1337761 (1) 玖、發明說明 【發明所屬之技術領域】 本發明係有關一種欲針對半導體晶圓等的被處理基 板，施行磁控管蝕刻等之半導體處理的磁控管電漿處理裝 置。再者，在此，半導體處理是指在半導體晶圓、LCD基 板等之被處理基板上，利用所定圖案形成半導體層 '絕緣 層、導電層等，藉此欲在該被處理基板上製造半導體設備 或包括連接在半導體設備的配線、電極等之構造物所實施 的各種處理之意。 【先前技術】 近年在較低壓環境中生成高密度的電漿，以施行微細 加工之蝕刻的磁控管電漿蝕刻裝置被實用化。在該裝置 中，於處理空間內，以電力線直角貫通半導體晶圓的方式 形成RF(高頻）電場（即電場方向爲垂直）。再者，於本詳細 說明書中，「垂直方向」是指重力方向。而於處理空間 內，以相對於電力線而令磁力線成爲正交的方式利用永久 磁鐵形成磁場（即磁場方向爲水平）。利用該正交電磁場隨 著電子的漂移運動使磁控管放電，藉此以極高效率施行蝕 刻。 磁控管電漿蝕刻裝置用的磁鐵之其中一例乃爲偶極瓌 形磁鐵。偶極環形磁鐵係具有環圈狀配置在處理室周圍的 複數個各向異性柱狀磁鐵片。該些磁鐵片的磁化方向會稍 微移位，整體形成一樣的水平磁場。 (2) (2)1337761 磁控管電漿蝕刻裝置用的磁鐵之其他例子乃爲多重極 環形磁鐵。多重極環形磁鐵係具有以包圍晶圓的方式成爲 環圈狀且N及S的磁極爲交互鄰接的方式所配置的複數 個磁鐵片。多重極環形磁鐵並不是在晶圓的上面形成磁 場，而是以包圍晶圓周圍的方式形成多重極磁場。上述的 偶極磁場和多重極磁場是配合製程而選用。 茲不限於磁控管電漿蝕刻裝置，有關電漿處理裝置方 面，必須防止電漿到達處理室內的下部而產生異常放電。 因此，在載置晶圓的載置台和處理室壁之間，要在晶圓下 方位置設置圓環狀的擋板，用以阻斷電漿。換言之，擋板 是以將電漿關閉在處理空間內的方式，介設在處理空間和 排氣口之間。擋板係具有複數個連通處理空間和排氣口的 貫通孔。 但如後所述，根據本發明人等的硏究，在習知之磁控 管電漿蝕刻裝置方面’發現會對以上述方式配設的擋板下 方發生電漿泄放、異常放電。 【發明內容】 本發明之目的在於防止磁控管電漿處理裝置對擋板下 方發生電漿泄放、異常放電。 本發明的第1觀點在於磁控管電漿處理裝置中，具備 有： 收納被處理基板的氣密處理室； 和對前述處理室內供給處理氣體的氣體供給系統： -6- (3) 1337761 和令前述處理室內排氣，同時將前述處理室內設 真空的排氣系統，且前述排氣系統係具有形成在前鸿 室之下部的排氣口： 和在前述處理室內隔著限定在比前述排氣口更上 處理空間而互相面對面的上部及下部電極，且前述下 極係作爲供載置前述被處理基板之載置台的機能； 和對前述上部及下部電極間施加電力，並於前述 空間內激勵前述處理氣體而形成轉化爲電漿之電場的 形成系統： 和中心磁力線向著前述處理室之半徑方向形成磁 磁場形成系統： 和以前述電漿關閉在前述處理空間內的方式介設 述處理空間與前述排氣口之間的擋板，且前述擋板係 連通前述處理空間與前述排氣口的複數個貫通孔 '且 擋板_是沿著前述擋板之存在位置的前述磁場之磁力線 置。 本發明的第2觀點乃在於磁控管電漿處理裝置中 具備有： 收納被處理基板的氣密處理室： 和對前述處理室內供給處理氣體的氣體供給系統 和令前述處理室內排氣，同時將前述處理室內設 真空的排氣系統，且前述排氣系統係具有形成前述處 之下部的排氣口； 在前述處理室內隔著限定在比前述排氣口更上側 定在 處理 側之 部電 處理 電場 場的 在前 具有 前述 而配 ，其 定在 理室 之處 13377611337761 (1) Field of the Invention The present invention relates to a magnetron plasma processing apparatus for performing semiconductor processing such as magnetron etching on a substrate to be processed such as a semiconductor wafer. Here, the term "semiconductor processing" refers to forming a semiconductor layer 'insulating layer, a conductive layer, or the like on a substrate to be processed such as a semiconductor wafer or an LCD substrate, thereby fabricating a semiconductor device on the substrate to be processed. Or it is intended to include various processes performed by structures connected to wirings, electrodes, and the like of a semiconductor device. [Prior Art] In recent years, a magnetron plasma etching apparatus which generates a high-density plasma in a low-pressure environment and performs etching by microfabrication has been put into practical use. In this device, an RF (high frequency) electric field is formed (i.e., the electric field direction is vertical) in a processing space in such a manner that a power line penetrates the semiconductor wafer at right angles. Further, in the detailed description, "vertical direction" means the direction of gravity. In the processing space, a permanent magnet is used to form a magnetic field (i.e., the direction of the magnetic field is horizontal) so that the magnetic lines of force are orthogonal with respect to the power line. The magnetron is discharged by the orthogonal electromagnetic field in accordance with the drifting motion of the electrons, thereby performing etching with extremely high efficiency. One example of a magnet for a magnetron plasma etching apparatus is a dipole neodymium magnet. The dipole ring magnet has a plurality of anisotropic columnar magnet pieces arranged in a ring shape around the processing chamber. The magnetization directions of the magnet pieces are slightly shifted, and the same horizontal magnetic field is formed as a whole. (2) (2) 1373761 Another example of a magnet for a magnetron plasma etching apparatus is a multi-pole ring magnet. The multi-pole ring magnet has a plurality of magnet pieces arranged to surround the wafer so as to form a loop shape and the magnetic lines of N and S are alternately adjacent to each other. The multipole ring magnet does not form a magnetic field on the wafer, but forms a multiple pole magnetic field in a manner surrounding the periphery of the wafer. The dipole magnetic field and the multipole magnetic field described above are selected in conjunction with the process. It is not limited to the magnetron plasma etching apparatus. Regarding the plasma processing apparatus, it is necessary to prevent the plasma from reaching the lower portion of the processing chamber to cause abnormal discharge. Therefore, an annular baffle is provided between the mounting table on which the wafer is placed and the wall of the processing chamber to block the plasma under the wafer. In other words, the baffle is interposed between the processing space and the exhaust port in such a manner that the plasma is closed in the processing space. The baffle has a plurality of through holes that communicate the processing space and the exhaust port. However, as will be described later, in the conventional magnetron plasma etching apparatus of the present invention, it has been found that plasma discharge and abnormal discharge occur under the baffle disposed as described above. SUMMARY OF THE INVENTION An object of the present invention is to prevent a magnetron plasma processing apparatus from causing plasma discharge and abnormal discharge under the baffle. According to a first aspect of the present invention, a magnetron plasma processing apparatus includes: an airtight processing chamber that houses a substrate to be processed; and a gas supply system that supplies a processing gas to the processing chamber: -6-(3) 1337761 and An exhaust system that evacuates the processing chamber while