TW480550B - Use of barrier refractive or anti-reflective layer to improve laser trim characteristics of thin film resistors - Google Patents

Use of barrier refractive or anti-reflective layer to improve laser trim characteristics of thin film resistors Download PDF

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TW480550B
TW480550B TW089111131A TW89111131A TW480550B TW 480550 B TW480550 B TW 480550B TW 089111131 A TW089111131 A TW 089111131A TW 89111131 A TW89111131 A TW 89111131A TW 480550 B TW480550 B TW 480550B
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Taiwan
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layer
substrate
integrated circuit
reflective
laser
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TW089111131A
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Michael Morrison
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Intersil Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/20—Resistors
    • H01L28/24—Resistors with an active material comprising a refractory, transition or noble metal, metal compound or metal alloy, e.g. silicides, oxides, nitrides
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/0006—Working by laser beam, e.g. welding, cutting or boring taking account of the properties of the material involved
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/009—Working by laser beam, e.g. welding, cutting or boring using a non-absorbing, e.g. transparent, reflective or refractive, layer on the workpiece
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/50—Working by transmitting the laser beam through or within the workpiece
    • B23K26/53—Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/50—Working by transmitting the laser beam through or within the workpiece
    • B23K26/57—Working by transmitting the laser beam through or within the workpiece the laser beam entering a face of the workpiece from which it is transmitted through the workpiece material to work on a different workpiece face, e.g. for effecting removal, fusion splicing, modifying or reforming
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
    • H01C17/22—Apparatus or processes specially adapted for manufacturing resistors adapted for trimming
    • H01C17/24—Apparatus or processes specially adapted for manufacturing resistors adapted for trimming by removing or adding resistive material
    • H01C17/242—Apparatus or processes specially adapted for manufacturing resistors adapted for trimming by removing or adding resistive material by laser
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00—Articles made by soldering, welding or cutting
    • B23K2101/36—Electric or electronic devices
    • B23K2101/40—Semiconductor devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/16—Composite materials, e.g. fibre reinforced

