TW518916B - An contact element in an interconnect assemblies and a method for forming the same - Google Patents

An contact element in an interconnect assemblies and a method for forming the same Download PDF

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Publication number
TW518916B
TW518916B TW089115236A TW89115236A TW518916B TW 518916 B TW518916 B TW 518916B TW 089115236 A TW089115236 A TW 089115236A TW 89115236 A TW89115236 A TW 89115236A TW 518916 B TW518916 B TW 518916B
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Taiwan
Prior art keywords
contact element
patent application
item
substrate
beam portion
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TW089115236A
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Chinese (zh)
Inventor
Benjamin N Eldridge
Gaetan Mathieu
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Formfactor Inc
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Priority claimed from US09/364,788 external-priority patent/US7435108B1/en
Application filed by Formfactor Inc filed Critical Formfactor Inc
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Publication of TW518916B publication Critical patent/TW518916B/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
    • H01L23/4822—Beam leads
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01005—Boron [B]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/40—Forming printed elements for providing electric connections to or between printed circuits
    • H05K3/4092—Integral conductive tabs, i.e. conductive parts partly detached from the substrate

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Measuring Leads Or Probes (AREA)
  • Coupling Device And Connection With Printed Circuit (AREA)
  • Wire Bonding (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

An interconnect assembly and methods for making and using the assembly. An exemplary embodiment of an aspect of the invention includes a contact element which includes a base portion adapted to be adhered to a substrate and a beam portion connected to and extending from the base portion. The beam portion is designed to have a geometry which substantially optimizes stress across the beam portion when deflected (e.g. it is triangular in shape) and is adapted to be freestanding. An exemplary embodiment of another aspect of the invention involves a method for forming a contact element. This method includes forming a base portion to adhere to a substrate of an electrical assembly and forming a beam portion connected to the base portion. The beam portion extends from the base portion and is designed to have a geometry which substantially evenly distributes stress across the beam portion when deflected and is adapted to be freestanding. It will be appreciated that in certain embodiments of the invention, a plurality of contact elements are used together to create an interconnect assembly. Interconnect assemblies having resilient contact elements and methods for making these assemblies. In one aspect, the interconnect assembly includes a substrate and a resilient electrical contact element disposed on the substrate. A first portion of the resilient contact structure is disposed on the substrate and a second portion extends away from the substrate and is capable of moving from a first position to a second position under the application of a force. A stop structure is disposed on the surface of the substrate and on a surface of the first portion of the resilient contact structure. According to another aspect of the present invention, a beam portion of the resilient contact structure has a substantially triangular shape.

Description

18916 A7 B7 經濟部智慧財產局員工消費合作社印製 五、發明說明（1 ) 1明領域 本發明係關於互連總成及製造及使用互連體之方法以及 製造此等互連總成之方法。 曼明背景 先前技術有無數互連總成及此等總成之製法及用法。用 於半導體積體電路做成電氣互連之互連總成必須支持互連 元件間的緊密間隔，偶爾稱做互連元件的節距。某些互連 、、悤成係經由積體電路的測試及使用壽命發揮其功能。先前 技術之一類型互連總成使用彈性接觸元件例如彈簧而對半 導體積體電路上的接觸襯墊形成暫時性或永久性連結。此 種彈性接觸元件述於美國專利5,476,211，也述於同在審查 中之美國專利申請案名稱「光刻術界定爲電子接觸結 構」，申請案號09/032,473，申請曰1998年2月2 6日；以 及同在審查中之美國專利申請案名稱「互連總成及方法」 案號09/114,586，申請曰1998年7月13曰。此等互連總成 使用彈性接觸元件，該彈性接觸元件可由第一位置彈性彎 折至第一位置’於該位置彈性接觸元件施力於另一接觸終 端。作用力傾向於確保良好電接觸，如此彈性接觸元件可 提供良好電接觸。 彈性接觸元件典型爲細長金屬結構，一具體實施例中係 根據美國專利5,476,2U所述方法製成。另一具體實施例 中’係以光刻術製造（例如前述專利申請案名稱「光刻術 界定爲電子接觸結構」所述方式製造）。圖1 A舉例説明使 用美國專利5,476,211所述技術形成之彈性接觸元件之_ -4 - (請先閱讀背面之注意事項再填寫本頁) •K------------- --訂---- 丨 本纸張尺度適用中國國家標準（CNS)A4規格（21〇 χ 297公釐） >18916 A718916 A7 B7 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 5. Description of the Invention (1) 1 Field of the Invention The present invention relates to interconnect assemblies and methods of manufacturing and using interconnects, and methods of manufacturing such interconnect assemblies. . Manmin background There are numerous interconnected assemblies in the prior art and the methods and uses of these assemblies. Interconnect assemblies used for semiconductor interconnects to make electrical interconnections must support close spacing between interconnected components, occasionally referred to as the pitch of interconnected components. Some interconnects and systems are able to perform their functions through integrated circuit testing and service life. One type of prior art interconnect assembly uses a resilient contact element such as a spring to form a temporary or permanent connection to a contact pad on a semiconductor volume circuit. Such an elastic contact element is described in U.S. Patent No. 5,476,211, and also in the co-examined U.S. patent application titled "Photolithography Defined as Electronic Contact Structure", Application No. 09 / 032,473, and February 26, 1998. And the US patent application under review, "Interconnect Assembly and Method", case number 09 / 114,586, filed July 13, 1998. These interconnection assemblies use elastic contact elements which can be elastically bent from a first position to a first position 'at which the elastic contact element exerts a force on another contact terminal. The force tends to ensure good electrical contact, so the elastic contact element provides good electrical contact. The elastic contact element is typically an elongated metal structure. In one embodiment, it is made according to the method described in U.S. Patent 5,476,2U. In another specific embodiment, it is manufactured by photolithography (for example, the method described in the aforementioned patent application entitled "Photolithography is defined as an electronic contact structure"). Figure 1 A illustrates an example of an elastic contact element formed using the technology described in US Patent 5,476,211.-(Please read the precautions on the back before filling this page) • K ------------- --Order ---- 丨 This paper size applies to China National Standard (CNS) A4 (21〇χ 297 mm) > 18916 A7

經濟部智慧財產局員工消費合作社印製 五、發明說明（2 ) 例。圖1 B顯示使用光刻術技術形成之彈性接觸元件之一 例，該技術例如述於前述美國專利申請案名稱「光刻術界 定爲電子接觸結構」。一般而言，彈性接觸元件可用於多 種基材例如半導體積體電路，探針卡，插置件及其它電^ 總成。例如，彈性接觸元件底部可安裝於積體電路的接2 終端，或可安裝於插置件基材的接觸終端上或探針卡基材 上或任何其它具有電接觸終端或襯墊的基材上。各彈性接 觸元件的游離端可設置抵靠另一基材上的接觸襯墊而透過 壓力連結形成電接觸，此時具有彈性接觸元件之一基材被 向前壓迫牴住具有接觸元件之另一基材，而該等接^元件 係接觸彈性接觸元件的游離端做出電接觸。 某些情況下須了解可能希望藉例如烊接等操作牢固固定 游離端於對應接觸元件。但許多例中，適合藉二基材間加 壓做出接觸，使彈性接觸元件的接觸端保持游離。 彈性接觸元件可用於做電接觸，原因在於其彈性可維持 加壓獲得良好電接觸，以及原因在於允許垂直方向或2方 向的容差因而全部接觸元件即使高度略有改變仍可做接 觸。但，此種加壓偶爾導致彈性接觸元件的變形或劣化， 原因在於於垂直方向壓縮過度。一種防止此種彈性接觸元 件變形或劣化之辦法係於二基材之一使用一種制止結構。 制止結構可有效界定彈性接觸元件最大偏轉，因而防止各 彈性接觸元件過度彎曲（不當偏轉或由於二基材彼此壓縮 而被破壞。圖1A顯示積體電路之一例，其具有接觸襯墊 103 ’且對各接觸觀塾具有一彈性接觸元件11 〇架設於其 -5- 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） -f-------- I · I I I I---訂--------- (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 ¢18916 五、發明說明（3 ) 上。複數制止結構1〇4及105係設置於積體電路1〇2表面 上。此等制止結構將防止不當的偏轉且可能接合另一基材 而朝向半導體積體電路1〇2表面壓迫。 ^圖1 B顯示於基材例如半導體積體電路12〇上之光刻術界 疋彈性接觸元件之一例。積體電路於其表面上包括一制止 結構15 0。 圖1B之光刻術界定的彈性接觸結構包括一中間層123， 中間層係經由積體電路120基材表面上的鈍化層i2i的開 口而與接線襯墊122做電互連。然後第一金屬層125及第 二金屬層U6形成一樑具有一階n8及一樑部127。本例 中，樑邵實質上係平行基材120表面。隨後梢端結構包括 組件181，182，183，184及185安裝於樑127末端而形成彈 性接觸7G件。有關形成及使用此種光刻術界定的彈性結構 t進一步細節述於同在審查中之美國專利申請案名稱「光 刻術界定的微電子接觸結構」，如前文引述且併述於此以 供參考。雖然此種光刻術界定的彈性接觸元件可提供使用 半導體業界普遍採用的近代光刻術技術形成的優點，但此 種類型彈性接觸元件有某些缺點。例如當如圖1 B所示之 力F向下方向外加於梢端185時，彈性接觸元件底部出現 扭矩作用。扭矩作用係來自於當另一基材上的接觸元件壓 迫朝向梢端185時產生的壓力接觸。此種於底部的扭矩傾 向於對底邵以及順著樑部施加應_力。若樑部127爲矩形， 則導致應力侷限於彈性接觸元件底部旁的樑部。雖然制止 結構150提供略爲確保不會超過某種程度的應力，但由於 -6- 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） — 1 --------^--------- (請先閱讀背面之注意事項再填寫本頁) 518916 A7 經濟部智慧財產局員工消費合作社印製 五、發明說明（4 ) 矩形形狀結果仍有某些應力集中區，當設計彈性接觸元件 時必須考慮此點。典型地，考慮此種應力集中區需要在彈 性接觸元件的某些點增加材料用量。如此又限制將彈性接 觸凡件設計成尺寸縮小的可能。隨著時間的經過，半導體 積體電路上的各種結構大小逐漸縮小時，此點特別不合所 需。 如此’希望提供一種改良的彈性接觸元件。 發明概沭 本發明提供一種互連總成及該總成之製法及用法。本發 明之一特徵方面之具體實施例包括一接觸元件，其包括一 底部自適應於黏著於一基材及一樑部連結至底部且由底部 伸出。樑邵具有樑幾何，該幾何經選擇而可獲得最理想應 力。一具體實施例中，樑部實質上爲三角形且自適應於自 行豎立。 本發明之另一特徵方面之具體實施例涉及一種形成一接 觸π件I方法。此種方法包括形成一底部黏著於電氣總成 之基材，以及形成一樑部連結至該底部。樑部具有一樑幾 何I選擇而可獲得最理想應力。樑部係由底部伸出且於一 八to只施例中實質上爲三角形且自適應於自行豎立。 —、發月之另例中，彈性電接觸元件包括一底部其係附 著於基材，及一樑部係連結於底部且由底部伸出。樑部 自通應於自行豎立且具有樑幾何咢選擇而可產生實質上最 〜化的應力參數對彈性接觸元件的樑部提供預定尺寸约 束以及所需彈力常數（例如彈簧剛性係數）。本例之一具體 1 x 297公釐） I 1* ------------•裝---- (請先閱讀背面之注意事項再填寫本頁) ft -ϋ ϋ n 訂---------. 518916Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 5. Description of Invention (2) Example. Fig. 1B shows an example of an elastic contact element formed using a photolithography technique, which is described, for example, in the aforementioned U.S. patent application titled "Photolithography is defined as an electronic contact structure". Generally speaking, elastic contact elements can be used on a variety of substrates such as semiconductor integrated circuits, probe cards, interposers, and other electrical assemblies. For example, the bottom of the elastic contact element can be mounted on the terminal of the integrated circuit, or it can be mounted on the contact terminal of the interposer substrate or on the probe card substrate or any other substrate with electrical contact terminals or pads. on. The free end of each elastic contact element can be set against the contact pad on another substrate to form an electrical contact through pressure connection. At this time, one substrate with the elastic contact element is pressed forward to hold the other with the contact element. Substrate, and the contact elements are in electrical contact with the free ends of the elastic contact elements. In some cases it should be understood that it may be desirable to securely hold the free end to the corresponding contact element by means of operations such as coupling. However, in many cases, it is suitable to make contact by pressing between the two substrates, so that the contact ends of the elastic contact elements are kept free. The elastic contact element can be used for electrical contact because its elasticity can be maintained under pressure to obtain good electrical contact, and because it allows vertical or two-direction tolerances so that all contact elements can be contacted even if the height is slightly changed. However, such pressurization occasionally causes deformation or deterioration of the elastic contact element due to excessive compression in the vertical direction. One way to prevent deformation or deterioration of such elastic contact elements is to use a stop structure on one of the two substrates. The stop structure can effectively define the maximum deflection of the elastic contact elements, thereby preventing each elastic contact element from being excessively bent (improper deflection or being damaged due to the compression of the two substrates with each other. FIG. 1A shows an example of a integrated circuit having a contact pad 103 ′ and For each contact view, there is an elastic contact element 11 〇 Erected on its -5- This paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) -f -------- I · III I --- Order --------- (Please read the notes on the back before filling out this page) Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economy ¢ 18916 V. The invention description (3). Structures 104 and 105 are provided on the surface of integrated circuit 102. These stop structures will prevent improper deflection and may engage another substrate and press against the surface of semiconductor integrated circuit 102. ^ Figure 1 B An example of an elastic contact element in the photolithography industry shown on a substrate such as a semiconductor integrated circuit 120. The integrated circuit includes a stop structure 150 on its surface. The elastic contact structure defined by photolithography in FIG. 1B includes -An intermediate layer 123 The opening of the passivation layer i2i on the substrate surface of the integrated circuit 120 is electrically interconnected with the wiring pad 122. Then, the first metal layer 125 and the second metal layer U6 form a beam having a first-order n8 and a beam portion 127. In this example, Liang Shao is essentially parallel to the surface of the substrate 120. Then the tip structure includes components 181, 182, 183, 184, and 185 installed at the end of the beam 127 to form an elastic contact 7G piece. Related formation and use of this lithography Further details of the elastic structure t defined by the method are described in the co-examined US patent application titled "Microelectronic Contact Structure Defined by Photolithography", as cited above and incorporated herein by reference. Although such photolithography A defined elastic contact element can provide advantages formed using modern photolithography techniques commonly used in the semiconductor industry, but this type of elastic contact element has certain disadvantages. For example, when the force F shown in FIG. At the tip 185, a torque effect occurs at the bottom of the elastic contact element. The torque effect comes from the pressure contact generated when a contact element on another substrate is pressed toward the tip 185. This kind of torque at the bottom is inclined In order to apply stress to the bottom and along the beam portion. If the beam portion 127 is rectangular, the stress is limited to the beam portion next to the bottom of the elastic contact element. Although the stop structure 150 provides a slight guarantee that it will not exceed a certain level Stress, but due to -6- this paper size applies Chinese National Standard (CNS) A4 specification (210 X 297 mm) — 1 -------- ^ --------- (Please read first Note on the back, please fill out this page again) 518916 A7 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 5. Description of the invention (4) Rectangular shapes still have some stress concentration areas, which must be considered when designing elastic contact elements. Typically, considering such stress concentration areas requires increasing the amount of material at some point of the elastic contact element. This in turn limits the possibility of designing the elastic contact element to be reduced in size. This is especially undesirable when the size of various structures on a semiconductor integrated circuit is gradually reduced over time. As such, it is desirable to provide an improved elastic contact element. Summary of the Invention The present invention provides an interconnection assembly and a method and method for making the assembly. A specific embodiment of a characteristic aspect of the present invention includes a contact element including a bottom adapted to be adhered to a substrate and a beam portion connected to the bottom and protruding from the bottom. Liang Shao has a beam geometry that is selected to obtain the optimal stress. In a specific embodiment, the beam portion is substantially triangular and adaptively erected. A specific embodiment of another characteristic aspect of the present invention relates to a method of forming a contact? Member I. This method includes forming a substrate with a bottom adhered to the electrical assembly, and forming a beam portion connected to the bottom. The beam section has a beam geometry to choose the optimal stress. The beam portion is protruded from the bottom and is substantially triangular in one to eight embodiments and adaptively stands upright. -In another example of Fayue, the elastic electrical contact element includes a bottom portion attached to the base material, and a beam portion connected to the bottom portion and protruding from the bottom portion. The beam section should be self-erecting and should have a beam geometry that can be selected to produce substantially optimized stress parameters. The beam section of the elastic contact element provides a predetermined size constraint and a required spring constant (such as a spring stiffness coefficient). One specific example of this example is 1 x 297 mm) I 1 * ------------ • equipment ---- (Please read the precautions on the back before filling this page) ft -ϋ ϋ n Order ---------. 518916

五、發明說明（5 只施例中，幾何係選擇於實質上具有橫定截面積的懸臂樑 上改進彈性接觸元件性能。性能例如係經由於樑偏轉時應 力只、上均勻分布遍布樑而改進。 需了解本發明之某些具體實施例中，共同使用多個接觸 元件來形成一互連總成。 後文將參照附圖説明多種其它總成及方法。 本發明提供一種互連總成及總成之製法及用法。本發明 之一例中，互連總成包括一基材及一接觸元件設置於基 材。接觸元件之第一部份自適應於自行豎立，且進一步自 適應於當施力至接觸元件之第一部份時由第一位置移動至 第二位置。互連總成進一步包括一制止結構其係設置於接 觸凡件之第二部份。制止結構部份界定接觸元件的第二部 份。本發明之一特定具體實施例中，基材包含一半導體積 體電路。當另一接觸元件與接觸元件做機械之電接觸實施 例。制止結構界定第二位置，該位置界定接觸元件之最大 彎折。 根據本發明之另一例，互連總成係經由一種方法形成， 該方法係設置接觸元件於基材上，此處接觸元件之第一部 份係自行豎立，當施力至接觸元件的第一部份時可由第一 位置移動至第二位置。該方法也括設置一制止結構於接觸 元件之第二部份，此處制止結構界定第二位置。 須了解複數本發明之接觸元件可用於形成一互連總成。 根據本發明之另一特徵方面之方法實例涉及使用一模具 形成可自行豎立的細長彈性接觸元件。此種方法中，模具 -8- 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） (請先閱讀背面之注意事項再填寫本頁) |裝--------訂--- 經濟部智慧財產局員工消費合作社印製 518916V. Description of the invention (In five examples, the geometric system was selected to improve the performance of the elastic contact element on a cantilever beam with a substantially cross-sectional area. For example, the performance was improved by the stress being distributed evenly throughout the beam when the beam was deflected. It should be understood that in some specific embodiments of the present invention, multiple contact elements are commonly used to form an interconnection assembly. A variety of other assemblies and methods will be described below with reference to the drawings. The present invention provides an interconnection assembly and Manufacturing method and usage of the assembly. In one example of the present invention, the interconnection assembly includes a substrate and a contact element disposed on the substrate. The first part of the contact element is adapted to be erected on its own, and is further adapted to the application When the force reaches the first part of the contact element, it moves from the first position to the second position. The interconnection assembly further includes a stop structure which is arranged on the second part of the contact element. The stop structure portion defines the contact element. Part 2. In a specific embodiment of the present invention, the substrate includes a semiconductor integrated circuit. An embodiment in which another contact element makes mechanical electrical contact with the contact element. The structure defines a second position, which defines the maximum bend of the contact element. According to another example of the present invention, the interconnect assembly is formed by a method that places the contact element on a substrate, where the first One part is erected by itself, and can be moved from the first position to the second position when a force is applied to the first part of the contact element. The method also includes setting a stop structure on the second part of the contact element, where the structure is stopped Defining the second position. It should be understood that a plurality of contact elements of the present invention can be used to form an interconnect assembly. An example of a method according to another characteristic aspect of the present invention involves the use of a mold to form an elongated elastic contact element that can stand on its own. This method Medium, mold-8- This paper size is applicable to China National Standard (CNS) A4 specification (210 X 297 mm) (Please read the precautions on the back before filling this page) | Installation -------- Order- -Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 518916

