TW479076B - Interference layer system - Google Patents
Interference layer system Download PDFInfo
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- TW479076B TW479076B TW086110716A TW86110716A TW479076B TW 479076 B TW479076 B TW 479076B TW 086110716 A TW086110716 A TW 086110716A TW 86110716 A TW86110716 A TW 86110716A TW 479076 B TW479076 B TW 479076B
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- layer
- substrate
- sputtering
- oxide layer
- deposited
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
- C03C17/36—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal
- C03C17/3602—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer
- C03C17/3657—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer the multilayer coating having optical properties
- C03C17/366—Low-emissivity or solar control coatings
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/22—Surface treatment of glass, not in the form of fibres or filaments, by coating with other inorganic material
- C03C17/23—Oxides
- C03C17/245—Oxides by deposition from the vapour phase
- C03C17/2456—Coating containing TiO2
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
- C03C17/36—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0021—Reactive sputtering or evaporation
- C23C14/0036—Reactive sputtering
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
- C23C14/083—Oxides of refractory metals or yttrium
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/10—Glass or silica
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3471—Introduction of auxiliary energy into the plasma
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2217/00—Coatings on glass
- C03C2217/20—Materials for coating a single layer on glass
- C03C2217/21—Oxides
- C03C2217/212—TiO2
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2217/00—Coatings on glass
- C03C2217/70—Properties of coatings
- C03C2217/73—Anti-reflective coatings with specific characteristics
- C03C2217/734—Anti-reflective coatings with specific characteristics comprising an alternation of high and low refractive indexes
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2218/00—Methods for coating glass
- C03C2218/10—Deposition methods
- C03C2218/15—Deposition methods from the vapour phase
