TW529137B - Semiconductor device - Google Patents

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Publication number
TW529137B
TW529137B TW091105391A TW91105391A TW529137B TW 529137 B TW529137 B TW 529137B TW 091105391 A TW091105391 A TW 091105391A TW 91105391 A TW91105391 A TW 91105391A TW 529137 B TW529137 B TW 529137B
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flexible
connection
semiconductor
tape
band
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TW091105391A
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Naoto Kimura
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Nec Corp
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    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/4985—Flexible insulating substrates
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/10—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices having separate containers
    • H01L25/105—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices having separate containers the devices being of a type provided for in group H01L27/00
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05599—Material
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/8538—Bonding interfaces outside the semiconductor or solid-state body
    • H01L2224/85399—Material
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    • H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
    • H01L2225/10—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers
    • H01L2225/1005—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers the devices being of a type provided for in group H01L27/00
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    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/153—Connection portion
    • H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
    • H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L2924/181—Encapsulation
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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Wire Bonding (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)

Description

529137
五、發明說明（1) 【發明背景】 1 ·發明之領域 本發明係關於一種半導體裝置， 封裝結構的半導體裝置。 尤有關一種表面黏著 2 ·相關技術之描述 半導體裝置的安裝模式 著型，而表面黏著型係成為 流0 係包含引出線插入型及表 達成高密度之表面黏著的 面黏 主 在表面黏著型的各種方式中 複數之球形栅極的BGA (球柵陣列 板之上的橫剖面。 圖4係顯示其底面具有 封裝已黏著在安裝基 如圖4所示，被載持在bga封裝ιι〇之上的半導體晶片 後戚^由/己線115及引出線113而電連至球形柵極112。s 置在印刷電路板101的表面之上。球形栅法 1^2係豐置在配線端子1〇2之上’並接著加熱而使其融化 精以使球形栅極112固定至配線端子1〇2之上。 士然而，當印刷電路板1 〇 1受到外部作用力之作用而彎 曲日守’ BGΑ封裝11 〇的球形柵極丨丨2從配線端子丨〇 2之上脫落 的問題將從而發生。 而上述情況係起因於BGA封裝1 1 〇之剛性大於印刷電路 板1 0 1之剛性的事實，所以，BGA封裝丨丨〇的變形量將無法 與印刷電路板1 0 1的變形量一致。 【發明的綜合說明】
第5頁
