TW466507B - Voltage nonlinear resistor and its manufacture - Google Patents

Voltage nonlinear resistor and its manufacture Download PDF

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Publication number
TW466507B
TW466507B TW89106706A TW89106706A TW466507B TW 466507 B TW466507 B TW 466507B TW 89106706 A TW89106706 A TW 89106706A TW 89106706 A TW89106706 A TW 89106706A TW 466507 B TW466507 B TW 466507B
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Taiwan
Prior art keywords
resistance layer
sintered body
resistance
linear resistor
main component
Prior art date
Application number
TW89106706A
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Chinese (zh)
Inventor
Toshiya Imai
Takeshi Udagawa
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Toshiba Corp
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Priority claimed from JP28285299A external-priority patent/JP4157237B2/en
Application filed by Toshiba Corp filed Critical Toshiba Corp
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Publication of TW466507B publication Critical patent/TW466507B/en

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    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/009—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone characterised by the material treated
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/45—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements
    • C04B41/50—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with inorganic materials
    • C04B41/5025—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with inorganic materials with ceramic materials
    • C04B41/5037—Clay, Kaolin
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/45—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements
    • C04B41/52—Multiple coating or impregnating multiple coating or impregnating with the same composition or with compositions only differing in the concentration of the constituents, is classified as single coating or impregnation
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/80—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics
    • C04B41/81—Coating or impregnation
    • C04B41/85—Coating or impregnation with inorganic materials
    • C04B41/87—Ceramics
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/80—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics
    • C04B41/81—Coating or impregnation
    • C04B41/89—Coating or impregnation for obtaining at least two superposed coatings having different compositions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
    • H01C17/06—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base
    • H01C17/065—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base by thick film techniques, e.g. serigraphy
    • H01C17/06506—Precursor compositions therefor, e.g. pastes, inks, glass frits
    • H01C17/06513—Precursor compositions therefor, e.g. pastes, inks, glass frits characterised by the resistive component
    • H01C17/06533—Precursor compositions therefor, e.g. pastes, inks, glass frits characterised by the resistive component composed of oxides
    • H01C17/06546—Oxides of zinc or cadmium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/10—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material voltage responsive, i.e. varistors
    • H01C7/105—Varistor cores
    • H01C7/108—Metal oxide
    • H01C7/112—ZnO type
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2111/00—Mortars, concrete or artificial stone or mixtures to prepare them, characterised by specific function, property or use
    • C04B2111/00474—Uses not provided for elsewhere in C04B2111/00
    • C04B2111/00844—Uses not provided for elsewhere in C04B2111/00 for electronic applications

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Ceramic Engineering (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Structural Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Inorganic Chemistry (AREA)
  • Electromagnetism (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Thermistors And Varistors (AREA)
  • Compositions Of Oxide Ceramics (AREA)

Abstract

In order to improve protection of a voltage nonlinear resistor with respect to lightning impulses, overvoltages, etc., a voltage nonlinear resistor is provided with a sintered body 1, composed mainly of a zinc oxide and high-resistance layers formed on the side faces of the sintered body 1. The high-resistance layers 3 have Al6Si2O13 (mullite) as a main component, containing components including at least 1.0-25 wt.% AlPO4 (aluminum orthophosphate), 0.1-15 wt.% MnFe2O4 (ferrite), and 0.1-15 wt.% Fe2O3 (iron oxide).

Description

A7 4 6 65 0 7 B7_ 五、發明說明（1 ) 〔發明之詳細說明〕 〔發明所屬之技術領域〕 <請先W讀背面之注意事項再填寫本頁) 本發明爲關於例如於保護電力系統之過電壓保護裝置 所使用之電壓非線性電阻器及其製造方法中，特別具有高 電阻層之電壓非線性電阻器及其製造方法。 〔先前之技術〕 一般於電力系統中，爲了除去重疊正常電壓之過電壓 並保護電力系統，乃使用所謂的避雷器（surge arrester ) 和浪洞吸收劑之過電壓保護裝置。 於此過電壓保護裝置中，主要使用電壓非線性電阻器 。電壓非線佺電阻器爲於正常電壓下，顯示大略絕緣特性 1於外加過電壓時，具.有較低電阻之電阻器。 此類電壓非線性電阻器爲以Ζ η 0 (氧化鋅）作爲主 成分，且具備爲了取得非線性電阻特性，乃添加至少一種 以上之金屬氧化物作爲添加物，且於混合，造粒，成形後 ，燒結（sintering )所取得之燒結體。 經濟部智慧財產局貝工消費合作社印敦 又，於煅燒體之側面，爲了防止浪洞吸收時來自側面 的飛弧（fUshover )，乃將高電阻成分之糊狀塗覆劑和玻 璃塗覆劑等予以塗佈後，經由熱處理將其烘烤，形成高電 阻層。 〔發明所欲解決之課題〕 近年|隨著電力需要的成長及高度資訊化社會的發展 本紙張尺度適用乍a a家標準（CNS)A4規格（210 X 297公釐） -4 - 4 6 650 7 A7 _____ B7 五、發明說明（2) '而強烈要求安定且廉價的電力供給。受其影響，於過電 壓保護裝置中亦對於高信賴性及小型化之要求變高。 最近，爲了符合此類要求，乃將電壓非線性電阻器每 單位厚度之電壓値變大，壓低高度標度，並再經由能量吸 收能力的提高而設計成小直徑化，推展出電壓非線性電阻 器的小型化》 但是，於先前的電壓非線性電阻器中，於燒結體之側 面將高電阻層以粘合劑予以粘合形成時，隨著粘合強度的 降低，而令高電阻層易由燒結體上剝離，若高電阻層亦部 分地由燒結體上剝離，則具有令耐電壓特性能降低之問題A7 4 6 65 0 7 B7_ V. Description of the invention (1) [Detailed description of the invention] [Technical field to which the invention belongs] < Please read the precautions on the back before filling out this page) The present invention is about, for example, protecting power Among the voltage non-linear resistors used in the system's over-voltage protection device and the manufacturing method thereof, particularly the voltage non-linear resistor with a high resistance layer and the manufacturing method thereof. [Previous Technology] Generally, in power systems, so-called surge arresters and surge absorber overvoltage protection devices are used to remove overvoltages that overlap normal voltages and protect the power system. In this overvoltage protection device, voltage nonlinear resistors are mainly used. Voltage non-linear resistors are displayed under normal voltage and have roughly insulation characteristics. 1 When applied with an over-voltage, a resistor with a lower resistance. This type of voltage non-linear resistor is based on Z η 0 (zinc oxide) as a main component, and has at least one metal oxide as an additive in order to obtain non-linear resistance characteristics, and is mixed, granulated, and formed. Then, the obtained sintered body is sintered. Indun, a shelling consumer cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs, also uses a high-resistance paste coating agent and a glass coating agent on the side of the calcined body in order to prevent fUshover from the side when the cavity absorbs After being applied, it is baked through a heat treatment to form a high-resistance layer. [Problems to be Solved by the Invention] In recent years | With the growth of power needs and the development of a highly information-oriented society, the paper standards are applicable to CNS A4 specifications (210 X 297 mm) -4-4 6 650 7 A7 _____ B7 V. Description of the invention (2) 'And a strong and cheap power supply is strongly required. Affected by this, the requirements for high reliability and miniaturization in overvoltage protection devices have become higher. Recently, in order to meet such requirements, the voltage per unit thickness of the voltage non-linear resistor has been increased, the height scale has been reduced, and the diameter of the voltage non-linear resistor has been improved through the improvement of energy absorption capacity. "Miniaturization of the device" However, in the conventional voltage non-linear resistor, when the high-resistance layer was bonded to the side of the sintered body with an adhesive, the high-resistance layer was made easier as the bonding strength decreased. If the high-resistance layer is partially peeled off from the sintered body, there is a problem that the withstand voltage characteristics are reduced.

