569034 A7 B7 五、發明説明（彳） 【技術領域】 (請先閱讀背面之注意事項再填寫本頁) 本發明係關於可檢測印刷基板等所形成之圖案的顯微 鏡，特別是關於可適用爲檢測工件所形成工件·對準標記 所需之對準顯微鏡的顯微鏡。 【習知技術】 一般，顯微鏡之檢測被檢測物，乃是將照明光照射於 被檢測物，使其反射光射入於顯微鏡，再加以擴大爲適當 之倍率，由眼睛或c C D等接收裝置顯像而進行。 以下，就將掩膜圖案曝光於工件之曝光裝置，以檢測 掩膜與工件定位用工件·對準標記（以下稱爲工件標識） 所需之對準顯微鏡（以下稱爲顯微鏡）爲例加以說明。 此種顯微鏡，例如在日本特開2 0 0 0 -147795號公報已有記載。 如該公報之段落0 0 3 3〜0 0 3 4所記載，隨著形 成有工件標識之工件狀態，有時會使用由擴散光進行工件 標識檢測之所謂暗視場照明的照明方法。 經濟部智慧財產局員工消费合作社印製 所謂暗視場照明，則是自顯微鏡之成像系統光程（對 準顯微鏡之N A )外向工件照射照射光（準顯光）之方法 ’此時’僅工件標識邊緣部分所散亂之散亂光射入於顯微 鏡，藉此可檢出工件標識。 以下，參照圖6，就利用暗視場照明之對準顯微鏡動 作加以說明。 在同圖，1爲對準顯微鏡，係具有對準用照明光源 ^紙張尺度適用中國國家標準（CNS ) A4規格（210X297公楚) ：Γ7，ΓΖ 經濟部智慧財產局員工消費合作社印製 569034 A7 _____B7 五、發明説明（2 )569034 A7 B7 V. Description of the invention (彳) [Technical Field] (Please read the precautions on the back before filling out this page) The present invention relates to a microscope that can detect patterns formed on printed substrates, and in particular, it can be used for inspection. Microscope for aligning microscope required for the workpiece and alignment mark formed by the workpiece. [Knowledge technology] Generally, the detection object of the microscope is to illuminate the illumination object with the illumination light, make the reflected light enter the microscope, and then enlarge it to an appropriate magnification. Development. In the following, an exposure device for exposing a mask pattern to a workpiece will be described as an example of an alignment microscope (hereinafter referred to as a microscope) required to detect a mask and workpiece positioning alignment mark (hereinafter referred to as a workpiece identification). . Such a microscope is described in, for example, Japanese Patent Laid-Open No. 2000-147795. As described in paragraphs 0 0 3 3 to 0 0 3 4 of this publication, as the state of a workpiece with a workpiece mark is formed, a so-called dark field illumination illumination method in which the workpiece mark is detected by diffused light is sometimes used. The so-called dark-field illumination printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs is a method of irradiating light (quasi-display light) on the workpiece from the optical path of the microscope's imaging system (NA aligned to the microscope). The scattered light scattered at the edge of the mark is incident on the microscope, so that the workpiece mark can be detected. Hereinafter, an operation of the alignment microscope using dark field illumination will be described with reference to FIG. 6. In the same figure, 1 is an alignment microscope, which has an illuminating light source for alignment ^ The paper size is applicable to the Chinese National Standard (CNS) A4 specification (210X297 Gongchu): Γ7, ΓZ Printed by the Consumers ’Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 569034 A7 _____B7 V. Description of the invention (2)
1 1 ，薄膜P (半透光性膜），透鏡L 1，L 2，C C D 攝影機1 2，暗視場照明用對準光射出部1 3。暗視場照 明用對準光射出部1 3，乃呈環形狀，具有環狀配置之射 出部，其中央設有圓形開口部1 3 a。 對準用照明光源1 1所放出之光，則介光纖1 4被導 致射出部1 3，自對準顯微鏡1之成像系統光程的更外側 照射工件標識W A Μ。 工件平坦部分之反射光，偏離到對準顯微鏡1之成像 系統的視野外，工件標識W A Μ邊緣部之擴散光一部分即 射入於對準顯微鏡1，在薄膜Ρ反射。 上述反射光，係通過透鏡Ll， L2射入CCD攝影 機1 2，而顯像工件標識W A Μ之影像。 【發明欲解決之課題】 由暗視場照明用對準光射出部1 3照射工件標識 WAM所需之射出光波長，通常由於不曝光工件標識近旁 之抗蝕劑，故使用非曝光波長光。以往，乃使用波長 510n m〜590 η m光（綠色可見光）。 以往，選擇該波長（波長範圍）光作爲照明光（對準 光）之理由即如下。 以顯微鏡之接收部所使用C C D攝影機之頻譜響應， 在5 0 0 nm近旁爲最高。 在圖7顯示通常所使用之C C D攝影機頻譜響應特性 一例。