TWI242593B - Adhesive tape for semiconductor apparatus - Google Patents
Adhesive tape for semiconductor apparatus Download PDFInfo
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- TWI242593B TWI242593B TW092131052A TW92131052A TWI242593B TW I242593 B TWI242593 B TW I242593B TW 092131052 A TW092131052 A TW 092131052A TW 92131052 A TW92131052 A TW 92131052A TW I242593 B TWI242593 B TW I242593B
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- adhesive layer
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- resin
- thermosetting
- thickness
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Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/071—Connecting or disconnecting
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
- C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
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- Adhesive Tapes (AREA)
- Adhesives Or Adhesive Processes (AREA)
- Die Bonding (AREA)
Abstract
Description
1242593 玖、潑明說明 [發明所屬之技術領域] 本發明係關於一種半導體裝置用黏著片帶,可用於半 導體裝置之組合工程,係適用於裝置之高密度構裝之捲帶 式自動接合(TAB : Tape Automated Bonding)方式使用之 TAB用黏著片帶;適用於球狀栅極陣列(bga : &id A-y)、芯片級封裝(CSP: Chip Sca】e pack 者片帶;導線架(lead frame)固定用黏著片帶;以及將導線 架與軟片輸送膠帶以引線接合法連接之方式等,尤其是適 用於表面構裝型半導體裝置者。 ^ [先前技術] 近平來,對 輕;E之構裝密度高之半導體 裝置的要求日漸增高’構成電子元件核心、之針多㈣(半導 Γ : t)路)封H以往之周邊連接型陸續轉變為被稱為 區域連接型BGA、CSP之可高密度構裝之Ic封裝。 繼以及CSP係在封裝内面設置表面格子狀之錫球作 為連接外部之端子。Ic形成構裝於為了再佈線之電路基板 :下:冉為再佈線基板)之IC封裝(BGa、csp),被構農在硬 貝印刷基板等之主基板中。1242593 说明, Po Ming explanation [Technical field to which the invention belongs] The present invention relates to an adhesive tape for semiconductor devices, which can be used in the combined engineering of semiconductor devices, and is a tape-and-tape automatic bonding (TAB) suitable for high-density construction of devices. : Tape Automated Bonding) TAB adhesive tape; suitable for ball grid array (bga: & id Ay), chip scale package (CSP: Chip Sca) e pack; tape; lead frame ) Fixing adhesive tape; and the method of connecting the lead frame and the film conveying tape by wire bonding, etc., especially suitable for surface-mounted semiconductor devices. ^ [Prior art] Nearly flat, light; E of The requirements for high-density semiconductor devices are increasing. The core of electronic components and the number of pins (semiconducting Γ: t) are closed. The conventional peripheral connection type has gradually changed to the area connection type BGA and CSP. High-density Ic package. Following the CSP, a surface grid-shaped solder ball is provided on the inside of the package as a terminal for connection to the outside. Ic is formed on an IC package (BGa, csp) mounted on a circuit substrate for rewiring (bottom: Ran rewiring substrate), and is constructed in a main substrate such as a rigid printed circuit board.
Rr嶋係依再佈線基板之種類,大致分為剛性塑膠 A(P-BGA)與軟性薄膜BGA(T BGA)。在Τ Β以中,便有 =以^ ΤΑΒΘ之内部引線糊ILB: h取山ad Bonding) h之與鲜線接合⑼⑽—㈡方式之型式叫复者更 315196 5 1242593 稱為精密間距球狀柵極陣列構裝體(fbga : Fine pitch BaiiRr 嶋 is roughly classified into rigid plastic A (P-BGA) and flexible film BGA (T BGA) according to the type of rewiring substrate. In T B, there are = internal lead paste ILB with ^ ΤΑΒΘ: h take the mountain ad Bonding) h is connected to the fresh line ⑼⑽—㈡ The type is called Fu Zeng Geng 315196 5 1242593 is called precision pitch ball grid Fbga: Fine pitch Baii
Grid Array)或軟性薄膜晶片尺寸構裝體(T_csp ·Grid Array) or flexible film wafer size structure (T_csp ·
Size Package) ° 以往,上述BGA之再佈線基板係以玻璃環氧基板等硬 貝土板為± 而近年來隨著行動電話等的普及,遂對 摩二里薄5L化之要求提尚’而且一般而言由製作高密度之 佈線亦比硬質基板容易,所以軟性薄膜基板漸變為主流, 而使用該軟性薄膜基板之T_BGA(Tcp型以及銲線接合方 式之FBGA或丁-CSP)廣被採用。尤其Tcsp由以往MW之 扇出(Fan⑽)方式改為扇人_⑷方式便可實現小型 化、構裝面積之縮小化,可期待今後將更為擴展。 士上述之可用於该等TAB方式之封裝(Tcp)、叩〇 a之 土板係使用”由‘著劑使金屬箔層積於聚醯亞胺薄膜而 成者戶斤U纟中所使用之黏著劑便被要求具有可 黏著性。 又, 等連接軟 軟性薄膜 自黏著工 由於軟性 劑在高溫 而且 要具有一 緣性信賴 關二銲線接合方式之T_csp,在銲接中,以金線 性薄膜基板上所設置1C晶片上之鋁電極部與TAE 基板^電極佈線部(墼部)之際,由於高溫以及來 具之壓力’便要求黏著劑在高溫中之硬度。亦即, 薄膜基板具有優良之銲線接合性,而便要求黏著 中具有某種程度的硬度。 在軟性 >專膜基板中,由於為封裝用基板,便需 般之沿龢(ren〇w)等之構裝性以及銅遷移等之絕 性以及其它之信賴性。 6 1242593 以往之上述黏著劑,係使用含有熱硬化樹 脂_(丙烯腈· 丁二料聚物)系黏著劑(日本專物= “_虎公報第2至5頁)及饥系黏著劑。其中亦以^ =7系之㈣㈣低價、易於使用等,並不限於^述 基板而廣泛地被使用。鈇 ..^ • ',、'而,使用%氧樹脂/NBR系黏著劑 之孝人性薄膜基板在録轉接人士 在知、’泉接ό日寸,因NBR的柔度使得墼 沈,金屬線不附著於堅部等銲線接合性之問題存在。而且, 錢時間的溫度變化及高溫高濕度下,存在有耐迴谭性、 銲線接合以及絕緣性之門,上 ^ 問喊。廷是因為NBR係以二烯化人 Γ乍為起始原料之故,長時間曝露於高溫中使含於主鏈: 又:因氧化而裂開,逐漸喪失彈性,應力緩和效果漸失, l 運接U性寺問題的原因。而且,佈吟 基板之精密間距化更精進時,古、θ 、'泉 丙稀腈基對銅離子的吸附等,將Τ ’由於職之 丁日J及W寺,將產生銅遷移問題。 [發明内容] 本發明之目的係為解決以往黏著劑所具有之問題,亦 二係為提供具有優異鮮線接合性之半導體裝置用黏著片 ^以往認為半導體裝置用黏著片帶之銲線接合性係僅由 母者制之儲存模量決定。黏著劑之厚度亦規定為一般之厚 度,但這樣並不是基於銲線接合性之考量而設定的。 桓旦經t案發7人等專心致志研討之結果,得知即使儲存 才果里及扣、失模置低,σ要栋对笨卞 道^ /、要使‘者劑之厚度變薄便能改善半 、月丑Κ置用‘著軟性薄膜之銲線接合性。 315)96 1242593 亦即,本發明之半導 培μ @ & 千¥月豆I置用黏著片帶係一種具有絕 、、彖n 4膜與在該絕緣 ^ R 、 溥胺之至^、一面上裝設熱硬化性黏 ^之半導體裝置用黏著片帶,其特徵係:將上述熱硬 ::黏著劑層的厚度之倒數與在熱硬化後之熱硬化性黏著 別層於2 0 〇。〇下之指生y b a + 之彳貝失板1相乘所得之積大於〇25MPa/ m者。 μ 而且,在本發明之半導體褒置用黏著片帶中,將上述 熱硬化性黏著劑声i声 , 9又之倒數與在熱硬化後之熱硬化性黏 者劑層於200。〇下之儲在描曰仏牛 i广您谜存杈1相乘所得之積,最好是大於j MPa/ // m者。 又,上述熱硬化性黏著劑層係含有聚醯胺樹脂,該聚 S“女取好是使用碳原子數36之不飽和脂肪酸二聚物所製得 者。 1 又上述妷原子數3 6之不飽和脂肪酸二聚物最好 用亞油酸所製得者。 [實施方式] (發明實施之最佳形態) 以下,詳細說明本發明。 (半導體裝置用黏著片帶) 本發明之半導體裝置用黏著月帶,係在絕緣性薄膜之 至少一面上形成熱硬化性黏著劑層者,熱硬化性黏著劑層 的厚度(// m)之倒數與硬化後之熱硬化性黏著劑層於2㈧。^ 下之損失模量(MPa)相乘所得之積(損失模量χ iy厚度)係大 於 〇.25MPa/# m者。 、 1242593 (絕緣性薄膜) 本發明之絕緣性薄膜係具有電氣絕 性薄膜可使用❹我、,,邑緣 乂妝 水對本一甲酸乙二醇酯、 聚坤fe、聚酸胺酸亞脫 ^ 卜— 亞月女聚醚醯亞胺、聚笨硫醚、聚醚_ ==。其中以聚酿亞胺薄膜最具優異之絕緣性及耐敎 性^酿亞胺為市售品,以使用東麗.杜邦公司、 之商品名―聚醯亞胺)、宇部興產公司之商。