JP4918913B2 - 光集積装置、光出力方法並びにその製造方法 - Google Patents
光集積装置、光出力方法並びにその製造方法 Download PDFInfo
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- JP4918913B2 JP4918913B2 JP2007556192A JP2007556192A JP4918913B2 JP 4918913 B2 JP4918913 B2 JP 4918913B2 JP 2007556192 A JP2007556192 A JP 2007556192A JP 2007556192 A JP2007556192 A JP 2007556192A JP 4918913 B2 JP4918913 B2 JP 4918913B2
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/14—External cavity lasers
- H01S5/141—External cavity lasers using a wavelength selective device, e.g. a grating or etalon
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/12004—Combinations of two or more optical elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
- H01S5/0261—Non-optical elements, e.g. laser driver components, heaters
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
- H01S5/0265—Intensity modulators
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/21—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour by interference
- G02F1/217—Multimode interference type
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/21—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour by interference
- G02F1/225—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour by interference in an optical waveguide structure
- G02F1/2257—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour by interference in an optical waveguide structure the optical waveguides being made of semiconducting material
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0225—Out-coupling of light
- H01S5/02251—Out-coupling of light using optical fibres
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/023—Mount members, e.g. sub-mount members
- H01S5/02325—Mechanically integrated components on mount members or optical micro-benches
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/1003—Waveguide having a modified shape along the axis, e.g. branched, curved, tapered, voids
- H01S5/101—Curved waveguide
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/1082—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region with a special facet structure, e.g. structured, non planar, oblique
- H01S5/1085—Oblique facets
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Lasers (AREA)
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
Description
Claims (13)
- 基板と、その上に形成された光機能素子部と、光分岐部と、光利得部と、第一の反射ミラーと、を含む光集積回路チップと、前記光集積回路チップの外に形成され、前記第一の反射ミラーおよび前記光利得部と共にレーザ共振器を構成する第二の反射ミラーと、を備え、前記光分岐部は、前記第一の反射ミラーと前記光利得部の間に位置し、前記光分岐部からの出力は分光されて一方は光機能素子部へ導波され、他方は共振器を形成するのに必要なフィードバックを提供することを特徴とする光集積素子。
- 前記光分岐部は、1×2型マルチモード干渉導波路、2×2型マルチモード干渉導波路、Y分岐導波路または方向性結合器のいずれかであることを特徴とする請求項1に記載の光集積装置。
- 前記第一の反射ミラーは、エッチングされた端面を有することを特徴とする請求項1または2に記載の光集積装置。
- 前記第一の反射ミラーは、壁開された端面を有することを特徴とする請求項1または2に記載の光集積装置。
- 前記光集積回路チップは更に、前記光集積回路チップの端面へ光を導波することを可能とした、傾斜した導波路を有することを特徴とする請求項1乃至4いずれかひとつに記載の光集積装置。
- 前記光集積回路チップは更に、無反射コートされた端面を有することを特徴とする請求項1乃至5いずれかひとつに記載の光集積装置。
- 前記第一の反射ミラーと前記光分岐部との間に、位相調整部を有することを特徴とする請求項1乃至6いずれかひとつに記載の光集積装置。
- 前記第二の反射ミラーの前に、光学フィルタを有することを特徴とする請求項1乃至7いずれかひとつに記載の光集積装置。
- 前記光学フィルタまたは前記第二の反射ミラーは、調節可能なフィルタ機能を有することを特徴とする請求項8に記載の光集積装置。
- 前記光学フィルタは、調節可能なフィルタ機能を有するエタロンであることを特徴とする請求項8に記載の光集積装置。
- 前記光機能素子は、少なくとも、マッハツェンダー型光変調器と、電界吸収型変調器と、可変光減衰器と、のいずれか一つを有することを特徴とする請求項1に記載の光集積装置。
- 前記エッチングされた端面は、金属膜または回折格子または多層反射膜を有することを特徴とする請求項3に記載の光集積装置。