發明說明（6 被解除壓縮成爲可變形材料；模具決定可自行豎立細長彈 性接觸元件之至少一部份的形狀。然後此自行豎立之細長 彈性接觸元件部份形成於可變形材料上。 後文將參照附圖説明多種其它總成及方法。 選-式之簡單説明 本發明將於附圖中之各圖舉例説明但非限制性，附圖中 類似的參考符號表示類似的元件。 圖1 A顯示複數彈性接觸元件設置於一基材上而該基材 上附有制止結構之實例。圖1A爲基材1〇2之透視圖，基材 帶有其彈性接觸元件及制止結構。 圖1 B顯示於帶有制止結構之基材上以光刻術形成的彈 性接觸70件之實例。圖丨B爲彈性接觸元件及制止結構之 剖面圖。 圖2 A爲根據本發明之一具體實施例之彈性接觸元件之 剖面圖。 圖2 B爲本發明之彈性接觸元件之另一具體實施例之剖 面圖’帶有一制止結構設置設置於彈性接觸元件之底部 上。 圖2 C顯示根據本發明之彈性接觸元件之一具體實施例 之另一例之剖面圖，其中一制止結構係設置於彈性接觸元 件底部上。 圖2 D顯示本發明之彈性接觸元件之另一例之剖面圖。 圖2E，2F，2G及2 Η顯示剖面圖，比較圖2 E顯示之最初 比値的彈性接觸元件之偏轉與圖2 G顯示最初彎曲的彈性 -9 - 本紙張尺度適用中國國家標準（CNS)A4規格（210 x 297公釐） (請先閱讀背面之注意事項再填寫本頁) |裝--------訂----- 經濟部智慧財產局員工消費合作社印製 經濟部智慧財產局員工消費合作社印製 518916 A7 — --------B7______ 五、發明說明（7 ) 接觸元件之偏轉。 圖3 A馬根據本發明之彈性接觸元件之一例之頂視圖。 圖3B爲根據本發明之彈性接觸元件之另一例之頂視圖。 圖3 C爲根據本發明之彈性接觸元件之另一例之頂視圖。 圖3 D爲彈性接觸元件陣列設置於基材上之頂視圖。 圖4顯示本發明之互連總成之一例之剖面圖，包括—彈 性接觸兀件具有—制止結構設置於接觸元件底部上，以及 圖4也顯不另一基材調整爲接觸載有制止結構及彈性接觸 元件之該基材。 圖5爲流程圖顯示根據本發明之一具體實施例形成彈性 接觸元件及制止結構之方法實例。 圖6 A顯π根據本發明之一方法於形成彈性接觸元件期 間互連總成之結構之剖面圖。 圖6 B顯示於製造根據本發明之一具體實施例之彈性接 觸元件的製法中於稍後製程階段之另一剖面圖。 圖6C顯示圖6B所示結構6〇8之部份頂視圖。 圖6D顯示圖5所示於若干處理步驟後所得結構之剖面 圖。 圖6E顯示可形成本發明之彈性接觸元件之另一基材之 剖面圖。 圖6F顯示於圖5方法中之某些製程步驟後之剖面圖。 圖6 G颁示於圖5方法之進一步製程步驟後之另一剖面 圖。 一 圖6H顯示圖6G所示結構之部份頂視圖。 -10- 本紙張尺度適用中國國家標準（CNS)A4規格(210 x 297 it M. -------^--------- (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 518916 A7 ----------—~__________ 五、發明說明（8 ) 圖61顯示根據圖5所示方法形成的結構之另一剖面圖。 圖6 J顯示根據圖5所示方法形成的彈性接觸元件之另— 剖面圖。 圖6Κ顯示於根據圖5之方法之進一步製程步驟後之另— 剖面圖。 圖6L顯示圖6Κ所示結構之一具體實施例之頂視圖。 圖7Α顯示帶有多個彈性接觸元件及其對應制止結構之 一具體實施例之剖面圖。 圖7Β顯示根據本發明之一具體實施例—彈性接觸元件 設置於由接觸結構形成的井内部之透視圖。 圖8Α顯示根據本發明之彈性接觸元件之另一具體實施 例之剖面圖。 ' 圖8Β顯示圖8Α之彈性接觸元件於元件組裝之後之透视 圖。 圖9Α，9Β，9C及9D顯示根據本發明於形成彈性接觸 元件之另一方法期間之基材之剖面圖。 詳細説明 本發明係關於互連總成及方法，特別係關於互連總成以 及對積體電路之接觸元件做機械及電連結之方法。後文説 明及附圖係供舉例説明本發明但非視爲囿限本發明。説明 無數特定細節俾徹底了解本發明。但其它例中並未説明眾 所周知的或習知細節俾非不必要柃以細節混淆本發明。 圖2 Α顯示彈性接觸元件之剖面圖，該彈性接觸元件爲 本發明之具體實施例之一例。圖2 A之彈性接觸元件2〇1包 -11 - 本紙^尺度ιϋΤϊι家^5jS)A4規格（210 x 297公釐） Γ Lr---------•壯衣--------訂--------- (請先閱讀背面之注意事項再填寫本頁} 518916 經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明說明（9 括罘一金屬層209及一第-今。 U?n? , ^ 罘—至屬層210其已經相對於基 材202表面以斜角形成。第一 摆梭机π ^ 至屬層209可對其彈性做選 2對彈性接觸元件提供彈性，而第二金屬層21。可對並 導廷性質輯擇俾對彈性㈣元件提供良 材 =典型爲半導體基材，包括—積體電路包含多個終^ =中-終端於圖2Α顯示爲接觸襯㈣7。代表性終端載有 w /輸出仏唬、屯源或接地。接觸襯墊2〇7經由佈線層 2〇6轉合至積體電路的内部電路。佈線層2〇6係設置於絕 、·彖層204内邵，層206及/或2〇4可由被動層2〇5覆蓋於基材 2〇2之頂面上。層2〇3可爲絕緣層或多晶矽層或其它已知 且用於積體電路之層。接觸襯墊斯以電及機械方式搞合 至短路層208，短路層係設置於接觸襯墊2〇7上方。金屬 層209及210係形成於短路層2〇8上方，金屬層2〇9及21〇各 別的底部係高於且電連結於接觸襯墊2〇?。接觸襯墊2〇7 間的導電係經由短路層208及金屬層2〇9發生而最後導電 至金屬層210。須了解圖2 Α之彈性接觸元件2〇1也可用於 其它類型之互連總成’例如探針卡總成或插置件或其它連 結系統’此處彈性接觸元件可提供導電性由基材2〇2之導 體至可自由豎互的彈性接觸元件2〇丨梢端。如圖2 a可見， 此種彈性接觸元件可自由豎立且細長。又，圖2 A所示具 體實施例中，彈性接觸元件相對於基材2〇2表面傾斜。較 佳具體實施例中，此斜面典型相對於基材2〇2表面形成一 斜角。 本發明之一特定具體實施例中，可形成彈性接觸元件 -12- 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐）DESCRIPTION OF THE INVENTION (6) It is decompressed into a deformable material; the mold determines the shape of at least a part of the slender elastic contact element that can be erected by itself. Then the slender elastic contact element that erected by itself is formed on the deformable material. A variety of other assemblies and methods will be described with reference to the drawings. A simple description of the selection-type The present invention will be exemplified but not limited to the drawings in the drawings. Similar reference signs in the drawings indicate similar elements. Figure 1 A shows An example of a plurality of elastic contact elements arranged on a substrate with a stop structure attached to the substrate. Fig. 1A is a perspective view of the substrate 102 with the elastic contact element and the stop structure. Fig. 1 B shows An example of 70 elastic contacts formed by photolithography on a substrate with a stop structure. Figure 丨 B is a cross-sectional view of the elastic contact element and the stop structure. Figure 2 A is the elasticity according to a specific embodiment of the present invention. Sectional view of a contact element. Figure 2B is a cross-sectional view of another embodiment of the elastic contact element of the present invention, with a stop structure disposed on the bottom of the elastic contact element. Fig. 2C shows a cross-sectional view of another example of a specific embodiment of the elastic contact element according to the present invention, wherein a stop structure is provided on the bottom of the elastic contact element. Fig. 2D shows another example of the elastic contact element of the present invention. Figure 2E, 2F, 2G and 2 Η show cross-sections, comparing the deflection of the elastic contact element initially shown in Figure 2E and the elasticity of the initial bend shown in Figure 2G-9-This paper size applies Chinese national standards (CNS) A4 size (210 x 297 mm) (Please read the precautions on the back before filling out this page) | Install -------- Order ----- Printed by the Employees ’Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Industry and Economics 518916 A7 — -------- B7______ V. Description of the invention (7) Deflection of the contact element. Figure 3 A top of an example of an elastic contact element according to the present invention View. Figure 3B is a top view of another example of an elastic contact element according to the present invention. Figure 3C is a top view of another example of an elastic contact element according to the present invention. Figure 3D is an array of elastic contact elements arranged on a substrate Top view.Figure 4 A cross-sectional view showing an example of the interconnection assembly of the present invention, including-the elastic contact element has-a stop structure is disposed on the bottom of the contact element, and Fig. 4 also shows that another substrate is adjusted to contact the stop structure and elasticity. The substrate of the contact element. Fig. 5 is a flow chart showing an example of a method for forming an elastic contact element and a stop structure according to a specific embodiment of the present invention. Fig. 6 A shows that each of the methods according to the present invention during the formation of the elastic contact element Sectional view of the structure of the coupling assembly. Fig. 6B shows another cross-sectional view at a later stage of the process for manufacturing an elastic contact element according to a specific embodiment of the present invention. Fig. 6C shows the structure 6 shown in Fig. 6B. 〇8 Partial top view. Fig. 6D shows a cross-sectional view of the structure shown in Fig. 5 after several processing steps. Fig. 6E shows a cross-sectional view of another substrate which can form the elastic contact element of the present invention. FIG. 6F shows a cross-sectional view after some process steps in the method of FIG. 5. Figure 6G shows another cross-sectional view after the further process steps of the method of Figure 5. -Fig. 6H shows a partial top view of the structure shown in Fig. 6G. -10- This paper size applies to China National Standard (CNS) A4 specifications (210 x 297 it M. ------- ^ --------- (Please read the precautions on the back before filling in this Page) Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 518916 A7 ------------ ~ __________ V. Description of the Invention (8) Figure 61 shows another section of the structure formed by the method shown in Figure 5 Fig. 6J shows another-sectional view of the elastic contact element formed according to the method shown in Fig. 5. Fig. 6K shows another-sectional view after the further process steps according to the method of Fig. 5. Fig. 6L shows the view shown in Fig. 6K A top view of a specific embodiment of the structure. FIG. 7A shows a cross-sectional view of a specific embodiment with a plurality of elastic contact elements and their corresponding restraining structures. FIG. 7B shows a specific embodiment according to the present invention—the arrangement of the elastic contact elements. A perspective view inside the well formed by the contact structure. Fig. 8A shows a cross-sectional view of another embodiment of the elastic contact element according to the present invention. 'Fig. 8B shows a perspective view of the elastic contact element of Fig. 8A after the element is assembled. 9A, 9B, 9C and 9D display according to this Sectional view of the substrate during another method of forming an elastic contact element. DETAILED DESCRIPTION The present invention relates to interconnect assemblies and methods, and more particularly to interconnect assemblies and mechanical and electrical contact elements of integrated circuits. The method of connection. The following description and drawings are provided as examples to illustrate the present invention but are not to be construed as limiting the present invention. Countless specific details are described and the present invention is thoroughly understood. However, other examples do not describe well-known or conventional details. It is not necessary to obscure the present invention with details. Fig. 2A shows a cross-sectional view of the elastic contact element, which is an example of a specific embodiment of the present invention. The elastic contact element 201 of Fig. 2A-11-this paper ^ Size ιϋΤϊι 家 ^ 5jS) A4 size (210 x 297 mm) Γ Lr --------- • Zhuang Yi -------- Order --------- (please first Read the notes on the back and fill out this page} 518916 Printed by the Consumers ’Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 B7 V. Invention Description (9 includes a metal layer 209 and a first-present. U? N ?, ^ 罘 — 到The metal layer 210 has been formed at an oblique angle with respect to the surface of the substrate 202. The first shuttle shuttle π ^ The metal layer 209 can be selected for its elasticity. Two pairs of elastic contact elements can provide elasticity, and the second metal layer 21. Can be selected for the nature of the guide. 俾 Provides a good material for the elastic ㈣ component. Typical = semiconductor substrate, including-integrated body. The circuit contains multiple terminals ^ = medium-terminals are shown as contact pads 7 in Figure 2A. Representative terminals carry w / output pins, sources, or ground. Contact pads 207 are turned to via wiring layer 206 The internal circuit of the integrated circuit. The wiring layer 206 is disposed in the insulating layer 204, and the layer 206 and / or 204 can be covered by the passive layer 205 on the top surface of the substrate 202. Layer 203 may be an insulating layer or a polycrystalline silicon layer or other layers known and used in integrated circuits. The contact pads are electrically and mechanically coupled to the short-circuit layer 208, which is disposed above the contact pad 207. The metal layers 209 and 210 are formed above the short-circuit layer 208, and the respective bottoms of the metal layers 209 and 210 are higher than and electrically connected to the contact pads 20 ?. The conductive system between the contact pads 207 occurs through the short-circuit layer 208 and the metal layer 209, and finally conducts to the metal layer 210. It must be understood that the elastic contact element 201 of FIG. 2A can also be used for other types of interconnection assemblies 'such as probe card assemblies or inserts or other connection systems'. Here the elastic contact element can provide conductivity from the substrate The conductor of 202 is to the tip end of the elastic contact element 20 which can be freely interconnected. As can be seen in Fig. 2a, such an elastic contact element can be erected freely and elongated. In the specific embodiment shown in FIG. 2A, the elastic contact element is inclined with respect to the surface of the substrate 202. In a preferred embodiment, the inclined surface typically forms an inclined angle with respect to the surface of the substrate 202. In a specific embodiment of the present invention, an elastic contact element can be formed. -12- This paper size applies to China National Standard (CNS) A4 (210 X 297 mm)

--------^---- (請先閱讀背面之注意事項再填寫本頁) 華- 經濟部智慧財產局員工消費合作社印製 518916 A7 -—---— _B7____ 五、發明說明（1〇) 201 ’故由底部伸出的樑部具有實質呈三角形形狀。此顯 不於圖3 A所示彈性接觸結構301之頂視圖。換言之，彈性 接觸元件201之樑部215可形成爲實質呈三角形，例如圖 3 A所示彈性接觸元件301之樑部303。彈性接觸元件301 包括一底部302附著於樑部，及一梢端3〇4與另一互連終 ^ /襯塾做電接觸。圖3 B以頂視圖顯示彈性接觸元件3 〇 1A 之另一例，其具有一樑部3〇3A實質呈三角形。樑部3〇3a 係附著於底部302A且包括一梢端304A。 圖2 B顯示本發明之另一具體實施例，其中一制止結構 211係設置於基材202頂面上，也設置於彈性接觸元件212 之部份底部214頂面上。圖2 B所示具體實施例中，基材 202如同圖2 A顯示互連總成之例包括類似的組件2〇3， 204 ’ 205，206，207，208，209 及 210。彈性接觸元件 212 包括二金屬層209及210，其係成形爲二金屬層之底部214 係停靠於短路層208上表面上，而樑部215係相對於基材 202表面以一斜角由底部214末端伸出。彈性接觸元件212 之底4可具有二角形或其它形狀，例如矩形或其它已知用 於彈性接觸元件的形狀。但於一具體實施例中，較佳操 215具有三角形，例如圖3 a之樑303或圖3B之樑303A。制 止結構211形成於彈性接觸元件212之底部214上。制止、社 構211之作用係經由決定彈性接觸元件212受力F朝向基材 202表面壓迫時彈性接觸元件之最大偏轉量，防止彈性接 觸元件的過度彎折（例如不當偏轉）。當另一接觸元件，例 如另一基材上的接觸襯墊被朝向彈性接觸元件212之梢端 -13 - 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公爱） I ,r 裝--------訂--------- (請先閲讀背面之注意事項再填寫本頁) 518916-------- ^ ---- (Please read the notes on the back before filling out this page) Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 518916 A7 ------------- _B7____ V. Invention Explanation (1〇) 201 'Therefore, the beam portion protruding from the bottom has a substantially triangular shape. This is not shown in a top view of the elastic contact structure 301 shown in FIG. 3A. In other words, the beam portion 215 of the elastic contact element 201 may be formed in a substantially triangular shape, such as the beam portion 303 of the elastic contact element 301 shown in FIG. 3A. The elastic contact element 301 includes a bottom portion 302 attached to the beam portion, and a tip end 304 making electrical contact with another interconnect terminal. FIG. 3B shows another example of the elastic contact element 301A in a top view, which has a beam portion 303A that is substantially triangular. The beam portion 303a is attached to the bottom portion 302A and includes a tip 304A. FIG. 2B shows another embodiment of the present invention, in which a stop structure 211 is disposed on the top surface of the substrate 202 and also on the top surface of a portion of the bottom 214 of the elastic contact element 212. In the specific embodiment shown in FIG. 2B, the substrate 202 includes similar components 203, 204 ' 205, 206, 207, 208, 209, and 210 as in the example of the interconnect assembly shown in FIG. 2A. The elastic contact element 212 includes two metal layers 209 and 210, which are formed as the bottom of the two metal layer 214 and rest on the upper surface of the short-circuit layer 208, and the beam portion 215 is formed from the bottom 214 at an oblique angle to the surface of the substrate 202 The end protrudes. The base 4 of the elastic contact element 212 may have a rectangular or other shape, such as a rectangle or other shapes known for elastic contact elements. However, in a specific embodiment, the preferred operation 215 has a triangle, such as the beam 303 in FIG. 3a or the beam 303A in FIG. 3B. A stopping structure 211 is formed on the bottom 214 of the elastic contact member 212. The role of the stopper and the mechanism 211 is to determine the maximum deflection amount of the elastic contact element when the elastic contact element 212 is pressed by the force F toward the surface of the substrate 202 to prevent excessive bending (such as improper deflection) of the elastic contact element. When another contact element, such as a contact pad on another substrate, is directed toward the tip end of the elastic contact element 212-13-This paper size applies to China National Standard (CNS) A4 (210 X 297 public love) I, r Loading -------- Order --------- (Please read the precautions on the back before filling this page) 518916