providing a vacuum in the processing chamber, and the exhaust system has an exhaust port formed in a lower portion of the front chamber: and is partitioned in the processing chamber from the row a port having an upper surface and a lower electrode facing each other in a processing space, wherein the lower electrode functions as a mounting table on which the substrate to be processed is placed; and an electric power is applied between the upper and lower electrodes in the space a forming system that excites the processing gas to form an electric field converted into a plasma: and a central magnetic field line forms a magnetic magnetic field forming system in a radial direction of the processing chamber: and intervenes the processing space in such a manner that the plasma is closed in the processing space a baffle between the exhaust port and the plurality of through holes that communicate with the processing space and the exhaust port _ Baffle is placed along the magnetic field lines of the present position of the shutter. According to a second aspect of the present invention, a magnetron plasma processing apparatus includes: an airtight processing chamber that houses a substrate to be processed; and a gas supply system that supplies a processing gas to the processing chamber; An exhaust system in which a vacuum is provided in the processing chamber, and the exhaust system has an exhaust port that forms a lower portion of the processing chamber; and a portion of the processing chamber that is disposed on the processing side above the exhaust port The treatment of the electric field field has the foregoing, and it is located in the management room 1337761
理空間而互相面對面的上部及下部電極，且前述下部電極 係作爲供載置前述被處理基板之載置台的機能； 和對前述上部及下部電極間施加電力，並於前述處理 空間內激勵前述處理氣體而形成轉化爲電漿之電場的電場 形成系統； 和中心磁力線向著前述處理室之半徑方向形成磁場的 磁場形成系統； 和將前述電漿關閉在前述處理空間內的方式介設在前 φ 述處理空間與前述排氣口之間的擋板，且前述擋板係具有 連通前述處理空間與前述排氣口的複數個貫通孔，且前述 貫通孔是以對前述擋板之存在位置的前述磁場之磁力線而 言，實際上爲直角的方式相對於前述擋板之表面而傾斜配 置。 本發明的第3觀點，乃屬於以介設在磁控管電漿處理 裝置之處理空間與排氣口之間的方式，安裝在同一裝置的 處理室及載置台的擋板，其具備有： φ 沿著安裝前述擋板之位置的磁場之磁力線而傾斜的切 頭圓錐形狀的本體，且前述本體係具有連通前述處理空間 與前述排氣口的複數個貫通孔； 和將前述本體安裝在前述處理室的外側安裝部： 和將前述本體安裝在前述載置台的內側安裝部。 本發明的第4觀點，乃屬於以介設在磁控管電漿處理 裝置之處理空間與排氣口之間的方式，安裝在同一裝置的 處理室及載置台的擋板，其具備有： -8- (5) (5)1337761 平坦圓板狀的本體，且前述本體係具有連通前述處理 空間與前述排氣口的複數個貫通孔，且前述貫通孔是以對 前述擋板的存在位置的前述磁場之磁力線而言，實際上爲 直角的方式相對於前述本體之表面而傾斜配置； 和將前述本體安裝在前述處理室的外側安裝部； 和將前述本體安裝在前述載置台的內側安裝部。 【實施方式】 本發明人等，在本發明開發的過程中，針對在處理空 間和排氣口之間配設著擋板的習知磁控管電漿蝕刻裝置進 行硏究。其結果得到如以下所述的見解。 以磁控管電漿蝕刻裝置爲代表的磁控管電漿處理裝置 的情形下，擋板通常是配置在比晶圓載置位置更下方的緣 故•磁場的磁力線對擋板而言，是斜斜的通過。電子沿著 滋力線進行螺旋運動的緣故，擋板的貫通孔和磁力線所形 成的角度愈小電子愈容易通過貫通孔。因此，就習知之磁 控管電漿處理裝置來看，認爲擋板並無法充分阻斷電漿， 會對擋板下方發生電漿泄放、異常放電。 於以下針對根據此種見解所構成的本發明實施形態參 照圖面做說明。再者，於以下說明中，在具有略相同機能 及構成的構成要素上，附上相同符號，僅對需要的情況重 複說明。 第1圖是表示具備有關本發明第1實施形態之偶極環 形磁鐵的磁控管RIE電漿蝕刻裝置的斷面圖。該蝕刻裝置 (6) (6)1337761 係具有氣密的處理室（處理容器）1。處理室1是製成由小 徑的上部1 a和大徑的下部1 b所形成段差的圓筒形狀。處 理室1例如表面是由被耐酸鋁處理過的鋁所形成，且可接 地。 於處理室1內配設有水平支持著屬於被處理基板之晶 圓W的載置台2。載置台2亦作爲下部電極的機能。載置 台2係具有例如以鋁所構成的磁心構件2a、和覆蓋磁心 構件2 a之側部及底部的絕緣構件3、和由支持磁心構件 2 a及絕緣構件3的導體所形成的支持底座4。如第6圖所 示，絕緣構件3被三分爲構件3 a、3 b、3 c。 在載置台2的上面配設著供靜電吸附並保持晶圓 W 的靜電夾盤6。靜電夾盤6是由絕緣體所形成，並在其中 配設電極6a。於電極6a連接著直流電源1 6，並從直流電 源1 6施加電壓，藉此利用靜電力例如庫侖力來吸附晶圓 W»在載置台2上的靜電夾盤6之周圍配設聚焦環5。吸 附在靜電夾盤6的晶圓W之上面和聚焦環5和上面爲整 齊一致的。 在載置台2的磁心構件2 a之內部形成冷媒室1 7。於 冷媒室17中，冷媒是以透過冷媒導入管17a導入的同時 而自冷媒排出管17b排出的方式進行循環。來自冷媒的冷 熱是透過載置台2而針對晶圓W傳熱，藉此晶圓W的處 理面會被控制在所希望的溫度。而熱傳遞氣體例如He氣 會經由氣體導入機構1 8透過氣體供給線1 9被導入到靜電 夾盤6的表面和晶圓W的背面之間。藉此，即使處理室1 -10- (7) (7)1337761 藉著排氣系統1 2被排氣並保持在真空中，仍可維持靜電 夾盤6與晶圓w之間的熱傳遞，利用循環於冷媒室1 7中 的冷媒’就能有效冷卻晶圓W。 載置台2可利用包括滾珠螺桿7的滾珠螺桿機構進行 昇降。支持底座4之下方的驅動部分是用不銹鋼（SUS)製 的波紋管8加以覆蓋。在波紋管8的外側配設著波紋管外 殻9。 在載置台2與處理室1的內壁之間，於晶圓W的下 方位置配設著切頭圓錐形狀的擋板1 0。擋板1 0是安裝在 載置台2之外周的安裝構件24及處理室1，透過處理室1 而接地。有關擋板10方面乃於後面做詳述。 在處理室1之下部1 b的側壁形成排氣口丨1 ,於排氣 口 1 1連接排氣系統1 2。藉著使排氣系統丨2的真空幫浦 作動，令處理室1內進行排氣就能減壓到所指定的真空 度。一方面，在處理室1之下部1 b的側壁上側配設著開 閉半導體晶圓W之搬入、搬出口的閘閥1 3。 載置台2是透過整合器14而連接著電漿形成用的 RF(高頻）電源15。由RF電源15將13.56MHz以上之所指 定的頻率（例如13.56MHz或40MHz)的RF電力供給至載 置台2。一方面，淋浴噴頭20是面對著載置台2而與載 置台2平行地配設。淋浴噴頭2 0係作爲上部電極的機 能，且可接地。因而，作爲下部電極機能的載置台2及作 爲上部電極機能的淋浴噴頭20係構成一對平行的平:丨反電 極。 -11 - (8) (8)1337761 淋浴噴頭2 0是形成作爲處理室1的頂壁部分。在淋 浴噴頭2 0的內部形成噴頭空間2 1。在淋浴噴頭2 0的下 面形成連通至噴頭空間21的多數個氣體吐出孔22。在淋 浴噴頭2 0的上部形成連通至噴頭空間2 1的氣體導入部 2〇a。在氣體導入部20a係透過氣體供給配管23a而連接 著用以供給所指定之處理氣體的處理氣體供給系統2 3。 來自處理氣體供給系統23的處理氣體是透過氣體供 給配管23a、氣體導入部20a而供給到淋浴噴頭20的噴 頭空間2 1。而處理氣體會從氣體吐出孔2 2均勻地向處理 室1內吐出。由處理氣體供給系統2 3所供給的處理氣體 可採用鹵素系氣體、Ar氣體' 〇2氣體等平常在該領域所 使用的氣體。 在處理室1之上部1 a的周圍，以磁場的中心磁力線 比擋板1 〇更向上的方式，例如以中心磁力線與載置台2 上的晶圓W之上面爲整齊一致的方式水平配置偶極環形 磁鐵3 0。偶極環形磁鐵3 0可利用旋轉機構3 5在水平面 內旋轉。 第2圖係模式表示偶極環形磁鐵3 0的水平斷面圖。 偶極環形磁鐵3 0乃如第2圖所示，複數個各向異性柱狀 磁鐵片3 1是安裝在環圈狀之磁性體的殻體3 2所構成。此 例中，呈圓柱狀的十六個各向異性柱狀磁鐵片3 1是配置 成環圈狀。第2圖中，磁鐵片31之中所示的箭頭是表示 磁化方向。如第2圖所示’磁鐵片3 1的磁化方向會稍微 偏移，成爲整體而向著單一方向的同—水平磁場B是形成 -12- 1337761 Ο) 在晶圓W上。 第3圖是說明形成在處理室1內的電場及磁場的模式 圖。如第3圖所示’在載置台2與淋浴噴頭2 0之間的處 理空間S，是利用由RF電源15施加在載置台2的RF電 力，形成垂直方向的R F電場E。並在處理空間S利用偶 極環形磁鐵3 0於晶圓W之上形成水平磁場B。利用像這 樣所形成的正交電磁場進行磁控管放電’藉此形成高能量 狀態之蝕刻氣體的電漿’就可蝕刻晶圓w上之所指定的 膜。 以下，針對擋板1 〇做詳細說明。第4圖係切取一部 分來表示擋板10的立體圖。第5圖係表示擋板1〇之一部 分的平面圖》第6圖係放大表示擋板丨〇之安裝狀態的斷 面圖。 擋板10係對金屬例如鋁而言’爲了提高對電漿的耐 性，而熔射陶瓷例如氧化鋁所形成。擋板1 〇係在中央具 有插入載置台的圓形孔，同時在該面具有設有呈圓形的多 數個氣體通過孔（貫通孔）l〇b的切頭圓錐形狀的本體 1 〇a。在本體1 〇a的外周部形成外側安裝部1 0c，該外側 安裝部10c會被插入並安裝在處理室1之安裝部lc的缺 口部ld(參考第6圖）。在本體10a的內周部形成內側安裝 部l〇d，該內側安裝部i〇d會被安裝在載置台2之周圍的 安裝構件24上。 外側安裝部1 0 c係具有螺栓插入孔1 0 e。外側安裝部 10c與處理室的安裝部ic是利用自處理室1的上部被插 -13 - (10) (10)1337761 入的複數個螺栓25所安裝。一方面，內側安裝部】〇d係 具有螺栓插入孔1 0 f »內側安裝部i 〇 d與安裝.構件2 4是 利用螺栓2 6所安裝。 撞板10乃如上所述，因爲本體10a是做成切頭圓錐 形狀’於垂直斷面中’自中央側向著端部側而於上方以角 度Θ做傾斜。此時，角度θ乃如第7 A圖所示，是以略與 擋板10的存在位置的磁場的傾斜角度（通過擋板1〇的磁 力線的傾斜角度）相同的方式所設定的。例如角度θ是設 定在10〜45度。 氣體通過孔1 Ob是以電漿極難通過，且能確保充分排 氣傳導的方式來決定其孔徑及縱橫比。例如孔徑是設定在 1.7mm、高度（即擋板1〇的厚度）是設定在3mm。氣體通過 孔1 的形狀並不限於圓形，可爲橢圓形，也可爲裂縫 狀。 