JP2947916B2 - Surface condition inspection device - Google Patents
Surface condition inspection deviceInfo
- Publication number
- JP2947916B2 JP2947916B2 JP29526490A JP29526490A JP2947916B2 JP 2947916 B2 JP2947916 B2 JP 2947916B2 JP 29526490 A JP29526490 A JP 29526490A JP 29526490 A JP29526490 A JP 29526490A JP 2947916 B2 JP2947916 B2 JP 2947916B2
- Authority
- JP
- Japan
- Prior art keywords
- inspection
- light
- pellicle
- reticle
- inspected
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Description
【発明の詳細な説明】 [産業上の利用分野] 本発明は、例えば半導体製造工程で用いるレチクルま
たはフォトマスクなどの基板上にペリクル保護膜を装着
したときのペリクル保護膜面上およびレチクル基板上に
付着した微細なゴミなどの異物を精度良く検出する装置
に代表される面状態検査装置に関するものである。The present invention relates to a pellicle protective film surface and a reticle substrate when a pellicle protective film is mounted on a substrate such as a reticle or a photomask used in a semiconductor manufacturing process. The present invention relates to a surface state inspection apparatus represented by an apparatus for accurately detecting foreign matter such as fine dust adhering to a surface.
[従来技術] 一般にIC製造工程においては、レチクルまたはフォト
マスクなどの基板上に形成された露光用の回路パターン
を半導体焼き付け装置(ステッパーまたはマスクアライ
ナー)によりレジストが塗布されたウエハ面上に転写し
てICを製造する。[Prior Art] Generally, in an IC manufacturing process, a circuit pattern for exposure formed on a substrate such as a reticle or a photomask is transferred onto a wafer surface coated with a resist by a semiconductor printing apparatus (stepper or mask aligner). To manufacture ICs.
この際、基板面上にゴミなどの異物が付着している
と、この異物が同時に転写されIC製造の歩留りを低下さ
せる。したがって、IC製造工程においては、基板上の異
物を検出することが不可欠である。At this time, if foreign matter such as dust adheres to the substrate surface, the foreign matter is transferred at the same time, which lowers the yield of IC manufacturing. Therefore, in the IC manufacturing process, it is indispensable to detect foreign substances on the substrate.
第5図は従来の異物検査装置を示す。この装置は異物
が等方性の光を散乱するという性質を利用した例であ
る。レーザー光源61からのレーザービームは、振動ミラ
ー(回転ミラー)64およびf−θレンズ65を介し、ハー
フミラー66により2方向に分けられ上下のミラー67、6
7′によって、それぞれレチクル68の裏面(上面)68aお
よびパターン面(下面)68bに所定の走査線に沿って照
射される。その際、レチクル68の裏面68aの異物散乱光
は直接反射光や他の光を検知しないように設定された検
出系69により検出される。また上側ペリクル面70の異物
散乱光は同様に検出系72により検出される。レチクル68
のパターン面68bでの異物散乱光は同様に設けられた検
出系73により検出され、下側ペリクル面71での異物散乱
光は、検出系74により検出される。FIG. 5 shows a conventional foreign matter inspection apparatus. This device is an example utilizing the property that foreign matter scatters isotropic light. A laser beam from a laser light source 61 is divided into two directions by a half mirror 66 via a vibrating mirror (rotating mirror) 64 and an f-θ lens 65 and upper and lower mirrors 67 and 6.
7 'irradiates the back surface (upper surface) 68a and the pattern surface (lower surface) 68b of the reticle 68 along predetermined scanning lines. At this time, the foreign matter scattered light on the back surface 68a of the reticle 68 is detected by a detection system 69 set so as not to detect directly reflected light or other light. Further, foreign matter scattered light on the upper pellicle surface 70 is similarly detected by the detection system 72. Reticle 68
The foreign matter scattered light on the pattern surface 68b is detected by the detection system 73 provided similarly, and the foreign matter scattered light on the lower pellicle surface 71 is detected by the detection system 74.
これらの検出は、レチクルがAの方向に作動すること
により全面をレーザービームで走査することによって行
われる。These detections are performed by scanning the entire surface with a laser beam by operating the reticle in the direction A.
