CN1371539A - 带有集成调制器的波长锁定外腔激光器 - Google Patents
带有集成调制器的波长锁定外腔激光器 Download PDFInfo
- Publication number
- CN1371539A CN1371539A CN00812210.5A CN00812210A CN1371539A CN 1371539 A CN1371539 A CN 1371539A CN 00812210 A CN00812210 A CN 00812210A CN 1371539 A CN1371539 A CN 1371539A
- Authority
- CN
- China
- Prior art keywords
- substrate
- wavelength
- optical
- modulator
- transmitter module
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000003287 optical effect Effects 0.000 claims abstract description 42
- 239000000758 substrate Substances 0.000 claims abstract description 30
- 230000003667 anti-reflective effect Effects 0.000 claims description 14
- 238000005530 etching Methods 0.000 claims description 6
- 230000008878 coupling Effects 0.000 claims description 5
- 238000010168 coupling process Methods 0.000 claims description 5
- 238000005859 coupling reaction Methods 0.000 claims description 5
- 239000006096 absorbing agent Substances 0.000 claims description 4
- 239000006117 anti-reflective coating Substances 0.000 claims 1
- 230000000644 propagated effect Effects 0.000 claims 1
- 230000008901 benefit Effects 0.000 abstract description 7
- 230000010354 integration Effects 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 11
- 241000931526 Acer campestre Species 0.000 description 8
- 238000005516 engineering process Methods 0.000 description 7
- 239000013307 optical fiber Substances 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 230000004044 response Effects 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 230000003595 spectral effect Effects 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 239000004744 fabric Substances 0.000 description 2
- 239000000835 fiber Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000002310 reflectometry Methods 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 230000005619 thermoelectricity Effects 0.000 description 2
- 238000004891 communication Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 238000005728 strengthening Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
- H01S5/0265—Intensity modulators
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
- H01S5/125—Distributed Bragg reflector [DBR] lasers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/14—External cavity lasers
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Abstract
揭示一种具有滤波器锁定和波长锁定激光器两者优点的光发射器,其办法是为集成光调制器(14)而改进外腔(32)。外腔(32)为光传播提供了全程反射路径。把衬底(24)与外腔(32)相连接,至少一个增益元件(16)和光调制器(14)与衬底(24)构成一体。局部反射器(40)也与衬底(24)构成一体,并使至少一个增益元件(16)与光调制器(14)耦合。
Description
发明背景
技术领域
本发明一般涉及激光器,尤其涉及在光通信中用作发射器的外腔激光器。
技术背景
在密集型波分多路复用(DWDM)系统的应用中,发射器波长必须锁定在国际电话联合会(ITU)网的ITU标准波长中的一个波长,以满足串扰规范,并确保系统在其寿命(约25年)内可靠运行。自由交易的分布式反馈(DFB)激光器的激光波长是由其内置DFB光栅和半导体波导的折射率所决定的,该激光波长以0.1nm/℃的速率随温度变化。图11示出了一个由Nortel Technology示范的波长锁定的DFB激光器,B.Villeneuve,H.B.Kim,M.Cyr和D.Gariepy等人在题为“A Compact Waveleugth Stabilization Scheme For TelecommunicationTransmitter”的文章中对此作了描述,Digest of the LEOS Summer TopicalMeeting,WDM Components Technology,WD2,19-20,August 13-15,1997,Nontreal Quebec,Canada。一束略微发散的激光112通过法布里—珀罗滤波片或单腔多层电介质滤波器114,由两个间隔很近的、起着孔径作用的光探测器116进行探测。两个光探测器116离半导体激光源118的中心线等间距。因为滤波器114经对准用以控制和监测发射波长,所以每只光探测器116捕获到由发散激光源发出的总立体角中不同的但是重叠的中心部分。如图12所示,产生了两个不同的光谱响应,即根据其角差发生了波长偏移。运算放大器220用差值或鉴别信号222来控制散热器温度,以便把激光波长锁定到ITU波长或中心频率λ0。
图12示出了理想的情况,在这个情况中,两个响应之间的波长偏差粗略地等于其有效带宽,致使中心频率位于ITU波长的中心。但是,为了降低成本,希望去除在这种对波长锁定激光器进行温度控制的形式下用运算放大器220和光电二极管116作波长鉴别所需要的额外外部反馈部件,同时维持或改善温度可靠性。