Q 因此，經由每單位厚度之電壓增大和小直徑化，而令 電壓非線性電阻器小型化時，則難符合所要求的雷脈衝和 過電壓等浪洞之保護能力。 本發明爲解決如上述之問題，經由形成粘合強度高且 可發揮優良耐電壓性能之高電阻層，提供可令電脈衝和過 電壓等浪洞之保護能力提高之電壓非線性電阻器及其製造 方法爲其目的。 〔用以解決課題之手段〕 爲了達成上述目的，本發明爲經由如下述之手段及製 造方法，取得電壓非線性電阻器。 第一態樣之發明爲具備以氧化鋅作爲主成分之燒結體 ，且於前述燒結體之側面具有高電阻層之電壓非線性電阻 (請先閱讀背面之注意事項再填寫本頁) 裝-！----訂-----I ---線 經濟部智慧財產局員工消費合作社印製 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） -5 - 經濟部智慧財產局ΛΚ工消费合作社印製 SS5 0 7 A7 _ B7 五、發明說明（3) 器中，前述高電阻層爲含有A 1 P0!(正磷酸鋁）1 . 0 〜25wt%，Fe2〇3(氧化鐵）0 . 1 〜15wt% ，且剩餘成分中A 1 6S i 2〇13 (模來石）爲最多之成分 爲其特徵。 於此類電壓非線性電阻器中，於添加F e 2 0 3 (氧化 鐵）下|可令耐濕特性提供，並且可發揮對於外部環境安 定之品質。 第二態樣之發明爲具備以氧化鋅作成主成分之燒結體 1且於前述燒結體側面具有高電阻層之電壓非線性電阻器 中， 前述高電阻層爲含有A 1 Ρ〇4 (正磷酸鋁）1 . 〇〜 25冗七％，％11?62〇，！（鐵素體）〇.1〜15|七 %，F e2〇;i (氧化鐵）〇 . 1〜15wt%，剩餘成分 中A leS i 2〇13 (模來石）爲最多之成分爲其特徵。 於此類電壓非線性電阻器中，可將高電阻層強力粘合 至燒結體之側面，且因可提高耐電壓性能，故對於雷脈衝 和過電壓等之浪洞可發揮優良的保護能力。 第三態樣之發明爲於對應第一態樣或第二態樣發明之 電壓非線性電阻器中，將前述高電阻層作爲第一高電阻層 ，並於其上再形成以S i 〇2 (砂石）或A 1 2〇3 (氧化 鋁）或S i 〇2 (砂石）與CHaS i 0:,5 (有機矽酸鹽 )或A 1 2〇3 (氧化鋁）與CH3S i 〇ι.5 (有機矽酸 鹽）或作爲主成分之非晶質第二高電阻層。 於此類電壓非線性電阻器中，經由第一高電阻層上形 — — — — — —In^-‘ — — ίί^.ι--I----線 I <锖先《讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準（CNS>A4規格（210 X 297公釐） "6 - 經濟部智慧財產局Μ工消費合作杜印製 ;S 65 Ο 7 Α7 ___ Β7___ 五、發明說明（4 ) 成非結晶之第二高電阻層，則可比第一態樣或第二態樣發 明之電壓非線性電阻器，令高電阻層之耐電壓性能更加提 高。 第四態樣之發明爲於對應第一態樣或第二態樣發明之 電壓非線性電阻器中，前述高電阻層之厚度爲1 0 〜 lmm。 於此類電壓非線性電阻器中，經由將高電阻層之厚度 限定於1 Oym〜1mm，則可確保適切的粘合強度及良 好之耐電壓性能兩者。 第五態樣之發明爲於對應第一態樣至第四態樣發明之 電壓非線性電阻器之製造方法中，經由於 A 1 (H2P〇4)3( —代磷酸鋁）和 Al6Si2〇13( 模來石）作爲主成分之流漿中，將F e 2〇3 (氧化鐵）或 MnF e2〇4 (鐵素體）及F e2〇a〔氧化鐵）添加，混 合作成混合流發之混合工程’及將前述混合流發於前述燒 結體之側面塗佈之塗佈工程，及進行前述混合流漿之烘烤 之烘烤工程，形成前述之第一高電阻層。 此類電壓非線性電阻器之製造方法中|於 A 1 (H2P〇4)3(—代磷酸鋁）與 A1sSi2〇13( 模來石）作爲主成分之流漿中，將F e2〇3 (氧化鐵）或 MnF e2〇:i (鐵素體）及F e2〇3 (氧化鐵）添加，混 合作成混合流漿，並將其在燒結體之側面塗佈，烘烤，則 可形成以A 1 6S i 2〇1：ί (模來石）作爲主成分，且含有 Α1ΡΟ!(正磷酸鋁），Fe2〇3(氧化鐵）或 本紙張尺度適用中國酉家標準（CNS)A4規格（210 X 297公釐） -7- •裝 ----I--訂---— — — -^ <請先閲讀背面之沒意事項再填寫本頁) 4 6 65 Ο 7 Α7 經濟部智慧財產局員工消費合作社印製 _______Β7______五、發明說明（5 ) Μη F e2〇_i (鐵素體）及F e2〇3 (氧化鐵）之第一高 電阻層，並於燒結體之側面強力粘合則可製造電壓非線性 電阻器。 第六態樣之發明，爲於對應第五態樣發明之電壓非線 性電阻器之製造方法中，形成前述之第一高電阻層時，於 前述之混合工程使用平均粒徑爲0 . 0 1〜1 〇 /i m之 MnFe2〇4(鐵素體）及Fe2〇3 (氧化鐵）。 此類電壓非線性電阻器之製造方法中，將 MnFe2〇4 (鐵素體）及Fe2〇3 (氧化鐵）之平均粒 徑限定於0 . 0 1〜1 0 y m，則可令高電阻層保持適切 的均勻性，並且可具有優良的耐電壓性能。 第七態樣之發明爲於對應第五態樣或第六態樣發明之 電壓非線性電阻器之製造方法中，形成前述之第一高電阻 層時，於混合工程終了後，於1 0 0小時以內令塗佈工程 及煅燒工程終了爲其特徵。 此類電壓非線性電阻器之製造方法中，經由令混合工 程終了 1 0 0小時以內，完成塗佈工程及烘烤工程，則可 不會降低第一高電阻層之粘合強度，製造電壓非線性電阻 器。 第八態樣之發明爲於對應第五態樣至第七態樣發明之 電壓非線性電阻器之製造方法中，形成前述之第一高電阻 層時，前述之烘烤工程爲以2 0 0°c〜8 0 0 °c範圔之烘 烤最高溫度下進行烘烤爲其特徵。 此類電壓非線性電阻器之製造方法中’以供烤工程之 (請先閲讀背面之注意事項再填寫本頁) ,·裝 ----- - 訂·! *.^ 本紙張尺度適用_國S家標準（CNS)A4規格（21〇χ 297公釐> --8 - 經濟部智慧財產局員工消费合作社印製 ^ 65 0 7 A7 一___；__B7____ 五、發明說明（6 ) 烘烤最高溫度以2 0 0〜8 0 0 °C範圍進行烘烤，則可令 高電阻層具有優良的粘合強度，並且具有優良的耐電壓性 倉t 。 第九態樣之發明爲於對應第五態樣至第八態樣之電壓 非線性電阻器之製造方法中，形成前述之第一高電阻層時 ，令前述之烘烤工程爲至少由1 0 0 t開始至最高溫度爲 止，以10 °C / h!· s〜300 °C / hr s範圍之升溫速 度進行烘烤。 此類電壓非線性電阻器之製造方法中，烘烤工程之烘 烤升溫度爲以1 0°C/h r s〜3 0 0 °C/h r s之範圍 進行烘烤，則可令第一高電阻層爲具有優良的粘合強度· 並具有優良的耐電壓性能。 第十態樣之發明爲於對應第五態樣至第九態樣發明之 電壓非線性電阻器之製造方法中，將S i 0 2 (矽石）或 Al2〇3(氧化鋁）及Si〇CH3(烷氧基矽烷），異 丙醇 > 正丁醇，聚矽氧烷系界面活性劑及醋酸作爲成分之 水溶液，於形成前述第一高電阻層之前述燒結體之側面塗 佈，烘烤形成第二高電阻層。 此類電壓非線性電阻器之製造方法中，經由形成以 S 1 〇2 (矽石）或A 12〇3 (氧化鋁）或S i 〇2與 CH3S i 〇15 (有機矽酸鹽）或A 12〇3 (氧化鋁） 與CHsS i Oh 5 (有機矽酸鹽）作爲主成分之非結晶第 二高電阻層’則可製造耐電壓特性更爲提高之非線性電阻 體。 本紙張尺度適用令國國家標準<CNS)A4規格（210 X 297公« ) -9- — — — — —ιιιιιί < * I I f I I I 1 訂- lllllll·^ ί請先閱讀背面之注意事項再填寫本頁) 經濟部智懸財產局員工消费合作社印焚 ^ 65 0 7 A7 B7 五、發明說明（7) 第十一態樣之發明爲對應於第十態樣發明之電壓非線 性電阻器之製造方法中’於形成前述第二高電阻層時之供 烤工程中，以5 0 °C〜8 0 0 °C範圍之烘烤最高溫度進行 烘烤。 此類電壓非線性電阻器之製造方法中’經由令第二高 電阻層之烘烤工程的烘烤最高溫度以5 0〜8 0 0°C之範 圍進行烘烤，則可實現優良的耐電壓性能。 第十二態樣之發明爲對應於第十或第十一態樣發明之 電壓非線性電阻器之製造方法中’形成第二高電阻層時’ 令烘烤工程爲至少由3 0 °C開始至最高溫度爲止’以1 0 °C/h r s〜300 t/hr s範圍之升溫速度進行烘烤 〇 此類電壓非線性電阻器之製造方法中，經由令第二高 電阻層4之烘烤工程之烘烤升溫速度以1 0°C / h r S〜 3 0 0 °C/h r s範圍進行烘烤，則可實現優良之耐電壓 性能。 尙，本發明並非限定於上述態樣。 本發明之其他態樣之發明爲在氧化鋅作爲主成分之燒結 體側面，具有以A 1 e S i 2〇！ 3 (模來石）作爲主成分， 且含有A1 PCU 5 . 0〜2〇wt%及Μη2Ρ〇τ或 Μ η ! ( Ρ 2 0 r ) 3 0 . 5〜3wt%之高電阻層爲其特 徵之電壓非線性電阻器。 更且，本發明之其他態樣之發明爲在氧化鋅作爲主成 分之燒結體側面，具有以A 1 sS 1 2〇13 (模來石）作爲 本纸張尺度適用令國國家標準（CNS)A4規格<210 X 297公釐） ,·)〇 . -----------' 裝--------訂---------i (晴先Μ讀背面之注i項再填寫本頁) A7 :507 ______B7_ 五、發明說明（8) 主成分，且含有A1 PO! 5 . 〇〜2〇wt%及 M g ：) ( P 〇 1 ) 2 0 . 5〜3 wt%之高電阻層爲其特 徵之電壓非線性電阻器。 更且’本發明之其他態樣之發明爲在氧化鋅作爲主成 分之燒結體側面，具有以A 1 sS i 2〇!3 (模來石）作爲 主成分，且含AlP〇4 5，0〜20wt%& C a ( P 0 3 ) 2 0 5〜3wt%之高電阻層爲其特徵 之電壓非線性電阻器》 更且，本發明之其他態樣之發明爲於對應第1 2項至 第1 4項任一項發明之電壓非線性電阻器中，於高電阻層 中之T 1〇£或F e2〇3爲含有0 · 2〜5wt%爲其特 徵之電壓非線性電阻器》 更且，本發明之其他態樣之發明爲於上述其他態樣之 發明中，於高電阻層中Mn F e2〇4爲含有1〜1 〇wt %爲其特徵。 更且，本發明之其他態樣之發明爲於上述其他態樣之 發明中，於高電阻層上再具有以S i 〇2，A 1 2〇3作爲 主成分之非晶質高電阻膜爲其特徵。 因此，若根據上述其他態樣之發明，則令燒結體之側 面與高電阻層之粘合強度大幅提高，且可取得對於外部環 境爲安定品質，且具備優良放電耐量特性和耐惡化特性兩 者之電壓非線性電阻器。 此處，關於上述其他態樣發明之特徵點及其作用效果 爲如下所述。 本紙張尺度適用令國S家標芈（CNS)A4規格（210 297公釐） I I ------- ^ * I I ---I ^ '— — — — — I! ^ 1 (諳先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 -11 - A7 46 65 0 7 _______,^ΒΤ.____ 五、發明說明（9 ) 於形成高電阻層上，於氧化鋅作爲主成分之燒結體側 面，將A 1 eS i 2〇ι:3 (模來石）作爲主成分，且含有硫 酸鋁鹽和磷酸錳鹽，磷酸鎂鹽，磷酸鈣鹽至少一者之高電 阻劑予以塗佈，並於1 5 0〜6 0 0 °C之溫度範圍下進行 烘烤處理，形成高電阻層》 此時之高電阻劑爲對於燒結體側面塗佈，藉由濕潤（ weuing )作用，於燒結體側面部之間活動使得距離變近> 而在磷酸鋁中加入其他之磷酸鹽則可增大濕潤作用，故可 增加粘合強度。又，爲了令濕潤性佳，可在適當調整磷酸 鋁中其他磷酸鹽之混合比之下，增加粘合強度。 又|第二作用爲對於高濕度氛圍氣之特性惡化。僅使 用磷酸鋁之高電阻劑進行烘烤形成高電阻層時，未反應之 一部分磷酸鋁爲離子化，若將其例如於相對濕度8 5 %之 高濕度氛圍氣中放置，則高電阻層之表面爲呈較多孔之構 造 > 故通過氣孔吸收水分，易於粒子表面上之頸部引起凝 集。 其結果 > 於對向電極間形成一樣的電場層，令導電度 增加，並且引起特性惡化。 另一方面，於磷酸鋁中，加入其他之磷酸鹽，則具有 抑制未反應之一部分磷酸鋁離子化之作用，即使於高濕度 氛圍氣中亦不會令特性惡化。 又，藉由加入金屬氧化物T i 〇2和F e2〇3，則可 期待同樣之效果。其係因金屬氧化物爲作用爲一種觸媒’ 並且促進高電阻劑的硬化反應。 本紙張尺度適用令a國家標準（CNS>A4規格（210*297公釐） -12- — — — — —— — — — — i i - I I I I I ί I 一511 — — — — r (請先Μ讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作钍印裳 經濟部智慧財產局員工消费合作社印製 466507 A7 B7 五、發明說明（10) 更且，藉由加入Mn F e 2〇4進入高電阻層之較多孔 構造部中，則可達成同樣之作用。 更且，於高電阻層上，再形成以S i 〇2 ’ A丨2〇3 作爲主成分之非晶質高電阻膜，則可進入高電阻層之較多 孔構造部中，同時因爲非晶質之高電阻層爲具有出水作用 ，故以其覆蓋燒結體之側面表面，則可造成同樣之作用。 另一方面，爲了令粘合力增大，除了可在燒結體之側 面部提高高電阻劑的濕潤性以外，亦必須配合燒結體與高 電阻劑之熱膨脹係數。燒結體與高電阻劑之熱膨脹係數差 過大時，高電阻劑於烘烤中發生剝離，且於放電耐量時產 生過量的熱，故發生剝離。 此時，於基材爲以氧化鋅作爲主成分之燒結體情形中 ，於高電阻劑中較佳使用A 1 6 S i 2 0 ! 3作爲主成分。 〔發明之實施形態〕 以下，參照圖面說明本發明之實施形態^ <第一之實施形態> 如圖1所示般，電壓非線性電阻器爲具備燒結體1 ， 並於此燒結體1之側面部形成第一及第二高電阻層3及4 ’並且將兩平坦面硏磨至指定厚度，且於此硏磨面上形成 錦電極2。 燒結體1之製造方法爲相對於主成分（母相：matrix )之ZnO (氧化鋅），將Bi2〇3(氧化鉍〕， 本紙張尺度適用中困國家標準（CNS>A4規格（210 X 297公釐） .13 - (請先M讀背面之注意事項再填寫本頁) 裝--- 1· n n I I t. 4 6 65 Ο 7 Α7 Β7 經濟部智慧財產局員工消f合作社印製 五、發明說明（11) Μ η Ο 2 (氧化錳）分別添加〇 . 5莫耳％，c ο 2 Ο 3 ( 氧化站）’Ni〇 (氧化鎳），sb2〇3(三氧化銻）分 別添加1莫耳％作成原料。 其次’將此原料與水及有機物粘合劑類共同以混合裝 置予以混合’作成混合流漿。將此混合流漿以噴霧乾燥器 進行噴霧造粒’並將指定重量之製粒粉放入模具中，以指 定之壓力加壓’例如成形爲直徑8 〇 m m之圓板狀。其後 ’爲了預先除去所添加的有機粘合劑類，乃在空氣中以 4 0 0〜5 0 0 °C熱處理，並再以1 2 0 0 t煅燒，則可 取得燒結體1。 其次’說明關於如上述製造之燒結體1側面所形成之 第一及第二側面高電阻層的第一實施形態。第一高電阻層 3爲以A丨sS i 2〇i3 (模來石）作爲主成分，且以含有 AIP〇4(正磷酸鋁），1 .〇 〜25wt%， Fe2〇3 (氧化鐵）〇 · 1〜15wt%之成分所構成。 尙’此處’所請主成分（母相：matrix)，爲意指除 了副成分（於本實施形態中爲A I P〇4 (正磷酸鋁）， F e2〇3 (氧化鐵））中之最多的成分。於以下所述之第 二實施形態至第十二實施形態中，主成分之意義亦爲意指 除了副成分中之最多的成分。 此類成分所構成的第一高電阻層3，可依如下之工程 而形成。 首先，製作以A 1 ( Η 2 Ρ 0 t 3 (—代磷酸鋁）與 A i 6 S i 2 0 i 3 (模來石）作爲主成分之流漿•並於此流 先 閱 讀 背 注 項 填 寫 % 良紙張尺度適用中國國家標準（CNS)A4規格（210 * 297公釐） -14 4 6 65 Ο 7 Α7 Β7 經濟部智慧財產局具工消費合作社印製 五、發明說明（12) 漿中加入F e 2 Ο 3 (氧化鐵），且混合作成混合流漿（混 合工程）。其後，將此，混合流漿於燒結體1之側面塗佈 (塗佈工程）。將此混合流漿進行烘烤’則可形成第一高 電阻層3 (烘烤工程）。 