同圖之橫軸爲波長C n m )，縱軸爲頻譜響應特性 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） ^ ~~ (請先閲讀背面之注意事項再填寫本頁)1 1, a thin film P (semi-transparent film), a lens L 1, L 2, a CC camera D 12, and a collimated light emitting section 13 for dark field illumination. The aligning light emitting portion 13 for dark field illumination has a ring shape and has a ring-shaped emitting portion. A circular opening portion 1 a is provided in the center. The light emitted from the illuminating light source 11 for alignment causes the optical fiber 14 to cause the emission portion 13 to radiate the workpiece mark WA more outward from the optical path of the imaging system of the alignment microscope 1. The reflected light from the flat part of the workpiece deviates from the field of view of the imaging system of the alignment microscope 1. A part of the diffused light at the edge of the workpiece mark WAM is incident on the alignment microscope 1 and reflected by the thin film P. The reflected light is incident on the CCD camera 12 through the lenses L1 and L2, and the image of the workpiece mark WAM is developed. [Problems to be Solved by the Invention] Non-exposed wavelength light is usually used because the wavelength of light emitted by the target light emitting part 13 for dark field illumination to irradiate the workpiece mark WAM is not exposed because the resist near the workpiece mark is not exposed. Conventionally, light (green visible light) having a wavelength of 510 nm to 590 nm has been used. Conventionally, the reason for selecting light of this wavelength (wavelength range) as illumination light (alignment light) is as follows. The spectral response of the CC camera used in the receiver of the microscope is highest near 500 nm. An example of the spectral response characteristics of a commonly used CC camera is shown in FIG. The horizontal axis of the same figure is the wavelength C n m), and the vertical axis is the spectral response characteristic. The paper size applies the Chinese National Standard (CNS) A4 specification (210X297 mm) ^ ~~ (Please read the precautions on the back before filling this page)
569034 A7 ___B7 五、發明説明（3 ) (相對値）。如同圖所示，在波長5 0 0 n m附近之靈敏 度爲最高，波長1 0 0 0 nm以上光之靈敏度幾乎爲〇。 (請先閲讀背面之注意事項再填寫本頁} 因此’如爲上述之波長（5 1 Onm〜5 90nm) 光，則能以高靈敏度顯像工件標識像。 (2 )以往，作爲對準光源，有時亦有與曝光用光源 (自超高壓水銀燈之光）兼用之情形。如此狀態，則利用 所§胃超商壓水銀燈之e線的波長5 4 6 n m光。 於是’以對準光源使用其他光源時，亦對應e線之波 長C546nm) ’利用其近旁之波長光。 只是’最近亦發見到由習知之暗視場照明方法無法檢 測之工件。在圖8顯示該種工件之一例。 如同圖所示，上述工件係爲在形成有工件標識W A Μ 之工件W ’塗抹光敏抗焊劑R (基板裝設零件之保護抗蝕 膜：亦被稱爲P S R )，再於其上粘貼覆蓋薄膜（聚酯薄 膜）等保護薄膜F所成。 經濟部智慧財產局員工消費合作社印製 對如此工件，實行明視場照明（來自對準顯微鏡之成 像系統光程內的照明）時，照明光被覆蓋薄膜F或光敏抗 ;焊齊！1 R所反射致全體呈發光，而無法檢測工件標識W A Μ °於是’採用上述暗視場照明。其原理爲：在工件標識 w A Μ邊緣會發生散亂光，理應可檢出之。 # ’實際上，雖使用暗視場照明，亦有所檢出影像全 胃變暗’或雜波變多，而無法檢測工件標識W A Μ之情形 〇 本發明即鑑於上述情形所開發者，其目的爲提供一種 本ϋΧϊϊϊίΙ中國國家榡準（cNS ) Α4規格（210><297公釐） _6 -— 569034 A7 B7 五、發明説明（4 ) 可確實檢測塗抹有抗蝕劑，更粘貼有保護膜之印刷基板等 工件之圖案的顯微鏡。 (請先閱讀背面之注意事項再填寫本頁) 【課題之解決手段】 如上述，就可確實檢測塗抹有抗蝕劑，更粘貼有保護 膜之印刷基板等工件之圖案的方法，進行各種實驗加以檢 討結果，已知適當地選定上述圖案之照明光（對準光）波 長，即能以高靈敏度檢出圖案。 藉實驗，對上述波長進行調查結果，上述圖案之照明 光如含有波長5 8 0 n m以下光時，雜波乃顯著增加，圖 案之檢測變爲困難。即，自上述對準光遮斷波長5 8 0 n m以下光時，雜波變少，而可檢出工件標識。尤其，藉 自上述顯微鏡之成像系統光程外對上述圖案照射照明光（ 暗視場照明），能確實檢測圖案。 經濟部智慧財產局K工消費合作社印製 又，如上述，通常使用之C CD攝影機，其波長 5 0 〇 nm附近之靈敏度爲最高，在波長8 0 0 nm以上 靈敏度顯著地降低，且對波長1 0 0 0 n m以上光靈敏度 幾乎成爲0，致上述照明光含有波長8 0 0 n m以上光亦 無影響。 在本發明，係自如上述自上述顯微鏡之成像系統光程 外對上述圖案照射已遮斷波長5 8 0 n m以下光之照明光 ’故能確實檢測塗抹有抗蝕劑，更粘貼有保護膜之印刷基 板等工件之圖案。 尤其，藉將本發明之顯微鏡適用於曝光裝置，作爲進 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） 569034 A7 _ B7 五、發明説明（5 ) (請先閲讀背面之注意事項再填寫本頁) 行掩膜與工件定位之對準顯微鏡加以使用，乃能以高靈敏 度檢出工件標識，而可確實檢測工件標識進行掩膜與工件 之定位。 【發明之實施形態】 在圖1顯示本發明實施例之顯微鏡。 