TW563182B - Method of forming epitaxial layer by epitaxial lateral overgrowth - Google Patents

Abstract

Firstly, a substrate is provided. Then, an epitaxial mask layer is formed on the surface of the substrate and the epitaxial mask layer is patterned to form a plurality of window area between the adjacent patterned epitaxial mask layers to expose a portion of the surface of the substrate. Subsequently, an epitaxial boron phosphide (BP) is grown by first vertical BP epitaxial growth in the window areas until the thickness of BP being greater than that of the patterned epitaxial mask layer and then lateral BP epitaxial growth on the patterned epitaxial mask layer. The epitaxial mask layer is not only able to be formed on the surface of the substrate but allow BP buffer layer lateral epitaxy formed on top of it. The epitaxial mask layer can be also formed on the surface of the BP buffer layer to allow a cladding layer lateral epitaxy formed on top of it and can be formed on the surface of the cladding layer to allow an active layer lateral epitaxy on top of it.

Description

563182 V. Description of the invention (1) Field of the invention: The present invention relates to a semiconductor light-emitting element, "hght emitting device", and particularly to a lateral epitaxial growth ELOG (epi taxi a 1 lateral overgrowth) A method for forming an epitaxial layer of a semiconductor light-emitting element. Related technical description: A light-emitting element is composed of various layers of different materials. When epitaxial (epi taxi) is used to make each layer of materials, defects will inevitably occur in the crystal structure, which in turn will emit light. The device has the following effects: 丨 · Decreases the luminous efficiency j. 2 · Decreases the electron activity rate. 3 · Increases the path of doped ion diffusion. 4 · Causes V-shaped grooves to appear in the quantum well of the active layer, and these V-shaped concaves The origin of the slot system difference row. 5. Increase the initial reverse bias current. In addition, if the crystal is incomplete and cracks or gaps appear, it is not appropriate to grow light-emitting elements above the cracks or gaps, because here The light-emitting element with a longer area will have a shorter life and low luminous efficiency. Therefore, how to make an epitaxial layer with perfect crystal? On the other hand, GaN is a very important wide bandgap semiconductor material in the current development of light-emitting devices. It can emit green light, blue light, and ultraviolet light. But because of the growth of bulk GaN, Difficulty 'so most of GaN currently grows on substrates made of sapphire GaP, InP, GaAs or SiC. Since these substrates do not match the lattice constant of GaN, direct growth on these substrates The quality of GaN is not good, so a buffer layer is cited. Between the substrate and GaN, this buffer layer is also known as the core formation layer.

Page 4 0769-8557TW: VTERA-91-006-1 ^; Felicia.ptd 563182 V. Description of the invention (2) --- (micleation layer), a buffer layer with a lattice constant close to the substrate can provide nucleation ) Position to facilitate GaN nucleation and growth / to form the same crystal structure 'to increase the crystallinity of GaN. Therefore, the quality of the buffer layer has a critical impact on the subsequent clad layer and active layer stupid crystals, and indirectly affects the properties of the light emitting device. However, substrates such as sapphire are expensive, resulting in high cost of light-emitting elements. Therefore, finding a new and cheap base is another important issue that needs to be solved urgently. In view of this, in order to solve the above problems, the main object of the present invention is to provide a method for forming an epitaxial layer of a lateral insect crystal, which can be applied to the formation of an epitaxial layer of a light-emitting element, so as to produce a perfect crystal with few defects. The epitaxial layer is used to improve the luminous efficiency and service life of the light-emitting element, and a boron phosphide buffer layer is used to enable the application of a cheap silicon substrate. SUMMARY OF THE INVENTION One of the objectives of the present invention is to provide a method for forming an epitaxial layer by lateral epitaxy, so as to reduce the occurrence of differential defect in the stupid crystal layer and form a perfect crystal structure. Another object of the present invention is to provide a method for forming an epitaxial layer by lateral epitaxy, and applying the epitaxial layer to a light emitting device can improve the light emitting efficiency and the service life of the light emitting device. A third object of the present invention is to provide a method for forming an epitaxial layer by lateral epitaxy, which uses silicon as a substrate to reduce the cost of a light emitting device.

