JPS58152243A - Detector for foreign matter in reticle - Google Patents

Detector for foreign matter in reticle

Info

Publication number
JPS58152243A
JPS58152243A JP57033818A JP3381882A JPS58152243A JP S58152243 A JPS58152243 A JP S58152243A JP 57033818 A JP57033818 A JP 57033818A JP 3381882 A JP3381882 A JP 3381882A JP S58152243 A JPS58152243 A JP S58152243A
Authority
JP
Japan
Prior art keywords
reticle
pattern
foreign matter
foreign object
light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP57033818A
Other languages
Japanese (ja)
Inventor
Nobuyuki Akiyama
秋山 伸幸
Yoshimasa Fukushima
芳雅 福嶋
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP57033818A priority Critical patent/JPS58152243A/en
Publication of JPS58152243A publication Critical patent/JPS58152243A/en
Pending legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/708Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70866Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece

Landscapes

  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Atmospheric Sciences (AREA)
  • Toxicology (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)

Abstract

PURPOSE:To detect the sizes, kinds, etc. of the foreign matters on a reticle, by providing a reflecting mirror, which is movable forward and backward, in the midway of an optical path which projects and exposes reticle patterns on a wafer, magnifying the image reflected by the same and observing the image. CONSTITUTION:This device illuminates a reticle 1, which is a photographic dry plate having circuit patterns, from above with a mercury arc lamp 2 for illumination and a condenser lens 3, projects the patterns of the reticle 1 with a scale- down projecting lens 4 in a reduced size on a wafer 5 and forming chips 6. To detect the foreign matters stuck on the reticle 1, a shutter 23 is closed to shut off the illuminating light of the lamp 2 and a lamp 25 for reflection illumination is lighted. The light from the lamp 25 is reflected by a semitransparent mirror 27 and a reflecting mirror 16, and irradiates the bottom surface of the reticle 1. The images of the patterns and foreign matters on the reticle 1 are observed through a semitransparent mirror 27 with a microscope 20.

Description

【発明の詳細な説明】 本発明は、縮小投影露光装置のレチクル上にスポット光
を走査して異物を検出するレチクル異物検出装置に関す
るものである。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a reticle foreign matter detection device that detects foreign matter by scanning a spot light on a reticle of a reduction projection exposure apparatus.

先ず、縮小投影露光装置の概念を第1図を用。First, the concept of a reduction projection exposure apparatus will be explained using Fig. 1.

いて説明する。この装置は1回路パターン髪有する写真
乾板であるレチクル1を照明用水銀灯2とコンデンサレ
ンズSにょシ上方から照明し。
I will explain. In this device, a reticle 1, which is a photographic plate having one circuit pattern, is illuminated from above by a mercury lamp 2 for illumination and a condenser lens S.

レチクル1のパターンを縮小投影レンズ4で縮小してウ
ェハ5上に投影し、チップ6を形成す。
A pattern on a reticle 1 is reduced by a reduction projection lens 4 and projected onto a wafer 5 to form a chip 6.

るものである。この際、1回に露光される間荷はチップ
6だけであるので、クエハ5をx、y方向に動かして、
1チツプづつ露光することにょシ、ウニ八全面を露光し
ている。
It is something that At this time, since only the chip 6 is exposed at one time, the wafer 5 is moved in the x and y directions,
Instead of exposing one chip at a time, the entire surface of the sea urchin was exposed.

この−、レチクル6上に、何らかの原因で今物7が付着
した場合には、露光光がこの異物で遮断されるので、チ
ップ6上には露光光が届かずピンホール8が生じてしま
う。チップは、ウェハを” r !方向にステップ・ア
ンド・リピートで駆動することKよシ自動的に露光され
るため、レチクル上に異物があると、すべてのチップに
ピンホールが生じ、全品が不良となる。そのため、レチ
クル上の付着異物を常時検査し、露光中にA物が付着し
たら、直ちに1告を発し、露光を中止すると共にレチク
ルを交換する必要がある。
If a foreign object 7 adheres to the reticle 6 for some reason, the exposure light will be blocked by the foreign object, so that the exposure light will not reach the chip 6 and a pinhole 8 will be created. Since the chips are automatically exposed by driving the wafer in a step-and-repeat manner in the "r!" direction, if there is a foreign object on the reticle, pinholes will appear in all the chips and all products will be defective. Therefore, it is necessary to constantly inspect the reticle for adhering foreign matter, and if object A adheres to the reticle during exposure, it is necessary to immediately issue a warning, stop the exposure, and replace the reticle.

従来のレチクル異物検出方法として、米国OCA社の縮
小投影式自動!スフアライナ[DyIが採用している異
物検出法がある。レチクル1け第2図で示すように自動
的にコンデンサレンズ3の下に搬送される。この異物検
出法においては。
As a conventional reticle foreign object detection method, OCA's automatic reduction projection method! There is a foreign matter detection method adopted by Spherina [DyI]. One reticle is automatically conveyed under the condenser lens 3 as shown in FIG. In this foreign object detection method.

搬送途中でレチクル上のA物を検出している。Object A on the reticle is detected during transportation.

検出のために、レチクル1の上方にレーザ発振器を置き
、集光レンズ10でレーザ光をレチクル1の表面に集光
している。レチクル1が搬送されている間に異物11が
付着し、これがレーザ集光点の真下に来ると、レーザ光
は散乱する。集光点の周辺にレンズ12と光電変換素子
15を設け。
For detection, a laser oscillator is placed above the reticle 1, and the laser beam is focused onto the surface of the reticle 1 by a focusing lens 10. Foreign matter 11 adheres to the reticle 1 while it is being transported, and when this foreign matter 11 comes directly below the laser focal point, the laser light is scattered. A lens 12 and a photoelectric conversion element 15 are provided around the focal point.

素子15に一定値以上の出力が生じた時をもって付着異
物あシと判定している。
When the output of the element 15 exceeds a certain value, it is determined that there is an attached foreign substance.

また、レチクルをコンデンサレンズの下に完全にセクト
してから、レチクル面上にレーずを照射し、異物を検出
する方法も本発明者等によシ既に提案されている。更に
、レーザ光スポットをレチクル上に’、y方向に走査す
ることKより、レチクル上面又は下面に異物が付着して
いる場合、該異物のレチクル上のx、y方向座標位置を
検出することもできる。
Furthermore, the inventors have already proposed a method in which a reticle is completely sectioned under a condenser lens and then a laser beam is irradiated onto the reticle surface to detect foreign objects. Furthermore, by scanning the laser beam spot on the reticle in the x and y directions, if a foreign object is attached to the top or bottom surface of the reticle, the coordinate position of the foreign object on the reticle in the x and y directions can be detected. can.

以上の方法によるとIiは、レチクル上の異物を完全に
検出することができ、更Vc:t、y方向座標位置も検
出することができるが、異物の大きさや種類などは判ら
なく、異物がレチクルパターン上に乗っているか否かを
も知ること出来なかった。
According to the above method, Ii can completely detect the foreign object on the reticle and can also detect the Vc: t, y direction coordinate position, but the size and type of the foreign object cannot be determined. I couldn't even tell if it was on the reticle pattern or not.

縮小投影露光装置では、レチクル上のすべてのA物がウ
ェハパターンの欠陥になるわけでなく、レチクル上のパ
ターン1ljli(第1図の下If)では約5μ鳳以上
、非パターンff1([1図の上WJ)では約15μ簿
以上の異物がウェハパターンの欠陥につながるので、異
物の大きさを正確に検出しなければならない。
In the reduction projection exposure apparatus, not all A objects on the reticle become defects in the wafer pattern, and in the pattern 1ljli on the reticle (lower If of Fig. 1), the non-pattern ff1 ([Fig. In the upper WJ), foreign particles larger than about 15 μm can lead to defects in the wafer pattern, so the size of the foreign particles must be detected accurately.

また、レチクル上のパターンは一般にはCrで形成され
ている。第1図に示すように、水銀灯2を点灯して、レ
チクル面を照射した時には。
Further, the pattern on the reticle is generally made of Cr. As shown in FIG. 1, when the mercury lamp 2 is turned on and the reticle surface is irradiated.

これらのCrパターンは照射光を遮断する働きをする。These Cr patterns function to block irradiation light.

