TW512419B - Method and article for filling apertures in a high performance electronic substrate - Google Patents
Method and article for filling apertures in a high performance electronic substrate Download PDFInfo
- Publication number
- TW512419B TW512419B TW090132813A TW90132813A TW512419B TW 512419 B TW512419 B TW 512419B TW 090132813 A TW090132813 A TW 090132813A TW 90132813 A TW90132813 A TW 90132813A TW 512419 B TW512419 B TW 512419B
- Authority
- TW
- Taiwan
- Prior art keywords
- substrate
- mask
- scope
- layer
- filling material
- Prior art date
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 46
- 238000000034 method Methods 0.000 title claims abstract description 44
- 239000000463 material Substances 0.000 claims abstract description 62
- 239000004065 semiconductor Substances 0.000 claims abstract description 4
- 239000011148 porous material Substances 0.000 claims description 29
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 10
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 8
- 229910052802 copper Inorganic materials 0.000 claims description 8
- 239000010949 copper Substances 0.000 claims description 8
- 239000003822 epoxy resin Substances 0.000 claims description 8
- 239000002245 particle Substances 0.000 claims description 8
- 229920000647 polyepoxide Polymers 0.000 claims description 8
- 239000004642 Polyimide Substances 0.000 claims description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 239000011888 foil Substances 0.000 claims description 6
- 239000011521 glass Substances 0.000 claims description 6
- 229920001721 polyimide Polymers 0.000 claims description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 5
- 229910052799 carbon Inorganic materials 0.000 claims description 5
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 4
- 238000004891 communication Methods 0.000 claims description 4
- 239000007788 liquid Substances 0.000 claims description 4
- 229910052750 molybdenum Inorganic materials 0.000 claims description 4
- 239000011733 molybdenum Substances 0.000 claims description 4
- 229910052759 nickel Inorganic materials 0.000 claims description 4
- 229910052709 silver Inorganic materials 0.000 claims description 4
- 239000004332 silver Substances 0.000 claims description 4
- 230000001052 transient effect Effects 0.000 claims description 4
- 239000004593 Epoxy Substances 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical class C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 claims description 3
- XLJMAIOERFSOGZ-UHFFFAOYSA-M cyanate Chemical compound [O-]C#N XLJMAIOERFSOGZ-UHFFFAOYSA-M 0.000 claims description 3
- 229910003460 diamond Inorganic materials 0.000 claims description 3
- 239000010432 diamond Substances 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 239000010931 gold Substances 0.000 claims description 3
- 238000001459 lithography Methods 0.000 claims description 3
- 229920001643 poly(ether ketone) Polymers 0.000 claims description 3
- 239000000843 powder Substances 0.000 claims description 3
- 235000012239 silicon dioxide Nutrition 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- 239000007787 solid Substances 0.000 claims description 3
