TWI240957B - Manufacturing method for crystal film using laser and the crystal film - Google Patents
Manufacturing method for crystal film using laser and the crystal film Download PDFInfo
- Publication number
- TWI240957B TWI240957B TW092129598A TW92129598A TWI240957B TW I240957 B TWI240957 B TW I240957B TW 092129598 A TW092129598 A TW 092129598A TW 92129598 A TW92129598 A TW 92129598A TW I240957 B TWI240957 B TW I240957B
- Authority
- TW
- Taiwan
- Prior art keywords
- laser beam
- band
- crystal grains
- pulsed laser
- region
- Prior art date
Links
- 239000013078 crystal Substances 0.000 title claims abstract description 307
- 238000004519 manufacturing process Methods 0.000 title claims description 50
- 239000010409 thin film Substances 0.000 claims abstract description 28
- 239000000463 material Substances 0.000 claims abstract description 10
- 239000010408 film Substances 0.000 claims description 141
- 238000000034 method Methods 0.000 claims description 97
- 238000009826 distribution Methods 0.000 claims description 70
- 230000008569 process Effects 0.000 claims description 38
- 238000012545 processing Methods 0.000 claims description 28
- 229910052710 silicon Inorganic materials 0.000 claims description 18
- 239000010703 silicon Substances 0.000 claims description 18
- 239000000758 substrate Substances 0.000 claims description 17
- 230000008018 melting Effects 0.000 claims description 12
- 238000002844 melting Methods 0.000 claims description 12
- 239000002245 particle Substances 0.000 claims description 11
- 239000000155 melt Substances 0.000 claims description 2
- 230000001678 irradiating effect Effects 0.000 abstract description 8
- 229910021417 amorphous silicon Inorganic materials 0.000 description 38
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 14
- 238000010521 absorption reaction Methods 0.000 description 14
- 230000006911 nucleation Effects 0.000 description 11
- 238000010899 nucleation Methods 0.000 description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 11
- 238000012546 transfer Methods 0.000 description 11
- 230000007423 decrease Effects 0.000 description 8
- 238000010586 diagram Methods 0.000 description 8
- 238000011156 evaluation Methods 0.000 description 6
- 238000002347 injection Methods 0.000 description 6
- 239000007924 injection Substances 0.000 description 6
- 239000007788 liquid Substances 0.000 description 6
- 230000007246 mechanism Effects 0.000 description 6
- 230000003287 optical effect Effects 0.000 description 6
- 238000004088 simulation Methods 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 5
- 238000003384 imaging method Methods 0.000 description 5
- 238000012360 testing method Methods 0.000 description 5
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 238000002425 crystallisation Methods 0.000 description 4
- 230000008025 crystallization Effects 0.000 description 4
- 238000002474 experimental method Methods 0.000 description 4
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 239000010453 quartz Substances 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- 229910021419 crystalline silicon Inorganic materials 0.000 description 3
- 238000005224 laser annealing Methods 0.000 description 3
- 239000013081 microcrystal Substances 0.000 description 3
- 238000013459 approach Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000004364 calculation method Methods 0.000 description 2
- 239000002178 crystalline material Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 239000012071 phase Substances 0.000 description 2
