TWI220277B - Gas distribution plate electrode for a plasma reactor - Google Patents

Abstract

The invention is embodied in a plasma reactor for processing a semiconductor wafer, the reactor having a gas distribution plate including a front plate in the chamber and a back plate on an external side of the front plate, the gas distribution plate comprising a gas manifold adjacent the back plate, the back and front plates bonded together and forming an assembly. The assembly includes an array of holes through the front plate and communicating with the chamber, at least one gas flow-controlling orifice through the back plate and communicating between the manifold and at least one of the holes, the orifice having a diameter that determines gas flow rate to the at least one hole. In addition, an array of pucks is at least generally congruent with the array of holes and disposed within respective ones of the holes to define annular gas passages for gas flow through the front plate into the chamber, each of the annular gas passages being non-aligned with the orifice.

Description

1220277 发明, Description of the invention: IB ·! ·

Ill [Technical field to which the invention belongs] The present invention relates to a plasma reactor for processing semiconductor wafers. More specifically, the present invention relates to a gas diffuser plate that does not easily generate plasma arc light in a gas injection channel, does not have a high gas injection speed, and has a uniformity and speed of gas diffusion that are not affected by the expansion of the gas injection channel Plasma reactor.

[Prior art]

In the field of semiconductor microelectronic circuit manufacturing, various plasma reactors need a large RF electrode at the top of the chamber. The top of the chamber is above a semiconductor workpiece. The workpiece is generally a semiconductor substrate, and the substrate is supported on a conductive platform. on. The RF power is applied to the support base, and the top or top electrode is the reverse electrode of the base. In some reactors, the RF power supplied to the support base is a plasma source (which determines the plasma ion density) and also a plasma bias power (which determines the ion energy on the wafer surface). In other reactors, a radio frequency power supplier provides plasma source power, rather than wafer base, and the RF power supplied to the wafer base is only used as the RF bias power. For example, the plasma source power can be provided by an inductive antenna or by the top electrode. Therefore, the top electrode can be a grounded reverse electrode, or can be connected to an independent RF power generator, where the former is used to provide RF power to the wafer support pedestal, and the latter is used as an independent RF power supplier. In either case, the most uniform distribution of the process gas can be achieved by feeding the process gas from the top. At this time, the top electrode needs to be a gas diffuser. 3 In the plasma reactor, the distribution of the processing gas on the wafer surface is uniform. I * the demand is increasing, especially the plasma reaction used in semiconductor etching and other semiconductor processes.1, because microelectronic circuits are small and the smallest Due to the continuing demand for L *, the trend has shifted to 0.15 micron technology. In most cases, the design of these small component structures is guided by the microprocessor's clock speed, and they require relative progress in etching rate, uniform etching on the wafer surface, and ... In the prior art, for relatively large feature size components, a single gas inlet for the top electrode (gas diffuser plate) above a plasma reactor must provide suitable uniformity of process gas distribution, where the single inlet must be Larger sizes to meet the necessary airflow requirements. The large entrance is more likely to have the disadvantage that the plasma enters the entrance and causes arcing (areing) or the ignition of the plasma in the entrance. It is one of the major disadvantages of the large entrance equipment, in which the arc will destroy the board, enlarge the size of the entrance, and / or eliminate粍 Power. In addition, the entrance plate can also pollute the electric ray because it generates by-products of splashing ore. For a large hole entrance, the maximum electric field occurs near the center of the hole ^ This is where plasma ignition or arcing is most likely to occur. To solve the problem of a single milk inlet reactor, a dish or a disk-shaped floppy disk is juxtaposed in the center of the hole as one of the solutions. Patent US 6,8 85,3 5 8). However, for the current head &, and components with very small feature structures, better gas uniformity on the wafer surface is required, so a single gas distribution inlet or the top gas dispersion team The holes in the bidding plate are no longer suitable for the required uniformity