TW528658B - Beveling wheel for processing silicon wafer outer periphery - Google Patents

Beveling wheel for processing silicon wafer outer periphery Download PDF

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Publication number
TW528658B
TW528658B TW090133374A TW90133374A TW528658B TW 528658 B TW528658 B TW 528658B TW 090133374 A TW090133374 A TW 090133374A TW 90133374 A TW90133374 A TW 90133374A TW 528658 B TW528658 B TW 528658B
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Taiwan
Prior art keywords
metal
outer periphery
processing
wafer
bonding agent
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TW090133374A
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Chinese (zh)
Inventor
Kenichiro Kumamoto
Kiwa Mikuni
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Noritake Super Abrasive Kk
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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B9/00Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor
    • B24B9/02Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground
    • B24B9/06Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground of non-metallic inorganic material, e.g. stone, ceramics, porcelain
    • B24B9/065Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground of non-metallic inorganic material, e.g. stone, ceramics, porcelain of thin, brittle parts, e.g. semiconductors, wafers
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B53/00Devices or means for dressing or conditioning abrasive surfaces
    • B24B53/06Devices or means for dressing or conditioning abrasive surfaces of profiled abrasive wheels

Abstract

The object of this invention is to the substance of the metal pollution of the beveling wheel in the beveling processing of a silicon wafer and exclude the causes of the pollution in order to obtain a high quality beveling processing of the wafer. The aforementioned object is achieved by elucidating that in the metal components contained in the metal bonding agent of the beveling wheel, copper, nickel and zinc are liable to diffuse to the wafer in order to accomplish this invention. That is, a beveling wheel 10 has a grinding particle layer 2 formed with one or more grooves 3 and adhered to the outer periphery of a metal core 1. The bonding material of the grinding particle layer 2 is a metal bonding agent. The metal powder in the bonding agent is composed of a metal powder that contains neither of the copper, nickel and zinc.

Description

528658 、發明説明 [發明所屬之技術領域] 輪。本發明係有關於一種用以加工矽晶圓之外周部之斜齒 [習知背景] 矽晶圓(以下簡稱晶圓)之加工程序,係一種基本之程 序丄該程序係外周刀或杯形磨輪等,將⑪晶錠形成= 預疋之尺寸之圓柱狀晶錠,並利用内周謂該圓柱狀晶鍵 切割成預定之厚度而作成晶圓’再利用斜#輪使該晶圓之 外周部面進行則研磨,錢對晶圓面進行研磨、姓刻、 抛光加工’而完成積體電路之基板者。 上述加工程序中,利用斜齒輪對該晶圓之外周部面進 行倒角研磨之加工,係使用如第2圖或第3圖所示之斜齒 輪’如第4圖所示般進行研磨加工者。 第2(a)圖係顯示斜齒輪之外觀之一例之立體圖,第2(七) 圖係外周部之部分放大圖。齒輪1〇〇係於金屬盤心ι〇ι之 外周部固著有形成1條或複數條溝之磨粒層1〇2(第2(b)圖 係顯示複數條溝之例),金屬盤心1〇1係鐵製或鋁製之圓盤 狀金屬盤心,而磨粒層102係由鑽石磨粒與金屬結合劑所 構成。 第3圖係一顯示斜齒輪磨粒層之溝形狀之例子之圖。 第3(a)圖係顯示形成1條溝1〇3a之例子,第3(b)圖係顯示 分別形成複數條粗加工用之溝103b與精加工用之溝1〇3〇 之例子’第3(c)圖係顯示形成複數條相同之溝i〇3d之例 子0 (請先閲讀背面之注意事項再填窝本頁} 、一-T— -4- 528658528658, invention description [Technical field to which the invention belongs] wheel. The present invention relates to a processing procedure for processing helical teeth on the outer periphery of a silicon wafer. [Knowledge background] Silicon wafer (hereinafter referred to as a wafer) is a basic procedure. The procedure is a peripheral knife or cup shape. Grinding wheels, etc., form a crystal ingot with a size equal to the pre-diameter, and use the inner periphery to cut the cylindrical crystal bond to a predetermined thickness to form a wafer. Then use the oblique # wheel to make the outer periphery of the wafer. The surface is polished, and the wafer is ground, carved, and polished to complete the substrate of the integrated circuit. In the above processing procedure, the bevel gear is used to perform chamfer polishing on the outer peripheral surface of the wafer, and the helical gear shown in FIG. 2 or 3 is used to perform the grinding processing as shown in FIG. 4. . Fig. 2 (a) is a perspective view showing an example of the appearance of a helical gear, and Fig. 2 (7) is an enlarged view of a part of an outer peripheral portion. The gear 100 is fixed on the outer periphery of the metal disk core with an abrasive grain layer 102 forming one or a plurality of grooves (the figure 2 (b) shows an example of a plurality of grooves). The metal plate The core 101 is a disc-shaped metal disc core made of iron or aluminum, and the abrasive grain layer 102 is composed of diamond abrasive grains and a metal bonding agent. Fig. 3 is a view showing an example of a groove shape of a helical gear abrasive particle layer. Figure 3 (a) shows an example of forming one groove 103a, and Figure 3 (b) shows an example of forming a plurality of grooves 103b for roughing and grooves 1030 for finishing. Figure 3 (c) shows an example of the formation of a plurality of identical grooves i03d. 0 (Please read the precautions on the back before filling in this page} 、 一 -T— -4- 528658