五、發明說明（μ) 216壓迫時’制止結構2n上表面將接合另一基材的對應 面以防止基材被進一步朝向基材202表面壓迫。換言之， 二基材間之移動受到制止結構211所限，因此制止結構 211將界定其決定二基材間的最小距離，因而決定彈性接 觸元件212的最大彎折。有關制止結構之進一步優點及使 用細節述於同在審查中之美國專利申請案第09/032,473 號，申請曰1998年7月1 3日，名稱「互連總成及方法」； 此專利申請案名稱「互連總成及方法」併述於此以供參 考。 圖2 C顯示根據本發明之具體實施例帶有一制止結構之 彈性接觸結構之簡化圖。互連總成23 1包括一基材232其 具有一佈線層237嵌置於其中。佈線層237係電耦合至彈 性接觸元件234之底部235。底部235耦合至樑部236。典 型如後述，樑部236及底部235於一次操作中一體成型。 底邵235及樑部236可含多層導電層例如圖2 A及2B顯示之 各層2〇8，209及210。於圖2A及2B所示具體實施例中， 彈性接觸元件234之樑部236由底部235 —端以相對於基材 232表面夾角一斜角伸出。制止結構233係設置於且黏著 於基材232表面上，也設置於且黏著於底部235頂面上。 如圖2C所示，佈線層237 —端以機械方式黏著於且電耦合 至底部235。因制止結構233係以機械方式黏著於基材232 頂面以及黏著於底部235頂面，故於底部235形成的任何 扭矩（當接觸襯塾例如圖4所示接觸襯塾411朝向基材232 表面加壓時對樑部236梢端施力所得結果）將於整個結構的 ** 14 - 本纸張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） (請先閱讀背面之注意事項再填寫本頁) · 1 n ϋ n in n 一：OJ· ·ϋ 經濟部智慧財產局員工消費合作社印製 518916 經濟部智慧財產局員工消費合作社印製V. Description of the invention (μ) When 216 is pressed, the upper surface of the stop structure 2n will join the corresponding surface of another substrate to prevent the substrate from being pressed further toward the surface of the substrate 202. In other words, the movement between the two substrates is limited by the stop structure 211, so the stop structure 211 will define the minimum distance between the two substrates and thus the maximum bending of the elastic contact element 212. Further advantages and use details of the stop structure are described in co-examined U.S. Patent Application No. 09 / 032,473, filed July 13, 1998, under the name "Interconnection Assembly and Method"; this patent application The name "Interconnection Assembly and Method" is also described here for reference. Fig. 2C shows a simplified diagram of an elastic contact structure with a stop structure according to an embodiment of the present invention. The interconnection assembly 23 1 includes a substrate 232 having a wiring layer 237 embedded therein. The wiring layer 237 is electrically coupled to the bottom portion 235 of the elastic contact element 234. The bottom portion 235 is coupled to the beam portion 236. Typically, as described later, the beam portion 236 and the bottom portion 235 are integrally formed in one operation. The base 235 and the beam portion 236 may include multiple conductive layers such as the layers 208, 209, and 210 shown in FIGS. 2A and 2B. In the specific embodiment shown in FIGS. 2A and 2B, the beam portion 236 of the elastic contact element 234 protrudes from the bottom 235 at an oblique angle relative to the surface of the substrate 232. The restraint structure 233 is disposed on and adhered to the surface of the substrate 232, and is also disposed on and adhered to the top surface of the bottom 235. As shown in FIG. 2C, one end of the wiring layer 237 is mechanically adhered to and electrically coupled to the bottom 235. Because the stopping structure 233 is mechanically adhered to the top surface of the substrate 232 and the top surface of the bottom 235, any torque formed on the bottom 235 (when the contact liner is shown in FIG. 4 and the contact liner 411 faces the surface of the substrate 232) The result obtained by applying force to the 236 tip of the beam part under pressure) will be ** for the entire structure. 14-This paper size applies Chinese National Standard (CNS) A4 specification (210 X 297 mm) (Please read the note on the back first) Please fill in this page again for matters) · 1 n ϋ n in n 1: OJ · · 印 Printed by the Employees 'Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 518916 Printed by the Employees' Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs

丨— l· --------^---------^91. (請先閱讀背面之注意事項再填寫本頁) A7 B7 五、發明說明（12 ^件平衡’包括制止結構233而不僅於底部235及樑御 、6平衡。另_具體實施例中，須了解制止結構可僅設置 於底邵235而未雙冒#其# 又置於基材232上，此制止結構傾向於平 衡於屁部產生的任何扭矩。 右干維度標示於圖2C也標示於圖3Α俾提供本發明之實 :。須了解下列實例僅供舉例説明本發明而非意圖限制本 *月’且絕非屬於本發明範圍内的全部可能結構例的排它 f合。距離c於—例（例如參考圖4)表示彈性接觸元件之 取大位移或偏轉。一例中，5巨離c約等於75微米（約3密 耳）。距離e通常係小於元件的依從性，元件依從性爲彈性 接觸70件與「故障」前可利用的偏轉或彎折總量。此種距 離於一例（參考圖4)表示梢端由未施力之—點㈣至梢端 被壓边而與制止結構233之頂面齊平之—點的行進距離。 此二狀態例如顯示於圖2C此處未施力於梢端，以及圖4此 處施力於梢端而使-基材4社表面大致接觸制止結構 406及407之頂面。 厚度t表示如圖2C所示彈性接觸元件之垂直剖面圖中彈 性接觸元件之總厚度。典型，此厚度於任何特定截面皆約 略相等’但帛了解於替代具體實施例中，此厚度於某些截 面可有不同。亦須了解圖2C表示彈性接觸元件以之簡化 例，底部及樑部可由-或多導電層製造。典型具體實施例 中’厚度約25微米，彈性接觸元件234之總高度㈣⑽微 米（約6密耳）。 用於某些具體實施例，彈性接觸元件之彈簧剛性係數約 -15丨 — l · -------- ^ --------- ^ 91. (Please read the notes on the back before filling out this page) A7 B7 V. Description of the invention (12 ^ balance) It includes the stop structure 233 and not only the bottom 235 and the beam y6, and the balance. In the specific embodiment, it must be understood that the stop structure can only be set on the bottom 235 and not double brace # 其 # and placed on the substrate 232. The restraining structure tends to balance any torque generated by the fart. The right-hand dimension is shown in Figure 2C and also shown in Figure 3A. The facts of the present invention are provided. It should be understood that the following examples are for illustrative purposes only and are not intended to limit this month. 'And by no means belongs to the exclusive combination of all possible structural examples within the scope of the present invention. The distance c in the example (for example, refer to FIG. 4) represents the large displacement or deflection of the elastic contact element. Equal to 75 microns (approximately 3 mils). The distance e is usually less than the compliance of the component, which is the total amount of deflection or bending that can be used before 70 elastic contacts with the "fault". This distance is an example (reference Figure 4) shows that the tip end is pressed from the point where no force is applied to the tip end and is flush with the top surface of the stop structure 233 -The distance traveled by the points. These two states are shown, for example, in FIG. 2C where no force is applied to the tip end, and in FIG. 4 where force is applied to the tip end so that the surface of the substrate 4 substantially contacts the stop structures 406 and 407. Top surface. Thickness t represents the total thickness of the elastic contact element in the vertical cross-sectional view of the elastic contact element as shown in FIG. 2C. Typically, this thickness is approximately equal in any particular cross-section ', but it is understood in alternative embodiments that this thickness It may be different in some cross sections. It should also be understood that FIG. 2C shows a simplified example of the elastic contact element. The bottom and the beam can be made of-or multiple conductive layers. In a typical embodiment, the thickness of the elastic contact element 234 is about 25 microns. Total height ㈣⑽ micron (about 6 mils). For some specific embodiments, the spring stiffness of the elastic contact element is about -15

本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） Α7This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) Α7

518916 五、發明說明（13 ) 克/金耳，此處彈簧剛性係數「k」表示彈簧力置於 2 =位私（k =: F/x)。須了解一旦對特定彈性接觸元件選 疋戎何及材料，則彈簧厚度通常可決定彈簧剛性係數。厚 度爲決定最大偏轉時的應力的主要因素，同時也與彈性接 觸凡件材料有關。須了解對彈性接觸s件將建立某些設計 玷或目“，使彈性接觸元件之最大可能應力低於預定量。 使用制止結構233傾向於控制最大應力量，也傾向於經由 兮抗I彈性接觸元件底邵的扭矩而解除於最大偏轉時的應 力。由圖4可知，容後詳述。 彈性接觸元件具有彎曲形狀，提供此處就圖2D，2E， 2F ’ 2G及2 Η所述之若干優點。圖2 D顯示彎曲彈性接觸元 件234A之剖面圖，包括一底部235A，一梢端239八及一彎 曲樑部236A。底部235A係電耦合至佈線層237。樑部曲率 可用以補彳貝彈性接觸元件偏轉過程中樑部的彎曲。此種補 償顯示於圖2E，2F，2G及2 Η之比較。 制止結構233設置於底部235Α上且（選擇性）設置於基材 232 上。 圖2Ε及2F分別顯示於彈性接觸元件偏轉前及偏轉後最 初爲比値的彈性接觸元件。當施力F至樑部236梢端時， 樑邵彎曲如圖2 F所示，如此造成梢端傾斜偏離另一基材 上的接觸點表面，且於表示接觸點表面之一線與通過樑部 末端之一線間形成一淺角θι。此線連同角θ示於圖2F。角 度淺對做良好電接觸而言爲非期望者。 圖2 G及2 Η分別顯示於彈性接觸元件偏轉之前及之後之 -16- 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公爱） I U----------裝--------訂--------- C請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 經濟部智慧財產局員工消費合作社印製 518916 A7 B7 五、發明說明（14) 初步彎曲的彈性接觸元件。當施力F於樑部236A及梢端 時，樑部伸直如圖2 Η所示。由於伸直結果，角θ2 (表示接 觸點表面及線通過樑部末端之線的夾角）不如角淺，因 而使用彎曲的彈性接觸元件可達成更優異的電接觸。 圖3A及3B顯示本發明之另一特徵方面’其中彈性接觸 元件之樑部實質爲三角形。彈性接觸元件301包括一底部 3 02，其係對應圖2 C之底部235。圖3 A之頂視圖顯示的樑 部303係對應於圖2 C之樑部236。樑部303包括一梢端 304，其係對應於圖2C之彈性接觸元件234之梢端239。樑 部303之三角形於梢端304被朝向底部302所停靠的表面加 壓時，傾向於更均勾分布形成的應力跨全樑（例如梢端至 底部）。如此允許於樑303使用較少材料而仍然獲得彈性接 觸元件之良好性能，例如於整個彈性接觸元件的使用壽命 可忍受持續應力。圖3 B顯示另一三角形彈性接觸元件。 圖3 C顯示實質爲三角形之彈性接觸元件3 1 〇之另一例之 頂視圖。本例中，三角形於電接觸末端3 12修改而包括部 份矩形。彈性接觸元件310之樑部通常可自行暨立且當加 壓時可偏轉，以及包括一三角形部件314及一矩形部件 312。三角形部件係附著於底部316。樑部可以斜角附著 於底部316，且可連同底部316以光刻術形成。可見於不 同截面3 18及3 2 0所取的截面積將有不同，此點對接觸元 件301及301A亦爲眞。 此種實質爲三角形之彈性接觸元件之樑部的幾何提供於 具有實質恒定截面積的懸臂樑彈簧的改良性能。也可選用 -ΙΛ 裝--------訂--------- (請先閱讀背面之注意事項再填寫本頁) -17-518916 V. Description of the invention (13) grams / gold ears, where the spring stiffness coefficient "k" means that the spring force is placed at 2 = position private (k =: F / x). It is important to understand that once a material is selected for a particular elastic contact element, the thickness of the spring usually determines the spring stiffness factor. Thickness is the main factor determining the stress at maximum deflection, and it is also related to the elastic contact with the material. It must be understood that certain design points or objectives will be established for the elastic contact element, so that the maximum possible stress of the elastic contact element is lower than a predetermined amount. The use of the restraining structure 233 tends to control the maximum stress amount, and also tends to resist elastic contact through I The torque at the bottom of the element relieves the stress at the time of maximum deflection. As can be seen in Fig. 4, the details will be described later. The elastic contact element has a curved shape, which is provided here as shown in Figs. 2D, 2E, 2F '2G and 22. Advantages. Fig. 2D shows a cross-sectional view of the curved elastic contact element 234A, including a bottom 235A, a tip 239 and a curved beam portion 236A. The bottom 235A is electrically coupled to the wiring layer 237. The curvature of the beam portion can be used to supplement the shell The deflection of the beam during the deflection of the elastic contact element. This compensation is shown in the comparison of Figures 2E, 2F, 2G and 2 Η. The stop structure 233 is placed on the bottom 235A and (optionally) on the substrate 232. Figure 2E And 2F respectively show the elastic contact element before and after the deflection of the elastic contact element. When the force F is applied to the tip of the beam portion 236, the beam is bent as shown in Fig. 2F, which causes the tip to tilt away The surface of the contact point on another substrate forms a shallow angle θι between a line representing the surface of the contact point and a line passing through the end of the beam portion. This line together with the angle θ is shown in Figure 2F. The shallow angle makes good electrical contact. Figure 2 G and 2 显示 show before and after the deflection of the elastic contact element -16- This paper size applies to China National Standard (CNS) A4 (210 X 297 public love) I U --- ------- Installation -------- Order --------- CPlease read the notes on the back before filling in this page) The Intellectual Property Bureau of the Ministry of Economic Affairs Employee Cooperatives Printed Economy Printed by the Ministry of Intellectual Property Bureau's Consumer Cooperatives 518916 A7 B7 V. Description of the invention (14) The elastic contact element that is initially bent. When the force F is applied to the beam portion 236A and the tip end, the beam portion straightens as shown in Fig. 2 (a). As a result of the straightening, the angle θ2 (indicating the angle between the surface of the contact point and the line passing through the end of the beam portion) is not as shallow, so the use of a curved elastic contact element can achieve better electrical contact. Figures 3A and 3B show the invention Another characteristic aspect, wherein the beam portion of the elastic contact element is substantially triangular. The element 301 includes a bottom portion 302, which corresponds to the bottom portion 235 of Fig. 2 C. The beam portion 303 shown in the top view of Fig. 3 A corresponds to the beam portion 236 of Fig. 2 C. The beam portion 303 includes a tip 304, which Corresponds to the tip 239 of the elastic contact element 234 of Fig. 2C. When the triangle of the beam portion 303 is pressurized by the surface on which the tip 304 stops toward the bottom 302, the stress tends to be more evenly distributed across the beam (for example, Tip to bottom). This allows the beam 303 to use less material and still obtain the good performance of the elastic contact element, for example, it can withstand continuous stress throughout the life of the elastic contact element. Figure 3B shows another triangular elastic contact element. Fig. 3C shows a top view of another example of the elastic contact element 3 1 0 which is substantially triangular. In this example, the triangle is modified at the electrical contact end 3 12 to include a partial rectangle. The beam portion of the elastic contact element 310 is generally self-standing and deflectable when pressurized, and includes a triangular member 314 and a rectangular member 312. A triangular member is attached to the bottom 316. The beam portion may be attached to the bottom portion 316 at an oblique angle, and may be formed by photolithography along with the bottom portion 316. It can be seen that the cross-sectional areas taken by the different sections 3 18 and 3 2 0 will be different, which is also 眞 for the contact elements 301 and 301A. The geometry of the beam portion of this substantially triangular elastic contact element provides improved performance of a cantilever beam spring with a substantially constant cross-sectional area. You can also use -ΙΛ equipment -------- Order --------- (Please read the precautions on the back before filling this page) -17-

518916 A7 ______B7五、發明說明（15 ) 經濟部智慧財產局員工消費合作社印 其它形狀對具有實質恒定截面積的懸臂樑彈簧提供改良的 性能。實質爲三角形形狀對處於應力下的彈簧提供較佳表 現，因而允許彈簧做更緊密的填裝（較小截距）。圖3D顯 示圖3 C所示該型緊密填裝（例如截距丨〇微米）彈性接觸元 件310A，310B，310C及310D之陣列於基材322上（可爲積 體電路或可用於測試或永久性接觸積體電路的電氣連結基 材）。樑部之幾何經選擇而可對指定尺寸約束（例如由接觸 兀件填裝決足的尺寸）以及對指定彈簧剛性係數以及對指 足/期望接觸元件之依從性提供最理想的應力表現。對指 足彈簧剛性係數以及指定依從性而言，由尺寸約束測得 寸較小則容易對具有恒定截面積的懸臂樑的某些點產生 ^應力。它方面，實質爲三角形之彈性接觸元件允許更 密的填裝（例如參考圖3D)以及更小的尺寸，同時對相守 彈簧剛性係數以及對指定依從性而言允許於應力 性能表現。 I佳 典型具體實施例中，維度gl2爲約9密耳，而維度1 約27密耳。此等彈性接觸元件陣列可形成於基材二:積 體電路或對積體電路做接觸的接觸器上俾形成此接 觸元件的緊密填裝陣列。圖㈣示一陣列於基材8〇3上接 局〈實例。-具體實施例中，彈性接觸元件可填裝 ㈣此眺鄰接觸元件間的對應點（例如底部）間距小於田W 治、耳甚至小牴0.1密耳丨約2 5 I ' 山寸U厶5微未）。圖3 D顯示 (緊岔截距）彈性接觸元件陣列之另—例。 * 、 現在參照圖4説明根據本發明之-具體實施例之互連總 緊等 積 佈 緊 3 0 -18518916 A7 ______B7 V. Description of the invention (15) Printed by the Consumers' Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs Other shapes provide improved performance for cantilever beam springs with a substantially constant cross-sectional area. The substantially triangular shape provides better performance for springs under stress, thus allowing the spring to be packed more tightly (smaller intercept). FIG. 3D shows the tightly packed (eg, intercept μm) elastic contact elements 310A, 310B, 310C, and 310D of the type shown in FIG. 3C on a substrate 322 (can be an integrated circuit or can be used for testing or permanent) Sexual contact of the electrical connection substrate of the integrated circuit). The geometry of the beam is selected to provide the optimal stress performance for a given dimensional constraint (such as the size to be filled by the contact element) as well as for a specified spring stiffness factor and compliance with the finger / desired contact element. For the stiffness coefficient of the finger spring and the specified compliance, the smaller size measured by the dimensional constraint is likely to cause stress on some points of the cantilever beam with a constant cross-sectional area. In this respect, the substantially triangular elastic contact element allows for denser packing (see, for example, Fig. 3D) and smaller dimensions, while allowing stress performance for phase-conserving spring stiffness and for specified compliance. In a preferred embodiment, dimension gl2 is about 9 mils and dimension 1 is about 27 mils. These elastic contact element arrays can be formed on substrate 2: integrated circuits or contactors that make contact with integrated circuits to form a tightly packed array of such contact elements. The figure shows an example of an array connected to a substrate 803. -In a specific embodiment, the elastic contact element may be filled. The distance between the corresponding points (such as the bottom) of the adjacent contact elements is smaller than Tian Wzhi, ears, and even small 牴 0.1 mils 丨 approximately 2 5 I 'mountain inch U 厶 5 Weiwei). Fig. 3D shows another example of (tight intercept) elastic contact element array. * 、 Now, the interconnection of the interconnection according to the specific embodiment of the present invention will be described with reference to FIG. 4.