Description

A7
本發明係關於薄膜微電路電阻的製造和調整，和改善雷 射切割器的特定問題以達成電路參數的值給此電阻。 此雷射切割的技術使薄膜電阻產生其電路參數的值已知 發表於Elshabini-Riad和Barlow的薄膜技術手冊，5 6 4至 5.6.7節，McGraw-Hill ( 1998年）。目前的練習要求厚度緊 的處理控制及此半導體晶圓之薄層的光學特性，其置於此 薄膜電阻層之下，努力避免由於非均句之雷射能量光束干 涉所造成的不規則性。 考慮一典型精密電阻的結構如圖1中所示。其具有一碎 處理的基板90，其為氧化物連結80至一矽裝置基板7〇。 熱氧化物6 0生長此裝置的表面上。沉積介電材料的薄 層50覆蓋此熱氧化物6〇。一 NiCr或siCr之精密可切割的 電阻材料40沉積在此場介電質層5〇上。另一氧化物層3〇 沉積在電阻層4 0上。此上氧化物層3 〇被平面化且用鍍上 一鈍化氮化物層2 0。入射雷射光1 〇通過所有的薄層直到 其最後被此處理基板90反射或吸收。此反射由箭頭55， 65 ’ 75和·8 5來顯示。注意此雷射光束的路徑1〇被交替著 當其通過不同的材料時，其形成此裝置。 此入射的雷射光束通過此NiCr或SiCr電阻後，此光束碰 到許多其他的薄層。這些薄層和此薄層之一及另一薄層之 間的介面具有不同的折射率。同樣的，此雷射光束自其入 射路徑反射’根據史 >圼耳定律：入射角的正弦和折射角正 弦的比值等於材料折射率的比值。此雷射光束被一個以上 的下薄層反射在此電阻材料的反面。此反射的雷射可能夠 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公嫠)
裝 訂
線 五、發明説明（2 ) 強以化學地改變某此雷阳从 改變電阻。.材科，且因此以一不希望的方式 因此’精密薄膜電阻5雨血 射光束能量與此電二質可以改變由於雷 =干涉。切割品質被此Nicr電阻之上或之下薄層的光學特 ΐ及厚度所影響。此影響已經由經驗上地和由光學效果的 電腦=確認。因此，許多生產的晶圓批量可能： 估Γ其f曰切割。雷射切割的品質被主觀地評 ο®批量由於差勁的雷射切口品質而被丢棄， 過「晶圓’甚至-單-的晶粒。此問題的結 環的操作，測量和重切刻為了二;==個循 電路所要求的精確電阻值。$“阻至此積體或薄膜 美國^第5,608,257號的規格係關於—可炫連結的雷射 道由在下面的反射和折射層之合成 =法然而其未對由精密電阻所產生的問題提供任何的二 本發明插入一難炫的材料，其作用如同一在薄膜電阻声 :的先學柵欄和一介電質薄膜將此難熔材料和此薄膜二 了預防在此電路中之電阻的電子行為。這些；層 電質:和半導體晶圓下層的交互作用，包括碎和介 求。㈢’’除緊緊控制這些薄層之厚度和光學特性的需 本發明包括-具有-精密可切割電阻之積體電路， A7
:半導：：置基板’至少一形成在該基板之裝置或積體電 :，-沈積於該基板之反射層1以反射一切刻雷射光 束，一沈積於該反射層之可切割電阻層。
裝 便利地，本發明要求—額外的折射層，和-介電質層， 二者都在此雷射切刻的電阻薄膜之下。此新發明與由消除 在此栅攔的折射層之下的裝置矽和鍵結氧化層和雷射能量 之間的交互作用以確保有品質的切割。因為此裝置的梦和 鍵結氧化的下薄層不再能影響此雷射能量的局部強度，此 改善了雷射切割和切口的均勾性。 現在本發明將藉由例子和參考伴隨的圖例來描述，並 中： ’、 圖1是目則系統和方法的概觀，其中用於電組切割的雷 射能量穿透和被此半導體產品之材料的薄層反射。 訂
圖2是一提出之系統的概觀，顯示此難熔/障礙金屬的使 用以消除在雷射切割期間反射的雷射能量。 參考圖2，此積體電路具有一裝置矽層7〇其包括一個以 上的半導體裝置或一積體電路。此裝置和積體電路及其個 別的製造是平常的。此裝置基板7 〇可能或可能不具有一 處理基板90，其為氧化鍵結80於此裝置基板7〇的背後。 在此裝置或積體電路的形成後，此裝置或積體電路被一適 合的絕緣體，像沉積的或熱氧化物5 0，6 0所覆蓋。這些 薄層被此難熔/障礙層1 〇 〇所覆蓋。在一根據本發明所製 成的裝置中’此絕緣體層被要求分開此裝置和難熔障礙金 屬100可能是導電的。薄層1〇〇沉積在基板上且包含一難 本紙張尺度適用中國國家標準(CNS) A4規格(210X 297公釐) 480550 A7 B7 五 發明説明（ 4 炫材料像鎢，鈦，鉬和難熔的矽化物像TiSi2 , c〇si2 , M〇Si2 ’ TaSh和WSia。希望一難熔材料能經得起入射雷射 光束的熱。一障礙氧化物層1 1 〇沉積在此難熔層1 0 0的頂 上。此障礙層1 1 〇作用如同一電子的和熱的絕緣物以保護 在上層免於自入射雷射在反射層上所產生過量的熱。 該薄層和上薄層實際上與討論於上之常用的雷射切割電阻 層相同。 參考圖1，在半導體電路設計期間，精密可切割的電阻 併入包路中’如一電阻材料之薄膜4 〇的定義區域像NiCr 或SiCr。薄膜4〇典型地位於鍵結氧化物層8〇 ,裝置矽層 70，熱氧化物層00 ,和沉積的場介電質層5〇上。在薄膜 4〇中切割一電阻至其要求的電路參考值，聚焦的雷射能 量1 〇加於化學地變化電阻的材料自薄膜4〇在一個以上的 圖樣中，在技術上已熟知的。此雷射有效地圍繞，混合或 否則結合此氧化物在此電阻材料的任一側，用此電阻材料 其被雷射所照射。此電阻在該位置變成電子地不連續。某 些部分的雷射能量1〇正常地穿透薄層5〇，6〇 , 7〇和80， 而每一薄層50 , 60 , 70和80反射某部分的入射能量向上 向著電阻薄膜40。此入射雷射能量1〇的波長被敏銳地定 義且高度地同調；因此在任何薄層5〇 , 6〇 , 7〇和8〇之厚 ^中的變量可能造成重要的干涉基礎的變量在反射的切割 雷射能量55，65，75和85中。此變量可能依次在此切割 秸序中造成不均勻的切口，造成在電阻上電子行為之不可 靠的切割。 本紙張尺度適用巾S @家標準(CNS) Μ規格(21GX挪公羡)
裝 訂
參考圖2 »本發明結合在薄層4G中每__電阻下的一難溶 層1 〇 〇和一熱氧化物 柳/ ;丨％負11 0以吸收雷射能量，其會穿 透至此電阻下的裝置碎層70和鍵結氧化物層80V薄層 100位於薄層no下，而其蝕刻剖面被決定尺寸在每一計 劃的电阻下在-足夠大的尺寸中以確保雷射切割對於意料 不到《雷射能量《可接受的保護，其可能脫離進入較深層 5〇，60，70和80 ^本發明整修薄層ιι〇的厚度使得在反 射55中的’受量最小。一旦電阻.層4〇在適當的位置，製造 被一般的應用來完成經由在薄層3〇和鈍化氮化物層2〇 中。 在一典型的應用中，一波長1〇6微米的雷射光束具有一 1.06/1.45微米或7310埃的波長在氧化物中和丨〇6/3 54微米 或2994埃在矽中。當此光被反射出此反射層時，建設性 和破壞性干涉產生在該層内具有一半波長的週期在該材料 中，或1497埃在矽中和3655埃在氧化物中。脫離該層的光 量也經過最小和最大值，其最後被偵測為此犯以層的反射 率。此反射層典型地是一難熔材料像鎢，鈦，鉬，TiSh， CoSi2，MoSi2，TaSi2和WSi2。因為此難熔材料是導電的， 其被一適當的，透明的絕緣層，像二氧化矽或氮化矽，與 電阻層電子地隔絕。 以上的描述和摘要，與圖一起，顯示本發明的優點在降 低當使用雷射切割之薄膜電阻在行為中的不精確度。除了 此難熔/障礙金屬層之外，此熱障礙/隔絕氧化物層和電阻 層，此絕緣，導電和半導電材料層的數目和特性可以改變 -8- 本纸張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐)
裝 訂
480550 A7 _B7__ 五、發明説明（6 ) 而不影響本發明的操作和結構。此外，本發明的利益應用 於所有產生在VLSI半導體製造之電路的形式，無論此薄 膜電阻被使用在何處和用雷射方法切割。最後，任何用於 薄膜電阻被雷射切割程序強制在裝置矽和介電質層厚度上 的限制被本發明除去。 一 NiCr或SiCr的精密電阻具有一折射的和熱障礙層在電 阻之下。此折射障礙是一難溶金屬層。此難溶金屬預防一 雷射切割器之入射的雷射光束穿透此裝置的下薄層。造成 自下薄層之不想要的反射和折射被避免了。此反射障礙層 是一選擇自由鎢，鈥，4目，TiSi2，CoSi2，MoSi2，TaSi2和 WSi2組成之群組的材料。 圖式元件符號說明 裝 10 入射和反射的雷射能 70 裝置矽層 20 純化氮化物 75 反射的切割雷射能量 30 經由氧化物平面化 80 鍵結氧化物 40 電阻(NiCr或SiCr)薄膜 85 反射的切割雷射能量 50 沈積的場介電質層 90 處理晶圓 55 反射的切割雷射能量 100 難熔/障礙金屬 60 熱氧化物 110 熱氧化物/介電質膜 65 反射的切割雷射能量 訂
線 -9 - 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公釐）