名Size Package) ° In the past, the redistribution substrates of the above BGAs were made of hard slabs such as glass epoxy substrates. In recent years, with the popularization of mobile phones, the demand for 5L thinning of Mo Erli has been raised. Generally speaking, making high-density wiring is also easier than rigid substrates, so flexible thin-film substrates have become mainstream. T_BGA (Tcp-type and FBGA or Ding-CSP) using this flexible thin-film substrate is widely used. In particular, Tcsp has been changed from the FanMW method of the previous MW to the Fan__ method to achieve miniaturization and reduction of the installation area. It can be expected to expand further in the future. The above-mentioned can be used in the TAB method of packaging (Tcp), 叩 〇a for the use of the soil sheet system "by the" coating agent "metal foil laminated on the polyimide film used in households U 纟Adhesives are required to have tackiness. In addition, since the softener is self-adhesive at the connection temperature, because the softener is at a high temperature and has a margin of trust, the T_csp of the bonding wire bonding method is used. In welding, a gold linear film substrate is used. When the aluminum electrode portion on the 1C wafer and the TAE substrate ^ electrode wiring portion (the ridge portion) are provided, the hardness of the adhesive at high temperatures is required due to the high temperature and the pressure applied. That is, the thin film substrate has excellent Bonding wire bonding requires a certain degree of hardness during adhesion. In soft & special film substrates, since it is a packaging substrate, it requires structural properties such as general edge and copper, and copper. Migration and other reliability and other reliability. 6 1242593 Conventional adhesives mentioned above are based on thermosetting resin_ (acrylonitrile · butadiene polymer) -based adhesives (Japanese patent = "_Tiger bulletin No. 2" To page 5) and hungry adhesion . Among them, ^ = 7 is cheap, easy to use, etc., and is not limited to ^ substrates and is widely used.鈇 .. ^ • ',,' And the filial piety film substrate using% oxygen resin / NBR-based adhesives is being recorded by people who know, 'Spring is connected, because the flexibility of NBR makes the heavy, metal wire There is a problem that the bonding property of the bonding wire is not adhered to the solid part. In addition, under the temperature change of time and high temperature and high humidity, there are doors with resistance to tanning, wire bonding, and insulation. The reason is that NBR is based on the diene alkylated manganese as the starting material. After being exposed to high temperature for a long time, it is contained in the main chain: Also: It is cracked due to oxidation, gradually loses its elasticity, and the stress relaxation effect is gradually lost. The reason for the problem of transporting U-shaped temples. In addition, when the fine pitch of the cloth substrate is further advanced, the adsorption of copper ions by ancient, θ, and quaternary acrylonitrile groups, etc., will cause copper migration problems due to the roles of Ding J and W Temple. [Summary of the Invention] The purpose of the present invention is to solve the problems of conventional adhesives, and to provide an adhesive sheet for semiconductor devices with excellent fresh wire bonding. It is only determined by the storage modulus of the parent system. The thickness of the adhesive is also specified as a general thickness, but this is not set based on the consideration of the bondability of the wire. According to the results of the dedicated study and discussions conducted by the 7 people in the case of Tan Dan T, it was learned that even if the storage is completed, the buckle and the mold loss are set low, σ should be fooled by the clumsy ^ /, and the thickness of the agent must be reduced. Improving the wire bonding property of soft film for semi-monthly and month-old KK. 315) 96 1242593 That is, the semiconducting μ @ of the present invention is a kind of adhesive tape with a insulation film, 彖 n 4 film, and the insulation ^ R, amine, and ^, A thermosetting adhesive tape for semiconductor devices is provided on one side, which is characterized in that: the inverse of the thickness of the above thermosetting :: adhesive layer and the thermosetting adhesive layer after the thermosetting are added to 20 〇 . The product below 〇 refers to the product obtained by multiplying the product of y b a + by the loss of plate 1 more than 0.25 MPa / m. In the adhesive sheet for semiconductor placement of the present invention, the above-mentioned thermosetting adhesive sound, the reciprocal of 9 and the thermosetting adhesive after the thermosetting are layered at 200. The product stored below is stored in the description of the yak, and the product of your puzzle 1 is preferably greater than j MPa / // m. The thermosetting adhesive layer contains a polyamide resin, and the polystyrene resin is preferably obtained by using an unsaturated fatty acid dimer having 36 carbon atoms. The unsaturated fatty acid dimer is preferably made of linoleic acid. [Embodiment] (Best Mode for Implementing the Invention) The present invention will be described in detail below. (Adhesive Tape for Semiconductor Device) For the semiconductor device of the present invention Adhesive moon belts are those that form a thermosetting adhesive layer on at least one side of the insulating film. The inverse of the thickness (// m) of the thermosetting adhesive layer and the thermosetting adhesive layer after curing are at 2㈧. ^ The product obtained by multiplying the loss modulus (MPa) below (loss modulus χ iy thickness) is greater than 0.25 MPa / # m., 1242593 (insulating film) The insulating film of the present invention has electrical insulation The film can be made of ❹, ,, 乂, 乂, 乂, 乂, 乂, 乂, 乂, 乂, 乂, 乂, 乂, 坤, 坤, 坤, 聚, 亚, 聚, 聚, ——female polyether 醯 imine, polybenzyl sulfide, polyether _ ==. Among them, polyimide film has the best insulation and resistance to rubidium. Sex ^ imine is a commercially available product, using the trade name of Toray DuPont Co., Ltd. (Polyimide), Ube Kosan Co., Ltd.