圖1所示者，除了設有可遮斷5 8 0 n m以下光之濾 波器外，係與圖6所示者相同構成，與上述圖6所示相同 零件即附予相同符號。569034 A7 ___B7 V. Description of the invention (3) (relative to 値). As shown in the figure, the sensitivity is highest near the wavelength of 500 nm, and the sensitivity of light above the wavelength of 100 nm is almost zero. (Please read the precautions on the back before filling in this page} Therefore, 'if the above wavelength (5 1 Onm ~ 5 90nm) light, it can display the workpiece identification image with high sensitivity. (2) In the past, it was used as an alignment light source Sometimes, it may also be used in combination with an exposure light source (light from ultra-high pressure mercury lamp). In this state, the wavelength of the e-line of the gastric hypercommercial mercury lamp is 5 4 6 nm. So 'align the light source When using other light sources, it corresponds to the wavelength of the e-line C546nm) 'Using its nearby wavelength light. It ’s just recently that we have seen workpieces that cannot be detected by the conventional dark field illumination method. An example of such a workpiece is shown in FIG. 8. As shown in the figure, the above-mentioned workpiece is coated with a photosensitive solder resist R (a protective resist film for substrate mounting parts: also called PSR) on the workpiece W ′ where the workpiece mark WAM is formed, and then a cover film is pasted thereon. (Polyester film) and other protective films F. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs For such a workpiece, when bright-field illumination (illumination from the optical path of the imaging system of the alignment microscope) is performed, the illumination light is covered with a film F or a photoresistance; welding is complete! The reflection from 1 R causes the whole to glow, but the workpiece mark W A Μ ° cannot be detected. Therefore, the above-mentioned dark field illumination is used. The principle is that scattered light will occur at the edge of the workpiece mark w AM and it should be detectable. # 'Actually, although dark-field illumination is used, the image of the entire stomach is darkened' or there are many clutters, and the workpiece mark WA M cannot be detected. The present invention is developed in view of the above situation. The purpose is to provide a Chinese National Standard (cNS) A4 specification (210 > < 297 mm) _6-569034 A7 B7 V. Description of the invention (4) It can be detected that the resist is applied, and it is more protected. Microscope for patterning of printed substrates such as films. (Please read the precautions on the back before filling in this page.) [Solutions to the problem] As described above, you can surely detect patterns of workpieces such as printed substrates coated with resist and protective films, and perform various experiments. As a result of the review, it is known that the wavelength of the illumination light (alignment light) of the above pattern is appropriately selected, and the pattern can be detected with high sensitivity. As a result of investigating the above-mentioned wavelengths through experiments, if the illumination light of the above-mentioned pattern contains light having a wavelength of less than 580 nm, the noise will increase significantly, and the detection of the pattern becomes difficult. That is, when the wavelength of light below 580 nm is cut off by the above-mentioned alignment light, the noise is reduced, and the workpiece mark can be detected. In