TW466808B - Wavelength-locked external cavity lasers with an integrated modulator - Google Patents

Wavelength-locked external cavity lasers with an integrated modulator Download PDF

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Publication number
TW466808B
TW466808B TW089117850A TW89117850A TW466808B TW 466808 B TW466808 B TW 466808B TW 089117850 A TW089117850 A TW 089117850A TW 89117850 A TW89117850 A TW 89117850A TW 466808 B TW466808 B TW 466808B
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substrate
optical transmitter
transmitter module
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TW089117850A
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Chung-En Zah
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Corning Inc
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H01S5/0265—Intensity modulators
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/125—Distributed Bragg reflector [DBR] lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/14—External cavity lasers

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Description

^66 808 Α7 Β7 五 、發明説明（ 經濟部中央標準局員工消費合作社印製 發明領域： 本發明係關於雷射;特別是關於外部空腔雷射以使用 作為光學通訊之傳送器。技術背景： 在密集波長區分多工(DWDM)系統應用中，傳送器波長 必需鎖定於一個國際電話連盟（ITU)頻率表之標準波長以 符合串音規範以及確保系統在其使用壽命（約25年）内系統 之可靠操作《自由運作商業分配回授雷射之雷射波長決定 於所建立(DFB)光柵及半導體波導之折射率，隨著溫度改變 率為0. lnm/°C。圖11顯示出波長鎖定DFB雷射，由Nortel Technology所提及說明於B. viUeneuve，η. B. Kim, Μ. Cyr以及D. Gariepy之"A compact wavelength stabilization scheme for telecommunication transmitter” Digest of LEOS Suminer Topical Meetings, WDM Components Technology, WD2, 19-20, August 13-15, 1997, Montreal, Quebec, Canada。些微地發散雷射光線112光 束傳送通過Fabry Perot濾波器或單腔多層介電質濾波器 114藉由兩個間隔非常靠近光感測器116作為孔徑加以感測 。光感測器116相等地距離半導體光源雷射118中心線。每 一光感測器116捕獲不同然而重疊中央部份之總立體角度， 其由發散雷射光源發射出，當濾波器114加以對準以控制及 監測傳送波長。依據角度差值產生之波長偏移產生兩個不 同頻譜效應顯示於圖12中。使用差值或區別訊號222操作 之放大器以控制散熱座溫度以鎖定雷射波長為ITU波長或 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） ---Ίί ^^--1 — ^1.----；----訂----^ — 1 線一 (請先閲读背面之注意事項再填寫本頁) 4 6 6 Β Ο 8 五、發明説明（2 ) A7 B7 經濟#-中夹標準局員工消費合作社印製 中央頻率λ。。 ，圖12顯示出理想情況，其中兩個效應間之波長偏移大 約等於其有效頻寬使得巾央頻率錄則波長中央 。不過， 為了減低價格，需要消除操作放大器220以及光二極體Η6 之？·輕授部$，其為波長鎖定雷射溫度控制形式之 波長區分所·需要，同時保持或改善溫度重現性。 如圖13及14所示之濾波器鎖定外部空腔雷射目前已被 提出及加以示範。這些雷射並不需要回授控制以監測波長 ’因為由介電質材料製造出遽波器例如為光纖光栅及多層 "電質濾波器之中央波長已被證實對溫度較不靈敏(〈〇. 〇〇5 nm/ C)而小於DBF雷射中所使用半導體光栅濾波器。劃記 於光纖内反射Bragg光栅建立精確雷射波長。對Bragg光栅 選擇一個ITU表之頻率。將頻率劃記於矽石光纖之優點在 於小的熱膨脹係數(5x1 〇—V°C)以及共振Bragg頻率變化能 夠藉由溫度補償而忽略。 如圖13所示以及說明於美國第584492¾專利中，半導 體雷射二極體晶片118具有防止反射(AR)塗膜26於一個端 部小平面上，.其光學耦合一段光纖尾瓣134,其中存在肝峨 光柵反射器136,其界定出雷射空腔一個端部，另外一個端 部具有雷射晶片之反射端部小平面遠離AR塗膜端部小平面 。Bragg光柵反射器提供一種鎖定雷射頻率之方式。 並不使用光纖，空氣能夠替代於圖14外部空腔中。