KR100694634B1 - 플라즈마 프로세싱 리액터 내부의 플라즈마를 착화시키는방법 - Google Patents

플라즈마 프로세싱 리액터 내부의 플라즈마를 착화시키는방법 Download PDF

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Publication number
KR100694634B1
KR100694634B1 KR1020017008250A KR20017008250A KR100694634B1 KR 100694634 B1 KR100694634 B1 KR 100694634B1 KR 1020017008250 A KR1020017008250 A KR 1020017008250A KR 20017008250 A KR20017008250 A KR 20017008250A KR 100694634 B1 KR100694634 B1 KR 100694634B1
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South Korea
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magnetic field
plasma
process chamber
plasma processing
processing reactor
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Korean (ko)
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KR20010099991A (ko
Inventor
토마스 윅커
조엘 쿡
첸.지안
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램 리서치 코포레이션
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3266—Magnetic control means

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
KR1020017008250A 1998-12-30 1999-12-28 플라즈마 프로세싱 리액터 내부의 플라즈마를 착화시키는방법 Expired - Fee Related KR100694634B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/223,692 1998-12-30
US09/223,692 US6028286A (en) 1998-12-30 1998-12-30 Method for igniting a plasma inside a plasma processing reactor

Publications (2)

Publication Number Publication Date
KR20010099991A KR20010099991A (ko) 2001-11-09
KR100694634B1 true KR100694634B1 (ko) 2007-03-13

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020017008250A Expired - Fee Related KR100694634B1 (ko) 1998-12-30 1999-12-28 플라즈마 프로세싱 리액터 내부의 플라즈마를 착화시키는방법

Country Status (6)

Country Link
US (1) US6028286A (enExample)
JP (1) JP4615730B2 (enExample)
KR (1) KR100694634B1 (enExample)
IL (2) IL144022A0 (enExample)
TW (1) TW480900B (enExample)
WO (1) WO2000039838A2 (enExample)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000331993A (ja) * 1999-05-19 2000-11-30 Mitsubishi Electric Corp プラズマ処理装置
US7591957B2 (en) * 2001-01-30 2009-09-22 Rapt Industries, Inc. Method for atmospheric pressure reactive atom plasma processing for surface modification
US7510664B2 (en) 2001-01-30 2009-03-31 Rapt Industries, Inc. Apparatus and method for atmospheric pressure reactive atom plasma processing for shaping of damage free surfaces
US6673199B1 (en) 2001-03-07 2004-01-06 Applied Materials, Inc. Shaping a plasma with a magnetic field to control etch rate uniformity
US6660177B2 (en) * 2001-11-07 2003-12-09 Rapt Industries Inc. Apparatus and method for reactive atom plasma processing for material deposition
US20080190558A1 (en) * 2002-04-26 2008-08-14 Accretech Usa, Inc. Wafer processing apparatus and method
US20080011332A1 (en) * 2002-04-26 2008-01-17 Accretech Usa, Inc. Method and apparatus for cleaning a wafer substrate
US20080017316A1 (en) * 2002-04-26 2008-01-24 Accretech Usa, Inc. Clean ignition system for wafer substrate processing
US7371992B2 (en) 2003-03-07 2008-05-13 Rapt Industries, Inc. Method for non-contact cleaning of a surface
US7304263B2 (en) * 2003-08-14 2007-12-04 Rapt Industries, Inc. Systems and methods utilizing an aperture with a reactive atom plasma torch
US7297892B2 (en) * 2003-08-14 2007-11-20 Rapt Industries, Inc. Systems and methods for laser-assisted plasma processing
JP4896861B2 (ja) * 2007-12-10 2012-03-14 株式会社東芝 半導体製造方法および半導体製造装置
US20090284421A1 (en) * 2008-05-16 2009-11-19 Yuri Glukhoy RF antenna assembly having an antenna with transversal magnetic field for generation of inductively coupled plasma
US8222822B2 (en) * 2009-10-27 2012-07-17 Tyco Healthcare Group Lp Inductively-coupled plasma device
US10388493B2 (en) * 2011-09-16 2019-08-20 Lam Research Corporation Component of a substrate support assembly producing localized magnetic fields
JP7639030B2 (ja) * 2020-07-09 2025-03-04 ラム リサーチ コーポレーション 調節可能な形状トリムコイル

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1991010341A1 (en) * 1990-01-04 1991-07-11 Savas Stephen E A low frequency inductive rf plasma reactor

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JPH06105597B2 (ja) * 1982-08-30 1994-12-21 株式会社日立製作所 マイクロ波プラズマ源
US4500408A (en) * 1983-07-19 1985-02-19 Varian Associates, Inc. Apparatus for and method of controlling sputter coating
FR2555362B1 (fr) * 1983-11-17 1990-04-20 France Etat Procede et dispositif de traitement d'un materiau semi-conducteur, par plasma
US5053244A (en) * 1987-02-21 1991-10-01 Leybold Aktiengesellschaft Process for depositing silicon oxide on a substrate
DE3820237C1 (enExample) * 1988-06-14 1989-09-14 Max-Planck-Gesellschaft Zur Foerderung Der Wissenschaften Ev, 3400 Goettingen, De
GB8905075D0 (en) * 1989-03-06 1989-04-19 Nordiko Ltd Electrode assembly and apparatus
US5304279A (en) * 1990-08-10 1994-04-19 International Business Machines Corporation Radio frequency induction/multipole plasma processing tool
US5849136A (en) * 1991-10-11 1998-12-15 Applied Materials, Inc. High frequency semiconductor wafer processing apparatus and method
US5531834A (en) * 1993-07-13 1996-07-02 Tokyo Electron Kabushiki Kaisha Plasma film forming method and apparatus and plasma processing apparatus
US5468296A (en) * 1993-12-17 1995-11-21 Lsi Logic Corporation Apparatus for igniting low pressure inductively coupled plasma
JPH07263191A (ja) * 1994-03-17 1995-10-13 Hitachi Ltd プラズマ処理装置
JPH0888096A (ja) * 1994-09-19 1996-04-02 Hitachi Ltd プラズマ発生方法
US5512150A (en) * 1995-03-09 1996-04-30 Hmt Technology Corporation Target assembly having inner and outer targets
US5767628A (en) * 1995-12-20 1998-06-16 International Business Machines Corporation Helicon plasma processing tool utilizing a ferromagnetic induction coil with an internal cooling channel
JPH10149897A (ja) * 1996-11-21 1998-06-02 Sumitomo Metal Ind Ltd プラズマ処理方法
JPH10172793A (ja) * 1996-12-17 1998-06-26 Mitsubishi Heavy Ind Ltd プラズマ発生装置
US5902563A (en) * 1997-10-30 1999-05-11 Pl-Limited RF/VHF plasma diamond growth method and apparatus and materials produced therein

Patent Citations (1)

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Publication number Priority date Publication date Assignee Title
WO1991010341A1 (en) * 1990-01-04 1991-07-11 Savas Stephen E A low frequency inductive rf plasma reactor

Also Published As

Publication number Publication date
IL144022A (en) 2006-07-05
WO2000039838A3 (en) 2000-11-16
WO2000039838A2 (en) 2000-07-06
KR20010099991A (ko) 2001-11-09
JP2002533950A (ja) 2002-10-08
IL144022A0 (en) 2002-04-21
TW480900B (en) 2002-03-21
US6028286A (en) 2000-02-22
JP4615730B2 (ja) 2011-01-19

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