TW594041B - Antireflection substrate in ultraviolet and vacuum ultraviolet region - Google Patents
Antireflection substrate in ultraviolet and vacuum ultraviolet region Download PDFInfo
- Publication number
- TW594041B TW594041B TW089123296A TW89123296A TW594041B TW 594041 B TW594041 B TW 594041B TW 089123296 A TW089123296 A TW 089123296A TW 89123296 A TW89123296 A TW 89123296A TW 594041 B TW594041 B TW 594041B
- Authority
- TW
- Taiwan
- Prior art keywords
- substrate
- ultraviolet
- antireflection
- vacuum ultraviolet
- vacuum
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/62—Pellicles, e.g. pellicle assemblies, e.g. having membrane on support frame; Preparation thereof
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
- G02B1/10—Optical coatings produced by application to, or surface treatment of, optical elements
- G02B1/11—Anti-reflection coatings
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
- G02B1/10—Optical coatings produced by application to, or surface treatment of, optical elements
- G02B1/11—Anti-reflection coatings
- G02B1/113—Anti-reflection coatings using inorganic layer materials only
- G02B1/115—Multilayers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
- G03F1/46—Antireflective coatings
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/7095—Materials, e.g. materials for housing, stage or other support having particular properties, e.g. weight, strength, conductivity, thermal expansion coefficient
- G03F7/70958—Optical materials or coatings, e.g. with particular transmittance, reflectance or anti-reflection properties
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70983—Optical system protection, e.g. pellicles or removable covers for protection of mask
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Epidemiology (AREA)
- Engineering & Computer Science (AREA)
- Environmental & Geological Engineering (AREA)
- Health & Medical Sciences (AREA)
- Public Health (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Surface Treatment Of Optical Elements (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Laminated Bodies (AREA)
- Surface Treatment Of Glass (AREA)
Description
594041 Α8 Β8 C8 D8 六、申請專利範圍 真空紫外線區域之抗反射基體,其中前述基體之厚度爲 100/zm 至 500#m。 (請先聞讀背面之注意事項再填寫本頁) 6 ·如申請專利範圍第5項之紫外線及真空紫外線區 域之抗反射基體,其中與前述抗反射膜之基體連接的層爲 由氟化物所構成的層。 7 .如申請專利範圍第1〜3項中任一項之紫外線及 真空紫外線區域之抗反射基體,其中前述中心波長λ Q爲在 1 5 0 nm至2 0 0 nm之任一個波長。 8 ·如申請專利範圍第7項之紫外線及真空紫外線區 域之抗反射基體,其中前述中心波長係1 5 7 nm或 1 9 3 n m 〇 9 ·如申請專利範圍第1〜3項中任一項之紫外線及 真空紫外線區域之抗反射基體,其中在波長6 3 2 . 8 nm附近之反射率爲3.5%以下。 經濟部智慧財產局員工消費合作社印製 1 0 .如申請專利範圍第1〜3項中任一項之紫外線 及真空紫外線區域之抗反射基體,其中對於與前述中心波 長λ 〇相同波長之光之透光率之最大値與最小値之差爲1 % 以下。 1 1 · 一種半導體製造裝置用光學構件,係由如申請 專利範圍第1項至第10項中任一項之抗反射基體而成。 1 2 . —種低反射薄膜用基體,係由如申請專利範圍 第1項至第10項中任一項之抗反射基體而成。 3 本紙張尺度逋用中國國家揉準(CNS ) Α4規格(210X297公釐)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP31537699 | 1999-11-05 |
Publications (1)
Publication Number | Publication Date |
---|---|
TW594041B true TW594041B (en) | 2004-06-21 |
Family
ID=18064673
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW089123296A TW594041B (en) | 1999-11-05 | 2000-11-04 | Antireflection substrate in ultraviolet and vacuum ultraviolet region |
Country Status (5)
Country | Link |
---|---|
US (2) | US6628456B2 (zh) |
EP (1) | EP1227344A4 (zh) |
KR (1) | KR100709045B1 (zh) |
TW (1) | TW594041B (zh) |
WO (1) | WO2001035125A1 (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI800421B (zh) * | 2022-06-30 | 2023-04-21 | 吳鳳學校財團法人吳鳳科技大學 | 可擴充帶寬的組合式帶通濾光片組 |
Families Citing this family (26)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1227344A4 (en) | 1999-11-05 | 2005-08-31 | Asahi Glass Co Ltd | ANTI-REFLECTION BASE FOR UV AND VACUUM UV AREAS |
DE10064143A1 (de) | 2000-12-15 | 2002-06-20 | Zeiss Carl | Reflexionsminderungsbeschichtung für Ultraviolettlicht bei großen Einfallswinkeln |
EP1394572B1 (en) | 2001-05-09 | 2010-04-21 | Hamamatsu Photonics K.K. | Method of producing optical lens, and optical lens |
CN100385261C (zh) | 2001-05-09 | 2008-04-30 | 浜松光子学株式会社 | 光学透镜的制造方法 |
JP3711063B2 (ja) * | 2001-11-08 | 2005-10-26 | 大日本印刷株式会社 | 防塵装置付きフォトマスク及びこれを用いた露光方法 |
JP4423119B2 (ja) * | 2004-06-16 | 2010-03-03 | キヤノン株式会社 | 反射防止膜及びそれを用いた光学素子 |
US7713632B2 (en) | 2004-07-12 | 2010-05-11 | Cardinal Cg Company | Low-maintenance coatings |
