CN1523651A - Adhesive tape for semiconductor device - Google Patents
Adhesive tape for semiconductor device Download PDFInfo
- Publication number
- CN1523651A CN1523651A CNA2003101240714A CN200310124071A CN1523651A CN 1523651 A CN1523651 A CN 1523651A CN A2003101240714 A CNA2003101240714 A CN A2003101240714A CN 200310124071 A CN200310124071 A CN 200310124071A CN 1523651 A CN1523651 A CN 1523651A
- Authority
- CN
- China
- Prior art keywords
- bond layer
- semiconductor device
- quality
- thickness
- thermocurable
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 47
- 239000002390 adhesive tape Substances 0.000 title abstract description 4
- 239000004952 Polyamide Substances 0.000 claims description 32
- 229920002647 polyamide Polymers 0.000 claims description 32
- 239000002253 acid Substances 0.000 claims description 19
- 229910052799 carbon Inorganic materials 0.000 claims description 15
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 14
- 239000000539 dimer Substances 0.000 claims description 13
- OYHQOLUKZRVURQ-HZJYTTRNSA-N Linoleic acid Chemical compound CCCCC\C=C/C\C=C/CCCCCCCC(O)=O OYHQOLUKZRVURQ-HZJYTTRNSA-N 0.000 claims description 8
- OYHQOLUKZRVURQ-IXWMQOLASA-N linoleic acid Natural products CCCCC\C=C/C\C=C\CCCCCCCC(O)=O OYHQOLUKZRVURQ-IXWMQOLASA-N 0.000 claims description 8
- 235000020778 linoleic acid Nutrition 0.000 claims description 8
- 238000003860 storage Methods 0.000 claims description 8
- 229920001187 thermosetting polymer Polymers 0.000 abstract 10
- 239000012790 adhesive layer Substances 0.000 abstract 8
- 229920006122 polyamide resin Polymers 0.000 abstract 1
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 69
- 229920005989 resin Polymers 0.000 description 32
- 239000011347 resin Substances 0.000 description 32
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 27
- 239000000243 solution Substances 0.000 description 25
- 239000003822 epoxy resin Substances 0.000 description 24
- 229920000647 polyepoxide Polymers 0.000 description 24
- 239000007767 bonding agent Substances 0.000 description 20
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 17
- 150000001412 amines Chemical class 0.000 description 16
- -1 diolefin compound Chemical class 0.000 description 16
- 238000002156 mixing Methods 0.000 description 16
- 239000011248 coating agent Substances 0.000 description 15
- 238000000576 coating method Methods 0.000 description 15
- 239000000463 material Substances 0.000 description 15
- 239000000758 substrate Substances 0.000 description 15
- 238000001723 curing Methods 0.000 description 14
- 230000000052 comparative effect Effects 0.000 description 12
- 239000000203 mixture Substances 0.000 description 11
- 229920001568 phenolic resin Polymers 0.000 description 11
- 239000005011 phenolic resin Substances 0.000 description 11
- UFWIBTONFRDIAS-UHFFFAOYSA-N Naphthalene Chemical compound C1=CC=CC2=CC=CC=C21 UFWIBTONFRDIAS-UHFFFAOYSA-N 0.000 description 10
- 229920001721 polyimide Polymers 0.000 description 10
- 229920002521 macromolecule Polymers 0.000 description 9
- 239000011259 mixed solution Substances 0.000 description 9
- 229960004592 isopropanol Drugs 0.000 description 8
- 241000218202 Coptis Species 0.000 description 7
- 235000002991 Coptis groenlandica Nutrition 0.000 description 7
- ULKLGIFJWFIQFF-UHFFFAOYSA-N 5K8XI641G3 Chemical compound CCC1=NC=C(C)N1 ULKLGIFJWFIQFF-UHFFFAOYSA-N 0.000 description 6
- 238000005538 encapsulation Methods 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 6
- NAQMVNRVTILPCV-UHFFFAOYSA-N hexane-1,6-diamine Chemical compound NCCCCCCN NAQMVNRVTILPCV-UHFFFAOYSA-N 0.000 description 6
- WRIDQFICGBMAFQ-UHFFFAOYSA-N (E)-8-Octadecenoic acid Natural products CCCCCCCCCC=CCCCCCCC(O)=O WRIDQFICGBMAFQ-UHFFFAOYSA-N 0.000 description 5
- LQJBNNIYVWPHFW-UHFFFAOYSA-N 20:1omega9c fatty acid Natural products CCCCCCCCCCC=CCCCCCCCC(O)=O LQJBNNIYVWPHFW-UHFFFAOYSA-N 0.000 description 5
- QSBYPNXLFMSGKH-UHFFFAOYSA-N 9-Heptadecensaeure Natural products CCCCCCCC=CCCCCCCCC(O)=O QSBYPNXLFMSGKH-UHFFFAOYSA-N 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 5
- ZQPPMHVWECSIRJ-UHFFFAOYSA-N Oleic acid Natural products CCCCCCCCC=CCCCCCCCC(O)=O ZQPPMHVWECSIRJ-UHFFFAOYSA-N 0.000 description 5
- 239000005642 Oleic acid Substances 0.000 description 5
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 5
- 229920001577 copolymer Polymers 0.000 description 5
- QXJSBBXBKPUZAA-UHFFFAOYSA-N isooleic acid Natural products CCCCCCCC=CCCCCCCCCC(O)=O QXJSBBXBKPUZAA-UHFFFAOYSA-N 0.000 description 5
- ZQPPMHVWECSIRJ-KTKRTIGZSA-N oleic acid Chemical compound CCCCCCCC\C=C/CCCCCCCC(O)=O ZQPPMHVWECSIRJ-KTKRTIGZSA-N 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 239000011889 copper foil Substances 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 239000000945 filler Substances 0.000 description 4
- 238000013007 heat curing Methods 0.000 description 4
- 238000012643 polycondensation polymerization Methods 0.000 description 4
- 239000009719 polyimide resin Substances 0.000 description 4
- 238000012360 testing method Methods 0.000 description 4
- 229920005992 thermoplastic resin Polymers 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- NTXGQCSETZTARF-UHFFFAOYSA-N buta-1,3-diene;prop-2-enenitrile Chemical compound C=CC=C.C=CC#N NTXGQCSETZTARF-UHFFFAOYSA-N 0.000 description 3
- 150000003949 imides Chemical class 0.000 description 3
- 238000009434 installation Methods 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 239000003960 organic solvent Substances 0.000 description 3
- 229920005644 polyethylene terephthalate glycol copolymer Polymers 0.000 description 3
- 238000003466 welding Methods 0.000 description 3
- 229930185605 Bisphenol Natural products 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- NTIZESTWPVYFNL-UHFFFAOYSA-N Methyl isobutyl ketone Chemical compound CC(C)CC(C)=O NTIZESTWPVYFNL-UHFFFAOYSA-N 0.000 description 2
- UIHCLUNTQKBZGK-UHFFFAOYSA-N Methyl isobutyl ketone Natural products CCC(C)C(C)=O UIHCLUNTQKBZGK-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 2
- PXKLMJQFEQBVLD-UHFFFAOYSA-N bisphenol F Chemical compound C1=CC(O)=CC=C1CC1=CC=C(O)C=C1 PXKLMJQFEQBVLD-UHFFFAOYSA-N 0.000 description 2
- 238000009833 condensation Methods 0.000 description 2
- 230000005494 condensation Effects 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 150000002617 leukotrienes Chemical class 0.000 description 2
- RTWNYYOXLSILQN-UHFFFAOYSA-N methanediamine Chemical compound NCN RTWNYYOXLSILQN-UHFFFAOYSA-N 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229940043265 methyl isobutyl ketone Drugs 0.000 description 2
- 238000013508 migration Methods 0.000 description 2
- 230000005012 migration Effects 0.000 description 2
