TWI242050B - ITO sputtering target - Google Patents

ITO sputtering target Download PDF

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Publication number
TWI242050B
TWI242050B TW091120105A TW91120105A TWI242050B TW I242050 B TWI242050 B TW I242050B TW 091120105 A TW091120105 A TW 091120105A TW 91120105 A TW91120105 A TW 91120105A TW I242050 B TWI242050 B TW I242050B
Authority
TW
Taiwan
Prior art keywords
sputtering target
ito
target
sputtering
oxide
Prior art date
Application number
TW091120105A
Other languages
Chinese (zh)
Inventor
Naoki Ono
Original Assignee
Mitsui Mining & Smelting Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsui Mining & Smelting Co filed Critical Mitsui Mining & Smelting Co
Application granted granted Critical
Publication of TWI242050B publication Critical patent/TWI242050B/en

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
    • C04B35/453—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zinc, tin, or bismuth oxides or solid solutions thereof with other oxides, e.g. zincates, stannates or bismuthates
    • C04B35/457—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zinc, tin, or bismuth oxides or solid solutions thereof with other oxides, e.g. zincates, stannates or bismuthates based on tin oxides or stannates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/086—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Structural Engineering (AREA)
  • Physical Vapour Deposition (AREA)
  • Compositions Of Oxide Ceramics (AREA)

Abstract

The present invention provides an ITO sputtering target comprising a target produced through a machine grinding step and made of an oxide (ITO) containing at least one of indium oxide and tin oxide and an ITO film having a film thickness of more than 1 mum that is formed on a sputter surface of the target. According to the present invention, a sputtering target capable of effectively reducing occurrence of initial arc and having high initial stability can be obtained. By conducting sputtering using this sputtering target, formation of thin films having high performance can be effectively carried out with enhanced productivity. Further, since finish grinding is omissible, the grinding step can be simplified and the cost can be decreased.

Description

1242050 六 1· ι. -½. 2· 3· 4· 5· 、〜-、八 w A r * r '-...-. ·“.' … ：* 種I TO濺射靶，係在經機械研磨製程所製得且由含有 氧化雜1及氧化錫之至少一種之氧化物（ΙΤ0)所構成之濺 射鞋*’其特徵為該濺射靶之濺射面上形成有超過1微米 及5微米以下膜厚之IT0被膜、該濺射面之表面粗糙度 Ra為1微米以上且該IT0靶至少在濺射面上被著形成之 I το被膜係依據濺射法被著形成者。 如申明專利範圍第1項之1 το濺射靶，其特徵為該I το被 膜膜厚為1.5微米以上。 ϊ ::::範”1至3項任一項之1το濺射靶，其特徵 馬孩，射面之表面粗糙度Ra為1· 5微米以上。 如申請專利範圍第至3項任一項之IT〇濺 為該濺射而夕主^ ⑺犯’吳符徵 辨面之表面粗糙度Ra為2微米以上。1242050 Six 1 · ι. -½. 2 · 3 · 4 · 5 · ～~, ww A r * r '-...-. · ".' ： ： * I TO sputtering targets Sputtering shoes made by a mechanical grinding process and composed of an oxide (ITO) containing at least one of oxide 1 and tin oxide * 'are characterized in that more than 1 micron is formed on the sputtering surface of the sputtering target And IT0 coatings with a film thickness of 5 microns or less, the surface roughness Ra of the sputtering surface of 1 μm or more, and the I το coatings formed on the sputtering surface at least on the sputtering surface are formed by sputtering. For example, the 1 το sputtering target of item 1 of the patent scope is characterized in that the thickness of the I το coating is 1.5 micrometers or more. Ϊ :::: Fan "1το sputtering target of any one of 1 to 3, which is characterized by Ma, the surface roughness Ra of the radiation surface is 1.5 micrometers or more. For example, if IT0 sputtering in any one of the scope of the patent application is for the sputtering, the surface roughness Ra of the discriminating surface is more than 2 micrometers.

TW091120105A 2001-09-18 2002-09-03 ITO sputtering target TWI242050B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001283657A JP2003089868A (en) 2001-09-18 2001-09-18 Ito sputtering target

Publications (1)

Publication Number Publication Date
TWI242050B true TWI242050B (en) 2005-10-21

Family

ID=19107111

Family Applications (1)

Application Number Title Priority Date Filing Date
TW091120105A TWI242050B (en) 2001-09-18 2002-09-03 ITO sputtering target

Country Status (5)

Country Link
JP (1) JP2003089868A (en)
KR (1) KR100495886B1 (en)
CN (1) CN1207432C (en)
SG (1) SG108871A1 (en)
TW (1) TWI242050B (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4846872B2 (en) 2009-03-03 2011-12-28 Ｊｘ日鉱日石金属株式会社 Sputtering target and manufacturing method thereof

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09324263A (en) * 1996-06-06 1997-12-16 Sumitomo Bakelite Co Ltd Sputtering target
DE19855726A1 (en) * 1998-12-03 2000-06-08 Leybold Systems Gmbh Sputtering cathode for coating substrates

Also Published As

Publication number Publication date
CN1207432C (en) 2005-06-22
KR20030024589A (en) 2003-03-26
KR100495886B1 (en) 2005-06-16
CN1408895A (en) 2003-04-09
JP2003089868A (en) 2003-03-28
SG108871A1 (en) 2005-02-28

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MM4A Annulment or lapse of patent due to non-payment of fees