0769-8557TWF; VTERA-91-006-TW; Felicia.ptd page 5 563182 V. Method of the invention (3), using boron phosphide as a buffer layer to reduce the lattice mismatch between the silicon substrate and the sound (Lattice mismatch), the stone is perfect, and the crystals are perfect, which reduces the density of the differential defect. Convenience layer One of the features of the present invention is to use a phosphating shed as a buffer layer between the silicon substrate and the epitaxial layer to reduce the lattice mismatch between the silicon substrate and the epitaxial layer. The mask layer grows straight. When the insect starts to grow laterally (ELOG) to form a crystal epitaxial layer, this method is used to obtain the crystal layer. First, the surface of Shi Xi substrate is provided. The window area is on the surface of the adjacent substrate. Then in the window area above the patterned pattern above the patterned patterned surface of the above-mentioned Shi Xi substrate according to the present invention, the second type of the epitaxial sign uses a pattern such as silicon dioxide to make the worm crystal layer precede the patterning. The thickness of the vertical crystal layer on both sides of the worm crystal mask curtain layer and the thickness of the patterned epitaxial mask curtain layer are above the patterned silly crystal mask curtain layer. Transverse worm crystal growth A perfect worm crystal layer with low differential row density. With a Z-zone light element, the element characteristics can be greatly improved. For the purpose of the present invention, a method for forming an epitaxial method by lateral epitaxy mainly includes: a silicon substrate. Next, an epitaxial hood curtain layer is formed thereon. Then, the epitaxial hood curtain layer is patterned to form a multi-patterned epitaxial hood curtain layer, and a part of the above stone evening is exposed. The epitaxial surface of the above-mentioned dished rotten stone Xi epitaxially, until the thickness of the thick sound mask layer of the above Lubei boron, is horizontally stiffened above the above-mentioned disk mask of the butterfly. In the spirit, the above-mentioned stupid crystal cover curtain layer can not only be formed & 'to make the above filling booth buffer layer laterally crystallize on the acoustic cover curtain layer, but also can be formed on the above boron phosphide buffer layer surface Η 0769-8557TWF; VTERA- 91-006-TW; Fel icia.ptd Page 6 563182 V. Description of the invention (4) plane for laterally epitaxializing a binding layer above it. In addition, it can also be formed on the surface of the tie layer to epitaxially laterally epitaxially form an active layer thereon. In a word, the present invention utilizes the epitaxial cover curtain layer, so that each epitaxial layer of the light-emitting element can be formed on the epitaxial cover curtain layer via the lateral epitaxial layer, and the epitaxial layer formed by the lateral epitaxial layer has perfect crystallization, which is not easy. Generates a difference. As mentioned above, the material of the above-mentioned stupid crystal cover curtain layer includes silicon dioxide (Si02), and its thickness is about 1 500 A to 1 500 00 A. As described above, the above-mentioned mask mask layer is engraved with a negative i-bit money for patterning. As mentioned above, the scaled boron lateral epitaxial crystals on both sides of the epitaxial mask curtain layer form a crack at the junction 'above the worm crystal mask curtain layer. The invention further includes: removing the boron phosphide above the patterned epitaxial hood curtain layer, and along the above-mentioned cracks, a split surface during the production of the light-emitting element can be formed naturally. Embodiment: Embodiment 1 Hereinafter, a preferred embodiment of the present invention will be described with reference to the sectional views of Figs. 1A to 1E. First, please refer to FIG. 1A to provide a silicon substrate 100. Next, on the surface of the silicon substrate 100, for example, the surface of the {100%} crystal plane, an epitaxial mask curtain layer 102 made of a material such as silicon dioxide is formed. The method for forming the epitaxial hood curtain layer ι02 is, for example, thermal oxidize S200, and the temperature is about 1000 in an oxygen-containing ambient gas. Under C, the above-mentioned Shixi substrate 100 is oxidized to form a stone oxide layer with a thickness of about 150-15000, as shown in FIG. 1B. Say