發明說明 第4⑷圖係顯示晶圓外周部之研磨加工方法 :之弟4(b)圖係顯示加卫後之晶圓之外周部形狀之圖。晶 喜加工程序中,於晶圓被截斷之狀態下,外周部端面之 缺:部呈尖銳狀,故於各加工程序中之處理作業時易產生 二^由於具有該缺口之晶片會使晶圓面污損且或產生 知傷或龜料,導致半導體裝置之產量降低。因此,可實 去晶圓之外周部端面之邊緣部之斜削加工。該斜 削加工係,如帛4(a)圖所示,藉真空吸# 3〇〇固持晶圓 200’並使晶圓200與齒輪1〇〇旋轉,以將外周部研磨加工 成如第4(b)圖所示之形狀。 [發明所欲解決之課題] 如上述晶圓外周部加工用之斜齒輪中,形成磨粒層之 結合材料係使用金屬結合劑,而該金屬結合劑係由銅、錫、 鎳、鋅、鐵、姑、鐘、銀等之金屬粉末與其他之添加物所 構成者。將該等金屬粉末與添加物及磨粒之混合物充填於 模具等後,藉由以700〜900°C燒結,使磨粒層固著於金屬 盤心。 另一方面,於半導體之領域中,隨著積體電路之高積 體化、小型化與高速化之進展,對於成為材料之晶圓之要 求亦更加嚴格,而加工表面之微細化、鏡面化亦正在進展 中。如此情況下,於晶圓製造程序中之重要問題為關於晶 圓之金屬污染之問題。 近年來,對於晶圓之要求項目趨於嚴密且嚴格,關於 金屬污染’重金屬之污染係定為l〇9atoms/cm2以下。於晶 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公釐) (請先閲讀背面之注意事項再填寫本頁)Description of the Invention Figure 4 (a) shows the grinding process of the outer periphery of the wafer: Brother 4 (b) is a diagram showing the shape of the outer periphery of the wafer after guarding. In the Jingxi processing program, in the state where the wafer is truncated, the lack of the end surface of the peripheral portion: the portion is sharp, so it is easy to occur during processing operations in each processing program. Surface contamination may cause scratches or tortoises, which may reduce the yield of semiconductor devices. Therefore, the beveling of the edge portion of the outer peripheral end surface of the wafer can be performed. As shown in Fig. 4 (a), this beveling processing system holds the wafer 200 'by vacuum suction # 300, and rotates the wafer 200 and the gear 100 to grind and process the outer peripheral portion as shown in Fig. 4 (b) The shape shown in the figure. [Problems to be Solved by the Invention] In the helical gear used for processing the outer periphery of the wafer, the bonding material for forming the abrasive grain layer uses a metal bonding agent, and the metal bonding agent is made of copper, tin, nickel, zinc, iron Metal powders such as copper, copper, silver, silver and other additives. After the mixture of these metal powders, additives and abrasive grains is filled in a mold or the like, the abrasive grain layer is fixed to the core of the metal disc by sintering at 700 to 900 ° C. On the other hand, in the field of semiconductors, with the advancement of the integration, miniaturization and high speed of integrated circuits, the requirements for wafers becoming materials have become more stringent, and the processing surface has been miniaturized and mirror-finished. Also in progress. In this case, an important issue in the wafer manufacturing process is the metal contamination of wafers. In recent years, the requirements for wafers have become stricter and stricter. Contamination of metal pollution 'heavy metals is set at 10 atom / cm2 or less. Yu Jing This paper's size applies to Chinese National Standard (CNS) A4 (210X297 mm) (Please read the precautions on the back before filling this page)

