TW573315B - Optical system and exposure apparatus provided with the optical system - Google Patents
Optical system and exposure apparatus provided with the optical system Download PDFInfo
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- TW573315B TW573315B TW91111295A TW91111295A TW573315B TW 573315 B TW573315 B TW 573315B TW 91111295 A TW91111295 A TW 91111295A TW 91111295 A TW91111295 A TW 91111295A TW 573315 B TW573315 B TW 573315B
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- 230000003287 optical effect Effects 0.000 title claims description 304
- 239000013078 crystal Substances 0.000 claims description 249
- 238000000034 method Methods 0.000 claims description 68
- 230000005855 radiation Effects 0.000 claims description 64
- WUKWITHWXAAZEY-UHFFFAOYSA-L calcium difluoride Chemical compound [F-].[F-].[Ca+2] WUKWITHWXAAZEY-UHFFFAOYSA-L 0.000 claims description 23
- 239000010436 fluorite Substances 0.000 claims description 20
- 239000000758 substrate Substances 0.000 claims description 20
- 238000005286 illumination Methods 0.000 claims description 12
- 238000000605 extraction Methods 0.000 claims description 3
- 230000001678 irradiating effect Effects 0.000 claims description 2
- 206010034972 Photosensitivity reaction Diseases 0.000 claims 1
- 230000036211 photosensitivity Effects 0.000 claims 1
- 230000000694 effects Effects 0.000 description 35
- 235000012431 wafers Nutrition 0.000 description 27
- 238000009826 distribution Methods 0.000 description 20
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 12
- 238000003384 imaging method Methods 0.000 description 12
- 239000004973 liquid crystal related substance Substances 0.000 description 12
- 239000000463 material Substances 0.000 description 10
- 239000004065 semiconductor Substances 0.000 description 9
- 238000010586 diagram Methods 0.000 description 7
- 239000011261 inert gas Substances 0.000 description 6
- 229910052757 nitrogen Inorganic materials 0.000 description 6
- 230000010287 polarization Effects 0.000 description 6
- 239000010408 film Substances 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- PQXKHYXIUOZZFA-UHFFFAOYSA-M lithium fluoride Chemical compound [Li+].[F-] PQXKHYXIUOZZFA-UHFFFAOYSA-M 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 229910001634 calcium fluoride Inorganic materials 0.000 description 3
- 125000004122 cyclic group Chemical group 0.000 description 3
- 238000011161 development Methods 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- OYLGJCQECKOTOL-UHFFFAOYSA-L barium fluoride Chemical compound [F-].[F-].[Ba+2] OYLGJCQECKOTOL-UHFFFAOYSA-L 0.000 description 2
- 229910001632 barium fluoride Inorganic materials 0.000 description 2
- JZKFIPKXQBZXMW-UHFFFAOYSA-L beryllium difluoride Chemical compound F[Be]F JZKFIPKXQBZXMW-UHFFFAOYSA-L 0.000 description 2
- 229910001633 beryllium fluoride Inorganic materials 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 210000004027 cell Anatomy 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 238000012937 correction Methods 0.000 description 2
- 210000002858 crystal cell Anatomy 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000001307 helium Substances 0.000 description 2
- 229910052734 helium Inorganic materials 0.000 description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 210000001747 pupil Anatomy 0.000 description 2
- PUZPDOWCWNUUKD-UHFFFAOYSA-M sodium fluoride Chemical compound [F-].[Na+] PUZPDOWCWNUUKD-UHFFFAOYSA-M 0.000 description 2
- 206010010071 Coma Diseases 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 1
- 235000010627 Phaseolus vulgaris Nutrition 0.000 description 1
- 244000046052 Phaseolus vulgaris Species 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 230000001154 acute effect Effects 0.000 description 1
- 230000033228 biological regulation Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 239000002178 crystalline material Substances 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 210000002745 epiphysis Anatomy 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 210000003128 head Anatomy 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 230000000116 mitigating effect Effects 0.000 description 1
- 239000005304 optical glass Substances 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 235000013024 sodium fluoride Nutrition 0.000 description 1
- 239000011775 sodium fluoride Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
- G03F7/70566—Polarisation control
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
- G02B1/02—Optical elements characterised by the material of which they are made; Optical coatings for optical elements made of crystals, e.g. rock-salt, semi-conductors
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B13/00—Optical objectives specially designed for the purposes specified below
- G02B13/14—Optical objectives specially designed for the purposes specified below for use with infrared or ultraviolet radiation
- G02B13/143—Optical objectives specially designed for the purposes specified below for use with infrared or ultraviolet radiation for use with ultraviolet radiation
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/30—Polarising elements
- G02B5/3083—Birefringent or phase retarding elements
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/7095—Materials, e.g. materials for housing, stage or other support having particular properties, e.g. weight, strength, conductivity, thermal expansion coefficient
- G03F7/70958—Optical materials or coatings, e.g. with particular transmittance, reflectance or anti-reflection properties
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/7095—Materials, e.g. materials for housing, stage or other support having particular properties, e.g. weight, strength, conductivity, thermal expansion coefficient
- G03F7/70958—Optical materials or coatings, e.g. with particular transmittance, reflectance or anti-reflection properties
- G03F7/70966—Birefringence
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Health & Medical Sciences (AREA)
- Engineering & Computer Science (AREA)
- Environmental & Geological Engineering (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Toxicology (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Lenses (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Description
[發明領域] 本务明涉及-種光學系統和具有該光學系統的曝光裝 置，更特言之，涉及一種投射光學系統，該系統適用於— 曝光裝置，當使用微影蝕刻法處理製造例如像半導體裝置 的微裝置的時候使用。 [相關技藝說明] 近年來，在製造半導體裝置或製造半導體晶片的包裝基 板時，產生更精細的線寬方面有長足的進步，而且對於形 成圖案的曝光裝置，則需要有更佳解析度的投射光學系 統。為了要滿足對較高解析度的需求，必須縮短該曝光光 、’泉波長，同時擴大投射光學系統的N a (數值孔徑）。但 是，當曝光光線的波長變短時，可實行的光學玻璃類型就 有所限制’因為光線會被吸收。 例如，當在真空紫外光區中、波長2〇〇 nm或以下的光 線，特別是F2雷射光（157 nm波長），用來當作曝光光線使 用時，必須大量使用如氟化鈣（螢石·· CaF2)或氟化鋇 (BaF2)等氟化物晶體來作為可構成投射光學系統的幅射傳 導光學材料。事實上，已有一種設計，係專為在使用h雷 射光作為曝光光線的曝光裝置中，製造一種僅採用螢石的 投射光學系統所設計的。螢石是一種立方體系統，具有光 學等向性，且實際上沒有雙折射。除此之外，在傳統的可 見光線範圍的實驗中，僅在螢石中發現小的雙折射（内部 應力所導致的無規則現象）。 [本發明可克服的問題] 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公爱) 573315 A7[Field of the Invention] The present invention relates to an optical system and an exposure device having the same, and more particularly, to a projection optical system suitable for an exposure device. Used as a micro device for semiconductor devices. [Relevant technical description] In recent years, when manufacturing semiconductor devices or packaging substrates for semiconductor wafers, there has been considerable progress in producing finer line widths, and for patterning exposure devices, projections with better resolution have been required. Optical system. In order to meet the demand for higher resolution, it is necessary to shorten the exposure light wavelength and the spring wavelength and to increase the N a (numerical aperture) of the projection optical system. However, when the wavelength of the exposure light becomes shorter, the type of optical glass that can be implemented is limited 'because the light will be absorbed. For example, when light with a wavelength of 200 nm or below, especially F2 laser light (157 nm), is used as exposure light in the vacuum ultraviolet region, a large amount of calcium fluoride (fluorite) must be used. ····································． In fact, there has been a design designed to manufacture a projection optical system using only fluorite in an exposure device using h laser light as an exposure light. Fluorite is a cubic system that is optically isotropic and has virtually no birefringence. In addition, in traditional experiments with visible light range, only small birefringence (random phenomena due to internal stress) was found in fluorite. [Problems which can be overcome by the present invention] This paper size is applicable to Chinese National Standard (CNS) A4 specification (210X297 public love) 573315 A7
五、發明説明（3 ) 效果至某種程度，如上所述，卻無法確實地校正與此方向 相反的雙折射效果。結果，校正效果並不足夠。 在考慮則述問題後，本發明的目的是提供一種具有良好 光學效果的光學系統，即使使用本質上具有雙折射的光學 材料’例如像螢石’實際上也不接受雙折射的效果，以及 才疋供一種配備該光學系統的曝光裝置。 [問題解決裝置] 為了要解決上述問題，本發明的第—觀點，提供一種光 子系統’具有至少一幅射傳導構件，具有以下特徵··有效 地^許 nm或以下波長的光線通過’其中該光軸實質上 相等於一晶軸[100]，或在光學上等於該晶軸[1〇〇]的一晶 轴0 本發明的第二觀點提供一光學系統，具有·· 一第-組幅射傳導構件，具有以下特徵··有效地允許 200 nm或以下波長的光線通過，其中該光軸實質上相等於 曰口軸[100],或在光學上等於該晶軸[1〇〇]的一晶軸，以 及 一第二組幅射傳導構件，具有以下特徵：有效地允許 200 nm或以下波長的光線通過，其中該龙軸實質上相等於 一晶軸[100]，或在光學上等於該晶軸[1〇〇]的一晶軸；並 中 〃 該第一組幅射傳導構件和第二組幅射傳導構件具有位置 上的關係’彼此實質上以光軸為主旋轉4 5。。 藉由本發明第二觀點的較佳設定，該光學系統另具有第V. Description of the invention (3) The effect is to a certain degree, but as mentioned above, the birefringence effect in the opposite direction cannot be accurately corrected. As a result, the correction effect is insufficient. After considering the problems described above, the object of the present invention is to provide an optical system with good optical effect, which does not actually accept the effect of birefringence even if an optical material such as fluorite is used which has birefringence in nature, and疋 Provide an exposure device equipped with the optical system. [Problem Solving Device] In order to solve the above-mentioned problem, the first aspect of the present invention provides an optical subsystem 'having at least one radiation-conducting member, having the following characteristics ··· efficiently allowing light with a wavelength of nm or below to pass through', wherein the The optical axis is substantially equal to a crystal axis [100], or a crystal axis that is optically equal to the crystal axis [100]. A second aspect of the present invention provides an optical system having ... The radiation-conducting member has the following characteristics: · Effectively allows light having a wavelength of 200 nm or below to pass through, wherein the optical axis is substantially equal to the aperture axis [100], or optically equal to the crystal axis [100]. A crystal axis, and a second group of radiation-conducting members, have the following characteristics: effectively allow light with a wavelength of 200 nm or below to pass, wherein the dragon axis is substantially equal to a crystal axis [100], or is optically equal to A crystal axis of the crystal axis [100]; and 〃 The first group of radiation conducting members and the second group of radiation conducting members have a positional relationship, and each other rotates mainly by the optical axis 4 5. . With a preferred setting of the second aspect of the present invention, the optical system further has a first