particular, by illuminating the above pattern with illumination light (dark field illumination) from the optical path of the imaging system of the microscope, the pattern can be reliably detected. Printed by the K-Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. As mentioned above, the commonly used C CD camera has the highest sensitivity around wavelength 500 nm, and the sensitivity is significantly reduced above wavelength 800 nm, and the wavelength The light sensitivity above 100 nm is almost zero, so that the above-mentioned illumination light does not affect light with a wavelength above 800 nm. In the present invention, since the above-mentioned pattern is irradiated with the illumination light that has cut off light having a wavelength of less than 5800 nm from the optical path of the imaging system of the microscope as described above, it can reliably detect that a resist is applied, and a protective film is attached. Print the pattern of substrates and other workpieces. In particular, by applying the microscope of the present invention to an exposure device, the Chinese paper standard (CNS) A4 (210X297 mm) is applied as the paper size. 569034 A7 _ B7 V. Description of the invention (5) (Please read the note on the back first) Please fill in this page for further information.) The alignment microscope used for mask and workpiece positioning can detect the workpiece mark with high sensitivity, and can accurately detect the workpiece mark for mask and workpiece positioning. [Embodiment of the invention] FIG. 1 shows a microscope of an embodiment of the present invention. The one shown in FIG. 1 has the same structure as that shown in FIG. 6 except that a filter capable of blocking light below 5800 nm is provided. The same parts as those shown in FIG. 6 are given the same reference numerals.
在同圖，1爲對準顯微'鏡，乃具有對準用照明光源 1 1 ，薄膜P (半透光性膜），透鏡L 1，L 2，C C D 攝影機1 2，暗視場照明用對準光射出部1 3。對準用照 明光源1 1卻設有可遮斷5 8 0 n m以下光之波長選擇濾 波器1 5。 暗視場照明用對準光射出部1 3 ，與上述圖6同樣， 係呈環形狀，具有環狀配置之射出部，其中央設有圓形開 口部 1 3 a。 經濟部智慧財產局員工消費合作社印製 如上述，對準用照明光源1 1所放出之光，則介光纖 1 4被導致射出部1 3，自對準顯微鏡1之成像系統光程 的更外側照射工件標識W A Μ。 工件平坦部分之反射光，乃偏離到對準顯微鏡1之成 像系統的視野外，工件標識W A Μ邊緣部之擴散光一部分 即射入於對準顯微鏡1，在薄膜Ρ反射。 上述反射光，卻通過透鏡L 1 , L 2射入C C D攝影 ------—-- 本紙張尺度適用中國國家標準（CNS ) A4規格（21 ox297公釐〉 569034 經濟部智慧財產局員工消費合作社印製 A7 B7 _五、發明説明（6 ) 機1 2，而顯像工件標識w A Μ之影像。 在圖1，雖顯示對準光射出側設有波長選擇濾波器 1 5之情形，惟該波長選擇濾波器1 5可裝設於對準光之 光程中任意位置，如圖1之虛線所示，設於受光側，即顯 微鏡之成像系統亦能獲得同樣效果。 在圖2顯示，暗視場照明之改變對準光波長可否檢測 工件標識之調查結果。又，工件則是如圖8所示，在形成 有工件標識W A Μ之工件W塗抹光敏抗焊劑R，更自其上 粘貼覆蓋薄膜等保護薄膜F構造之工件。 圖2所示者，係爲使用上述圖1所示顯微鏡，改換對 準用照明光源1 1所設波長選擇濾波器1 5，由C C D攝 影機1 2顯像工件標識之影像。而以對準用照明光源1 1 使用鹵素光源，以CCD攝影機使用具有與上述圖7所示 頻譜響應特性相同特性者。 在圖2，標識影像欄中央部之黑色圓形即爲工件標識 W A Μ，水平剖面波形欄則顯示，與上述工件標識W A Μ 水平交叉線上之對比。又，對各影像，亦顯示標識影像欄 背景部之深淡程度（平均値），標識部之深淡程度（平均 値），對比度。對比度如同圖所示，爲（除去光點部分之 背景部深淡程度）-（除去光點部分之標識部深淡程度） 〇 如圖2所示，上述實驗乃就對準光之波長爲5 1 0〜690n m，580 〜1〇〇〇 nm，680 〜1000 n m之三種情形加以調查。 本紙張尺度適用中國國家標準（CNS )八4規格（2Κ)Χ 297公釐)Γ^： " ' ~ (請先閲讀背面之注意事項再填寫本頁) 裝· 訂 線·· 569034 A7 B7 五、發明説明（7 ) 又，雖未圖示對準光之波長爲5 1 0 nm以下之情形 ，惟此爲已成抗蝕劑之感光波長領域，不使用所致。 (請先閱讀背面之注意事項再填寫本頁) 在圖3，圖4顯示爲獲得上述580〜lOOOnm ，6 8 0〜1 0 0 0 n m之實驗結果所使用波長選擇濾波 器之透射率。其中，圖3爲顯示遮斷5 8 0 nm以下波長 (比5 8 0 n m短波長光之透射率爲1 %以下）之波長選 擇濾波器的特性，圖4爲遮斷6 8 0 n m以下波長（比 6 8 0 n m短波長光之透射率爲1 %以下）之波長選擇濾 波器的特性。圖3 ，圖4中之橫軸爲波長，縱軸爲透射率 〇 又，圖3 ，圖4所示波長選擇濾波器雖亦使1 〇 〇 〇 n m以上光透過，惟如上述圖7所示，1 0 〇 〇 n m以上 時CCD攝影機之靈敏度幾乎爲〇，故圖2將波長上限設 於 1 0 0 0 n m。 經濟部智慧財產局員工消費合作社印製 如圖2所示，對準光之波長爲5 1 0〜6 8 0 nm時 ，影像全體較多雜波，對比度亦不佳，致無法檢測工件標 識。又’對準光之波長爲5 8 0〜1 0 0 0 n m時，雖稍 有雜波，對比度亦稍佳，故可檢出工件標識。 