TW509994B - Layer-generation method in the production of a semiconductor element and said semiconductor-element film - Google Patents

Layer-generation method in the production of a semiconductor element and said semiconductor-element film Download PDF

Info

Publication number
TW509994B
TW509994B TW089122071A TW89122071A TW509994B TW 509994 B TW509994 B TW 509994B TW 089122071 A TW089122071 A TW 089122071A TW 89122071 A TW89122071 A TW 89122071A TW 509994 B TW509994 B TW 509994B
Authority
TW
Taiwan
Prior art keywords
semiconductor
layer
patent application
semiconductor substrate
fluorocarbon
Prior art date
Application number
TW089122071A
Other languages
English (en)
Chinese (zh)
Inventor
Volker Dr Weinrich
Sebastian Veith
Original Assignee
Infineon Technologies Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Infineon Technologies Corp filed Critical Infineon Technologies Corp
Application granted granted Critical
Publication of TW509994B publication Critical patent/TW509994B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02118—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC
    • H01L21/0212—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC the material being fluoro carbon compounds, e.g.(CFx) n, (CHxFy) n or polytetrafluoroethylene
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D1/00—Processes for applying liquids or other fluent materials
    • B05D1/62—Plasma-deposition of organic layers
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Plasma & Fusion (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Formation Of Insulating Films (AREA)
  • Drying Of Semiconductors (AREA)
TW089122071A 1999-10-20 2000-10-20 Layer-generation method in the production of a semiconductor element and said semiconductor-element film TW509994B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19950565A DE19950565A1 (de) 1999-10-20 1999-10-20 Schichterzeugungsverfahren bei der Herstellung eines Halbleiterbauelements und Halbleiterbauelement

Publications (1)

Publication Number Publication Date
TW509994B true TW509994B (en) 2002-11-11

Family

ID=7926304

Family Applications (1)

Application Number Title Priority Date Filing Date
TW089122071A TW509994B (en) 1999-10-20 2000-10-20 Layer-generation method in the production of a semiconductor element and said semiconductor-element film

Country Status (3)

Country Link
DE (1) DE19950565A1 (de)
TW (1) TW509994B (de)
WO (1) WO2001029886A1 (de)

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0176636B1 (de) * 1984-09-28 1990-05-09 Japan Synthetic Rubber Co., Ltd. Dünner Kunststoffilm und ein solchen Film enthaltender gegenstand
US5888591A (en) * 1996-05-06 1999-03-30 Massachusetts Institute Of Technology Chemical vapor deposition of fluorocarbon polymer thin films
US5895740A (en) * 1996-11-13 1999-04-20 Vanguard International Semiconductor Corp. Method of forming contact holes of reduced dimensions by using in-situ formed polymeric sidewall spacers

Also Published As

Publication number Publication date
DE19950565A1 (de) 2001-05-10
WO2001029886A1 (de) 2001-04-26

Similar Documents

Publication Publication Date Title
TWI391987B (zh) 用於處理光微影倍縮光罩的方法
TWI375991B (en) Method for multi-layer resist plasma etch
KR100777043B1 (ko) 비정질 탄소막 형성 방법 및 이를 이용한 반도체 소자의제조 방법
TWI336107B (en) Damage-free ashing process and system for post low-k etch
TWI326796B (en) Cluster tool and method for process integration in manufacturing of a photomask
JP5289863B2 (ja) アモルファスカーボンナイトライド膜の形成方法、多層レジスト膜、半導体装置の製造方法および制御プログラムが記憶された記憶媒体
US20070072422A1 (en) Hydrogen treatment to improve photoresist adhesion and rework consistency
TWI413187B (zh) Method for forming amorphous carbon film, amorphous carbon film, multilayer resist film, manufacturing method of semiconductor device, and computer readable recording medium
KR20070035976A (ko) 포토마스크 제조용으로 적합한 카본 하드마스크를 통한크롬 층의 플라즈마 에칭 방법
TW201903899A (zh) 圖案化低介電常數介電膜之方法
TW200941575A (en) Method for etching silicon-containing ARC layer with reduced CD bias
TW201224191A (en) Radiation patternable CVD film
TW200947550A (en) Line width roughness improvement with noble gas plasma
US20090104541A1 (en) Plasma surface treatment to prevent pattern collapse in immersion lithography
TW200939346A (en) Elimination of photoresis material collapse and poisoning in 45-nm feature size using dry or immersion lithography
JP2011035395A (ja) 二酸化炭素／一酸化炭素に基づく処理を利用した基板アッシング方法
JP4716370B2 (ja) 低誘電率膜のダメージ修復方法及び半導体製造装置
TW561508B (en) Methods and apparatus for etching metal layers on substrates
JP5036726B2 (ja) フォトリソグラフィ用基体の改善されたエッチング方法
TW200821747A (en) Phase shifting photomask and a method of fabricating thereof
JP2012212706A (ja) 半導体装置及びその製法において用いられるアモルファスカーボン膜の製造法
TW509994B (en) Layer-generation method in the production of a semiconductor element and said semiconductor-element film
TW200401946A (en) Process for etching photomasks
KR102442676B1 (ko) 오존가스를 이용한 펠리클 소재용 그래핀박막의 제조방법
TW478033B (en) Improved dry photolithography process for deep ultraviolet exposure

Legal Events

Date Code Title Description
GD4A Issue of patent certificate for granted invention patent
MM4A Annulment or lapse of patent due to non-payment of fees