換句話說，擋板1 0是以將電漿關閉在處理空間S內 的方式介設在處理空間S與排氣口 11之間。擋板1 0係沿 著其存在位置的磁場之磁力線而配置。擋板1 0係具有連 通處理空間S與排氣口 11的複數個氣體通過孔（貫通 孔）1 Ob。如第6圖所示，氣體通過孔10b對擋板10的正 背面而言，實際上爲直角的方式所形成。因此，氣體通過 孔1 〇 b是以針對擋板1 〇之存在位置的磁場之磁力線實際 上爲直角的方式所配置。 以下，針對像這樣所構成的磁控管RIE電漿蝕刻裝置 之動作做說明。 -14 - (11) (11)1337761 首先’打開閘閥1 3並將晶圓W搬入到處理室丨內， 且載置在載置台2。其次，自直流電源16對靜電夾盤6 的電極6 a施加所指定的電壓，且將晶圓W利用庫侖力吸 附保持在靜電夾盤6。接著，使載置台2上昇到第1圖所 示的位置，利用排氣系統1 2的真空幫浦透過排氣口 1 1使 處理室1內進行排氣。 其次，處理室1內一邊排氣一邊從處理氣體供給系統 2 3將蝕刻用之所指定的處理氣體導入到處理室1內.且 將處理室內的壓力保持在例如1.33〜13.3Pa左右。並自 R F電源1 5對載置台2供給1 3 . 5 6 Μ Η z以上之所指定的R F 電力。藉此在屬於上部電極的淋浴噴頭2 0和屬於下部電 極的載置台2之間形成RF電場。 此時，在晶圓W之上係利用偶極環形磁鐵3 0形成水 平磁場Β。因此|會於存在晶圓W之電極間的處理空間S 形成正交電磁場，就能利用藉此所產生的電子之漂移而產 生磁控管放電。並且還可利用經由該磁控管放電所形成的 蝕刻氣體的電漿來蝕刻晶圓W之所指定的膜。 第7Α圖係表示有關第1實施形態的擋板與磁力線之 關係的模式圖。第7 Β圖係表示習知之擋板與磁力線之關 係的模式圖。如第7Α圖及第7Β圖所示，以垂直斷面觀 看利用偶極環形磁鐵3 0所形成之向著單一方向的水平磁 場之情況，在晶圓W上面，磁力線方向是成爲水平。但 該水平磁場會隨著自晶圓 W離開垂直方向而增加垂直成 份》 -15- (12) (12)1337761 像這樣的狀況下，如習知以水平配置擋扳1 0C的情況 下，擋板1 0 C和磁力線M F L的關係乃如第7 B圖所示。即 擋板1 〇爲平坦圓板狀，不管磁力線MFL的方向，可水平 配置。擋板的貫通孔1 0 C b是以對擋板1 0 C的正背面而 言，實際上爲直角的方式所形成。 因而，於第7B圖所示的狀態中，磁力線MFL對擋板 10C而言，爲傾斜通過，且於擋板10C的存在位置中，磁 場存在著較多的垂直成份。電子沿著磁力線MFL進行螺 旋運動的緣故，擋板的貫通孔1 〇Cb和磁力線MFL所形成 的角度愈小電子愈容易通過貫通孔1 〇Cb。因此，就習知 磁控管電漿處理裝置來看，擋板10C並無法充分阻斷電 漿，會對擋板1 0C下方發生電漿泄放 '異常放電。 對此，有關第1實施形態之擋板1 〇的情形，擋板10 與磁力線M F L的關係乃如第7 A圖所示。即擋板1 〇爲切 頭圓錐形狀，並沿著磁力線MFL向著半徑方向往外向上 傾斜而配置。擋板的貫通孔1 〇b對擋板1 〇的正背面而 言，實際上爲直角的方式所形成。 因而，於第7A圖所示的狀態中，磁力線MFL是相對 於擋板10而平行通過，且於擋板1〇的存在位置中’磁場 幾乎沒有垂直成份。因此，沿著磁力線M F L而螺旋運動 的電子很難通過形成在擋板的貫通孔l〇b，就可提高電漿 阻斷效果。因而，能防止電漿泄放、異常放電。 再者，擋板1 〇爲切頭圓錐形狀，並沿著磁力線而向 著半徑方向往外向上傾斜而配置的緣故，該部分擋板10 • 16- (13) (13)1337761 的面積變得很大。因此，於擋板1 0可形成比習知之平坦 圓板狀的擋板10C多更多個氣體通過孔（貫通孔）10b。藉 此，就能提高處理空間S與排氣口 1 1之間的排氣傳導。 擋板1 0的傾斜角Θ是以通過擋板的磁力線之垂直方 向的傾斜角度，就是利用略與擋板1 0之存在位置的磁場 之垂直方向的傾斜角度相同的角度傾斜爲佳。藉此，相對 於擋板10之磁場的垂直成份實際上會成爲不存在的狀 態，就可更進一步提高電漿阻斷效果。 其次，針對根據磁場方向的模擬求得最適當的擋板配 置結果做說明。在此，就300mm晶圓用的裝置來看，在 晶圓中心的磁束密度設定在〇.〇12T(120Gauss)。第8A圖 係表示磁場方向的模擬結果與習知之擋板1 0C之關係的 圖。第8 B圖係表示磁場方向的模擬結果與有關第1實施 形態的擋板1 〇之關係的圖。 第8A圖係表不以晶圓上面的垂直位置爲Z = 0’厚度 中心爲Z= - 50(mm)的方式水平配置擋板10C的情形。此 時，了解到擋板1 0C之存在位置的磁場，係垂直成份比較 大，電漿遮蔽效果小。對此，如第8 B圖所示，了解到擋 板1 0的中央側部分會向下傾斜，Θ會偏移2 3 . 8 5 °，成爲 略與磁場之傾斜角度相同。 基於該結果，實際製成具此種傾斜角度的切頭圓錐形 狀的擋板，且將擋板組裝在裝置中進行磁控管電漿試驗。 其結果，確認幾乎不會發生電漿泄放，也幾乎不會在擋板 下方發生異常放電。 -17- (14) (14)1337761 第9圖係表示有關本發明第2實施形態的磁控管RIE 電漿蝕刻裝置的擋板和磁力線之關係的模式圖。有關該實 施形態的裝置，乃爲擋板以外的部分實際上是與有關前述 實施形態之第1圖所示的裝置相同。 連第2實施形態中，擋板1 0X也是以電漿關閉在處 理空間S內的方式介設在處理空間S與排氣口 1 1 (參考第 1圖）之間。在擋板1 〇X形成連通處理空間S與排氣口 1 1 的複數個氣體通過孔（貫通孔）l〇Xb。再者，擋板10X是以 實際上與第1圖所示之擋板相同的形態（藉由外側安裝部 l〇c及內側安裝部10d)，安裝在處理室1及載置台2。擋 板1 0X係對金屬例如鋁而言，爲了提高對電漿的耐性， 而熔射陶瓷例如氧化鋁所形成。 擋板1 0 X爲平坦圓板狀，不管其存在位置的磁場之 磁力線的方向，可水平配置。但氣體通過孔（貫通孔）1 OXb 對擋板1 0 X之存在位置的磁場之磁力線而言，實際上爲 直角的方式相對於擋板 1 ox的正背面傾斜所形成。因 此，沿著磁力線而螺旋運動的電子很難通過形成在擋板的 貫通孔1 OXb，就能提高電漿阻斷效果。因而能防止電漿 泄放、異常放電。在此，例如對擋板10 X的正背面而 言，貫通孔l〇Xb例如設定形成45〜80度的角度。 再者，按照第2實施形態，擋板1 0X不需要水平， 氣體通過孔（貫通孔）1 OXb對擋板10X之存在位置的磁場 之磁力線而言，實際上爲直角傾斜地形成主要部分。而氣 體通過孔1 OXb的形狀並不限於圓形，可爲橢圓形，也珂 (15) (15)1337761 爲裂縫狀。 本發明並不限於上述實施形態，可爲各種變形。例如 磁場形成手段不是偶極環形磁鐵，可採用在晶圓周圍即處 理室的內壁近傍形成磁場的多重極環形磁鐵。第1 〇圖係 模式表示多重極環形磁鐵40的水平斷面圖。多重極環形 磁鐵40係具有在處理室1的周圍以環圈狀且N及S的磁 極交互隣接（磁極的方向爲交互反轉）之方式所配置的複數 個磁鐵片4 2。多重極環形磁鐵4 0是形成多重極磁場，且 其磁束密度在處理室1的內壁面，例如爲0.02〜0.2T(20〇 〜2000Gauss)左右，在晶圓W的中心部爲0.005T(5Gauss) 左右。此時，隨著第 7A圖所示之形態，沿著形成在晶圓 周圍之多重極磁場的磁力線配置擋板。取而代之，按照第 9圖所示的形態，針對多重極磁場的磁力線以直角傾斜的 方式形成擋板的氣體通過孔。 而上述實施形態中，處理室是形成圓筒狀，載置台是形 成圓柱狀，擋板是形成切頭圓錐形狀或平坦圓板狀。但擋 板可形成適合處理室及載置台之形狀的各種形狀。 更且’上述實施形態中，乃針對應用於磁控管電漿蝕 刻裝置的例子來表示本發明。但本發明也適用於其他電漿 處理。亦即也可藉由將處理氣體由蝕刻用氣體改變爲公知 的CVD用氣體，形成磁控管電漿CVD裝置。而且也可藉 由在處理室內與被處理基板面對面地配置標靶，形成磁控 管電漿濺鍍裝置。更且被處理基板也可不是半導體晶圓， 也可爲液晶顯示裝置（LCD)用基板等其他基板。 -19 - (16) (16)1337761 【圖式簡單說明】 第1圖係表示有關本發明第1實施形態之具備有偶極 環形磁鐵的磁控管RI E電漿蝕刻裝置的斷面圖。 第2圖係模式表示第1圖圖式之裝置的偶極環形磁鐵 的水平斷面圖。 第3圖係說明形成在第1圖圖式之裝置的處理室內的 電場及磁場的模式圖。 · 第4圖係切取一部分表示第1圖之裝置的擋板的立體 圖。 第5圖係表示第1圖之裝置的擋板的部分平面圖。 第6圖係放大表示第1圖之裝置的擋板安裝狀態的斷 面圖。 第7 A圖係表示有關第1實施形態的擋板與磁力線之 關係的模式圖。 第7 B圖係表示習知擋板與磁力線之關係的模式圖。 肇 第8A圖係表示磁場方向之模擬結果與習知擋板之關 係的圖。 第8B圖係表示磁場方向之模擬結果與有關第1實施 形態之擋板之關係的圖。 第9圖係表示有關本發明之第2實施形態的磁控管 RIE電漿蝕刻裝置的擋板與磁力線之關係的模式圖。 第10圖係模式表示多重極環形磁鐵的水平斷面圖。 -20- (17) (17)1337761 [圖號說明] 1 :處理室（處理容器） 1 a :上部 1 b :下部 1 c :安裝部 1 d :缺口部 2 :載置台 2 a :磁心構件 3 :絕緣構件 3a、 3b、 3c:構件 4 :支持底座 5 :聚焦環 6 :靜電夾盤 6a :電極 7 :滾珠螺桿 8 :波紋管 9 =波紋管外殼 1 〇 :撞板 1 Oa :本體 l〇b _·氣體通過孔（貫通孔） l〇c :外側安裝部 l〇d :內側安裝部 10e、10f :螺栓插入孔 1 0 C b :貫通孔 (18) (18)1337761 1 〇 C :擋板 1 0 b :貫通孔 10X :擋板 l〇Xb :貫通孔 1 1 :排氣口 1 2 :排氣系統 1 3 :閘閥 1 5 : R F電源 φ 1 6 :直流電源 17 :冷媒室 1 7 a :冷媒導入管 1 7 b :冷媒排出管 1 8 :氣體導入機構 1 9 :氣體供給線 2 0 :淋浴噴頭 20a :氣體導人部 籲 2 1 :噴頭空間 2 2 :氣體吐出孔 2 3 :處理氣體供給系統 2 3 a :氣體供給配管 24 :安裝構件 2 5、2 6 :螺栓 3 〇 :偶極環形磁鐵 3 1 :各向異性柱狀磁鐵片 -22- (19) (19)1337761 32 :殼體 3 5 :旋轉機構 4 0 :多重極環形磁鐵 4 2 :磁鐵片 W :晶圓 B :水平磁場 5 :處理空間 E : R F電場 MFL :磁力線Upper and lower electrodes facing each other in a space, and the lower electrode functions as a mounting table on which the substrate to be processed is placed; and electric power is applied between the upper and lower electrodes, and the processing is excited in the processing space a gas forming system for converting an electric field into a plasma; and a magnetic field forming system in which a central magnetic field line forms a magnetic field in a radial direction of the processing chamber; and a method of closing the plasma in the processing space a baffle between the processing space and the exhaust port, wherein the baffle has a plurality of through holes that communicate with the processing space and the exhaust port, and the through hole is the magnetic field that is located at a position of the baffle The magnetic lines of force are actually arranged at a right angle with respect to the surface of the baffle. A third aspect of the present invention is a baffle attached