示于图13和图14的滤波器锁定的外腔激光器已经在最近被提出和示范。这些激光器不需要反馈控制来监测波长,因为已被证明,由电介质制作的滤波器(诸如光纤光栅和多层电介质滤波器)的中心波长对温度的灵敏度(<0.005nm/℃)小于DFB激光器中所用半导体光栅滤波器对温度的灵敏度。写在光纤中的反射型布喇格光栅建立了精确的激光波长。为布喇格光栅选ITU网中的一个频率。把该频率写入石英光纤的好处是:石英具有较小的热膨胀系数(约5×10-7/℃),而通过温度补偿可以使谐振布喇格频率的变化忽略不计。
由图13可见,以及如美国专利第5,844,926号所述,半导体激光二极管芯片118在一端小平面132上具有一层减反射(AR)涂层26,小平面132与一段光纤尾纤134光学耦合,尾纤上有一布喇格光栅反射器136,它限定了激光器光学腔的一端,而另一端则由激光器芯片中远离AR涂覆端小平面的反射端小平面138所形成。因此,此布喇格反射器提供了锁定激光器频率的一个手段。
在图14的外腔中,用空气代替了光纤。在这里,以及如美国专利第5,434,874号和美国专利第5,870,417号所描述的,与图13一样,诸如半导体(激光器芯片)118等增益介质具有正面小平面138和背面小平面132两者,其中背面小平面132具有减反射涂层26。来自激光器芯片的光142通过背面小平面132进入外部空气腔。该空气腔包括诸如三棱镜、反射镜、滤波器或光栅等调谐元件162,此元件把具体的激光波长反射回到激光器芯片118。此述光的全程行为142使得激光器通过正面小平面138输出可选择的波长62。因此,通过改变光栅、滤波器或其它调谐元件162的角度可以控制从激光器芯片之正面小平面138输出的光波长62。该腔体还包括准直透镜144,它把芯片背面小平面132发射来的光引导到光栅、滤波片或其它调谐元件162上。
但是,由于其外腔较长,所以不能以高比特率直接调制此滤波器锁定的激光器。由图9可见,随着外部无源腔体长度的增加,3dB调制带宽减小。例如,腔体长度为300μm的半导体激光器具有约为10GHz的调制带宽。因此,难以用2.5Gbit/sec或更大速率直接调制滤波器锁定的激光器,因为外部无源腔的长度在1cm或更长的量级。另外,如图15所示,在对应于全程反射时间的频率(峰值频率)上的直接调制响应明显加强。图10示出了作为外部无源腔体长度之函数的峰值频率。如果峰值频率接近于信号谐频中的一个频率,则该信号将会失真。因此,需要用外部调制器进行高速调制。另外,至少存在一个节约成本的理由,需要将外腔激光器与外部调制器集成为一体。
发明概述
本发明的一个方面是一种光发射器,从把外腔改进为外部集成调制器而认识到这种发射器发射器提供滤波器锁定的和波长锁定的激光器的两种好处。外腔为光的传播提供多次反射的路径。把衬底连接到外腔,在衬底上至少有一个增益元件的该光调制器与衬底集成,局部反射器也与该衬底集成并与至少一个增益元件连同光调制器一起耦合。
在另一方面,本发明包括在增益元件和局部反射器之间集成的可饱和的吸收器。在本发明的还有一个方面,该衬底是一波导,它具有第一减反射(AR)涂覆小平面和在波导的对面端处第二对向的AR底膜层小平面。
本发明的另外的特性和优点将在后面作详细描述,而在本技术领域中的科技人员,对部分内容从描述中将会容易地了解的,或者像下面描述的那样,包括随后的详细描述,所提的权利与要求,还有附图来实施本发明而得到认可。
要知道,前面的一般描述和后面的详细描述都是本发明的示范性内容,这是为了解本发明的性质和特性,用来提供概述和框架,正如所提的权利与要求那样。附图被包括在内以提供对本发明的进一步了解,而在比引入并构成本说明书的一个部分。这些图说明了本发明的各种实施例,并与描述在一起起到了解释本发明的原理与操作的作用。
附图简述
图1是按照本发明的具有集成调节器的波长锁定的外腔激光器的图解图;
图2是带有一集成调制器的波长锁定的外腔激光器,具有图1的局部反射器40,按照本发明以蚀刻小平面的形式来实施的图解图;
图3是带有一集成调制器的波长锁定的外腔激光器,具有图1的局部反射器40,按照本发明以波导环形反射镜形式来实施的图解图;
图4是带有一集成调制器的波长锁定的外腔激光器,具有图1的局部反射器40,按照本发明的以分布式布喇格反射器的形式来实施的图解图;
图5是按照本发明的带有一集成调制器和一腐蚀的小平面的模式锁定的外腔激光器的图解图;
图6是按照本发明的带有一集成调制器和一波导环形反射镜的模式锁定的外腔激光器的图解图;
图7是图3的波导环形反射镜404的示意图;
图8是反射率和透射率作为图3的波导环404的2×2耦合器交叉比率函数的图;
图9是3-dB调制带宽作为图13和14的外腔激光器的外部无源腔体长度函数的图;
图10是峰值频率作为图13和14的外腔激光器的外部无源腔体长度函数的图;
图11是目前技术的波长锁定的DFB激光器的示意图;
图12是来自在空间被分隔的图11的两只光探测器的光谱响应;
图13是目前技术的滤波器锁定的外腔激光器,它具有光纤作为它的外腔的图解图。
图14是目前技术的滤波器锁定的外腔激光器,它具有空气作为它的外腔的图解图。
图15是图13和14的外腔激光器的小信号调制响应图。
图16是展示在目前技术的波长锁定,目前技术的滤波器锁定,和本发明的带有集成调制器的波长锁定的激光器之间的比较图表。
较佳实施例的详细描述
现在将对本发明几个较佳的实施例进行详细描述,在附图中用图解说明了它们的例子。在整个附图中,在任何可能之处,相同的参考标号代表相同的或类似的部件。图1例示了本发明光发射器的一个实施例,它始终用参考标号10来表示。
按照本发明,本发明发射器包括与用滤波器锁定的外腔激光器12集成的光调制器14。除为了增添本发明集成调制器之外,此集成方法还修改了如图13与14常规使用的基础性滤波器锁定外腔激光器,构筑了波长锁定的外腔激光器。
图16示出了在不增加有源反馈元件的情况下通过在滤波器锁定的外腔激光器中集成调制器可实现高速调制的一些优点。按照本发明的原理,波长锁定的外部激光器装备了一集成调制器,可供高速DWDM系统应用。图16将其创造性特征和优点与其它常规方法作了比较和概括。由于这种发射器去除了有源反馈控制的昂贵元件,将其波长锁定在ITU波长,并且去除了分离的用于高速调制的外部调制器,所以用带有集成调制器的波长锁定外部激光器所形成的发射器对于DWDM系统积分器非常有吸引力。
正如在这里实施的以及图1所示的,参考图13和14的相似部件,外腔激光器12在半导体波导衬底或芯片24的第一部分上至少包括一个增益元件16,其中芯片24的第一减反射(AR)涂覆小平面26与外腔32耦合,以提供激光器光谱性质或激光效应,不增加有源反馈。通过延伸波导衬底24来形成第二衬底部分34,就能实现本发明的优点。正如在这里实施的且示于图1的,调制器14包括诸如电吸收或Mach-Zehnder调制器等的调制元件,它生长在衬底24之第二部分或无源区34上,位于局部反射器40和波导衬底24之激光输出端的第二减反射(AR)涂覆小平面56之间,用以提供高速调制器。衬底24之第二部分34的其余部分包括局部反射器40和有创造性的AR涂覆小平面56,其中局部反射器40最好是宽带。
按照本发明,要求部分发射器40形成一个经改进的、延伸的激光器腔体的一端。改进型延伸腔体的另一端通常是由一外部反射器或外部反射镜11提供的,如果在一空气腔内,所述外部反射器11最好是图2中的外部波长选择滤波器或其它调谐元件162,如果在一光纤腔内,则所述外部反射器11最好是图13中的布喇格光栅反射器136。局部反射器40作为到达调制器14的一个输出端,起发射部分光的作用。另外,相对于诸如外部波长选择反射器162或光栅等外部反射器或反射镜11的带宽来说,局部反射器40是宽带的,使得激光波长唯一地由波长选择滤波器162或布喇格光栅的布喇格波长所决定。
为了在单芯片或衬底24上对光62作外部调制,建立了宽带的局部反射器40,它插入在波导衬底芯片24的增益元件16和调制器14之间。第一衬底部分22上的增益元件16作为外腔激光器12的一部分,具有一个带隙波长为1570nm的有源层。如果利用电吸收调制器,第二段34上的调制器14在波导区具有一个层,其带隙波长为1490nm。通过电吸收调制器14,利用电吸收效应对光进行调制。在零偏压下,光通过调制器14,几乎没有衰减。在负偏压下,由于调制器14的带隙发生红移,所以光被吸收。激光器16的输出在波导24的调制器一侧或一端取得。在两上端部小平面26和56上最好施加减反射(AR)涂层,以防止由潜在的组合腔效应而造成的频谱劣化。用于形成这两个衬底部分22和34的制造工艺已被用来建立集成调制器的DFB激光器,正如在文章“Performance study of a 10-wavelength DFB laser array with integratedelectroabsorption modulators”中描述的,此文刊于Proc.of IEEE Lasers andElectro-Optics Society Annual Meeting,ThI2,Boston,MA,1996年11月18-21日。