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 claims description 2
- 239000011889 copper foil Substances 0.000 claims description 2
- 150000001913 cyanates Chemical class 0.000 claims description 2
- 230000000149 penetrating effect Effects 0.000 claims description 2
- 229920002492 poly(sulfone) Polymers 0.000 claims description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims 3
- 229910052797 bismuth Inorganic materials 0.000 claims 3
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims 3
- 229920006254 polymer film Polymers 0.000 claims 3
- HGUFODBRKLSHSI-UHFFFAOYSA-N 2,3,7,8-tetrachloro-dibenzo-p-dioxin Chemical compound O1C2=CC(Cl)=C(Cl)C=C2OC2=C1C=C(Cl)C(Cl)=C2 HGUFODBRKLSHSI-UHFFFAOYSA-N 0.000 claims 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims 2
- 229910000831 Steel Inorganic materials 0.000 claims 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims 2
- 239000004643 cyanate ester Substances 0.000 claims 2
- 238000000151 deposition Methods 0.000 claims 2
- 229910052757 nitrogen Inorganic materials 0.000 claims 2
- 229910052697 platinum Inorganic materials 0.000 claims 2
- 239000010959 steel Substances 0.000 claims 2
- 229910052718 tin Inorganic materials 0.000 claims 2
- 239000011800 void material Substances 0.000 claims 2
- XQUPVDVFXZDTLT-UHFFFAOYSA-N 1-[4-[[4-(2,5-dioxopyrrol-1-yl)phenyl]methyl]phenyl]pyrrole-2,5-dione Chemical compound O=C1C=CC(=O)N1C(C=C1)=CC=C1CC1=CC=C(N2C(C=CC2=O)=O)C=C1 XQUPVDVFXZDTLT-UHFFFAOYSA-N 0.000 claims 1
- 235000014676 Phragmites communis Nutrition 0.000 claims 1
- NEIHULKJZQTQKJ-UHFFFAOYSA-N [Cu].[Ag] Chemical compound [Cu].[Ag] NEIHULKJZQTQKJ-UHFFFAOYSA-N 0.000 claims 1
- 150000001412 amines Chemical class 0.000 claims 1
- CCXYPVYRAOXCHB-UHFFFAOYSA-N bismuth silver Chemical compound [Ag].[Bi] CCXYPVYRAOXCHB-UHFFFAOYSA-N 0.000 claims 1
- 230000000739 chaotic effect Effects 0.000 claims 1
- 150000001875 compounds Chemical class 0.000 claims 1
- XZSPDZZPOWEABC-UHFFFAOYSA-N cyanide Chemical compound N#[C-].N#[C-] XZSPDZZPOWEABC-UHFFFAOYSA-N 0.000 claims 1
- 239000000428 dust Substances 0.000 claims 1
- 239000000945 filler Substances 0.000 claims 1
- 150000002466 imines Chemical class 0.000 claims 1
- AHADSRNLHOHMQK-UHFFFAOYSA-N methylidenecopper Chemical compound [Cu].[C] AHADSRNLHOHMQK-UHFFFAOYSA-N 0.000 claims 1
- -1 nitride nitride Chemical class 0.000 claims 1
- 150000004767 nitrides Chemical class 0.000 claims 1
- 229910052763 palladium Inorganic materials 0.000 claims 1
- 229920003192 poly(bis maleimide) Polymers 0.000 claims 1
- 229920000768 polyamine Polymers 0.000 claims 1
- 229920002098 polyfluorene Polymers 0.000 claims 1
- 239000004814 polyurethane Substances 0.000 claims 1
- 229920002635 polyurethane Polymers 0.000 claims 1
- 229920005989 resin Polymers 0.000 claims 1
- 239000011347 resin Substances 0.000 claims 1
- 239000004575 stone Substances 0.000 claims 1
- 239000011135 tin Substances 0.000 claims 1
- 235000021419 vinegar Nutrition 0.000 claims 1
- 239000000052 vinegar Substances 0.000 claims 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims 1
- 229910000679 solder Inorganic materials 0.000 description 23