- 前記壁開された端面は、金属膜または多層反射膜を有することを特徴とする請求項4に記載の光集積装置。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/JP2005/010903 WO2006131988A1 (en) | 2005-06-08 | 2005-06-08 | Optical integrated device |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2008543028A JP2008543028A (ja) | 2008-11-27 |
JP4918913B2 true JP4918913B2 (ja) | 2012-04-18 |
Family
ID=37498200
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2007556192A Expired - Fee Related JP4918913B2 (ja) | 2005-06-08 | 2005-06-08 | 光集積装置、光出力方法並びにその製造方法 |
Country Status (3)
Country | Link |
---|---|
US (1) | US20090268762A1 (ja) |
JP (1) | JP4918913B2 (ja) |
WO (1) | WO2006131988A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9893489B2 (en) | 2015-08-28 | 2018-02-13 | International Business Machines Corporation | Wafer scale monolithic integration of lasers, modulators, and other optical components using ALD optical coatings |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5435447B2 (ja) * | 2008-08-05 | 2014-03-05 | 古河電気工業株式会社 | レーザ素子およびレーザモジュール |
GB0919153D0 (en) * | 2009-10-31 | 2009-12-16 | Ct Integrated Photonics Ltd | Filtered optical source |
KR101405419B1 (ko) * | 2010-06-18 | 2014-06-27 | 한국전자통신연구원 | 레이저 모듈 |
CN109494566A (zh) * | 2018-11-20 | 2019-03-19 | 中国电子科技集团公司第四十研究所 | 一种外腔型激光器 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001177182A (ja) * | 1999-12-16 | 2001-06-29 | Fujitsu Ltd | 外部共振器型半導体レーザおよび光導波路装置 |
JP2003508927A (ja) * | 1999-08-31 | 2003-03-04 | コーニング・インコーポレーテッド | 一体化された変調器を有する波長固定外部共振器レーザ |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
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JPH1084161A (ja) * | 1996-09-06 | 1998-03-31 | Sumitomo Electric Ind Ltd | 半導体レーザ及びその製造方法 |
US6665320B1 (en) * | 2001-01-29 | 2003-12-16 | Lightwave Electronics | Wideband tunable laser sources with multiple gain elements |
US7257142B2 (en) * | 2004-03-29 | 2007-08-14 | Intel Corporation | Semi-integrated designs for external cavity tunable lasers |
-
2005
- 2005-06-08 US US11/921,763 patent/US20090268762A1/en not_active Abandoned
- 2005-06-08 JP JP2007556192A patent/JP4918913B2/ja not_active Expired - Fee Related
- 2005-06-08 WO PCT/JP2005/010903 patent/WO2006131988A1/en active Application Filing
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003508927A (ja) * | 1999-08-31 | 2003-03-04 | コーニング・インコーポレーテッド | 一体化された変調器を有する波長固定外部共振器レーザ |
JP2001177182A (ja) * | 1999-12-16 | 2001-06-29 | Fujitsu Ltd | 外部共振器型半導体レーザおよび光導波路装置 |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9893489B2 (en) | 2015-08-28 | 2018-02-13 | International Business Machines Corporation | Wafer scale monolithic integration of lasers, modulators, and other optical components using ALD optical coatings |
US10218150B2 (en) | 2015-08-28 | 2019-02-26 | International Business Machines Corporation | Wafer scale monolithic integration of lasers, modulators, and other optical components using ALD optical coatings |
US10454239B2 (en) | 2015-08-28 | 2019-10-22 | International Business Machines Corporation | Wafer scale monolithic integration of lasers, modulators, and other optical components using ALD optical coatings |
Also Published As
Publication number | Publication date |
---|---|
WO2006131988A1 (en) | 2006-12-14 |
JP2008543028A (ja) | 2008-11-27 |
US20090268762A1 (en) | 2009-10-29 |
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