TW563215B - Mounting method and device for material to be junctioned having bumps - Google Patents
Mounting method and device for material to be junctioned having bumps Download PDFInfo
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- TW563215B TW563215B TW91113470A TW91113470A TW563215B TW 563215 B TW563215 B TW 563215B TW 91113470 A TW91113470 A TW 91113470A TW 91113470 A TW91113470 A TW 91113470A TW 563215 B TW563215 B TW 563215B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/321—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by conductive adhesives
- H05K3/323—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by conductive adhesives by applying an anisotropic conductive adhesive layer over an array of pads
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73203—Bump and layer connectors
- H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8319—Arrangement of the layer connectors prior to mounting
- H01L2224/83191—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on the semiconductor or solid-state body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01033—Arsenic [As]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01039—Yttrium [Y]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/014—Solder alloys
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/06—Polymers
- H01L2924/078—Adhesive characteristics other than chemical
- H01L2924/0781—Adhesive characteristics other than chemical being an ohmic electrical conductor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/06—Polymers
- H01L2924/078—Adhesive characteristics other than chemical
- H01L2924/0781—Adhesive characteristics other than chemical being an ohmic electrical conductor
- H01L2924/07811—Extrinsic, i.e. with electrical conductive fillers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
- H05K2201/10613—Details of electrical connections of non-printed components, e.g. special leads
- H05K2201/10621—Components characterised by their electrical contacts
- H05K2201/10674—Flip chip
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/02—Details related to mechanical or acoustic processing, e.g. drilling, punching, cutting, using ultrasound
- H05K2203/0278—Flat pressure, e.g. for connecting terminals with anisotropic conductive adhesive
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Wire Bonding (AREA)
- Electric Connection Of Electric Components To Printed Circuits (AREA)
- Adhesives Or Adhesive Processes (AREA)
Abstract
Description
563215 五、發明說明（1) 技術 :以::安:::;裝。經由含有導電…異 (二晶“基上:ί:τ具有突起部之被接合物 對至少一方且# 合為習知之安裝方法起：：：G:之相互間進行加熱接 經由含有導電粒子之異向’習知之方法是 =導電性糊)進行接合。此種方考導電性薄膜 有導電粒子之異向導電性方法之接合方法是使含 用加熱和加壓*導電粒子被央接合物之間，利 極之間，用來確保電連接，和：間或突起部與電 分固化，用來確保對外部之 j 周圍之接著劑成 習知之此種方法是例如在λ板:口也、封性。 異向導電性薄膜，或塗布里2道^上黏貼含有導電粒子之 25。個面積為5_心2起部電曰：糊之,，例如在具有 ，低加麼力（例如15ΜΡ上二之;曰進例如6〇 接合，在下一個步驟，：j:;曰片進订暫時里著藉以暫時 95MPa)進行直正壓著_以=^例^220 C) ’高麼力（例如 夾入在基板…後利” 確保其間之電連接。大起^間之導電粒子’用來 圖7 要將該電連接之狀態保持在所希望之狀態時，例如突起 部面積為50 00 “之突起部上所捕獲之粒子直徑為6 ^之 導電粒子之數目，在每一個突起部需要大約5個以^ λ m 7 第4頁 91113470.ptd 563215563215 V. Description of the invention (1) Technology ::: 安 :::; Via a conductive installation containing: ... (two-crystal "based: ί: τ at least one of the objects to be joined with a protruding part and # is a conventional mounting method: :: G: heating between each other through the conductive particles The anisotropic method is known as = conductive paste) for bonding. This method of conducting anisotropic conductive films with conductive particles has a method of bonding the conductive particles with heat and pressure. This method is used to ensure the electrical connection between the electrodes and the electrodes, and the curing of the protrusions and the electrical components is used to ensure that the adhesive around the external j is known. This method is, for example, in the λ plate: Anisotropically conductive film, or 25 pieces of conductive particles on the inside of the coating. The area is 5_heart and 2 pieces of electricity. Paste, for example, have a low applied force (such as 15MP) In the second step, for example, the 60 joint, in the next step: j :; the film advance order temporarily to temporarily press 95MPa) for direct positive pressure _ Yi = ^ Example ^ 220 C) 'High Modal Force (for example Clamped on the substrate ... to ensure the electrical connection between them. Large conductive particles are used Fig. 7 To maintain the state of the electrical connection at a desired state, for example, the number of conductive particles having a diameter of 6 ^ captured on the protrusions having an area of 50 00 "is required for each protrusion About 5 ^ λ m 7 Page 4 91113470.ptd 563215
表示在 部接合 °c之冷 每一個 由使每 則例如 電阻上 但是 突起部 求，要 亦具有 精細之 所以要 在此種 電粒子 經：異向導電性接著劑使基板 之情況時，在所連接之基板與 二二片之突起 熱循環重複進行10。。個循環後二 突起部之捕驊莫Φ1I €阻上升值（Ω )與 - 為:=，經 即使使用條件或環境條件重複變動 乂上 升很少之穩定之接合狀態。 兀了以彳又付 ，在上述方式之習知之安裝方法中，It means that the coldness of the junction ° C is caused by each piece, for example, the resistance, but the protrusions are required to have fineness. The reason why this kind of electric particles pass through the substrate: The thermal cycle of the connected substrate and the two protrusions is repeated for 10 times. . After two cycles, the catch of the protrusion is Φ1I € resistance rise value (Ω) and-is: =, even if the use conditions or environmental conditions change repeatedly, it has a stable bonding state with little rise. I have to pay for it. In the conventional installation method of the above method,
之細間距化，和隨著產生之突起:而ί別疋最近之 因應其要求變為困•。亦即，； 度之面積，但是例；； ΐ:ϋ之 板之突起部’為著細間距化， 求大，力3 0 0 0 程度之面積之突起部，和立接合。 小面積之突起部之情況時，每一個突起部之捕獲導 數難以確保5個以上。Fine-pitch, and with the emergence of the emergence: and 疋 bie 疋 recently became sleepy in response to its requirements •. That is, the area of the degree, but for example ;; ΐ: ϋ of the plate's protrusions ′ are fine-pitch, and the area of the force is about 300,000, and the protrusions are joined with the stand. In the case of a small-area protrusion, it is difficult to secure five or more capture derivatives per protrusion.
