KR20040041030A - Adhesive tape for semiconductor apparatus - Google Patents

Abstract

PURPOSE: An adhesive tape for a semiconductor device is provided to improve a bonding characteristic by forming a thermosetting adhesive layer on at least one side of an insulating film. CONSTITUTION: An adhesive tape for semiconductor device includes an insulating film and a thermosetting adhesive layer. The thermosetting adhesive layer is disposed on at least one side of the insulating film. A product of an inverse of a thickness of the thermosetting adhesive layer and a loss elastic modulus of the thermosetting adhesive layer after thermosetting at 200 degrees is larger than 0.25 MPa/micrometers. Further, a product of an inverse of the thickness of the thermosetting adhesive layer and a retaining elastic modulus of the thermosetting adhesive layer after thermosetting at 200 degrees is larger than 1 MPa/micrometers. The thermosetting adhesive layer consists of a polyamide resin.

Description

Adhesive tape for semiconductor device

INDUSTRIAL APPLICABILITY The present invention is used in the assembly process of a semiconductor device, and is optimal for an interposer such as a tape for TAB, a ball grid array (BGA), and a chip scale package (CSP) used in a tape automated bonding (TAB) method suitable for high-density mounting of a device. The present invention relates to an adhesive tape for a semiconductor device used in a method of connecting a tape for in-carrier tape (Tape Carrier Package), a lead frame fixing tape, a lead frame, and a film carrier tape by wire bonding. The present invention relates to an adhesive tape for a semiconductor device that is optimal for a semiconductor device.

In recent years, there is an increasing demand for a compact, thin, lightweight, and high-density semiconductor device, and an IC (semiconductor integrated circuit) package having a plurality of pins constituting the core of an electronic component is connected locally in a conventional peripheral connection type. Is changing to a high-density IC package called BGA and CSP.

BGA and CSP have a faceted grid solder ball on the back of the package as external connection terminals. The IC is mounted on a circuit board (hereinafter, referred to as a redistribution board) for redistribution or the like to be an IC package (BGA, CSP) and mounted on a hard printed board which is a motherboard.

BGA can be roughly divided into plastic BGA (P-BGA) and tape BGA (T-BGA) according to the type of redistribution substrate. Among the T-BGAs, there are types of conventional TAB-based methods using inner lead bonding (ILB) and wire-bonding methods. The latter is particularly called fine pitch BGA (FBGA) or tape CSP (T-CSP). .

Conventionally, hard boards such as glass epoxy boards have been mainly used as redistribution boards in the BGA. However, in recent years, demands for light weight and thinning have increased along with the widespread use of mobile phones. Since tape substrates are easy to produce, T-BGA (TCP type and wire bonding type FBGA or T-CSP) using this tape substrate has been widely adopted. In particular, the T-CSP is expected to be further downsized by miniaturizing and narrowing the mounting area by using the fan-in method in the fan-out method of the conventional T-BGA.

As mentioned above, as a board | substrate used for these TAB system packages (TCP) and FBGA, the thing which laminated | stacked the metal foil through the adhesive agent to the polyimide film is used. And the adhesive used here requires flexibility and adhesiveness.

In addition, regarding the T-CSP of the wire bonding method, when the aluminum electrode portion on the IC chip provided on the tape substrate at the time of bonding and the electrode wiring portion (pad portion) on the TAB tape substrate are connected by gold wire or the like, Since the pressure from the overbonding tool is applied, the hardness at high temperatures is required for the adhesive. In other words, in order for the tape substrate to have good wire bonding property, some degree of hardness is required for the adhesive at high temperatures.

In addition, since the tape substrate is a package substrate, insulation reliability such as mountability such as general reflow, insulation such as copper migration, and other reliability are required.

Conventionally, as said adhesive agent, the epoxy resin / NBR (acrylonitrile butadiene copolymer) type | system | group adhesive (Japanese Unexamined-Japanese-Patent No. 6-181227 (page 2-5)) containing a thermosetting resin, and a silicone type adhesive agent are used, come. Among them, epoxy resins / NBR adhesives are not limited to the above substrates due to low cost, ease of use, and the like. However, a tape substrate using an epoxy resin / NBR adhesive has problems in wire bonding properties such as pad part sinking due to softness of NBR during wire bonding and wire not sticking to the pad part. Moreover, there existed a problem in reflow property, wire bonding property, and insulation property in a long time temperature change or high temperature, high humidity. This is because NBR uses the diene compound as a starting material, and when exposed to high temperatures for a long time, double bonds contained in the main chain are cleaved by oxidation, gradually losing elasticity and losing the stress relaxation effect, thereby causing problems in connection reliability in solder balls. Because it happens. Further, when fine pitching of the wiring board proceeds, a problem of copper migration occurs due to attraction of copper ions by NBR acrylonitrile group under high temperature and high humidity.