従ってこれらのCrパターン上に異物が付着していても
何ら悪影響を及ぼすものでないので、Crパターン上以
外の付着異物を検出しなければならない。
Therefore, even if foreign matter adheres to these Cr patterns, it will not have any adverse effect, so it is necessary to detect foreign matter adhered to areas other than the Cr patterns.

従来のレチクル異物検査装置ではこれらの要求、即ち異
物の大きさ1種類及びレチクルパターンとの関係位置等
を検出することはで妻ない。
Conventional reticle foreign object inspection devices cannot meet these requirements, that is, detect one type of foreign object size and its position relative to the reticle pattern.

従りて、従来はやむなくレチクル上のパターンを一度実
癲にウニノ1上に焼付けた後、ウニノーを魂象し、その
上のパターンを顕微鏡で丹念に検査し、パターンに全く
欠陥を発生しないことを確認した上で、実際の露光作業
に入っているため、準備に2〜5時間もかかっていた。
Therefore, in the past, it was unavoidable to print the pattern on the reticle onto the Unino 1, visualize the Unino, and then carefully inspect the pattern on it with a microscope to ensure that there were no defects at all in the pattern. After confirming the above, the actual exposure work began, which took 2 to 5 hours to prepare.

本発明の目的は、上記した従来技術の欠点をなくシ、レ
チクル上の異物の大きさ、種類及びレチクルパターンと
の関係位置等を検出することができる縮小投影露光装置
のレチクル異物検出装置を提供するにある。
SUMMARY OF THE INVENTION An object of the present invention is to eliminate the above-mentioned drawbacks of the prior art and provide a reticle foreign object detection device for a reduction projection exposure apparatus that can detect the size, type, and position of foreign objects on a reticle in relation to the reticle pattern. There is something to do.

本発明によるレチクル異物検出装置は、縮小投影露光装
置のレチクル上にスポット光を走査して異物を検出する
レチクル異物検出装置において、レチクルパターンをウ
ェハ上に投影露光する光路の途中に進退可能な反射鏡を
設け、#反射鏡によシ、レチクルパターンの実侭を該投
影露光光路外に結像し、該実儂を更に拡大して目視観察
又は自動認識手段によシ、異物の大暑さ、種類及びレチ
クルパターンとの関係位置等を検出可能としであること
を特徴とする装置である。
A reticle foreign matter detection device according to the present invention is a reticle foreign matter detection device that detects foreign matter by scanning a spot light on a reticle of a reduction projection exposure device. A mirror is provided, and the actual image of the reticle pattern is formed outside the projection exposure optical path by the reflecting mirror, and the actual image is further magnified for visual observation or automatic recognition means. This device is characterized by being capable of detecting the type and position relative to the reticle pattern.

本発明によるレチクル異物検出装置の好ましい態様にお
いては、前記のレチクルパターンを投影露光光路外に結
像する照明光に、レチクルパターンをウェハ上に投影露
光する照明光自体を使用する。
In a preferred embodiment of the reticle foreign object detection apparatus according to the present invention, the illumination light itself for projecting and exposing the reticle pattern onto the wafer is used as the illumination light for forming an image of the reticle pattern outside the projection exposure optical path.

本発明によるレチクル異物検出装置の他の好ましいJl
i1様においては、前記の投影露光光路外に#*される
レチクルパターンの夷像が、該レチクルの透過光と、鍍
レチクル下面投射された照明光の反射光の、少なくとも
何れが一方を用いて得られる。
Other preferred Jl of the reticle foreign object detection device according to the present invention
In case i1, the image of the reticle pattern #* projected outside the projection exposure optical path is obtained by using at least one of the transmitted light of the reticle and the reflected light of the illumination light projected onto the bottom surface of the reticle. can get.

以下1本発明の装置な実M例の第5図に基づいて説明す
る。このレチクル異物検出装置を設けた縮小投影露光装
置の実施ガは第1図で説明した装置と同じである。即ち
、水銀灯2よpの照明光はコンデンサレンズ5で集光さ
れて、レチクル1を照明する。レチクル1上のパターン
は細小投影レンズ4によpm小され、クエハ5の上に投
影されてチップ6を形成する。
An actual example of the apparatus of the present invention will be explained below with reference to FIG. 5. The implementation of the reduction projection exposure apparatus provided with this reticle foreign object detection device is the same as the apparatus described in FIG. That is, the illumination light from the mercury lamps 2 to 1 is condensed by the condenser lens 5 and illuminates the reticle 1. The pattern on the reticle 1 is reduced in size by a small projection lens 4 and projected onto a wafer 5 to form a chip 6.