且’對準光之波長爲6 8 0〜1 0 0 0 n m時，殆無 雜波，對比度亦非常好，而充分能檢出工件標識。 在圖5整理出上述結果。由同圖可知，對準光含有波 長5 8 0 n m以下光時，雜波較多，無法檢出工件標識。 雜波之發生原因雖不明，但有可能在p S R與覆蓋薄膜之 界面發生。 -Ί 0 - 本紙張尺度適用中國國家標隼（CNS ) A4規格（210X297公釐） 569034 經濟部智慧財產局W工消費合作社印製 A7 ____B7五、發明説明（8 ) 由此結果可知，欲檢出工件標識，至少需要能遮斷波 長580nm以下之光。 又’波長爲8 0 0 nm以上時，上述圖7所示ccD 攝影機之靈敏度會降低，使用通常之c CD攝影機雖困難 檢測工件彳示識’惟如在8 0 0 n m以上具有高靈敏度之顯 像器，則有可能良好地檢測工件標識。 又，在上述實施例，雖將能使曝光裝置之掩膜與工件 定位的對準顯微鏡爲例加以說明，但曝光裝置以外亦可使 用之。例如’在能進行印刷基板佈線之外觀檢查的檢查裝 置等’亦可使用於爲進行工件定位所需之檢測工件標識的 顯微鏡。 【發明之效果】 如上說明，在本發明，由於自對準光遮斷波長5 8 0 n m以下光，故能將塗抹有抗蝕劑，且更粘貼有保護膜之 印刷級板等工件之圖案，不受雜波之影響，以高靈敏度予 以檢測。尤其，藉自上述顯微鏡之成像系統光程外向上圖 案照射照明光（暗視場照明），可更加確實地檢測圖案。 【圖示之簡單說明】 圖1爲本發明實施例之對準顯微鏡構成例顯示圖。 圖2爲圖1裝置之圖案檢測結果顯示圖。 圖3爲獲得圖2檢測結果所使用之波長選擇濾波器（ 可遮斷5 8 0 n m以下光）特性顯示圖。 (請先閲讀背面之注意事項再填寫本頁) •裝· 訂 線 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐1 - 11 " 569034 A7 B7 五、發明説明（9 ) 圖4爲獲得圖3檢測結果所使用之波長選擇濾波器（ 可遮斷6 8 0 n m以下光）特性顯示圖。 (請先閲讀背面之注意事項再填寫本頁) 圖5爲整理出圖2結果之示意圖。 圖6爲對準顯微鏡構成例顯示圖。 圖7爲C C D攝影機之頻譜響應特性一例示圖 圖8爲形成有圖案並被塗抹P S R且粘貼有保護膜之 工件例示圖 【符號說明】 1 :對準顯微鏡 1 1 :對準用照明光源 1 2 : C C D攝影機 1 3 :暗視場照明用對準光射出部 1 3 a :開口部 1 4 :光纖 經濟部智慧財產局員工消費合作社印製 15:波長選擇濾波器 F :保護膜 R :光敏抗焊劑 W :工件 W A Μ :工件標識 Ρ :薄膜Ρ (半透光性膜） L 1 , L 2 :透鏡 本紙張尺度適用中國國家標準（CNS ) Α4規格（210X297公釐）In the same figure, 1 is an alignment microscope 'mirror, which has an illumination light source 1 1 for alignment, a thin film P (semi-transparent film), lenses L 1, L 2, CCD camera 12, and a pair for dark field illumination.准 光 出 出 部 1 3。 Quasi-light emitting section 1 3. The illuminating light source 11 for alignment is provided with a wavelength selection filter 15 which can block light below 5800 n m. As in FIG. 6 described above, the collimated light emitting portion 1 3 for dark field illumination has a ring shape and has a ring-shaped emitting portion. A circular opening portion 1 3 a is provided in the center. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs as described above, the light emitted by the illuminating light source 11 is aligned, and the optical fiber 14 is caused to emit further out of the optical path of the imaging system of the self-aligning microscope 1 3 Artifact ID WAM. The reflected light from the flat part of the workpiece deviates from the field of view of the imaging system of the alignment microscope 1, and part of the diffused light at the edge of the workpiece mark WAM is incident on the alignment microscope 1 and reflected by the film P. The above reflected light, but shot into the CCD through the lenses L 1, L 2 ---------- This paper size applies the Chinese National Standard (CNS) A4 specification (21 ox297 mm> 569034 Employees of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 B7 printed by the consumer cooperative _V. Description of the invention (6) Machine 12 and the image of the workpiece mark w A Μ is displayed. In Fig. 1, the wavelength selective filter 15 is shown on the light exit side. However, the wavelength-selective filter 15 can be installed at any position in the optical path of the aligned light, as shown by the dashed line in FIG. 1 and placed on the light-receiving side, that is, the imaging system of the microscope can also obtain the same effect. It shows that the results of the investigation of whether the change in the alignment of the dark-field illumination can detect the workpiece mark. Also, as shown in FIG. 8, the workpiece W is coated with a photosensitive solder resist R as shown in FIG. A work piece with a protective film F structure such