本紙張尺度適财S國家標準(CNS) A4規格(21GX297公釐) 573315 A7 ---—__— B7 五、發明説明（4 ) " ： " 二組幅射傳導構件，具有以下特徵：有效地允許2〇〇 nm& 下波長光線通過’其中該光軸實質上相等於一晶軸 [111 ]，或在光學上等於該晶軸[丨丨1 ]的一晶軸，以及一第 四組幅射傳導構件，具有以下特徵：有效地允許2〇〇 n m以 下波長光線通過’其中該光軸實質上相等於一晶軸 [π 1] ’或在光學上等於該晶軸[i丨U的一晶軸；其中第三 組幅射傳導構件和第四組幅射傳導構件具有位置上的關 係’彼此實質上以光軸為主旋轉6 0 〇。 此外，最好該光學系統另具有一第五組幅射傳導構件， 具有以下特徵：有效地允許2〇〇 nm或以下波長光線通過， 其中該光軸實質上相等於一晶軸[11 〇]，或在光學上等於 該晶軸[11 0]的一晶軸，以及一第六組幅射傳導構件，具 有以下特徵·有效地允許2 0 0 n m或以下波長光線通過，其 中該光軸實質上相等於一晶軸[110]，或在光學上等於該 晶軸[110]的一晶軸；其中該第五組幅射傳導構件和第六 組幅射傳導構件具有位置上的關係，彼此實質上以光軸為 主旋轉90。。 本發明的第三觀點提供一光學系統，具有一第五組幅射 傳導構件，具有以下特徵··有效地允許2、00 nm或以下波長 的光線通過，其中該光軸實質上相等於一晶軸[110]，或 在光學上等於該晶軸[1 1 0]的一晶軸，以及 一第六組幅射傳導構件，具有以下特徵：有效地允許 200 nm或以下波長的光線通過，其中該光軸實質上相等於 一晶軸[110]，或在光學上等於該晶軸[1丨0]的一晶軸；其 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公釐) 中 該第五組幅射傳導構件和第六組幅射傳導構件具有位置 上的關係，彼此實質上以光軸為主旋轉90。。 本發明的第四觀點提供一光學系統，具有至少一幅射傳 導構件，具有以下特徵：有效地允許200 nm或以下波長的 光線通過，其中該光軸實質上相等於一晶軸[1〇〇]，或在 光學上等於該晶軸[100]的一晶軸； 一第一組幅射傳導構件，具有以下特徵：有效地允許 200 nm或以下波長的光線通過，其中該光軸實質上相等於 一晶軸[100]，或在光學上等於該晶軸[1〇〇]的一晶軸；以 及 一第二組幅射傳導構件，具有以下特徵：有效地允許 200 n m或以下波長的光線通過，其中該光軸實質上相等於 一晶軸[100],或在光學上等於該晶軸[1〇〇]的一晶軸；其 中 孩第一組幅射傳導構件和第二組幅射傳導構件具有位置 上的關係，彼此實質上以光軸為主旋轉45。。 藉由本發明第四觀點的較佳設定，該光學系統另具有一 第二组幅射傳導構件，具有以下特徵：有效地允許200 n m 或以下波長的光線通過，其中該光軸實質上相等於一晶軸 [111 ]，或在光學上等於該晶軸[i i丨]的一晶軸，以及 一第四組幅射傳導構件，具有以下特徵：有效地允許 200 nm或以下波長的光線通過，其中該光軸實質上相等於 一晶軸[111]，或在光學上等於該晶軸[丨丨丨]的一晶軸；其 -8- 573315 A7This paper is a national standard (CNS) A4 specification (21GX297 mm) 573315 A7 -----__-- B7 V. Description of the invention (4) ": " Two sets of radiation conducting members, with the following characteristics: Effectively allow 200nm & lower wavelength light to pass' where the optical axis is substantially equal to a crystal axis [111], or a crystal axis optically equal to the crystal axis [丨 丨 1], and a fourth The group of radiation conducting members has the following characteristics: effectively allows light with a wavelength below 200 nm to pass through 'where the optical axis is substantially equal to a crystal axis [π 1]' or optically equal to the crystal axis [i 丨 U A crystal axis; wherein the third group of radiating conductive members and the fourth group of radiating conductive members have a positional relationship 'they are substantially rotated by 60 ° with the optical axis as the main axis. In addition, it is preferable that the optical system further has a fifth group of radiation-conducting members, which has the following characteristics: effectively allows light with a wavelength of 200 nm or below to pass through, wherein the optical axis is substantially equal to a crystal axis [11 〇] , Or a crystal axis that is optically equal to the crystal axis [11 0], and a sixth group of radiation-conducting members, has the following characteristics: effectively allows light at a wavelength of 200 nm or less to pass through, wherein the optical axis is substantially Is a crystal axis [110] or optical axis equal to a crystal axis [110]; wherein the fifth group of radiation conducting members and the sixth group of radiation conducting members have a positional relationship with each other Essentially the optical axis is rotated by 90. . A third aspect of the present invention provides an optical system having a fifth group of radiation-conducting members having the following characteristics: ... effectively allowing light having a wavelength of 2,000 nm or less to pass through, wherein the optical axis is substantially equal to one crystal The axis [110], or a crystal axis optically equal to the crystal axis [1 1 0], and a sixth group of radiation-conducting members, have the following characteristics: effectively allow light with a wavelength of 200 nm or less to pass, where The optical axis is substantially equal to a crystal axis [110], or an optical axis equal to the crystal axis [1 丨 0]; its paper size applies to the Chinese National Standard (CNS) A4 specification (210X297 mm) The fifth group of radiating conductive members and the sixth group of radiating conductive members have a positional relationship, and each of them is rotated substantially by the optical axis by 90. . A fourth aspect of the present invention provides an optical system having at least one radiation-conducting member, which has the following characteristics: effectively allows light having a wavelength of 200 nm or below to pass through, wherein the optical axis is substantially equal to a crystal axis [1〇〇 ], Or a crystal axis that is optically equal to the crystal axis [100]; a first group of radiating conductive members has the following characteristics: effectively allows light with a wavelength of 200 nm or below to pass, wherein the optical axis is substantially the same as A crystal axis equal to a crystal axis [100], or a crystal axis optically equal to the crystal axis [100]; and a second group of radiation-conducting members having the following characteristics: effectively allows light having a wavelength of 200 nm or less Pass, where the optical axis is substantially equal to a crystal axis [100], or a crystal axis optically equal to the crystal axis [100]; wherein the first group of radiation conductive members and the second group of radiation The conductive members have a positional relationship, and each of them rotates 45 with the optical axis as the main axis. . With the preferred setting of the fourth aspect of the present invention, the optical system further has a second group of radiation-conducting members, which has the following characteristics: effectively allows light with a wavelength of 200 nm or below to pass through, wherein the optical axis is substantially equal to one The crystal axis [111], or a crystal axis optically equal to the crystal axis [ii 丨], and a fourth group of radiation-conducting members, have the following characteristics: effectively allow light with a wavelength of 200 nm or less to pass, where The optical axis is substantially equal to a crystal axis [111], or an optical axis equal to the crystal axis [丨 丨 丨]; its -8- 573315 A7
中 邊第二組幅射傳導構件和第四組幅射傳導構件具有位置 上的關係，彼此實質上以光軸為主旋轉6〇。。 本發明的第五觀點提供一光學系統，具有至少一幅射傳 導構件，具有以下特徵：有效地允許200 n m或以下波長的 光線通過，其中該光軸實質上相等於一晶軸[1〇〇]，或在 光學上等於該晶軸[100]的一晶軸； 一第五組幅射傳導構件，具有以下特徵：有效地允許 200 nm或以下波長的光線通過，其中該光軸實質上相等於 一晶軸[110]，或在光學上等於該晶軸[11〇]的一晶軸；以 及 一第六組幅射傳導構件，具有以下特徵：有效地允許 200 n m或以下波長的光線通過，其中該光軸實質上相等於 一晶軸[110]，或在光學上等於該晶軸[丨10]的一晶軸；其 中 該第五組幅射傳導構件和第六組幅射傳導構件具有位置 上的關係，彼此實質上以光軸為主旋轉9〇。。 本發明的第六觀點提供一光學系統，具有一第一組幅射 傳導構件，具有以下特徵··有效地允許2、〇 〇 n m或以下波長 的光線通過，其中該光軸實質上相等於一晶軸[100]，或 在光學上等於該晶軸[1 〇〇]的一晶軸； 一第二組幅射傳導構件，具有以下特徵：有效地允許 200 nm或以下波長的光線通過，其中該光軸實質上相等於 一晶軸[100]，或在光學上等於該晶軸[100]的一晶軸； -9- 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公爱)The second group of radiation-conducting members and the fourth group of radiation-conducting members in the center have a positional relationship, and they rotate substantially 60 ° around the optical axis. . A fifth aspect of the present invention provides an optical system having at least one radiation-conducting member, which has the following characteristics: effectively allows light having a wavelength of 200 nm or below to pass through, wherein the optical axis is substantially equal to a crystal axis [1〇〇 ], Or a crystal axis that is optically equal to the crystal axis [100]; a fifth group of radiating conductive members has the following characteristics: effectively allows light with a wavelength of 200 nm or below to pass, wherein the optical axis is substantially the same as A crystal axis equal to a crystal axis [110], or a crystal axis optically equal to the crystal axis [11〇]; and a sixth group of radiation-conducting members having the following characteristics: effectively allows light with a wavelength of 200 nm or less to pass through Where the optical axis is substantially equal to a crystal axis [110] or an optical axis equal to the crystal axis [丨 10]; wherein the fifth group of radiation conducting members and the sixth group of radiation conducting members There is a positional relationship, and each of them is rotated substantially 90 degrees with the optical axis as the main axis. . A sixth aspect of the present invention provides an optical system having a first group of radiation-conducting members having the following characteristics: · effectively allowing light having a wavelength of 2,000 nm or less to pass through, wherein the optical axis is substantially equal to one Crystal axis [100], or a crystal axis optically equal to the crystal axis [100]; a second group of radiating conductive members, which has the following characteristics: effectively allows light with a wavelength of 200 nm or below to pass through, wherein The optical axis is substantially equal to a crystal axis [100], or optical axis is equivalent to a crystal axis [100]; -9- This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) Love)
裝 訂Binding
