation shows that the 45-degree inclined plane completed in the above-mentioned manner. The surface flatness of 101 is not good, and the rough surface bond (average surface) is usually about 200 nanometers. Because The rough surface of the optical reflecting surface will cause the scattered light of the person. 'In order not to affect the reflected light after the person hits the subsequent optical elements,' the surface roughness needs to be less than one tenth of the used wavelength. Optical communication application = The first source covers some visible light and infrared light bands; in the light storage aspect, the data density of the “Accompanied Light Storage” is constantly increasing, and the wavelength of the laser light emitted by the laser diode 102 is increasing. Therefore, in these applications, the average roughness of the surface is a 45-degree bevel around the nanometer. ι〇ι will not be able to meet the subsequent laser light's requirements for the roughness of the reflective surface, and the main reason for the poor surface roughness will be investigated. The main prostitute will induce a large number of relatively stable crystal phases on the surface of the illusive slope 1G1 because of the above method } The emergence of tiny planes of equivalent lattice planes results in a significant decrease in the flatness of the reflective surface. For related discussions, refer to 'Lrena Barycka and Irena Zubel in Sensors and Actuat⑽a 48 (1995) 229-238.
Silicon anisortropic etching in K〇H七〇ρ—論文 内容，本案不再贅述。 另外’對表面為{100}等價晶格平面的矽晶圓2〇1(如第 二圖(b)所示）進行非均向蝕刻（例如氫氧化鉀蝕刻溶液之蝕 j24534〇 = :::第:圖(輪^ 面晶，平面之表 點，：ί 4二出下列方法來企圖改善上述作法之缺 平面之曰係將頂面表面為^等價晶格 表面之曰狀古^亚、、泉不之方向切割時後，可製作出― 9 74产t = D，、{1G()}等價晶格平面之晶格方向間具有 曰度夹角的矽晶圓3〇1(如第 晶圓301之表面卜太拟士、 ^ …、俊丹於矽 刻罩幕上具有續罩幕(圖中未示出），該蝕 3" 5 〇 3" 397 ΗΜ 與該基板之<1〇〇>等價晶格方向 間之偏移角度控制在約〇度，如此一來，透過 =刻如氫氧化卸钱刻溶液之_)後，吾人將可 如^圖(c)所示之表面為{ιιι}等價晶格平面 =45度斜面101’其與基板表面39〇夹45度:= 斜面380則會與基板表面390間夾一 64·4度角。 因此，由上圖可清楚看出，此製程需要特別^斜角 又切，晶棒’與一般切割法不同，必須特別訂購，而且合 因石夕晶圓本身的晶格方向而無法在㈣製程後 二 個法向景is 7T I 士 ^ ^ 、 互垂直之45度斜面。是以，本發明提供—製程 方法，其可大幅提高平坦度與克服矽晶圓晶格方向 而達到製作雙侧45度斜面，係為發展本案之主要目的。 1245340 【發明内容】 本案係為一種斜面製造方法，應用於一半導體製程 上，其製造方法包含刊步驟：提供—_晶體結構之半 導體基板，該半導體基板具有—表面，該表面為⑽}等價 晶格平面；於該半導體基板之表面上方形成—_罩幕， 。亥钱刻罩幕上具有—I虫刻窗口，該餘刻窗口具有沿一第一 方向延伸之-側壁’而該第—方向與該半導體基板之 <脈等價晶格方向間具有—偏移角度，該偏移角度之範 圍大於等於〇度且小於45度或小於等於9G度但大於衫 度，以及運用祕刻罩幕及該_窗口觸基板進行一選 紐非均向侧（selected _咖_咖㈣，進而沿該第 二方向而於該基板表面上_出表面為⑽}等價晶格平 面之一斜面。 本案另一方面係為—種斜面製造方法，應用於一半導 構’其製造方法包含下列步驟：提供—鑽石晶體結 縣板，該半導縣板具有—表面，該表面為剛 平面；於該半導體基板之表面上方形成-關罩 罩幕上具有—_窗口，舰刻窗口具有沿一 <1喊第—方_半導體基板之 大於等於// ° Ί偏移角度’該偏移驗之範圍 人於專於0度且小於45度 以及運用__及軸刻==fs W45度； 非均向_，進而 钱，口對該基板進行-選擇性 亥弟—方向而於該基板表面上蝕刻出 1245340 表面為{100}等價晶格平面之—斜面。 根據上述構想，本案所叙斜面製打法， 石晶體結構之半導體基板可為—石夕基板。 、中读鑽 根據上述構想，本輯叙斜面製造杨 擇性非均向姓刻係可為—濕钱刻。 、遺選 根據上述構想’本案所叙觸製如法， 該基板表面與該斜面之夾角控制在45度仏欲將 角度之範圍則需大於等於22度且小於45 ·;等^移 度但大於45度。 &專於68 鲁 /根據上㈣想’本案所述之斜面製造方法， 面係被運用為一光學反射面。 ”甲泫斜 根據上述構想，本案所述之斜面製造方法， 均向侧所使用之一侧液可按氫氧化鉀：水：非 所需之蝕刻速率比例混和而成。 /、醇依 根據上述構想’本案所述之斜面製造方法， 均向侧所使用之一爛液之溫度可 ^ =非 95度之範圍内。 