SUMMARY OF THE INVENTION An object of the present invention is to provide an adhesive tape for a semiconductor device in which a problem with a conventional adhesive is solved, that is, excellent in wire bonding.

Conventionally, it was considered that the wire bonding property of the adhesive tape for semiconductor devices is determined only by the storage modulus of the adhesive. The thickness of the adhesive is also defined as a general thickness, but this was not a setting considering the wire bonding property.

As a result of careful examination by the present inventors, it was found that even if the storage modulus or loss modulus is low, the wire bonding property of the adhesive tape for semiconductor devices is improved by reducing the thickness of the adhesive.

That is, the adhesive tape for a semiconductor device of this invention is an adhesive tape for a semiconductor device which has an insulating film and the thermosetting adhesive bond layer provided in at least one surface of the said insulating film, and the reciprocal of the thickness of the said thermosetting adhesive layer, and the thermosetting adhesive bond layer after thermosetting The product of the loss modulus at 200 ° C. is greater than 0.25 MPa / μm.

Moreover, in the adhesive tape for semiconductor devices of this invention, it is preferable that the product of the reciprocal of the thickness of the said thermosetting adhesive bond layer, and the storage modulus at 200 degreeC of the thermosetting adhesive bond layer after thermosetting is larger than 1 MPa / micrometer.

The thermosetting adhesive layer preferably contains a polyamide resin, and the polyamide resin is preferably obtained by using an unsaturated fatty acid dimer having 36 carbon atoms.

Moreover, it is preferable that the said C36 unsaturated fatty acid dimer was obtained using linoleic acid.

EMBODIMENT OF THE INVENTION Hereinafter, this invention is demonstrated in detail.

[Adhesive Tape for Semiconductor Device]

The adhesive tape for a semiconductor device of the present invention has a thermosetting adhesive layer formed on at least one surface of an insulating film, and has a reciprocal of the thermosetting adhesive layer thickness (μm) and a loss modulus (MPa) at 200 ° C. of the thermosetting adhesive layer after curing. The total (loss modulus x 1 / thickness) is larger than 0.25 MPa / μm.

[Insulating film]

The insulating film of the present invention is a film having electrical insulation. As an insulating film, films, such as a polyimide, a polyethylene terephthalate, a polyolefin, a polyamideimide, a polyetherimide, polyphenylene sulfide, a polyether ketone, can be used, for example. Especially, since a polyimide film is excellent in insulation and heat resistance, it is preferable. Polyimide films are commercially available, and Toray DuPont's trade name: Kafton, Ube Industries Co., Ltd.'s trade name: Eupyrex, Kaneka Chemical Corporation's trade name: Apical and the like are mainly used.

The thickness of the insulating film is preferably 20 µm to 200 µm, more preferably 25 µm to 125 µm. When the thickness of the insulating film is less than 20 μm, the operability is deteriorated due to the lack of hardness of the adhesive tape for semiconductor devices, and when it is thicker than 200 μm, it is difficult to obtain a small semiconductor device.

Thermosetting Adhesive Layer

In the present invention, the thermosetting adhesive layer is a layer made of an adhesive having a property of being cured by heat.

In the thermosetting adhesive layer of the present invention, the product (loss modulus x 1 / thickness) of the reciprocal of the thickness (μm) and the loss modulus (MPa) at 200 ° C. of the thermosetting adhesive layer after thermosetting is more than 0.25 MPa / μm. It is characterized by large. In other words, even if the loss modulus is low, the thickness of the adhesive can be reduced to improve the wire bonding property. The wire bonding property is determined by the product of the loss modulus of the adhesive layer and the inverse of the adhesive layer thickness. More preferably, the product of the inverse of the thickness of the thermosetting adhesive layer and the loss modulus at 200 ° C. of the thermosetting adhesive layer after thermosetting is 0.6 MPa / μm or more.