又，於第一高電阻層3上所形成的第二高電阻層4爲 以S i 〇2 (矽石）或A丨2〇3 (氧化鋁）或S i 〇2 (矽 石）和CHsS i Οι.5 (有機矽酸鹽）或A 12〇3 (氧 化鋁）和CH3S i Oi.s (有機矽酸鹽）作爲主成分。此 類第二高電阻層4爲依下列工程所形成。 首先，將S i〇2 (矽石）或Al2〇3 (氧化鋁）和 S i OCH3 (烷氧基矽烷）•異丙醇，正丁醇，聚矽氧烷 系界面活性劑及醋酸作爲成分之水溶液|於燒結體1側面 所形成之第一高電阻層3之表面塗佈（塗佈工程）。其後 ，進行塗佈水溶液的烘烤，形成第二高電阻層3 (烘烤工 程）。 此處，以A I6S i 2〇13 (模來石）作爲主成分，並 以前述含量不同之Α1Ρ〇4(正磷酸鋁），Fe2〇3( 氧化鐵）作爲副成分進行烘烤，製作形成第一高電阻層之 數種的電壓非線性體|並將此些試料與第一實施形態之該 試料比較。 將第一實施形態之該含量之A 1 P〇4 (正磷酸鋁）， F e2〇3 (氧化鐵）作爲副成分的第一高電阻層3之表面 ，形成以S i 〇2 (矽石）或A 12〇3 (氧化鋁）或 S i 〇2 (矽石）與CH3S 1 〇15 (有機矽酸鹽）或 未尺度適用t"國國家橾準（CNS)A4规格（210*297公釐） .15- —' ~ ' I I - ----I ^ illlm ^* — —[——1 — <請先《讀背面之注意事項再填寫本頁> 4 6 65 0 7 A7 B7 五、發明說明（13) A 1 2〇3 (氧化鋁）與CH3S i Οι.5 (有機矽酸鹽） 作爲主成分之第二高電阻層4之試料，與未形成此第二高 電阻層之試料比較。 即’製作令AIPOj(正磷酸鋁）爲0.1 ，1， 25 ，30wt%，Fe2〇3 (氧化鐵）爲 〇 . 01 ’ 〇 · 1 ，1 ’ 15，2〇wt%含量組合之形成數種第一 高電阻層3的電壓非線性電阻器。 又1於第一實施形態之該含量之A 1 P 〇4 (正磷酸銘 )，F e 2〇3 (氧化鐵）作爲副成分所形成的第一局電阻 層3之表面，製作形成以S i 0 2 (矽石）或A 1 2 〇 3 ( 氧化鋁）或S i 〇2 (矽石）和CH3S i 0:.5 (有機矽 酸鹽）或A丨2〇3 (氧化鋁）和CH3S i Oi.5 (有機 矽酸鹽）作爲主成分之第二高電阻層4之試料，與未形成 此第二高電阻層之試料。 耐濕試驗爲在周圔溫度爲2 Ot，且令試驗槽內保持 一定濕度之乾燥器內，浸入氯化鉀水溶液|且將相對濕度 調濕成約8 5%，並將電壓非線性電阻器放置於乾燥器內 6 0小時，並且根據流過D C 1 # A電流之電壓値變化， 判定電壓非線性電阻的良否。此處1變化率（％ )爲以（ V60_V〇)/V〇xl〇◦計算。（V〇=初期電壓 値，V 6 0 =放置6 0小時後之電壓値）= 其結果示於表1。 本紙張尺度適用争國國家標準（CNS)A4規格（210 X 297公爱）.-16- <锖先明讀背面之注意事項再填寫本頁) -裝--------訂---------1 經濟部智慧財產局員工消t合作社印製 4 6 65 0 7 A7 ______；_B7 五、發明說明（14) 表1 經濟部智慧財產局員工消费合作杜印製Q Therefore, when the voltage non-linear resistor is miniaturized by increasing the voltage per unit thickness and reducing the diameter, it is difficult to meet the required protection ability of lightning pulses and over-voltage waves. In order to solve the problems as described above, the present invention provides a voltage non-linear resistor capable of improving the protection ability of waves such as electric pulses and over-voltages by forming a high-resistance layer with high adhesive strength and excellent voltage resistance. Manufacturing method is for its purpose. [Means for Solving the Problems] In order to achieve the above object, the present invention is to obtain a voltage non-linear resistor through the following means and manufacturing method. The first aspect of the invention is a voltage non-linear resistor with a sintered body containing zinc oxide as the main component and a high-resistance layer on the side of the sintered body (please read the precautions on the back before filling this page). ---- Order ----- I --- Printed by the Consumers' Cooperative of the Intellectual Property Bureau of the Ministry of Economics The paper size is applicable to China National Standard (CNS) A4 (210 X 297 mm) -5-Wisdom of the Ministry of Economic Affairs SS5 0 7 A7 _ B7 printed by the property bureau ΛKK Industrial Cooperative Co. V. Description of the invention (3) In the device, the aforementioned high-resistance layer contains A 1 P0! (Aluminum orthophosphate) 1.0 to 25 wt%, Fe2 03 ( It is characterized by 0.1 to 15 wt% of iron, and the component with the most A 1 6S i 2 013 (mollite) among the remaining components. In this kind of voltage non-linear resistor, with the addition of F e 2 0 3 (iron oxide), it can provide moisture resistance and exhibit the quality of stability to the external environment. A second aspect of the invention is a voltage non-linear resistor including a sintered body 1 having zinc oxide as a main component and a high-resistance layer on the side of the sintered body. The high-resistance layer contains A 1 Po 4 (orthophosphoric acid). Al) 1. 〇 ~ 25 redundant 7%,% 11 ~ 62〇 ,! (Ferrite) 0.1 to 15 | 7%, F e2〇; i (iron oxide) 0.1 to 15 wt%, A leS i 2013 (mollite) in the remaining components is the most feature. In this kind of voltage nonlinear resistor, the high-resistance layer can be strongly bonded to the side of the sintered body, and because it can improve the withstand voltage performance, it can exert excellent protection ability against surges such as lightning pulses and overvoltages. The third aspect of the invention is the voltage non-linear resistor corresponding to the first aspect or the second aspect of the invention. The aforementioned high-resistance layer is used as the first high-resistance layer, and S i 〇2 is further formed thereon. (Sandstone) or A 1 203 (alumina) or Si 〇2 (sand stone) with CHaS i 0:, 5 (organosilicate) or A 1 203 (alumina) with CH3S i 〇 ι.5 (organic silicate) or an amorphous second high-resistance layer as a main component. In this kind of voltage non-linear resistor, the first high-resistance layer is shaped — — — — — —In ^-'— — ίί ^ .ι--I ---- line I < Please note this page before filling in this page) This paper size applies the Chinese national standard (CNS > A4 size (210 X 297 mm) " 6-Printed by the Intellectual Property Bureau of the Ministry of Economic Affairs, Industrial and Commercial Cooperation; S 65 Ο 7 Α7 ___ Β7 ___ 5. Description of the invention (4) The second high-resistance layer formed as an amorphous material can improve the withstand voltage performance of the high-resistance layer more than the voltage non-linear resistor invented in the first aspect or the second aspect. The invention of one aspect is the voltage non-linear resistor corresponding to the first aspect or the second aspect of the invention, and the thickness of the high resistance layer is 10 to 1 mm. In such a voltage non-linear resistor, The thickness of the resistance layer is limited to 1 Oym to 1 mm, which can ensure both appropriate bonding strength and good withstand voltage performance. The fifth aspect of the invention is a voltage non-corresponding to the first aspect to the fourth aspect of the invention. In the method of manufacturing a linear resistor, A 1 (H2P〇4) 3 (- In a slurry with Al6Si2O13 (mullite) as the main component, F e 2 03 (iron oxide) or MnF e 2 04 (ferrite) and F e2 0a (iron oxide) are added and mixed to form The mixing process of mixed flow ', the coating process of coating the mixed flow on the side of the sintered body, and the baking process of baking the mixed flow slurry to form the first high-resistance layer. In the manufacturing method of this kind of voltage non-linear resistor, in the slurry with A 1 (H2P〇4) 3 (aluminum generation phosphate) and A1sSi2〇13 (mollite) as the main components, F e203 ( Iron oxide) or MnF e20: i (ferrite) and F e203 (iron oxide) are added and mixed to form a mixed slurry, which is coated on the side of the sintered body and baked to form A. 1 6S i 2〇1: ί (mullite) as the main component, and contains A1PO! (Aluminum orthophosphate), Fe2 03 (iron oxide) or this paper size applies the Chinese Standard (CNS) A4 specification (210 X 297 mm) -7- • Installation ---- I--Order --------^ < Please read the unintentional matter on the back before filling in this page) 4 6 65 Ο 7 Α7 Wisdom of the Ministry of Economic Affairs Printed by the Consumer Cooperative of the Property Bureau _______ Β7 ______ V. Invention Description (5) The first high-resistance layer of Mn F e20_i (ferrite) and F e203 (iron oxide), and is on the side of the sintered body Strong bonding makes voltage non-linear resistors. In the sixth aspect of the invention, in the method for manufacturing a voltage non-linear resistor corresponding to the fifth aspect of the invention, when the aforementioned first high-resistance layer is formed, the average particle size used in the aforementioned hybrid process is 0.01. MnFe2O4 (ferrite) and Fe2O3 (iron oxide) of ~ 10 / im. In the manufacturing method of such a voltage non-linear resistor, the average particle size of MnFe2 04 (ferrite) and Fe2 03 (iron oxide) is limited to 0. 