- C03C2218/154—Deposition methods from the vapour phase by sputtering
- C03C2218/155—Deposition methods from the vapour phase by sputtering by reactive sputtering
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2218/00—Methods for coating glass
- C03C2218/10—Deposition methods
- C03C2218/15—Deposition methods from the vapour phase
- C03C2218/154—Deposition methods from the vapour phase by sputtering
- C03C2218/156—Deposition methods from the vapour phase by sputtering by magnetron sputtering
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Mechanical Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Geochemistry & Mineralogy (AREA)
- Life Sciences & Earth Sciences (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Physical Vapour Deposition (AREA)
- Chemical Vapour Deposition (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
Description
479076
dl 1.16 B7 五、發明説明(,) 本發明有關如申請專專利範圍第1或2項所述之在基 材上藉由反應性濺塗方法予Μ沈積金屬氧化物層之方法 ,Μ及藉此方法所生產之如申請專利範圍第3項之層糸 統的方法。 依照習用之方法以及在本文所述之方法,可知悉由單 一層所組成的層系統。藉由濺塗裝置,如D Ε 4 1 0 6 7 7 0所 述者,以陰極濺塗,較佳為磁陰極濺塗在基材上進行沈 積,其中所謂的作用靶極被設定於二個電極間的電漿中 體 氣 應 反 對 有 具対 (J.已 料在 材。 的物 標 合 塗化 測的 該上 中材 其基 且在 ,擊 中 法 方 塗 濺 之 撞該 Λ—/ 力如 和例 親{ 之· 電介调 二之 第謂 該所 ,用 極 使 電可 二亦 第 , 生地 產換 上替 材可 基。 及结 Μ 連 極置 電裝 一 護 了保 生流 產電 極與 靶極 極85 陰02 及38 極S-陽? 成DE 用如 達 , 地極 互電 交至 可送 其輸 ,地 極流 電交 或 流 直 為 可 流 電 述 02予 zn分 、 成 02鼷 T 金 、 之 °2物 zr合 、 化 3 述 前 、 於 °2應 S 對 如相 , 由 層係 電.極 積之 沈塗 了濺 為待 經濟部中央標準局員工消費合作社印製 / 即 r A ο , 或用題 °2作問 r/塗項 〜濺I 生的 發時 上行 t 靶實 U標之 雲屬法 漿金方 電在塗 ,7 測 1 者 · ^ ^ ^ 上i習 其Η知 siipB ,」 Μ 合 成y久 曰比 組、Γ長 ΚΝ2 之 化 子 離 的元 質學 品光 學或 光瓶 高璃 的玻 生在 產時 再式 可模 之塗 用濺 利DC 及在 用 。 運物 資層 可的 ^s坦 而平 業與 Η 匀 就均 、.環 02抗 si對 如 期 , 長 層之 電欲 介所發 的為揮 積作氣 沈非空 上並之 件而用 由 斧 ο 途 用 勺 白
因作瀨 ,生之 02發行 Ti上茛 是材以 別基得 特(5D式 或M.m 12^濺 A 境CVP (請先閲讀背面之注意事項再填寫本頁)
本紙張尺度適用中國國家標準(CNS ) Α4規格(210Χ 297公釐) 479076 修正 年月日 A7 __91 L U; . Bf _ 五、發明説明() 塗或沈積的技術有低濺塗速率及(因而産生之)高成本方 面的缺點,此時由沈積方法予以界定之方法參數被保持 穩定。更進一步而言,使用習知濺塗方法所生産之層条 統的光學性質並未充足。 本發明的課題為,提供一個藉由反應性濺塗方法在基 材上以濺塗引介生産金屬氧化物之方法,藉此,有高的 光學性質的金屬氣化物層係可再生産的,工業可低成本 製造的,且有利價值的。 經濟部中央標準局員工消費合作社印製 (請先閲讀背面之注意事項再填寫本頁) 依照本發明,該項課題藉由如申請專利範圍第1項所 述之前文已述的一般性方法予以解決,其中待濺塗之濺 塗標靶上發生作用的電漿充電,傺由至少二個彼此前後 排列之裝配於電漿反應室内的電極被傳輸至電導線,其 據估計傺以大於4m/s之層生成速率在待沈積之基材上沈 積氧化物層,其中在沈積時,待沈積之基材相對於待濺 塗之標的而言傺較為穩定地被安置的。