[発明が解決しようとする課題] しかしながら、近年、半導体製造における解像最小線
巾の微細化に伴ってレチクル面およびペリクル面上での
微粒子検出においても分解能の向上が要求されている。
その要求に応えるためには、レチクル上において以前よ
りもビーム径を絞らなければならず入射NAは必然的に大
きくなる。この場合ペリクル面上では逆にビーム径が広
がってしまう。したがって、レチクル面とペリクル面を
同時に検査するペリクル面上では充分な分解能が得られ
ない。[Problems to be Solved by the Invention] However, in recent years, with the miniaturization of the minimum line width of resolution in semiconductor manufacturing, an improvement in resolution has been required also in fine particle detection on a reticle surface and a pellicle surface.
To meet the demand, the beam diameter on the reticle must be narrower than before, and the incident NA is inevitably large. In this case, on the pellicle surface, the beam diameter increases conversely. Therefore, a sufficient resolution cannot be obtained on the pellicle surface for simultaneously inspecting the reticle surface and the pellicle surface.
本発明は上記従来技術の欠点に鑑みなされたものであ
って、例えば複数の被検査面を効率良く高精度で走査可
能な面状態検査装置の提供を目的とする。The present invention has been made in view of the above-described drawbacks of the related art, and has as its object to provide, for example, a surface state inspection apparatus that can efficiently scan a plurality of inspection surfaces with high accuracy.
[課題を解決するための手段] 前記目的を達成するため、本発明によれば、基板上に
ペリクル膜を装着した被検査物の面状態の検査装置であ
って、被検査物に検査用光束を照射する光照射手段と、
被検査物の面状態を検査すべく被検査物からの出射光を
検出する光検出手段と、前記検査用光束の集光状態を変
化させるための集光状態調整手段と、前記被検査物を往
復移動させる移送手段と、前記集光状態調整手段と前記
移送手段の動作を制御するための制御手段とを具備し、
該制御手段は前記移送手段による被検査物の往動時と復
動時で各々前記基板面と前記ペリクル膜面のうちの異な
る面に集光位置を合わせてそれぞれ検査を行う。Means for Solving the Problems To achieve the above object, according to the present invention, there is provided an inspection apparatus for inspecting a surface state of an inspection object having a pellicle film mounted on a substrate. Light irradiation means for irradiating
Light detecting means for detecting light emitted from the inspection object to inspect the surface state of the inspection object; light-condensing state adjusting means for changing the light-condensing state of the inspection light beam; and Transfer means for reciprocating, comprising a control means for controlling the operation of the light collecting state adjusting means and the transfer means,
The control unit performs the inspection by adjusting the light condensing position to a different one of the substrate surface and the pellicle film surface when the inspection object is moved forward and backward by the transfer unit.
[実施例] 第1図に本発明による検査フローの一例を示す。第2
図は、そのフローを実施するための装置概略を示す。第
2図において、1はレチクルであり、下面がクロム基板
面(Cr面)であり、上面がブランク面(Bl面)である。
2は上側ペリクル面(Po面)、2′は下側ペリクル面
(Pu面)である。レーザー光源12より発せられた光束
は、ビームエキスパンダー11を介し一定の光束に拡げら
れ、回転ミラー9、f−θレンズ8を介することによっ
て、レチクル1上に集光し紙面に対して垂直方向に直線
走査する。Embodiment FIG. 1 shows an example of an inspection flow according to the present invention. Second
The figure shows an outline of an apparatus for carrying out the flow. In FIG. 2, 1 is a reticle, the lower surface is a chromium substrate surface (Cr surface), and the upper surface is a blank surface (Bl surface).
2 is an upper pellicle surface (Po surface) and 2 'is a lower pellicle surface (Pu surface). The light beam emitted from the laser light source 12 is spread to a constant light beam through the beam expander 11, and is condensed on the reticle 1 by passing through the rotating mirror 9 and the f-θ lens 8 to be perpendicular to the paper surface. Scan linearly.