When the product of the reciprocal of the thickness of the thermosetting adhesive layer and the loss modulus at 200 ° C. of the thermosetting adhesive layer after thermosetting is 0.25 MPa / μm or less, the gold wire during the wire bonding process does not adhere to the pad portion, or Since the pad part is not sufficiently connected, a problem occurs that the gold wire is peeled off from the pad part after the wire bonding step. In addition, after thermosetting here, the thing heat-processed for 1 to 10 hours at 150-170 degreeC by adding a temperature from a low temperature of about 70 degreeC by a predetermined program. This can be achieved by containing low molecular weight reactive substances such as polyamide resins, polyamideimide resins, polyimide resins, or reactive curable substances such as phenol resins and epoxy resins.

The thickness of the thermosetting adhesive layer is preferably 3 µm or more in consideration of the embedding properties and adhesive strength of the adhesive on the uneven surface of the copper foil for circuit, and the loss modulus at that time is about 0.75 MPa. In the case where the thermosetting adhesive layer has a high static elastic modulus, a phenomenon such as curling is likely to occur due to the difference in thermal expansion and static elastic modulus of the adhesive and the insulating film, and considering the thinning of the package, the thickness of the thermosetting adhesive layer is thin. It is preferable.

The thermosetting adhesive layer preferably has a product (storage modulus x 1 / thickness) of a reciprocal of its thickness (μm) and a storage modulus (MPa) at 200 ° C. of the thermosetting adhesive layer after thermosetting being larger than 1 MPa / μm. . When the product of the reciprocal of the thickness of the thermosetting adhesive layer and the storage modulus at 200 ° C. of the thermosetting adhesive layer after thermosetting becomes 1 MPa / μm or less, it is difficult to sufficiently connect the gold wire and the pad during the wire bonding step.

The product of the reciprocal of the thickness of the thermosetting adhesive layer and the storage modulus at 200 ° C. of the thermosetting adhesive layer after thermal curing is particularly preferably larger than 3 MPa / μm, and preferably larger than 10 MPa / μm. In order to achieve the above, it is possible to make the thermosetting adhesive bond layer contain resin with a high elasticity modulus at normal temperature with small molecular weight between crosslinking points, such as a polyamide resin and a phenol resin.

Here, the loss modulus and the storage modulus can be measured by a DMA (Dynamic Mechanical Analyzer). The measurement conditions of the loss modulus and the storage modulus are described in the Examples.

[Adhesive Layer Material]

The adhesive layer material used for the thermosetting adhesive layer is an adhesive having a property of curing by heat, and examples of such materials include polyamide resins and curable resins.

[Polyamide Resin]

The polyamide resin is preferably synthesized by condensation of an aliphatic diamine having 4 or more carbon atoms with an unsaturated fatty acid dimer. Specific examples of the aliphatic diamine having 4 or more carbon atoms in this case include butylenediamine, pentamethylenediamine, hexamethylenediamine, oxamethylenediamine, decamethylenediamine, dodecamethylenediamine, and the like. Especially, C4-18 aliphatic diamine is preferable, C4-12 aliphatic diamine is more preferable, C6-12 aliphatic diimine is still more preferable. By using an aliphatic diamine having a higher carbon number (longer molecule) than the conventional ethylene diamine, the thermosetting adhesive layer exhibits a high viscosity (adhesiveness) even at high temperatures, and also exhibits high adhesion, so that good adhesion to the insulating film can be obtained. . In addition, the thermosetting adhesive layer containing the polyamide resin can obtain excellent high insulation even when wet heat, and also has low heat shrinkability.

As the unsaturated fatty acid dimer, one having 35 carbon atoms is preferably used for flexibility, connectivity, and low hygroscopicity. An unsaturated fatty acid dimer having 36 carbon atoms can be obtained by condensing an unsaturated fatty acid having 18 carbon atoms. As said C18 unsaturated fatty acid, oleic acid, linoleic acid, linolenic acid, etc. can be obtained. Among these, linoleic acid is particularly preferable because it is easy to adjust the (loss modulus x 1 / thickness) to be larger than 0.25 MPa / μm, and is preferably 99.1 to 80% by mass of linoleic acid and 0.1 to 20% by mass of oleic acid or linolenic acid. It is preferable.