to a processing chamber and a mounting table of the same device so as to be interposed between a processing space of a magnetron plasma processing apparatus and an exhaust port, and includes: a body having a tangential conical shape inclined along a magnetic field line of a magnetic field at a position where the baffle is mounted, and the system has a plurality of through holes communicating with the processing space and the exhaust port; and mounting the body in the foregoing The outer mounting portion of the processing chamber: and the inner mounting portion that mounts the main body on the mounting table. A fourth aspect of the present invention is a baffle attached to a processing chamber and a mounting table of the same device so as to be interposed between a processing space of a magnetron plasma processing apparatus and an exhaust port, and includes: -8- (5) (5) 1337761 a flat disk-shaped body, and the system has a plurality of through holes communicating with the processing space and the exhaust port, and the through hole is a position where the baffle exists The magnetic field lines of the magnetic field are actually disposed at a right angle with respect to the surface of the body; and the body is mounted on the outer mounting portion of the processing chamber; and the body is mounted on the inner side of the mounting table. unit. [Embodiment] The present inventors conducted a study on a conventional magnetron plasma etching apparatus in which a baffle is disposed between a treatment space and an exhaust port in the course of the development of the present invention. As a result, the findings as described below were obtained. In the case of a magnetron plasma processing apparatus typified by a magnetron plasma etching apparatus, the baffle is usually disposed below the wafer mounting position. • The magnetic field line of the magnetic field is oblique to the baffle. Passed. The smaller the angle formed by the through-holes of the baffle and the magnetic lines of force, the easier the electrons pass through the through-holes. Therefore, in view of the conventional magnetron plasma processing apparatus, it is considered that the baffle does not sufficiently block the plasma, and plasma discharge and abnormal discharge occur under the baffle. The embodiments of the present invention constructed in accordance with such knowledge will be described below with reference to the drawings. In the following description, constituent elements having substantially the same functions and configurations are denoted by the same reference numerals, and the description will be repeated only as necessary. Fig. 1 is a cross-sectional view showing a magnetron RIE plasma etching apparatus including a dipole ring magnet according to a first embodiment of the present invention. The etching apparatus (6) (6) 1337761 is an airtight processing chamber (processing container) 1. The processing chamber 1 is formed into a cylindrical shape formed by a step formed by the upper portion 1 a of the small diameter and the lower portion 1 b of the large diameter. The processing chamber 1 has, for example, a surface formed of aluminum treated with an alumite and is grounded. A mounting table 2 horizontally supporting the crystal W belonging to the substrate to be processed is disposed in the processing chamber 1. The mounting table 2 also functions as a lower electrode. The mounting table 2 has a core member 2a made of, for example, aluminum, and an insulating member 3 covering the side and bottom of the core member 2a, and a support base 4 formed of a conductor supporting the core member 2a and the insulating member 3. . As shown in Fig. 6, the insulating member 3 is divided into members 3a, 3b, 3c. An electrostatic chuck 6 for electrostatically adsorbing and holding the wafer W is disposed on the upper surface of the mounting table 2. The electrostatic chuck 6 is formed of an insulator and is provided with an electrode 6a therein. A DC power source 16 is connected to the electrode 6a, and a voltage is applied from the DC power source 16 to thereby absorb the wafer W» by electrostatic force such as Coulomb force. The focus ring 5 is disposed around the electrostatic chuck 6 on the mounting table 2. . The wafer W adsorbed on the electrostatic chuck 6 is aligned with the focus ring 5 and the upper surface thereof. A refrigerant chamber 17 is formed inside the core member 2a of the mounting table 2. In the refrigerant chamber 17, the refrigerant is circulated so as to be discharged from the refrigerant discharge pipe 17b while being introduced through the refrigerant introduction pipe 17a. The heat from the refrigerant is transferred to the wafer W through the mounting table 2, whereby the processing surface of the wafer W is controlled at a desired temperature. On the other hand, a heat transfer gas such as He gas is introduced between the surface of the electrostatic chuck 6 and the back surface of the wafer W through the gas supply line 19 via the gas introduction mechanism 18. Thereby, even if the processing chamber 1-10-(7)(7)1337761 is exhausted and maintained in a vacuum by the exhaust system 12, the heat transfer between the electrostatic chuck 6 and the wafer w can be maintained. The wafer W can be effectively cooled by the refrigerant 'circulated in the refrigerant chamber 17. The stage 2 can be lifted and lowered by a ball screw mechanism including a ball screw 7. The driving portion below the support