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N phenol group Chemical group C1(=CC=CC=C1)O ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 2
- 229920000098 polyolefin Polymers 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 239000011342 resin composition Substances 0.000 description 2
- 229920003987 resole Polymers 0.000 description 2
- 229920006395 saturated elastomer Polymers 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 2
- 239000002966 varnish Substances 0.000 description 2
- RYHBNJHYFVUHQT-UHFFFAOYSA-N 1,4-Dioxane Chemical compound C1COCCO1 RYHBNJHYFVUHQT-UHFFFAOYSA-N 0.000 description 1
- XNWFRZJHXBZDAG-UHFFFAOYSA-N 2-METHOXYETHANOL Chemical compound COCCO XNWFRZJHXBZDAG-UHFFFAOYSA-N 0.000 description 1
- KXGFMDJXCMQABM-UHFFFAOYSA-N 2-methoxy-6-methylphenol Chemical compound [CH]OC1=CC=CC([CH])=C1O KXGFMDJXCMQABM-UHFFFAOYSA-N 0.000 description 1
- VPWNQTHUCYMVMZ-UHFFFAOYSA-N 4,4'-sulfonyldiphenol Chemical compound C1=CC(O)=CC=C1S(=O)(=O)C1=CC=C(O)C=C1 VPWNQTHUCYMVMZ-UHFFFAOYSA-N 0.000 description 1
- NLHHRLWOUZZQLW-UHFFFAOYSA-N Acrylonitrile Chemical group C=CC#N NLHHRLWOUZZQLW-UHFFFAOYSA-N 0.000 description 1
- FRPHFZCDPYBUAU-UHFFFAOYSA-N Bromocresolgreen Chemical compound CC1=C(Br)C(O)=C(Br)C=C1C1(C=2C(=C(Br)C(O)=C(Br)C=2)C)C2=CC=CC=C2S(=O)(=O)O1 FRPHFZCDPYBUAU-UHFFFAOYSA-N 0.000 description 1
- YPXBYWZKMOPINN-UHFFFAOYSA-N C=O.NC(=O)N.C1(=CC=CC=C1)C1=CC=C(C=C1)O Chemical compound C=O.NC(=O)N.C1(=CC=CC=C1)C1=CC=C(C=C1)O YPXBYWZKMOPINN-UHFFFAOYSA-N 0.000 description 1
- JPVYNHNXODAKFH-UHFFFAOYSA-N Cu2+ Chemical compound [Cu+2] JPVYNHNXODAKFH-UHFFFAOYSA-N 0.000 description 1
- 206010013786 Dry skin Diseases 0.000 description 1
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 description 1
- 239000004962 Polyamide-imide Substances 0.000 description 1
- 239000004697 Polyetherimide Substances 0.000 description 1
- 229920000265 Polyparaphenylene Polymers 0.000 description 1
- 239000004734 Polyphenylene sulfide Substances 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 239000002174 Styrene-butadiene Substances 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 150000008065 acid anhydrides Chemical class 0.000 description 1
- 229920000800 acrylic rubber Polymers 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 150000001299 aldehydes Chemical class 0.000 description 1
- 125000003368 amide group Chemical group 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- NPNBCGWBCDUDAJ-UHFFFAOYSA-N benzene-1,2,3-triol;methane Chemical compound C.OC1=CC=CC(O)=C1O NPNBCGWBCDUDAJ-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- MTAZNLWOLGHBHU-UHFFFAOYSA-N butadiene-styrene rubber Chemical compound C=CC=C.C=CC1=CC=CC=C1 MTAZNLWOLGHBHU-UHFFFAOYSA-N 0.000 description 1
- QVYARBLCAHCSFJ-UHFFFAOYSA-N butane-1,1-diamine Chemical compound CCCC(N)N QVYARBLCAHCSFJ-UHFFFAOYSA-N 0.000 description 1
- 150000001721 carbon Chemical class 0.000 description 1
- 235000013339 cereals Nutrition 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 229910001431 copper ion Inorganic materials 0.000 description 1
- 150000001896 cresols Chemical class 0.000 description 1
- 238000004132 cross linking Methods 0.000 description 1
- YQLZOAVZWJBZSY-UHFFFAOYSA-N decane-1,10-diamine Chemical compound NCCCCCCCCCCN YQLZOAVZWJBZSY-UHFFFAOYSA-N 0.000 description 1
- 238000000280 densification Methods 0.000 description 1
- 150000004985 diamines Chemical class 0.000 description 1
- FPAFDBFIGPHWGO-UHFFFAOYSA-N dioxosilane;oxomagnesium;hydrate Chemical compound O.[Mg]=O.[Mg]=O.[Mg]=O.O=[Si]=O.O=[Si]=O.O=[Si]=O.O=[Si]=O FPAFDBFIGPHWGO-UHFFFAOYSA-N 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 235000013312 flour Nutrition 0.000 description 1
- 125000000524 functional group Chemical group 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 125000003055 glycidyl group Chemical group C(C1CO1)* 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- 150000004693 imidazolium salts Chemical class 0.000 description 1
- 239000011256 inorganic filler Substances 0.000 description 1
- 229910003475 inorganic filler Inorganic materials 0.000 description 1
- WFKAJVHLWXSISD-UHFFFAOYSA-N isobutyramide Chemical compound CC(C)C(N)=O WFKAJVHLWXSISD-UHFFFAOYSA-N 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000000178 monomer Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000012766 organic filler Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- AFEQENGXSMURHA-UHFFFAOYSA-N oxiran-2-ylmethanamine Chemical compound NCC1CO1 AFEQENGXSMURHA-UHFFFAOYSA-N 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000012536 packaging technology Methods 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229920003192 poly(bis maleimide) Polymers 0.000 description 1
- 229920001643 poly(ether ketone) Polymers 0.000 description 1
- 229920000058 polyacrylate Polymers 0.000 description 1
- 229920002312 polyamide-imide Polymers 0.000 description 1
- 229920000768 polyamine Polymers 0.000 description 1
- 238000006068 polycondensation reaction Methods 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229920001601 polyetherimide Polymers 0.000 description 1
- 229920000069 polyphenylene sulfide Polymers 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 125000002924 primary amino group Chemical group [H]N([H])* 0.000 description 1
- 239000001294 propane Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 239000008247 solid mixture Substances 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000011115 styrene butadiene Substances 0.000 description 1
- 229920003048 styrene butadiene rubber Polymers 0.000 description 1
- 230000002194 synthesizing effect Effects 0.000 description 1
- 229920001169 thermoplastic Polymers 0.000 description 1
- 239000004416 thermosoftening plastic Substances 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/60—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Adhesive Tapes (AREA)
- Adhesives Or Adhesive Processes (AREA)
- Die Bonding (AREA)
Abstract
An adhesive tape for a semiconductor device is provided to improve a bonding characteristic by forming a thermosetting adhesive layer on at least one side of an insulating film. An adhesive tape for semiconductor device includes an insulating film and a thermosetting adhesive layer. The thermosetting adhesive layer is disposed on at least one side of the insulating film. A product of an inverse of a thickness of the thermosetting adhesive layer and a loss elastic modulus of the thermosetting adhesive layer after thermosetting at 200 degrees is larger than 0.25 MPa/micrometers. Further, a product of an inverse of the thickness of the thermosetting adhesive layer and a retaining elastic modulus of the thermosetting adhesive layer after thermosetting at 200 degrees is larger than 1 MPa/micrometers. The thermosetting adhesive layer consists of a polyamide resin.