この異物検出装置Iは第5図に図示してないが。This foreign object detection device I is not shown in FIG.

レチクル上にスポット光を走査して異物を検出する手段
を有する。この手段の代表的なものは異物の位置検出手
段であシ1位置検出手段としては、レーザスポット光を
レチクル上(上面及び下面)、x、y方向全WJに走査
し、異物の存在によ如発生するレーず散乱光にょシ異物
の座標位置を求める手段をあげることができる。勿論。
It has means for detecting foreign matter by scanning a spot light on the reticle. A typical example of this means is a means for detecting the position of a foreign object.1 The position detecting means scans a laser spot light over the reticle (upper surface and lower surface) over the entire WJ in the x and y directions, and detects the presence of the foreign object. For example, there is a method for determining the coordinate position of a foreign object based on the laser scattered light that is generated. Of course.

他の位置検出手段でもよい。更に、異物の座標位置を求
めることができなく、単に異物の有無を検出できる手段
であってもよい。
Other position detection means may also be used. Furthermore, it may be possible to use means that cannot determine the coordinate position of a foreign object and can simply detect the presence or absence of a foreign object.

この異物検出装置では、レチクルパターンをウェハ5上
に投影露光する光路の途中で、シリンダ17により回動
せしめられて光路に進退し。
In this foreign object detection device, the cylinder 17 rotates the foreign object in the middle of the optical path for projecting and exposing the reticle pattern onto the wafer 5, and advances and retreats into the optical path.

進入した場合に光路に45[の角度となる反射鏡16が
設けである。従って、水銀灯2よりのレチクル透過光は
反射鏡16によ)直角に反射され、結像レンズ18によ
シ、縮小投影露光装置の光路外においてレチクル1の実
像を19の位置に結像する。20はこの儂を拡大して検
出する為の顕微鏡であシ、前述の異物の位置検出手段が
設けられているときは、#手段に使用したと同じ座標(
:vO、y・)K位置決めされる。21は目視の為の接
隈レンズで、22はレチクル像撮影の為のカメラである
A reflecting mirror 16 is provided which forms an angle of 45[degrees] in the optical path when the light enters. Therefore, the light transmitted through the reticle from the mercury lamp 2 is reflected at right angles by the reflecting mirror 16), and the imaging lens 18 forms a real image of the reticle 1 at a position 19 outside the optical path of the reduction projection exposure apparatus. 20 is a microscope for magnifying and detecting this foreign object, and when the above-mentioned foreign object position detection means is provided, the same coordinates (
:vO,y・)K is positioned. 21 is a close-up lens for visual observation, and 22 is a camera for taking a reticle image.

また、レチクル1への水銀灯2よシの照明光を遮断する
為のシャッタ25が設けられである。
Further, a shutter 25 is provided for blocking illumination light from the mercury lamp 2 to the reticle 1.

更に1反射m16とla儂レンズ18の間に光路に45
度傾斜させて半透鏡27が設けられ1反射照明用ランプ
25よシの光がコンデンサレンズ26で集光され、半透
鏡27及び反射鏡16で反射されてレチクル1の下面を
照射するようにしである。レチクル1の下面よシの反射
光は反射鏡16で反射され、半透11i27を透過し、
結像レンズ18によシ、レチクル1の透過光と同様に1
9の位置にレチクルパターン摩をm像する。
In addition, 45 in the optical path between 1 reflection m16 and la's lens 18
A semi-transparent mirror 27 is provided at an angle of inclination, and the light from one reflective illumination lamp 25 is focused by a condenser lens 26, reflected by the semi-transparent mirror 27 and the reflecting mirror 16, and illuminates the lower surface of the reticle 1. be. The reflected light from the bottom surface of the reticle 1 is reflected by the reflecting mirror 16, passes through the semi-transparent part 11i27,
1 as well as the transmitted light of the reticle 1.
Make an image of the reticle pattern at position 9.

