TW200610048A - Method for creating slant in semiconductor manufacturing process - Google Patents

Method for creating slant in semiconductor manufacturing process

Info

Publication number
TW200610048A
TW200610048A TW093127925A TW93127925A TW200610048A TW 200610048 A TW200610048 A TW 200610048A TW 093127925 A TW093127925 A TW 093127925A TW 93127925 A TW93127925 A TW 93127925A TW 200610048 A TW200610048 A TW 200610048A
Authority
TW
Taiwan
Prior art keywords
etching
slant
creating
manufacturing process
degrees
Prior art date
Application number
TW093127925A
Other languages
Chinese (zh)
Other versions
TWI245340B (en
Inventor
An-Nong Wen
Chun-Jui Lee
Mao-Jen Wu
Chun-Wen Chang
Original Assignee
Neostones Microfabrication Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Neostones Microfabrication Corp filed Critical Neostones Microfabrication Corp
Priority to TW93127925A priority Critical patent/TWI245340B/en
Priority to JP2005036761A priority patent/JP4707173B2/en
Application granted granted Critical
Publication of TWI245340B publication Critical patent/TWI245340B/en
Publication of TW200610048A publication Critical patent/TW200610048A/en

Links

Landscapes

  • Weting (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

A method for creating slant in a semiconductor manufacturing process, includes steps of providing a semiconductor substrate of a diamond crystalline structure, which has a plane equivalent to (100) or (110) lattice; forming an etching mask having an etching window on the plane, wherein the etching window has a side wall extending along a first direction that has a bias angle greater than or equal to 0 degree but less than 45 degrees or less than or equal to 90 degrees but greater than 45 degrees with the equivalent lattic direction; and performing a selective and anisotropic etching procedure on the substrate by using the etching mask and etching window, thereby etching a slant with (100) or (110) equivalent lattice in the first direction.
TW93127925A 2004-09-15 2004-09-15 Method for creating slant in semiconductor manufacturing process TWI245340B (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
TW93127925A TWI245340B (en) 2004-09-15 2004-09-15 Method for creating slant in semiconductor manufacturing process
JP2005036761A JP4707173B2 (en) 2004-09-15 2005-02-14 Method for forming a specific crystallographically equivalent surface of a silicon substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW93127925A TWI245340B (en) 2004-09-15 2004-09-15 Method for creating slant in semiconductor manufacturing process

Publications (2)

Publication Number Publication Date
TWI245340B TWI245340B (en) 2005-12-11
TW200610048A true TW200610048A (en) 2006-03-16

Family

ID=36164700

Family Applications (1)

Application Number Title Priority Date Filing Date
TW93127925A TWI245340B (en) 2004-09-15 2004-09-15 Method for creating slant in semiconductor manufacturing process

Country Status (2)

Country Link
JP (1) JP4707173B2 (en)
TW (1) TWI245340B (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201108332A (en) * 2009-08-27 2011-03-01 Univ Nat Central Package base structure and related manufacturing method
JP6217706B2 (en) 2015-07-29 2017-10-25 日亜化学工業株式会社 Optical member manufacturing method, semiconductor laser device manufacturing method, and semiconductor laser device
JP6354704B2 (en) 2015-08-25 2018-07-11 日亜化学工業株式会社 Optical member manufacturing method, semiconductor laser device manufacturing method, and semiconductor laser device
CN106990461B (en) * 2016-01-20 2020-05-15 安徽中科米微电子技术有限公司 Silicon echelle grating with right angle and vertex angle and manufacturing method thereof
JP6631609B2 (en) * 2017-09-26 2020-01-15 日亜化学工業株式会社 Method for manufacturing semiconductor laser device

Also Published As

Publication number Publication date
JP4707173B2 (en) 2011-06-22
TWI245340B (en) 2005-12-11
JP2006086492A (en) 2006-03-30

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