of gas dispersion. Therefore, the spot & ^ β said that the gas diffuser used is to drill thousands of fine holes or holes, by which the stem ☆ w μ is searched for fine holes 4 1220277 liters on the surface of the wafer uniformity of gas distribution Zhong 0 However, in order to reduce the arcing phenomenon of the plasma and minimize the diameter of the entrance hole, the hole and the hole must be to a certain extent in order to reduce the arcing phenomenon of the plasma and to minimize the plasma arc phenomenon. Such a large number of holes need to have a high depth-to-width ratio, must be drilled, and must not have extremely irregular hole edges. The quasi-size refers to the properties of the plasma ion density distribution on the surface of the hole. The initial height wafer surface plate ultimately fails to provide the required uniformity. To get a larger etch rate, reducing plasma is another problem. The small gas flow is so collimated that the holes and spaces between the wafers and the plates are spaced unevenly in the remaining velocity on the surface of the wafer. Therefore, it is better to be used as an electrode or a necessary solution. When plasma arc is generated, no high gas injection and the speed is not the expansion of the gas injection channel, and it can prevent the plasma from entering the high-intensity electric field in the center of the hole, the method of the center of the floppy disk has not been practical. Because of ensuring the uniform distribution of the gas, drilling with a small tolerance for the dimensional difference between the gases is indeed costly, because it should be used in extremely hard materials (such as carbonization). Furthermore, the holes referred to above need to be enlarged by plasma sputtering. Because the top is the same, the rate of expansion of some holes is smaller than that of a gas diffuser with a uniform gas distribution. The gap between the wafer and the top is denser, and the mouth of the hole is denser. A south-south velocity airflow is generated. And valleys, and make sure that the gas diffusion plate of the reverse electrode of the wafer does not have a plate that is easy to enter into the gas injection channel and has a large uniformity of the gas diffusion β. [Summary of the Invention] 5 1220277 The reaction is a backplane, above it. The gas piece is located on the back plate body including a hole plate, and the diameter of the manifold is a diameter, and the opposite side of the circular disk gas of a floppy disk hole is the same as [the embodiment see 100, for- The degree of vacuum is reversed to the defined range; the workpiece is 130, and the top is 110, and the 12 is a frequency generator. The top content is a plasma reactor built to process semiconductor wafers, which has a gas diffuser. The diffuser plate includes a front plate and a middle front plate located in the processing chamber, and the back plate is located outside the front plate. The diffuser plate also includes at least one gas manifold assembly. The back plate and the front plate are adjacent to each other in the manifold group. Joined into a component body. The module array and at least one airflow control hole are arranged in the front and communicate with the processing chamber; the control hole is drilled in the back plate and communicated between the module and at least one of the holes. The flow rate of the control hole to at least one hole is determined by the diameter. This array is at least roughly suitable for the array of holes, and is located in the middle to form a circular gas channel of the air flow, wherein the channel passes from the front plate to the processing chamber, and the control holes of the circular gas channel are misaligned Bit. Figure 1. In the figure, the plasma reactor includes a vacuum processing chamber, the cylindrical side wall of the reactor processing chamber 105, the top 110, and the bottom 1 ^ 5. A vacuum pump 120 is used to maintain a fixed wafer support pedestal 125 in the processing chamber to support a semiconductor wafer or is arranged at the bottom of the processing chamber 100 to make the wafer 130 side; the wafer The support base 125 has conductive parts for making the base be an electrode or a radio frequency power supplier. To achieve this, a shot 135 is connected to the pedestal 110 via a radio frequency impedance matching circuit 140, which is conductive in the embodiment shown, and is connected to the radio frequency return end of the radio frequency generator 6 1220277 generator 1 3 5 for The top 110 is used as a counter electrode of a wafer stage 125. In some types of reactors, another RF generator 145 may be connected to the top 110 via an RF matching circuit 150, so that the top 110 can also be used as another RF power supplier. At this time, the frequencies of the two RF generators 135, 145 are extremely different, so the two 135, 145 are independent operators.