base 4 is covered with a bellows 8 made of stainless steel (SUS). A bellows casing 9 is disposed outside the bellows 8. A baffle plate 10 having a conical cone shape is disposed between the mounting table 2 and the inner wall of the processing chamber 1 at a position below the wafer W. The baffle 10 is a mounting member 24 and a processing chamber 1 attached to the outer periphery of the mounting table 2, and is grounded through the processing chamber 1. The aspect of the baffle 10 is described in detail later. An exhaust port 丨1 is formed in a side wall of the lower portion 1b of the processing chamber 1, and an exhaust system 12 is connected to the exhaust port 1 1. By operating the vacuum pump of the exhaust system 丨2, the inside of the processing chamber 1 can be decompressed to a specified degree of vacuum. On the other hand, a gate valve 13 that opens and closes the loading and unloading of the semiconductor wafer W is disposed on the upper side of the side wall of the lower portion 1b of the processing chamber 1. The mounting table 2 is connected to an RF (high-frequency) power source 15 for plasma formation through the integrator 14. RF power of a frequency specified by 13.56 MHz or more (e.g., 13.56 MHz or 40 MHz) is supplied from the RF power source 15 to the stage 2. On the other hand, the shower head 20 is disposed in parallel with the mounting table 2 facing the mounting table 2. The shower head 20 is a function of the upper electrode and can be grounded. Therefore, the mounting table 2 as the lower electrode function and the shower head 20 as the upper electrode function constitute a pair of parallel flat: anti-electrodes. -11 - (8) (8) 1137761 The shower head 20 is formed as a top wall portion of the processing chamber 1. A head space 2 1 is formed inside the shower head 20. A plurality of gas discharge holes 22 that communicate with the head space 21 are formed below the shower head 20. A gas introduction portion 2A that communicates with the head space 2 1 is formed in the upper portion of the shower head 20. The gas introduction unit 20a is connected to the processing gas supply system 23 for supplying the predetermined processing gas through the gas supply pipe 23a. The processing gas from the processing gas supply system 23 is supplied to the head space 21 of the shower head 20 through the gas supply pipe 23a and the gas introduction unit 20a. The process gas is uniformly discharged into the processing chamber 1 from the gas discharge port 2 2 . The processing gas supplied from the processing gas supply system 23 can be a gas commonly used in the field such as a halogen-based gas or an Ar gas '〇2 gas. The dipole is horizontally arranged around the upper portion 1 a of the processing chamber 1 such that the center magnetic field line of the magnetic field is higher than the baffle plate 1 , for example, the central magnetic field line and the upper surface of the wafer W on the mounting table 2 are aligned. Ring magnet 30. The dipole ring magnet 30 can be rotated in the horizontal plane by the rotating mechanism 35. Fig. 2 is a horizontal sectional view showing a dipole ring magnet 30. As shown in Fig. 2, the dipole ring magnet 30 is composed of a plurality of anisotropic columnar magnet pieces 31 which are attached to a ring-shaped magnetic body casing 32. In this example, sixteen anisotropic columnar magnet pieces 31 which are cylindrical in shape are arranged in a loop shape. In Fig. 2, the arrow shown in the magnet piece 31 indicates the magnetization direction. As shown in Fig. 2, the magnetization direction of the magnet piece 3 1 is slightly shifted, and the same-horizontal magnetic field B in a single direction is formed on the wafer W in the same direction. Fig. 3 is a schematic view for explaining an electric field and a magnetic field formed in the processing chamber 1. As shown in Fig. 3, the processing space S between the mounting table 2 and the shower head 20 is formed by the RF power applied to the mounting table 2 by the RF power source 15 to form an R F electric field E in the vertical direction. A horizontal magnetic field B is formed on the wafer W by the dipole ring magnet 30 in the processing space S. By using a quadrature electromagnetic field formed in this manner to perform a magnetron discharge 'by forming a plasma of a high energy state etching gas', the specified film on the wafer w can be etched. The baffle 1 〇 will be described in detail below. Fig. 4 is a perspective view showing a portion of the shutter 10 taken out. Fig. 5 is a plan view showing a part of the baffle plate 1 and Fig. 6 is an enlarged cross-sectional view showing the state in which the baffle plate is mounted. The baffle 10 is formed of a molten ceramic such as alumina for the purpose of improving resistance to plasma for a metal such as aluminum. The baffle 1 has a circular hole in the center which is inserted into the mounting table, and has a body 1 〇a having a conical shape with a plurality of gas passage holes (through holes) lb in a circular shape. An outer mounting portion 10c is formed on the outer peripheral portion of the main body 1a, and the outer mounting portion 10c is inserted and attached to the notch portion ld of the mounting portion 1c of the processing chamber 1 (refer to Fig. 6). An inner mounting portion 10d is formed on the inner peripheral portion of the body 10a, and the inner mounting portion i?d is attached to the mounting member 24 around