Upilex(取聯苯…亞胺)、鐘淵化學工業公司之商:名 Apical(聚醯亞胺)等者為佳。 °口石 緣性薄膜之厚度係以2—G"m為佳以^ =5”為更佳。絕緣性薄膜之厚度不滿 严於,〇〇 士 寺口更度不夠而使攜帶性變差,但如 尽方,則難以得到小型之半導體裝置。 (熱硬化性黏著劑層) 本發明中之熱硬化性黏著劑層 質之黏著劑所形成之層。 口魚而具有硬化性 熱而本發明之熱硬化性黏著劑声 (”)之倒數與熱硬化 ;I’係將該厚度 才貝失拉i(MPa)相乘所得之積(損失模 之 〇.25MPa///_。總之,損失 ]/居度)大於 變每,你叮4日 > 低同日$黏著劑之厚度 又厚,便可提南銲線接合性。所以, 子度 劑層之損失模量與黏著劑層之厚度的㈣ 由黏著 決定。較理想的是熱硬爾著;斤得… λν ^ ^ 9之居度的倒數愈敎石φ 化伖之熱硬化性黏著劑層於2 …'更 L中之損失模量相乘所得 315]96 9 1242593 之積在0.6MPa///m以上者。 熱硬化性黏著劑層之厚度的倒數與熱硬化後之埶硬化 性黏著劑於2〇〇°C下之捐尖楛旦知千 < … 卜里相乘所得之積為⑽他/ ^以下日r則在銲線接合步驟時金線不附著於m 1金線與壁部並未完全連接,因此在銲線接合步驟後,將 左右之低溫昇至所設定的:式二熱=後係一 熱處理小時左右者。為達成::者更Γ°至⑽下 π咬从丄返者,亦可藉由 脂、聚醒胺酿亞胺樹脂、聚酿亞胺樹脂等低分子 里之反應性物質,以及使含有驗樹 性物質而實現之。 衣虱树鈿寻之硬化 :硬::性點著劑層之厚度如考量到對電 入性及黏著力,則以仏以上為佳,此時 之領失杈置可為0 75MJPa 之靜模量高時,在考旦心 熱硬化性黏著劑層 脹及靜模量不同而容易發生捲曲等現 彳 時,便期待熱硬化性黏著劑層之厚度為薄者/物化 之熱:::黏硬:黏f劑層厚度(”)之_ (儲存模θ '者Θ層方;200 c下之儲存模量相乘所得之積 :广數與熱硬化後之熱硬化性黏著劑層在2。。 線接人^模量相乘所得之積為着以了時,則在鲜 Ά“寺,莫隹以將金線與墼部充分連接。 更化!生夺占者劍層厚度之倒數與熱硬化後之熱硬化性 ]〇 315196 1242593 黏著劑層於200 °C中之儲存模量相乘所得之積尤以大於 3MPa//z m者為佳,更以大於1〇Mpa/// m者為更佳。為實現 上述者,可藉由聚醯胺樹脂及酚樹脂等之交聯點間分子量 為小,在常溫中使熱硬化性黏著劑層含有高模量之樹脂而 達成。 在此,損失模量以及儲存模量可由動態機械分析儀 (DMA: Dynamic Mechanical Analyzer)>#,j^ 〇 ^ ^ ^ 量以及儲存模量之測定條件等則於實施例中說明。 、 (黏著劑層用材料) 熱硬化性黏著劑層所使用之黏著劑層用材料係因孰而 具有硬化性質之黏著劑,該材料可例舉如:聚酿胺樹脂以 及含有硬化性樹脂者。 (聚醯胺樹脂) 聚酿胺樹脂好係藉由碳原子數4以上之脂肪族二胺與 不&和月曰肪酸二聚物之稠合所合成者。此 以上之脂肪族-脍夕目姊y t 厌屌于数4 矢—月女之具體例可列舉如:丁二胺、戊二胺、 =、二二Γ、癸二胺、十二烧雙胺等。其中,以碳原 …、之月曰肪族二胺為佳,以碳原子數4至12之脂肪族 一胺為更佳’又以碳原子數6至12之脂肪族一胺為 、 此,以使用碳原早封4… 矢一月女為取佳。如 肪族二胺,埶砀仆+ 刀子者)之月日 … 匕性‘著劑層在高溫時亦呈示g f 性),且因呈示高气装士 m 丁间黏度(黏者 门站者力因而可得到與絕緣性 密著力。…含聚_脂…化良好之 濕熱時,Φ可成—吏化以㈣層即使於 •、’、仔到阿絕緣性且熱收縮為低者。 π 315196 1242593 不餘和脂肪酸二聚物係碳原子數36者因可挽性及運接 ==性之點而適合使用。碳原子數36之不㈣ 永物h可將碳原子數18之不和脂肪酸稠合而得者。該 石厌原=數18之不飽和脂肪酸可舉例如:油酸、亞油酸、亞 麻酸等。其中,尤其亦以亞油酸因易於將上述(損失模量x 所^度)调整為大於〇.25MPa/# m者而佳。更以由Μ」至 貝里之亞油酸盘〇1至暂旦 ” 至2〇貝里%之油酸或亞麻酸所組成者 為佳。 並且,在合成聚醯胺樹脂之際,除了碳原子數4以上之 2肪酸二胺與不飽和脂肪酸二聚物以外,亦可使用少量三 官能以上之酸成份、三官能以上之胺成分作為副成份以合 成2支狀之聚醯胺樹脂。副成分之三官能以上之酸成分(或 三官能以上之胺成分)係以在聚醯胺樹脂中之全酸成分(或 全胺成分)之20莫耳%以内者為佳,1〇莫耳%以内更佳。副 成份若超過20莫耳%時’硬化後之熱硬化性黏著劑層之可 撓性變差。 以對/合J之/合解性等之觀點,聚醯胺樹脂之質量平均 分子量係以5〇0至50,000為佳,以^⑼至“…⑽為更佳。質 量平均分子量係依凝膠滲透層析法(Gpc :以]permeatjngUpilex (from biphenyl ... imine), Zhongyuan Chemical Industry Co., Ltd .: Apical (Polyimine), etc. are preferred. The thickness of the stone-edge film is 2—G " m is better, ^ = 5 "is more preferable. The thickness of the insulation film is not stricter than that of the 〇 士 寺 口, which makes the portability worse, but It is difficult to obtain a small-sized semiconductor device if everything is done. (Thermosetting adhesive layer) The layer formed by the adhesive of the layer of the thermosetting adhesive in the present invention. The inverse of the sound (") of the thermosetting adhesive and the thermosetting; I 'is the product of the thickness of the thickness of the thickness of the product (i.e. MPa). (In short, loss] / Dwelling) is greater than the change, you bite 4 days > low on the same day $ the thickness of the adhesive is thick and thick, you can improve the bondability of the south wire. Therefore, the 模 of the loss modulus of the agent layer and the thickness of the adhesive layer is determined by the adhesion. The ideal is a thermal hard work; jin… λν ^ ^ 9 The inverse of the ochre ochre φ 伖 chemical heat hardening adhesive layer at 2… 'more L multiplied by the loss modulus in 315] The product of 96 9 1242593 is above 0.6MPa /// m. The product of the reciprocal of the thickness of the thermosetting adhesive layer and the temperature of the thermosetting adhesive at 2000 ° C. The product obtained by multiplying the value of 卜 is equal to or less than ^ / ^ In the case of r, the gold wire is not attached to the m 1 wire during the wire bonding step, and the gold wire is not completely connected to the wall. Therefore, after the wire bonding step, the left and right low temperatures are raised to the set value: One heat treatment hour or so. In order to achieve: from Γ ° to below π bite from returning, you can also use low-molecular reactive substances such as fat, polyimide resin, polyimide resin, and the content of Tree material. The hardening of the lice tree: hard :: The thickness of the sex point agent layer, if taking into account the electric penetration and adhesive force, it is better to be more than 仏, at this time the collar loss can be set to 0 75MJPa static mode When the amount is high, when the swell of the thermosetting adhesive layer of the test heart and the static modulus are different, and it is easy to curl, it is expected that the thickness of the thermosetting adhesive layer is thin / heat of physical material ::: sticky Hard: The thickness of the adhesive layer thickness (") _ (storage mode θ 'is Θ layer square; the product obtained by multiplying the storage modulus at 200 c: the broad number and the thermosetting adhesive layer after heat curing are at 2 When the product obtained by multiplying the modulus of the line by the people is enough, in the fresh temple, Mo Yan fully connected the gold wire to the crotch. Change! The reciprocal of the thickness of the sword layer Thermal hardening after thermal hardening] 〇315196 1242593 The product obtained by multiplying the storage modulus of the adhesive layer at 200 ° C is particularly preferably greater than 3MPa // zm, and more preferably greater than 10Mpa /// m In order to achieve the above, the molecular weight between the crosslinking points of the polyamide resin and the phenol resin can be made small, and the thermosetting adhesive layer can be made to contain a high modulus at room temperature. Resin is used. Here, the loss modulus and storage modulus can be determined by a Dynamic Mechanical Analyzer (DMA: Dynamic Mechanical Analyzer) >#, j ^ 〇 ^ ^ ^ and the measurement conditions of the storage modulus are in the examples. Explanation. (Materials for the adhesive layer) The materials for the adhesive layer used in the thermosetting adhesive layer are adhesives that have hardening properties due to osmium. The materials can be exemplified by polyamine resins and those containing hardening properties. Resin. (Polyamine resin) Polyamine resin is synthesized by the fusion of aliphatic diamines with 4 or more carbon atoms and non-amplified fatty acid