- 239000004576 sand Substances 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000002431 foraging effect Effects 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 238000004452 microanalysis Methods 0.000 description 1
- 239000005304 optical glass Substances 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000010998 test method Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
- H01L21/02686—Pulsed laser beam
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02422—Non-crystalline insulating materials, e.g. glass, polymers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02441—Group 14 semiconducting materials
- H01L21/0245—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02488—Insulating materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
- H01L21/02678—Beam shaping, e.g. using a mask
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H01L21/02691—Scanning of a beam
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Optics & Photonics (AREA)
- Chemical & Material Sciences (AREA)
- High Energy & Nuclear Physics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Toxicology (AREA)
- Health & Medical Sciences (AREA)
- Electromagnetism (AREA)
- Materials Engineering (AREA)
- Recrystallisation Techniques (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002314735 | 2002-10-29 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200416835A TW200416835A (en) | 2004-09-01 |
| TWI240957B true TWI240957B (en) | 2005-10-01 |
Family
ID=32211623
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW092129598A TWI240957B (en) | 2002-10-29 | 2003-10-24 | Manufacturing method for crystal film using laser and the crystal film |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JP4211939B2 (ja) |
| KR (1) | KR100685141B1 (ja) |
| CN (2) | CN100378919C (ja) |
| TW (1) | TWI240957B (ja) |
| WO (1) | WO2004040628A1 (ja) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005045209A (ja) * | 2003-07-09 | 2005-02-17 | Mitsubishi Electric Corp | レーザアニール方法 |
| KR100713895B1 (ko) * | 2006-04-06 | 2007-05-04 | 비오이 하이디스 테크놀로지 주식회사 | 다결정막의 형성방법 |
| JP5133548B2 (ja) | 2006-09-29 | 2013-01-30 | 富士フイルム株式会社 | レーザアニール方法およびそれを用いたレーザアニール装置 |
| TWI590309B (zh) | 2011-09-01 | 2017-07-01 | 應用材料股份有限公司 | 結晶化的方法 |
| KR102657831B1 (ko) * | 2016-01-08 | 2024-04-16 | 더 트러스티이스 오브 콜롬비아 유니버시티 인 더 시티 오브 뉴욕 | 스폿 빔 결정화를 위한 방법 및 시스템 |
| DE102017109809B4 (de) | 2016-05-13 | 2024-01-18 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Verfahren zur Herstellung eines Halbleiterchips |
| DE102017109812A1 (de) | 2016-05-13 | 2017-11-16 | Osram Opto Semiconductors Gmbh | Licht emittierender Halbleiterchip und Verfahren zur Herstellung eines Licht emittierenden Halbleiterchips |
| DE102017108949B4 (de) | 2016-05-13 | 2021-08-26 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Halbleiterchip |
| WO2019075454A1 (en) * | 2017-10-13 | 2019-04-18 | The Trustees Of Columbia University In The City Of New York | SYSTEMS AND METHODS FOR BEAM POINT CRYSTALLIZATION AND LINEAR BEAM |
| JP2020181923A (ja) * | 2019-04-26 | 2020-11-05 | 株式会社日本製鋼所 | 半導体膜の製造方法 |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3301054B2 (ja) * | 1996-02-13 | 2002-07-15 | 株式会社半導体エネルギー研究所 | レーザー照射装置及びレーザー照射方法 |
| CA2256699C (en) * | 1996-05-28 | 2003-02-25 | The Trustees Of Columbia University In The City Of New York | Crystallization processing of semiconductor film regions on a substrate, and devices made therewith |
