TW573298B - Method to produce a hybrid-disk and said hybrid-disk - Google Patents

Method to produce a hybrid-disk and said hybrid-disk Download PDF

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TW573298B
TW573298B TW89109001A TW89109001A TW573298B TW 573298 B TW573298 B TW 573298B TW 89109001 A TW89109001 A TW 89109001A TW 89109001 A TW89109001 A TW 89109001A TW 573298 B TW573298 B TW 573298B
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layer
manufacturing
layer system
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TW89109001A
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Martin Dubs
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Balzers Hochvakuum
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
    • G11B7/254—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of protective topcoat layers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
    • G11B7/257—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/26—Apparatus or processes specially adapted for the manufacture of record carriers
    • G11B7/266—Sputtering or spin-coating layers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
    • G11B7/257—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers
    • G11B2007/25705—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers consisting essentially of inorganic materials
    • G11B2007/2571—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers consisting essentially of inorganic materials containing group 14 elements except carbon (Si, Ge, Sn, Pb)
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
    • G11B7/257—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers
    • G11B2007/25705—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers consisting essentially of inorganic materials
    • G11B2007/25713—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers consisting essentially of inorganic materials containing nitrogen
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
    • G11B7/257—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers
    • G11B2007/25705—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers consisting essentially of inorganic materials
    • G11B2007/25715—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers consisting essentially of inorganic materials containing oxygen
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B2220/00—Record carriers by type
    • G11B2220/20—Disc-shaped record carriers
    • G11B2220/23—Disc-shaped record carriers characterised in that the disc has a specific layer structure