この装置で異物を検出するには、先ずシャッタ25を開
いてレチクル1を上方から照明すると。
To detect a foreign object with this device, first open the shutter 25 and illuminate the reticle 1 from above.

パターンのシルエットが19上に投影され、異物15の
シルエラ)424に投影される。次に、シャッタ2Sを
閉じて水銀灯2の照明光なim断して、反射照明用2ノ
ブ25を点灯すると、レチクル1下面よ〕の反射光によ
)レチクル1上のパターン及び異物の像が19の位置に
形成される。
The silhouette of the pattern is projected onto 19 and then projected onto the shell 424 of foreign object 15. Next, when the shutter 2S is closed to cut off the illumination light from the mercury lamp 2 and the second knob 25 for reflected illumination is turned on, the image of the pattern and foreign matter on the reticle 1 is It is formed at position 19.

レチクル1の透過光又は反射光によシ19の位置に結像
されたレチクルパターン及び異物の像を顕微鏡20によ
シ観察することによシ、異物の大きさ及び種類を知るこ
とができる。更に、その異物がレチクルパターン上に付
着して悪影響を及ぼさないものか、レチクルパターンよ
シはずれて付着しておシ露光に支障があるものかを判定
することができる。
The size and type of the foreign object can be determined by observing the reticle pattern and the image of the foreign object formed at the position 19 by the transmitted light or reflected light of the reticle 1 using the microscope 20. Furthermore, it is possible to determine whether the foreign matter adheres to the reticle pattern and does not have an adverse effect, or whether the foreign matter adheres to the reticle pattern and interferes with exposure.

この装置が異物位置検出手段を有し、予め付着異物の座
標位置が判明している場合は、−黴鏡によシ付着異物を
見出すことが簡単であシ。
If this device has a foreign object position detecting means and the coordinate position of the adhered foreign object is known in advance, it is easy to find the adhered foreign object using a mold mirror.

検出を迅速にすることができると共に、検出を確実に行
うことができる。また、このMINKよる異物検出を透
過光と反射光の両者を使用して行うときは、異物の性質
を完全に求めることができ、そのレチクルをそのtt使
用して露光作業に入りて良いかの判断が容易にできるよ
うになる。勿論、透過光と反射光のいずれか一方のみで
もその目的を適することができる。実施例では1反射照
明用に別のランプ25を使用しているが、露光用ランプ
2の照明光を導光して反射照明用に使用することもでき
る。
Detection can be performed quickly and reliably. In addition, when detecting foreign objects using MINK using both transmitted light and reflected light, the properties of the foreign objects can be completely determined, and it is possible to determine whether it is okay to use the reticle for exposure work. Judgments can be made easily. Of course, only one of the transmitted light and the reflected light can be used for the purpose. In the embodiment, another lamp 25 is used for one reflected illumination, but the illumination light from the exposure lamp 2 can also be guided and used for reflected illumination.

実施例においては *黴鏡による目視観察手段による場
合について述べたが、これに代えてパターン認識技術を
用いて、異物の大きさ、種類及びレチクルパターンとの
関係位置等を自動的に検出し、判定する装置を使用する
ことができる。
In the embodiment, *The case was described using a visual observation means using a mold mirror, but instead of this, pattern recognition technology is used to automatically detect the size, type, and position of the foreign object in relation to the reticle pattern. A device for determining this can be used.

従来レチクル上の異物検査には、レチクル上のパターン
を一度実廟にウェハ上に焼付けた後、ウェハを現像し、
その上のパターンを丹念に検査するととKよ)、レチク
ル上の異物を検査していたため、前述のように2〜5時
間の長時間要していた。
Conventionally, foreign matter inspection on a reticle involves printing the pattern on the reticle onto a wafer, then developing the wafer, and then
It took a long time (2 to 5 hours) to carefully inspect the pattern on the reticle (K), as it was inspecting for foreign objects on the reticle, as mentioned above.