The processing gas is introduced therein to provide a gas distribution with maximum uniformity on the upper surface of the wafer 130, which is provided by injecting gas into a plurality of uniformly spaced gas injection inlets 16 in the top 110; therefore, the top 110 is a Gas diffuser. A gas source or supply 165 is coupled to one of the gas manifolds 170 in the top gas diffuser 110, and the gas manifold 170 sends gas to each of the inlets 160. As shown in Figures 2A and 2B, the inlet 160 of the gas diffuser plate 1 10 is composed of two parallel flat plates, namely a back plate 205 and a front plate 210; the two 205, 210 are made independently (Figure 2A) , And then joined the complex (Figure 2B). The back plate 205 is located above and the front plate 210 is located on the bottom and faces the plasma inside the processing chamber. The bottom surface of the back plate 2 05 is composed of a relatively large array of cylindrical openings 2 1 5, and the front plate 2 10 is composed of a cylindrical floppy disk array 220, wherein the cylindrical floppy disk array 220 matches the opening array 215. As shown in FIG. 2B, the floppy disk 220 of the front plate 210 is connected to the opening 2 1 5 of the back plate 205, and a circular gap is formed between each opening 2 15 and the matching floppy disk 220, wherein the circular gap is It is the gas inlet 160. The size of the gas supply hole 230 in the back plate 205 is designed to enable the correct required airflow from the gas manifold assembly 170 (located above the back plate 20 5) to the annular inlet 160. Since the gas diffuser plate 11 is composed of a hundred or 7 1220277 thousands of circular ring-shaped inlets 160 arrays, so that the gas distribution on the entire wafer surface is spatially uniform, the inlets 160 can pass through The airflow is excessive in most cases; therefore, the tightly set holes 230 can provide the required airflow control. Obviously, each hole 230 faces a horizontal gap 23 5 between the corresponding floppy disk 220 and the back plate 205, so the gas must be forced to make a large turn into the gap 23 5 and then enter the circular inlet 160 after a large turn. . In order to prevent these turns from disappearing due to collision with the surface of the gas diffuser plate in the circular inlet 160 and the horizontal gap 23 5, the plasma in the surface treatment chamber of the gas diffuser plate should go up to the circular inlet 1 60 In China, this action is difficult to achieve, if not impossible. One of the consequences is that the precisely sized hole 230 is protected from plasma sputtering, so only the circular ring-shaped entrance 160 is distorted by plasma sputtering or attack. However, the area of each circular annular inlet 160 is large enough that plasma sputtering only causes a small area difference between the inlet and the inlet, and the uniformity of gas distribution on the wafer surface is hardly affected by such changes. Furthermore, in the embodiments of FIGS. 2A and 2B, the uniformity of the airflow is determined only by the uniformity of the holes 230, and the change in the size of each circular ring inlet has little effect on the uniformity of the airflow. Therefore, the performance of the gas diffusion plate 110 is not substantially changed by plasma sputtering or attack, which is a great advantage. In one embodiment, the back plate 205 and the front plate 210 are formed of silicon carbide, and are combined with the existing technology of silicon carbide manufacturing. The advantage of using silicon carbide as the gas diffuser plate 1 10 is that this material is not actually penetrated by certain processing gases and plasma substances, among which the plasma substance can be a halogen-containing processing gas and plasma substance. In addition, silicon carbide is relatively suitable for use in silicon half-body and 9-round processing. Therefore, the plasma sputtering contamination of this material is not as harmful as its dagger and other materials. Another advantage of the circular gas inlet 160 is that each floppy disk 220 can keep the electric poly ions and gas outside the center of each opening 2 15, and the middle and outer openings 2 15 are the strongest electric fields; this characteristic is Avoid arcing or plasma ignition phenomenon. The two-plate structure of the gas diffuser 110, 205, 21, enables hundreds or thousands of openings 2 15 and the center of the floppy disk 22 to have low manufacturing costs. Therefore, the present invention can provide a low-cost gas diffuser plate with sufficient airflow distribution uniformity, and can process components with very small characteristic structures (such as 0 micron; located on a large wafer (10 inches to 20 inches in diameter)), the smallest The plasma arc phenomenon can be avoided, and it can avoid the long-term damage of plasma sputtering. Another advantage is that the relatively large circular opening i6o provides a lower gas injection rate. Although each minute hole 23 generates a very high velocity gas and enters it into the corresponding horizontal gap 2 3 5, the flow in the horizontal gap 2 3 5 and the large circular ring inlet 16 0 makes it Slow down. Therefore, the uniformity of the airflow from the bottom of the front plate 210 is much better, and it can avoid high-speed narrow airflow and feather plasma. In short, when the gas diffuser 0 is used, the gap between the small wafer and the top will not cause uneven gas distribution at