0769-8557TWF; VTERA-91-006-Bf; Felicia.ptd 563182 5. Description of the invention (5) Then 'Please refer to Figure 1C, for example, remove part of the above-mentioned dioxide with an etchant such as hydrofluoric acid (HF) For example, the epitaxial mask layer 102 of a specific area is removed at regular intervals to expose a part of the above-mentioned silicon substrate 100 surface as a window area I. A plurality of patterned epitaxial hood curtain layers 1 02a having the same area and equal intervals are obtained. The area of the window area between the adjacent patterned epitaxy masks 10 2a is about 50 X 4000 / zm. Then, please refer to Fig. 1D and Fig. 1E. First, epitaxial boron phosphide 104a is first verticalized on the surface of the dream substrate 100 in the window area I until the thickness of the boron phosphide 104a is greater than the thickness of the patterned epitaxial cover curtain layer d2a, as described in Section ID. As shown. Then, the boron phosphide i04a began to grow in the lateral direction. The boron phosphide 104a was located on the two sides of the patterned epitaxial hood curtain layer 102a. Lateral epitaxy grows to the required thickness after joining on the epitaxial hood curtain layer 102a to form a lateral epitaxial boron phosphide 10 4b and a crack 106 at the joint, as shown in Figure 1E As shown. A bowl of rotten crystals is one of the preferred embodiments of the Shixi substrate 1000. First, the reaction temperature is raised to a temperature of about 9 0 to 1 1 0. C, keep for about a few minutes. Then, the temperature of the reaction chamber is lowered to about 300. (: Up and down, then start to supply pC 丨 3 (or PH3) to the inside of the reaction chamber, and after about 3 minutes, proceed. The first team 13 supply is about 40 minutes. Then 'stop the BC13 supply first, at the same (about 3 〇〇 ° C) Keep Lu up and down for a period of time, for example: 5 minutes, and then increase the temperature of the reaction chamber to about 1 00. (: up and down. Continue to maintain pci3 (or PH3) supply during this time. Then, at a temperature of about 1,000 The second BCl3 supply was performed for about 60 minutes up and down at 0 ° C. During this period, the PC I3 (or PH3) supply was maintained. Then, the supply was stopped first (or

563182 V. Description of the invention (6) pH3) and bci3, and then the temperature is about 1000. 〇Up and down, after a period of time, for example, about 10 minutes, the formation of the BP buffer layer is completed. The temperature of the reaction chamber can be reduced to room temperature and then taken out. During the formation of the above BP buffer layer, H2 gas is continuously supplied to the interior of the reaction chamber.

The boron phosphide 104a epitaxially grown in the above-mentioned window region I has a relatively high differential density and is not suitable for making light-emitting devices. The crystal structure of boron phosphide 104b epitaxially epitaxially formed above the patterned epitaxial hood curtain layer 102a is intact and there is almost no difference in row formation. Only the joint has a crack 106. Therefore, take The boron phosphide i04b above the patterned epitaxial cover 102a above can naturally form a splitting surface during the manufacturing of the light-emitting element along the above-mentioned crack 106. In this way, the defect density of the epitaxial layer is low, and the boron phosphide material is used as the buffer layer on the surface of the Shixi substrate, which can reduce the lattice mismatch of the subsequent epitaxial layer. Element, which can improve the luminous efficiency and service life of the light-emitting element. X Embodiment 2 Hereinafter, a preferred embodiment of the present invention will be described with reference to the sectional views of FIGS. 2A to 2E. First, please refer to FIG. 2A, and provide a Shixi substrate 2000. Next, a plated boron (BP) buffer layer 202 is formed on the surface of the silicon substrate 2000, for example, the {100%} crystal plane surface, on the surface of the silicon substrate 2000. The boron phosphide 202 is one of the preferred embodiments of the silicon substrate 200. First raise the temperature of the reaction chamber to a temperature of about 9 0 to 1 1 8 0. C, keep for about a few minutes. Next, reduce the temperature of the reaction chamber to about 300 ° C, and then start to supply ^ ρπ (or PH3) to the inside of the reaction chamber. After about 3 minutes, ^^