图2和3示出了局部宽带反射器40各种实施例中的至少两种方法。这种带宽的内部局部反射器是由蚀刻小平面(图2)或波导环形反射镜(图3)形成的。尽管图2的蚀刻小平面非常小,但其制造很复杂。可以用一种良好的干蚀刻工艺来制造合适的反射镜,并进行尺寸精度控制,以获得低插入损耗,提供精确的分束比。
在本发明的另一实施例中,正如在这里实施且示于图3的,图1的内部反射器40是一波导环形反射镜404。如图7和8所示,波导环形反射镜的反射率和透射率受2×2耦合器的分束比的控制。虽然图3的环形反射镜比图2的蚀刻小平面大,但是环形反射镜易于制造。在上面的两个方法中,由于激光波长由温度灵敏度非常低的图1窄带外部反射器、滤波器、反射镜11或图14和图3中另一种调谐元件162所决定的,所以不需要热电(TE)冷却(例如,采用散热器)和温度控制。
在本发明的另一个实施例中,正如在这里实施且示于图4的,内部局部反射器是一分布式布喇格反射器(DBR)406。
例子
用下面用来作为本发明的示范的例子,将使本发明被阐明得更清楚。例1
图1的窄带内部局部反射器40是用图4中无源波导区34内的分布式布喇格反射器(DBR)406提供的。反射带宽可以写成 其中κ是光栅耦合杂数,λ是波长,而n是折射率。假设λ=1.55μm和κ=100/cm,则反射带宽约为2nm。激光波长由带宽远比内部DBR反射器406窄的外部滤波器62决定。在这个方法中,芯片制造工艺与集成调制器DFB激光器的制造工艺完全一样,但光栅被安置在波导34层的部分上,而不是安置在有源层22的顶上。由于内部反射带很窄,所以需要把芯片温度控制在±10℃,以保证内部反射带与外部滤波器162的中心波长交叠。但是,为提供有源反馈所做的波长监控不需要了。
在另一实施例中,正如在这里实施且示于图5和6的,光发射器还包括与增益元件16一样生长在同一有源层上的可饱和吸收器72,它位于增益元件16与局部反射器之间,其中局部反射器可以是图5中的蚀刻小平面402形式、图6中的环形反射镜形式,或者任何其它合适的局部反射器形式。现在改进图5和6的波长锁定激光器,以制成模式锁定的激光器。还可以实施如上所述的制造工艺,用一集成调制器构造这种模式锁定激光器,用于时分多路复用(TDM)系统应用。与增益元件16一样被制作或生长在有源层上的可饱和吸收器72集成在芯片上,以光在外腔32内的全程反射时间所确定的速率启动模式锁定。于是,集成调制器14调制反复的窄脉冲,发射信号。将在时域中交错来自若干模式锁定激光器的输出,以提高总的信息通过量。因此,通过去除分立调制器通常所需的光引出端,明显节约了成本。
对于本领域普通技术人员来说,根据所需外腔激光器的类型对本发明外腔32作出修改和变化是显而易见的。例如,图1-6的外腔可以由图13的光纤腔而不是空气腔来完成。
对于本领域技技人员来说,在不背离本发明精神和范围的情况下,可以对本发明作各种修改和变化。因此,只要它们包括在所附的权利要求书及其等效技术方案的范围内,本发明试图覆盖这些修改和变化。
Claims (10)
1.一光发射器模块,其特征在于,包括:
衬底;
至少一个增益元件,它与衬底构成一体;
光调制器,它与衬底构成一体;以及
局部反射器,它与衬底构成一体,并使所述至少一个增益元件与光调节器耦合。
2.如权利要求1所述的光发射器模块,其特征在于,包括:一蚀刻小平面。
3.如权利要求1所述的光发射器模块,其特征在于,所述局部反射器包括一环形反射镜。
4.如权利要求1所述的光发射器模块,其特征在于,所述局部反射器包括一分布式布喇格反射器反射镜。
5.如权利要求1所述的光发射器模块,其特征在于,还包括:
可饱和吸收器,它与衬底构成一体,并使所述至少一个增益元件与局部反射器耦合。
6.如权利要求1所述的光发射器模块,其特征在于,所述衬底包括一波导,该波导两端具有第一减反射涂覆小平面和相对的第二沽反射涂覆小平面。
7.如权利要求6所述的光发射器模块,其特征在于,所述光调制器在局部反射器和第二减反射涂覆小平面之间包括一电吸收调制器元件。
8.如权利要求1所述的光发射器模块,其特征在于,至少一个增益元件生长在衬底的有源层上,具有第一带隙波长。
9.如权利要求8所述的光发射器模块,其特征在于,所述光调制器生长在衬底上,具有比至少一个增益元件之第一带隙波长短的第二带隙波长。
10.一光发射器,其特征在于,包括:
外腔,它为光传播提供全程反射路径;
衬底,它与外腔相连;
至少一个增益元件,它与衬底构成一体;
光调制器,它与衬底构成一体;
局部反射器,它与衬底构成一体,并使所述至少一个增益元件与光调制器耦合。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/386,621 US6295308B1 (en) | 1999-08-31 | 1999-08-31 | Wavelength-locked external cavity lasers with an integrated modulator |
US09/386,621 | 1999-08-31 |
Publications (1)
Publication Number | Publication Date |
---|---|
CN1371539A true CN1371539A (zh) | 2002-09-25 |
Family
ID=23526366
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN00812210.5A Pending CN1371539A (zh) | 1999-08-31 | 2000-07-11 | 带有集成调制器的波长锁定外腔激光器 |
Country Status (8)
Country | Link |
---|---|
US (1) | US6295308B1 (zh) |
EP (1) | EP1218990A1 (zh) |
JP (1) | JP2003508927A (zh) |
CN (1) | CN1371539A (zh) |
AU (1) | AU5928500A (zh) |
CA (1) | CA2381046A1 (zh) |
TW (1) | TW466808B (zh) |
WO (1) | WO2001017077A1 (zh) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101416426B (zh) * | 2006-03-02 | 2012-12-12 | 菲尼萨公司 | 具有集成光滤波器的直接调制激光器 |
CN111865426A (zh) * | 2020-07-20 | 2020-10-30 | 成都优博创通信技术有限公司 | 一种光谱对准方法、装置、发射机及光网络系统 |
CN112531457A (zh) * | 2020-11-30 | 2021-03-19 | 联合微电子中心有限责任公司 | 片上扫频光源和使用其的相控阵 |
CN113300212A (zh) * | 2020-02-24 | 2021-08-24 | 中国科学院苏州纳米技术与纳米仿生研究所 | 一种芯片级调频激光装置 |
Families Citing this family (83)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2360603A (en) * | 2000-03-20 | 2001-09-26 | Cambridge 3D Display Ltd | Planar optical waveguide and float glass process |