the wafer surface, which is a significant advantage. Many of the above advantages are adequate to solve the problems encountered in high-power plasma reactors that produce high plasma ion density. In order to limit the range of plasma, the high plasma ion density on the wafer surface is determined by the small gap at the top of the wafer. It is obtained in some reactors, which is one of these problems. As described above, the gas diffuser plate i i 〇 can achieve a uniform gas distribution in this small gap, which is due to the large circular annular inlet 9 1220277 160. The other of these problems is the arcing phenomenon in the gas inlet when the high plasma ion density is provided by the plasma source power to the top or above gas diffuser plate and formed in the reactor. As mentioned above, the gas loose money contains a floppy disk 220 for confining the gas to the area closer to each opening 215; this is where the electric field is minimized to suppress or avoid arcing. Therefore, the gas diffusion plate 110 itself is suitable for use in a high-density plasma reactor. Figures 3A, 3B and 4 show one embodiment of the example of Figures 2A and 2B. Fig. 3A shows that the front plate 21o has a floppy disk array 22o, the floppy disk array 220 and the longitudinal arms 3 10 and the lateral arms 3 15 form a net structure, and the arms 310,315 constitute a fixed array. Please refer to FIG. 3B and FIG. 4 'The back plate 205 has a longitudinal channel 320 and a transverse channel 325 for receiving the longitudinal and transverse arms 31, 315 when the plates 205, 210 are connected to the composite. The floppy disk 220 is located in the center of its corresponding hole 2 1 5 and is separated from the back plate 205 by the horizontal gap 2 3 5 and the circular ring-shaped entrance 160 and therefore does not contact the back plate 205. The contact between the back plate 205 and the front plate 210 exists in the direction of the longitudinal and transverse arms 310,315, wherein the longitudinal and transverse arms 3 1 0, 3 1 5 are closely attached to the corresponding longitudinal and transverse channels 320, 325; these contact surfaces are the two plates 205,2 10 Where the complex is connected. As mentioned earlier, if the two plates are made of silicon carbide, then the joining is done using standard carbide cementing technology. The embodiment shown in FIG. 5 is a single hole 2 3 5 a for a group of gas supply near a circular gas inlet 160a, 160b, 160c, wherein a single hole 235a is directly sent to the middle circular gas through the horizontal gap 235b. The inlet 160b is sent to the adjacent circular inlets 160a, 160c, 10 through the internal passages 505, 510. The internal channels 505, 510 connect the adjacent circular inlets 160a, 160c and the intermediate circular inlet 160b. A great advantage of this embodiment is that the number of fine holes 235 to be drilled in the back plate 205 can be greatly reduced. In the embodiment shown in FIG. 6, a back plate 600 has parallel transverse grooves 605, and a front plate 610 has an array of holes 615 and floppy disks 620. The circular holes 615 and cylindrical floppy disks 620 are arranged concentrically, thus forming a corresponding ring. The shaped gas port 6 1 6, the grooves 6 0 5 are aligned with the opposite rows of the holes 6 1 5 and the floppy disk 6 2 0. The width of each slot 605 is smaller than the diameter of each hole 615 (if it can be less than half of the latter). The plates 600, 610 are connected to the complex, and each slot 605 is located at the center of the column array 615. Referring to FIG. 7, the gas passage opposite to each hole 6 15 is composed of a pair of arched grooves 630a, 630b, and the grooves 630a, 630b are indicated by solid lines in FIG. 7. The process gas is fed into each tank 605 through a single fine hole 635 through the back plate 600, where the diameter of the hole 635 is selected to provide the necessary airflow rate. The embodiments of FIGS. 6 and 7 are easier to make, because there is no horizontal gap between the floppy disk 620 and the back plate 600 (such as the horizontal gap 235 in FIG. 2), but a joint is formed between the plates 600, 610, that is, between them. Join over the entire joining surface. The floppy disk 620 is bonded to the bottom surface of the board 600 in a similar manner over its entire upper surface. The only area on the upper surface of the floppy disk 620 that is not joined in this manner is the area facing the narrow slot 605. In the above embodiment, the floppy disk 620 is used as an airflow turning element for changing the air flow between the front and rear plates 6 1 0,600, that is, the air flow model in the back plate 600 is transformed into a circular air flow model in the front plate 6 1 0 . The airflow model corresponds to a first radius (the radius of the upper hole 63 5), and the circular ring model corresponds to a 1220277 second radius (that is, the radius of each circular ring opening 660), where the second radius is greater than the first radius . The airflow turning element 620 generates a rapid airflow change (a) that is, a vertical airflow from the airflow model in each hole 6 3 5 is changed to a horizontal airflow 'and the airflow is changed from the first radius (the radius of the hole 635) to the first The two radii (the radius relative to the ring-shaped opening 660) then (c) are transformed into a vertical airflow of 6 6 0 for each corresponding ring-shaped opening.