0 1 to 1 0 ym, so that the high resistance layer can be made. It maintains proper uniformity and has excellent withstand voltage performance. The seventh aspect of the invention is the manufacturing method of the voltage non-linear resistor corresponding to the fifth aspect or the sixth aspect of the invention. When the aforementioned first high-resistance layer is formed, after the end of the mixing project, The coating process and the calcination process are finished within hours. In the manufacturing method of such a voltage non-linear resistor, the coating process and the baking process are completed within 100 hours after the end of the mixing process, so that the bonding strength of the first high-resistance layer is not reduced, and the voltage non-linearity is manufactured. Resistor. The eighth aspect of the invention is the manufacturing method of the voltage non-linear resistor corresponding to the fifth aspect to the seventh aspect of the invention. When the aforementioned first high-resistance layer is formed, the aforementioned baking process is based on 2 0 0. ° c ~ 8 0 0 ° c Fan Yi's baking is the characteristic of baking at the highest temperature. In the manufacturing method of this kind of voltage non-linear resistor, it is used for the baking process (please read the precautions on the back before filling out this page), install ------order · *. ^ This paper size applies _ National Standard (CNS) A4 (21〇χ 297mm) --8-Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs ^ 65 0 7 A7 ___; __B7____ V. Description of the invention (6) The maximum baking temperature is in the range of 2000 ~ 800 ° C, so that the high-resistance layer can have excellent adhesive strength and excellent voltage resistance. T The ninth aspect of the invention corresponds to the corresponding In the manufacturing method of the voltage non-linear resistor in the fifth aspect to the eighth aspect, when the aforementioned first high-resistance layer is formed, the aforementioned baking process is started from at least 100 t to the highest temperature. 10 ° C / h! · S ~ 300 ° C / hr s in the range of heating speed. In this type of voltage non-linear resistor manufacturing method, the baking temperature of the baking process is 10 ° C / Baking in the range of hrs ~ 3 0 0 ° C / hrs can make the first high-resistance layer have excellent adhesion strength and excellent The tenth aspect of the invention is a method for manufacturing a voltage non-linear resistor corresponding to the fifth aspect to the ninth aspect of the invention, which includes Si 0 2 (silica) or Al 2 O 3 ( Alumina) and SiOCH3 (alkoxysilane), isopropanol > n-butanol, polysiloxane surfactant and acetic acid as components in an aqueous solution to form the aforementioned sintered body of the aforementioned first high resistance layer The side surface is coated and baked to form a second high-resistance layer. In the manufacturing method of such a voltage non-linear resistor, S 1 〇 2 (silica) or A 12 〇 3 (alumina) or S i 〇 is formed. 2 with CH3S i 〇15 (organic silicate) or A 12〇3 (alumina) and CHsS i Oh 5 (organic silicate) as the main non-crystalline second high-resistance layer can produce withstand voltage characteristics Improved non-linear resistors. This paper is applicable to the national standard of the country < CNS) A4 specification (210 X 297 public «) -9- — — — — —ιιιιιί < * II f III 1 Order-lllllll · ^ Please read the precautions on the back before filling out this page.) ^ 65 0 7 A7 B7 V. Description of the invention (7) The eleventh aspect of the invention is a method for manufacturing a voltage non-linear resistor corresponding to the tenth aspect of the invention. In the baking process, baking is performed at a baking maximum temperature in the range of 50 ° C ~ 800 ° C. In the manufacturing method of such a voltage non-linear resistor, by making the baking maximum temperature of the baking process of the second high-resistance layer within a range of 50 ~ 800 ° C, excellent voltage resistance can be achieved. performance. The twelfth aspect of the invention is a method for manufacturing a voltage non-linear resistor corresponding to the tenth or eleventh aspect of the invention, when the second high resistance layer is formed, so that the baking process starts from at least 30 ° C. Up to the maximum temperature 'Baking is performed at a heating rate in the range of 10 ° C / hrs to 300 t / hr s. In the manufacturing method of such a voltage non-linear resistor, the baking process of the second high-resistance layer 4 is performed. The baking temperature rise rate is in the range of 10 ° C / hr S ~ 300 ° C / hrs, which can achieve excellent voltage resistance performance. Alas, the present invention is not limited to the above aspect. In another aspect of the present invention, the side of the sintered body having zinc oxide as a main component has A 1 e S i 2 0! 3 (mullite) as the main component, and contains a high resistance layer of A1 PCU 5.0 ~ 20wt% and Mη2P0τ or Mη! (P 2 0 r) 3 0.5 ~ 3wt% Voltage non-linear resistor. Furthermore, the invention of another aspect of the present invention is that the side of the sintered body having zinc oxide as a main component has A 1 sS 1 2 13 (mollite) as the paper standard. The national standard (CNS) is applicable. A4 specifications < 210 X 297 mm), ·) 〇. ----------- 'Packing -------- Order --------- i (Qingxian (Please read the note i on the back and fill in this page.) A7: 507 ______B7_ V. Description of the invention (8) The main component, and it contains A1 PO! 5. 