Description
Technical field
The present invention relates to the splicing tape that semiconductor device uses, the splicing tape that relates to the semiconductor device use that is particularly suitable for surface mount type semiconductor device particularly, this splicing tape can be used for the packaging technology of semiconductor device and is used for the TAB of the high-density installation that is suitable for device of TAB (Tape Automated Bonding) mode with band; Be particularly suitable for built-in TCP (Tape Carrier Package) such as BGA (Ball Grid Array), CSP (Chip Scale Package) with being with; The band that the anchor leg framework uses; And by wire bond connection lead frame and film carrier tape manufactured using etc.
Background technology
In recent years, because the requirement to the semiconductor device of small-sized, slim, in light weight, high packing density is improving day by day, multitube pin (ピ Application) IC (semiconductor integrated circuit) encapsulation that therefore constitutes the electronic product core becomes the IC encapsulation of the high-density installation that is called face (エ リ ア) connecting-type BGA, CSP gradually from the peripheral connecting-type in past.
Inside in BGA and CSP encapsulation is provided with the solder joint of surface grid shape as external connection terminals.IC is installed on the circuit substrate (below, be called circuit board again) for wiring again etc., and constitutes IC encapsulation (BGA, CSP), is loaded in then as on the hard printed base plate of motherboard etc.
With regard to the kind of circuit board again, BGA can roughly divide into flexibility (プ ラ ス チ Star Network) BGA (P-BGA) and band BGA (T-BGA).Among T-BGA, have and adopt ILB (lead combination) the mode type that uses TAB in the past and adopt wire bond mode type, the particularly latter also to be called pitch (Off ァ イ Application ピ Star チ) BGA (FBGA) or band CSP (T-CSP).
Past, with regard to the circuit board again of above-mentioned BGA, hard substrate based on glass epoxy substrate etc., but in recent years, along with popularizing of portable phone etc., requirement in light weight, slimming is improved, and owing to compare with general hard substrate and to need to make more highdensity wiring, therefore belt substrate becomes main flow gradually, the T-BGA (TCP type and the FBGA or the T-CSP that utilize wire bond mode type) that uses this belt substrate that adopts in vogue.Especially, to the fan-in mode, T-CSP has realized miniaturization and narrow and smallization of erection space from the fan-out mode of the T-BGA in past, and also expectation further develops from now on.
As mentioned above, as the substrate of the encapsulation that is used for these TAB modes (TCP), FBGA, use by the bonding agent substrate that stacked metal forming is made on polyimide film.And, require flexible and cementability for bonding agent used herein.
In addition, T-CSP for the wire bond mode, in conjunction with the time, when the electrode wiring (pad portion) on part of the aluminium electrode on the IC chip that is provided with on the belt substrate and the TAB belt substrate partly being connected with gold thread etc., owing at high temperature and by combination tool exert pressure, bonding agent hardness at high temperature just there is requirement.Just, in order to make belt substrate have the hardness that good wire bond requirement bonding agent at high temperature has certain limit.
In addition, owing to be base plate for packaging,, must have the insulating reliability of installation, copper migration etc. of Reflow Soldering etc. and other reliability therefore for belt substrate.
In the past, use and contain heat-curing resin, the serial bonding agent of epoxy resin/NBR (acrylonitrile-butadiene copolymer) (spy opens flat 6-181227 communique (2-5 page or leaf)) and silicone series bonding agent as above-mentioned bonding agent.Wherein, the bonding agent of epoxy resin/NBR series is because low-cost and use easily and wait and by aforesaid substrate, but is not limited to aforesaid substrate, and is widely-used.But, use the belt substrate of epoxy resin/NBR series bonding agent, because NBR is very soft, have that pad portion sinks to, line can not be attached to the welding disk wire bond problem of grading during wire bond.And, under variations in temperature and high temperature and the high humility, have the problem of reflux-resisting welded property, wire bond and insulating properties for a long time.This is because NBR is to be initial feed from diolefin compound, so when exposing to the open air at high temperature for a long time, will ftracture, lost elasticity gradually because of two keys that oxidation contains main chain, the stress buffer effect is disappeared, produce the problems such as connection reliability at solder joint position.And, particularly when the further pitch of circuit board, under hot and humid,, produced problems such as copper migration because the acrylonitrile group of NBR has been introduced copper ion.
The content of invention
The objective of the invention is to solve the problem that existing bonding agent exists, a kind of semiconductor device by using splicing tape of wire bond excellence just is provided.
In the past, the wire bond of semiconductor device by using splicing tape is only considered to be determined by the storage coefficient of elasticity of bonding agent.The thickness of bonding agent also is the general thickness of regulation, but this is not to have considered wire bond setting afterwards.
The inventor's etc. wholwe-hearted discussion result of study shows, if when storing coefficient of elasticity and loss resilience coefficient and all hang down, by making the thickness attenuation of bonding agent, then can improve the wire bond of the splicing tape of semiconductor device use.
The splicing tape that semiconductor device just of the present invention uses is to have insulating film and be arranged on the splicing tape that the semiconductor device of the Thermocurable bond layer on the one side at least of this insulating film uses, it is characterized in that the product of the inverse of the thickness of described Thermocurable bond layer and the loss resilience coefficient of the Thermocurable bond layer after the hot curing under 200 ℃ is greater than 0.25MPa/ μ m.