Figures 8A-8D illustrate a method for manufacturing the monolithic silicon carbide body from the gas diffuser plates of Figures 6 and 7. In FIG. 8A, the back plate 600 is made of sintered silicon carbide, and the groove 605 is milled in the plate 600. In FIG. 8B, the graphite insert 805 is placed in the groove 605. In FIG. 8C, the front plate 6 10 is made of silicon carbide by chemical vapor deposition on the lower surface 600a of the back plate 600; then, after the graphite material is burned, each graphite is inserted The parts are removed by heating the entire assembly, and finally an empty slot 605 is formed, as shown in FIG. 8D. In FIG. 8D, the circular opening array 660 is milled in the thickness direction of the entire front plate 610, which corresponds to the hole 615 and the floppy disk 620 in FIG. In addition, the hole 63 5 is also shown in Fig. 8D, which may be milled during any of the previous steps. Figures 9A-9D illustrate another method for manufacturing the monolithic silicon carbide body of the gas diffuser of Figures 6 and 7. In Fig. 9A, the backing plate 600 is made of sintered carbide, and the groove 605 is milled in the plate 600. In addition, a wide shallow channel 810 is formed in the back plate 600, which is located at the center of each slot 605 and parallel to it. In Fig. 8B, the carbide insert 815 is placed in the wide and shallow through hole 810. In FIG. 8C, the front plate 61 is chemically vapor-deposited with silicon carbide on the lower surface 600a of the back plate 600. In FIG. 8D, the 12 1220277 circular opening array is milled in the thickness direction of the entire front plate 6 and 0 and the silicon carbide insert 8 1 5, which corresponds to the hole 615 and the floppy disk 620 in FIG. 6. FIG. 10 illustrates another embodiment. At this time, the back plate 600 and the front plate 610 are both made of anodized inscriptions, and an anodizing process is performed on the back plate 600 to obtain an alumina film 600-1, which is obtained from the front plate. Alumina film 610-1 was prepared on 61 °, and this anodized layer was used to protect the plate from plasma damage. The present invention has been described by the above embodiments, in which the top gas diffusion plate must be used as an electrode (and therefore at least contain a conductive material), but the gas diffusion plate of the present invention is also suitable for applications where the gas diffusion plate is not used as an electrode. In the embodiments where the top gas diffuser plate is used as an upper electrode, it may be made of carbonized carbide, as described above. But when it is desired that the impedance of the gas diffusion plate is smaller than that of silicon carbide (0.005-0.5.00hm-cm), the manufacture of each silicon carbide plate 600,610 enables a thin highly conductive graphite layer 91,920 The principle is to lay on the center of the board and co-planar with the corresponding board, as shown in the figure. This is achieved by treating each plate 600,610 as a graphite plate, and processing each graphite plate to form the structural features described in Figs. 6 and 7. Then each of the graphite plates 600, 610 is siliconized in a conventional manner.

600,610 beyond the limited depth of the outer surface of graphite so that the graphite contents are not silicified ', that is, the graphite layer 91,92, surrounded by silicon carbide plate 600,6 10. The graphite layers 910,920 have a resistance that is about one step lower than that of silicon carbide. Because of the stone, the plasma layer can be prevented from being broken. The ink layer 91 0,920 is completely sealed by silicon carbide.

Although the gas diffuser in Figure 2A and 2B ® has been described as made of carbon 13 1220277 siliconized silicon, it can actually be made of silicon. The preferred embodiment of the present invention has been described in detail above, and its various variants are obvious and inferred from the above. These variants do not depart from the true spirit of the present invention. The device for surface flow disintegration and simpleness of the device mM Anti-reverse pulp ^ B ^ a 1 The picture is clearly 1 The first book is a simplified diagram A A 1 2

The third picture of B burst 0 Γ is a partial cross-sectional side view 侗 of the plate flow dispersive gas-gathering device. Figure 3A is a plan view of an embodiment of the front plate of the gas flow plate shown in FIG. 2B. FIG. 3B is a plan view of the front plate facing the back plate in this embodiment. Fig. 4 is a sectional side view of the component taken from line 4-4 of Fig. 3B. Fig. 5 is a sectional side view of the second embodiment of the plasma reactor gas diffuser plate of Fig. 1 & Fig. 6 is a partial explosion of the third embodiment of the plasma reactor gas diffuser plate of Fig. 1 Perspective view. Figure 7 is a sectional view taken along line 7-7 of Figure 6. Figures 8A, 8B, 8C, and 8D are side views of a continuous portion of a portion of the gas diffuser plate of Figure 6, which illustrates the first method of manufacturing the gas diffuser plate of Figure 6. Figures 9A, 9B, 9C, and 9D are side views of 14 1220277 continuous portions of the gas diffuser plate of Figure 6. Fig. 10 is a sectional side view of the third embodiment of the plasma reaction gas gas diffusion plate of Fig. 1. FIG. 11 is a cross-sectional side view of the different gas diffusion plates of FIG. 10. [Simple description of component representative symbols] 100 Vacuum processing chamber 105 Cylindrical sidewall 110 Top 115 Bottom 120 Vacuum pump 125 Wafer support base 130 Wafer (workpiece) 135 RF generator 140 RF impedance matching circuit 145 RF generator 150 RF Impedance matching circuit 160 inlet 160a inlet 160b inlet 160c inlet 165 gas supply 170 gas manifold 205 back plate 210 front plate 215 opening 220 floppy disk 230 gas supply hole 235 horizontal gap 23 5a? L 23 5b horizontal gap 310 longitudinal arm 315 transverse arm 320 longitudinal channel 325 transverse channel 600 back plate 600a lower surface 600-1 alumina film 605 transverse groove 610 front plate 615 hole 616 circular ring gas port 15 1220277 620 floppy disk 630a arched groove 63 0b arched groove 635? L 660 round Circular opening 805 Graphite insert 810 Channel 815 Silicon carbide insert 910 Graphite layer 920 Graphite layer 16