其理由如圖8所示，在真正壓著時，存在於晶片⑴和基 板102之間之接著劑成分1G3被高溫加熱，在此種狀態，於 晶片1 0 1之突起部1 〇 4和基板1 0 2之電極丨〇 5之間被施加壓 力，導電粒子1 06被夾入和捕獲在其間，但是因為接著劑 成分103被加熱到高溫因而使其黏度大幅降低，所以隨著 加壓使接著劑成分1 〇 3從突起部1 〇 4和電極；[〇 5之間流向周 圍，因此導電粒子106亦從突起部1〇4和電極1〇5之間逃 脫，其結果是在突起部104上被捕獲之導電粒子1〇6之數目 不能確保較多數。當每一個突起部之捕獲導電粒子數不能The reason for this is shown in FIG. 8. During the actual pressing, the adhesive component 1G3 existing between the wafer stack and the substrate 102 is heated at a high temperature. In this state, the protruding portion 104 of the wafer 101 and the substrate are heated. Pressure is applied between the electrodes of 102, and conductive particles 106 are sandwiched and trapped therebetween. However, because the adhesive component 103 is heated to a high temperature, its viscosity is greatly reduced. The agent component 〇3 flows from the protrusion portion 104 and the electrode; [0] flows to the surroundings, so the conductive particles 106 also escape from between the protrusion portion 104 and the electrode 105, and as a result, it is on the protrusion portion 104. The number of captured conductive particles 106 cannot be assured. When the number of conductive particles captured by each protrusion cannot be
91113470.ptd ^ 5 ^ 563215 五、發明說明（3) 確保為5個以上時，如前所述，會彦 穩定之問題。 M a產生電連接狀態變為不 種問題，可以考慮使異向導電 數：加。亦即，在利用上述之習知方法進 電，子數之關係’與異向導電性接著劑中之導電粒5 (早位· 4個/麗3)相關，成如 —^ ^^ - - - 5〇:: 積之關：：：：起部之捕獲導電粒子數對突起部面 /之特性表不。通常，異向導電性接著劑中之導電粒子 之用Γ萬個-3程度者’戶斤以在面積為大約議 ΓΛΐ突起部之情況時，即使呈現-3…寺性，亦可 起確保5個以上之捕獲導電粒子。但是，當突 ί i，ϊίί，約3000 "m2程度時，於呈現_3。之特性之 難’。盘此：董:：上f確保5個以上之捕獲導電粒子會有困 數心二. 使異向導電性接著劑中之導電粒子 之程i t個/mm3時，即使突起部面積小至大約3_ 亦可以在突起部上確保有5個以上之捕獲導 部ΪΪ之ΐ著要因應由於突起部之細間距化而造成之突起 ΓΠΙΠ:會發生短路或雜訊之新問題二即，當使 接者劑中之導電粒子數增加時，殘留在突起部 9lll3470.ptd 第6頁91113470.ptd ^ 5 ^ 563215 V. Description of the invention (3) When it is ensured that there are 5 or more, as mentioned above, the problem of stability will be in Huiyan. The electrical connection state of Ma is not a problem, and the number of anisotropic conduction can be considered: add. That is, when using the conventional method to charge electricity, the relationship between the number of children 'is related to the conductive particles 5 (early position · 4 pieces / Li 3) in the anisotropic conductive adhesive, as follows:-^ ^^-- -5〇 :: Sekisei Seki :::: The number of captured conductive particles in the starting part indicates the characteristics of the surface of the protruding part /. In general, the use of conductive particles in anisotropic conductive adhesives is 10,000 to 3 degrees. If the area is about ΓΛΐ protrusions, even if the area is -3 ..., it can ensure 5 More than one captured conductive particle. However, when suddenly ίi, ϊίί, about 3000 " m2, Yu appears _3. Difficulties of the characteristics'. This: Dong :: Make sure that more than 5 conductive particles can be trapped. 2. When the distance of the conductive particles in the anisotropic conductive adhesive is 1 / mm3, even if the area of the protrusion is as small as about 3_ It is also possible to ensure that there are more than 5 capture guides on the protrusions. The protrusions should be caused by the fine pitch of the protrusions. ΓΠΙΠ: A new problem that short circuit or noise will occur. When the number of conductive particles in the agent increases, it will remain in the protrusion 9ll3470.ptd Page 6