563182 V. Description of the invention (7) BC13 is supplied for about 40 minutes. Then, first stop the supply of the team and keep it at the same (about 300 ° C) for a period of time, such as 5 minutes, and then raise the reaction room temperature to about 1000. (: Up and down. Continue to maintain the supply of pcl3 (or PH3) during the period. Then 'supply the second BC13 supply at a temperature of about 10,000 ° C for about 60 minutes. The PC13 (or PH3) supply is maintained during the period. Then, first Stop supplying PCI3 (or PH3) and BC13, and then at a temperature of about 1 00. (: up and down, after a period of time 'for example, about 10 minutes, then the formation of the BP buffer layer 002 can be completed, the temperature of the reaction chamber can be Take it out at room temperature. During the formation of the above-mentioned BP buffer layer 202, H2 gas is continuously supplied to the interior of the reaction chamber. Ί Next, referring to FIG. 2B, an appropriate chemical vapor deposition method (chemical vapor deposition; CVD) to form an epitaxial cover curtain layer 204 on the surface of the boron phosphide buffer layer 202, and the material may be silicon dioxide with a thickness of about 1500 to 15000 A. Then refer to FIG. 2C, for example, using hydrogen The fluoric acid (HF) type money engraving agent removes part of the above-mentioned silicon dioxide epitaxial mask curtain layer 204, for example, the epitaxial mask curtain layer 204 of a specific area is removed at equal intervals to expose part of the boron phosphide buffer layer 202 described above. Surface 'as the window area (wind〇w area) 11. Get the area Equal and equally spaced patterned epitaxial cover curtain layer 204a. The area of the window area between adjacent patterned insect crystal cover curtains 204a is about 50-// m X 4000 // m ° Then, please Referring to FIG. 2D and FIG. 2E, an epitaxial layer 206a and 206b is epitaxially epitaxially vertically epitaxially formed on the surface of the boron phosphide buffer layer 202 in the window region π until the above-mentioned confinement layer 206a. The thickness is larger than the thickness of the patterned stupid mask layer 204a, as shown in FIG. 2D. Next,

0769-8557TO7; VTERA-91-006-TW; Felicia.ptd Page 10 563182 V. Description of the invention (8) The above-mentioned restraint layer 206a begins to epitaxially grow laterally above the patterned epitaxial cover curtain layer 204a, located in the same pattern The tie layer 206a on both sides of the epitaxial hood curtain layer 204a is laterally bonded to the above-mentioned roof crystal hood curtain layer 204a and continues to grow to a desired thickness to form a lateral epitaxial tie layer 206b and A crack 20 08 is formed at the joint, as shown in Figure 2E. The material of the tie layer 206a '206b may be AlxInl-xGayNl-y (0 < x < l, 0 < y < l) or AlxGal-xNyPl-y (〇 < x < l, 〇 < y < i), For example, gallium nitride (GaN), indium gallium nitride (inGaN), aluminum gallium nitride (AlGaN), or gallium phosphorous nitride (GaNP), and the precursor is methyl hydrazine or ammonia (NIj3); nitrogen As an example, gallium (GaN) precursors may include monomethyl hydrazine (MMH) and trimethyl gallium (TMG), which are formed on the surface of the boron-filled buffer layer 202 by MOVPE method. It can reduce the lattice mismatch with the Shi Xi substrate 2000, and reduce the occurrence of defects. The epitaxial method using the gallium nitride confinement layers 206a, 206b as an example is as follows. First, an H2 and an n2 gas are supplied at a temperature of, for example, about 3500 ~ 500 ° C, and the supply of μMη is started. After a period of time, for example, the first TMG supply is started after 3 minutes, and the time is about 20 minutes. Then, "stop the supply of TMG, and after a period of time", for example, raise the temperature of the reaction chamber to about 800 ° C for 5 minutes. MMΗ supply was maintained during this period. Then 'supply the second TMg up and down at the same temperature (about 800. (:) for about 60 minutes. During this period, keep the supply of η. Finally, stop the supply of legs η and TMG' at the same temperature (about 8). 〇〇.c) Keep it up and down for a period of time, for example: 30 minutes. Then reduce the temperature to room temperature to complete the GaN epitaxy. GaN stupid crystals are continuously supplied with H2 and N2 gas. Η 0769-855TIW: NrrERA-91.〇 06-inv; Felicia.ptd page 11

563182 V. Description of the invention (9) Please continue to refer to FIG. 2E. The restraint layer 206a epitaxially deposited in the above-mentioned window area II has a relatively high differential density and is not suitable for making light-emitting elements. The binding structure 206b epitaxially epitaxially formed above the patterned epitaxial hood curtain layer 204a has a complete crystal structure, and almost no difference is generated. Only the joint has a crack 208. Therefore, the patterned epitaxial layer is removed. The restraint layer 206b above the mask cover layer 204a can naturally form a splitting surface during the manufacturing of the light-emitting element along the above-mentioned crack 208. In this way, the epitaxial layer has a low defect density, and the use of a boron material as the buffer layer on the surface of the silicon substrate 200 can reduce the lattice mismatch between the tie layer and the dream substrate. Element 彳 can improve the luminous efficiency and service life of light-emitting elements. Embodiment 3 Hereinafter, a preferred embodiment of the present invention will be described with reference to the sectional views of FIGS. 3A to 3E. First, referring to FIG. 3A, a silicon substrate 300 is provided. Next, a phosphorous contact (BP) buffer layer 302 is formed on the 300 surface of the silicon substrate, for example, the {100%} crystal plane surface, on the 300 surface of the silicon substrate. Then, a gallium nitride binding layer 304 is formed on the surface of the bowl buffer layer 302.