就基材而言,其 在沈積方法進行時,傺沿著濺塗標靶被處理(如在Dur-chland裝置中被利用時),層生長速率被建議>40nm m/ min(如申請專利範圍第2項所逑)。如申請專利範圍第1 及2項所述之金屬氣化物層的生産方法,相較習用技術 所使用者,具有多種優點。依本發明方法所生産之Ti02 ,有2 · 5 5 - 2 · 6 0之間的破裂指數η。藉由習用之D C技術, 一般得到2 · 3 5 - 2 · 4 5之間的η值。有較高之破裂指數η之 金屬氧化物層表示·.能在較薄於習用金屬氧化物層下, 取得與之相當之關於破裂的作用。較薄之金屬氧化物層 本紙張尺度適用中國國家標準(CNS ) Α4規格(210X297公釐) 經濟部中央標準局員工消費合作社印製 479076 年月 日^ A) f j ^_ 五、發明説明() 有下列之優點:在可見光範圍内高的透光性及顔色中和 性。此外,較薄之金屬氣化物層,相較於習用之厚金屬 氧化物層,成本較低。 依照本發明所生産的層物有下列之優點,其如申請專 利範圍第3項所述為非常光滑的表面。依本發明所生産 之金屬氧化物層之表面形態結構,顯示非常密、結晶的 外觀,其對化學反應材料有抵抗力。本發明的金屬氧化 物層,與習用技術,如DC -電漿放電法所生産者相似,均 可抵抗濕潤作用。此外,其亦顯示:與藉由交流電蓮轉 之濺塗電漿一起應用時,所施處之Ti〇2層絶大部分結晶 成金紅石結構。相對於在DC -濺塗中Ti02層之主要的銳 鈦礦結構,鈦紅石結構的溫度穩定性至1855 °C,鋭鈦礦 結構在642 °C時經歴分相改變而不具穩定結構。此外,其 亦顯示:在本發明方法中,在相似之電漿導電性下,所 得之最大濺塗速率,相較於習用之DC -濺塗方法,高出 約6至7倍。 此外,依照本發明生産之金屬氧化物層,除了用以生 産改良的低E層糸統之外,亦可用於生産具有改良光學 特性之太陽控制層条統。就低E層而言,使下列之優點 成為可能:放棄作為標靶材料的鋅,使用價值較經濟之 鈦標靶。由於藉由濺塗方法所生産之Sn02層在生成相時 有傾向於島嶼結構(Inselbildung)之缺點,故使用Ti02 層取代S η 0 2層偽吾人所欲的。在低E層糸統中直接於基 材上生成之基層具有符合本發明之光滑、緊密結構的表 本紙婊尺度遢用中國國家標準(CNS ) A4規格(210X 297公釐) (請先閲讀背面之注意事項再填寫本頁) 訂 479076 A7 B7 五、發明説明(4 ) 面,表面上生成一合適的低E層,如銀或金層。依本發 明生產的基層表面的形態,有構成一具有高電導性及低 K值之金臛層的優點。 為了生產依照本發明之層物,較佳地係選擇交流頻率 為1 0 K H z至8 0 Κ Η z之濺塗電漿供給交流電,此如申請專利 範圍第8項所述。 本發明金鼷氧化物層之其他方法特徵及可能之應用, 在後述之申請專利範圍有更詳細之描述。 本發明包含各種實施例。更特定之實施例在圖式中及 下文中有更詳綑之描逑。 曬式簡單說明: 第la圖係習用技術所生產之Ti〇2層表面之屏幕電子顯 微鏡斜截面之R E Μ照片。 第1 b 係第1 a匾之Τ ί Ojj層部份之放大圖。 第2圖係第la及lb圖之Ti〇2層之X光光譜。 第3a圖係TiO,層之REM照其由21nm m/miri之動態 積層速度、與表面法線成6 0之觀察角予Μ沈積。 第3b圖為第3a圖之Ti〇2層之橫切面的REM照Η。 經濟部中央標準局員工消費合作社印製 (請先閱讀背面之注意事項再填寫本頁) 第4圖為第3 a及3 b圖之T i 0 2層的X光光譜。 第5a圖係以37nm m/inin之積層速度予以沈積之TiOg層 之R E Μ照Η 。 第5b圖係第5a圖之T i 層之橫切面之REM照Η。 第6圖係第5 a及5 b圖之Τ ί 層的X光光譜。 第7 a圖係藉由反應性濺塗方法,Μ 4 9 n m m / m i η之速度 本紙張尺度適用中國國家標準(CNS ) Α4規格(210Χ297公釐) 經濟部中央標準局員工消費合作社印製 479076 A7 B7 五、發明説明(,) 積層之Τ ί 0 2層的R E Μ照Η 。 第7 b圖係第7 a圖之T i 0層的R Ε Μ橫切面照Η。 第8圖係第7 a及7 b圖之T i 0 2層的X光光譜。 第9圖係D C高導陰極之特徵線。 第1 0圖係雙磁陰極之特徵線。 第1 1圖係作為本發明濺塗方法之探测壓功能而予以計 算之導體電流及濺塗速率。 一個由習用D C濺塗方法予K生產之T i 0 2層4 , 6 ,在第1 a 及1 b圖中分別Μ不同之倍率的R E Μ照Η進行描述。該TM 0 2 層係沈積於矽晶圓2之上,層厚度約5 0 0 n m。藉反應性 磁性濺塗方法,在添加Ar/Ο混合氣體下所生長之Ti〇2 層4 , 6 ,係由單一的、圓柱形之微結晶組成,微结晶彼此 間基本上互相平行地排列於基材上。T i 0 2層4 , 6的表面 具有外顯之表面粗縫度。第la及lb圖之Ti %層4,6之X光 光譜分析係如第2圖之德拜謝勒(D e b y e - S c h e r e r )圖。 在第2匾中為優勢彎曲折射之A 1、A 2及A 3係T ί 〇2銳鈦礦 结構之特徵。折射A 1代表銳鈦礦1 0 1 ,折射A 2代表銳钛 礦004,折射A3為銳紋礦112結構,並且Braggsche折射 條件滿足柵狀網路。 藉由如本發明方法所提供之2 1 n m n / s e c沈積速度的反 應性濺塗方法所生產之T i 〇2層,圖示於第3 a及3 b圖。厚 約5 0 0 η πι之T i 02層1 4 (見第3 b圖),相較於第1 b圖之層结 構,顯示出更為脆弱外覲的且局部限制的圓柱形狀生長 的T i 微結晶。第3 a圖之表面1 6顯示個別分離的表面範 -7- 本紙張尺度適用中國國家標準(CNS ) A4規格(210X297公釐) (請先閱讀背面之注意事項再填寫本頁)