- 238000005516 engineering process Methods 0.000 description 8
- 230000035515 penetration Effects 0.000 description 3
- 239000002861 polymer material Substances 0.000 description 3
- 239000002904 solvent Substances 0.000 description 3
- 238000009825 accumulation Methods 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 238000005553 drilling Methods 0.000 description 2
- 238000005562 fading Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000003672 processing method Methods 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- GSJBKPNSLRKRNR-UHFFFAOYSA-N $l^{2}-stannanylidenetin Chemical compound [Sn].[Sn] GSJBKPNSLRKRNR-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910052582 BN Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- XFXPMWWXUTWYJX-UHFFFAOYSA-N Cyanide Chemical compound N#[C-] XFXPMWWXUTWYJX-UHFFFAOYSA-N 0.000 description 1
- 241000274582 Pycnanthus angolensis Species 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- 229920002313 fluoropolymer Polymers 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 239000011087 paperboard Substances 0.000 description 1
- KAVGMUDTWQVPDF-UHFFFAOYSA-N perflubutane Chemical class FC(F)(F)C(F)(F)C(F)(F)C(F)(F)F KAVGMUDTWQVPDF-UHFFFAOYSA-N 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229920002577 polybenzoxazole Polymers 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000002787 reinforcement Effects 0.000 description 1
- 238000007761 roller coating Methods 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 238000012216 screening Methods 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 150000003918 triazines Chemical class 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
- H01L21/486—Via connections through the substrate with or without pins
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49866—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers characterised by the materials
- H01L23/49883—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers characterised by the materials the conductive materials containing organic materials or pastes, e.g. for thick films
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/0094—Filling or covering plated through-holes or blind plated vias, e.g. for masking or for mechanical reinforcement
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/40—Forming printed elements for providing electric connections to or between printed circuits
- H05K3/4038—Through-connections; Vertical interconnect access [VIA] connections
- H05K3/4053—Through-connections; Vertical interconnect access [VIA] connections by thick-film techniques
- H05K3/4069—Through-connections; Vertical interconnect access [VIA] connections by thick-film techniques for via connections in organic insulating substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/03—Conductive materials
- H05K2201/0332—Structure of the conductor
- H05K2201/0335—Layered conductors or foils
- H05K2201/0347—Overplating, e.g. for reinforcing conductors or bumps; Plating over filled vias
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/09—Shape and layout
- H05K2201/09209—Shape and layout details of conductors