US7190705B2 (en) | 2000-05-23 | 2007-03-13 | Imra America. Inc. | Pulsed laser sources |
US7167651B2 (en) * | 2000-09-26 | 2007-01-23 | Celight, Inc. | System and method for code division multiplexed optical communication |
WO2002063372A1 (en) * | 2001-01-16 | 2002-08-15 | Santur Corporation | Tunable optical device using a scanning mems mirror |
TW493092B (en) * | 2001-03-20 | 2002-07-01 | Hon Hai Prec Ind Co Ltd | Structure of adjusting of central wavelengths of optical filters using in a DWDM system and method of the same |
US6922278B2 (en) | 2001-03-30 | 2005-07-26 | Santur Corporation | Switched laser array modulation with integral electroabsorption modulator |
US6781734B2 (en) | 2001-03-30 | 2004-08-24 | Santur Corporation | Modulator alignment for laser |
AU2002254522A1 (en) | 2001-03-30 | 2003-11-11 | Santur Corporation | High speed modulation of arrayed lasers |
US6813300B2 (en) | 2001-03-30 | 2004-11-02 | Santur Corporation | Alignment of an on chip modulator |
US6751014B2 (en) * | 2001-06-19 | 2004-06-15 | International Business Machines Corporation | Automatic gain control and dynamic equalization of erbium doped optical amplifiers in wavelength multiplexing networks |
US6956886B1 (en) | 2001-11-02 | 2005-10-18 | Patel C Kumar N | Discreetly tunable semiconductor laser arrangement for wavelength division multiplex communication systems |
GB0206228D0 (en) * | 2002-03-16 | 2002-05-01 | Intense Photonics Ltd | Folded integrated laser modulator |
TW580547B (en) * | 2002-11-11 | 2004-03-21 | Delta Electronics Inc | Tunable light source module |
US7065112B2 (en) * | 2003-05-12 | 2006-06-20 | Princeton Optronics, Inc. | Wavelength locker |
US7573928B1 (en) | 2003-09-05 | 2009-08-11 | Santur Corporation | Semiconductor distributed feedback (DFB) laser array with integrated attenuator |
JP2005135956A (ja) * | 2003-10-28 | 2005-05-26 | Mitsubishi Electric Corp | 半導体光増幅器およびその製造方法ならびに光通信デバイス |
US7257142B2 (en) * | 2004-03-29 | 2007-08-14 | Intel Corporation | Semi-integrated designs for external cavity tunable lasers |
US20060140228A1 (en) * | 2004-12-28 | 2006-06-29 | Mcdonald Mark E | Semi-integrated designs with in-waveguide mirrors for external cavity tunable lasers |
WO2006131988A1 (en) * | 2005-06-08 | 2006-12-14 | Nec Corporation | Optical integrated device |
US7809222B2 (en) * | 2005-10-17 | 2010-10-05 | Imra America, Inc. | Laser based frequency standards and their applications |
US8457168B2 (en) * | 2006-01-11 | 2013-06-04 | Nec Corporation | Semiconductor laser, module and optical transmitter |
JP5028805B2 (ja) | 2006-01-23 | 2012-09-19 | 富士通株式会社 | 光モジュール |
US9867530B2 (en) | 2006-08-14 | 2018-01-16 | Volcano Corporation | Telescopic side port catheter device with imaging system and method for accessing side branch occlusions |
US7508858B2 (en) * | 2007-04-30 | 2009-03-24 | The Research Foundation Of State University Of New York | Detuned duo-cavity laser-modulator device and method with detuning selected to minimize change in reflectivity |
US9596993B2 (en) | 2007-07-12 | 2017-03-21 | Volcano Corporation | Automatic calibration systems and methods of use |
US10219780B2 (en) | 2007-07-12 | 2019-03-05 | Volcano Corporation | OCT-IVUS catheter for concurrent luminal imaging |
EP2178442B1 (en) | 2007-07-12 | 2017-09-06 | Volcano Corporation | Catheter for in vivo imaging |
US9054480B2 (en) | 2009-08-06 | 2015-06-09 | Neophotonics Corporation | Small packaged tunable traveling wave laser assembly |
US8923348B2 (en) | 2009-08-06 | 2014-12-30 | Emcore Corporation | Small packaged tunable laser assembly |