dimers. The specific examples of the tribe- 脍 ximu sister yt are tired of the number 4 yue-yue girl can be listed as: succindiamine, pentanediamine, =, di-di Γ, decanediamine, dodecadiamine, etc. Among them, It is better to use carbon as ..., fatty diamine is more preferred, aliphatic monoamine having 4 to 12 carbon atoms is more preferable, and aliphatic monoamine having 6 to 12 carbon atoms is used. Carbon original early seal 4 ... Yayue female is the best. (Such as aliphatic diamine, 埶 砀 servant + knife) the day of the moon ... dagger 'The adhesive layer also exhibits gf properties at high temperatures), and due to the high viscosity (methane strength), the adhesive strength with insulation can be obtained .... Contains poly_lipid ... In the case of Φ, it is possible to use the ㈣ layer to reduce the heat shrinkage even if it is lower than 、, 、, 仔, 仔, 阿, 仔, ', 315, 1242593 and the fatty acid dimer with 36 carbon atoms due to irreversibility and It is suitable for use at the point of == sex. Permanent object h can be obtained by condensing a fatty acid with a carbon number of 18 and an unsaturated fatty acid with a number of 18 as an example. Such as: oleic acid, linoleic acid, linolenic acid, etc. Among them, linoleic acid is particularly preferable because it is easy to adjust the above (loss modulus x degree) to more than 0.25 MPa / # m. It is more preferably composed of oleic acid or linolenic acid from M "to Bailey's linoleic acid plate 001 to temporary denier" to 20 Bailey%. In addition, in the synthesis of polyamide resin, in addition to carbon In addition to a dibasic acid diamine having an atomic number of 4 or more and an unsaturated fatty acid dimer, a small amount of trifunctional or higher functional acid components and trifunctional or higher amine components may be used as auxiliary components to synthesize a 2-branched polyamine resin. The trifunctional or higher functional acid component (or trifunctional or higher amine component) of the secondary component is preferably within 20 mol% of the total acid component (or amine component) in the polyamide resin, and 10 mol is preferred. It is better to be less than%. If the secondary component exceeds 20 mol%, the flexibility of the thermosetting adhesive layer after hardening is deteriorated. From the viewpoints of pairing / combining J / combining properties, etc. The mass average molecular weight is preferably 50,000 to 50,000, and more preferably ^ ⑼ to "... ⑽". The mass average molecular weight is determined by gel permeation chromatography (Gpc: to) permeatjng
Chr〇mat〇graphy)測定。又,聚醯胺樹脂之胺價係以〇·5至 60為佳’ 為更佳„胺價不滿〇 5時’則電絕緣性容 易變差’胺價超過60時,則殘留未反應之胺基使電路容易 被污染而易於引發點著不良之問題。而且’使用不同胺價 之2種類聚醯胺樹脂時,便可容易控制硬化後之熱硬化性黏 η 315196 1242593 著劑層之可;#卜4 i ϋ , 之聚萨胺枓二 在此’聚醯胺樹脂之胺價係將h 之“部脂溶於甲苯/正丁醇混 ‘ 之。醇溶液作為指示劑,以。·_酸作;吏用二= 之,以當量之氫氧化钾之叫表示。^作為滴疋液進行 又,來醯胺樹脂之醯基 量之總合除2者^炎。 ]之刀子里(酸與二胺之分子 下降而確仵1平^杜5〇至4〇0者,則黏著劑之常溫凝聚力 隹保其千坦性,其結果,在 溫熱硬化性黏著劑; ¥"用黏者片▼之常 佳。 」層因無捲曲而提高其作業性,因而為 (硬化性樹脂) ”人’敛述有關構成黏著 硬化性樹脂係只要使用具=用/才科之硬化性樹脂。 化性樹脂者即可,1中 ,、‘、石化性、光硬化性等硬 執性而〜土,曰因可得到優異之電絕緣性以及高耐 雙二::二脂可例舉如 又的Α “““曰寻酚醛清漆樹脂 苯酚樹脂等。尤並,ψ ^、 甲樹脂、聚對 ,、甲階酚醛樹脂係可得高耐埶性,且右 可將下述環氧樹脂硬化之 …性具有 埶硬化性& | β 而為侄。酚樹脂係為得到 …更化“靖之耐熱性之重要成 2,000至5〇,_,以2,_至】5,_為佳,又以刀子為 者為更佳’因可得到耐熱性而為佳。又又 係MC以上者,更因可提高耐熱性而佳^之軟化點 亚且,環氧樹脂係只要呈有 可使用。具體之例舉如:雙、:二:咖之樹脂便 又鉍Αί、雙酚F型、雙酚s等之 315196 13 1242593 =型w樹脂、萘型環氧樹脂、㈣清漆型 =嶋型環她、四環氧丙§峨型環氧樹脂、 “ u丙酝丙*元型裱氧樹脂、環氧丙胺型環氧樹脂、三_ 二甲=氧樹脂等二官能或多官能環氧樹脂,尤其以: 久〆、ί ,,‘、性之多官能環氧樹脂為適用。 而且,酿亞胺樹脂係以雙馬來酸酐縮亞胺系 適用。 ρ 黏著劑層用材料中,亦可併用除了上述酚樹脂、 衣氧树月曰鳇亞胺樹脂以外之硬化性樹脂成份。更且 化促進劑亦可含有聚胺、酸肝,化合物。並且,在敎 硬化性黏著劑層中’聚醒胺樹脂之含量係在包括硬化性樹 脂之樹脂成份中為20至80質量%者,以耐熱性及耐藥性之 硯點上來說為佳,如有30至7〇質量%者為更佳。 並且’在熱硬化性黏著劑層中,除了聚酿胺樹脂盥硬 化性樹脂,亦可含有熱可塑性樹腊。藉由使含有熱可塑性 樹脂’便可在硬化後之熱硬化性黏著劑層中附與可挣性 熱可塑性樹脂係可列舉如與上述聚酿胺樹脂之組成不同之 聚酿胺樹脂(例如:碳原子數3以下之脂肪族二胺為 份之聚醯胺樹脂);含羧基之丙烯腈_丁二烯共聚物、含犷 基之丙稀腈-丁二稀共聚物、含環氧丙基之丙稀腈·丁二^ 共聚物等之丙稀腈-丁二稀共聚物;熱可塑性聚酿樹 烯酸橡膠、苯乙烯-丁二烯共聚物等,只要具有胺基、羧基 烴基等官能基之熱可塑性樹脂則可變得更易於控二 因而適用。 几 315]% 14 1242593 而且,在熱硬化性黏著劑層中亦可含有平均粒徑丨以以 以下之填充物。填充物亦可使用任一種之氧化矽、氧化鈦、 氧化@'氮化m、石英粉、氧化鎂等無機填充物, 以及由聚矽氧烷樹脂、聚醯亞胺樹脂、酚樹脂等樹脂粉末 所組成之有機填充物,而以該等之絕緣性填充物為適用。 填充物之添加量係對樹脂固形成份100重量份計,可添加至 3 〇質量份以内之範圍。 (半導體裝置用黏著片帶之製造) +在製造本發明之半導體裝置用黏著片帶時,將上述點 ㈣層用材料溶解、混合於有機溶劑而為液狀之樹脂组成 物,將該組成物作為塗料,在絕緣性薄膜之至少—面上塗 佈、層積、乾燥而形成熱硬化性黏著劑層。熱硬化性^ 劑層在乾燥後之厚度以3”至15()/^佳,又 2〇" m為更佳。熱硬化性黏著劑層則 狀態者為佳。 王+硬化 在製造本發明之半導體裝置用黏著片帶之際,可將液 2樹脂組成物直接塗佈在絕緣性薄膜上,亦可 剝離性膜等臨時載體所得之黏著片貼合於絕緣性膜上。 调配液狀之樹脂組成物之適用有機溶劑可例舉如.N_ :基…烧,、n,n-二甲基乙酿胺、N算二甲基甲酸 月女、丁酮、曱基異丁酮、曱笨、二曱 ::::醇、異丙醇、曱基溶纖劑等。、該等 亦可併用2種以上者。 而且,在熱硬化性黏著劑層之表面上,以設置保護膜 315196 15 1242593 者為佳。在使用本發明之 Η兮仅4 π二处 牛¥肢衣置用點著片帶時,則剝 開该保蠖胺而使用。俘謹 醋及聚稀烴等膜,二;!係可使用㈣苯二甲酸乙二醇 離性膜為適用。帶有經實施剝離處理之剥 貫施例: 以下,依照實施例說明本發明。 复i例1 在經剝離處理之厚度3 斛播二 又Μ # +對笨二甲酸乙二醇酯 所構成之保護膜單面上,涂 塗料使乾择後之…: 之黏著劑層形成用 . 居度為12//m,在130°C下乾燥5分鐘而製 成黏著膜。 衣 接著,在黏著膜上將厚度75 # m之由聚酿亞胺膜所成 絕緣性膜貼合,在10(rc,lkg/cm2之條件下加熱延廢, 而製成本發明之半導體裝置用黏著片帶。 (點著劑層形成用塗料) 混合25質量%之由90質量%之亞油酸以及1 〇質量%之 ^酸所得之不飽和脂肪酸二聚物與己二胺作為稠合成份之 聚醯胺樹脂(胺值為20、質量平均分子量為2,8〇〇)之異丙醇 /甲笨之混合溶液:64質量份 混合50質量%之萘型環氧樹脂(大曰本油墨化學工業 公司製造,商品名:EPOKURON HP7200)之丁 S同溶液:15 質量份 混合5 0質量。/。之酴酸清漆笨齡樹脂(昭和高分子公司 製造,商品名·· CKM24〇〇)之丁酮溶液:6.5質量份 315196 16 1242593 混合50質量%之酉分盤清漆笨酉分樹脂( 、 製造’商品名ELS373Z)之丁⑷容液:13質旦刀子公0 份混合1質量%之2_乙基冰甲基㈣之^容液:3質量 除了以下列組成物作為點著劑層形成立 餘皆同於實施⑷製成本發明之半導體裳 多占 著劑層之厚度為20"m。 用*占者“。黏 (I占著劑層形成用塗料) 混合25質量%之由85質量%之亞油 0夂从及1 5質量%之 油酸製得之不飽和脂肪酸二聚物盥 ' ,、已一如為稠合成份之聚 卿直為50,質量平均分子量為2,3〇〇)之異丙醇/ 曱苯之混合溶液:47質量份 混合50質量%之由80質量%之亞油酸以及2〇質量%之 油酸所得之不飽和脂肪酸二聚物與己二胺為稠合成份之聚 醯胺樹脂(胺值為15,質量平均分子量為8,〇〇〇)之丁 g同溶 液:20質量份混合50質量。/。之酚醛清漆笨酚樹脂(昭和高分 子公司製造,商品名:CKM908A)之丁 _溶液:33質量份 實施例3 除了以下列組成物作為黏著劑層形成用塗料以外,其 餘皆同於實施例1製作本發明之半導體裝置用黏著片帶。黏 著劑層之厚度為1 2 // m。 (黏著劑形成用塗料) 混合25質量%之由80質量%之亞油酸以及2〇質量如夂 315196 17 1242593 油酸所得之不飽和脂肪酸二聚物與己二胺為稠合成份之聚 醯胺樹脂(胺值為20,質量平均分子量為2,300)之異丙醇/ 曱苯之混合溶液:64質量份 混合5 0質量%之萘型環氧樹脂(大日本油墨化學工業 公司製造,商品名:EPIKURON HP7200)之丁酮溶液:15 質量份 混合5 0質量%之酚醛清漆苯酚樹脂(昭和高分子公司 製造,商品名:CKM2400)之丁酮溶液:6.5質量份 混合5 0質量%之酚醛清漆苯酚樹脂(昭和高分子公司 製造,商品名:ELS373Z)之丁酮溶液:13質量份 混合1質量%之2-乙基-4-曱基咪唑之丁酮溶液:3質量 份 實施例4 除了以下列組成物作為黏著劑層形成用塗料以外,其 餘皆同於實施例1製作本發明之半導體裝置用黏著片帶。黏 著劑層之厚度為8 // m。 (黏著劑層形成用塗料) 混合25質量%之聚醯胺樹脂(日本漢高公司製造,商品 名:MACROMELT6238,胺值為7,質量平均分子量為8,000) 之異丙醇/曱苯混合溶液:40質量份 混合3 0質量%之聚醯亞胺樹脂(質量平均分子量為 40,000)之四氫呋喃溶液:22質量份 混合5 0質量%之萘型環氧樹脂(大日本油墨化學工業 公司製造,商品名:EPIKURON HP7200)之丁酮溶液:20 315196 1242593 質量份 混合5 0質量%之酚醛清漆苯酚樹脂(昭和高分子公司 製造,商品名:CKM2400)之丁酮溶液:6.5質量份 混合1質量%之2-乙基-4-曱基咪唑之丁酮溶液:5質量 份 實施例5 除了以下列組成物作為黏著劑層形成用塗料以外,其 餘皆同於實施例1製作本發明之半導體裝置用黏著片帶。