五、發明説明( 圓之製造程序中,有金屬污染之虞之程序者被認為係:來 2於石夕晶錠之外周研磨、方位加卫料中之研磨齒輪之金 屬…來自於切割程序中之截斷工具之金屬污染;及來 光加工知序中之拋光機、冶鍊工具類之金屬污染 等,除了該等污染外,發明人追究出尚有來自於晶圓之斜 削加工中之斜齒輪之金屬污染之問題。 本發明所欲解決之課題,係在於㈣來自於晶圓之斜 削加工中之斜齒輪之金屬污染之本質,並排除污染之原 因,而能有高品質之晶圓之斜削加工。 [解決課題之手段] 來自斜齒輪之金屬污染係指斜齒輪之磨粒層中之某 =粉::於斜削加工中,由磨粒層擴散至晶圓而污染晶 者。本《明人針對作為金屬結合劑用之金屬粉末 習知所用之銅、錫、錦、鋅、鐵、鈷、猛、銀等之中, 至晶圓進行研究調查後之結果是確認銅 武"乂易由磨粒層擴散至晶圓。本發明係 广排除以該等容易擴散之金屬粉末:為 屬之材枓’而可實質地避免來自斜齒輪之晶圓之 於金二=:係,晶圓外周部加工用之斜齒輪,係 於金屬一外周部固著有形成“条或複數條 而該磨粒層之結合材料係-金屬結合劑,且a 金屬結合射之金屬粉末係未含有銅、錄 之金屬粉末者。 f T之任一 種 晶 何 金 係 該 者 五、發明説明(4 ) 辞擴散至 曰曰 晶圓之斜削加工中,磨粒層中之鋼、鎳 圓之機構之闡明仍需待今後之研究,而該等金屬容易擴散 至晶圓之理由,吾人認為係該等金屬元素在電子排列上易 與8!共有結合,且由於研磨時之發熱更促進其内部之擴散 所致者。 八 關於銅、鎳、鋅以外之金屬,於本發明人之研究結果 中,吾人認為幾乎不會於斜削加工中向晶圓擴散,因此藉 由使用未含有銅、#、鋅之任一者之金屬粉末作為金屬結 合劑中之金屬粉末,彳防止於晶圓之斜削加工時金屬由磨 粒層擴散至晶圓之現象。 .在此,本發明之斜齒輪之金屬結合劑中之金屬粉末, 係由錫或銀之任一者或兩者’及鈷或鐵之任一者或兩者所 構成者,且形成抗折強度為·〜_¥之金屬結合劑者 為佳。:屬接合劑中之錫粉末或銀粉末,係具有作為使成 形性提高之結合劑之機能,而鈷粉末或鐵粉末,係具有提 高磨粒之維持力之機能。藉由使該等金屬粉末之平i粒徑 為ΙΟμιη以下,較佳者為5μιη以下,可得到磨粒均一分^ 之微細組織。金屬結合劑之抗折強度若小⑨4嶋料,則 會=加研料磨㈣之磨耗,且於早期便產生磨粒層之形 狀朋裂’造成加工精度低抗折強度若超過, 則切削力降低,灼燒被加工物,且會產生碎屑。 又’金屬結合劑中之金屬組成比例,係以錫或銀之任 一者或兩者為5〜40質量%,且鈷或鐵之任一者或 6。〜%質量%為佳。錫或銀之比例若少於5質量% :則= 528658 五、發明説明( 屬結合劑變硬而使切削力降低,若超過4G質量%,則發生 錫或銀之流出,而無法得到正常之組織,且金屬結合劑之 抗折強度將會小於400Mpa。鈷或鐵之比例若少於6〇質量 %,則無法得到適當之磨粒固持力,若超過95質量%,則 於製造程序中之燒結溫度會升高而使磨粒劣化’且金屬結 合劑之抗折強度將會超過800Mpa。 上述之斜齒輪可藉由與習知相同之製造方法來製造, 即,使用模具製造以金屬結合劑作為結合材料之環狀之磨 粒層,並經由接著劑將該環狀之磨粒層固著於金屬盤心, 且藉放電加工於磨粒層形成1條或複數條溝。 [發明之實施形態] 弟1圖係顯示於本發明之實施形態中之斜齒輪之部分 截面圖。斜齒輪10,係具有圓盤狀之金屬盤心i及於該金 屬盤心1之外周部固著附有溝之磨粒層2者。金屬盤心i 係銘製,且外徑約逝mm,外周部之厚度約2。随者。磨 粒層2係由粒度# 800、集中度1G〇之鑽石磨粒及金屬結合 =構成:並藉:電加工形成i條之溝3者。於本實施形 也,糸形成如第i圖所示之形狀之溝3,然而磨粒層 及溝之形狀Μ也可形成包含前述第3圖所示 ^ 種形狀。 1〈合 [試驗例1] 以銘—錫系作為金屬結合劑之金屬組成,改變姑與錫 作成與第1圖所示之斜會輪10之磨粒層2相當之 衣磨粒層,並進行組織觀察及抗折強度試驗。表】顯示 本紙張 1度適"'用中國國家格⑵〇Χ297公釐)V. Description of the invention (In the manufacturing process of the circle, those who are concerned about metal contamination are considered to be: Grinding the metal of the gears in the perimeter and guarding material in the outer periphery of the Shi Xijing ingot ... from the cutting process Metal contamination of cutting tools; and metal contamination of polishing machines and chain smelting tools in the known processing order of light processing. In addition to these contaminations, the inventors have investigated that there are still oblique processes in wafer oblique processing The problem of metal contamination of gears. The problem to be solved by the present invention lies in the essence of metal contamination of helical gears in the beveling process of wafers, and eliminate the causes of contamination, so that high-quality wafers can be obtained. [Means for solving problems] [Metal pollution from helical gears] means that one of the abrasive grain layers of the helical