as a cover film is affixed to it. The one shown in Figure 2 is to use the microscope shown in Figure 1 above, and change the wavelength selection filter 15 set by the illumination light source 11 for alignment, which is displayed by the CCD camera 12 Like the image of the workpiece identification. The bright light source 1 1 uses a halogen light source, and uses a CCD camera with the same characteristics as the spectral response characteristics shown in Figure 7 above. In Figure 2, the black circle in the center of the marker image bar is the workpiece mark WAM, and the horizontal section waveform bar It displays the contrast with the horizontal cross line on the workpiece mark WAM. Also, for each image, the gradation (average 値) of the background portion of the logo image bar, the gradation (average 値) of the logo portion, and contrast are also displayed. The contrast is as shown in the figure, which is (the degree of fading of the background portion except the light spot portion)-(the degree of fading of the identification portion except the light spot portion) 〇 As shown in Figure 2, the above experiment is aimed at the wavelength of light at 5 10 0 ~ 690nm, 580 ~ 1000nm, 680 ~ 1000nm are investigated in three cases. This paper size is applicable to China National Standard (CNS) 8 4 specifications (2K) × 297mm) Γ ^: " '~ (Please read the precautions on the back before filling this page) Binding · Binding · 569034 A7 B7 V. Description of the invention (7) In addition, although the wavelength of the alignment light is less than 5 10 nm , But this is the one that has become a resist Wavelength light field is not used due. (Please read the precautions on the back before filling in this page.) Figure 3 and Figure 4 show the transmittance of the wavelength-selective filter used to obtain the experimental results of 580 ~ 100nm, 680 ~ 100nm. Among them, Fig. 3 shows the characteristics of a wavelength-selective filter that blocks wavelengths below 580 nm (the transmittance of light having a shorter wavelength than 580 nm is less than 1%), and Fig. 4 illustrates that it blocks wavelengths below 680 nm Characteristics of a wavelength-selective filter (with a transmittance of 1% or less for shorter wavelengths than 680 nm). In Fig. 3, the horizontal axis in Fig. 4 is the wavelength, and the vertical axis is the transmittance. Also, in Fig. 3, the wavelength selection filter shown in Fig. 4 also transmits light above 1000 nm, but as shown in Fig. 7 above. The sensitivity of the CCD camera is almost 0 when it is more than 100 nm. Therefore, the upper limit of the wavelength is set to 1000 nm in FIG. 2. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs As shown in Figure 2, when the wavelength of the collimated light is 5 1 0 to 6 80 nm, the entire image is more cluttered and the contrast is not good, making it impossible to detect the workpiece identification. Also, when the wavelength of the collimated light is 580 to 100 nm, although there is a little clutter, the contrast is also slightly better, so the workpiece mark can be detected. In addition, when the wavelength of the aligning light is 680 to 100 nm, there is no noise, and the contrast is very good, and the workpiece mark can be detected sufficiently. The results are summarized in FIG. 5. As can be seen from the same figure, when the collimated light contains light with a wavelength less than 5800 n m, there are many clutters and it