入射ビームピント切換え部10は焦点位置を切換えるた
めの付加レンズを光路中に出し入れ可能な機構であり、
付加レンズを光路中に挿入しない場合には、レチクル面
(Cr面およびBl面)にピントが合っている。13、14、1
5、16は光検出器である。レチクル面(Cr面およびBl
面)からの異物散乱光を検出する光検出器13、15は入射
ビームに対して後方散乱光を検出するように配置され
る。ペリクル面(Po、Pu面)からの異物散乱光を検出す
る光検出器14、16は入射ビームに対して前方散乱光を検
出するように配置される。The incident beam focus switching unit 10 is a mechanism capable of taking an additional lens for switching the focal position into and out of the optical path,
When the additional lens is not inserted into the optical path, the reticle surface (Cr surface and Bl surface) is in focus. 13, 14, 1
5 and 16 are photodetectors. Reticle surface (Cr surface and Bl
The photodetectors 13 and 15 for detecting the scattered light of the foreign matter from the surface are arranged so as to detect the backscattered light with respect to the incident beam. Photodetectors 14 and 16 for detecting scattered light from a pellicle surface (Po and Pu surfaces) are arranged to detect forward scattered light with respect to an incident beam.
3はレチクルステージを示し、O点が初期位置であ
り、Aの方向に往動とし、Bの方向に復動とする。O点
位置にある時にはレチクルハンド6によりレチクル1を
180゜回転可能である。Reference numeral 3 denotes a reticle stage, where point O is an initial position, which is forward in the direction of A and backward in the direction of B. When at the point O, the reticle 1 is
It can rotate 180 ゜.
レチクル1は検査領域を第3図に示すように2分割し
(S領域、T領域)、Cr面およびBl面検査時に検査域S
およびTごとに行うことが望ましい。これは入射ビーム
40が斜入射であるために、ペリクル支持枠30に遮られる
ため、初めSの領域を検査した後にレチクルを180゜反
転させ改めてTの領域を検査するからである。The reticle 1 divides the inspection area into two parts (S area and T area) as shown in FIG.
And it is desirable to carry out every T. This is the incident beam
Because the oblique incidence 40 is blocked by the pellicle support frame 30, the reticle is turned 180 ° and then the T area is inspected again after inspecting the S area first.
第1図の検査フローについて説明する。 The inspection flow of FIG. 1 will be described.
レチクル面(Cr、Bl面)またはペリクル面(Po、Pu
面)どちらから検査をはじめてもよい。本実施例でにお
いてはレチクル面から検査をはじめる。Reticle surface (Cr, Bl surface) or pellicle surface (Po, Pu)
Inspection may be started from either side. In this embodiment, the inspection starts from the reticle surface.
往動時にCrおよびBl面の1/2領域(SまたはT)を検
査する(ステップ41)。次にピント位置をペリクル面
(Po、Pu面)に切換える(ステップ42)。復動時にペリ
クル面全面の検査を行う(ステップ43)。その後もう一
度ピント位置をレチクル面(Cr、Bl面)に切換える(ス
テップ44)。続いてレチクルを180゜反転する(ステッ
プ45)。最後にレチクルの残りの1/2面(TまたはS)
を往動時に検査する(ステップ46)。In the forward movement, a half area (S or T) of the Cr and Bl planes is inspected (step 41). Next, the focus position is switched to the pellicle surface (Po, Pu surface) (step 42). At the time of return, the entire pellicle surface is inspected (step 43). Thereafter, the focus position is switched again to the reticle plane (Cr, Bl plane) (step 44). Subsequently, the reticle is turned 180 ° (step 45). Finally, the remaining half of the reticle (T or S)
Is inspected at the time of forward movement (step 46).
ここでレチクル面上とペリクル面上では検出要求分解
能に差があり、ペリクル面上の検査の際には、レチクル
面上程の精度はいらない。よってペリクル面上において
は、その要求分解能に相当する太いビーム径で走査検出
を行いレチクルの送りスピードを速くすることができ
る。Here, there is a difference in required resolution between the reticle surface and the pellicle surface, and the inspection on the pellicle surface does not require as high accuracy as the reticle surface. Therefore, on the pellicle surface, scanning detection is performed with a large beam diameter corresponding to the required resolution, and the reticle feed speed can be increased.
次に第二の実施例について述べる。 Next, a second embodiment will be described.