And for the splicing tape that semiconductor device of the present invention uses, the product of the inverse of the thickness of preferred described Thermocurable bond layer and the storage coefficient of elasticity of the Thermocurable bond layer after the hot curing under 200 ℃ is greater than 1MPa/ μ m.
And preferred described Thermocurable bond layer contains polyamide, and this polyamide is to use the unrighted acid dimer of carbon number 36 to obtain.
And the unrighted acid dimer of described carbon number 36 preferably obtains with linoleic acid.
The best mode that carries out an invention
Describe the present invention below in detail.
[splicing tape that semiconductor device uses]
The splicing tape that semiconductor device according to the invention is used, be the adhesive tape that forms the Thermocurable bond layer on the one side at least of insulating film, the product (loss resilience coefficient * 1/ thickness) of the loss resilience coefficient (Mpa) of Thermocurable bond layer under 200 ℃ after the inverse of the thickness of Thermocurable bond layer (μ m) and the curing should be greater than 0.25MPa/ μ m.
[insulating film]
Insulating film according to the present invention is the film with electrical insulating property.As insulating film, for example can use films such as polyimides, PETG, polyolefin, polyamidoimide, Polyetherimide, polyphenylene sulfide, polyether-ketone.Wherein, the insulating properties of polyimide film and thermal endurance the best are so be preferred.Polyimide film has sale on market, the trade name of preferred Shi Yong East レ デ ュ Port Application company: the trade name of polyimide film (カ プ ト Application), space Bu Yu Productivity society: the epoxylite (trade name of ュ-ピ レ Star Network ス), Bell Yuan chemical industrial company: ア ピ カ Le etc.
The thickness of insulating film is preferably 20 μ m～200 μ m, more preferably 25 μ m～125 μ m.If insulating film thickness less than 20 μ m, because the hardness of the splicing tape that semiconductor device uses is not enough, makes the operability variation, when thickness is thicker than 200 μ m, will be difficult to obtain small-sized semiconductor device.
[Thermocurable bond layer]
According to Thermocurable bond layer of the present invention, be layer with bonding agent formation of the character of solidifying by heat.
And, Thermocurable bond layer of the present invention is characterised in that the product (loss resilience coefficient * 1/ thickness) of the inverse of its thickness (μ m) and the Thermocurable bond layer after the hot curing loss resilience coefficient (MPa) under 200 ℃ is greater than 0.25MPa/ μ m.Just, if the loss resilience coefficient is low, and the thin thickness of bonding agent, wire bond will improve so.And wire bond is by the product decision of the inverse of the loss resilience coefficient of bond layer and bond layer thickness.More preferably, the inverse of the thickness of Thermocurable bond layer and the Thermocurable bond layer after the hot curing at the product of the loss resilience coefficient under 200 ℃ more than 0.6MPa/ μ m.
If the inverse of the thickness of Thermocurable bond layer and the Thermocurable bond layer after the hot curing at the product of the loss resilience coefficient under 200 ℃ below 0.25MPa/ μ m, so when wire bond technology, gold thread can not be attached on the pad portion, perhaps because being connected of gold thread and welding disk is abundant inadequately, after the wire bond technology, can produce the problem that so-called gold thread is peeled off from pad portion.In addition, after the said here hot curing, being meant from about 70 ℃ low temperature increases temperature by preset program, and in the heat treatment of carrying out under 150～170 ℃ about 1～10 hour.This can utilize the low-molecular-weight reactive materials that contains polyamide, polyamide-imide resin, polyimide resin etc. or utilize the reactive curable material that contains phenolic resins, epoxy resin to realize.
Consider bonding agent to circuit during with the imbedibility at the convex-concave surface place of Copper Foil and bonding force, more than the preferred 3 μ m of the thickness of Thermocurable bond layer, loss resilience coefficient at this moment can be about 0.75Mpa.And when the static coefficient of elasticity of Thermocurable bond layer is high, because phenomenons such as different with the static coefficient of elasticity easy generations with the thermal expansion of insulating film of bonding agent are curling, when considering the filming of encapsulation, the thickness of preferred Thermocurable bond layer is got over Bao Yuehao.
And inverse of preferred its thickness (μ m) of Thermocurable bond layer and the product of the storage coefficient of elasticity (MPa) of the Thermocurable bond layer after the hot curing under 200 ℃ (storing coefficient of elasticity * 1/ thickness) are greater than 1MPa/ μ m.When the product of the inverse of the thickness of Thermocurable bond layer and the storage coefficient of elasticity of the Thermocurable bond layer after the hot curing under 200 ℃ is 1MPa/ μ m when following, during wire bond technology gold thread and pad be connected very difficult.
Especially, the inverse of the thickness of preferred Thermocurable bond layer and the product of the storage coefficient of elasticity of the Thermocurable bond layer after the hot curing under 200 ℃ be greater than 3MPa/ μ m, and more preferably greater than 10MPa/ μ m.Realize above-mentioned purpose, can be little, the high resin of coefficient of elasticity under the normal temperature by the molecular weight between the crosslinking points that in the Thermocurable bond layer, contains polyimide resin and phenolic resins etc.
Here, can utilize DMA[dynamic mechanically analyzer (Dynamic Mechanical Analyzer)] measure the loss resilience coefficient and store coefficient of elasticity.The loss resilience coefficient is described in an embodiment and stores the measuring condition of coefficient of elasticity.
[material that bond layer uses]
Being used for the material that the bond layer of Thermocurable bond layer uses, is to have Yin Re and the bonding agent of the character of solidifying, and as this material, can enumerate, and for example, contains the material of polyamide and curable resin.
[polyamide]
Polyamide preferably utilizes aliphatic diamine and the unrighted acid dimer polycondensation of carbon number more than 4 synthetic.Can enumerate butanediamine, five methylene diamine, hexamethylene diamine, eight methylene diamine, decamethylene diamine, ten dimethylene diamines etc. as the object lesson of the aliphatic diamine of carbon number more than 4 this moment.Wherein the aliphatic diamine of carbon number 4～18 is better, and the aliphatic diamine of carbon number 4～12 is better, and the aliphatic diamine of carbon number 6～12 is best.Like this, compare with existing ethylenediamine, owing to used the aliphatic diamine of more carbon numbers (long molecule), even therefore the Thermocurable bond layer also demonstrates high viscosity (cementability) when high temperature, and, therefore can obtain the adherence force good with insulating film owing to demonstrate high bonding force.And, when damp and hot, also can obtain good high-insulativity even contain the Thermocurable bond layer of polyamide, and heat-shrinkable has reduced also.
For the unrighted acid dimer, with regard to flexible, connectivity and agent of low hygroscopicity, preferably use the unrighted acid dimer of carbon number 36.The unrighted acid dimer of carbon number 36 can obtain by the unrighted acid of condensation carbon number 18.Unrighted acid as this carbon number 18 for example has oleic acid, linoleic acid, leukotrienes etc.Wherein, preferred especially linoleic acid reaches bigger than 0.25MPa/ μ m owing to adjust above-mentioned (loss resilience coefficient * 1/ thickness) easily, and preferably is made of the linoleic acid of 99.1～80 quality % and oleic acid and the leukotrienes of 0.1～20 quality %.