the mounting table 2. The outer mounting portion 10c has a bolt insertion hole 10e. The outer mounting portion 10c and the mounting portion ic of the processing chamber are mounted by a plurality of bolts 25 inserted into the upper portion of the processing chamber 1 by -13 - (10) (10) 1137761. On the one hand, the inner mounting portion 〇d has a bolt insertion hole 1 0 f » the inner mounting portion i 〇 d and the mounting member 2 4 is attached by the bolt 26 . The striker 10 is as described above, since the body 10a is formed into a truncated conical shape 'in a vertical cross section' from the center side toward the end side and inclined upward at an angle Θ. At this time, the angle θ is set as shown in Fig. 7A, and is set to be the same as the inclination angle of the magnetic field (the inclination angle of the magnetic force line passing through the shutter 1A) slightly at the position where the shutter 10 is present. For example, the angle θ is set at 10 to 45 degrees. The gas passage hole 1 Ob determines the pore diameter and aspect ratio in such a manner that the plasma is extremely difficult to pass and ensures sufficient exhaust gas conduction. For example, the aperture is set at 1.7 mm, and the height (i.e., the thickness of the baffle 1 )) is set at 3 mm. The shape of the gas passage hole 1 is not limited to a circular shape, and may be elliptical or crack-like. In other words, the baffle 10 is interposed between the processing space S and the exhaust port 11 in such a manner that the plasma is closed in the processing space S. The baffle 10 is disposed along the magnetic field lines of the magnetic field at its position of existence. The baffle 10 has a plurality of gas passage holes (through holes) 1 Ob that open the processing space S and the exhaust port 11. As shown in Fig. 6, the gas passage hole 10b is formed in a manner of a right angle to the front and back surfaces of the baffle 10. Therefore, the gas passage hole 1 〇 b is disposed such that the magnetic field lines of the magnetic field of the baffle 1 存在 are actually at right angles. Hereinafter, the operation of the magnetron RIE plasma etching apparatus configured as described above will be described. -14 - (11) (11)1337761 First, the gate valve 13 is opened and the wafer W is carried into the processing chamber and placed on the mounting table 2. Next, the specified voltage is applied from the DC power source 16 to the electrode 6a of the electrostatic chuck 6, and the wafer W is adsorbed and held by the electrostatic chuck 6 by Coulomb force. Next, the mounting table 2 is raised to the position shown in Fig. 1, and the inside of the processing chamber 1 is exhausted by the vacuum pump of the exhaust system 1 through the exhaust port 1 1 . Next, in the processing chamber 1, the processing gas designated for etching is introduced into the processing chamber 1 from the processing gas supply system 2 while exhausting, and the pressure in the processing chamber is maintained at, for example, about 1.33 to 13.3 Pa. And the R F power is supplied from the R F power source 15 to the mounting table 2 by the specified R F power of 1 3 . 5 6 Μ Η z or more. Thereby, an RF electric field is formed between the shower head 20 belonging to the upper electrode and the mounting table 2 belonging to the lower electrode. At this time, a horizontal magnetic field 形成 is formed on the wafer W by the dipole ring magnet 30. Therefore, a quadrature electromagnetic field is formed in the processing space S between the electrodes of the wafer W, and the magnetron discharge can be generated by the drift of the electrons generated thereby. It is also possible to etch the film of the wafer W by using a plasma of an etching gas formed by the discharge of the magnetron. Fig. 7 is a schematic view showing the relationship between the baffle and the magnetic lines of force in the first embodiment. Figure 7 is a schematic diagram showing the relationship between a conventional baffle and magnetic lines of force. As shown in Fig. 7 and Fig. 7 , the horizontal magnetic field formed by the dipole ring magnet 30 in a single direction is viewed from a vertical cross section, and the direction of the magnetic field line is horizontal on the wafer W. However, the horizontal magnetic field will increase the vertical component as it moves away from the vertical direction of the wafer W. -15- (12) (12) 13377761 Like this, as is known in the case of horizontally disposing the gear 1 0C, The relationship between the board 10 C and the magnetic field line MFL is as shown in Fig. 7B. That is, the baffle plate 1 is a flat disc shape, and can be horizontally arranged regardless of the direction of the magnetic flux line MFL. The through hole 10 Cb of the baffle is formed so as to be a right angle to the front and back of the baffle 110c. Therefore, in the state shown in Fig. 7B, the magnetic field lines MFL are obliquely passed through the baffle 10C, and the magnetic field has a large number of vertical components in the existence position of the baffle 10C. The smaller the angle formed by the through holes 1 〇 Cb and the magnetic lines MFL of the baffle, the easier the electrons pass through the through holes 1 〇 Cb because the electrons are spirally moved along the magnetic lines of force MFL. Therefore, in the case of the conventional magnetron plasma processing apparatus, the baffle 10C does not sufficiently block the plasma, and the plasma discharge "abnormal discharge" occurs under the baffle 10C. On the other hand, in the case of the baffle 1 第 of the first embodiment, the relationship between the baffle 10 and the magnetic lines of force M F L is as shown in Fig. 7A. That is, the baffle plate 1 is in the shape of a truncated cone, and is disposed so as to be inclined outward in the radial direction along the magnetic force line MFL. The through hole 1 〇b of the baffle is formed in a manner perpendicular to the front and back sides of the baffle 1 〇. Therefore, in the state shown in Fig. 7A, the magnetic lines of force MFL pass in parallel with respect to the shutter 10, and the magnetic field has almost no vertical component in the position where the shutter 1 is present. Therefore, it is difficult for electrons spirally moving along the magnetic force line M F L to pass through the through holes l 〇 b formed in the baffle plate, thereby improving the plasma blocking effect. Therefore, it is possible to prevent plasma discharge and abnormal discharge. Further, since the baffle plate 1 has a truncated cone shape and is arranged to be inclined outward in the radial direction along the magnetic lines of force, the area of the partial baffle 10 • 16-(13) (13) 1337761 becomes large. . Therefore, the baffle 10 can form more gas passage holes (through holes) 10b than the conventional flat disk-shaped baffle plate 10C. Thereby, the exhaust gas conduction between the processing space S and the exhaust port 1 can be improved. The inclination angle Θ of the baffle 10 is preferably an inclination angle in a direction perpendicular to a magnetic field line passing through the baffle plate, that is, an inclination angle which is the same as an inclination angle in a direction perpendicular to a magnetic field in a position where the baffle 10 is present. Thereby, the vertical component of the magnetic field with respect to the baffle plate 10 actually becomes a non-existent state, and the plasma blocking effect can be further improved. Next, the most appropriate configuration of the baffle is obtained for the simulation based on the direction of the magnetic field. Here, in the case of a device for a 300 mm wafer, the magnetic flux density at the center of the wafer is set at 〇.〇12T (120 Gauss). Fig. 8A is a diagram showing the relationship between the simulation result of the magnetic field direction and the conventional baffle 10C. Fig. 8B is a view showing the relationship between the simulation result of the magnetic field direction and the baffle 1 有关 of the first embodiment. Fig. 8A shows a case where the baffle 10C is horizontally arranged in such a manner that the vertical position on the wafer is Z = 0' and the center is Z = - 50 (mm). At this time, the magnetic field at the position where the baffle 10C exists is known to have a large vertical component and a small plasma shielding effect. In this regard, as shown in Fig. 8B, it is understood that the center side portion of the shutter 10 is inclined downward, and the Θ is offset by 2 3 . 8 5 °, which is slightly the same as the inclination angle of the magnetic field. Based on this result, a cone-shaped baffle having such an inclined angle was actually produced, and the baffle was assembled in the apparatus for magnetron plasma test. As a result, it was confirmed that plasma discharge was hardly occurred, and abnormal discharge was hardly occurred under the baffle. -17- (14) (14) 1137761 Fig. 9 is a schematic view showing the relationship between the baffle and the magnetic lines of force in the magnetron RIE plasma etching apparatus according to the second embodiment of the present invention. The device according to this embodiment is substantially the same as the device shown in Fig. 1 of the above-described embodiment. In the second embodiment, the baffle 10X is also interposed between the processing space S and the exhaust port 1 1 (refer to Fig. 1) so that the plasma is closed in the processing space S. The baffle 1 〇X forms a plurality of gas passage holes (through holes) l〇Xb that communicate the processing space S with the exhaust port 1 1 . Further, the baffle 10X is attached to the processing chamber 1 and the mounting table 2 in the same manner as the baffle shown in Fig. 1 (by the outer mounting portion 10c and the inner mounting portion 10d). The baffle 10X is formed of a molten ceramic such as alumina for the purpose of improving the resistance to plasma for a metal such as aluminum. The baffle 110 is a flat disc shape that can be horizontally arranged regardless of the direction of the magnetic field lines of the magnetic field at which it exists. However, the magnetic flux passing through the hole (through hole) 1 OXb to the magnetic field of the magnetic field at the position where the baffle 110 is present is actually formed at a right angle with respect to the front and back sides of the baffle 1 ox. Therefore, electrons spirally moving along the magnetic lines of force hardly pass through the through holes 1 OXb formed in the baffle plate, thereby improving the plasma blocking effect. Therefore, it is possible to prevent plasma discharge and abnormal discharge. Here, for example, the front and back surfaces of the baffle 10 X are set to have an angle of 45 to 80 degrees, for example. Further, according to the second embodiment, the baffle 10X does not need to be horizontal, and the magnetic field lines of the magnetic field passing through the hole (through