TWI242093B - Liquid crystal display device - Google Patents

Liquid crystal display device Download PDF

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Publication number
TWI242093B
TWI242093B TW089110783A TW89110783A TWI242093B TW I242093 B TWI242093 B TW I242093B TW 089110783 A TW089110783 A TW 089110783A TW 89110783 A TW89110783 A TW 89110783A TW I242093 B TWI242093 B TW I242093B
Authority
TW
Taiwan
Prior art keywords
electrode
insulating substrate
film
substrate
insulating
Prior art date
Application number
TW089110783A
Other languages
English (en)
Chinese (zh)
Inventor
Satoshi Kohtaka
Takafumi Hashiguchi
Yukio Endo
Original Assignee
Advanced Display Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced Display Kk filed Critical Advanced Display Kk
Application granted granted Critical
Publication of TWI242093B publication Critical patent/TWI242093B/zh

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Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1345—Conductors connecting electrodes to cell terminals

Landscapes

  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Liquid Crystal (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
TW089110783A 1999-06-15 2000-06-02 Liquid crystal display device TWI242093B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP16787299 1999-06-15
JP26695699A JP3916349B2 (ja) 1999-06-15 1999-09-21 液晶表示装置

Publications (1)

Publication Number Publication Date
TWI242093B true TWI242093B (en) 2005-10-21

Family

ID=26491786

Family Applications (1)

Application Number Title Priority Date Filing Date
TW089110783A TWI242093B (en) 1999-06-15 2000-06-02 Liquid crystal display device

Country Status (4)

Country Link
US (2) US6690442B1 (enExample)
JP (1) JP3916349B2 (enExample)
KR (1) KR100756901B1 (enExample)
TW (1) TWI242093B (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102566165A (zh) * 2010-12-20 2012-07-11 北京京东方光电科技有限公司 阵列基板及其制造方法和液晶显示器
US10014068B2 (en) 2011-10-07 2018-07-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device

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KR100673331B1 (ko) * 2000-02-19 2007-01-23 엘지.필립스 엘시디 주식회사 액정 표시장치 제조방법 및 그 제조방법에 따른액정표시장치
US6833900B2 (en) * 2001-02-16 2004-12-21 Seiko Epson Corporation Electro-optical device and electronic apparatus
KR100987714B1 (ko) * 2003-10-20 2010-10-13 삼성전자주식회사 하부기판, 이를 갖는 표시장치 및 이의 제조방법
US7309922B2 (en) 2003-10-20 2007-12-18 Samsun Electronics Co., Ltd. Lower substrate, display apparatus having the same and method of manufacturing the same
KR100987723B1 (ko) * 2003-11-06 2010-10-13 삼성전자주식회사 하부기판의 제조방법
KR100987713B1 (ko) * 2003-11-03 2010-10-13 삼성전자주식회사 하부기판, 이를 갖는 표시장치 및 이의 제조방법
EP1827221A4 (en) * 2004-11-24 2009-08-26 Fonar Corp IMMOBILIZATION ARMATURE FOR MAGNETIC RESONANCE TOMOGRAPHY
KR100683791B1 (ko) 2005-07-30 2007-02-20 삼성에스디아이 주식회사 박막 트랜지스터 기판 및 이를 구비한 평판 디스플레이장치
KR101298693B1 (ko) * 2006-07-19 2013-08-21 삼성디스플레이 주식회사 액정표시패널 및 이의 제조 방법
KR101252004B1 (ko) * 2007-01-25 2013-04-08 삼성디스플레이 주식회사 박막 트랜지스터 표시판 및 그 제조 방법
JP4968214B2 (ja) * 2007-09-28 2012-07-04 カシオ計算機株式会社 液晶表示装置
WO2010032639A1 (en) * 2008-09-19 2010-03-25 Semiconductor Energy Laboratory Co., Ltd. Display device and manufacturing method of the same
KR101999970B1 (ko) 2008-09-19 2019-07-15 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR102413263B1 (ko) 2008-09-19 2022-06-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치
KR20210148534A (ko) * 2020-05-29 2021-12-08 삼성디스플레이 주식회사 표시 장치

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW321731B (enExample) * 1994-07-27 1997-12-01 Hitachi Ltd
JP3225772B2 (ja) * 1995-01-30 2001-11-05 株式会社日立製作所 液晶表示装置の製造方法
US5894136A (en) * 1996-01-15 1999-04-13 Lg Electronics Inc. Liquid crystal display having a bottom gate TFT switch having a wider active semiconductor layer than a conductive layer on same
JPH09244055A (ja) * 1996-03-14 1997-09-19 Hitachi Ltd 液晶表示装置
KR100188110B1 (ko) * 1996-04-10 1999-06-01 김광호 액정 표시 장치
JP3883641B2 (ja) * 1997-03-27 2007-02-21 株式会社半導体エネルギー研究所 コンタクト構造およびアクティブマトリクス型表示装置
JP4028043B2 (ja) 1997-10-03 2007-12-26 コニカミノルタホールディングス株式会社 液晶光変調素子および液晶光変調素子の製造方法
JP3976915B2 (ja) * 1998-02-09 2007-09-19 シャープ株式会社 二次元画像検出器およびその製造方法
JP3161528B2 (ja) * 1998-09-07 2001-04-25 日本電気株式会社 液晶表示パネル
KR100333983B1 (ko) * 1999-05-13 2002-04-26 윤종용 광시야각 액정 표시 장치용 박막 트랜지스터 어레이 기판 및그의 제조 방법
JP2001042340A (ja) 1999-08-03 2001-02-16 Minolta Co Ltd 液晶表示素子の製造方法
JP2001100217A (ja) * 1999-09-29 2001-04-13 Nec Corp カラー液晶表示装置およびその製造方法
CN1163964C (zh) 1999-11-05 2004-08-25 三星电子株式会社 用于液晶显示器的薄膜晶体管阵列面板

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102566165A (zh) * 2010-12-20 2012-07-11 北京京东方光电科技有限公司 阵列基板及其制造方法和液晶显示器
US10014068B2 (en) 2011-10-07 2018-07-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
TWI663730B (zh) * 2011-10-07 2019-06-21 日商半導體能源研究所股份有限公司 半導體裝置
US10431318B2 (en) 2011-10-07 2019-10-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US10580508B2 (en) 2011-10-07 2020-03-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US11133078B2 (en) 2011-10-07 2021-09-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US11749365B2 (en) 2011-10-07 2023-09-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US12062405B2 (en) 2011-10-07 2024-08-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US12431207B2 (en) 2011-10-07 2025-09-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device

Also Published As

Publication number Publication date
JP3916349B2 (ja) 2007-05-16
US6690442B1 (en) 2004-02-10
KR20010007251A (ko) 2001-01-26
US6882377B2 (en) 2005-04-19
JP2001059971A (ja) 2001-03-06
KR100756901B1 (ko) 2007-09-07
US20040125318A1 (en) 2004-07-01

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