5632 丄〕 可以增 子數亦 電粒子 細間距 ’會產 加，隨著接著劑 增加’因為在接 之密度亦變高， 化’會產生短路 生從接合部之_ 是提供 況時， 子，不 接合。 目的安 合至少 用接著 正壓著 真正壓 法中， ，利用 習知方 放置在 時壓著 但是在 真正壓 著。 五、發明說明（4) 上之導電粒子數 到周圍之導電粒 用於電接合之導 之尺寸之變小之 别是在向頻區域 題。 f明之指@ 本發明之目的 面積被縮小之情 數以上之導電粒 達成所希望之電 用以達成上述 電性接著劑，接 間，其特徵是利 低溫，和大於真 壓著，然後進行 在此種安裝方 轉移到真正壓著 時間。亦即，在 一方之被接合物 小之壓力，在暫 驟之真正壓著， 壓著時施加高於 以轉移到真正壓 女裝方法及裝置 亦可以在突起部 會發生短路或雜 裝方法經 一方具有 劑中之導 之壓力， 著。 暫時壓著 此種方式 法中，當 另外一方 後解除暫 本發明之 著之高壓 由含有 突起部 電粒子 進行兩 後，不 可以簡 暫時壓 之被接 時壓力 安裝方 力，所 成分之流動，桃 合部周圍，未脫 所以隨著突起部^ 之問喊。另外， 圍撿拾雜訊之問、 ，即使在突起# f捕獲所希望二: 況專之問題，可以 導電粒子之異向導 之被接合物之相及 實質上不會流動支 個被接合物之暫時 需解除壓力就可^ 化接合步驟和縮翅 著時’實質上只將 合物上’只施加拫 ’轉移到下一個步 法中，因為在暫時 以不解除壓力，可 5632155632 丄] You can increase the number of electrons and fine-pitch particles, which will be added. As the adhesive increases, 'because the density of the connection will also become higher, a short circuit will occur from the junction. Not engaged. The purpose of security is at least followed by positive pressing in the real pressing method, using the conventional method to place the pressing in the real pressing but in the real pressing. V. Description of the invention (4) The number of conductive particles on the surrounding conductive particles is smaller than that of the conductive particles used for electrical bonding. f 明 指 @ The conductive particles of the present invention whose area has been reduced more than the number of conductive particles to achieve the desired electricity used to achieve the above-mentioned electrical adhesive, the connection is characterized by favorable low temperature, and greater than true pressure, and then in the This type of installer shifts to true pressing time. That is, the small pressure on one side of the object to be joined is temporarily pressed, and the method and device applied when pressing is higher than the pressure to transfer to the actual pressing can also cause a short circuit or miscellaneous method in the protruding portion. One side has the pressure of the lead in the agent. In the method of temporarily pressing this method, when the other party releases the high voltage of the present invention, the electric particles containing the protrusions are performed two times, and it is not possible to press the square force when the pressure is temporarily connected, and the flow of the components, Around the peach joint, did not take off so shouted as the protrusion ^ asked. In addition, the problem of picking up noise, even in the protrusion # f capture of the desired two: the problem of the situation, the conductive particles can be guided to the phase of the bonded object and the temporary support of the bonded object will not flow. If the pressure needs to be released, the joining step and shrinking wings can be transferred to the next step.