本発明の装置にて、スポット光走査により異物の付着が
確Iilされたときは、レチクルパターンをウェハ上に
焼付、amすることなく、直接投影露光光路外KJ侭せ
しめ、顕微鏡で拡大して観察することができるので異物
の検査時間を著しく短縮することができる。更K、この
異物検出装置が異物のx、y座標位置を検出する手段を
有するときは、先ず腋手段により異物(レチクル上面及
び下面。)の座標位置を検出する。
In the apparatus of the present invention, when the adhesion of foreign matter is confirmed by spot light scanning, the reticle pattern is printed onto the wafer, and without being amperated, the reticle pattern is directly projected outside the exposure optical path and observed under magnification with a microscope. Therefore, the inspection time for foreign substances can be significantly shortened. Further, when this foreign object detection device has a means for detecting the x and y coordinate position of the foreign object, first, the coordinate position of the foreign object (the upper and lower surfaces of the reticle) is detected by the armpit means.

その時間は通常1分以内である。また、異物数は10個
程度が普通である。次に、レチクルの透過光と反射光の
少なくとも何れか一方によシ。
The time is usually within 1 minute. Further, the number of foreign objects is usually about 10. Next, at least one of the transmitted light and reflected light of the reticle is used.

レチクルパターンを投影露光光路外に結像せしめて、こ
れを顕微鏡で拡大し目am察する。この場合、A物の座
標位置が既に検出されてあり。
The reticle pattern is imaged outside the projection exposure optical path, magnified with a microscope, and visually observed. In this case, the coordinate position of object A has already been detected.

S物の数も10個程度である為、異物が露光に支障を来
すものであるかどうかの判断(異物の大きさ、種類及び
レチクルパターンとの関係位置等による。)を迅速且つ
確実に行なうことができる。この所要時間は2〜5分で
ある。従って全体で5〜4分で完全な検査が終了する。
Since the number of S objects is about 10, it is necessary to quickly and reliably determine whether or not the foreign objects are interfering with exposure (depending on the size, type, and position of the foreign objects in relation to the reticle pattern). I can do it. The time required for this is 2 to 5 minutes. Therefore, a complete inspection can be completed in a total of 5 to 4 minutes.

本発明の装置によるレチクル上の異物検出は。Detection of foreign matter on a reticle by the apparatus of the present invention.

露光作業の途中でも、レチクルを取〕はずすことなく、
露光時と全く同じ条件で照明して検査することがで自 
S光作業中に付着した異物を4完全にチェックすること
が出来るので、優れた効果をあげることができる。
Even in the middle of exposure work, you can do it without removing the reticle.
It is possible to automatically inspect by illuminating under the same conditions as during exposure.
Since it is possible to completely check for foreign substances that have adhered during S light work, excellent effects can be achieved.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明の装置を取付ける縮小投影レンズの概念
を示す代表例の要部斜視図、1m2図は従来の異物検出
装置の一例の構成を示す概略縦断面図、JII5図は本
発明の装置の実施例の構成を示す各部材の関連斜視図で
ある。 1・・・レチクル、    2・・・水銀灯、S、26
・・・コンデンサレ゛ンズ、 4・・・縮小投影レンズ、5・・・ウェハ。 6・・・チップ、7,11,15・・・異物。 16・・・反射鏡、    17・・・シリンダ、18
・・・結像レンズ、 19・・・レチクルパターンのm傷位置。 20・・・顕微鏡、21・・・接眼レンズ、22・・・
カメ2.25・・・シャッタ。 24・・・異物の儂、25・・・反射照明用ラング。 27・・・半透鏡。 第1犯 /? 2 囚 オ 3 の
Fig. 1 is a perspective view of main parts of a typical example showing the concept of a reduction projection lens to which the device of the present invention is attached, Fig. 1m2 is a schematic vertical sectional view showing the configuration of an example of a conventional foreign object detection device, and Fig. FIG. 3 is a related perspective view of each member showing the configuration of an embodiment of the device. 1... Reticle, 2... Mercury lamp, S, 26
... Condenser lens, 4... Reduction projection lens, 5... Wafer. 6... Chip, 7, 11, 15... Foreign matter. 16...Reflector, 17...Cylinder, 18
...Imaging lens, 19...m scratch position on reticle pattern. 20... Microscope, 21... Eyepiece, 22...
Turtle 2.25...Shutter. 24...Foreign object, 25...Rung for reflective lighting. 27...Semi-transparent mirror. First offender/? 2 prisoner 3