增氏60度至 根據上述構想，本案所述之斜面製造方法， 均向侧進行時以—攪拌裝置將所使 麵=Silicon anisortropic etching in K〇H 七 〇ρ—the content of the paper, this case will not repeat them. In addition, a non-uniform etching is performed on a silicon wafer 201 having a surface of {100} equivalent lattice plane (as shown in the second figure (b)) (for example, the etching of a potassium hydroxide etching solution j24534〇 = :: : 第 (图 ^ 面面 面 ， 平面 的 表 点 ， ： 4 The following methods are used to try to improve the above-mentioned method. The lack of the plane is to change the top surface to the surface of the equivalent lattice surface. After cutting in the direction of the spring and the spring, a silicon wafer with a degree of angle between the lattice directions of the equivalent lattice plane of {1G ()} equivalent to t = D, which is produced by 9 74 ( For example, on the surface of the wafer 301, Jun Tai has a continuation mask (not shown in the figure) on the silicon engraved mask. The etch 3 " 5 〇3 " 397 μM and the substrate ; 〇〇 > The offset angle between the equivalent lattice directions is controlled at about 0 degrees. In this way, after passing = = such as hydroxide solution, _), we will be as ^ Figure (c) The surface shown is {ιιι} equivalent lattice plane = 45 ° inclined plane 101 'which is 45 degrees from the substrate surface 39 °: = inclined plane 380 will be at an angle of 64 · 4 degrees with the substrate surface 390. Therefore, by The figure above clearly shows that this The process requires special ^ beveling and cutting. The crystal rod is different from the general cutting method and must be specially ordered, and due to the lattice direction of the Shixi wafer itself, the two normal directions are not possible after the process is 7T I. ^, 45-degree inclined planes perpendicular to each other. Therefore, the present invention provides a process method that can greatly improve the flatness and overcome the lattice direction of the silicon wafer to produce a 45-degree inclined plane on both sides, which is the main purpose of developing this case. 1245340 [Summary of the invention] This case is a bevel manufacturing method applied to a semiconductor process. The manufacturing method includes the following steps: providing a semiconductor substrate with a crystal structure, the semiconductor substrate has a surface, and the surface is equivalent. A lattice plane is formed over the surface of the semiconductor substrate. A mask is formed on the mask. The Haiqian mask has a worm-carved window, and the remaining window has a side wall extending in a first direction and the first- There is an offset angle between the direction and the pulse-equivalent lattice direction of the semiconductor substrate, and the range of the offset angle is greater than or equal to 0 degrees and less than 45 degrees or less than or equal to 9G degrees but greater than the shirt degree. And using the secret mask and the _window contact substrate to select a non-uniform side (selected _Ca_Ca㈣, and then along the second direction on the substrate surface _out surface is ⑽) equivalent lattice One of the planes is an inclined plane. The other aspect of the case is a method of manufacturing an inclined plane, which is applied to a semi-conductor structure. The manufacturing method includes the following steps: providing a diamond crystal knot plate, the semi-conductive plate has a surface, and the surface is A rigid plane is formed above the surface of