用上述接著劑中 低於90 t之溫度 壓著之加壓力可 。該40MPa以上之 使當接著劑之溫 很高之加壓力， 。另外，暫時壓 1 m m / s 〜1 〇 m m / s 之 另外’在本發明之安裝方法中，可以採 之導電粒子實質上不會流動之低溫，採用 (例如60t程度之溫度）。另外，高於真正 以採用突起部壓力之4〇MPa以上之加壓力< 加壓力高於習知之暫時壓著之加壓力，即 度變低’接著劑之黏度變高時，亦可以以 =f電粒子不流動之方式夾入到突起部上 著犄之被接合物之移動速度最好設定在〇 範圍内。 另外，在本發明之安裝方 高於真正壓著之高壓力，所 著時施加之壓力減壓的進行 作用維持暫時壓著時所施加 力，在此等情況時，實質上 進行真正壓著。在後者之情 之接著劑成分使用收縮性接 質上不加壓。該接著劑可以 收縮之熱硬化性接著劑，或 化和收縮之紫外線硬化型接 本發明之安裝裝置經由含 劑’接合至少一方具有突起 徵是具有暫時壓著裝置，利 不會流動之低溫，和突起部 進行兩個被接合物之暫時壓 法中’因為在暫時壓著時施加 在真正壓著時，可以將暫時壓 加壓’或是利用接著劑之硬化 之壓力中之真正壓著所必要之 不而要從外部施加壓力就可以 ，，例如該異向導電性接著劑 著劑’則在真正壓著時可以實 使用例如經由加熱進行硬化^ 使用經由紫外線之照射進 著劑。 f導電粒子之異向導電性接著 部之被接合物之相互間，其特 用接著劑中之導電粒子實質上 壓力之40MPa以上之加壓力， 著。 563215 五 發明說明（6) 在該安裝裝置中，作 者，實質上之構成可以：f %壓著後進行真正壓著裝置 置在力;壓裝置，只具有升溫裝 步驟，利用；著：：^匕裝方法及裝置，’在暫時壓著 ::，在低溫粒：實；上不會流動之低溫， 1子，難以從突起部上逃脫所M存在於突起部上之導電 怨被加壓。另外，，古_ α脫，以在突起部上捕獲多量之狀 高加壓力，所以殘5二ff力因為成為高於真正壓著之 夾入到接合部，莽以產=ί j上之導電粒子可以被確實的 導電性接著劑中‘導電粒』f之電接合。®此，即使異向 在與習知方法同等之導電：J :特別增加時…亦即，即使 化而使突起 /、子數而且隨著突起部之細間距 定個數以上（例、/ 蚪，亦可以在各個突起部上捕獲指 在使用小面積？ 上捕獲所希望之：數::：：日”亦可以很容易在突起部 或雜訊等之者劑中之導電粒子數，所以不會發生短路 另外，ΐ:;:可以石;實的達成所希望之電接合。 壓著，所以；以：ί:日:3耆後之壓力就可以轉移到真正 纽ωΐϋΐτ步驟全體之簡化和時間之縮短。 下面將參照圖式用來說明本發明之最# A k 圖I表示本發明之一實施態樣之月安之取佳二， 所示之實例是作A #接入4 衣凌置1。在圖1中， 為被接合物者，-方為晶片2另外一方為 \\326\2d-\91-09\91113470.pidIt is acceptable to use a pressure below 90 t in the above adhesive for pressing. The pressure of 40 MPa or more makes the temperature of the adhesive very high. In addition, temporarily pressing 1 m m / s to 10 m m / s. In addition, in the installation method of the present invention, a low temperature at which the conductive particles do not substantially flow can be adopted (for example, a temperature of about 60t). In addition, if the pressure is higher than the actual pressure of 40 MPa using the protrusion pressure < the pressure is higher than the conventional temporary pressure, that is, the degree becomes lower, when the viscosity of the adhesive becomes higher, it can also be expressed as = It is preferable that the moving speed of the object to be sandwiched between the protrusions sandwiched on the protrusions so that the electric particles do not flow is set within a range of 0. In addition, in the installation side of the present invention, the pressure applied is higher than the actual pressure, and the pressure applied at the time of the pressure reduction is maintained to maintain the force applied during the temporary pressure. In these cases, the actual pressure is substantially performed. In the latter case, the adhesive component is not pressurized using a shrinkable joint. The adhesive can be a shrinkable thermosetting adhesive, or a UV-curable adhesive that can shrink and shrink. The mounting device of the present invention has at least one of the joints through the agent's. In the temporary pressing method of the two objects to be joined with the protrusions, 'because the temporary pressing can be applied when the actual pressing is applied during the temporary pressing', or the actual pressing of the hardening pressure of the adhesive is used. It is not necessary to apply pressure from the outside. For example, the anisotropic conductive adhesive agent 'can be used for actual hardening, for example, hardened by heating. ^ Using ultraviolet rays into the agent. f. The anisotropic conductive bonding of conductive particles. The specific pressure of the conductive particles in the adhesive is 40 MPa or more. 563215 Fifth invention description (6) In this installation device, the author, in essence, can be constituted by: f% pressing the actual pressing device to place the force; the pressing device only has the step of increasing the temperature, using: ^: The dagger mounting method and device, 'is temporarily pressed ::, at low temperature grains: solid; low temperature that does not flow, 1 child, it is difficult to escape from the protrusion. The conductive complaint existing on the protrusion is pressurized. In addition, the ancient _α releases high pressure in order to capture a large amount on the protrusion, so the residual force of 52 ff is higher than the actual pressure, and it is sandwiched into the joint. The particles can be electrically bonded by the 'conductive particles' f in the conductive adhesive. ® Here, even if the anisotropy has the same electrical conductivity as the conventional method: J: When