TWD195624S

TWD195624S - Part for semiconductor device

Info

Publication number: TWD195624S
Application number: TW107301729D01F
Authority: TW
Inventors: 坂本剛志
Original assignee: 日商濱松赫德尼古斯股份有限公司
Priority date: 2017-09-27
Filing date: 2018-03-27
Publication date: 2019-01-21
Also published as: JP1604002S; USD864883S1

Abstract

【物品用途】;本案設計之物品係使用於製造半導體元件之構件。製造本案設計之物品時，如「顯示生產過程之參考圖1」所示，藉由將雷射光聚光於晶圓內部，而於晶圓內部形成脆弱且容易蝕刻處理及切斷之改質區域部。然後，如「顯示生產過程之參考圖2」所示，藉由蝕刻處理，沿改質區域部形成V字狀之槽部。最後，如「顯示生產過程之參考圖3」所示，藉由擴大般拉伸而沿改質區域部切斷晶圓，製造複數個本案設計之物品。本案設計之物品之大小，於「前視圖」中為縱向90 μm、橫向100 μm。於通常之交易中，附上本案設計之物品之放大照及放大圖等而進行交易。;【設計說明】;圖式所揭露之虛線部分，為本案不主張設計之部分。於「顯示申請部分之參考立體圖」中，著色為紅色部分以外之部分為本案不主張設計之部分。本案設計係新穎獨特之樣式，藉由獨特地設計半導體元件用構件，可顯現出先前技藝所未有之視覺效果。[Use of article]; The article designed in this case is a component used in the manufacture of semiconductor components. When manufacturing the object designed in this project, as shown in "Reference Figure 1 showing the production process", by focusing the laser light on the inside of the wafer, a modified area that is fragile and easy to be etched and cut is formed inside the wafer. department. Then, as shown in "Reference Figure 2 showing the production process", a V-shaped groove portion is formed along the modified region by etching. Finally, as shown in "Reference Figure 3 showing the production process", the wafer is cut along the modified area by enlarged stretching to manufacture a plurality of items designed in this case. The size of the object designed in this project is 90 μm in the vertical direction and 100 μm in the horizontal direction in the "front view". In normal transactions, enlarged photos and enlarged drawings of the items designed in this case are attached for transaction. ;[Design Description];The dotted line portion disclosed in the drawing is the part of this case that does not require design. In the "reference three-dimensional drawing showing the application part", the parts other than the parts colored in red are the parts for which the design is not claimed in this case. The design of this case is a novel and unique style. By uniquely designing the components for semiconductor components, it can show visual effects that were unprecedented in previous techniques.

Description

Member for semiconductor component

本案設計之物品係使用於製造半導體元件之構件。製造本案設計之物品時，如「顯示生產過程之參考圖1」所示，藉由將雷射光聚光於晶圓內部，而於晶圓內部形成脆弱且容易蝕刻處理及切斷之改質區域部。然後，如「顯示生產過程之參考圖2」所示，藉由蝕刻處理，沿改質區域部形成V字狀之槽部。最後，如「顯示生產過程之參考圖3」所示，藉由擴大般拉伸而沿改質區域部切斷晶圓，製造複數個本案設計之物品。本案設計之物品之大小，於「前視圖」中為縱向90 μm、橫向100 μm。於通常之交易中，附上本案設計之物品之放大照及放大圖等而進行交易。The articles designed in this case are used for manufacturing components of semiconductor components. When manufacturing the article designed in this case, as shown in "Display Production Process Refer to Figure 1", by concentrating the laser light inside the wafer, a modified region which is fragile and easy to be etched and cut is formed inside the wafer. unit. Then, as shown in "Refer to FIG. 2 of the display production process", a V-shaped groove portion is formed along the modified region portion by an etching process. Finally, as shown in "Reference Diagram 3 of the display production process", the wafer is cut along the modified region portion by expanding the stretching, and a plurality of articles of the present design are manufactured. The size of the item designed in this case is 90 μm in the longitudinal direction and 100 μm in the lateral direction in the “front view”. In the usual transaction, the transaction is carried out by attaching magnified photos and enlarged views of the items designed in this case.

圖式所揭露之虛線部分，為本案不主張設計之部分。於「顯示申請部分之參考立體圖」中，著色為紅色部分以外之部分為本案不主張設計之部分。本案設計係新穎獨特之樣式，藉由獨特地設計半導體元件用構件，可顯現出先前技藝所未有之視覺效果。The dotted line section disclosed in the figure is not part of the design of this case. In the "Reference perspective view showing the application part", the part other than the red part is not part of the design of the case. The design of this case is a novel and unique style, and by uniquely designing components for semiconductor components, visual effects not previously available can be exhibited.