〇 ~ 2〇wt% and Mg :) (P 〇1) 2 A high-resistance layer of 0.5 to 3 wt% is a voltage non-linear resistor characterized by it. Furthermore, the invention of another aspect of the present invention is a side surface of a sintered body having zinc oxide as a main component, having A 1 sS i 2〇! 3 (mollite) as a main component, and containing AlP〇4 5,0 ~ 20wt% & C a (P 0 3) 2 0 5 ~ 3wt% high-resistance layer as its characteristic voltage non-linear resistor. Moreover, the invention in other aspects of the present invention corresponds to the item 12 Among the voltage non-linear resistors according to any one of the fourteenth inventions, T 10 £ or F e203 in the high resistance layer is a voltage non-linear resistor having a characteristic of 0.2 to 5 wt%. Furthermore, the invention of another aspect of the present invention is characterized in that, in the above-mentioned other aspects of the invention, Mn F e204 in the high-resistance layer contains 1 to 10 wt%. Furthermore, the invention of another aspect of the present invention is that in the above-mentioned other aspects of the invention, an amorphous high-resistance film having S i 〇2, A 1 203 as a main component is further provided on the high-resistance layer as Its characteristics. Therefore, according to the inventions of the other aspects described above, the adhesion strength between the side of the sintered body and the high-resistance layer can be greatly improved, and stable quality against the external environment can be achieved, and both excellent discharge resistance characteristics and deterioration resistance characteristics can be obtained. Voltage non-linear resistor. Here, the features and effects of the other aspects of the invention are as follows. The size of this paper is applicable to the national standard of domestic standard (CNS) A4 (210 297 mm) II ------- ^ * II --- I ^ '— — — — — I! ^ 1 (谙 先Read the notes on the back and fill out this page) Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs -11-A7 46 65 0 7 _______, ^ ΒΤ .____ V. Description of the invention (9) On the formation of a high resistance layer and oxidation The side of the sintered body with zinc as the main component, with A 1 eS i 2〇ι: 3 (mullite) as the main component, and containing at least one of aluminum sulfate and manganese phosphate, magnesium phosphate, and calcium phosphate The resistor is applied and baked at a temperature range of 150 ~ 600 ° C to form a high-resistance layer. At this time, the high-resistance agent is applied to the side of the sintered body and is wetted. ) Action, the distance between the side parts of the sintered body makes the distance closer > and the addition of other phosphates to aluminum phosphate can increase the wetting effect, so it can increase the adhesive strength. In addition, in order to improve the wettability, the adhesive strength can be increased by appropriately adjusting the mixing ratio of other phosphates in aluminum phosphate. In addition, the second effect is that the characteristics of the high-humidity atmosphere deteriorate. When only the high-resistance agent of aluminum phosphate is used for baking to form a high-resistance layer, an unreacted part of the aluminum phosphate is ionized. If it is placed in a high-humidity atmosphere with a relative humidity of 85%, the high-resistance layer The surface has a more porous structure. Therefore, it absorbs moisture through the pores, and it is easy to cause aggregation on the neck of the particle surface. As a result, the same electric field layer is formed between the counter electrodes, which increases the conductivity and causes the characteristics to deteriorate. On the other hand, the addition of other phosphates to aluminum phosphate has the effect of suppressing the ionization of unreacted aluminum phosphate, and does not deteriorate the characteristics even in a high humidity atmosphere. When the metal oxides Ti02 and Fe203 are added, the same effect can be expected. This is because the metal oxide acts as a catalyst 'and promotes the hardening reaction of the high-resistance agent. This paper size applies to the national standard (CNS > A4 specification (210 * 297 mm) -12- — — — — — — — — — ii-IIIII ί I 511 — — — — r (please read first) Note on the back, please fill in this page again) Consumption Cooperation by Employees of Intellectual Property Bureau of the Ministry of Economic Affairs, printed by Sang Sang Printed by Employee Consumption Cooperative of Intellectual Property Bureau of Ministry of Economic Affairs, printed 466507 A7 B7 V. Description of Invention (10) Furthermore, by adding Mn F e 2 〇4 can enter the relatively porous structure of the high-resistance layer, and can achieve the same effect. Furthermore, on the high-resistance layer, an amorphous material with S i 〇 2 'A 丨 203 as the main component is formed. The resistive film can enter the relatively porous structure of the high-resistance layer. At the same time, because the amorphous high-resistance layer has a water outlet effect, covering the side surface of the sintered body with it can cause the same effect. In order to increase the adhesive force, in addition to improving the wettability of the high-resistance agent on the side of the sintered body, the thermal expansion coefficient of the sintered body and the high-resistance agent must also be matched. The thermal expansion coefficient of the sintered body and the high-resistance agent is too large. High power The peeling of the resist occurs during baking, and excessive heat is generated during discharge tolerance. Therefore, peeling occurs at this time. In the case where the substrate is a sintered body containing zinc oxide as a main component, it is preferably used in a high-resistance agent. A 1 6 S i 2 0! 3 is the main component. [Embodiments of the invention] Hereinafter, embodiments of the present invention will be described with reference to the drawings ^ < First Embodiment > As shown in FIG. 1, the voltage is non-linear. The resistor is provided with a sintered body 1, and first and second high-resistance layers 3 and 4 ′ are formed on a side portion of the sintered body 1, and both flat surfaces are honed to a specified thickness, and brocades are formed on the honed surface. Electrode 2. The manufacturing method of the sintered body 1 is based on ZnO (zinc oxide) of the main component (matrix: matrix), and Bi203 (bismuth oxide). This paper is applicable to the national standard (CNS > A4 specification ( 210 X 297 mm) .13-(Please read the precautions on the back before filling out this page) Installation --- 1 · nn II t. 4 6 65 Ο 7 Α7 Β7 The staff of the Intellectual Property Bureau of the Ministry of Economic Affairs will print the cooperative seal Preparation of the fifth, description of the invention (11) Μ η Ο 2 (manganese oxide) were added 0.5 mole%, c ο 2 〇 3 (oxidation station) 'Ni〇 (nickel oxide), sb203 (antimony trioxide) were added 1 mol% as a raw material. Second,' this raw material is mixed with water and organic binders in a mixing device 'Make a mixed flow slurry. This mixed flow slurry is spray-granulated with a spray dryer' and a granulated powder of a specified weight is placed in a mold and pressurized at a specified pressure. For example, a circular plate having a diameter of 80 mm is formed. Thereafter, in order to remove the added organic binders in advance, the sintered body 1 can be obtained by heat-treating at 400 to 500 ° C in the air and then calcining at 12,000 t. Next, a first embodiment of the first and second high-resistance layers formed on the side surface of the sintered body 1 manufactured as described above will be described. The first high-resistance layer 3 is composed of A sS i 2〇i3 (mullite) as a main component, and contains AIP〇4 (aluminum orthophosphate), 1.0 to 25 wt%, and Fe2O3 (iron oxide). 