美 國第5434874以及5870417號專利說明增益介質例如為半導 體（雷射晶片）118具有前端138以及後端132小平面，如圖13 (請先閲讀背面之注意事項再填寫本頁} 11 _ f J. ! IT. — ^ί\--4—L----^------- 466 80 8 A7 B7 4 五、發明説明（3 ) 所不，其巾後端小平面132具有防止反射塗獅。由雷射曰曰曰 片發出光線142通過後端小平面132進人外部空氣空腔。凹 腔含有調整元件162例如為錄，反射鏡，紐器，或光柵， 其反射特定雷射波長㈣f射晶片118。該來碱線142作 用促使雷射輸出可選擇波長62經由前端小平面138。因而 由雷射晶片前端小平面發出光線輸出62波長能夠藉由改變 光栅’渡《或其他難元件162之肖度而加以控制。空腔 亦包含準直透鏡144,其導引由晶片後端小平面132發出光 線於光栅，遽'波器，或其他調整元件162。 一不過由於其㈣外部雜，歡舰酿法直接地以 。當外部被動空腔長度增加時3诎 調變頻寬將減小，如圖9所示。例如，彻·微米空腔長度 直接纖轉體頻寬約為聰z。因㈣2 5GHzj^及更高 頻率直接調變鎖定遽波器雷射為十分困難的，因為外部被 動空腔長㈣為1公分或更長。除此，相麟來回時間之頻 率（尖峰頻率)下直接調變效應顯著地提昇如圖15所示。尖 峰頻率為外部被動空腔紐之函軸示於酬_。假如尖 峰頻率接近W之-侧翻率，峨將失真。因而高速 率調變需要外部調變器。除此，存在至少一個節省費用理 由，其將外部空腔雷射與外部調變器形成一體。 發明大要： 本發明光學傳送ϋ，其具有鎖定渡波之優 點以及鎖定竦長雷射藉由改變外部空腔與外部調變赛整體 形成。外部空腔提供光線運行來回路徑。基質連接至外部 m m · 經濟部中央標半局員工消費合作社印製 ~^ M.--：--ifs--------1T------¢111i — (請先閲讀背面之注意事項再填寫本頁) 經濟部中央標準局員工消費合作社印製 6 6 8 0 8 A7 ------!Z____ 五、發明説明（令） . 空腔，其中至少一個增益元件以及光學調變器與基質整體. 形成。部份反射器亦與基質整體形成以及將至少一個增益 元件與光學調變器耦合。 s 本發明另外一項中，在增益元件與部份反射器之間包 含整體形，成輕胜萎^在另外一項中，基質具有第一防 止反射塗膜小平面之波導以及第二相對AR塗膜小平面於波 導相對兩端上。 本發明其他特性以及優點將詳細揭示下列說明中，其. 部份可立即由熟知此技術者了解或實施本發明詳細說明， 申請專利範圍，以及附圖而明瞭。 · 人們了解先前一般說明以及下列詳細說明僅作為本發 明之範例，以及提供一個架構以了解本發明原理及特性。 附圖在於提供更進一步說明本發明，以及在此加入構成本 發明說明書之一部份。附圖顯示出本發明各種特性以及實 施例，以及隨同說明書以解釋本發明之原理及操作。 附圖簡單說明： 第一圖（圖1)為本發明具有整體形成調變器之波長鎖 定外部空腔窜射圖式。 第二圖（圖2)為本發明具有整體形成調變器之波長鎖 定外部空腔雷射圖式，其具有圖1之部份反射器40,其實施 為姓刻小平面。 第三圖（圖3)為本發明具有整體形成調變器之波長鎖 定外部空腔雷射圖式，其具有圖1之部份反射器40,其實施 為波導迴路反射鏡。 本紙張尺度適用中國國家標準（CNS ) A4規格（210 X 297公釐） 7 (請先聞讀背面之注意事項再填寫本頁)
4 6 6 80 8 a? ------- B7 五、發明説明（f ) 經濟部中央標準局員工消費合作杜印裝 第四圖（圖4)為本發明具有整體形成調變器之波長鎖. 定外部空腔雷射圖式，其具有圖丨之部份反射器40,其實施 為分散Bragg反射器。 第五圖（圖5)為本發明具有整體形成調變器之模鎖定 外部空腔雷射圖式，其具有圖1之部份反射器4〇,其實施為 分散Bragg反射器。 第六圖（圖6)為本發明具有整體形成調變器以及波導 迴路之模鎖定外部空腔雷射圖式。 第七圖（圖7)為圖3波導迴路反射鏡404之示意圖。 第八圖（圖8)為本發明反射以及透射曲線圖為圖3波導 迴路反射鏡2x2耦合器交又比值之函數。 第九圖（圖9)為3dB調變頻寬曲線圖為圖13及14外部凹 腔雷射之外部被動性空腔長度函數。 第十圖（圖10)為尖峰頻率曲線圖為圖13及14外部空腔 雷射之外部被動性空腔長度函數。 第十一圖（圖11)為先前技術波長鎖定DFB雷射之示意 圖。 第十二_(圖12)為圖11空間中分離兩個光感測器116 之頻譜效應。 第十三圖（圖13)顯示出先前技術具有光纖作為外部凹 腔之渡波鎖定外部空腔雷射。 第十四圖（圖14)顯示出先前技術具有空氣作為外部凹 腔之渡波鎖定外部空腔雷射。 第十五圖（圖15)顯示出圖13及14外部空腔雷射之小訊 本紙張尺度適用中(210x 29兩 (請先閲讀背面之注意事項再填寫本頁)
-C 6 6 80 8
、發明説明（L〉 號調變效應之曲線圖。· 第十六圖（圖16)顯示出先前技術波長鎖定先前技術 波鎖疋，及本發明具有整體形成波長鎖定雷射之比較。 附圖元件數字符號說明： 、、光孥傳送器10;反射鏡11;空腔雷射12;調變器14; ^益及•件16;基質22, 24;小平面26;外部空腔32;被動 區^34;部份反射器40;小平面56;濾波器62;吸附器 72’雷射光線112;濾波器114;感測器116;雷射118;後 端小平面132;反射器136;前端138;光線142;透鏡 144;濾波器M2;訊號222;小平面402;反射鏡’404;反 射器406。 詳細說明： 現在針對本發明優先實施例詳細說明，其範例顯示於 附圖中，整個附圖中使用相同的參考數字係指相同的或類 似元件。本發明光學傳送器範例性實施例顯示於圖丨中，以 及以參考數字10表示。 經濟部中央椽準局員工消費合作，杜印製 本發明傳送器包含光學調變器14與濾波鎖定外部空腔 雷射12整體形成。整體形成方式係藉由改變主要濾波鎖定 外部空腔雷射以建立波長鎖定外部空腔雷射1〇，其傳統地 貫施如圖13及14所示以加入本發明整體形成調變器。 圖16顯示出可達威高速率調變之優點而不增加主動可 只現元件，其具有調變器整體形成於濾波鎖定外部空腔雷 射中。依據本發明說明，波長鎖定外部雷射將提供具有高 速率DWDM系鈍應用之整體形成調變器。本發明特性以及優