In addition, during the synthesizing polyamides resin, except that the aliphatic diamine and unrighted acid dimer of carbon number more than 4, can also use as the sour composition more than the small amount of trifunctional of submember, the synthetic branch-like polyamide of amine component more than the trifunctional.As the sour composition more than the trifunctional of submember (or trifunctional above amine component), preferably in 20 moles of % of the complete sour composition in the polyamide (or full amine component), at 10 moles of % with interior better.If submember surpasses 20 moles of %, the flexible variation of the Thermocurable bond layer after solidifying so.
With regard to the dissolubility of solvent, the quality mean molecule quantity of polyamide is preferably 500～50000, and more preferably 1000～20000.Measure the quality mean molecule quantity with gel osmoticing chromatogram analysis method (GPC) method.In addition, the amine value of polyamide is preferably 0.5～60, is preferably 5～60.If the amine value is less than 0.5, the residual of unreacted amino if the amine value surpasses 60, taken place and pollutes circuit in electric insulating quality easy variation so easily so, and causes easily in conjunction with problem such as bad.In addition, if use 2 kinds of different polyamides of amine value, because therefore the flexible of the Thermocurable bond layer after control is solidified easily is preferred.Here, for the amine value of polyamide, be polyamide with the mixed solution of toluene/n-butanols dissolving 1g,, as titrating solution, represent as indicator with 0.1% methanol solution of bromocresol green with the hydrochloric acid of 0.1N with the mg of the potassium hydroxide of equivalent.
In addition, for the molecular weight between the amide groups of polyamide (the molecular weight summation of acid and diamines is removed 2), the normal temperature cohesiveness of the bonding agent for 250～400 descends, guaranteed flatness, semiconductor does not take place because of curling that the Thermocurable bond layer causes at normal temperatures with splicing tape as a result, improve operability, so be preferred.
[curable resin]
Introduce below and constitute the curable resin of bond layer with material.
Curable resin can use the resin that has as curable such as Thermocurable, photo-curables.Wherein, owing to heat-curing resin, particularly phenolic resins, epoxy resin, imide resin, can obtain good electric insulating quality and high-fire resistance, be preferred therefore.For phenolic resins, specifiable have, for example, (ノ ボ ラ Star Network Off エ ノ-Le) resin such as the novolac-type of alkyl phenolic resin, p-phenyl phenol urea formaldehyde, bisphenol A-type phenolic resins etc. and resol, polyphenylene Pyrogentisinic Acid's (Port リ Off エ ニ Le パ ラ Off エ ノ-Le) resin etc.Particularly, because resol can obtain high-fire resistance, having the effect that makes epoxy resin cure described later, is preferred therefore.Phenolic resins is for obtaining the stable on heating important component of Thermocurable bond layer, and the quality mean molecule quantity is 2000～50000, is preferably 2000～15000, is preferably 2000～8000, can obtain good thermal endurance, so be preferred.And the softening point of phenolic resins can further improve thermal endurance more than 151 ℃, so be preferred.
In addition, for epoxy resin, can use as long as have the resin of 2 above epoxy radicals.Particularly, can enumerate, for example, 2 officials of the bisphenol-type epoxy resin of bisphenol A-type, Bisphenol F type, bisphenol S type etc., naphthalene type epoxy resin, solubility phenolic varnish type (Off エ ノ-Le ノ ボ ラ Star Network) epoxy resin, cresols phenolic resin varnish type epoxy resin, four glycidol phenolic aldehyde alkane type epoxy resin, bisglycidyl phenolic aldehyde propane type epoxy resin, glycidyl amine type epoxy resin, trihydroxy benzene methane type epoxy resin etc. can or polyfunctional epoxy resin, especially preferably use the polyfunctional epoxy resin of excellent heat resistance.
In addition, for imide resin, preferably use the resin of bismaleimides series etc.
In addition, for the material that bond layer uses, can use above-mentioned phenolic resins, epoxy resin, imide resin curable resin composition in addition simultaneously.And then, also can contain polyamines, acid anhydrides, imidazolium compounds as curing accelerator.And, for the Thermocurable bond layer, containing among the resinous principle of curable resin, the content of polyamide is 20～80 quality %, be preferred with regard to thermal endurance and chemical reagent resistance, and more preferably the person is 30～70 quality %.
In addition, in the Thermocurable bond layer, except polyamide and curable resin, also can contain thermoplastic resin.Owing to contain thermoplastic resin, can give the Thermocurable bond layer flexible after the curing.As thermoplastic resin, specifiable have, the polyamide different with the composition of aforementioned polyamide (for example, with the polyamide of the aliphatic diamine of atomicity below 3 as the condensation composition); The copolymer of carboxylic acrylonitrile-butadiene, contain amino acrylonitrile-butadiene copolymer, contain the copolymer, thermoplastic polyester, acrylic rubber, Styrene-Butadiene etc. of acrylonitrile-butadiene of copolymer etc. of the acrylonitrile-butadiene of glycidyl, if contain the functional group's of amino, carboxyl, hydroxyl etc. thermoplastic resin, since easier control flexible, therefore preferred the use.
In addition, in the Thermocurable bond layer, can also contain the following filler of average grain diameter 1 μ m.For filler can use the inorganic filler of silica, titanium oxide, aluminium oxide, silicon nitride, talcum powder, silica flour, magnesium oxide etc., in the organic filler that forms by the toner of polyorganosiloxane resin, polyamide, phenolic resins etc. any one, preferably use the filler of the insulating properties in these.For the resin solid composition of 100 mass parts, the addition that adds filler can arrive the scope of 30 mass parts.
[manufacturing of semiconductor device by using splicing tape]
When making semiconductor device by using splicing tape of the present invention, material with the above-mentioned bond layer use of organic solvent dissolution, make the resin combination of liquid condition through mixing, on the single face at least of insulating film with said composition as coating apply, stacked, the dry Thermocurable bond layer that forms.The preferred 3 μ m of the dried thickness of Thermocurable bond layer～150 μ m, more preferably 8 μ m～20 μ m.The Thermocurable bond layer is preferably dry semi-cured state.
When making semiconductor device by using splicing tape of the present invention, on insulating film, can directly apply liquid resin combination, also can fit on the insulating film being coated in the adhesive sheet that obtains on the interim supporter of fissility film etc.
For modulating the organic solvent that liquid resin composition preferably uses, having for example, N-N-methyl-2-2-pyrrolidone N-, N, N-dimethylacetylamide, N, dinethylformamide, methyl ethyl ketone, methyl iso-butyl ketone (MIBK), toluene, dimethylbenzene, 1,4-dioxane, oxolane, ethanol, isopropyl alcohol, methyl cellosolve etc.These organic solvents can use more than 2 kinds simultaneously.
