TW570970B - Highly efficient fluorescent material - Google Patents

Highly efficient fluorescent material Download PDF

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TW570970B
TW570970B TW091100290A TW91100290A TW570970B TW 570970 B TW570970 B TW 570970B TW 091100290 A TW091100290 A TW 091100290A TW 91100290 A TW91100290 A TW 91100290A TW 570970 B TW570970 B TW 570970B
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fluorescent material
patent application
item
light source
scope
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TW091100290A
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Andries Dr Ellens
Guenter Huber
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Patent Treuhand Ges Fuer Elektrische Gluehlampen Mbh
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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/59—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
    • H01L33/502—Wavelength conversion materials
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
    • C09K11/7715—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing cerium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B20/00—Energy efficient lighting technologies, e.g. halogen lamps or gas discharge lamps

Description

570970 五、發明說明（1) 技術領域 本發明係關於一種根據申請專利範圍第1項所述& _ 矽化物種類的螢光材料。特別地，這些材料爲會在黃@ 區域發螢光的氮矽化物。 先述技藝 氮矽化物型式（諸如S^ShN8及BadiJ8)之螢光材料 已從史利普（Schlieper)、米勒斯（Millus)及史力克 (Schlick)的·· Nitridosilicate II，
Hochtemperatursynthesen 及 Kristallstrukturen von
Sr2Si5N8 及 Ba2Si5N8 [氮矽化物 II，Sr2Si5N8 及 Ba2Si5N8 之高溫合成及結晶結構]，Z.anorg.Allg.Chem.621， ( 1 995)，第1 3 80頁之文章中熟知。但是，於此實例中並 無指明能在可看見光譜的特定區域中提供有效率發射之 激活劑（activators)。 發明槪述 本發明之目標爲提供一種根據申請專利範圍第1項所 述之螢光材料，其效率是儘可能地高而且也可利用在 3 70至43 0奈米區域的UV輻射而有效地被激發。 此目標可藉由申請專利範圍第1項的特徵部分而達 成。特別地，優良的細節部可在申請專利範圍中的附屬 項中發現。 目前，尙無高效率且可在約4 0 0奈米區域中有效地激 發之黃色螢光發射材料。已熟知一般使用的螢光材料 YAG:Ce公認地可在低於3 70奈米及大於43 0奈米下有 570970 五、發明說明（2) 效地被激發，但是不在約4 0 0奈米的區域。其它摻雜有 C e的石榴石類在所題的使用範圍下亦僅具有輕微被激發 的能力。因此需要發展出一種完全不同的系統。 根據本發明，選擇該螢光材料的組成物，使其構成可 藉由三價的Ce激活之Sr氮矽化物。先前未熟知的螢光 材料Sr2Si5N8 : Ce3 +可有效率地吸收近UV(特別是在 370至430奈米的區域處）且可有效率地發黃色光。其可 較佳地藉由1至10莫耳％的Ce(對Sr來說）激活。於此 實例中，Sr可部分地由Ba及/或Ca取代（有利地，最 高可達3 0莫耳％)。進一步的具體實施例則建構出一 SrSi7NiG : Ce3 +氮矽化物型式。於此實例中，Sr也可部 分地由B a及/或C a取代。 此螢光材料特別相當地適合作爲由初級UV輻射源（諸 如例如，UV LED或其它的燈）激發的黃色組分。因此， 其可在白色或黃色區域進行光源發射，如類似地在WO 9 8/3 9 8 07中描述。黃光發射源乃基於初級發射UV輻射 的LED，該LED的輻射可藉由根據本發明之螢光材料完 全地轉換成黃光。 特別地，此螢光材料可使用在與UV-LED(例如InGaN 型式）相關上，其可藉由在藍色及黃色區域發射螢光的材 料而產生白光。藍色組分的候選材料本身已熟知；例 如，BaMgAl1()017EU2+ (熟知爲 BAM)或 Ba5Si04(Cl， Br)6EU2 +或 CaLA2S4Ce3 +或其它（Sr，Ba，Ca)5(P〇4)3Cl :EU2+ (熟知爲SCAP)。此外，可使用紅色螢光材料來 570970 五、發明說明（3) 改善此系統的顏色。（Y，La，Gd，Lu)202S : EU3+、SrS :EU2 +或其它Sr2Si5N8 : EU2+ (尙未公告，參見EP-A 99 1 23 747.0)特別合適。 圖式之簡單說明 下列之目的爲藉由二個典型的具體實施例之輔助而更 詳細地解釋本發明。在圖形中： 第1圖顯示出第一氮矽化物的發射光譜； 第2圖顯示出此氮矽化物的反射光譜； 第3圖顯示出第二氮矽化物的發射光譜； 第4圖顯示出此氮矽化物的反射光譜； 第5圖顯示出提供作爲白光光源的半導體構件；及 第6圖顯示出三種螢光材料混合物的發射光譜。 圖式說明 根據本發明之螢光材料的具體實例則顯示在第1圖， 其係關於S r 2 S i 5 N 8 · C e 2發射營光材料，c e比例相當於 由Sr占據的晶格位置（lattice site)之4莫耳％。最大發 射在545奈米，及平均波長在5 72奈米。彩色矢量圖 (color locus)爲 x = 0.395 ; y = 0.514。激發則以 400 奈米 進行。 以通常的方法進行製造，將起始材料S r 3 N 2、S i 3 N 4及 Ce〇2彼此混合，隨後將該混合物以還原方式在14〇〇。〇 之N 2及Η 2下於爐中烘烤超過5小時。 第2圖顯示出此螢光材料的散射光譜。其顯示出在 3 70至440奈米區域處有明顯的最小値，因此說明在此 570970 五、發明說明（4) 區域中有好的被激發能力。 根據本發明的螢光材料之第二實例則顯示在第3圖， 其係關於Sr2Si5N8 : Ce2 +發射螢光材料，Ce比例相當於 由Sr所占據的晶格位置之8莫耳％。最大發射在5 54奈 米，平均波長在579奈米。彩色矢量圖（color locus)爲 x = 0.4 1 4 ； y = 0.514〇 以上述描述的方法來進行製造，將該混合物以還原方 式在1 40 0 °C的N2下於烘箱中烘烤超過6小時。 第4圖顯示出此螢光材料的散射光譜。其顯示出在 3 70至440奈米的區域有明顯的最小値，因此說明在此 區域中有好的被激發能力。 白光光源的設計則明確地顯示在第5圖中。光源爲具 InGaN型式的晶片1之半導體構件，其具有例如390奈 米的發射波長波峰，而埋在不透明的基本外罩8之切開 處9的區域中。晶片1藉由接合的金屬線1 4而連接至 第一終端3，且直接地連接至第二電終端2上。切開處 9則塡滿滿有封裝化合物5，其包含一作爲主要構成物 的環氧鑄塑樹脂（8 0至9 0重量％ )，及螢光顏料6 (少於 1 5重量％)。第一螢光材料爲於第一典型具體實施例所述 之該氮矽化物，同時第二螢光材料可在藍色區域發光， 於此特別地爲Ba5Si04(Cl，Br)6 : EU2+。該切開處具有 一邊壁1 7，其可提供作爲晶片1或顏料6之初級及二級 輻射的反射器。藍色及黃色二級輻射的組合可混合以產 生白色。 570970 五、發明說明（5) 在進一步的典型具體貫施例中’使用二種營光材料的 混合物作爲螢光顏料。第一螢光材料（υ爲於第一典型具 體實施例中所述之黃色發射氮矽化物Sr2Si5N8 : Ce2+、 第二（2)爲上述提及的藍色發射螢光材料SC AP及第三 爲型式Sr2Si5N8 : EU2 +之紅色發射螢光材料。第6圖顯 示出含可在3 7 5奈米處發射之初級發射L E D的光譜，各 別的黃色（1 )、藍色（2 )及紅色（3 )成分一起加入而形成一 整體光譜（G )，其可傳達一種高品質的白色色感。相關的 彩色矢量圖爲χ = 0· 3 3 3 ; y = 0.33 1。使用三種組分可保証 一種特別好的色彩重現。 參考符號說明 1 .....晶片 2 .....第二電終端 3 .....第一終端 5 .....封裝化合物 6 .....螢光顏料 8 .....不透明的基本外罩 9 .....切開處 14.....黏合的金屬線 •邊壁 1