573315 A7 ------ B7 五、發明説明X] Γ ' ~— 一第五組幅射傳導構件，具有以下特徵：有效地允許 200 nm或以下波長的光線通過，其中該光軸實質上相等於 一晶軸[110]，或在光學上等於該晶軸[11〇]的一晶軸丨以 及 一第六組幅射傳導構件，具有以下特徵··有效地允許 200 nm或以下波長的光線通過，其中該光軸實質上相等於 一晶軸[110]，或在光學上等於該晶軸[丨1〇]的一晶軸；其 中 〃 该第一組幅射傳導構件和第二組幅射傳導構件具有位置 上的關係’彼此貫質上以光軸為主旋轉4 5。；以及 #亥第五組幅射傳導構件和第六組幅射傳導構件具有位置 上的關係’彼此貫質上以光轴為主旋轉9 〇。。 藉由本發明第六觀點的較佳設定，該光學系統另具有至 少一幅射傳導構件，具有以下特徵：有效地允許2〇〇 以下波長的光線通過，其中該光軸實質上相等於一晶軸 [100]，或在光學上等於該晶軸[100]的一晶軸。此外，最 好該光學系統具有一第三組幅射傳導構件，具有以下特 徵··有效地允許200 nm或以下波長光線通過，其中該光軸 實質上相等於一晶軸[111]，或在光學上、等於該晶軸[lu] 的一晶軸，以及一第四組幅射傳導構件，具有以下特徵： 有效地允許200 n m或以下波長光線通過，其中該光軸實質 上相等於一晶軸[1 1 1 ]，或在光學上等於該晶軸[1丨丨]的一 晶輛，其中該弟二組幅射傳導構件和第四組幅射傳導構件 具有位置上的關係，彼此實質上以光軸為主旋轉60。。 -10- I紙張尺度適用中國國家標準(CNS) A4規格(210X297公釐) 五、發明説明（8 在=發明的上述各觀點中，最好該光學系統為··沿著光 軸的第:組幅射傳導構件的總厚度，與沿著光軸的第二組 幅射傳導構件的總厚度實質上相等；沿著光#的第五組幅 射傳導構件的總厚度，與沿著光軸的第六組幅射傳導構件 的、心厚度貫質上相等；以及沿著光軸的第三組幅射傳導構 :::心厚度’與沿著光軸的第四組幅射傳導構件的總厚度 员貝上相等。除此之外，最好該光學系統具有至少兩個負 透鏡i兀件，日Z： J、二> t , 土 y琢兩個負透鏡元件具有第五組和第六組 巾田射傳導構件。甚至，最好該幅射傳導構件是用螢石做成 的0 本各明的第七觀點提供一種投射光學系統，可將在第一 表面上开7成的圖案影像，投射至第二表面上；其中該投射 光學系統具有本發明第一至第六觀點中的任一之光學系 •先本1明的第八觀點提供一種投射光學系統，具有本發 第五觀點之光學系統，並將在第一表面上形成的 圖^像，投射至第二表面上；其中該投射光學系統具有 二凹面，，形成—往復式光程，並具有—折射光學構件位 =任中’以及該折㈣學構件具有第五 :組幅射料構件。本發明”九㈣提供—種曝光裝 =括用：照明光罩的一照明系統，以及本發明第一至 在光罩上所形成之圖案在光敏性基板上形成 ::發明中，第—组幅射傳導構件和第二組幅 件八有位置上的關係’彼此實質上以光轴為主旋轉45: 本紙張尺度適财s g家標準(CNS) A4#㈣97公爱） -11- 五、發明說明（ 事\代表以光軸為主、指向某一方向的預定晶軸(例 :姐晶軸[010]、[001]、[0H]或[01⑴與第 '组幅射傳 導構件和第二組幅射傳導構件中指向不同方向的光轴之間 Z關角度’實質上為45。。當晶軸fl⑼]相等於光轴時， 于+光軸中央的雙折射效果之循環不對稱以90。為間隔出 現，因此，具有彼此實質上以光軸為主旋轉C。的位置關 係，代表菘構件具有位置上的關係，彼此實質上以光軸為 主旋轉45° + (η*90。）（其中n為整數）。 此外在本發明中1三組幅射傳導構件和第四組幅射 傳導構件具有位置上的關係，彼此實質上以光轴為主旋轉 60的事貫，代表以光軸為主、指向某一方向的預定晶轴 (例如，晶軸[-111]、[π·!]或[1-η])與第三組幅射傳導構 件和第四組幅射傳導構件中指向不同方向的光#之間的相 關角度，實質上為6〇。。#晶軸[⑴]相等於光轴時，對準 光軸中央的雙折射效果之循環不對稱以12〇。為間隔出現， 因此，具有彼此實質上以光軸為主旋轉6〇。的位置關係， 代表該構件具有位置上的關係，彼此實質上以光軸為主旋 轉60° + (η* 120。）（其中η為整數）。 甚至，在本發明中，第五組幅射傳導構件和第六組幅射 傳導構件具有位置上的關係，彼此實質上以光軸為主旋轉 〇的事貝，代表以光軸為主、指向某一方向的預定晶軸 (例如，晶軸[001]、[-U1]、卜丨丨㈧或^丨丨])與第五組幅 射傳導構件和第六組幅射傳導構件中指向不时向的光軸 之間的相關角度，實質上為90。。當晶軸[110]相等於光軸 A7573315 A7 ------ B7 V. Description of the invention X] Γ '~~ A fifth group of radiation conducting members has the following characteristics: effectively allows light with a wavelength of 200 nm or below to pass through, wherein the optical axis is substantially A crystal axis equal to a crystal axis [110], or a crystal axis optically equal to the crystal axis [11〇] and a sixth group of radiation conducting members, have the following characteristics: · Effectively allow 200 nm or less wavelength Light passes through, wherein the optical axis is substantially equal to a crystal axis [110], or a crystal axis optically equal to the crystal axis [丨 1〇]; wherein 〃 the first group of radiation-conducting members and the second group The radiation-conducting members have a positional relationship 'they are rotated by the optical axis 4 5 in principle. ; And # 海 The fifth group of radiation conducting members and the sixth group of radiation conducting members have a positional relationship ', and they are rotated by 90 ° with respect to each other mainly on the optical axis. . With the preferred setting of the sixth aspect of the present invention, the optical system further has at least one radiation-conducting member, which has the following characteristics: effectively allows light having a wavelength below 200 to pass through, wherein the optical axis is substantially equal to a crystal axis [100], or a crystal axis optically equal to the crystal axis [100]. In addition, it is preferable that the optical system has a third group of radiation-conducting members, which has the following characteristics: ... effectively allows light with a wavelength of 200 nm or below to pass through, wherein the optical axis is substantially equal to a crystal axis [111], or Optically, a crystal axis equal to the crystal axis [lu], and a fourth group of radiation-conducting members have the following characteristics: Effectively allow light with a wavelength of 200 nm or below to pass through, wherein the optical axis is substantially equal to a crystal Axis [1 1 1], or a crystal car that is optically equal to the crystal axis [1 丨 丨], in which the two groups of radiation conducting members and the fourth group of radiation conducting members have a positional relationship and are substantially mutually related Rotate 60 on the optical axis. . -10- I paper size applies the Chinese National Standard (CNS) A4 specification (210X297 mm) 5. Description of the invention (8 In the above-mentioned viewpoints of the invention, it is preferable that the optical system is the first along the optical axis: The total thickness of the group of radiation-conducting members is substantially equal to the total thickness of the second group of radiation-conducting members along the optical axis; the total thickness of the fifth group of radiation-conducting members along the light axis and the optical axis Of the sixth group of radiation-conducting members, the thickness of which is qualitatively equal; and the third group of radiation-conducting structures along the optical axis ::: heart thickness' and the fourth group of radiation-conducting members along the optical axis. The total thickness is equal. In addition, it is preferable that the optical system has at least two negative lenses i, Z: J, two > t, and two negative lens elements have a fifth group and The sixth group of radiating conductive members. Even more preferably, the radiating conductive members are made of fluorite. The seventh aspect of the present invention provides a projection optical system that can open 70% of the light on the first surface. A pattern image projected onto a second surface; wherein the projection optical system has the first to sixth aspects of the present invention Optical system of any one of the eighth aspect of the present invention provides a projection optical system having the optical system of the fifth aspect of the present invention, and projects an image formed on the first surface onto the second surface. ; Wherein the projection optical system has two concave surfaces, forming a reciprocating optical path, and having-a refractive optical member position = Renzhong 'and the folding member has a fifth: a group of radiation material members. The present invention "Nine Provide an exposure device including: an illumination system for illuminating a photomask, and a pattern formed on a photoresist substrate of the first to the present invention is formed on a photosensitive substrate: In the invention, the first group of radiation conducting members and The second group of webpages has a positional relationship. 'Each of them is mainly based on the optical axis. 45: The paper size is suitable for financial standards (CNS) A4 # ㈣97 公 爱） -11- 5. Description of the invention (things \ Represents a predetermined crystal axis that is dominated by the optical axis and points in a certain direction (e.g., the sister crystal axis [010], [001], [0H], or [01⑴) and the 'group of radiation conducting members and the second group of radiation conducting The Z-off angle between the optical axes in the component pointing in different directions is substantially 45. When the crystal axis fl ⑼] When it is equal to the optical axis, the cycle asymmetry of the birefringence effect at the center of the + optical axis appears at intervals of 90 °. Therefore, there is a positional relationship where the optical axis mainly rotates C., which represents that the 菘 member has The positional relationship is substantially 45 ° + (η * 90.) (Where n is an integer) with the optical axis as the main rotation. In addition, in the present invention, there are 1 set of three radiation conducting members and a fourth set of radiation conducting members. It has a positional relationship. The rotation of 60 with the optical axis as the main axis represents a predetermined crystal axis with the optical axis as the main axis and pointing in a certain direction (for example, crystal axis [-111], [π ·!] Or [1-η]) and the correlation angle between the third group of radiating conductive members and the fourth group of radiating conductive members directed to light # in different directions is substantially 60. . When # 晶 轴 [⑴] is equal to the optical axis, the cycle of asymmetry of the birefringence effect aligned with the center of the optical axis is 120. It appears at intervals, so it has a rotation of 60 with each other substantially on the optical axis. The positional relationship of represents that the components have a positional relationship, and each of them essentially rotates by 60 ° + (η * 120.) with the optical axis as the main axis (where η is an integer). Furthermore, in the present invention, the fifth group of radiation conducting members and the sixth group of radiation conducting members have a positional relationship, and each of them substantially rotates with the optical axis as the main component, and represents the optical axis as the main component and points A predetermined crystal axis in a certain direction (for example, crystal axis [001], [-U1], BU 丨 丨 ㈧, or ^ 丨 丨]) points from time to time in the fifth group of radiation conductive members and the sixth group of radiation conductive members. The correlation angle between the optical axes in the directions is substantially 90. . When the crystal axis [110] is equal to the optical axis A7