本紙張尺度適用中國國家標準(CNS)^^_ (2ι〒 x 297公釐） ---r---------裝------ (請先閱讀背面之注意事項再填寫本頁) 518916 五、發明說明（16) 經濟部智慧財產局員工消費合作社印製 成實際使用。基材402包括一彈性接觸元件4〇3具有一樑 邵405及一底部404。此特定具體實施例中，樑部4〇5具有 二角形或其它形狀例如矩形。二制止結構4〇6及4〇7黏著 於基材402上表面，制止結構406也黏著於底4〇4之頂部。 底404可與基材402的佈線層415做機械及電接觸。須了解 基材402可爲半導體積體電路或爲被動佈線層例如探針卡 或插置器結構。另一具有接觸襯墊4n的互連總成41〇與 松4 405梢端做電機械接觸，如圖4所示。整個總成1包 括基材410及402被壓合在一起而確保樑部4〇5梢端與接觸 襯墊411表面間有良好加壓連結。接觸襯墊41丨係經由基 材410之佈線層412與其它組件做電接觸。因基材41〇係朝 向基材402壓迫，故樑部405梢端產生擦拭作用，如圖4所 不係沿箭頭413方向於橫向方向產生。如此確保樑部4〇5 與襯墊411間的電接觸，因而改良佈線層415與412間的電 接觸。須了解圖4舉例説明基材410完全壓迫背向基材4〇2 因而不再可「行進」（無法變得更接近）的情況。如此表示 彈性接觸元件403的最大偏轉。但，使用總成4〇1，二基 材無法毗連，故彈性接觸元件4〇3偏轉比最大偏轉小同時 仍然達成樑部405與襯墊411間可接受的導電性。最終所 得基材402及410的總成可藉多種技術（帶有彈性接觸元件 最大偏轉或小於最大偏轉）夾持定位，該等技術包括機械 力（例如圖4顯示的Fm )及/或藉黏著劑施於基材4〇2以及 410表面（圖中未顯示）。 現在説明互連總成之製法；此種方法表示本發明之特 -19-This paper size applies to Chinese National Standard (CNS) ^^ _ (2ι〒 x 297 mm) --- r --------- install ------ (Please read the precautions on the back before (Fill in this page) 518916 V. Description of invention (16) Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs for actual use. The substrate 402 includes an elastic contact element 403 having a beam 405 and a bottom 404. In this particular embodiment, the beam portion 405 has a square shape or other shapes such as a rectangle. The two stop structures 406 and 407 are adhered to the upper surface of the substrate 402, and the stop structure 406 is also adhered to the top of the bottom 404. The bottom 404 can make mechanical and electrical contact with the wiring layer 415 of the substrate 402. It should be understood that the substrate 402 may be a semiconductor integrated circuit or a passive wiring layer such as a probe card or an interposer structure. Another interconnection assembly 41 with a contact pad 4n makes electromechanical contact with the tip of pine 4 405, as shown in FIG. 4. The entire assembly 1 including the base materials 410 and 402 is pressed together to ensure a good pressure connection between the tip of the beam portion 405 and the surface of the contact pad 411. The contact pad 41 is in electrical contact with other components via the wiring layer 412 of the base material 410. Since the base material 410 is pressed toward the base material 402, a wiping effect occurs at the tip end of the beam portion 405, as shown in FIG. In this way, the electrical contact between the beam portion 405 and the pad 411 is ensured, so that the electrical contact between the wiring layers 415 and 412 is improved. It must be understood that FIG. 4 illustrates a case where the substrate 410 completely presses away from the substrate 402 and can no longer be "traveled" (cannot be made closer). This indicates the maximum deflection of the elastic contact element 403. However, using the assembly 401, the two substrates cannot be adjacent, so the deflection of the elastic contact element 403 is smaller than the maximum deflection while still achieving acceptable conductivity between the beam portion 405 and the gasket 411. The final assembly of the substrates 402 and 410 can be clamped and positioned by a variety of techniques (with the maximum deflection of the elastic contact element or less than the maximum deflection). These techniques include mechanical force (such as Fm shown in Figure 4) and / or by adhesion The agent is applied to the surfaces of the substrates 402 and 410 (not shown). The method of making the interconnection assembly will now be described; this method represents a special feature of the present invention.

經濟部智慧財產局員工消費合作社印製 518916 A7 ______ B7 五、發明說明（17) 例，須了解可使用替代技術及程序而採用多種其它方法。 圖5顯示之方法500始於操作5〇2。該種特定方法確保施加 重新分佈層俾重新分佈具有某種排列及幾何的接觸襯墊至 另一組具有不同配置及幾何的接觸襯墊。須了解於其它情 況下，可能無須重新分佈層，本發明之接觸元件可不含重 新分佈層而直接置於基材佈線層；參考圖6 £。操作5〇2 中’被動層例如聚醯亞胺層施加於基材上表面，基材帶有 接觸襯墊設置於該上表面上。一具體實施例中，聚醯亞胺 層可感塗於上表面而均勻遮蓋表面。然後被動層使用習知 光刻術圖樣化而於基材表面的接觸襯塾上方的被動層形成 開口。此等接觸襯墊可於半導體積體電路輸入/輸出互 連’或可接觸被動或主動板或基材例如探針卡或插置器或 其它互連總成上的終端。 圖6 A顯示基材602上表面具有接觸點604之互連總成601 之一例。佈線層603設置於基材602俾提供襯墊604與另一 組件（例如基材602内部電路或基材602的另一位置的接觸 終端）間的導電。須了解典型佈線層603係設置於基材602 的絕緣層内部。也須了解圖6 A所示部份爲基材602上部， 其它佈線層及/或電路係設置於圖6 A所示此部份的下部。 操作402時施加的被動層顯示爲圖6 A的被動層605。此被 動層已經被圖樣化而於接觸襯墊604上形成開口 606。 圖5之操作504中，短路層施加於被動層605表面上以及 施加於接觸襯墊604表面上。然後，習知抗光蝕劑施加於 短路層全體表面上，抗光蚀劑施加習知光刻術圖樣化而於 -20- 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） I U----------裝--------訂--------- (請先閱讀背面之注意事項再填寫本頁) 518916 A7 五、發明說明（18) 短路層上形成開口。短路層可由鈦或鈦/鎢或其它適當金 屬化製造且可濺鍍於被動層605表面上。操作504後，所 得互連總成之一例顯示於圖6 B。圖6 B之互連總成608包 括一短路層6〇9設置於被動層605及接觸襯墊6〇4上。接觸 襯墊與短路層609爲導電。圖樣化之抗光蝕劑層61〇包括 一開口 611於短路層之一部份上。此開口將用來形成重新 分佈層，其中接觸襯墊6〇4的佈局將重新分佈至另一位 置。如此可於彈性接觸元件已經形成於基材6〇2上時於處 理結束時達成互連節距的鬆弛。圖6 c顯示重新分佈佈線 層之頂視圖。特別，圖6 C顯示抗光蝕劑層6丨〇之圖樣，已 經於圖樣化之抗光蝕劑610形成一孔。孔曝露出短路層 6 0 9之一邵份，如圖6 C所示。 圖5之操作506中，重新分佈層施加於短路層上。此層 重新分佈層可藉電解鍍敷（或吳電鍍敷）金屬層（例如銅^ 金）至短路層之暴露部份上施加，此處短路層係用做電解 鍍敷操作的陰極。須了解於典型基材上，將有許多此種重 新分佈軌線形成於基材表面上於圖樣化抗光蝕劑6丨〇的各 個圖樣化開口内部。 消 訂 已經施加重新分佈層後，圖樣化抗光蝕劑層61〇被移 開，移開圖樣化抗光蝕劑層後暴露出的短路層也被移開。 重新分佈層可用做爲罩蓋俾去除短路層。如此，於此種情 況下，典型使用一種金屬（例如Ti/W)形成短路層，以及 使用另一金屬（例如Cu)形成重新分佈層，故重新分佈層 將維持完整，同時短路層係於對重新分佈層金屬對其有^ -21 - 本紙張尺度適用中關家標準（CNS)A4規格（210 x 297公爱） 518916 經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明說明（19 ) 性的溶劑或蝕刻劑作用之下被蝕刻或去除。操作5〇6結果 顯示於圖6D。可知圖樣化抗光蝕劑層61〇已經被去除，短 路層609之未受保護部份也被去除，留下圖6 〇所示互連總 成614之結構。另一具體實施例中，其中短路層6〇9需要 用於隨後的電解鍍敷（由於層642具有開口因而具有電隔離 區），則短路層009位於操作506被去除反而於操作514被 去除。 須了解操作502，504及506用來形成複數重新軌線例如 重新分佈層於基材602表面上。某些情況下要求接觸襯墊 設計爲連結至彈性接觸元件以外的互連機構，或可能由於 其它因素而需如此進行。也須了解，某些例中無須此種重 新分佈層，故彈性接觸元件可製造於基材表面上的通孔或 其它接觸元件上。通孔之例顯示於圖6E，其中一導電材 料柱623設置於基材621上表面622。此種導電柱623係電 1¾合至佈線層623 ’佈線層也在基材621上。典型包封佈 線層624及柱623的材料爲絕緣層。基材621典型爲半導體 積體電路的一部份，但也可使用其它互連總成，例如印刷 佈線基材、插置件等。圖6E所示來自結構62〇的處理類似 圖6D所示由圖5之步驟5〇8至516之結構6U的處理。換言 之，雖然結構620無需於操作5 02，504及5 0 6中處理，但 如圖6D所示結構614，可以操作508，510，512，514及 516處理。 方法500之次一操作爲操作508，其中抗光蝕劑被施加及 圖樣化而包括一開口，開口於抗光蝕劑上有一斜面。、纟士果 ^--------^---- (請先閱讀背面之注意事項再填寫本頁) -22- 518916 Α7 Β7Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 518916 A7 ______ B7 V. Description of Invention (17) For example, it is necessary to understand that alternative technologies and procedures can be used to adopt a variety of other methods. The method 500 shown in FIG. 5 begins with operation 502. This particular method ensures that a redistribution layer is applied: redistribution of contact pads with a certain arrangement and geometry to another set of contact pads with a different configuration and geometry. It should be understood that in other cases, the redistribution layer may not be necessary. The contact element of the present invention may be directly placed on the substrate wiring layer without the redistribution layer; refer to FIG. 6. In operation 502, a 'passive layer such as a polyimide layer is applied to the upper surface of the substrate, and the substrate is provided with a contact pad on the upper surface. In a specific embodiment, the polyimide layer can be applied on the upper surface and cover the surface uniformly. The passive layer is then patterned using conventional photolithography to form an opening on the passive layer above the contact liner on the substrate surface. These contact pads may be used in semiconductor integrated circuit input / output interconnections' or may contact terminals on passive or active boards or substrates such as probe cards or interposers or other interconnect assemblies. FIG. 6A shows an example of an interconnection assembly 601 having a contact point 604 on the upper surface of the substrate 602. The wiring layer 603 is provided on the base material 602, and provides conduction between the pad 604 and another component (for example, an internal circuit of the base material 602 or a contact terminal at another position of the base material 602). It should be understood that the typical wiring layer 603 is disposed inside the insulating layer of the substrate 602. It should also be understood that the part shown in FIG. 6A is the upper part of the substrate 602, and other wiring layers and / or circuits are provided at the lower part of this part shown in FIG. 6A. The passive layer applied during operation 402 is shown as the passive layer 605 of FIG. 6A. This passive layer has been patterned to form an opening 606 in the contact pad 604. In operation 504 of FIG. 5, a short-circuit layer is applied on the surface of the passive layer 605 and on the surface of the contact pad 604. Then, the conventional photoresist is applied to the entire surface of the short-circuit layer, and the conventional photoresist is patterned at -20. This paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) I U ---------- Installation -------- Order --------- (Please read the precautions on the back before filling this page) 518916 A7 V. Description of the invention (18) An opening is formed in the short-circuit layer. The shorting layer may be made of titanium or titanium / tungsten or other suitable metallization and may be sputtered on the surface of the passive layer 605. An example of the obtained interconnection assembly after operation 504 is shown in Fig. 6B. The interconnect assembly 608 of FIG. 6B includes a short-circuit layer 609 disposed on the passive layer 605 and the contact pad 604. The contact pad and the short-circuit layer 609 are conductive. The patterned photoresist layer 610 includes an opening 611 in a portion of the short-circuit layer. This opening will be used to form a redistribution layer where the layout of the contact pads 604 will be redistributed to another location. In this way, relaxation of the interconnect pitch can be achieved when the elastic contact element has been formed on the substrate 602 at the end of the processing. Figure 6c shows a top view of the redistribution routing layer. In particular, Fig. 6C shows the pattern of the photoresist layer 6o0, and the patterned photoresist 610 forms a hole. The hole exposes one part of the short-circuit layer 609, as shown in FIG. 6C. In operation 506 of FIG. 5, a redistribution layer is applied to the short-circuit layer. This layer redistribution layer can be applied by electrolytic plating (or Wu plating) metal layer (such as copper ^ gold) to the exposed part of the short-circuit layer, where the short-circuit layer is used as the cathode of the electrolytic plating operation. It must be understood that on a typical substrate, many such redistribution trajectories are formed on the surface of the substrate inside the patterned openings of the patterned photoresist 6o. After the redistribution layer has been applied, the patterned photoresist layer 61 is removed, and the short-circuited layer exposed after the patterned photoresist layer is removed is also removed. The redistribution layer can be used as a cover to remove the short circuit layer. Thus, in this case, one metal (such as Ti / W) is typically used to form the short-circuit layer, and another metal (such as Cu) is used to form the redistribution layer, so the redistribution layer will remain intact, while the short-circuit layer is connected to the Redistribution layer metal has ^ -21-This paper size applies the Zhongguanjia Standard (CNS) A4 specification (210 x 297 public love) 518916 Printed by the Consumers ’Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 B7 V. Invention Description (19 ) Is etched or removed under the action of a solvent or etchant. The result of operation 506 is shown in Fig. 6D. It can be seen that the patterned photoresist layer 61o has been removed, and the unprotected portion of the short circuit layer 609 has also been removed, leaving the structure of the interconnection assembly 614 shown in FIG. 60. In another specific embodiment, in which the short-circuit layer 609 is required for subsequent electrolytic plating (the layer 642 has an opening and thus has an electrical isolation region), the short-circuit layer 009 is removed at operation 506 instead of operation 514. It should be understood that operations 502, 504, and 506 are used to form a plurality of redistribution lines such as redistribution layers on the surface of substrate 602. In some cases it is required that the contact pad is designed to be connected to an interconnecting mechanism other than the elastic contact element, or this may be required for other reasons. It should also be understood that in some cases such a redistribution layer is not required, so that the elastic contact element can be manufactured in a through hole or other contact element on the surface of the substrate. An example of a through hole is shown in FIG. 6E, in which a conductive material column 623 is disposed on the upper surface 622 of the substrate 621. The conductive pillar 623 is electrically coupled to the wiring layer 623 'and the wiring layer is also on the substrate 621. The material of the typical encapsulating cloth layer 624 and the pillar 623 is an insulating layer. The substrate 621 is typically part of a semiconductor integrated circuit, but other interconnect assemblies such as printed wiring substrates, interposers, etc. may be used. The processing from structure 62O shown in FIG. 6E is similar to the processing of structure 6U shown in FIG. 6D from steps 508 to 516 of FIG. In other words, although the structure 620 does not need to be processed in operations 502,504, and 506, as shown in the structure 614 shown in FIG. 6D, operations 508, 510, 512, 514, and 516 can be processed. The next operation of method 500 is operation 508, where the photoresist is applied and patterned to include an opening, and the opening has a bevel on the photoresist. 、 纟 士 果 ^ -------- ^ ---- (Please read the notes on the back before filling this page) -22- 518916 Α7 Β7

五、發明說明（2〇) 經濟部智慧財產局員工消費合作社印制衣 所得互連總成結構顯示爲圖6 F之結構63 1。抗光蝕劑633 已經被施加及圖樣化而形成一開口 632，於開口部份有個 斜面634。開口係至少部份設置於導電層615之部份上。 須了解典型開口的平坦部份用以組構彈性接觸元件的底 部，而斜面部份634用以組構彈性接觸元件的樑部。 業界已知無數技術形成開口與光蝕劑而包括斜面於抗光 触劑。例如，具有相對連續不透明度梯度由透明至黑色的 灰階罩蓋可用來與抗光蝕劑形成斜面。其它方法也可提供 變尖側壁，包括：溫和再流動罩蓋材料而使開口 _邊變 尖；控制罩蓋材料的曝光強度或曝光時間；曝光期間改變 罩蓋距罩蓋層的距離；曝光罩蓋層二或多次，一次係通過 有小的透明區之罩蓋而另一次係通過有較大透明區的罩 盍；或此等方法的組合。形成有變尖側壁之開口之方法進 一步説明於同在審查中之美國專利申請案名稱「光刻術界 定爲電子接觸結構」，如前文引述且併述於此以供參考。 雖然後文説明模具用於可變形材料衝壓一斜面之方法，該 材料隨後用於形成彈性接觸元件。 於操作508後，操作510涉及施加種晶層，然後施加及圖 樣化抗光蝕劑層而對彈性接觸元件形成三角形開口（一具 體實施例）。圖6 G所示種晶層642可藉習知濺鍍適當金屬 層（例如銅或鈥或鈦/鎢）於抗光蝕劑633表面上施加。若短 路層609已經於操作506去除，則種晶層642須提供連續導 電面，但側壁645除外；但若短路層609於操作506仍然保 留，則種晶層642須於全部表面解除電連結。 -23- 本紙張尺度適用中國國家標準（CNS)A4規格（21〇 χ 297公釐）---' -------------裝--------訂--- (請先閱讀背面之注意事項再填寫本頁) 518916 經濟部智慧財產局員工消費合作社印制衣 A7 B7 五、發明說明（21) 較佳具體實施例中，於濺鍍操作須小心防止或避免濺鍍 材料保留於垂直側壁645，故抗光蝕劑633的開口未接受 種晶材料的連績層。另一具體實施例中，濺鍍確實遮蓋部 份或全邵垂直側壁645。此具體實施例中，通常較佳於隨 後的罩蓋及圖樣化步驟遮蓋部份或全部經過濺鍍的側壁， 因而減少或防止隨後額外導電材料沉積於垂直側壁上。 於種晶層642施加之後，抗光蝕劑層施加於種晶層642表 面，如圖6 G所π。此抗光蝕劑層隨後經圖樣化而於圖樣 化後的抗光蝕劑層646形成開口 643，如圖6 G所示。此開 口將用於種晶層642的暴露頂面上沉積至少一導電層例如 金屬層。包括沉積彈性接觸元件之亮部於種晶層642暴露 邵的斜面部份644上。通常希望隨後的鍍敷或其它沉積操 作以規則方式填補最終所得形狀輪廓。較佳具體實施例 中’種晶層係沉積爲主要爲抗光蝕劑的底部開口，特別抗 光蚀劑係來自操作510之罩蓋及/或圖樣化期。 圖6G顯示操作510完成後結構641之一例。圖6H顯示結 構641 <邵份頂視圖。特別，開口 643上之結構641部份顯 π於圖6 Η之頂視圖。可見圖樣化之抗光蝕劑層646經暴露 種晶層042部份。圖6Η所示特例中，彈性接觸元件底部將 形成於暴露種晶層642之矩形部份，而彈性接觸元件之樑 部將形成於暴露種晶層642的三角形部份。如此形成一種 彈性接觸結構，其具有樑部實質_爲三角形，例如圖3 Α所 示彈性接觸結構。須了解於其它具體實施例，其它形狀例 如矩形也可用於樑邵，因此此種結構的頂視圖將與圖6 h -24- 本紙張尺度適用巾國國家標準（CNS)A4規格（21〇 X 297公爱) i!----------裝--------訂--- (請先閱讀背面之注意事項再填寫本頁) 518916V. Description of the invention (20) The structure of the interconnected assembly obtained from the printing of clothing by the employee's consumer cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs is shown in Figure 6 F. Structure 63 1. The photoresist 633 has been applied and patterned to form an opening 632 with an inclined surface 634 in the opening portion. The opening is at least partially disposed on a portion of the conductive layer 615. It should be understood that the flat portion of a typical opening is used to configure the bottom portion of the elastic contact element, and the bevel portion 634 is used to configure the beam portion of the elastic contact element. Numerous techniques are known in the industry to form openings and photoresists including bevels and photoresists. For example, a grayscale cover with a relatively continuous opacity gradient from transparent to black can be used to form a bevel with a photoresist. Other methods can also provide sharpened side walls, including: gently reflowing the cover material to sharpen the opening edge; controlling the exposure intensity or exposure time of the cover material; changing the distance of the cover from the cover layer during exposure; the exposure mask The cover layer is two or more times, once through a cover with a small transparent area and another through a cover with a large transparent area; or a combination of these methods. The method of forming the opening with the tapered side wall is further explained in the co-examined US patent application titled "Photolithography is defined as an electronic contact structure", as previously cited and described herein for reference. Although the method of stamping a bevel of a deformable material is described later, the material is then used to form an elastic contact element. After operation 508, operation 510 involves applying a seed layer, and then applying and patterning a photoresist layer to form a triangular opening to the elastic contact element (a specific embodiment). The seed layer 642 shown in FIG. 6G can be applied on the surface of the photoresist 633 by conventionally sputtering a suitable metal layer (for example, copper or titanium or tungsten / tungsten). If the short-circuit layer 609 has been removed in operation 506, the seed layer 642 must provide a continuous conductive surface, except for the side wall 645; but if the short-circuit layer 609 remains in operation 506, the seed layer 642 must be electrically disconnected on all surfaces. -23- This paper size is applicable to China National Standard (CNS) A4 specification (21〇χ 297 mm) --- '------------- installation -------- order --- (Please read the precautions on the back before filling this page) 518916 Printed clothing A7 B7 of the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 5. Description of the invention (21) In the preferred embodiment, care must be taken in the sputtering operation The sputtering material is prevented or prevented from remaining on the vertical sidewall 645, so the opening of the photoresist 633 does not receive a continuous layer of seed material. In another embodiment, the sputtering does cover part or all of the vertical sidewalls 645. In this specific embodiment, it is generally preferred to cover part or all of the sputtered sidewalls in subsequent masking and patterning steps, thereby reducing or preventing subsequent deposition of additional conductive material on the vertical sidewalls. After the seed layer 642 is applied, a photoresist layer is applied to the surface of the seed layer 642, as shown in FIG. 6G. This photoresist layer is then patterned to form an opening 643 in the patterned photoresist layer 646, as shown in FIG. 6G. This opening will be used to deposit at least one conductive layer, such as a metal layer, on the exposed top surface of the seed layer 642. The bright portion including the deposited elastic contact element is formed on the bevel portion 644 of the seed layer 642 that is exposed. It is often desirable that subsequent plating or other deposition operations fill the resulting shape profile in a regular manner. In a preferred embodiment, the 'seed layer system is deposited as a bottom opening that is mainly a photoresist, especially the photoresist comes from the cover and / or patterning period of operation 510. FIG. 6G shows an example of the structure 641 after the operation 510 is completed. Fig. 6H shows a top view of the structure 641 < Shao Fen. In particular, the portion 641 of the structure on the opening 643 is shown in the top view in FIG. It can be seen that the patterned photoresist layer 646 is exposed to the seed layer 042 portion. In the specific example shown in FIG. 6 (a), the bottom of the elastic contact element will be formed on the rectangular portion of the exposed seed layer 642, and the beam portion of the elastic contact element will be formed on the triangular portion of the exposed seed layer 642. Thus, an elastic contact structure is formed, which has a substantially triangular beam structure, such as the elastic contact structure shown in FIG. 3A. It must be understood in other specific embodiments, other shapes such as rectangles can also be used for Liang Shao, so the top view of this structure will be the same as that shown in Figure 6 h -24- This paper size applies to the national standard (CNS) A4 (21〇X) 297 public love) i! ---------- install -------- order --- (Please read the precautions on the back before filling this page) 518916

五、發明說明（22 不同。 (請先閱讀背面之注意事項再填寫本頁) 於結構64i已經藉操作51〇形成時，對結構64i進行操作 512而獲得圖61所示結構651。操作512典型涉及一且贿奋 施例，其巾電解鍍敷第一金屬層然後第二金屬層於：角： 開口内#。替代具體實施例中，㈣口具有不同形狀（例如 矩形因而形成矩形樑部）且可採用其它方法來沉積一或多 層導電層於開口内部。種晶層642(若種晶層斜2於其表面 上八土爲非％連績則爲保有的下方短路層）將用於電解鍍 敷操作做爲陰極而鍍敷金屬層652及653於開口 643内部短 路層的暴露部上，如圖61所示。一具體實施例中，第二 金屬層652選擇爲提供充份機械彈性，故最終彈性接觸元 件對其預期操作具有足夠彈性。一特定具體實施例中可使 用鎳鈷合金。此種合金爲7〇%鎳及3〇%鈷。此種合金可 如同在春查中之申請案第號，申請曰MW年9 月1 7日所述接受加熱處理。第二金屬層653典型經選擇而 提供良好導電性；例如可使用金，或鍺或鈀鈷合金。多種 其它層及材料的組成容後詳述。亦須了解對此等金屬層可 選用無數其它類型材料，此等材料述於美國專利 5,476,211 〇 經濟部智慧財產局員工消費合作社印製 於一或多層導電層已經沉積於開口 643内部且已經完成 結構651後，進行操作514來去除抗光蝕劑層及被濺鍍的 短路層而獲得圖6 J所示結構661。採用習知去除抗光蝕劑 之溶劑或乾蝕刻方法，使用可選擇性去除被濺鍍的種晶層 例如種晶層642的溶劑或蚀刻劑來去除短路層。如此，去 -25- 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 518916 A7 B7 經 濟 部 智 慧 財 產 局 消 費 合 作 社 印 製 五、發明說明（23 ) 除圖樣化之抗光蝕劑層646及圖樣化之抗光蝕劑層636。 又幾乎全邵種晶層642皆被去除，但彈性接觸元件662底 邵下方該層邵份除外，如圖6 j所示。如此獲得圖6 j所示 結構，然後其可用做爲互連總成（不含行進制止結構）或一 操作516已經形成此種結構後可用於行進制止結構。 若需要對互連總成形成制止結構，則以結構661進行步 驟516。此項操作涉及施加可光成像材料（piM)，例如負 抗光姓劑例如SU8 (市面可得）於結構661之全體表面上。 需要可光成像材料一致施加爲均勻厚度且相對平坦，較佳 儘可能平坦。如此較佳懸塗可光成像材料例如抗光蝕劑於 結構661表面上。須小心施加足量抗光蝕劑材料，因而於 磋塗之後可遮盍彈性接觸元件662底部。換言之，由此懸 塗抗光蝕劑形成的最終結構高度需超過彈性接觸元件底部 咼度h。典型地，最終結構高度也低於彈性接觸元件之自 仃豎互接觸點高度。典型地，自行豎立接觸點高度與藉此 種抗光蚀劑形成的最終制止結構高度間的差異須製造成爲 前述最大偏轉量c。 ~ 於適量抗光蝕劑施加而達成抗光蝕劑具有相對於彈性接 觸元件底部高度h的預定高度後，抗光蝕劑層被曝光及顯 像。抗光蝕劑層係經由罩蓋69〇曝光，故彈性接觸元件樑 邵周圍及下方區域保持未曝光而鄰近區域變成曝光。由於 一具體實施例之可光成像材料爲負抗光蝕劑，如此表示因 罩蓋690而未被曝光區將被顯像去除抗光蝕劑（而抗光蝕劑 的曝光邵份將保留），形成圖6 κ所示開口 674。本具體奋 -26- 本紙張尺度適用中關家標準（CNS)A4規格（210 X 297公爱 丨^----------裝--------訂--------- (請先閱讀背面之注意事項再填寫本頁) 518916 經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明說明（24) 施例中，此種罩蓋690爲矩形罩蓋，提供足夠餘隙供樑部 於開口 674上下移動。另一具體實施例中，罩蓋690爲三 角形罩蓋，當彈性接觸元件具有三角形樑形狀時，罩蓋設 計成嵌合於彈性接觸元件樑部之三角形周圍。如此，由操 作516獲得圖6 K所示結構671，且產生制止結構672，制 止結構672係黏著於被動層605及黏著於導電層615及黏著 於彈性接觸結構之底部652A及653A。注意部份673制止結 構672係黏著於且於底部653A及652A之上。 圖6 L顯示圖6 K所示結構的頂視圖。圖6 L確保罩蓋690 具有三角形而非矩形。如此，形成制止結構的圖樣化抗光 餘J 672開口爲二角形開口 ’該開口匹配三角形操部形 狀’同時提供足夠餘隙供樑部於開口 674内部上下移動。 底郅653a顯示位於圖6 L之行進制止結構672下方。替代具 體實施例中，矩形罩蓋690a用於曝光操作516於樑部上方 形成一矩形開口 674a，如圖7B所示。此種制止結構672的 矩形開口可用於圖7 B所示三角形樑部，或可用於矩形樑 部。須了解無論選用何種罩蓋幾何，須對樑部提供足構餘 隙而可於制止結構672的開口内部上下移動。 圖7A顯示複數彈性接觸元件之剖面圖，包括制止結構 環繞於且設置於彈性接觸元件底部上。 圖8A顯示形成彈性接觸元件之替代具體實施例，該接 觸元件包括三部份：一底部，一”及—接觸部。接觸部 可用於接觸第二電子組件，細節説明如前。此外，接觸部 可用於附著梢端結構於樑部末端。各種梢端結構及安裝梢 -27- 本紙張尺度適用中國國家標準（CNS)A4規格（21〇 x 297公釐） (請先閱讀背面之注意事項再填寫本頁) 裝 ----訂---- 518916 經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明說明（25) 端結構之方法實例述於同在審查中之美國專利申請案名稱 「光刻術界定微電子接觸結構」也述於同在審查中之美國 專利申請案08/819,464，申請日1997年3月1 7日。特別， 圖8 A顯示於互連總成製法於操作5 12之階段後的結構（不 含操作502，504及506，因此種總成未利用重新分佈層）。 圖8 A之結構包括一導電柱604a設置於基材6〇2a之絕緣 層。導電柱係電耦合至種晶層642a，該層對應圖6 I之種 晶層642。種晶層642a已經被濺鍍圖樣化抗光蝕劑層 633a，包括一開口具有一斜面側壁。被賤嫂後的種晶層 642a用於電解鍍敷二金屬層而形成圖8A所示結構。電解 鍍敷操作係透過圖樣化抗光蚀劑罩蓋646a進行，該罩蓋係 對應圖6 I之圖樣化罩蓋646。於鍍敷操作後，各金屬層包 括一底邵如底部653a，一樑部如樑部653b，及一接觸部如 接觸部653c。於電鍍操作完成後，可進行操作514而去除 抗光蚀劑層646a及633a，然後可去除經過澉鍍的種晶層 642a，但底部653a下方部份除外。結果所得結構可用於互 連總成做爲彈性接觸元件不含制止結構，或如前述可進行 操作5 1 6而形成制止結構。 圖8 B説明二彈性接觸元件8〇1及8〇2陣列8〇〇於基材8们 表面。圖8 B爲透視圖，須了解典型大數目彈性接觸元件 可設置於基材表面，例如半導體積體電路或其它互連總 成。圖8B顯示的彈性接觸元件類似圖8八所示類型，在^ 樑部結構末端包括一接觸部。樑結構例如樑65邛實質上 可爲三角形而附著於底部653Α。接觸部653c本身可做爲 本紙張尺錢財目目家標準（CNS)A4規; ^ 裝--------訂---- (請先閱讀背面之注意事項再填寫本頁) # -28-V. Description of the invention (22 different. (Please read the notes on the back before filling in this page) When the structure 64i has been formed by operation 51, operation 512 is performed on the structure 64i to obtain the structure 651 shown in FIG. 61. The operation 512 is typical In a bribery embodiment, the towel is electrolytically plated with a first metal layer and then a second metal layer at: corner: 内 内 #. In alternative embodiments, the mouths have different shapes (for example, rectangular and thus rectangular beam portions) Other methods can be used to deposit one or more conductive layers inside the opening. The seed layer 642 (if the seed layer is inclined 2 on its surface is non-% continuous, the remaining short-circuit layer is used) will be used for electrolysis The plating operation is used as the cathode and the metal layers 652 and 653 are plated on the exposed portion of the short circuit layer inside the opening 643, as shown in Figure 61. In a specific embodiment, the second metal layer 652 is selected to provide sufficient mechanical elasticity. Therefore, the final elastic contact element has sufficient elasticity for its intended operation. In a specific embodiment, a nickel-cobalt alloy can be used. Such an alloy is 70% nickel and 30% cobalt. Such an alloy can be applied as in the spring investigation. Case number, Please heat treatment as described on September 17th, MW. The second metal layer 653 is typically selected to provide good electrical conductivity; for example, gold, or germanium or palladium-cobalt alloys can be used. The composition of various other layers and materials is described later. It must also be understood that there are countless other types of materials that can be used for these metal layers. These materials are described in US Patent 5,476,211. Intellectual Property Bureau Employees Consumer Cooperatives of the Ministry of Economics printed on one or more conductive layers that have been deposited inside the opening 643 and After the structure 651 has been completed, operation 514 is performed to remove the photoresist layer and the sputtered short-circuit layer to obtain the structure 661 shown in FIG. 6J. The solvent or dry etching method for removing the photoresist is conventionally used. Selectively remove the sputtered seed layer such as the solvent or etchant of seed layer 642 to remove the short-circuit layer. In this way, go to -25- This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) 518916 A7 B7 Printed by the Consumer Cooperatives, Bureau of Intellectual Property, Ministry of Economic Affairs. 5. Description of the Invention (23) Except for the patterned photoresist layer 646 and the patterned photoresist layer 636. The crystal layer 642 is removed, except for the layer below the bottom of the elastic contact element 662, as shown in Fig. 6 j. In this way, the structure shown in Fig. 6 j is obtained, and then it can be used as an interconnection assembly (excluding travel) (Suppression structure) or an operation 516 has been used to form a stop structure. If it is necessary to stop the interconnection assembly, step 516 is performed with structure 661. This operation involves the application of a photoimageable material (piM) For example, a negative anti-light surname agent such as SU8 (available on the market) is on the entire surface of the structure 661. It is required that the photo-imaging material is uniformly applied to a uniform thickness and relatively flat, preferably as flat as possible. The surface of structure 661 is thus preferably overcoated with a photoimageable material such as a photoresist. Care must be taken to apply a sufficient amount of photoresist material so that the bottom of the elastic contact element 662 can be masked after the application. In other words, the height of the final structure formed by the suspended photoresist needs to exceed the height h of the bottom of the elastic contact element. Typically, the final structural height is also lower than the height of the self-supporting vertical contact points of the elastic contact element. Typically, the difference between the height of the self-erected contact point and the height of the final stop structure formed by this photoresist must be made to the aforementioned maximum deflection amount c. ~ After an appropriate amount of photoresist is applied to achieve a predetermined height of the photoresist relative to the height h of the bottom of the elastic contact element, the photoresist layer is exposed and developed. The photoresist layer is exposed through the cover 69, so the area around and below the elastic contact element beam Shao remains unexposed and the adjacent area becomes exposed. Since the photoimageable material of a specific embodiment is a negative photoresist, it means that the unexposed area due to the cover 690 will be developed to remove the photoresist (while the exposure of the photoresist will remain) , Forming the opening 674 shown in FIG. 6 κ. This specific Fen-26- This paper size is applicable to the Zhongguanjia Standard (CNS) A4 specification (210 X 297 Public Love 丨 ^ ---------- Installation -------- Order --- ------ (Please read the precautions on the back before filling this page) 518916 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 B7 V. Description of the invention (24) In the embodiment, this cover 690 is rectangular The cover provides sufficient clearance for the beam portion to move up and down the opening 674. In another specific embodiment, the cover 690 is a triangular cover, and when the elastic contact element has a triangular beam shape, the cover is designed to fit into the elastic contact Around the triangle of the element beam portion. In this way, the structure 671 shown in FIG. 6K is obtained by operation 516, and a stop structure 672 is generated, which is adhered to the passive layer 605 and the conductive layer 615 and to the bottom of the elastic contact structure. 652A and 653A. Note that part 673 deterrent structure 672 is adhered to and above the bottom 653A and 652A. Figure 6L shows a top view of the structure shown in Figure 6K. Figure 6L ensures that the cover 690 has a triangle rather than a rectangle. In this way, the patterned anti-light I 672 opening that forms the stop structure is a two-sided opening. The opening matches the shape of the triangular operating part 'while providing enough clearance for the beam section to move up and down inside the opening 674. The bottom 。653a is shown below the line stop structure 672 in Fig. 6 L. In an alternative embodiment, a rectangular cover 690a is used for exposure Operation 516 forms a rectangular opening 674a above the beam portion, as shown in Fig. 7B. The rectangular opening of the stop structure 672 can be used for the triangular beam portion shown in Fig. 7B, or it can be used for the rectangular beam portion. The cover geometry must provide foot structure clearance for the beam portion to move up and down inside the opening of the restraint structure 672. Figure 7A shows a cross-sectional view of a plurality of elastic contact elements, including the restraint structure surrounding and arranged on the bottom of the elastic contact element. FIG. 8A shows an alternative embodiment of forming an elastic contact element. The contact element includes three parts: a bottom, a ", and a contact portion. The contact portion can be used to contact a second electronic component, as described in detail above. In addition, the contact portion Can be used to attach the tip structure to the end of the beam. Various tip structures and mounting pins-27- This paper size applies to China National Standard (CNS) A4 (21〇x 297 mm) (Please read the precautions on the back before filling out this page) Binding ---- Order 518916 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 B7 V. Invention Description (25 An example of the method of the end structure is described in the co-examined US patent application titled "Photolithography Defined Microelectronic Contact Structure" and also described in the co-examined U.S. patent application 08 / 819,464. 17th. In particular, FIG. 8A shows the structure after the operation of the interconnection assembly method after operation 5 12 (excluding operations 502, 504, and 506, so the assembly does not use the redistribution layer). The structure of FIG. 8A includes an insulating layer with a conductive pillar 604a disposed on a substrate 602a. The conductive pillar system is electrically coupled to the seed layer 642a, which corresponds to the seed layer 642 of FIG. 6I. The seed layer 642a has been patterned with a patterned photoresist layer 633a and includes an opening with a beveled sidewall. The seed layer 642a after being ridden is used for electrolytic plating of the two metal layers to form the structure shown in FIG. 8A. The electrolytic plating operation is performed through a patterned photoresist cover 646a, which corresponds to the patterned cover 646 of FIG. 6I. After the plating operation, each metal layer includes a bottom portion such as the bottom portion 653a, a beam portion such as the beam portion 653b, and a contact portion such as the contact portion 653c. After the electroplating operation is completed, operation 514 may be performed to remove the photoresist layers 646a and 633a, and then the seed layer 642a after the hafnium plating may be removed, except for the portion below the bottom 653a. The resulting structure can be used in the interconnection assembly as a resilient contact element without a stop structure, or as described above, operations 5 1 6 can be performed to form a stop structure. FIG. 8B illustrates two elastic contact elements 801 and 802 array 800 on the surface of the substrate 8. Figure 8B is a perspective view. It should be understood that a typical large number of elastic contact elements can be disposed on the surface of a substrate, such as a semiconductor integrated circuit or other interconnection assembly. The elastic contact element shown in FIG. 8B is similar to the type shown in FIG. 8 and includes a contact portion at the end of the beam structure. A beam structure such as the beam 65 'may be substantially triangular and attached to the bottom 653A. The contact part 653c itself can be used as the rule of the paper rule (CNS) A4; ^ Equipment -------- Order ---- (Please read the precautions on the back before filling this page) # -28-

518916 五、發明說明（26) 接觸梢端，用以接觸另一接觸梢端（例如圖4所示接觸終 端411);或前述梢端結構可架設於腳部653(：上而提供梢 端結構。此種結構也自適應於永久性連結至接觸襯墊（例 如使用焊料或導電環氧樹脂連結）。 圖9A ’ 9B，9C及9 D舉例説明形成本發明之彈性接觸元 件之另一方法。模具（可藉光刻術形成）包括彈性接觸元件 之至少一部份的「負」像。模具9〇1於圖9A顯示爲用於變 形材料903之前，且位於變形材料9〇3之上，變形材料係 設置於包括佈線層906之基材905上。基材9〇5及佈線層 906類似圖6E所示結構。變形材料9〇3可爲多種材料之任 一種，例如PMMA(聚甲基丙烯酸甲酯），其當使用模具或 衝壓機壓迫時可變形，且可用於接受彈簧金屬的沉積而形 成彈性接觸7L件，且隨後可被去除。如圖9 A具體實施例 所示，模具901包括一底部901B及一斜面部9〇1A。須了解 可使用多種其它幾何包括旋轉的「L」字形（例如，）或斜 面其將產生圖2 D之彎曲樑部。 模具901被壓迫入變形材料内部，如圖9 B所示。可能需 要數碎壓力（依據變形材料類型決定）俾變形可變形材料而 達成預疋形狀。一具體實施例中，如此造成底部9〇 幾 乎接觸基材905表面，留下一薄層可變形材料隔開此表面 與底部901B。模具901強迫變形材料變成具有負像形狀的 正像’如圖9B所示。然後模具由基材905及變形材料 903分開，留下圖9 C所示結構。然後此種結構被「清除」 而去除位於底邵901B下方的變形材料薄區9 〇3 A。該結構 -29 - 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公爱） (請先閱讀背面之注意事項再填寫本頁) 裝 經濟部智慧財產局員工消費合作社印制衣 518916 A7 B7 五、發明說明（27 (請先閱讀背面之注意事項再填寫本頁) 可使用各向同性蚀刻清除，該種蚀刻可去除全部已經曝光 的又形材料但不影響基材905。此種蚀刻進行一段足夠去 除王#薄區903A的時間，同時留下大半區域變形材料9〇3 包括斜面部903B。該結構可被清除而以電漿蝕刻或反應 性離子蚀刻或雷射消蝕蚀刻去除薄區9〇3a。去除薄區 903 A後，結構係如圖9 D顯示，且準備用於進一步加工處 理（例如圖5之操作510，512，514及516)而使用經過模製 的變形材料製造彈性接觸元件。 有無數方式可形成模具。模具可藉雷射蝕刻經由表面而 由矽晶圓形成。帶有可光成像材料（可被硬化）的玻璃背襯 基材可連同罩蓋用於藉光刻術界定模具。碳化矽晶圓可使 用放電機製技術於碳化矽晶圓而界定模具。模具的負像可 形成於壤（例如軟石蠟），然後濺鍍短路層於負像表面上， 隨後藉電解鍍敷金屬於蠟上的短路層上而製成模具。 經濟部智慧財產局員工消費合作社印製 則文討論提供有關材料及製成步驟的若干細節。但須了 解本發明可以其它類型材料及製程變化實施。例如，於若 干較佳實施例，濺鍍短路層可使用銅、金、鋁、鈦、鈦/ 鎢或其它適當金屬化。進一步，重新分佈軌線615可使用 銅或金材料來形成轨線。如業界人士 了解，可採用其它材 料來達成類似結果。至於另一替代具體實施例，須了解可 採用其它方法來形成各層。例如，可利用基於無電鍍敷、 化學氣相沉積（C VD )，或物理氣相沉積（p vd )之方法替代 電解鍍敷。 _ 前文説明書中，已經參照某些特定具體實施例説明本發 -30- 本紙張尺度_中國國家標準（CNS)A4規格（210 X 297公爱） 經濟部智慧財產局員工消費合作社印製 518916 A7 _B7 五、發明說明（28 ) 明。但顯然易知，可未悖離如隨附之申請專利範圍陳述之 本發明之廣義範圍及精髓做出多種修改及變化。 -31 - 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） (請先閱讀背面之注意事項再填寫本頁)518916 V. Description of the invention (26) The contact tip is used to contact another contact tip (such as the contact terminal 411 shown in FIG. 4); or the aforementioned tip structure can be mounted on the foot 653 (: to provide the tip structure) This structure is also adapted to be permanently attached to the contact pad (eg, using solder or conductive epoxy). Figures 9A '9B, 9C, and 9D illustrate another method of forming the elastic contact element of the present invention. The mold (which can be formed by photolithography) includes a "negative" image of at least a portion of the elastic contact element. The mold 901 is shown in FIG. 9A before being used for the deforming material 903 and is located above the deforming material 903. The deformed material is disposed on a substrate 905 including a wiring layer 906. The substrate 905 and the wiring layer 906 are similar to the structure shown in FIG. 6E. The deformed material 903 can be any of a variety of materials, such as PMMA (polymethyl Methyl acrylate), which can be deformed when pressed with a mold or a punch, and can be used to accept the deposition of spring metal to form an elastic contact 7L piece, and can be subsequently removed. As shown in the specific embodiment of FIG. 9A, the mold 901 Including a bottom 901B and a Face 901A. It should be understood that a variety of other geometries can be used including rotating "L" shapes (eg,) or bevels which will produce the curved beam portion of Figure 2D. The mold 901 is forced into the interior of the deformed material, as shown in Figure 9B It may take several crushing pressures (depending on the type of deformed material) to deform the deformable material to achieve the pre-shaped shape. In a specific embodiment, this causes the bottom 90 to almost contact the surface of the substrate 905, leaving a thin layer deformable. The material separates this surface from the bottom 901B. The mold 901 forces the deformed material into a positive image with a negative image shape as shown in FIG. 9B. Then the mold is separated by the substrate 905 and the deformed material 903, leaving the structure shown in FIG. 9C. This structure was then "cleared" to remove the thin area of the deformed material below the bottom 901B 903 A. The structure -29-This paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 public love) ( Please read the precautions on the back before filling out this page) Install the printed clothing of the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 518916 A7 B7 V. Invention Description (27 (Please read the precautions on the back before filling out this page) It can be removed using isotropic etching, which can remove all exposed conformal materials without affecting the substrate 905. This etching is performed for a period of time sufficient to remove the King #thin area 903A, while leaving most of the area deformed material 9 〇3 includes the oblique portion 903B. The structure can be removed and the thin area 903a can be removed by plasma etching or reactive ion etching or laser ablation etching. After removing the thin area 903 A, the structure is shown in Figure 9D. And it is ready for further processing (for example, operations 510, 512, 514, and 516 of FIG. 5) to manufacture the elastic contact element using a molded deformed material. There are countless ways to form a mold. The mold can be formed from a silicon wafer through the surface by laser etching. A glass-backed substrate with a photoimageable material that can be hardened can be used in conjunction with a lid to define a mold by photolithography. Silicon carbide wafers can use discharge mechanism technology to define molds on silicon carbide wafers. The negative image of the mold can be formed on the soil (such as soft paraffin), then the short-circuit layer is sputtered on the negative image surface, and then the mold is made by electrolytically plating the metal on the short-circuit layer on the wax. Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs, the article discusses providing some details about the materials and manufacturing steps. However, it must be understood that the present invention can be implemented with other types of materials and process variations. For example, in some preferred embodiments, the sputtering short-circuiting layer may be copper, gold, aluminum, titanium, titanium / tungsten, or other suitable metallization. Further, the redistribution trajectory 615 may use copper or gold materials to form the trajectory. As the industry understands, other materials can be used to achieve similar results. As for another alternative embodiment, it should be understood that other methods may be used to form the layers. For example, electroless plating may be replaced by a method based on electroless plating, chemical vapor deposition (C VD), or physical vapor deposition (p vd). _ In the foregoing description, the present invention has been described with reference to certain specific embodiments. -30- This paper size _ Chinese National Standard (CNS) A4 size (210 X 297 public love) Printed by the Intellectual Property Bureau of the Ministry of Economic Affairs Consumer Cooperatives 518916 A7 _B7 V. Description of Invention (28). However, it is obvious that various modifications and changes can be made without departing from the broad scope and essence of the present invention as stated in the accompanying patent application scope. -31-This paper size is applicable to China National Standard (CNS) A4 (210 X 297 mm) (Please read the precautions on the back before filling this page)

Claims (1)

518916 A8 B8 C8 D8 六、申請專利範圍 1. 一種於一互連總成的接觸元件，包含： 一底部適應於附著於一基材； (請先閱讀背面之注意事項再填寫本頁) 一樑部連結至底部且由該底部伸出，該樑部形狀實 質上爲三角形且適應於自行豎立。 2. 如申請專利範圍第1項之接觸元件，其中該接觸元件之 樑部自適應於具有彈性，及該樑部之厚度實質上係小於 跨該樑部上表面之橫向維度。 3. 如申請專利範圍第1項之接觸元件，其中該接觸元件進 一步包含： 一第一層爲導電性；以及 一第二層其爲機械彈性。 4. 如申請專利範圍第1項之接觸元件，其中該樑部相對於 基材表面係以一斜角由該底邵伸出。 5. 如申請專利範圍第1項之接觸元件，其中該底部及該樑 部係藉蚀刻術形成。 6. 如申請專利範圍第1項之接觸元件，其中該樑部爲細長 且有彈性，以及其中該基材包含一積體電路於一半導體 材料。 7. 如申請專利範圍第1項之接觸元件，進一步包含： 經濟部智慧財產局員工消費合作社印製 一梢端部連結至該樑部。 8. 如申請專利範圍第7項之接觸元件，其中該梢端部係與 操邵一體成形。 9. 如申請專利範圍第8項之接觸元件，其中該底部及該樑 部係一體成形。 -32- 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 經濟部智慧財產局員工消費合作社印製 518916 C8 ---------D8 —____ 六、申請專利範圍 1〇.=請專利範圍第1項之接觸元件，其中該互連總成造 一步包含複數接觸元件，各自具有： 一各別底部適應於黏著於基材； 、各別樑郅連結至各別底部且由底部伸出，該各別 樑郅形狀實質爲三角形且適應於自行豎立；以及 其中複數接觸元件之數毗鄰者於基材上之間隔節距 係於約2 · 5至2000微米之範圍。 11·如申請專利範圍第丨〇項之接觸元件，其中該節距係小 於約5 0 〇微米。 12·如申請專利範圍第1 0項之接觸元件，其中該基材包含 一積體電路於一半導體材料。 。 13·如申請專利範圍第！項之接觸元件，其中該樑部相對於 基材表面係以一斜角由底部末端伸出，以及其中該底部 係平行該表面。 14·如申請專利範圍第i項之接觸元件，進一步包含： 一梢端結構其係製造成與僚部隔開及其係架設於樑 部上。 15· —種形成一接觸元件之方法，該方法包含： 形成一底部而黏著於一電氣總成之基材； 形成一樑部連結至該底部，該樑部係由該底部伸出 且形狀實質爲三角形以及適應於自行賢立。 16·如申請專利範園第1 5項之方法，其中該樑部爲彈性且 細長。 17.如申请專利範圍第1 6項之方法，其中該底部及該樑部 -33- 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 裝--------訂--------- (請先閱讀背面之注意事項再填寫本頁) 518916518916 A8 B8 C8 D8 6. Scope of patent application 1. A contact element in an interconnect assembly, including: a bottom adapted to be attached to a substrate; (please read the precautions on the back before filling this page) a beam The part is connected to the bottom part and protrudes from the bottom part. The shape of the beam part is substantially triangular and adapted to erect on its own. 2. For a contact element according to item 1 of the patent application scope, wherein the beam portion of the contact element is adaptively elastic, and the thickness of the beam portion is substantially smaller than the transverse dimension across the upper surface of the beam portion. 3. The contact element according to item 1 of the patent application scope, wherein the contact element further comprises: a first layer which is conductive; and a second layer which is mechanically elastic. 4. For the contact element according to item 1 of the patent application scope, wherein the beam portion protrudes from the base at an oblique angle with respect to the surface of the substrate. 5. The contact element according to item 1 of the application, wherein the bottom portion and the beam portion are formed by etching. 6. The contact element according to item 1 of the patent application scope, wherein the beam portion is slender and elastic, and wherein the substrate includes an integrated circuit in a semiconductor material. 7. If the contact element in the scope of patent application No. 1 further includes: Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs, a tip end is connected to the beam part. 8. For the contact element according to item 7 of the patent application, wherein the tip end is integrally formed with the handle. 9. For a contact element according to item 8 of the patent application, wherein the bottom portion and the beam portion are integrally formed. -32- This paper size is in accordance with China National Standard (CNS) A4 (210 X 297 mm) Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 518916 C8 --------- D8 —____ VI. Patent Application Scope 1〇. = Please contact elements in the first scope of the patent, wherein the interconnection assembly is made up of a plurality of contact elements, each having: a respective bottom adapted to adhere to the substrate; and a respective beam connected to each The bottom of the beam is projected from the bottom, and the shape of each beam is substantially triangular and suitable for self-erecting; and the interval pitch of the adjacent ones of the plurality of contact elements on the substrate is about 2.5 to 2000 microns. range. 11. The contact element as claimed in claim 1, wherein the pitch is less than about 500 microns. 12. The contact element as claimed in claim 10, wherein the substrate comprises an integrated circuit in a semiconductor material. . 13 · If the scope of patent application is the first! The contact element of claim, wherein the beam portion protrudes from the bottom end at an oblique angle with respect to the substrate surface, and wherein the bottom portion is parallel to the surface. 14. The contact element according to item i of the patent application scope, further comprising: a tip structure which is manufactured to be separated from the ministry and is erected on the beam. 15 · A method of forming a contact element, the method comprising: forming a bottom portion adhered to a base material of an electric assembly; forming a beam portion connected to the bottom portion, the beam portion protruding from the bottom portion and having a substantially shape It is triangular and adapted to stand on its own. 16. The method according to item 15 of the patent application park, wherein the beam portion is elastic and slender. 17. The method according to item 16 of the scope of patent application, in which the bottom and the beam portion -33- This paper size is applicable to China National Standard (CNS) A4 specifications (210 X 297 mm) Packing ------- -Order --------- (Please read the notes on the back before filling this page) 518916 申請專利範圍 經濟部智慧財產局員工消費合作社印製 係藉蚀刻術形成。 18. 如申請專利範圍第17項之方法’其中該底部及該樑部 係於一次操作一體成形。 19. 如申請專利範圍第丨7項之方法，其中該底部及該樑 係藉下述方式形成： 施加一第一罩蓋層； 形成一第一開口與第一罩蓋層，該第一開口具有— 第區及第一區，该第一區包含一傾斜壁； 沉積一種導電材料於該第—開口内部。 20. 如申請專利範圍第1 9項之方法，進一步包含： 、於形成弟一開口後施加一第二罩苔芦· 形成-第二開口於該第二軍蓋層，該 定實質三角形形狀。 贷、界 21. 如申請專利範圍第20項之方法，纟 括含：. ^ 通過第二開口鍍敷導電材料於第一開口。 22. 如申請專利範圍第19項之方法，其中沉積於第一區的 導電材料形成底部，而沉積於第二區的導電材料形成浐 部，以及樑部係以相對於基材表面夹角—斜角由底部一 端伸出。 23· —種接觸元件於一互連總成中，包含： 一底部適應於黏著於一基材； 一樑部連結至該底部互由該底部伸出，該樑部適應 於自行豎立且具有樑部幾何其當偏轉時食質上可均勻分 /W. -----------------^^衣--------訂---------線· C請先閱讀背面之注音？事項再填寫本頁} 34- 518916 經濟部智慧財產局員工消費合作社印製 A8 B8 C8 D8 _ 、申請專利範圍 布應力遍佈全樑。 24.如申請專利範圍第2 3項之接觸元件，其中該接觸元件 之樑部自適應於具有彈性，及該樑部之厚度實質上係小 於跨該樑部上表面之橫向維度。 25·如申請專利範圍第2 3項之接觸元件，其中該接觸元件 進一步包含： 一第一層爲導電性；以及 一第二層其爲機械彈性。 26·如申請專利範圍第2 3項之接觸元件，其中該樑部係以 相對於基材表面夾角一斜角由該底部伸出，以及該樑部 具有實質爲三角形形狀。 27·如申請專利範圍第2 3項之接觸元件，其中該底部及該 樑部係藉蚀刻術形成。 28·如申請專利範園第23項之接觸元件，其中該樑部爲細 長且有彈性，以及其中該基材包含一積體電路於一半導 體材料。 29·如申請專利範圍第2 3項之接觸元件，進一步包含： 一梢端部連結至該樑部。 m如申請專利範圍第29項之接觸元件，其中該梢端部係 與樑部一體成形。 31. 如申請專利範圍第3〇項之接觸元件，其中該底部及該 樑郅係一體成形。 32. 如：請專利範圍第23項之接觸元件，其中該互連總成 進步包含複數接觸元件，各自具有： (請先閱讀背面之注意事項再填寫本頁) |裝 ----訂----- •35- 518916 A8 B8 C8 D8 <、申請專利範圍 一各別底部適應於黏著於基材； f請先閱讀背面之注意事項再填寫本頁) 一各別樑邵連結至各別底部且由底部伸出，該各別 樑部形狀實質爲三角形且適應於自行豎立；以及 其中複數接觸元件之數毗鄰者於基材上之間隔節距 係於约2.5至2000微米之範圍。 33·如申請專利範圍第3 2項之接觸元件，其中該節距係小 於約5 0 0微米。 34·如申請專利範圍第3 2項之接觸元件，其中該基材包含 一積體電路於一半導體材料。 35·如申請專利範圍第2 3項之接觸元件，其中該樑部相對 於基材表面係以一斜角由底部末端伸出，以及其中該底 部係平行該表面。 36·如申請專利範圍第2 3項之接觸元件，進一步包含： 一梢端結構其係製造成與僚部隔開及其係架設於樑 部上。 37· —種形成一接觸元件之方法，該方法包含： 形成一底部黏著於一電氣總成之基材； 經濟部智慧財產局員工消費合作社印製 形成一樑部連結至該底部，該樑部係由底部伸出1 適應於自行豎立，以及具有樑部幾何其當偏轉時可實質 均勻分布應力遍佈樑部之上。 38. 如申请專利範圍第3 7項之方法，其中該樑部爲彈性且 細長且具有實質爲三角形形狀。 39. 如申请專利範圍第3 8項之方法，其中該底部及該樑部 係藉蝕刻術形成。 -36- 本紙張尺度適用中國國家標準（CNS)A4規格（21〇 χ 297公釐） 518916 經濟部智慧財產局員工消費合作社印製 A8 B8 C8 D8 六、申請專利範圍 40·如申請專利範圍第39項之方法，其中該底部及該樑部 係於一次操作一體成形。 41.如申4專利範圍第3 9項之方法，其中該底部及該樑部 係藉下述方式形成： 施加一第一罩蓋層； 形成一第一開口與第一罩蓋層，該第一開口具有一 第一區及一第二區，該第二區包含一傾斜壁； 沉積一種導電材料於該第一開口内部。 42·如申請專利範圍第4 1項之方法，進一步包含： 於形成第一開口後施加一第二罩蓋層； 形成一第二開口於該第二罩蓋層，該第二開口係界 定實質三角形形狀。 43·如申請專利範圍第4 2項之方法，其中沉積導電材料包 栝含： 通過第二開口鍍敷導電材料於第一開口。 44·如申請專利範圍第4 1項之方法，其中沉積於第一區的 導電材料形成底部，而沉積於第二區的導電材料形成樑 邛，以及樑邵係以相對於基材表面夾角一斜角由底部〆 端伸出。 / 45· 一種於一互連總成之接觸元件，包含： 一底部適應於黏著於一基材； -樑部連結至該底部且由夸部伸出，讀棣部適巋於 自行堅立，以及其中該樑部幾何係設計成對 尺寸約束以&對該接觸元件之預定彈菁常識^產:實質 ---1---------裝--------訂--------- C請先閱讀背面之注音？事項再填寫本頁} -37 518916 8888 ABCD 經濟部智慧財產局員工消費合作社印製 六、申請專利範圍 上最理想化的應力參數。 46.如申請專利範圍第45項之接觸元件，纟Μ㈣ 之樑部適應於具㈣f樑部之厚度實質上係 跨該樑部上表面之橫向維度。 ； 47·如申請專利範圍第4 5項之垃縮 、 不 貝又接觸70件，其中該接觸元件 進一步包含： 一第一層爲導電性；以及 弟一層其爲機械彈性。 48. 如申請專利範圍第45項之接觸元件，其中該揉部係以 相對於基材表面夾角—斜角由該底部伸出，以 具有實質爲三角形形狀。 "衣碍 49. 如申請專利範圍第45項之接觸元件，其中該接觸 爲彈性，及其中該底部及該樑部係以蝕刻術分開形成， 以及其中該幾何係經選擇而於具有實質恒定截面積縣 臂樑上獲得改良的性能。 、心 50·如申請專利範圍第45項之接觸元件，其中該樑部爲細 長且有彈性，以及其中該基材包含一積體電路於一=: 體材料。 、千導 51·如申請專利範圍第4 5項之接觸元件，進一步包含： 一梢端部連結至該樑部。 52·如申請專利範圍第5丨項之接觸元件，其中該梢端 與樑部一體成形。 " 53.如申請專利範圍第5 2項之接觸元件，其中該底部及令 樑部係一體成形。 —。舔 -38 - 本紙張尺度適用中國國家標準（CNS)A4規格⑵Q χ 297公爱 il·---------•裝--------訂---------^9— c請先閱讀背面之注意事項再填寫本頁) 518916 經濟部智慧財產局員工消費合作社印製 A8 B8 C8 D8 六、申請專利範圍 54. 如申請專利範園第4 5項之接觸元件，其中該互連總成 進步包含複數接觸元件，各自具有： 一各別底部適應於黏著於基材； 一各別樑部連結至各別底部且由底部伸出，該各別 樑部形狀實質爲三角形且適應於自行豎立；以及 其中複數接觸元件之數毗鄰者於基材上之間隔節距 係於約2.5至2000微米之範圍。 55. 如申請專利範圍第54項之接觸元件，丨中該節距係小 於約5 0 0微米。 56_如申請專利範圍第54項之接觸元件，其中該基材包含 一積體電路於一半導體材料。 57.如申請專利範圍第45項之接觸元件，其中該樑部 於基材表面係以-斜角由底以”卜 部係平行該表面。 升Τ邊辰 58·如申請專利範圍第45項之接觸元件，進 本· 一梢端結構其係製造成盥僚 " 部上。 、僚4隔開及其係架設於樑 59. —種形成一彈性接觸元件之士 〜万法，該方法包本： 形成一底部附著於一電氣總成之基材，。· 形成一樑部連結至該底部，該 適應於自行豎立，且具有樑部 '由屐郅伸出且 預定尺寸約束以及彈性接觸元件二；：二於：定之樑部 生實質上最理想化的應力參數〜。、’、疋平簧常數時可產 60·如申請專利範圍第5 9頊之士、+ 万法，其中該樑部爲彈性且 本紙張尺度適用中國國家標準（CNS)A4規格 (請先閱讀背面之注音？事項再填寫本頁} 裝--------訂------ 經濟部智慧財產局員工消費合作社印製 518916 C8 --—_ 六、申請專利範圍 細長且具有實質爲三角形形狀。 61.如申請專利範圍第60項之方法，其中該底部及該樑部 係藉蝕刻術分開形成，以及其中該樑部幾何係逑定爲可 於具有實質恒定截面積的懸臂樑上提供改良的性能。 设如申請專利範圍第60項之方法，其中該底部及該樑部 係於一次操作一體成形。 63.如申請專利範圍第6丨項之方法，其中該底部及該樑部 係藉下述方式形成： 施加一第一罩蓋層； 形成一第一開口與第一罩蓋層，該第一開口具有— 第一區及一第二區，該第二區包含一傾斜壁； 沉積一種導電材料於該第一開口内部。 64·如申請專利範園第6 3項之方法，進一步包含： 於形成第一開口後施加一第二罩蓋層； 形成一第二開口於該第二罩蓋層，該第二開口係界 定實質三角形形狀。 65.如申請專利範圍第6 4項之方法，其中沉積導電材料包 括含： 通過第二開口鍍敷導電材料於第一開口。 66·如申請專利範圍第6 3項之方法，其中沉積於第一區的 導電材料形成底部，而沉積於第二區的導電材料形成樑 4 ’以及操部係以相對於基材表面夾角一斜角由底部〆 端伸出。 67. —種互連總成，包含： -40 - 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） ^--------t--------- (請先閱讀背面之注意事項再填寫本頁) 518916 A8 B8 C8 D8 六 部 申請專利範圍 一基材； 一接觸元件設置於該基材上，該接觸元件之第 ， 伤適應於自行賢立，且進一步適應於‘施力至接觸元件 的第一部份時由第一位置移動至第二位置；以及 一制止結構設置於該接觸元件之第二部份上，該制 止結構係界定該第二位置。 68. 如申請專利範圍第6 7項之互連總成，其中複數接觸元 件係設置於基材上，該等接觸元件係以約2 · 5微米至 2000微米範圍之節距設置。 69. 如申請專利範圍第6 7項之互連總成，其中該基材具有 一接線襯墊連結至一微電子裝置，該接觸元件係設置於 该接線槪塾上。 70·如申請專利範園第6 7項之互連總成，其中該基材具有 一重新分佈導體連結至一微電子裝置，該接觸元件係設 置於該重新分佈導體上。 71·如申請專利範圍第67項之互連總成，其中該基材具有 γ接觸襯墊連結至一測試設備，該接觸元件係設置於該 接線襯塾上。 72. 如申請專利範圍第67項之互連總成，其中該接觸元件 具有彈性，以及其中該制止結構係於施力於第一部份時 以該力壓迫牴住第二部份。 73. 如申請專利範圍第67項之互導總成，丨中該接觸元件 包含至少一金屬層。 74. 如申請專利範圍第6 7項之互遠始Λ *丄、， 只心旦運總成，其中該接觸元件 -41 - 本紙張尺度適用中國國豕標準（CNS)A4規格（210 X 297公爱 ^--------^---------^9— (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 Μ 8916 -----^六、申請專利範圍 經濟部智慧財產局員工消費合作社印製 二1-罘一金屬層及一第二金屬層，該第一金屬層對該:道兀件提供彈性’以及該第二金屬層對該接觸元件提 供導電性。 75· t申明專利範園第6 7項之互連總成，其中該接觸元件 爲一細長彈性接觸元件。 76·如：：專利範圍第67項之互連總成，其中該接觸元件 Μ第、4伤相對於基材表面爲傾斜，因此該接觸元件之 ^ 刀之‘係位在向於基材表面之高度。 • 4 :叫專利範圍第6 7項之互連總成，其中該接觸元件 之第一部份之一部份係由制止結構表面凸起某個高度。 爪如申請專利範圍第77項之互連總成，其中該接觸元件 由制止結構表面凸起之高度爲預定高度。 79·:申請專利範圍第67項之互連總成，其中該基材包含 、積恤％路於半導體材料，以及當另一接觸元件係於該 接觸元件做機械及電接觸時施力。 肌，申請專利範圍第67項之互連總成，其中該接觸元件 A 一彈性接觸元件，以及其中該臂係於另一接觸元件調 整至與該接觸元件做機械及電接觸時施力，以及其中該 力較長彈性接觸元件由第一位置彎折至第二位置，以及 其中該制止結構界定該第二位置，及界定彈性接觸元件 的最大彎折。 81·如^請專利範圍第6 7項之互，總成，其中該接觸元件 又第一部份具有實質爲三角形形狀，以及該接觸元件之 第三部份爲該三角形的一點。 -42- 本紙張尺度適用中國國家標準（CNSM4規格（21G X 297公羞） (請先閱讀背面之注意事項再填寫本頁) 裝---- 訂---- 參 518916 8888 ABCD 經濟部智慧財產局員工消費合作社印製 六、申請專利範圍 82·如申請專利範圍第67項之互連總成，其中該制止結構 具有垂直高度係小於統計學上可能存在的最短接觸元件 的垂直高度。 83· —種形成一互連總成之方法，該方法包含·· 設置一接觸元件於一基材上，該接觸元件之第—部 伤了自行豆立且於施力至该接觸元件之第一部份時可由 一第一位置移動至第二位置；以及 設置一制止結構於該接觸元件之第二部份上，該制 止結構界定該第二位置。 84·如申請專利範圍第8 3項之方法，其中設置該接觸元件 於該基材上包括以矽爲節距設置另一接觸元件於該基材 上。 85·如申请專利範圍第8 3項之方法，其中該接觸元件爲自 行豎立且具有彈性。 86·如申請專利範園第8 3項之方法，其中設置該接觸元件 進一步包含·· 施加一第一罩蓋層於該基材上； 於該第一罩蓋層形成一開口伸展入第一罩蓋層内 部，該開口具有錐狀壁；以及 沉積一金屬層於該第一罩蓋層之開口的錐狀壁上。 87.如申請專利範園第8 6項之方法，其中該錐狀壁係使用 下列至少一種技術變尖：使用_漸進灰階變尖，使用再流 動變尖，使用控制曝光變尖，使用改變軍蓋距離變尖或 藉多次曝光變尖。 -43- 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） ------------裝--------訂--------- c請先閱讀背面之注咅？事項再填寫本頁) 別916Scope of patent application Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs, formed by etching. 18. The method according to item 17 of the scope of patent application, wherein the bottom portion and the beam portion are integrally formed in one operation. 19. The method according to item 7 of the patent application, wherein the bottom and the beam are formed by: applying a first cover layer; forming a first opening and a first cover layer, the first opening The first region includes a first region and a first region. The first region includes an inclined wall. A conductive material is deposited inside the first opening. 20. The method according to item 19 of the scope of patent application, further comprising: applying a second moss after forming an opening of the brother. Forming-the second opening is in the second military cover layer, and the shape is substantially triangular. Credits and circles 21. The method of applying for item 20 of the patent scope includes: ^ plating a conductive material through the second opening to the first opening. 22. The method of claim 19, wherein the conductive material deposited in the first region forms a bottom, the conductive material deposited in the second region forms a crotch, and the beam portion is at an angle relative to the surface of the substrate— The bevel angle protrudes from the bottom end. 23 · —A contact element in an interconnection assembly includes: a bottom portion adapted to be adhered to a base material; a beam portion connected to the bottom portion and extending from the bottom portion, the beam portion adapted to erect by itself and has a beam The geometry can be divided evenly on the food quality when deflected. ----------------- ^^ 衣 -------- Order ------ --- Line · C Please read the Zhuyin on the back first? Please fill in this page again for the matter} 34- 518916 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs A8 B8 C8 D8 _, patent application scope The distribution stress is all over the beam. 24. The contact element according to item 23 of the scope of patent application, wherein the beam portion of the contact element is adaptive to have elasticity, and the thickness of the beam portion is substantially smaller than the lateral dimension across the upper surface of the beam portion. 25. The contact element according to item 23 of the patent application scope, wherein the contact element further comprises: a first layer which is electrically conductive; and a second layer which is mechanically elastic. 26. The contact element according to item 23 of the scope of patent application, wherein the beam portion protrudes from the bottom portion at an oblique angle relative to the surface of the substrate, and the beam portion has a substantially triangular shape. 27. The contact element according to item 23 of the patent application scope, wherein the bottom portion and the beam portion are formed by etching. 28. The contact element according to item 23 of the patent application park, wherein the beam portion is thin and elastic, and wherein the substrate includes an integrated circuit in half of a conductive material. 29. The contact element according to item 23 of the patent application scope, further comprising: a tip end portion connected to the beam portion. m The contact element according to item 29 of the application, wherein the tip end portion is integrally formed with the beam portion. 31. The contact element according to item 30 of the patent application, wherein the bottom and the beam are integrally formed. 32. For example, please contact elements in the scope of the patent No. 23, wherein the interconnection assembly progress includes a plurality of contact elements, each of which has: (Please read the precautions on the back before filling out this page) | ---- • 35- 518916 A8 B8 C8 D8 < Applicable patent scope-each bottom is adapted to adhere to the substrate; f, please read the precautions on the back before filling this page) a separate Liang Shao link to each The bottom part extends from the bottom part, the shape of the respective beam part is substantially triangular and is suitable for self-erecting; and the interval pitch of the adjacent ones of the plurality of contact elements on the substrate is in the range of about 2.5 to 2000 microns. 33. The contact element according to item 32 of the application, wherein the pitch is less than about 500 microns. 34. The contact element of claim 32, wherein the substrate comprises an integrated circuit in a semiconductor material. 35. The contact element according to item 23 of the application, wherein the beam portion protrudes from the bottom end at an oblique angle with respect to the surface of the substrate, and wherein the bottom portion is parallel to the surface. 36. The contact element according to item 23 of the scope of patent application, further comprising: a tip structure which is manufactured to be separated from the ministry and is fastened on the beam. 37 · —A method for forming a contact element, the method comprising: forming a base material adhered to an electrical assembly at the bottom; printed by the consumer cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs, forming a beam portion connected to the bottom, the beam portion It protrudes from the bottom 1 to adapt to self-erecting, and has a beam section geometry that can distribute stress substantially uniformly over the beam section when deflected. 38. The method according to item 37 of the scope of patent application, wherein the beam portion is elastic and slender and has a substantially triangular shape. 39. The method of claim 38, wherein the bottom portion and the beam portion are formed by etching. -36- This paper size applies to China National Standard (CNS) A4 (21 × 297 mm) 518916 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs A8 B8 C8 D8 VI. Patent Application Scope 40. The method of item 39, wherein the bottom portion and the beam portion are integrally formed in one operation. 41. The method according to item 39 of the patent scope of claim 4, wherein the bottom portion and the beam portion are formed by: applying a first cover layer; forming a first opening and a first cover layer, the first An opening has a first region and a second region. The second region includes an inclined wall. A conductive material is deposited inside the first opening. 42. The method according to item 41 of the scope of patent application, further comprising: applying a second cover layer after forming the first opening; forming a second opening on the second cover layer, the second opening defining a substance Triangle shape. 43. The method according to item 42 of the patent application range, wherein depositing the conductive material package includes: plating the conductive material on the first opening through the second opening. 44. The method according to item 41 of the scope of patent application, wherein the conductive material deposited in the first region forms a bottom, and the conductive material deposited in the second region forms a beam, and the Liang Shao system is formed at an angle relative to the surface of the substrate. The oblique angle protrudes from the base end. / 45 · A contact element in an interconnection assembly, comprising: a bottom adapted to adhere to a substrate;-a beam portion is connected to the bottom and protrudes from a boast, and the reading portion is adapted to stand on its own, And where the beam geometry is designed to constrain the dimensions with & the pre-determined elasticity of the contact element. Order --------- C Please read the Zhuyin on the back first? Please fill out this page again for matters} -37 518916 8888 ABCD Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs VI. The optimal stress parameters in the scope of patent application. 46. As for the contact element in the scope of application for item 45, the beam portion of the MEMS beam is adapted to have a thickness of the beam portion which substantially spans the lateral dimension of the upper surface of the beam portion. 47. If the scope of the patent application is 45, 70 pieces are contacted, and the contact element further includes: a first layer is conductive; and a first layer is mechanical elasticity. 48. The contact element according to item 45 of the patent application, wherein the kneading portion protrudes from the bottom portion at an angle-bevel to the surface of the substrate so as to have a substantially triangular shape. " Early obstacles 49. For example, the contact element of the scope of patent application No. 45, wherein the contact is elastic, and wherein the bottom and the beam portion are formed separately by etching, and wherein the geometry is selected to have a substantially constant Improved performance on cross-section county beams. 50. The contact element according to item 45 of the scope of patent application, wherein the beam portion is thin and elastic, and wherein the substrate includes an integrated circuit in a =: body material. Thousands of guides 51. The contact element according to item 45 of the patent application scope, further comprising: a tip end portion connected to the beam portion. 52. The contact element according to item 5 of the patent application scope, wherein the tip end is integrally formed with the beam portion. " 53. The contact element according to item 52 of the patent application scope, wherein the bottom portion and the beam portion are integrally formed. —. Lick-38-This paper size applies to China National Standard (CNS) A4 specifications ⑵Q χ 297 public love il · --------- • installation -------- order ------- -^ 9— c Please read the notes on the back before filling this page) 518916 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs A8 B8 C8 D8 VI. Application scope 54. For example, if you apply for Patent Park No. 4 5 A contact element, wherein the interconnect assembly progress includes a plurality of contact elements, each having: a respective bottom adapted to adhere to a substrate; a respective beam portion connected to and protruding from the bottom, the respective beam portion The shape is substantially triangular and suitable for self-erecting; and the interval pitch of the adjacent ones of the plurality of contact elements on the substrate is in the range of about 2.5 to 2000 microns. 55. As for the contact element of the scope of application for patent No. 54, the pitch is smaller than about 500 microns. 56_ The contact element according to item 54 of the application, wherein the substrate comprises an integrated circuit in a semiconductor material. 57. The contact element according to item 45 of the scope of patent application, wherein the beam portion is parallel to the surface at an oblique angle from the bottom to the surface of the substrate. The edge portion 58. The contact element is designed into a tip structure, which is made into a pedestal. The pedestal 4 is separated and its system is erected on the beam 59. A kind of person who forms an elastic contact element ~ Wanfa, this method includes This: Forms a base attached to an electrical assembly at the bottom, · Forms a beam portion connected to the bottom, which is adapted to stand on its own, and has a beam portion 'protruded from a ridge with predetermined size constraints and elastic contact elements Two ;: Two in: The most idealized stress parameter of Ding Zhibei Sheng ~. ,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,, · The number of patent applications in the scope of patent application 5 Department is flexible and this paper size applies Chinese National Standard (CNS) A4 specifications (Please read the phonetic on the back? Matters before filling out this page} Installation -------- Order ------ Intellectual Property of the Ministry of Economic Affairs Printed by the Bureau's Consumer Cooperatives 518916 C8 ---_ VI. Patent Application The circumference is slender and has a substantially triangular shape. 61. The method of claim 60, wherein the bottom portion and the beam portion are formed separately by etching, and wherein the beam portion geometry is determined to be substantially constant. The cantilever beam with a cross-sectional area provides improved performance. The method according to item 60 of the patent application, wherein the bottom and the beam portion are integrally formed in one operation. 63. The method according to item 6 丨, where The bottom portion and the beam portion are formed by: applying a first cover layer; forming a first opening and a first cover layer, the first opening having a first area and a second area, the first The second area includes an inclined wall; a conductive material is deposited inside the first opening. 64. The method according to item 63 of the patent application park, further comprising: applying a second cover layer after forming the first opening; forming A second opening is in the second cover layer, and the second opening defines a substantially triangular shape. 65. The method according to item 64 of the patent application scope, wherein depositing the conductive material includes: A conductive material is plated on the first opening. 66. The method according to item 63 of the patent application scope, wherein the conductive material deposited on the first area forms a bottom, and the conductive material deposited on the second area forms a beam 4 'and the The parts are protruded from the bottom end at an oblique angle relative to the surface of the substrate. 67.-An interconnect assembly, including: -40-This paper size applies to China National Standard (CNS) A4 (210 X 297 male) ^) ^ -------- t --------- (Please read the notes on the back before filling in this page) 518916 A8 B8 C8 D8 Six patent application scopes a substrate; a contact element It is arranged on the base material, the contact element is adapted to stand on its own, and is further adapted to be moved from the first position to the second position when a force is applied to the first part of the contact element; and a stop structure It is disposed on the second part of the contact element, and the stop structure defines the second position. 68. If the interconnection assembly of item 67 of the patent application range, wherein a plurality of contact elements are arranged on the substrate, the contact elements are arranged at a pitch ranging from about 2.5 micrometers to 2000 micrometers. 69. For example, the interconnection assembly of claim 67, wherein the substrate has a wiring pad connected to a microelectronic device, and the contact element is disposed on the wiring pad. 70. The interconnection assembly of claim 67, wherein the substrate has a redistribution conductor connected to a microelectronic device, and the contact element is disposed on the redistribution conductor. 71. The interconnection assembly of claim 67, wherein the substrate has a gamma contact pad connected to a test device, and the contact element is disposed on the wiring liner. 72. For example, the interconnection assembly of the patent application No. 67, wherein the contact element is elastic, and wherein the restraint structure is pressed against the second part with the force when a force is applied to the first part. 73. If the transconductance assembly according to item 67 of the patent application, wherein the contact element includes at least one metal layer. 74. If the application scope of the patent No. 67 is far apart, only the contact element -41-This paper size is applicable to China National Standard (CNS) A4 (210 X 297) Gongai ^ -------- ^ --------- ^ 9— (Please read the notes on the back before filling out this page) Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs M 8916- ---- ^ VI. Patent application scope. The Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs printed two 1-one metal layers and one second metal layer. The first metal layer provides flexibility to the: The second metal layer provides conductivity to the contact element. 75 · t declares that the interconnection assembly of Item 67 of the patent range, wherein the contact element is an elongated elastic contact element. 76 · Example: Item 67 of the patent scope The interconnection assembly, in which the contact elements M and 4 are inclined relative to the surface of the substrate, so the contact element's blade is positioned at a height toward the substrate surface. 67. The interconnection assembly of item 7, wherein a part of the first part of the contact element is raised by a surface of the stop structure. Height. For example, the interconnection assembly of the patent application scope item 77, wherein the height of the contact element protruding from the surface of the stop structure is a predetermined height. 79 ·: The interconnection assembly of the patent application scope item 67, wherein the base The material contains, relies on semiconductor materials, and exerts force when another contact element is attached to the contact element for mechanical and electrical contact. Muscle, the interconnect assembly for the patent application No. 67, where the contact element A An elastic contact element, and wherein the arm is applied to force when the other contact element is adjusted to make mechanical and electrical contact with the contact element, and wherein the elastic contact element with a longer force is bent from the first position to the second position, And the stop structure defines the second position, and defines the maximum bending of the elastic contact element. 81. If the patent claims No. 67 and the mutual assembly, the first part of the contact element has substantially The triangle shape, and the third part of the contact element is a point of the triangle. -42- This paper size applies to the Chinese national standard (CNSM4 specification (21G X 297)) (Please read the (Please fill in this page if you want to pay attention to matters) Packing ---- Order ---- See 518916 8888 ABCD Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 6. Application for patent scope 82. Interconnection assembly if item 67 of the patent scope is applied for The stop structure has a vertical height that is less than the vertical height of the shortest possible contact element that may exist statistically. 83. A method of forming an interconnection assembly, the method includes: placing a contact element on a substrate , The first part of the contact element hurts itself and can be moved from a first position to a second position when a force is applied to the first part of the contact element; and a stop structure is provided on the second of the contact element In part, the stop structure defines the second position. 84. The method of claim 83, wherein disposing the contact element on the substrate includes disposing another contact element on the substrate with silicon as a pitch. 85. The method of claim 83, wherein the contact element is self-standing and has elasticity. 86. The method according to item 83 of the patent application park, wherein setting the contact element further comprises: applying a first cover layer on the substrate; forming an opening in the first cover layer to extend into the first Inside the cover layer, the opening has a tapered wall; and a metal layer is deposited on the tapered wall of the opening of the first cover layer. 87. The method according to item 86 of the patent application park, wherein the tapered wall is sharpened using at least one of the following techniques: use _ progressive grayscale sharpening, use reflow sharpening, control exposure sharpening, use change The distance of the military cover is sharpened or by multiple exposures. -43- This paper size is applicable to China National Standard (CNS) A4 (210 X 297 mm) ------------ Installation -------- Order ------ --- c Please read the note on the back first? Matters need to be filled out on this page) Don't 916 /、、申請專利範圍 88·如申請專利範園第8 6項之方法，其中於形成錐狀壁 後’該方法進一步包含： (請先閱讀背面之注意事項再填寫本頁) 置放一罩蓋圖樣於該第一罩蓋層上，該罩蓋圖樣具 有—種實質爲三角形形狀的圖樣；以及 根據罩蓋圖樣以實質三角形形狀沉積金屬層於第_ 罩蓋層之開口。 89·如申請專利範圍第8 6項之方法，其中沉積金屬層包括 使用濺鍍沉積法、電鍍沉積法、化學氣相沉積法以及無 電鍍敷法之任一種方法。 •如申清專利範圍第8 6項之方法’其中沉積金屬層包 括： 沉積一第一金屬層，該第一金屬層係選用其彈性性 質；以及 沉積一第二金屬層，該第二金屬層係選擇其導電性 質。 91·如申請專利範園第8 6項之方法，進一步包含·· 去除部份第一罩蓋層俾允許接觸元件自行暨立；以 及 經濟部智慧財產局員工消費合作社印製 施加一額外層而覆蓋接觸元件之第二部份。 92.如申請專利範園第9 1項之方法，進一步包含： 平面化第一罩蓋層而形成制止結構，該制止結構具 有垂直高度係小於存在的最短，觸元件的垂直高度。 93·如申請專利範園第8 6項之方法，進一步包含： 去除第一罩蓋層； -44 - 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 經濟部智慧財產局員工消費合作社印製 518916 C8 ——— —__ D8 ^--------:^^ ______ 六、申請專利範圍 施加一第二層於接觸元件之第二部份上，以及允許 接觸元件之第一部份可自行豎立。 94·如申請專利範園第9 3項之方法，進一步包含： 平面化第二層形成該制止結構，該制止結構具有垂 直鬲度係小於最短接觸元件之垂直高度。 95.如申請專利範園第83項之方法，其中該接觸元件爲可 自行豎立的彈性接觸元件，及其中當另一接觸元件調整 至與该接觸元件做機械及電接觸時施力，及其中亏力迭 成彈性接觸元件由第一位置彎折至第二位置，以及其中 琢制止結構界定第二位置而界定彈性接觸元件的最大彎 折0 96·如申請專利範圍第83項之方法，其中該接觸元件爲可 自行豎立的彈性接觸元件，及其中該制止結構係於施力 於第一部份時以該力壓迫牴住第二部份，以及其中該力 係於另一接觸元件被調整至於該接觸元件做機械及電接 觸時施力。 97· —種電氣系統，包含： 一弟一基材具有一第一接觸元件； 一第二基材； 至少一第二接觸元件係設置於第二基材上，該第二 接觸元件之第一部份適應於自行豎立，以及進一步適應 於當藉第一接觸元件施力於第_二接觸元件之第一部份時 由第一位置移動至第二位置；以及 一制止結構設置於第二接觸元件之第二部份上，該 -45- 本纸張尺度適用中國國家標準（CNS)A4規格(210x 297公釐） 裝--------訂--------- (請先閱讀背面之注意事項再填寫本頁) 518916/ 、、 Scope of patent application 88. If the method of applying for patent No. 86 in the patent application park, after forming a conical wall, the method further includes: (Please read the precautions on the back before filling this page) Place a cover A cover pattern is on the first cover layer, the cover pattern has a substantially triangular shape pattern; and a metal layer is deposited on the opening of the first cover layer in a substantially triangular shape according to the cover pattern. 89. The method of claim 86, wherein depositing a metal layer includes any one of a sputtering deposition method, an electroplating deposition method, a chemical vapor deposition method, and an electroless plating method. • The method of claim 86 of the patent scope, wherein depositing a metal layer includes: depositing a first metal layer, the first metal layer is selected from its elastic properties; and depositing a second metal layer, the second metal layer It is selected for its conductive properties. 91. If the method of applying for patent item No. 86 of the patent, further includes: removing part of the first cover layer, allowing the contact element to stand on its own; and printing and applying an additional layer by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. Cover the second part of the contact element. 92. The method according to item 91 of the patent application park, further comprising: planarizing the first cover layer to form a stop structure, the stop structure having a vertical height smaller than the shortest existing vertical height of the contact element. 93. The method according to item 86 of the patent application park, further comprising: removing the first cover layer; -44-This paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) Intellectual property of the Ministry of Economic Affairs Printed by the Bureau ’s Consumer Cooperatives 518916 C8 ——— —__ D8 ^ --------: ^^ ______ VI. Apply for a patent to apply a second layer on the second part of the contact element, and allow contact The first part of the component can stand on its own. 94. The method according to item 93 of the patent application park, further comprising: planarizing the second layer to form the stop structure, the stop structure having a verticality less than the vertical height of the shortest contact element. 95. The method according to item 83 of the patent application park, wherein the contact element is a self-standing elastic contact element, and a force is applied when another contact element is adjusted to make mechanical and electrical contact with the contact element, and The deflection of the elastic contact element is bent from the first position to the second position, and the maximum bending of the elastic contact element is defined by the stop structure defining the second position. 96. Such as the method of claim 83 in the scope of patent application, where The contact element is an elastic contact element which can stand on its own, and the restraining structure is used to press and hold the second part with the force when the force is applied to the first part, and the force is adjusted to the other contact element. As for the contact element, the force is applied when making mechanical and electrical contact. 97 · —An electrical system including: a substrate having a first contact element; a second substrate; at least one second contact element is disposed on the second substrate, the first of the second contact element Part is adapted to stand on its own, and further adapted to move from the first position to the second position when the first contact element exerts a force on the first part of the second contact element; and a stop structure is provided at the second contact On the second part of the component, the -45- this paper size applies to the Chinese National Standard (CNS) A4 specification (210x 297 mm). -------- Order --------- (Please read the notes on the back before filling this page) 518916 制止結構界定該第二位置。 98.如申4專利範圍〶9 7嗔之電氣系統，纟中該第二基材 具有-接線襯墊連結至—微電子裝置，該第二接觸元件 <第一邵份係設置於接線襯墊上，以及該第一基材爲下 列任一者：（1)測試探針總成具有第一接觸元件接觸第 二接觸元件’·以及（2)—封裝體具有第_接觸元件於微 電子裝置使用期間罩住該微電子裝置。 99·—種形成一自行豎立的細長彈性接觸元件之方法，該方 法包含： 將一杈具壓迫至變形材料内部，該模具決定該自行 豎立的細長彈性接觸元件之至少一部份的形狀； 於該彈性材料上形成該自行豎立的細長彈性接觸元 件之至少該部份。 100·如申請專利範圍第9 9項之方法，其中該成形步驟包含 於變形材料已經使用模具變形之後沉積一種導電材二 於該變形材料上。 101·如申請專利範圍第i 00項之方法，其中該模具包含多 種形狀用以對應自行豎立的細長彈性接觸元件之多部 份。 0 經濟部智慧財產局員工消費合作社印製 102·如申請專利範圍第1 〇丨項之方法，進一步包含： 於沉積導電材料後去除變形材料。 103.如申請專利範圍第102項之方法，其中該自行賢立的 細長彈性元件係設置於一基材上的對應電互連襯墊 上。 1 -46- 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 518916 A8 B8 C8 D8The stop structure defines the second position. 98. The electrical system of claim 4 patent scope 〶 97, wherein the second substrate has-a wiring pad connected to-a microelectronic device, and the second contact element < the first component is provided on the wiring lining The pad and the first substrate are any of the following: (1) the test probe assembly has a first contact element contacting a second contact element; and (2) the package has a first contact element in the microelectronics The microelectronic device is covered during use of the device. 99. A method of forming a self-standing elongated elastic contact element, the method comprising: pressing a branch into the deformed material, the mold determining the shape of at least a part of the self-standing elongated elastic contact element; and The elastic material forms at least the portion of the self-standing elongated elastic contact element. 100. The method of claim 99, wherein the forming step includes depositing a conductive material on the deformed material after the deformed material has been deformed using a mold. 101. The method according to item i 00 of the patent application range, wherein the mold includes a plurality of shapes corresponding to a plurality of parts of the elongated elastic contact element which stands by itself. 0 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 102. If the method of applying for the scope of patent application No. 10, further includes: removing the deformed material after depositing the conductive material. 103. The method of claim 102, wherein the self-standing elongated elastic element is disposed on a corresponding electrical interconnection pad on a substrate. 1 -46- This paper size applies to Chinese National Standard (CNS) A4 (210 X 297 mm) 518916 A8 B8 C8 D8 申請專利範圍 104·如申請專利範圍第！ 〇3項之方法，其中該基材包含一 半導體積體電路。 " 105· -種蚀刻界定形成的彈性接觸元件，|有一彎曲的极 邵係由一基材向上方向伸展其係藉蝕刻術界定。 106·如申請專利範圍第i 〇 5項之蝕刻術界定形成的彈性接 觸元件，進一步包含： 一底邵以機械方式附著於該基材且電氣_合至該基 材上之一電互連終端，以及其中該彈性接觸元件於初步 形成後釋放時可自行豎立。 107.如申凊專利範圍第1 〇 6項之蚀刻術界定形成的彈性接 觸元件，其中該彎曲樑部之區度係由基材向上方向伸 展，及該曲度係藉保護性層的彎曲斜面以蝕刻術界 定，該保護性層被去除而釋放彈性接觸元件。 108·如申請專利範圍第i 〇 6項之蝕刻術界定形成的彈性接 觸元件，進一步包含一保護性層其係界定彎曲樑部之 曲度。 ------------裝--------訂---------^9. (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 •47 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐）Patent application scope 104 · If the patent application scope is the first! The method of item 03, wherein the substrate comprises a semiconductor integrated circuit. " 105 ·-an elastic contact element formed by etching, | a curved pole is defined by a substrate extending upward and it is defined by etching. 106. The elastic contact element formed as defined by the etch technique of item i 05 of the scope of patent application, further comprising: a substrate mechanically attached to the substrate and electrically coupled to an electrical interconnection terminal on the substrate , And where the elastic contact element can be erected by itself when released after initial formation. 107. The elastic contact element formed by the etching technique as defined in claim 106 of the patent scope, wherein the area of the curved beam portion is extended from the base material in the upward direction, and the curvature is the curved slope of the protective layer Defined by etching, this protective layer is removed to release the elastic contact element. 108. For example, the elastic contact element formed by the etching process defined in item 106 of the patent application scope further includes a protective layer which defines the curvature of the curved beam portion. ------------ Installation -------- Order --------- ^ 9. (Please read the precautions on the back before filling this page) Wisdom of the Ministry of Economic Affairs Printed by the Consumers' Cooperative of the Property Bureau • 47 This paper size applies to China National Standard (CNS) A4 (210 X 297 mm)
TW089115236A 1999-07-30 2000-08-18 An contact element in an interconnect assemblies and a method for forming the same TW518916B (en)

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