Boron stilbene 3 2 2 is crystallized in one of the preferred embodiments of the substrate 3. The reaction was first raised to degrees south to a temperature of about 900-118. c. Hold for a few minutes. Then, the temperature of the reaction chamber is lowered to about 300. (: Up and down, then start to supply pC 丨 3 (or PH3) to the inside of the reaction chamber, and after about 3 minutes, perform the first% ^ supply for about 40 minutes. Then, stop the supply first, and then the same (about 300) Keep it up and down for a period of time, such as 5 minutes, and then raise the temperature of the reaction chamber to about 1000. (: up and down. During this period, continue to maintain the supply of PCl3 (or PH3). Then,

0769-8557TW; VTERA-91-006.TW; Felicia.ptd Page 12 563182 V. Description of the invention (10) The second supply of BC13 is performed at a temperature of about 1 000 ° C for about 60 minutes. During the period, the supply of PC13 (or PH3) will be maintained. Then, the supply of PC13 (or PH3) and BC13 was stopped first, and then the temperature was about 100%. After a period of time above and below C, for example, about 10 minutes, the formation of the BP buffer layer 302 is completed, and the reaction room temperature can be reduced to room temperature and then taken out. During the formation of the BP buffer layer 302, H2 gas is continuously supplied to the interior of the reaction chamber. The tie layer 304 can be formed on the surface of the above-mentioned scaled boron buffer layer 302 by MOVPE method to reduce the lattice mismatch with the broken substrate 300 and reduce the generation of defects. Among them, one of the preferred embodiments of the 'vaporized binding layer 304 insect crystals on the broken substrate 300 is as follows. First, supply a & and a N2 gas at a temperature of, for example, about 350 to 500 ° C, and start supplying MMH. After a period of time, for example: after 3 minutes, the first TMG supply is started, the time is about 20 minutes. Then, the TMG supply is stopped, and after a period of time, for example, 5 minutes, the temperature of the reaction chamber is raised to a temperature of about 800. (: Up and down. MMH supply is maintained during the period. Then, the second TMG supply is performed at the same temperature (about 800. 0 up and down for about 60 minutes. MMH supply is maintained during the period. Finally, stop the supply of mmh and TMG, at the same The temperature (about 800.c) is kept up and down for a period of time, for example: 30 minutes. Then the temperature is reduced to room temperature to complete the GaN304 epitaxy. G a N 3 0 4 during the epitaxy, υ2 and n2 are continuously supplied. Next, referring to FIG. 38, an epitaxial mask 306 can be formed on the surface of the above-mentioned gallium nitride tie layer 304 by an appropriate chemical vapor method (chenncal vapor deP0sition; CVD), and the thickness is about 1 500 ～ 1 5000 A. π Kit sand 'receiver' eyes refer to Figure 3 C, for example, to prepare / ττ ^ \ & _ 椚 If using hydrofluoric acid (HF) type etchant