黏 著劑層之厚度為3 // m。 (黏著劑層形成用塗料) 混合2 5質量%之聚醯胺樹脂(曰本漢高公司製造,商品 名:MACROMELT6900,酸值為2,胺值為0·5,質量平均 分子量為55,000)之異丙醇/曱苯混合溶液:63質量份 混合5 0質量%之環氧樹脂(油化薛爾公司製造,商品 名:EPICΟΤ 1001)之丁酮溶液:20質量份 混合5 0質量%之酚醛清漆苯酚樹脂(昭和高分子公司 製造,商品名:CKM2400)之丁酮溶液:13質量份 混合1質量%之2-乙基-4-曱基咪唑之丁酮溶液:5質量 份 比較例1 除了以下列組成物作為黏著劑層形成用塗料以外,其 餘同於實施例1製作比較用之半導體裝置用黏著片帶。黏著 劑層之厚度為1 2 μ m。 (黏著劑層形成用塗料) 315196 1242593 混合25質量%之聚醯胺樹脂(胺值為7,質量平均分子 量為10,00 0)之異丙醇/曱苯溶液:40質量份 混合30質量%之聚醯亞胺樹脂(質量平均分子量為 40,000)之四氫呋喃溶液:22質量份 混合50質量%之萘型環氧樹脂(大曰本油墨化學工業 公司製造,商品名·· EPIKURON HP7200)之丁酮溶液:20 質量份 混合5 0質量%之酚醛清漆苯酚樹脂(昭和高分子公司 製造,商品名·· CKM2400)之丁酮溶液:6.5質量份 混合1質量%之2-乙基-4-曱基咪唑之丁酮溶液:5質量 份 t匕較^[列2 除了以下列組成物作為黏著劑層形成用塗料以外,其 餘皆同於實施例1製作比較用之半導體裝置用黏著片帶。黏 著劑層之厚度為1 2 // m。 (黏著劑層形成用塗料) 混合25質量%之聚醯胺樹脂(曰本漢高公司製造,商品 名:MACROMELT6900,酸值為2,胺值為0.5,質量平均 分子量為55,000)之異丙醇/曱苯混合溶液:63質量份 混合5 0質量%之環氧樹脂(油化薛爾公司製造,商品 名:EPICOT 1001)之丁酮溶液:20質量份 混合5 0質量%之酚醛清漆笨酚樹脂(昭和高分子公司 製造,商品名:CKM2400)之丁酮溶液:13質量份 混合]質量%之2-乙基-4-曱基咪唑之丁酮溶液:5質量 20 3J5196 1242593 份 比較例3 ^ ^貝^例〗同樣製作比較用之半導體裝置用黏著片 帶。然而,黏著劑層之厚度為100// m。 (熱硬化性黏著劑層之指旦 旦 相失板夏(ioss modiilus)以及儲存模 量(storage modulus)) 、 將貧施例1至5以及比較例1至3之半導體裝置用黏著月 V之保護膜撕開後面將絕緣性膜以及熱硬化性黏著气 層所組f之層積體在啊中加熱,一面從絕緣性膜將熱: 化f生黏者劑層剝開。接著,制 安者在衣作下述之试驗物之際,將 熱硬化性黏著劑層與電解銅落黏接使加熱之條件下,將熱 硬化性黏著劑層單體加熱以使硬化。對於熱硬化後之熱硬 化性黏著劑層’使用以下之動態機械分析儀(DMA :Chromatography). In addition, the amine valence of the polyamine resin is preferably from 0.5 to 60 ', which is more preferable. "When the amine value is less than 0.05", the electrical insulation is likely to deteriorate. When the amine value exceeds 60, unreacted amine remains. Base makes the circuit easy to be polluted and easy to cause the problem of ignition failure. Also, when using two kinds of polyamine resins with different amine values, it is easy to control the thermosetting viscosity after curing 315 196 1242593 adhesive layer; # 卜 4 i ϋ, the polysaline 枓 2 'The amine valence of the polyamine resin is the "partial fat dissolved in toluene / n-butanol mixed". An alcohol solution is used as an indicator. · _Acid is used; officials use two =, expressed by the equivalent of potassium hydroxide. ^ Performed as a diarrhea solution. In addition, the sum of the amount of fluorenyl resin in amine resin is divided by 2 ^ inflammation. ] In the knife (the molecule of acid and diamine is reduced and it is confirmed that 1 level ^ Du 50 to 400, the cohesive strength of the adhesive at room temperature is guaranteed to maintain its tenacity, as a result, the thermosetting adhesive ¥ " The sticky sheet ▼ is very good. "The layer improves its workability because it is not curled, so it is (hardening resin)." Human "summarizes the composition of the adhesive hardening resin as long as it is used. The hardening resin of the branch. Any chemical resin can be used, such as 1 ', sclerosis, petrochemical, and light hardening, etc. ~ soil, because it can obtain excellent electrical insulation and high resistance. Examples of lipids include "A", "Novolac resin, phenol resin, etc." In particular, ψ ^, formazan resin, polyparaben, and resol resin can obtain high resistance, and can be lowered to the right The hardening properties of the epoxy resin are 埶 hardening properties & | β and are nephews. Phenolic resins are important to obtain "more important" heat resistance of 2,000 to 50, _, to 2, _ to] 5, _ Is better, and a knife is better. 'It is better because it can obtain heat resistance. For those who are more than MC, it can be improved. The softening point of the heat is good, and the epoxy resin can be used as long as it is present. Specific examples are: bis, bis, bisphenol F, bisphenol F, 315196, etc. 13 1242593 = type w resin, naphthalene type epoxy resin, ㈣ varnish type = 嶋 type ring her, tetraglycid § E type epoxy resin, "u propylene propylene * yuan type epoxy resin, epoxy amine type ring Difunctional or polyfunctional epoxy resins such as oxyresin and tri-dimethyl = oxyresin are especially suitable for use with long-term, low-molecular, multifunctional epoxy resins. Moreover, imine resins are bifunctional It is suitable for maleimide imide. Ρ For the adhesive layer material, hardening resin components other than the above-mentioned phenol resins and oxymethylene resins can also be used in combination. The polymerization accelerator may also contain a polymer. Amine, acid liver, compounds, and the content of 'polyamine resin in the hardening adhesive layer is 20 to 80% by mass of the resin component including the hardening resin, based on heat resistance and chemical resistance. It is better from the point of view, and it is more preferable if it is 30 to 70% by mass. The agent layer may contain a thermoplastic resin wax in addition to a polyurethane resin and a curable resin. By including the thermoplastic resin, the hardenable thermosetting adhesive layer can be attached to a profitable thermoplastic resin. Examples of the resin system include polyamine resins having a composition different from that of the above polyamine resins (for example, polyamidoresin having an aliphatic diamine of 3 or less carbon atoms); acrylonitrile-butadiene containing a carboxyl group Copolymers, acrylonitrile-butadiene copolymers containing fluorenyl groups, acrylonitrile-butadiene copolymers, such as acrylonitrile-butadiene copolymers containing epoxypropyl groups; thermoplastic polystyrene Acid rubber, styrene-butadiene copolymer, and the like are applicable as long as they are thermoplastic resins having functional groups such as amine groups and carboxyl hydrocarbon groups. 