gear = powder :: In the oblique machining, the abrasive grain layer diffuses to the wafer and contaminates the crystal . This "Mingren" used copper, tin, brocade, zinc, iron, cobalt, manganese, silver, etc. used in metal powders used as metal binders. After conducting research and investigation on wafers, the results confirmed copper " 乂 易 由 磨The layer diffuses to the wafer. The invention broadly excludes these easily diffused metal powders: the material that belongs to it, and can substantially avoid the wafer from the helical gear to the gold II =: system, the wafer peripheral processing The helical gear used is fixed on the outer periphery of the metal to form a "strip or a plurality of strips, and the binding material layer of the abrasive grain layer is a metal bonding agent, and the metal powder of a metal bonding shot does not contain copper or metal. The powder is any one of f T, which is the one of the fifth. Invention description (4) The word spreads to the wafer beveling process, and the mechanism of the steel and nickel circle in the abrasive layer still needs to be clarified. In future research, and the reason that these metals easily diffuse to the wafer, I think it is because these metal elements are easily combined with 8! In the electronic arrangement, and due to the heat generated during grinding, the internal diffusion is promoted. Regarding metals other than copper, nickel, and zinc, in the results of the present inventors' research, we believe that it will hardly diffuse to the wafer during the beveling process. Therefore, by using any one that does not contain copper, #, and zinc, Metal powder as metal bond The metal powder in the agent prevents the metal from diffusing from the abrasive grain layer to the wafer during the oblique processing of the wafer. Here, the metal powder in the metal bonding agent of the helical gear of the present invention is made of tin or Either one or both of silver 'and one or both of cobalt or iron, and a metal bond with a flexural strength of ~~ _ ¥ is preferred .: It is a tin powder in the bonding agent Or silver powder has a function as a binder for improving formability, and cobalt powder or iron powder has a function of improving the holding power of abrasive grains. By making the flat particle diameter of these metal powders 10 μm or less , Preferably 5 μιη or less, to obtain a fine structure with uniform abrasive grains. If the flexural strength of the metal binder is less than 4 嶋, it will be equal to the abrasive wear of the abrasive, and abrasive grains will be generated in the early stage. The shape of the layer is 'cracked' and causes low machining accuracy. If