US7923114B2 (en) | 2004-12-03 | 2011-04-12 | Cardinal Cg Company | Hydrophilic coatings, methods for depositing hydrophilic coatings, and improved deposition technology for thin films |
US8092660B2 (en) | 2004-12-03 | 2012-01-10 | Cardinal Cg Company | Methods and equipment for depositing hydrophilic coatings, and deposition technologies for thin films |
US20060204766A1 (en) * | 2005-03-14 | 2006-09-14 | Jds Uniphase Corporation | Anti-moisture and soil-repellent coatings |
DE102005041938A1 (de) * | 2005-09-03 | 2007-03-08 | Carl Zeiss Smt Ag | Mikrolithographische Projektionsbelichtungsanlage |
JP5129975B2 (ja) | 2006-04-11 | 2013-01-30 | 日本板硝子株式会社 | 向上した低保守特性を有する光触媒コーティング |
US7989094B2 (en) | 2006-04-19 | 2011-08-02 | Cardinal Cg Company | Opposed functional coatings having comparable single surface reflectances |
US20080011599A1 (en) | 2006-07-12 | 2008-01-17 | Brabender Dennis M | Sputtering apparatus including novel target mounting and/or control |
US7929115B2 (en) * | 2007-06-01 | 2011-04-19 | Carl Zeiss Smt Gmbh | Projection objective and projection exposure apparatus for microlithography |
EP2066594B1 (en) | 2007-09-14 | 2016-12-07 | Cardinal CG Company | Low-maintenance coatings, and methods for producing low-maintenance coatings |
US8830141B2 (en) * | 2009-04-02 | 2014-09-09 | GM Global Technology Operations LLC | Full-windshield head-up display enhancement: anti-reflective glass hard coat |
KR101628367B1 (ko) * | 2009-08-12 | 2016-06-08 | 엘지이노텍 주식회사 | 펠리 클 막 |
US9693799B2 (en) | 2009-09-17 | 2017-07-04 | Pilofocus, Inc. | System and method for aligning hair follicle |
WO2011035125A1 (en) | 2009-09-17 | 2011-03-24 | Wesley Carlos K | Hair restoration surgery |
US9314082B2 (en) | 2009-09-17 | 2016-04-19 | Pilofocus, Inc. | System and method for extraction of hair follicle |
SG11201402357TA (en) * | 2011-10-17 | 2014-08-28 | Carlos K Wesley | Hair restoration |
CN105268110B (zh) * | 2014-06-19 | 2018-03-13 | 昆山科技大学 | 黄疸光疗装置 |
DE102015100091A1 (de) * | 2015-01-07 | 2016-07-07 | Rodenstock Gmbh | Schichtsystem und optisches Element mit einem Schichtsystem |
JP6789972B2 (ja) | 2015-11-27 | 2020-11-25 | Hoya株式会社 | マスクブランク用基板、多層反射膜付き基板、反射型マスクブランク及び反射型マスク、並びに半導体装置の製造方法 |
WO2018093985A1 (en) | 2016-11-17 | 2018-05-24 | Cardinal Cg Company | Static-dissipative coating technology |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6177002A (ja) * | 1984-09-25 | 1986-04-19 | Canon Inc | 光反射防止膜 |
JPS6177003A (ja) * | 1984-09-25 | 1986-04-19 | Canon Inc | 光反射防止膜 |
JPH077124B2 (ja) * | 1986-10-31 | 1995-01-30 | キヤノン株式会社 | 反射防止膜 |
JPS63142302A (ja) * | 1986-12-04 | 1988-06-14 | Nikon Corp | レ−ザ−耐力の高い光学薄膜 |
CA2005096C (en) * | 1988-12-13 | 1999-03-23 | Tokinori Agou | High light-transmissive dust-proof body and method of preparing same |
JPH05188203A (ja) * | 1992-01-10 | 1993-07-30 | Matsushita Giken Kk | CaF2基板用反射防止膜 |
JP3924806B2 (ja) * | 1996-06-10 | 2007-06-06 | 株式会社ニコン | 反射防止膜 |
JPH11248903A (ja) * | 1998-03-03 | 1999-09-17 | Nikon Corp | 反射防止膜 |
EP1227344A4 (en) | 1999-11-05 | 2005-08-31 | Asahi Glass Co Ltd | ANTI-REFLECTION BASE FOR UV AND VACUUM UV AREAS |
-
2000
- 2000-11-02 EP EP00971745A patent/EP1227344A4/en not_active Withdrawn
- 2000-11-02 WO PCT/JP2000/007724 patent/WO2001035125A1/ja not_active Application Discontinuation
- 2000-11-02 KR KR1020027005669A patent/KR100709045B1/ko not_active IP Right Cessation
- 2000-11-04 TW TW089123296A patent/TW594041B/zh not_active IP Right Cessation
-
2002
- 2002-05-06 US US10/138,558 patent/US6628456B2/en not_active Expired - Fee Related
-
2003
- 2003-06-09 US US10/456,688 patent/US6829084B2/en not_active Expired - Fee Related
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI800421B (zh) * | 2022-06-30 | 2023-04-21 | 吳鳳學校財團法人吳鳳科技大學 | 可擴充帶寬的組合式帶通濾光片組 |
Also Published As
Publication number | Publication date |
---|---|
WO2001035125A1 (fr) | 2001-05-17 |
US6829084B2 (en) | 2004-12-07 |
KR100709045B1 (ko) | 2007-04-18 |
EP1227344A1 (en) | 2002-07-31 |
US20030025991A1 (en) | 2003-02-06 |
US6628456B2 (en) | 2003-09-30 |
EP1227344A4 (en) | 2005-08-31 |
KR20020060725A (ko) | 2002-07-18 |
US20030214704A1 (en) | 2003-11-20 |
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Legal Events
Date | Code | Title | Description |
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MM4A | Annulment or lapse of patent due to non-payment of fees |