When synthesizing a polyamide resin, a branched polyamide resin may also be synthesized by using a small amount of trifunctional or higher trifunctional and trifunctional or higher amine components as minor components in addition to a C4 or higher aliphatic diamine and an unsaturated fatty acid dimer. It is possible. The trifunctional or higher trifunctional acid component (or trifunctional or higher trifunctional amine component) is preferably within 20 mol% of the total acid component (or total amine component) in the polyamide resin, and more preferably 10 mol% or less. When a subcomponent exceeds 20 mol%, the flexibility of the thermosetting adhesive bond layer after hardening will worsen.

The mass average molecular weight of the polyamide resin is preferably 500 to 50000 in terms of solubility in a solvent, and more preferably 1000 to 20000. The mass average molecular weight is measured by gel permeation chromatography (GPC) method. Moreover, as for the amine number of polyamide resin, 0.5-60 are preferable, More preferably, it is 5-60. If the amine value is less than 0.5, the electrical insulation tends to be poor, and if the amine value is more than 60, unreacted amine groups remain and the circuit is likely to be contaminated, which causes problems such as poor bonding. Moreover, it is preferable to use two types of polyamide resins with different amine numbers because the flexibility of the cured thermosetting adhesive layer can be easily controlled. Here, the amine number of the polyamide resin is made by dissolving 1 g of polyamine resin in a toluene / n-butanol mixture solution, using a brominecresol green 0.1% methanol solution as an indicator, and using 0.1 N hydrochloric acid as a titration solution. It is expressed in mg of potassium hydroxide equivalent.

The molecular weight (the total molecular weight of acid and diamine divided by 2) between the amide groups of the polyamide resin is 250 to 400, and the cohesive force at the room temperature of the adhesive decreases to ensure flatness. It is preferable because it improves workability without curl by the thermosetting adhesive layer at normal temperature of a tape.

[Curable Resin]

Next, curable resin which comprises the adhesive bond layer material is demonstrated.

Curable resin can be used as long as it is resin which has curability, such as thermosetting and photocurability, and since it is excellent in electrical insulation and high heat resistance excellent in thermosetting resin, especially a phenol resin, an epoxy resin, and an imide resin, it is preferable. Examples of the phenol resins include novolac phenol resins such as alkyl phenol resins, p-phenyl phenol resins, and bisphenol A phenol resins, resol phenol resins, and polyphenyl paraphenol resins. In particular, resol phenol resins are preferable because they have high heat resistance and have a function of curing the epoxy resin described later. Phenol resin is an important component in order to obtain the heat resistance of the thermosetting adhesive layer, and a mass average molecular weight of 2000-50000, preferably 2000-15000, more preferably 2000-8000 is preferable because heat resistance can be obtained. Moreover, since the softening point of a phenol resin is 151 degreeC or more, since heat resistance further improves, it is preferable.

Moreover, as epoxy resin, if it is resin which has two or more epoxy groups, it can be used. Specifically, bisphenol type epoxy resins such as bisphenol A type, bisphenol F type, bisphenol S type, naphthalene type epoxy resin, phenol novolak type epoxy resin, cresol novolak type epoxy resin, tetraglycidyl phenol alkane type epoxy resin, And difunctional or polyfunctional epoxy resins such as diglycidyl phenol propane type epoxy resin, glycidylamine type epoxy resin, and trihydroxyphenylmethane type epoxy resin, and polyfunctional epoxy resins having excellent heat resistance are particularly preferable. Is used.

Moreover, bismaleimide resin etc. are used suitably as imide resin.

Moreover, curable resin components other than the said phenol resin, an epoxy resin, and an imide resin can also be used together for the adhesive bond layer material. Moreover, you may contain a polyamine, an acid anhydride, and an imidazole compound as a hardening accelerator. Moreover, in a thermosetting adhesive bond layer, it is preferable in heat resistance and chemical-resistance that content of polyamide resin is 20-80 mass% in the resin component containing curable resin, and it is more preferable in it being 30-70 mass%.