時，對準光軸中央的雙折射效果之循環不對稱以刚。為間 隔出現’因a ’具有彼此實質上以光軸為錢轉9〇。的位 置關係，代表孩構件具有位置上的關係，彼此實質上以光 軸為主旋轉90〇 + (n*i80。）（其中n為整數）。 [具體實施例的說明] 本發明較佳具體實施例說明如下，同時請參見附圖。 圖1是一圖表，概略顯示根據本發明第一具體實施例之 具有-光學系統的曝S裝置組成零件。在第—具體實施例 中，本發明應用到具有一折射型投射光學系統的掃描投射 曝光裝置。如圖1所示，第一具體實施例的曝光裝置具有 一照明裝置3 0 ,用於照明位於第一表面上的主光罩（光 罩）3 1。 照明裝置3 0具有一光源，該光源具有一 F 2雷射，提供 157 nm波長的光線，一光學整合器，形成來自光源光預定 形狀（圓形、環形、有雙極的、四極或類似形狀）的第二光 源，以及一照明範圍孔徑遮光，用以限制在主光罩3丨上的 照明區域，並利用接近強度一致的分佈方式，照射主光罩 3 1上的照明區域。 在照明裝置3 0之内的照明光程，較好利用鈍氣潔淨，在 本具體實施例中使用氮氣潔淨。主光罩3 1安裝在主光罩台 32上，而且主光罩31和主光罩台32利用外罩33與外面大 氣隔離。較好也利用惰性氣體潔淨外罩3 3内的空間，在本 具體實施例中此空間利用氮氣潔淨。 由照明裝置3 0照射、來自主光罩3 1的光線導向晶圓 -13- 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐) 573315At this time, the cycle of the birefringence effect directed at the center of the optical axis is asymmetric to rigid. For the interval, 'cause a' has each other substantially turning the optical axis to 90 °. The positional relationship of 代表 represents the positional relationship of the child components, and each of them rotates 90 ° + (n * i80.) With the optical axis as the main axis (where n is an integer). [Description of Specific Embodiments] The preferred embodiments of the present invention are described below, and please refer to the accompanying drawings. Fig. 1 is a diagram schematically showing constituent parts of an exposure apparatus having an optical system according to a first embodiment of the present invention. In the first embodiment, the present invention is applied to a scanning projection exposure apparatus having a refractive projection optical system. As shown in FIG. 1, the exposure device of the first embodiment has an illumination device 30 for illuminating a main mask (mask) 31 on the first surface. The illuminating device 30 has a light source having an F 2 laser providing 157 nm light, and an optical integrator to form a predetermined shape of light from the light source (circular, circular, bipolar, quadrupole, or the like) ), A second light source, and a lighting range aperture for shading, to limit the illumination area on the main mask 31, and to illuminate the illumination area on the main mask 31 using a distribution method with close intensity. The illumination path length within the lighting device 30 is preferably cleaned with inert gas, and in this embodiment, nitrogen is used for cleaning. The main mask 31 is mounted on the main mask stage 32, and the main mask 31 and the main mask stage 32 are isolated from the outside by the outer cover 33. It is also preferable to clean the space inside the outer cover 33 with an inert gas. In this embodiment, this space is cleaned with nitrogen. The light guide wafer illuminated by the lighting device 3 0 and coming from the main mask 31 1 -13- This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) 573315
42 ,當做光敏性基板，透過一投射光學系統叫，該系統具 有複數個透鏡元件3 4 - 3 9沿著光軸AX排列以及一孔徑遮光 40用於控制相干因素㈠值），並在晶圓42曝光區域的主光 罩3 1上形成一圖案影像。較好是此投射光學系統4丨中的投 射光程係利用純氣潔淨，在本具體實施例中該光程利用氦 潔淨。 忒晶圓4 2安裝在一晶圓台4 3上，以致相關表面位於一第 一表面上’當作投射光學系統4 1的成像表面，而且晶圓4 2 和晶圓台43由一外罩44與外面大氣·隔離。較好也利用鈍氣 潔淨外罩44内的空間，在.本具體實施例中此空間利用氮氣 ¥淨。此外’主光罩台3 2和晶圓台4 3根據投射光學系統 41的放大速率，相對於投射光學系統41來加以移動，在主 光罩3 1上的圖案藉由照射主光罩3丨轉移到晶圓4 2上的曝 光區域^ 在第一具體實施例中，折射型投射光學系統4丨的複數個 透鏡元件34-39是用螢石做成的（氟化鈣）。圖2是一圖表， 解釋螢石的晶軸方向。如圖2所示，螢石的晶軸係根據立 體系統的XYZ座標系統來規定。也就是說，規定晶軸[丨〇〇] 要沿著+ X軸，晶軸[010]沿著+ γ軸和晶軸[〇〇1]沿著+ Z 轴0 規定晶軸[101]在XZ平面上與晶軸[1〇〇]和晶軸[〇〇丨]形 成45。角度的方向，規定晶軸[1 1〇]在χγ平面上與晶軸 [100]和晶軸[〇1〇]形成45。角度的方向，以及規定晶軸[on] 在XZ平面上與晶軸[〇1〇]和晶軸[001]形成45。角度的方 -14- 本紙張尺度適用中國國家標準(CNS) A4規格(210X 297公釐) 573315 A7 ---------B7五、發明説明（ ） 向。此外，規定晶軸[Ul]與+ X，+Y和+z軸形成相等銳 角的方向。 在圖2中’只顯示由+ χ、+γ和+Z軸所規定空間中的 曰曰轴’但在其他的空間中，晶軸也以同樣方式規定。如上 冒討論過，在螢石中，在由圖2實線指出的晶軸[ηι]和在 不具代表性的晶軸[-1η]、同類晶軸上， 雙折射本質上為零（最小的）。 同樣地，在由圖2實線指出的晶軸[100]、[〇1〇]和[〇〇1] 上又.折射本質上為零（最小的）。另一方面，在由圖2虛 線指出的晶軸[110]、[101]和[〇11]以及不具代表性的晶軸 [-110]、[-101]和[01-1]同類晶軸上，雙折射為最大值。 以下，Burnett等人上述方法的校正效率將在解釋本發 明方法之前加以確認。圖3是一圖表，解釋Burneu等人的 万法，並根據光束入射角度，顯示雙折射率的分佈。在圖 3中，圖中虛線所指出的五個同心圓，每個圓顯示1〇。的刻 度。因此’最中央的圓顯示與光軸成1〇。入射角區域，而 最外圈的圓顯示與光軸成5 〇 ◦的入射角區域。 除此足外，黑色點指出有一相當高折射率的無雙折射區 域，白色點指出有一相當低折射率的無雙折射區域，而畫 有交叉平行線的小圓（請參閱圖5c)，指出有一中間折射率 的無雙折射區域。另一方面，粗線的圓和長雙箭頭指出在 有雙折射的區域中，相當高折射率的方向，細線的圓和短 雙則頭扣出在有雙折射的區域中，相當低折射率的方向。 上述符號與以下圖4和5中的相同。42. As a photosensitive substrate, it is called through a projection optical system. The system has a plurality of lens elements 3 4-3 9 arranged along the optical axis AX and an aperture shading 40 for controlling the coherence factor (threshold value). A pattern image is formed on the main mask 31 in the 42 exposure area. Preferably, the projection optical path in the projection optical system 4 is cleaned with pure gas, and in this embodiment, the optical path is cleaned with helium. The wafer 42 is mounted on a wafer stage 43 so that the relevant surface is located on a first surface 'as the imaging surface of the projection optical system 41, and the wafer 4 2 and the wafer stage 43 are covered by a cover 44 Isolate from the outside atmosphere. It is also preferable to clean the space in the outer cover 44 with inert gas. In this embodiment, this space is cleaned with nitrogen. In addition, the main mask stage 3 2 and the wafer stage 4 3 are moved relative to the projection optical system 41 according to the magnification rate of the projection optical system 41. The pattern on the main mask 31 is illuminated by the main mask 3 丨Transfer to the exposed area on the wafer 42. In the first embodiment, the plurality of lens elements 34-39 of the refractive projection optical system 4 are made of fluorite (calcium fluoride). Fig. 2 is a graph explaining the crystal axis direction of fluorite. As shown in Figure 2, the crystal axis system of fluorite is specified according to the XYZ coordinate system of the stereo system. That is, the crystal axis [丨 〇〇] is specified along the + X axis, the crystal axis [010] is along the + γ axis, and the crystal axis [〇〇1] is along the + Z axis. 0 The crystal axis [101] is specified in 45 is formed on the XZ plane with the crystal axis [100] and the crystal axis [〇〇 丨]. The direction of the angle is such that the crystal axis [1 10] forms 45 with the crystal axis [100] and the crystal axis [0 10] on the χγ plane. The direction of the angle, and it is prescribed that the crystal axis [on] forms 45 with the crystal axis [00] and the crystal axis [001] on the XZ plane. The angle of the angle -14- This paper size applies to the Chinese National Standard (CNS) A4 specification (210X 297 mm) 573315 A7 --------- B7 V. Description of the invention () Direction. In addition, the directions in which the crystal axis [Ul] forms equal acute angles with the + X, + Y, and + z axes are specified. In Fig. 2, 'only the "axis in the space defined by the + χ, + γ, and + Z axes" is shown', but in other spaces, the crystal axis is also specified in the same manner. As discussed above, in fluorite, the birefringence is essentially zero on the crystal axis [ηι] indicated by the solid line in Figure 2 and on the unrepresentative crystal axis [-1η] and similar crystal axes (the smallest ). Similarly, on the crystal axes [100], [〇1〇], and [〇〇1] indicated by the solid lines in FIG. 2, the refraction is essentially zero (minimum). On the other hand, the crystal axes [110], [101], and [〇11] and the unrepresentative crystal axes [-110], [-101], and [01-1] are indicated by the dotted lines in FIG. 2. On the other hand, birefringence is at its maximum. In the following, the correction efficiency of the above method by Burnett et al. Will be confirmed before explaining the method of the present invention. Figure 3 is a graph explaining the method of Burneu et al. And showing the distribution of birefringence according to the angle of incidence of the beam. In Figure 3, the five concentric circles indicated by the dashed lines in the figure each show 10. The degree of. Therefore, the 'most center circle' is displayed at 10 with respect to the optical axis. The angle of incidence area, and the outermost circle shows an angle of incidence area 50 ° from the optical axis. In addition to this, black dots indicate a region with a relatively high refractive index without birefringence, white dots indicate a region with a relatively low refractive index without birefringence, and small circles with crossed parallel lines (see Figure 5c) indicate a middle Birefringence-free region of refractive index. On the other hand, a thick circle and a long double arrow point out the direction of a relatively high refractive index in a region with birefringence, and a circle with a thin line and a short double head buckle out in a region with a high refractive index. Direction. The above symbols are the same as those in FIGS. 4 and 5 below.
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線 -15- 573315 A7 B7 13 五、發明説明（ 如上冒討論過，藉由Burnett等人的方法，晶抽[⑴]和 -對勞石透鏡的絲為相等的轴，而互該對勞石透鏡以該 光轴為主彼此旋轉6〇。。因此，在一個螢石透鏡中雙折射 率的分佈如圖3a所示，在另一螢石透鏡中雙折射率的分你 如圖3b所示。因此，結合成一整體的該對營石透鏡中的雙 折射率分佈，變成如圖3 c所示。 ，在這情況下，對應到相等於該光轴的晶^[ui]之區 域’變成具有相當低折射率的雙折射區域，如圖3a和外所 除此之夕卜對應到晶軸[100]、.[01〇]和[〇〇1]的區域， 變成具有相當高折射率的無雙折射區域。此外，對應到晶 轴Π10]、Π01]和[川]的區域，變成相對於正切極^: 相當低折射率的雙折射區域，相對於放射極化，有相當高 的折射率。因此，在每一個別的；泰|土丄 、 杜母個別的透鏡中，可看到雙折射的 效果在光軸35.26。區域内a # 4* # /丄。 飞円為取大值（由晶軸[111]和晶軸 [110]所形成的角度）。 另一方面’藉由彼此以60。旋轉該對螢石透鏡，晶軸 [:人〇]、[m]和[〇11]的效果’其中雙折射為最大值時在 ，.“成-整體的該對勞石透鏡中，即會縮小，如圖域 =是，在與光轴成35.26。的區域中'，也就是說相當接 ^的區域’那裡還保持—雙折射區域，相較於放射極 的折射车’正切極化有較低的折射率。結果，藉由 _ett寺人的方法，很難適當地保持氣好的成像效果(光 子效果），因為會看到某種程度的雙折射效果。 如第一具體實施例的第-種方法，利用投射光學系統ΜLine -15- 573315 A7 B7 13 V. Description of the invention (discussed above, by the method of Burnett et al., The crystal extraction [⑴] and-the wires of the Lao Shi lens are equal axes, and the Lao Shi The lens rotates 60 ° with each other around this optical axis. Therefore, the distribution of birefringence in one fluorite lens is shown in Figure 3a, and the distribution of birefringence in another fluorite lens is shown in Figure 3b. Therefore, the birefringence distribution in the pair of campstone lenses combined as a whole becomes as shown in Fig. 3c. In this case, the region 'corresponding to the crystal ^ [ui] equivalent to the optical axis becomes The birefringent region with a relatively low refractive index, as shown in Fig. 3a and the other regions corresponding to the crystal axes [100],. [01〇], and [〇〇1], becomes a region with a relatively high refractive index. No birefringence region. In addition, the regions corresponding to the crystal axes Π10], Π01], and [川] become birefringent regions with a relatively low refractive index ^: a relatively low refractive index region and a relatively high refractive index with respect to radiation polarization . Therefore, the effect of birefringence can be seen in each individual lens Optical axis 35.26. In the area a # 4 * # / 区域. Flying 円 is a large value (the angle formed by the crystal axis [111] and the crystal axis [110]). On the other hand, by 60. with each other For the pair of fluorite lenses, the effects of the crystal axes [: human 0], [m], and [〇11] ', where the birefringence is at its maximum, are "." As shown in the figure domain = Yes, in the area that is at 35.26 ° with the optical axis, that is, the area that is quite close to it is still maintained—the birefringence area, compared with the tangent polarization of the refraction car of the emitter. Low refractive index. As a result, it is difficult to properly maintain the good imaging effect (photon effect) by the method of _ett Temple, because a certain degree of birefringence effect is seen. As in the first specific embodiment, First method, using projection optical system M
本紙張尺度適财國國規297公II -16- 573315The size of this paper is suitable for national regulations 297 public II -16- 573315