Claims (1)

1220277 _ — Wai 1. A plasma reactor for processing a semiconductor wafer, the reactor includes at least: a side wall of a vacuum processing chamber; a wafer support stand for supporting the semicircle in the processing chamber; a radio frequency A power source is coupled to the wafer support base; a processing gas source; and a gas diffusion plate located at the top of one of the processing chambers, the flow plate includes at least: a front plate located in the processing chamber; The back plate is located on one of the outer sides. The gas diffuser plate contains at least one gas. The gas manifold is adjacent to the back plate, the back plate and the front plate body, and forms a component. The component includes at least: (a) — An array of holes is arranged in the front plate and communicates with the chamber; (b) at least one air flow control hole, the phase hole passing through the back plate has a diameter between the manifold and at least one of the holes, and the diameter is used for To determine the airflow rate of one less hole; and (c) a floppy disk array, at least approximately in the hole array and located in the opposite of the holes, for a general-purpose channel for the airflow from the front plate to the processing chamber, the Of a circular gas channel The conductor crystal gas diffuses the front plate manifold, connects to it, and can communicate with it; the lead to coincides with, defines the ring defined by each 17 1220277 is not aligned with the hole. 2. The reactor according to item 1 of the scope of patent application, wherein the component further comprises an array of airflow control holes, which penetrates through the back plate and communicates with the manifold and the opposite holes of the hole array. 3. The reactor as described in item 2 of the scope of the patent application, wherein each of the holes faces a corresponding one of the floppy disk, and the assembly further includes a planar gap that is between each of the floppy disks. One of the back plates faces the surface, and each plane gap allows the corresponding hole and the corresponding annular gas passage to communicate with each other. 4. The reactor according to item 1 of the patent application scope, wherein the component further comprises: a gas flow control hole penetrating the back plate for each predetermined adjacent hole group, the hole substantially facing the corresponding adjacent hole group The central one of the caves; and an internal gas channel connecting the central one of the caves to the other caves of the adjacent cave group. 5. The reactor according to item 3 of the scope of patent application, wherein the back plate contains at least the array of holes, and the front plate contains at least the floppy disk array. 6. The reactor according to item 5 of the scope of patent application, wherein the front plate and the 18 1220277 back plate contain at least silicon carbide. 7. The reactor according to item 6 of the scope of patent application, wherein at least one of the plates further comprises a closed plane graphite layer extending parallel to a plane of the plate. 8. The reactor according to item 5 of the scope of patent application, wherein the front plate and the back plate include at least anodized aluminum. 9. The reactor according to item 5 of the scope of patent application, wherein the gas diffusion plate includes at least one top electrode of the reactor, the reactor further includes a second radio frequency power source, and the second radio frequency power source is coupled to The gas diffuser. 10 The reactor according to item 5 of the scope of patent application, wherein the gas diffusion plate includes at least a reverse electrode opposite to the wafer support base, and the radio frequency power supply is provided on the wafer support base and The gas diffuser is connected. 1 1. The reactor according to item 1 of the scope of patent application, wherein the hole array is arranged in a parallel hole row, and the assembly further comprises: a plurality of long grooves, which are located in the back plate and located in the corresponding hole row. And are open at the ends of the holes, each of the slots enables communication between the hole and the hole in the corresponding hole row. 19 1220277 1 2. The reactor described in item 11 of the scope of patent application, wherein the assembly further includes a plurality of airflow control holes, the airflow control holes corresponding to the plurality of hole rows, and each of the grooves makes the The corresponding one of the holes is communicated with the corresponding hole column. 13. The reactor according to item 11 of the scope of patent application, wherein the hole is not aligned with the circular gap between the floppy disk and the holes. 