JPH03230544A - Apparatus for inspecting appearance of wafer - Google Patents

Apparatus for inspecting appearance of wafer

Info

Publication number
JPH03230544A
JPH03230544A JP2673490A JP2673490A JPH03230544A JP H03230544 A JPH03230544 A JP H03230544A JP 2673490 A JP2673490 A JP 2673490A JP 2673490 A JP2673490 A JP 2673490A JP H03230544 A JPH03230544 A JP H03230544A
Authority
JP
Japan
Prior art keywords
wafer
light
film
different substance
reflected
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2673490A
Other languages
Japanese (ja)
Inventor
Hisafumi Miyatake
宮竹 尚史
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP2673490A priority Critical patent/JPH03230544A/en
Publication of JPH03230544A publication Critical patent/JPH03230544A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To simply detect a position of a different substance existing in a short time by radiating laser light of a single wavelength having a spot diameter of approximately 5 to 10mum to a wafer surface formed with a multi-layer film and observing an interference fringe generated by the light reflected from the different substance and by the light reflected on the film. CONSTITUTION:An apparatus for inspecting appearance of a wafer comprises an optical system and a laser oscillator 1 for radiating laser light having a spot size of 5 to 10mum on a wafer 5 surface with a multi-layer film formed on one principal face and an optical system and an image-pickup camera 11 for acquiring reflected light by the laser light. If a different substance 15 exists in an upper film 7 or on a lower film 6, an interference fringe 16 due to difference in light paths for the light reflected from the film and the light reflected from the different substance is picked up on a pattern 14 in a region of a laser light spot 13 in addition to the different substance 15. When the different substance is on the upper film 7, no interference fringe is observed. Thus a precise position of the different substance can be known.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、−主面に多層膜が形成されたウェーハに異物
の有無を検出するとともにこの異物が前記多層膜のどの
位置に存在するかを検査するウェーハ外観検査装置に関
する。
[Detailed Description of the Invention] [Industrial Application Field] The present invention provides a method for: - detecting the presence or absence of foreign matter in a wafer having a multilayer film formed on its main surface, and determining where in the multilayer film this foreign matter is present; The present invention relates to a wafer appearance inspection device for inspecting wafers.

〔従来の技術〕[Conventional technology]

従来、この種のウェーハ外観検査装置は、特に、専用の
装置はなく、通常、ウェーハに付着している異物の有無
を検査する場合は、汎用の顕微鏡とモニターでウェーハ
面を観察し、基準の異物付きパターンと比較しながら検
査していた。
Conventionally, this type of wafer appearance inspection equipment did not have any special equipment, and when inspecting the presence or absence of foreign substances attached to a wafer, the wafer surface was observed with a general-purpose microscope and monitor, and a standard I was inspecting it while comparing it with the pattern with foreign matter.

また、異物が多層膜のどの位置に存在するのかを検査す
る場合、ウェーハ面に白色光を照射し、焦点位置を変え
ることによって、どの位置に存在するかを顕微鏡あるい
はモニターにより観察して検査を行なっていた。
In addition, when inspecting where a foreign substance is present in a multilayer film, the wafer surface is irradiated with white light, the focus position is changed, and the position is observed using a microscope or a monitor. I was doing it.

〔発明が解決しようとする課題〕[Problem to be solved by the invention]

しかしながら、上述した従来のウェーハ外観検査装置は
、異物をどの位置にあるか検査するのに顕微鏡の焦点合
せを何度か繰返して行なわなければならず、工数がかか
るばかりか、熟練を必要とする欠点がある。
However, the conventional wafer visual inspection equipment described above requires repeated focusing of the microscope several times in order to inspect the position of foreign objects, which not only takes many man-hours but also requires skill. There are drawbacks.

本発明の目的は、かかる欠点を解消し、より操作が簡単
で短時間で検査出来るウェーハ外観検査装置を提供する
ことである。
SUMMARY OF THE INVENTION An object of the present invention is to provide a wafer visual inspection apparatus that eliminates these drawbacks and is easier to operate and can be inspected in a shorter time.