中的複數個透鏡元件34-39 ,使第一组透鏡元件的光軸相 等於晶軸[100](或是一晶軸在光學上等於晶轴[ι〇〇]),使 第二組透鏡元件的光軸相等於晶軸[1〇〇](或是一晶軸在光 學上等於晶軸[ι00]),並且該第一組透鏡元件和第二組透 鏡兀件彼此以該光軸為主旋轉45。。此處，在光學上等於 晶軸[100]的晶軸為晶軸[〇1〇]和[〇〇1]。 圖4為一圖表，解釋本發明的第一種方法，並顯示有關 於光束入射角的雙折射率分佈方式。藉由此第一種方法， 第一組透鏡元件的雙折射率分佈方式如圖4a所示，第二組 透鏡兀件的雙折射率分佈方式如圖4b所示。結果，第一組 透鏡兀件和第二組透鏡元件的雙折射率分佈方式結合，即 成為如圖4c所示。 如圖4 a和4 b所,藉由此第一種方法，對應到晶軸 [100]、與光軸一致的區域，變成具有相當高折射率的無 雙折射區域。除此之外，對應到晶軸[lu]、[丨—丨丨]、[_ U-1]和[11-1]的區域，變成具有相當低折射率的無雙折射 區域。此外，對應到晶軸[101]、[iO—i]、[11〇]和[1-1〇] 的區域，變成相對於正切極化，有相當高折射率的雙折射 區域，相對於放射極化，有相當低的折射率。因此，可看 到在每一透鏡元件中，雙折射的效果在光軸45。區域内為 最大值（由晶軸[100]和晶軸[丨0 i ]所形成的角度）。 另一方面，如圖4 c所示，藉由以該光軸為主第一組透鏡 元件和第二組透鏡元件彼此旋轉45。，晶軸[1〇丨]、[1()_ 1]、[110]和[M〇]的效果，在雙折射為最大值、第一組透A plurality of lens elements 34-39 in the lens, so that the optical axis of the first group of lens elements is equal to the crystal axis [100] (or a crystal axis is optically equal to the crystal axis [ι〇〇]), so that the second group of lenses The optical axis of the element is equal to the crystal axis [100] (or a crystal axis is optically equal to the crystal axis [ι00]), and the first group of lens elements and the second group of lens elements each have the optical axis as Main rotation 45. . Here, the crystal axes that are optically equal to the crystal axis [100] are the crystal axes [〇1〇] and [〇〇1]. Fig. 4 is a diagram explaining the first method of the present invention, and showing the birefringence distribution pattern with respect to the incident angle of the light beam. By this first method, the birefringence distribution of the first group of lens elements is shown in Fig. 4a, and the birefringence distribution of the second group of lens elements is shown in Fig. 4b. As a result, the birefringence distribution of the lens elements of the first group and the lens elements of the second group are combined as shown in Fig. 4c. As shown in Figures 4a and 4b, by this first method, the region corresponding to the crystal axis [100] and the optical axis becomes a birefringence-free region with a relatively high refractive index. In addition, the regions corresponding to the crystal axes [lu], [丨 — 丨 丨], [_ U-1], and [11-1] become birefringent-free regions with a relatively low refractive index. In addition, the regions corresponding to the crystal axes [101], [iO-i], [11〇], and [1-1〇] become birefringent regions that have a relatively high refractive index with respect to tangent polarization, relative to radiation Polarized with a relatively low refractive index. Therefore, it can be seen that the effect of birefringence is on the optical axis 45 in each lens element. The area is the maximum value (the angle formed by the crystal axis [100] and the crystal axis [丨 0 i]). On the other hand, as shown in FIG. 4c, the first lens element and the second lens element are rotated 45 relative to each other by using the optical axis as the main lens element. , The effects of the crystal axes [1〇 丨], [1 () _ 1], [110], and [M〇], the maximum birefringence, the first group of transmission
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線 573315 A7 B7 發明説明（ 15 鍉元件和第二組透鏡元件結合為一整體且在光軸的45。區 域内時，會有相當地緩和，也就是說，與光軸分開的區域 且保持雙折射的區域，其正切極化的折射率會高於幅射極 化的折射率。在這情況下，在一般投射光學系統每一透鏡 凡件的光軸與光束之間的最大角度是35-4〇。。因此，藉由 第一種方法，就有可能達到好的成像效果，並有效地接收 拱晶軸[101]、[10-1]、[110]和的雙折射效果。 在本發明的第一種方法中，第一組透鏡元件和第二組透 鏡元件具有位置上的關係，彼此實質上以光軸為主旋轉 45的事貫，代表以光軸為主、指向某一方向的預定晶軸 (例如，晶軸[010]、[001]、[〇1-1]或[〇11])與第一組透鏡 元件和第二組透鏡元件中指向不同方向的光軸之間的相關 角度，實質上為45。。例如，以光軸為主，在第一組透鏡 兀件中的晶軸[010]與第二組透鏡元件的晶軸[〇1〇]之間的 相關角度為45。。 除此之外，如圖4a和4b所示，當晶軸[1〇〇]相等於該光 軸時，對準光軸中央的雙折射效果之循環不對稱以9〇。為 間隔出現，匕，在此第一種方法中，具有彼此實質上以 光軸為主旋轉45。的位置關係，代表該透鏡元件具有實質 '疋轉45 +(η 90 )的位置關係，也就是說彼此以該光料 為主旋轉45。、135。、225。、315。···.（其中η為整數）。 在上述解釋中，第—組透鏡元件和第二組透鏡元件各有 個或複數個透鏡元件。此外， 組透鏡元件包含複數個透鏡元件 當第一組透鏡元件或第二 的時候，該複數個透鏡元Line 573315 A7 B7 invention description (15 鍉 element and the second group lens element are integrated as a whole and within 45 of the optical axis. In the area, there will be considerable relaxation, that is, the area separate from the optical axis and remains double In the refracted region, the refractive index of the tangent polarization will be higher than the refractive index of the radiation polarization. In this case, the maximum angle between the optical axis and the beam of each lens of the general projection optical system is 35- 40. Therefore, with the first method, it is possible to achieve a good imaging effect and effectively receive the birefringence effects of the arch axis [101], [10-1], [110], and In the first method of the invention, the first group of lens elements and the second group of lens elements have a positional relationship, and the rotation of the optical axis is mainly 45, which represents that the optical axis is mainly oriented and points in a certain direction. Between a predetermined crystal axis (for example, the crystal axis [010], [001], [〇1-1], or [〇11]) and the optical axis in the first group lens element and the second group lens element pointing in different directions The relevant angle of the lens is substantially 45. For example, the optical axis is the main component. The correlation angle between the axis [010] and the crystal axis [〇1〇] of the second group of lens elements is 45. In addition, as shown in FIGS. 4a and 4b, when the crystal axis [100] is equal to When this optical axis is aligned, the cyclic asymmetry of the birefringence effect aligned with the center of the optical axis appears at intervals of 90 °. In this first method, there is a position where the optical axis is rotated by 45 ° with each other substantially. The relationship represents that the lens element has a position relationship of substantially 45 ° (+90), that is, the optical material is rotated by 45 °, 135 °, 225 °, 315 ... (where η) Is an integer). In the above explanation, the first group lens element and the second group lens element each have one or a plurality of lens elements. In addition, the group lens element includes a plurality of lens elements when the first group lens element or the second lens element , The plurality of lens elements
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線 國國家標規格(21〇 X 297公釐）Line national standard specifications (21〇 X 297 mm)
件不需要連績的透鏡元件。一組透鏡元件的觀念在以下第 三組至第六組透鏡元件中是相同的。在此第一種方法中， 較好是沿著光軸的第一組透鏡元件的總厚度與沿著光軸的 弟一組透鏡元件的總厚度，實質上相等。 但疋，如圖3c和4c所示，Burnett等人方法中光軸 3 5.26區域内的雙折射方向，與第一種方法中光軸仏。區域 内的雙折射方向，是完全相反的。因此，藉由利用一種結 合第一種方法和Burnett等人方法的第二方法，就有可能 達到事實上無雙折射效果的良好成像效果。 藉由第二種方法，利用投射光學系統4丨中的複數個透鏡 元件34-39 ’使第一組透鏡元件的光軸相等於晶軸[丨〇〇](或 是一晶軸在光學上等於晶軸[100]),使第二組透鏡元件的 光轴相等於晶軸[1〇〇](或是一晶軸在光學上等於晶軸 [100])，並且該第一組透鏡元件和第二組透鏡元件彼此以 这光軸為主旋轉45。。此外，使第三組透鏡元件的光軸相 等於晶軸[111](或是一晶軸在光學上等於晶軸[m]),使 第四組透鏡元件的光軸相等於晶軸[丨丨丨](或是一晶軸在光 學上等於晶軸[ill])，並且該第三組透鏡元件和第四組透 鏡元件彼此以該光軸為主旋轉60。。 、 此處，在光學上等於晶軸[m]的晶軸為晶軸[_m]、 [1-11]和[114]。 在本發明的第二種方法中，第三組透鏡元件和第四組透 鏡7L件具有位置上的關係，彼此實質上以光軸為主旋轉 60°的事實，代表以光軸為主、指向某一方向的預定晶軸 ~ -19~ 本紙張尺度適用家標準(C&S)A4規格(2ι〇χ297公爱)-- A7 ^---------- B7 五、發明巧(17 ) _ (〜Π如，日日軸[-111 ]、[ i i _丨]或[i d i ])與第三組透鏡元件和 =四組透叙兀件中指向不同方向的光軸之間的相關角度， 貫質上為60。。例如，以光轴為主，在第三組透鏡元件中 的晶軸[-111]與第四組透鏡元件的晶軸卜丨丨丨]之間的相關 角度為60。。 除此之外，如圖3a和3b所示，當晶軸[丨丨丨]相等於該光 軸時，對準光軸中央的雙折射效果之循環不對稱以1為 間隔出現。目此，在此第二種方法中，具有彼此實質上以 光軸為王旋轉60。的位置關係，代表該透鏡元件具有實質 上旋轉60%(n*120。）的位置關係，也就是說彼此以該光軸 為主旋轉60。、180。、300。····（其中n為整數）。 藉由此第二種方法，較好是沿著光軸的第一組透鏡元件 的總厚度與沿著光軸的第二組透鏡元件的總厚度，實質上 相等，並且沿著光軸的第三組透鏡元件的總厚度與沿著光 軸的第四組透鏡元件的總厚度，實質上相等。 除此之外，如圖3a和3b所示，使透鏡元件的光軸和晶軸 [ill]相等，因此，對應到晶軸[110]、[101]和[011]的區 域，在雙折射是最大值時，以12〇。間距存在，並且在光瞳 平面中具有3Θ的分佈方式的雙折射的效果，也就是說在影 像表面（晶圓表面）上所建立、類似像慧形失真的效果，因 而出現。相對來說，如圖4a和4b所示，使透鏡元件的光軸 和晶軸[100]相等，因此，對應到晶軸[101]、Uoq]、 [110]和[·101]的區域，在雙折射是最大值時，以9〇。間距 存在，並且在光瞳平面中具有4Θ的分佈方式的雙折射效果 ___^20. 本紙張尺度適用中國國家標準(CNS) Α4規格(210X297公爱丁—^---- 573315No lens elements are required for the series. The concept of one group of lens elements is the same in the third to sixth group of lens elements below. In this first method, the total thickness of the first group of lens elements along the optical axis is preferably substantially equal to the total thickness of the first group of lens elements along the optical axis. However, as shown in Figures 3c and 4c, the direction of birefringence in the 5.26 region of the optical axis 3 in the Burnett et al. Method is the same as that in the first method. The direction of birefringence in the region is completely opposite. Therefore, by using a second method that combines the first method and the method of Burnett et al., It is possible to achieve a good imaging effect that is virtually free of birefringence. By the second method, the plurality of lens elements 34-39 'in the projection optical system 4 丨 are used to make the optical axis of the first group of lens elements equal to the crystal axis [丨 〇〇] (or one crystal axis is optically Equal to the crystal axis [100]), so that the optical axis of the second group of lens elements is equal to the crystal axis [100] (or a crystal axis is optically equal to the crystal axis [100]), and the first group of lens elements And the second group of lens elements are rotated 45 with each other about this optical axis. . In addition, the optical axis of the third group of lens elements is equal to the crystal axis [111] (or a crystal axis is optically equal to the crystal axis [m]), and the optical axis of the fourth group of lens elements is equal to the crystal axis [丨丨 丨] (or a crystal axis is optically equal to the crystal axis [ill]), and the third group of lens elements and the fourth group of lens elements rotate by 60 with the optical axis as the main axis. . Here, the crystal axes that are optically equal to the crystal axis [m] are the crystal axes [_m], [1-11], and [114]. In the second method of the present invention, the third group lens element and the fourth group lens 7L have a positional relationship, and the fact that the optical axis is mainly rotated by 60 ° with each other represents that the optical axis is mainly oriented and pointed Predetermined crystal axis in a certain direction ~ -19 ~ This paper size is applicable to the home standard (C & S) A4 specification (2ι〇χ297 public love)-A7 ^ ---------- B7 V. Invention (17) _ (~ Π For example, the day-to-day axis [-111], [ii_ 丨] or [idi]) and the third group of lens elements and = four groups of transparent optical elements pointing in different directions The related angle is 60 in quality. . For example, with the optical axis as the main axis, the