563182 V. Description of the invention (π) Remove part of the above-mentioned silicon dioxide epitaxial mask curtain layer 306, for example, remove the epitaxial mask curtain layer 306 of a specific area at equal intervals to expose part of the surface of the above-mentioned gallium nitride tie-down layer 304 ' As the window area (window area) III. A plurality of patterned epitaxial hood curtain layers 306 a with the same area and equal pitch are obtained. The area of the window area between the adjacent patterned epitaxial hood curtain layers 306a is about 50 X 4000 β m 〇 Then, please refer to FIGS. 3D and 3E, epitaxial-active layers 308a, 308b. Vertically epitaxial the active layer 308a on the surface of the gallium nitride confinement layer 304 in the window region in until the thickness of the active layer 308a is greater than the thickness of the patterned epitaxial mask curtain layer 306a, as shown in FIG. 3D. As shown. Next, the above-mentioned active layer 308a began to grow laterally on the patterned epitaxial mask layer 306a, and the active layers 308a on both sides of the same patterned epitaxial mask layer 306a were laterally epitaxially grown on the epitaxial mask. After being joined above the curtain layer 306a, it continues to grow to a desired thickness to form a lateral epitaxial active layer 308b and a crack 31 is formed at the joint, as shown in FIG. 3E. Please continue to refer to FIG. 3E. The active layer 308a epitaxially formed in the above-mentioned window region 111 has a relatively high differential density and is not suitable for making light-emitting elements. However, the crystal structure of the active layer 3 08b, which is epitaxially formed above the patterned epitaxial hood curtain layer 3 06a, is complete, and there is almost no difference in row formation. Only the joint has a crack 310. Therefore, the above pattern is removed. The tie layer 308b above the epitaxial mask curtain layer 30 6 & can naturally form a splitting surface during the manufacturing of the light-emitting element along the above-mentioned crack 310. In addition, the defect density of the epitaxial layer is low, and the boron phosphide material is used as the buffer layer on the 300 surface of the silicon substrate, which can reduce the lattice mismatch between the tie layer and the silicon substrate. Component

0769-8557IW ’VTERA-91..TW; Felicia.ptd Page 14 563182 V. Description of the invention (12) Luminous efficiency and service life of high light-emitting elements. Although the present invention is disclosed as above in the preferred embodiment, it is not intended to limit the scope of 'any person skilled in the art' without departing from the spirit and scope of the present invention, and can be used for various modifications and retouching. The scope of guarantee shall be determined by the scope of the attached patent application. Invention

563182

In order to make the following specific examples of the present invention better, the above-mentioned objects, features, and advantages can be more clearly understood. &Amp; Examples' and the accompanying drawings are described in detail as follows: 浐 向 # 1 1A f 至Figure 1E is a sectional view of the Xiang Lei-ri manufacturing process according to the present invention. : 2A to 2E are cross-sectional views of the k-direction worm crystal manufacturing process according to the present invention. Another preferred embodiment of another preferred embodiment FIGS. 3A to 3E are cross-sectional views showing the lateral epitaxial process. Explanation of symbols: Shows another preferred embodiment according to the present invention

100, 200, 300 ~ silicon substrate; 102, 204, 306 ~ epitaxial cover curtain layer; S20 0 ~ thermal oxidation method; 10 2a, 2 04a, 306a ~ patterned epitaxial cover curtain layer; 104a ~ vertical epitaxial phosphor Boronide; 104b ~ horizontal stupid crystal dish shed; 106, 208, 310 ~ crack; 202, 302 ~ boron phosphide buffer layer; 206a ~ vertical epitaxial tie layer; 206b ~ lateral epitaxial tie layer; 3 0 4 ~ GaN restraint layer; 308a ~ vertical worm crystal active layer; 308b ~ lateral epitaxial active layer.

0769-8557TWF; VTERA-91-006-TlV: Felicia.ptd Page 16

Claims (1)