US20110033192A1 (en) * | 2009-08-06 | 2011-02-10 | Emcore Corporation | Small Packaged Tunable Optical Transmitter |
US9337611B2 (en) | 2009-08-06 | 2016-05-10 | Neophotonics Corporation | Small packaged tunable laser transmitter |
US8462823B2 (en) * | 2009-08-06 | 2013-06-11 | Emcore Corporation | Small packaged tunable laser with beam splitter |
KR101394965B1 (ko) * | 2010-10-14 | 2014-05-16 | 한국전자통신연구원 | 파장 가변 외부 공진 레이저 발생 장치 |
US11141063B2 (en) | 2010-12-23 | 2021-10-12 | Philips Image Guided Therapy Corporation | Integrated system architectures and methods of use |
US11040140B2 (en) | 2010-12-31 | 2021-06-22 | Philips Image Guided Therapy Corporation | Deep vein thrombosis therapeutic methods |
US9502858B2 (en) | 2011-07-14 | 2016-11-22 | Applied Optoelectronics, Inc. | Laser array mux assembly with external reflector for providing a selected wavelength or multiplexed wavelengths |
US9002214B2 (en) | 2011-07-14 | 2015-04-07 | Applied Optoelectronics, Inc. | Wavelength-selectable laser device and apparatus and system including same |
US9360630B2 (en) | 2011-08-31 | 2016-06-07 | Volcano Corporation | Optical-electrical rotary joint and methods of use |
US9214790B2 (en) * | 2012-10-03 | 2015-12-15 | Applied Optoelectronics, Inc. | Filtered laser array assembly with external optical modulation and WDM optical system including same |
US10568586B2 (en) | 2012-10-05 | 2020-02-25 | Volcano Corporation | Systems for indicating parameters in an imaging data set and methods of use |
US9307926B2 (en) | 2012-10-05 | 2016-04-12 | Volcano Corporation | Automatic stent detection |
US9324141B2 (en) | 2012-10-05 | 2016-04-26 | Volcano Corporation | Removal of A-scan streaking artifact |
WO2014055880A2 (en) * | 2012-10-05 | 2014-04-10 | David Welford | Systems and methods for amplifying light |
US9286673B2 (en) | 2012-10-05 | 2016-03-15 | Volcano Corporation | Systems for correcting distortions in a medical image and methods of use thereof |
US11272845B2 (en) | 2012-10-05 | 2022-03-15 | Philips Image Guided Therapy Corporation | System and method for instant and automatic border detection |
US9858668B2 (en) | 2012-10-05 | 2018-01-02 | Volcano Corporation | Guidewire artifact removal in images |
US9367965B2 (en) | 2012-10-05 | 2016-06-14 | Volcano Corporation | Systems and methods for generating images of tissue |
US10070827B2 (en) | 2012-10-05 | 2018-09-11 | Volcano Corporation | Automatic image playback |
US9292918B2 (en) | 2012-10-05 | 2016-03-22 | Volcano Corporation | Methods and systems for transforming luminal images |
EP2722398B1 (en) | 2012-10-18 | 2017-07-12 | F. Hoffmann-La Roche AG | Dual probe assay for the detection of HCV |
US9840734B2 (en) | 2012-10-22 | 2017-12-12 | Raindance Technologies, Inc. | Methods for analyzing DNA |
EP2931132B1 (en) | 2012-12-13 | 2023-07-05 | Philips Image Guided Therapy Corporation | System for targeted cannulation |
CA2895770A1 (en) | 2012-12-20 | 2014-07-24 | Jeremy Stigall | Locating intravascular images |
US11406498B2 (en) | 2012-12-20 | 2022-08-09 | Philips Image Guided Therapy Corporation | Implant delivery system and implants |
US10939826B2 (en) | 2012-12-20 | 2021-03-09 | Philips Image Guided Therapy Corporation | Aspirating and removing biological material |
CA2895502A1 (en) | 2012-12-20 | 2014-06-26 | Jeremy Stigall | Smooth transition catheters |
US10942022B2 (en) | 2012-12-20 | 2021-03-09 | Philips Image Guided Therapy Corporation | Manual calibration of imaging system |