correlation angle between the crystal axis [-111] in the third group lens element and the crystal axis [丨 丨 丨] of the fourth group lens element is 60. . In addition, as shown in Figures 3a and 3b, when the crystal axis [丨 丨 丨] is equal to the optical axis, the cyclic asymmetry of the birefringence effect aligned with the center of the optical axis appears at intervals of 1. Thus, in this second method, there is a rotation of 60 relative to each other substantially with the optical axis as the king. The positional relationship represents that the lens element has a positional relationship that is substantially rotated by 60% (n * 120.), That is, the optical axis is rotated by 60 with each other as the main axis. , 180. , 300. ···· (where n is an integer). By this second method, it is preferable that the total thickness of the first group of lens elements along the optical axis and the total thickness of the second group of lens elements along the optical axis are substantially equal, and the first The total thickness of the three groups of lens elements is substantially equal to the total thickness of the fourth group of lens elements along the optical axis. In addition, as shown in FIGS. 3a and 3b, the optical axis of the lens element and the crystal axis [ill] are made equal, so the regions corresponding to the crystal axes [110], [101], and [011] are birefringent. When it is the maximum value, it is 12 °. The distance exists and the birefringence effect of the 3Θ distribution in the pupil plane, that is, the effect created on the image surface (wafer surface), similar to coma distortion, appears. In contrast, as shown in Figs. 4a and 4b, the optical axis of the lens element and the crystal axis [100] are made equal, so, corresponding to the regions of the crystal axis [101], Uoq], [110], and [· 101], When the birefringence is at its maximum, it is 90. The distance exists and has a birefringence effect with a 4Θ distribution in the pupil plane. ___ ^ 20. This paper size applies the Chinese National Standard (CNS) Α4 specification (210X297). ^ ---- 573315
出現。 在這情況中，垂直和水平圖案在圖案中最重要，應投射 土日ΕΪ圓上’而且因此如果有4 Θ分佈方式，則沒有與垂直和 水平圖案有關的例如像像散現象的效果發生，而且影像的 瓦解也不會很顯著。因此，藉由第三種方法，其中來自投 射光學系統複數個透鏡元件34-39中，至少一透鏡元件的光 軸和晶軸I： 1 00](或一晶軸在光學上等於該晶軸[丨〇〇])相 等，就有可能達到好的成像效果，同時有效地緩和雙折射 的效果。 如第一具體貫施例的第四種方法，利用投射光學系統4工 中的複數個透鏡元件34-39 ,使第五組透鏡元件的光軸相等 於晶軸[110](或是一晶軸在光學上等於晶軸[丨丨〇]),使第 六組透鏡元件的光軸相等於晶軸[U0](或是一晶軸在光學 上等於晶軸[1 10])，並且該第五組透鏡元件和第六組透鏡 元件彼此以該光軸為主旋轉90。。此處，在光學上等於q 軸[110]的晶軸為晶軸[-110]、[1〇1]、卜1〇1]、[〇11]= [01-1] 〇 圖5為一圖4，解釋本發曰㈣第四種方法，並顯示有關 於光束入射角的雙折射率分佈方式.藉由此第四種方法， 第五組透鏡元件的雙折射率分佈方式如圖5a所示，第二組透鏡元件的雙折射率分佈方式如圖5b所示。处里昨 〜取’弟五組 透鏡元件和第六組透鏡元件的雙折射率分佈方式結人， 成為:δσ圖5 C所示。 如圖5a和5b所示，藉由此第四種方法，相對於與該光軸 本纸張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐）appear. In this case, vertical and horizontal patterns are the most important in the pattern and should be projected on the earth's circle, and therefore if there is a 4 Θ distribution, no effects such as astigmatic phenomena related to the vertical and horizontal patterns occur, and The disintegration of the image will not be significant. Therefore, with the third method, in which the optical axis and crystal axis I of at least one lens element from the plurality of lens elements 34-39 of the projection optical system I: 1 00] (or a crystal axis is optically equal to the crystal axis [丨 〇〇]) equal, it is possible to achieve a good imaging effect, while effectively mitigating the effect of birefringence. As in the first specific implementation of the fourth method, a plurality of lens elements 34-39 in the process of the projection optical system are used to make the optical axis of the fifth group of lens elements equal to the crystal axis [110] (or a crystal The axis is optically equal to the crystal axis [丨 丨 〇]), so that the optical axis of the sixth group of lens elements is equal to the crystal axis [U0] (or a crystal axis is optically equal to the crystal axis [1 10]), and the The lens elements of the fifth group and the lens elements of the sixth group are rotated by 90 with the optical axis as the main axis. . Here, the crystal axis that is optically equal to the q axis [110] is the crystal axis [-110], [1〇1], Bu 1〇1], [〇11] = [01-1] 〇 Figure 5 is a Figure 4 explains the fourth method of the present invention, and shows the birefringence distribution method of the incident angle of the light beam. With this fourth method, the birefringence distribution method of the fifth group of lens elements is shown in Figure 5a It is shown that the birefringence distribution of the second group of lens elements is shown in FIG. 5b. Yesterday, the birefringence distribution of the fifth group of lens elements and the sixth group of lens elements was combined and became: δσ shown in Figure 5C. As shown in Figures 5a and 5b, with this fourth method, relative to the optical axis, the paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm)
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線 -21 - 五、 發明説明（ 相寺的晶軸[110]之區域， ^ . „ . . ^ \ 成為一雙折射區域，在某一方 上，具有與極化相關的：：：：折射率，並在另-方向 古 田低的折射率（該方向與第一個 域二JL古。除1之外，對應到晶軸[1〇〇]和[010]的區 到日= 當高折射率的無雙折射區域。此外，對應 雙折射區域。 ，H，.《具有相當低折射率的無 =万面’如®5e所示’藉由以該光軸為主第五組透鏡 六㈣鏡元件彼此成9〇。旋轉，在第五組透鏡元 口 ：::組透“件結合成一整體中，在雙折射為最大值 •’貫質上沒有晶軸["〇]效果，並且接近光軸的區域， 變成具有中間折射率的無雙折射區域。也就是說，藉由第 方法有可此事貝上接收不到任何雙折射效果並能達 到良好的成像效果。 在本發明的第四種方法中’第五組透鏡元件和第六組透 鏡元件具有位置上的關係，彼此實質上以光軸為主旋轉 6〇。的事實’代表以光轴為主、指向某一方向的預定晶軸 (，如’晶抽[001]、[-1U]、[_11〇]或π_η])與第五組透 鏡7L件和第六組透鏡元件中指向不同方向的光轴之間的相 關角度’貫質上為90。。例如，以光軸為主，在第五組透 鏡兀件中的晶軸[00丨]與第六組透鏡元件中的晶軸[〇〇丨]之 間的相關角度為90。。 除此之外，如圖5a和5b所示，當晶軸[11〇]相等於該光 軸時，對準光軸中央的雙折射效果之循環不對稱以18〇。為 本紙張尺度適用中國國家標準(Cns) A4規格(210 X 297公爱) -22- 573315 A7 _ _ B7 五、發明説明（20 ) 間隔出現。因此，在此第四種方法中，具有彼此實質上以 光軸為主旋轉9 0 °的位置關係，代表該透鏡元件具有實質 上旋轉90° + (n*180°)的位置關係，也就是說彼此以該光軸 為主成90。、270°····(其中n為整數）。 在此第四種方法中，較好是沿著光軸的第五組透鏡元件 的總厚度與沿著光軸的第六組透鏡元件的總厚度，實質上 相等。特別是，藉由此第四種方法，雙折射的區域是在中 心（該光軸及該光軸附近），因此，較好應用到有一薄中央 區域的負透鏡。 在第一具體實施例中，有可能應用適當選自第一至第四 種方法其中之一。除此之外，也可能結合選自這四種方法 的複數個方法’來應用這些方法。因此，藉由第一具體實 施例，就有可能實現有良好成影效果但沒有雙折射效果的 投射光學系統，不論折射型投射光學系統中是否使用類似 像螢石的雙折射光學材料。 圖6是一圖表，概略顯示根據本發明第二具體實施例之 具有一光學系統的曝光裝置組成零件。在第二具體實施例 中’本發明應用到具有一折反射型投射光學系統的掃描投 射曝光裝置。如圖6所示，第二具體實施例的曝光裝置具 \ 有一照明裝置3 0 ,用於照明主光罩（光罩）3 i，與第一具體 實施例相同。 照明裝置30具有一光源，該光源具有一 F2雷射，提供 157 nm波長的光線，一光學整合器，形成來自光源光預定 形狀（圓形、環形、有雙極的 '四極或類似形狀）的第二光 -23- 本紙張尺度適用f國國家標準(CNS) A4規格(210X 297公ϋ---- 573315 A7 B7 五、發明説明（21 ) 源，以及一照明範圍孔徑遮光，用以限制在主光罩3丨上的 照明區域’並利用接近強度一致的分佈方式，照射主光罩 3 1上的照明區域。 在照明裝置3 0之内的照明光程，較好利用純氣清洗，在 本具體實施例中使用氮氣清洗。主光罩31安裝在主光罩台 32上，而且主光罩31和主光罩台32利用外罩33與外面大氣 隔離。較好也利用惰性氣體潔淨外罩33内的空間，在本具 體實施例中此空間利用氮氣潔淨。 由照明裝置30照射的主光罩31之光線，經由一折反射型 投射光學系統62，導引到一晶圓42，作為一光敏性基板。 投射光學系統62有第一成像光學系統（50-54)，以主光罩3 1 光線為基礎，在主光罩3 1上形成一圖案的中間影像，以及 一第二成像光學系統（55-61)，在晶圓42的曝光區域之内， 以來自此中間影像的光線為基礎，重新描纟會中間影像的影 像（最終影像）。 弟一成像光學系統（5 0 - 5 4)具有一透鏡元件$ 〇，沿著一第 一光軸ΑΧ 1排列’ 一光程折疊式反射鏡5 1，具有一反射表 面可反射通過該透鏡元件50的光線，透鏡元件52和53沿著 第二光軸AX2排列，該第二光軸以預巧角度（例如，9〇_ 135。）與該第一光軸AX1交又，以及一凹面反射鏡54。 在第一成像光學系統中（50-54)，光程折疊式反射鏡$ 1的 反射表面所反射的光線，在通過透鏡元件52和53之後，會 由凹面反射鏡54反射，再次通過透鏡元件53和52，並導向 光考王折受式反射知51的其他反射表面。此外，在主光罩Μ -24-Line -21-V. Description of the invention (The area of the crystal axis [110] of Xiangsi, ^. „.. ^ \ Becomes a birefringent region, which on one side has polarization-related :::: refractive index And a low refractive index in the other-direction Gutian (this direction is different from the first domain II JL ancient. Except 1, the area corresponding to the crystal axis [100] and [010] to day = when the high refractive index The birefringence-free region. In addition, it corresponds to the birefringence region., H ,. "None with a very low refractive index = 10,000 planes, as shown in ®5e, by using this optical axis as the fifth group of six-lens mirror elements. 90 ° to each other. Rotate, in the fifth group of lens elements ::: group through "combined into a whole, the maximum birefringence is" • no crystal axis [" 〇] effect on the mass, and close to light The area of the axis becomes a birefringence-free area with an intermediate refractive index. That is, according to the first method, no birefringence effect can be received on this matter, and a good imaging effect can be achieved. In the fourth aspect of the present invention, In the method, the lens elements of the fifth group and the lens elements of the sixth group have a positional relationship and are substantially mutually The fact that the optical axis is mainly rotated by 60 ° represents a predetermined crystal axis that is mainly optical axis and points in a certain direction (such as' crystal pumping [001], [-1U], [_11〇] or π_η]) The correlation angle between the 7L element of the fifth group lens and the optical axis of the sixth group of lens elements pointing in different directions is 90 in nature. For example, the optical axis is the main component in the fifth group of lens elements. The correlation angle between the crystal axis [00 丨] and the crystal axis [〇〇 丨] in the sixth group of lens elements is 90. In addition, as shown in FIGS. 5a and 5b, when the crystal axis [11〇] When the optical axis is equal to the optical axis, the cyclic asymmetry of the birefringence effect aligned with the center of the optical axis is 180. For this paper standard, the Chinese National Standard (Cns) A4 specification (210 X 297 public love) -22- 573315 A7 _ _ B7 V. Description of the invention (20) appears at intervals. Therefore, in this fourth method, there is a positional relationship that is rotated by 90 ° with the optical axis as the main axis, which represents that the lens element has substantially rotated 90 ° + (n * 180 °), that is, the optical axis is 90 °, 270 ° (where n is an integer). In this fourth method, Fortunately, the total thickness of the fifth group of lens elements along the optical axis is substantially equal to the total thickness of the sixth group of lens elements along the optical axis. In particular, by this fourth method, the area of birefringence is In the center (the optical axis and the vicinity of the optical axis), it is better to apply to a negative lens with a thin central area. In the first specific embodiment, it is possible to apply an appropriate one selected from the first to fourth methods. 