315]% 14 1242593 Furthermore, the thermosetting adhesive layer may contain fillers having an average particle size of ≦ 1 or less. The filler can also use any of inorganic fillers such as silicon oxide, titanium oxide, oxide @ 'nitride m, quartz powder, magnesium oxide, and resin powders such as polysiloxane resin, polyimide resin, and phenol resin. The organic filler is composed of these insulating fillers. The filler is added in an amount of less than 30 parts by mass based on 100 parts by weight of the solid content of the resin. (Manufacturing of Adhesive Tape for Semiconductor Device) + When manufacturing the adhesive tape for semiconductor device of the present invention, the material for the above-mentioned piercing layer is dissolved and mixed with an organic solvent to form a liquid resin composition. As a coating material, a thermosetting adhesive layer is formed by coating, laminating, and drying on at least one side of an insulating film. The thickness of the thermosetting layer after drying is preferably 3 "to 15 () / ^, and more preferably 20" m. The state of the thermosetting layer is better. King + hardening in the manufacturing When the adhesive sheet for a semiconductor device of the invention is used, the liquid 2 resin composition can be directly coated on an insulating film, or an adhesive sheet obtained from a temporary carrier such as a peelable film can be attached to the insulating film. Suitable organic solvents for the resin composition can be exemplified by: N_: base ..., n, n-dimethyl ethyl amine, N is dimethyl formate, methyl ethyl ketone, methyl isobutyl ketone, fluorene Ben, Di 、 :::: alcohol, isopropanol, fluorene-based cellosolve, etc., or two or more of them can be used in combination. Furthermore, a protective film 315196 is provided on the surface of the thermosetting adhesive layer. 15 1242593 is better. When using the present invention only 4 π two cows ¥ limb clothing placement point belt, then peel off the melamine and use it. Films such as vinegar and paraffin, II ;! It is applicable to use ethylene glycol phthalate release film. It is provided with a peeling example after the peeling treatment is carried out: In the following, it is explained in accordance with the examples Invention. Example 1 Compound 1 on the single side of a protective film made of peeling treatment with a thickness of 3 DH # M + + p-dibenzoate, coated with a coating to make dry selection ...: an adhesive layer For forming. The dwelling degree is 12 // m, and it is dried at 130 ° C for 5 minutes to make an adhesive film. Next, an insulating film made of polyimide film with a thickness of 75 # m is pasted on the adhesive film. Then, the waste is heated and extended under the conditions of 10 (rc, 1 kg / cm2) to prepare an adhesive sheet for a semiconductor device of the present invention. (Coating for forming a spotting agent layer) 25% by mass of 90% by mass of linoleum is mixed Unsaturated fatty acid dimer obtained from an acid and 10% by mass of acetic acid, and isopropyl alcohol, a polyamine resin having an amine value of 20 and a mass average molecular weight of 2,800 as a thick synthetic component. / Mebenzyl mixed solution: 64 parts by mass of 50 parts by mass of 50% by mass of a naphthalene-type epoxy resin (manufactured by Daiyoku Ink Chemical Co., Ltd., trade name: EPOKURON HP7200) of D: S solution: 15 parts by mass and 50 parts by mass. /. Ding acid varnish stupid resin (manufactured by Showa Polymer Co., Ltd., CKM24〇〇) Solution: 6.5 parts by mass 315196 16 1242593 mixed with 50% by mass of bismuth plate varnish stupid resin ((manufactured by the trade name ELS373Z) Ding volume solution: 13 quality denier knife male 0 parts mixed 1% by mass 2_B Base solution of methyl ice methyl sulfide: 3 masses except that the following composition is used as the priming agent layer to form the remaining material, which is the same as the semiconductor coating of the present invention. The thickness of the occupant agent layer is 20 " m. Use * Zhan ". Viscosity (I accounts for the coating for the formation of the agent layer) 25% by mass of an unsaturated fatty acid dimer prepared from 85% by mass of linoleum and 15% by mass of oleic acid, Polyisopropyl alcohol / xanthezine mixed solution, which is 50% by weight and has a mass average molecular weight of 2,300, as a thick synthetic component: 47 parts by mass, 50% by mass, and 80% by mass of Asia Polybutylene amine resin (amine value of 15 and mass average molecular weight of 8,000) of unsaturated fatty acid dimer obtained from oleic acid and 20% by mass of oleic acid and hexamethylenediamine as a thick synthetic component, butylene g Same solution: 20 parts by mass and 50 parts by mass. /. Novolac resin (manufactured by Showa Polymer Co., Ltd., trade name: CKM908A) butyl solution: 33 parts by mass Example 3 Except that the following composition was used as a coating for forming an adhesive layer, the rest were the same as in Example 1 An adhesive tape for a semiconductor device of the present invention is produced. The thickness of the adhesive layer is 1 2 // m. (Coating for forming adhesive) 25% by mass of 80% by mass of linoleic acid and 20% by mass of 315196 17 1242593 oleic acid, an unsaturated fatty acid dimer and hexamethylenediamine as a thick synthetic polymer Amine resin (amine value of 20, mass average molecular weight of 2,300) in isopropyl alcohol / xylene mixed solution: 64 parts by mass and 50% by mass of a naphthalene-type epoxy resin (manufactured by Dainippon Ink Chemical Industry Co., Ltd., trade name) : EPIKURON HP7200) methyl ethyl ketone solution: 15 parts by mass mixed with 50% by mass of novolac phenol resin (manufactured by Showa Polymer Co., Ltd., trade name: CKM2400): methyl ethyl ketone solution: 6.5 parts by mass mixed with 50% by mass of novolak Butanone solution of phenol resin (manufactured by Showa Polymer Co., Ltd., trade name: ELS373Z): 13 parts by mass of a 2-ethyl-4-fluorenimidazole butanone solution mixed with 1 part by mass: 3 parts by mass Example 4 Except the following Except that the column composition was used as a coating material for forming an adhesive layer, the rest were the same as in Example 1 to prepare an adhesive sheet for a semiconductor device of the present invention. The thickness of the adhesive layer is 8 // m. (Paint for forming an adhesive layer) 25% by mass of a polyisocyanate resin (manufactured by Henkel Corporation, Japan, trade name: MACROMELT6238, amine value 7, mass average molecular weight 8,000) of an isopropyl alcohol / benzylbenzene mixed solution: 40 parts by mass of 30% by mass of a solution of polyimide resin (mass average molecular weight: 40,000) in a tetrahydrofuran solution: 22 