the flexural strength is exceeded, the cutting force is reduced, the workpiece is burned, and debris is generated. The metal composition ratio in the metal bonding agent is 5 to 40% by mass of either one or both of tin or silver, and either one of cobalt or iron or six. ~% Mass% is preferred. If the proportion of tin or silver is less than 5% by mass: then = 528658 V. Description of the invention (It is a binding agent that hardens and reduces the cutting force. If it exceeds 4G% by mass, outflow of tin or silver will occur, and normal results cannot be obtained. Structure, and the flexural strength of the metal bonding agent will be less than 400Mpa. If the proportion of cobalt or iron is less than 60% by mass, appropriate abrasive grain retention cannot be obtained, and if it exceeds 95% by mass, it will be used in the manufacturing process. The sintering temperature will increase and the abrasive grains will deteriorate, and the flexural strength of the metal bonding agent will exceed 800Mpa. The helical gear described above can be manufactured by the same manufacturing method as known, that is, the metal bonding agent is manufactured using a mold. As a ring-shaped abrasive particle layer as a bonding material, the ring-shaped abrasive particle layer is fixed to the core of the metal plate through an adhesive, and one or more grooves are formed on the abrasive particle layer by electrical discharge processing. Form] Figure 1 is a partial cross-sectional view of a helical gear shown in the embodiment of the present invention. The helical gear 10 has a disc-shaped metal disc core i and is fixedly attached to the outer periphery of the metal disc core 1. Groove's abrasive layer 2. Metal plate i is engraved and has an outer diameter of about mm, and the thickness of the outer periphery is about 2. Follower. The abrasive grain layer 2 is composed of diamond abrasive grains with a grain size of 800 and a concentration of 1G〇 and metal bonding = constitute: and borrow: electricity The grooves 3 are formed by processing. In this embodiment, the grooves 3 having the shape shown in FIG. I are also formed. However, the shape M of the abrasive grain layer and the grooves can also be formed to include the types shown in FIG. 3 above. Shape [1. [Experiment Example 1] Metal composition with Ming-tin system as the metal binder is changed, and the abrasive grain layer corresponding to the abrasive grain layer 2 of the inclined pulley 10 shown in FIG. 1 is changed with tin and the tin is made. And conduct tissue observation and flexural strength test. Table] shows that this paper is 1 degree suitable " 'use Chinese national standard ⑵〇 × 297mm)