0.1 to 15% by weight.尙 'Here', the main component (matrix: matrix) is used to mean the largest number of sub-components (in this embodiment, AIP〇4 (aluminum orthophosphate), F e203 (iron oxide)). Ingredients. In the second embodiment to the twelfth embodiment described below, the meaning of the main component also means that the component is the most except the sub-component. The first high-resistance layer 3 composed of such a component can be formed by the following process. First, make a slurry with A 1 (Η 2 Ρ 0 t 3 (—aluminum phosphate) and A i 6 S i 2 0 i 3 (mollite) as the main components. • Read the backnote first Fill in% Good paper standards are applicable to Chinese National Standard (CNS) A4 specifications (210 * 297 mm) -14 4 6 65 Ο 7 Α7 Β7 Printed by the Industrial and Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 5. Description of the invention (12) F e 2 0 3 (iron oxide) is added and mixed to form a mixed slurry (mixing process). Thereafter, this mixed slurry is applied to the side of the sintered body 1 (coating process). This mixed slurry 'Baking' can form the first high-resistance layer 3 (baking process). The second high-resistance layer 4 formed on the first high-resistance layer 3 is Si SiO 2 (silica) or A.丨 2〇3 (alumina) or Si 〇2 (silica) and CHsS i 〇ι.5 (organic silicate) or A 12〇3 (alumina) and CH3S i Oi.s (organic silicate) As the main component, such a second high-resistance layer 4 is formed according to the following process. First, Si02 (silica) or Al203 (alumina) and SiOCH3 (alkoxysilane) are different. C , N-butanol, polysiloxane-based surfactant and acetic acid as components of the aqueous solution | The surface coating of the first high-resistance layer 3 formed on the side of the sintered body 1 (coating process). Thereafter, coating is performed Baking of the aqueous solution to form the second high-resistance layer 3 (baking process). Here, A I6S i 2013 (mollite) is used as the main component, and A1PO4 (aluminum orthophosphate) with different contents described above is used. ), Fe2O3 (iron oxide) is baked as a sub-component to produce several kinds of voltage nonlinear bodies forming the first high-resistance layer | and compare these samples with the sample of the first embodiment. Compare the first According to the embodiment, the surface of the first high-resistance layer 3 having A 1 P04 (aluminum orthophosphate) and F e203 (iron oxide) as auxiliary components is formed with S i 〇2 (silica) or A 12〇3 (aluminum oxide) or Si 〇2 (silica) and CH3S 1 015 (organic silicate) or unstandardized t " China National Standards (CNS) A4 specifications (210 * 297 mm). 15- — '~' II----- I ^ illlm ^ * — — [—— 1 — < Please read the precautions on the back before filling this page > 4 6 65 0 7 A7 B7 V. Description of the invention (13) A 1 2 03 (alumina) and CH3S i 〇. 5 (organic silicate) as the main component of the second high-resistance layer 4 sample, and this second high-resistance is not formed The sample comparison of the layers. That is, 'the production makes AIPOj (aluminum orthophosphate) 0.1, 1, 25, 30wt%, Fe2 03 (iron oxide) is 0.01' 〇1, 1 '15, 20wt% content The combination forms several voltage non-linear resistors of the first high-resistance layer 3. In the first embodiment, the surface of the first local resistance layer 3 formed of A 1 P 0 4 (orthophosphate name) and F e 2 0 3 (iron oxide) as secondary components is prepared and formed with S i 0 2 (silica) or A 1 2 03 (alumina) or S i 02 (silica) and CH3S i 0: .5 (organic silicate) or A 丨 2 03 (alumina) and CH3S i Oi.5 (organic silicate) is the sample of the second high-resistance layer 4 as the main component, and the sample of which the second high-resistance layer is not formed. The humidity resistance test is to immerse the potassium chloride aqueous solution in a desiccator with a temperature of 2 Ot and a certain humidity in the test tank, and adjust the relative humidity to about 8 5%, and place the voltage non-linear resistor In the desiccator for 60 hours, and determine whether the voltage non-linear resistance is good or not according to the change of the voltage 値 flowing through the DC 1 # A current. Here, the 1 change rate (%) is calculated as (V60_V〇) / V0 × 10. (V〇 = initial voltage 値, V 6 0 = voltage after 60 hours of standing 値) = The results are shown in Table 1. This paper size applies to the national standard (CNS) A4 specification (210 X 297 public love). -16- < 锖 Please read the precautions on the back before filling out this page) -Install -------- Order --------- 1 Printed by the Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 4 6 65 0 7 A7 ______; _B7 V. Description of Invention (14) Table 1 Consumption Cooperation of Employees of the Intellectual Property Bureau of the Ministry of Economic Affairs

試料 編號 第1層，副成分含量 (w t %) 第2層之狀態（主成分） 耐濕特性 (96) 評價 A 1 P 0 4 F e 2 0 3 1 0 . 1 0.01 i\w —8 0 X 2 0 . 1 Λ\ 1Γ ittt / i SS -56 X 3 ft 15 •far mi. /\w -44 X 4 ff 2 0 Aw r H1I v» 〇> -4 1 X 5 1.0 0.01 M > t % % -8 2 X 6 ff 0 . 1 ΤΤΤΓ •MS、 -1.0 〇 7 // /f S i 〇2 -0.4 ◎ 8 續 ff A 1 2〇3 -0.4 ◎ 9 ff S i O2+CH3S i Ο1.5 —0 · 3 ◎ 10 A 1 2O3+CH3S i Oi.〇 -0.3 ◎ 11 ff 15 te !\\\ -1.0 〇 12 fr 2 0 並 t t —5 1 X 13 2 5 0.01 A\ 11' 無 -7 9 X 1 4 // 0.1 Jilt.! -7 4 X 15 15 ίΕ / \ \\ -5 0 X 16 2 0 並 > t 1 \ -4 3 X 17 3 0 0.01 te VI·.% -8 1 X 18 0.1 4ff y t -74 X 19 ft 15 M > 11、 -52 X 2 0 2 0 te -46 X <請先閱讀背面之注意事項再填寫本頁) I 丨一I I--訂*--------地 本紙張尺度適用中國國家標準（CNS)ii規ϋΐ0= 297公ίΰ - 17 - 經濟部智慧財產局負工消费合作社印製 46 650 7 A7 --------B7 五、發明說明（15> 第一實施形.態之該試料，即具有A 1 p〇4 (正磷酸ig )含量爲1 ，Ο ’ 25wt%，Fe2〇3 (氧化鐵）含量 爲Ο ‘ 1 ’ 15wt%之第一高電阻層3之試料（表~1 中試料編號6〜11)，可知令耐濕特性提高。 相對地’上述以外之試料，耐濕特性爲比初期値，產 生一 4 0至~ 8 0%左右之變化率，並且察見大幅的惡化 0 又’第一實施形態之該含量的a 1 P 0 4 (正磷酸鋁） ’ F e 2 ◦ 3 (氧化鐵）作爲副成分所形成之第一高電阻層 3上’形成以S i 〇2 (砂石）或a 1 2〇3 (氧化錯）或 S 1 〇2 C矽石）和CH3S i 0^5 (有機矽酸鹽）或 A i 2〇3 (氧化鋁）和ch3S 1 〇15 (有機矽酸鹽） 作爲主成分之第二高電阻層4之試料（表1中試料編號7 至1 0 )爲令耐濕特性更加提高。 耐濕特性之惡化爲通過側面高電阻層存在之氣孔吸收 水分’並且易於粒子表面上之頸部引起凝集。其結果，於 對向電極間形成一樣的電場層，使得導電度增加，並且引 起特性惡化。藉由添加適量的F e 2 0 3 (氧化鐵），則可 防止粒子表面上之頸部的凝集，且其結果令耐濕特性提高 〇 如以上之結果所闡明般，第一實施形態爲藉由具備以 A 1 6S i 2〇13 (模來石）作爲主成分，且含有 Ai P〇4 (正磷酸鋁）含量爲1 . 0〜25wt%， F e2〇3 (氧化鐵）含量爲0 . 1〜1 5wt%之第一高 ϋ ^ n n — — — — — I 1. .* 4 I n f I I a— I I ^ «I I I ϋ ]« · ^ (諳先M讀背面之注*項再填寫本頁) 本紙張尺度適用t困0家標準（CNS)A4株格(210 X 297公釐） -18 - A7 46 650 7 ___B7_ 五、發明說明（16) 電阻層3，而令耐濕特性提高。 (請先《讀背面之注意事項再填寫本頁) 更且，藉由形成以S i〇2 (矽石）或Al2〇3 (氧 化鋁）或S 1 〇2 (矽石）和CH3S i CM.5 (有機矽酸 鹽）或A 1 2 0 i (氧化鋁）和C H i S i Ο 1 5 (有機矽 酸鹽）作爲主成分之第二高電阻層4，則可令此些成分進 入第一高電阻層的空隙，令撥出性能提高，並且令耐濕特 性提高。 以上，雖記述僅以A〖6 S i 2 0 [ 3 (模來石）’ Α1Ρ〇4(正磷酸鋁），Fe2〇3(氧化鐵）作爲成分 之第一高電阻層3之成分例，但於加入其他T 1 0 2 (氧化 鈦）之其他抑制第一高電阻層之粒子表面上之頸部凝集之 成分情況，亦可藉由令Α1Ρ〇4(正磷酸鋁）， F e 2〇3 (氧化鐵）含量爲在上述之範圍中，實現耐濕特 性之提高。 <第二實施形態> 經濟部智慧財產局貝工消费合作杜印製 本實施形態之電壓非線性電阻器之構造雖與第一實施 形態相同，但其高電阻層3，4之成分不同。以下，參照 圖，說明關於本發明第二實施形態之電壓非線性電阻器。 