1. In addition, it is also possible to apply these methods in combination with a plurality of methods selected from the four methods. Therefore, with the first specific embodiment, it is possible to achieve a good image formation effect but no birefringence effect. , Regardless of whether or not birefringent optical materials like fluorite are used in refractive optical systems. Fig. 6 is a diagram schematically showing components of an exposure apparatus having an optical system according to a second embodiment of the present invention. In the second embodiment, the present invention is applied to a scanning projection exposure apparatus having a fold reflection type projection optical system. As shown in FIG. 6, the exposure device of the second embodiment has a lighting device 30 for illuminating the main photomask (photomask) 3i, which is the same as the first embodiment. The illuminating device 30 has a light source, which has an F2 laser, which provides light at a wavelength of 157 nm, and an optical integrator, which forms a predetermined shape (circular, circular, bipolar 'quadrupole, or the like) from the light source. Second light-23- This paper size is applicable to National Standards (CNS) A4 specifications (210X 297 Gong ---- 573315 A7 B7) V. Description of the invention (21) source, and a lighting range aperture shading to limit The illumination area on the main mask 3 ′ is illuminated with a uniform intensity distribution pattern to illuminate the illumination area on the main mask 31. The light path of the illumination within the illumination device 30 is preferably cleaned by pure gas. In this specific embodiment, nitrogen is used for cleaning. The main mask 31 is mounted on the main mask stage 32, and the main mask 31 and the main mask stage 32 are isolated from the outside atmosphere by the outer cover 33. It is also preferable to clean the outer cover with an inert gas. The space inside 33 is cleaned with nitrogen in this embodiment. The light from the main mask 31 illuminated by the lighting device 30 is guided to a wafer 42 through a fold reflection type projection optical system 62 as a Photosensitive substrate. The radiation optical system 62 has a first imaging optical system (50-54), based on the light of the main mask 31, forming a patterned intermediate image on the main mask 31, and a second imaging optical system (55- 61), within the exposure area of wafer 42, based on the light from this intermediate image, re-tracing the image (final image) of the intermediate image. The first imaging optical system (50-54) has a Lens element $ 0, arranged along a first optical axis AX1 'An optical path folding mirror 51, having a reflecting surface to reflect light passing through the lens element 50, and lens elements 52 and 53 along the second light The axis AX2 is aligned, the second optical axis intersects the first optical axis AX1 at a pre-designed angle (for example, 90-135.), And a concave mirror 54. In the first imaging optical system (50-54 ), The light reflected by the reflecting surface of the optical path folding mirror $ 1, after passing through the lens elements 52 and 53, will be reflected by the concave mirror 54, pass through the lens elements 53 and 52 again, and guide the light test king to receive Other reflection surfaces of the type reflection know 51. In addition, the main photomask M -24-
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上圖案的中間影像，在此光程折疊式反射鏡51的另—反射 表面附近形成。 第二成像光學系統（55-61)具有複數個透鏡元件55_6〇， 沿著第一光軸AX1排列，以及一孔徑遮光61，用於控制相 干因數（σ值），以第一成像光學系統（50-54)形成的中間影 像之光線為基礎，在晶圓42曝光區域的主光罩31上形成一 第二圖案影像。此種投射光學系統揭示於，例如圖$的美 國專利5,805,334號和日本開放專利出版品2〇〇〇-47114號 中。 較好是此投射光學系統62中的投射光程係利用惰性氣體 潔淨，在本具體實施例中該光程利用氦氣潔淨。晶圓42安 裝在晶圓台43上，而且晶圓42和晶圓台43利用外罩44與外 面大氣隔離。較好也利用鈍氣潔淨外罩44内的空間，在本 具體實施例中此空間利用氮氣潔淨。 此外，主光罩台32和晶圓台43根據投射光學系統62的放 大速率，相對於投射光學系統62來加以移動，在主光罩31 上的圖案藉由照射主光罩3丨轉移到晶圓42上的曝光區域。 在第二具體實施例中，使折反射型投射光學系統中複數 個透鐃元件52、53和55-60由螢石做成（氟化鈣）。因此，在 第二具體實施例中，也有可能利用選自第一具體實施例中 所解釋的第一至第四種方法中任一方法。除此之外，也可 能利用選自這四種方法之複數個方法之組合。因此，藉由 第二具體實施例，事實上就有可能實現有良好成影效果但 /又有雙折射效果的投射光學系統，不論折射型投射光學系 ______ -25- 本紙張尺度適财S g家標準(CNS) Μ規格㈣χ297公爱）The intermediate image of the upper pattern is formed near the other reflection surface of the optical path folding mirror 51. The second imaging optical system (55-61) has a plurality of lens elements 55_60, arranged along the first optical axis AX1, and an aperture shading 61 for controlling the coherence factor (σ value), and the first imaging optical system ( 50-54) Based on the light of the intermediate image formed, a second pattern image is formed on the main mask 31 in the exposed area of the wafer 42. Such a projection optical system is disclosed in, for example, U.S. Patent No. 5,805,334 and Japanese Open Patent Publication No. 2000-47114. Preferably, the projection optical path in the projection optical system 62 is cleaned with an inert gas, and in this embodiment, the optical path is cleaned with helium. The wafer 42 is mounted on a wafer stage 43, and the wafer 42 and the wafer stage 43 are isolated from the outside atmosphere by a cover 44. It is also preferable to clean the space inside the outer cover 44 with inert gas. In this embodiment, this space is cleaned with nitrogen. In addition, the main mask stage 32 and the wafer stage 43 are moved relative to the projection optical system 62 according to the magnification rate of the projection optical system 62, and the pattern on the main mask 31 is transferred to the crystal by irradiating the main mask 3 丨Exposed area on circle 42. In the second embodiment, a plurality of translucent elements 52, 53 and 55-60 in the refracting type projection optical system are made of fluorite (calcium fluoride). Therefore, in the second specific embodiment, it is also possible to use any one method selected from the first to fourth methods explained in the first specific embodiment. In addition, it is also possible to use a combination of a plurality of methods selected from the four methods. Therefore, with the second specific embodiment, in fact, it is possible to realize a projection optical system with a good image forming effect and / or a birefringence effect, regardless of the refractive projection optical system ______ -25 g-house standard (CNS) M specification (㈣297)
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f中疋否使用類似像螢石的雙折射光學材料，和第—且麵 貫施例一樣。、在此笼-目μ — 、月豆 光…“ 貫施例中，當在作用如折射型 子構件的兩個負透鏡元件52和53中使用該第四種方法 時，其中㈣件排列在由凹面反射鏡54形 中，仍可獲得較佳的結果，因為藉由這第四種方 射區域是位於中央（該光軸或接近該光軸處）。 以在以上所討論每一具體實施例中，鈣化氟晶體（螢石）用 來當作具有雙折射的光學材料，但這僅作為說明而非限制 用，因為也可以使用其他的單一軸晶骨豊，例如鎖化氣晶體 (BaF〇、鋰化氟晶體（LiF)、鈉化氟晶體卜鳃化氟晶 m(SrF2)、鈹化氟晶體（BeF2)或其他類似材料，或其他對 紫外線而言為透明的晶體材料。在這情況中，氟化鋇 (BaF2)或其他類似材料的晶軸方向，較好是根據本發明加 以設定。 & 在上述每一具體實施例的曝光裝置中，都可以利用照明 裝置照射主光罩（光罩）以製造微裝置（半導體裝置、成像裝 置液日日顯示备裝置、薄膜磁頭或相似之物）（照明流程）， 並利用投射光學系統將在光罩上形成的圖案曝光到光敏性 基板上（曝光流程）^以下，一範例用來解釋一方法，該方 法使用每一具體實施例的曝光裝置，在作為光敏性基板的 晶圓或相似之物上形成預定的電路圖案，以取得作為微裝 置的半導體裝置，請參見圖7的流程圖。 首先，在圖7的步驟S301中，一金屬膜沉積至一批晶圓 上。在後來的步驟S302中，光阻塗佈在此批晶圓的金屬膜 -26- 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐) '〜-- 573315 A7 B7 五、發明説明（ 24 上。在這之後，在步驟S303中，光罩上的圖案影像，使用 每一具體實施例的曝光裝置，經由投射光學系統連續在該 批晶圓上的每一投射區中轉移並曝光。在這之後，在步騾 S304中，沖洗掉該批晶圓上的光阻，之後在步驟§3〇5中， 藉由將抗蚀劑圖案蝕刻成該批晶圓上的光罩，一對應到光 罩上圖案之電路圖案，在每一晶圓的每一投射區上形成。 在這之後，另在連續層上完成電路圖案的形成，製造出 例如像半導體裝置或相似之物的裝置。透過上述半導體裝 置製造方法，有可能取得具有極佳電路圖案的半導體裝置 之良好生產量^在步驟幻01至83〇5中，金屬沉積在晶圓 上，以抗蝕劑塗佈金屬膜、以及完成各種不同的曝光、顯 影和蝕刻流程，但是自然也可接受在這些流程之前先在晶 圓上开^成氧化石夕膜，用抗蚀劑塗佈此氧化;ί夕膜，然後完成 曝光、顯影和银刻的各種程序。 除此之外’藉由每一具體實施例的曝光裝置，在一板 (玻璃基板）上形成預定的圖案（電路圖案、電極圖案或相似 之物），也可取得一液晶顯示器裝置作為微裝置。以下， 解釋這類方法的範例，請參見圖8的流程圖。在圖8的圖案 形成程序40 1中，完成所謂的光學微影《呈序，其中使用任 一具體實施例的曝光裝置將光罩圖案轉移並曝光到光敏性 基板（一玻璃基板或塗佈抗蝕劑的類似基板）上。透過此一 光學的微影程序，包含多個電極或類似之物的預定圖案在 感光性基板上形成。在這之後，預定的圖案透過各種不同 的程序在基板上形成，藉由讓曝光的基板進行顯影流程、In f, whether or not a birefringent optical material like fluorite is used is the same as in the first embodiment. "In this cage-mesh μ-, moon bean light ..." In this embodiment, when the fourth method is used in two negative lens elements 52 and 53 that act as a refraction type sub-member, the files are arranged in From the shape of the concave mirror 54, better results can still be obtained, because by this fourth square radiation area is located at the center (the optical axis or near the optical axis). For each specific implementation discussed above, In the example, calcified fluorine crystal (fluorite) is used as an optical material with birefringence, but this is only for illustration and not limitation, because other uniaxial crystal epiphyses can also be used, such as lock gas crystal (BaF 〇 Lithium fluoride crystal (LiF), sodium fluoride crystal, gallium fluoride crystal (SrF2), beryllium fluoride crystal (BeF2) or other similar materials, or other crystalline materials that are transparent to ultraviolet light. Here In this case, the crystal axis direction of barium fluoride (BaF2) or other similar materials is preferably set according to the present invention. &Amp; In the exposure apparatus of each of the above specific embodiments, the main photomask can be illuminated by the illumination device (Mask) to make microdevices (semiconductor (Image display device, thin-film magnetic head or the like) (lighting process), and the projection optical system is used to expose the pattern formed on the photomask to the photosensitive substrate (exposure process) ^ below, a An example is used to explain a method that uses the exposure device of each embodiment to form a predetermined circuit pattern on a wafer or the like as a photosensitive substrate to obtain a semiconductor device as a micro device, see FIG. 7 is a flowchart. First, in step S301 of FIG. 7, a metal film is deposited on a batch of wafers. In a subsequent step S302, a photoresist is coated on the metal films of this batch of wafers. The scale applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) '~-573315 A7 B7 V. Description of the invention (24). After that, in step S303, the pattern image on the photomask uses each An exposure apparatus of a specific embodiment continuously transfers and exposes each projection area on the batch of wafers through a projection optical system. After that, in step S304, the photoresist on the batch of wafers is washed out. after that In step §305, a resist pattern is etched into a mask on the wafers, and a circuit pattern corresponding to the pattern on the mask is formed on each projection area of each wafer. After that, the formation of a circuit pattern is completed on another continuous layer, and a device such as a