TW581935B - Photoacid generators in photoresist compositions for microlithography - Google Patents

Photoacid generators in photoresist compositions for microlithography Download PDF

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Publication number
TW581935B
TW581935B TW090127881A TW90127881A TW581935B TW 581935 B TW581935 B TW 581935B TW 090127881 A TW090127881 A TW 090127881A TW 90127881 A TW90127881 A TW 90127881A TW 581935 B TW581935 B TW 581935B
Authority
TW
Taiwan
Prior art keywords
salt
group
integer
photoresist composition
item
Prior art date
Application number
TW090127881A
Other languages
English (en)
Chinese (zh)
Inventor
Viacheslav Alexandrovic Petrov
Frank L Schadt Iii
Original Assignee
Du Pont
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Du Pont filed Critical Du Pont
Application granted granted Critical
Publication of TW581935B publication Critical patent/TW581935B/zh

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0395—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having a backbone with alicyclic moieties
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0382—Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
TW090127881A 2000-11-09 2001-11-09 Photoacid generators in photoresist compositions for microlithography TW581935B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US24739300P 2000-11-09 2000-11-09

Publications (1)

Publication Number Publication Date
TW581935B true TW581935B (en) 2004-04-01

Family

ID=22934752

Family Applications (1)

Application Number Title Priority Date Filing Date
TW090127881A TW581935B (en) 2000-11-09 2001-11-09 Photoacid generators in photoresist compositions for microlithography

Country Status (7)

Country Link
EP (1) EP1332406A2 (de)
JP (1) JP2004537740A (de)
KR (1) KR20040004429A (de)
CN (1) CN1575438A (de)
AU (1) AU2002229010A1 (de)
TW (1) TW581935B (de)
WO (1) WO2002039186A2 (de)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7521168B2 (en) * 2002-02-13 2009-04-21 Fujifilm Corporation Resist composition for electron beam, EUV or X-ray
JP4701231B2 (ja) * 2002-02-13 2011-06-15 富士フイルム株式会社 電子線、ｅｕｖ又はｘ線用ネガ型レジスト組成物及びそれを用いたパターン形成方法
US20040265733A1 (en) * 2003-06-30 2004-12-30 Houlihan Francis M. Photoacid generators
JP4411042B2 (ja) 2003-09-19 2010-02-10 富士フイルム株式会社 ポジ型レジスト組成物及びそれを用いたパターン形成方法
US20050148679A1 (en) * 2003-12-29 2005-07-07 Chingfan Chiu Aryl sulfonium salt, polymerizable composition and polymerization method of the same
KR100574495B1 (ko) * 2004-12-15 2006-04-27 주식회사 하이닉스반도체 광산발생제 중합체, 그 제조방법 및 이를 함유하는상부반사방지막 조성물
JP2010134126A (ja) * 2008-12-03 2010-06-17 Jsr Corp 感放射線性組樹脂組成物

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1994010608A1 (en) * 1992-10-29 1994-05-11 International Business Machines Corporation Chemically amplified photoresist
US5863699A (en) * 1995-10-12 1999-01-26 Kabushiki Kaisha Toshiba Photo-sensitive composition
CN1253759C (zh) * 1998-09-23 2006-04-26 纳幕尔杜邦公司 微石印用光致抗蚀剂、聚合物和工艺
WO2000067072A1 (en) * 1999-05-04 2000-11-09 E.I. Du Pont De Nemours And Company Fluorinated polymers, photoresists and processes for microlithography
JP2001255647A (ja) * 2000-03-13 2001-09-21 Daikin Ind Ltd エネルギー線照射によりカチオンまたは酸を発生するフルオロアルキルオニウム塩型のカチオンまたは酸発生剤

Also Published As

Publication number Publication date
WO2002039186A2 (en) 2002-05-16
CN1575438A (zh) 2005-02-02
EP1332406A2 (de) 2003-08-06
JP2004537740A (ja) 2004-12-16
WO2002039186A3 (en) 2002-11-21
AU2002229010A1 (en) 2002-05-21
KR20040004429A (ko) 2004-01-13

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