the semiconductor substrate. A shutter window is provided with a _ window, and the engraved window has a length greater than or equal to the angle of the semiconductor substrate. The range of the offset test is specialized in 0 degrees and less than 45 degrees and the use of __ and the axis engraving == fs W45 degrees; The surface of the substrate is etched with a surface of 1245340, which is one of the {100} equivalent lattice planes-an inclined plane. According to the above-mentioned concept, the semiconductor substrate with a crystal structure of stone in the slanting method described in this case may be a shixi substrate. According to the above-mentioned conception, this series of narrative bevels makes Yang. The selective non-uniform surname engraving can be-wet money engraving. According to the above conception, the selection is based on the concept described above. The angle between the substrate surface and the inclined surface is controlled at 45 degrees. If the angle is to be adjusted, the angle must be greater than or equal to 22 degrees and less than 45 degrees. 45 degree. & Specialized in 68 Lu / According to the method of manufacturing the inclined surface described in the above case, the surface is used as an optical reflecting surface. Formazan Oblique According to the above-mentioned concept, the method for manufacturing the bevel described in this case, one of the side liquids used on the side can be mixed at the ratio of potassium hydroxide: water: unwanted etching rate. /, Alcohol according to the above The concept of the manufacturing method of the inclined surface described in the present case is that the temperature of one of the rotten liquid used on the side can be within a range of not more than 95 degrees. From 60 degrees Celsius to the above-mentioned concept, the method of manufacturing the inclined surface described in the present case is uniform. When the side is carried out, the agitating device will make the surface =
=斷擾動’用以避免加熱過程中所產生之氣^ 斜面上而影響該斜面之平坦度。 者、W 【實施方式】 10 1245340 雖然本專利可應用於光通訊及光學儲存等各式 光學反射面的裝置，但在此以光學儲存為例來說明本專利 的應用。 請參見第四圖⑻(b)(c)，其係本案為改善上述習段 所發展出來可應用於半導體製程的斜面製造方法，首先广 為綱等價晶格平面之半導體基板 斜¥體基板5GG可时等•結構之 完成，然後再於該半導體基板5〇〇之表面上方 罩幕別，魏刻罩幕530上係利用一光罩經圖案轉換並 進订乾餘刻來形成一钱刻窗口 54〇，該钱刻窗口 5奶且有 及M，延伸之側壁549’而該第I向 D-D與祕板之·>等價晶格方向間 平^产大巾-貝晶格平面之微小平面出現而導致反射面 °因此本案將偏移角度之範圍調整 戶而於0度且小於45度或小於等於90度但大於45 t二縣例中’該偏移角度係、設為效果較均衡之22度。 j 口人再利用該選擇性非均向蝴咖& 卿κ ΖΓ 娜湖鄕置於—柄_液中進行 i、丙醇仿非均向蝕刻液之組成係可按氫氧化鉀:水： 中，，非二二之钱刻速率比例混和而成。而在钱刻過程 =非均向I虫刻液之溫度可加熱到攝氏6〇度至95度之 =’：外’侧時須以授拌裝置將該非均向侧液不 斷擾動’其目的在於避免加熱過程中所產生之氣泡附著於 11 1245340 所形狀特定角度斜面上而影響該斜面之平坦度。 分別Π Τι【:圖(C)係第四圖⑻中之半導體基板5。。 沿線之剖視圖。第四_中，_ 液利用蝕刻窗口 540各在兩側形成 ς 斜面550位於該半導體基 G之4’该 上，並與等價晶格平面夹4^之/1〇}等價晶格平面 中，姓難亦__窗口54()久^另外在第四_ cca ϋ σ在兩侧形成一斜面550 格平面夾45度角。 格+面上，並則_等價晶 同理’第五圖⑻與第五圖⑻係第五圖⑷中已具有—敍 SYS，的半導體基板經非均向_後，分別沿 體基板· ^咖，其巾純财ϋ 541與半導 第is—之<1〇〇>等價晶格方向的偏移角度為68度。在 550之刻液利用綱& 541各在兩側形成斜面 心a、l斜面550位於該半導體基板·表面之 夕卜=曰格平面上’並與_等價晶格平面夾45度角。另 五圖(c)中’該餘刻窗口 541各在兩側形成斜面別 的結構，該斜面550位於嗜车逡麯。 ^上述可知’本案之主要技術特徵在於仍然使用最常 择面為{1GG}等彳貝晶格平面之半導體基板，但避免使用 心Γί偏移角度來避免大量誘發晶相狀態較為穩定之011} 、貝曰曰格平面出現而導致反射面平坦度大幅下降之現象。 12 1245340 本案提出僅需將偏移角度調整成可為大 五小於t 蝕列n 專於90度但大於45度，便可有效改善 或^度^射面之平坦度。㈣巾偏移角度越接近0度 鱼所/ 了所形成之反射面平坦度越佳，但是該斜面550 声、0/ 45度斜面之誤差越大。