Claims (1)

【特許請求の範囲】 (1)  縮小投影露光装置のレチクル上の上面又は下
面をスポット光によりて走査して異物を検出するレチク
ル異物検出装置において、レチクルパターンなりエバ上
に投影露光する光路の途中に進退可能な反射鏡を設け、
該反射鏡により、レチクルパターンの実像を該投影露光
光路外に結儂し、鋏実儂を更に拡大して目視鋼Sあるい
は自動g*手段によ#)異物の大きさ、m類及びレチク
ルパターンとの関係位置等を検出可能としであることを
特徴とするレチクル異物検出装置。 (2)前記のレチクルパターンを投影露光光路外に結儂
する照明光に、レチクルパターンをウェハ上に投影露光
する照明光自体を使用する特許請求の範囲311項のレ
チクル異物検出装置。 (5)  前記の投影露光光路外に結儂されるレチクル
パターンの実像が、該レチクルからの透過光か、腋しチ
クル下ET1半透傭、進退可能な反射鏡を介し投射され
た照明光の反射光が少・なくとも何れか一方を用いて得
る特許請求の範囲第1項のレチクル異物検出装置。
[Scope of Claims] (1) In a reticle foreign matter detection device that detects foreign matter by scanning the top or bottom surface of a reticle with spot light in a reduction projection exposure device, a reticle foreign matter detection device detects foreign matter by scanning the top or bottom surface of a reticle with spot light, in the middle of the optical path for projection exposure onto a reticle pattern or evaporator. A reflector that can move forward and backward is installed,
Using the reflector, the real image of the reticle pattern is projected outside the projection exposure optical path, and the actual image of the reticle pattern is further enlarged to determine the size of the foreign object, the size of the foreign object, and the reticle pattern by visual inspection or automatic means. 1. A reticle foreign object detection device, characterized in that it is capable of detecting the relative position, etc. of a reticle. (2) The reticle foreign matter detection apparatus according to claim 311, wherein the illumination light that projects and exposes the reticle pattern onto the wafer is used as the illumination light that directs the reticle pattern out of the projection exposure optical path. (5) The real image of the reticle pattern formed outside the projection exposure optical path is either the transmitted light from the reticle or the illumination light projected through the semi-transparent, retractable reflector ET1 below the axillary tickle. A reticle foreign object detection device according to claim 1, wherein the reflected light is obtained by using at least one of them.
JP57033818A 1982-03-05 1982-03-05 Detector for foreign matter in reticle Pending JPS58152243A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57033818A JPS58152243A (en) 1982-03-05 1982-03-05 Detector for foreign matter in reticle

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57033818A JPS58152243A (en) 1982-03-05 1982-03-05 Detector for foreign matter in reticle

Publications (1)

Publication Number Publication Date
JPS58152243A true JPS58152243A (en) 1983-09-09

Family

ID=12397056

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57033818A Pending JPS58152243A (en) 1982-03-05 1982-03-05 Detector for foreign matter in reticle

Country Status (1)

Country Link
JP (1) JPS58152243A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6062122A (en) * 1983-09-16 1985-04-10 Fujitsu Ltd Inspection of mask pattern
JPS60167327A (en) * 1984-02-10 1985-08-30 Hitachi Ltd Inspection of photo mask
JPS62159029A (en) * 1986-01-08 1987-07-15 Canon Inc Inspecting device for defect of reticle mask
JPS63311515A (en) * 1987-06-15 1988-12-20 Canon Inc Orthogonal/parallel adjusting device

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6062122A (en) * 1983-09-16 1985-04-10 Fujitsu Ltd Inspection of mask pattern
JPS6349366B2 (en) * 1983-09-16 1988-10-04 Fujitsu Ltd
JPS60167327A (en) * 1984-02-10 1985-08-30 Hitachi Ltd Inspection of photo mask
JPS62159029A (en) * 1986-01-08 1987-07-15 Canon Inc Inspecting device for defect of reticle mask
JPS63311515A (en) * 1987-06-15 1988-12-20 Canon Inc Orthogonal/parallel adjusting device

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