hole) 1 OXb to the position where the baffle 10X exists are actually formed at a right angle obliquely. The shape of the gas passage hole OXb is not limited to a circular shape, but may be an elliptical shape, and 珂 (15) (15) 1337761 is a crack shape. The present invention is not limited to the above embodiment, and various modifications are possible. For example, the magnetic field forming means is not a dipole ring magnet, and a multi-pole ring magnet which forms a magnetic field around the wafer, i.e., the inner wall of the processing chamber, can be used. The first diagram system shows a horizontal sectional view of the multipole ring magnet 40. The multiple pole ring magnet 40 has a plurality of magnet pieces 4 2 arranged in a ring shape around the processing chamber 1 and in which the magnetic poles of N and S are alternately adjacent to each other (the direction of the magnetic poles is alternately reversed). The multipole ring magnet 40 forms a multipole magnetic field, and its magnetic flux density is about 0.02 to 0.2 T (20 〇 to 2000 Gauss) on the inner wall surface of the processing chamber 1, and 0.005 T (5 Gauss) at the center of the wafer W. ) Left and right. At this time, with the form shown in Fig. 7A, the baffles are arranged along the magnetic lines of force of the multiple pole magnetic fields formed around the wafer. Instead, according to the form shown in Fig. 9, the magnetic flux lines of the multipolar magnetic field are formed at a right angle to form a gas passage hole of the baffle. In the above embodiment, the processing chamber is formed in a cylindrical shape, and the mounting table is formed in a cylindrical shape, and the baffle is formed into a truncated conical shape or a flat circular plate shape. However, the baffles can be formed into various shapes suitable for the shape of the processing chamber and the mounting table. Further, in the above embodiment, the present invention has been described with respect to an example applied to a magnetron plasma etching apparatus. However, the invention is also applicable to other plasma treatments. That is, the magnetron plasma CVD apparatus can also be formed by changing the processing gas from the etching gas to a known CVD gas. Further, the magnetron plasma sputtering apparatus can be formed by arranging the targets face-to-face with the substrate to be processed in the processing chamber. Further, the substrate to be processed may not be a semiconductor wafer, or may be another substrate such as a substrate for a liquid crystal display (LCD). -19 - (16) (16) 1337761. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a cross-sectional view showing a magnetron RI E plasma etching apparatus including a dipole ring magnet according to a first embodiment of the present invention. Fig. 2 is a horizontal sectional view showing a dipole ring magnet of the apparatus of Fig. 1; Fig. 3 is a schematic view showing electric fields and magnetic fields formed in a processing chamber of the apparatus of Fig. 1; Fig. 4 is a perspective view showing a part of the baffle showing the apparatus of Fig. 1. Fig. 5 is a partial plan view showing the shutter of the apparatus of Fig. 1. Fig. 6 is a cross-sectional view showing, in an enlarged manner, a state in which the shutter of the apparatus of Fig. 1 is mounted. Fig. 7A is a schematic view showing the relationship between the baffle and the magnetic lines of force in the first embodiment. Figure 7B is a schematic view showing the relationship between a conventional baffle and magnetic lines of force.肇 Figure 8A is a diagram showing the relationship between the simulation results of the magnetic field direction and the conventional baffle. Fig. 8B is a view showing the relationship between the simulation result of the magnetic field direction and the baffle plate according to the first embodiment. Fig. 9 is a schematic view showing the relationship between the baffle and the magnetic lines of force in the magnetron RIE plasma etching apparatus according to the second embodiment of the present invention. Fig. 10 is a horizontal sectional view showing a multipole ring magnet. -20- (17) (17)1337761 [Description of the number] 1 : Processing chamber (processing container) 1 a : Upper part 1 b : Lower part 1 c : Mounting part 1 d : Notch part 2 : Mounting table 2 a : Core member 3: Insulating member 3a, 3b, 3c: member 4: support base 5: focus ring 6: electrostatic chuck 6a: electrode 7: ball screw 8: bellows 9 = bellows casing 1 〇: striker 1 Oa: body l 〇b _·Gas passage hole (through hole) l〇c : Outer mounting part l〇d : Inside mounting part 10e, 10f : Bolt insertion hole 1 0 C b : Through hole (18) (18)1337761 1 〇C : Baffle 10 b : Through hole 10X : baffle l〇Xb : through hole 1 1 : exhaust port 1 2 : exhaust system 1 3 : gate valve 1 5 : RF power supply φ 1 6 : DC power supply 17 : refrigerant chamber 1 7 a : refrigerant introduction pipe 1 7 b : refrigerant discharge pipe 1 8 : gas introduction mechanism 1 9 : gas supply line 2 0 : shower head 20a : gas guide part 2 1 : head space 2 2 : gas discharge hole 2 3 : Process gas supply system 2 3 a : Gas supply pipe 24 : Mounting member 2 5, 2 6 : Bolt 3 〇: Dipole ring magnet 3 1 : Anisotropic column magnet piece -22- (19) (19) 13377761 32: housing 3 5 : rotating machine Structure 4 0 : Multipole ring magnet 4 2 : Magnet piece W : Wafer B : Horizontal magnetic field 5 : Processing space E : R F electric field MFL : Magnetic field line