    • G11B2220/235—Multilayer discs, i.e. multiple recording layers accessed from the same side
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
    • G11B7/258—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of reflective layers

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Manufacturing Optical Record Carriers (AREA)
  • Physical Vapour Deposition (AREA)
  • Optical Record Carriers And Manufacture Thereof (AREA)
  • Transition And Organic Metals Composition Catalysts For Addition Polymerization (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)

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573298 經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明說明（f ) 本發明係關於混合式碟片之製造方法，此種碟片包 括：在所設之頻帶中是透明之第一基板；第一基板下方 之在所設之頻帶中是半透明之層系統；此層系統下方之 在所設頻帶中是透明之另一基板；最後是基板下方之反 射層系統。 此處可參考這些國際上之調查硏究領域中所發現之文 件，即； —EP 0 5 1 6 1 7 8 (JP 43 5 3 64 1 ) —EP 0 762 406 (US 5 965 22 8; WO 9709715: JP 9265659) —JP 0714696 (Patent Abstract of Japan Vol. 1995，No. 0 9, 31. Oktober 1 995 ) —EP 0 4 6 7 7 05 (US 5 49 0 1 3 1; JP-43 64248) —US 5 4 5 0 3 8 0 —EP 0 834 874 ， 就本發明而言，不須分別說明上述各文件之意義。 第1圖顯示一種混合式碟片之一般構造，其一般稱爲 SuperAudioCD。此種碟片具有透明之第一基板，第一基 板之一面A!裸露在周圍大氣中，其位於內部之第二面 A1/2是半透明之層系統，此面A]/2以其位於內部之面A2/3 緊靠在黏合層3。黏合層3之內面A3/5緊靠在透明之另一 基板5，基板5之內面A5/6緊靠在反射層系統6。此反射 層系統6通常藉由保護層8 (例如，保護用光阻層）使與 周圍大氣隔開而受到保護。 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 裝----K----1T— -------： (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 573298 A7 __ B7 五、發明說明（> ) 空氣相對濕度95%時加熱至30°會使徑向偏移足足地改 變 1.2° 。 基本上已爲人所知者是：藉由濕氣保護層使儲存用碟 片之基板受到保護而不受濕氣所影響。因此使用塗層方 法來施加此種濕氣保護層，此種層不能適應於混合式碟 片之產品規律性，這是因爲此種層取代了 一種保護光阻 或真空塗層技術，真空塗層技術基本上（特別是塗層時 間）是與施加其餘之層系統至混合式碟片時所用之技術 不同的。真空塗層法之形式有以下各種： 一濺鍍’其反應性或非反應性地與所有習知之供電技 術有關’即，與DC(直流）供電，AC(交流）+ DC供電， AC供電或脈波式DC供電技術有關，這些供電技術 可爲磁場促進式或它種形式。 一電弧蒸發法，其是藉由使用低壓-高電流電弧放電， 藉此可使靶材料在流動性之足點熔化（電弧蒸發）， 亦可爲反應性或非反應性，受磁場影響或不是以磁 場來進行， 一熱蒸發，例如，電極輻射蒸發，反應性或非反應性， 一 CVD方法，其中材料在不須電漿來促進之情況下由 氣相沈積而成。 一電漿聚合。 PECVD方法原貝[J上稱爲混合式方法，其中例如在反應 性濺鍍時電漿促進之塗層材料是由氣相沈積而成。 若在本說明書之範圍中提及相同型式之真空塗層方 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） -----------裝-----^----訂---------- (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 573298 A7 B7 五、發明說明（4) 法，則是指上述之型式。 本發明之目的中之一是提供本文開頭所述型式之方 法，其可簡易地整合在混合式碟片之現有之製程中。 在本文開頭所述之方法中，其設有以相同型式之真空 塗層方法所製成之半透明之層系統以及一個反射層系 統，則本發明之目的是以下述方式達成：在第一基板上 施加一種在上述頻譜（特別是600nm至80〇nm )中之透 明之濕氣保護系統，其中至少一層是以真空塗層方法來 製成，此種塗層方法亦屬和上述相同之型式。 若考慮到這些混合式碟片是以Inline序列而由塗層過 程（就像施加上述反射層系統和半透明之層系統一樣） 所製成，則明顯的是若依先前方式來進行時設備組態及 時脈控制器都可獲得重大之優點。 此外，依據先前已知之技藝，濕氣保護層藉由一些方 法（其例如需要多個處理步驟）而施加在各儲存碟片上， 這些處理步驟不易自動化且較不易控制，例如，不易藉 由熱處理，液態塗層法，自旋（spin)塗層法等等來控制， 或不易藉由電漿預處理、塗層法、熱處理等等來控制。 本發明之另一目的是提供一種本文開頭所述形式之方 法’此方法可解決上述有關濕氣之問題以及碟片之彎曲 現象。此方法具有高效率且較容易自動化及容易控制。 本文開頭所述方法之特徵是：在透明之第一基板上藉 由濺鍍法而施加一種在上述頻譜範圍中之透明之濕氣保 護層系統，其由至少一層所構成。 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） ^裝—^—訂--------- (iif先閱讀背面之注意事項再填寫本頁) 573298