Claims (1)

  1. 修正I 補充I 六、申請專利範圍 漤：有精在可切割電阻的積體電路，包含一半導體 :板，至少一裝置或一積體電路形成在此基板 ’：反射層沉積在此基板上以反射一切割的雷射光 束，一可切割的電阻層沉積在此反射層中。 2·=申凊專利範圍第1項的積體電路，其特徵為-透明 i表層沉積在此基板上且介於此反射層和此可切割電 阻層之間。 3.::申清專利範圍第2項的積體電路，#中此反射層包 熔材料，其中此難熔材料包含-材料選擇自鎢， 鈦’鉬’ TiSi2 ’ CoSi2，M〇Si2，丁叫和㈣組成的群 組0 其特徵為此絕緣 其特徵為此裝置 4·根據申請專利範圍第2項的積體電路 層疋一氧化碎或氮化碎。 5.根據申請專利範圍第丨項的積體電路 基板疋氧化物鍵結於一處理基板。 6. 理 置 金 該 的 一種帶有可切割精密電阻層的積體電路，包含一處 基板，·一鍵結氧化物層，用以連結處理晶圓至一裝 基板，一裝置基板，其特徵為一難熔的，反射障礙 屬層在該裝置基板上以反射入射的雷射光，一在該難 熔的，反射障礙金屬層之熱障礙用以當雷射光打在 難熔的，反射障礙金屬層時隔絕產生在最上薄層 熱，T雷射可切割精密電阻層，在此熱障礙層上， 在該雷射可切割精密電阻層上之平面化的氧化物層 和一在此平面化的氧化物層上之鈍化層。 10 本紙張尺度適用中國國家揉準(CNS) A4規格(21〇Χ297公釐） 480550 A8 B8 C8 D8 、申請專利範圍 7 ·根據申請專利範圍第6項的積體電路，其特徵為此反射 障礙為一選擇自鎢，鈥，鈿，TiSi2，CoSi2，MoSi〗， TaSi2和WSi2組成之群組的材料。 -11 · 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐)
TW089111131A 1999-07-21 2000-06-08 Use of barrier refractive or anti-reflective layer to improve laser trim characteristics of thin film resistors TW480550B (en)

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US11713271B2 (en) 2013-03-21 2023-08-01 Corning Laser Technologies GmbH Device and method for cutting out contours from planar substrates by means of laser
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US11773004B2 (en) 2015-03-24 2023-10-03 Corning Incorporated Laser cutting and processing of display glass compositions
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US6259151B1 (en) 2001-07-10
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JP2001068629A (ja) 2001-03-16

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