(請先閲讀背面之注意事項再填寫本頁) 528658(Please read the notes on the back before filling this page) 528658

金屬組成與試驗結果 Γ志1 ΊMetal composition and test results Γ 志 1 Ί

[試驗例2] (請先閲讀背面之注意事項再填寫本頁) 以鈷-銀系作為金屬結合劑之金屬址成,?文變始盘銀 之比例以作成與試驗例i相同之環狀磨粒層,並進行組織 觀察及抗折強度試驗。表2顯示金屬組成與試驗結果。 【表2】[Experimental Example 2] (Please read the precautions on the reverse side before filling out this page.) Cobalt-silver-based metal binders are used. The ratio of silver at the beginning of the Cultural Revolution was changed to the same annular abrasive grain layer as in Test Example i, and the structure observation and flexural strength test were performed. Table 2 shows the metal composition and test results. 【Table 2】

Co% 1 A A Ag% 抗折強度Mpa 燒結溫度。c 組織觀察 100 0 1200 1000 磨粒劣化 95 rv r\ 5 870 950 -- 90 r\ 10 800 900 正常 70 30 680 820 正常 60 40 600 750 if - 50 50 520 700 有流出 燒結溫度會變高而使磨粒劣化,且金屬結合劑之抗折強度 將超過800Mpa,又,若錫或銀之比例超過4〇質量%,則 發生錫或銀之流出而無法得到正常之組織。 [試驗例3] 使用於试驗例1及試驗例2中所作成之磨粒層中之一 部分之磨粒層作成斜齒輪,並進行晶圓之端面加工試驗。 發明品1〜3之金屬結合劑之金屬組成係在本發明之範圍 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公釐) 52^658Co% 1 A A Ag% Flexural strength Mpa Sintering temperature. c Microstructure observation 100 0 1200 1000 Abrasive particles degradation 95 rv r \ 5 870 950-90 r \ 10 800 900 Normal 70 30 680 820 Normal 60 40 600 750 if-50 50 520 700 The outflow sintering temperature will increase and cause Abrasive particles deteriorate, and the flexural strength of the metal bonding agent will exceed 800 MPa, and if the proportion of tin or silver exceeds 40% by mass, outflow of tin or silver will occur and normal structure cannot be obtained. [Test Example 3] A part of the abrasive grain layer prepared in Test Examples 1 and 2 was used as a helical gear, and a wafer end surface processing test was performed. The metal composition of the metal binder of the inventions 1 to 3 is within the scope of the present invention. The paper size is applicable to the Chinese National Standard (CNS) A4 specification (210X297 mm) 52 ^ 658