529137 五、發明說明（2) 本發明之一目的在於提供一 一封裴從一印刷電路板之上脫落 係關於一種半導體裝 本發明 封裝，係經由黏著 安裝基板；一半導 配線，用以 種半導體裝置，其能降低 的可能性。 置，包含一安裝基板；一 在該安 體晶片 在該半 該連接球狀 設至一撓性 撓性帶將使 表面藉由介 帶之具有該 線與該連接 配線而互相 將設置 部；其中，該 帶的同一表面 該撓性帶之具 置於其間的一 連接球 球狀部 電連。 狀部裝 兩者則 裝基板 ，係被 導體晶 半導體 ，而折 有該半 缓衝材 設至其 藉由形 的連接球狀部 載持在該封裝 片之上的連接 晶片與該連接 彎呈180 °之-導體晶片裝設 料而實質上平 上的'一表面， 成在該撓性帶 而電連至該 上；及接合 端子電連至 球狀部係裝 -形狀的該 至其上的一 行於該撓性 及該接合配 之中的連接 【較佳實施例 以下參見 苐一實施例。 子之半導體封 顯示第一實施 分別製備 具有焊接球狀 11、裝設至撓 體晶片1 4與電 片1 4與配線1 5 之詳細說明】 圖1 A及圖1 B，俾讀日η 士 η 兄月本發明之半導體裝置 圖1A及圖1 B係顯示切齡” + ^ ^ , 157斷焊接球狀部及配線 裝及印刷電路板的甚立丨 ^ '剖面圖。圖1A及圖1B 例的製造步驟。 具有配線端子2設置右龙| 都1 9 XX兩a 1 在其上的印刷電路板1 口P 1 2及電路板配線1 3形 ^ 形成在其上的撓性帶 性帶1 1之上的半導體曰μ，λ ^ L 聪日日片U、用以連接半 路板配線13的配線15、爲m .干 沾戸β、及用以密封半導體 的％氧树月日1 6。此時 作 τ 蛘接球狀部12、電
529137 五、發明說明（3) 板配線1 3、配線1 5、及氣樹脂1 6皆設置在挽性帶11、 一表面上。撓性帶11係區隔成半導體晶片14的區域、$同 球狀部1 2的區域、及彎曲區域1 7，而其上未形成有構焊接 彎曲區域1 7係設置用以供撓性帶1丨之半導體晶片J 4 2的 朝向圖中箭號所示之方向彎曲。 '區域 在將形成於撓性帶11之上的焊接球狀部;[2黏著至訊 於印刷電路板1之上的配線端子2之後，係藉由當作繳二^ 的彎曲區域1 7而使撓性帶1丨朝向圖中箭號所示之方:=軸 曲，俾能獲得圖示之橫剖面。 $ 在進行撓性帶11的彎曲操作之前，當作緩衝材 氧樹脂18係黏著至撓性帶丨丨之具有焊接球狀部12設置在^ 上的表面之反面之上（如圖1A)。 ’、 使撓性帶11進一步地朝向\箭號所示之方向.彎曲時， ，生帶"，具有半導體晶片"設置在其上的表面之反二 者至石夕氧樹脂1 8。（如圖1 b )。 ’、 ，性帶之承載半導體晶片14的區域與撓性㈤ & ^ . 、，a 士认 &域係藉由矽氧樹脂1 8而互相 1的"：非直接地黏著在一 & ’藉以減小由於印刷電路板 1的彎曲變形所造成之半導體a 丨冲」电峪板 線損壞及晶片脫落等故障曰曰片的變形置，進而降低配 施例以二參/；圖-2，俾說明本發明之半導體裝置的第二實 剖面圖：糸』不本發明之半導體裝置的第二實施例之橫 類似於第一實施例’焊接球狀部12、電路板配線13、
$ 7頁 529137 五、發明說明（4) 配線15、及環氧樹脂16皆形成在撓性帶的相同表面之上， ^撓性帶11亦藉由彎曲區肪而區隔成半導體晶片14的區 域與焊接球狀部1 2的區域。 在將形成於撓性帶u之上的焊接球狀部12黏著至設置 ，:刷電路板〗之上的配線端子2之後，係將撓性帶u彎曲 ，半=體晶所在之撓性帶n的區域與焊接球狀部⑴斤 ίίί:帶11的區域並不在同一平面上呈對齊的狀態，且 考曲區域17亦保持直線狀態。詳言之 =性帶區域係黏著一補強用之樹脂或金屬（舉例而 ° 、’5 ，如圖不之補強材料21，因而形成一直線外形。 此時，為了使焊接球狀部12與配線端子2穩固地互相 將穿透撓性帶11、#____々 = 接球狀部12設置在其上的撓性帶11之區域的 周邊固疋至印刷電路板1。 彎曲】’7 f 5帶11係藉由具有直線外形並介置於其間的 丐曲&域17而區隔成半導體晶片區域 且所有之構件則構成一半導體單元1〇。坪接…£域， 具有與半導體單元10之構造相同的另一半 則形成在鄰接於半導體單元i。之處。圖示4 係使其焊接球狀部所在之撓性帶的 之下的狀態而配置在印刷電路板i之上。在牛¥體早心 於設ϋ煤：H電路板被半導體單元所佔用的區域係僅限 地將半ίϊϊ=ί if性帶的區域，因此具有可高密度 V ®早70黏者至印刷電路板的優點。 Η 第8頁 529137 五、發明說明（5) 如圖3所示之第二實施例的一變化例，電路板配線 13、配線15、及環氧樹脂16係形成在撓性帶丨丨之具有 球狀部1 2形成在其上之表面的反面之上。 如上所述，在第一實施例中，半導體晶片盥 部係分別設置在^生帶之上的μ區域上，且換性帶之^ 導體晶片區域與焊接球狀部區域係互相疊置在同一平 上，故由於印刷電路板之變形而對 ί所產生的負面影響將可藉由介置於撓= : = 以減小。 間且作為綾衝材料的矽氧樹脂而加 而在挽性帶之半導轉曰y 疊置在同一平面上的另體:片£域與焊接球狀部區域並非 之上的複數之半導體單元价田各形成在一撓性帶 —半導體單元之撓性帶印刷電路板之上時，其 導體單元之撓性帶的焊體區域係設置在相鄰之半 地將半導體單元整合= = t方，藉以高密度 很明顯地，以上所沖土 之較佳實施例，而並非：：恭僅為了用於方便說明本發明 例。凡依本發明所做的任^狹義地限制於該較佳實施 範圍。 何變更，皆屬本發明申請專利之
第9頁 529137 圖式簡單說明 圖1 A及圖1 B係依據本發明之半導體裝置的第一實施例 之製造步驟順序而而顯示其橫剖面的橫剖面圖。 圖2顯示本發明之半導體裝置的第二實施例之橫剖面 圖。 圖3顯示本發明之半導體裝置的第二實施例之變化例 的橫剖面圖。 圖4顯示習知半導體裝置的橫剖面圖。 【符號說明】
1、 1 0 1〜印刷電路板 10、20〜半導體單元 11〜撓性帶 1 2〜焊接球狀部 1 3〜電路板配線 1 4、11 4〜半導體晶片 1 5、11 5〜配線 1 6、11 6〜環氧樹脂 17〜彎曲區域
1 8〜秒氧樹脂 1 9〜螺栓 2、 1 0 2〜配線端子 2 1〜補強材料 110〜BGA封裝 11 2〜球形桃極
第10頁 529137 圖式簡單說明 11 3〜引出、線
IIHI