parts by mass of 50% by mass of a naphthalene-type epoxy resin (manufactured by Dainippon Ink Chemical Industries, Ltd., trade name) : EPIKURON HP7200) butanone solution: 20 315196 1242593 parts by mass mixed with 50% by mass novolac phenol resin (manufactured by Showa High Polymers Co., Ltd., trade name: CKM2400) butanone solution: 6.5 parts by mass mixed with 2% by mass 2 -Ethyl-4-fluorenimidazole butanone solution: 5 parts by mass of Example 5 Except that the following composition was used as a coating for forming an adhesive layer, the rest were the same as in Example 1 to produce an adhesive sheet for a semiconductor device of the present invention. band. The thickness of the adhesive layer is 3 // m. (Coating for forming an adhesive layer) 25% by mass of a polyamine resin (manufactured by Ben Henkel, trade name: MACROMELT6900, acid value of 2, amine value of 0.5, and mass average molecular weight of 55,000) Isopropyl alcohol / xanthene mixed solution: 63 parts by mass mixed with 50% by mass of epoxy resin (manufactured by Grease Chemical Co., Ltd., trade name: EPIC〇Τ 1001) butanone solution: 20 parts by mass mixed with 50% by mass of phenolic Varnish phenol resin (manufactured by Showa Polymer Co., Ltd., trade name: CKM2400) methyl ethyl ketone solution: 13 parts by mass mixed with 1 mass% of 2-ethyl-4-fluorenimidazole butanone solution: 5 parts by mass Comparative Example 1 Except Except that the following composition was used as a coating material for forming an adhesive layer, the remainder was made in the same manner as in Example 1 to prepare an adhesive sheet for a semiconductor device for comparison. The thickness of the adhesive layer is 12 μm. (Coating for layer formation) 315196 1242593 25% by mass of polyisocyanate resin (amine value: 7, mass average molecular weight: 10,000) in isopropyl alcohol / benzylbenzene solution: 40 parts by mass and 30% by mass Tetrahydrofuran solution of polyimide resin (mass average molecular weight: 40,000): 22 parts by mass of 50 parts by mass of 50% by mass of naphthalene-type epoxy resin (manufactured by Daiyoku Ink Chemical Co., Ltd., EPIKURON HP7200) butanone Solution: 20 parts by mass of 50% by mass of a novolak phenol resin (manufactured by Showa Polymer Co., Ltd., CKM2400) butanone solution: 6.5 parts by mass of 1% by mass of 2-ethyl-4-fluorenyl A solution of imidazole in methyl ethyl ketone: 5 parts by mass of the compound ^ [Column 2 except that the following composition was used as a coating material for forming an adhesive layer, the rest were made in the same manner as in Example 1 to prepare an adhesive sheet for a semiconductor device for comparison. The thickness of the adhesive layer is 1 2 // m. (Paint for forming an adhesive layer) 25% by mass of a polyamide resin (manufactured by Ben Henkel, trade name: MACROMELT6900, acid value of 2, amine value of 0.5, and mass average molecular weight of 55,000) of isopropyl alcohol / Benzene mixed solution: 63 parts by mass mixed with 50% by mass of epoxy resin (manufactured by Grease Chemical Co., Ltd., trade name: EPICOT 1001) butanone solution: 20 parts by mass mixed with 50% by mass of novolac phenol Methyl ketone solution of resin (manufactured by Showa Polymer Co., Ltd., trade name: CKM2400): 13 parts by mass of mixed methyl ethyl ketone solution of 2-ethyl-4-fluorenimidazole: 5 mass 20 3J5196 1242593 parts Comparative Example 3 ^ ^ Shell ^ Example〗 Similarly, an adhesive sheet for a semiconductor device for comparison is produced. However, the thickness of the adhesive layer is 100 // m. (The thermosetting adhesive layer refers to the ioss modiilus and the storage modulus), and the semiconductor devices of Examples 1 to 5 and Comparative Examples 1 to 3 are used for adhesion After the protective film is torn, the laminated body of the insulating film and the thermosetting adhesive gas layer f is heated in the ah, and the heat is peeled from the insulating film while peeling the adhesive layer. Next, when the garment is used as the test object described below, the thermosetting adhesive layer is heated to harden under conditions that the thermosetting adhesive layer is adhered to the electrolytic copper and heated. For the thermosetting adhesive layer after heat curing, the following dynamic mechanical analyzer (DMA:
Dyn_c Meehanieal偏仰)測定其在】⑼。c中之損失模 量以及儲存模量,直牡旲 , 里,、、、口果不灰表1及表2。使用動態黏彈譜 儀(東方科技公司製造, 衣 k KlitC3VIBR〇N DDV-II_EP)作為 DMA,在頻率11 0Hz,升溫叇声vr / · 、 邛/蓝迷度3 ,荷重5.0g下進行 測定。試料之幅寬〇·5cm,長度3 没Cm以及厚度係塗佈後之黏 著劑層厚度。 (半導體裝置用黏著片帶之評估) (1)試驗物之製作: 剝_貫施例1至5以及比較例1 $ ^ ^至3之半導體裝置用黏著 片帶之保護膜,在熱硬化性黏著添 广 有^層面上將約18 // m厚之 %解銅fg於1 3 0。〇,1 kg/cm2之停件了 μ 。 件下貼合而成層積物。然 315196 21 1242593 後’從7 0 °C經8小時之堃、古由 了之寻速度升溫至160。(:將層積體加熱, 再在1 7 0 GC下加敎6小b士冰也π 、 …、]蚪使熱硬化性黏著劑層硬化。接著, 在銅箔上層積光阻膜,谁 進订圖死^曝光、姓刻、鑛錄、鍵金 而形成銲線接合用之焊接立 ^ ^ 干接邓如此,便可得到形成鍍金厚 又為〇·5// m之已形成電路之試驗物。 (2)特性之評估: ※銲線接合性: ⑪晋τ=:例1至5以及比較例1至3之試驗物之晶片焊墼上 口又置IC日日片後’栋闲入a、 恭 孟、泉以銲線接合法連接1C晶片上之鋁 电極部以及片帶上之焊接墼部。 1接::广線拉伸測定器上拉扯接合後之金線以測定 一接3強度,以銲線拉 於表1 5 ^ 又°平估鲜、,泉接合性,其結果示 於表1及表2。貫用上無障 合雖亦因溫度而申強度為8gf左右。輝線接 行。 ,、此處係在20〇c,頻率為60kHz下進Dyn_c Meehanieal tilt) to determine its presence]. The loss modulus and storage modulus in c are as shown in Table 1 and Table 2. A dynamic viscoelasticity spectrometer (manufactured by Dongfang Technology Co., Ltd., KlitC3VIBRON DDV-II_EP) was used as DMA, and the measurement was performed at a frequency of 110 Hz, a heating chirp vr / ·, and a radon / blue fan degree 3 and a load of 5.0 g. The width of the sample was 0.5 cm, the length was 3 cm, and the thickness was the thickness of the adhesive layer after coating. (Evaluation of Adhesive Tapes for Semiconductor Devices) (1) Production of Test Objects: The protective film of the adhesive tapes for semiconductor devices of Examples 1 to 5 and Comparative Examples 1 ^ ^ to 3 was peeled in a thermosetting state. Adhesive Tian Guangyou ^ on the level will be about 18 // m thick% copper fg to 1 3 0. 