反之，偏㈣度越接近45 雖_形成之斜面55〇與所需Μ度斜面之誤差較 斤形成之反射面平坦度卻較差，所以根據實作可知， ^ : 4基板表面與該斜面之夹角控制在45度+/]度時，該 移角度之範圍則需大於料22度且小於45度或小於等 於68度但大於45度。 、另外，忒蝕刻罩幕530的材料可為二氧化矽（Si〇2) ⑽N4)其中之—，因此可用氫氟酸來洗去舰 ^ 。而該半導體基板表面亦可改用{110}等價晶格平 面但此W第-方向便將調整為與該半導體基板之〈⑽〉 等價晶格方向間具有度則、於45度或小於等 於90度但大於45度之偏移角度，而侧出之斜面之表面 則為-{}等價晶格平面。相關作法與第四圖⑻⑻⑹與 第五圖⑻⑻⑻必無太大不@，可視為等效之改變，因此不 再請參見第六圖⑻(b)，其係平形設置兩個方向依本案 概念所設之蝕刻窗口 548、549的半導體基板5〇〇，該半導 體基板5GG表面之{}或{11G}或等價晶格平面，而钱刻 液利用蝕刻窗口 548、549各在兩側形成斜面55〇之結構^ 如此一來，本案可一次製作出平坦度大幅提高之雙側幻 13 1245340 度斜面，進而改善習用手段之缺失。 綜上所述’本案可以可應用於微機電系統 (Micro-Eelectro-Mechanical System，MEMS)半導體製程 及光電應用領域之製造上，雖然本發明已以較佳實施例揭 露如上，然其並非用以限定本發明，任何熟習此技藝者， 在不脫離本發明之精神和範圍内，當可作各種之更動與潤 飾，因此本發明之保護範圍當視後附之申請專利範圍 定者為準。 ！ 【圖式簡單說明】= Break disturbance 'is used to avoid the gas generated during the heating process ^ The inclined plane affects the flatness of the inclined plane. [Embodiment] 10 1245340 Although this patent can be applied to various types of optical reflecting surface devices such as optical communication and optical storage, the application of this patent will be described using optical storage as an example. Please refer to the fourth figure c (b) (c), which is an inclined surface manufacturing method developed in this case to improve the above-mentioned practice and which can be applied to the semiconductor process. First, a semiconductor substrate with a substantially equivalent lattice plane is slanted. 5GG can wait for the completion of the structure, and then mask on the surface of the semiconductor substrate 5000. The mask 530 on Wei carving uses a photomask to change the pattern and order the remaining time to form a money engraving window 54 〇, the money engraved window 5 milk and has M, extending side wall 549 'and the first direction DD and the secret plate of the > equivalent lattice direction is flat ^ production of scarves-small lattice plane plane The reflection surface ° caused by the appearance. Therefore, in this case, the range of the offset angle is adjusted to 0 degrees and less than 45 degrees or less than or equal to 90 degrees but greater than 45 t. In the two county examples, the offset angle is set to a more balanced effect. 22 degrees. J people re-use this selective anisotropic butterfly & Qing κ κ Γ the lake is placed in the-handle_ solution i, propanol-like anisotropic etching solution can be composed of potassium hydroxide: water: In China, the ratio of non-two-to-two money engraving rate is mixed. In the process of money carving = the temperature of the non-uniform I insect engraving liquid can be heated to 60 to 95 degrees Celsius = ': outside' side, the non-uniform side liquid must be continuously disturbed by a mixing device. The purpose is to Avoid the bubbles generated during the heating process from adhering to the specific angled slope of the shape of 11 1245340 and affecting the flatness of the slope. Π Ti [[Figure (C) is the semiconductor substrate 5 in the fourth figure). . Sectional view along the line. In the fourth _, liquid etching windows 540 are formed on both sides. Bevels 550 are located on the semiconductor substrate G ′, and are aligned with the equivalent lattice plane 4 ^ / 1/10} equivalent lattice plane. In the last name, it is difficult to __window 54 () for