i 1所示之電壓非線性電阻器爲具備燒結體1 ，且於 此燒結體1之側面形成第一及第二高電阻層3及4，並且 將兩平坦面硏磨至指定厚度，於此硏磨面上形成鋁電極2 〇 ^ 本發明之電壓非線性電阻器的實施形態完全爲關於第 ϋ尺度用令國國家楳準<CNS)A4規格（210 X 297公釐）. ΓΪ9 - ' 4 6 650 7 A7 __ * B7 五、發明說明（17) 一及第二高電阻層3及4，但於其之前，首先敘述關於燒 結體1的製造工程。 即，相對於主成分Z nO (氧化鋅），將Bi2〇3( 氧化鉍），Μ η 0 2 (氧化錳）分別添加0 . 5莫耳， C〇2〇:3(氧化鈷），NiO (氧化鎳），Sb2〇3 (三 氧化銻）分別添加1莫耳％作爲原料》 其次，將此原料與水及有機物粘合劑類共同以混合裝 置予以混合，作成混合流漿。將此混合流漿以噴霧乾燥器 進行噴霧造粒，並將指定重量之製粒粉放入模具中，以指 定之壓力加壓，例如成形爲直徑8 0 mm之圓板狀。其後 ，爲了預先除去所添加的有機粘合劑類，乃在空氣中以 400〜500 °C熱處理，並再以1 200 °C煅燒，則可 取得燒結體1 = 其次，說明關於如上述製造之燒結體1側面所形成之 第一及第二側面高電阻層的第二實施形態。第一高電阻層 3爲以A i 6S i 2〇13 (模來石）作爲主成分，且以含有 A 1 P〇4 (正磷酸銘），1 · 0 〜25wt%， MnFe2〇4 (鐵素體）0 . 1 〜15wt%， F e2〇3 (氧化鐵）0 · 1〜15wt%之成分所構成》 此類成分所構成的第一高電阻層3，可依如下之工程 而形成。 首先，製作以A i (HsPO.,) 3 (—代磷酸鋁）與 A〖6 S i 2 0 1 3 (模來石）作爲主成分之流锻，並於此流 漿中加入MnF e2〇4 (鐵素體）及F e2〇3 (氧化鐵） 本紙張尺度適用令國國家標準（CNS)A4規格（210 X 297公釐> .2〇- <請先《讀背面之it意事項再填茸本頁) I -裝--------訂---------^ 經濟部智慧財產局貝工消费合作社印製 經濟部智慧財產局員工消费合作社印製 4 6 65 0 7 A7 B7 五、發明說明（18) 、且混合作成混合流漿（混合工程）。其後’將此混合流 漿於燒結體1之側面塗佈（塗佈工程）。將此混合流發進 行烘烤，則可形成第一高電阻層3 (烘烤工程）° 又，於第一高電阻層3上所形成的第二高電阻層4爲 以S i 〇2 (矽石）或A 1 2〇3 (氧化鋁）或S 1 〇2 (砂 石）和CH3S i CM.3 (有機矽酸鹽）或A 12〇3 (氧 化鋁）和CH3S i 〇1. 5 (有機矽酸鹽）作爲主成分。此 類第二高電阻層4爲依下列工程所形成。 首先，將S i 〇2 (矽石）或Α 12〇3 (氧化鋁）和 S i 〇CH3 (烷氧基矽烷），異丙醇，正丁醇，聚矽氧院 系界面活性劑及醋酸作爲成分之水溶液’於燒結體1側面 所形成之第一高電阻層3之表面塗佈（塗佈工程其後 »進行塗佈水溶液的烘烤，形成第二高電阻層4 (烘烤工 程）。 此處，以A 16S 1 2〇13 (模來石）作爲主成分，並 以前述含量不同之Α1Ρ〇4(正磷酸鋁），Sample No. 1st layer, content of auxiliary components (wt%) State of 2nd layer (main component) Moisture resistance (96) Evaluation A 1 P 0 4 F e 2 0 3 1 0. 1 0.01 i \ w —8 0 X 2 0. 1 Λ \ 1Γ ittt / i SS -56 X 3 ft 15 • far mi. / \ W -44 X 4 ff 2 0 Aw r H1I v »〇 > -4 1 X 5 1.0 0.01 M > t%% -8 2 X 6 ff 0 .1 ΤΤΤΓ • MS, -1.0 〇7 // / f S i 〇2 -0.4 ◎ 8 Continued ff A 1 2〇3 -0.4 ◎ 9 ff S i O2 + CH3S i 〇1.5 —0 · 3 ◎ 10 A 1 2O3 + CH3S i Oi.〇-0.3 ◎ 11 ff 15 te! \\\ -1.0 〇12 fr 2 0 and tt —5 1 X 13 2 5 0.01 A \ 11 ' None -7 9 X 1 4 // 0.1 Jilt.! -7 4 X 15 15 ίΕ / \ \\ -5 0 X 16 2 0 union > t 1 \ -4 3 X 17 3 0 0.01 te VI ·.% -8 1 X 18 0.1 4ff yt -74 X 19 ft 15 M > 11, -52 X 2 0 2 0 te -46 X < Please read the notes on the back before filling this page) I 丨 一 I I- -Order * -------- The paper size of the local paper applies the Chinese National Standard (CNS) ii regulations 0 = 297 public liters-17-Printed by the Consumers ’Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 46 650 7 A7 --- ----- B7 V. Description of the Invention (15 > According to an embodiment, the sample has a first high resistance of A 1 p04 (orthophosphate ig) content of 1, 0 '25wt%, and Fe2O3 (iron oxide) content of 0' 1 '15wt%. Samples of layer 3 (sample Nos. 6 to 11 in Table ~ 1) show that the moisture resistance characteristics are improved. Relative to the samples other than the above, the moisture resistance characteristics are higher than those of the initial stage, resulting in about 40 to 80%. Rate of change, and a significant deterioration was observed. Also, the content of a 1 P 0 4 (aluminum orthophosphate) of the first embodiment, F e 2 ◦ 3 (iron oxide) was the first high resistance formed as a secondary component. Layer 3 'is formed with S i 〇2 (sandstone) or a 1 203 (oxidized oxide) or S 1 〇2 C silica) and CH3S i 0 ^ 5 (organic silicate) or A i 2〇 3 (alumina) and ch3S 1 015 (organic silicate) The second high-resistance layer 4 as the main component (sample Nos. 7 to 10 in Table 1) was used to further improve the moisture resistance characteristics. The deterioration of the moisture resistance characteristic is that moisture is absorbed through the pores present in the side high-resistance layer, and the neck portion on the particle surface is liable to cause aggregation. As a result, the same electric field layer is formed between the counter electrodes, the conductivity is increased, and the characteristics are deteriorated. By adding an appropriate amount of Fe 2 0 3 (iron oxide), the neck agglomeration on the particle surface can be prevented, and as a result, the moisture resistance characteristics are improved. As explained in the above results, the first embodiment is to borrow It contains A 1 6S i 2〇13 (mollite) as the main component, and contains Ai P〇4 (aluminum orthophosphate) content of 1.0 to 25% by weight, and F e203 (iron oxide) content of 0 1 ~ 1 5wt% of the first high ϋ nn — — — — — I 1.. * 4 I nf II a— II ^ «III«] «· ^ (谙 M read the note on the back * before filling (This page) The paper size is applicable to 0 standards (CNS) A4 strain (210 X 297 mm) -18-A7 46 650 7 ___B7_ V. Description of the invention (16) Resistance layer 3, which improves the moisture resistance characteristics . (Please read "Notes on the back side before filling out this page.") Furthermore, by forming S i〇2 (silica) or Al2 03 (alumina) or S 1 02 (silica) and CH3S i CM .5 (organic silicate) or A 1 2 0 i (alumina) and CH i S i Ο 1 5 (organic silicate) as the second high-resistance layer 4 as the main component, these components can enter The gap of the first high-resistance layer improves the draw-out performance and improves the moisture resistance characteristics. In the above, although the composition example of the first high-resistance layer 3 using A 〖6 S i 2 0 [3 (mullite) 'Α1PO4 (aluminum orthophosphate) and Fe2O3 (iron oxide) as components has been described, However, in the case of adding other T 1 0 2 (titanium oxide) and other components that inhibit the aggregation of the neck on the surface of the particles of the first high-resistance layer, it is also possible to make A1PO4 (aluminum orthophosphate), F e 2〇 The content of 3 (iron oxide) is within the above-mentioned range, and improvement in moisture resistance characteristics is achieved. < Second embodiment > Although the structure of the voltage non-linear resistor of this embodiment is the same as that of the first embodiment, the structure of the voltage non-linear resistor in this embodiment of the Intellectual Property Bureau of the Intellectual Property Bureau of the Ministry of Economic Affairs is different. . Hereinafter, a voltage nonlinear resistor according to a second embodiment of the present invention will be described with reference to the drawings. The voltage non-linear resistor shown in i 1 is provided with a sintered body 1, and first and second high-resistance layers 3 and 4 are formed on the side of the sintered body 1, and the two flat surfaces are honed to a specified thickness. Here, The aluminum electrode 2 is formed on the honing surface. The embodiment of the voltage non-linear resistor of the present invention is completely related to the third dimension of the national standard < CNS) A4 specification (210 X 297 mm). ΓΪ9-' 4 6 650 7 A7 __ * B7 V. Description of the invention (17) First and second high-resistance layers 3 and 4, but before that, the manufacturing process of the sintered body 1 will be described first. That is, Bi 2 O 3 (bismuth oxide) and M η 0 2 (manganese oxide) were added to 0.5 mol, Co 2 0: 3 (cobalt oxide), and NiO to the main components Z nO (zinc oxide). (Nickel oxide) and Sb203 (antimony trioxide) were each added with 1 mol% as the raw material. Next, this raw material was mixed with water and organic binders in a mixing device to prepare a mixed slurry. This mixed slurry is spray-granulated with a spray dryer, and a granulated powder of a specified weight is put into a mold and pressurized with a specified pressure, for example, it is formed into a disc shape with a diameter of 80 mm. Thereafter, in order to remove the added organic binders in advance, heat treatment is performed at 400 to 500 ° C in the air, and then calcined at 1 200 ° C to obtain a sintered body 1 = Next, the manufacturing process described above will be described. A second embodiment of the first and second high-resistance layers formed on the side of the sintered body 1. The first high-resistance layer 3 contains A i 6S i 2013 (mollite) as a main component, and contains A 1 P04 (orthophosphate), 1 · 0 to 25% by weight, MnFe2 04 (iron Element body) 0.1 to 15% by weight, and Fe203 (iron oxide) 0. 