〇, 1 kg / cm2 stoppage μ. Laminated under the pieces. However, after 315196 21 1242593, the temperature rises from 160 ° C to 70 ° C over 8 hours. (: The laminated body is heated, and then 6 bb small ice, also π,…,] is added at 170 GC to harden the thermosetting adhesive layer. Then, a photoresist film is laminated on the copper foil. Order the picture ^ exposure, last name engraving, mining records, bond gold to form a welding wire for bonding wire bonding ^ ^ By doing so, you can get a formed circuit with a gold plating thickness of 0.5 // m (2) Evaluation of characteristics: ※ Bondability of bonding wire: τ = τ =: The wafer solder joints of the wafers of the test specimens of Examples 1 to 5 and Comparative Examples 1 to 3 are placed on the IC chip after the day. A, Gong Meng, and Quan used the wire bonding method to connect the aluminum electrode part on the 1C wafer and the solder joint on the strip. 1 Connection: The gold wire after the bonding was pulled on the wide wire tensile tester to measure a The strength is 3, and the welding wire is pulled to Table 1 5 ^ and °, the freshness and spring bonding properties are estimated, and the results are shown in Table 1 and Table 2. Although the barrier-free connection is still used, the strength is about 8gf due to temperature. .Hui line connected., Here is at 20 ℃, the frequency is 60kHz
(MPa) 表1 毒占者劑層之 厚度(//m) 損失模量X (1/黏 著劑層之厚 度)(MPa///m)(MPa) Table 1 Thickness of poisonous agent layer (// m) Loss modulus X (1 / thickness of adhesive layer) (MPa /// m)
拉伸強度約以在8至9gf下 為飽和 315196 22 1242593Tensile strength is approximately saturated at 8 to 9 gf 315 196 22 1242593
拉伸強度約以在8至9gf下為飽和 比較例2 〃由表i及表2可知,本發明之半導體裝置、 係拉伸強度為8g以上而無實用上的問題之等級。犬並可 往在考量到因模量低而不適於銲線接合之黏著劑二 經減低該黏著劑層之厚度而確保銲線接合性。s ’、 (產業上之可利用性) 如上述說明,本發明之半導體裝置用黏著 絕緣性腺夕5」、_ f 係- 置用點著片/ 成熱硬化性黏著劑層之半導體」 二 τ目為將上述熱硬化性黏著劑層的厚 ,、在熱硬化後之熱硬化性黏著劑層於赠: 里相乘所得之積大於0 25M 貝 性。如蔣寸主道μ 了仔優兴之銲線接4 . …+ ¥粗裝置用黏著片帶使用在BGa 咼密度化發展之半導體封 寺桌 高銲線連…: 可得到作業性佳,且我 連接之可罪性之信賴度更高之半導體封裝體。 '"二且,在本發明之半導體裝置用點著綱,如將上 述熱硬化性㈣劑層的厚度之倒數與在熱硬化後之熱硬化 315196 23 1242593 性黏著劑層於200 °C下之儲存模量相乘所得之積大於 1 MPa/ // m時,則具有良好之銲線接合性。 315196The tensile strength is approximately saturated at 8 to 9 gf. Comparative Example 2 〃 As can be seen from Tables i and 2, the semiconductor device of the present invention has a tensile strength of 8 g or more without practical problems. Dogs can also consider adhesives that are not suitable for wire bonding due to their low modulus. The thickness of the adhesive layer can be reduced to ensure wire bondability. s', (Industrial availability) As explained above, the adhesive insulating glands of the semiconductor device of the present invention 5 ", _f system-placement of spot-on wafers / semiconductors with thermosetting adhesive layer" 2τ The objective is to multiply the thickness of the above-mentioned thermosetting adhesive layer and the thermosetting adhesive layer after thermosetting by giving a product of greater than 0 25M. For example, Jiang inch is the main source of the μ Welding Welding Wire Connection 4 ...… + ¥ The adhesive tape for the thick device is used in the BGa 咼 density-developed semiconductor sealing temple table high welding wire connection ...: Good workability, and I have a more reliable semiconductor package for the guilty of connection. "" Secondly, in the semiconductor device of the present invention, for example, the reciprocal of the thickness of the above-mentioned thermosetting elixir layer and the thermal curing after thermal curing 315196 23 1242593 adhesive layer at 200 ° C When the product obtained by multiplying the storage modulus is greater than 1 MPa / // m, it has good wire bonding. 315196
Claims (1)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002325431A JP3811120B2 (en) | 2002-11-08 | 2002-11-08 | Adhesive tape for semiconductor devices |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200420702A TW200420702A (en) | 2004-10-16 |
| TWI242593B true TWI242593B (en) | 2005-11-01 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW092131052A TWI242593B (en) | 2002-11-08 | 2003-11-06 | Adhesive tape for semiconductor apparatus |
Country Status (4)
| Country | Link |
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| JP (1) | JP3811120B2 (en) |
| KR (1) | KR100526624B1 (en) |
| CN (1) | CN1296979C (en) |
| TW (1) | TWI242593B (en) |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5470690B2 (en) * | 2007-09-04 | 2014-04-16 | 株式会社デンソー | Bare chip mounting structure |
| JP5083070B2 (en) * | 2007-11-19 | 2012-11-28 | 日立化成工業株式会社 | Sealing film |
| CN101527178B (en) * | 2008-03-04 | 2012-05-23 | 上海均达科技发展有限公司 | Heat shrinkage film interwoven fabric insulating protection belt |
| US20110272185A1 (en) | 2009-01-28 | 2011-11-10 | Akiko Kawaguchi | Pregreg, film with resin, metal foil with resin, metal-clad laminate, and printed wiring board |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06181227A (en) * | 1992-12-14 | 1994-06-28 | Hitachi Chem Co Ltd | Adhesive and semiconductor device |
| US6404049B1 (en) * | 1995-11-28 | 2002-06-11 | Hitachi, Ltd. | Semiconductor device, manufacturing method thereof and mounting board |
| TW340967B (en) * | 1996-02-19 | 1998-09-21 | Toray Industries | An adhesive sheet for a semiconductor to connect with a substrate, and adhesive sticking tape for tab, an adhesive sticking tape for wire bonding connection, a substrate for connecting with a semiconductor and a semiconductor device |
| JP2001081438A (en) * | 1999-09-14 | 2001-03-27 | Sony Chem Corp | Connecting material |
| JP3371894B2 (en) * | 1999-09-17 | 2003-01-27 | ソニーケミカル株式会社 | Connecting material |
-
2002
- 2002-11-08 JP JP2002325431A patent/JP3811120B2/en not_active Expired - Lifetime
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2003
- 2003-11-06 CN CNB2003101240714A patent/CN1296979C/en not_active Expired - Lifetime
- 2003-11-06 TW TW092131052A patent/TWI242593B/en not_active IP Right Cessation
- 2003-11-06 KR KR10-2003-0078257A patent/KR100526624B1/en not_active Expired - Lifetime
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| TW200420702A (en) | 2004-10-16 |
| KR20040041030A (en) | 2004-05-13 |
| CN1296979C (en) | 2007-01-24 |
| KR100526624B1 (en) | 2005-11-08 |
| JP2004158798A (en) | 2004-06-03 |
| JP3811120B2 (en) | 2006-08-16 |
| CN1523651A (en) | 2004-08-25 |
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