Claims (1)

  1. 529137 六、申請專利範圍 1. 一種半導 一安裝 一封裝 體裝置， 基板； ’係經由 連至該安裝基板； 半導 體晶片， 線，用以 連接球狀 該半導體 帶的同一表面，而折 具有該半 接合配 子電連至該 其中， 該撓性帶之 置於其間的 連接球狀部 球狀部兩者 電連。 一缓衝材 裝設至其 則藉由形 包含： 黏著在該安裝基板的連接球狀部而電 係被載持在該封裝上；及 將u又置在該半導體晶片之上的連接 部； 晶片與該連接球狀部係裝設至一撓性 彎呈1 8 0。之一形狀的該撓性帶將使 導體晶片裝設至其上的一表面藉由介 料而實質上平行於該撓性帶之具有該 上的一表面，及該接合配線與該連接 成在該撓性帶之中的連接配線而互相 如申請專利範圍第i項之半導體 為—矽氧樹脂。 ，、干及綾衝材枓 3.—種半導體裝置，包含： 一安裝基板； 連至：基：經由黏著在該安裝基板的連接球狀部而電 一半導體晶片，係被載持在該封裝上·及 接合配線，用以將設置在該半導體晶片之上的連接端
    第12頁 529137 六、申請專利範圍 子電連至該連接球狀部； 其中，將該撓性帶折彎呈該撓 區域與該撓性帶之具有連接球狀部 二有該封裝的— 該安裝基板的一表面而隔開地彼此相二區，，者係相對於 相平行的一狀態，及該接合配線與該 f貫質上彼此互 由形成在該撓性帶之中的連接配線而互相部兩者則藉 2申請專利範圍第3項之半導體裝置 片與該連接球狀部係裝設至該撓性帶的同、一中表該面半之導上體晶 5.如申請專利範圍第3項之半導體裝 並 片與該連接球狀部係裝設至該撓性帶的不同表該面丰之導上體晶 6·如申請專利範圍第3項之半導體 J、該連接球狀部、及該撓性帶的複數之、中各具有該封 虞至該安裝基板之上，及該複數之半導體嚴體早凡係安 封裝係位在該複數之半導體單元之的n-的該 部之上方。 W的另一的連接球狀 7·如申睛專利範圍第3項之半導體裝，1 ▼之具有該封裝的該g域與該撓& 旦有立該撓性 間的該撓性帶的-區域=設=== …金屬’俾能使其間的該區域具有一直線树 II 第13頁
TW091105391A 2001-03-23 2002-03-20 Semiconductor device TW529137B (en)

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EP1953819A4 (en) * 2005-11-15 2010-09-29 Nec Corp SEMICONDUCTOR ASSEMBLY, ELECTRONIC ELEMENTS, AND ELECTRONIC DEVICE
JP4561729B2 (ja) 2006-11-06 2010-10-13 エプソンイメージングデバイス株式会社 電気光学装置及び電子機器
JP5028968B2 (ja) * 2006-11-17 2012-09-19 日立電線株式会社 半導体装置、積層型半導体装置およびインターポーザ基板
US7833456B2 (en) * 2007-02-23 2010-11-16 Micron Technology, Inc. Systems and methods for compressing an encapsulant adjacent a semiconductor workpiece
JP2010212273A (ja) * 2009-03-06 2010-09-24 Elpida Memory Inc 半導体パッケージ用基板、該基板を用いた半導体パッケージ、および半導体パッケージ用基板の製造方法
US10090259B2 (en) * 2015-12-26 2018-10-02 Intel Corporation Non-rectangular electronic device components

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