經濟部中央標準局員工消費合作社印製 479076 A7 B7 五、發明説明(仏) 圍,其支配較小的粗糙度深度。第3 a及3 b圖之Τ ί 02層的 結晶組成物,係沈積於光滑基材上,並由德拜射勒圖( 第4圖)組成,其係已知銳鈦礦1 0 1結構(A 1 )旁之彎曲折 射ΙΠ ,而R 1符合結晶Τ ί 層金紅石結構中之1 1 0柵狀網 路上的B r a g g折射。金紅石結構符合第3 a圖中較小表面 粗縫度之範圍,相對地,銳鈦礦1 1 0结構係符合第3 a圖 之島嶼結構。 Μ 3 7 n m m / m i η之沈積速度被沈積於光滑基材上之T i 02 層2 4 , 2 6係如第5圖所示。相較於第3 a及3 b圖所示之T i 層14, 4,6,在較高之沈積速度下,仍生成個別分離之微 結晶島嶼結構。符合微结晶島嶼結構之圓柱形狀,在第 5 b圖之橫切面圖中出琨不多。此結果亦得由所附之X光 光譜(見第6圖)予Μ證明。在增高之I ( 2 0 )圖中佔優勢 之金紅石11 0結構確實地勝過銳鈦礦1 0 1結構。 相對較強烈之金紅石結構外觀在第7 a及7 b圖中可得知 。厚約5 0 0 n m,在光滑基材上沈積之Ti〇2層,幾乎完全 由金紅石結構組成,如同第8圖之X光光譜中所有之金 紅石1 1 0折射所導出者。Μ 4 9 n m m / m i η層生長速度被沈 積之T i 0 2層的表面3 6 ,幾乎為均勻平整的外觀,亦具有 個別分離之島嶼結構。Μ圓柱形狀生長之微结晶銳钛礦 結構,在第7 b圖之層橫切Η段中出現不多。 習用技術用之反應性濺塗方法及本發明用之濺塗方法 ,二者之基本差異,可由DC濺塗法之陰極特徵線(第9圖) 及A C濺塗法(第1 0圖)之比較予Μ取得。第9圖圖示由直 -8 - 本紙張尺度適用中國國家標準(CNS ) Α4規格(210Χ297公釐) (請先閱讀背面之注意事項再填寫本頁)
經濟部中央標準局員工消費合作社印製 479076 A7 B7 五、發明説明(7 ) 流電供給之高導陰極之特徵線,其中整合一鈦標靶。所 示者係濺塗室內之總壓,其為流入電漿反應室之〇混合 氣Μ之作用。P ( Μ )特徵線在工作點Μ 1及Μ 2之間具有過賸 迴路。Ml及M2之前半段中,DC陰極有二種可能之濺塗狀 態狀態,即在路徑W 1中行走之金屬濺塗狀態,和路徑W2 之氧化物濺塗狀態。在Ml及M2間的前半段中,Μ直流電 供給之陰極不可控制地由一模式跳換至另一模式。用Μ 得到高價值金屬氧化物層之穩定濺塗條件,因為第9圖 之P ( Μ )特徵線之過賸迴路前半段之緣故,僅在方法控制 裝置之幫肋下得Μ應用。為了在直流電供給之高導陰極 下取得最大濺塗速度,在範圍Μ 1内取得氧化量溢流之值 作為濺塗工作點,該值下金屬氧化物層得由氧化物模式 予Μ生產。 Μ本發明方式運轉之Μ交電供給之高導磁性陰極之特 徵線,示於第10圖。此圖精確地示出:存於工作點M3及 Μ 4前半段者僅係1 0 s c c m ,故因子7 ( F a k t 〇 r 7 )周圍係狹長 的,其如同習用濺塗法所形成者(見第9圖)◦
第11圖圖示經計算所得之濺塗速率Y s Ρ Μ及陰極導性L (在1 2 0 s c c m恆定氧氣供給流下),其作為本發明濺塗方 法之探測壓u5之功能。合適之測量方法,符合濺塗室内 較低量氧氣分流之高探測壓ϋ5。經觀察者係:探測壓u5 愈高,陰極的金鼷性燃燒愈大。氧氣量下降,提昇濺塗 速率,同時陰極導性下降(見曲線走向A)。為了調節測 塗過程,氧氣感測器被利用,其將探測壓Us運用成K -9- 本紙張尺度適用中國國家標準(CNS ) A4規格(210 X 297公釐) (請先閲讀背面之注意事項再填寫本頁)
、1T 479076 A7 B7 五、發明説明(分) 大 經發 者本 Mu f II此 見K ο 0 琨 ΒΙ0 I 實 II L 第性 如導 〇 極 路陰 迴的 節低 調由 之得 列 S 7[ burΜ 予 昇 提 實 確 應 效 濟 YS經 率之 速置 濺裝 之塗 昇濺 提明 (請先閲讀背面之注意事項再填寫本頁) 經濟部中央標準局員工消費合作社印製 本紙張尺度適用中國國家標準(CNS ) Α4規格(210X 297公釐)
Claims (1)
