TW586339B - Micro electro-mechanical system method - Google Patents
Micro electro-mechanical system method Download PDFInfo
- Publication number
- TW586339B TW586339B TW092107385A TW92107385A TW586339B TW 586339 B TW586339 B TW 586339B TW 092107385 A TW092107385 A TW 092107385A TW 92107385 A TW92107385 A TW 92107385A TW 586339 B TW586339 B TW 586339B
- Authority
- TW
- Taiwan
- Prior art keywords
- conductive
- cantilever beam
- cantilever
- forming
- circuit board
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims description 49
- 239000004020 conductor Substances 0.000 claims abstract description 33
- 239000002861 polymer material Substances 0.000 claims abstract description 29
- 229920000642 polymer Polymers 0.000 claims description 29
- 239000000463 material Substances 0.000 claims description 16
- 239000002131 composite material Substances 0.000 claims description 4
- 239000011248 coating agent Substances 0.000 claims description 2
- 238000000576 coating method Methods 0.000 claims description 2
- 239000002184 metal Substances 0.000 claims 25
- 238000000151 deposition Methods 0.000 claims 3
- 238000005530 etching Methods 0.000 claims 2
- 238000004898 kneading Methods 0.000 claims 1
- 238000006116 polymerization reaction Methods 0.000 claims 1
- 238000005516 engineering process Methods 0.000 abstract description 10
- 239000003990 capacitor Substances 0.000 description 20
- 239000012212 insulator Substances 0.000 description 10
- 229920005989 resin Polymers 0.000 description 7
- 239000011347 resin Substances 0.000 description 7
- 238000003384 imaging method Methods 0.000 description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 238000003475 lamination Methods 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 239000004642 Polyimide Substances 0.000 description 2
- 239000004809 Teflon Substances 0.000 description 2
- 229920006362 Teflon® Polymers 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 239000012811 non-conductive material Substances 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 229920001940 conductive polymer Polymers 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000011889 copper foil Substances 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 239000003365 glass fiber Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- ZFSLODLOARCGLH-UHFFFAOYSA-N isocyanuric acid Chemical compound OC1=NC(O)=NC(O)=N1 ZFSLODLOARCGLH-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 150000002926 oxygen Chemical class 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H59/00—Electrostatic relays; Electro-adhesion relays
- H01H59/0009—Electrostatic relays; Electro-adhesion relays making use of micromechanics
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G5/00—Capacitors in which the capacitance is varied by mechanical means, e.g. by turning a shaft; Processes of their manufacture
- H01G5/16—Capacitors in which the capacitance is varied by mechanical means, e.g. by turning a shaft; Processes of their manufacture using variation of distance between electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H1/00—Contacts
- H01H1/0036—Switches making use of microelectromechanical systems [MEMS]
- H01H2001/0073—Solutions for avoiding the use of expensive silicon technologies in micromechanical switches
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H59/00—Electrostatic relays; Electro-adhesion relays
- H01H59/0009—Electrostatic relays; Electro-adhesion relays making use of micromechanics
- H01H2059/0054—Rocking contacts or actuating members
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Micromachines (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/133,913 US6714105B2 (en) | 2002-04-26 | 2002-04-26 | Micro electro-mechanical system method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200308190A TW200308190A (en) | 2003-12-16 |
| TW586339B true TW586339B (en) | 2004-05-01 |
Family
ID=29249098
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW092107385A TW586339B (en) | 2002-04-26 | 2003-04-01 | Micro electro-mechanical system method |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US6714105B2 (enExample) |
| EP (1) | EP1502282A4 (enExample) |
| JP (1) | JP2005523823A (enExample) |
| CN (1) | CN1326200C (enExample) |
| AU (1) | AU2003224701A1 (enExample) |
| TW (1) | TW586339B (enExample) |
| WO (1) | WO2003092048A2 (enExample) |
Families Citing this family (28)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6972882B2 (en) * | 2002-04-30 | 2005-12-06 | Hewlett-Packard Development Company, L.P. | Micro-mirror device with light angle amplification |
| US20030202264A1 (en) * | 2002-04-30 | 2003-10-30 | Weber Timothy L. | Micro-mirror device |
| EP1394555B1 (en) * | 2002-08-30 | 2012-04-25 | STMicroelectronics S.r.l. | Threshold acceleration sensor |