14. The reactor according to item 11 of the scope of patent application, wherein each of the elongated grooves has a width that is smaller than the diameter of each of the holes, and each of the floppy disks A person touches one of the front plates facing the surface. 15 · The reactor as described in item 8 of the scope of the patent application, wherein each of the hole-ring-shaped gas · channel is divided into a pair of partially arched ring-shaped portions. 16. The reactor according to item 15 of the scope of the patent application, wherein the arched part of the part corresponds to a circular gap and a corresponding groove, wherein the circular gap is in the corresponding hole. Each floppy disk. 17. The reactor according to item 11 of the scope of patent application, wherein the holes and floppy disks are formed in the front plate, and the grooves and holes are formed in the back plate. 1 8 · The reactor described in item 17 of the scope of patent application, wherein the front plate and the 20 1220277 back plate contain at least silicon carbide β 19. The reactor described in item 18 of the scope of patent application, wherein the plates At least one of them further comprises a closed graphite layer, and the graphite layer is parallel to a plane of the plate. 20. The reactor according to item 17 of the scope of patent application, wherein the front plate and the back plate include at least anodized aluminum. 21. The reactor according to item 17 of the scope of patent application, wherein the gas diffusion plate includes at least a top electrode of the reactor, the reactor further comprises a second radio frequency power source, and the second radio frequency power source is coupled to The gas diffuser. 22. The reactor according to item 17 of the scope of the patent application, wherein the gas diffusion plate includes at least a reverse electrode opposite to the wafer support base, and the radio frequency power source is located on the wafer support base and the Connected on the gas diffuser. 23. A gas diffusion plate installed at the top of one of the plasma reactors for processing a semiconductor wafer and having a vacuum processing chamber side wall for supporting the semiconductor wafer in the processing chamber A wafer support base, an RF power source coupled to the wafer support base, and a processing gas source: the gas diffuser plate includes at least: 21 1220277 a front plate located in the processing chamber; a The back plate is located on the outer side of one of the front plates. The gas diffuser plate includes at least a gas manifold. The gas manifold is adjacent to the back plate. The back plate and the front plate are connected to a composite body and constitute a component. The assembly includes at least: (a) an array of holes that pass through the front plate and communicate with the processing chamber; (b) at least one airflow control hole that penetrates the back plate and can be located in the manifold and the holes At least one is in communication; the hole has a diameter that determines the airflow rate to at least one hole; and (c) a floppy disk array that at least roughly matches the hole array and is located opposite the holes , Used to define from the front plate to the processing chamber The gas flow is generally a circular ring channel, and each of these circular ring gas channels is not aligned with the hole. 24. The reactor according to item 23 of the scope of patent application, wherein the component further comprises an array of airflow control holes, which penetrates through the back plate and communicates with the manifold and the opposite holes of the array of holes. 25. The reactor as described in item 24 of the scope of patent application, wherein each of the holes faces a corresponding one of the floppy disk, and the assembly further includes a planar gap that is between each of the floppy disks. Between one of the back plates and the facing surface, each plane gap allows the corresponding hole to communicate with the corresponding annular gas channel. 2 6. The reactor according to item 23 of the scope of patent application, wherein the component further comprises: a gas flow control hole penetrating the back plate for each predetermined adjacent hole group, the hole substantially facing the corresponding adjacent hole The central one of the caves of the group; and an internal gas channel connecting the central one of the holes to the other holes of the adjacent cave group. 2 7. The reactor according to item 25 of the patent application scope, wherein the back plate contains at least the array of holes, and the front plate contains at least the floppy disk array. 2 8. The reactor according to item 27 of the scope of patent application, wherein the front plate and the back plate contain at least silicon carbide. 29. The reactor according to item 28 of the scope of patent application, wherein at least one of the plates further comprises a closed planar graphite layer, the graphite layer extending parallel to a plane of the plate. 30. The reactor according to item 27 of the scope of patent application, wherein the front plate and the back plate include at least anodized aluminum. 3 1. The reactor as described in item 23 of the scope of patent application, wherein the hole array 23 1220277 is arranged in a parallel hole row, and the assembly further includes: a plurality of long slots located in the back plate and located in the corresponding hole The holes in the rows are open at the ends of the holes, and each of the grooves enables communication between the hole and the holes in the corresponding hole row. 3 2. The reactor as described in item 31 of the scope of patent application, wherein the component further includes a plurality of airflow control holes, and the airflow control holes correspond to the plurality of hole rows, and each of the grooves makes the The corresponding one of the holes communicates with the corresponding hole column. 