Claims (1)

  1. A8 B8 C8 D8 4 6 6 8 0 8 六、申請專利範圍 1. 一種光學傳送器模組，其包含 基質； 至少一個增益元件與基質整體形成； 光學調變器，與基質整體形成；以及 部份反射器，與基質整體形成以及至少一個增益元件與 光學調變器耦合。 一 2. 依據申請專利範圍第1項之光學傳送器模組，其中部份反 射器包含： 姓刻小平面。 3. 依據申請專利範圍第1項之光學傳送器模組，其中部份反 射器包含迴路反射鏡。 4. 依據申請專利範圍第1項之光學傳送器模組，其中部份反 射器包含分散Bragg反射器（DBR)反射鏡。 5·依據申請專利範圍第1項之光學傳送器模組，其中更進一 步包含： 可飽和吸收器與基質整體形成以及將至少一個增益元件 與部份反射器耦合。 經濟部中央標準局員工消費合作社印裝 6. 依據申請專利範圍第1項之光學傳送器模組，其中基質包 含具有第一防止反射(AR)塗膜小平面以及第二相反AR塗膜 小平面於波導相對端部之波導。’ 7. 依據申請專利範圍第6項之光學傳送器模組，其中光學調 變器包含一個吸收電能調變器元件位於部份反射器與第二 AR塗膜小平面之間。 8. 依據申請專利範圍第1項之光學傳送器模組，其中至少一 衣紙張尺度通用中國國家橾準（CNS ) A4规格（210Χ297公嫠） 6 4 6 80 8 _____D8 六、申請專利範園 長於歸主動層上以具有第—頻帶間隙波長 9. 依據申s月專利範圍第8項之光學傳送器模組，其中 變器成長於«上以具有第二頻帶間隙波長祕於至少一 個增益元件之第一頻帶間隙。 10. —種光學傳送器，其包含： 一個外部空腔以作為光線運行之來回路徑；-基質連接至外部空腔； 至少一個增益元件與基質整體形成； 一個光學調變器與基質整體形成； 部份反射器與基質整體形成以及將至少一個增益元件與 光學調變器耦合。 λ 3 11 (請先聞讀背面之注意事項再填寫本頁) 經濟部中央標隼局員工消費合作社印製 衣紙張尺度適用中國國家樣準（CNS ).A4規格（210X297公釐） ____^__________Κ----广.，-------訂 1-----Λ. / ： J>. • Lf Hi n n .^1 ί ι^ϋ I
TW089117850A 1999-08-31 2000-08-30 Wavelength-locked external cavity lasers with an integrated modulator TW466808B (en)

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EP (1) EP1218990A1 (zh)
JP (1) JP2003508927A (zh)
CN (1) CN1371539A (zh)
AU (1) AU5928500A (zh)
CA (1) CA2381046A1 (zh)
TW (1) TW466808B (zh)
WO (1) WO2001017077A1 (zh)

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