TW560017B - Semiconductor connection substrate - Google Patents

Semiconductor connection substrate Download PDF

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Publication number
TW560017B
TW560017B TW091115440A TW91115440A TW560017B TW 560017 B TW560017 B TW 560017B TW 091115440 A TW091115440 A TW 091115440A TW 91115440 A TW91115440 A TW 91115440A TW 560017 B TW560017 B TW 560017B
Authority
TW
Taiwan
Prior art keywords
substrate
semiconductor connection
metal wiring
semiconductor
connection substrate
Prior art date
Application number
TW091115440A
Other languages
Chinese (zh)
Inventor
Toshiya Satoh
Masahiko Ogino
Takao Miwa
Takashi Naitou
Takashi Namekawa
Original Assignee
Hitachi Ltd
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Publication date
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Publication of TW560017B publication Critical patent/TW560017B/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49827—Via connections through the substrates, e.g. pins going through the substrate, coaxial cables
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49811—Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
    • H01L23/49816—Spherical bumps on the substrate for external connection, e.g. ball grid arrays [BGA]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49822—Multilayer substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49866—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers characterised by the materials
    • H01L23/49894—Materials of the insulating layers or coatings
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/16—Printed circuits incorporating printed electric components, e.g. printed resistor, capacitor, inductor
    • H05K1/162—Printed circuits incorporating printed electric components, e.g. printed resistor, capacitor, inductor incorporating printed capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12044—OLED
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901—Structure
    • H01L2924/19011—Structure including integrated passive components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3011—Impedance
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/09—Shape and layout
    • H05K2201/09209—Shape and layout details of conductors
    • H05K2201/095—Conductive through-holes or vias
    • H05K2201/09509—Blind vias, i.e. vias having one side closed
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/09—Shape and layout
    • H05K2201/09209—Shape and layout details of conductors
    • H05K2201/09654—Shape and layout details of conductors covering at least two types of conductors provided for in H05K2201/09218 - H05K2201/095
    • H05K2201/09763—Printed component having superposed conductors, but integrated in one circuit layer
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/46—Manufacturing multilayer circuits
    • H05K3/4602—Manufacturing multilayer circuits characterized by a special circuit board as base or central core whereon additional circuit layers are built or additional circuit boards are laminated

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Parts Printed On Printed Circuit Boards (AREA)
  • Production Of Multi-Layered Print Wiring Board (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

A kind of semiconductor connection substrate is provided in the present invention, in which the semiconductor connection substrate is capable of improving the problems such as large size of module generated from the substrate depending on the mounted single passive device and increase of mounting cost, and has high reliability, excellent manufacture yield, small size and high performance, so as to integrate plural kinds of electronic components in high-density such as capacitors, inductors, resistors and so on. A kind of semiconductor connection substrate is used to connect semiconductor devices on the mounting substrate such as the printed circuit board. The invention is featured with having the followings: the insulation substrate; the capacitor devices composed of plural electrodes having different areas on the insulation substrate and the dielectric material sandwiched between the electrodes; one or plural devices selected from inductor devices and resistor devices; metal wiring connecting the devices; metal terminal portion of one part of the metal wiring; and the organic insulation material, which covers the periphery of the metal wiring part excluding the device and the metal terminal portion.

Description

560017 A7 B7560017 A7 B7

五、發明説明（P (技術領域） (請先閱讀背面之注意事項再填寫本頁) 本發明是關於一種電子零件及其製造技術，尤其是關 於一種適用於在基板使用玻璃的電子零件及其製造的有效 技術。 (背景技術） 日本特開平8 - 2 5 5 9 8 1號公報是揭示使用依紫 外線的感光性材料的曝光處理而在基板上形成通孔或配線 的技術。該公報是藉由在玻璃基板上形成T i，C r， Al，Ni，W，Mo, Ta，Cu等金屬所構成的光遮 斷膜，防止感光性聚醯材料的曝光處理時，在玻璃基板的 上面與下面之間所產生的紫外線的多重反射。又，藉由將 上述金屬所構成的光遮斷膜的膜厚作成3 // m以上，俾提 高玻璃基板的熱傳導性。 經濟部智慈財產局員工消費合作社印製 曰本特開平9 一 3 2 1 1 8 4號公報，是揭示用以連 接高配線密度的半導體晶片與低配線密度的印刷配線基板 的連接基板及其製造技術。該連接基板是感光性玻璃基板 所構成，而在其上面形成有晶片之突塊所連接的一層配線 。又，在基板下面形成有連接於印刷配線基板的電極的複 數凸塊。基板的上面配線與下面突塊是經由貫通基板上下 面的孔被電氣式地連接。此些貫通孔是藉由微影成像術所 形成，在其內部藉電鍍塡入導體。 曰本特開2 0 0 0 — 1 2 4 3 5 8號公報，是指示在 矽基板上，配置Μ I Μ型電容與螺旋型感應器與薄膜電阻 1紙張尺度適用中國國家標準（〇、5)六4規格（210\ 297公釐) 一— -4- 560017 A7 _______^_；_ 五、發明説明（2) (請先閲讀背面之注意事項再填寫本頁) 及連接此些的金屬配線，又在該上面藉倒裝片接合安裝能 動元件的高頻積體電路的技術。又在該公報未記載有詳細 內容，效果等，惟記載著使用玻璃基板的申請專利範圍。 在曰本特開平1 〇 一 2 8 4 6 9 4號公報，揭示在電 阻率爲2 0 0 Ω · c m以上的多晶矽製基板上構成電子電 路的技術。 在用以安裝電子零件的配線基板，廣泛使用在含有玻 璃纖維的環氧樹脂或聚醯亞胺樹脂等所構成的樹脂基板形 成C u配線者，或是在A 1 N或S i C等所構成的陶瓷基 板形成以配線者。 然而，樹脂或陶瓷的配線材料是與使用於製造半導體 積體電路的矽基板相比較彎曲或尺寸變動較大，無法形成 使用微影成像術的測微計級的微細配線或穿通孔之故，因 而很難高密度安裝電子零件。 經濟部智慈財產局員工消費合作社印製 另一方面，適用於形成微細配線的矽基板，是與玻璃 環氧基板等相比較較高價之數，因而作爲安裝電子構件的 配線基板是通用性較低，而用途被限定。又，單晶矽基板 是半導體之故，因而成爲降低形成於其上面的電容器，感 感器等的電子零件的效率。另一方面，多晶的矽基板是可 防止降低該效率某種程度，惟仍比單晶基板較高價之故， 因而作爲安裝電子構件的配線基板是通用性較低，而用途 被限定。 玻璃是與樹脂或陶瓷相比較彎曲或尺寸變動較小，且 與矽相比較具備低成本的特徵之故，因而可適用作爲將電 K紙張尺度適用中國國家標準（CNS ) A4規格（21〇X297公釐） " -5- 560017 A7 B7 五、發明説明（3) 子零件高密度地實裝的基板的材料。又，玻璃基板是良好 (請先閲讀背面之注意事項再填寫本頁) 絕緣體，所以形成於其上面的感應器等的元件是具有高效 率。 但是，如特開2 0 0 0 - 1 2 4 3 5 8號公報的一般 玻璃基板，是熱傳導性較差，較容易損壞，而藉由玻璃製 基板與其他材料（S i )之間的熱膨脹率差，會在基板內 常常發生裂痕或破裂，其結果，成爲降低良率，也降低可 靠性。 又，爲了在玻璃基板高密度地安裝電子零件，或廣泛 用途地使用玻璃基板，如在樹脂或陶瓷的玻璃基板所進行 ，必須從基板背面（與電子零件安裝面相反側的面）取出 成爲外部端子的電極。 爲了從玻璃基板背面取出外部連接端子，成爲需要在 較高尺寸精度形成貫通孔於玻璃基板的技術，惟使用例如 記載於上述的公報（特開平9 一 3 2 1 1 8 4號）的特殊 感光性玻璃，會使得基板的製造成本變高，而作爲用以安 裝電子零件的配線基板被限定用途。 經濟部智慧財產局員工消費合作社印製 又，如在上述公報（特開2 0 0 0 — 1 2 4 3 5 8號 )的基板上，均配設電容器，感應器，電阻器等多種電子 零件時，會使積體的電子零件的大小變大。 又，在上述的公報，形成於玻璃基板上的各構成要素 成爲露出於玻璃基板的端面的構成之故，因而從更大玻璃 基板以切割等切出電子零件之際，有較大機械式應力施加 構成半導體連接基板的各層界面領域之情形，或隨著施加 本紙張尺度適用中國國家標隼（CNS ) A4規格（210X297公釐） -6 - 560017 A7 ___B7_ 五、發明説明（4) (請先閱讀背面之注意事項再填寫本頁) 於安裝半導體連接基板時的急激地溫度變動會使較大熱應 力施加於各層的界面領域之情形，則此些應力集中地施加 於露出在半導體連接基板之端面的基板與各界面領域，由 此使得各層界面領域成爲剝離，而有半導體連接基板損壞 的情況。 如此地，既知的此種半導體連接基板，是不一定能得 到高可靠性者，而也有不一定能得到高製造良率的情形者 〇 本發明的目的是在於提供一種高性能且高密度地積體 電容器，感應器，電阻等各種電子零件的半導體連接基板 (發明之槪要） 經濟部智慧財產局員工消費合作社印製 爲了達成上述目的，屬於將半導體元件連接於印刷基 板等的安裝基板的半導體連接基板，其特徵爲具有：絕緣 性基板，及設在上述絕緣性基板上的面積不相同的複數電 極及從夾在其中間的介質材料所構成的電容器元件，及感 應器元件，電阻元件所選擇的一或複數元件，及連接上述 元件的金屬配線，及上述金屬配線的一部分的金屬端子部 ，及覆蓋除了上述元件及上述金屬端子部之外的金屬配線 部分的周圍的有機絕緣材，可得到製造良率優異。且以高 密度積體電容器，感應器，電阻等各種電子零件的半導體 連接基板。 又，爲了達成上述目的，屬於將半導體元件連接於印 ^紙張尺度適用中國國家標準( CNS ) A4規格（210X297公釐） 560017 A7 B7 五、發明説明（5) (請先閱讀背面之注意事項再填寫本頁) 刷基板等的安裝基板的半導體連接基板，其特徵爲具有： 絕緣性基板，及設在上述絕緣性基板上的複數電極，及從 夾在其中間的介質材料所構成的電容器元件，及感應器元 件，電阻元件所選擇的一或複數元件，及設在上述電極的 端部以外的部分的連接部，及連接上述元件的金屬配線， 及上述金屬配線的一部分的金屬端子部，及覆蓋除了上述 元件及上述金屬端子部之外的金屬配線部分的周圍的有機 絕緣材，可得到製造良率優異。且以高密度積體電容器， 感應器，電阻等各種電子零件的半導體連接基板。 經濟部智慧財產局員工消费合作社印製 又，爲了達成上述目的，屬於將半導體元件連接於印 刷基板等的安裝基板的半導體連接基板，其特徵爲具有： 絕緣性基板，及設在上述絕緣性基板上的複數電極，及從 夾在其中間的介質材料所構成的電容器元件，及感應器元 件，電阻元件所選擇的一或複數元件，及連接上述元件的 金屬配線，及上述金屬配線的一部分且格子狀地排列的金 屬端子部，及覆蓋除了上述元件及金屬端子部之外的金屬 配線部分的周圍的有機絕緣材，可得到製造良率優異，且 以高密度積體電容器，感應器，電阻等各種電子元件，容 易與連接基板等其他零件連接的半導體連接基板。 又，爲了達成上述目的，屬於將半導體元件連接於印 刷基板等的安裝基板的半導體連接基板，其特徵爲具有： 絕緣性基板，及設在上述絕緣性基板上的複數電極，及從 夾在其中間的介質材料所構成的電容器元件，及感應器元 件，電阻元件所選擇的一或複數元件，及連接上述元件的 本紙張尺度適用中國國家標準（CNS ) A4規格（210X 297公釐） -8- 560017 A7 __ _B7___ 五、發明説明（6) (請先閱讀背面之注意事項再填寫本頁) 金屬配線，及上述金屬配線的一部分的金屬端子部，及覆 蓋除了上述元件及上述金屬端子部之外的金屬配線部分的 周圍的有機絕緣材，可得到製造良率優異，且選擇適用於 各元件的必需高頻特性的有機絕緣材而以高密度高性能地 積體電容器，感應器，電阻等各種電子元件的半導體連接 基板。 經濟部智慧財產局員工消費合作社印製 又，爲了達成上述目的，屬於將半導體元件連接於印 刷基板等的安裝基板的半導體連接基板，其特徵爲具有： 在所定位置設有貫通孔的絕緣性基板，及設在上述絕緣性 基板的主面與副主面的兩面或單面的面積不相同的複數電 極及從夾在其中間的介質材料所構成的電容器元件，及感 應器元件，電阻元件所選擇的一或複數元件，及連接上述 元件的金屬配線，及形成在電氣式連接上述金屬配線的上 述貫通孔的內部的導體部，及上述金屬配線的一部分的金 屬端子部，及覆蓋除了上述元件及金屬端子部之外的金屬 配線部分的周圍的有機絕緣材，可得到製造良率優異，且 以高密度積體電容器，感應器電阻等各種電子零件的半導 體連接基板。 又，爲了達成上述目的，屬於將半導體元件連接於印 刷基板等的安裝基板的半導體連接基板，其特徵爲具有： 在所定位置設有貫通孔的絕緣性基板，及設在上述絕緣性 基板的主面與副主面的兩面或單面的複數電極及從夾在其 中間的介質材料所構成的電容器元件，及感應器元件，電 阻元件所選擇的一或複數元件，及設在上述電極的端部的 本紙張尺度適用中國國家標準( CNS ) A4規格（ 210X 297公釐） -9 - 560017 A7 B7 五、發明説明（7) (請先閱讀背面之注意事項再填寫本頁) 以外的部分的連接部，及連接上述元件與上述連接部的金 屬配線，及形成在電氣式連接上述金屬配線的上述貫通孔 的內部的導體部，及上述金屬配線的一部分的且格子狀地 排列的金屬端子部，及覆蓋除了上述元件及金屬端子部之 外的金屬配線部分的周圍的有機絕緣材，可得到製造良率 優異，且以高密度積體電容器，感應器電阻等各種電子元 件，容易與連接基板等其他零件連接的半導體連接基板。 經濟部智慧財產局員工消资合作社印製 爲了達成上述目的，屬於將半導體元件連接於印刷基 板等的安裝基板的半導體連接基板，其特徵爲具有：在所 定位置設有貫通孔的絕緣性基板，及設在上述絕緣性基板 的主面與副主面的兩面或單面的複數電極及從夾在其中間 的介質材料所構成的電容器元件，及感應器元件，電阻元 件所選擇的一或複數元件，及連接上述元件的金屬配線， 及形成在電氣式連接上述金屬配線的上述貫通孔的內部的 導體部，及上述金屬配線的一部分的且格子狀地排列的金 屬端子部，及覆蓋除了上述元件及上述金屬端子部之外的 金屬配線部分的周圍的有機絕緣材，可得到製造良率優異 ，且以高密度積體電容器，感應器，電阻等各種電子元件 ，與連接基板等其他零件容易連接的半導體連接基板。 爲了達成上述目的，屬於將半導體元件連接於印刷基 板等的安裝基板的半導體連接基板，其特徵爲具有：在所 定位置設有貫通孔的絕緣性基板，及設在上述絕緣性基板 的主面與副主面的兩面或單面的複數電極及從夾在其中間 的介質材料所構成的電容器元件，及感應器元件，電阻元 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） -10- 560017 A7 B7 五、發明説明（8) (請先閱讀背面之注意事項再填寫本頁) 件所選擇的一或複數元件，及連接上述元件的金屬配線， 及形成在電氣式連接上述金屬配線的上述貫通孔的內部的 導體部，及上述金屬配線的一部分的金屬端子部，及覆蓋 除了上述元件及上述金屬端子部之外的金屬配線部分的周 圍的有機絕緣材，可得到製造良率優異，且選擇適用於各 元件的必需高頻特性的有機絕緣材而以高密度高性能地積 體電容器，感應器，電阻等各種電子元件的半導體連接基 板。 經濟部智慧財產局員工消費合作社印製 又，爲了達成上述目的，屬於將半導體元件連接於印 刷基板等的安裝基板的半導體連接基板，其特徵爲具有： 在所定位置設有貫通孔的絕緣性基板，及設在上述絕緣性 基板的主面與副主面的兩面或單面的複數電極及從夾在其 中間的介質材料所構成的電容器元件，及感應器元件，電 阻元件所選擇的一或複數元件，及連接上述元件的金屬配 線，及形成在電氣式連接上述金屬配線的上述貫通孔內部 的導體部，及上述金屬配線的一部分的金屬端子部，及覆 蓋除了設於上述絕緣性基板的主面的上述元件與上述金屬 端子部之外的金屬配線部分的周圍的複數第一有機絕緣材 ，及覆蓋除了設於上述絕緣性基板的副主面的上述元件與 上述金屬端子部之外的金屬配線部分的周圍的複數第二有 機絕緣材，可得到製造良率優異，且選擇適用於各元件的 必需高頻特性的有機絕緣性材而以高密度高性能地積體電 容器，感應器，電阻等等各種電子元件的半導體連接基板 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） -11 - 560017 A7 B7 五、發明説明（9) (請先閱讀背面之注意事項再填寫本頁) 又’爲了達成上述目的，屬於將半導體元件連接於印 刷基板等的安裝基板的半導體連接基板，其特徵爲具有： 在所定位置設有貫通孔的絕緣性基板，及設在上述絕緣性 基板的主面與副主面的兩面或單面的複數電極及從夾在其 中間的介質材料所構成的電容器元件，及感應器元件，電 阻元件所選擇的一或複數元件，及連接上述元件的金屬配 線，及形成在電氣式連接上述金屬配線的上述貫通孔內部 的導體部，及上述金屬配線的一部分且設在與上述感應器 元件不相同面的金屬端子部，及覆蓋除了上述元件及上述 金屬端子部之外的金屬配線部分的周圍的有機絕緣材，可 得到製造良率優異，且可減少因搭載電子零件的基板等對 於感應器元件的影響，而以高密度高性能地積體電容器， 感應器，電阻等各種電子元件的半導體連接基板。 經濟部智慧財產局員工消費合作社印製 又，爲了達成上述目的，屬於將半導體元件連接於印 刷基板等的安裝基板的半導體連接基板，其特徵爲具有： 在所定位置設有貫通孔的絕緣性基板，及設在上述絕緣性 基板的主面與副主面的兩面或單面的複數電極及從夾在其 中間的介質材料所構成的電容器元件，及感應器元件，電 阻元件所選擇的一或複數元件，及連接上述元件的金屬配 線，及形成在電氣式連接上述金屬配線的上述貫通孔內部 的導電性物質及核形成物質及玻璃所構成導體部，及上述 金屬配線的一部分的金屬端子部，及覆蓋除了上述元件及 上述金屬端子部之外的金屬配線部分的周圍的有機絕緣材 ，可得到製造良率優異，且可確實地得到基板兩面的電氣 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） -12- 560017 A7 B7 五、發明説明（^ 式導通，以高密度高性能地積體電容器，感應器，電阻等 各種電子零件的半導體連接基板。 又，爲了達成上述目的，藉由複數電極及夾在其中間 的介質材料所構成的電容器元件，及感應器元件，電阻元 件及上述絕緣性基板之距離不相同，可更高密度地積體電 容器，感應器，電阻等元件。 又，爲了達成上述目的，絕緣性基板使用玻璃基板， 由於玻璃基板的低成本，高平滑性，高絕緣性，低介質分 離率，因此可用更低成本得到高性能的半導體連接基板。 又，爲了達成上述目的，在有機絕緣材使用感光性有 機絕緣材，而可刪減製造時的處理，並減低製造成本之故 ，因而可得到更低成本的半導體連接基板。 又，爲了達成上述目的，有機絕緣材含有以一般式〔 化1〕所表示的苯乙烯基的交聯戊分，又含有重量平均分 子量5 0 0 0以上的高分子量體的低介質分離率樹脂組成 物’上述低介質分離率樹脂組成物爲低成本，低介質常數 及低介質分離率之故，因而低成本地可得到更高性能又高 效率的半導體連接基板。 【化1】V. Description of the Invention (P (Technical Field) (Please read the notes on the back before filling out this page) The present invention relates to an electronic part and its manufacturing technology, especially to an electronic part suitable for using glass on a substrate and its (Background Art) Japanese Patent Application Laid-Open No. 8-2 5 5 9 8 1 discloses a technique for forming a through hole or a wiring on a substrate using an exposure process using a photosensitive material that is ultraviolet ray. A light-blocking film made of a metal such as T i, C r, Al, Ni, W, Mo, Ta, Cu, etc. is formed on a glass substrate to prevent the exposure process of the photosensitive polyfluorene material. Multiple reflections of ultraviolet rays generated between the bottom and the film thickness of the light-blocking film made of the above metal are made 3 // m or more to increase the thermal conductivity of the glass substrate. Employees, Intellectual Property Office, Ministry of Economic Affairs Printed by a consumer cooperative in Japanese Patent Application Laid-Open No. 9-1 2 1 1 8 4 discloses a connection substrate for connecting a semiconductor wafer with a high wiring density and a printed wiring substrate with a low wiring density, and a manufacturing method thereof This connection substrate is made of a photosensitive glass substrate, and a layer of wiring connected to the bumps of the wafer is formed on the connection substrate. A plurality of bumps connected to electrodes of the printed wiring substrate are formed below the substrate. The upper wiring and the lower bump are electrically connected through holes on the upper and lower sides of the substrate. These through holes are formed by lithography, and the conductors are plated into the conductors by electroplating. 0 — 1 2 4 3 5 No. 8 is an instruction on the silicon substrate for the configuration of ML capacitors and spiral inductors and thin film resistors. 1 Paper size is applicable to Chinese national standards (〇, 5), 6 4 specifications (210 \ 297 mm) I — -4- 560017 A7 _______ ^ _; _ 5. Description of the invention (2) (Please read the precautions on the back before filling out this page) and connect these metal wirings, and borrow on them The technology of mounting and joining high-frequency integrated circuits for mounting active elements. No details, effects, etc. are described in this publication, but the scope of patent applications using glass substrates is described in Japanese Patent Application Laid-Open No. 010-2 8 4 Bulletin 6 9 4 Shown is a technology for forming electronic circuits on a polycrystalline silicon substrate with a resistivity of 200 Ω · cm or more. Wiring boards used to mount electronic components are widely used in glass fiber-containing epoxy resins or polyimide resins. Resin substrates that form Cu wiring or those that form wiring on ceramic substrates such as A 1 N or Si C. However, resin or ceramic wiring materials are used in the manufacture of semiconductor integrated circuits. The silicon substrate is relatively curved or has a large dimensional change, which makes it impossible to form micrometer-level micro-wiring or through-holes using lithography, making it difficult to mount electronic components at high density. Printed by the Intellectual Property Bureau of the Ministry of Economic Affairs and Consumer Cooperatives. On the other hand, silicon substrates suitable for forming fine wiring are more expensive than glass epoxy substrates. Therefore, it is more versatile as a wiring substrate for mounting electronic components. Low, while use is limited. The single crystal silicon substrate is a semiconductor, which reduces the efficiency of electronic components such as capacitors and sensors formed thereon. On the other hand, polycrystalline silicon substrates can prevent this efficiency from being lowered to some extent, but they are still more expensive than single crystal substrates. Therefore, they are less versatile as wiring boards for mounting electronic components, and their use is limited. Compared with resin or ceramic, glass has less bending or dimensional change, and it has the characteristics of low cost compared to silicon, so it can be used as the standard for electrical paper in China (CNS) A4 specification (21〇297). (Mm) " -5- 560017 A7 B7 V. Description of the invention (3) Sub-components are made of high-density substrate material. In addition, the glass substrate is a good insulator (please read the precautions on the back before filling this page), so the components such as inductors formed on it are highly efficient. However, general glass substrates such as JP-A 2000-2000, 1 2 4 3 5 8 have poor thermal conductivity and are easily damaged, and the thermal expansion coefficient between the glass substrate and other materials (S i) Poor, cracks or cracks often occur in the substrate, and as a result, the yield is lowered and the reliability is lowered. In addition, in order to mount electronic components on a glass substrate with high density, or to use a glass substrate in a wide range of applications, such as a glass substrate made of resin or ceramic, it must be taken out from the back surface of the substrate (the surface opposite to the mounting surface of the electronic component) to the outside. The electrode of the terminal. In order to take out the external connection terminals from the rear surface of the glass substrate, it is necessary to form a through-hole in the glass substrate with high dimensional accuracy. However, for example, a special photosensitivity described in the aforementioned publication (Japanese Patent Application Laid-Open No. 9-3 2 1 1 8 4) is used. Tempered glass can increase the manufacturing cost of the substrate, and is limited in use as a wiring substrate for mounting electronic components. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs, such as capacitors, inductors, resistors and other electronic components on the substrate of the above-mentioned bulletin (Japanese Laid-Open No. 2000-1 2 4 3 5 8) As a result, the size of the integrated electronic parts becomes larger. Further, in the above-mentioned publication, each constituent element formed on the glass substrate has a structure exposed on the end surface of the glass substrate. Therefore, when an electronic component is cut out from a larger glass substrate by cutting or the like, there is a large mechanical stress. Application of the interface area of each layer constituting the semiconductor connection substrate, or with the application of this paper, the Chinese National Standard (CNS) A4 specification (210X297 mm) -6-560017 A7 ___B7_ V. Description of the invention (4) (please first (Please read the precautions on the back and fill in this page again.) In the case where rapid temperature changes during the mounting of the semiconductor connection substrate will cause large thermal stress to be applied to the interface area of each layer, these stresses will be concentratedly applied to the exposed semiconductor connection substrate. The substrate on the end face and each interface area may be peeled off, and the semiconductor connection substrate may be damaged. In this way, the known semiconductor connection substrates are not necessarily capable of obtaining high reliability, and there are cases where high manufacturing yield is not necessarily obtained. The object of the present invention is to provide a high-performance and high-density integrated circuit. Semiconductor connection substrates for various electronic components such as capacitors, inductors, resistors, etc. (Key points of the invention) Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economy The substrate is characterized by having an insulating substrate, a plurality of electrodes having different areas provided on the insulating substrate, a capacitor element composed of a dielectric material sandwiched therebetween, and an inductor element and a resistor element selected. One or more components, and metal wirings connecting the components, metal terminal portions of the metal wirings, and organic insulating materials covering the periphery of the metal wiring portions other than the components and the metal terminal portions can be obtained. Excellent manufacturing yield. Semiconductor connection substrates for various electronic components such as high-density capacitors, inductors, and resistors. In addition, in order to achieve the above purpose, it is a standard for connecting semiconductor components to printed paper. The Chinese National Standard (CNS) A4 specification (210X297 mm) is applicable. 560017 A7 B7 V. Description of the invention (5) (Please read the precautions on the back before (Fill in this page) A semiconductor connection substrate for mounting substrates such as brush substrates, which has an insulating substrate, a plurality of electrodes provided on the insulating substrate, and a capacitor element made of a dielectric material sandwiched therebetween. And one or more elements selected for the sensor element, the resistance element, and the connection part provided at a part other than the end of the electrode, and the metal wiring connecting the element, and the metal terminal part of the metal wiring, And an organic insulating material covering the periphery of a metal wiring portion other than the above-mentioned element and the above-mentioned metal terminal portion, and excellent manufacturing yield can be obtained. Semiconductor connection substrates for various electronic components such as high-density capacitors, inductors, and resistors. Printed by the Consumers' Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs, in order to achieve the above-mentioned purpose, a semiconductor connection substrate belonging to a mounting substrate for connecting a semiconductor element to a printed circuit board, etc. A plurality of electrodes, a capacitor element composed of a dielectric material sandwiched therebetween, and one or more elements selected from an inductor element and a resistance element, and metal wiring connecting the above elements, and a part of the above metal wiring, and The metal terminal portions arranged in a grid pattern and the organic insulating material covering the periphery of the metal wiring portions other than the above-mentioned elements and metal terminal portions can obtain capacitors, inductors, and resistors with excellent manufacturing yield and high density. Various types of electronic components, such as semiconductor connection substrates that are easily connected to other components such as connection substrates. In order to achieve the above object, a semiconductor connection substrate, which is a semiconductor substrate connected to a mounting substrate such as a printed circuit board, includes an insulating substrate, a plurality of electrodes provided on the insulating substrate, and a sandwich therebetween. Capacitor elements composed of dielectric materials, inductor elements, one or more elements selected for resistance elements, and the paper size connecting these elements are applicable to China National Standard (CNS) A4 (210X 297 mm) -8 -560017 A7 __ _B7___ 5. Description of the invention (6) (Please read the precautions on the back before filling out this page) Metal wiring, and the metal terminal part of the above metal wiring, and covering the above components and the metal terminal The organic insulating material around the outer metal wiring portion can be obtained with excellent manufacturing yield, and the organic insulating material required for the high-frequency characteristics of each element can be selected to integrate capacitors, inductors, and resistors with high density and high performance. Semiconductor connection substrate for electronic components. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. In order to achieve the above-mentioned purpose, a semiconductor connection substrate belonging to a mounting substrate for connecting a semiconductor element to a printed circuit board or the like is characterized by having an insulating substrate provided with through holes at predetermined positions. And capacitor elements composed of a plurality of electrodes having different areas on the main surface and the sub-main surface of the above-mentioned insulating substrate, or a single surface, and a capacitor element composed of a dielectric material sandwiched therebetween, and an inductor element and a resistance element. Selected one or more components, and metal wirings connecting the components, and a conductor portion formed inside the through hole electrically connecting the metal wirings, and a metal terminal portion of a part of the metal wirings, and covering except the components Organic insulation materials around metal wiring portions other than metal terminal portions can be used to obtain semiconductor connection substrates with excellent manufacturing yields and various electronic components such as capacitors and inductor resistors with high density. In addition, in order to achieve the above object, a semiconductor connection substrate, which is a semiconductor substrate connected to a mounting substrate such as a printed circuit board, is characterized by having an insulating substrate provided with through holes at predetermined positions, and a main body provided on the insulating substrate. Two or one side of a plurality of electrodes on the surface and the sub-main surface and a capacitor element composed of a dielectric material sandwiched therebetween, and one or a plurality of elements selected from an inductor element and a resistance element, and provided at the ends of the electrode This paper's dimensions apply to Chinese National Standard (CNS) A4 specifications (210X 297 mm) -9-560017 A7 B7 V. Description of the invention (7) (Please read the precautions on the back before filling this page) A connection portion, a metal wiring connecting the element and the connection portion, a conductor portion formed inside the through hole electrically connecting the metal wiring, and a metal terminal portion arranged in a grid pattern as a part of the metal wiring And the organic insulating material covering the periphery of the metal wiring portion other than the above-mentioned element and the metal terminal portion can obtain a manufacturing yield Excellent semiconductor connection substrate with various electronic components such as high-density integrated capacitors and inductor resistors, and easily connected to other components such as connection substrates. Printed by the Consumers ’Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. In order to achieve the above purpose, the semiconductor connection board is a mounting substrate for connecting a semiconductor element to a mounting substrate such as a printed circuit board. And one or a plurality of capacitor elements composed of a plurality of electrodes and a dielectric material sandwiched between the main surface and the sub-main surface of the insulating substrate and a dielectric material sandwiched therebetween, and an inductor element or a resistance element A component, a metal wiring connected to the component, and a conductor portion formed inside the through-hole electrically connecting the metal wiring, and a metal terminal portion of the metal wiring arranged in a grid pattern, and covering the above Components and organic insulating materials around metal wiring portions other than the metal terminal portion can obtain various electronic components such as capacitors, inductors, resistors, and the like with excellent manufacturing yield, and are easily connected to other parts such as a substrate. Connected semiconductor connection substrate. In order to achieve the above object, a semiconductor connection substrate, which is a semiconductor substrate connected to a mounting substrate such as a printed circuit board, includes an insulating substrate provided with through holes at predetermined positions, and a main surface of the insulating substrate and Capacitor elements composed of two or one side of the sub-primary surface and a capacitor element composed of a dielectric material sandwiched therebetween, and inductor elements, and the resistance element paper size are applicable to China National Standard (CNS) A4 specifications (210X297 mm) -10- 560017 A7 B7 V. Description of the invention (8) (Please read the precautions on the back before filling this page) One or more components selected by the component, and the metal wiring connecting the components, and the electrical connection formed above The conductive part inside the through-hole of the metal wiring, the metal terminal part of a part of the metal wiring, and the organic insulating material covering the periphery of the metal wiring part other than the element and the metal terminal part can be manufactured well. High-density, high-performance, high-density, high-performance The semiconductor substrate is connected various electronic components of capacitors, inductors, resistors and the like. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. In order to achieve the above-mentioned purpose, a semiconductor connection substrate belonging to a mounting substrate for connecting a semiconductor element to a printed circuit board or the like is characterized by having an insulating substrate provided with through holes at predetermined positions. And one or more of a capacitor element composed of a plurality of electrodes provided on both sides of the main surface and the sub-main surface of the insulating substrate or a single surface and a dielectric material sandwiched therebetween, and an inductor element or a resistance element selected A plurality of elements, and metal wirings connected to the elements, and conductor portions formed inside the through-holes electrically connecting the metal wirings, and metal terminal portions of a part of the metal wirings, and covering other than those provided on the insulating substrate. A plurality of first organic insulating materials around the element on the main surface and a metal wiring portion other than the metal terminal portion; and a portion covering the element and the metal terminal portion except the element provided on the sub-main surface of the insulating substrate A plurality of second organic insulating materials around the metal wiring portion can provide excellent manufacturing yield And select organic insulating materials suitable for the required high-frequency characteristics of various components and integrate semiconductor substrates for various electronic components with high density and high performance, such as capacitors, inductors, resistors, etc. This paper applies the Chinese National Standard (CNS) A4 specifications (210X297 mm) -11-560017 A7 B7 V. Description of the invention (9) (Please read the precautions on the back before filling out this page) And 'In order to achieve the above purpose, it belongs to the connection of semiconductor components to printed substrates, etc. A semiconductor connection substrate on which a substrate is mounted, comprising: an insulating substrate having a through hole at a predetermined position; and a plurality of electrodes provided on both or single sides of a main surface and a sub-main surface of the insulating substrate, and sandwiched between The capacitor element composed of the intermediate dielectric material, the inductor element, one or more elements selected for the resistance element, the metal wiring connecting the elements, and the conductor formed inside the through hole electrically connecting the metal wiring. And a metal terminal portion that is a part of the metal wiring and is provided on a different surface from the inductor element, and The organic insulating material that covers the periphery of the metal wiring portion other than the above-mentioned element and the above-mentioned metal terminal portion can obtain an excellent manufacturing yield, and can reduce the influence of the substrate on which the electronic component is mounted on the sensor element at a high density. High-performance semiconductor connection substrates for various electronic components such as capacitors, inductors, and resistors. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. In order to achieve the above-mentioned purpose, a semiconductor connection substrate belonging to a mounting substrate for connecting a semiconductor element to a printed circuit board or the like is characterized by having an insulating substrate provided with through holes at predetermined positions. And one or more of a capacitor element composed of a plurality of electrodes provided on both sides of the main surface and the sub-main surface of the insulating substrate or a single surface and a dielectric material sandwiched therebetween, and an inductor element or a resistance element selected A plurality of elements, and metal wirings connected to the elements, and conductive portions formed of a conductive substance, a core-forming substance, and glass formed inside the through-holes electrically connecting the metal wirings, and metal terminal portions that are part of the metal wirings And the organic insulating material covering the periphery of the metal wiring portion other than the above-mentioned element and the above-mentioned metal terminal portion, can obtain excellent manufacturing yield, and can reliably obtain the electricity on both sides of the substrate. This paper applies the Chinese National Standard (CNS) A4 specifications (210X297 mm) -12- 560017 A7 B7 V. Description of the invention (^ Continuity, high-density, high-performance, high-density capacitors, inductors, resistors, and other electronic component semiconductor connection substrates. In order to achieve the above purpose, a capacitor element composed of a plurality of electrodes and a dielectric material interposed therebetween, and The distance between the sensor element, the resistance element and the above-mentioned insulating substrate is not the same, and components such as a capacitor, an inductor, and a resistor can be integrated at a higher density. In addition, in order to achieve the above purpose, a glass substrate is used for the insulating substrate. Cost, high smoothness, high insulation, and low dielectric separation rate, so a high-performance semiconductor connection substrate can be obtained at a lower cost. In addition, in order to achieve the above purpose, a photosensitive organic insulating material is used for the organic insulating material, which can be deleted. Processing at the time of manufacturing reduces the manufacturing cost, so that a semiconductor connection substrate with lower cost can be obtained. In addition, in order to achieve the above-mentioned object, the organic insulating material contains a styrene-based cross-linking represented by the general formula [Chem. 1] It is a low-molecular-weight compound containing a high-molecular-weight body having a weight-average molecular weight of 5,000 or more. Separation of the resin composition "of the low-dielectric resin composition of the separation cost, low dielectric constant and low rate so that the separation medium, thus better performance can be obtained at low cost and high efficiency of the semiconductor substrate is connected. [Chemical Formula 1]

(但，R是表示取代基也有良好的碳化氫骨架，R1是表 本紙張尺度適用中國國家標準（CNS ) A4規格（210'〆297公釐） (請先閱讀背面之注意事項再填寫本頁)(However, R indicates that the substituents also have a good hydrocarbon skeleton, and R1 is the paper size of the paper. Applicable to China National Standard (CNS) A4 specifications (210'〆297 mm). (Please read the precautions on the back before filling out this page. )

、1T 經濟部智慧財產局g(工消費合作社印製 -13- 560017 A7 B7 五、發明説明（y 不氫，甲基，乙基的任一種；m是表示1至4的整數；η 是表示2以上的整數） 又，爲了達成上述目的，有機絕緣材爲聚醯亞胺樹脂 ，聚醯亞胺的高熱安定性之故，因而可得到高可靠性的半 導體連接基板。 又，爲了達成上述目的，有機絕緣材爲苯醯基環丁烯 (BCB)， BCB是低介質常數，介質分離率之故，因 而可得到更高性能又高效率的半導體連接基板。 又，爲了達成上述目的，介質材料爲Ta， Mg,1T Intellectual Property Bureau of the Ministry of Economic Affairs (printed by the Industrial and Consumer Cooperatives-13-560017 A7 B7) 5. Description of the invention (y is not any of hydrogen, methyl, and ethyl; m is an integer representing 1 to 4; η is representing Integer 2 or more) In addition, in order to achieve the above object, the organic insulating material is a polyimide resin, and because of the high thermal stability of the polyimide, a highly reliable semiconductor connection substrate can be obtained. In addition, in order to achieve the above object The organic insulating material is phenylfluorenylcyclobutene (BCB). BCB has a low dielectric constant and a high dielectric separation rate, so that a semiconductor connection substrate with higher performance and higher efficiency can be obtained. In addition, in order to achieve the above purpose, a dielectric material For Ta, Mg,