- H05K2201/095—Conductive through-holes or vias
- H05K2201/0959—Plated through-holes or plated blind vias filled with insulating material
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/01—Tools for processing; Objects used during processing
- H05K2203/0147—Carriers and holders
- H05K2203/0152—Temporary metallic carrier, e.g. for transferring material
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/01—Tools for processing; Objects used during processing
- H05K2203/0147—Carriers and holders
- H05K2203/0156—Temporary polymeric carrier or foil, e.g. for processing or transferring
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/02—Details related to mechanical or acoustic processing, e.g. drilling, punching, cutting, using ultrasound
- H05K2203/0278—Flat pressure, e.g. for connecting terminals with anisotropic conductive adhesive
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/03—Metal processing
- H05K2203/0338—Transferring metal or conductive material other than a circuit pattern, e.g. bump, solder, printed component
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/05—Patterning and lithography; Masks; Details of resist
- H05K2203/0548—Masks
- H05K2203/0554—Metal used as mask for etching vias, e.g. by laser ablation
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/14—Related to the order of processing steps
- H05K2203/1461—Applying or finishing the circuit pattern after another process, e.g. after filling of vias with conductive paste, after making printed resistors
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/46—Manufacturing multilayer circuits
- H05K3/4602—Manufacturing multilayer circuits characterized by a special circuit board as base or central core whereon additional circuit layers are built or additional circuit boards are laminated
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Ceramic Engineering (AREA)
- Printing Elements For Providing Electric Connections Between Printed Circuits (AREA)
- Non-Metallic Protective Coatings For Printed Circuits (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Manufacturing Of Printed Wiring (AREA)
Description
512419 A7 B7 五、發明説明（ 發明背景 發明領域 一本發明蓋有關於半導體製程，且更特別是關於用以填滿 鬲效能電子基材内之孔隙的方法與結構。 相關技藝 在電路板建構作業裡，例如像是陶瓷模組之模組的焊球 連接’可提供相較傳統切針插孔技術確為顯著的電子效 ^優勢。腳針插孔技術㈣到利㈣插進相對應板孔内之 突頭或針腳，以將各式模組接附至電路板。 裝 因機械性考量之故’腳針插孔連接方^佔據可觀的電路 板表面面帛’從而阻礙到進—步微小化。相對地，焊球技 術可制模組上的焊球將各模組接附利路板，而該等焊 球係接連到電路板表面上的相對應接觸點。 線 詳細地說，&模、组背側置設有一高炫點焊5求，且該焊球 係藉-㈣點焊膏回流處理而接㈣該模組。接著，会夢 一筛選、低鞋焊膏將該模组接附到電路板表面。由= 模組焊於電路板上的接附作業僅係對該電路板表面，因此 ’可降低該接附作業板鑽孔直徑以及淨空著區大小，如是 提供較大的接線面積。切信號網路長度縮短因此焊= 連接可提供強化系統速度的優點’而因為減少通道及板直 徑，故亦可提供經增加的接線容量的優點。 然而’當對傳統式穿透孔或通道來進行悍球連接時，焊 球連接技術就會出現問題。當嘗試這種連接時，被用來連 接焊球到電路板的經篩選之低溫炫化谭膏，就會在回流處 本紙張尺度適用中國國家標準(CNS) A4規格(210X 297公釐） -4- A7 B7
理過程中，經由該孔洞而流離於所.欲互接位置。這會導致 不良且無可信賴的焊點。其中一種欲將模組直接地接附到 平板型板内之通道處的嘗試，就是在進行焊球接附作業之 前，預先以焊質填滿該通透孔洞以產生一焊接面。不過， 經由該孔洞而推落的焊質，會在電路板的組裝過程中離出 該互連處。而焊質下拉或Γ虹吸」會在該焊球下方造成空孔 ，而這又會導致碎裂而產生劣性、無可信賴的焊點結果。 這個經由孔洞而焊球連接問題的另一種解決方法是，利 用 狗月頭」型式的終端，在此一銅箔板會取代該電鍍 層穿透孔或通道。在銅箱板上製作出的焊點將由電路線連 接到孔洞或穿透孔。這種狗骨頭型式的終端雖可提供極佳 的焊點’但此法會消弱另由平板焊球連接技術之通道所另 獲侍的優點，因為如此將會降低可接線性並增加信號線路 的長度。同時，電路線路會佔據電路板表面上的空間或「基 地」。 亦試圖以某些聚合物材料來填滿該等通道及穿透孔，不 過k種聚合物材料會不完全地填滿該等通道，並從而產生 空孔。而因須經溶劑乾化之故，這些聚合物材料也會要求 几長的處理日寸間。@當釋放出溶劑後，這些聚合物材料也 曰傾向於收縮，如此造成非平面性表面及額外的空孔。 故最好疋可提供一種能夠直接在穿透孔處的製作焊球連 接藉以耗用較少基地，縮短信號線路長度並提高可接線 陡，而又展現出令人滿意的焊點結果為佳。 發明概要 發明説明（ 本發明第-通用觀點在於可提供一種方法，供以填滿至 少-基材内孔隙’丨中包含：提供基材，該者具有頂部 表面及—底部表面；該基材具有至少—孔隙，該孔隙從該 頂部表面貫通至該底部表面；提供具有一第一層的填入結 構，—填入材料位於該第一層上面，以及一遮罩位於該填 入材料上面，而該遮罩具有至少一個貫通的開孔；將該填 入結構置放在该基材的頂部表面上；及強迫該填入材料通 過該填入結構之遮罩内的至少一開孔，進入到該基材内的 至少一孔隙。 本發明第二通用觀點在於可提供一種方法，供以構成一 用來填入一基材内至少一孔隙的結構，其中包含：提供一 第-層，將-填入材料沉積於該第一層上面；以及在該填 入材料上面形成一遮罩。 本發明第三通用觀點在於可提供一種結構，供以填入半 導體基材内至少—孔隙’其中包含：—第一層；一位於該 第一層上之填入材料層；以及一位於該層填入材料上面之 遮罩。 本發明前揭及其他特點可由後載本發明具體實施例之詳 細叾兄明而得深入瞭解。 圖式之簡單說明 見將蒼酌於後列圖式以詳細說明本發明具體實施例，在 此相同編號標示代表類似元件，而其中·· 圖1描述一根據本發明之載體結構； 圖2描述如圖1之載體結構，其中具有一根據本發明之羯
512419 A7 B7 五、發明説明 模層； 圖3描述如圖2之載體結構，此係根據本發明在該箔模層 内構成出一遮罩之後； 圖4描述如圖3之載體結構，此係根據本發明經配接於一 基材； 圖5描述如圖4之載體結構及基材，此係根據本發明經填 入該基材内的孔隙之後； 圖6描述如圖5之基材，此係根據本發明在移除該載體結 構之後； 圖7描述如圖6之基材，此係根據本發明在平面化處理之 後；以及 圖8描述如圖7之基材，此係根據本發明其上具有一接線 層及一絕緣層。 較佳具體實施例之詳細說明 在此雖將詳細說明本發明數款具體實施例，然應瞭解確 :對其等進行各種變化及修改，而無虞料後載中請專利 範圍之範圍。本發明範圍並不受限於組成元件的數量、其 材質、其外型、其相對排置方式等等。隨附圖式雖係為詮 釋本u u等圖式並不必然按其比例所繪製。 …V固’具τ圖卜3顯示—可用以填入即如晶片案 :、電路板等之基材内各孔隙或通道的載體結構10建構方 式]寸別是’…顯示一可犧牲第一層12,其上具 的填入材料14。該可犧牲第一層12 柄虛田4 U 5喇荆泊、鋁、其他德 材料，或是另為非金屬性者，像是聚亞胺'聚洽
層丨2具有約為ο 5-5.0 mil範圍内 物薄膜等。該可犧牲第 的厚度。 該填入材料14是由有機材料所組成，像是環氧基樹脂 (epoxy)、氰酸鹽sMcyanate ester)、雙馬來亞胺 (MSmaleimide)、氰酸鹽s旨環氧基樹脂（^⑽批ester_ep〇xy) 、聚亞胺（polymnde)、苯并環丁稀加贿㈤相⑶叫、聚 石風（polysulfones)類、聚醚酮（p〇lyetherket〇nes)及彼等組合 。該填入材料14也可含有熱導性或電導性粒子，像是二氧 化矽、三氧化二鋁、氮化鋁、氮化矽、碳化矽、氮化硼、 鑽石粉、玻璃、銀、金、銳、錫Ή、瞬變液態粒子 、經鍍銀之銅質、經鍍銀之實體玻璃球、經鍍銀之中空玻 璃球 '碳、鎳、鉬及鉬等分布其中。該填人材料Η也可含 有如Kuiesza等人所著且經受讓予職公司之美國專㈣ M〇6,89l號所述材料，兹將該文以提示方式併人本文。這 個具有約為0.5-5.0 mil範圍厚度的填人材料14，是利用滚 輪塗佈技術、絲網印刷技術或其他傳統處理方法來沉積在 該可犧牲第-層12之上。特別是，該填人材料"，會被加 熱到約為⑶-㈣範圍内的溫度’以移除任何該填入材料 Μ所使用的溶劑（此者是在塗佈處理t所加入輔助者），將該 填入材料u部分地前移’藉此液化該填入材料i4，支 者可接附到該可犧牲第一層12。 。人 即如圖2所示，可利用一種轉換型態技術，像是滾動薄化 '真W化 '熱輪薄化⑽W ’將該落質層16沉積於該填 入材科14之上。會按低溫及低|方式來執行該沉理， 312419 五、發明説明（6 ) 该荡質層16會被沉 该箔質層16含有銅 藉此避免讓該填入材料丨4變形或移·位 f貝而具有約為0.25-2.0 mil範圍的厚度 質或其他類用運用的材料。 即如圖3所示，孔洞或開口 18會構成在㈣内而構 成一遮罩19 °、可利用傳統的微影㈣減㈣刻方法或其他 類似處理方式’來構成出該箔質層16内的開口 18 “亥開口 18會曝出部分的填人材料14，並對應到構成於例如I片幵載 體、電路板等基材22内各孔隙或通道2〇,像是電鍍層穿透 孔，之约略大小及位置（如圖4所示）。f亥基材22可含有依昭 高溫樹脂的呢4環氧基樹脂及薄片，像是高溫環氧基樹脂 、聚亞胺（polynmde)、氰酸鹽（cyanates)類（三氮歸）、聚氟 化物（flu〇ropolymers)、陶瓷填入之聚氟化物、笨并環丁烯 (benzocyclobutenes)、全氟丁烷（perflu〇r〇butanes)、聚乙基 硫化物（PolyPhenylenesulflde)、聚鐵（p〇iysiUf〇nes)、聚醚 ^ 胺（Polyethenmides)、聚 g迷 g同（p〇lyetherket〇nes)、聚苯基喹 ^ ^ (Polyphenylqumoxalmes)、聚苯並嗔唑 (p〇iybenz〇xazoles)以及聚苯基苯並雙噻唑（P〇lyphenyl benZ〇blSthiaZ〇les)與彼等組合等等。該箱質層16内的開口 18 是利用傳統電路製作技術所製成，即如微影蝕刻或其他方 法。例如，.可藉由傳統上供以製作印刷電路板或晶片載體 之鑽馨、敲擊或雷射技術來構成各孔隙2〇。 即如圖4所示，將該載體結構1〇反置並予安放在該基材^ 的表面上，使得該遮罩19會與該基材22接觸。即如圖示， 該遮罩19内的開口 18並不需要完美地對齊，或具有與該基 -9- 512419 A7 B7 五、發明説明（7 ) 材22内孔隙20精確相同的維度。只要該遮罩1 9内的開口 1 8 可提供接取到在該基材22内的該填入材料14與該孔隙20之 間約20-80%相通，即可適當地填入該孔隙20 (詳如後文所 述）。 約150-700 psi範圍的壓力，及約80-200。(：範圍的溫度， 即如120-130QC，據此施用約20-90分鐘，以強迫該填入材 料14流經該遮罩19内的開口 1 8，並進入該基材22内的孔隙 20，且將移流進入該孔隙20内的填入材料14加以癒平（如圖 5)。接著，利用褪脫技術，將該可犧牲第一層丨2、遮罩i 9 及任何殘餘其間的填入材料14移除而離於該基材22的表面 ，而此技術會對該孔隙20内的填入材料14施加一剪力。在 褪脫過程中，位於該遮罩19的開口 1 8中且附著於該可犧牲 第一層12處的填入材料14，將會從位在該基材22表面上的 焊結點24所剝離（如圖6)。然後，利用磨滑、機械性擦磨、 CMP (化學機械性拋光）等方式將該基材22的表面平面化， 俾以移除各焊結點24，即如圖7所示。 之後，利用傳統式電鍍技術，將如銅質之導體材料層鍍 覆於該基材22的表面上（如圖8)。這可於該填充孔隙2〇上構 成出一覆帽層。接著，將該導體層26樣式化以構成一接線 層26供以電性連接。然後，將一絕緣介電層或介電積聚層 28平覆於該接線層26之上。該介電積聚層28可供以堆疊出 額外的電路層。 本务明雖係併同於前載之特定具體實施例所描述，然對 於，、、、。曰本項技藝之人士而言，各種替代、修改及變化方式 -10-
512419 A7 B7 五、發明説明（8 ) 確屬顯而易見。因之，如前文所列之本發明具體實施例具 示範性，而非為以限制者。可著手進行各種變化，而無虞 悖離後述申請專利範圍所設定之發明精神與範圍。 -11 - 本紙張尺度適用中國國家標準(CNS) A4規格(210X 297公釐)
Claims (1)
- 512419 A8 B8 C8 D8 申請專利範園 1. 2. 3. 4. 5. 一種填滿至少一基材内一孔隙之方法，其中包A . 提供一基材，該者具有頂部表面及一底 該有至少-孔隙’該孔隙從該頂部“貫通到 有—第一層的填入結構，-填入材料位於該第 ^^以及—遮罩位於該填人材料上面，而該遮罩 具有至少一個貫通開孔； 將該填入結構置放在該基材的頂部表面上，·及 強迫該填入材料通過該填入結構之遮罩内的至少一 孔，進入到該基材内的至少一孔隙内。 汗 如申請專利範圍第丨項之方法， 穿透孔。 f至^孔隙為電鍍層 如申请專利範圍第1項之方法 牲載體結構。 如申請專利範圍第1項之方法 :’使得該遮罩内至少一開口可約略對準内 的至少一孔隙。 如申請專利範圍第1 @ 項之方法，其中進一步包含從該基材 貝口P表面上移除該殖入社播 /、八、、^構，隨後強迫該填入材料通過 q、入構中遮罩的開σ進人該基材内的至少—孔隙内。 2請專利_第5項之方法，其中從該基材移除該埴入 、-•。構，更包含從該基材的J頁部表面剝離該第一層 填入材料及遮罩。 ’、d 如申請專利範圍第5項之方法，其中從該基材頂部表面移 其中該填入結構係一可犧 其中進一步包含對齊該填 -12- 、申請專利範圍 除該填入結構，之後為將該基材頂部表面整平 如申請專利範圍第旧之方法，其中該第一層包各 出的材料：銅箱、銘、聚亞胺及聚合物薄膜。 範圍第1項之方法’其中該填入材料包含從如 :、、且斤造出的材料：環氧基樹脂、氰酸鹽_、 亞胺、氰酸鹽S旨環氧基樹脂、聚胺化物、苯并環 聚颯類、聚醚酮及彼等組合。 〈、、 10.如申請專利範圍第9項之方法’其中該填入材料進一牛 ^從如下群組所選出的粒子：二氧切、三氧化二二 乳化銘、亂化石夕、碳化石夕、氮化石朋、鑽石粉、破璃、 金、&、錫、叙、勤、瞬變液態粒子、經鑛銀 銅貝、經鑛銀之實龍璃球、經鑛銀之中空玻璃球 、鎳、鉬及鉑等。 1 1.如申請專利範圍第1項之方法 層。 12·如申請專利範圍第丨丨項之方法 13. 如申請專利範圍第1項之方法， 來構成該遮罩内的開口。 14. 如申請專利範圍第1項之方法， 该填入材料的一通路。 15. 如申請專利範圍第1項之方法，……的開口對 於該基材内的孔隙’以提’該填入材料與孔隙之間至 2〇~8〇%相通。 16·如申請專利範圍第1項之方法，其中該遮罩具有約㈣ 8. 9. 包 鋼 之 碳 其中該遮罩包含 箔 其中该箔膜層含有銅質c 其中係利用微影蝕刻處天 其中該遮罩内的開口構月 其中該遮罩内的開口對| 本紙張尺度咖中目@家鮮(CNS) A4規格㈣X297公 '13- 512419 A BCD 六、申請專利範園 mil範圍内的厚度。 17· ·如申請專利範圍第丨項之方法，.其中強迫該填入材料進入 一開孔，進一步包含對該結構及該基材施加/約 1)0 700 psilc圍的壓力，及約8〇_2〇〇π範圍的溫度。 18. —種構成一用來填入至少一基材内一孔隙之一結構之方 法，其中包含： 提供一第一層； 將一填入材料沉積於該第一層上面；以及 在該填入材料上面構成出一遮罩。 層穿透孔。 20.如申請專利範圍第18項之方法，其中該第一層包含從如 :群組所選出的材料：鋼羯、鋁、多元聚亞胺及聚合物 薄膜。 2L如中請專利範圍第18項之方法，其中該填人材料包 如下群組所選出的材料：環氧基樹脂、氰酸鹽黯 來亞胺、氰酸鹽醋環氧基樹脂、聚亞胺、笨并環丁 ：·: 水/5風類、聚鱗g同及彼等組合。 22.如申請專利《以項之方法，其中該填人材料進 包含從如下群組所選出的粒子：二氧化矽 ^ 、氮化紹、氮切、碳切、氮㈣'鑽石粉 ^呂 銅、銀、金、鈀、錫、鉍 双’、 物鉍〜、鉛、瞬變液態粒子、細 之銅質、經鍍銀之實體玻璁抄 、二鍍銀 貝虹圾螭球、經鍍銀之中空 碳、鎳、鉬及鉑等。 碉球、 • 14- 本纸張尺度適财@ g家辟(CNS) Α4·(21()χ 297/gy A8 B8 C8 T--------- D8 六、申請專利範圍 '---- 23·如中請專利範圍第18項之方法，其中在該填人材料上構 成一遮罩進一步包含： 在該填入材料上沉積一羯膜層；以及 在該箔膜層内構成出至少一開口。 从如申請專利範圍第23項之方法，其中在該開口至少部分 地對齊於該基材内的孔隙。 2).如申明專利圍第23項之方法，其中該開口對齊於該基 材内的孔陽：，以提供該填入材料與孔隙之間至少Μ,% 相通。 6.如申明專利範圍第23項之方法，其中該遮罩具有約 0-25—2 mil範圍内的厚度。 27. —種用來填入至少一半導體基材内一孔隙之結構，i 包含： 一第一層； 一填入材料層位於該第一層上面；以及 一遮罩位於該填入材料層上面。 28·如申請專利範圍第27項之結構，其中該第一層包含從如 下群組所選出的材料：銅箔、鋁、聚亞胺及聚合物薄膜。 29. 如申請專利範圍第27項之結構，其中該填入材料包含從 如下群組所選出的材料：環氧基樹脂、氰酸鹽酯、雙馬 來亞胺、氰酸鹽酯環氧基樹脂、聚亞胺、苯并環丁烯、 聚砜類、聚醚酮及彼等組合。 30. 如申請專利範圍第29項之結構，其中該填入材料進一步 包含從如下群組所選出的粒子：二氧化矽、三氧化二链 -15- 本紙張尺度適用中國國家標準(CNS) A4規格(210X 297公釐) 六、申請專利範圍 .銅、銀 之銅質 碳、鎳 '破續、 、鉍鍍銀 破螭球、 把錫、鉍、鉛、瞬變液態粒_ 經錢銀之實體破璃球、經鐘銀之中$ 翻及翻等。 儿如申請專利範圍第27項之結構，其中該遮罩進 在該開口至少部分地對齊於該基材内的孔隙。' 32.如申請專利範圍第27項之結構，其中該開口對齊於該基 材内的孔隙，以提供該填入材料與孔隙之間至 _ 80%相通。 33.如申請專利範圍第27項之結構，其中該遮罩具有約〇 μ -2 mil範圍内的厚度。 -16· 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US09/764,047 US6429527B1 (en) | 2001-01-17 | 2001-01-17 | Method and article for filling apertures in a high performance electronic substrate |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW512419B true TW512419B (en) | 2002-12-01 |
Family
ID=25069543
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW090132813A TW512419B (en) | 2001-01-17 | 2001-12-28 | Method and article for filling apertures in a high performance electronic substrate |
Country Status (3)
| Country | Link |
|---|---|
| US (2) | US6429527B1 (zh) |
| JP (1) | JP4157705B2 (zh) |
| TW (1) | TW512419B (zh) |
Families Citing this family (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7147141B2 (en) * | 2002-11-13 | 2006-12-12 | Intel Corporation | Preconditioning via plug material for a via-in-pad ball grid array package |
| US20090117336A1 (en) * | 2005-06-01 | 2009-05-07 | Matsushita Electric Industrial Co., Ltd | Circuit board, method for manufacturing such circuit board, and electronic component using such circuit board |
| US20080099537A1 (en) * | 2006-10-31 | 2008-05-01 | Raytheon Company | Method for sealing vias in a substrate |
| TWI338562B (en) * | 2007-12-27 | 2011-03-01 | Unimicron Technology Corp | Circuit board and process thereof |
| US8247066B2 (en) * | 2009-05-06 | 2012-08-21 | Xerox Corporation | Teflon fuser member containing fluorinated nano diamonds |
| US8192817B2 (en) * | 2009-05-06 | 2012-06-05 | Xerox Corporation | VITON fuser member containing fluorinated nano diamonds |
| US8232137B2 (en) * | 2009-12-10 | 2012-07-31 | Intersil Americas Inc. | Heat conduction for chip stacks and 3-D circuits |
| US8724832B2 (en) | 2011-08-30 | 2014-05-13 | Qualcomm Mems Technologies, Inc. | Piezoelectric microphone fabricated on glass |
| US8824706B2 (en) | 2011-08-30 | 2014-09-02 | Qualcomm Mems Technologies, Inc. | Piezoelectric microphone fabricated on glass |
| US8811636B2 (en) | 2011-11-29 | 2014-08-19 | Qualcomm Mems Technologies, Inc. | Microspeaker with piezoelectric, metal and dielectric membrane |
| US20130229777A1 (en) * | 2012-03-01 | 2013-09-05 | Infineon Technologies Ag | Chip arrangements and methods for forming a chip arrangement |
| US9673131B2 (en) * | 2013-04-09 | 2017-06-06 | Intel Corporation | Integrated circuit package assemblies including a glass solder mask layer |
| CN106206543A (zh) * | 2016-08-04 | 2016-12-07 | 上海交通大学 | 基于纳米氮化铝/聚酰亚胺复合材料转接板及其制备方法 |
| CN110508957B (zh) * | 2019-09-09 | 2021-04-02 | 南昌航空大学 | 一种双层板结构的钎焊和瞬时液态扩散焊分步复合连接方法 |
| CN113517224A (zh) * | 2021-07-09 | 2021-10-19 | 广东工业大学 | 一种通孔、盲孔互连结构成型工艺 |
| CN117769163B (zh) * | 2023-12-26 | 2024-05-31 | 江苏富乐华半导体科技股份有限公司 | 一种铝薄膜电路基板制备方法 |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4862323A (en) | 1984-04-12 | 1989-08-29 | Olin Corporation | Chip carrier |
| US5483421A (en) | 1992-03-09 | 1996-01-09 | International Business Machines Corporation | IC chip attachment |
| JP2601128B2 (ja) | 1992-05-06 | 1997-04-16 | 松下電器産業株式会社 | 回路形成用基板の製造方法および回路形成用基板 |
| US5766670A (en) | 1993-11-17 | 1998-06-16 | Ibm | Via fill compositions for direct attach of devices and methods for applying same |
| US5567982A (en) * | 1994-09-30 | 1996-10-22 | Bartelink; Dirk J. | Air-dielectric transmission lines for integrated circuits |
| US5487218A (en) | 1994-11-21 | 1996-01-30 | International Business Machines Corporation | Method for making printed circuit boards with selectivity filled plated through holes |
| US5822856A (en) | 1996-06-28 | 1998-10-20 | International Business Machines Corporation | Manufacturing circuit board assemblies having filled vias |
| US5920123A (en) | 1997-01-24 | 1999-07-06 | Micron Technology, Inc. | Multichip module assembly having via contacts and method of making the same |
| US6037096A (en) * | 1998-05-26 | 2000-03-14 | International Business Machines Corporation | Film composition and method for a planar surface atop a plated through hole |
| US6365974B1 (en) * | 1999-03-23 | 2002-04-02 | Texas Instruments Incorporated | Flex circuit substrate for an integrated circuit package |
| KR100301818B1 (ko) * | 1999-06-29 | 2001-11-01 | 김영환 | 셀프 얼라인 포토리소그래피 및 그를 이용한 반도체 소자 제조방법 |
| US6452117B2 (en) * | 1999-08-26 | 2002-09-17 | International Business Machines Corporation | Method for filling high aspect ratio via holes in electronic substrates and the resulting holes |
-
2001
- 2001-01-17 US US09/764,047 patent/US6429527B1/en not_active Expired - Fee Related
- 2001-12-28 TW TW090132813A patent/TW512419B/zh not_active IP Right Cessation
-
2002
- 2002-01-09 JP JP2002002614A patent/JP4157705B2/ja not_active Expired - Fee Related
- 2002-07-17 US US10/198,388 patent/US6599833B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| US20020182832A1 (en) | 2002-12-05 |
| JP2002305367A (ja) | 2002-10-18 |
| JP4157705B2 (ja) | 2008-10-01 |
| US6429527B1 (en) | 2002-08-06 |
| US20020093072A1 (en) | 2002-07-18 |
| US6599833B2 (en) | 2003-07-29 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TW512419B (en) | Method and article for filling apertures in a high performance electronic substrate | |
| CN103943600B (zh) | 在芯片和基板之间的新型端接和连接 | |
| KR100687126B1 (ko) | 반도체 장치 및 그 제조 방법 | |
| US6504227B1 (en) | Passive semiconductor device mounted as daughter chip on active semiconductor device | |
| US7276787B2 (en) | Silicon chip carrier with conductive through-vias and method for fabricating same | |
| CN100353547C (zh) | 多芯片电路模块及其制造方法 | |
| JP3469686B2 (ja) | プリント回路基板上にはんだを付着させる方法およびプリント回路基板 | |
| JP3530149B2 (ja) | 配線基板の製造方法及び半導体装置 | |
| CN100573854C (zh) | 半导体装置、电路基板以及电子设备 | |
| CN104134643B (zh) | 具有超细间距倒装芯片凸点的基板 | |
| US20090148594A1 (en) | Interconnection element with plated posts formed on mandrel | |
| US20150262950A1 (en) | Method for Fabricating Equal Height Metal Pillars of Different Diameters | |
| TW201138033A (en) | Substrate for integrated circuit devices including multi-layer glass core and methods of making the same | |
| JP6590179B2 (ja) | 多層複合電子構造体の側面を終端する方法 | |
| JP2007059452A (ja) | インターポーザ及びその製造方法ならびに電子装置 | |
| JP4131681B2 (ja) | 半導体装置の製造方法 | |
| US5637925A (en) | Uses of uniaxially electrically conductive articles | |
| US7264991B1 (en) | Method of connecting a conductive trace to a semiconductor chip using conductive adhesive | |
| JPH0671141B2 (ja) | 多層セラミック構造体に導電性ピンを形成する方法および装置 | |
| JP2002093842A (ja) | 半導体デバイスおよびその製造方法 | |
| US20220336341A1 (en) | Lithographically defined electrical interconnects from conductive pastes | |
| JP2001102410A (ja) | 半導体装置の実装構造 | |
| JPH11509991A (ja) | 恒久的接続のために電気回路の上に隆起した金属接点を作成する方法 | |
| JP2001077234A (ja) | プリント配線板、半導体装置およびその製造方法 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GD4A | Issue of patent certificate for granted invention patent | ||
| MM4A | Annulment or lapse of patent due to non-payment of fees |