is impossible to detect the workpiece mark. Although the cause of the clutter is unknown, it may occur at the interface between p S R and the cover film. -Ί 0-This paper size applies to China National Standard (CNS) A4 specification (210X297 mm) 569034 Printed by A7 ____B7, W7, Consumer Cooperatives, Intellectual Property Bureau, Ministry of Economic Affairs 5. Description of the invention (8) The workpiece identification needs to be able to block at least the light with a wavelength below 580nm. Also, 'when the wavelength is above 800 nm, the sensitivity of the ccD camera shown in Figure 7 above will be reduced. Although it is difficult to detect the workpiece using a conventional c CD camera, it is only as obvious as having a high sensitivity above 800 nm. Camera, it is possible to detect the workpiece mark well. In the above-mentioned embodiment, although an alignment microscope capable of positioning the mask of the exposure device and the workpiece is described as an example, it may be used other than the exposure device. For example, "an inspection device capable of visually inspecting the printed circuit board wiring" can also be used for a microscope for detecting a workpiece mark necessary for positioning a workpiece. [Effects of the Invention] As described above, in the present invention, since the self-aligned light blocks light below a wavelength of 580 nm, it is possible to apply a pattern of a workpiece such as a printing-grade board coated with a resist and a protective film further. It is not affected by clutter and can be detected with high sensitivity. In particular, by illuminating the illumination light (dark field illumination) on the pattern from the optical path of the imaging system of the above microscope, the pattern can be detected more reliably. [Brief description of the diagram] FIG. 1 is a display diagram of a configuration example of an alignment microscope according to an embodiment of the present invention. FIG. 2 is a diagram showing a pattern detection result of the device in FIG. 1. FIG. 3 is a characteristic display diagram of a wavelength selective filter (which can block light below 5800 n m) used to obtain the detection result of FIG. 2. (Please read the precautions on the back before filling in this page) • The paper size of the binding and binding paper is applicable to the Chinese National Standard (CNS) A4 (210X297 mm 1-11 " 569034 A7 B7 V. Description of the invention (9) 4 In order to obtain the wavelength selection filter (can block light below 680 nm) characteristics used to obtain the detection result of Figure 3. (Please read the precautions on the back before filling this page) Figure 5 is the result of Figure 2 The schematic diagram is shown in Figure 6 as an example of the configuration of an alignment microscope. Figure 7 is an example of the spectral response characteristics of a CCD camera. : Alignment microscope 1 1: Alignment illumination light source 1 2: CCD camera 1 3: Alignment light emitting section for dark field illumination 1 3 a: Opening section 1 4: Printed by the Consumer Cooperative of Intellectual Property Bureau, Ministry of Optical Fiber Economy 15 : Wavelength-selective filter F: Protective film R: Photosensitive solder resist W: Work piece WA Μ: Work piece identification P: Thin film P (semi-transparent film) L 1, L 2: Lens This paper size is applicable to Chinese National Standard (CNS) Α4 specification (210X297 mm )