- 479076年月曰 314,-16 修正 六、申請專利範圍 第861 1 07 1 6號「干涉層系統」專利案 (91年1月修正) 六申請專利範圍: 1. 一種藉由反應性濺塗方法在基材上以濺塗誘發方式使沈 積金屬氧化物層之方法,其特徵爲:電漿放電係作用在 待噴鍍之灑塗標靶上,電功率係藉由電漿反應室內至少 二個前後相鄰配置之電極而傳送至電漿放電區,須選擇 此電功率之大小,使沈積於待塗佈之基材上的金屬氧化 物層以24nm/s之層生長速度被沈積,其中在沈積時,待 塗佈之基材相對於待噴鍍之標靶材料係固定地配置著, 其中電極係與交流電源之輸出端導電性聯接供電至電漿 放電區所需之交流電壓之頻率是選在ΙΟΚΗζ及80KHz之 間。 2. —種藉由反應性濺塗方法在基材上以濺塗誘發方式使沈 積金屬氧化物層之方法,其特徵爲:在待塗佈的基材上 即將沈積之氧化物層係以2 40nm m/min的層生長速度予 以沈積,其中待塗佈的基材運行至待噴霧之標靶材料之 前,其中電極係與交流電源之輸出端導電性聯接,供電 至電漿放電區所需之交流電壓之頻率是選在ΙΟΚΗζ及 80KHz之間。 3. —種光學作用層系統,係依照前述申請專利範圍第1或2 項之方法而製成且安置於基材表面上,此種層系統具有 由低折射或高折射之材料組成之單一層所形成的層序列, 其中在待塗佈之基材面上係藉由濺塗感應之噴霧及沈積 479076 六、申請專利範圍 方法於一真空室中單一氧化物層,且濺塗電漿藉由與電 漿電極連接之交流電壓予以供電,其特徵爲··氧化物層 之主要成份具有金紅石結構,其中供電至濺塗電極之交 流電流的交流頻率是在ΙΟΚΗζ至80ΚΗζ之間。 4.如申請專利範圍第3項之層系統,其中金層氧化物層以 >4nm/s之沈積速度被沈積於相對於濺塗陰極是靜止之標 靶上。 -2-
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DE19644752A DE19644752A1 (de) | 1996-10-28 | 1996-10-28 | Interferenzschichtensystem |
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TW479076B true TW479076B (en) | 2002-03-11 |
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TW086110716A TW479076B (en) | 1996-10-28 | 1997-07-28 | Interference layer system |
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US (2) | US6451178B2 (zh) |
EP (1) | EP0838535B1 (zh) |
JP (1) | JP4099252B2 (zh) |
KR (1) | KR100279110B1 (zh) |
DE (2) | DE19644752A1 (zh) |
ES (1) | ES2142645T3 (zh) |
TW (1) | TW479076B (zh) |
Cited By (1)
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CN100431995C (zh) * | 2003-01-28 | 2008-11-12 | 皇家飞利浦电子股份有限公司 | 制造具有金红石结构的透明氧化钛涂层的方法 |
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DE10140514A1 (de) | 2001-08-17 | 2003-02-27 | Heraeus Gmbh W C | Sputtertarget auf Basis von Titandioxid |
US20050092599A1 (en) * | 2003-10-07 | 2005-05-05 | Norm Boling | Apparatus and process for high rate deposition of rutile titanium dioxide |
EP1773729B1 (en) | 2004-07-12 | 2007-11-07 | Cardinal CG Company | Low-maintenance coatings |
US7737459B2 (en) * | 2004-09-22 | 2010-06-15 | Cree, Inc. | High output group III nitride light emitting diodes |
US8092660B2 (en) | 2004-12-03 | 2012-01-10 | Cardinal Cg Company | Methods and equipment for depositing hydrophilic coatings, and deposition technologies for thin films |
US7923114B2 (en) | 2004-12-03 | 2011-04-12 | Cardinal Cg Company | Hydrophilic coatings, methods for depositing hydrophilic coatings, and improved deposition technology for thin films |