EP2934310A4 (en) | 2012-12-20 | 2016-10-12 | Nathaniel J Kemp | RECONFIGURABLE OPTICAL COHERENCE TOMOGRAPHY SYSTEM BETWEEN DIFFERENT IMAGING MODES |
WO2014100162A1 (en) | 2012-12-21 | 2014-06-26 | Kemp Nathaniel J | Power-efficient optical buffering using optical switch |
WO2014099763A1 (en) | 2012-12-21 | 2014-06-26 | Jason Spencer | System and method for graphical processing of medical data |
US10993694B2 (en) | 2012-12-21 | 2021-05-04 | Philips Image Guided Therapy Corporation | Rotational ultrasound imaging catheter with extended catheter body telescope |
JP2016501625A (ja) | 2012-12-21 | 2016-01-21 | ジェローム マイ, | 可変線密度での超音波撮像 |
CA2895940A1 (en) | 2012-12-21 | 2014-06-26 | Andrew Hancock | System and method for multipath processing of image signals |
WO2014100530A1 (en) | 2012-12-21 | 2014-06-26 | Whiseant Chester | System and method for catheter steering and operation |
US9612105B2 (en) | 2012-12-21 | 2017-04-04 | Volcano Corporation | Polarization sensitive optical coherence tomography system |
US10058284B2 (en) | 2012-12-21 | 2018-08-28 | Volcano Corporation | Simultaneous imaging, monitoring, and therapy |
CA2896006A1 (en) | 2012-12-21 | 2014-06-26 | David Welford | Systems and methods for narrowing a wavelength emission of light |
US9486143B2 (en) | 2012-12-21 | 2016-11-08 | Volcano Corporation | Intravascular forward imaging device |
WO2014115330A1 (ja) * | 2013-01-28 | 2014-07-31 | 富士通株式会社 | レーザ装置、光変調装置及び光半導体素子 |
EP2965263B1 (en) | 2013-03-07 | 2022-07-20 | Bernhard Sturm | Multimodal segmentation in intravascular images |
US10226597B2 (en) | 2013-03-07 | 2019-03-12 | Volcano Corporation | Guidewire with centering mechanism |
US20140276923A1 (en) | 2013-03-12 | 2014-09-18 | Volcano Corporation | Vibrating catheter and methods of use |
EP2967391A4 (en) | 2013-03-12 | 2016-11-02 | Donna Collins | SYSTEMS AND METHODS FOR DIAGNOSING CORONARY MICROVASCULAR DISEASE |
US11026591B2 (en) | 2013-03-13 | 2021-06-08 | Philips Image Guided Therapy Corporation | Intravascular pressure sensor calibration |
WO2014159819A1 (en) | 2013-03-13 | 2014-10-02 | Jinhyoung Park | System and methods for producing an image from a rotational intravascular ultrasound device |
US9301687B2 (en) | 2013-03-13 | 2016-04-05 | Volcano Corporation | System and method for OCT depth calibration |
CN105208947B (zh) | 2013-03-14 | 2018-10-12 | 火山公司 | 具有回声特性的过滤器 |
US10219887B2 (en) | 2013-03-14 | 2019-03-05 | Volcano Corporation | Filters with echogenic characteristics |
US10292677B2 (en) | 2013-03-14 | 2019-05-21 | Volcano Corporation | Endoluminal filter having enhanced echogenic properties |
US9246595B2 (en) | 2013-12-09 | 2016-01-26 | Neophotonics Corporation | Small packaged tunable laser transmitter |
WO2015162671A1 (ja) | 2014-04-21 | 2015-10-29 | 富士通株式会社 | 波長可変レーザ光源、光送信器及び光送受信器モジュール |
US10418783B1 (en) | 2018-07-18 | 2019-09-17 | Massachusetts Institute Of Technology | Semiconductor laser with intra-cavity electro-optic modulator |
US11984700B2 (en) | 2022-10-05 | 2024-05-14 | Microsoft Technology Licensing, Llc | Integrated laser and modulator systems |
Family Cites Families (32)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61222289A (ja) | 1985-03-28 | 1986-10-02 | Tokyo Gas Co Ltd | レ−ザ装置 |
CA1322599C (en) * | 1988-01-13 | 1993-09-28 | Nobuhiro Fukushima | Floating type magneto-optic disk reading head system having external semiconductor laser resonator operating at orthogonal two mode oscillations |
US4904045A (en) | 1988-03-25 | 1990-02-27 | American Telephone And Telegraph Company | Grating coupler with monolithically integrated quantum well index modulator |