Claims (1)

  1. 570970 92. 4；
    六、申請專利範圍 第9 1 1 0029 0號「高效率螢光材料、具有輻射源之光源」 專利案 (9 2年4月修正） A申請專利範圍： 1. 一種高效率螢光材料，其爲具有一陽離子A及基本 式爲AXS 1 yNz之氮矽化物種類，其特徵爲S 1·使用作 爲陽離子A，而該氮矽化物摻雜有用作激活劑的三 價C e。 2·如申請專利範圍第1項之螢光材料，其中該螢光材 料爲31*2315〜〇63 + 或31-317叱。：〇63+。 3·如申g靑專利範圍第1項之螢光材料，其中c e量的比 例在Sr的1及10莫耳％之間。 4·如申請專利範圍第1項之螢光材料，其中部分的s r 可由Ba及/ 或Ca替換。 5. 如申g靑專利範圍第4項之螢光材料，其中S r是3 0 莫耳％。 6. —種具有初級輻射源之光源，該初級輻射源可在光 學光譜區域的短波區域中在3 7 0至4 3 0奈米的波長 區域中發射輻射，此輻射可藉由申請專利範圍第1 至5項中任一項所述之第一螢光材料完全地或部分 地轉換成波長較長的且在可看見光譜區域中的二級 輻射。 7. 如申請專利範圍第6項之光源，其中使用一種以 570970 六、申請專利範圍 InGaN爲主的光·使用二極體作爲初級輻射源。 8. 如申g靑專利範圍第6項之光源，其中部分初級輻射 可藉由第二螢光材料繼續轉換成輻射較長的波長， 特別地，該第一及第二螢光材料經合適地選擇及混 合而可產生白光。 9. 如申請專利範圍第 8項之光源，其中部分初級輻射 可藉由第三螢光材料繼續轉換成輻射較長的波長， 此第三螢光材料可在紅色光譜區域中發射。 -------
TW091100290A 2001-02-07 2002-01-11 Highly efficient fluorescent material TW570970B (en)

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FR2820429A3 (fr) 2002-08-09
KR20020065843A (ko) 2002-08-14
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US20020105269A1 (en) 2002-08-08
NL1019917C2 (nl) 2006-01-17
DE10105800A1 (de) 2002-08-08
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GB2373510A (en) 2002-09-25
GB2373510B (en) 2004-07-07

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