〔課題を解決するための手段〕[Means to solve the problem]

本発明のウェーハ外観検査装置は、−主面に多層膜が形
成されたウェーハに異物の有無を検出するとともにこの
異物が前記多層膜のどの位置に存在するかを検査するウ
ェーハ外観検査装置において、前記ウェーへ面に5〜1
0 /l mのスポット径をもつレーザ光を照射する光
学系及びレーザ発振器と、このレーザ光による反射光を
取り込む光学系及び撮像カメラとを備え、前記多層膜内
に発生する干渉縞を観察することにより前記異物の存在
位置を知ることを特徴としている。
The wafer appearance inspection apparatus of the present invention is a wafer appearance inspection apparatus that detects the presence or absence of foreign matter on a wafer having a multilayer film formed on its main surface and inspects the position of the foreign material on the multilayer film, comprising: 5 to 1 on the surface of the wafer
It is equipped with an optical system and a laser oscillator that irradiate a laser beam with a spot diameter of 0/l m, and an optical system and an imaging camera that take in the reflected light from this laser beam, and observes interference fringes generated within the multilayer film. The present invention is characterized in that the location of the foreign object is known by this.

〔実施例〕〔Example〕

次に、本発明について図面を参照して説明する。 Next, the present invention will be explained with reference to the drawings.

第1図は本発明の一実施例を示すウェーハ外観検査装置
のブロンク図である。このウェーハ外観検査装置は、同
図に示すように、多層膜が形成されたウェーハ5の而に
白色光を照射する白色ランプ4と、レーザ光を発光する
単一波長レーザ光発振器1と、レーザ光のスポット径を
5〜10μm程度に拡げるビームエクスパンダ3と、ウ
ェーハ5に照射する光を前記白色光あるいはレーザ光に
切替る切換ミラー3と、ウェーハ5より反射する白色光
及びレーザ光を受光プリズム9、ハーフミラ−10及び
ミラー8を介して取り込む撮像カメラ11とを有してい
る。
FIG. 1 is a bronch diagram of a wafer visual inspection apparatus showing an embodiment of the present invention. As shown in the figure, this wafer appearance inspection apparatus includes a white lamp 4 that irradiates white light onto a wafer 5 on which a multilayer film is formed, a single wavelength laser beam oscillator 1 that emits laser light, and a laser beam oscillator 1 that emits a laser beam. A beam expander 3 that expands the spot diameter of light to about 5 to 10 μm, a switching mirror 3 that switches the light irradiated onto the wafer 5 to the white light or laser light, and receives the white light and laser light reflected from the wafer 5. It has a prism 9, a half mirror 10, and an imaging camera 11 that captures images via a mirror 8.

第2図(a)及び(b)は第1図のウェーハ外観検査装
置の動作を説明するための撮像カメラの視野におけるパ
ターンを示す図である。次に、このウェーハ外観検査装
置の動作について説明する。
FIGS. 2(a) and 2(b) are diagrams showing patterns in the field of view of an imaging camera for explaining the operation of the wafer visual inspection apparatus shown in FIG. Next, the operation of this wafer visual inspection apparatus will be explained.

まず、通常の異物の有無の検査に際しては、第1図に示
すように、白色ランプ4を点灯し、白色光を発生し、切
換ミラー3を点線で示すように切換え、白色光をウェー
ハ5の表面を照射する0次に、この白色光の反射光をミ
ラー8で反射され、ハーフミラ−10を透過し、撮像カ
メラ11に入光し、ウェーハ5の表面を撮像する。
First, in a normal inspection for the presence of foreign matter, as shown in FIG. 1, the white lamp 4 is turned on to generate white light. After the zero-order irradiation of the surface, this reflected white light is reflected by the mirror 8, transmitted through the half mirror 10, enters the imaging camera 11, and images the surface of the wafer 5.

また、異物の存在位置を観察する場合は、第1図におけ
る切換ミラー3を実線で示すように切換える。次に、単
一波長レーザ光発振器1でレーザ光を発生し、ビームエ
クスパンダ2により、レーザ光スポットを約8μm程度
の直径に拡げ、切替ミラー3によって、ウェーハ5の表
面に照射する。
Further, when observing the location of a foreign object, the switching mirror 3 in FIG. 1 is switched as shown by the solid line. Next, a single wavelength laser beam oscillator 1 generates a laser beam, a beam expander 2 expands the laser beam spot to a diameter of about 8 μm, and a switching mirror 3 irradiates the surface of the wafer 5 with the laser beam.