it is particularly increased ... That is, even if the number of protrusions is increased, the number of protrusions and the number of protrusions are determined by the number of protrusions. It is also possible to capture the finger on each protruding part using a small area? Capture the desired number ::::: day ". It is also easy to count the number of conductive particles in the agent such as the protruding part or noise, so A short circuit will occur. In addition, ΐ:;: 可 石; the actual electrical connection to achieve the desired. Press, so; to: ί: day: the pressure after 3 耆 can be transferred to the real simplification and time of the whole step The following will be used to explain the best # A k of the present invention with reference to the drawings. FIG. I shows one of the best aspects of the present invention, which is the second best choice. The example shown is A #Access 4 Yi Ling Set 1 In Figure 1, are the person to be joined, the-side is the wafer 2 and the other side is \\ 326 \ 2d- \ 91-09 \ 91113470.pid
$ 9頁 563215 五、發明說明（7) 基板3之情況。在晶片2上設有多個 示2個^起部4)，在基板3設有對應之概 片2和基板3經由異向導電性接著劑接合，#向專阳 1中：J之導電粒子被捕獲和夾入在突起部4和襯塾5:者 間’用來確保其間之電連接。 此處之晶片是指例如J C卡片，半 面安裝零件，晶圓等，與種類或Π:;:片包=牛’表 合之側之全部者。突起部是指 接板接 等之與被設在基板之襯墊接合之全部者；：二:,： 關玻=板、薄膜基板、晶片、晶 指例如具有電配線之電⑮，未全：者。襯塾是 與被設在晶片之突起部接合配線之虛擬電極等， 在本實施形態中，設有用以保持美 :持晶片2之工具7。載物台6構建/為在X = ):/或旋轉方向(Θ方向)可以進行 方，向二千方 建成J在Z方向(上下方向)㈣向和旋轉 方、7構 仃位置調整。在本實施態樣中，該工且了 方向）進 置’和可以利用突起部壓力以4〇MPa以上之芦：加熱裝 基板3加壓。另外，檢測上下之被 ，力使晶片2對 根據該偏差量，在所希望之位置。 立置偏差量， ^能夠達成此種方式’所以在載物二工内整二 有可進退之辨識裝置8作讀取 八7之間，汉 -被接合物側之辨識標示。該辨識裝上下γ 91113470·$ 9 pages 563215 V. Description of the invention (7) Case of substrate 3. The wafer 2 is provided with a plurality of 2 raised portions 4), and the substrate 3 is provided with a corresponding chip 2 and the substrate 3 are bonded via an anisotropic conductive adhesive. # 向 专 阳 1 In: J's conductive particles It is captured and sandwiched between the protrusion 4 and the liner 5: between them to ensure the electrical connection therebetween. Here, the wafer refers to, for example, J C cards, half-mounted parts, wafers, etc., and the type or Π:;: chip package = cow's side. The protruding part refers to all that are connected to the board and the pad provided on the substrate; two:,: glass = board, thin film substrate, wafer, crystal finger, for example, with electrical wiring, not all: By. The lining is a virtual electrode or the like that is bonded to a protrusion provided on a wafer. In this embodiment, a tool 7 for holding a beautiful wafer 2 is provided. The stage 6 can be constructed in the X =): / or rotation direction (Θ direction). It can be squared to 2,000 squares. J is adjusted in the Z direction (up and down direction) and the rotation direction. In this embodiment, the process is performed in the direction) and the reed can be heated at a pressure of 40 MPa or more by using the protrusion pressure: the heating substrate 3 is pressurized. In addition, the upper and lower quilts are detected, and the wafer 2 is forced to be at a desired position based on the amount of deviation. The amount of standing deviation can be achieved in this way ’so there is a recognizable device 8 that can be moved forward and backward in the second load carrier. The identification equipment up and down γ 91113470 ·
Ptd 第10頁 563215Ptd Page 10 563215
91113470.ptd 第11頁 563215 五、發明說明（9) >^匕 〇 卜 X Jj* c»n > ,之圖8所示之習知技術之暫時壓著時之狀態是在 y U C 〜1 1 〇 Qp 令、& 汰 狀能。 L之近傍之溫度，以極低之加壓力進行壓著時之 教i q μ在、本發明中，例如在70 °C程度之溫度，亦即以導電 兮：厂'以流動（實質上為不流動）之低温進行加壓，而且 吞亥加壓力夕#上& Λ 七（古 & ϋ使用存習知之暫時壓著時之加壓力高之壓 於^於立真正壓著之加壓力）。因此，如圖5所示，以存在 微$ ^ ί 4和襯墊5間之導電粒子9極難逃脫之狀態加壓， =在二Γ之導電粒子9殘留在突起部4上，直接被捕獲和夾 入在犬起部4和襯墊5之間。 人 動：面且詳細的觀察該接合時之導電粒子之 種，亦即':!!導電性接著劑之例如異向導電性薄膜有2 散在2劑冗之=電性r，料電粒子均-的擴 子只集雙層型之異向性導電性薄膜，導電粒 真正壓著ί::，的擴散。在習知之以高溫高壓接合之 為流二^二在，層型^向導電性薄膜之情況，因 外，在二所以可捕獲之粒子之數目減少。另 -之粒子擴散狀態產生不規則性 2由於机動’在均 層中產生氣體因4 Γ 和由於高溫下之接著劑 造成可捕獲之粒子數之減少。但是咸二:粒子數， 在暫時壓著以低溫高壓壓入時 明之方式’ 氣泡，所以在初期均—擴散之粒子數==會產生 解決粒子數減少之問題。 