a long time ^ In addition, in the fourth _ cca ϋ σ on both sides forms a beveled 550 grid plane with a 45-degree angle. On the grid + plane, the equivalence _ is equivalent to the same principle. The fifth and fifth images (see Figure 5 and Figure 5) have semiconductor substrates that have-SYS, after they are non-uniform, respectively, along the body substrate. ^ Coffee, the deviation angle of the pure lattice 541 and the semi-conducting is-the equivalent lattice direction is 68 degrees. At 550, the etching solution U.S.A. & 541 forms bevels on both sides. The bevels 550 are located on the surface of the semiconductor substrate and on the grid plane, and are at an angle of 45 degrees with the equivalent lattice plane. In the other five figures (c), the windows 541 each have a beveled structure on both sides, and the beveled surface 550 is located in the car-like curvature. ^ It can be known from the above that the main technical feature of this case is that the semiconductor substrate with the most commonly selected plane being the {1GG} plane such as the cymbal lattice plane is still used, but the use of the center shift angle is avoided to avoid a large amount of 011 that induces a relatively stable crystalline phase state} The phenomenon that the flatness of the grid surface causes the flatness of the reflective surface to decrease significantly. 12 1245340 This case proposes that only the offset angle needs to be adjusted to be large, less than t, and the etch line n is specialized in 90 degrees but greater than 45 degrees, which can effectively improve the flatness of the projection surface. The closer the towel shift angle is to 0 degrees, the better the flatness of the reflective surface formed by the fish / battery, but the larger the error of the 550 sounds of the inclined surface and the 0 / 45-degree inclined surface is. On the contrary, the closer the skewness is to 45, although the error between the _ formed inclined surface 55 and the required M-degree inclined surface is flatter than that of the reflective surface formed by the catty, it can be known from practice that ^: 4 between the substrate surface and the inclined surface When the angle is controlled at 45 degrees + /] degrees, the range of the shift angle needs to be greater than 22 degrees and less than 45 degrees or less than or equal to 68 degrees but greater than 45 degrees. In addition, the material of the sacrificial etching mask 530 may be one of silicon dioxide (SiO 2) N 4), so the hydrofluoric acid can be used to wash the ship ^. The surface of the semiconductor substrate can also be changed to the {110} equivalent lattice plane, but the W-direction will be adjusted to have a degree between the equivalent lattice direction of the semiconductor substrate (⑽), at 45 degrees or less An offset angle equal to 90 degrees but greater than 45 degrees, and the surface of the side slope is-{} equivalent lattice plane. The related method must not be too different from the fourth and fifth pictures, which can be regarded as equivalent changes. Therefore, no longer refer to the sixth picture (b), which is set in two directions according to the concept of this case. A