レーザ光は、上層膜7で一部反射し、他は透過する。ま
た、上層膜7を透過した光は、下層膜6の表面で一部が
反射し、残りは、透過し、下地面で反射する。これらの
反射光はすべて受光プリズム9及びハーフミラ−10を
通して撮像カメラ11で捉え、パターンが撮像される。
A part of the laser beam is reflected by the upper layer film 7, and the other part is transmitted. Further, part of the light transmitted through the upper layer film 7 is reflected on the surface of the lower layer film 6, and the rest is transmitted and reflected on the underlying surface. All of these reflected lights are captured by an imaging camera 11 through a light receiving prism 9 and a half mirror 10, and a pattern is captured.

勿論、膜中にある異物15からも反射光が発生するので
、異物15も撮影される。
Of course, since reflected light is also generated from the foreign matter 15 in the film, the foreign matter 15 is also photographed.

ここで、異物15が上層膜7中あるいは下層膜6の上に
ある場合は、第2図(a)に示すように、膜からの反射
光と異物からの反射光との光路差により、レーザ光スポ
ット13の領域中のパターン14に異物15とは別に干
渉縞16が撮像される。
Here, if the foreign matter 15 is in the upper layer film 7 or on the lower layer film 6, as shown in FIG. 2(a), the laser beam is In addition to the foreign matter 15, interference fringes 16 are imaged in the pattern 14 in the area of the light spot 13.

このことにより、逆に、この干渉縞があるか否かで、異
物が膜中にあるか否かが判明する。さらに異物が上層膜
7の上にある場合は、第2図(b)に示すように、干渉
縞が認められない。
By this, conversely, it becomes clear whether or not foreign matter is present in the film, depending on whether or not these interference fringes are present. Further, when foreign matter is on the upper layer film 7, no interference fringes are observed as shown in FIG. 2(b).

第3図は本発明の他の実施例を示すウェーハ外観検査装
置のブロック図である。このウェーハ外観検査装置は、
同図に示すように、前述の実施例のウェーハ外観検査装
置に投射光経路中に入射角度を可変する入射角調整プリ
ズム17を設けたことである。このウェーハ外観検査装
置は、入射角度を膜の屈折率によって種々変えることが
出来るので、より精密な異物の位置を知ることが出来る
利点がある。
FIG. 3 is a block diagram of a wafer visual inspection apparatus showing another embodiment of the present invention. This wafer visual inspection equipment is
As shown in the figure, the wafer visual inspection apparatus of the above embodiment is provided with an incident angle adjustment prism 17 that changes the incident angle in the projection light path. This wafer appearance inspection apparatus has the advantage that the incident angle can be varied depending on the refractive index of the film, so that the position of foreign particles can be determined more precisely.