In addition, diaphragm is set preferably on the surface of Thermocurable bond layer, when using semiconductor device by using splicing tape of the present invention, uses after peeling off this diaphragm.As diaphragm, can use the film of PETG and polyolefin etc., the preferred use by organosilicon etc. carried out the film that lift-off processing is given fissility.
Embodiment
The present invention is described by the following examples.
[embodiment 1]
On the single face of the diaphragm that the PETG film by the thickness 38 μ m that pass through lift-off processing constitutes, be the bond layer coating that 12 μ m ground apply following composition with dried thickness, make bonding film at 130 ℃ through 5 minutes dryings.
Subsequently, the overlapping insulating film that is made of the polyimides of thickness 75 μ m on bonding film is at 100 ℃ and 1kg/cm
2Condition under make semiconductor device by using splicing tape of the present invention through thermo-compression bonding.
(forming the coating that bond layer uses)
The iso-propanol/toluene mixed solution that mixes the polyamide (amine value 20, quality mean molecule quantity 2800) that unrighted acid dimer that the oleic acid with by the linoleic acid of 90 quality % and 10 quality % of 25 quality % obtains and hexamethylene diamine form as the condensation polymerization composition: 64 mass parts
The naphthalene type epoxy resin (trade name that big Japanese イ Application キ chemical industrial company makes: methyl ethyl ketone solution エ ピ Network ロ Application HP7200): 15 mass parts of mixing 50 quality %
Novolac-type resin (the clear trade name made from macromolecule company: methyl ethyl ketone solution CKM2400): 6.5 mass parts of mixing 50 quality %
Novolac-type resin (the clear trade name made from macromolecule company: methyl ethyl ketone solution ELS373Z): 13 mass parts of mixing 50 quality %
The methyl ethyl ketone solution that mixes the 2-ethyl-4-methylimidazole of 1 quality %: 3 mass parts
[embodiment 2]
Use the material of forming below except forming with coating, use the mode identical to make semiconductor device by using splicing tape of the present invention with embodiment 1 as bond layer.The thickness of bond layer is 20 μ m.
(forming the coating that bond layer uses)
The iso-propanol/toluene mixed solution that mixes the polyamide (amine value 50, quality mean molecule quantity 2300) that unrighted acid dimer that the oleic acid with by the linoleic acid of 85 quality % and 15 quality % of 25 quality % obtains and hexamethylene diamine form as the condensation polymerization composition: 47 mass parts
The methyl ethyl ketone mixed solution that mixes the polyamide (amine value 15, quality mean molecule quantity 8000) that unrighted acid dimer that the oleic acid with by the linoleic acid of 80 quality % and 20 quality % of 50 quality % obtains and hexamethylene diamine form as the condensation polymerization composition: 20 mass parts
Novolac-type resin (the clear trade name made from macromolecule company: methyl ethyl ketone solution CKM908A): 33 mass parts of mixing 50 quality %
[embodiment 3]
Use the material of forming below except forming with coating, with making semiconductor device by using splicing tape of the present invention with embodiment 1 identical mode as bond layer.The thickness of bond layer is 12 μ m.
(forming the coating that bond layer uses)
The iso-propanol/toluene mixed solution that mixes the polyamide (amine value 20, quality mean molecule quantity 2300) that unrighted acid dimer that the leukotrienes with by the linoleic acid of 80 quality % and 20 quality % of 25 quality % obtains and hexamethylene diamine form as the condensation polymerization composition: 64 mass parts
The naphthalene type epoxy resin (trade name that big Japanese イ Application キ chemical industrial company makes: methyl ethyl ketone solution エ ピ Network ロ Application HP7200): 15 mass parts of mixing 50 quality %
Novolac-type resin (the clear trade name made from macromolecule company: methyl ethyl ketone solution CKM2400): 6.5 mass parts of mixing 50 quality %
Novolac-type resin (the clear trade name made from macromolecule company: methyl ethyl ketone solution ELS373Z): 13 mass parts of mixing 50 quality %
The methyl ethyl ketone solution that mixes the 2-ethyl-4-methylimidazole of 1 quality %: 3 mass parts
[embodiment 4]
Use the material of forming below except forming with coating, with making semiconductor device by using splicing tape of the present invention with embodiment 1 identical mode as bond layer.The thickness of bond layer is 8 μ m.
(forming the coating that bond layer uses)
The iso-propanol/toluene mixed solution that mixes the polyamide (trade name that ヘ Application ケ Le ヅ ヤ パ Application company makes: マ Network ロ メ Le ト 6238, amine value 7, quality mean molecule quantity 8000) of 25 quality %: 40 mass parts
The tetrahydrofuran solution that mixes the polyimide resin (quality mean molecule quantity 40000) of 30 quality %: 22 mass parts
The naphthalene type epoxy resin (trade name that big Japanese イ Application キ chemical industrial company makes: methyl ethyl ketone solution エ ピ Network ロ Application HP7200): 20 mass parts of mixing 50 quality %
Novolac-type resin (the clear trade name made from macromolecule company: methyl ethyl ketone solution CKM2400): 6.5 mass parts of mixing 50 quality %
The methyl ethyl ketone solution that mixes the 2-ethyl-4-methylimidazole of 1 quality %: 3 mass parts
[embodiment 5]
Use the material of forming below except forming with coating, with making semiconductor device by using splicing tape of the present invention with embodiment 1 identical mode as bond layer.The thickness of bond layer is 3 μ m.
(forming the coating that bond layer uses)
The iso-propanol/toluene mixed solution that mixes the polyamide (trade name that ヘ Application ケ Le ヅ ヤ パ Application company makes: マ Network ロ メ Le ト 6900, acid number 2, amine value 0.5, quality mean molecule quantity 55000) of 25 quality %: 63 mass parts
Epoxy resin (the trade name that oiling シ エ Le company makes: methyl ethyl ketone solution エ ピ コ-ト 1001): 20 mass parts of mixing 50 quality %
Novolac-type resin (the clear trade name made from macromolecule company: methyl ethyl ketone solution CKM2400): 13 mass parts of mixing 50 quality %
The methyl ethyl ketone solution that mixes the 2-ethyl-4-methylimidazole of 1 quality %: 5 mass parts
[comparative example 1]
Use the material of forming below except forming with coating, with making the relatively semiconductor device by using splicing tape of usefulness with embodiment 1 identical mode as bond layer.The thickness of bond layer is 12 μ m.
(forming the coating that bond layer uses)
The iso-propanol/toluene mixed solution that mixes the polyamide (amine value 7, quality mean molecule quantity 10000) of 25 quality %: 40 mass parts
The tetrahydrofuran solution that mixes the polyimide resin (quality mean molecule quantity 40000) of 30 quality %: 22 mass parts
The naphthalene type epoxy resin (trade name that big Japanese イ Application キ chemical industrial company makes: methyl ethyl ketone solution エ ピ Network ロ Application HP7200): 20 mass parts of mixing 50 quality %
Novolac-type resin (the clear trade name made from macromolecule company: methyl ethyl ketone solution CKM2400): 6.5 mass parts of mixing 50 quality %
The methyl ethyl ketone solution that mixes the 2-ethyl-4-methylimidazole of 1 quality %: 5 mass parts
[comparative example 2]
Use the material of forming below except forming with coating, with making the relatively semiconductor device by using splicing tape of usefulness with embodiment 1 identical mode as bond layer.The thickness of bond layer is 12 μ m.
(forming the coating that bond layer uses)
The iso-propanol/toluene mixed solution that mixes the polyamide (trade name that ヘ Application ケ Le ヅ ヤ パ Application company makes: マ Network ロ メ Le ト 6900, acid number 2, amine value 0.5, quality mean molecule quantity 55000) of 25 quality %: 63 mass parts
Epoxy resin (the trade name that oiling シ エ Le company makes: methyl ethyl ketone solution エ ピ コ-ト 1001): 20 mass parts of mixing 50 quality %
Novolac-type resin (the clear trade name made from macromolecule company: methyl ethyl ketone solution CKM2400): 13 mass parts of mixing 50 quality %
The methyl ethyl ketone solution that mixes the 2-ethyl-4-methylimidazole of 1 quality %: 5 mass parts
[comparative example 3]
Make the relatively semiconductor device by using splicing tape of usefulness with mode similarly to Example 1.And the thickness of bond layer is 100 μ m.
[the loss resilience coefficient of Thermocurable bond layer and storage coefficient of elasticity]
Peel off after the diaphragm of semiconductor device by using splicing tape of embodiment 1～5 and comparative example 1～3, on one side the laminated body that constitutes by insulating film and Thermocurable bond layer 80 ℃ of heating, the Thermocurable bond layer peeled off from insulating film on one side.Then, when making test body described later, make Thermocurable bond layer and electrolytic copper foil bonding, and under the condition of heating, Thermocurable bond layer monomer is heating and curing.For the Thermocurable bond layer after the hot curing, next use DMA[dynamic mechanically analyzer (Dynamic Mechanical Analyzer)] measure the loss resilience coefficient and store coefficient of elasticity, the result when table 1 and table 2 show 200 ℃.For DMA, use electronic vibration (バ イ Block ロ Application) analyzer (the RHEOVIBRON DDV-II-EP that オ リ エ Application テ シ Network company makes), under frequency 110Hz, 3 ℃/min of intensification temperature, load capacity 5.0g, measure.The wide 0.5cm of sample, long 3cm, and thickness is the thickness of the bond layer after applying.
[assessment of the splicing tape of semiconductor device by using]
(1) preparation of test body
Peel off the diaphragm of the semiconductor device by using splicing tape of embodiment 1～5 and comparative example 1～3, at 130 ℃, 1kg/cm
2Condition under, the thick electrolytic copper foil of about 18 μ m is fitted on the surface of Thermocurable bond layer as laminated body.After this, constant heatingrate's laminate heated body is 8 hours from 70 ℃ to 160 ℃, again in 170 ℃ of heating 6 hours, heat of solidification curable bond layer.Then, stacked photoresist film on Copper Foil again, carry out exposure figure, etching, nickel plating, gold-plated, form the bond pad that wire bond is used.Thus, obtaining by gold-plated thickness is the circuit-formed test body of 0.5 μ m.
(2) characteristic evaluation
1. wire bond
Embodiment 1～and pipe core welding disc (the ダ イ パ Star De) position of the test body of comparative example 1～3 on the IC chip is set after, connect aluminium electrode part and bond pad part on the IC chip by the ball bond method with gold thread.
Afterwards, with the gold thread that the backguy tester stretches and connects, measure bond strength, according to backguy strength assessment wire bond, the result is presented in table 1 and the table 2.And no problem backguy intensity is the level of 8gf when using.Wire bond also depends on temperature, carries out under 200 ℃ of lower frequency 60kHz.
Table 1
| Loss resilience coefficient (MPa) | Bond layer thickness (μ m) | Loss resilience coefficient * (1/ bonding agent bed thickness) (Mpa/ μ m) | Backguy intensity (gf) | |
| Embodiment 1 | ????21 | ????12 | ?????1.75 | ????8.5 |
| Embodiment 2 | ????16 | ????20 | ?????0.80 | ????8.2 |
| Embodiment 3 | ????12 | ????12 | ?????1.00 | ????8.5 |
| Embodiment 4 | ????3 | ????8 | ?????0.38 | ????8.2 |
| Embodiment 5 | ????1 | ????3 | ?????0.33 | ????8.1 |
| Comparative example 1 | ????3 | ????12 | ?????0.25 | ????7.5 |
| Comparative example 2 | ????1 | ????12 | ?????0.08 | ????4.0 |
| Comparative example 3 | ????21 | ????100 | ?????0.21 | ????5.5 |
Line drawing intensity is saturated to 9gf from about 8.
Table 2
| Store coefficient of elasticity (MPa) | Bond layer thickness (μ m) | Store coefficient of elasticity * (1/ bond layer thickness) (Mpa/ μ m) | Backguy intensity (gf) | |
| Embodiment 1 | ????90 | ????12 | ??????7.5 | ????8.5 |
| Embodiment 2 | ????45 | ????20 | ??????2.25 | ????8.2 |
| Embodiment 3 | ????40 | ????12 | ??????3.3 | ????8.5 |
| Embodiment 4 | ????10 | ????8 | ??????1.25 | ????8.2 |
| Embodiment 5 | ????3.6 | ????3 | ??????1.2 | ????8.1 |
| Comparative example 1 | ????10 | ????12 | ??????0.83 | ????7.5 |
| Comparative example 2 | ????3.6 | ????12 | ??????0.3 | ????4.0 |
| Comparative example 3 | ????90 | ????100 | ??????0.9 | ????5.5 |
Line drawing intensity is saturated to 9gf from about 8.
As can be seen, for semiconductor device by using splicing tape of the present invention, backguy intensity is more than the 8g from table 1 and table 2, and no problem level when being practicality.Particularly, think in the past because of the low bond layer that is not suitable for wire bonding of coefficient of elasticity, owing to make the thin thickness of this bond layer, so can guarantee wire bond.
Industrial applicibility
More than introduced the splicing tape that semiconductor devices of the present invention uses, it is the splicing tape that forms the semiconductor devices use of Thermocurable bond layer at least one side of insulating film, because the inverse of the thickness of described Thermocurable bond layer and the product of the loss resilience coefficient of the Thermocurable bond layer after the heat cure under 200 ℃ are greater than 0.25MPa/ μ m, so can obtain outstanding wire bond. By with this semiconductor device by using splicing tape, more to use in the semiconductor packages of densification at BGA, CSP etc., operability is excellent, and has improved the connection reliability of line, can obtain the semiconductor packages of high reliability.