semiconductor substrate 500 with an etching window 548 and 549 is provided. The surface of the semiconductor substrate 5GG is {} or {11G} or an equivalent lattice plane, and the etching liquid uses the etching windows 548 and 549 to form inclined surfaces 55 on both sides. The structure of 〇 ^ In this way, this case can produce a double-sided magic 13 1245340-degree inclined plane with greatly improved flatness at one time, thereby improving the lack of conventional means. In summary, 'this case can be applied to the manufacturing of micro-Eelectro-Mechanical System (MEMS) semiconductor processes and optoelectronic applications. Although the present invention has been disclosed as above with preferred embodiments, it is not intended for Limiting the present invention, anyone skilled in the art can make various modifications and retouches without departing from the spirit and scope of the present invention. Therefore, the scope of protection of the present invention shall be determined by the scope of the attached patent application. !! [Schematic description]
本案得藉由下列圖式及詳細說明，俾得一更深入 解： J f圖。)(b)所7^是習知技藝中傳統光學讀g頭中利用ζ 射面之單-雷射辆封裝結構*賴。 一This case can be obtained by the following diagrams and detailed descriptions for a deeper understanding: J f diagram. ) (b) 7 ^ is a single-laser vehicle package structure using the ζ radiation surface in the conventional optical reading head in the conventional art. One
係顯示f知技藝巾職—45度斜面石 54·74度斜面之過程示意圖。 第三圖（a)(b)(c)係 „ λ ^ ^ 之過程示賴/如另1知技蟄巾形成—45度斜运 =其係本案為改善上述f时段所發展出來 ^Γ' ' —製程的斜面製造方法過程示意圖。 可應用於半係核為改4上述f財段所發展出來 第六圖_，，=另一斜面製造方法過程示意圖。 ，、係本案為改善上述習用手段所發展出來 14 1245340 可應用於半_製軸雙斜轉造方法過程示意圖 【主要元件符號說明】 本案圖式中所包含之各元件列示如下 矽基板100 光接受器103 45度斜面1〇1 矽晶圓201 側壁298 45度斜面ιοί 晶棒300 茲刻窗口 399 <1〇〇>等價晶格方向397 斜面380 蝕刻罩幕530 側壁549 雷射二極體102 雷射光104 晶棒200It is a schematic diagram showing the process of the 45-degree bevel stone at 54 ° and 74 ° bevel. The third picture (a) (b) (c) shows the process of λ ^ ^ / as in the formation of another known technology -45 degree oblique transport = This case was developed to improve the above f period ^ Γ ' '— Schematic diagram of the manufacturing process of the inclined plane. It can be applied to the sixth diagram developed by the semi-core system to modify the above-mentioned f financial paragraph. _, = Another schematic diagram of the manufacturing process of the inclined plane. This case is to improve the above-mentioned conventional means. The developed 14 1245340 can be applied to the semi-shaft dual-slanting method. Schematic description of the main component symbols. The components included in the scheme of this case are listed below. Silicon substrate 100 Photoreceptor 103 45 ° inclined surface 1〇1 Silicon wafer 201 sidewall 298 45-degree beveled ingot 300 engraved window 399 < 1〇〇 > equivalent lattice direction 397 bevel 380 etching mask 530 sidewall 549 laser diode 102 laser light 104 ingot 200
飿刻窗口 299 <100>等價晶格方向297 54·74度斜面199 矽晶圓301 側壁398 基板表面390 半導體基板500 名虫刻窗口 540、541、548、549Engraved window 299 < 100 > Equivalent lattice direction 297 54 · 74 degree bevel 199 Silicon wafer 301 Side wall 398 Substrate surface 390 Semiconductor substrate 500 Insect carved window 540, 541, 548, 549
斜面550 15Bevel 550 15