The thermosetting adhesive layer may further contain a thermoplastic resin in addition to the polyamide resin and the curable resin. By including a thermoplastic resin, flexibility can be provided to the thermosetting adhesive bond layer after hardening. As the thermoplastic resin, a polyamide resin different from the composition of the polyamide resin (for example, a polyamide resin containing an aliphatic diamine having 3 or less carbon atoms as a condensation component); Acrylonitrile-butadiene copolymers such as carboxyl group-containing acrylonitrile-butadiene copolymer, amine group-containing acrylonitrile-butadiene copolymer, glycidyl group-containing acrylonitrile-butadiene copolymer; Thermoplastic polyester resins, acrylic rubbers, styrene-butadiene copolymers, and the like, and thermoplastic resins having functional groups such as amino groups, carboxyl groups, and hydroxyl groups are preferred because they allow for easier control of flexibility.

In addition, the thermosetting adhesive layer may contain a filler having an average particle diameter of 1 μm or less. As the filler, any of organic fillers made of resin powders such as inorganic fillers such as silica, titanium oxide, alumina, silicon nitride, talc, quartz powder and magnesium oxide, polysiloxane resin, polyimide resin and phenol resin can be used. Fillers are preferably used. The addition amount of a filler can be added in the range up to 30 mass parts with respect to 100 mass parts of resin solid content.

[Manufacture of Adhesive Tape for Semiconductor Device]

In preparing the adhesive tape for a semiconductor device of the present invention, the above adhesive layer material is dissolved and mixed with an organic solvent to form a liquid resin composition, and the composition is applied as a paint to at least one side of the insulating film, laminated and dried. A thermosetting adhesive layer is formed. The thickness after drying of a thermosetting adhesive bond layer becomes like this. Preferably it is 3 micrometers-150 micrometers, More preferably, they are 8 micrometers-20 micrometers. The thermosetting adhesive layer is preferably dried and left in a semi-cured state.

In the preparation of the adhesive tape for a semiconductor device of the present invention, the liquid resin composition may be applied directly to the insulating film, or the adhesive sheet obtained by coating and applying to a temporary support such as a peelable film may be attached together to the insulating film.

Preferred organic solvents for the preparation of liquid resin compositions include N-methyl-2-pyrrolidone, N, N-dimethylacetamide, N, N-dimethylformamide, methyl ethyl ketone, methyl isobutyl ketone and toluene , Xylene, 1,4-dioxane, tetrahydrofuran, ethanol, isopropanol, methyl cellosolve and the like. These organic solvents can also use 2 or more types together.

Moreover, it is preferable to provide a protective film on the surface of a thermosetting adhesive bond layer, and when using the adhesive tape for semiconductor devices of this invention, this protective film is peeled off and used. As a protective film, films, such as polyethylene terephthalate and a polyolefin, can be used, The film which performed peeling process with silicone etc. and gave peelability is used preferably.

Example

Hereinafter, an Example demonstrates this invention.

Example 1

On one side of a protective film made of a polyethylene terephthalate film having a thickness of 38 μm, a peeling treatment was applied, a coating material for forming an adhesive layer having the following composition was applied so as to have a thickness of 12 μm after drying, and dried at 130 ° C. for 5 minutes to prepare an adhesive film. .

Subsequently, an insulating film made of a polyimide film having a thickness of 75 μm was superimposed on the adhesive film, and heated and pressed under conditions of 100 ° C. and 1 kg / cm ² to prepare an adhesive tape for a semiconductor device of the present invention.

(Glue for Adhesive Layer Formation)

Isopropyl alcohol / toluene containing 25% by mass of a polyamide resin (amine number 20, mass average molecular weight 2800) containing a condensation component of an unsaturated fatty acid dimer obtained from 90% by mass linoleic acid and 10% by mass oleic acid and hexamethylenediamine. Mixed solution: 64 parts by mass

Methyl ethyl ketone solution in which 50 mass% of naphthalene type epoxy resins (made by Nippon Ink Chemical Co., Ltd., brand name: Epiclone HP7200) are mixed: 15 mass parts

Methyl ethyl ketone solution obtained by mixing 50% by mass of a novolac phenolic resin (trade name: CKM2400, manufactured by Showa Polymer Co., Ltd.): 6.5 parts by mass

Methyl ethyl ketone solution obtained by mixing 50% by mass of a novolac phenolic resin (trade name: ELS373Z manufactured by Showa Polymer Corporation): 13 parts by mass

Methyl ethyl ketone solution containing 1% by mass of 2-ethyl-4-methylimidazole: 3 parts by mass

Example 2

The adhesive tape for a semiconductor device of this invention was produced like Example 1 except having used the thing of the following composition as a coating material for adhesive bond layer formation. The thickness of an adhesive bond layer is 20 micrometers.