經濟部智慧財產局員工消費合作社印製 A7 B7 i、發明說明（r) 本發明之第三目的是有效地解決上述與濕氣有關之彎 曲問題。 這在本文開頭所述之方法中是以下述方式達成：在透 明之基板上施加一種濕氣保護層系統，其包含至少一層 由低於化學計量之氧化矽所構成之層及/或至少一層由 氮氧化砂所構成之層。 較佳是使用至少二種上述之解法，因此 一使用一種此碟片製造方法中已使用之塗層方法， 一藉由濺鍍法而施加一種濕氣保護層系統， 一施加一種由氮氧化矽及/或低於化學計量之氧化矽 所構成之濕氣保護層系統。 至少以成對（pair)方式組合地使用或三種方式相組合 地使用。 爲了防止：依據第1圖而施加上述之濕氣保護層系統 於基板表面A !時由於基板前側上之反射所造成之明顯之 雷射信號損耗’則此材料之折射率或濕氣保護層系統之 材料之折射率須選擇成最多等於透明之第一基板材料之 折射率，此種折射率η特別是在1 ·4 7 S η $ 1 . 7之範圍中。 較佳是1 · 5 g n S 1 · 6 特別好之情況是n S 1 . 5 7 其中須考慮傳統之基板材料，例如，聚碳酸鹽之折射 率 n s = 1 . 5 7 〇 此外，爲了使施加濕氣保護層系統時所產生之吸收性 損耗最小化，則須選取一種消滅常數是k之材料作爲濕 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） ------------裝-----^----訂—.------ (請先閱讀背面之注意事項再填寫本頁) 573298 經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明說明（b) 氣保護層系統之材料，其中 1〇·4^ 5xl〇·3 較佳是 kg ΙΟ·3 若此濕氣保護層系統是藉由濺鍍法施加而成，則較佳 是在含氧之大氣中藉由矽靶（tar get)之反應性濺鍍來製 成。 爲了製成一種氮氧化矽層，則另外須使用氮作爲反應 性氣體。因此，反應性氣體混合物中此氮之成份較大是 需要的，以便大大地改變此層之化學計量。此外，使氮 添加至反應性氣體可提高此濺鍍過程之穩定性，這是因 爲靶之毒性可藉由氧而變小。此外，相同形式之塗層是 較佳的，其允許在相同之作用下沈積較薄之層。可藉由 氧化矽和氮氧化矽依時間分段施加來製成此濕氣保護層 系統，需要時須以流動性之過渡區藉由反應性氣體成份 之適當控制來製成。 在施加此種由低於化學計量之氧化矽及/或由氮氧化 矽所構成之濕氣保護層系統時，這些材料之厚度至少是 1 Ο n m，較佳是：最多是5 Ο n m。 在使用低於化學計量之氧化矽作爲濕氣保護層系統之 材料時遵守上述光學常數η和k可藉由準確地遵守SixOY 層中所期望之化學計量X/Y來達成，這較佳是在追蹤此 塗層過程時藉由電漿放射用之監視器及/或藉由測量此 反應性氣體分壓來監視，且以相對應之測量値作爲實際 値來控制或調整此種塗層過程，例如，藉由人工或較佳 是藉由自動存取（例如）放電電流及/或電壓及/或反 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） -----------------^----訂---.------ (請先閱讀背面之注音？事項再填寫本頁) 573298 A7 B7 五 、發明說明（ 經濟部智慧財產局員工消費合作社印製 第一基板；第一基板下方之在所設之頻帶中是半透明之 層系統；此層系統下方在所設頻帶中是透明之另一基 板；以及此基板下方之反射層系統。此種混合式碟片在 第一基板和周圍大氣之間具有一種由低於化學計量之氧. 化矽及/或氮氧化矽所構成之層系統。 本發明以下將依據圖式及較佳實施例來詳述。圖式簡 單說明如下： 弟1圖一*種混合式碟片之一'般構造。 第2圖本發明混合式碟片之一部份，其類似於第1圖。 第3圖由化學計量之二氧化矽（a)或由低於化學劑量之 氧化矽（b)所構成之保護層中，混合式碟片上之徑向偏差 相對於所塗佈之濕氣保護層厚度之關係。 第2圖中以相同之參考符號來表示此種類似於第1圖 之本發明之混合式碟片。依據本發明，在第一基板1之 表面A,上設置一種由本發明之材料所構成之濕氣保護層 系統1 〇 (已如上述所詳述）。此點已在本說明書導言中詳 述，因此只須再看第2圖即可而不必再說明。 依據第2圖，此混合式碟片由二個厚度分別是〇 . 6 m m 之基板1或5所構成，其塗佈一個反射層系統6以及一 個半透明之層系統2，另黏合一種層系統3。表面A!塗 佈不同之層厚度之化學計量之Si 02或低於化學計量之 Si〇x(X<2)。這些層藉由反應該DC濺鍍（磁控管濺鍍） 由金屬性之矽開始在含氧之大氣中塗佈。在申請人之商 用設備SDS/3 1上調整以下之製程條件： -10- 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） (請先閱讀背面之注意事項再填寫本頁) 裝 τι — s'. 573298 經濟部智慧財產局員工消費合作社印製 A7 B7 i、發明說明（π ) 特別小，其是與層厚度有關，所減少之倍數可大於3。同 樣優良之結果顯示在塗佈一種由氮氧化矽所構成之濕氣 保護層系統時。因此須使用一種〇2/N2氣體混合物作爲反 應性氣體且光學常數是由反應性氣體混合比例或分壓來 調整。 另外亦顯示：非常好之塗層材料（即，氮氧化矽或低 於化學劑量之氧化矽）可帶來很大之優點： 在溫度改變時，混合式碟片且特別是基板1和5 (因此 亦包括第2圖之基板1 )會膨脹。聚碳酸鹽之熱膨脹係數 α是65 X 1 (T6/k通常是用作基板之材料。在濕氣保護層系 統中所造成之電壓是與層材料之彈性模數E成比例。化 學計量之二氧化矽所具有之彈性模數是30至100 GP a。