3 3 · The reactor according to item 31 of the scope of patent application, wherein the hole is not aligned with the circular gap between the floppy disk and the holes. 34. The reactor according to item 31 of the scope of patent application, wherein each of the elongated grooves has a width that is smaller than the diameter of each of the holes, and each of the floppy disks Touch one of the front plates facing the surface. 35. The reactor according to item 34 of the scope of the patent application, wherein each of the annular gas passages is divided into a pair of partially arched annular portions. 36. The reactor according to item 35 of the scope of patent application, wherein the part of the arched ring portion corresponds to a circular gap and a corresponding groove, wherein the circular gap is formed by the corresponding hole. Each of the floppy disks. 24 1220277 3 7 · The reactor according to item 31 of the scope of patent application, wherein the holes and floppy disks are formed in the front plate, and the grooves and holes are formed in the back plate. 38. The reactor according to item 37 of the scope of patent application, wherein the front plate and the back plate include at least silicon carbide. 39. The reactor according to item 38 of the scope of patent application, wherein at least one of the plates further comprises a closed graphite layer, and the graphite layer is parallel to one plane of the plate. 40. The reactor according to item 31 of the scope of patent application, wherein the front plate and the back plate include at least anodized aluminum. 4 1 · The reactor according to item 23 of the scope of patent application, wherein the annular gas passage is circular. 42. The reactor according to item 23 of the scope of patent application, wherein the annular gas passage is non-circular. 43. A method for constructing a gas diffuser plate for processing semiconductor wafers in a plasma reactor. The gas diffuser plate includes at least silicon carbide and has a plurality of parallel grooves. It communicates upward with each airflow control hole and downward with each row of circular gas channels. The method includes at least the following steps: 25 A ^ U277 forming a parallel groove on one surface of a silicon carbide plate; placing a graphite insert in parallel Depositing a silicon carbide layer on the surface of the silicon carbide plate; heating the silicon carbide plate to remove the graphite insert; milling out a series of circular openings through the deposited silicon carbide layer to communicate with each groove . 44 · A method for constructing a gas diffuser plate for processing semiconductor wafers in a plasma reactor, the gas diffuser plate includes silicon carbide and has a plurality of parallel grooves, and the parallel grooves are upwardly connected to each The gas holes communicate with and downwardly communicate with each row of circular gas channels. The method includes the following steps: forming a parallel groove on a surface of a silicon carbide plate; placing a silicon carbide insert into the parallel groove; depositing a carbide The silicon layer is on the surface of the silicon carbide plate; each column of circular openings is milled to pass through the deposited silicon carbide layer and through the silicon carbide insert to communicate with the parallel grooves. Β 45 · A plasma reactor is used To process a semiconductor wafer, the reactor at least includes: a vacuum processing chamber side wall; a wafer support base for supporting the semi-circular circle in the processing chamber; an RF power source coupled to the wafer support base A parallel processing flow source to the carbon reactor body crystal 26 1220277 a processing gas source; and a gas diffusion plate located at the top of one of the processing chambers, the gas diffusion plate includes at least: a front Board, bit In the processing chamber; a back plate located on the outside of one of the front plates, the gas diffuser plate comprising at least a gas manifold, the gas manifold being adjacent to the back plate, the back plate and the front plate being connected to a composite body, And constitute a component, the component includes at least: (a) an array of holes, which is penetrated in the front plate and communicates with the processing chamber; (b) at least one airflow control hole passes through the back plate and can be located in the back plate; The manifold communicates with at least one of the holes; the hole has a diameter that is used to determine the airflow rate to at least one hole; and (c) an airflow deflection element to change the front and rear plates The inter-air flow, that is, the air flow model in the back plate is transformed into the circular air flow model in the front plate. 46. The reactor according to item 45 of the scope of patent application, wherein: the airflow model of the front plate corresponds to a first radius, and the circular ring model corresponds to a second radius, and the second radius is larger than the first radius The airflow turning element generates a rapid airflow change (a) from a vertical airflow in each airflow model (b) to a horizontal airflow, and the airflow is changed from a first radius to a second radius and then (c) to One vertical airflow for each corresponding circular opening. 27