| WO1999006494A1 (fr) * | 1997-07-30 | 1999-02-11 | Mitsubishi Pencil Kabushiki Kaisha | Encre aqueuse pseudoplastique pour stylos a bille |
| KR100269312B1 (ko) * | 1997-10-14 | 2000-10-16 | 윤종용 | 실리콘막의결정화방법및이를이용한박막트랜지스터-액정표시장치(tft-lcd)의제조방법 |
| JP4454720B2 (ja) * | 1998-07-13 | 2010-04-21 | 株式会社半導体エネルギー研究所 | 光学レンズ、ビームホモジェナイザー、レーザー照射装置、及びレーザー照射方法 |
| KR100415004B1 (ko) * | 1999-03-05 | 2004-01-13 | 미쓰비시덴키 가부시키가이샤 | 박막 반도체 장치의 제조 방법 |
| TW445545B (en) * | 1999-03-10 | 2001-07-11 | Mitsubishi Electric Corp | Laser heat treatment method, laser heat treatment apparatus and semiconductor device |
| US6368945B1 (en) * | 2000-03-16 | 2002-04-09 | The Trustees Of Columbia University In The City Of New York | Method and system for providing a continuous motion sequential lateral solidification |
| JP3352995B2 (ja) * | 2000-04-14 | 2002-12-03 | 住友重機械工業株式会社 | 結晶成長評価方法及び装置 |
-
2003
- 2003-10-14 CN CNB2003801024215A patent/CN100378919C/zh not_active Expired - Fee Related
- 2003-10-14 KR KR1020057007439A patent/KR100685141B1/ko not_active IP Right Cessation
- 2003-10-14 CN CNB2007101423450A patent/CN100514561C/zh not_active Expired - Fee Related
- 2003-10-14 JP JP2004548019A patent/JP4211939B2/ja not_active Expired - Fee Related
- 2003-10-14 WO PCT/JP2003/013141 patent/WO2004040628A1/ja active Application Filing
- 2003-10-24 TW TW092129598A patent/TWI240957B/zh not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| WO2004040628A1 (ja) | 2004-05-13 |
| TW200416835A (en) | 2004-09-01 |
| JP4211939B2 (ja) | 2009-01-21 |
| CN101145518A (zh) | 2008-03-19 |
| KR100685141B1 (ko) | 2007-02-22 |
| CN100378919C (zh) | 2008-04-02 |
| CN1708831A (zh) | 2005-12-14 |
| CN100514561C (zh) | 2009-07-15 |
| JPWO2004040628A1 (ja) | 2006-03-02 |
| KR20050059322A (ko) | 2005-06-17 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US7470602B2 (en) | Crystalline film and its manufacture method using laser | |
| US8598588B2 (en) | Systems and methods for processing a film, and thin films | |
| US6169014B1 (en) | Laser crystallization of thin films | |
| JP3204986B2 (ja) | 基板上の半導体膜領域の結晶化処理及びこの方法により製造されたデバイス | |
| US4330363A (en) | Thermal gradient control for enhanced laser induced crystallization of predefined semiconductor areas | |
| KR100740124B1 (ko) | 다결정 실리콘 박막 트랜지스터 및 그 제조방법 | |
| KR100507553B1 (ko) | 결정성 반도체막, 그의 제조방법, 반도체장치 및 그의제조방법 | |
| KR101212378B1 (ko) | 결정 방위 제어형 폴리실리콘막을 생성하기 위한 장치 및 방법 | |
| TWI240957B (en) | Manufacturing method for crystal film using laser and the crystal film | |
| JP3859978B2 (ja) | 基板上の半導体材料膜に横方向に延在する結晶領域を形成する装置 | |
| JP5084185B2 (ja) | 半導体薄膜の製造方法 | |
| US20040087116A1 (en) | Semiconductor devices and methods of manufacture thereof | |
| KR100652082B1 (ko) | 반도체 디바이스, 그 제조 방법 및 제조 장치 | |
| JP2004207691A (ja) | 半導体薄膜の製造方法、その製造方法により得られる半導体薄膜、その半導体薄膜を用いる半導体素子および半導体薄膜の製造装置 | |
| US7179725B2 (en) | Method of fabricating a polycrystalline film by crystallizing an amorphous film with laser light | |
| KR100611040B1 (ko) | 레이저 열처리 장치 | |
| JP4034165B2 (ja) | レーザを用いた多結晶膜の製造方法 | |
| US20040084679A1 (en) | Semiconductor devices and methods of manufacture thereof | |
| JP2017017292A (ja) | 結晶化方法、パターニング方法、および、薄膜トランジスタ作製方法 | |
| KR102612443B1 (ko) | 레이저 열처리 장치 및 그를 이용한 박막 결정화 방법 | |
| JP2005123475A (ja) | 半導体薄膜とその製造方法およびその薄膜を用いた薄膜トランジスタ | |
| JP3201381B2 (ja) | 半導体薄膜の製造方法 | |
| JP6687497B2 (ja) | 結晶半導体膜製造方法、結晶半導体膜製造装置および結晶半導体膜製造装置の制御方法 | |
| JP4467276B2 (ja) | 半導体薄膜を製造する方法と装置 | |
| JP2008311494A (ja) | 結晶性半導体膜の製造方法、及び、レーザー装置 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |