TW480900B - Method for igniting a plasma inside a plasma processing reactor - Google Patents
Method for igniting a plasma inside a plasma processing reactor Download PDFInfo
- Publication number
- TW480900B TW480900B TW088120076A TW88120076A TW480900B TW 480900 B TW480900 B TW 480900B TW 088120076 A TW088120076 A TW 088120076A TW 88120076 A TW88120076 A TW 88120076A TW 480900 B TW480900 B TW 480900B
- Authority
- TW
- Taiwan
- Prior art keywords
- magnetic field
- plasma
- patent application
- scope
- item
- Prior art date
Links
- 238000012545 processing Methods 0.000 title claims abstract description 118
- 238000000034 method Methods 0.000 title claims abstract description 34
- 230000001939 inductive effect Effects 0.000 claims abstract description 38
- 230000005684 electric field Effects 0.000 claims abstract description 27
- 239000000758 substrate Substances 0.000 claims abstract description 14
- 238000009832 plasma treatment Methods 0.000 claims description 9
- 230000004907 flux Effects 0.000 claims description 8
- 230000002079 cooperative effect Effects 0.000 claims description 4
- 230000004913 activation Effects 0.000 claims description 2
- 230000008569 process Effects 0.000 abstract description 9
- 238000005530 etching Methods 0.000 description 9
- 230000001965 increasing effect Effects 0.000 description 7
- 230000007935 neutral effect Effects 0.000 description 7
- 238000006243 chemical reaction Methods 0.000 description 5
- 239000003574 free electron Substances 0.000 description 5
- 230000006698 induction Effects 0.000 description 5
- 150000002500 ions Chemical class 0.000 description 5
- 238000010586 diagram Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- 238000001514 detection method Methods 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000009466 transformation Effects 0.000 description 2
- 238000000844 transformation Methods 0.000 description 2
- 229910052770 Uranium Inorganic materials 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000000977 initiatory effect Effects 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- JFALSRSLKYAFGM-UHFFFAOYSA-N uranium(0) Chemical compound [U] JFALSRSLKYAFGM-UHFFFAOYSA-N 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3266—Magnetic control means
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Drying Of Semiconductors (AREA)
- Plasma Technology (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US09/223,692 US6028286A (en) | 1998-12-30 | 1998-12-30 | Method for igniting a plasma inside a plasma processing reactor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW480900B true TW480900B (en) | 2002-03-21 |
Family
ID=22837613
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW088120076A TW480900B (en) | 1998-12-30 | 1999-11-17 | Method for igniting a plasma inside a plasma processing reactor |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US6028286A (enExample) |
| JP (1) | JP4615730B2 (enExample) |
| KR (1) | KR100694634B1 (enExample) |
| IL (2) | IL144022A0 (enExample) |
| TW (1) | TW480900B (enExample) |
| WO (1) | WO2000039838A2 (enExample) |
Families Citing this family (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000331993A (ja) * | 1999-05-19 | 2000-11-30 | Mitsubishi Electric Corp | プラズマ処理装置 |
| US7591957B2 (en) * | 2001-01-30 | 2009-09-22 | Rapt Industries, Inc. | Method for atmospheric pressure reactive atom plasma processing for surface modification |
| US7510664B2 (en) | 2001-01-30 | 2009-03-31 | Rapt Industries, Inc. | Apparatus and method for atmospheric pressure reactive atom plasma processing for shaping of damage free surfaces |
| US6673199B1 (en) | 2001-03-07 | 2004-01-06 | Applied Materials, Inc. | Shaping a plasma with a magnetic field to control etch rate uniformity |
| US6660177B2 (en) * | 2001-11-07 | 2003-12-09 | Rapt Industries Inc. | Apparatus and method for reactive atom plasma processing for material deposition |
| US20080190558A1 (en) * | 2002-04-26 | 2008-08-14 | Accretech Usa, Inc. | Wafer processing apparatus and method |
| US20080011332A1 (en) * | 2002-04-26 | 2008-01-17 | Accretech Usa, Inc. | Method and apparatus for cleaning a wafer substrate |
| US20080017316A1 (en) * | 2002-04-26 | 2008-01-24 | Accretech Usa, Inc. | Clean ignition system for wafer substrate processing |
| US7371992B2 (en) | 2003-03-07 | 2008-05-13 | Rapt Industries, Inc. | Method for non-contact cleaning of a surface |
| US7304263B2 (en) * | 2003-08-14 | 2007-12-04 | Rapt Industries, Inc. | Systems and methods utilizing an aperture with a reactive atom plasma torch |
| US7297892B2 (en) * | 2003-08-14 | 2007-11-20 | Rapt Industries, Inc. | Systems and methods for laser-assisted plasma processing |
| JP4896861B2 (ja) * | 2007-12-10 | 2012-03-14 | 株式会社東芝 | 半導体製造方法および半導体製造装置 |
| US20090284421A1 (en) * | 2008-05-16 | 2009-11-19 | Yuri Glukhoy | RF antenna assembly having an antenna with transversal magnetic field for generation of inductively coupled plasma |
| US8222822B2 (en) * | 2009-10-27 | 2012-07-17 | Tyco Healthcare Group Lp | Inductively-coupled plasma device |
| US10388493B2 (en) * | 2011-09-16 | 2019-08-20 | Lam Research Corporation | Component of a substrate support assembly producing localized magnetic fields |
| JP7639030B2 (ja) * | 2020-07-09 | 2025-03-04 | ラム リサーチ コーポレーション | 調節可能な形状トリムコイル |
Family Cites Families (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06105597B2 (ja) * | 1982-08-30 | 1994-12-21 | 株式会社日立製作所 | マイクロ波プラズマ源 |
| US4500408A (en) * | 1983-07-19 | 1985-02-19 | Varian Associates, Inc. | Apparatus for and method of controlling sputter coating |
| FR2555362B1 (fr) * | 1983-11-17 | 1990-04-20 | France Etat | Procede et dispositif de traitement d'un materiau semi-conducteur, par plasma |
| US5053244A (en) * | 1987-02-21 | 1991-10-01 | Leybold Aktiengesellschaft | Process for depositing silicon oxide on a substrate |
| DE3820237C1 (enExample) * | 1988-06-14 | 1989-09-14 | Max-Planck-Gesellschaft Zur Foerderung Der Wissenschaften Ev, 3400 Goettingen, De | |
| GB8905075D0 (en) * | 1989-03-06 | 1989-04-19 | Nordiko Ltd | Electrode assembly and apparatus |
| DE69128345T2 (de) * | 1990-01-04 | 1998-03-26 | Mattson Tech Inc | Induktiver plasmareaktor im unteren hochfrequenzbereich |
| US5304279A (en) * | 1990-08-10 | 1994-04-19 | International Business Machines Corporation | Radio frequency induction/multipole plasma processing tool |
| US5849136A (en) * | 1991-10-11 | 1998-12-15 | Applied Materials, Inc. | High frequency semiconductor wafer processing apparatus and method |
| US5531834A (en) * | 1993-07-13 | 1996-07-02 | Tokyo Electron Kabushiki Kaisha | Plasma film forming method and apparatus and plasma processing apparatus |
| US5468296A (en) * | 1993-12-17 | 1995-11-21 | Lsi Logic Corporation | Apparatus for igniting low pressure inductively coupled plasma |
| JPH07263191A (ja) * | 1994-03-17 | 1995-10-13 | Hitachi Ltd | プラズマ処理装置 |
| JPH0888096A (ja) * | 1994-09-19 | 1996-04-02 | Hitachi Ltd | プラズマ発生方法 |
| US5512150A (en) * | 1995-03-09 | 1996-04-30 | Hmt Technology Corporation | Target assembly having inner and outer targets |
| US5767628A (en) * | 1995-12-20 | 1998-06-16 | International Business Machines Corporation | Helicon plasma processing tool utilizing a ferromagnetic induction coil with an internal cooling channel |
| JPH10149897A (ja) * | 1996-11-21 | 1998-06-02 | Sumitomo Metal Ind Ltd | プラズマ処理方法 |
| JPH10172793A (ja) * | 1996-12-17 | 1998-06-26 | Mitsubishi Heavy Ind Ltd | プラズマ発生装置 |
| US5902563A (en) * | 1997-10-30 | 1999-05-11 | Pl-Limited | RF/VHF plasma diamond growth method and apparatus and materials produced therein |
-
1998
- 1998-12-30 US US09/223,692 patent/US6028286A/en not_active Expired - Lifetime
-
1999
- 1999-11-17 TW TW088120076A patent/TW480900B/zh not_active IP Right Cessation
- 1999-12-28 JP JP2000591651A patent/JP4615730B2/ja not_active Expired - Fee Related
- 1999-12-28 WO PCT/US1999/031076 patent/WO2000039838A2/en not_active Ceased
- 1999-12-28 IL IL14402299A patent/IL144022A0/xx active IP Right Grant
- 1999-12-28 KR KR1020017008250A patent/KR100694634B1/ko not_active Expired - Fee Related
-
2001
- 2001-06-27 IL IL144022A patent/IL144022A/en not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| IL144022A (en) | 2006-07-05 |
| WO2000039838A3 (en) | 2000-11-16 |
| WO2000039838A2 (en) | 2000-07-06 |
| KR20010099991A (ko) | 2001-11-09 |
| JP2002533950A (ja) | 2002-10-08 |
| IL144022A0 (en) | 2002-04-21 |
| KR100694634B1 (ko) | 2007-03-13 |
| US6028286A (en) | 2000-02-22 |
| JP4615730B2 (ja) | 2011-01-19 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GD4A | Issue of patent certificate for granted invention patent | ||
| MM4A | Annulment or lapse of patent due to non-payment of fees |