(Glue for Adhesive Layer Formation)

Isopropyl alcohol, in which 25% by mass of an unsaturated fatty acid dimer obtained from 85% by mass of linoleic acid and 15% by mass of oleic acid and a polyamide resin containing 50% by mass of hexamethylenediamine (amine value 50, mass average molecular weight 2300) are mixed. Toluene mixed solution: 47 parts by mass

Methyl ethyl ketone solution obtained by mixing 50% by mass of an unsaturated fatty acid dimer obtained from 80% by mass of linoleic acid and 20% by mass of oleic acid and a polyamide resin (amine value 15, mass average molecular weight 8000) containing hexamethylenediamine as a condensation component. 20 parts by mass

Methyl ethyl ketone solution obtained by mixing 50% by mass of a novolac phenolic resin (trade name: CKM908A manufactured by Showa Polymer Co., Ltd.): 33 parts by mass

Example 3

The adhesive tape for a semiconductor device of this invention was produced like Example 1 except having used the thing of the following composition as coating material for adhesive bond layer formation. The thickness of an adhesive bond layer is 12 micrometers.

(Glue for Adhesive Layer Formation)

Isopropyl alcohol, in which 25% by mass of an unsaturated fatty acid dimer obtained from 80% by mass of linoleic acid and 20% by mass of linolenic acid and a polyamide resin (amine value 20, mass average molecular weight 2300) containing hexamethylenediamine as a condensation component Toluene mixed solution: 64 parts by mass

Methyl ethyl ketone solution in which 50 mass% of naphthalene type epoxy resins (made by Nippon Ink Chemical Co., Ltd., brand name: Epiclone HP7200) are mixed: 15 mass parts

Methyl ethyl ketone solution obtained by mixing 50% by mass of a novolac phenolic resin (trade name: CKM2400, manufactured by Showa Polymer Co., Ltd.): 6.5 parts by mass

Methyl ethyl ketone solution obtained by mixing 50% by mass of a novolac phenolic resin (trade name: ELS373Z manufactured by Showa Polymer Corporation): 13 parts by mass

Methyl ethyl ketone solution containing 1% by mass of 2-ethyl-4-methylimidazole: 3 parts by mass

Example 4

The adhesive tape for a semiconductor device of this invention was produced like Example 1 except having used the thing of the following composition as coating material for adhesive bond layer formation. The thickness of an adhesive bond layer is 8 micrometers.

(Glue for Adhesive Layer Formation)

Isopropyl alcohol / toluene mixed solution obtained by mixing 25% by mass of polyamide resin (manufactured by Henkel Japan, trade name: Macromelt 6238, amine number 7, mass average molecular weight 8000): 40 parts by mass

Tetrahydrofuran solution obtained by mixing 30% by mass of polyimide resin (mass average molecular weight 40000): 22 parts by mass

Methyl ethyl ketone solution containing 50% by mass of naphthalene type epoxy resin (manufactured by Nippon Ink Chemical Co., Ltd., trade name: Epiclone HP7200): 20 parts by mass

Methyl ethyl ketone solution obtained by mixing 50% by mass of a novolac phenolic resin (trade name: CKM2400, manufactured by Showa Polymer Co., Ltd.): 6.5 parts by mass

Methyl ethyl ketone solution containing 1% by mass of 2-ethyl-4-methylimidazole: 5 parts by mass

Example 5

The adhesive tape for a semiconductor device of this invention was produced like Example 1 except having used the thing of the following composition as coating material for adhesive bond layer formation. The thickness of an adhesive bond layer is 3 micrometers.

(Glue for Adhesive Layer Formation)

Isopropyl alcohol / toluene mixed solution obtained by mixing 25% by mass of polyamide resin (manufactured by Henkel Japan, trade name: Macromelt 6900, acid number 2, amine value 0.5, mass average molecular weight 55000): 63 parts by mass

Methyl ethyl ketone solution obtained by mixing 50% by mass of epoxy resin (manufactured by Emulsified Shell Co., Ltd., product name: Epicoat 1001): 20 parts by mass

Methyl ethyl ketone solution obtained by mixing 50% by mass of a novolac phenolic resin (trade name: CKM2400, manufactured by Showa Polymer Corporation): 13 parts by mass

Methyl ethyl ketone solution containing 1% by mass of 2-ethyl-4-methylimidazole: 5 parts by mass

Comparative Example 1

Except having used the thing of the following composition as a coating material for adhesive bond layers, it carried out similarly to Example 1, and produced the adhesive tape for semiconductor devices for comparison. The thickness of an adhesive bond layer is 12 micrometers.

(Glue for Adhesive Layer Formation)

Isopropyl alcohol / toluene mixed solution obtained by mixing 25% by mass of polyamide resin (amine value 7, mass average molecular weight 10000): 40 parts by mass

Tetrahydrofuran solution obtained by mixing 30% by mass of polyimide resin (mass average molecular weight 40000): 22 parts by mass

Methyl ethyl ketone solution containing 50% by mass of naphthalene type epoxy resin (manufactured by Nippon Ink Chemical Co., Ltd., trade name: Epiclone HP7200): 20 parts by mass

Methyl ethyl ketone solution obtained by mixing 50% by mass of a novolac phenolic resin (trade name: CKM2400, manufactured by Showa Polymer Co., Ltd.): 6.5 parts by mass

Methyl ethyl ketone solution containing 1% by mass of 2-ethyl-4-methylimidazole: 5 parts by mass

Comparative Example 2

The adhesive tape for a semiconductor device for comparison was produced like Example 1 except having used the following composition as a coating material for adhesive bond layers. The thickness of an adhesive bond layer is 12 micrometers.

(Glue for Adhesive Layer Formation)

Isopropyl alcohol / toluene mixed solution obtained by mixing 25% by mass of polyamide resin (manufactured by Henkel Japan, trade name: Macromelt 6900, acid value 2, amine value 0.5, mass average molecular weight 55000): 63 parts by mass

Methyl ethyl ketone solution obtained by mixing 50% by mass of epoxy resin (manufactured by Emulsified Shell Co., Ltd., product name: Epicoat 1001): 20 parts by mass

Methyl ethyl ketone solution obtained by mixing 50% by mass of a novolac phenolic resin (trade name: CKM2400, manufactured by Showa Polymer Corporation): 13 parts by mass

Methyl ethyl ketone solution containing 1% by mass of 2-ethyl-4-methylimidazole: 5 parts by mass

Comparative Example 3

In the same manner as in Example 1, a comparative adhesive tape for semiconductor devices was produced. The thickness of the adhesive layer is 100 m.

[Loss Modulus and Storage Modulus of Thermosetting Adhesive Layer]

After peeling the protective film of the adhesive tape for semiconductor devices of Examples 1-5 and Comparative Examples 1-3, the thermosetting adhesive bond layer is peeled off from an insulating film, heating the laminated body which consists of an insulating film and a thermosetting adhesive bond layer at 80 degreeC. did. Next, the thermosetting adhesive layer alone was heated and cured under the conditions in which the thermosetting adhesive layer was bonded to the electrolytic copper foil and heated when producing a test specimen to be described later. About the thermosetting adhesive bond layer after thermosetting, the loss modulus and storage modulus were measured using the following Dynamic Mechanical Analyzer (DMA), and the result at 200 degreeC is shown in Table 1 and Table 2. As a DMA, it measured by the frequency 110Hz, the temperature increase rate of 3 degree-C / min, and the load of 5.0g using the Vibronn measuring instrument (RHEOVIBRON DDV-II-EP by Orient Tech Co., Ltd.). The sample is 0.5 cm wide, 3 cm long and the thickness is the thickness of the applied adhesive layer.

[Evaluation of Adhesive Tape for Semiconductor Device]

(1) Preparation of test body

The protective film of the adhesive tape for semiconductor devices of Examples 1-5 and Comparative Examples 1-3 was peeled off, and the electrolytic copper foil of about 18 micrometers thickness was affixed on the thermosetting adhesive bond layer surface on 130 degreeC and 1 kg / cm <^2> conditions, and it was set as the laminated body. Thereafter, the laminate was heated at 70 ° C to 160 ° C for 8 hours at constant speed, and further heated at 170 ° C for 6 hours to cure the thermosetting adhesive layer. Subsequently, a photoresist film was laminated on the copper foil, pattern exposure, etching, nickel plating and gold plating were performed to form a bonding pad portion for wire bonding. In this way, the test body in which the circuit of gold-plating thickness is 0.5 micrometer was obtained.