了以直接捕獲，可以 另外，在暫時壓著時吏被接 亏便很接σ物緩慢的移動，但是經91113470.ptd Page 11 563215 V. Description of the invention (9) > ^ 匕 〇 卜 X Jj * c »n > The state of the conventional technology shown in FIG. 8 when temporarily pressed is y UC ~ 1 1 〇Qp order, & In the present invention, for example, at a temperature of about 70 ° C, that is, to conduct electricity: the factory 'uses the flow (essentially no (Flowing) at low temperature, and swallowing the helium pressure &# 上 & Λ 七 (Ancient & ϋ using the temporary pressure of the existing compressive pressure is higher than the pressure of ^ Yu Li real pressing) . Therefore, as shown in FIG. 5, the pressure is in a state where the conductive particles 9 between the micro $ 4 and the pad 5 are extremely difficult to escape, = the conductive particles 9 of two Γ remain on the protrusion 4 and are directly captured. And sandwiched between the dog lifting portion 4 and the pad 5. Human movement: The surface and detailed observation of the kind of conductive particles at the time of bonding, that is, ': !! conductive adhesive, such as anisotropic conductive film has 2 scattered 2 agents redundant = electrical r, both electrical and electrical particles The expander only collects double-layer anisotropic conductive films, and the conductive particles are really pressed against the spread of ί ::. In the conventional case where a high-temperature and high-pressure bonding is used, a two-layer, two-layer, and conductive thin film is used, and in addition, the number of particles that can be captured is reduced. In addition-the irregularity of the particle diffusion state 2 due to the maneuvering 'generates gas in the homogeneous layer due to 4 Γ and the decrease in the number of particles that can be captured due to the adhesive at high temperature. But the salty number two: the number of particles is temporarily pressed at low temperature and high pressure, and the bubble is clear, so in the initial period, the number of particles that are diffused == will solve the problem of reducing the number of particles. In order to capture directly, you can also, in the case of temporary pressure, the official will be moved slowly, but the
91113470.ptd 第12頁 563215 五、發明說明（10) 由以〇.lmm/s以上之速度移動，可以在粒子移動前魔入。 特別是在雙層型之異向導電性薄膜之情況時，當被接合物 之移動速度太低時，該被接合物之溫度會傳達到下層部 伤，造成粒子之流動。另外，由於氣泡之發生，會產生粒 子被推開之問題。因此，使暫時壓著時之被接合物之移動 速度成為指定速度以上，在產生流動或發生氣泡之前壓 入’可以使粒子不會逃脫的進行捕獲。但是，當被接合物 之移動速度太高時，會衝擊到下層部份，所以最佳速度會91113470.ptd Page 12 563215 V. Description of the invention (10) By moving at a speed of 0.1mm / s or more, it can be magically inserted before the particles move. Especially in the case of a two-layer type anisotropic conductive film, when the moving speed of the object to be joined is too low, the temperature of the object to be joined will be transmitted to the lower part and the particles will flow. In addition, due to the occurrence of air bubbles, there is a problem that particles are pushed away. Therefore, by setting the moving speed of the bonded object to be higher than a predetermined speed during the temporary pressing, the particles are captured without being escaped by being pushed in before the flow or the generation of air bubbles. However, when the moving speed of the joined object is too high, it will impact the lower part, so the optimal speed will be
(I 有一定之範圍。該速度範圍最好為〇· lmm/s〜1〇mm/s之範 圍。 依照上述方式之條件，例如丨個突起部4之面積即使小至 3000 /zm2之程度，異向導電性接著劑1〇中之導電粒子9之 數目與習知技術同等的成為1 〇〇萬個/mm3時，亦可以充分 的捕獲5個以上之導電粒子9，可以確保其間之良好之電連 接。另外，因為不需要增加異向導電性接著劑丨〇中之 粒子9之數目，所以不會有發生短路或雜訊之問題。 圖6表示依照條件之不同具有不規則性 著劑，之導電粒子幻。。萬個/mm3之情況時，上導述電丄生； 時壓者日守之加壓力和在面積3〇〇〇 " m2之 導電粒子數之關係，，以_3 上二4上捕丨之 獲5個以上之導電粒子9。 …生看時，亦可以捕 在上述方式之暫時壓著後，例如進行， 正壓著。由於該升溫，使異向導電性接著=10之接=成 分之黏度暫時下降’成為容易流動，值J時== 第13頁 563215 五、發明說明（11) 4上捕獲所希望之數目之導電粒子， 合狀態之方式，利用更進一牛確保所希差之電接 另外，在習知使ϊίΓ巧其Γ硬化。 能’但是在本發明中’因為利用獲功 態已捕獲導電粒子，所以在暫=者以所希望之狀 塵力直接轉移到真正壓著。但是，當需要解除 正壓著高之壓力時，隨著韓 π、者鉍加比真 至指定之壓力。者轉移到真正麼著’使加麼力減弱 暫ί ΐ著ΐ :ί ί正壓著時，$需要積極的施加壓力，在使 需要之加壓力。；留之形態，維持所 使用收縮性接著劑，在導電性接著劑之接著劑成分 硬化和收缩者二接著劑成分使用經由加熱可以 者因=種用；：r紫外線可以硬化和收縮 具有加！裝置，Ji有3著裝置可以構建成實質上未 .^ L /、具有升溫裝置或紫外線照射裝置。 I、、、it種方式之本發明之安方法及 於細間距化而传用接—而 τ ρ丨便由 起邱卜姑從丄用J面積之大起部時，亦可以很容易在突 g ^於所希望之個數之導電粒子，可以不需要辩 =導電性接著劑中之導電粒子之數目，所以不；；： 或雜訊等之問^，可以確實的達成所希望之電接：。 5，卜：不需要解除暫時壓著後之壓力就可以轉移到真正壓 吝f μ X可以使安裝步驟全體簡化，和可以使時間縮短。 