發明説明( 7 外徑125mm、厚度〇.7mm lmin"1 内者,比較品1、2係本發明之範圍外者。習知品之金屬結 合劑之金屬組成係銅_錫系者,金屬組成以外之條件係= 發明品相同。 ' 加工條件 齒輪周速:1800m/min 切口深度:0.5mm 被加工物:矽晶圓 被加工物旋轉速度 研磨液:純水 試驗結果顯示於表3 【表3】 (請先閲讀背面之注意事項再填寫本頁) 金屬組成% 加工片數 加工狀態 發明品1 —90C〇- 10Sn 15000 初期有碎屑~ — 至!區域之壽命 發明品2 70C〇- 30Sn 11000 jgjj安定迅 ~~ 發明品3 飞OCo- 30Ag 12500 安定區域之形狀維 持良好 比較品1 lOOCo 無法安定、卸下___ 比較品2 50C〇— 50Sn 2400 崩裂大____ 習知品 83Cu— 17Sn 11000 初期安定迅速 有銅污染不適合 訂丨 之加工片數,且並無發現金屬污染之產生。比較品1由於 磨粒之劣化,已接近無法使用,比較品2由於磨粒層之組 織不良,形狀崩裂大,且加工片數亦少。習知品於加工過 程中,金屬結合劑中之Cu擴散至晶圓,因而確認造成晶 圓之污染。 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公釐) -10- 五 528658 、發明説明( [發明之效果] 為/曰由二用未含有銅、錄、辞中之任一者之金屬粉末作 合劑之金屬粉末,可實質地僻“门 何計之金屬… 斜齒輪之金屬污染。、免0a®之外周部加工時來自 藉由使金屬結合劑中之金屬粉末以特定之組成比例構 即·由錫或銀之任一者或兩者,及姑或鐵之任一者或 兩者所構成’且該金屬結合劑之抗折強度為彻〜 800Mpa ’可得到正常之磨粒層組織,同時,加工時不會產 生磨粒層之形狀崩裂’ χ ’不會灼燒被加工物,亦不會產 生碎屑,可得到良好之切削力與加工精度。 [圖式之簡單說明] 第1圖係顯示本發明之實施形態中之斜齒輪之部分截 面圖。 第2(a) —(b)圖係顯示斜齒輪之全體形狀例之圖。 第3(a) —(c)圖係顯示斜齒輪磨粒層之溝之形態之例子 之圖。 第4(a) (b)圖係顯示藉斜齒輪之研磨加工之例子之 圖。 [元件標號對照] 1…金屬盤心 2.··磨粒層 3···溝 10…斜齒輪 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公釐)Description of the invention (7 Outer diameter 125mm, thickness 0.7mm lmin " 1, comparative products 1, 2 are outside the scope of the present invention. The metal composition of the conventional metal binder is copper_tin, and other than the metal composition The conditions are the same as those of the invention. 'Processing conditions Gear peripheral speed: 1800m / min Cut depth: 0.5mm Processed object: Silicon wafer processed object Rotation speed Polishing liquid: Pure water test results are shown in Table 3 [Table 3] ( Please read the notes on the back before filling in this page) Metal composition% Processed pieces Process status Invention 1 —90C〇-10Sn 15000 Initial debris ~ — to! Lifetime invention 2 of the area 2 70C〇-30Sn 11000 jgjj stability Xun ~~ Invented product 3 Flying OCo-30Ag 12500 The shape of the stable area is well maintained. Comparative product 1 lOOCo cannot be stabilized and removed ___ Comparative product 2 50C〇—50Sn 2400 Cracked greatly ____ Known product 83Cu— 17Sn 11000 Copper is stabilized quickly in the initial stage Pollution is not suitable for the number of processed pieces, and no metal pollution was found. Comparative product 1 is close to unusable due to the deterioration of the abrasive grains, and comparative product 2 has a poor structure of the abrasive grain layer. , The shape is large, and the number of processed pieces is also small. During the processing of conventional products, Cu in the metal bonding agent diffused to the wafer, so it was confirmed that the wafer was contaminated. This paper size applies the Chinese National Standard (CNS) A4 specification ( 210X297 mm) -10- 5 528 658, Description of the invention ([Effect of the invention] is a metal powder composed of a mixture of metal powders which do not contain any one of copper, copper, and diction. What is the metal ... The metal pollution of helical gears. Free from the outer periphery of 0a®. By making the metal powder in the metal binder in a specific composition ratio, it is made of either one of tin or silver, or both. It is composed of either or both iron and iron, and the flexural strength of the metal bonding agent is through to 800Mpa. A normal abrasive grain layer structure can be obtained, and at the same time, no abrasive grain layer is produced during processing. The shape cracking “χ” does not burn the workpiece and does not generate chips, and can obtain good cutting force and processing accuracy. [Simplified description of the figure] Figure 1 shows the obliqueness in the embodiment of the present invention. Partial cross-sectional view of the gear. Figures 2 (a)-(b) are diagrams showing examples of the overall shape of the helical gear. Figures 3 (a)-(c) are diagrams showing examples of the shape of the grooves of the abrasive layer of the helical gear. Section 4 (a) ) (b) The figure shows an example of the grinding process by helical gears. [Comparison of component numbers] 1 ... Metal plate core 2 .... Grit layer 3 ... Groove 10 ... Helical gears Standard (CNS) A4 specification (210X297 mm)