(2) evaluation of characteristics

① wire bonding

After providing an IC chip on the die pad part in the test body of Examples 1-5 and Comparative Examples 1-3, the aluminum electrode part on IC chip and the bonding pad part on tape were connected by gold wire by the ball bonding method.

Next, the connected metal wires were pulled with a wire pull tester to measure the bonding strength, the wire bonding properties were evaluated with the wire pull strength, and the results are shown in Tables 1 and 2. In addition, the wire pull strength without practical problems is about 8 gf. Although wire bonding changes with temperature, it performed here at 200 degreeC and the frequency of 60 kHz.

Loss modulus (MPa) Adhesive layer thickness (μm) Loss modulus × (1 / adhesive layer thickness) (MPa / μm) Wire pull strength (gf) Example 1 21 12 1.75 8.5 Example 2 16 20 0.80 8.2 Example 3 12 12 1.00 8.5 Example 4 3 8 0.38 8.2 Example 5 One 3 0.33 8.1 Comparative Example 1 3 12 0.25 7.5 Comparative Example 2 One 12 0.08 4.0 Comparative Example 3 21 100 0.21 5.5

Wire pull strength is saturated between almost 8 to 9 gf.

Storage modulus (MPa) Adhesive layer thickness (μm) Storage modulus X (1 / adhesive layer thickness) (MPa / μm) Wire pull strength (gf) Example 1 90 12 7.5 8.5 Example 2 45 20 2.25 8.2 Example 3 40 12 3.3 8.5 Example 4 10 8 1.25 8.2 Example 5 3.6 3 1.2 8.1 Comparative Example 1 10 12 0.83 7.5 Comparative Example 2 3.6 12 0.3 4.0 Comparative Example 3 90 100 0.9 5.5

Wire pull strength is saturated between almost 8 to 9 gf.

As can be seen from Table 1 and Table 2, in the adhesive tape for a semiconductor device of the present invention, the wire pull strength is 8 g or more, which is a level without problems in practical use. In particular, it has been found that the wire bonding property is ensured by making the adhesive thickness thin even in the adhesive layer which is conventionally considered to be not suitable for wire bonding due to low elastic modulus.

As described above, the adhesive tape for a semiconductor device of the present invention is an adhesive tape for a semiconductor device having a thermosetting adhesive layer formed on at least one side of an insulating film, and the inverse of the thickness of the thermosetting adhesive layer, and the thermosetting adhesive layer after thermal curing. Since the product of the loss modulus at 200 ° C. is larger than 0.25 MPa / μm, excellent wire bonding property can be obtained. By using such an adhesive tape for semiconductor devices in semiconductor packages with high density such as BGA and CSP, it is possible to obtain a semiconductor package which is excellent in workability, improves the reliability of wire connection, and is more reliable.

Moreover, in the adhesive tape for semiconductor devices of this invention, when the product of the reciprocal of the thickness of the said thermosetting adhesive bond layer, and the storage elastic modulus at 200 degreeC of the thermosetting adhesive bond layer after thermosetting is larger than 1 MPa / micrometer, it has favorable wire bonding property.

Claims (4)

An insulating film and a thermosetting adhesive layer provided on at least one side of the insulating film, The adhesive tape for semiconductor devices whose product of the reciprocal of the thickness of the said thermosetting adhesive bond layer, and the loss elastic modulus at 200 degreeC of the thermosetting adhesive bond layer after thermosetting is larger than 0.25 MPa / micrometer. The adhesive tape for a semiconductor device according to claim 1, wherein a product of a reciprocal of the thickness of the thermosetting adhesive layer and a storage modulus at 200 ° C. of the thermosetting adhesive layer after thermosetting is larger than 1 MPa / μm. The method of claim 1, wherein the thermosetting adhesive layer contains a polyamide resin, Adhesive tape for semiconductor devices in which said polyamide resin is obtained using a C36 unsaturated fatty acid dimer. 4. The adhesive tape for a semiconductor device according to claim 3, wherein said C36 unsaturated fatty acid dimer is obtained using linoleic acid.