563182 VI. Scope of patent application 'a "-1 · A method for forming an epitaxial layer by lateral epitaxy, including: providing a silicon substrate; forming an epitaxial cover curtain layer on the surface of the silicon substrate; patterning the epitaxial layer The mask layer is formed to form a plurality of window regions between adjacent patterned dummy mask layers, exposing part of the surface of the above silicon substrate; once the dummy crystals are filled with boron, the boron phosphide is first epitaxially verticalized in the above window regions. On the surface of the Shi Xi substrate, until the thickness of the boron phosphide is greater than the thickness of the patterned stupid crystal mask layer, the boron phosphide is epitaxially laterally epitaxially over the patterned stupid crystal mask layer. 2. The method of forming an epitaxial layer by lateral epitaxy as described in item 丨 of the patent application scope, wherein the material of the epitaxial cover curtain layer includes silicon dioxide (Si〇2) 〇3. As described in item 1 of the patent application scope The described method of forming an epitaxial layer by lateral epitaxy, wherein the thickness of the epitaxial cover curtain layer is about 1500A to 15000 A. The method of forming an epitaxial layer by lateral epitaxy as described in item 丨 of the patent application scope. Among them, the aforementioned boron phosphide precursors include PC 13 and 8013 or PH3 and BC13. 5 · The method of forming an epitaxial layer by lateral epitaxy as described in item 1 of the scope of patent application, wherein H2 is used as a carrier gas during the epitaxial boron phosphide described above. 6 · As described in item 1 of the scope of patent application A method for forming a stupid layer by laterally stupid crystals, wherein the epitaxial mask layer is patterned by etching with a hydrofluoric acid. 0769-8557TWF: VTERA-91-006-TW; Felicia.ptd Page 17 563182 6. Application for Patent Scope 7 • Method for forming epitaxial layer by lateral epitaxy as described in item 1 of the scope of patent application ' The lateral epitaxy of boron phosphide on both sides of the crystal mask curtain layer is joined above the insect crystal mask curtain layer, and a crack is formed at the joint. 8. The method for forming an epitaxial layer by lateral epitaxy as described in item 7 of the scope of the patent application, further comprising: removing the scaled boron above the patterned epitaxial cover curtain layer to naturally form a light-emitting element along the above-mentioned crack. Splitting surface during fabrication 〇 A method for forming an epitaxial layer by lateral epitaxy, including: providing a silicon substrate; forming a boron phosphide (BP) buffer layer on the surface of the silicon substrate; forming a stupid crystal mask Layer on the surface of the above-mentioned filled buffer layer; patterning the epitaxial cover curtain layer to form a plurality of window regions between adjacent patterned epitaxial cover curtain layers, exposing part of the surface of the boron phosphide buffer layer; The restraint layer is first epitaxially vertical-bounded on the filled side surface of the window region until the thickness of the restraint layer is greater than the thickness of the patterned stupid mask layer, and then the restraint layer is epitaxially laterally patterned on the patterned Stupid crystal mask above the curtain layer. I 0 · The method for forming an epitaxial layer by lateral epitaxy as described in item 9 of the scope of the patent application ', wherein the material of the above-mentioned stupid crystal cover curtain layer includes sulphur dioxide (Si 〇II). The method of forming an epitaxial layer by the lateral epitaxy described above, wherein the thickness of the epitaxial mask curtain layer is about 1500a ~ 15000 A 〇12. The lateral epitaxial formation of the epitaxial layer as described in item 9 of the scope of patent application 0769-8557TWF; \ ΠΈΗΑ-91-006-Τΐν; Felicia.ptd page 18 563182 6. Method for applying for patents' wherein the above boron phosphide is formed using a halide vapor phase epitaxy. 1 3 · The method for forming an epitaxial layer by lateral epitaxy as described in item 丨 2 of the scope of patent application, wherein the aforementioned boron phosphide precursors include epitaxial phosphorus (PC13) and boron vapor (BCi3) or hydrogenation. Phosphorus (ph3) and vaporized boron (BC13). 14. The method for forming an epitaxial layer by lateral epitaxy as described in item 2 of the scope of the patent application, in which the above-mentioned boron phosphide is passed through as a carrier gas. 15. The method for forming an epitaxial layer by lateral epitaxy as described in item 9 of the scope of the patent application, wherein the above binding layer is Αΐχΐηΐ-xGayNl-y (0 < x < l, 0 < y < l: ^ AlxGal-xNyPl -y (〇 < x < l, 0 < y < l). 1 6 · The method for forming an epitaxial layer by lateral epitaxy as described in item 5 of the patent application 'wherein the above-mentioned binding layer includes gallium nitride ( GaN), indium gallium nitride (InGaN), aluminum gallium nitride (AlGaN), or gallium phosphorous nitride (GaNP). 