Sr的任一種氧化物，Ta，Mg，Sr是具低成本且高 安定性之特性之故，因而可得低成本，高可靠性又高性能 的半導體連接基板。又，作爲介質材料，若使用T a氧化 物時則可提高絕緣耐壓；使用M g氧化物時則可提高0値 ;使用S r氧化物時則可作爲高。又，Θ値乃表示共鳴的 敏銳度（頻率選擇性）的量，以下式被定義。 Q = co(儲存能量）/損失=Im(Z)/Re(Z) 式中，I m ( Z )及R e ( Z )是各該元件的1埠（ 一對端子）阻抗的虛數成分與實數成分。 本發明的電容器元件是以兩個金屬電極隔著無機材料 所構成的介質材料的構造的一或複數電容器元件，及以兩 個金屬電極隔著有機材料所構成的介質材料的構造的一或 複數電容器元件所構成。又，電容器元件接近於玻璃基板 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） (請先閱讀背面之注意事項再填寫本頁) 訂 經濟部智慈財產局B(工消費合作社印製 -14- 560017 A7 B7 五、發明説明（4 之一邊的金屬電極的端部以介質材料以外的絕緣體所覆蓋 較理想。又將電容器元件的電極與感應器元件形成在同一 層，則可縮短感應器元件與電容器元件的距離，而在小型 化，低噪音化，高效率化及高性能化上有效。又，在感應 器元件的領域內配置電容器元件，則可縮感應器元件與電 容器元件的距離及可節省電子連接基板的電容器元件的佔 有面積而在小型，高積體化有效。 金屬電極是較低電阻的導電性材料較理想。具體而言 ，有金，銅，錬，銘，舶，鶴，銷，鐵，銀，駄，錬/絡 合金，鐵/鎳/鉻合金，氮化鉬等。尤其是銅的電阻較小 較理想。又，金屬電極是須平坦，而表面的凹凸爲介質材 料厚度的1 / 2 5以下較理想。又，將下部電極作成高融 點的金屬材料，則在形成介質之際，則可進行電射加工或 高溫燒成，而可提高高性能化（可適用高的介質材料） 及製造良率。作爲金屬電極的形成方法，是除了將上述導 電性材料成膜在所定膜厚之後，形成光阻圖案並藉由乾式 或濕式触刻所形成之外，還可以在形光阻圖案之後，藉由 電解或無電解電鍍所形成者。有關於金屬電極或其他配線 的形成方法，使用電鍍法時，可進行厚膜配線之故，因而 可·得到低電阻化，高效率化及高性能化。又，在使用濺鍍 法時，可形成微細圖案之故，因而可得到微細化，小型化 及高性能化。 又，無機材料是一般使用作爲電容器用介質材料者並 沒有加以限制，例如有T a，M g，S 等的氧化物。具 本紙張尺度適用中國國家標準（CNS ) A4規格（21〇χ297公釐） (請先閱讀背面之注意事項再填寫本頁) 訂 經濟部智慧財產局員工消費合作社印製 • memmmmwh · -15- 560017 Α7 Β7 五、發明説明（^ 而賦予感光性者也在加工性也優異而較理想。又，苯醯基 環丁烯樹脂是介質分離率較低，而作爲高頻零件使用本發 明的電容器時較理想。同樣地，以含有一般式（化1 )所 表示的複數苯乙烯基的交聯成分，又含有重量平均分子量 5 0 0 0以上的高分子量體的低介質分離率樹脂組成物， 也減低傳送損失而較理想。結合該樹脂組成物的苯乙烯基 間的骨架以含有亞甲基，次乙基等的烯烴基的碳化氫骨架 較理想。具體而言，有1，2 -雙（P —聯苯）乙烷，1 ，2 -雙（m -聯苯）乙烷及其類似體，在側鏈具有乙烯 基的二乙烯基苯的單獨聚合物，苯乙烯等的共聚物等的低 聚物。 【化1】 (請先閱讀背面之注意事項再填寫本頁) 訂 經濟部智慈財產局員工消費合作社印製Any of the oxides of Sr, Ta, Mg, and Sr has the characteristics of low cost and high stability. Therefore, a low-cost, highly reliable, and high-performance semiconductor connection substrate can be obtained. In addition, as the dielectric material, if the T a oxide is used, the insulation withstand voltage can be increased; when the M g oxide is used, it can be increased by 0 値; and when the S r oxide is used, it can be high. It is to be noted that Θ 量 is the amount of sensitivity (frequency selectivity) of resonance, and is defined by the following expression. Q = co (storage energy) / loss = Im (Z) / Re (Z) where I m (Z) and Re (Z) are the imaginary component of the impedance of one port (a pair of terminals) of each component and Real number component. The capacitor element of the present invention is one or more capacitor elements having a structure of a dielectric material composed of two metal electrodes with an inorganic material interposed therebetween, and one or more capacitor elements having a structure of a dielectric material composed of two metal electrodes with an organic material interposed therebetween. Capacitor element. In addition, the capacitor element is close to the glass substrate. The paper size applies the Chinese National Standard (CNS) A4 specification (210X297 mm) (Please read the precautions on the back before filling this page). Order the Intellectual Property Bureau of the Ministry of Economy B (Industrial Consumer Cooperative) Printed -14-560017 A7 B7 V. Description of the Invention (The end of the metal electrode on one side of 4 is ideally covered with an insulator other than dielectric material. If the electrode of the capacitor element and the inductor element are formed on the same layer, the The distance between the inductor element and the capacitor element is shortened, and it is effective in miniaturization, low noise, high efficiency, and high performance. When a capacitor element is arranged in the field of the inductor element, the inductor element and the capacitor can be shrunk. The distance between the components and the area occupied by the capacitor components of the electronic connection substrate are small and highly integrated. Metal electrodes are ideal for low-resistance conductive materials. Specifically, there are gold, copper, copper, and aluminum. , Ship, crane, pin, iron, silver, hafnium, hafnium / cold alloy, iron / nickel / chromium alloy, molybdenum nitride, etc. Especially copper with smaller resistance is ideal. The metal electrode must be flat, and the unevenness on the surface is preferably less than 1/2 of the thickness of the dielectric material. In addition, if the lower electrode is made of a metal material with a high melting point, when the medium is formed, it can be processed by electro-radiation or High-temperature firing can improve performance (suitable for high dielectric materials) and manufacturing yield. As a method for forming a metal electrode, in addition to forming the conductive material into a predetermined thickness, a photoresist pattern is formed and It can be formed by dry or wet engraving, and it can also be formed by electrolytic or electroless plating after forming the photoresist pattern. Regarding the method of forming metal electrodes or other wiring, when using the plating method, Because of the thick film wiring, low resistance, high efficiency, and high performance can be obtained. In addition, when a sputtering method is used, a fine pattern can be formed, so that miniaturization, miniaturization, and high performance can be obtained. In addition, inorganic materials are generally used as capacitor dielectric materials without any restrictions, for example, oxides such as T a, M g, and S. These paper standards apply to China. Standard (CNS) A4 specification (21 × 297 mm) (Please read the notes on the back before filling out this page) Order printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs • memmmmwh · -15- 560017 Α7 Β7 V. Description of the invention (^ And those who impart photosensitivity are also excellent in processability and are ideal. Also, the phenylfluorenyl cyclobutene resin has a low dielectric separation rate, and is preferably used as a high-frequency part of the capacitor of the present invention. Similarly, A low-medium-separation-rate resin composition containing a cross-linking component of a plurality of styrene groups represented by the general formula (Chemical Formula 1) and a high-molecular weight body having a weight-average molecular weight of 5000 or more is also preferable to reduce transmission loss It is preferable that a hydrocarbon skeleton containing an olefin group such as a methylene group, an ethylene group, or the like is bonded to the skeleton between the styrene groups of the resin composition. Specifically, there are 1,2-bis (P-biphenyl) ethane, 1,2-bis (m-biphenyl) ethane and the like, and divinylbenzene alone having vinyl group in the side chain. Polymers, oligomers such as copolymers of styrene. [Chemical 1] (Please read the notes on the back before filling out this page) Order Printed by the Employee Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs

(但，R是表示取代基也有良好的碳化氫骨架，R1是表 示氫，甲基，乙基的任一種；m是表示1至4的整數；η 是表示2以上的整數。） 又，上述有機絕緣材是具有作爲應力緩衝材之功能也 可以。具體而言，有氟橡膠，矽酮橡膠，氟化矽酮橡膠， 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） -17- 560017 A7 B7 五、發明説明（^ (請先閱讀背面之注意事項再填寫本頁) 丙烯酸橡膠，氫化乙腈橡膠，乙烯丙烯橡膠，氟磺化聚苯 乙烯，環氧橡膠，丁基橡膠，氫基甲酸酯橡膠，聚碳酸酯 /丙烯酸丁腈丁二烯苯乙烯合金，聚矽氧烷對苯二甲酸二 乙二醇酯/聚對苯二甲酸乙二醇酯共聚聚對苯二甲酸丁二 醇酯/聚碳酸酯合金，聚四氟乙烯，聚芳酯，聚醯胺/丙 烯酸丁腈丁二烯合金，變性環氧，變性聚芳酯，矽氧烷改 性聚醯胺醯亞胺等。又，作爲其形成法，有印刷法，噴墨 法，電子照相法等圖案印刷法，或薄膜張貼法，旋轉塗布 法形成有機絕緣材之後以光學過程或雷射等形成圖案的方 法，或組合此些的方法。 經濟部智慈財產局員工消費合作社印髮 其他，還有環氧樹脂，不飽聚酯樹脂，環氧異氰酸酯 樹脂，馬來酸醯亞胺樹脂，馬來酸醯亞胺環氧樹脂，氰酸 酯樹脂，氰酸酯環氧樹脂，氰酸酯馬來酸醯亞胺樹脂，酚 樹脂，鄰苯二甲酸二烯丙基酸樹脂，氨基甲酸酯樹脂，胼 樹脂，馬來酸醯亞胺醯胺樹脂等的各種熱硬化性樹脂，或 組合兩種以上上述樹脂的材料或調配無機塡充物等材料也 可以。又，在上述樹脂賦予感光性而藉由所定曝光顯像處 理，也可控制應力緩衝層的形狀。 又，作爲本發明的有機絕緣材，也可在層間使用不相 同的絕緣材料。如此地若在層間作成不相同的絕緣材料， 則可適材適所地選擇須低損失部分或須耐藥性部分的所需 部分的所需特性材料而可得到高性能化。又，隔著絕緣基 板而在兩面形成有機絕緣材時，則在面間使用不相同的絕 緣材料也可得到同樣之效果。 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） -18- 經濟部智慧財產局員工消費合作社印製 560017 __。 五、發明説明（4 本發明的感應器元件是所謂感應性電路元件就沒有加 以特別限制，例如使用平面地所形成的螺旋型，或重疊複 數個這些者，或是螺管型等。又，其電感爲10nH/ m m 2〜1 0 0 η H /m m 2者較適當。 又，感應器元件及金屬配線是同一材料或是不相同材 料均可以，而藉由導電性，及與周圍材料的黏接性，形成 法等適當被選擇。又，其形成方法也沒有加以特別限制者 。例如使用濺鍍法等來形成C u也可以，又考慮與周圍材 料之黏接性而在其界面形成T i，C r等也可以。又，以 濺鍍法等而以C u等形成作爲種膜的薄膜之後，再以電解 電鍍法等所形成也可以。又作爲配線及感應器元件的圖案 化法，可使用蝕刻法，剝離法等一般的配線圖案法。又， 使用含有A g等金屬的樹脂糊，而以印刷法等所形成也可 以。又，在上述無機介質的形成溫度較高時，可使用P t 等的耐氧化性，耐熱性較高的金屬。欲形成感應器時，若 對於感應器之配線寬，減小構成感應器的配線與配線之間 的距離，則可增加感應器中心部分的空間，可得到高效率 化，高性能化。 本發明的電阻元件是指以兩個金屬電極夾住電阻材料 的構造，作爲電阻材料爲一般使用作爲電阻器材料者並未 特別加以限制，例如使用C !· 一 S i，T i N等。其形成 法也並未特別加以限制，例如使用濺鍍法，電漿C V D法 等。又，若在最下層形成電阻元件，則燒結可用比絕緣材 的硬化溫度更高溫度之故，因而在提高製造良率，及低成 本紙張尺度適用中國國家標準（CNS ) Α4規格（210X297公釐） (請先閱讀背面之注意事項再填寫本頁)(However, R indicates that the substituent also has a good hydrocarbon skeleton, R1 indicates any of hydrogen, methyl, and ethyl; m is an integer of 1 to 4; η is an integer of 2 or more.) Also, the above The organic insulating material may have a function as a stress buffer material. Specifically, there are fluorine rubber, silicone rubber, and fluorinated silicone rubber. The size of this paper applies to China National Standard (CNS) A4 (210X297 mm) -17- 560017 A7 B7 V. Description of the invention (^ (please first Read the notes on the back and fill in this page) Acrylic rubber, hydrogenated acetonitrile rubber, ethylene propylene rubber, fluorosulfonated polystyrene, epoxy rubber, butyl rubber, hydrourethane rubber, polycarbonate / acrylonitrile nitrile Butadiene styrene alloy, polysiloxane diethylene terephthalate / polyethylene terephthalate copolymer polybutylene terephthalate / polycarbonate alloy, polytetrafluoroethylene , Polyarylate, polyamine / acrylonitrile butadiene alloy, denatured epoxy, modified polyarylate, siloxane modified polyamidamine, imine, etc. Also, as its formation method, there is a printing method, Pattern printing methods such as ink-jet method, electrophotographic method, or film-laminating method, spin coating method, and other methods of forming a pattern by optical process or laser after forming an organic insulating material, or a combination of these methods. Ministry of Economic Affairs, Intellectual Property Office Employee Consumer Cooperatives He also has epoxy resin, unsaturated polyester resin, epoxy isocyanate resin, maleimide imine resin, maleimide imide epoxy resin, cyanate resin, cyanate epoxy resin, cyanide Various thermosetting resins such as ester maleimide resins, phenol resins, diallyl phthalic acid resins, urethane resins, resins, maleimide resins, It is also possible to combine materials of two or more of the above-mentioned resins or to mix materials such as inorganic fillers. Furthermore, the above-mentioned resin can be given a photosensitivity and the shape of the stress buffer layer can be controlled by a predetermined exposure and development process. Also, as the present invention, The organic insulating material of the invention can also use different insulating materials between the layers. In this way, if different insulating materials are made between the layers, the appropriate material can be appropriately selected for the required portion of the part that requires low loss or the part that requires chemical resistance. High performance can be achieved with the required characteristic materials. When an organic insulating material is formed on both sides through an insulating substrate, the same effect can be obtained by using different insulating materials between the surfaces. Use Chinese National Standard (CNS) A4 specification (210X297 mm) -18- Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 560017 __. 5. Description of the invention Special restrictions are imposed, for example, a spiral type formed on a flat ground, or a plurality of these types, or a solenoid type, etc., and an inductance of 10 nH / mm 2 to 100 η H / mm 2 is more appropriate. In addition, the sensor element and the metal wiring may be the same material or different materials, and the conductivity and adhesion to surrounding materials, the formation method, and the like are appropriately selected. Moreover, the formation method is not particularly limited. Limiters. For example, Cu may be formed using a sputtering method or the like, and T i, C r or the like may be formed at the interface considering the adhesion with surrounding materials. Alternatively, a thin film as a seed film may be formed using Cu or the like by a sputtering method or the like, and then formed by an electrolytic plating method or the like. As a patterning method of the wiring and the sensor element, a general wiring pattern method such as an etching method or a peeling method can be used. Further, a resin paste containing a metal such as Ag may be used, and it may be formed by a printing method or the like. When the formation temperature of the inorganic medium is high, a metal having high oxidation resistance such as P t and high heat resistance can be used. When forming an inductor, if the wiring width of the inductor is reduced, and the distance between the wiring that constitutes the inductor and the wiring is reduced, the space at the center of the inductor can be increased, and high efficiency and high performance can be obtained. The resistive element of the present invention refers to a structure in which a resistive material is sandwiched between two metal electrodes. The resistive material is generally not particularly limited as a resistive material. For example, C! · Si, TiN, etc. are used. The formation method is not particularly limited, and for example, a sputtering method or a plasma C V D method is used. In addition, if a resistance element is formed in the lowermost layer, sintering can be performed at a higher temperature than the hardening temperature of the insulating material. Therefore, in order to improve the manufacturing yield and the low-cost paper size, the Chinese National Standard (CNS) A4 specification (210X297 mm ) (Please read the notes on the back before filling this page)

、?τ -19- 560017 ______ ΒΊ 五、發明説明（j 本化上有效。 (請先閲讀背面之注意事項再填寫本頁) 本發明的絕緣性基板爲不會降低各元件的效率的高絕 緣性材料者並未特別加以限制。又，本發明的玻璃基板爲 不會降低各元件的效率的高絕緣性的玻璃基板就沒有特別 加以限制，而考慮強度，加工性等被選擇。尤其是含有從 Sc, Y, La, Pr, Nd, Pm, Sm, Eu, Gd ，Tb， Dy, Ho, Er, Tm， Yb, Lu的群所選 擇的至少一種稀土類元素較理想。又，稀土類元素爲換算 L η 2 ◦ 3 ( L η爲稀土類元素）的氧化物，對於整體玻璃 含有0 _ 5至20重量％，作爲其他成分含有S i〇2: 40至80重量％， B2〇3:〇至20重量％， R2〇（ R爲鹼金屬）：0至2 0重量％，R0 (R爲鹼土類金屬 ):0至20重量％，人12〇3:0至17重量％，且 R 2〇+ R〇·· 1 〇至3 0重量％較理想。如此，玻璃基板 的強度大幅度地提高而加工性也特別地形成良好。 本發明的貫通孔是其形狀爲兩個開孔直徑R 1，R 2 (R 1 ^ R 2 )與玻璃基板的厚度t的關係爲： 經濟部智慧財產局員工消費合作社印紫 70^ tan'1(t/(Rl-R2))^ 80 較理想，開孔的直徑R 1，R 2及基板上的配置狀況，基 板的厚度是隨著安裝或積體的元件及配線的大小而可適當 地選擇。 又，其形成法是在玻璃基板不會賦予較大物理式或化 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） -20- 560017 A7 _________ B7 五、發明説明（4 (請先閲讀背面之注意事項再填寫本頁) 學式損傷者並未特別加以限制。可使用既知的開孔技術。 例如有微噴砂法，化學蝕刻法，雷射加工法，使用感光性 玻璃的感光處理法等。使用任何方法，如上述地均不會給 與開口部或貫通孔內部的碎屑狀態或裂痕等的物理式或化 學式損傷的方法上很重要。 又，在上述貫通孔形成法發生碎屑狀態或裂痕等物理 式或化學式損傷時，藉由修復該狀況也可使用作爲基板。 例如有蝕刻以氟酸等發生碎屑狀態或裂痕的玻璃表面俾除 去損傷的方法，或以玻璃的溶凝膠液塡補裂痕的方法，或 在坡璃基板材料的軟化點近旁進行加熱處理的方法等。當 然可除去或封閉損傷部分的方法，則並未特別加以限制。 經濟部智慈財產局員工消費合作社印製 又，形成在設於本發明的絕緣性基板的貫通孔內部的 導體部，是若可電氣式地導通位於絕緣性基板的主面側及 副主面側的金屬配線或元件，則並未特別加以限制，例如 以導電性物質及核形成物質及玻璃所構成的導電性物質所 形成也可以。又，若可電氣式地連接位在玻璃兩側的電路 部者並未特別加以限制，藉由導電性，及與周圍的材料的 黏接性，形成法等被適當地選擇。又，其形成方法也並未 特別加以限制者。例如使用濺鍍法，在貫通孔的壁面形成 C u等的導體層也可以；考慮與周圍材料的黏接性而在其 界面形成T i，C r等也可以。又應用濺鍍法以C u等形 成作爲種膜的薄膜之後，以電解電鍍法等所形成也可以。 又使用無電解電鍍法也可以。又，在貫通孔內部塡補含有 A g等金屬的樹脂糊也可以。 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） -21 - 560017 A7 B7 五、發明説明（^ (請先閱讀背面之注意事項再填寫本頁) 設在本發明的電極端部以外的部分的連接部，是與其 上部的金屬配線部電氣式地導通，則並未特別加以限制， 在覆蓋電極的有機絕緣材以蝕刻法進行開設貫通孔後，在 電鍍等而與上部金屬配線層一起形成也可以。又作爲貫穿 孔的形成法，則在有機絕緣材使用感光性聚醯亞胺或 B C B等的感光性有機絕緣材而以光罩法所形成也可以。 本發明的各元件的配置是並未特別加以限制，惟依各 元件的耦合件所產生的寄生電容的發生的性能，及所求得 到的半導體連接基板的大小，因而隨著其積體部，而必須 適當地設計各元件的配置。 例如若爲並不需要成爲小型化的半導體連接裝置，各 元件是須排在同一面上或是增加各層間的距離俾減小各元 件間的影響。設置設置面亦即設在接地層也是一種方法。 又，欲求得更小型化，則在基板兩面形成各元件就可 提高積體度，可形成更小型化。 又，爲了作成小型化，由於在多數面上形成各元件， 而可作成累層構造，因而可成爲更小型化。 經濟部智慧財產局員工消費合作社印製 又，夾住玻璃基板而分別配設各元件，而在製作上的 處理成爲簡便，可得到低成本的半導體連接基板。又採取 較大各元件的距離；能防止增加耦合件所產生的寄生電容 〇 在本發明的半導體連接基板，並未特別作爲與外部的 電氣式連接所用的外部電極須形成在金屬端子部上，若需 要則可以形成。外部電極是裝載依本發明的半導體連接基 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） -22- 560017 A7 B7 五、發明説明（2¾ (請先閱讀背面之注意事項再填寫本頁) 板的基板及與半導體元件電氣式地連接所用的導電體；具 體而言例如使用含有錫，鋅，鉛的焊接合金，銀，銅或金 ，或以金覆蓋此些並球狀地形成者。此外，均可使用組合 鉬，鎳，銅，鉑，鈦等一種或組合兩種以上的合金或是作 成二以上的多重膜的構造的端子也可以。又其形成法可使 用將球上電極使用作爲光罩等使之轉印的方法，圖案印刷 的方法等習知不知的所有方法 (實施發明所用的最佳形態） 以下，依實施例更詳述本發明。又，在用以說明本發 明的一實施例的半導體連接基板的剖視圖。在第1圖中， 1是玻璃基板（日本電氣玻璃，BLC)，其厚度爲 0 . 5 m m 〇 在第1圖中，2是有機絕緣材，使用感光性聚醯亞胺 (日立化成，HD — 60 0 0) 經濟部智慈財產局8工消費合作社印製 構成在有機絕緣材2內部的電容器元件3，是均由下 層電極3 a，介質材料3 3 b，上部電極3 c所構成的三 層構造。下部電極3 a是以C u所構成；介質材料3 b是 以T a的氧化物所構成；上部電極3 c是以C u所構成。 感應器元件4是螺旋型感應器；形成在與上述電容器 元件3的下部電極3 a相同面，而其材料是Cu。 電阻元件5是由電阻體5b與電極5 a, 5 c所構成 。電阻器5b是Ta與Ti的化合物，而電極5a， 5c 是由C u所構成。 本紙張尺度適用中國國家標準（CNS) A4規格（210X 297公釐1 ~ -23- 經濟部智慧財產局員工消費合作社印製 560017 A7 B7 五、發明説明（2：| 在第1圖中，6是使用於與印刷基板等安裝基板連接 的金屬端子，而在本圖之情形爲在金屬端子部6上面裝載 焊球7。又，8爲使用於與半導體元件連接的金屬端子部 〇 以下，說明有關於第1圖的半導體連接基板之製造方 法。 在厚度0 · 5 m m的玻璃基板，以濺鍍法將c r成膜 成5 0 n m，之後再將C u成膜成5 0 0 n m，將該膜作 爲鍍銅供電用種膜。在該C u膜上旋轉塗布負型液狀光阻 劑PMER — N— CA1 000 (東京應化所製），以熱 板預烘之後，經曝光，顯像過程而形成光阻罩。在該光阻 開口部以1 A / d m的電流密度進行1 0 // m鍍銅。之後 除去光阻罩，再以銅蝕刻液可布拉蝕刻（荏原電產所製） 來除去銅種膜。又使用過錳酸系C r蝕刻液除去C r種膜 以形成下部電極。 然後，作爲障壁膜藉由濺鍍法形成5 0 n m C r。 之後，在上述下部電極上藉由濺鍍法將T a 2〇5成膜 成厚度5 0 0 nm。在該T a 2〇5上塗布正型液狀光阻劑 〇F P R 8 0 0，5 0 0 c p (東京應化所製），經乾燥 ，曝光，顯像過程以形成介電材料的光阻罩。然後使用 C F 4，進行乾蝕刻除去不用部分之後，除去光阻罩，再以 過錳酸系C I·蝕刻液蝕刻不用部分的障壁層以形成介質材 料。 然後，藉由旋轉塗布來塗布感光性聚醯亞胺 本紙張尺度適用中國國家標準（CNS ) A4規格（210乂297公^1 ~ " -24- (請先閲讀背面之注意事項再填寫本頁)、? Τ -19- 560017 ______ ΒΊ 5. Description of the invention (j is effective in nature. (Please read the precautions on the back before filling this page) The insulating substrate of the present invention is a high insulation that will not reduce the efficiency of each component. The material of the material is not particularly limited. In addition, the glass substrate of the present invention is not particularly limited as it is a highly insulating glass substrate that does not reduce the efficiency of each element, and is selected in consideration of strength, processability, and the like. In particular, it contains At least one rare earth element selected from the group of Sc, Y, La, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu is preferred. Also, rare earth elements To convert the oxide of L η 2 ◦ 3 (L η is a rare earth element), the whole glass contains 0-5 to 20% by weight, and the other components include Si02: 40 to 80% by weight, and B203: 0 to 20% by weight, R2O (R is an alkali metal): 0 to 20% by weight, R0 (R is an alkaline earth metal): 0 to 20% by weight, human 1230: 0 to 17% by weight, and R 20+ R〇 ·· 10 to 30% by weight is preferable. In this way, the strength of the glass substrate is greatly improved, and the workability is also improved. The formation of the through-holes of the present invention is that the shape of the through-holes is two opening diameters R 1, R 2 (R 1 ^ R 2) and the thickness t of the glass substrate: Purple 70 ^ tan'1 (t / (Rl-R2)) ^ 80 is more ideal. The diameters of the openings R 1, R 2 and the arrangement on the substrate, and the thickness of the substrate depends on the components or wiring installed or integrated. The size can be selected appropriately. In addition, it is formed by not giving a larger physical formula on the glass substrate or reducing the paper size to the Chinese National Standard (CNS) A4 specification (210X297 mm) -20- 560017 A7 _________ B7 V. Description of the invention (4 (Please read the precautions on the back before filling in this page) There are no special restrictions on the damage to the academic type. Known hole-opening techniques can be used. For example, micro-blasting, chemical etching, and laser processing Method, a photosensitive treatment method using a photosensitive glass, etc. It is important to use any method, such as the method described above, that does not give physical or chemical damage to the chip state or cracks in the opening or the through hole. In the above-mentioned through hole formation method In the case of physical or chemical damage such as chipping or cracking, it can also be used as a substrate by repairing the condition. For example, there is a method of removing the damage by etching the glass surface where chipping or cracking occurs with fluoric acid, or glass The method of repairing cracks by the sol gel solution, or the method of heat treatment near the softening point of the slope glass substrate material. Of course, the method of removing or sealing the damaged part is not particularly limited. Intellectual Property of the Ministry of Economic Affairs It is printed by the bureau employee consumer cooperative, and the conductor portion formed inside the through-hole provided in the insulating substrate of the present invention is electrically connected to the metal wiring on the main surface side and the sub-main surface side of the insulating substrate, or The element is not particularly limited, and may be formed of, for example, a conductive substance, a core-forming substance, and a conductive substance made of glass. It is not particularly limited as long as the circuit parts which are located on both sides of the glass can be electrically connected. The conductivity and the adhesion to surrounding materials, the formation method, etc. are appropriately selected. The method of formation is not particularly limited. For example, a sputtering method may be used to form a conductor layer such as Cu on the wall surface of the through hole, and Ti, Cr, etc. may be formed at the interface in consideration of the adhesion with surrounding materials. Alternatively, a thin film as a seed film may be formed using Cu or the like by a sputtering method, and then may be formed by an electrolytic plating method or the like. Alternatively, electroless plating may be used. Alternatively, a resin paste containing a metal such as Ag may be added inside the through hole. This paper size applies Chinese National Standard (CNS) A4 specification (210X297mm) -21-560017 A7 B7 V. Description of the invention (^ (Please read the precautions on the back before filling this page) Set on the electrode end of the invention The connection parts of the other parts are electrically connected to the metal wiring part on the upper part, which is not particularly limited. The organic insulating material covering the electrode is opened with a through hole by etching, and then is connected to the upper metal wire by plating or the like. The layers may be formed together. As a method of forming the through holes, the organic insulating material may be formed by a photomask method using a photosensitive organic insulating material such as photosensitive polyimide or BCB. Each element of the present invention The configuration is not particularly limited, but it depends on the performance of the parasitic capacitance generated by the coupling of each element and the size of the semiconductor connection substrate to be obtained. Therefore, it must be appropriately designed with its integrated part. Arrangement of each component. For example, if it is not necessary to become a miniaturized semiconductor connection device, each component must be arranged on the same surface or the distance between layers must be increased. It is also a method to reduce the influence between each element. It is also a method to set the installation surface, that is, the ground layer. Also, if you want to reduce the size, you can increase the integration degree by forming each element on both sides of the substrate, and it can be more compact. In order to achieve miniaturization, each element can be formed on most surfaces, and it can be made into a layered structure, so it can be further miniaturized. Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs, the glass substrates are arranged and each is arranged separately. Components, and the manufacturing process becomes simple, and a low-cost semiconductor connection substrate can be obtained. A larger distance between each component is adopted; parasitic capacitance generated by the coupling member can be prevented from increasing. In the semiconductor connection substrate of the present invention, The external electrodes used as electrical connections with the outside must be formed on the metal terminals, if necessary. The external electrodes are loaded with the semiconductor paper according to the present invention. The basic paper size is applicable to the Chinese National Standard (CNS) A4 specification (210X297). Mm) -22- 560017 A7 B7 V. Description of the invention (2¾ (Please read the notes on the back before filling this page) The substrate of the board and the conductor for electrically connecting the semiconductor element; specifically, for example, a solder alloy containing tin, zinc, and lead, silver, copper, or gold, or those covered with gold and formed spherically is used. In addition, it is also possible to use a terminal composed of a combination of molybdenum, nickel, copper, platinum, titanium, or two or more types of alloys, or a combination of two or more films. The formation method can also use an electrode on a ball. As a method of transferring a photomask or the like, a method of pattern printing, and other known methods (the best mode for carrying out the invention), the present invention will be described in more detail with reference to the following examples. A cross-sectional view of a semiconductor connection substrate according to an embodiment. In FIG. 1, 1 is a glass substrate (Japan Electric Glass, BLC), and its thickness is 0.5 mm. 〇 In FIG. 1, 2 is an organic insulating material. Photosensitive polyimide (Hitachi Kasei, HD — 60 0 0) The capacitor element 3 printed in the organic insulating material 2 is printed by the 8th Industrial Cooperative Cooperative of the Intellectual Property Office of the Ministry of Economic Affairs. It is composed of a lower electrode 3a and a dielectric material. 3 3 b Three-layer structure of the upper electrode composed of 3 c. The lower electrode 3a is made of Cu; the dielectric material 3b is made of Ta oxide; the upper electrode 3c is made of Cu. The inductor element 4 is a spiral type inductor; it is formed on the same surface as the lower electrode 3a of the capacitor element 3 described above, and its material is Cu. The resistance element 5 is composed of a resistor 5b and electrodes 5a, 5c. The resistor 5b is a compound of Ta and Ti, and the electrodes 5a, 5c are made of Cu. This paper size applies to China National Standard (CNS) A4 specifications (210X 297 mm 1 ~ -23- Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 560017 A7 B7 V. Description of the invention (2: | In Figure 1, 6 It is a metal terminal used for connection to a mounting substrate such as a printed circuit board. In the case of this figure, a solder ball 7 is mounted on the metal terminal portion 6. In addition, 8 is a metal terminal portion used to connect to a semiconductor element. The method for manufacturing the semiconductor connection substrate shown in Fig. 1. On a glass substrate having a thickness of 0.5 mm, a film of cr was formed into 50 nm by sputtering, and then a film of Cu was formed into 50 nm. The film is used as a seed film for copper-plated power supply. A negative liquid photoresist PMER — N — CA1 000 (made by Tokyo Chemical Industry Co., Ltd.) is spin-coated on the Cu film, pre-baked with a hot plate, and exposed to light. A photoresist mask is formed during the image process. Copper is plated with 1 0 // m at a current density of 1 A / dm at the opening of the photoresist. After that, the photoresist mask is removed and then etched with copper etchant Cobra (Ebara Denso) Produced) to remove the copper seed film. Then use a permanganic acid C r etching solution to remove C r A film was formed to form a lower electrode. Then, 50 nm Cr was formed as a barrier film by a sputtering method. Thereafter, T a 205 was formed into a thickness of 500 nm by a sputtering method on the lower electrode. A positive liquid photoresist 〇FPR 80,500 cp (manufactured by Tokyo Chemical Industry Co., Ltd.) was coated on the T a 205, and dried, exposed, and developed to form a photoresist of a dielectric material. Then use CF 4 to dry etch to remove the unused part, then remove the photoresist mask, and then etch the unused part of the barrier layer with a permanganic acid-based CI · etching solution to form a dielectric material. Then, apply the photosensitive by spin coating. Polyimide This paper is sized for Chinese National Standard (CNS) A4 (210 乂 297mm ^ 1 ~ " -24- (Please read the precautions on the back before filling this page)

560017 A7 __B7_ 五、發明説明（ (請先閲讀背面之注意事項再填寫本頁) H D 6 0 0 (日立化成所製），以熱板預烘之後，經曝光 ，顯像過程，露出下部電極上的介質。這時候，將聚醯亞 胺的被覆部切斷作爲半導體連接基板而用以個片化所使用 的劃片區域相比較開口成位在8 0 // m內側的該聚醯亞胺 在氮氣環境中進行2 5 0 °C /兩小時硬化，俾形成1 0 // m的有機絕緣材。 之後，藉由濺鍍法形成5 0 0 n m T a N膜。在其 上面旋轉塗布正型液狀光阻劑〇F P R 8 0 0，1 0 0 c p並預烘之後，經曝光，顯像以形成光阻圖案罩。使用 該光罩施以C F 4乾鈾刻T a N膜。之後剝離光阻劑以形成 複數電阻元件。 經濟部智慧財產局員工消費合作社印製 然後，使用濺鍍法成膜5 0 n m C ι*，再成膜 5 0 0 n m C u，將此作爲種膜。在該C u膜上旋轉塗 布負型液狀光阻劑PMER - N—CA 1 〇 〇 〇 (東京應 化所製），以熱板進行預烘之後，經曝光，顯像過程俾形 成光阻罩。以1 A / d m的電流密度在該光阻開口部進行 1 0 // m鍍銅。然後除去光阻罩，以銅鈾刻液可布拉蝕刻 (荏原電產所製）除去銅種膜。又使用過錳酸系C r蝕刻 液除去C r種膜，俾形成上部電極及電阻器電極及感應器 元件。 在形成有該上部電極及電阻器電極及感應器元件的面 旋轉塗布感光性聚醯亞胺H D 6 0 0 0 ( H D M S所製） 進行預烘之後，經曝光，顯像形成層間連接所用的開口部 。這時候，開口成聚醯亞胺的被覆部切斷作爲半導體連接 本紙張尺度適用中國國家標準（CNS ) Α4規格（210X297公釐） -25- 560017 A7 B7 五、發明説明（2¾ 基板而用以個片化所使用的劃片區域相比較位在8 0 // m 內側。又，進行2 5 0 t / 1 h I*硬化俾形成有機絕緣材 (請先閱讀背面之注意事項再填寫本頁) 〇 爲了在該有機絕緣材表面形成金屬端子部而成膜電鍍 用種膜Cr :5〇nm, Cu:500nm。在該Cu膜 上施以旋轉塗布負型液狀光阻材Ρ Μ E R - N -C A 1 〇 〇 〇 (東京應化製）並進行預烘之後，經曝光， 顯像以形成電鍍光阻罩之後，藉由鍍銅形成1 0 // m的鍍 膜後，作爲障壁層再形成2 // m的鍍鎳膜。最後，剝離光 阻劑，剝離電鍍種膜，俾形成配線及金屬端子部。 在形成有該金屬端子部的面旋轉塗布感光性聚醯亞胺 H D 6 0 0 0 ( H D M S所製），施以預烘後，經曝光， 顯像，形成用以形成焊球的開口部。這時候，開口成聚醯 亞胺的被覆部切斷作爲半導體連接基板而用以個片化所使 用的劃片區域相比較位在8 0 // m內側。又，進行2 5 0 °C / 1 h r硬化，俾形成有機絕緣材。 經濟部智慧財產局員工消費合作社印製 在上述金屬端子部表面施以無電解鍍金處理之後，藉 金屬罩將焊劑塗布在所定部分之後，排列直徑2 0 0 // m 的自由鉛焊球，藉由迴銲處理俾形成外部電極。 最後使用切割裝置成爲個片化俾製作半導體連接基板 〇 如此地，將習知以單體零件裝載的感應器，電容器， 電阻等的受動元件積體化在基板上，即可將安裝面積成爲 一半，可成爲更小型。又，在基板使用高絕緣性的玻璃， 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） -26- 560017 A7 ___ B7 五、發明説明（2义 (請先閱讀背面之注意事項再填寫本頁) 即可防止降低各元件的效率，與使用習知的矽基板者相比 較，可得到大約5倍的效率。又，以使用矽基板者之一半 成可加以製造。 又，藉由比玻璃基板的端部將電容器，感應器，電阻 等受動元件形成在內側，在切斷半導體連接基板時或安裝 半導體連接基板時使得施加有集中式應力的構成部分能耐 於其應力，而可大幅度地減低隨著施加應力所產生的發生 半導體連接基板之損壞，可得到高可靠性，又製造良率優 異的半導體連接基板。 又，第1圖是本發明的一實施例，各元件的配置是並 不被限制於此者。 (實施例2 ) 作爲實施例2，使用以下的玻璃基板，代替在實施例 1所使用的第1圖的玻璃基板1。本實施例的玻璃基板的 組成，是將從 S c，Y，L a，P r，N d，P m，S m ，Eu，Gd，Tb，Dy，Ho，Er，Tm，Yb， 經濟部智慧財產局8工消費合作社印製 L u的群所選擇的至少一種稀土類元素以L n 2〇3 ( L n 是稀土類元素）的氧化物，對於整體玻璃含有〇 . 5至 20重量％，作爲其他成分含有s i〇2 : 40至80重量 %，B2〇3: 〇至20重量％, R2〇（R是鹼金屬）： 〇至20重量％, A12〇3·· 〇至17重量％，且含有 R2〇 + R〇·· 10至30重量％。又，其厚度是與實施例 1 同樣 0 . 5 m m。 本紙張尺度適用中國國家標準（CMS ) A4規格（210X297公釐） 一 -27- 560017 A7 ___B7_ 五、發明説明（^ 又，在本實施例中，玻璃基板1以外的部分是與實施 例1同樣。 (請先閱讀背面之注意事項再填寫本頁) 又，本實施例的半導體連接基板之製造方法，是與實 施例1同樣。 在實施例1所使用的玻璃基板（日本電氣玻璃， B L C )與在實施例2所使用的玻璃基板的抗折強度分別 爲2〇〇MPa， 300MPa。抗折強度是在彎曲4點 所測定的數値。樣品的形狀是1 0 m m X 3 6 m m X 0 . 5 m m。由此可知在實施例2所使用的玻璃基板是具有在實 施例1所使用的玻璃基板的大約兩倍強度。 因此，實施例2的半導體連接基板是成爲耐衝擊性等 的可靠性更高者。 如此地，使用本實施例的玻璃基板，除了依實施例1 的效果，可得到更高可靠性的半導體連接基板。 (實施例3 ) 經濟部智慧財產局員工消費合作社印製 在實施例3作爲有機絕緣材2，使用B C B (賽可樂 天4 0 2 6，陶化學所製）來代替在實施例1所使用的感 光性聚醯亞胺。在本實施例中，有機絕緣材2以外是與實 施例1同樣。 又，本實施例的半導體連接基板之製造方法是與實施 例1同樣。 BCB的介質常數爲2 · 65，介質分離率爲 0 · 0 0 3 ;與感光性聚醯亞胺3 . 5，0 . 0 1相比較 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） -28- 560017 A7 _B7 五、發明説明（4 更小。 (請先閱讀背面之注意事項再填寫本頁) 因此，使用B C B在覆蓋電子電路的周圍的絕緣層， 即可使導體損失及介質損失變小，而有減低通過電子電路 的信號損失。 如此地，在本發明的有機絕緣材使用B C B，即可減 小電路的導體損失及介質損失，除了依實施例1的效果之 外，還可得到信號的通過損失較小的半導體連接基板。 又，在玻璃基板使用在實施例2所使用的玻璃，當然 使半導體連接基板的耐衝擊性等的可靠性成爲較高者。 (實施例4 ) 在實施例4，使用含有以上述一般式（化1 )所表示 的複數苯乙烯基的交聯成分，又含有重量平均分子量 5 0 0 0以上的高分子量體的低介質分離率樹脂組成物。 在本實施例中除了有機絕緣材2之外是與實施例1同樣。 經濟部智慧財產局員工消費合作社印製 又，本實施例的半導體連接基板之製造方法，是除了 下述的上述低介質分離率樹脂組成物的形成法之外，與實 施例1同樣。 上述低介質分離率樹脂組成物的形成是如下地進行。 將合成的3 0重量部1，2 -雙（乙烯基苯基）乙烷與 了 0重量部環狀聚烯烴Zeonex 480 (日本是恩所製）， 0 . 3重量部硬化1催化劑全乙炔2 5 B的三種原料溶解 在二甲苯溶媒中使固形分成爲3 8%，俾製作淸漆。 藉由旋轉塗布進行塗布該淸漆，在熱板上1 2 0t/ 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） -29- 560017 kl B7_ 五、發明説明（ (請先閱讀背面之注意事項再填寫本頁} 2分之後進行2 0 0 °C / 5分的步進硬化，形成1 0 // m 的絕緣體。在該上面旋轉塗布正型液狀光阻劑 〇F P R 8 0 0，5 0 0 c p，進行乾燥之後，經曝光， 顯像過程，形成使得開口端部開口成爲比下部電極端部位 於2 0 // m內側的光阻罩。之後，以c F 4乾蝕刻上述低介 質分離率樹脂組成物，露出下部電極上的介質。最後，剝 離光阻劑。 低介質分離率樹脂組成物的介質常數是2 . 4 5，介 質分離率是〇 . 〇 〇 1 5，小於感光性聚醯亞胺的3 · 5 ，0.002。又也小於306的2_65，0.003 〇 又，價格爲兩萬日元/kg，與BCB的2 3萬日元 / k g相比較，爲大約1 / 1 0。 因此在覆蓋電子電路周圍的絕緣層使用上述低介質分 離率樹脂組成物，即可減小導體損失及介電損失，而可低 成本地減低通過電子電路的訊號損失。 經濟部智慧財產局員工消費合作社印製 又，在玻璃基板使用在實施例2所使用的玻璃，當然 成爲可更提高半導體連接基板的耐衝擊性等的可靠性者。 (實施例5 ) 第2圖是表示本發明的一實施例的半導體連接基板的 剖視圖。在第2圖中，1係玻璃基板（日本電氣玻璃， BLC)，其厚度是〇 . 5mm。 在第2圖中，2是有機絕緣材，使用感光性聚醯亞胺 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公瘦) -30- 560017 A7 B7 五、發明説明（2¾ (曰立化成，HD—6000)。 (請先閲讀背面之注意事項再填寫本頁) 構成在有機絕緣材2的內部的電容器元件，是由C u 所構成的下部電極3 a，由T a的氧化物所構成的介質材 料3 b，由C u所構成的上部電極3 c所成的三層構造的 電容器元件3，及由CU所構成的下部電極3 / a，由聚 醯亞胺所構成的介質材料3 — b，由C u所構成的上部電 極3 / c所成的三層構造的電容器元件3 /所構成。 感應器元件4是螺旋型感應器，其材料是Cu。 電阻元件5是由電阻器5b與電極5 a, 5 c所構成 電阻器5b是Ta與Ti的化合物，而電極5a, 5c是 由C u所構成。 在第2圖中，6是使用於與印刷基板等安裝基板連接 的金屬端子部。 以下，對於第2圖的半導體連接基板，說明其製造方 法。 經濟部智慈財產局員工消費合作社印製 在0 · 5 m m厚度的玻璃基板以濺鍍法成膜5 0 n m C r，又成膜5 0 0 n m C u，將此作爲鍍銅給電用種 膜。在該C u膜上旋轉塗布負型液狀光阻劑Ρ Μ E R - N 一CA1〇〇〇 (東京應化所製），在熱板上施以預烘之 後，經曝光，顯像過程俾形成光阻罩。在該光阻開口部以 1 A / d m的電流密度來進行1 0 // m鍍銅。之後除去光 阻罩，以銅鈾刻液可布拉蝕刻（荏原電產所製）來除去銅 種膜。又，使用過錳酸系C r蝕刻液來除去C r種膜，俾 形成下部電極。 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） " -31 - 經濟部智慧財產局員工消費合作社印製 560017 A7 B7 五、發明説明（d 然後，作爲障壁膜，藉由濺鍍法形成5 〇 n m C r ο 之後，在上述下部電極3 a上藉由濺鍍法將T a 2〇5 成膜成爲5 0 0 nm厚度。在該T a 2〇5上塗布正型液狀 光阻劑〇FPR800， 500cp(東京應化所製）， 經乾燥，曝光，顯像過程，以形成介質材料的光阻罩。之 後，使用C F 4進行乾蝕刻，除去不用部分之後，除去光阻 罩，又以過猛酸系C r触刻液触刻不用部分的障壁層以形 成介質材料。 然後，藉由旋轉塗布感光性聚醯亞胺HD6000( 曰立化成所製），在熱板預烘之後，經曝光，顯像過程露 出下部電極3 a上的介質材料。這時候，聚醯亞胺的被覆 部開口成切斷作爲半導體連接基板而用以個片化所使用的 劃片區域相比較位在8 0 // m內側。在氮氣環境中以 2 5 0 °C / 2 h r硬化該聚醯亞胺，以形成1 〇 // m的有 機絕緣材。在該過程所形成的下部電極3 > a上的有機絕 緣材是成爲介質材料3 > b。 然後，藉由濺鍍法形成5 0 0 n m T a N膜。在該 上面旋轉正型液狀光阻劑OFPR800， lOOcp, 進行預烘之後，經曝光，顯像以形成光阻圖案罩。使用該 罩進行C F 4乾蝕刻T a N膜。之後，剝離、光阻劑以形成複 數電阻元件。 之後，使用濺鍍法成膜5 0 n m C r，又成膜 5 0 0 n m C u，將此作爲種膜。在該C u膜上旋轉塗 本紙張尺度適用中國國家標準（CNS ) A4規格（2〗0X297公釐） (請先閲讀背面之注意事項再填寫本頁)560017 A7 __B7_ V. Description of the invention ((Please read the precautions on the back before filling in this page) HD 6 0 0 (made by Hitachi Chemical Co., Ltd.), pre-baked with hot plate, exposed, and developed, exposing the lower electrode At this time, the coated part of polyimide is cut off as a semiconductor connection substrate, and the scribe area used for singulation is opened compared to the polyimide which is positioned inside 8 0 // m It was hardened at 250 ° C / two hours in a nitrogen atmosphere to form a 10 // m organic insulating material. After that, a 500 nm T a N film was formed by a sputtering method. A positive coating was spin-coated on the top. Type liquid photoresist 〇FPR 8 0, 1 0 0 cp and pre-bake, after exposure, developed to form a photoresist pattern mask. Use this mask to apply CF 4 dry uranium to etch T a N film. After The photoresist is peeled off to form a plurality of resistive elements. It is printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs, and then formed into a film of 50 nm Cm * by sputtering, which is then used as a seed film. A negative liquid photoresist PMER-N-CA 1 000 (the Tokyo Institute of Chemical Technology) was spin-coated on the Cu film. ), After pre-baking with a hot plate, and after exposure, the photoresist mask is formed during the development process. 1 0 // m copper plating is performed on the photoresist opening at a current density of 1 A / dm. Then the photoresist mask is removed The copper seed film was removed by copper uranium etching solution Cobra etching (manufactured by Ebara Densen Co., Ltd.). The permanganic acid C r etching solution was used to remove the C r seed film to form the upper electrode, resistor electrode, and sensor element. A photosensitive polyimide HD 6 0 0 0 (manufactured by HDMS) is spin-coated on the surface on which the upper electrode, the resistor electrode and the sensor element are formed, and after pre-baking, it is exposed to develop an interlayer connection for development. The opening part. At this time, the covering part that opens into polyimide is cut off as a semiconductor connection. The paper size applies the Chinese National Standard (CNS) A4 specification (210X297 mm) -25- 560017 A7 B7 5. Description of the invention (2¾ substrate The dicing area used for slicing is located on the inside of 8 0 // m. Also, I * hardened for 2 50 t / 1 h to form an organic insulating material (please read the precautions on the back first) (Fill in this page) 〇 In order to the surface of the organic insulating material Cr: 50 nm, Cu: 500 nm, and a seed film for electroplating formed by forming a metal terminal portion. A spin-coated negative liquid photoresist material PM ER-N-CA 1 000 (Tokyo Should be pre-baked, exposed, developed to form a plated photoresist mask, and then copper plating is used to form a 10 / m film, and then a barrier layer is formed into a 2 / m film. . Finally, the photoresist is peeled off, the plating seed film is peeled off, and wiring and metal terminal portions are formed. A photosensitive polyimide H D 6 0 0 0 (manufactured by H D M S) was spin-coated on the surface on which the metal terminal portion was formed, and after prebaking, it was exposed and developed to form an opening portion for forming a solder ball. At this time, the coating portion opened into polyfluorene imine is cut off as a semiconductor connection substrate and the dicing area used for the singulation is located inside 8 0 // m. In addition, it was cured at 250 ° C / 1 h r to form an organic insulating material. The consumer cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs printed the surface of the above metal terminals after electroless gold plating, and then applied a flux to a predetermined portion by a metal cover, and arranged free lead solder balls with a diameter of 2 0 // // m. An external electrode is formed by the reflow process. Finally, the cutting device is used to form a single chip. A semiconductor connection substrate is manufactured. In this way, the conventionally mounted passive components such as inductors, capacitors, and resistors are integrated on the substrate, and the mounting area can be halved. Can become smaller. In addition, high-insulation glass is used for the substrate, and the paper size is in accordance with Chinese National Standard (CNS) A4 (210X297 mm) -26- 560017 A7 ___ B7 V. Description of the invention (2 meanings (please read the precautions on the back first) Fill out this page again) to prevent the efficiency of each component from being lowered, and to obtain about 5 times the efficiency compared to those using conventional silicon substrates. One half of those using silicon substrates can be manufactured. The driven elements such as capacitors, inductors, and resistors are formed on the inner side than the end of the glass substrate. When the semiconductor connection substrate is cut or the semiconductor connection substrate is mounted, the component subjected to concentrated stress can withstand the stress, and can be large. It greatly reduces the occurrence of damage to the semiconductor connection substrate caused by the applied stress, and can obtain a semiconductor connection substrate with high reliability and excellent manufacturing yield. Also, FIG. 1 is an embodiment of the present invention, and the arrangement of each element (Example 2) As Example 2, the following glass substrate was used instead of the glass of FIG. 1 used in Example 1. Substrate 1. The composition of the glass substrate of this embodiment is from Sc, Y, La, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb. The at least one rare earth element selected by the Group of Industrial and Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs and the printed group of Lu is an oxide of L n 2 03 (L n is a rare earth element), and the whole glass contains 0.5 to 5 20% by weight, containing SiO2 as other ingredients: 40 to 80% by weight, B203: 〇 to 20% by weight, R2〇 (R is an alkali metal): 〇 to 20% by weight, A12〇3 ·· 〇 to 17% by weight and contains R2O + R0 ·· 10 to 30% by weight. Also, its thickness is 0.5 mm as in Example 1. This paper size applies the Chinese National Standard (CMS) A4 specification (210X297 mm) ） 一 -27- 560017 A7 ___B7_ 5. Explanation of the invention (^ Also, in this example, the parts other than the glass substrate 1 are the same as in Example 1. (Please read the precautions on the back before filling this page). The manufacturing method of the semiconductor connection substrate of this embodiment is the same as that of Embodiment 1. The glass substrate (Nippon Denki) used in Embodiment 1 The flexural strength of glass (BLC) and the glass substrate used in Example 2 were 2000 MPa and 300 MPa, respectively. The flexural strength was measured at four points of bending. The shape of the sample was 10 mm X 3 6 mm X 0.5 mm. From this, it can be seen that the glass substrate used in Example 2 has approximately twice the strength of the glass substrate used in Example 1. Therefore, the semiconductor connection substrate of Example 2 is impact resistant. Those with higher reliability. In this way, using the glass substrate of this embodiment, in addition to the effects of Embodiment 1, a more reliable semiconductor connection substrate can be obtained. (Example 3) The consumer cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs printed the organic insulating material 2 in Example 3, and used BCB (Secco Rakuten 4 0 26, manufactured by Tao Chemicals) instead of the one used in Example 1. Photosensitive polyfluorene. Except for the organic insulating material 2 in this embodiment, it is the same as in the first embodiment. The manufacturing method of the semiconductor connection substrate of this embodiment is the same as that of the first embodiment. BCB has a dielectric constant of 2.65 and a media separation rate of 0. 0 0 3; compared with photosensitive polyimide 3.5, 0. 01, this paper size applies the Chinese National Standard (CNS) A4 specification (210X297 (Mm) -28- 560017 A7 _B7 5. Description of the invention (4 is smaller. (Please read the precautions on the back before filling out this page) Therefore, using BCB to cover the insulation layer around the electronic circuit can cause conductor loss And the dielectric loss is reduced, which reduces the signal loss through the electronic circuit. In this way, by using BCB in the organic insulating material of the present invention, the conductor loss and dielectric loss of the circuit can be reduced, in addition to the effect according to the first embodiment It is also possible to obtain a semiconductor connection substrate with a small signal loss. Also, the use of the glass used in Example 2 for the glass substrate naturally improves the reliability of the semiconductor connection substrate such as impact resistance. (Implementation Example 4) In Example 4, a low dielectric component containing a crosslinked component containing a plurality of styryl groups represented by the general formula (Chemical Formula 1) and a high molecular weight body having a weight average molecular weight of 5000 or more was used. Ionization resin composition. In this embodiment, it is the same as in Example 1 except for the organic insulating material 2. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs, the method of manufacturing the semiconductor connection substrate of this embodiment is in addition to Except for the method for forming the above-mentioned low-medium-separation-rate resin composition, it is the same as in Example 1. The formation of the above-mentioned low-medium-separation-rate resin composition was performed as follows. 30 parts by weight 1, 2-double (Vinylphenyl) ethane and 0 parts by weight of cyclic polyolefin Zeonex 480 (manufactured by Japan En), 0.3 parts by weight of hardened 1 catalyst, all acetylene 2 5 B three kinds of raw materials were dissolved in a xylene solvent to make The solid content becomes 38%, and the lacquer is produced by spin coating. The lacquer is applied by spin coating, and the paper size is 120 tons / This paper size is applicable to China National Standard (CNS) A4 specification (210X297 mm) -29- 560017 kl B7_ V. Description of the invention ((Please read the precautions on the back before filling in this page} After 2 minutes, perform step hardening at 2 0 ° C / 5 minutes to form a 10 // m insulator. On this top Spin coating positive liquid photoresist 〇FPR 8 0 0, 5 0 cp, after drying, through exposure, development process, a photoresist mask is formed so that the opening end opening is located inside 2 0 // m than the lower electrode end. After that, c F 4 dry-etched the above-mentioned low dielectric-separation-rate resin composition to expose the dielectric on the lower electrode. Finally, the photoresist was peeled off. The dielectric constant of the low-dielectric-separation resin composition was 2. 4 and the dielectric-separation rate was 0.00. 〇1, less than 3.5 · 0.002 of photosensitive polyimide. It is also less than 2_65, 0.003, which is less than 306, and the price is 20,000 yen / kg, which is about 1/10 compared with BCB's 230,000 yen / kg. Therefore, the use of the above-mentioned low-dielectric-separation resin composition in the insulating layer covering the electronic circuit can reduce the conductor loss and the dielectric loss, and can reduce the signal loss through the electronic circuit at a low cost. Printed by the Intellectual Property Office of the Ministry of Economic Affairs, Consumer Cooperatives. Of course, the glass used in Example 2 is used for the glass substrate, and it is of course possible to improve reliability such as the impact resistance of the semiconductor connection substrate. (Embodiment 5) Figure 2 is a sectional view showing a semiconductor connection substrate according to an embodiment of the present invention. In FIG. 2, the 1-series glass substrate (Japan Electric Glass, BLC) has a thickness of 0.5 mm. In the second figure, 2 is an organic insulating material, using photosensitive polyimide. The paper size applies the Chinese National Standard (CNS) A4 specification (210X297 male thin) -30-560017 A7 B7 V. Description of the invention (2¾ ( (Introduction to HD-6000). (Please read the precautions on the back before filling in this page.) The capacitor element formed inside the organic insulating material 2 is the lower electrode 3 a made of Cu and oxidized by T a The dielectric material 3 b composed of the object, the three-layer capacitor element 3 composed of the upper electrode 3 c composed of Cu, and the lower electrode 3 / a composed of CU, composed of polyimide The dielectric material 3 — b is a three-layer capacitor element 3 / composed of an upper electrode 3 / c made of Cu. The inductor element 4 is a spiral inductor and the material is Cu. The resistance element 5 is The resistor 5b is composed of a resistor 5b and electrodes 5a, 5c. The resistor 5b is a compound of Ta and Ti, and the electrodes 5a, 5c are composed of Cu. In the second figure, 6 is used for mounting on a printed circuit board or the like. Metal terminal portion for substrate connection. Hereinafter, the semiconductor connection substrate of FIG. 2 will be described. Manufacturing method: Printed on a glass substrate with a thickness of 0.5 mm by a consumer cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs, a film thickness of 50 nm C r was formed by sputtering, and a film thickness of 50 nm C u was formed. This was used as copper plating. A seed film for power supply. A negative liquid photoresist PM ER-N-CA1000 (manufactured by Tokyo Chemical Industry Co., Ltd.) was spin-coated on the Cu film, pre-baked on a hot plate, and exposed. During the development process, a photoresist mask is formed. The photoresist opening is subjected to 1 0 // m copper plating at a current density of 1 A / dm. After that, the photoresist mask is removed and the copper uranium etching solution is used for cobra etching ( (Made by Ebara Electric Co., Ltd.) to remove the copper seed film. In addition, the permanganic acid Cr etchant was used to remove the Cr seed film to form the lower electrode. This paper is sized to the Chinese National Standard (CNS) A4 (210X297) (%) &Quot; -31-Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 560017 A7 B7 V. Description of the invention (d) Then, as a barrier film, 50 nm C r ο was formed by sputtering, and then the above lower electrode was formed. T a 2 05 was formed into a thickness of 500 nm by sputtering on 3 a. The T a 2 05 was coated Type liquid photoresist 〇FPR800, 500cp (manufactured by Tokyo Chemical Industry Co., Ltd.), which is dried, exposed, and developed to form a photoresist mask for the dielectric material. After that, CF 4 is used for dry etching to remove unnecessary parts. The photoresist mask was removed, and the barrier layer that was not used was etched with a super-acid-based C r contacting solution to form a dielectric material. Then, photosensitive polyimide HD6000 (made by Lihwa Kasei) was spin-coated on the After the hot plate is pre-baked, the dielectric material on the lower electrode 3a is exposed during the development process after exposure. At this time, the coating portion of the polyimide is opened so as to be cut off and used as a semiconductor connection substrate. The dicing area used for the dicing is located inside 8 0 // m. This polyimide is hardened at 250 ° C / 2 h r in a nitrogen atmosphere to form an organic insulating material of 10 / m. The organic insulating material on the lower electrode 3 > a formed in this process is a dielectric material 3 > b. Then, a 500 n m T a N film was formed by a sputtering method. A positive liquid photoresist OFPR800, 100 cp was rotated on the upper surface, and pre-baking was performed, followed by exposure, to develop a photoresist pattern mask. C F 4 dry etching of the T a N film was performed using this mask. After that, the photoresist is peeled to form a plurality of resistive elements. After that, a film of 50 n m C r was formed by sputtering and a film of 500 n m C u was formed again, and this was used as a seed film. Spin-coated on the Cu film This paper is sized for China National Standard (CNS) A4 (2 0x297 mm) (Please read the precautions on the back before filling this page)

-32- 560017 A7 B7 五、發明説明（3么 布正型液狀光阻劑PMER — N— CA 1 〇 〇 〇 (東京應 (請先閱讀背面之注意事項再填寫本頁) 化所製），在熱板進行預烘之後，經曝光，顯像過程以形 成光阻罩。在該光阻開口部以1 A / d m的電流密度進行 1 0 // m鍍銅。之後除去光阻罩，以銅蝕刻液可布拉蝕刻 (荏原電產所製）除去銅種膜。又，使用過錳酸系C !蝕 刻液除去C r種膜，以形成上部電極及電阻器電極及感應 器元件。 在該上部電極及電阻器電極及感應器元件所形成的面 旋轉塗布感光性聚醯亞胺H D 6 0 0 0 ( H D M S所製） 並進行預烤之後，經曝光，顯像形成用以層間連接的開口 部。這時候，開口成聚醯亞胺的被覆部切斷作爲半導體連 接基板而用以個片化所使用的劃片區域相比較位在8 0 # m內側。又，以2 5 0 °C / 1 h r進行硬化以形成有機 絕緣材。 經濟部智慧財產局8工消費合作社印製 在該有機絕緣材表面爲了形成金屬端子部，成膜電鍍 用種膜Cr :50nm， Cu:50〇nm。在該Cu膜 上旋轉塗布負型液狀光阻材PMER — N— CA 1 〇 〇 〇 (東京應化所製），進行預烘之後，經曝光，顯像而形成 鍍光阻罩之後，藉鍍銅形成1 0 // m的鍍膜之後，作爲障 壁層再形成2 // m的鍍鎳膜。最後，剝離光阻劑並剝離電 鍍種膜，俾形成配線及金屬端子部。 在該金屬端子部所形成的面旋轉塗布感光性聚醯亞胺 HD6000 (HDMS所製）並進行預烘後，經曝光， 顯像形成用以形成焊球的開口部。這時候，開口成聚醯亞 本紙張尺度適用中國國家標準（CNS ) A4規格（210X 297公釐） -33- 560017 A7 B7 五、發明説明（d (請先閱讀背面之注意事項再填寫本頁) 胺的被覆部切斷作爲半導體連接基板而用以個片化所使用 的劃片區域相比較位在8 0 // m內側。又，以2 5 0 °C / 1 h r進行硬化以形成有機絕緣材。 在上述金屬端子部表面施以無電解鍍金處理之後，藉 由金屬罩將銲劑塗布在所定部分之後，排列直徑2 0 0 # m的自由鉛焊球，藉由迴銲處理形成外部電極。 最後，使用切斷裝置切成個片化以製作半導體連接基 板。 在本實施例中，將聚醯亞胺等介質常數較低的有機材 料與T a氧化物等介質常數較高的無機材料一起使用作爲 介質材料，即可精確度優異地製作較小電容値的電容器， 可提高電路的可靠性，可擴展可對應的電容値。且將介質 材料作成與覆蓋元件周圍的絕緣材相同材料，除了依實施 例1的效果之外，可用更簡便又低成本的處理加以製造。 又，在玻璃基板使用在實施例2所使用的玻璃，則當 然使得半導體連接基板的耐衝擊性等的可靠性更高者。 經濟部智慧財4局員工消費合作社印製 又，在有機絕緣材使用實施例3的B C B，則使得電 路的導體損失及介電損失變小，能得到信號的通過損失較 小的半導體連接基板。 又，在有機絕緣材使用在實施例4所使用的低介質分 離率樹脂組成物，則使得導體損失及介質損失變小，能低 成本地減低通過電路的信號損失。 又，第2圖是本發明是一實施例；各元件的配置是並 未被加以限制者。 ^氏張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） ' 一 -34- 560017 A7 ____B7_ 五、發明説明（ (實施例6 ) (請先閲讀背面之注意事項再填寫本頁) 第3圖是表示本發明的一實施例的半導體連接基板的 剖視圖。在第3圖中，1是玻璃基板（日本電氣玻璃， BLC)，其厚度是0 · 5mm。 在第3圖中，2是有機絕緣材，使用感光性聚醯亞胺 (日立化成，HD — 6000)。 構成在有機絕緣材2的內部的電容器元件，是由C u 所構成的下部電極3 a，由T a的氧化物所構成的介質材 料3 b，由C u所構成的上部電極3 c所成的三層構造的 電容器元件3，及由Cu所構成的下部電極3 / a，由聚 醯亞胺所構成的介質材料3 / b，由C u所構成的上部電 極3 / c所成的三層構造的電容器元件3 /所構成。又在 上部電極上設有用以與上層的配線相連接的連接部9。 感應器元件4是螺旋型感應器，其材料是C u。 經濟部智慈財產局員工消費合作社印製 電阻元件5是由電阻器5b與電極5 a, 5 c所構成 電阻器5b是T a與T i的化合物，而電極5 a, 5 c是 由C u所構成。 在第3圖中，6是使用於與印刷基板等安裝基板連接 的金屬端子部。 又第4圖是表示第3圖中的電容器元件的部分者。在 第4圖的電容器是能覆蓋下部電極3 c的側面地形成介電 材料3 b，以減低上下電極間之漏電不良。上部電極3 a 是以小於下部電極3 c的面積所形成之故，因而電容器的 本纸張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） -35- 560017 A7 ____B7_ 五、發明説明（ 電容是依存於上部電極的面積。如第4圖所示地，上部電 極3 c與上層的配線之連接，是從上部電極3 c的端部以 外的部分經由有機絕緣材2的通孔朝上層拉出配線進行連 接。若從上部電極的側面拉出配線進行連接時，對於與下 部電極相對向的配線的拉出部的面積，也會成爲電容器的 電容之故，因而形成電容器之際，被要求精細的精確度。 對於此，藉由作成如第4圖所示地的連接部9，連接部是 與電容器之電容無關之故，因而可形成更高精確度的電容 器。 以下，對於第3圖的半導體連接基板，說明其製造方 法。 在0 . 5 m m厚度的玻璃基板以濺鍍法成膜5 0 n m C r，又成膜5 0 0 n m C u，將此作爲鍍銅給電用種 膜。在該C u膜上旋轉塗布負型液狀光阻劑Ρ Μ E R - N 一 C A 1 〇 〇 〇 (東京應化所製），在熱板上施以預烘之 後，經曝光，顯像過程俾形成光阻罩。在該光阻開口部以 1 A / d m的電流密度來進行1 0 // m鍍銅。之後除去光 阻罩，以銅蝕刻液可布拉蝕刻（荏原電產所製）來除去銅 種膜。又，使用過錳酸系C r蝕刻液來除去C !·種膜，俾 形成下部電極。 然後，作爲障壁膜，藉由濺鍍法形成5 0 n m C r ο 之後，在上述下部電極3 a上藉由濺鍍法將T a 2〇5 成膜成爲5 0 0 nm厚度。在該T a 2〇5上塗布正型液狀 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） (請先閱讀背面之注意事項再填寫本頁)-32- 560017 A7 B7 V. Description of the invention (made by 3 Mob positive liquid photoresist PMER — N — CA 1 〇〇〇 (Tokyo should (please read the precautions on the back before filling this page)) After the hot plate is pre-baked, it is exposed and developed to form a photoresist mask. The photoresist opening is subjected to 1 0 // m copper plating at a current density of 1 A / dm. After that, the photoresist mask is removed, The copper seed film was removed with copper etching solution Cobra etching (manufactured by Korihara Densho). The Cr seed film was removed using a permanganic acid C! Etching solution to form an upper electrode, a resistor electrode, and an inductor element. A photosensitive polyimide HD 6 0 0 0 (made by HDMS) is spin-coated on a surface formed by the upper electrode, the resistor electrode, and the sensor element, and pre-baked, and then exposed to form an image for interlayer connection. At this time, the coating portion that is opened into polyimide is cut off as a semiconductor connection substrate and the scribe area used for singulation is located inside 8 0 # m. Also, 2 5 0 ° C / 1 hr to harden to form an organic insulating material. Fei Co., Ltd. printed on the surface of this organic insulating material in order to form metal terminals, forming a seed film for electroplating Cr: 50nm, Cu: 50nm. A negative liquid photoresist PMER — N— was spin-coated on the Cu film. CA 1 00 (manufactured by Tokyo Chemical Industry Co., Ltd.), after pre-baking, exposure and development to form a plated photoresist mask, copper plating to form a 1 0 // m plating film, and then forming a barrier layer 2 // m of nickel-plated film. Finally, the photoresist is peeled off and the plating seed film is peeled off to form wiring and metal terminal portions. On the surface formed by the metal terminal portions, photosensitive polyimide HD6000 (made by HDMS) is spin-coated. ) And pre-bake, and after exposure, develop the openings to form the solder balls. At this time, the openings are made of Polycarbonate paper. The size of the paper conforms to Chinese National Standard (CNS) A4 (210X 297 mm) -33 -560017 A7 B7 V. Description of the invention (d (Please read the precautions on the back before filling in this page) The amine coating section is cut off as a semiconductor connection substrate and the scribe area used for singulation is located at 8 compared to 8 0 // m inside. Again, hardening at 2 5 0 ° C / 1 hr After the surface of the metal terminal is subjected to electroless gold plating, a flux is applied to a predetermined portion by a metal cover, and free lead solder balls having a diameter of 200 # m are arranged, and reflow soldering is performed. An external electrode is formed by processing. Finally, a cutting device is used to form a semiconductor connection substrate. In this embodiment, an organic material having a lower dielectric constant such as polyimide and a dielectric constant having a lower dielectric constant such as Ta oxide are used. The use of high inorganic materials together as a dielectric material can produce capacitors with a small capacitance 优异 with excellent accuracy, which can improve the reliability of the circuit and expand the corresponding capacitance 値. In addition, the dielectric material is made of the same material as the insulating material surrounding the element. In addition to the effect of the first embodiment, it can be manufactured by a simpler and lower cost process. In addition, when the glass used in Example 2 is used for the glass substrate, the reliability of the impact resistance and the like of the semiconductor connection substrate is naturally made higher. Printed by the Consumer Cooperative of the 4th Bureau of the Ministry of Economic Affairs and Consumer Cooperatives. The use of the B C B of Example 3 in the organic insulating material reduces the conductor loss and dielectric loss of the circuit, and can obtain a semiconductor connection substrate with a small signal loss. In addition, the use of the low-dielectric-separation-rate resin composition used in Example 4 for the organic insulating material reduces the conductor loss and the dielectric loss, and reduces the signal loss through the circuit at a low cost. Fig. 2 shows an embodiment of the present invention, and the arrangement of each element is not limited. ^ 'S scale is applicable to China National Standard (CNS) A4 specification (210X297 mm)' 一 -34- 560017 A7 ____B7_ V. Description of the invention ((Example 6) (Please read the precautions on the back before filling this page) 3 is a cross-sectional view showing a semiconductor connection substrate according to an embodiment of the present invention. In FIG. 3, 1 is a glass substrate (Japan Electric Glass, BLC), and its thickness is 0.5 mm. In FIG. 3, 2 is As the organic insulating material, a photosensitive polyimide (Hitachi Kasei, HD — 6000) is used. The capacitor element included in the organic insulating material 2 is a lower electrode 3 a made of Cu and an oxide of T a The dielectric material 3 b is composed of a three-layered capacitor element 3 composed of an upper electrode 3 c composed of Cu and the lower electrode 3 / a composed of Cu is a dielectric composed of polyimide The material 3 / b is a three-layer capacitor element 3 / composed of an upper electrode 3 / c made of Cu. A connection part 9 is provided on the upper electrode for connection with the upper-layer wiring. Induction The sensor element 4 is a spiral-type sensor whose material is Cu. Economy The Intellectual Property Office employee consumer cooperative printed a resistive element 5 composed of a resistor 5b and electrodes 5 a, 5 c. The resistor 5 b is a compound of T a and Ti, and the electrodes 5 a, 5 c are made by Cu. In Fig. 3, 6 is a metal terminal portion used for connection to a mounting substrate such as a printed circuit board. Fig. 4 shows a portion of the capacitor element in Fig. 3. The capacitor in Fig. 4 can cover the capacitor. A dielectric material 3b is formed on the side of the lower electrode 3c to reduce the leakage current between the upper and lower electrodes. The upper electrode 3a is formed with an area smaller than the lower electrode 3c. Therefore, the paper size of the capacitor is applicable to China National Standard (CNS) A4 specification (210X297 mm) -35- 560017 A7 ____B7_ V. Description of the invention (Capacitance depends on the area of the upper electrode. As shown in Figure 4, the connection between the upper electrode 3 c and the upper wiring The wiring is pulled out from the part other than the end of the upper electrode 3 c to the upper layer through the through hole of the organic insulating material 2. When the wiring is pulled out from the side of the upper electrode for connection, the wiring opposite to the lower electrode is connected Pull out The area of the capacitor will also be the capacitance of the capacitor, so fine precision is required when the capacitor is formed. For this, by making the connection portion 9 as shown in Fig. 4, the connection portion is the capacitance with the capacitor. Irrespective of the reason, it is possible to form a capacitor with higher accuracy. Hereinafter, the method for manufacturing the semiconductor connection substrate shown in FIG. 3 will be described. A film of 0.5 nm C r is formed on a glass substrate having a thickness of 0.5 mm by sputtering. Then, 500 nm Cu was formed, and this was used as a seed film for copper plating power supply. This Cu film was spin-coated with a negative liquid photoresist PM ER-N-CA 1000 (manufactured by Tokyo Chemical Industry Co., Ltd.), pre-baked on a hot plate, exposed, and developed.俾 forms a photoresist cover. 1 0 // m copper plating is performed on the photoresist opening with a current density of 1 A / d m. After that, the photoresist mask was removed, and the copper seed film was removed with a copper etching solution Cobra etching (manufactured by Ebara Densan). The C! Seed film was removed using a permanganic acid-based Cr etching solution to form a lower electrode. Then, as a barrier film, 50 n m C r ο was formed by a sputtering method, and T a 2 05 was formed into a thickness of 50 nm by a sputtering method on the lower electrode 3 a. Apply positive liquid on the T a 2 05. The paper size applies the Chinese National Standard (CNS) A4 (210X297 mm) (Please read the precautions on the back before filling this page)

、tT 經濟部智慧財產苟員工消費合作社印製 -36- 560017 A7 B7 五、發明説明（j ^ (請先閱讀背面之注意事項再填寫本頁) 光阻劑OFPR800， 500cp(東京應化所製）， 經乾燥，曝光，顯像過程，以形成介質材料的光阻罩。之 後，使用C F 4進行乾蝕刻，除去不用部分之後，除去光阻 罩，又以過錳酸系C r蝕刻液蝕刻不用部分的障壁層以形 成介質材料2 5 b。 然後，藉由旋轉塗布感光性聚醯亞胺H D 6 0 0 0 ( 曰立化成所製），在熱板預烘之後，經曝光，顯像過程露 出下部電極3 a上的介質材料。這時候，聚醯亞胺的開口 端部開口成比下部電極端部位在2 0 // m內側。在氮氣環 境中以2 5 0 °C / 2 h r硬化該聚醯亞胺，以形成1 〇 // m的有機絕緣材。在該過程所形成的下部電極3 / a上 的有機絕緣材是成爲介質材料3 / b。 經濟部智慧財產局員工消費合作社印製 之後，使用濺鍍法成膜5 0 n m C r，又成膜 5 0 0 n m C u，將此作爲種膜。在該C u膜上旋轉塗 布正型液狀光阻劑PMER — N— CA 1 0 0 0 (東京應 化所製），在熱板進行預烘之後，經曝光，顯像過程以形 成光阻罩。在該光阻開口部以1 A / d m的電流密度進行 1 0 // m鍍銅。之後除去光阻罩，以銅蝕刻液可布拉蝕刻 (荏原電產所製）除去銅種膜。又，使用過錳酸系C r蝕 刻液除去C r種膜，以形成上部電極。 在該上部電極所形成的面旋轉塗布感光性聚醯亞胺 H D 6 0 0 0 ( H D M S所製）並進行預烤之後，經曝光 ，顯像以形成層間連接的開口部，經2 5 0 °C / 1 h r硬 化以形成有機絕緣材。 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） -37 - 560017 A7 B7 五、發明説明（^ (請先閱讀背面之注意事項再填寫本頁) 之後，藉由濺鍍法形成5 0 0 n m T a N膜。在其 上面旋轉正型液狀光阻劑OFPR800, lOOcp， 並預烘之後，經曝光，顯像以形成光阻圖案罩。使用該光 罩施以C F 4乾蝕刻T a N膜。之後剝離光阻劑以形成複數 電阻元件。 然後，使用濺鍍法成膜5 0 n m C r，再成膜 5 0 0 n m C u，將此作爲種膜。在該C u膜上旋轉塗 布負型液狀光阻劑PMER — N— CA 1 〇 〇 〇 (東京應 化所製），以熱板進行預烘之後，經曝光，顯像過程俾形 成光阻罩。以1 A / d m的電流密度在該光阻開口部進行 1 0 A m鍍銅。然後除去光阻罩，以銅蝕刻液可布拉蝕刻 (荏原電產所製）除去銅種膜。又使用過錳酸系C r蝕刻 液除去C I·種膜，俾形成電阻器電極。 在該電阻體電極所形成的面旋轉塗布感光性聚醯亞胺 H D 6 0 0 0 ( H D M S所製）並進行預烤之後，經曝光 ，顯像以形成層間連接的開口部，經2 5 0 t / 1 h 硬 化以形成有機絕緣材。 經濟部智慧財產局員工消費合作社印製 然後，使用濺鍍法成膜5 0 n m C r，再成膜 5 0 0 n m C ια，將此作爲種膜。在該C u膜上旋轉塗 布負型液狀光阻劑PMER — N— CA 1 0 0 0 (東京應 化所製），以熱板進行預烘之後，經曝光，顯像過程俾形 成光阻罩。以1 A / d m的電流密度在該光阻開口部進行 1 0 // m鍍銅。然後除去光阻罩，以銅蝕刻液可布拉蝕刻 (荏原電產所製）除去銅種膜。又使用過錳酸系C r蝕刻 本紙張尺度適用中國國家標準（CNS ) A4規格（210X29*7公釐） -38- 560017 A7 B7 五、發明説明（& 液除去C r種膜，俾形成感應器元件及配線及金屬端子。 (請先閲讀背面之注意事項再填寫本頁) 在該金屬端子部，感應器元件及配線所形成的面旋轉 塗布感光性聚醯亞胺HD6 0 0 0 (HDMS)所製，並 進行預烘之後，經曝光，顯像以形成用以形成焊球的開口 部，經2 5 0 °C / 1 h r硬化以形成有機絕緣材。 在上述金屬端子部表面施以無電解鍍金處理之後，藉 由金屬罩將銲劑塗布在所定部分之後，排到直徑2 0 0 // m的自由鉛焊球，藉由迴銲處理形成外部電極。 最後，使用切斷裝置切成個片化以製作半導體連接基 板。 依照本實施例，藉由電容器元件及感應器元件及電阻 元件分別配置在從玻璃基板表面不相同的複數距離，以更 高密度可積體各元件，除了依實施例1，5的效果之外， 可得到更小型的半導體連接基板。 又，在玻璃基板使用在實施例2所使用的玻璃，則當 然使得半導體連接基板的耐衝擊性等的可靠性更高者。 經濟部智慧財產局員工消費合作社印奴 又，在有機絕緣材使用實施例3的B C B，則使得電 路的導體損失及介電損失變小，能得到信號的通過損失較 小的半導體連接基板。 又，在有機絕緣材使用在實施例4所使用的低介質分 離率樹脂組成物，則使得導體損失及介質損失變小，能低 成本地減低通過電路的信號損失。 又，第3圖是本發明是一實施例；各元件的配置是並 未被加以限制者。 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐) ~ ~ -39- 560017 A7 B7 經濟部智慧財產局S工消費合作社印製 五、發明説明（4 (實施例7 ) 第5圖是表示本發明的一實施例的半導體連接基板的 剖視圖。在第5圖的半導體連接基板中，在金屬端子部6 的正下方形成具有應力緩衝功能的有機絕緣材1 〇。在具 有該應力緩衝功能的有機絕緣材，使用將聚醯亞胺微小粒 子加以分散的液狀聚醯亞胺材料（日立化成，G Η -Ρ 5 0 0 )。其他構成要素是與實施例6同樣。 以下，對於第5圖的半導體連接基板，說明其製造方 法。 在〇 · 5 m m厚度的玻璃基板以濺鍍法成膜5 0 n m C r，又成膜5 Ο 0 n m C u，將此作爲鑛銅給電用種 膜。在該C u膜上旋轉塗布負型液狀光阻劑Ρ Μ E R - N 一 CA1 〇〇〇 (東京應化所製），在熱板上施以預烘之 後，經曝光，顯像過程俾形成光阻罩。在該光阻開口部以 1 A / d m的電流密度來進行1 〇 // m鑛銅。之後除去光 阻罩，以銅蝕刻液系可布拉蝕刻（荏原電產所製）來除去 銅種膜。又，使用過錳酸C r蝕刻液來除去C J：種膜，俾 形成下部電極。 然後，作爲障壁膜，藉由濺鍍法形成5 0 n m C r ο 之後，在上述下部電極3 a上藉由濺鍍法將T a 2〇5 成膜成爲5 0 0 nm厚度。在該T a 2〇5上塗布正型液狀 光阻劑OFPR800， 500cp(東京應化所製）， (請先閲讀背面之注意事項再填寫本頁)Printed by tT, Intellectual Property of the Ministry of Economic Affairs, Employees' Cooperatives -36- 560017 A7 B7 V. Description of Invention (j ^ (Please read the notes on the back before filling this page) Photoresist OFPR800, 500cp ), Drying, exposure, and development processes to form a photoresist mask for the dielectric material. After that, dry etching using CF 4 to remove unused parts, remove the photoresist mask, and etch with a permanganic acid Cr etchant. A part of the barrier layer is not used to form a dielectric material 2 5 b. Then, a photosensitive polyimide HD 6 0 0 0 (manufactured by Lih Kasei Co., Ltd.) is spin-coated, pre-baked on a hot plate, and exposed after exposure to develop The dielectric material on the lower electrode 3 a is exposed during this process. At this time, the open end of the polyimide is opened at an inner side of 20 m than the lower electrode end. In a nitrogen environment at 250 ° C / 2 hr The polyimide is hardened to form a 10 // m organic insulating material. The organic insulating material on the lower electrode 3 / a formed in the process is a dielectric material 3 / b. Consumption by employees of the Intellectual Property Bureau of the Ministry of Economic Affairs After printing by the cooperative, film formation using sputtering method 5 0 nm C r, and then formed 5 0 0 nm Cu, this was used as a seed film. On the Cu film, a positive liquid photoresist PMER — N — CA 1 0 0 0 (Tokyo Inst. After the hot plate is pre-baked, it is exposed and developed to form a photoresist mask. The photoresist opening is subjected to 1 0 // m copper plating at a current density of 1 A / dm. After that, the photoresist is removed. The copper seed film was removed with a copper etching solution Cobra etching (manufactured by Korihara Densho). The Cr seed film was removed using a permanganic acid Cr etching solution to form an upper electrode. The surface was spin-coated with a photosensitive polyimide HD 6 0 0 (made by HDMS) and pre-baked. After exposure, it was developed to form an opening between the layers. It was hardened at 250 ° C / 1 hr to Forms organic insulating material. This paper size applies Chinese National Standard (CNS) A4 specification (210X297mm) -37-560017 A7 B7 V. Description of the invention (^ (Please read the precautions on the back before filling this page), borrow A 500 nm T a N film was formed by a sputtering method. A positive liquid photoresist OFPR800, 100 cp was rotated on the surface, and Then, after exposure, development is performed to form a photoresist pattern mask. CF 4 is used to dry etch the T a N film using this mask. After that, the photoresist is peeled off to form a plurality of resistive elements. Then, a film is formed by sputtering using a sputtering method. nm C r, and then formed 500 nm Cu, which was used as a seed film. A negative liquid photoresist PMER — N — CA 1 000 (made by Tokyo Chemical Industry Co., Ltd.) was spin-coated on the Cu film. ), After pre-baking with a hot plate, after exposure, a photoresist mask is formed during the development process. 10 A m copper plating was performed on the photoresist opening with a current density of 1 A / d m. Then, the photoresist mask was removed, and the copper seed film was removed with copper etching solution Cobra etching (manufactured by Ebara Densan). In addition, a permanganic acid-based Cr etching solution was used to remove the CI seed film, thereby forming a resistor electrode. Photosensitive polyimide HD 6 0 0 0 (made by HDMS) was spin-coated on the surface formed by the resistor electrode and pre-baked, and then exposed to develop to form an opening portion connected between layers. After 2 5 0 t / 1 h hardens to form an organic insulating material. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. Then, a film of 50 n m Cr was formed by sputtering and then a film of 500 n m C a was used as a seed film. A negative liquid photoresist PMER — N — CA 1 0 0 0 (manufactured by Tokyo Chemical Industry Co., Ltd.) was spin-coated on the Cu film. After pre-baking with a hot plate, a photoresist was formed after exposure. cover. 1 0 // m copper plating was performed on the photoresist opening with a current density of 1 A / dm. Then, the photoresist mask was removed, and the copper seed film was removed with copper etching solution Cobra etching (manufactured by Ebara Densan). Permanganic acid C r etching is also used. This paper is sized for Chinese National Standard (CNS) A4 (210X29 * 7 mm) -38- 560017 A7 B7. 5. Description of the invention (& liquid removal of C r seed film, formation of Sensor elements, wiring and metal terminals. (Please read the precautions on the back before filling this page.) In this metal terminal part, the surface formed by the sensor elements and wiring is spin-coated with photosensitive polyimide HD6 0 0 0 ( HDMS), and pre-baking, after exposure, developed to form the openings to form solder balls, hardened at 250 ° C / 1 hr to form an organic insulating material. After the electroless gold plating treatment, the flux is applied to a predetermined portion by a metal cover, and then it is discharged to a free lead solder ball with a diameter of 2 0 // // m, and an external electrode is formed by a reflow treatment. Finally, the cutting is performed using a cutting device. According to this embodiment, the capacitor element, the inductor element, and the resistance element are respectively arranged at a plurality of different distances from the surface of the glass substrate, and each element can be integrated at a higher density. In addition to the effects of Examples 1 and 5, a smaller semiconductor connection substrate can be obtained. In addition, if the glass used in Example 2 is used for the glass substrate, it is of course possible to make the semiconductor connection substrate more reliable in terms of impact resistance and the like. The use of the BCB of Example 3 in the organic insulating material makes the conductor loss and dielectric loss of the circuit smaller, and can obtain a signal connection with a smaller semiconductor connection. In addition, the use of the low-dielectric-separation-rate resin composition used in Example 4 as the organic insulating material reduces the conductor loss and dielectric loss, and can reduce the signal loss through the circuit at low cost. Also, FIG. 3 The present invention is an embodiment; the configuration of each element is not restricted. This paper size applies the Chinese National Standard (CNS) A4 specification (210X297 mm) ~ ~ -39- 560017 A7 B7 Intellectual Property Bureau of the Ministry of Economic Affairs Printed by S. Consumer Cooperatives 5. Description of Invention (4 (Embodiment 7) FIG. 5 is a cross-sectional view of a semiconductor connection substrate according to an embodiment of the present invention. In the semiconductor connection substrate of FIG. 5, an organic insulating material 10 having a stress buffering function is formed directly under the metal terminal portion 6. As the organic insulating material having the stress buffering function, polyimide fine particles are dispersed. Liquid polyimide material (Hitachi Kasei, G G -P 5 0 0). The other constituent elements are the same as those in Example 6. Hereinafter, the method of manufacturing the semiconductor connection substrate of FIG. 5 will be described. A glass substrate having a thickness of 50 mm was formed into a film of 50 nm C r and a film of 50 nm C u by a sputtering method, and this was used as a seed film for mineral copper power supply. This Cu film was spin-coated with a negative liquid photoresist PM ER-N-CA100 (manufactured by Tokyo Chemical Industry Co., Ltd.), pre-baked on a hot plate, and exposed and developed. Form a photoresist cover. In the photoresist opening, a current of 1 A / dm is used to perform ore // m copper. Thereafter, the photoresist mask was removed, and the copper seed film was removed with a copper etching solution based on Cobra etching (manufactured by Ebara Densan). In addition, the Cj: seed film was removed using a permanganic acid Cr etching solution to form a lower electrode. Then, as a barrier film, 50 n m C r ο was formed by a sputtering method, and T a 2 05 was formed into a thickness of 50 nm by a sputtering method on the lower electrode 3 a. Apply positive liquid photoresist OFPR800, 500cp (manufactured by Tokyo Chemical Co., Ltd.) on this T a 2 05, (Please read the precautions on the back before filling this page)

、1T -Ur. 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） -40- 560017 Μ Β7 五、發明説明（^ (請先閱讀背面之注意事項再填寫本頁) 經乾燥，曝光，顯像過程，以形成介質材料的光阻罩。之 後，使用C F 4進行乾蝕刻，除去不用部分之後，除去光阻 罩，又以過猛酸系C r蝕刻液蝕刻不用部分的障壁層以形 成介質材料25b。 然後，藉由旋轉塗布感光性聚醯亞胺HD6000( 曰立化成所製），在熱板預烘之後，經曝光，顯像過程露 出下部電極上的介質材料。這時候，聚醯亞胺的開口端部 開口成比下部電極端部位於2 0 // m內側。在氮氣環境中 嫜 ，以2 5 0 °C / 2 h r硬化該聚醯亞胺，以形成1 〇 # m 的有機絕緣材。 之後，使用濺鍍法成膜5 0 n m C r，又成膜 5 0 0 n m C u，將此作爲種膜。在該C u膜上旋轉塗 布正型液狀光阻劑PMER — N— CA 1 0 〇 0 (東京應 經濟部智慧財產局員工消費合作社印製 化所製），在熱板進行預烘之後，經曝光，顯像過程以形 成光阻罩。在該光阻開口部以1 A / d m的電流密度進行 1 0 // m鍍銅。之後除去光阻罩，以銅蝕刻液可布拉蝕刻 (荏原電產所製）除去銅種膜。又，使用過錳酸系C r蝕 刻液除去C r種膜，以形成上部電極。 在該上部電極所形成的面旋轉塗布感光性聚醯亞胺 H D 6 0 0 0 ( H D M S所製）並進行預烤之後，經曝光 ，顯像以形成層間連接的開口部，經2 5 0 °C / 1 h r硬 化以形成有機絕緣材。 然後，藉由濺鍍法形成5 0 0 n m T a N膜。在該 上面旋轉正型液狀光阻劑〇F P R 8 0 〇， 1 〇 〇 c P， 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） -41 - 560017 kl ________B7_ 五、發明説明（4 (請先閱讀背面之注意事項再填寫本頁) 進行預烘之後，經曝光，顯像以形成光阻圖案罩。使用該 罩進行C F 4乾蝕刻T a N膜。之後剝離光阻劑以形成複數 電阻元件。 之後，使用濺鍍法成膜5 0 n m C r，又成膜 5 0 〇 n m C u，將此作爲種膜。在該c u膜上旋轉塗 布正型液狀光阻劑PMER - N—CA 1 〇 〇 〇 (東京應 化所製），在熱板進行預烘之後，經曝光，顯像過程以形 成光阻罩。在該光阻開口部以1 A / d m的電流密度進行 1 0 // m鍍銅。之後除去光阻罩，以銅蝕刻液可布拉蝕刻 (荏原電產所製）除去銅種膜。又，使用過錳酸系C r蝕 刻液除去C r種膜，以形成上部電極。 在該電阻器件所形成的面旋轉塗布感光性聚醯亞胺 H D 6 0 0 0 ( H D M S所製）並進行預烤之後，經曝光 ，顯像以形成層間連接的開口部，經2 5 0 °C / 1 h r硬 化以形成有機絕緣材。 經濟部智慧財產局員工消費合作社印製 之後，使用濺鍍法成膜5 0 n m C r，又成膜 5 0 0 n m C u，將此作爲種膜。在該C u膜上旋轉塗 布正型液狀光阻劑PMER — N— CA 1 0 0 0 (東京應 化所製），在熱板進行預烘之後，經曝光，顯像過程以形 成光阻罩。在該光阻開口部以1 A / d m的電流密度進行 1 0 // m鍍銅。之後除去光阻罩，以銅蝕刻液可布拉蝕刻 (荏原電產所製）除去銅種膜。又，使用過錳酸系C r蝕 刻液除去C r種膜，以形成感應器元件及配線。 然後，將分散聚醯亞胺微小粒子的液狀聚醯亞胺材料 本紙張尺度適用中國國家標準（CNS ) A4規格（210X 297公釐） -42 - 經濟部智慧財產局員工消費合作社印製 560017 A7 _B7____ 五、發明説明（4 GH — P 5 0 0 (日立化成）使用作爲光罩進行印刷塗布 ，在熱板上施以2 0 0 t： / 2 5 m i η，在恒溫槽中施以 2 5 0 °C / 1 h r硬化，以形成具有應力緩衝功能的有機 絕緣材。 之後，使用濺鍍法成膜5 0 n m C I* ,又成膜 5 0 0 n m C u，將此作爲種膜。在該C u膜上旋轉塗 布正型液狀光阻劑PMER — N— CA 1 〇 0 0 (東京應 化所製），在熱板進行預烘之後，經曝光，顯像過程以形 成光阻罩。在該光阻開口部以1 A / d m的電流密度進行 1 0 // m鍍銅。之後除去光阻罩，以銅蝕刻液可布拉蝕刻 (荏原電產所製）除去銅種膜。又，使用過錳酸系C r蝕 刻液除去C r種膜，以形成配線及金屬端子部。 在該配線及金屬端子部所形成的面旋轉塗布感光性聚 醯亞胺HD6 0 0 0 (HDMS所製）並進行預烤之後， 經曝光，顯像以形成層間連接的開口部，經2 5 0 °C / 1 h r硬化以形成有機絕緣材。 在上述金屬端子部表面施以無電解鍍金處理之後，藉 由金屬罩將銲劑塗布在所定部分之後，排列直徑2 0 0 // m的自由鉛焊球，藉由迴銲處理形成外部電極。 最後，使用切斷裝置切成個片化以製作半導體連接基 板。 在本實施例中，藉由將具有應力緩衝功能的有機絕緣 材形成在金屬端子部9的正下方，連接於印刷基板等的安 裝基板之際，藉由半導體連接基板與安裝基板的熱膨脹係 本紙張尺度適用中國國家標準（CNS ) A4規格（210X 297公釐） ' ^ -43- (請先閱讀背面之注意事項再填寫本頁)、 1T -Ur. This paper size applies Chinese National Standard (CNS) A4 specification (210X297mm) -40-560017 Μ B7 V. Description of the invention (^ (Please read the notes on the back before filling this page) After drying, Exposure and development processes to form a photoresist mask for the dielectric material. After that, dry etching using CF 4 to remove the unused part, remove the photoresist mask, and etch the unused part of the barrier layer with a super-acid-based Cr etchant. The dielectric material 25b is formed. Then, a photosensitive polyimide HD6000 (manufactured by Li Kasei Co., Ltd.) is spin-coated, and after the hot plate is pre-baked, the exposure process is exposed to expose the dielectric material on the lower electrode. At this time The open end of the polyfluorene imide is located inside 20m // m from the lower electrode end. In a nitrogen environment, the polyfluorimide is hardened at 250 ° C / 2 hr to form 1 〇 # m of an organic insulating material. Then, 50 nm C r was formed by sputtering, and 50 nm C u was formed as a seed film. A positive liquid light was spin-coated on the Cu film. Resistant PMER — N— CA 1 0 〇0 (Tokyo Intellectual Property Office, Ministry of Economic Affairs (Produced by the Employee Consumer Cooperative Co., Ltd.), after preheating the hot plate, it is exposed and developed to form a photoresist mask. The photoresist opening is 1 0 / m at a current density of 1 0 // m Copper plating was performed. Thereafter, the photoresist cover was removed, and the copper seed film was removed with copper etching solution Cobra etching (manufactured by Ebara Densan). The permanganic acid C r etching solution was used to remove the C r seed film to form an upper electrode. A photosensitive polyimide HD 6 0 0 0 (made by HDMS) was spin-coated on the surface formed by the upper electrode and pre-baked, and then exposed to develop to form an opening connected between layers. After 2 5 0 ° C / 1 hr hardened to form an organic insulating material. Then, a 500 nm T a N film was formed by a sputtering method. A positive liquid photoresist 〇FPR 8 0 〇, 1 〇〇c was rotated thereon. P. This paper size is in accordance with Chinese National Standard (CNS) A4 specification (210X297 mm) -41-560017 kl ________B7_ V. Description of the invention (4 (Please read the precautions on the back before filling this page) After pre-baking, Expose and develop to form a photoresist pattern mask. Use this mask for CF 4 dry etching T a N film. Then the photoresist was peeled off to form a plurality of resistive elements. Then, 50 nm Cr was formed by sputtering, and 50 nm Cu was formed as a seed film. This Cu film was used as a seed film. A positive liquid photoresist PMER-N-CA 1000 (manufactured by Tokyo Chemical Industry Co., Ltd.) was spin-coated on the top. After preheating on a hot plate, it was exposed and developed to form a photoresist mask. 1 0 // m copper plating is performed on the photoresist opening with a current density of 1 A / dm. After that, the photoresist mask was removed, and the copper seed film was removed with a copper etching solution Cobra etching (manufactured by Ebara Densan). The Cr seed film was removed using a permanganic acid Cr etching solution to form an upper electrode. Photosensitive polyfluorene imide HD 6 0 0 0 (made by HDMS) was spin-coated on the surface formed by the resistive device and pre-baked, and then exposed to develop to form openings for interlayer connection after exposure by 2 50 ° C / 1 hr hardens to form organic insulation. After being printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs, a film of 50 n m Cr was formed by sputtering, and another film of 500 n m C u was formed. This was used as a seed film. A positive liquid photoresist PMER — N — CA 1 0 0 0 (manufactured by Tokyo Chemical Industry Co., Ltd.) was spin-coated on the Cu film. After preheating the hot plate, it was exposed and developed to form a photoresist. cover. 1 0 // m copper plating is performed on the photoresist opening with a current density of 1 A / dm. After that, the photoresist mask was removed, and the copper seed film was removed with a copper etching solution Cobra etching (manufactured by Ebara Densan). In addition, the Cr seed film was removed using a permanganic acid Cr etching solution to form an inductor element and wiring. Then, the liquid polyimide material in which the polyimide fine particles are dispersed is applied to the paper standard of China National Standard (CNS) A4 (210X 297 mm) -42-Printed by the Employees ’Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 560017 A7 _B7____ 5. Description of the invention (4 GH — P 5 0 0 (Hitachi Kasei) Use as a photomask for printing and coating, apply 2 0 t: / 2 5 mi η on the hot plate, and 2 in the thermostatic bath It was hardened at 50 ° C / 1 hr to form an organic insulating material with a stress buffering function. Then, a 50 nm CI * film was formed using a sputtering method, and a 500 nm C u film was formed. This was used as a seed film. A positive liquid photoresist PMER — N — CA 1 0 0 0 (manufactured by Tokyo Chemical Industry Co., Ltd.) was spin-coated on the Cu film. After preheating the hot plate, it was exposed and developed to form a photoresist. The photoresist opening was copper plated with 1 0 // m at a current density of 1 A / dm. Then the photoresist cover was removed, and the copper seed film was removed with copper etching solution Cobra etching (manufactured by Ebara Densan). In addition, the Cr seed film was removed using a permanganic acid Cr etching solution to form wirings and metal terminal portions. The surface formed by the wire and the metal terminal portion was spin-coated with a photosensitive polyimide HD6 0 0 0 (made by HDMS) and pre-baked. After exposure, the image was developed to form an opening portion for interlayer connection. After 2 5 0 ° C / 1 hr is hardened to form an organic insulating material. After electroless gold plating is applied to the surface of the above-mentioned metal terminal portion, a flux is applied to a predetermined portion by a metal cover, and free lead solder balls having a diameter of 2 0 0 // m are arranged. An external electrode is formed by a reflow process. Finally, it is cut into pieces using a cutting device to make a semiconductor connection substrate. In this embodiment, an organic insulating material having a stress buffering function is formed on the metal terminal portion 9 The thermal expansion of the semiconductor connection substrate and the mounting substrate is directly below the PCB when connected to a mounting substrate such as a printed circuit board. This paper applies the Chinese National Standard (CNS) A4 specification (210X 297 mm). ^ -43- ( (Please read the notes on the back before filling out this page)

560017 A7 _B7_ 五、發明説明（4：| (請先閱讀背面之注意事項再填寫本頁) 數的不同而可緩和施加於金屬端子部9及焊球1 〇的熱應 力。藉此，除了依實施例6的效果之外，可得到耐溫度循 環性優異的半導體連接基板。 又，具有應力緩衝功能的有機絕緣材，是被形成在金 屬端子部1 1的正下方也可以。 又，在玻璃基板使用在實施例2所使用的玻璃，則當 然使得半導體連接基板的耐衝擊性等的可靠性更高者。 又，在有機絕緣材使用實施例3的B C B ,則使得電 路的導體損失及介電損失變小，當然能得到信號的通過損 失較小的半導體連接基板。 又，在有機絕緣材使用在實施例4所使用的低介質分 離率樹脂組成物，則使得導體損失及介質損失變小，當然 能低成本地減低通過電路的信號損失。 又，第5圖是本發明是一實施例；各元件的配置是並 未被加以限制者。 (實施例8 ) 經濟部智慧財產局員工消費合作社印製 第6圖是表示本發明的一實施例的半導體連接基板的 剖視圖。在第6圖中，1是玻璃基板（日本電氣玻璃， B L C )，其厚度是〇 · 5 m m。 在第6圖中，2是有機絕緣材，使用感光性聚醯亞胺 (日立化成，HD — 6〇〇0)。 構成在有機絕緣材2內部的電容器元件3是均由下部 電極3 a，介質材料3 b，上部電極3 c所構成的三層構 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） -44- 560017 A7 ________B7 五、發明説明（4 造。下部電極3 a是由c u所構成，介質材料3 b是T a 的氧化物，而上部電極3 c是由C u所構成。 感應器元件4是螺旋型感應器，形成在與上述電容器 元件3的上部電極3 a相同面，其材料是C ^。 電阻兀件5是由電阻器5 c與電極5 a, 5b所構成 。電阻器5c是丁 a與Ti的化合物，電極5a, 5]3是 由C u所構成。 在第6圖中，1 2是有機絕緣材，使用感光性聚酿亞 胺（日立化成，HD — 6000)。 構成在有機絕緣材1 2內部的電容器1 3是均由下部 電極1 3 a，介質材料1 3 b，上部電極1 3 c所構成的 三層構造。下部電極1 3 a是由Cu所構成，介質材料 1 3 b是T a的氧化物，而上部電極1 3 c是由C u所構 成。 感應器元件14是是螺旋型感應器，形成在與上述電 容器元件1 4的上部電極1 4 a相同面，其材料是c u。 電阻元件1 5是由電阻器1 5 c與電極1 5 a， 15b所構成。電阻器15b是Ta與丁i的化合物，電 極1 5 a，1 5 c是由C u所構成。 在第6圖中，構成在有機絕緣材2及1 2內部的各元 件，是經由被塡充在設在玻璃基板1內的貫通孔2 0的導 體部2 1被電氣式地連接，成爲具有所定功能的電路。 在第6圖中，6是使用於與印刷基板等安裝基板連接 的金屬端子部，在本圖的情形是在金屬端子部6上裝載焊 本紙張尺度適用中國國家標準（CNS ) A4規格（210X29*7公釐） (請先閱讀背面之注意事項再填寫本頁) .裝· 、\st» 經濟部智慈財產局員工消費合作社印製 -45- 560017 A7 B7 五、發明説明（4 球7 °又，8是使用於與半導體元件連接的金屬端子部。 以下，對於第6圖的半導體連接基板，說明其製造方 法。 在0 · 5 m m厚度的玻璃基板重疊1 〇 〇 // m的噴砂 用薄膜光阻劑材奧特爾（東京應化所製），經曝光，顯像 過程以形成蝕刻用光阻劑。之後，藉微噴砂法，在玻璃基 板形成貫通孔。之後，剝離光阻薄膜，藉由濺鍍法在玻璃 基板表面及通孔內壁成膜電鍍用種Cr :50nm， Cu :5 0 〇 n m。在該C u膜上重疊電鍍用薄膜光阻劑 Η N 9 2 0 (日立化成所製）之後，藉由鍍銅形成，通路 內部的導通層。之後剝離光阻劑，並剝離電鍍種膜。 在玻璃基板主面上使用濺鍍法成膜5 0 n m C r , 又成膜5 0 0 n m C u，將此作爲種膜。在該C u膜上 旋轉塗布正型液狀光阻劑PMER — N— CA 1 〇 〇 〇 ( 東京應化所製），在熱板進行預烘之後，經曝光，顯像過 程以形成光阻罩。在該光阻開口部以1 A / d m的電流密 度來進行1 0 // m鍍銅。之後除去光阻罩，以銅蝕刻液可 布拉蝕刻（荏原電產所製）除去銅種膜。又，使用過錳酸 系C r蝕刻液來除去C r種膜，以形成下部電極。 然後，作爲障壁膜，藉由濺鍍法形成5 0 n m C r ο 之後，在上述下部電極上藉由濺鍍法將T a 2〇5成膜 成爲5 0 〇 nm厚度。在該Ta2〇5上塗布正型液狀光阻 劑〇F P R 8 0 〇，5 0 0 c p (東京應化所製），經乾 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） ---------裝-- (請先閲讀背面之注意事項再填寫本頁) 、v-口 經濟部智慧財產局g(工消費合作社印製 - 46- 560017 A7 B7 五、發明説明（4i (請先閱讀背面之注意事項再填寫本頁) 燥，曝光，顯像過程，以形成介質材料的光阻罩。之後， 使用C F 4進行乾鈾刻，除去不用部分之後，除去光阻罩， 又以過錳酸系C r蝕刻液蝕刻不用部分的障壁層以形成介 質材料。560017 A7 _B7_ V. Description of the invention (4: | (Please read the precautions on the back before filling in this page) The number of differences can alleviate the thermal stress applied to the metal terminal 9 and the solder ball 1 0. In addition to this, In addition to the effects of Example 6, a semiconductor connection substrate having excellent temperature cycle resistance can be obtained. An organic insulating material having a stress buffering function may be formed directly under the metal terminal portion 11. Also, in glass Of course, the use of the glass used in Example 2 makes the semiconductor connection substrate more reliable in terms of impact resistance and the like. In addition, the use of BCB of Example 3 as an organic insulating material causes the loss of conductors and the dielectric properties of the circuit. The electrical loss is reduced, and of course, a semiconductor connection substrate having a small signal transmission loss can be obtained. In addition, the use of the low-dielectric-separation-rate resin composition used in Example 4 for the organic insulating material reduces the conductor loss and the dielectric loss. Of course, it is possible to reduce the signal loss through the circuit at a low cost. In addition, FIG. 5 is an embodiment of the present invention; the arrangement of each element is not limited. Example 8) Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs, FIG. 6 is a cross-sectional view showing a semiconductor connection substrate according to an embodiment of the present invention. In FIG. 6, 1 is a glass substrate (Japan Electric Glass, BLC), Its thickness is 0.5 mm. In FIG. 6, 2 is an organic insulating material, and a photosensitive polyimide (Hitachi Kasei, HD-60000) is used. The capacitor element 3 included in the organic insulating material 2 It is a three-layer structure composed of a lower electrode 3 a, a dielectric material 3 b, and an upper electrode 3 c. The paper size is applicable to the Chinese National Standard (CNS) A4 specification (210X297 mm) -44- 560017 A7 ________B7 V. Description of the invention (4). The lower electrode 3a is composed of cu, the dielectric material 3b is an oxide of Ta, and the upper electrode 3c is composed of Cu. The inductor element 4 is a spiral type inductor, formed between and The upper electrode 3a of the capacitor element 3 is on the same surface, and its material is C ^. The resistor element 5 is composed of a resistor 5c and electrodes 5a, 5b. The resistor 5c is a compound of buta and Ti, and the electrode 5a 5] 3 is composed of C u. In Figure 6, 1 2 is Photoelectric polyimide (Hitachi Kasei, HD — 6000) is used as the insulating material of the machine. The capacitors 1 3 formed in the organic insulating material 12 are composed of the lower electrode 1 3 a, the dielectric material 1 3 b, and the upper electrode 1 A three-layer structure composed of 3 c. The lower electrode 1 3 a is composed of Cu, the dielectric material 1 3 b is an oxide of T a, and the upper electrode 1 3 c is composed of Cu. The sensor element 14 is The spiral inductor is formed on the same surface as the upper electrode 14a of the capacitor element 14, and the material is cu. The resistance element 15 is composed of a resistor 15 c and electrodes 15 a and 15b. The resistor 15b is a compound of Ta and Ni, and the electrodes 15a and 15c are made of Cu. In FIG. 6, each element included in the organic insulating materials 2 and 12 is electrically connected via a conductor portion 21 filled in a through-hole 20 provided in the glass substrate 1 and has a A circuit with a predetermined function. In Fig. 6, 6 is a metal terminal portion used for connection to a mounting substrate such as a printed circuit board. In the case of this figure, the metal terminal portion 6 is soldered. The paper size is applicable to the Chinese National Standard (CNS) A4 specification (210X29). * 7mm) (Please read the notes on the back before filling this page). ··, \ st »Printed by the Consumer Cooperatives of the Intellectual Property Office of the Ministry of Economic Affairs-45- 560017 A7 B7 V. Description of the invention (4 balls 7 ° Furthermore, 8 is a metal terminal portion used for connection to a semiconductor element. Hereinafter, a method of manufacturing the semiconductor connection substrate shown in FIG. 6 will be described. A glass substrate with a thickness of 0.5 mm is sandblasted at a thickness of 100 // m. A thin-film photoresist material Otell (manufactured by Tokyo Chemical Industry Co., Ltd.) was exposed and developed to form a photoresist for etching. Then, a micro-blast method was used to form through holes in the glass substrate. After that, the photoresist was peeled off. A thin film was formed on the surface of the glass substrate and the inner wall of the through hole by a sputtering method to form Cr: 50 nm and Cu: 50 nm. A thin film photoresist for plating 电镀 N 9 2 0 was superposed on the Cu film. (Made by Hitachi Chemical Co., Ltd.) The conductive layer inside the via. After that, the photoresist is peeled off, and the plating seed film is peeled off. On the main surface of the glass substrate, 50 nm C r is formed by sputtering, and 50 nm C u is formed as the seed. A positive liquid photoresist PMER — N — CA 1000 (manufactured by Tokyo Chemical Industry Co., Ltd.) was spin-coated on the Cu film. After preheating on a hot plate, it was exposed and developed to form a film. Photoresist cover. Copper plating was performed on the photoresist opening at a current density of 1 A / dm at 1 0 // m. The photoresist cover was then removed and removed with copper etching solution Cobra etching (manufactured by Ebara Denso). A copper seed film. The permanganic acid Cr etchant was used to remove the Cr seed film to form a lower electrode. Then, as a barrier film, 50 nm Cr was formed by a sputtering method, and then the lower portion was formed. On the electrode, T a 2 05 was formed into a thickness of 500 nm by a sputtering method. A positive liquid photoresist 0FPR 8 0 0, 5 0 0 cp (Toyo Ina Made), the size of the dried paper is applicable to the Chinese National Standard (CNS) A4 specification (210X297 mm) --------- install-(Please read the note on the back first Please fill in this page again), v-port Intellectual Property Bureau of the Ministry of Economic Affairs (printed by Industrial and Consumer Cooperatives-46- 560017 A7 B7) V. Description of the invention (4i (please read the precautions on the back before filling this page) In the development process, a photoresist mask of a dielectric material is formed. After that, dry uranium engraving is performed using CF 4 to remove the unused part, and then the photoresist mask is removed. The unused part of the barrier layer is etched with a permanganic acid Cr etchant To form a dielectric material.

然後，藉由旋轉塗布感光性聚醯亞胺H D 6 0 0 0 ( 曰立化成所製），在熱板預烘之後，經曝光，顯像過程露 出下部電極上的介質材料。這時候，聚醯亞胺的被覆部開 口成切斷作爲半導體連接基板而用以個片化所使用的劃片 區域相比較位在8 0 // m內側。在氮氣環境中以2 5 0 °C / 2 h r硬化該聚醯亞胺，以形成1 〇 m的有機絕緣材 〇 然後，藉由濺鍍法形成5 0 0 n m T a N膜。在該 上面旋轉正型液狀光阻劑〇F P R 8 Ο Ο，1 Ο Ο c ρ， 進行預烘之後，經曝光，顯像以形成光阻圖案罩。使用該 罩進行C F 4乾蝕刻T a Ν膜。之後剝離光阻劑以形成複數 電阻元件。 經濟部智慧財產局S工消費合作社印製 之後，使用濺鍍法成膜5 Ο n m C r，又成膜 5 Ο Ο n m C u，將此作爲種膜。在該C u膜上旋轉塗 布正型液狀光阻劑PMER — N— CA1 000 (東京應 化所製），在熱板進行預烘之後，經曝光，顯像過程以形 成光阻罩。在該光阻開口部以1 A / d m的電流密度進行 1 0 // m鍍銅。之後除去光阻罩，以銅蝕刻液可布拉蝕刻 (荏原電產所製）除去銅種膜。又，使用過錳酸系C r蝕 刻液除去C r種膜，以形成上部電極及電阻器電極及感應 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） -47- 560017 A7 _B7___ 五、發明説明（4 器元件。 (請先閱讀背面之注意事項再填寫本頁) 在該上部電極及電阻器電極及感應器元件所形成的表 面旋轉塗布感光性聚醯亞胺HD 6 0 0 0 (HDMS所製 )並進行預烤之後，經曝光，顯像形成用以形成焊球的開 口部。這時候，開口成聚醯亞胺的被覆部切斷作爲半導體 連接基板而用以個片化所使用的劃片區域相比較位在8 0 // m內側。又，以2 5 0 °C / 1 h r進行硬化以形成有機 絕緣材。 然後，在玻璃基板背面上使用濺鍍法成膜5 0 n m C r，又成膜5 0 0 n m C u，將此作爲種膜。在該 C u膜上旋轉塗布正型液狀光阻劑Ρ Μ E R - N -C A 1 0 0 0 (東京應化所製），在熱板進行預烘之後， 經曝光，顯像過程以形成光阻罩。在該光阻開口部以1 A / d m的電流密度進行1 0 // m鍍銅。之後除去光阻罩， 以銅蝕刻液可布拉蝕刻（荏原電產所製）除去銅種膜。又 ，使用過錳酸系C r蝕刻液除去C r種膜，以形成下部電 極。 經濟部智慧財產局員工消費合作社印製 然後，作爲障壁膜，藉由濺鍍法形成5 〇 n m c r ο 之後，在上述下部電極上藉由濺鍍法將T a 2〇5成膜 成爲5 0 0 n m厚度。在該T a 2〇5上塗布正型液狀光阻 劑〇F P R 8 0 0，5 0 0 c ρ (東京應化所製），經乾 燥，曝光，顯像過程，以形成介質材料的光阻罩。之後， 使用C F 4進行乾蝕刻，除去不用部分之後，除去光阻罩， 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） -48- 560017 A7 B7 五、發明説明（4 又以過錳酸系c r蝕刻液蝕刻不用部分的障壁層以形成介 質材料。 然後，藉由旋轉塗布感光性聚醯亞胺H D 6 0 0 0 (Then, the spin-coated photosensitive polyimide H D 6 0 0 0 (manufactured by Li Kasei Co., Ltd.) was pre-baked on a hot plate and then exposed to expose the dielectric material on the lower electrode during development. At this time, the coating portion of the polyimide is opened to be cut and used as a semiconductor connection substrate, and the scribe area used for the singulation is located inside 8 0 // m. This polyimide was hardened at 250 ° C / 2 h r in a nitrogen atmosphere to form a 100 m organic insulating material. Then, a 5000 nm T a N film was formed by a sputtering method. On this surface, a positive liquid photoresist OF P R 8 〇 〇, 1 〇 Ο c ρ was pre-baked, and then exposed to develop a photoresist pattern mask. This mask was used to perform C F 4 dry etching of the T a N film. The photoresist is then peeled to form a plurality of resistive elements. After printing by the Industrial and Commercial Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs, a film of 5 〇 n m Cr was formed by sputtering, and a film of 5 OO n m C u was formed. This was used as a seed film. A positive liquid photoresist PMER-N-CA1000 (manufactured by Tokyo Chemical Industries) was spin-coated on the Cu film, and after being pre-baked on a hot plate, it was exposed and developed to form a photoresist mask. 1 0 // m copper plating is performed on the photoresist opening with a current density of 1 A / dm. After that, the photoresist mask was removed, and the copper seed film was removed with a copper etching solution Cobra etching (manufactured by Ebara Densan). In addition, the permanganic acid Cr etching solution is used to remove the Cr film to form the upper electrode and the resistor electrode and the sensor. This paper is applicable to the Chinese National Standard (CNS) A4 specification (210X297 mm) -47- 560017 A7 _B7___ V. Description of the invention (4 device elements. (Please read the precautions on the back before filling in this page) The surface of the upper electrode, resistor electrode and sensor element is spin-coated with photosensitive polyimide HD 6 0 0 0 (manufactured by HDMS) and pre-bake, and after exposure, develop an opening to form a solder ball. At this time, the coating portion that is opened to form a polyimide is cut and used as a semiconductor connection substrate. The dicing area used for the chemical conversion is located inside 8 0 // m. It is hardened at 250 ° C / 1 hr to form an organic insulating material. Then, a film is formed on the back surface of the glass substrate by sputtering. 50 nm C r, and then formed 500 nm Cu, this was used as a seed film. On the Cu film, a positive liquid photoresist PM ER-N -CA 1 0 0 0 (Tokyo (Made by Yinghua), after the hot plate is pre-baked, it is exposed and developed to form Photoresist cover. Copper plating was performed on the photoresist opening at a current density of 1 A / dm at 1 0 // m. After that, the photoresist cover was removed and the copper was removed by copper etching (coated by Ebara Denso). The seed film was removed by using a permanganic acid Cr etching solution to form a lower electrode. It was printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs and used as a barrier film to form 50 nmcr by sputtering. ο Then, T a 2 05 was formed into a thickness of 500 nm by sputtering on the lower electrode. A positive liquid photoresist 0FPR 8 0 0 was coated on the T a 2 05. 5 0 0 c ρ (manufactured by Tokyo Chemical Industry Co., Ltd.) is dried, exposed, and developed to form a photoresist mask for the dielectric material. Then, CF 4 is used for dry etching to remove the unnecessary parts, and then the photoresist mask is removed. This paper size applies the Chinese National Standard (CNS) A4 specification (210X297 mm) -48- 560017 A7 B7 V. Description of the invention (4 The unused part of the barrier layer is etched with a permanganic acid-based CR etchant to form a dielectric material. , Spin-coated photosensitive polyimide HD 6 0 0 0 (

日立化成所製），在熱板預烘之後，經曝光，顯像過程露 出下部電極上的介質材料。這時候，聚醯亞胺的被覆部開 口成切斷作爲半導體連接基板而用以個片化所使用的劃片 區域相比較位在8 0 // m內側。在氮氣環境中以2 5 0 °C / 2 h it硬化該聚醯亞胺，以形成1 〇 // m的有機絕緣材 〇 然後，藉由濺鍍法形成5 0 0 n m T a N膜。在該 上面旋轉正型液狀光阻劑OFPR800，1 0 0 c p , 進行預烘之後，經曝光，顯像以形成光阻圖案罩。使用該 罩進行C F 4乾蝕刻T a N膜。之後剝離光阻劑以形成複數 電阻元件。 之後，使用濺鍍法成膜5 0 n m C r，又成膜 5 0 0 n m C u ,將此作爲種膜。在該C u膜上旋轉塗 布正型液狀光阻劑PMER - N— CA 1 〇 〇 〇 (東京應 經濟部智慧財產局員工消費合作社印製 化所製），在熱板進行預烘之後，經曝光，顯像過程以形 成光阻罩。在該光阻開口部以1 A / d m的電流密度進行 1 0 // m鍍銅。之後除去光阻罩，以銅蝕刻液可布拉蝕刻 (荏原電產所製）除去銅種膜。又，使用過錳酸系C I*蝕 刻液除去C I*種膜，以形成上部電極及電阻器電極及感應 器元件。 在該上部電極及電阻器電極及感應器元件所形成的面 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） -49- 560017 A7 B7 五、發明説明（4 旋轉塗布感光性聚醯亞胺H D 6 0 0 0 ( H D M S所製） 並進行預烤之後，經曝光，顯像形成用以層間連接的開口 部。這時候，開口成聚醯亞胺的被覆部切斷作爲半導體連 接基板而用以個片化所使用的劃片區域相比較位在8 0 // m內側。又，以2 5 0 °C / 1 h r進行硬化以形成有機 絕緣材。 在該有機絕緣材表面爲了形成金屬端子部，成膜電鍍 用種膜Cr :5〇nm， Cu:500nm。在該Cu膜 上旋轉塗布負型液狀光阻材PMER — N - CA 1 0 0 0 (東京應化所製），進行預烘之後，經曝光，顯像而形成 鍍光阻罩之後，藉鍍銅形成1 0 // m的鍍膜之後，作爲障 壁層再形成2 // m的鍍鎳膜。最後，剝離光阻劑並剝離電 鍍種膜，俾形成配線及金屬端子部。 在該金屬端子部所形成的面旋轉塗布感光性聚醯亞胺 HD6000 (HDMS所製）並進行預烘後，經曝光， 顯像形成用以形成焊球的開口部。這時候，開口成聚醯亞 胺的被覆部切斷作爲半導體連接基板而用以個片化所使用 的劃片區域相比較位在8 0 // m內側。又，以2 5 0 °C / 1 h r進行硬化以形成有機絕緣材。 在上述金屬端子部表面施以無電解鍍金處理之後，藉 由金屬罩將銲劑塗布在所定部分之後，排到直徑2 0 0 // m的自由鉛焊球，藉由迴銲處理形成外部電極。 最後，使用切斷裝置切成個片化以製作半導體連接基 板0 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消费合作社印製(Made by Hitachi Chemical Co., Ltd.), after the hot plate is pre-baked, the exposure process reveals the dielectric material on the lower electrode. At this time, the coating portion of the polyimide is opened to be cut and used as a semiconductor connection substrate, and the scribe area used for the singulation is located inside 8 0 // m. The polyimide was hardened at 250 ° C / 2 h in a nitrogen atmosphere to form an organic insulating material of 〇 // m 〇 Then, a 50,000 n m T a N film was formed by a sputtering method. A positive liquid photoresist OFPR800, 100 cp was rotated on the upper surface, and after pre-baking, exposure was performed to develop a photoresist pattern mask. C F 4 dry etching of the T a N film was performed using this mask. The photoresist is then peeled to form a plurality of resistive elements. After that, 50 n m Cr was formed by sputtering, and 500 n m C u was formed again, and this was used as a seed film. On the Cu film, a positive liquid photoresist PMER-N-CA 1000 (made by the Printing Co., Ltd., Employees' Cooperative of Intellectual Property Bureau, Ministry of Economic Affairs, Tokyo) was spin-coated, and after preheating on a hot plate, After exposure, the development process forms a photoresist mask. 1 0 // m copper plating is performed on the photoresist opening with a current density of 1 A / dm. After that, the photoresist mask was removed, and the copper seed film was removed with a copper etching solution Cobra etching (manufactured by Ebara Densan). The C I * seed film was removed using a permanganic acid C I * etching solution to form an upper electrode, a resistor electrode, and a sensor element. The paper size of the surface formed by the upper electrode, the resistor electrode and the sensor element applies the Chinese National Standard (CNS) A4 specification (210X297 mm) -49- 560017 A7 B7 V. Description of the invention (4 Spin coating photosensitive polymer Perylene imine HD 6 0 0 0 (made by HDMS) and pre-baked, and after exposure, develops an opening portion for interlayer connection. At this time, the coating portion opening into polyimide is cut off as a semiconductor connection The dicing area used for slicing the substrate is located inside 8 0 // m. It is hardened at 250 ° C / 1 hr to form an organic insulating material. The surface of the organic insulating material is A metal terminal portion was formed, and a seed film for plating Cr: 50 nm and Cu: 500 nm were formed. A negative liquid photoresist material PMER — N-CA 1 0 0 0 (manufactured by Tokyo Chemical Industry Co., Ltd.) was spin-coated on the Cu film. ), After pre-baking, after exposure and development to form a plated photoresist mask, copper plating is used to form a 10 // m plating film, and then a barrier layer is further formed into a 2 // m nickel plating film. Finally, peeling The photoresist is removed and the plating seed film is peeled off to form wiring and metal terminals. The surface formed by the metal terminal portion is spin-coated with photosensitive polyimide HD6000 (manufactured by HDMS) and pre-baked, and then exposed to develop an opening portion for forming a solder ball. At this time, the opening is formed into a polyfluorene. The coating portion of the imine is cut as a semiconductor connection substrate, and the dicing area used for the dicing is located inside 8 0 // m. It is further hardened at 2 50 ° C / 1 hr to form an organic material. Insulating material: After the surface of the metal terminal part is subjected to electroless gold plating treatment, the flux is applied to a predetermined portion by a metal cover, and then is discharged to a free lead solder ball with a diameter of 2 0 // // m, which is formed by reflow treatment. External electrodes. Finally, use a cutting device to cut into pieces to make semiconductor connection substrates. 0 This paper size applies to China National Standard (CNS) A4 specifications (210X297 mm) (Please read the precautions on the back before filling this page) Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs

-50- 560017 A7 B7 五、發明説明（； 依照本實施例，除了實施例1的效果之外，藉由在具 有貫通孔的玻璃基板的兩面積體薄膜受動元件，比積體於 習知的基板片側者可提高兩倍積體度，成爲更小型的半導 體連接基板。 又，在玻璃基板使用在實施例2所使用的玻璃，則當 然使得半導體連接基板的耐衝擊性等的可靠性更高者。 又，在有機絕緣材使用實施例3的B C B，則使得電 路的導體損失及介電損失變小，當然能得到信號的通過損 失較小的半導體連接基板。 又，在有機絕緣材使用在實施例4所使用的低介質分 離率樹脂組成物，則使得導體損失及介質損失變小，當然 能低成本地減低通過電路的信號損失。 又，第6圖是本發明是一實施例；各元件的配置是並 未被加以限制者。 (實施例9 ) 第7圖是表示本發明的一實施例的半導體連接基板的 剖視圖。在第7圖中，2 2是感光性玻璃基板，2 3是貫 通孔，24是貫通孔內部的導體部。又在第7圖中，感光 性玻璃基板2 2及貫通孔2 3，導體部2 4以外的部分是 與實施例8同樣。 又，第7圖的半導體連接基板之製造方法，是除了下 述的貫通孔之形成法以外爲與實施例8同樣。 在感光性玻璃基板使用L i 2 — A 1 2〇3 — s i〇2 ( 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） (請先閱讀背面之注意事項再填寫本頁) 訂 經濟部智慧財產局S工消費合作社印製 -51 - 560017 A7 B7 五、發明説明（4 (請先閲讀背面之注意事項再填寫本頁) A u，C e )系的感光性玻璃。在感光性玻璃基板主面密 接以C r描繪開孔圖案於玻璃表面的光罩，使H g - X e 燈施以曝光。然後使之顯像，進行結晶化俾得到具有貫通 孔之玻璃基板。 在感光性玻璃中，與使用噴砂等的其他開孔手段的情 形相比較，貫通孔的斷面成爲更垂直的構造，亦即推拔角 度變大，可形成更微細的貫通孔。因此，可形成更高積體 度的元件，與實施例8之情形相比較，即可用大約一半的 面積即可具有同等積體度。 如此地將感光性玻璃使用在基板，除了依實施例8的 效果之外，可得到更高積體度又低成本的半導體連接基板 〇 又，第7圖是本發明是一實施例，各元件的配置是並 未被加以限制者。 (實施例1 0 ) 經濟部智慧財產局員工消費合作社印製 第8圖是表示本發明的一實施例的半導體連接基板的 剖視圖。在第8圖中，1是玻璃基板（日本電氣玻璃， B L C )，其厚度是0 · 5 m m。 在第8圖中，2是有機絕緣材，使用感光性聚醯亞胺 (日立化成，HD — 6000)。 構成在有機絕緣材2的內部的電容器元件，是由C u 所構成的下部電極3 a，由T a的氧化物所構成的介質材 料3 b，由C u所構成的上部電極3 c所成的三層構造的 本紙張尺度適用中國國家標準（CNS ) A4規格（210X29*7公釐） -52- 560017 A7 B7 五、發明説明（4 (請先閲讀背面之注意事項再填寫本頁) 電容器元件3，及由Cu所構成的下部電極3 / a，由聚 醯亞胺所構成的介質材料3 / b，由C u所構成的上部電 極3 > c所成的三層構造的電容器元件3 /所構成。 感應器元件4是螺旋型感應器，其材料是C u。 電阻元件5是由電阻器5 c與電極5 a，5 b所構成 。電阻器5c是Ta與Ti的化合物，電極5a， 5b是 由C u所構成。 在第8圖中，1 2是有機絕緣材，使用感光性聚醯亞 胺（日立化成，HD — 6000)。 構成在有機絕緣材1 2的內部的電容器元件，是由 C u所構成的下部電極1 3 a ,由T a的氧化物所構成的 介質材料1 3 b，由C u所構成的上部電極1 3 c所成的 三層構造的電容器元件1 3，及由C u所構成的下部電極 1 3 / a，由聚醯亞胺所構成的介質材料1 3 > b，由 C u所構成的上部電極1 3 / c所成的三層構造的電容器 元件1 3 /所構成。 感應器元件1 4是螺旋型感應器，其材料是C u。 經濟部智慧財產局員工消費合作社印製 電阻元件1 5是由電阻器1 5b與電極χ 5 a, 15c所構成。電阻器15b是Ta與Ti的化合物，電 極15a， 15c是由Cu所構成。 在第8圖中，構成在有機絕緣材2及1 2內部的各元 件，是經由被塡充在設在玻璃基板1內的貫通孔2 0的導 體部2 1被電氣式地連接，成爲具有所定功能的電路。 在第8圖中，6是使用於與印刷基板等安裝基板連接 ^紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐Ί " -53 - 560017 A7 B7 五、發明説明（5)( (請先閲讀背面之注意事項再填寫本頁) 的金屬端子部，在本圖的情形是在金屬端子部6上裝載焊 球7。又，8是使用於與半導體元件連接的金屬端子部。 以下，對於第8圖的半導體連接基板，說明其製造方 法。 在〇 . 5 m m厚度的玻璃基板重疊1 0 0 // m的噴砂 用薄膜光阻劑材奧特爾（東京應化所製），經曝光，顯像 過程以形成蝕刻用光阻劑。之後，藉微噴砂法，在玻璃基 板形成貫通孔。之後，剝離光阻薄膜，藉由濺鍍法在玻璃 基板表面及通孔內壁成膜電鍍用種Cr:50nm， Cu :5 Ο 0 n m。在該C u膜上重疊電鍍用薄膜光阻劑 HN9 2 0 (日立化成所製）之後，藉由鍍銅形成，通路 內部的導通層。之後剝離光阻劑，並剝離電鍍種膜。 在玻璃基板主面上使用濺鍍法成膜5 Ο n m C r， 又成膜5 Ο Ο n m C u，將此作爲種膜。在該C u膜上 旋轉塗布正型液狀光阻劑PMER — N - CA 1 0 0 0 ( 經濟部智慧財產局員工消費合作社印製 東京應化所製），在熱板進行預烘之後，經曝光，顯像過 程以形成光阻罩。在該光阻開口部以1 A / d m的電流密 度來進行1 0 // m鍍銅。之後除去光阻罩，以銅鈾刻液布 拉蝕刻（荏原電產所製）除去銅種膜。又，使用過錳酸系 C I·蝕刻液除去C I*種膜，以形成下部電極。 然後，作爲障壁膜，藉由濺鍍法形成5 Ο n m C r ο 之後，在上述下部電極上藉由濺鍍法將T a 2 0 5成膜 成爲5 0 0 nm厚度。在該T a 2〇5上塗布正型液狀光阻 本紙張尺度適用中國國家標準（CNS ) A4規格（21〇X29<7公釐） -54- 560017 A7 B7 五、發明説明（4 (請先閲讀背面之注意事項再填寫本頁) 劑〇F P R 8 0 0，5 0 0 c p (東京應化所製），經乾 燥，曝光，顯像過程，以形成介質材料的光阻罩。之後， 使用C F 4進行乾蝕刻，除去不用部分之後，除去光阻罩， 又以過猛酸系C r蝕刻液蝕刻不用部分的障壁層以形成介 質材料。 然後，藉由旋轉塗布感光性聚醯亞胺H D 6 0 0 0 (-50- 560017 A7 B7 V. Description of the invention (According to this embodiment, in addition to the effect of Embodiment 1, by using a thin-film body driven element on a two-area body of a glass substrate having a through-hole, it is better than the conventional one. On the substrate sheet side, the integration can be increased by two times, making it a smaller semiconductor connection substrate. In addition, the use of the glass used in Example 2 for the glass substrate naturally improves the reliability of the semiconductor connection substrate, such as impact resistance. In addition, the use of BCB of Example 3 in the organic insulating material can reduce the conductor loss and dielectric loss of the circuit, and of course, can obtain a semiconductor connection substrate with a small signal loss. Also, the organic insulating material is used in The low-dielectric-separation resin composition used in Example 4 reduces the conductor loss and the dielectric loss, and of course, can reduce the signal loss through the circuit at a low cost. Also, FIG. 6 is an example of the present invention; each The arrangement of the elements is not limited. (Embodiment 9) FIG. 7 is a cross-sectional view showing a semiconductor connection substrate according to an embodiment of the present invention. In FIG. 7, 2 2 is a photosensitive glass substrate, 23 is a through-hole, and 24 is a conductor portion inside the through-hole. In FIG. 7, the photosensitive glass substrate 22 and the through-hole 2 3, and portions other than the conductor portion 24 are Example 8 is the same. The method of manufacturing the semiconductor connection substrate shown in FIG. 7 is the same as that of Example 8 except that the following through-hole formation method is used. The photosensitive glass substrate is L i 2 —A 1 2〇 3 — si〇2 (This paper size applies to the Chinese National Standard (CNS) A4 specification (210X297 mm) (Please read the precautions on the back before filling out this page) Order by the Ministry of Economic Affairs Intellectual Property Bureau S Industry Consumer Cooperatives -51 -560017 A7 B7 V. Description of the invention (4 (Please read the precautions on the back before filling in this page) A u, C e) photosensitive glass. The main surface of the photosensitive glass substrate is closely attached to draw the opening pattern with C r Expose the H g-X e lamp on a mask on the glass surface. Then develop it and crystallize it to obtain a glass substrate with through holes. In photosensitive glass, other openings such as sandblasting are used. Compared with the situation of the means, the breakage of the through hole The structure is more vertical, that is, the pushing angle becomes larger, and finer through-holes can be formed. Therefore, a more integrated element can be formed. Compared with the case of Example 8, about half the area can be used. The use of the photosensitive glass in the substrate as described above, in addition to the effect of Example 8, a semiconductor connection substrate with higher integration and lower cost can be obtained. Also, FIG. 7 shows the present invention. This is an embodiment, and the arrangement of each element is not limited. (Embodiment 10) Printed by the Consumer Cooperative of Intellectual Property Bureau, Ministry of Economic Affairs FIG. 8 is a cross-sectional view showing a semiconductor connection substrate according to an embodiment of the present invention . In FIG. 8, 1 is a glass substrate (Japan Electric Glass, B L C), and its thickness is 0. 5 mm. In FIG. 8, 2 is an organic insulating material, and a photosensitive polyimide (Hitachi Kasei, HD — 6000) is used. The capacitor element included in the organic insulating material 2 is a lower electrode 3 a made of Cu, a dielectric material 3 b made of Ta oxide, and an upper electrode 3 c made of Cu. The three-layer structure of this paper is applicable to Chinese National Standard (CNS) A4 specifications (210X29 * 7 mm) -52- 560017 A7 B7 V. Description of the invention (4 (Please read the precautions on the back before filling this page) Capacitor Element 3, and a three-layer capacitor element made of Cu, a lower electrode 3 / a made of Cu, a dielectric material 3 / b made of polyimide, and an upper electrode 3 made of Cu > c 3 / constituted. The inductor element 4 is a spiral type inductor whose material is Cu. The resistive element 5 is composed of a resistor 5 c and electrodes 5 a, 5 b. The resistor 5 c is a compound of Ta and Ti, The electrodes 5a and 5b are made of Cu. In Fig. 8, 12 is an organic insulating material, and a photosensitive polyimide (Hitachi Kasei, HD — 6000) is used. It is formed inside the organic insulating material 12 The capacitor element is a lower electrode 1 3 a made of Cu and a dielectric made of T a oxide. Material 1 3 b, a three-layer capacitor element 13 made of an upper electrode 1 3 c made of Cu, and a lower electrode 1 3 / a made of Cu, made of polyimide Dielectric material 1 3 > b, a three-layer capacitor element 1 3 / composed of an upper electrode 1 3 / c made of Cu. The inductor element 14 is a spiral type inductor, and the material is C. The printed resistive element 15 by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs is composed of a resistor 15b and electrodes χ 5a, 15c. The resistor 15b is a compound of Ta and Ti, and the electrodes 15a and 15c are made of Cu In FIG. 8, each element included in the organic insulating materials 2 and 12 is electrically connected through a conductor portion 21 filled in a through hole 20 provided in the glass substrate 1. , Becomes a circuit with a predetermined function. In Figure 8, 6 is used to connect to a printed circuit board and other mounting substrates. ^ The paper size applies the Chinese National Standard (CNS) A4 specification (210X297 mmΊ " -53-560017 A7 B7. Fifth, the description of the invention (5) ((Please read the precautions on the back before filling in this page) In the case of this figure, a solder ball 7 is mounted on the metal terminal portion 6. In addition, 8 is a metal terminal portion used for connection with a semiconductor element. Hereinafter, a manufacturing method of the semiconductor connection substrate of FIG. 8 will be described. On a glass substrate having a thickness of 0.5 mm, an ultra-thin thin film photoresist material Otter (manufactured by Tokyo Chemical Industry Co., Ltd.) of 1 0 0 // m was superimposed, and after exposure and development, a photoresist for etching was formed. Thereafter, a through-hole was formed in the glass substrate by a micro-blasting method. After that, the photoresist film was peeled off, and a Cr: 50 nm and Cu: 50 nm were formed on the surface of the glass substrate and the inner wall of the through hole by a sputtering method. A thin film photoresist HN9 2 0 (manufactured by Hitachi Chemical Co., Ltd.) was stacked on the Cu film, and then formed by copper plating to form a conductive layer inside the via. After that, the photoresist is peeled off, and the plating seed film is peeled off. On the main surface of the glass substrate, a film of 5 0 n m C r was formed by sputtering, and a film of 5 0 n m C u was formed, and this was used as a seed film. On this Cu film, a positive liquid photoresist PMER — N-CA 1 0 0 (printed by Tokyo Yinghua Co., Ltd., an employee consumer cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs) was spin-coated, and after preheating on a hot plate, After exposure, the development process forms a photoresist mask. The photoresist opening was subjected to 1 0 // m copper plating at a current density of 1 A / dm. After that, the photoresist mask was removed, and the copper seed film was removed by copper uranium etching solution cloth etching (manufactured by Ebara Densan). In addition, a C I * seed film was removed using a permanganic acid C I · etching solution to form a lower electrode. Then, as a barrier film, 5 0 n m C r ο was formed by a sputtering method, and then T a 2 0 5 was formed into a thickness of 50 nm by a sputtering method on the lower electrode. A positive liquid photoresist is applied on the T a 2 05. The paper size is in accordance with the Chinese National Standard (CNS) A4 specification (21 × 29 < 7 mm) -54- 560017 A7 B7 V. Description of the invention (4 (please Read the precautions on the back before filling in this page) Agent 〇FPR 8 0,5 0 0 cp (manufactured by Tokyo Chemical Co., Ltd.), dried, exposed, and developed to form a photoresist mask for the dielectric material. After that, CF 4 was used for dry etching to remove the unnecessary portion, and then the photoresist mask was removed, and then the barrier layer of the unused portion was etched with a peracid-based Cr etchant to form a dielectric material. Then, photosensitive polyimide was spin-coated. HD 6 0 0 0 (

日立化成所製），在熱板預烘之後，經曝光，顯像過程露 出下部電極上的介質材料。這時候，聚醯亞胺的被覆部開 口成切斷作爲半導體連接基板而用以個片化所使用的劃片 區域相比較位在8 0 // m內側。在氮氣環境中以2 5 0 °C / 2 h r硬化該聚醯亞胺，以形成1 〇 # m的有機絕緣材 〇 然後，藉由濺鍍法形成5 0 0 n m T a N膜。在該 上面旋轉正型液狀光阻劑OFPR800, 1 〇 〇 c p , 進行預烘之後，經曝光，顯像以形成光阻圖案罩。使用該 罩進行C F 4乾蝕刻T a N膜。之後剝離光阻劑以形成複數 電阻元件。 經濟部智慧財產局員工消費合作社印製 之後，使用濺鍍法成膜5 0 n m C I：，又成膜 5 Ο 0 n m C u，將此作爲種膜。在該C u膜上旋轉塗 布正型液狀光阻劑PMER - N— CA 1 〇 0 0 (東京應 化所製），在熱板進行預烘之後，經曝光，顯像過程以形 成光阻罩。在該光阻開口部以1 A / d m的電流密度進行 1 Ο μ m鍍銅。之後除去光阻罩，以銅蝕刻液可布拉蝕刻 (荏原電產所製）除去銅種膜。又，使用過錳酸系c r蝕 本紙張尺度適用中國國家標準（CNS ) A4規格（21〇Χ：297公釐） -55- 560017 A7 B7 五、發明説明（4 刻液除去c r種膜，以形成上部電極及電阻器電極及感應 器元件。 (請先閱讀背面之注意事項再填寫本頁) 在該上部電極及電阻器電極及感應器元件所形成的面 旋轉塗布感光性聚醯亞胺H D 6 0 0 0 ( H D M S所製） 並進行預烤之後，經曝光，顯像形成用以形成焊球的開口 部。這時候，開口成聚醯亞胺的被覆部切斷作爲半導體連 接基板而用以個片化所使用的劃片區域相比較位在8 0 // m內側。又，以2 5 0 °C / 1 h r進行硬化以形成有機 絕緣材。 然後，在玻璃基板背面上使用濺鍍法成膜5 0 n m C r，又成膜5 Ο 0 n m C u，將此作爲種膜。在該 C u膜上旋轉塗布正型液狀光阻劑？！^[£11 — 1^一 C A 1 0 0 0 (東京應化所製），在熱板進行預烘之後， 經曝光，顯像過程以形成光阻罩。在該光阻開口部以1 A / d m的電流密度進行1 0 // m鍍銅。之後除去光阻罩， 經濟部智慈財產局員工消费合作社印製 以銅蝕刻液可布拉蝕刻（荏原電產所製）除去銅種膜。又 ，使用過錳酸系C r蝕刻液除去C I*種膜，以形成下部電 極。 然後，作爲障壁膜，藉由濺鍍法形成5 Ο n m C r ο 之後，在上述下部電極上藉由濺鍍法將T a 2 Ο 5成膜 成爲5 0 0 nm厚度。在該T a 2〇5上塗布正型液狀光阻 劑〇F P R 8 0 0，5 0 0 c p (東京應化所製），經乾 燥，曝光，顯像過程，以形成介質材料的光阻罩。之後， 本紙張尺度適用中國國家標準（CMS ) A4規格（210X297公釐） -56- 560017 A7 ____B7___ 五、發明説明（ (請先閱讀背面之注意事項再填寫本頁) 使用C F 4進行乾蝕刻，除去不用部分之後，除去光阻罩， 又以過錳酸系C r蝕刻液蝕刻不用部分的障壁層以形成介 質材料。(Made by Hitachi Chemical Co., Ltd.), after the hot plate is pre-baked, the exposure process reveals the dielectric material on the lower electrode. At this time, the coating portion of the polyimide is opened to be cut and used as a semiconductor connection substrate, and the scribe area used for the singulation is located inside 8 0 // m. The polyimide was hardened at 250 ° C / 2 h r in a nitrogen atmosphere to form a 10 # m organic insulating material. Then, a 500 nm T a N film was formed by a sputtering method. A positive liquid photoresist OFPR800, 100 cp was rotated on this surface, and after pre-baking, it was developed by exposure to form a photoresist pattern mask. C F 4 dry etching of the T a N film was performed using this mask. The photoresist is then peeled to form a plurality of resistive elements. After being printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs, a film thickness of 50 n m C I was formed by sputtering, and another film of 0 0 n m C u was formed, which was used as a seed film. A positive liquid photoresist PMER-N-CA 1 0 0 0 (made by Tokyo Chemical Industry Co., Ltd.) was spin-coated on the Cu film. After preheating the hot plate, it was exposed and developed to form a photoresist. cover. 10 μm copper plating was performed on the photoresist opening with a current density of 1 A / dm. After that, the photoresist mask was removed, and the copper seed film was removed with a copper etching solution Cobra etching (manufactured by Ebara Densan). In addition, the size of the paper etched using permanganic acid-based cr is applicable to Chinese National Standard (CNS) A4 specifications (21 ×: 297 mm) -55- 560017 A7 B7 V. Description of the invention (4 etch solution to remove the cr seed film to form Upper electrode and resistor electrode and sensor element. (Please read the precautions on the back before filling out this page.) Photosensitive polyimide HD 6 is spin-coated on the surface formed by the upper electrode, resistor electrode and sensor element. 0 0 0 (manufactured by HDMS) After pre-baking, after exposure, an opening portion for forming a solder ball is developed. At this time, the covering portion of the opening formed into polyimide is cut and used as a semiconductor connection substrate. The dicing area used for each sheet is relatively located inside 8 0 // m. Furthermore, it is hardened at 250 ° C / 1 hr to form an organic insulating material. Then, a sputtering method is used on the back surface of the glass substrate. Film formation of 50 nm C r and film formation of 5 0 0 nm C u was used as a seed film. A positive liquid photoresist was spin-coated on the Cu film? ^ [£ 11 — 1 ^ CA 1 0 0 0 (manufactured by Tokyo Chemical Industry Co., Ltd.), after pre-baking on a hot plate, exposure and development Process to form a photoresist cover. Copper is plated at 1 0 // m with a current density of 1 A / dm at the opening of the photoresist. After that, the photoresist cover is removed and printed with copper etching by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economy. The copper seed film was removed by liquid cobra etching (manufactured by Ebara Densan). The CI * seed film was removed using a permanganic acid Cr etching solution to form a lower electrode. Then, as a barrier film, a sputtering method was used. After forming 5 0 nm C r ο, T a 2 0 5 was formed into a thickness of 50 nm by sputtering on the lower electrode. A positive liquid photoresist was coated on the T a 2 05. 〇FPR 8 0,5 0 0 cp (manufactured by Tokyo Chemical Industry Co., Ltd.), dried, exposed, and developed to form a photoresist mask for the dielectric material. After that, this paper standard applies the Chinese National Standard (CMS) A4 specification (210X297 mm) -56- 560017 A7 ____B7___ 5. Description of the invention ((Please read the precautions on the back before filling in this page) Use CF 4 for dry etching, remove the unused parts, remove the photoresist mask, and then use manganese. The acidic Cr etchant etches an unused portion of the barrier layer to form a dielectric material.

然後，藉由旋轉塗布感光性聚醯亞胺H D 6 0 0 〇 ( 曰立化成所製），在熱板預烘之後，經曝光，顯像過程露 出下部電極上的介質材料。這時候，聚醯亞胺的被覆部開 口成切斷作爲半導體連接基板而用以個片化所使用的劃片 區域相比較位在8 0 // m內側。在氮氣環境中以2 5 0 °C / 2 h r硬化該聚醯亞胺，以形成1 〇 // m的有機絕緣材 〇 然後，藉由濺鍍法形成5 0 0 n m T a N膜。在該 上面旋轉正型液狀光阻劑〇F P R 8 0 0， 1 0 0 c p， 進行預烘之後，經曝光，顯像以形成光阻圖案罩。使用該 罩進行C F 4乾蝕刻T a N膜。之後剝離光阻劑以形成複數 電阻元件。 之後，使用濺鍍法成膜5 0 n m C r，又成膜 經濟部智慈財產局員工消費合作社印製 5 0 0 n m C u，將此作爲種膜。在該C ιι膜上旋轉塗 布正型液狀光阻劑PMER — N— CA 1 0 0 0 (東京應 化所製），在熱板進行預烘之後，經曝光，顯像過程以形 成光阻罩。在該光阻開口部以1 A / d m的電流密度進行 1 0 // m鍍銅。之後除去光阻罩，以銅蝕刻液可布拉蝕刻 (荏原電產所製）除去銅種膜。又，使用過錳酸系C r蝕 刻液除去C r種膜，以形成上部電極及電阻器電極及感應 器元件。 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） -57- 560017 Μ _Β7_ 五、發明説明（5^ (請先閲讀背面之注意事項再填寫本頁) 在該上部電極及電阻器電極及感應器元件所形成的面 旋轉塗布感光性聚醯亞胺H D 6 0 0 0 ( H D M S所製） 並進行預烤之後，經曝光，顯像形成用以層間連接的開口 部。這時候，開口成聚醯亞胺的被覆部切斷作爲半導體連 接基板而用以個片化所使用的劃片區域相比較位在8 0 // m內側。又，以2 5 0 / 1 h r進行硬化以形成有機 絕緣材。 在該有機絕緣材表面爲了形成金屬端子部，成膜電鍍 用種膜 Cr : 5〇nm, Cu : 500nm。在該 Cu 膜 上旋轉塗布負型液狀光阻材PMER - N— CA 1 〇 〇 〇 (東京應化所製），進行預烘之後，經曝光，顯像而形成 鍍光阻罩之後，藉鍍銅形成1 0 // m的鍍膜之後，作爲障 壁層再形成2 // m的鍍鎳膜。最後，剝離光阻劑並剝離電 鍍種膜，俾形成配線及金屬端子部。 經濟部智慧財產局員工消費合作社印製 在該金屬端子部所形成的面旋轉塗布感光性聚醯亞胺 H D 6 0 0 0 ( H D M S所製）並進行預烘後，經曝光， 顯像形成用以形成焊球的開口部。這時候，開口成聚醯亞 胺的被覆部切斷作爲半導體連接基板而用以個片化所使用 的劃片區域相比較位在8 0 // m內側。又，以2 5 0 °C / 1 h r進行硬化以形成有機絕緣材。 在上述金屬端子部表面施以無電解鍍金處理之後，藉 由金屬罩將銲劑塗布在所定部分之後，排列直徑2 0 0 // m的自由鉛焊球，藉由迴銲處理形成外部電極。 最後，使用切斷裝置切成個片化以製作半導體連接基 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公ϋ ~ -58- 560017 A7 _B7 i、發明説明（& 板。 如此地，將聚醯亞胺等介質常數較低的有機材料與 T a氧化物等介質常數較高的無機材料一起使用作爲介質 材料，即可精確度優異地製作較小電容値的電容器，可提 高電路的可靠性，可擴展可對應的電容値。且將介質材料 作成與覆蓋元件周圍的絕緣材相同材料，除了依實施例8 的效果之外，可用更簡便又低成本的處理加以製造。 又，在玻璃基板使用在實施例2所使用的玻璃，則當 然使得半導體連接基板的耐衝擊性等的可靠性更高者。 又，在玻璃基板使用在實施例9所使用的感光性玻璃 ，當然可得到更高積體度又低成本的半導體連接基板。 又，在有機絕緣材使用實施例3的B C B，則使得電 路的導體損失及介電損失變小，當然能得到信號的通過損 失較小的半導體連接基板。 又，在有機絕緣材使用在實施例4所使用的低介質分 離率樹脂組成物，則使得導體損失及介質損失變小，當然 能低成本地減低通過電路的信號損失。 又，第8圖是本發明是一實施例；各元件的配置是並 未被加以限制者。 (實施例1 1 ) 第9圖是表示本發明的一實施例的半導體連接基板的 剖視圖。在第9圖中，1是玻璃基板（日本電氣玻璃， BLC)，其厚度是〇 · 5mm。 本紙張尺度適用中國國家標準（CNS ) A4規格（210Χ297公釐） c請先閱讀背面之注意事項再填寫本頁)Then, the photosensitive polyfluorene imide HD 600 (made by Lihwa Kasei) was spin-coated, and after pre-baking on a hot plate, exposure was performed to expose the dielectric material on the lower electrode during development. At this time, the coating portion of the polyimide is opened to be cut and used as a semiconductor connection substrate, and the scribe area used for the singulation is located inside 8 0 // m. This polyimide was hardened at 250 ° C / 2 h r in a nitrogen environment to form an organic insulating material of 〇 // m 〇 Then, a 5,000 n m T a N film was formed by a sputtering method. The positive liquid photoresist OF P R 8 0, 100 c p was rotated on this surface, and after pre-baking, it was exposed and developed to form a photoresist pattern cover. C F 4 dry etching of the T a N film was performed using this mask. The photoresist is then peeled to form a plurality of resistive elements. After that, a film thickness of 50 n m Cr was formed by sputtering, and another film was printed by the Consumer Cooperative of the Intellectual Property Office of the Ministry of Economic Affairs to print 500 n m C u as the seed film. A positive liquid photoresist PMER — N — CA 1 0 0 0 (manufactured by Tokyo Chemical Industry Co., Ltd.) was spin-coated on the C ι film. After preheating the hot plate, it was exposed and developed to form a photoresist. cover. 1 0 // m copper plating is performed on the photoresist opening with a current density of 1 A / dm. After that, the photoresist mask was removed, and the copper seed film was removed with a copper etching solution Cobra etching (manufactured by Ebara Densan). In addition, the Cr seed film was removed using a permanganic acid Cr etching solution to form an upper electrode, a resistor electrode, and an inductor element. This paper size applies to Chinese National Standard (CNS) A4 specification (210X297 mm) -57- 560017 Μ _Β7_ V. Description of the invention (5 ^ (Please read the precautions on the back before filling this page) In the upper electrode and resistor The surface formed by the electrodes and the sensor element was spin-coated with photosensitive polyimide HD 6 0 0 (made by HDMS) and pre-baked, and then exposed to form an opening for connection between layers. At this time, The coating portion with the opening made of polyimide is cut off as a semiconductor connection substrate, and the dicing area used for singulation is located inside 8 0 // m. It is hardened at 2 50/1 hr to An organic insulating material is formed. In order to form a metal terminal portion on the surface of the organic insulating material, a seed film for plating, Cr: 50 nm, Cu: 500 nm, is formed. A negative liquid photoresist PMER-N is spin-coated on the Cu film. — CA 1 〇〇〇〇 (made by Tokyo Chemical Industry Co., Ltd.), after pre-baking, after exposure and development to form a photoresist mask, copper plating to form a 10 // m coating film, and then forming it as a barrier layer 2 // m nickel-plated film. Finally, peel off the photoresist and Isolate the plating seed film to form wiring and metal terminals. The employee's cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs prints on the surface formed by the metal terminals and spin-coated photosensitive polyimide HD 6 0 0 0 (made by HDMS). After pre-baking, after exposure, an opening portion for forming a solder ball is developed. At this time, the coating portion that is opened to form a polyimide is cut off and used as a semiconductor connection substrate for dicing. The area is comparatively located inside 8 0 // m. Furthermore, it is hardened at 250 ° C / 1 hr to form an organic insulating material. After the surface of the metal terminal is subjected to electroless gold plating, the metal cover After the flux is applied to the predetermined part, free lead solder balls with a diameter of 2 0 // m are arranged, and external electrodes are formed by reflow processing. Finally, the cutting device is used to cut into pieces to make semiconductor connections. National Standard (CNS) A4 specification (210X297mm ~ -58- 560017 A7 _B7 i, invention description (& board.) In this way, organic materials such as polyimide with a lower dielectric constant and T a oxide medium often The use of higher inorganic materials together as a dielectric material can produce capacitors with smaller capacitance 精确 with excellent accuracy, which can improve the reliability of the circuit, expand the corresponding capacitance 値, and make the dielectric material to cover the surrounding components. The same material as the insulating material can be manufactured with simpler and lower-cost processing in addition to the effect of Example 8. In addition, the use of the glass used in Example 2 for the glass substrate naturally makes the semiconductor connection substrate resistant to impact. Those with higher reliability. In addition, by using the photosensitive glass used in Example 9 for the glass substrate, it is a matter of course that a semiconductor connection substrate with higher integration and lower cost can be obtained. In addition, the use of B C B of Example 3 as the organic insulating material can reduce the conductor loss and dielectric loss of the circuit, and of course, a semiconductor connection substrate with a small signal loss can be obtained. Furthermore, the use of the low-dielectric-separation resin composition used in Example 4 for the organic insulating material reduces the conductor loss and the dielectric loss, and of course, it is possible to reduce the signal loss through the circuit at a low cost. Fig. 8 shows an embodiment of the present invention; the arrangement of the elements is not limited. (Embodiment 11) Fig. 9 is a sectional view showing a semiconductor connection substrate according to an embodiment of the present invention. In FIG. 9, 1 is a glass substrate (Japan Electric Glass, BLC), and its thickness is 0.5 mm. This paper size applies to Chinese National Standard (CNS) A4 specification (210 × 297 mm) c. Please read the notes on the back before filling this page)

經濟部智慧財產局員工消費合作社印製 -59- 560017 A7 --- B7 五、發明説明（4 在第9圖中，2是有機絕緣材，使用感光性聚醯亞胺 (日立化成，HD—6〇〇〇)。 構成在有機絕緣材2的內部的電容器元件，是由C u 所構成的下部電極3 a，由τ a的氧化物所構成的介質材 料3 b，由C u所構成的上部電極3 c所成的三層構造的 電容器元件3，及由CU所構成的下部電極3 / a，由聚 醯亞胺所構成的介質材料3 - b，由C u所構成的上部電 極3 / c所成的三層構造的電容器元件3 /所構成❶ 在第9圖中，1 2是有機絕緣材，使用感光性聚醯亞 胺（日立化成，HD - 6000)。 感應器元件1 4是螺旋型感應器，其材料是C u。 電阻元件1 5是由電阻器1 5 b與電極1 5 a， 15c所構成。電阻器15b是Ta與Ti的化合物，電 極15a， 15b是由Cu所構成。 在第9圖中，構成在有機絕緣材2及1 2內部的各元 件，是經由被塡充在設在玻璃基板1內的貫通孔2 〇的導 體部2 1被電氣式地連接，成爲具有所定功能的電路。 在第9圖中，6是使用於與印刷基板等安裝基板連接 的金屬端子部，在本圖的情形是在金屬端子部6上裝載焊 球7 °又，8是使用於與半導體元件連接的金屬端子部。 以下，對於第9圖的半導體連接基板，說明其製造方 法。 在0 · 5 m m厚度的玻璃基板重疊1 〇 〇 /z m的噴砂 用薄膜光阻劑材奧特爾（東京應化所製），經曝光，顯像 本紙張尺度適用中國國家標準（CNS ) A4規格（210X 297公釐） ------澤-- (請先閲讀背面之注意事項再填寫本頁) 、一一ά 經濟部智慈財產局員工消費合作社印製Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs-59- 560017 A7 --- B7 V. Description of the invention (4 In Figure 9, 2 is an organic insulating material, using photosensitive polyimide (Hitachi Chemicals, HD- 6〇〇〇). The capacitor element formed inside the organic insulating material 2 is a lower electrode 3 a made of Cu, a dielectric material 3 b made of τ a oxide, and Cu made of Capacitor element 3 of three-layer structure formed by upper electrode 3 c, lower electrode 3 / a composed of CU, dielectric material 3-b composed of polyimide, and upper electrode 3 composed of Cu / c is a three-layer capacitor element formed by / c. In Fig. 9, 12 is an organic insulating material and a photosensitive polyimide (Hitachi Kasei, HD-6000) is used. Inductor element 1 4 It is a spiral inductor whose material is Cu. Resistive element 15 is composed of resistor 15b and electrodes 15a and 15c. Resistor 15b is a compound of Ta and Ti, and electrodes 15a and 15b are made of Cu In FIG. 9, each element included in the organic insulating materials 2 and 12 is provided in the The conductor portion 21 of the through-hole 20 in the glass substrate 1 is electrically connected to form a circuit having a predetermined function. In FIG. 9, reference numeral 6 is a metal terminal portion used to connect to a mounting substrate such as a printed circuit board. In the figure, solder balls 7 ° are mounted on the metal terminal portion 6, and 8 is a metal terminal portion used for connection with a semiconductor element. Hereinafter, a method of manufacturing the semiconductor connection substrate of FIG. 9 will be described. A glass substrate with a thickness of 5 mm was overlapped with a 1000 / zm thin-film photoresist material Otter (manufactured by Tokyo Chemical Industry Co., Ltd.). After exposure, it was developed. This paper is in accordance with China National Standard (CNS) A4 (210X 297 mm) ------ Ze-(Please read the notes on the back before filling out this page), one by one printed by the Consumer Cooperatives of the Intellectual Property Office of the Ministry of Economic Affairs

-60- 560017 kl B7_ 五、發明説明（ 過程以形成蝕刻用光阻劑。之後，藉微噴砂法，在玻璃基 板形成貫通孔。之後，剝離光阻薄膜，藉由濺鍍法在玻璃 基板表面及通孔內壁成膜電鍍用種C r : 5 0 nm，C U :5 0 0 n m。在該C u膜上重疊電鍍用薄膜光阻劑 Η N 9 2 0 (日立化成所製）之後，藉由鍍銅形成，通路 內部的導通層。之後剝離光阻劑，並剝離電鍍種膜。 在玻璃基板主面上使用濺鍍法成膜5 0 n m C r , 又成膜5 0 0 n m C u，將此作爲種膜。在該C u膜上 旋轉塗布負型液狀光阻劑PMER - N — CA 1 0 0 0 ( 東京應化所製），在熱板進行預烘之後，經曝光，顯像過 程以形成光阻罩。在該光阻開口部以1 A / d m的電流密 度進行1 0 // m鍍銅。之後除去光阻罩，以銅蝕刻液布拉 蝕刻（荏原電產所製）除去銅種膜。又，使用過錳酸系 C r鈾刻液除去C r種膜，以形成下部電極。 然後，作爲障壁膜，藉由濺鍍法形成5 0 n m C r ο 之後，在上述下部電極上藉由濺鍍法將T a 2〇5成膜 成爲5 0 0 nm厚度。在該T a 2〇5上塗布正型液狀光阻 劑〇F P R 8 0 0，5 0 0 c p (東京應化所製），經乾 燥，曝光，顯像過程，以形成介質材料的光阻罩。之後， 使用C F 4進行乾蝕刻，除去不用部分之後，除去光阻罩， 又以過錳酸系C r蝕刻液蝕刻不用部分的障壁層以形成介 質材料。 然後，藉由旋轉塗布感光性聚醯亞胺H D 6 0 0 〇 ( ^紙張尺度適用中國國家標準（CNS ) Α4規格（210X297公釐） ' -61 - (請先閲讀背面之注意事項再填寫本頁) -一口 線 經濟部智慧財產局員工消費合作社印製 560017 經濟部智慧財產局員工消費合作社印製 ΑΊ Β7五、發明説明（士 曰立化成所製），在熱板預烘之後，經曝光，顯像過程露 出下部電極上的介質材料。這時候，聚醯亞胺的被覆部開 □成切斷作爲半導體連接基板而用以個片化所使用的劃片 區域相比較位在8 0 // m內側。在氮氣環境中以2 5 0 °C / 2 h I*硬化該聚醯亞胺，以形成1 〇 # m的有機絕緣材 〇 之後，使用濺鍍法成膜5 0 n m C r，又成膜 5 〇 〇 n m C u，將此作爲種膜。在該C u膜上旋轉塗 布正型液狀光阻劑PMER - N—CA 1 〇 0 0 (東京應 化所製），在熱板進行預烘之後，經曝光，顯像過程以形 成光阻罩。在該光阻開口部以1 A / d m的電流密度進行 1 0 // m鍍銅。之後除去光阻罩，以銅蝕刻液可布拉蝕刻 (荏原電產所製）除去銅種膜。又，使用過錳酸系C r鈾 刻液除去C r種膜，以形成上部電極。 在該上部電極形成的表面旋轉塗布感光性聚醯亞胺 H D 6 0 0 0 ( H D M S所製）並進行預烤之後，經曝光 ，顯像形成用以形成焊球的開口部。這時候，開口成聚醯 亞胺的被覆部切斷作爲半導體連接基板而用以個片化所使 用的劃片區域相比較位在8 0 // m內側。又，以2 5 0 °C / 1 h r進行硬化以形成有機絕緣材。 然後，在玻璃基板背面藉由濺鍍法形成5 0 0 n m T a N膜。在該上面旋轉正型液狀光阻劑〇F P R 8 0 0 ，1 0 0 c p，進行預烘之後，經曝光，顯像以形成光阻 圖案罩。使用該罩進行C F 4乾蝕刻T a N膜。之後剝離光 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） (請先閲讀背面之注意事項再填寫本育) -裝· 、11 線 -62- 560017 A7 B7 五、發明説明（士 阻劑以形成複數電阻元件。 然後，使用濺鍍法成膜5 0 n m C r，又成膜 5 〇 0 n m C u，將此作爲種膜。在該C u膜上旋轉塗 布正型液狀光阻劑PMER — N— CA 1 0 0 0 (東京應 化所製），在熱板進行預烘之後，經曝光，顯像過程以形 成光阻罩。在該光阻開口部以1 A / d m的電流密度進行 1 〇 m鍍銅。之後除去光阻罩，以銅蝕刻液可布拉蝕刻 (荏原電產所製）除去銅種膜。又，使用過錳酸系C r蝕 刻液除去C r種膜，以形成電阻體電極及感應器元件。 在該電阻器電極及感應器元件所形成的面旋轉塗布感 光性聚醯亞胺H D 6 0 0 0 ( H D M S所製）並進行預烤 之後，經曝光，顯像形成用以層間連接的開口部。這時候 ，開口成聚醯亞胺的被覆部切斷作爲半導體連接基板而用 以個片化所使用的劃片區域相比較位在8 0 // m內側。又 ，以2 5 0 °C / 1 h r進行硬化以形成有機絕緣材。 在該有機絕緣材表面爲了形成金屬端子部，成膜電鍍 用種膜C r : 5〇n m，C u : 5 0 0 n m。在該C u膜 上旋轉塗布負型液狀光阻材PMER - N—CA 1 0 0 0 (東京應化所製），進行預烘之後，經曝光，顯像而形成 鍍光阻罩之後，藉鍍銅形成1 0 // m的鍍膜之後，作爲障 壁層再形成2 // m的鍍鎳膜。最後，剝離光阻劑並剝離電 鍍種膜，俾形成配線及金屬端子部。 在該金屬端子部所形成的面旋轉塗布感光性聚醯亞胺 HD6000 (HDMS所製）並進行預烘後，經曝光， 本紙張尺度適用中國國家標準（CMS ) A4規格（210X 297公釐） (請先閲讀背面之注意事項再填寫本頁) 、*!! 經濟部智慧財產局員工消費合作社印製 -63- 560017 A7 B7 五、發明説明（6)| (請先閱讀背面之注意事項再填寫本頁) 顯像形成用以形成焊球的開口部。這時候，開口成聚醯亞 胺的被覆部切斷作爲半導體連接基板而用以個片化所使用 的劃片區域相比較位在8 0 // m內側。又，以2 5 0 °C / 1 h r進行硬化以形成有機絕緣材。 在上述金屬端子部表面施以無電解鍍金處理之後，藉 由金屬罩將銲劑塗布在所定部分之後，排列直徑2 0 0 // m的自由鉛焊球，藉由迴銲處理形成外部電極。 最後，使用切斷裝置切成個片化以製作半導體連接基 板。 如此地，藉由在不同面配置各元件，可減小各元件間 的耦合等影響，可將寄生電容抑制成較小之故，因而可提 高元件的自諧振頻率，除了依實施例8的效果之外，可得 到更高性能的半導體連接基板。 又，在玻璃基板使用在實施例2所使用的玻璃，則當 然使得半導體連接基板的耐衝擊性等的可靠性更高者。 又，在玻璃基板使用在實施例9所使用的感光性玻璃 ，當然可得到更高積體度又低成本的半導體連接基板。 經濟部智¾財1局8工消費合作社印製 又，在有機絕緣材使用實施例3的B C B，則使得電 路的導體損失及介電損失變小，當然能得到信號的通過損 失較小的半導體連接基板。 又，在有機絕緣材使用在實施例4所使用的低介質分 離率樹脂組成物，則使得導體損失及介質損失變小，當然 能低成本地減低通過電路的信號損失。 又，第9圖是本發明是一實施例；各元件的配置是並 本紙張尺度適用中國國家標準（CNS ) A4規格（210Χ297公釐） -64- 560017 A7 _______B7 五、發明説明（4 未被加以限制者。 (請先閲讀背面之注意事項再填寫本頁) (實施例1 2 ) 第1 0圖是表示本發明的一實施例的半導體連接基板 的剖視圖。在第1 0圖中，1是玻璃基板（日本電氣玻璃 ，BLC),其厚度是 〇.5mrn。 在第1 0圖中，2是有機絕緣材，使用感光性聚醯亞 胺（日立化成，HD — 6000)。 構成在有機絕緣材2的內部的電容器元件，是由C u 所構成的下部電極3 a，由丁 a的氧化物所構成的介質材 料3 b，由C u所構成的上部電極3 c所成的三層構造的 電容器元件3，及由C u所構成的下部電極3 > a，由聚 醯亞胺所構成的介質材料3 / b，由C u所構成的上部電 極3 / c所成的三層構造的電容器元件3 /所構成。 感應器元件4是螺旋型感應器，其材料是Cu。 經濟部智慧財產局員工消費合作社印紫 電阻元件5是由電阻器5b與電極5a， 5c所構成 。電阻器5b是丁 a與Ti的化合物，而電極5 a, 5b 是由C u所構成。 在第1 0圖中，1 2是有機絕緣材，使用感光性聚醯 亞胺（日立化成，HD — 6000)。 構成在有機絕緣材1 2的內部的電容器元件，是由 C u所構成的下部電極1 3 a，由T a的氧化物所構成的 介質材料1 3 b，由C u所構成的上部電極1 3 c所成的 三層構造的電容器元件1 3，及由C u所構成的下部電極 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） -65- 560017 A7 B7 _ 五、發明説明（4 1 3 / a，由聚醯亞胺所構成的介質材料1 3 / b，由 C u所構成的上部電極1 3 / c所成的三層構造的電容器 元件1 3 /所構成。 感應器元件1 4是螺旋型感應器，其材料是C u ° 電阻元件1 5是由電阻器1 5b與電極1 5 a， 1 5 c所構成。電阻器1 5b是Ta與Ti的化合物，電 極15a，15b是由Cu所構成。 在第1 0圖中，構成在有機絕緣材2及1 2內部的各 元件，是經由被塡充在設在玻璃基板1內的貫通孔2 0的 導體部2 1被電氣式地連接，成爲具有所定功能的電路。 在第1 0圖中，6是使用於與印刷基板等安裝基板連 接的金屬端子部，在本圖的情形是在金屬端子部6上裝載 焊球7。又，8是使用於與半導體元件連接的金屬端子部 〇 以下，對於第1 0圖的半導體連接基板，說明其製造 方法。 在0 · 5 m m厚度的玻璃基板重疊1 0 0 // m的噴砂 用薄膜光阻劑材奧特爾（東京應化所製），經曝光，顯像 過程以形成蝕刻用光阻劑。之後，藉微噴砂法，在玻璃基 板形成貫通孔。之後，剝離光阻薄膜，藉由濺鍍法在玻璃 基板表面及通孔內壁成膜電鍍用種膜C I· : 5 0 n m， C u : 5 0 0 n m。在該C u膜上重疊電鍍用薄膜光阻劑 Η N 9 2 0 (日立化成所製）之後，藉由鍍銅形成，通路 內部的導通層。之後剝離光阻劑，並剝離電鍍種膜。 本纸張尺度適用中國國家標準（CNS ) Α4規格（210Χ297公釐） (請先閱讀背面之注意事項再填寫本頁) •裝· 、1Τ 經濟部智慧財產局員工消費合作社印製 -66- 560017 A7 B7 五、發明説明（6)4 (請先閱讀背面之注意事項再填寫本頁) 在玻璃基板主面上使用濺鍍法成膜5 0 n m C r， 又成膜5 Ο 0 n m C ια，將此作爲種膜。在該C u膜上 旋轉塗布負型液狀光阻劑PMER — N-CAIOOO ( 東京應化所製），在熱板進行預烘之後，經曝光，顯像過 程以形成光阻罩。在該光阻開口部以1 A / d m的電流密 度進行1 0 // m鍍銅。之後除去光阻罩，以銅蝕刻液布拉 蝕刻（荏原電產所製）除去銅種膜。又，使用過錳酸系 C r蝕刻液除去C r種膜，以形成下部電極。 然後，作爲障壁膜，藉由濺鍍法形成5 0 n m C r ο 之後，在上述下部電極上藉由濺鍍法將T a 2 Ο 5成膜 成爲5 0 0 nm厚度。在該Τ a 2〇5上塗布正型液狀光阻 劑OFPR800，500cp (東京應化所製），經乾 燥，曝光，顯像過程，以形成介質材料的光阻罩。之後， 使用C F 4進行乾蝕刻，除去不用部分之後，除去光阻罩， 又以過錳酸系C r蝕刻液蝕刻不用部分的障壁層以形成介 質材料。 經濟部智慈財產局員工消費合作社印製 然後，藉由旋轉塗布感光性聚醯亞胺H D 6 0 0 0 ( 曰立化成所製），在熱板預烘之後，經曝光，顯像過程露 出下部電極上的介質材料。這時候，聚醯亞胺的開口端部 開口成比下部電極端部位於2 0 # m內側。在氮氣環境中 以2 5 0 °C / 2 h r硬化該聚醯亞胺，以形成1 〇 μ m的 有機絕緣材。 之後，使用濺鍍法成膜5 0 n m C r，又成膜 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） ’ '~~ -67- 560017 A7 _B7_ 五、發明説明（& (請先閲讀背面之注意事項再填寫本頁) 5 0 0 n m C u，將此作爲種膜。在該C u膜上旋轉塗 布正型液狀光阻劑PMER - N—CA 1 0 0 0 (東京應 化所製），在熱板進行預烘之後，經曝光，顯像過程以形 成光阻罩。在該光阻開口部以1 A / d m的電流密度進行 1 0 μ m鍍銅。之後除去光阻罩，以銅蝕刻液可布拉蝕刻 (荏原電產所製）除去銅種膜。又，使用過錳酸系C r蝕 刻液除去C r種膜，以形成上部電極。 在該上部電極所形成的面旋轉塗布感光性聚醯亞胺 HD6000 (HDMS所製）並進行預烤之後，經曝光 ，顯像形成用以層間連的開口部。又，以2 5 0 °C / 1 h r進行硬化以形成有機絕緣材。 然後，藉由濺鍍法形成5 0 0 n m T a N膜。在該 上面旋轉正型液狀光阻劑OFPR800，1 0 0 c p , 進行預烘之後，經曝光，顯像以形成光阻圖案罩。使用該 罩進行C F 4乾蝕刻T a N膜。之後剝離光阻劑以形成複數 電阻元件。 經濟部智慧財產局員工消費合作社印製 之後，使用濺鍍法成膜5 0 n m C r，又成膜 5 0 0 n m C u，將此作爲種膜。在該C u膜上旋轉塗 布正型液狀光阻劑PMER — N— CA 1 〇 〇 〇 (東京應 化所製），在熱板進行預烘之後，經曝光，顯像過程以形 成光阻罩。在該光阻開口部以1 A / d m的電流密度進行 1 0 // m鍍銅。之後除去光阻罩，以銅蝕刻液可布拉蝕刻 (荏原電產所製）除去銅種膜。又，使用過鐘酸系C r倉虫 刻液除去C r種膜，以形成電阻器電極。 本紙張尺度適用中國國家標準（CMS ) A4規格（210X297公釐） -68- 560017 A7 B7 五、發明説明（4 在該電阻器電極所形成的面旋轉塗布感光性聚醯亞胺 H D 6 0 0 0 ( H D M S所製）並進行預烤之後，經曝光 ，顯像形成以層間連接的開口部，並以2 5 0 t / 1 h r 進行硬化以形成有機絕緣材。 之後，使用濺鍍法成膜5 0 n m C r，又成膜 5 0 0 n m C u，將此作爲種膜。在該C u膜上旋轉塗 布正型液狀光阻劑PMER — N— CA 1 〇 〇 〇 (東京應 化所製），在熱板進行預烘之後，經曝光，顯像過程以形 成光阻罩。在該光阻開口部以1 A / d m的電流密度進行 1 0 // m鍍銅。之後除去光阻罩，以銅蝕刻液可布拉蝕刻 (荏原電產所製）除去銅種膜。又，使用過錳酸系C r蝕 刻液除去C r種膜，以形成感應器元件。 在該感應器元件所形成的表面旋轉塗布感光性聚醯亞 胺H D 6 0 0 0 ( H D M S所製）並進行預烤之後，經曝 光，並以2 5 0 °C / 1 h I：進行硬化以形成有機絕緣材。 經濟部智慧財產局員工消費合作社印製 然後，在玻璃基板背面上使用濺鍍法成膜5 0 n m C r，又成膜5 0 0 n m C u，將此作爲種膜。在該 C ια膜上旋轉塗布正型液狀光阻劑PMER - N -C A 1 〇 〇 〇 (東京應化所製），在熱板進行預烘之後， 經曝光，顯像過程以形成光阻罩。在該光阻開口部以1 A / d m的電流密度進行1 0 // m鍍銅。之後除去光阻罩， 以銅蝕刻液可布拉蝕刻（荏原電產所製）除去銅種膜。又 ，使用過錳酸系C r鈾刻液除去C r種膜，以形成下部電 極。 本紙張尺度適用中國國家標準（CNS ) A4規格（210X29*7公釐） -69- 560017 A7 ___B7_ 五、發明説明（& 然後，作爲障壁膜，藉由濺鍍法形成5 〇 n m C r ο (請先閱讀背面之注意事項再填寫本頁) 之後，在上述下部電極上藉由濺鍍法將T a 2 0 5成膜 成爲5 0 0 nm厚度。在該T a 2〇5上塗布正型液狀光阻 劑〇F P R 8 0 0，5 0 0 c p (東京應化所製），經乾 燥，曝光，顯像過程，以形成介質材料的光阻罩。之後， 使用C F 4進行乾蝕刻，除去不用部分之後，除去光阻罩， 又以過錳酸系C r蝕刻液蝕刻不用部分的障壁層以形成介 質材料。 然後，藉由旋轉塗布感光性聚醯亞胺H D 6 0 0 0 ( 曰立化成所製），在熱板預烘之後，經曝光，顯像過程露 出下部電極上的介質材料。這時候，聚醯亞胺的開口端部 開口成比下部電極端部位於2 〇 // m內側。在氮氣環境中 以2 5 0 °C / 2 h r硬化該聚醯亞胺，以形成1 〇 # m的 有機絕緣材。 經濟部智慧財產局員工消費合作社印製 之後，使用濺鍍法成膜5 0 n m C r，又成膜 5 0 0 n m C u，將此作爲種膜。在該C u膜上旋轉塗 布正型液狀光阻劑PMER — N— CA 1 0 0 〇 (東京應 化所製），在熱板進行預烘之後，經曝光，顯像過程以形 成光阻罩。在該光阻開口部以1 A / d m的電流密度進行 1 0 // m鍍銅。之後除去光阻罩，以銅蝕刻液可布拉蝕刻 (荏原電產所製）除去銅種膜。又，使用過錳酸系C r蝕 刻液除去C r種膜，以形成上部電極。 在該上部電極所形成的面旋轉塗布感光性聚醯亞胺 本紙張尺度適用中國國家標準（CNS ) Λ4規格（2】0X297公釐） -70- 560017 /ΚΊ ___ Β7____ 五、發明説明（& H D 6 0 0 0 ( H D M S所製）並進行預烤之後，經曝光 ，顯像形成用以層間連接的開口部，並以2 5 0 °C / 1 h r進行硬化以形成有機絕緣材。 然後，藉由濺鍍法形成5 0 0 n m T a N膜。在該 上面旋轉正型液狀光阻劑〇F P R 8 0 0， 1 〇 〇 c P， 進行預烘之後，經曝光，顯像以形成光阻圖案罩。使用該 罩進行C F 4乾蝕刻T a N膜。之後剝離光阻劑以形成複數 電阻元件。 之後，使用濺鍍法成膜5 0 n m C i*，又成膜 5 0 0 n m C u ,將此作爲種膜。在該C u膜上旋轉塗 布正型液狀光阻劑PMER — N— CA 1 0 0 0 (東京應 化所製），在熱板進行預烘之後，經曝光，顯像過程以形 成光阻罩。在該光阻開口部以1 A / d m的電流密度進行 1〇// m鍍銅。之後除去光阻罩，以銅蝕刻液可布拉鈾刻 (荏原電產所製）除去銅種膜。又，使用過錳酸系C r蝕 刻液除去C r種膜，以形成上部電極及電阻器電極及感應 器元件。 在該上部電極及電阻器電極及感應器元件所形成的面 旋轉塗布感光性聚醯亞胺H D 6 0 0 0 ( H D M S所製） 並進行預烤之後，經曝光，顯像形成用以層間連接的開口 部，並以2 5 0 °C / 1 h r進行硬化以形成有機絕緣材。 之後，使用濺鍍法成膜5 0 n m C r，又成膜 5 0 0 n m C u，將此作爲種膜。在該C u膜上旋轉塗 布正型液狀光阻劑Ρ Μ E R — N — C A 1 〇 〇 〇 (東京應 本纸張尺度適用中國國家標準（CNS ) A4規格（21 OX297公釐） _ 一~ -71 - (請先閱讀背面之注意事項再填寫本頁) 訂 經齊部智慧財產局員工消費合作社印製 560017 A7 ____ B7 五、發明説明（ 化所製），在熱板進行預烘之後，經曝光，顯像過程以形 成光阻罩。在該光阻開口部以1 A / d m的電流密度進行 1 0 // m鍍銅。之後除去光阻罩，以銅蝕刻液可布拉蝕刻 (荏原電產所製）除去銅種膜。又，使用過錳酸系C r蝕 刻液除去C r種膜，以形成感應器元件及配線及金屬端子 〇 在該金屬端子部及感應器元件及配線所形成的面旋轉 塗布感光性聚醯亞胺HD6000 (HDMS所製）並進 行預烤之後，經曝光，顯像形成用以形成焊球的開口部， 並以2 5 0 °C / 1 h r進行硬化以形成有機絕緣材。 在上述金屬端子部表面施以無電解鍍金處理之後，藉 由金屬罩將銲劑塗布在所定部分之後，排列直徑2 0 0 // m的自由鉛焊球，藉由迴銲處理形成外部電極。 最後，使用切斷裝置切成個片化以製作半導體連接基 板。 如此地，電容器元件及感應器元件及電阻元件從分別 所配置的一邊的玻璃基板表面以不同的複數距離所配置之 故，因而可用更高精確度積體各元件，除了依實施例8的 效果之外，可得到更小型的半導體連接基板。 又，在玻璃基板使用在實施例2所使用的玻璃，則當 然使得半導體連接基板的耐衝擊性等的可靠性更高者。 又，在玻璃基板使用在實施例9所使用的感光性玻璃 ，當然可得到更高積體度又低成本的半導體連接基板。 又，在有機絕緣材使用實施例3的B C B，則使得電 本紙張尺度適用中國國家標準（CNS ) A4規格（210乂29?公嫠) ~ -72- (請先閱讀背面之注意事項再填寫本頁)-60- 560017 kl B7_ 5. Description of the invention (Process to form photoresist for etching. After that, through holes are formed in the glass substrate by micro-blasting. After that, the photoresist film is peeled off and the surface of the glass substrate is sputtered. And Cr: 50 nm and CU: 500 nm for film formation and plating on the inner wall of the through hole. A thin film photoresist for plating ΗN 9 2 0 (made by Hitachi Chemical Co., Ltd.) was superimposed on the Cu film. It is formed by copper plating and a conductive layer inside the via. After that, the photoresist is peeled off and the plating seed film is peeled off. On the main surface of the glass substrate, 50 nm Cr is formed by sputtering, and 50 nm C is formed. u, this is used as a seed film. A negative liquid photoresist PMER-N — CA 1 0 0 0 (manufactured by Tokyo Chemical Industry Co., Ltd.) was spin-coated on the Cu film, and preheated by a hot plate and exposed. During the development process, a photoresist mask is formed. Copper is plated with 1 0 // m at a current density of 1 A / dm at the opening of the photoresist. After that, the photoresist mask is removed and etched with a copper etchant (Ebara Denso) (Manufactured) to remove the copper seed film. In addition, the Cr seed film was removed using a permanganic acid Cr uranium etching solution to form a lower electrode. Then, it was used as a barrier. After forming a wall film of 50 nm C r ο by a sputtering method, T a 2 05 was formed into a thickness of 50 nm by a sputtering method on the lower electrode. On this T a 2 05 A positive liquid photoresist 〇FPR 8 0,500 cp (manufactured by Tokyo Chemical Industry Co., Ltd.) was applied, and dried, exposed, and developed to form a photoresist mask for the dielectric material. Then, CF 4 was used After dry etching, the photoresist mask is removed, and then the barrier layer of the unused portion is etched with a permanganic acid Cr etchant to form a dielectric material. Then, photosensitive polyimide HD 6 0 0 is applied by spin coating. 〇 (^ Paper size applies Chinese National Standard (CNS) A4 specification (210X297mm) '-61-(Please read the precautions on the back before filling out this page)-Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs Α7 B7 V. Description of the invention (made by Shihua Lihua Chemical Co., Ltd.) After the hot plate is pre-baked, the exposure process reveals the dielectric material on the lower electrode. At this time, the The coating of the imine is opened and cut. The scribe area used for the singulation of the semiconductor-connected substrate is located inside 8 0 // m. The polyfluorene imine is hardened at 250 ° C / 2 h I * in a nitrogen atmosphere to form After the organic insulating material with a size of 10 μm was used, 50 nm Cr was formed by sputtering, and 500 nm C u was further formed as a seed film. A positive solution was spin-coated on the Cu film. The photoresist PMER-N-CA 1 0 0 0 (made by Tokyo Chemical Industry Co., Ltd.) is pre-baked on a hot plate, and then exposed and developed to form a photoresist mask. 1 0 // m copper plating is performed on the photoresist opening with a current density of 1 A / dm. After that, the photoresist mask was removed, and the copper seed film was removed with a copper etching solution Cobra etching (manufactured by Ebara Densan). In addition, the Cr seed film was removed by using a permanganic acid Cr uranium etching solution to form an upper electrode. A photosensitive polyfluorene imide H D 6 0 0 0 (made by H D M S) was spin-coated on the surface formed by the upper electrode and pre-baked, and then exposed to form an opening portion for forming a solder ball. At this time, the coating portion opened into polyfluorene imine is cut off as a semiconductor connection substrate and the dicing area used for the singulation is located inside 8 0 // m. Furthermore, it was hardened at 250 ° C / 1 h r to form an organic insulating material. Then, a 500 n m T a N film was formed on the back surface of the glass substrate by a sputtering method. A positive liquid photoresist OF P R 8 0 0, 100 c p was rotated on the upper surface, and after pre-baking, exposure was performed to develop a photoresist pattern mask. C F 4 dry etching of the T a N film was performed using this cover. After peeling off the paper, the size of the paper applies the Chinese National Standard (CNS) A4 specification (210X297 mm) (please read the precautions on the back before filling in this education)-Packing ·, 11-line-62- 560017 A7 B7 A resist is used to form a plurality of resistance elements. Then, 50 nm C r is formed by sputtering, and 500 nm C u is formed as a seed film. A positive type liquid is spin-coated on the Cu film. The photoresist PMER — N— CA 1 0 0 0 (manufactured by Tokyo Chemical Industry Co., Ltd.) is pre-baked on a hot plate, and then exposed and developed to form a photoresist mask. The photoresist opening is 1 A Copper plating was performed at a current density of 10 dm / dm. After that, the photoresist mask was removed, and the copper seed film was removed with a copper etchant Cobra etching (manufactured by Ebara Densan Co., Ltd.). Furthermore, it was removed using a permanganic acid Cr etchant. A film of Cr to form a resistor electrode and a sensor element. A photosensitive polyimide HD 6 0 0 0 (made by HDMS) was spin-coated on the surface formed by the resistor electrode and the sensor element and pre-baked. Then, after exposure, an opening portion for connection between layers is developed. At this time, the opening portion is formed. The coated part of the sulfonimide is cut as a semiconductor connection substrate, and the scribe area used for singulation is located inside 8 0 // m. It is hardened at 2 50 ° C / 1 hr to form Organic insulating material. In order to form a metal terminal portion on the surface of the organic insulating material, a seed film for electroplating Cr: 50 nm, Cu: 50 nm is formed. A negative liquid light is spin-coated on the Cu film. PMER-N—CA 1 0 0 0 (manufactured by Tokyo Chemical Industry Co., Ltd.), after pre-baking, exposure and development to form a photoresist mask, copper plating to form a 1 0 // m coating, As a barrier layer, a 2 // m nickel-plated film was formed. Finally, the photoresist was peeled off and the plating seed film was peeled off to form wiring and metal terminal portions. A photosensitive polyfluorene was spin-coated on the surface formed by the metal terminal portions. Amine HD6000 (made by HDMS) and pre-baking, and after exposure, this paper size applies Chinese National Standard (CMS) A4 specification (210X 297 mm) (Please read the precautions on the back before filling this page), *! Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs-63- 560017 A7 B7 V. Description of Invention ( 6) | (Please read the precautions on the back before filling in this page.) The openings for forming solder balls are developed for imaging. At this time, the coating part that is opened into polyimide is cut off and used as a semiconductor connection substrate. The dicing area used for the slicing is located inside 8 0 // m. It is hardened at 250 ° C / 1 hr to form an organic insulating material. The surface of the metal terminal is subjected to electroless gold plating. After that, a flux is applied to a predetermined portion by a metal cover, and free lead solder balls with a diameter of 200 / m are arranged, and external electrodes are formed by a reflow process. Finally, it is cut into pieces using a cutting device to form a semiconductor connection substrate. In this way, by arranging the components on different surfaces, the influence of coupling and the like between the components can be reduced, and the parasitic capacitance can be suppressed to be small. Therefore, the self-resonance frequency of the components can be increased, in addition to the effect according to the eighth embodiment. In addition, a higher-performance semiconductor connection substrate can be obtained. In addition, when the glass used in Example 2 is used for the glass substrate, the reliability of the impact resistance and the like of the semiconductor connection substrate is naturally made higher. In addition, by using the photosensitive glass used in Example 9 for the glass substrate, it is a matter of course that a semiconductor connection substrate with higher integration and lower cost can be obtained. Printed by the Ministry of Economic Affairs, the 1st Bureau of Finance, the 8th Industrial Cooperative, and the use of the BCB of Example 3 in the organic insulating material, which reduces the conductor loss and dielectric loss of the circuit. Of course, it is possible to obtain a semiconductor with a smaller signal loss. Connect the substrate. Furthermore, the use of the low-dielectric-separation resin composition used in Example 4 for the organic insulating material reduces the conductor loss and the dielectric loss, and of course, it is possible to reduce the signal loss through the circuit at a low cost. In addition, Figure 9 is an example of the present invention; the configuration of each element is based on the Chinese paper standard (CNS) A4 (210 × 297 mm) -64- 560017 A7 _______B7 V. Description of the invention (4) (Please read the precautions on the back before filling this page) (Embodiment 12) Figure 10 is a cross-sectional view of a semiconductor connection substrate according to an embodiment of the present invention. In Figure 10, 1 It is a glass substrate (Nippon Electric Glass, BLC), and its thickness is 0.5 mrn. In Fig. 10, 2 is an organic insulating material, and a photosensitive polyimide (Hitachi Kasei, HD — 6000) is used. The capacitor element inside the insulating material 2 is a three-layer structure composed of a lower electrode 3 a composed of Cu, a dielectric material 3 b composed of an oxide of D a, and an upper electrode 3 c composed of Cu. Structured capacitor element 3, and lower electrode 3 made of Cu > a, a dielectric material 3 / b made of polyimide, and upper layer 3 / c made of Cu Structured capacitor element 3 /. Inductor element 4 is a spiral type inductor The material is Cu. The purple consumer resistive element 5 printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs is composed of a resistor 5b and electrodes 5a, 5c. The resistor 5b is a compound of buta and Ti, and the electrodes 5 a, 5b are It is made of Cu. In Fig. 10, 12 is an organic insulating material, and a photosensitive polyimide (Hitachi Kasei, HD — 6000) is used. The capacitor element included in the organic insulating material 12 is A three-layer capacitor element 1 3 composed of a lower electrode 1 3 a made of Cu, a dielectric material 1 3 b made of Ta oxide, and an upper electrode 1 3 c made of Cu. And the lower electrode made of Cu. The paper size is applicable to Chinese National Standard (CNS) A4 specification (210X297 mm) -65- 560017 A7 B7 _ V. Description of the invention (4 1 3 / a, by Polyimide The dielectric material 1 3 / b is composed of a three-layer capacitor element 1 3 / composed of an upper electrode 13 / c made of Cu. The inductor element 14 is a spiral type inductor, and the material is C u ° The resistive element 15 is composed of a resistor 15b and electrodes 15a, 1c. The resistor 15b A compound of Ta and Ti, and the electrodes 15a and 15b are made of Cu. In FIG. 10, each element included in the organic insulating materials 2 and 12 is filled in the glass substrate 1 through being filled. The conductor portion 21 of the through hole 20 is electrically connected to form a circuit having a predetermined function. In FIG. 10, 6 is a metal terminal portion used for connection to a mounting substrate such as a printed circuit board. In the case of this figure A solder ball 7 is mounted on the metal terminal portion 6. Reference numeral 8 denotes a metal terminal portion to be connected to a semiconductor element. Hereinafter, a method of manufacturing the semiconductor connection substrate shown in FIG. 10 will be described. A 1 0 0 // m thick sandblasting thin film photoresist material Otell (manufactured by Tokyo Chemical Industry Co., Ltd.) was superimposed on a glass substrate having a thickness of 0.5 m. After exposure and development, a photoresist for etching was formed. Thereafter, a through-hole was formed in the glass substrate by a micro-blasting method. After that, the photoresist film is peeled off, and a seed film for electroplating C I ·: 50 nm and Cu: 50 nm are formed on the surface of the glass substrate and the inner wall of the through hole by a sputtering method. A thin film photoresist 电镀 N 9 2 0 (manufactured by Hitachi Chemical Co., Ltd.) was overlaid on the Cu film, and then formed by copper plating to form a conductive layer inside the via. After that, the photoresist is peeled off, and the plating seed film is peeled off. This paper size applies the Chinese National Standard (CNS) A4 specification (210 × 297 mm) (Please read the precautions on the back before filling this page) • Packing · 1T Printed by the Intellectual Property Bureau of the Ministry of Economic Affairs Consumer Cooperatives -66- 560017 A7 B7 V. Description of the invention (6) 4 (Please read the precautions on the back before filling in this page) On the main surface of the glass substrate, a film of 50 nm C r was formed by sputtering, and a film of 5 0 nm C ια was formed. This is used as a seed film. A negative liquid photoresist PMER — N-CAIOOO (manufactured by Tokyo Chemical Industry Co., Ltd.) was spin-coated on the Cu film, and after preheating on a hot plate, it was exposed and developed to form a photoresist mask. 1 0 // m copper plating was performed on the photoresist opening with a current density of 1 A / dm. After that, the photoresist mask was removed, and the copper seed film was removed with a copper etching solution (Ebara Densan Co., Ltd.). The Cr seed film was removed using a permanganic acid Cr etching solution to form a lower electrode. Then, as a barrier film, 50 n m C r ο was formed by a sputtering method, and T a 2 0 5 was formed into a thickness of 50 nm by a sputtering method on the lower electrode. A positive liquid photoresist OFPR800, 500 cp (manufactured by Tokyo Chemical Industry Co., Ltd.) was coated on this ta 2 05, and dried, exposed, and developed to form a photoresist mask for the dielectric material. After that, dry etching is performed using C F 4 to remove the unused portion, and then the photoresist mask is removed, and the unused portion of the barrier layer is etched with a permanganic acid Cr etchant to form a dielectric material. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs, and then spin-coated photosensitive polyimide HD 6 0 0 0 (made by Lih Kasei). After preheating on a hot plate, it is exposed after exposure and the development process is exposed. Dielectric material on the lower electrode. At this time, the open end of the polyimide is opened to be inside 20 m from the lower electrode end. The polyimide was hardened at 250 ° C / 2 h r in a nitrogen atmosphere to form an organic insulating material of 10 μm. After that, a film thickness of 50 nm C r was formed using the sputtering method, and the paper size was applied to the Chinese National Standard (CNS) A4 (210X297 mm). '' ~~ -67- 560017 A7 _B7_ ; (Please read the precautions on the back before filling in this page) 5 0 0 nm Cu as the seed film. Spin coating positive liquid photoresist PMER-N—CA 1 0 0 on this Cu film 0 (manufactured by Tokyo Chemical Industry), after preheating the hot plate, and exposing and developing to form a photoresist mask. The photoresist openings are copper plated at 10 μm at a current density of 1 A / dm. After that, the photoresist mask was removed, and the copper seed film was removed with copper etching solution Cobra etching (manufactured by Ebara Densen). The Cr seed film was removed using a permanganic acid Cr etching solution to form an upper electrode. The surface formed by the upper electrode was spin-coated with photosensitive polyimide HD6000 (manufactured by HDMS) and pre-baked, and then exposed by exposure to form an opening for interlayer connection. At 25 ° C / It was hardened for 1 hr to form an organic insulating material. Then, a 500 nm T a N film was formed by a sputtering method. Liquid photoresist OFPR800, 100 cp, after pre-baking, developed by exposure to develop a photoresist pattern cover. Using this cover, CF 4 dry-etches the T a N film. The photoresist is then peeled off to form a plurality Resistive element. After printing by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs, 50 nm Cr was formed by sputtering, and 50 nm C u was formed as a seed film. The Cu film was rotated. A positive liquid photoresist PMER — N — CA 1000 (manufactured by Tokyo Chemical Industry Co., Ltd.) was applied. After preheating the hot plate, it was exposed and developed to form a photoresist mask. The photoresist was opened in the photoresist. The part was copper-plated at 1 0 // m at a current density of 1 A / dm. After that, the photoresist mask was removed, and the copper seed film was removed with copper etching solution Cobra etching (manufactured by Ebara Denshin). Also, bellic acid was used The C r worm insect liquid removes the C r seed film to form the resistor electrode. This paper size applies the Chinese National Standard (CMS) A4 specification (210X297 mm) -68- 560017 A7 B7 V. Description of the invention (4 The surface of the resistor electrode is spin-coated with photosensitive polyimide HD 6 0 0 0 (made by HDMS) and After pre-baking, after exposure, the openings connected by layers were developed and hardened at 250 t / 1 hr to form an organic insulating material. Then, 50 nm C r was formed by sputtering, and A film of 5000 nm Cu was formed, and this was used as a seed film. A positive liquid photoresist PMER — N — CA 1 00 (made by Tokyo Chemical Industry Co., Ltd.) was spin-coated on the Cu film, and the plate was heated. After pre-baking, it is exposed and developed to form a photoresist mask. 1 0 // m copper plating is performed on the photoresist opening with a current density of 1 A / dm. After that, the photoresist mask was removed, and the copper seed film was removed with a copper etching solution Cobra etching (manufactured by Ebara Densan). The Cr seed film was removed by using a permanganic acid Cr etching solution to form an inductor element. A photosensitive polyimide HD 6 0 0 0 (made by HDMS) was spin-coated on the surface formed by the sensor element and pre-baked, and then exposed and cured at 250 ° C / 1 h I: To form an organic insulating material. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. Then, a film of 50 n m Cr was formed on the back surface of the glass substrate by sputtering, and a film of 500 n m C u was formed. This was used as a seed film. A positive liquid photoresist PMER-N-CA 1000 (manufactured by Tokyo Chemical Industry Co., Ltd.) was spin-coated on the C ια film. After preheating the hot plate, it was exposed and developed to form a photoresist. cover. 1 0 // m copper plating was performed on the photoresist opening with a current density of 1 A / d m. After that, the photoresist mask was removed, and the copper seed film was removed with a copper etching solution Cobra etching (manufactured by Ebara Densan). In addition, the Cr seed film was removed by using a permanganic acid Cr uranium etching solution to form a lower electrode. This paper size applies the Chinese National Standard (CNS) A4 specification (210X29 * 7 mm) -69- 560017 A7 ___B7_ V. Description of the invention (& Then, as a barrier film, 50 nm C r is formed by sputtering method. (Please read the precautions on the back before filling in this page.) After that, T a 2 0 5 was formed into a thickness of 50 nm by sputtering on the lower electrode. Type liquid photoresist 〇FPR 8 0,500 cp (manufactured by Tokyo Chemical Industry Co., Ltd.), dried, exposed, and developed to form a photoresist mask for the dielectric material. Then, CF 4 was used for dry etching After removing the unused part, the photoresist cover is removed, and the unused part of the barrier layer is etched with a permanganic acid Cr etchant to form a dielectric material. Then, a photosensitive polyimide HD 6 0 0 0 ( (Made by Lihua Chemical Co., Ltd.), after the hot plate is pre-baked, the dielectric material on the lower electrode is exposed through the exposure and development process. At this time, the open end of the polyimide is opened at 2 〇 / / m inside. The polyurea was hardened at 250 ° C / 2 hr in a nitrogen atmosphere. Amine to form an organic insulating material of 10 # m. After printing by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs, a film of 50 nm C r was formed by sputtering, and another film of 50 nm C u was formed. A seed film. On the Cu film, a positive liquid resist PMER — N — CA 1 00 (made by Tokyo Inka) was spin-coated. After the hot plate was pre-baked, it was exposed and the development process was performed in A photoresist mask was formed. Copper plating was performed on the photoresist opening at a current density of 1 A / dm at 1 0 // m. After that, the photoresist mask was removed and removed with copper etching solution Cobra etching (manufactured by Ebara Denso). Copper seed film. In addition, the Cr seed film was removed by using a permanganic acid Cr etching solution to form an upper electrode. A photosensitive polyimide was spin-coated on the surface formed by the upper electrode. CNS) Λ4 specification (2) 0X297 mm -70- 560017 / ΚΊ Β7 ____ 5. Description of the invention (& HD 6 0 0 0 (made by HDMS) and pre-bake, after exposure, the image formation is used to The opening of the interlayer connection is hardened at 250 ° C / 1 hr to form an organic insulating material. A 500 nm T a N film was formed by a sputtering method. A positive liquid photoresist 〇FPR 8 0, 1 〇c P was rotated thereon, and after pre-baking, exposure was performed to develop an image to form Photoresist pattern cover. This cover was used to perform CF 4 dry etching of the T a N film. The photoresist was then peeled off to form a plurality of resistive elements. After that, a film of 50 n m C i * was formed by sputtering, and a film of 500 n m C u was formed again, and this was used as a seed film. A positive liquid photoresist PMER — N — CA 1 0 0 0 (manufactured by Tokyo Chemical Industry Co., Ltd.) was spin-coated on the Cu film. After preheating the hot plate, it was exposed and developed to form a photoresist. cover. 10 // m copper plating was performed on the photoresist opening with a current density of 1 A / dm. After that, the photoresist mask was removed, and the copper seed film was removed with a copper etching solution, Cobra uranium engraving (manufactured by Ebara Densan). In addition, the Cr seed film was removed using a permanganic acid Cr etching solution to form an upper electrode, a resistor electrode, and an inductor element. A photosensitive polyimide HD 6 0 0 0 (made by HDMS) is spin-coated on a surface formed by the upper electrode, the resistor electrode, and the sensor element, and pre-baked, and then exposed to form an image for interlayer connection. It is hardened at 250 ° C / 1 hr to form an organic insulating material. After that, a film of 50 n m C r was formed by sputtering and a film of 500 n m C u was formed again, and this was used as a seed film. On the Cu film, a positive liquid photoresist PM ER — N — CA 1 000 (the Tokyo National Standard (CNS) A4 specification (21 OX297 mm) is applied to Tokyo paper) _ a ~ -71-(Please read the notes on the back before filling in this page) Printed by the Ministry of Intellectual Property Bureau's Consumer Cooperative Co., Ltd. Printed 560017 A7 ____ B7 V. Description of the invention (made by Chemical Industry), after pre-baking on the hot plate After exposure, the development process is performed to form a photoresist mask. Copper is plated with 1 0 // m at a current density of 1 A / dm at the opening of the photoresist. After that, the photoresist mask is removed and etched with a copper etchant Cobra. (Manufactured by Ebara Denki) Remove the copper seed film. The Cr seed film was removed using a permanganic acid Cr etchant to form an inductor element, wiring, and metal terminal. The metal terminal portion and the inductor element and After the surface of the wiring is spin-coated with photosensitive polyimide HD6000 (manufactured by HDMS) and pre-baked, it is exposed to form an opening for forming a solder ball after exposure, and the temperature is 2 50 ° C / 1 hr It is hardened to form an organic insulating material. After the electroless gold plating process, a flux is applied to a predetermined portion by a metal cover, and free lead solder balls with a diameter of 2 0 // // m are arranged, and external electrodes are formed by a reflow process. Finally, a cutting device is used to cut into individual pieces. The chip is formed to form a semiconductor connection substrate. In this way, the capacitor element, the inductor element, and the resistance element are arranged at different complex distances from the surface of the glass substrate on each side where they are arranged, so that each element can be integrated with higher accuracy In addition to the effect according to Example 8, a smaller semiconductor connection substrate can be obtained. In addition, the use of the glass used in Example 2 as the glass substrate naturally makes the semiconductor connection substrate more reliable in terms of impact resistance and the like. Of course, the use of the photosensitive glass used in Example 9 as the glass substrate can of course provide a higher integration and lower cost semiconductor connection substrate. In addition, if the BCB of Example 3 is used as the organic insulating material, Make the size of the electric paper suitable for the Chinese National Standard (CNS) A4 (210 乂 29? Public) ~ -72- (Please read the precautions on the back before filling Page)

、1T 經濟部智慧財產局員工消費合作社印製 560017 A7 __B7 _ 五、發明説明（4 路的導體損失及介電損失變小，當然能得到信號的通過損 失較小的半導體連接基板。 又，在有機絕緣材使用在實施例4所使用的低介質分 離率樹脂組成物，則使得導體損失及介質損失變小，當然 能低成本地減低通過電路的信號損失。 又，第1 0圖是本發明是一實施例；各元件的配置是 並未被加以限制者。 (實施例1 3 ) 第1 1圖是表示本發明的一實施例的半導體連接基板 的剖視圖。在第1 1圖中，1是玻璃基板（日本電氣玻璃 ，B L C )，其厚度是〇 · 5 m m。 在第1 1圖中，2是有機絕緣材，使用感光性聚醯亞 胺（日立化成，HD — 6000)。 構成在有機絕緣材2的內部的電容器元件，是由C u 所構成的下部電極3 a，由T a的氧化物所構成的介質材 料3 b，由C u所構成的上部電極3 c所成的三層構造的 電容器元件3，及由Cu所構成的下部電極3 / a，由聚 醯亞胺所構成的介質材料3 / b，由C u所構成的上部電 極3 / c所成的三層構造的電容器元件3 -所構成。又在 上部電極上設有用以與上部配線連接的連接部9。 感應器元件4是螺旋型感應器，其材料是Cu。 電阻元件5是由電阻器5b與電極5a， 5c所構成 。電阻器5b是Ta與Ti的化合物，而電極5a， 5b 本紙張尺度適用中國國家標準（CNS ) A4規格（21 OX 297公釐） (請先閲讀背面之注意事項再填寫本頁) •裝· 經濟部智慧財產局員工消費合作社印製 -73- 560017 A7 B7 i、發明説明（4 是由C u所構成。 第1 1圖中，8是使用於與外部連接的金屬端子部。 (請先閲讀背面之注意事項再填寫本頁) 在第1 1圖中，1 2是有機絕緣材，使用感光性.聚醯 亞胺（日立化成，HD — 6000)。 構成在有機絕緣材1 2的內部的電容器元件，是由 C u所構成的下部電極1 3 a，由T a的氧化物所構成的 介質材料1 3 b，由C u所構成的上部電極1 3 c所成的 三層構造的電容器元件1 3，及由C u所構成的下部電極 1 3 > a ,由聚醯亞胺所構成的介質材料1 3 - b，由 C u所構成的上部電極1 3 / c所成的三層構造的電容器 元件1 3 /所構成。 感應器元件1 4是螺旋型感應器，其材料是Cu。 電阻元件1 5是由電阻器1 5b與電極1 5 a， 1 5 c所構成。電阻器1 5b是Ta與T i的化合物，電 極15a, 15b是由Cu所構成。 經濟部智慧財產局員工消費合作社印製 在第11圖中，構成在有機絕緣材2及12內部的各 元件，是經由被塡充在設在玻璃基板1內的貫通孔2 〇的 導體部2 1被電氣式地連接，成爲具有所定功能的電路。 在第1 1圖中，1 0是具應力緩衝功能的有機絕緣材 ，使用分散1聚醯亞胺微粒子的液狀聚醯亞胺材料（日立 化成，GH — P5000)。 在第1 1圖中，6是使用於與印刷基板等安裝基板連 接的金屬端子部，在本圖的情形是在金屬端子部6上裝載 焊球7。 本紙張尺度適用中國國家標準（CNS ) A4規格（210X；297公釐） -74- 560017 A7 B7 五、發明説明（g 以下，對於第1 1圖的半導體連接基板，說明其製造 方法。 在〇 · 5 m m厚度的玻璃基板重疊1 0 0 // m的噴砂 用薄膜光阻劑材奧特爾（東京應化所製），經曝光，顯像 過程以形成蝕刻用光阻劑。之後，藉微噴砂法，在玻璃基 板形成貫通孔。之後，剝離光阻薄膜，藉由濺鍍法在玻璃 基板表面及通孔內壁成膜電鍍用種Cr :50nm, Cu :5 0 〇 n m。在該c u膜上重疊電鍍用薄膜光阻劑 2 0 (日立化成所製）之後，藉由鍍銅形成，通路 內部的導通層。之後剝離光阻劑，並剝離電鍍種膜。 在玻璃基板主面上使用濺鍍法成膜5 0 n m C r , 又成膜5 0 0 n m C u，將此作爲種膜。在該C u膜上 旋轉塗布負型液狀光阻劑PMER - N— CA 1 〇 〇 〇 ( 東京應化所製），在熱板進行預烘之後，經曝光，顯像過 程以形成光阻罩。在該光阻開口部以1 A / d m的電流密 度來進行1 0 // m鍍銅。之後除去光阻罩，以銅蝕刻液布 拉蝕刻（吞原電產所製）除去銅種膜。又，使用過猛酸系 C r鈾刻液除去C 種膜，以形成下部電極。 然後，作爲障壁膜，藉由濺鑛法形成5 0 n m C r ο 之後，在上述下部電極上藉由濺鍍法將T a 2〇5成膜 成爲5 0 0 nm厚度。在該T a 2〇5上塗布正型液狀光阻 劑〇F P R 8 0 0，5 0 0 c p (東京應化所製），經乾 燥，曝光，顯像過程，以形成介質材料的光阻罩。之後， 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） ----------裝-- (請先閲讀背面之注意事項再填寫本頁) *11 線 經濟部智慧財產局員工消費合作社印製 -75- 560017 A7 _____B7__ 五、發明説明（4 使用C F 4進行乾蝕刻，除去不用部分之後，除去光阻罩， 又以過錳酸系C r蝕刻液蝕刻不用部分的障壁層以形成介 質材料。 然後，藉由旋轉塗布感光性聚醯亞胺H D 6 0 0 〇 ( 日立化成所製），在熱板預烘之後，經曝光，顯像過程露 出下部電極上的介質材料。這時候，聚醯亞胺的開口端部 開口成比下部電極端部位於2 0 // m內側。在氮氣環境中 以2 5 0 °C / 2 h r硬化該聚醯亞胺，以形成1 〇 // m的 有機絕緣材。 之後，使用濺鍍法成膜5 0 n m C r，又成膜 5 0 0 n m C u，將此作爲種膜。在該C ια膜上旋轉塗 布正型液狀光阻劑PMER — N-CA 1 0 0 0 (東京應 化所製），在熱板進行預烘之後，經曝光，顯像過程以形 成光阻罩。在該光阻開口部以1 A / d m的電流密度進行 1 0 // m鍍銅。之後除去光阻罩，以銅蝕刻液可布拉蝕刻 (荏原電產所製）除去銅種膜。又，使用過錳酸系C I*蝕 刻液除去C r種膜，以形成上部電極。 在該上部電極所形成的面旋轉塗布感光性聚醯亞胺 H D 6 0 0 0 C H D M S所製）並進行預烤之後，經曝光 ，顯像形成用以層間連的開口部。又，以2 5 0 °C / 1 h r進行硬化以形成有機絕緣材。 然後，藉由濺鍍法形成5 0 0 n m T a N膜。在該 上面旋轉正型液狀光阻劑〇F P R 8 0 0，1 0 0 c p， 進行預烘之後，經曝光，顯像以形成光阻圖案罩。使用該 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） (請先閱讀背面之注意事項再填寫本頁) .裝- 訂 經濟部智慧財產局員工消費合作社印製 -76- 560017 A7 _B7___ 五、發明説明（j 罩進行C F 4乾蝕刻T a N膜。之後剝離光阻劑以形成複數 電阻元件。 (請先閱讀背面之注意事項再填寫本頁) 之後，使用濺鍍法成膜5 0 n m C r，又成膜 5 0 0 n m Cu，將此作爲種膜。在該Cu膜上旋轉塗 布正型液狀光阻劑PMER — N—CA 1 〇 〇 0 (東京應 化所製），在熱板進行預烘之後，經曝光，顯像過程以形 成光阻罩。在該光阻開口部以1 A / d m的電流密度進行 1 0 // m鍍銅。之後除去光阻罩，以銅蝕刻液可布拉蝕刻 (荏原電產所製）除去銅種膜。又，使用過錳酸系C r蝕 刻液除去C r種膜，以形成電阻器電極。 在該電阻器電極所形成的面旋轉塗布感光性聚醯亞胺 HD 6 0 0 0 (HDMS所製）並進行預烤之後，經曝光 ，顯像形成用以層間連接的開口部，並以2 5 0 °C / 1 h r進行硬化以形成有機絕緣材。 經濟部智慧財產局員工消費合作社印製 之後，使用濺鍍法成膜5 0 n m C r，又成膜 5 0 0 n m C u，將此作爲種膜。在該C ια膜上旋轉塗 布正型液狀光阻劑PMER — N—CA 1 0 0 0 (東京應 化所製），在熱板進行預烘之後，經曝光，顯像過程以形 成光阻罩。在該光阻開口部以1 A / d m的電流密度進行 1 0 // m鍍銅。之後除去光阻罩，以銅蝕刻液可布拉蝕刻 (荏原電產所製）除去銅種膜。又，使用過錳酸系C r蝕 刻液除去C r種膜，以形成感應器元件。 在該感應器元件所形成的表面旋轉塗布感光性聚醯亞 胺H D 6 0 0 0 ( H D M S所製）並進行預烤之後，經曝 本紙張尺度適用中國國家標準（CNS ) Α4規格（210X297公釐） -77- 560017 A7 B7 五、發明説明（4 光，並以2 5 0 °C / 1 h r進行硬化以形成有機絕緣材。 (請先閱讀背面之注意事項再填寫本頁) 然後，在玻璃基板背面上使用濺鍍法成膜5 0 n m C r，又成膜5 0 0 n m C u，將此作爲種膜。在該 c u膜上旋轉塗布正型液狀光阻劑Ρ Μ E R - N -C A 1 〇 〇 〇 (東京應化所製），在熱板進行預烘之後， 經曝光，顯像過程以形成光阻罩。在該光阻開口部以1 A / d m的電流密度進行1 0 // m鍍銅。之後除去光阻罩， 以銅蝕刻液可布拉鈾刻（荏原電產所製）除去銅種膜。又 ，使用過錳酸系C r蝕刻液除去C r種膜，以形成下部電 極。 然後，作爲障壁膜，藉由濺鍍法形成5 0 n m C r ο 經濟部智慧財產局員工消費合作社印製 之後，在上述下部電極上藉由濺鍍法將T a 2 Ο 5成膜 成爲5 0 0 nm厚度。在該T a 2〇5上塗布正型液狀光阻 劑〇F P R 8 0 0，5 0 0 c ρ (東京應化所製），經乾 燥，曝光，顯像過程，以形成介質材料的光阻罩。之後， 使用C F 4進行乾蝕刻，除去不用部分之後，除去光阻罩， 又以過錳酸系C r蝕刻液蝕刻不用部分的障壁層以形成介 質材料。 然後，藉由旋轉塗布感光性聚醯亞胺H D 6 0 0 〇 ( 曰立化成所製），在熱板預烘之後，經曝光，顯像過程露 出下部電極上的介質材料。這時候，聚醯亞胺的開口端部 開口成比下部電極端部位於2 0 // m內側。在氮氣環境中 以2 5 0 QC / 2 h r硬化該聚醯亞胺，以形成1 〇从m的 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） 一 ~' -78- 560017 A7 B7 _ 五、發明説明（4 有機絕緣材。 之後，使用濺鍍法成膜5 0 n m C r，又成膜 5 0 〇 n m C u，將此作爲種膜。在該C u膜上旋轉塗 布正型液狀光阻劑PMER - N— CA1 000 (東京應 化所製），在熱板進行預烘之後，經曝光，顯像過程以形 成光阻罩。在該光阻開口部以1 A / d m的電流密度進行 1 0 // m鍍銅。之後除去光阻罩，以銅蝕刻液可布拉蝕刻 (荏原電產所製）除去銅種膜。又，使用過錳酸系C r蝕 刻液除去C I*種膜，以形成上部電極。 在該上部電極所形成的面旋轉塗布感光性聚醯亞胺 H D 6 0 0 0 ( H D M S所製）並進行預烤之後，經曝光 ，顯像形成用以層間連接的開口部，並以2 5 0 °C / 1 h r進行硬化以形成有機絕緣材。 經濟部智慧財產局員工消費合作社印製 然後，藉由濺鍍法形成5 0 0 n m T a N膜。在該 上面旋轉正型液狀光阻劑OFPR800，1 0 0 c p , 進行預烘之後，經曝光，顯像以形成光阻圖案罩。使用該 罩進行C F 4乾蝕刻T a N膜。之後剝離光阻劑以形成複數 電阻元件。 之後，使用濺鍍法成膜5 0 n m C r，又成膜 5 0 0 η m C u，將此作爲種膜。在該C u膜上旋轉塗 布正型液狀光阻劑PMER - N— CA 1 0 〇 〇 (東京應 化所製），在熱板進行預烘之後，經曝光，顯像過程以形 成光阻罩。在該光阻開口部以1 A / d m的電流密度進行 1 0 # m鍍銅。之後除去光阻罩，以銅蝕刻液可布拉蝕刻 本紙張尺度適用中國國家標準（CNS ) A4規格（210X 297公釐） -79- 560017 A7 B7 五、發明説明（7\ (荏原電產所製）除去銅種膜。又，使用過錳酸系c I·触 刻液除去C r種膜，以形成電阻器電極。 在該電阻器電極所形成的面旋轉塗布感光性聚醯亞胺 H D 6 0 0 0 ( H D M S所製）並進行預烤之後，經曝光 ，顯像形成用以層間連接的開口部，並以2 5 0 °C / 1 h r進行硬化以形成有機絕緣材。 之後，使用濺鍍法成膜5 0 n m C r ,又成膜 5 Ο 0 n m C u，將此作爲種膜。在該C u膜上旋轉塗 布正型液狀光阻劑PMER — N— CA1 000 (東京應 化所製），在熱板進行預烘之後，經曝光，顯像過程以形 成光阻罩。在該光阻開口部以1 A / d m的電流密度進行 1 0 // m鍍銅。之後除去光阻罩，以銅蝕刻液可布拉蝕刻 (荏原電產所製）除去銅種膜。又，使用過錳酸系C r蝕 刻液除去C r種膜，以形成配線及金屬端子。 然後，將分散聚醯亞胺微粒子的液狀聚醯亞胺材料 G Η - p 5 0 0 (日立化成）使用作爲光罩進行印刷塗布 ，在熱板上以2 0 0 t / 2 5 m i η進行加熱，在恒溫槽 經濟部智慈財產局員工消費合作社印製 中以2 5 0 °C / 1 h r進行硬化，以形成具有應力緩衝功 能的有機絕緣材。 之後，使用濺鍍法成膜5 Ο n m C r，又成膜 5 〇 〇 n m C u，將此作爲種膜。在該C u膜上旋轉塗 布正型液狀光阻劑PMER — N - CAl〇〇〇 (東京應 化所製），在熱板進行預烘之後，經曝光，顯像過程以形 成光阻罩。在該光阻開口部以1 A / d m的電流密度進行 本紙張尺度適用中國國家標準（CNS ) A4規格（210 X 297公釐） -80- 560017 A7 _B7 _ 五、發明説明（4 1 0 // m鍍銅。之後除去光阻罩，以銅蝕刻液可布拉蝕刻 (荏原電產所製）除去銅種膜。又，使用過錳酸系C r蝕 刻液除去C r種膜，以形成配線及金屬端子部。 在該配線及金屬端子部所形成的面旋轉塗布感光性聚 醯亞胺H D 6 0 0 0 ( H D M S所製）並進行預烤之後， 經曝光，顯像形成以層間連接的開口部，並以2 5 0 t / 1 h r進行硬化以形成有機絕緣材。 在上述金屬端子部表面施以無電解鍍金處理之後，藉 由金屬罩將銲劑塗布在所定部分之後，排列直徑2 0〇 // m的自由鉛焊球，藉由迴銲處理形成外部電極。 最後，使用切斷裝置切成個片化以製作半導體連接基 板。 在本實施例中，由於在金屬端子部9的正下方形成具 有應力緩衝功能的有機絕緣材，因此連接於印刷基板等安 裝基板之際，藉由半導體連接基板與安裝基板之間熱脹係 數之不同而可緩和施加於金屬端子部9及焊球1 0的熱應 力。由此，除了依實施例1 2的效果之外，可得到耐溫度 循環性優異的半導體連接基板。 又，具有應力緩衝功能的有機絕緣材，是形成在金屬 端子部9之正下方也可以。 又，在玻璃基板使用在實施例2所使用的玻璃，則當 然使得半導體連接基板的耐衝擊性等的可靠性更高者。 又，在玻璃基板使用在實施例9所使用的感光性玻璃 ，當然可得到更高積體度又低成本的半導體連接基板。 本紙張尺度適用中國國家標準（CNS ) A4規格（210X29*7公釐1 ~ -81 - (請先閱讀背面之注意事項再填寫本頁) 訂 經濟部智慧財產局員工消費合作社印製 560017 A7 ____B7_ 五、發明説明（^ (請先閱讀背面之注意事項再填寫本頁) 又，在有機絕緣材使用實施例3的B C B，則使得電 路的導體損失及介電損失變小，當然能得到信號的通過損 失較小的半導體連接基板。 又，在有機絕緣材使用在實施例4所使用的低介質分 離率樹脂組成物，則使得導體損失及介質損失變小，當然 能低成本地減低通過電路的信號損失。 又，第1圖是本發明是一實施例；各元件的配置是並 未被加以限制者。 以下，說明本發明的其他形態。 經濟部智慧財產局員工消費合作社印製 在將半導體元件連接於印刷基板等的安裝基板的半導 體連接基板中，具有（1 )玻璃基板，及（2 )從設於上 述玻璃基板上電容器元件，感應器元件，電阻元件所選擇 的一或複數元件，及連接設在上述玻璃基板上的上述元件 的金屬配線，及（4 )設在上述玻璃基板上的上述金屬配 線的一部分的金屬端子部，及（5 )覆蓋除了上述元件及 上述金屬端子部之外的金屬配線部分的周圍的有機絕緣材 ，因此可得到以高性能且高密度地積體電容器，感應器， 電阻等各種電子零件半導體連接基板。 在將半導體元件連接於印刷基板等安裝基板等的半導 體連接基板中，具有（1 )在所定位置設有貫通孔的玻璃 基板，及（2 )從設於上述玻璃基板之兩側或一側的電容 器元件，感應器元件，電阻元件所選擇的一或複數元件， 及（3)連接設在上述玻璃基板的兩側的上述元件的金屬 配線，及（4 )形成在電氣式地連接上述金屬配線的上述 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） -82- 經濟部智慧財產局員工消費合作社印製 560017 A7 ____B7__ 五、發明説明（土 貫通孔內部的導體部，及（5 )設在上述玻璃基板的兩側 或一側的上述金屬配線的一部分的金屬端子部，及（6 ) 覆蓋除了上述元件及上述金屬端子部之外的金屬配線部分 的周圍的有機絕緣材，因此，可得到以高性能且高密度地 積體電容器，感應器，電阻等各種電子零件的半導體連接 基板。 從電容器元件，感應器元件，電阻元件所選擇的一或 複數元件及金屬配線及金屬端子部及有機絕緣材，形成在 比上述玻璃基板的端部位於內側，因此，能將在切斷半導 體連接基板時或安裝半導體連接基板時施加有集中式應力 的構成部分耐於該應力，大幅度地減低隨著施加應力所發 生的半導體連接基板的損壞，可得到高可靠性，製造良率 良好，且以高密度積體電容器，感應器，電阻等電子零件 的半導體連接基板。 玻璃基板爲含有從Sc, Y，La, Pi·，Nd, P m，S m , E u , G d，丁 b，D y，Η，E r，T m ，Y b，L u的群所選擇的至少一種的稀土類元素的玻璃 所構成，因此可提高玻璃基板的強度，可得到高可靠性的 半導體連接基板。 有機絕緣材爲聚醯亞胺樹脂，具聚醯亞胺的高熱安定 性，因此可得到高可靠性的半導體連接基板。 有機絕緣材爲苯醯基環丁烯（B C B )，具B C B的 介質常數，介質分離率，因此可得到更高性能，高效率的 半導體連接基板。 本紙張尺度適用中國國家標準( CNS ) A4規格（210X297公釐） 辦衣 , ^ 訂 *線 (請先閲讀背面之注意事項再填寫本頁) -83- 560017 A7 B7 五、發明説明（& 有機絕緣材爲含有以上述一般式（化1 )所表示的複 數苯乙烯基的交聯成分，又含有重量平均分子量5 0 0 〇 以上的高分子量體的低介質分離率樹脂組成物，具有上述 低介質分離率樹脂組成物的低成本且低介質常數，介質分 離率，因此可以低成本地得到更高性能，高效率的半導體 連接基板。 電容器元件爲以兩個金屬配線夾住無機材料所構成的 介質材料的構造的一或複數電容器元件，及以兩個金屬電 極夾住無機材料所構成的介質材料的構造的一或複數電容 器元件所構成，因此適當使用有機或無機材料雙方的介質 ，可得到高性能，高積體度的小型的半導體連接基板。 無機材料所構成的介質材料爲T a，M g，S r的任 一氧化物，而有機材料所構成的介質材料爲聚醯亞胺，具 有T a , M g，S r之低成本且高安定性的特性及聚醯亞 胺的高熱安定性，因此可得到低成本，高可靠性，高性會g 的半導體連接基板。 無機材料所構成的介質材料爲T a，M g，S I*的任 一氧化物，而有機材料所構成的介質材料爲B C B，具有 T a，M g，S r之低成本且高安定性的特性及B C B的 介質常數及介質分離率，因此可得到低成本，高可靠性， 高性能的半導體連接基板。 無機材料所構成的介質材料爲T a，M g，S r的任 一氧化物，而有機材料所構成的介質材料爲含有以上述一 般式（化1 )所表示的複數苯乙烯基的交聯成分，又含有 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） (請先閱讀背面之注意事項再填寫本頁) -裝. 訂 經濟部智慧財產局員工消費合作社印製 -84- 560017 A7 B7 五、發明説明（4 (請先閱讀背面之注意事項再填寫本頁) 重量平均分子量5 0 0 0以上的高分子量體的低介質分離 率樹脂組成物，能低成本地選擇T a，M g，S r的低成 本且高安定性的特性及上述低介質分離率樹脂組成物的低 介質常數及介質分離率，因此可得到低成本，高可靠性， 高性能的半導體連接基板。 電容器元件爲以介質材料以外的絕緣體近接於玻璃基 板之一邊的金屬電極的端部，作爲其特徵的電容器元件所 構成，因此提供一種防1電極間的短路或降低絕緣耐壓， 不會損及設計自由度，低不良率，高可靠性的電容器元件 ，又可得到內設複數此種電容器元件的不良率較低，高可 靠性的半導體連接基板。 電容器元件及感應器元件及電阻元件，爲在從分別配 置的側的玻璃基板表面以不同的複數距離加以配置，而在 不同面配置各元件，因此可以用更高密度積體各元件，可 得到更小型的半導體連接基板。 經濟部智慧財產局員工消費合作社印製 玻璃基板爲感光性玻璃，可得到以更低成本而用簡便 處理，將孔徑較小的貫通孔高密度開孔的玻璃基板，並可 將半導體連接基板的大小成爲較小。 貫通孔的兩個開孔直徑R 1，R 2 ( R ) - R 2 )與 玻璃基板的厚度t之間的關係，以 70^ tan'1(t/(Rl-R2))^ 80 表示，而以更高密度可積體電路，因此可得更小型的半導 本紙張尺度適用中國國家標準（CNS ) A4規格（21〇X 297公釐） -85 - 560017 A7 B7 經濟部智慧財產局員工消費合作社印製 五、發明説明（4 體連接基板。 電容器元件及感應器元件及電阻元件的任一元件配置 在玻璃基板之一側，而留下的元件配置在玻璃基板的另一 側，因此，可減小各元件間之影響，又可減小寄生電容， 因而可以提高元件本身諧振頻率。 電容器元件及感應器元件及電阻元件係從分別配置的 側的玻璃基板表面不同的複數距離加以配設，在將各元件 配置不同面，可以用更高密度的積體各元件。 使用半導體連接基板，可用更低成本又小型地可得到 更高性能，高可靠性的無線終端裝置。 使用半導體連接基板，可用更低成本又小型地可得到 更高性能，高可靠性的無線基地台裝置。 使用半導體連接基板，可用更低成本又小型地可得到 更高性能，高可靠性的無線計測裝置。 依照以上的實施例，可提供一種高可靠性，製造良率 優異，且以高性能又高密度地積體電容器，感應器，電阻 等各種電子零件的半導體連接基板。 (圖式之簡單說明） 第1圖是表示本發明的第1至第4實施例的槪略剖視 圖。 第2圖是表示本發明的第5實施例的槪略剖視圖。 第3圖是表示本發明的第6實施例的槪略剖視圖。 第4圖是表示本發明的第6實施例的電容器元件的圖 (請先閱讀背面之注意事項再填寫本頁) -裝- 訂 線 本紙張尺度適用中國國家標準（CNS ) A4規格（210X 297公麓） -86- 560017 經濟部智慧財產局員工消費合作社印製 A7 B7 1、發明説明（〇)4 式。 第5圖是表示本發明的第7實施例的槪略剖視圖。 第6圖是表示本發明的第8實施例的槪略剖視圖。 第7圖是表示本發明的第9實施例的槪略剖視圖。 第8圖是表示本發明的第1 〇實施例的槪略剖視圖。 第9圖是表示本發明的第1 1實施例的槪略剖視圖。 第1 0 ffl是表示本發明的第1 2實施例的槪略剖視圖 0 第1 1 Η是表示本發明的第1 3實施例的槪略剖視圖 0 主要元件對照表 1 玻璃基板 2.12 有機絕緣材 3.13 電容器元件 3a,13a 下部電極 3b,13b 介質材料 3c, 13c 上部電極 4.14 感應器元件 5.15 電阻元件 5 a , 5 c 電極 5 b 電阻器 6, 8 金屬端子部 7 焊球 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） 裝 ； 訂 線 (請先閲讀背面之注意事項再填寫本頁) -87- 560017 A7 五、發明説明（42 0 貫通孔2 1 導體部 (請先閱讀背面之注意事項再填寫本頁)Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs, 1T 560017 A7 __B7 _ V. Description of the invention (The conductor loss and dielectric loss of the 4-way channel are reduced, and of course, the semiconductor connection substrate with less signal loss can be obtained. Also, in The organic insulating material used in the low-dielectric-separation-rate resin composition used in Example 4 can reduce the conductor loss and dielectric loss, and of course, can reduce the signal loss through the circuit at a low cost. Fig. 10 shows the present invention. (Embodiment 1 3) FIG. 11 is a cross-sectional view showing a semiconductor connection substrate according to an embodiment of the present invention. In FIG. 11, 1 It is a glass substrate (Japan Electric Glass, BLC), and its thickness is 0.5 mm. In Fig. 11, 2 is an organic insulating material, and a photosensitive polyimide (Hitachi Kasei, HD — 6000) is used. The capacitor element inside the organic insulating material 2 is a three electrode formed by Cu, a lower electrode 3a, a dielectric material 3b formed by Ta oxide, and an upper electrode 3c formed by Cu. Layered Capacitor element 3, a capacitor element with a three-layer structure composed of a lower electrode 3 / a made of Cu, a dielectric material 3 / b made of polyimide, and an upper electrode 3 / c made of Cu 3-Structure. The upper electrode is also provided with a connection portion 9 for connection with the upper wiring. The sensor element 4 is a spiral type inductor and its material is Cu. The resistance element 5 is composed of a resistor 5b and electrodes 5a, 5c. The resistor 5b is a compound of Ta and Ti, and the electrodes 5a and 5b are in accordance with the Chinese National Standard (CNS) A4 specification (21 OX 297 mm). (Please read the precautions on the back before filling this page) • Printed by the Consumers ’Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs-73-560017 A7 B7 i. Description of Invention (4 is made of Cu. Figure 11 shows 8 as a metal terminal for external connection. (Please read the precautions on the back before filling in this page.) In Figure 11, 12 is an organic insulating material, using photosensitive polyimide (Hitachi Kasei, HD — 6000). Composition in organic insulating material 1 The internal capacitor element of 2 is a lower part composed of Cu A pole 1 3 a, a dielectric material 1 3 b made of Ta oxide, a three-layer capacitor element 1 3 made of Cu upper electrode 1 3 c, and a piece made of Cu The lower electrode 1 3 > a is composed of a dielectric material 1 3-b composed of polyimide, and a capacitor element 1 3 / of a three-layer structure composed of an upper electrode 1 3 / c composed of Cu. The inductor element 14 is a spiral type inductor whose material is Cu. The resistance element 15 is composed of a resistor 15b and electrodes 15a, 1c. The resistor 15b is a compound of Ta and Ti, and the electrodes 15a and 15b are made of Cu. Printed in Figure 11 by the Consumers' Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. Each element included in the organic insulating materials 2 and 12 is a conductor portion 2 filled in a through hole 2 provided in the glass substrate 1. 1 is electrically connected to become a circuit having a predetermined function. In Fig. 11, 10 is an organic insulating material having a stress buffering function, and a liquid polyimide material (Hitachi Kasei, GH-P5000) in which 1 polyimide fine particles are dispersed is used. In FIG. 11, reference numeral 6 denotes a metal terminal portion used for connection to a mounting substrate such as a printed circuit board. In the case of this figure, a solder ball 7 is mounted on the metal terminal portion 6. This paper size applies the Chinese National Standard (CNS) A4 specification (210X; 297 mm) -74- 560017 A7 B7 V. Description of the invention (g. For the semiconductor connection substrate shown in Figure 11 below, its manufacturing method will be described. 〇 · A glass substrate with a thickness of 5 mm was superimposed on a 0 0 // m thin film photoresist material Otter (manufactured by Tokyo Chemical Industry), and was exposed and developed to form a photoresist for etching. A micro-blast method was used to form a through hole in the glass substrate. After that, the photoresist film was peeled off and a sputtering method was used to form a film on the surface of the glass substrate and the inner wall of the through hole. Cr: 50 nm, Cu: 50 nm. After the Cu thin film photoresist 20 (manufactured by Hitachi Chemical Co., Ltd.) was superposed on the cu film, copper was used to form a conductive layer inside the via. Then the photoresist was peeled off and the plating seed film was peeled off. On the main surface of the glass substrate 50 nm C r was formed by sputtering, and 500 nm C u was formed as a seed film. A negative liquid photoresist PMER-N- CA 1 was spin-coated on the Cu film. 〇〇 (manufactured by Tokyo Chemical Industry Co., Ltd.), after pre-baking on a hot plate, exposure was performed and the image was developed. Process to form a photoresist mask. Copper is plated at 1 0 // m with a current density of 1 A / dm at the opening of the photoresist. After that, the photoresist mask is removed and etched with a copper etchant (made by Tunhara Denso). ) The copper seed film was removed. The C seed film was removed using an over-acid-based C r uranium etching solution to form a lower electrode. Then, as a barrier film, 50 nm C r ο was formed by a sputtering method. On the lower electrode, T a 2 0 5 was formed into a thickness of 500 nm by a sputtering method. A positive liquid photoresist 0 FPR 8 0 0, 5 0 0 cp ( (Made by Tokyo Yinghua Co., Ltd.), after drying, exposure, and development to form a photoresist mask for the dielectric material. After that, this paper size applies the Chinese National Standard (CNS) A4 specification (210X297 mm) ------ ---- Equipment-(Please read the precautions on the back before filling this page) * 11 Printed by the Consumers' Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs-75- 560017 A7 _____B7__ V. Description of the invention (4 Use CF 4 to dry After etching, removing the unnecessary portion, the photoresist mask is removed, and the barrier layer of the unnecessary portion is etched with a permanganic acid Cr etchant to form Dielectric material. Then, spin-coated photosensitive polyimide HD 6000 (manufactured by Hitachi Chemical Co., Ltd.), after pre-baking on a hot plate, exposed to expose the dielectric material on the lower electrode during development. At this time , The open end of the polyimide is located inside 20 m // than the lower electrode end. The polyimide is hardened at 250 ° C / 2 hr in a nitrogen atmosphere to form 1 〇 // m of organic insulation. After that, a film of 50 n m C r was formed by sputtering and a film of 500 n m C u was formed again, and this was used as a seed film. A positive liquid photoresist PMER — N-CA 1 0 0 0 (manufactured by Tokyo Chemical Industry Co., Ltd.) was spin-coated on the C ια film. After preheating the hot plate, it was exposed and developed to form a photoresist. cover. 1 0 // m copper plating is performed on the photoresist opening with a current density of 1 A / dm. After that, the photoresist mask was removed, and the copper seed film was removed with a copper etching solution Cobra etching (manufactured by Ebara Densan). In addition, the Cr seed film was removed using a permanganic acid C * etching solution to form an upper electrode. The surface formed by the upper electrode is spin-coated with a photosensitive polyimide (made by H D 6 0 0 0 C H D M S)) and pre-baked, and then exposed to form an opening for interlayer connection. Furthermore, it was hardened at 250 ° C / 1 h r to form an organic insulating material. Then, a 500 n m T a N film was formed by a sputtering method. A positive liquid photoresist OF P R 8 0, 100 c p was rotated on the upper surface, and after pre-baking, it was exposed and developed to form a photoresist pattern mask. Use this paper size to apply Chinese National Standard (CNS) A4 specifications (210X297 mm) (Please read the precautions on the back before filling out this page). Binding-Ordered by the Intellectual Property Bureau of the Ministry of Economic Affairs, Printed by Consumer Cooperatives -76- 560017 A7 _B7___ 5. Description of the invention (j cover is CF 4 dry-etched T a N film. Then the photoresist is peeled off to form a plurality of resistance elements. (Please read the precautions on the back before filling this page). A film of 50 nm C r and a film of 500 nm Cu were used as a seed film. A positive liquid photoresist PMER — N — CA 1 OO0 was spin-coated on the Cu film (Tokyo Institute of Chemical Technology) After the hot plate is pre-baked, it is exposed and developed to form a photoresist mask. The photoresist opening is subjected to 1 0 // m copper plating at a current density of 1 A / dm. After that, the photoresist is removed. The copper seed film was removed with a copper etching solution, Cobra etching (manufactured by Korihara Densho), and the Cr seed film was removed using a permanganic acid Cr etching solution to form a resistor electrode. The resulting surface was spin-coated with a photosensitive polyimide HD 6 0 0 0 (manufactured by HDMS) and After pre-baking, after exposure, the openings for interlayer connection are developed and hardened at 250 ° C / 1 hr to form organic insulating materials. After printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs, it is used 50 nm C r was formed by sputtering, and 50 nm C u was formed as a seed film. A positive liquid photoresist PMER — N—CA 1 0 0 was spin-coated on the C ια film. 0 (manufactured by Tokyo Yinghua), after the hot plate is pre-baked, it is exposed and developed to form a photoresist mask. The photoresist opening is subjected to 1 0 // m plating at a current density of 1 A / dm Copper. After that, the photoresist mask was removed, and the copper seed film was removed with copper etching solution Cobra etching (manufactured by Ebara Densan). The permanganic acid C r etching solution was used to remove the C r seed film to form an inductor element. After the surface of the sensor element is spin-coated with photosensitive polyimide HD 6 0 0 0 (made by HDMS) and pre-baked, the paper size is exposed to Chinese National Standard (CNS) A4 specification (210X297) Mm) -77- 560017 A7 B7 V. Description of the invention (4 light, and carried out at 2 50 ° C / 1 hr To form an organic insulating material. (Please read the precautions on the back before filling out this page.) Then, use sputtering to form 50 nm C r and 50 nm C u on the back of the glass substrate. This is used as a seed film. On the cu film, a positive liquid photoresist PM ER-N-CA 100 (made by Tokyo Indica) is spin-coated, and after pre-baking on a hot plate, it is exposed to light. Image process to form a photoresist mask. 1 0 // m copper plating was performed on the photoresist opening with a current density of 1 A / d m. After that, the photoresist mask was removed, and the copper seed film was removed with a copper etching solution Cobra uranium engraving (manufactured by Ebara Densan). In addition, the Cr seed film was removed using a permanganic acid Cr etching solution to form a lower electrode. Then, as a barrier film, 50 nm C r was formed by sputtering method. After being printed by the Consumer Cooperative of Intellectual Property Bureau of the Ministry of Economic Affairs, T a 2 Ο 5 was formed into 5 by sputtering method on the lower electrode. 0 0 nm thickness. A positive liquid photoresist 〇FPR 8 0,5 0 0 c ρ (manufactured by Tokyo Chemical Industry Co., Ltd.) was coated on the T a 205, and dried, exposed, and developed to form light of the dielectric material. Mask. After that, dry etching is performed using C F 4 to remove the unused portion, and then the photoresist mask is removed, and the unused portion of the barrier layer is etched with a permanganic acid Cr etchant to form a dielectric material. Then, the photosensitive polyfluorene imide HD 600 (made by Lihwa Kasei) was spin-coated, and after pre-baking on a hot plate, exposure was performed to expose the dielectric material on the lower electrode during development. At this time, the open end of the polyimide is opened to be inside 20 m from the lower electrode end. The polyimide is hardened at 250 QC / 2 hr in a nitrogen atmosphere to form a paper size from 10 m to the Chinese National Standard (CNS) A4 specification (210X297 mm)-~ -78- 560017 A7 B7 _ 5. Description of the invention (4 Organic insulating material. After that, 50 nm C r was formed by sputtering, and 50 nm C u was formed, and this was used as a seed film. The Cu film was rotated. Apply positive liquid photoresist PMER-N-CA1 000 (manufactured by Tokyo Chemical Industry Co., Ltd.), pre-bake the hot plate, and then expose and develop to form a photoresist mask. The photoresist opening is formed with 1 Copper plating was performed at a current density of A / dm at 1 0 // m. After that, the photoresist cover was removed, and the copper seed film was removed with copper etching solution Cobra etching (manufactured by Ebara Densan). In addition, a permanganic acid-based C r was used. The etching solution removes the CI * seed film to form an upper electrode. A photosensitive polyimide HD 6 0 0 0 (manufactured by HDMS) is spin-coated on the surface formed by the upper electrode and pre-baked, and then exposed to development. Openings for interlayer connection are formed and hardened at 250 ° C / 1 hr to form an organic insulating material. Ministry of Economy Wisdom It was printed by the production bureau's consumer cooperative, and then a 500 nm T a N film was formed by sputtering. The positive liquid photoresist OFPR800, 100 cp was rotated on the top, and after pre-baking, it was exposed. Develop to form a photoresist pattern cover. Use this cover to perform CF 4 dry-etching of the T a N film. Then remove the photoresist to form a plurality of resistive elements. After that, a 50 nm Cr film is formed by sputtering, and another film is formed. 5 0 η m Cu, this was used as a seed film. A positive liquid photoresist PMER-N-CA 1 00 (made by Tokyo Chemical Industry Co., Ltd.) was spin-coated on the Cu film, and performed on a hot plate. After pre-baking, a photoresist mask is formed through exposure and development. The photoresist opening is copper plated at a current density of 1 A / dm at 1 0 #m. After that, the photoresist mask is removed and a copper etchant can be used to distribute the photoresist mask. The dimensions of this paper are applicable to Chinese National Standard (CNS) A4 (210X 297 mm) -79- 560017 A7 B7. 5. Description of the invention (7 \ (produced by Ebara Densen Co., Ltd.) to remove copper seed film. Also, used manganese The acid-based cI · etching solution removes the Cr seed film to form a resistor electrode. The surface formed by the resistor electrode is spin-coated. After the photopolyimide HD 6 0 0 0 (made by HDMS) is pre-baked, it is exposed to form an opening for interlayer connection after exposure, and is cured at 250 ° C / 1 hr to form Organic insulating material. After that, 50 nm C r was formed by sputtering, and 50 nm C u was formed again, and this was used as a seed film. A positive liquid photoresist PMER-N-CA1000 (manufactured by Tokyo Chemical Industries) was spin-coated on the Cu film, and after being pre-baked on a hot plate, it was exposed and developed to form a photoresist mask. 1 0 // m copper plating is performed on the photoresist opening with a current density of 1 A / dm. After that, the photoresist mask was removed, and the copper seed film was removed with a copper etching solution Cobra etching (manufactured by Ebara Densan). In addition, the Cr seed film was removed using a permanganic acid Cr etching solution to form wirings and metal terminals. Then, a liquid polyimide material G Η-p 5 0 0 (Hitachi Kasei) in which the polyimide fine particles are dispersed is printed and applied using a photomask, and is applied on a hot plate at 200 t / 2 5 mi η It is heated and hardened at 250 ° C / 1 hr in the printing of the employee's consumer cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs of the thermostat to form an organic insulating material with a stress buffering function. After that, a film of 50 nm m Cr was formed by sputtering, and a film of 5000 m m Cu was formed again, and this was used as a seed film. On the Cu film, a positive liquid photoresist PMER — N-CAAlOO (manufactured by Tokyo Chemical Industry Co., Ltd.) was spin-coated. After the hot plate was pre-baked, it was exposed and developed to form a photoresist mask. . The photoresistance opening is carried out at a current density of 1 A / dm. The paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) -80- 560017 A7 _B7 _ V. Description of the invention (4 1 0 / / m copper plating. After that, the photoresist cover was removed, and the copper seed film was removed with copper etching solution Cobra etching (manufactured by Ebara Densan Co., Ltd.). The C r seed film was removed by using a permanganic acid C r etching solution to form Wiring and metal terminal parts. A photosensitive polyimide HD 6 0 0 0 (manufactured by HDMS) is spin-coated on the surface formed by the wiring and metal terminal parts and pre-baked, and then exposed through exposure to form an interlayer connection. It is hardened at 250 t / 1 hr to form an organic insulating material. After the surface of the metal terminal is subjected to electroless gold plating, the flux is applied to a predetermined portion by a metal cover, and the diameter is 2 0〇 // m free lead solder ball, the external electrode is formed by reflow process. Finally, it is cut into pieces using a cutting device to produce a semiconductor connection substrate. In this embodiment, since the Stress buffer function is formed directly below Organic insulation material, when connecting to a printed circuit board or other mounting substrate, the thermal stress applied to the metal terminal portion 9 and the solder ball 10 can be alleviated by the difference in thermal expansion coefficient between the semiconductor connection substrate and the mounting substrate. Therefore, in addition to the effects of Example 12, a semiconductor connection substrate having excellent temperature cycle resistance can be obtained. An organic insulating material having a stress buffering function may be formed directly under the metal terminal portion 9. Also Of course, if the glass used in Example 2 is used for the glass substrate, the reliability of the impact resistance of the semiconductor connection substrate, etc., will be made higher. Of course, the photosensitive glass used in Example 9 is used for the glass substrate. Higher integration and lower cost semiconductor connection substrates can be obtained. This paper size applies to Chinese National Standard (CNS) A4 specifications (210X29 * 7 mm 1 ~ -81-(Please read the precautions on the back before filling this page ) Order printed by the Intellectual Property Bureau of the Ministry of Economic Affairs, Consumer Cooperatives printed 560017 A7 ____B7_ V. Description of the invention (^ (Please read the precautions on the back before filling this page) Also, there are The use of the BCB of Example 3 as the machine insulating material reduces the conductor loss and dielectric loss of the circuit, and of course, it is possible to obtain a semiconductor connection substrate with a small signal loss. Also, the organic insulating material used in Example 4 is used. The low-dielectric-separation resin composition reduces the conductor loss and dielectric loss, and of course, can reduce the signal loss through the circuit at a low cost. In addition, the first figure is an embodiment of the present invention; the arrangement of each element is Those without limitation are described below. Other embodiments of the present invention will be described below. The consumer cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs has printed a semiconductor connection substrate connecting a semiconductor element to a mounting substrate such as a printed circuit board, and has (1) a glass substrate. And (2) one or a plurality of elements selected from capacitor elements, inductor elements, and resistance elements provided on the glass substrate, and metal wirings connecting the elements provided on the glass substrate, and (4) provided on the glass substrate. A metal terminal portion of a part of the metal wiring on the glass substrate, and (5) covering the above elements and the metal Around the metal wiring portion other than subsections organic insulating material, so to obtain high performance and high density integrated capacitors, inductors, resistors and other electronic components connected to the semiconductor substrate. A semiconductor connection substrate for connecting a semiconductor element to a mounting substrate such as a printed circuit board has (1) a glass substrate provided with a through hole at a predetermined position, and (2) a glass substrate provided on both sides or one side of the glass substrate. Capacitor element, inductor element, resistance element selected from one or more elements, and (3) metal wiring connected to the above-mentioned elements provided on both sides of the glass substrate, and (4) formed to electrically connect the above-mentioned metal wiring The above paper size applies to the Chinese National Standard (CNS) A4 specification (210X297 mm) -82- Printed by the Employees' Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 560017 A7 ____B7__ 5. Description of the invention (the conductor part inside the soil through hole, and ( 5) a metal terminal portion provided on both sides or one side of the glass substrate and a part of the metal wiring, and (6) an organic insulating material covering the periphery of the metal wiring portion other than the element and the metal terminal portion, Therefore, it is possible to obtain a semiconductor connection substrate having various types of electronic components such as a capacitor, an inductor, and a resistor with high performance and high density. The capacitor element, the inductor element, the resistance element selected one or more elements, the metal wiring, the metal terminal portion, and the organic insulating material are formed inside the end portion of the glass substrate, so that the semiconductor connection substrate can be cut off. When the semiconductor connection substrate is mounted or when the semiconductor connection substrate is mounted, the component subjected to the concentrated stress is resistant to the stress, and the damage to the semiconductor connection substrate caused by the applied stress is greatly reduced. High reliability, good manufacturing yield, and Semiconductor connection substrates for high-density integrated capacitors, inductors, resistors, and other electronic components. The glass substrate is made of Sc, Y, La, Pi ·, Nd, P m, S m, E u, G d, Db, D The y, 一种, Er, Tm, Yb, Lu group is composed of at least one kind of rare-earth element glass selected, so the strength of the glass substrate can be improved, and a highly reliable semiconductor connection substrate can be obtained. Organic The polyimide resin is used as the insulating material, which has high thermal stability of polyimide, so that a highly reliable semiconductor connection substrate can be obtained. The organic insulating material is phenylfluorenylcyclobutene (BCB) With BCB's dielectric constant and dielectric separation rate, higher performance and high efficiency semiconductor connection substrates can be obtained. This paper size applies to Chinese National Standard (CNS) A4 specification (210X297 mm). Clothing, ^ Order * 线 ( Please read the notes on the back before filling this page) -83- 560017 A7 B7 V. Description of the invention (& Organic insulating material is a cross-linking component containing a plurality of styrene groups represented by the general formula (chemical formula 1) above. A low-medium-separation-rate resin composition containing a high-molecular-weight body having a weight-average molecular weight of 5,000 or more. Higher-performance, high-efficiency semiconductor connection substrate. The capacitor element is one or more capacitor elements having a structure in which a dielectric material composed of an inorganic material is sandwiched between two metal wirings, and one or more capacitor elements having a structure in which a dielectric material is composed of an inorganic material sandwiched by two metal electrodes. Structure, it is possible to obtain a small-sized semiconductor connection substrate with high performance and high integration by appropriately using a medium of both organic and inorganic materials. The dielectric material composed of inorganic materials is any one of T a, M g, and S r, and the dielectric material composed of organic materials is polyimide, which has low cost and high T a, M g, and S r Because of the stability characteristics and the high thermal stability of polyimide, a semiconductor connection substrate with low cost, high reliability, and high performance can be obtained. The dielectric material composed of inorganic materials is any oxide of T a, M g, SI *, and the dielectric material composed of organic materials is BCB, which has low cost and high stability of T a, M g, and S r The characteristics and dielectric constant of BCB and the dielectric separation rate can be used to obtain a low-cost, high-reliability, high-performance semiconductor connection substrate. The dielectric material composed of an inorganic material is any of Ta, Mg, and Sr, and the dielectric material composed of an organic material is a cross-linking containing a plurality of styryl groups represented by the above general formula (Chem. 1). Constituents, but also this paper size Applies Chinese National Standard (CNS) A4 specifications (210X297 mm) (Please read the precautions on the back before filling this page)-Packing. Order printed by the Intellectual Property Bureau of the Ministry of Economic Affairs, Consumer Cooperatives -84 -560017 A7 B7 V. Description of the invention (4 (Please read the precautions on the back before filling in this page) Low weight media separation resin composition of high molecular weight body with a weight average molecular weight of 5 0 0 or more, T can be selected at low cost a, M g, S r Low cost and high stability characteristics and low dielectric constant and dielectric separation rate of the above-mentioned low dielectric separation rate resin composition, so that a low cost, high reliability, high performance semiconductor connection substrate can be obtained The capacitor element is an end portion of a metal electrode in which an insulator other than a dielectric material is in close proximity to one side of the glass substrate. The capacitor element is a feature of the capacitor element. Short circuit or lower insulation withstand voltage, will not damage the design freedom, low defect rate, high reliability capacitor element, and can obtain a built-in complex capacitor element with low defect rate, high reliability semiconductor connection Substrates: Capacitor elements, inductor elements, and resistance elements are arranged at different complex distances from the surface of the glass substrate on the side where they are placed separately, and each element is placed on a different surface, so each element can be integrated with a higher density. Smaller semiconductor connection substrates are available. The glass substrates printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs are photosensitive glass, which can be obtained at a lower cost and with simple handling and high-density openings with smaller holes. Substrate, and the size of the semiconductor connection substrate can be made smaller. The relationship between the two opening diameters R 1, R 2 (R)-R 2) of the through hole and the thickness t of the glass substrate is 70 ^ tan ' 1 (t / (Rl-R2)) ^ 80, and can be integrated with higher density, so smaller semiconductors can be obtained. The paper size is applicable to China National Standard (CNS) A4 specifications (21 X 297 mm) -85-560017 A7 B7 Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. 5. Description of the invention (4-body connection substrate. Any one of the capacitor element, sensor element and resistance element is arranged on one of the glass substrates. Side, and the remaining components are arranged on the other side of the glass substrate, so the influence between the components can be reduced, and the parasitic capacitance can be reduced, so that the resonant frequency of the component itself can be increased. Capacitor components and inductor components and resistance The components are arranged from a plurality of different distances from the surface of the glass substrate on the side where the components are arranged, and each component can be arranged on a different surface, so that each component can be integrated with a higher density. The use of a semiconductor connection substrate allows for a lower cost and a smaller size. A wireless terminal device with higher performance and high reliability can be obtained. By using a semiconductor connection substrate, a wireless base station device with higher performance and reliability can be obtained at a lower cost and a smaller size. By using a semiconductor connection substrate, a wireless measurement device with higher performance and higher reliability can be obtained at a lower cost and a smaller size. According to the above embodiments, it is possible to provide a semiconductor connection substrate for various electronic components such as capacitors, inductors, and resistors with high reliability, excellent manufacturing yield, and high performance and high density. (Brief description of the drawings) Fig. 1 is a schematic sectional view showing the first to fourth embodiments of the present invention. Fig. 2 is a schematic cross-sectional view showing a fifth embodiment of the present invention. Fig. 3 is a schematic cross-sectional view showing a sixth embodiment of the present invention. Fig. 4 is a diagram showing a capacitor element according to a sixth embodiment of the present invention (please read the precautions on the back before filling in this page)-Binding-Binding This paper size applies the Chinese National Standard (CNS) A4 specification (210X 297 (Gonglu) -86- 560017 A7 B7 printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 1. Description of Invention (〇) 4. Fig. 5 is a schematic sectional view showing a seventh embodiment of the present invention. Fig. 6 is a schematic sectional view showing an eighth embodiment of the present invention. Fig. 7 is a schematic sectional view showing a ninth embodiment of the present invention. Fig. 8 is a schematic sectional view showing a tenth embodiment of the present invention. Fig. 9 is a schematic sectional view showing a first embodiment of the present invention. The 10th ffl is a schematic cross-sectional view showing a 12th embodiment of the present invention. 0 The 1st 1f is a schematic cross-sectional view showing a 13th embodiment of the present invention. Capacitor element 3a, 13a Lower electrode 3b, 13b Dielectric material 3c, 13c Upper electrode 4.14 Sensor element 5.15 Resistor element 5a, 5c Electrode 5b Resistor 6, 8 Metal terminal part 7 Solder ball This paper size applies to Chinese national standards (CNS) A4 size (210X297mm) installed; Thread (please read the precautions on the back before filling this page) -87- 560017 A7 V. Description of the invention (42 0 through-hole 2 1 conductor section (please read the back first (Notes to fill out this page)

、1T 線 經濟部智慧財產局員工消費合作社印製 本紙張尺度適用中國國家標準（CNS ) Α4規格（210Χ 297公釐） -88 -Line 1T Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs

Claims (1)

560017 8 8 8 8 ABCD560017 8 8 8 8 ABCD 修正 經濟部智慧財產局員工消費合作社印製 六、申請專利範圍 第91 1 1 5440號專利申請案 中文申請專利範圍修正本 _ 民國92年8月22日修正 1 . 一種半導體連接基板，屬於將半導體元件連接於 印刷基板等的安裝基板的半導體連接基板，其特徵爲具有 :絕緣性基板，及設在上述絕緣性基板上的面積不相同的 複數電極及從夾在其中間的介質材料所構成的電容器元件 ，及感應器元件，電阻元件所選擇的一或複數元件，及連 接上述元件的金屬配線，及上述金屬配線的一部分的.金屬 端子部，及覆蓋除了上述元件及金屬端子部之外的金屬配 線部分的周圍的有機絕緣材。 2 · —種半導體連接基板，屬於將半導體元件連接於 印刷基板等的安裝基板的半導體連接基板，其特徵爲具有 :絕緣性基板，及設在上述絕緣性基板上的複數電極，及 從夾在其中間的介質材料所構成的電容器元件，及感應器 元件，電阻元件所選擇的一或複數元件，及設在上述電極 的端部以外的部分的連接部，及連接上述元件%金屬配線 ，及上述金屬配線的一部分的金屬端子部，及覆蓋除了上 述元件及上述金屬端子部之外的金屬配線部分的周圍的有 機絕緣材。 3 · —種半導體連接基板，屬於將半導體元件連接於 印刷基板等的安裝基板的半導體連接基板，其特徵爲具有 :絕緣性基板，及設在上述絕緣性基板上的複數電極，及 從夾在其中間的介質材料所構成的電容器元件，及感應器 本紙張尺度適用中國國家標準（CNS ) A4規格（210 X 297公釐） ----------------訂------Aw. (請先閲讀背面之注意事項再填寫本頁) 560017 A8 B8 C8 D8 七、申請專利範圍 2 (請先閱讀背面之注意事項再填寫本頁) 元件，電阻元件所選擇的一或複數元件，及連接上述元件 的金屬配線，及上述金屬配線的一部分且格子狀地排列的 金屬端子部，及覆蓋除了上述元件及金屬端子部之外的金 屬配線部分的周圍的有機絕緣材。 4 . 一種半導體連接基板，屬於將半導體元件連接於 印刷基板等的安裝基板的半導體連接基板，其特徵爲具有 :絕緣性基板，及設在上述絕緣性基板上的複數電極，及 從夾在其中間的介質材料所構成的電容器元件，及感應器 元件，電阻元件所選擇的一或複數元件，及連接上述.元件 的金屬配線，及上述金屬配線的一部分的金屬端子部，及 覆蓋除了上述元件及上述金屬端子部之外的金屬配線部分 的周圍的有機絕緣材。 5 ·如申請專利範圍第1項至第4項中任一項所述的 半導體連接基板，其中，複數電極及夾在其中間的介質材 料所構成的電容器元件，及感應器元件，電阻元件及上述 絕緣性基板之距離不相同。 6 ·如申請專利範圍第1項至第4項中任一項所述的 半導體連接基板，其中，絕緣性基板爲玻璃基板。 經濟部智慧財產局員工消費合作社印製 7 ·如申請專利範圍第1項至第4項中任一項所述的 半導體連接基板，其中，有機絕緣材爲感光性有彳¥邀緣材 〇 8 ·如申請專利範圍第1項至第4項中任一項所述的 半導體連接基板，其中，有機絕緣材含有以一般式〔化1 〕所表示的苯乙烯基的交聯成分，又含有重量平均分子量 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） 560017 A8 B8 C8 D8 _ 六、申請專利範圍 5 0 0 0以上的高分子量體的低介質分離率樹脂組成物， 【化1〕Revised the printing by the Employees' Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs. 6. Application for Patent Scope No. 91 1 1 5440. Chinese Patent Application Amendment _ Amendment on August 22, 1992. 1. A semiconductor connection substrate, which A semiconductor connection substrate, which is connected to a mounting substrate such as a printed circuit board, has an insulating substrate, a plurality of electrodes having different areas provided on the insulating substrate, and a dielectric material sandwiched therebetween. Capacitor elements, inductor elements, one or more elements selected for resistance elements, and metal wiring connecting the above elements, and a part of the above metal wiring. Metal terminal parts, and covering other than the above elements and metal terminal parts An organic insulating material around the metal wiring portion. 2. A semiconductor connection substrate, which belongs to a semiconductor connection substrate that connects a semiconductor element to a mounting substrate such as a printed circuit board, and includes a dielectric substrate, a plurality of electrodes provided on the dielectric substrate, and A capacitor element composed of a dielectric material therebetween, an inductor element, one or more elements selected for a resistance element, and a connection portion provided at a portion other than an end portion of the electrode, and a metal wiring connecting the above element, and A metal terminal portion that is a part of the metal wiring, and an organic insulating material that covers the periphery of the metal wiring portion except the element and the metal terminal portion. 3. A semiconductor connection substrate, which belongs to a semiconductor connection substrate that connects a semiconductor element to a mounting substrate such as a printed circuit board, and includes a dielectric substrate, a plurality of electrodes provided on the dielectric substrate, and Capacitor element composed of intermediate dielectric material and inductor This paper size applies to China National Standard (CNS) A4 specification (210 X 297 mm) ---------------- Order ------ Aw. (Please read the precautions on the back before filling this page) 560017 A8 B8 C8 D8 VII. Patent application scope 2 (Please read the precautions on the back before filling this page) One or more elements selected, and metal wirings connecting the elements, and metal terminal portions arranged in a grid pattern as part of the metal wirings, and organic covering the periphery of the metal wiring portions other than the elements and the metal terminal portions. Insulation. 4. A semiconductor connection substrate, which belongs to a semiconductor connection substrate for connecting a semiconductor element to a mounting substrate such as a printed circuit board, comprising: an insulating substrate; a plurality of electrodes provided on the insulating substrate; and sandwiched therebetween. Capacitor elements composed of dielectric materials, inductor elements, resistance elements, one or more elements selected, and metal wiring connecting the above elements, and metal terminal parts of the metal wiring, and covering in addition to the above elements And an organic insulating material around a metal wiring portion other than the metal terminal portion. 5. The semiconductor connection substrate according to any one of items 1 to 4 of the scope of patent application, wherein a capacitor element composed of a plurality of electrodes and a dielectric material interposed therebetween, and an inductor element, a resistance element, and The distance between the insulating substrates is different. 6. The semiconductor connection substrate according to any one of claims 1 to 4, wherein the insulating substrate is a glass substrate. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs7. The semiconductor connection substrate as described in any one of the first to the fourth of the patent application scope, wherein the organic insulating material is a photosensitive material. The semiconductor connection substrate according to any one of claims 1 to 4, wherein the organic insulating material contains a styrene-based cross-linking component represented by the general formula [Chem. 1], and further contains a weight The average molecular weight of this paper applies the Chinese National Standard (CNS) A4 specification (210X297 mm) 560017 A8 B8 C8 D8 1〕 (請先閱讀背面之注意事項再填寫本頁) (但，R是表示取代基也有良好的碳化氫骨架，R 1是表 示氫，甲基，乙基的任一種；m是表示1至4的整數；η 是表示2以上的整數）。 9 ·如申請專利範圍第1項至第4項中任一項所述的 半導體連接基板，其中，有機絕緣材爲聚醯亞胺樹脂。 1 〇 .如申請專利範圍第1項至第4項中任一項所述 的半導體連接基板，其中，有機絕緣材爲苯醯基環丁烯（ B C Β ) ° 經濟部智慧財產局員工消費合作社印製 1 1 ·如申請專利範圍第1項至第4項中任一項所述 的半導體連接基板，其中，介質材料爲Ta ，Mg，Sr 的任一種氧化物。 1 2 · —種半導體連接基板，屬於將半導體元件連接 於印刷基板等的安裝基板的半導體連接基板，其特徵爲具 有：在所定位置設有貫通孔的絕緣性基板，及設在上述絕 緣性基板的主面與副主面的兩面或單面的面積不相同的複 數電極及從夾在其中間的介質材料所構成的電容器元件， 本紙張尺度適用中國國家標準（CNS ) A4規格（210 X 297公釐） 560017 A8 B8 C8 D8 __ 六、申請專利範圍 4 (请先閲讀背面之法意事項系壤寫本頁) 及感應器元件，電阻元件所選擇的一或複數元件，及連接 上述元件的金屬配線，及形成在電氣式連接上述金屬配線 的上述貫通孔的內部的導體部，及上述金屬配線的一部分 的金屬端子部，及覆蓋除了上述元件及金屬端子部之外的 金屬配線部分的周圍的有機絕緣材。 1 3 · —種半導體連接基板，屬於將半導體元件連接 於印刷基板等的安裝基板的半導體連接基板，其特徵爲具 有：在所定位置設有貫通孔的絕緣性基板，及設在上述絕 緣性基板的主面與副主面的兩面或單面的複數電極及.從夾 在其中間的介質材料所構成的電容器元件，及感應器元件 ，電阻元件所選擇的一或複數元件，及設在上述電極的瑞 部的以外的部分的連接部，及連接上述元件與上述連接部 的金屬配線，及形成在電氣式連接上述金屬配線的上述貫 通孔的內部的導體部，及上述金屬配線的一部分的且格子 狀地排列的金屬端子部，及覆蓋除了上述元件及金屬端子 部之外的金屬配線部分的周圍的有機絕緣材。 經濟部智慧財產局員工消費合作社印製 1 4 · 一種半導體連接基板，屬於將半導體元件連接 於印刷基板等的安裝基板的半導體連接基板，其特徵爲具 有：在所定位置設有貫通孔的絕緣性基板，及設在上述絕 緣性基板的主面與副主面的兩面或單面的複數電極及從夾 在其中間的介質材料所構成的電容器元件，及感應器元件 ，電阻元件所選擇的一或複數元件，及連接上述元件的金 屬配線，及形成在電氣式連接上述金屬配線的上述貫通孔 的內部的導體部，及上述金屬配線的一部分的且格子狀地 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） 560017 A8 B8 C8 D8 六、申請專利範圍 排列的金屬端子部，及覆蓋除了上述元件及金屬端子部之 外的金屬配線部分的周圍的有機絕緣材。 (請先閲讀背面之注意事項再填寫本頁) 1 5 · —種半導體連接基板，屬於將半導體元件連接 於印刷基板等的安裝基板的半導體連接基板，其特徵爲具 有：在所定位置設有貫通孔的絕緣性基板，及設在上述絕 緣性基板的主面與副主面的兩面或單面的複數電極及從夾 在其中間的介質材料所構成的電容器元件，及感應器元件 ，電阻元件所選擇的一或複數元件，及連接上述元件的金 屬配線，及形成在電氣式連接上述金屬配線的上述貫·通孔 的內部的導體部，及上述金屬配線的一部分的金屬端子部 ，及覆蓋除了上述元件及金屬端子部之外的金屬配線部'分 的周圍的有機絕緣材。 1 6 · —種半導體連接基板，屬於將半導體元件連接 經濟部智慧財產局員工消费合作社印製 於印刷基板等的安裝基板的半導體連接基板，其特徵爲具 有：在所定位置設有貫通孔的絕緣性基板，及設在上述絕 緣性基板的主面與副主面的兩面或單面的複數電極及從夾 在其中間的介質材料所構成的電容器元件，及感應器元件 ，電阻元件所選擇的一或複數元件，及連接上述元件的金 屬配線，及形成在電氣式連接上述金屬配線的上述貫通孔 內部的導體部，及上述金屬配線的一部分的金屬端子部， 及覆蓋除了設於上述絕緣性基板的主面的上述元件與上述 金屬端子部之外的金屬配線部分的周圍的複數第一有機絕 緣材，及覆蓋除了設於上述絕緣性基板的副主面的上述元 件與上述金屬端子部之外的金屬配線部分的周圍的複數第 本紙張尺度適用中國國家標準（CNS〉A4規格（210 X297公釐） 560017 A8 B8 C8 D8 六、申請專利範圍 6 二有機絕緣材。 (請先閲讀背面之注意事項再填寫本頁) 1 7 · —種半導體連接基板，屬於將半導體元件連接 於印刷基板等的安裝基板的半導體連接基板，其特徵爲具 有：在·所定位置設有貫通孔的絕緣性基板，及設在上述絕 緣性基板的主面與副主面的兩面或單面的複數電極及從夾 在其中間的介質材料所構成的電容器元件，及感應器元件 ，電阻元件所選擇的一或複數元件，及連接上述元件的金 屬配線，及形成在電氣式連接上述金屬配線的上述貫通孔 內部的導體部，及上述金屬配線的一部分且設在與上.述感 應器元件不相同面的金屬端子部，及覆蓋除了上述元件及 上述金屬端子部之外的金屬配線部分的周圍的有機絕緣材 〇 經濟部智慧財產局員工消費合作社印製 1 8 · —種半導體連接基板，屬於將半導體元件連接 於印刷基板等的安裝基板的半導體連接基板，其特徵爲具 有：在所定位置設有貫通孔的絕緣性基板，及設在上述絕 緣性基板的主面與副主面的兩面或單面的複數電極及從夾 在其中間的介質材料所構成的電容器元件，及感應器元件 ，電阻元件所選擇的一或複數元件，及連接上述元件的金 屬配線，及形成在電氣式連接上述金屬配線的上述貫通孔 內部的導電性物質及核形成物質及玻璃所構成導體部，及 上述金屬配線的一部分的金屬端子部，及覆蓋除了上述元 件及上述金屬端子部之外的金屬配線部分的周圍的有機絕 緣材。 1 9 ·如申請專利範圍第1 2項至第1 8項中任一項 本紙張尺度適用中國國家標準（CNS ) A4規格（21ϋ Χ297公釐） 560017 A8 B8 C8 _ D8 六、申請專利範圍 7 所述的半導體連接基板，其中，複數電極及夾在其中間的 介質材料所構成的電容器元件，及感應器元件，電阻元件 及上述絕緣性基板之距離不相同。 (請先閱讀背面之注意事項再填寫本頁) 2 0 ·如申請專利範圍第1 2項至第1 8項中任一項 所述的半導體連接基板，其中，絕緣性基板爲玻璃基板。 2 1 ·如申請專利範圍第1 2項至第1 8項中任一項 所述的半導體連接基板，其中，有機絕緣材爲感光性有機 絕緣材。 2 2 ·如申請專利範圍第1 2項至第1 8項中任.一項 所述的半導體連接基板，其中，有機絕緣材含有以一般式 〔化1〕所表示的苯乙烯基的交聯成分，又含有重量平均 分子量5 0 0 0以上的高分子量體的低介質分離率樹脂組 成物， 【化1〕(Please read the notes on the back before filling in this page) (However, R means that the substituent also has a good hydrocarbon skeleton, R 1 means any one of hydrogen, methyl, and ethyl; m means 1 to 4 An integer; η is an integer representing 2 or more). 9. The semiconductor connection substrate according to any one of claims 1 to 4, wherein the organic insulating material is a polyimide resin. 1 〇. The semiconductor connection substrate according to any one of items 1 to 4 in the scope of the patent application, wherein the organic insulating material is phenylfluorenylcyclobutene (BC Β) ° Consumers' Cooperative of Intellectual Property Bureau of the Ministry of Economic Affairs Print 1 1 · The semiconductor connection substrate according to any one of claims 1 to 4 in the scope of patent application, wherein the dielectric material is any one of Ta, Mg, and Sr oxides. 1 2 · A semiconductor connection substrate, which belongs to a semiconductor connection substrate that connects a semiconductor element to a mounting substrate such as a printed circuit board, and includes an insulating substrate provided with through holes at predetermined positions, and the insulating substrate. A capacitor element composed of a plurality of electrodes with different areas on the two or one side of the main surface and the sub-primary surface and a dielectric material sandwiched between them. This paper size applies to the Chinese National Standard (CNS) A4 specification (210 X 297). Mm) 560017 A8 B8 C8 D8 __ VI. Scope of patent application 4 (please read the French and Italian matters on the back to write this page) and inductor components, one or more components selected for resistance components, and the components connected to the above components A metal wiring, a conductor portion formed inside the through hole that electrically connects the metal wiring, a metal terminal portion that is a part of the metal wiring, and a periphery of the metal wiring portion excluding the element and the metal terminal portion Organic insulation. 1 3 · A semiconductor connection substrate, which belongs to a semiconductor connection substrate that connects a semiconductor element to a mounting substrate such as a printed circuit board, and includes an insulating substrate provided with through-holes at predetermined positions, and the insulating substrate. The two or single-sided plural electrodes of the main surface and the sub-main surface of the capacitor and the capacitor element composed of the dielectric material sandwiched therebetween, and one or more elements selected from the inductor element and the resistance element, and provided in the above A connection portion other than the swivel portion of the electrode, a metal wiring connecting the element and the connection portion, and a conductor portion formed inside the through hole electrically connecting the metal wiring, and a portion of the metal wiring The metal terminal portions arranged in a grid pattern, and the organic insulating material covering the periphery of the metal wiring portion other than the element and the metal terminal portion. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 1 4 · A semiconductor connection substrate, which belongs to a semiconductor connection substrate that connects a semiconductor element to a mounting substrate such as a printed circuit board, and is characterized in that it has insulating properties with through-holes at predetermined positions. A substrate, a capacitor element composed of a plurality of electrodes provided on both sides of a main surface and a sub-main surface of the insulating substrate, or a single surface, and a capacitor element composed of a dielectric material sandwiched therebetween, and an inductor element or a resistance element selected Or a plurality of elements, and metal wiring connecting the elements, and a conductor portion formed inside the through-hole electrically connecting the metal wiring, and a part of the metal wiring in a grid pattern. The paper standard is applicable to Chinese national standards ( CNS) A4 specification (210X297 mm) 560017 A8 B8 C8 D8 6. Metal terminal parts arranged in the scope of patent application, and organic insulating material covering the surroundings of metal wiring parts other than the above components and metal terminal parts. (Please read the precautions on the back before filling in this page) 1 5 · —Semiconductor connection substrates, which are semiconductor connection substrates that connect semiconductor elements to mounting substrates such as printed circuit boards, are characterized by having a through hole at a predetermined position. Hole, an insulating substrate, a capacitor element composed of a plurality of electrodes provided on both sides of the main surface and the sub-main surface of the insulating substrate, or a single surface, and a capacitor element composed of a dielectric material sandwiched therebetween, and an inductor element and a resistance element The selected one or more elements, and metal wirings connecting the elements, and conductor portions formed inside the through-holes electrically connecting the metal wirings, and metal terminal portions of a part of the metal wirings, and coverings An organic insulating material around the metal wiring portion other than the above-mentioned element and the metal terminal portion. 1 ··· A semiconductor connection substrate, which is a semiconductor connection substrate printed on a mounting substrate such as a printed circuit board by a consumer cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs, and is characterized in that it has insulation provided with through holes at predetermined positions. The substrate is selected from the group consisting of a flexible substrate, a plurality of electrodes provided on both sides of the main surface and a sub-main surface of the insulating substrate, or a single surface, and a capacitor element composed of a dielectric material sandwiched therebetween, and an inductor element and a resistance element. One or more elements, and metal wiring connecting the elements, and a conductor portion formed inside the through hole electrically connecting the metal wiring, and a metal terminal portion of a part of the metal wiring, and covering in addition to the insulation provided A plurality of first organic insulating materials around the element on the main surface of the substrate and a metal wiring portion other than the metal terminal portion; and the element and the metal terminal portion covering the element other than the sub-main surface provided on the insulating substrate The plural paper sizes around the outer metal wiring part apply the Chinese national standard CNS> A4 specification (210 X297 mm) 560017 A8 B8 C8 D8 VI. Patent application scope 6 Second organic insulating material (Please read the precautions on the back before filling this page) 1 7 · —A kind of semiconductor connection substrate, which belongs to the A semiconductor connection substrate having a semiconductor element connected to a mounting substrate such as a printed circuit board has an insulating substrate provided with a through hole at a predetermined position, and two or more of the main surface and the sub-main surface of the insulating substrate. A capacitor element composed of a plurality of single-sided electrodes and a dielectric material sandwiched therebetween, and one or more elements selected from an inductor element and a resistance element, and metal wiring connecting the above elements, and the electrical connection formed above A conductive portion inside the through-hole of the metal wiring, a portion of the metal wiring, and a metal terminal portion provided on a surface different from the above-mentioned inductor element, and a metal wiring covering the element other than the element and the metal terminal portion Part of the surrounding organic insulation material printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 1 ··· Semiconductor A connection substrate is a semiconductor connection substrate that connects a semiconductor element to a mounting substrate such as a printed circuit board. The connection substrate includes an insulating substrate provided with through holes at predetermined positions, and a main surface and a sub-main provided on the insulating substrate. Multiple electrodes on one or both sides of the surface, and capacitor elements composed of a dielectric material sandwiched therebetween, and one or more elements selected from inductor elements, resistance elements, and metal wiring connecting the above elements, and formed on Electrically connect the conductive portion inside the through-hole of the metal wiring with a conductive portion formed of a nucleating material and glass, and a metal terminal portion that is a part of the metal wiring, and cover other than the element and the metal terminal portion Organic insulating material around the metal wiring part. 1 9 · If any one of the items 12 to 18 in the scope of patent application, this paper size is applicable to the Chinese National Standard (CNS) A4 specification (21ϋ X297 mm) 560017 A8 B8 C8 _ D8 6. The semiconductor connection substrate according to the scope of patent application 7, wherein a plurality of electrodes and clamps Wherein the dielectric material between the capacitor element is composed, and the inductor element, the distance element and the resistance of the insulating substrate are different. (Please read the precautions on the back before filling in this page) 2 0 · The semiconductor connection substrate as described in any one of the items 12 to 18 in the scope of patent application, wherein the insulating substrate is a glass substrate. 2 1 The semiconductor connection substrate according to any one of items 12 to 18 in the scope of patent application, wherein the organic insulating material is a photosensitive organic insulating material. 2 2 · The semiconductor connection substrate according to any one of items 12 to 18 in the scope of patent application, wherein the organic insulating material contains a styrene-based cross-linking represented by the general formula [Chem. 1] Component, and a low-medium-separation-rate resin composition containing a high-molecular-weight body having a weight average molecular weight of 5,000 or more, [Chem. 1] 經濟部智慧財產局員工消費合作社印製 (但，R是表示取代基也有良好的碳化氫骨架，R 1是表 示氫，甲基，乙基的任一種；m是表示1至4的整數；η 是表示2以上的整數）。 2 3 .如申請專利範圍第1 2項至第1 8項中任一項 本紙張尺度適用中國國家標準（CNS ) Α4規格（2】ϋ X 297公釐） 560017 A8 B8 C8 D8 六、申請專利範圍 8 所述的半導體連接基板，其中，有機絕緣材爲聚醯亞胺樹 2 4 .如申請專利範圍第1 2項至第1 8項中任一項 所述的半導體連接基板，其中，有機絕緣材爲苯醯基環丁 烯（B C B )。 2 5 .如申請專利範圍第1 2項至第1 8項中任一項 所述的半導體連接基板，其中，介質材料爲T a ， M g，S r的任一種氧化物。 (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） -8 - 560017 第9Π15440號專利申請案 年f月修正?汇/補玄 中文圖式修正頁 民國92年8月22曰呈 2/4 第4匱Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs (However, R is a substituent that also has a good hydrocarbon skeleton, R 1 is any of hydrogen, methyl, and ethyl; m is an integer from 1 to 4; η Is an integer representing 2 or more). 2 3. If any of the items 12 to 18 in the scope of the patent application, the paper size applies to the Chinese National Standard (CNS) A4 specifications (2) ϋ X 297 mm) 560017 A8 B8 C8 D8 The semiconductor connection substrate according to the scope 8, wherein the organic insulating material is a polyimide tree 2 4. The semiconductor connection substrate according to any one of the claims 12 to 18 in the patent application scope, wherein the organic The insulating material is phenylfluorenylcyclobutene (BCB). 25. The semiconductor connection substrate according to any one of items 12 to 18 in the scope of patent application, wherein the dielectric material is any one of oxides of Ta, Mg, and Sr. (Please read the notes on the back before filling out this page) The paper size printed by the Employees' Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs applies to the Chinese National Standard (CNS) A4 specification (210X297 mm) -8-560017 Patent Application No. 9Π15440 Revised in F / Y? Hui / Buxuan Chinese Schema Revised Page August 22, 1992, 2/4, 4th 第5匱5th
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