〔発明の効果〕〔Effect of the invention〕

以上説明したように本発明は、多層膜が形成されたウェ
ーハ面上に、5〜10μm程度のスポット径をもつ単一
波長のレーザ光を照射し、異物からの反射光と膜での反
射光とで発生する干渉縞を観察することによって、異物
の存在位置を容易に、短時間で知ることの出来るウェー
ハ外観検査装置が得られるという効果がある。
As explained above, the present invention irradiates a single wavelength laser beam with a spot diameter of about 5 to 10 μm onto the wafer surface on which a multilayer film is formed, and the reflected light from the foreign matter and the reflected light from the film are emitted. By observing the interference fringes generated by this method, there is an effect that a wafer appearance inspection apparatus can be obtained that can easily and quickly determine the location of foreign matter.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本発明の一実施例を示すウェーハ外観検査装置
のブロック図、第2図(a)及び(b)は第1図のウェ
ーハ外観検査装置の動作を説明するための撮像カメラの
視野におけるパターンを示す図、第3図は本発明の他の
実施例を示すウェーハ外観検査装置のブロック図である
。 ■・・・単一波長レーザ光発振器、2・−ビームエクス
パンダ、3・・−切換ミラー、4・・白色ランプ、5・
・・ウェーハ、6・・・■層膜、7−・・上層膜、8・
・ミラ9・−・受光プリズム、10−・ハーフミラ−1
11・・・撮像カメラ、12・・欠番、13・・レーザ
光スポット、14・・・パターン、15・・・異物、1
6・・・干渉縞、17・・・入射角調整プリズム。
FIG. 1 is a block diagram of a wafer visual inspection apparatus showing an embodiment of the present invention, and FIGS. 2(a) and (b) are views of an imaging camera for explaining the operation of the wafer visual inspection apparatus shown in FIG. FIG. 3 is a block diagram of a wafer visual inspection apparatus showing another embodiment of the present invention. ■...Single wavelength laser beam oscillator, 2...Beam expander, 3...-Switching mirror, 4...White lamp, 5...
・・Wafer, 6・・Layer film, 7−・Upper layer film, 8・
・Mirra 9--Light receiving prism, 10-・Half mirror-1
11... Imaging camera, 12... Missing number, 13... Laser light spot, 14... Pattern, 15... Foreign object, 1
6... Interference fringes, 17... Incident angle adjustment prism.

Claims (1)

【特許請求の範囲】[Claims] 一主面に多層膜が形成されたウェーハに異物の有無を検
出するとともにこの異物が前記多層膜のどの位置に存在
するかを検査するウェーハ外観検査装置において、前記
ウェーハ面に5〜10μmのスポット径をもつレーザ光
を照射する光学系及びレーザ発振器と、このレーザ光に
よる反射光を取り込む光学系及び撮像カメラとを備え、
前記多層膜内に発生する干渉縞を観察することにより前
記異物の存在位置を知ることを特徴とするウェーハ外観
検査装置。
In a wafer appearance inspection device that detects the presence or absence of foreign matter on a wafer having a multilayer film formed on one principal surface and inspects the position of the foreign matter on the multilayer film, a spot of 5 to 10 μm is placed on the wafer surface. An optical system and a laser oscillator that emit a laser beam having a diameter, an optical system and an imaging camera that capture reflected light from the laser beam,
A wafer appearance inspection apparatus characterized in that the location of the foreign matter is known by observing interference fringes generated within the multilayer film.
JP2673490A 1990-02-05 1990-02-05 Apparatus for inspecting appearance of wafer Pending JPH03230544A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2673490A JPH03230544A (en) 1990-02-05 1990-02-05 Apparatus for inspecting appearance of wafer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2673490A JPH03230544A (en) 1990-02-05 1990-02-05 Apparatus for inspecting appearance of wafer

Publications (1)

Publication Number Publication Date
JPH03230544A true JPH03230544A (en) 1991-10-14

Family

ID=12201540

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2673490A Pending JPH03230544A (en) 1990-02-05 1990-02-05 Apparatus for inspecting appearance of wafer

Country Status (1)

Country Link
JP (1) JPH03230544A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003077828A (en) * 2001-07-11 2003-03-14 Samsung Electronics Co Ltd System and method for photolithography process
JP2005189029A (en) * 2003-12-25 2005-07-14 National Institute Of Advanced Industrial & Technology Method for detecting substrate contamination particle and its apparatus
JP2017058225A (en) * 2015-09-16 2017-03-23 株式会社東芝 Device, method, and program for detecting defect
JP2019132783A (en) * 2018-02-02 2019-08-08 株式会社島津製作所 Hardness testing machine

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003077828A (en) * 2001-07-11 2003-03-14 Samsung Electronics Co Ltd System and method for photolithography process
JP2005189029A (en) * 2003-12-25 2005-07-14 National Institute Of Advanced Industrial & Technology Method for detecting substrate contamination particle and its apparatus
JP2017058225A (en) * 2015-09-16 2017-03-23 株式会社東芝 Device, method, and program for detecting defect
JP2019132783A (en) * 2018-02-02 2019-08-08 株式会社島津製作所 Hardness testing machine

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