US7989094B2 (en) | 2006-04-19 | 2011-08-02 | Cardinal Cg Company | Opposed functional coatings having comparable single surface reflectances |
US20080011599A1 (en) | 2006-07-12 | 2008-01-17 | Brabender Dennis M | Sputtering apparatus including novel target mounting and/or control |
JP2008216587A (ja) * | 2007-03-02 | 2008-09-18 | Canon Inc | Si酸化膜の形成方法、配向膜および液晶光学装置 |
JP2009007636A (ja) * | 2007-06-28 | 2009-01-15 | Sony Corp | 低屈折率膜及びその成膜方法、並びに反射防止膜 |
KR101563197B1 (ko) | 2007-09-14 | 2015-10-26 | 카디날 씨지 컴퍼니 | 관리 용이한 코팅 및 이의 제조방법 |
US8542424B2 (en) | 2008-09-05 | 2013-09-24 | Sumitomo Metal Mining Co., Ltd. | Black coating film and production method therefor, black light shading plate, and diaphragm, diaphragm device for light intensity adjustment, shutter using the same, and heat resistant light shading tape |
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1996
- 1996-10-28 DE DE19644752A patent/DE19644752A1/de not_active Withdrawn
-
1997
- 1997-07-17 EP EP97112245A patent/EP0838535B1/de not_active Expired - Lifetime
- 1997-07-17 DE DE59701086T patent/DE59701086D1/de not_active Expired - Lifetime
- 1997-07-17 ES ES97112245T patent/ES2142645T3/es not_active Expired - Lifetime
- 1997-07-28 TW TW086110716A patent/TW479076B/zh not_active IP Right Cessation
- 1997-08-29 KR KR1019970042524A patent/KR100279110B1/ko active IP Right Grant
- 1997-10-27 JP JP30943997A patent/JP4099252B2/ja not_active Expired - Lifetime
- 1997-10-28 US US08/959,633 patent/US6451178B2/en not_active Expired - Lifetime
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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CN100431995C (zh) * | 2003-01-28 | 2008-11-12 | 皇家飞利浦电子股份有限公司 | 制造具有金红石结构的透明氧化钛涂层的方法 |
Also Published As
Publication number | Publication date |
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DE59701086D1 (de) | 2000-03-09 |
KR19980032329A (ko) | 1998-07-25 |
EP0838535B1 (de) | 2000-02-02 |
ES2142645T3 (es) | 2000-04-16 |
JP4099252B2 (ja) | 2008-06-11 |
KR100279110B1 (ko) | 2001-01-15 |
US20010006148A1 (en) | 2001-07-05 |
US6451178B2 (en) | 2002-09-17 |
DE19644752A1 (de) | 1998-04-30 |
EP0838535A1 (de) | 1998-04-29 |
US20020070106A1 (en) | 2002-06-13 |
US6814839B2 (en) | 2004-11-09 |
JPH10130830A (ja) | 1998-05-19 |
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