US5255274A (en) | 1989-09-06 | 1993-10-19 | The Board Of Trustees Of The Leland Stanford University | Broadband laser source |
US5166940A (en) | 1991-06-04 | 1992-11-24 | The Charles Stark Draper Laboratory, Inc. | Fiber laser and method of making same |
GB9118843D0 (en) * | 1991-09-03 | 1991-10-16 | British Telecomm | An optical transmission system |
FR2681191A1 (fr) | 1991-09-06 | 1993-03-12 | France Telecom | Composant integre laser-modulateur a super-reseau tres couple. |
EP0553994A1 (en) | 1992-01-29 | 1993-08-04 | AT&T Corp. | Compact optical pulse source |
US5290730A (en) * | 1992-09-10 | 1994-03-01 | Hughes Aircraft Company | Wavelength conversion waveguide and fabrication method |
US5392308A (en) | 1993-01-07 | 1995-02-21 | Sdl, Inc. | Semiconductor laser with integral spatial mode filter |
US5321718A (en) | 1993-01-28 | 1994-06-14 | Sdl, Inc. | Frequency converted laser diode and lens system therefor |
FR2706079B1 (fr) | 1993-06-02 | 1995-07-21 | France Telecom | Composant intégré monolithique laser-modulateur à structure multi-puits quantiques. |
US5434874A (en) | 1993-10-08 | 1995-07-18 | Hewlett-Packard Company | Method and apparatus for optimizing output characteristics of a tunable external cavity laser |
US5663824A (en) * | 1993-11-02 | 1997-09-02 | Lucent Technologies Inc. | Optical modulators as monolithically integrated optical isolators |
US5432123A (en) | 1993-11-16 | 1995-07-11 | At&T Corp. | Method for preparation of monolithically integrated devices |
FR2716303B1 (fr) | 1994-02-11 | 1996-04-05 | Franck Delorme | Laser à réflecteurs de Bragg distribués, accordable en longueur d'onde, à réseaux de diffraction virtuels activés sélectivement. |
US5548607A (en) | 1994-06-08 | 1996-08-20 | Lucent Technologies, Inc. | Article comprising an integrated laser/modulator combination |
JPH0897491A (ja) | 1994-09-26 | 1996-04-12 | Hitachi Cable Ltd | 全ファイバレーザ |
US5802084A (en) * | 1994-11-14 | 1998-09-01 | The Regents Of The University Of California | Generation of high power optical pulses using flared mode-locked semiconductor lasers and optical amplifiers |
GB2298733B (en) | 1995-03-06 | 1998-09-09 | Northern Telecom Ltd | Wavelength control of data modulated lasers |
FR2734096B1 (fr) | 1995-05-12 | 1997-06-06 | Commissariat Energie Atomique | Cavite microlaser et microlaser solide impulsionnel a declenchement passif et a commande externe |
US5608561A (en) | 1995-06-07 | 1997-03-04 | Lucent Technologies Inc. | Method and system for reducing chirp in an optical cummunication system |
US5650856A (en) * | 1995-06-16 | 1997-07-22 | Brown University Research Foundation | Fiber laser intra-cavity spectroscope |
GB2302443B (en) | 1995-06-21 | 1999-03-17 | Northern Telecom Ltd | Lasers |
JPH0964334A (ja) | 1995-08-28 | 1997-03-07 | Toshiba Corp | 発光素子と外部変調器の集積素子 |
US6041071A (en) * | 1995-09-29 | 2000-03-21 | Coretek, Inc. | Electro-optically tunable external cavity mirror for a narrow linewidth semiconductor laser |
KR0149127B1 (ko) | 1995-10-31 | 1998-12-01 | 양승택 | 수동과 능동의 혼합형으로 모드로킹 된 레이저 구도 |
DE19624514C1 (de) * | 1996-06-19 | 1997-07-17 | Siemens Ag | Laserdiode-Modulator-Kombination |
JPH10125989A (ja) | 1996-10-17 | 1998-05-15 | Furukawa Electric Co Ltd:The | 光集積素子 |
US5870417A (en) * | 1996-12-20 | 1999-02-09 | Sdl, Inc. | Thermal compensators for waveguide DBR laser sources |
US5943464A (en) * | 1997-02-07 | 1999-08-24 | Khodja; Salah | Nonlinear optical device including poled waveguide and associated fabrication methods |
