TW200610048A - Method for creating slant in semiconductor manufacturing process - Google Patents
Method for creating slant in semiconductor manufacturing processInfo
- Publication number
- TW200610048A TW200610048A TW093127925A TW93127925A TW200610048A TW 200610048 A TW200610048 A TW 200610048A TW 093127925 A TW093127925 A TW 093127925A TW 93127925 A TW93127925 A TW 93127925A TW 200610048 A TW200610048 A TW 200610048A
- Authority
- TW
- Taiwan
- Prior art keywords
- etching
- slant
- creating
- manufacturing process
- degrees
- Prior art date
Links
Landscapes
- Weting (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Drying Of Semiconductors (AREA)
Abstract
A method for creating slant in a semiconductor manufacturing process, includes steps of providing a semiconductor substrate of a diamond crystalline structure, which has a plane equivalent to (100) or (110) lattice; forming an etching mask having an etching window on the plane, wherein the etching window has a side wall extending along a first direction that has a bias angle greater than or equal to 0 degree but less than 45 degrees or less than or equal to 90 degrees but greater than 45 degrees with the equivalent lattic direction; and performing a selective and anisotropic etching procedure on the substrate by using the etching mask and etching window, thereby etching a slant with (100) or (110) equivalent lattice in the first direction.
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW93127925A TWI245340B (en) | 2004-09-15 | 2004-09-15 | Method for creating slant in semiconductor manufacturing process |
JP2005036761A JP4707173B2 (en) | 2004-09-15 | 2005-02-14 | Method for forming a specific crystallographically equivalent surface of a silicon substrate |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW93127925A TWI245340B (en) | 2004-09-15 | 2004-09-15 | Method for creating slant in semiconductor manufacturing process |
Publications (2)
Publication Number | Publication Date |
---|---|
TWI245340B TWI245340B (en) | 2005-12-11 |
TW200610048A true TW200610048A (en) | 2006-03-16 |
Family
ID=36164700
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW93127925A TWI245340B (en) | 2004-09-15 | 2004-09-15 | Method for creating slant in semiconductor manufacturing process |
Country Status (2)
Country | Link |
---|---|
JP (1) | JP4707173B2 (en) |
TW (1) | TWI245340B (en) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW201108332A (en) * | 2009-08-27 | 2011-03-01 | Univ Nat Central | Package base structure and related manufacturing method |
JP6217706B2 (en) | 2015-07-29 | 2017-10-25 | 日亜化学工業株式会社 | Optical member manufacturing method, semiconductor laser device manufacturing method, and semiconductor laser device |
JP6354704B2 (en) | 2015-08-25 | 2018-07-11 | 日亜化学工業株式会社 | Optical member manufacturing method, semiconductor laser device manufacturing method, and semiconductor laser device |
CN106990461B (en) * | 2016-01-20 | 2020-05-15 | 安徽中科米微电子技术有限公司 | Silicon echelle grating with right angle and vertex angle and manufacturing method thereof |
JP6631609B2 (en) * | 2017-09-26 | 2020-01-15 | 日亜化学工業株式会社 | Method for manufacturing semiconductor laser device |
-
2004
- 2004-09-15 TW TW93127925A patent/TWI245340B/en active
-
2005
- 2005-02-14 JP JP2005036761A patent/JP4707173B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
JP4707173B2 (en) | 2011-06-22 |
TWI245340B (en) | 2005-12-11 |
JP2006086492A (en) | 2006-03-30 |
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