前記第一の実施例においては、ペリクル面上の散乱光
を検出する光検出器を入射ビームに対して前方散乱光を
受光する配置としている。よって、ペリクル支持枠付近
の検査時のペリクル枠からのフレア光の影響が無く。ペ
リクル面検査時には全面検査を行うことができる。しか
し、装置の空間的制約などにより、受光系を第5図のよ
うに入射ビームに対して後方散乱光を受光する配置をと
らなければならない場合、第6図に示すようにペリクル
枠30付近でのフレアの影響が無視できなくなる。第6図
において、40は入射ビーム、50、60は各々前方散乱光お
よび後方散乱光を受光する検出器を示す。したがって、
ペリクル面検査時に検査領域を第3図におけるTの領域
で1/2ずつ検査する必要がある。その際の検査フローチ
ャートの一例が第4図である。往動時にレチクル面の1/
2の検査を行い(ステップ51)、ピント位置をペリクル
面に切換え(ステップ52)、復動時にペリクル面の1/2
を検査する(ステップ53)。O点位置においてレチクル
を180゜反転する(ステップ54)。続いて往動時にペリ
クル面残り1/2面を検査する(ステップ55)。次にピン
ト位置をレチクル面に切換え(ステップ56)、復動時に
レチクル面残り1/2面を検査し、全ての検査を終了す
る。(ステップ57)。In the first embodiment, the photodetector for detecting scattered light on the pellicle surface is arranged to receive forward scattered light with respect to an incident beam. Therefore, there is no influence of flare light from the pellicle frame at the time of inspection near the pellicle support frame. At the time of pellicle surface inspection, an entire surface inspection can be performed. However, when the light receiving system must be arranged to receive the backscattered light with respect to the incident beam as shown in FIG. 5 due to the space limitation of the device, etc., as shown in FIG. The effects of flare cannot be ignored. In FIG. 6, reference numeral 40 denotes an incident beam, and 50 and 60 denote detectors for receiving forward scattered light and back scattered light, respectively. Therefore,
At the time of pellicle surface inspection, it is necessary to inspect the inspection area by half in the area of T in FIG. FIG. 4 shows an example of the inspection flowchart at that time. 1 / of the reticle surface during forward movement
Inspection 2 is performed (Step 51), and the focus position is switched to the pellicle surface (Step 52).
Is inspected (step 53). The reticle is turned 180 degrees at the point O (step 54). Subsequently, the remaining half of the pellicle surface is inspected during the forward movement (step 55). Next, the focus position is switched to the reticle surface (step 56), and the other half of the reticle surface is inspected at the time of return, and all inspections are completed. (Step 57).
これらの実施例において、レチクル面またはペリクル
面上の検査すべき領域がペリクル支持枠の影響を受けな
い程小さい場合には、往動時にレチクル面全面を検査
し、復動時にペリクル面全面を検査して1往復で検査を
完了させてもよい。In these embodiments, if the area to be inspected on the reticle surface or pellicle surface is small enough not to be affected by the pellicle support frame, the entire reticle surface is inspected during forward movement, and the entire pellicle surface is inspected during backward movement. The inspection may be completed in one round trip.
[発明の効果] 以上説明したように、本発明においては被検査物の往
復動作において往動時および復動時ともに検査を行うこ
とにより、大きな検査時間の短縮が図られるとともに、
それぞれで各々の面に集光位置を合わせて検査を実行さ
れるので、各面に対して適切な集光状態で精度良く検出
できる。[Effects of the Invention] As described above, in the present invention, the inspection is performed both in the forward movement and the backward movement in the reciprocating operation of the inspection object, so that the inspection time can be greatly reduced,
Since the inspection is executed by adjusting the light condensing position on each surface in each case, it is possible to accurately detect each surface in an appropriate light condensing state.
第1図は、本発明の第一の実施例に係る検査フローチャ
ート、 第2図は、本発明の第一の実施例に係る装置の構成図、 第3図は、レチクル面検査時のペリクル支持枠による入
射ビームへの影響の説明図、 第4図は、本発明の第二の実施例に係る検査フローチャ
ート、 第5図は、従来装置の構成図、 第6図は、ペリクル面検査時のペリクル支持枠により発
生するフレアの説明図である。 1:レチクル、 2、2′:ペリクル、 3:レチクルステージ、 30:ペリクル支持枠、 40:入射ビーム。1 is an inspection flowchart according to a first embodiment of the present invention, FIG. 2 is a configuration diagram of an apparatus according to the first embodiment of the present invention, and FIG. 3 is a pellicle support at the time of reticle surface inspection. FIG. 4 is an explanatory diagram of the influence of a frame on an incident beam, FIG. 4 is an inspection flowchart according to a second embodiment of the present invention, FIG. 5 is a configuration diagram of a conventional apparatus, and FIG. It is explanatory drawing of the flare generated by a pellicle support frame. 1: reticle, 2, 2 ': pellicle, 3: reticle stage, 30: pellicle support frame, 40: incident beam.