| ATE434839T1 (de) * | 2002-12-13 | 2009-07-15 | Wispry Inc | Varactorvorrichtungen und verfahren |
| KR100513696B1 (ko) * | 2003-06-10 | 2005-09-09 | 삼성전자주식회사 | 시이소오형 ｒｆ용 ｍｅｍｓ 스위치 및 그 제조방법 |
| JP2005099678A (ja) * | 2003-08-20 | 2005-04-14 | Olympus Corp | 光遮断装置および光スイッチ装置 |
| JP4109182B2 (ja) * | 2003-11-10 | 2008-07-02 | 株式会社日立メディアエレクトロニクス | 高周波ｍｅｍｓスイッチ |
| US20050134141A1 (en) | 2003-12-23 | 2005-06-23 | Jovica Savic | Meso-microelectromechanical system having a glass beam and method for its fabrication |
| EP1585219A1 (en) * | 2004-04-06 | 2005-10-12 | Seiko Epson Corporation | A micro-flap type nano/micro mechanical device and fabrication method thereof |
| US7602261B2 (en) * | 2005-12-22 | 2009-10-13 | Intel Corporation | Micro-electromechanical system (MEMS) switch |
| WO2007072407A2 (en) * | 2005-12-22 | 2007-06-28 | Nxp B.V. | Arrangement of mems devices having series coupled capacitors |
| US7463113B2 (en) * | 2006-02-28 | 2008-12-09 | Motorla, Inc. | Apparatus and methods relating to electrically conductive path interfaces disposed within capacitor plate openings |
| US7554421B2 (en) * | 2006-05-16 | 2009-06-30 | Intel Corporation | Micro-electromechanical system (MEMS) trampoline switch/varactor |
| US7605675B2 (en) * | 2006-06-20 | 2009-10-20 | Intel Corporation | Electromechanical switch with partially rigidified electrode |
| US20080029372A1 (en) * | 2006-08-01 | 2008-02-07 | Timothy Beerling | Microfluidic switching devices having reduced control inputs |
| JP4247254B2 (ja) * | 2006-08-08 | 2009-04-02 | マイクロプレシジョン株式会社 | 電磁駆動型光偏向素子 |
| US7782594B2 (en) * | 2006-08-18 | 2010-08-24 | Imec | MEMS variable capacitor and method for producing the same |
| US7583169B1 (en) | 2007-03-22 | 2009-09-01 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | MEMS switches having non-metallic crossbeams |
| US7499257B2 (en) * | 2007-06-22 | 2009-03-03 | Motorola, Inc. | Micro-electro-mechanical system varactor |
| US7830003B2 (en) * | 2007-12-27 | 2010-11-09 | Honeywell International, Inc. | Mechanical isolation for MEMS devices |
| EP2345052A2 (en) * | 2008-10-01 | 2011-07-20 | Joseph F. Pinkerton | Nanoelectromechanical tunneling current switch |
| JP4816762B2 (ja) * | 2009-05-20 | 2011-11-16 | オムロン株式会社 | バネの構造および当該バネを用いたアクチュエータ |
| TWI444323B (zh) | 2010-02-03 | 2014-07-11 | Prime View Int Co Ltd | 驅動元件及驅動元件陣列排列 |
| US8581679B2 (en) * | 2010-02-26 | 2013-11-12 | Stmicroelectronics Asia Pacific Pte. Ltd. | Switch with increased magnetic sensitivity |
| CN102211752A (zh) * | 2010-04-08 | 2011-10-12 | 元太科技工业股份有限公司 | 驱动元件、驱动元件阵列模组及其结构 |
| US8635765B2 (en) | 2011-06-15 | 2014-01-28 | International Business Machines Corporation | Method of forming micro-electrical-mechanical structure (MEMS) |
| CN102486972B (zh) * | 2011-09-01 | 2014-10-22 | 中国科学院上海微系统与信息技术研究所 | 双通道射频mems开关及其制造方法 |
| CN106904565B (zh) * | 2015-12-22 | 2019-06-28 | 中芯国际集成电路制造(上海)有限公司 | 一种mems器件及其制备方法、电子装置 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5619061A (en) * | 1993-07-27 | 1997-04-08 | Texas Instruments Incorporated | Micromechanical microwave switching |
| US5638946A (en) * | 1996-01-11 | 1997-06-17 | Northeastern University | Micromechanical switch with insulated switch contact |
| JP4089803B2 (ja) * | 1998-01-12 | 2008-05-28 | Ｔｄｋ株式会社 | 静電リレー |
| US6188301B1 (en) * | 1998-11-13 | 2001-02-13 | General Electric Company | Switching structure and method of fabrication |
| JP2000188049A (ja) * | 1998-12-22 | 2000-07-04 | Nec Corp | マイクロマシンスイッチおよびその製造方法 |
| US6410360B1 (en) * | 1999-01-26 | 2002-06-25 | Teledyne Industries, Inc. | Laminate-based apparatus and method of fabrication |
| US6307452B1 (en) * | 1999-09-16 | 2001-10-23 | Motorola, Inc. | Folded spring based micro electromechanical (MEM) RF switch |
-
2002
- 2002-04-26 US US10/133,913 patent/US6714105B2/en not_active Expired - Fee Related
-
2003
- 2003-03-17 EP EP03721384A patent/EP1502282A4/en not_active Withdrawn
- 2003-03-17 WO PCT/US2003/008255 patent/WO2003092048A2/en not_active Ceased
- 2003-03-17 CN CNB038119358A patent/CN1326200C/zh not_active Expired - Fee Related
- 2003-03-17 AU AU2003224701A patent/AU2003224701A1/en not_active Abandoned
- 2003-03-17 JP JP2004500321A patent/JP2005523823A/ja active Pending
- 2003-04-01 TW TW092107385A patent/TW586339B/zh not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| CN1656643A (zh) | 2005-08-17 |
| EP1502282A2 (en) | 2005-02-02 |
| WO2003092048A3 (en) | 2004-01-22 |
| WO2003092048B1 (en) | 2004-10-07 |
| EP1502282A4 (en) | 2007-06-13 |
| TW200308190A (en) | 2003-12-16 |
| WO2003092048A2 (en) | 2003-11-06 |
| AU2003224701A1 (en) | 2003-11-10 |
| AU2003224701A8 (en) | 2003-11-10 |
| JP2005523823A (ja) | 2005-08-11 |
| US20030201852A1 (en) | 2003-10-30 |
| CN1326200C (zh) | 2007-07-11 |
| US6714105B2 (en) | 2004-03-30 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |