TW558782B - Fabrication method for strengthened flip-chip solder bump - Google Patents

Fabrication method for strengthened flip-chip solder bump Download PDF

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Publication number
TW558782B
TW558782B TW091120550A TW91120550A TW558782B TW 558782 B TW558782 B TW 558782B TW 091120550 A TW091120550 A TW 091120550A TW 91120550 A TW91120550 A TW 91120550A TW 558782 B TW558782 B TW 558782B
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Taiwan
Prior art keywords
solder bump
layer
dielectric layer
flip
solder
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TW091120550A
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English (en)
Inventor
Ke-Chuan Yang
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Siliconware Precision Industries Co Ltd
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Priority to TW091120550A priority Critical patent/TW558782B/zh
Priority to US10/400,349 priority patent/US6821876B2/en
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Publication of TW558782B publication Critical patent/TW558782B/zh

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    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L24/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
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  • Engineering & Computer Science (AREA)
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  • Microelectronics & Electronic Packaging (AREA)
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  • Manufacturing & Machinery (AREA)
  • Wire Bonding (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Description

558782 ^S_iU20550 五、發明說明（1) [發明領域] 本發明係有關於一種半導體晶片封裝技術，特別是有 關於一種可確保銲塊底部金屬化結構層之銲結力的覆晶銲 塊製程，其可用以形成銲塊（s〇lder Bump)於一半導體晶 片上的 I干塊底口p 至屬化（Under_Bump Metallurgy，υΒΜ)έ+ 構層亡，並y於此製程中防止UM結構層產生氧化現象及= 文到巧染’藉此而確保製成之銲塊與UM結構層之間豆有 強固的銲結力而提昇晶片封裝的品質可靠性。 /、 [發明背景] ^覆晶式（FI ip-Chip，FC)半導體封裝技術為一種先進 之半導體封裝技術，其與一般習知之銲線式（Wire B〇nd) 封裝技術的最主要不同點在於其中所封裝之半導體晶片係 以^面朝下之倒置方式安置於基板（Substrat〇上，並藉 由複數個銲塊（Solder Bumps)而銲結及電性連接至基板。 由於覆晶式封裝結構體中不需要使用較佔空間之銲線 (B〇ndlng Wlres)來將半導體晶片電性連接至基板，因此 可使得整體尺寸作得更為輕薄短小。 欲將銲塊銲結於半導體晶片± ’首先須在半導體 的輸出入辉塾（I/0 Pads)上形成所謂之銲塊底部金屬化 (Under Bump Metallurgy，UBM)結構層’其特性在於對铲 墊（一般為鋁製程所形成）和銲塊（―般為錫鉛合金所形成于 均具有強固之鍵結力；接著便可將銲料施加至υβΜ結構層 二，^接著經迴銲程序（Reflow)之後，便可形成所需之銲 塊。由於UBM結構層對銲墊和銲塊均具有強固之鍵結力， 558782 --t^_9112055Q 亨 / 年 β 月次日__ 五、發明說明（2) 因此可使得銲塊牢固地銲結至晶片的銲墊上而不易產生脫 落現象。 目前已有許多各式不同的習知技術可用來進行覆晶銲 塊製程’例如包括電鍵技術（E 1 e c t r 〇 p 1 a ^ i n g )、網印技術 (Screen Printing)、蒸鑛技術（Evaporation)、等等。
然而習知之覆晶銲塊製程的一項缺點在於UBM結構層 於進彳亍#塊電錢程序之前會曝露於空氣中，並且會受到驗 性之光阻顯影液的浸染而產生表面氧化及污染的問題，致 使後續電鍍上的銲塊與UBM結構層之間的銲結力降低而產 生品質的可靠性問題。 目前已有許多相關於UBM製程的專利技術，例如包括 以下所列之美國專利： •美國專利申請公告US2 00 2/ 0 0 72 2 1 5號"METHOD FOR FORMING BARRIER LAYERS FOR SOLDRE BUMPS丨丨。 •美國專利第 5, 268, 072號"ETCHING PROCESSES FOR AVOIDING EDGE STRESS IN SEMICONDUCTOR CHIP SOLDER BUMPS1，； •美國專利第 5, 5 0 3, 2 8 6號 n ELECTROPLATED SOLDER TERMINAL’，；
•美國專利第 5, 9 3 7, 3 2 0號 ” BARRIER LAYERS FOR ELECTROPLATED SNPB EUTECTIC SOLDER JOINTS”； •美國專利第 6, 2 9 7, 1 4 0號1’ METHOD TO PLATE C4 TO COPPER STUD，，。
美國專利申請公告US 2 0 02 / 0 0 72 2 1 5號對於前述之UBM
16932石夕品· ptc 第6頁 558782 _—案號91120550 7/年，。月屮日 _ 五、發明說明（3) ""~ 結構層氧化及污染問題所提出的解決方法為在結構層 上黾鍍一 6¾時性的隔絕層（B a r r i e r L a y e r )來防止u Β Μ結構 層不被氧化及污染；再於最後將此隔絕層以特殊之化學溶 劑來將其移除。然而此作法的缺點在於其會增加製程複雜 度，且化學溶劑具有較差的環保性。其它的美國專利則均 未能對前述之UBM結構層氧化及污染問題提出有效的解決 方法。 、 [發明概述] 馨於以上所述習知技術之缺點，本發明之主要目的便 疋在於提供一種可確保UBM結構層之銲結力的覆晶銲塊製 程’其可防止UBM結構層於電鍍銲塊之前產生氧化及受到 污染’藉此而確保電鍍上的銲塊與UBM結構層之間的銲結 力而提昇晶片封裝的品質可靠性。 本發明之另一目的在於提供一種可確保UBM結構層之 銲結力的覆晶銲塊製程，其可不必使用到化學溶劑，藉以 使得製程具有較佳的環保性。 本發明之覆晶銲塊製程可用以形成銲塊（Solder Bump)方、半‘體晶片上的銲塊底部金屬化（Under-Bump M e t a 1 1 u r g y ’ u B Μ )結構層上，並可於此製程中防止u B Μ結 構層產生氧化現象及受到污染，藉此而確保製成之銲塊與 UBM結構層之間具有強固的銲結力而提昇晶片封裝的品質 可靠性。 本發明之覆晶銲塊製程的特點在於形成一介電層於 UBM結構層上、且該介電層的材質例如為苯環丁烯
16932石夕品.ptc 第7頁 558782 -一 案號91120550 ?/年P月夕日 修正 _ 五、發明說明（4) (Benzo-Cyclo-Butene，BCB)、或聚亞醯胺（Polyimide)， 用以保護銲塊底部金屬化結構層不會產生氧化現象及受到 污染，並於後續程序採用電漿蝕刻方法來移除此介電層。 由於電漿蝕刻程序不需採用化學溶劑，因此具有較佳的環 保性。 [發明實施例] 以下即配合所附之圖式，詳細揭露說明本發明之可確 保可破保UBM結構層之銲結力的覆晶銲塊製程之實施例。 第1圖之剖面結構示意圖即顯示一已完成υβΜ製程的半 導體晶片1 〇的剖面結構形態。如圖所示，此半導體晶片丄〇 的表面上形成有複數個輸出入銲墊（I/() Pads)1丨，用以作 為该半導體晶片1 0之内部電路（未於圖式中顯示）的電源及 信號輸出入連接點。此外，半導體晶片丨〇的表面上形成有 一絕緣性保護層（passivati〇n Layer)20，用以覆蓋銲塾 1 1以外的所有區域；而絕緣性保護層2 〇及所有銲墊1丨的上 方則形成有一銲塊底部金屬化（Under-Bump Metallurgy， UBM)結構層30。由於此UBM結構層30的形成方法係採用習 知之UBΜ製程技術，因此以下將不對其中之細節步驟作詳 細之說明。 本發明之覆晶銲塊製程的目的即為於上述之各個銲墊 1 1上的U Β Μ結構層3 0上形成銲塊（S ο 1 d e r B u m p s )，並可於 此銲塊製程中防止UBM結構層30的表面產生氧化現象及受 到污染。以下即配合所附之圖式中的第2A至2F圖來詳細說 明本發明之覆晶銲塊製程中的各個程序步驟。
16932石夕品· ptc 第8頁 558782 -- 案號91120550 f7年/。月汐日 修正_ 五、發明說明（5) 請首先參閱第2A圖，首先於UBM結構層30上形成一介 電層40，用以覆蓋UBM結構層30的所有表面。此介電層40 的材質可例如為苯環丁烯（Benzo-Cyclo-Butene，BCB)、 或聚亞醯胺（P〇ly imide)，並採用塗佈技術來形成於UBM結 構層3 0上。由於苯環丁烯或聚亞醯胺塗佈技術均為半導體 業界習用之製程技術，因此以下將不對其中之細節步驟作 詳細之說明。 請接著參閱第2 B圖，下一個步驟為形成一光阻層 (Photoresist Layer)5 0於介電層4 0上；其中該光阻層50 形成有複數個窗口 5 1，分別用以曝露出該介電層4 0中位於 各個鮮墊1 1上方的部分。由於此光阻層5 〇及其窗口 5 1的形 成方法為採用習知之微影製程技術（ph〇t〇1 i th〇graphic Process) ’因此以下將不對其中之細節步驟作詳細之說 。凊接著苓閱第2 C圖，下一個步驟為進行一介電層蝕刻 ::屏ΐ: ΐ為採用電漿蝕刻程序，來將介電層40中未被 1的部分移除，藉此而曝露出其下方之_ °二二\即各個輝塾1 1上方之UBM結構層3 0 )。 其中！ ϊ ΐ i: ϊ2D圖’下-個步驟為進行-電鍍程序； S出的ΠΚΑΗ士于；斗透過光阻層50中的各個窗口 51而電鍍至曝 路出的UBM結構屏qn，古r t 私敬王嵊 滿為止，藉此1 Λ 至大致將光阻層50中的窗口 51填 51之中。 而形成一銲塊（solder Blimp) 60於各個窗口 明接者參閱第2£;圖，下一個步驟為將整個的光阻層5〇
第9頁 558782 修正 案號 91120550 五、發明說明（6) 及所有剩餘之介電層4 0全部移除。光阻層5 0的移除方法可 採用習知之光阻蝕刻技術；而剩餘之介電層4 0的移除方法 則例如亦採用電漿蝕刻程序。 請接著參閱第2 F圖，下一個步驟為進行一蝕刻程序， 藉此而將UBM結構層3 0中未被該些銲塊6 0所覆蓋住的部分 全部移除。此即完成本發明之覆晶銲塊製程。 後續之完成覆晶封裝之各個程序，包括迴銲程序、覆 晶程序、封裝程序、等等，均可採用習知之程序，其非關 本發明之實質技術内容與範圍，因此以下將不對此些後續 程序作進一步詳細之說明。 综而言之，本發明提供了 一種可確保銲塊底部金屬化 結構層之銲結力的覆晶銲塊製程，其特點在於形成一介電 層於U Β Μ結構層上、且該介電層的材質例如為苯環丁烯 (Benzo-Cyclo-Butene， BCB)、或聚亞酸胺（Polyimide)， 用以保 污染； 移除此 此具有 進步性 以 定本發 係廣義 之技術 為完全 此專利 護銲塊底 並於後續 介電層。 較佳的環 及實用性 上所述僅 明之實質 地定義於 實體或方 相同、或 範圍之中 部金屬 程序採 由於電 保性。 化結構層不 用電漿蝕刻 漿蝕刻程序 本發明因此 為本發明之較佳實 技術内容的範圍。 下述之申請專利範 法，若是與下述之 是為一種等效之變 會產生氧化現象及受到 方法來部分蝕刻或整個 不需採用化學溶劑，因 較習知技術具有更佳之 施例而已，並非用以限 本發明之實質技術内容 圍中。任何他人所完成 申請專利範圍所定義者 更，均將被視為涵蓋於
16932石夕品· ptc 第10頁 558782 案號 91120550 今/ 年月/曰 修正 圖式簡單說明 [圖式簡述] 本發明之實質技術内容及其實施例已用圖解方式詳細 揭露繪製於本說明書所附之圖式之中。此些圖式之内容簡 述如下： 第1圖為一剖面結構示意圖，其中顯示一已完成UBM製 程的半導體晶片的剖面結構形態； 第2 A至2 F圖為剖面結構示意圖，其分別用以顯示本發 明之覆晶銲塊製程中的各個程序步驟。 [圖式標號說明]
10 半導體晶片 11 銲墊 20 絕緣性保護層 30 銲塊底部金屬化結構層 (Under-Bump Metallurgy5 UBM) 4 0 介電層 50 光阻層 5 1 光阻層5 0上的窗口 60 銲塊（Solder Bumps)
第11頁 16932 矽品.ptc

Claims (1)

  1. 558782 ^^1U20550 申請專利範圍 一種覆晶銲塊. 半導#曰Μ μ ，其可應用於一半導體晶片、且該 荦芸二日曰々曰形成有複數個銲墊、而該毪銲墊上則已 歧銲墊上方的ΐ:屬結構層’用以形成銲塊於該 一力的鲜塊底部金屬化結構層上； 此覆晶銲塊製程至少包含： (1)形成一介電層於該銲塊底部金； …⑺形成-光阻層於該介電層上；其;匕;阻層形 成=稷數個窗口，分別用以曝露出該介電層中位於各 個銲墊上方的部分； 曰 (3 )將孩"電層中未被該光阻層所罩蓋的部分移除 (4) 於該光阻層中的各個窗口中分別形成一銲塊； (5) 將4光阻層全部移除’並接著將該介電層的剩 餘部分亦全部移除；以及 (6 )將該銲塊底部金屬化結構層中位於該銲塊以外 的部分移除。 ' ° 2·如申請專利範圍第1項所述之覆晶銲塊製程，其中步驟 (1)中所述之介電層的材質為苯環丁烯（Benz〇—Cyclo_ Butene，BCB ) ° 3. 如申請專利範圍第1項所述之覆晶銲塊製程，其中步驟 (:^中所述之介電層的材質為聚亞醯胺^“““心）。 4. 如申請專利範圍第1項所述之覆晶銲塊f程，直中步驟 (3)係採用電t蝕刻技術來移除該介電層中未被該光阻 層所罩蓋的部分。
    558782 _案號 91120550_今/年广月W曰_iMi_ 六、申請專利範圍 5. 如申請專利範圍第1項所述之覆晶銲塊製程，其中步驟 (4 )係採用電鍍程序來於該光阻層中的各個窗口中形成 銲塊。 6. 如申請專利範圍第1項所述之覆晶銲塊製程，其中步驟 (5 )係採用電漿蝕刻技術來移除該介電層的剩餘部分。 7. —種覆晶銲塊製程，其可應用於一半導體晶片、且該 半導體晶片上形成有複數個銲墊、而該些銲墊上則已 覆蓋有一銲塊底部金屬化結構層，用以形成銲塊於該 些銲墊上方的銲塊底部金屬化結構層上； 此覆晶銲塊製程至少包含： (1) 形成一介電層於該銲塊底部金屬化結構層上； (2) 形成一光阻層於該介電層上；其中該光阻層形 成有複數個窗口，分別用以曝露出該介電層中位於各 個銲墊上方的部分； (3 )進行一電漿蝕刻程序，藉以將該介電層中未被 該光阻層所罩蓋的部分移除； (4 )於該光阻層中的各個窗口中分別形成一銲塊； (5 )將該光阻層全部移除；並接著進行一電漿蝕刻 程序，藉以將該介電層的剩餘部分亦全部移除；以及 (6 )將該銲塊底部金屬化結構層中位於該銲塊以外
    16932矽品.ptc 第13頁 558782 _案號91120550_f/年P月/曰 修正_ 六、申請專利範圍 9.如申請專利範圍第7項所述之覆晶銲塊製程，其中步驟 (1)中所述之介電層的材質為聚亞胺（Polyimide)。 1 0 .如申請專利範圍第7項所述之覆晶銲塊製程，其中步驟 (4 )係採用電鍍程序來於該光阻層中的各個窗口中形成 録塊。 1 1. 一種覆晶銲塊製程，其可應用於一半導體晶片、且該 半導體晶片上形成有複數個銲墊、而該些銲墊上則已 覆蓋有一銲塊底部金屬化結構層，用以形成銲塊於該 些銲墊上方的銲塊底部金屬化結構層上； 此覆晶銲塊製程至少包含： (1)形成一介電層於該銲塊底部金屬化結構層上； (2 )形成一光阻層於該介電層上；其中該光阻層形 成有複數個窗口，分別用以曝露出該介電層中位於各 個銲墊上方的部分； (3 )進行一電漿蝕刻程序，藉以將該介電層中未被 該光阻層所罩蓋的部分移除； (4 )進行一電鍍程序，藉此而於該光阻層中的各個 窗口中分別形成一銲塊； (5 )將該光阻層全部移除；並接著進行一電漿蝕刻 程序，藉以將該介電層的剩餘部分亦全部移除；以及 (6 )將該銲塊底部金屬化結構層中位於該銲塊以外 的部分移除。 1 2 .如申請專利範圍第1 1項所述之覆晶銲塊製程，其中步 驟（1 )中所述之介電層的材質為苯環丁烯 （B e η ζ 〇 -
    16932矽品.ptc 第14頁 558782
    16932矽品.ptc 第15頁
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