───────────────────────────────────────────────────── フロントページの続き (56)参考文献 特開 昭62−219631(JP,A) 特開 昭61−162736(JP,A) 特開 平3−34306(JP,A) 特開 昭63−167209(JP,A) 特開 平1−156641(JP,A) (58)調査した分野(Int.Cl.6,DB名) G01N 21/84 - 21/90 ──────────────────────────────────────────────────続 き Continuation of the front page (56) References JP-A-62-219631 (JP, A) JP-A-61-162736 (JP, A) JP-A-3-34306 (JP, A) JP-A-63-19663 167209 (JP, A) JP-A-1-156641 (JP, A) (58) Fields investigated (Int. Cl. 6 , DB name) G01N 21/84-21/90
Claims (5)
面状態の検査装置であって、被検査物に検査用光束を照
射する光照射手段と、被検査物の面状態を検査すべく被
検査物からの出射光を検出する光検出手段と、前記検査
用光束の集光状態を変化させるための集光状態調整手段
と、前記被検査物を往復移動させる移送手段と、前記集
光状態調整手段と前記移送手段の動作を制御するための
制御手段とを具備し、該制御手段は前記移送手段による
被検査物の往動時と復動時で各々前記基板面と前記ペリ
クル膜面のうちの異なる面に集光位置を合わせてそれぞ
れ検査を行うことを特徴とする面状態検査装置。An inspection apparatus for inspecting a surface state of an inspection object having a pellicle film mounted on a substrate, wherein the light irradiation means irradiates the inspection object with a light beam for inspection, and inspects a surface state of the inspection object. Light detecting means for detecting light emitted from the object to be inspected, light condensing state adjusting means for changing the light condensing state of the inspection light beam, transfer means for reciprocating the object to be inspected, A light condition adjusting means; and a control means for controlling the operation of the transfer means, wherein the control means controls the substrate surface and the pellicle film at the time of forward and backward movements of the inspection object by the transfer means. A surface state inspection apparatus, wherein inspection is performed by adjusting light condensing positions to different ones of the surfaces.
反転させる手段を具備したことを特徴とする特許請求の
範囲第1項記載の面状態検査装置。2. A surface condition inspection apparatus according to claim 1, further comprising means for reversing the object to be inspected with respect to the direction of the reciprocating movement.
の検査精度に応じて前記移送手段の移送速度を変えるよ
うに構成したことを特徴とする特許請求の範囲第1項記
載の面状態検査装置。3. The apparatus according to claim 1, wherein said control means is configured to change a transfer speed of said transfer means in accordance with an inspection accuracy of an inspection surface of said inspection object. Surface condition inspection device.
設けたパターン露光用レチクルからなり、上下のペリク
ル膜表面及びレチクルの上下両面を被検査面とすること
を特徴とする特許請求の範囲第1項記載の面状態検査装
置。4. The object to be inspected comprises a pattern exposure reticle provided with pellicle films on both upper and lower surfaces, and upper and lower surfaces of the pellicle film and upper and lower surfaces of the reticle are inspected surfaces. 2. The surface state inspection apparatus according to claim 1, wherein:
膜を設けたパターン露光用レチクルの上下それぞれの方
向から同時に光を照射することを特徴とする特許請求の
範囲第4項記載の面状態検査装置。5. A surface condition according to claim 4, wherein said light irradiation means simultaneously irradiates light from upper and lower directions of a pattern exposure reticle provided with a pellicle film on both upper and lower surfaces. Inspection equipment.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP29526490A JP2947916B2 (en) | 1990-11-02 | 1990-11-02 | Surface condition inspection device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP29526490A JP2947916B2 (en) | 1990-11-02 | 1990-11-02 | Surface condition inspection device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH04170544A JPH04170544A (en) | 1992-06-18 |
JP2947916B2 true JP2947916B2 (en) | 1999-09-13 |
Family
ID=17818343
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JP29526490A Expired - Fee Related JP2947916B2 (en) | 1990-11-02 | 1990-11-02 | Surface condition inspection device |
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JP (1) | JP2947916B2 (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002286656A (en) * | 2001-01-22 | 2002-10-03 | Hitachi Electronics Eng Co Ltd | Substrate inspection apparatus |
-
1990
- 1990-11-02 JP JP29526490A patent/JP2947916B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
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JPH04170544A (en) | 1992-06-18 |
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