----- (請先閲讀背面之注意事項再填寫本頁) •訂丨 528658 A7 B7 五、發明説明(9 ) 100.. .齒輪 101.. .金屬盤心 (請先閲讀背面之注意事項再填寫本頁) 102…磨粒層 103a , 103b , 103c , 103d·"溝 200…晶圓 300···真空吸盤 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公爱) -12------ (Please read the precautions on the back before filling this page) • Order 丨 528658 A7 B7 V. Description of the invention (9) 100... Gear 101... Please fill in this page again) 102… Grit layer 103a, 103b, 103c, 103d · " Groove 200 ... Wafer 300 ... Vacuum chuck This paper size applies Chinese National Standard (CNS) A4 specification (210X297 public love)- 12-

Claims (1)

528658 A8 B8 C8 D8 、申請專利範園 夕B曰圓外周部加工用之斜齒輪,其係於金屬盤心 之外周部固著有形成1條或複數條溝之磨粒層,該磨 粒層之結合材料係一金屬結合劑,該金屬結合劑中之 金屬粉末係未含有銅、錄、辞中之任一者之金屬粉末 者。 如申η月專利範圍第i項之石夕晶圓外周部加工用之斜齒 輪,前述金屬結合劑中之金屬粉末,係由錫或銀之任 者或兩者,及鈷或鐵之任一者或兩者所構成者,該 金屬結合劑之抗折強度為400〜SOOMPa。 3 ·如申明專利範圍第2項之矽晶圓外周部加工用之斜齒 輪則述金屬結合劑中之金屬組成比例係錫或銀之任 一者或兩者為5〜40質量%,且鈷或鐵之任一者或兩者 為60〜95質量%。 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公釐) (請先閲讀背面之注意事項再填寫本頁)528658 A8 B8 C8 D8, patent application Fan Yuanxi B said the helical gear for processing the outer periphery of the circle, which is fixed on the outer periphery of the metal disc core with an abrasive layer that forms one or more grooves. The abrasive layer The bonding material is a metal bonding agent, and the metal powder in the metal bonding agent is a metal powder that does not contain any one of copper, copper and metal. For example, the helical gear used for the processing of the outer periphery of the Shixi wafer in the patent scope item i, the metal powder in the aforementioned metal binder is either or both tin or silver, and either cobalt or iron Either or both, the flexural strength of the metal binder is 400 ~ SOOMPa. 3. If the helical gear used for processing the outer periphery of the silicon wafer according to item 2 of the patent is stated, the metal composition ratio in the metal bond is 5 or 40% by mass of either or both of tin and silver, and cobalt Either or both of iron is 60 to 95% by mass. This paper size applies to China National Standard (CNS) A4 (210X297 mm) (Please read the precautions on the back before filling this page) -13 --13-
TW090133374A 2001-03-14 2001-12-31 Beveling wheel for processing silicon wafer outer periphery TW528658B (en)

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CN101594957B (en) * 2007-02-02 2012-09-05 赵星行 Cutting tip

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JP2005177889A (en) * 2003-12-17 2005-07-07 Kurenooton Kk Method of manufacturing metal bonded wheel, and die used for the same
JP4518254B2 (en) * 2004-10-29 2010-08-04 株式会社ジェイテクト A grindstone that prevents the side-associated air layer from entering the outer peripheral grinding surface
BRPI0708274A2 (en) * 2006-02-24 2011-05-24 Ehwa Diamond Ind Co Ltd cutting edge, method for cutting the cutting edge and cutting tool
JP5622077B2 (en) * 2010-03-12 2014-11-12 日立金属株式会社 Semiconductor substrate processing apparatus and semiconductor substrate manufacturing method
WO2013027243A1 (en) 2011-08-24 2013-02-28 新日鉄マテリアルズ株式会社 Beveling grindstone

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101594957B (en) * 2007-02-02 2012-09-05 赵星行 Cutting tip

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