US6175433B1 (en) * | 1997-06-17 | 2001-01-16 | Massachusetts Institute Of Technology | Optical bit rate converter |
-
1999
- 1999-08-31 US US09/386,621 patent/US6295308B1/en not_active Expired - Lifetime
-
2000
- 2000-07-11 CN CN00812210.5A patent/CN1371539A/zh active Pending
- 2000-07-11 JP JP2001520521A patent/JP2003508927A/ja active Pending
- 2000-07-11 WO PCT/US2000/018859 patent/WO2001017077A1/en not_active Application Discontinuation
- 2000-07-11 AU AU59285/00A patent/AU5928500A/en not_active Abandoned
- 2000-07-11 EP EP00945320A patent/EP1218990A1/en not_active Withdrawn
- 2000-07-11 CA CA002381046A patent/CA2381046A1/en not_active Abandoned
- 2000-08-30 TW TW089117850A patent/TW466808B/zh not_active IP Right Cessation
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101416426B (zh) * | 2006-03-02 | 2012-12-12 | 菲尼萨公司 | 具有集成光滤波器的直接调制激光器 |
CN113300212A (zh) * | 2020-02-24 | 2021-08-24 | 中国科学院苏州纳米技术与纳米仿生研究所 | 一种芯片级调频激光装置 |
CN111865426A (zh) * | 2020-07-20 | 2020-10-30 | 成都优博创通信技术有限公司 | 一种光谱对准方法、装置、发射机及光网络系统 |
CN111865426B (zh) * | 2020-07-20 | 2022-04-12 | 成都优博创通信技术有限公司 | 一种光谱对准方法、装置、发射机及光网络系统 |
CN112531457A (zh) * | 2020-11-30 | 2021-03-19 | 联合微电子中心有限责任公司 | 片上扫频光源和使用其的相控阵 |
CN112531457B (zh) * | 2020-11-30 | 2022-02-15 | 联合微电子中心有限责任公司 | 片上扫频光源和使用其的相控阵 |
Also Published As
Publication number | Publication date |
---|---|
US6295308B1 (en) | 2001-09-25 |
TW466808B (en) | 2001-12-01 |
WO2001017077A1 (en) | 2001-03-08 |
JP2003508927A (ja) | 2003-03-04 |
AU5928500A (en) | 2001-03-26 |
EP1218990A1 (en) | 2002-07-03 |
CA2381046A1 (en) | 2001-03-08 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN1371539A (zh) | 带有集成调制器的波长锁定外腔激光器 | |
CN100477419C (zh) | 用于外部腔可调激光器的半集成设计 | |
US7539369B2 (en) | Optical device and manufacturing method thereof | |
CN100353212C (zh) | 用于对光发射模块进行集成的方法和装置 | |
US7228031B2 (en) | Method and apparatus providing an output coupler for an optical beam | |
KR101405419B1 (ko) | 레이저 모듈 | |
US7099357B2 (en) | Wavelength-tunable laser apparatus | |
KR100916311B1 (ko) | 이중 결합 링 공진기를 이용한 파장 가변 레이저 다이오드 | |
US8644714B2 (en) | Multi-wavelength optical source generator | |
US6822980B2 (en) | Tunable semiconductor laser with integrated wideband reflector | |
CA2424574A1 (en) | Tunable external cavity laser | |
US6320695B1 (en) | Optical amplifying apparatus | |
EP1028333B1 (en) | Multiple wavelength optical multiplexing device, multiple wavelength light source incorporating aforementioned device, and optical amplifier | |
EP1159774B1 (en) | A tunable laser source with an integrated wavelength monitor and method of operating same | |
KR100420950B1 (ko) | 파장 가변 레이저 광원 | |
US20030123498A1 (en) | Single wavelength laser module | |
JPH085834A (ja) | 光フィルタ及び発振波長安定化光源 | |
KR19990027838A (ko) | 파장 분할 다중 광전송 시스템 | |
JP3112105B2 (ja) | 波長多重光源 | |
US20020159140A1 (en) | Multichannel laser transmitter suitable for wavelength-division multiplexing applications | |
JP2965013B2 (ja) | 発光モジュール構造 | |
Leroy et al. | Less than 36pm wavelength drift over [0, 50 C] range with low-cost plug and play lasers with a-thermal wavelength selection in the connector | |
Leroy et al. | Less than 36pm wavelength drift over [0-50/spl deg/C] range with low-cost plug and play lasers with a-thermal wavelength selection in the connector | |
JPH07168215A (ja) | 波長選択光スイッチ | |
CN103811999A (zh) | 集成信号加载器的半导体光发射装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
WD01 | Invention patent application deemed withdrawn after publication |