羞系上之利用可能十生(I has a certain range. The speed range is preferably in the range of 0.1 mm / s to 10 mm / s. According to the conditions of the above method, for example, the area of the protrusions 4 is as small as 3000 / zm2, When the number of the conductive particles 9 in the anisotropic conductive adhesive agent 10 is equal to the conventional technology, when the number becomes 10 million pieces / mm3, more than 5 conductive particles 9 can be sufficiently captured, which can ensure a good time therebetween. Electrical connection. In addition, since there is no need to increase the number of particles 9 in the anisotropic conductive adhesive, there is no problem of short circuit or noise. Figure 6 shows that the agent has irregularity depending on the conditions. In the case of 10,000 conductive particles / mm3, the above description is based on the electric generation; the relationship between the pressure of the hourly pressure and the number of conductive particles in the area of 3,000 & m2, with _3 above Two or more of the conductive particles 9 were captured on the second 4.… When you look at it, you can also capture it after the temporary pressing in the above manner, for example, positive pressing. Due to this heating, the anisotropic conductivity continues to = Connection of 10 = temporary decrease in viscosity of the ingredients becomes easy to flow, When the value of J == page 13 563215 V. Description of the invention (11) 4 Capture the desired number of conductive particles in a state-by-state manner, using a further step to ensure the desired electrical connection. It happens that Γ hardens. It can 'but in the present invention' because conductive particles have been captured using the work-captured state, so the current person can directly transfer to true pressing with the desired dust force. However, when it is necessary to release the positive pressing When the pressure is high, with Han π, or bismuth Gabi is true to the specified pressure. The person moves to the real thing 'makes the Jiale force weaken temporarily ΐ 着 ΐ: ί When positive pressure is applied, $ needs to be actively applied The pressure is to increase the pressure as needed. The remaining form maintains the shrinkable adhesive used, and the adhesive component of the conductive adhesive is hardened and shrunk. The use of the adhesive component can be caused by heating; r Ultraviolet can be hardened and shrunk with a plus! device, Ji has 3 devices can be constructed to be substantially ^ L /, with a heating device or ultraviolet irradiation device. I ,,, and it's safety method of the present invention and methods Fine-pitch — And τ ρ 丨 from Qiu Bugu from the use of the large area of the J area, can also easily g ^ to the desired number of conductive particles, you do not need to argue = conductive adhesive The number of conductive particles, so not ;;: or noise, etc., you can achieve the desired electrical connection: 5. Bu: You can transfer to the real pressure without releasing the pressure after temporary pressing. f μ X can simplify the whole installation process and shorten the time.
563215 五、發明說明（12) 本發明之安裝方法及裝置可以適用在經由含有導電粒子 之異向導電性接著劑用來接合被接合物之間之安裝。特別 是本發明對於突起部被細間距化之情況，和使用小面積之 突起部之情況非常有效。另外，本發明對於安裝步驟全體 之簡化和時間之縮短亦非常有用。 元件編號之說明 1 安 裝 裝 置 2 作 為 一 方 之 被 接 合 物 之 晶 片 3 作 為 另 外 一 方 之 被 接 合 物 之 基 板 4 突 起 部 5 襯 墊 6 載 物 台 7 工 具 8 辨 識 裝 置 9 導 電 粒 子 10 異 向 導 電 性 接 著 劑 10a 作 為 異 向 導 電 性 接 著 劑 之 異 向 導 電 性 薄膜 10b 作 為 異 向 導 電 性 接 著 劑 之 異 向 導 電 性 糊563215 V. Description of the invention (12) The installation method and device of the present invention can be applied to the installation of joining objects to be joined via an anisotropic conductive adhesive containing conductive particles. In particular, the present invention is very effective in the case where the protrusions are fine-pitched, and in the case where protrusions having a small area are used. In addition, the present invention is also very useful for simplifying the overall installation process and shortening the time. Description of the component number 1 Mounting device 2 Wafer as one of the bonded objects 3 Substrate as the other bonded object 4 Protrusions 5 Pads 6 Stage 7 Tool 8 Identification device 9 Conductive particles 10 Anisotropic conductivity Agent 10a Anisotropic conductive film as an anisotropic conductive adhesive 10b Anisotropic conductive paste as an anisotropic conductive adhesive