In addition, the splicing tape that semiconductor device according to the invention is used, if the product of the inverse of the thickness of described Thermocurable bond layer and the storage coefficient of elasticity of the Thermocurable bond layer after the heat cure under 200 ℃ then has good wire bond greater than 1MPa/ μ m.
Claims (4)
1. the splicing tape that uses of a semiconductor device, this splicing tape have insulating film and are arranged on Thermocurable bond layer on the one side at least of this insulating film,
The product of the inverse of the thickness of described Thermocurable bond layer and the loss resilience coefficient of the Thermocurable bond layer after the hot curing under 200 ℃ is greater than 0.25MPa/ μ m.
2. the splicing tape that uses according to the semiconductor device of claim 1, the product of the inverse of the thickness of described Thermocurable bond layer and the storage coefficient of elasticity of the Thermocurable bond layer after the hot curing under 200 ℃ is greater than 1MPa/ μ m.
3. the splicing tape that uses according to the semiconductor device of claim 1, described Thermocurable bond layer contains polyamide,
This polyamide is that the unrighted acid dimer with carbon number 36 obtains.
4. the splicing tape that uses according to the semiconductor device of claim 3, the unrighted acid dimer of described carbon number 36 obtains with linoleic acid.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP325431/2002 | 2002-11-08 | ||
| JP2002325431A JP3811120B2 (en) | 2002-11-08 | 2002-11-08 | Adhesive tape for semiconductor devices |
| JP325431/02 | 2002-11-08 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1523651A true CN1523651A (en) | 2004-08-25 |
| CN1296979C CN1296979C (en) | 2007-01-24 |
Family
ID=32804661
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2003101240714A Expired - Lifetime CN1296979C (en) | 2002-11-08 | 2003-11-06 | Adhesive tape for semiconductor device |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP3811120B2 (en) |
| KR (1) | KR100526624B1 (en) |
| CN (1) | CN1296979C (en) |
| TW (1) | TWI242593B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101527178B (en) * | 2008-03-04 | 2012-05-23 | 上海均达科技发展有限公司 | Heat shrinkage film interwoven fabric insulating protection belt |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5470690B2 (en) * | 2007-09-04 | 2014-04-16 | 株式会社デンソー | Bare chip mounting structure |
| JP5083070B2 (en) * | 2007-11-19 | 2012-11-28 | 日立化成工業株式会社 | Sealing film |
| US20110272185A1 (en) | 2009-01-28 | 2011-11-10 | Akiko Kawaguchi | Pregreg, film with resin, metal foil with resin, metal-clad laminate, and printed wiring board |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06181227A (en) * | 1992-12-14 | 1994-06-28 | Hitachi Chem Co Ltd | Adhesive and semiconductor device |
| KR19990067623A (en) * | 1995-11-28 | 1999-08-25 | 가나이 쓰도무 | Semiconductor device, manufacturing method and mounting board |
| TW340967B (en) * | 1996-02-19 | 1998-09-21 | Toray Industries | An adhesive sheet for a semiconductor to connect with a substrate, and adhesive sticking tape for tab, an adhesive sticking tape for wire bonding connection, a substrate for connecting with a semiconductor and a semiconductor device |
| JP2001081438A (en) * | 1999-09-14 | 2001-03-27 | Sony Chem Corp | Connecting material |
| JP3371894B2 (en) * | 1999-09-17 | 2003-01-27 | ソニーケミカル株式会社 | Connecting material |
-
2002
- 2002-11-08 JP JP2002325431A patent/JP3811120B2/en not_active Expired - Lifetime
-
2003
- 2003-11-06 TW TW092131052A patent/TWI242593B/en not_active IP Right Cessation
- 2003-11-06 KR KR10-2003-0078257A patent/KR100526624B1/en active IP Right Grant
- 2003-11-06 CN CNB2003101240714A patent/CN1296979C/en not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101527178B (en) * | 2008-03-04 | 2012-05-23 | 上海均达科技发展有限公司 | Heat shrinkage film interwoven fabric insulating protection belt |
Also Published As
| Publication number | Publication date |
|---|---|
| TWI242593B (en) | 2005-11-01 |
| KR20040041030A (en) | 2004-05-13 |
| JP2004158798A (en) | 2004-06-03 |
| CN1296979C (en) | 2007-01-24 |
| TW200420702A (en) | 2004-10-16 |
| JP3811120B2 (en) | 2006-08-16 |
| KR100526624B1 (en) | 2005-11-08 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN1216115C (en) | Resin composition, film with adhesive for semiconductor device and semiconductor device with laminated film of metal foil and using same | |
| CN1763145A (en) | Adhesive tape composition for electronic components | |
| CN1300845C (en) | Adhesive thin sheet for producing semiconductor device, semiconductor device and its producing method | |
| TWI460249B (en) | Adhesive composition, adhesive film, and method of producing semiconductor device | |
| JP2017204656A (en) | Adhesive sheet, and method for manufacturing semiconductor device | |
| CN1942502A (en) | Epoxy resin composition | |
| CN111372994B (en) | Film-like semiconductor sealing material | |
| WO2006103962A1 (en) | Semiconductor device, resin composition for buffer coating, resin composition for die bonding, and resin composition for encapsulation | |
| TWI648347B (en) | Packaging material and thin film | |
| JP2009283905A (en) | Semiconductor device and film-shaped adhesive | |
| JP2004319823A (en) | Adhesive film for semiconductor, semiconductor device and method for manufacturing the same | |
| JPH11265960A (en) | Semiconductor device with metal reinforcing material | |
| JP2008231287A (en) | Adhesive composition for semiconductor device, adhesive sheet using the same, tape with adhesive agent for semiconductor, and copper-clad laminate | |
| JP4161544B2 (en) | Adhesive film for mounting semiconductor elements | |
| KR20130045187A (en) | Thermal conductive adhesive composition, and adhesive sheet and thermal conductive dicing and die attach film using the same | |
| CN1296979C (en) | Adhesive tape for semiconductor device | |
| JP3617504B2 (en) | Adhesive film for mounting semiconductor elements | |
| JP3621337B2 (en) | Adhesive composition for semiconductor device and adhesive sheet | |
| JP3774419B2 (en) | Adhesive tape for semiconductor devices | |
| JP2005089678A (en) | Adhesive composition and adhesive film | |
| JP2008004751A (en) | Semiconductor device manufacturing method | |
| CN1280899C (en) | Mask sheet for assembling semiconductor device and method for assembling semiconductor device | |
| JP7373073B2 (en) | Underfill film for semiconductor packages and method for manufacturing semiconductor packages using the same | |
| JP6768188B2 (en) | Adhesive composition for adhesive film and its manufacturing method | |
| KR100482672B1 (en) | Adhesive composition for semiconductor package, and adhesive sheet and tape using the same |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CX01 | Expiry of patent term |
Granted publication date: 20070124 |
|
| CX01 | Expiry of patent term |