1 7 · Method for forming an epitaxial layer by lateral epitaxy as described in item 16 of the scope of patent application Wherein the above-mentioned epitaxial precursor of gallium nitride includes monomethyl hydrazine (MMH) and trimethyl gallium (trimethyl ga11ium; TMG) 〇 1 8 · Horizontal epitaxy as described in item 丨 6 of the scope of patent application Method for forming an epitaxial layer by crystals' wherein the above epitaxial GaN is vertically epitaxially performed at a temperature of about 3500 to 500 ° C. 1 9 · Horizontal epitaxial as described in item 16 of the scope of patent application The method for forming an epitaxial layer, wherein the above-mentioned gallium nitride is epitaxially performed at a temperature of about 7800 ~ 850 ° C. 0769-8557TWF: ΥΪΈΜ-9 \ Ό06 ~ ΤΗ; Felicia.ptd page 19 563182 6. Application scope of patent 20 · Method for forming epitaxial layer by lateral epitaxy as described in item 9 of the scope of patent application, wherein the above epitaxy The mask layer is patterned by etching with a hydrofluoric acid. 2 1 · The method for forming an epitaxial layer by lateral epitaxy as described in item 9 of the scope of the patent application, wherein the lateral epitaxial layers on the two sides of the epitaxial cover curtain layer are bonded and bonded over the epitaxial cover curtain layer. A crack formed everywhere. 2 2 · The method for forming an epitaxial layer by lateral epitaxy as described in item 2 丨 of the scope of patent application, which further includes ·· removing the binding layer above the patterned epitaxial cover curtain layer, which can be formed naturally along the above cracks Split surface 0 23 · —a method for forming an epitaxial layer by lateral epitaxy, including: & supplying a broken substrate; forming a boron phosphide (BP) buffer layer on the surface of the silicon substrate; forming a A gallium nitride (GaN) confinement layer is formed on the surface of the boron-filled buffer layer; an epitaxial cover layer is formed on the surface of the gallium nitride confinement layer; the stupid cover layer is patterned to form a plurality of window regions adjacent to each other Part of the surface of the patterned silt mask is exposed part of the surface of the gallium nitride confinement layer. An epitaxial active layer is firstly epitaxially verticalized to the active layer, and the surface of the gallium nitride confinement layer in the view area to the active layer. If the thickness is greater than the thickness of the two patterned stupid mask layers, the above active ^ f patterned epitaxial mask layer is epitaxially laterally epitaxial. The method described in 24. The lateral epitaxial layer as described in item 23 of the scope of patent application, wherein the material of the epitaxial cover curtain layer includes silicon dioxide. 563182 6. Scope of Patent Application (Si02). 25. The method for forming an epitaxial layer by lateral epitaxy as described in item 23 of the scope of patent application, wherein the thickness of the epitaxial cover curtain layer is about 1500A to 15000 k. 26. The method for forming an epitaxial layer by lateral epitaxy as described in item 23 of the scope of patent application, wherein the boron phosphide buffer layer is formed by a halide vapor phase epitaxy. 27. The method for forming an epitaxial layer by lateral epitaxy as described in item 26 of the scope of the patent application, wherein the precursors of the boron phosphide buffer layer of epitaxy include vaporized phosphorus (PC13) and boronized vapor (BC13) or hydrogenation Phosphorus (PH3) and boron gaseous (BC13). 28. The method for forming an epitaxial layer by lateral epitaxy as described in item 26 of the scope of patent application, wherein H2 is passed as a carrier gas during the epitaxial boron phosphide buffer layer described above. 29. The method for forming an epitaxial layer by lateral epitaxy as described in item 23 of the scope of patent application, wherein the gallium nitride confinement layer is formed by a metal organic vapor phase epitaxy (MOVPE). 30. The method for forming an epitaxial layer by lateral epitaxy as described in item 29 of the scope of patent application, wherein the precursors of the above-mentioned gallium nitride binding layer include monomethyl hydrazine (MMH) and trimethyl Trigallium (TMG) ° 3 1 · A method of forming an epitaxial layer by lateral epitaxy as described in item 23 of the patent application scope, wherein the active layer includes InyGaN, 0 < y < l. 3 2 · Epitaxial formation of lateral epitaxy as described in item 31 of the scope of patent application 0769-8557TWF; VTHRA-91-006-T1V: Felicia.ptd page 21 563182 6. Method for applying for a patent scope layer, in which the precursor of the above-mentioned active layer of stupid crystals includes trimethy aluminum (TMA1), Trimethy indium (TMIn), trimethyl gallium (TMG), and NH3. 33. The method for forming an epitaxial layer by lateral epitaxy as described in item 23 of the scope of the patent application, wherein the epitaxial mask curtain layer is patterned by etching with a hydrofluoric acid. 34. The method for forming an epitaxial layer by lateral epitaxy as described in item 23 of the scope of patent application, wherein the active layers on both sides of the epitaxial cover curtain layer are laterally epitaxially joined above the epitaxial cover curtain layer, and the joint is formed. A crack is formed. 35. The method for forming a remote crystal layer by lateral epitaxy as described in item 34 of the scope of patent application, which further includes: removing the active layer on the curtain layer of the patterned epitaxial hood, and light emission can be formed naturally along the crack. Component production 0769-8557TW; VTERA-91-006-1 ^; Felicia.ptd page 22