semiconductor device or the like is manufactured. Through the above-mentioned semiconductor device manufacturing method, it is possible to obtain a good throughput of a semiconductor device having an excellent circuit pattern ^ In steps 01 to 8305, metal is deposited on the wafer, a metal film is coated with a resist, and various different exposure, development, and etching processes are completed, but it is naturally acceptable to crystallize the wafers before these processes. An oxide film is formed on the circle, and the oxide is coated with a resist; the film is then completed, and various processes of exposure, development and silver engraving are completed. In addition to this, with the exposure device of each embodiment, a predetermined pattern (circuit pattern, electrode pattern, or the like) is formed on a plate (glass substrate), and a liquid crystal display device can also be obtained as a micro device. . Examples of such methods are explained below, see the flowchart of FIG. 8. In the pattern forming process 401 of FIG. 8, a so-called optical lithography process is completed, in which a photomask pattern is transferred and exposed to a photosensitive substrate (a glass substrate or a coated Etch-like substrate). Through this optical lithography process, a predetermined pattern including a plurality of electrodes or the like is formed on a photosensitive substrate. After that, a predetermined pattern is formed on the substrate through a variety of different procedures. By exposing the exposed substrate to a development process,
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姓刻流程、光罩移除流程等等，之後即完成色彩滤波器形 成程序402。 在色彩滤波器形成程序4〇2中，形成一個色彩滤波器， 其中對應到R(紅色的）、G(綠色的(藍色的）的複數個 三點群組，排列成矩陣形狀，或複數個R、〇和3條紋的群 組濾波器，以水平掃描線方向排列。此外，在色彩濾波器 形成程序402之後，完成一單元組合程序4〇3。在單元組合 私序403中，組裝一液晶面板（液晶單元），使用的基板具 有在圖案形成程序401中所獲得的預定圖案，以及在色彩 濾波器形成程序402中所獲得的色彩濾波器。在單元組合 程序4 0 3中，|皆由噴射出液晶材料，例如，在具有圖案形 成程序401中所獲得的預定圖案、以及在色彩濾波器形成 程序402中所獲得的色彩濾波器之基板之間，以產生一液 晶面板（液晶早元）。 在這之後，在模組組合程序4〇4中，藉由附上各種零 件，包括一背光和導致組裝的液晶面板（液晶單元）的顯示 動作之電子電路，以完成液晶顯示裝置。透過上述液晶顯 示裝置製造方法，有可能取得具有極佳電路圖案的液晶顯 示裝置之良好生產量。 在每一上述具體實施例中，本發明應用到安裝在一曝光 裝置中的投射光學系統，但這僅用來說明而非限制，可用 於本發明也可應用到其他一般光學系統。除此之外，在上 述具體實施例中，使用可提供光波長157 ηπι的ρ2雷射光 源’但這僅用來說明而非限制，因也可使用，例如可提供 -28- 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公爱)Last name engraving process, mask removal process, and so on, and then the color filter forming process 402 is completed. In the color filter forming program 402, a color filter is formed, in which a plurality of three-point groups corresponding to R (red) and G (green (blue)) are arranged in a matrix shape or a complex number. A group filter of R, 0, and 3 stripes is arranged in the horizontal scanning line direction. In addition, after the color filter forming program 402, a unit combination program 403 is completed. In the unit combination private sequence 403, one is assembled A liquid crystal panel (liquid crystal cell) using a substrate having a predetermined pattern obtained in the pattern forming program 401 and a color filter obtained in the color filter forming program 402. In the cell combination program 403, | The liquid crystal material is ejected, for example, between a substrate having a predetermined pattern obtained in the pattern forming program 401 and a color filter obtained in the color filter forming program 402 to produce a liquid crystal panel (liquid crystal early cell) ). After that, in the module assembly program 400, by attaching various parts, including a backlight and the display action of the assembled liquid crystal panel (liquid crystal cell), Sub-circuits to complete the liquid crystal display device. Through the above-mentioned liquid crystal display device manufacturing method, it is possible to obtain a good throughput of a liquid crystal display device with an excellent circuit pattern. In each of the above specific embodiments, the present invention is applied to a The projection optical system in the exposure device, but this is only for illustration and not limitation, and can be used in the present invention and can be applied to other general optical systems. In addition, in the above specific embodiment, the light wavelength 157 ηπ can be used. Ρ2 laser light source 'but this is only for illustration and not limitation, it can also be used, for example, it can provide -28- This paper size applies to China National Standard (CNS) A4 specification (210 X 297 public love)
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573315 A7 ___ B7 五、發明説明（26 ) 光波長為193 11111的/^17準分子雷射光源，或提供光波長 126 nm的Ar2雷射光源。 [本發明的功效] 如上冒解釋，藉由本發明，可以實現一種光學系統，該 系統不接收雙折射的效果，但具有良好光學效果，即使是 使用例如像螢石其本質上具有雙折射特性的光學材料也一 樣。因此，藉由將本發明的光學系統結合至一曝光裝置 中，有可能經由高辨識率投射光學系統的高精確投射曝 光，製造出好的微裝置。 [圖示簡單說明] [圖1] 圖1是一圖表，概略顯示根據本發明第一具體實施例之 具有一投射光學系統的曝光裝置之組成零件。 [圖2] 圖2是一圖表，解釋螢石的晶軸方向。 [圖 3(a)〜圖 3(c)] 圖3(a)〜3(c)為一圖表，解釋Burnett等人的方法，並顯 示有關光束入射角的雙折射率分佈方式。 [圖 4(a)〜圖 4(c)] 、 圖4(a)〜4(c)為一圖表，解釋本發明的第一種方法，並 顯示有關光束入射角的雙折射率分佈方式。 [圖 5(a)〜圖 5(c)] 圖5(a)〜5(c)為一圖表，解釋本發明的第四種方法，並 顯示有關光束入射角的雙折射率分佈方式。 -29- 本紙張尺度適财國國家標準(CNS) A4规格U10 X297公g " ---- 573315 A7 B7 五、發明説明（27 ) [圖6] 圖6是一圖表，概略顯示根據本發明第二具體實施例之 具有一光學系統的曝光裝置組成零件。 [圖7] 圖7是一流程圖，用以取得一半導體裝置當作一微裝置 的方法。 [圖8] 圖8是一流程圖，用以取得一液晶顯示器裝置當作一微 裝置的方法。 [符號解釋] 30 曝光裝置 31 主光罩 34-39透鏡元件 4 1 投射光學系統 40,61 孔徑遮光 42,62晶圓 5 1 光程折疊式反射鏡 54 凹面反射鏡 32,53透鏡元件 \ 55-60透鏡元件 -30- 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐)573315 A7 ___ B7 V. Description of the invention (26) / ^ 17 excimer laser light source with a light wavelength of 193 11111, or an Ar2 laser light source with a light wavelength of 126 nm. [Effect of the present invention] As explained above, with the present invention, an optical system can be realized. The system does not receive the effect of birefringence, but has a good optical effect, even when using, for example, fluorite, which has birefringent properties in nature. The same goes for optical materials. Therefore, by incorporating the optical system of the present invention into an exposure device, it is possible to manufacture a good microdevice by projecting exposure with high accuracy through a high-recognition projection optical system. [Brief description of the drawings] [Fig. 1] Fig. 1 is a diagram schematically showing the components of an exposure apparatus having a projection optical system according to a first embodiment of the present invention. [Fig. 2] Fig. 2 is a graph explaining the crystal axis direction of fluorite. [Figs. 3 (a) to 3 (c)] Figs. 3 (a) to 3 (c) are diagrams explaining the method of Burnett et al. And showing the birefringence distribution of the incident angle of the beam. [Figs. 4 (a) to 4 (c)] and Figs. 4 (a) to 4 (c) are diagrams explaining the first method of the present invention, and showing the birefringence distribution method regarding the incident angle of the light beam. [Figs. 5 (a) to 5 (c)] Figs. 5 (a) to 5 (c) are diagrams explaining the fourth method of the present invention, and showing the birefringence distribution method regarding the incident angle of the light beam. -29- This paper is a national standard (CNS) A4 specification U10 X297 g " ---- 573315 A7 B7 V. Description of the invention (27) [Figure 6] Figure 6 is a chart showing A second embodiment of the invention is a component of an exposure device having an optical system. [Fig. 7] Fig. 7 is a flowchart for a method for obtaining a semiconductor device as a micro device. [Fig. 8] Fig. 8 is a flowchart for a method for obtaining a liquid crystal display device as a micro device. [Explanation of symbols] 30 exposure device 31 main mask 34-39 lens element 4 1 projection optical system 40, 61 aperture shading 42, 62 wafer 5 1 optical path folding mirror 54 concave mirror 32, 53 lens element \ 55 -60 lens element -30- This paper size applies to China National Standard (CNS) A4 (210 X 297 mm)
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| JP2001162386 | 2001-05-30 | ||
| JP2001243319A JP2003050349A (en) | 2001-05-30 | 2001-08-10 | Optical system and exposure system provided with the optical system |
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| DE10210782A1 (en) * | 2002-03-12 | 2003-10-09 | Zeiss Carl Smt Ag | Lens with crystal lenses |
| DE10123725A1 (en) | 2001-05-15 | 2002-11-21 | Zeiss Carl | Objective for microlithographic projection, includes lens element with axis perpendicular to specified fluoride crystal plane |
| KR20040015251A (en) | 2001-05-15 | 2004-02-18 | 칼 짜이스 에스엠티 아게 | Objective with fluoride crystal lenses |
| US6683710B2 (en) | 2001-06-01 | 2004-01-27 | Optical Research Associates | Correction of birefringence in cubic crystalline optical systems |
| US6844972B2 (en) | 2001-10-30 | 2005-01-18 | Mcguire, Jr. James P. | Reducing aberration in optical systems comprising cubic crystalline optical elements |
| US6970232B2 (en) | 2001-10-30 | 2005-11-29 | Asml Netherlands B.V. | Structures and methods for reducing aberration in integrated circuit fabrication systems |
| US7453641B2 (en) | 2001-10-30 | 2008-11-18 | Asml Netherlands B.V. | Structures and methods for reducing aberration in optical systems |
| US6995908B2 (en) | 2001-10-30 | 2006-02-07 | Asml Netherlands B.V. | Methods for reducing aberration in optical systems |
| US7292388B2 (en) | 2002-05-08 | 2007-11-06 | Carl Zeiss Smt Ag | Lens made of a crystalline material |
| US7072102B2 (en) | 2002-08-22 | 2006-07-04 | Asml Netherlands B.V. | Methods for reducing polarization aberration in optical systems |
| JPWO2004090954A1 (en) * | 2003-04-01 | 2006-07-06 | 株式会社ニコン | Holding device, optical system, exposure apparatus, and exposure method |
| JP2006173305A (en) | 2004-12-15 | 2006-06-29 | Canon Inc | Aligner and its method, and device manufacturing method |
| KR20070105976A (en) * | 2005-02-25 | 2007-10-31 | 칼 짜이스 에스엠티 아게 | Optical system, in particular objective or illumination system for a microlithographic projection exposure apparatus |
| WO2007060834A1 (en) * | 2005-11-24 | 2007-05-31 | Nikon Corporation | Optical integrator, illumination optical device, exposure device, and device manufacturing method |
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| JP2000331927A (en) * | 1999-03-12 | 2000-11-30 | Canon Inc | Projection optical system and projection aligner using the same |
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