91113470.ptd 第15頁 563215 圖式簡單說明 圖1是使用在本發明之一實施態樣之安裝裝 施，所使用之安裝裝置之概略構造圖。 圖2是概略剖面圖，用來表示在晶片上施加 接著劑（異向導電性薄膜）後之狀態之一實例< 圖3是概略剖面圖，用來表示在晶片上施加 接著劑（異向導電性糊）後之狀態之一實例。 圖4是異向導電性接著劑之溫度和黏度之關 圖5是概略圖，用來表示本發明之一實施態 法之暫時壓著時之導電粒子捕獲之方式。 圖6是本發明之安裝方法之暫時壓著時之加 部上捕獲導電粒子數之關係圖。 圖7是突起部上捕獲導電粒子數和重複循環 升值之關係圖。 圖8是概略剖面圖，用來表示習知之安裝方 著時之導電粒子捕獲之方式。 圖9是習知之安裝方法之突起部面積和突起 電粒子數之關係圖。 置方法之實 異向導電性 異向導電性 係圖。 樣之安裝方 壓力和突起 後之電阻上 法之暫時壓 部上捕獲導91113470.ptd Page 15 563215 Brief Description of Drawings Figure 1 is a schematic structural diagram of a mounting device used in one embodiment of the present invention. 2 is a schematic cross-sectional view showing an example of a state after an adhesive (anisotropic conductive film) is applied to a wafer. FIG. 3 is a schematic cross-sectional view showing an adhesive (anisotropic film) applied to a wafer. An example of the state after conductive paste). Fig. 4 is a graph showing the relationship between the temperature and viscosity of an anisotropic conductive adhesive. Fig. 5 is a schematic diagram showing a method for capturing conductive particles during temporary pressing in one embodiment of the present invention. Fig. 6 is a diagram showing the relationship between the number of conductive particles trapped on the attachment portion during the temporary pressing of the mounting method of the present invention. Fig. 7 is a graph showing the relationship between the number of captured conductive particles on the protrusions and the appreciation of repeated cycles. Fig. 8 is a schematic cross-sectional view showing a method of capturing conductive particles in a conventional mounting method. Fig. 9 is a graph showing the relationship between the area of the protruding portion and the number of protruding electric particles in the conventional mounting method. Realization of the method Anisotropic conductivity Anisotropic conductivity The installation method of the sample is the pressure after the pressure and the protrusion.
\\326\2d-\91-09\91113470.ptd 第16頁\\ 326 \ 2d- \ 91-09 \ 91113470.ptd Page 16
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| Application Number | Title | Priority Date | Filing Date |
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| TW91113470A TW563215B (en) | 2001-06-20 | 2002-06-20 | Mounting method and device for material to be junctioned having bumps |
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| Country | Link |
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| JP (1) | JP3966516B2 (en) |
| TW (1) | TW563215B (en) |
| WO (1) | WO2003001586A1 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI385676B (en) * | 2007-06-26 | 2013-02-11 | Sony Chem & Inf Device Corp | An anisotropic conductive material, a connecting structure, and a method for manufacturing the same |
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| JP5099987B2 (en) * | 2005-07-25 | 2012-12-19 | 旭化成イーマテリアルズ株式会社 | Circuit connection method and connection structure |
| JP4925405B2 (en) * | 2005-10-03 | 2012-04-25 | 旭化成イーマテリアルズ株式会社 | Method for manufacturing connection structure |
| WO2009001605A1 (en) * | 2007-06-26 | 2008-12-31 | Sony Chemical & Information Device Corporation | Anisotropic elctroconductive material, connection structure, and process for producing the connection structure |
| JP5540916B2 (en) * | 2010-06-15 | 2014-07-02 | デクセリアルズ株式会社 | Method for manufacturing connection structure |
| JP5370694B2 (en) * | 2011-03-11 | 2013-12-18 | デクセリアルズ株式会社 | Connection structure |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JPH0513120A (en) * | 1991-07-04 | 1993-01-22 | Sharp Corp | Electronic part mounting structure using anisotropic conductive tape connector and optical hardening resin |
| JP2629502B2 (en) * | 1991-11-20 | 1997-07-09 | 富士通株式会社 | Connection method of film mounted with semiconductor chip |
| JP3241943B2 (en) * | 1994-09-16 | 2001-12-25 | アルプス電気株式会社 | Circuit connection method |
| JP3438583B2 (en) * | 1998-05-08 | 2003-08-18 | 松下電器産業株式会社 | Anisotropic conductive film connection method |
| JP4311862B2 (en) * | 2000-05-29 | 2009-08-12 | 東レエンジニアリング株式会社 | Chip mounting method |
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2002
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| TWI385676B (en) * | 2007-06-26 | 2013-02-11 | Sony Chem & Inf Device Corp | An anisotropic conductive material, a connecting structure, and a method for manufacturing the same |
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| WO2003001586A1 (en) | 2003-01-03 |
| JPWO2003001586A1 (en) | 2004-10-14 |
| JP3966516B2 (en) | 2007-08-29 |
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