聚 碳酸鹽之彈性模數是2至2.5 GPa。化學計量之二氧化矽 很容易斷裂而形成輕微之裂痕，濕氣會經由此裂痕而侵 入基板中（此與層材料有關）。 氮氧化矽或低於化學計量之氧化矽具有好很多之機械 特性，即，和化學計量之二氧化矽比較時彈性模數E小 很多，斷裂範圍大很多。上述這些較佳之材料可使其簡 易地以較大之沈積速率藉由矽靶之反應性濺鍍來塗佈。 藉助於製程中所需之監視作用來設定化學計量，使氮氧 化矽或低於化學計量之氧化矽之折射率位於所需求之範 圍中。在此種頻帶區域中低於化學計量之氧化矽或同樣 是低於化學計量之氮氧化矽（其折射率滿足上述之需求） 實際上是不具吸收性的。 -12- 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） ----r----^---·------ (請先閱讀背面之注音？事項再填寫本頁) 573298 經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明說明（π) 藉由本發明之方法一方面不會（或只微不足道地）使 混合式碟片之製造時間變長，本發明較佳之塗層過程可 輕易地被自動化，輕易地被控制且可整合在塗層方法（其 較佳是用在混合式碟片之製造中）中。特別是使用低於 化學計量之氧化矽及/或低於化學計量之氮氧化矽作爲 濕氣保護層系統之材料時，則可輕易地遵守此種碟片之 徑向偏移所需之規格。此外，使用較佳之材料可藉由使 用無毒之價廉之原料來達成，這些原料是矽，氧和氮。 但是強調的是：特別是施加其它之層系統（即，半透明 之層系統和反射層系統）至此混合式碟片時，可使用其 它型式之方法作爲濺鍍用，例如，CVD法或電漿聚合法， 其在本發明之範圍中是用來塗佈濕氣保護層系統，不使 用一些耗時較久之濺鍍，而是使用上述之塗層方法。 若提及較佳之使用材料（即，氧化矽和氮氧化矽），則 可理解的是：例如，在氮氧化矽中在化合物SiOxNYRz中 仍可存在其它元素，其中z較X和y還小，即，Z很小。 符號說明 1，5…基板 2…半透明之層系統 3…黏合層 6…反射層系統 8…保護層 10…濕氣保護層系統 Ai/2，A】，A5/6，A3/5···面 -14- 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） -----------------^----^—------ (請先閱讀背面之注意事項再填寫本頁)

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  1. 573298—-π I公告本]____ 六、申請專利範圍 第89 1 0900 1號「混合式碟片之製造方法以及混合式碟片 」專利案 (92年8月修正）既8•一7 六申請專利範圍： * 1. 一種混合式碟片之製造方法，其包括以下各步驟： 一提供一個在所設之頻帶中是透明之第一基板（1)， 一於第一基板之一側施加一種層序列，其包含一種 反射層系統（6 )， 一於該基板（1 )之第二側上施加一種保護層系統，其 用來保護該第二表面使不受環境所影響，該保護 層系統包含至少一層低於化學計量之氧化矽層及 —層氮氧化砂層。 2. 如申請專利範圍第1項之製造方法，其中另包括以 下各步驟以施加該反射層系統（6 ): 一施加一個在所設之頻帶中是半透明之層系統（2 )， 一施加一個在所設之頻帶中是透明之第二基板（5)， 一施加該反射層系統（6 )。 3. 如申請專利範圍第1項之製造方法，其中施加該反 射層系統中之至少一層且至少此層以相同型式之真 空塗層方法施加而成。 4·如申請專利範圍第2項之製造方法，其中施加該半 透明層系統之至少一層及該反射層系統之至少一 層，且至少此層是以相同型式之真空塗層方法施加 573298 六、申請專利範圍 而成。 5. 如申g靑專利範S弟1項之製造方法，其中以灑鑛法 來沈積該反射層系統之至少一層。 6. 如申請專利範圍第 2項之製造方法，其中以濺鍍法 來沈積該半透明層系統之至少一層及該反射層系統 之至少一層。7.如申請專利範圍第1 項之製造方 法，其中該至少一層之材料之折射率選擇成等於透 明之第一基板（1 )之材料之折射率。 8.如申請專利範圍第1 項之製造方法，其中該至少一 層之材料之折射率η須選擇以下之範圍： 1 · 47$η€ 1 . 7。 9·如申請專利範圍第7項之製造方法，其中該至少一 層之材料之折射率η須選擇以下之範圍： 1 . 1 . 6。 1〇·如申請專利範圍第1項之製造方法，其中該層折射 率η選擇成最多是1.57。 11. 如申g靑專利範圍第1項之製造方法，其中該層之材 料之消滅常數k須選在以下之範®中： 10_4$kg5 X 10·3。 12. 如申請專利範圍第1項之製造方法，其中該層之材 料之消滅常數k選擇成最多是1 0 ·3。 ia如申請專利範圍第1項之製造方法，其中該層藉由 573298 六、申請專利範圍 矽靶之反應性濺鍍沈積而成。 M.如申請專利範圍第1項之製造方法，其中沈積該保 護層系統，其厚度至少是l〇nm。 15.如申請專利範圍第1項之製造方法，其中沈積該保 護層系統，其厚度最多是50nm。
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EP1180262A1 (de) 2002-02-20
KR100765017B1 (ko) 2007-10-09
US20020142099A1 (en) 2002-10-03
WO2000070606A1 (de) 2000-11-23
JP2003500783A (ja) 2003-01-07
US6776882B2 (en) 2004-08-17
EP1180262B1 (de) 2004-05-26
HK1045400A1 (en) 2002-11-22
KR20020000639A (ko) 2002-01-05
DE50006607D1 (de) 2004-07-01
ATE268046T1 (de) 2004-06-15

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