1 to 15% by weight. The first high-resistance layer 3 composed of such components can be formed by the following process. First, a flow forging with A i (HsPO.,) 3 (-aluminum phosphate) and A 〖6 S i 2 0 1 3 (mollite) as main components is prepared, and MnF e2 is added to this slurry. 4 (ferrite) and F e203 (iron oxide) The paper size is applicable to the national standard (CNS) A4 specification (210 X 297 mm) > .20- < Please read the "It's on the back" Matters need to be filled out on this page) I-Packing -------- Order --------- ^ Printed by Shelley Consumer Cooperative of Intellectual Property Bureau of the Ministry of Economy 4 6 65 0 7 A7 B7 5. Description of the invention (18), and mixed to make a mixed slurry (mixed engineering). Thereafter, this mixed slurry is applied to the side surface of the sintered body 1 (coating process). By baking the mixed flow, the first high-resistance layer 3 (baking process) can be formed. In addition, the second high-resistance layer 4 formed on the first high-resistance layer 3 is S i 〇 2 ( Silica) or A 1 203 (alumina) or S 1 〇2 (sandstone) and CH3S i CM.3 (organic silicate) or A 12〇3 (alumina) and CH3S i 〇1.5 (Organosilicate) as the main component. This second high-resistance layer 4 is formed by the following processes. First, Si 〇2 (silica) or A 12〇3 (alumina) and Si 〇CH3 (alkoxysilane), isopropanol, n-butanol, polysiloxane surfactant and acetic acid The aqueous solution as a component is applied to the surface of the first high-resistance layer 3 formed on the side of the sintered body 1 (coating process thereafter »baking the coating aqueous solution to form a second high-resistance layer 4 (baking process) Here, A 16S 1 2013 (mollite) is used as the main component, and A1PO4 (aluminum orthophosphate) with different contents as described above,

MnF e2〇4 (鐵素體）及F e2〇3 (氧化鐵）作爲副成 分進行烘烤，製作形成第一高電阻層之數種的電壓非線性 體作爲試料，並將此些試料與第二實施形態之該試料比較 〇 將第二實施形態之該含量之A 1 P 0 ,(正磷酸鋁）， MnFVe2〇.·!(鐵素體）及F e2〇3 (氧化鐵）作爲副成 分的第一高電阻層3之表面，形成以S i 02 (矽石）或 A 1 2 0 3 (氧化鋁）或S i 0 2 (矽石）與 本紙張尺度適用令8國家標準（CNS)A4規格（210 X 297公釐） -21 - <請先閱讀背面之注意事項再填寫本頁) -I * I I I ! I I I ^ ·111!!MnF e204 (ferrite) and F e203 (iron oxide) were baked as auxiliary components, and several kinds of voltage nonlinear bodies forming the first high-resistance layer were prepared as samples, and these samples were compared with the first Comparison of the sample in the second embodiment 〇 The content of A 1 P 0, (aluminum orthophosphate), MnFVe2 (ferrite), and F e203 (iron oxide) as the secondary components in the second embodiment The surface of the first high-resistance layer 3 is formed with S i 02 (silica) or A 1 2 0 3 (alumina) or S i 0 2 (silica) with this paper standard applicable order 8 National Standards (CNS) A4 specifications (210 X 297 mm) -21-< Please read the notes on the back before filling this page) -I * III! III ^ · 111 !!

A 4 6 650 7 A7 ____ B7 五、發明說明（19) CH3S i 〇!.5 (有機矽酸鹽）或A 1 2〇3 (氧化銘） <锖先閱讀背面之注意事項再填寫本頁> 與CHaS i 〇,.5 (有機矽酸鹽）作爲主成分之第二高電 阻層4之試料，與未形成此第二高電阻層之試料比較。 即，製作令AlP〇4(正磷酸鋁）爲〇,1 ， i , 25，3〇wt%，MnFe2〇.t (鐵素體）爲 〇 . 1， 1 ，15 ，2〇wt%，Fe2〇3 (氧化鐵）爲 〇 〇1 ，〇 · 1 ’ 1 ’ 15，2〇wt%含量組合之形成數種第 一高電阻層3的電壓非線性電阻器》 又，於第二實施形態之該含量之A 1 P〇4 (正磷酸錯 )，MnFe2〇4(鐵素體）及Fe2〇3(氧化鐵）作爲 副成分所形成的第一高電阻層3之表面，製作形成以 S 1 〇2 (矽石）或A 12〇3 (氧化鋁）或s i 〇2 (矽石 )和CHsS i Οι.5 (有機砂酸鹽）或A 1 2〇3 (氧化 鋁）和CH3S i Oi.s (有機矽酸鹽）作爲主成分之第二 局電阻層4之試料，與未形成此第二高電阻層之試料。 經濟部智慧財產居貝工消费合作杜印製 對於如此所分別製作的各試料，將8 / 2 0 v S波形 之脈衝電流以6 0 k A至1 〇 kA外加，且測定破壞試料 之電流値並且進行各試料的過電壓保護能力。其結果示於 表2及表3。 本紙張尺度適用t ®國家標準（CNS)A4規格（210 X 297公« Γ -22- A7 4 6 65 0 7 _____B7 五、發明說明（20) 〔表2〕 經濟部智慧財產局貝工消费合作社印製A 4 6 650 7 A7 ____ B7 V. Description of the Invention (19) CH3S i 〇! .5 (Organic Silicate) or A 1 2〇3 (Oxidation) < 锖 Please read the notes on the back before filling this page > A sample of the second high-resistance layer 4 with CHaS i 0, .5 (organic silicate) as a main component was compared with a sample without the second high-resistance layer. That is, the production was such that AlP04 (aluminum orthophosphate) was 0.1, i, 25, 30wt%, and MnFe20.t (ferrite) was 0.1, 1, 15, 20wt%, Fe2. 〇3 (iron oxide) is a combination of 0.001, 0.1'1'15, and 20% by weight to form several types of voltage non-linear resistors of the first high-resistance layer 3. In addition, in the second embodiment, The content of the surface of the first high-resistance layer 3 formed by A 1 Po4 (orthophosphate), MnFe2O4 (ferrite), and Fe2O3 (iron oxide) as auxiliary components is produced and formed with S 1 〇2 (silica) or A 12〇3 (alumina) or si 〇2 (silica) and CHsS i 〇ι.5 (organic oxalate) or A 1 203 (alumina) and CH3S i Oi. s (organic silicate) is the sample of the second resistive layer 4 as the main component, and the sample of which the second high-resistance layer is not formed. For the samples produced in this way, Du printed by the intellectual property of Jubei, the intellectual property of the Ministry of Economic Affairs, applied a pulse current of 8/20 v S waveform to 60 k A to 10 kA, and measured the current that destroyed the sample. In addition, the overvoltage protection capability of each sample was performed. The results are shown in Tables 2 and 3. This paper size is applicable to t ® National Standard (CNS) A4 specifications (210 X 297 male «Γ -22- A7 4 6 65 0 7 _____B7 V. Description of the invention (20) [Table 2] Shellfish Consumer Cooperatives, Bureau of Intellectual Property, Ministry of Economic Affairs Print

試料 編號 第" 罾，副成分含量(wt%) 第2層之狀態 (主成分） 脈衝破壞値(Ka) 評價 Α1Ρ〇4 WnFe：〇3 Fe2〇i 1 0 · 1 0 · 0 1 0 · 0 1 Μ 10 0 X 2 ff ff 0 · 1 4rtr m 110 X 3 ff ft 15 llil! 110 X 4 η ff 20 / n · 10 0 X 5 ff 0 1 0-01 •fin* 1I1L i > Ί 110 X 6 η 0 · 1 4E > 1 2 0 X 7 ft 15 j\w 1 30 X 8 ft 20 M /MS 110 X 9 V 15 0 · 0 1 M / Ί1! 110 X 10 /y 0 · 1 •τΠΤ 13 0 X 11 » 15 M / \ 12 0 X 12 ff /t 2 0 無 110 X 13 ff 2 0 0 · 0 1 無 10 0 X 14 tf ff 0 1 無 1 2 0 X 15 /f ft 15 Μ 110 X 16 ff f* 2 0 Μ / ι % ·. 10 0 X 17 1 · 0 0-01 0 · 0 1 Αίτ 無 10 0 X 18 ff ft 0-1 1川： 〆 I » ·» 12 0 X 19 Jf ff 15 Μ ^ t ti 110 X 2 0 ff ff 2 0 Μ / \ ^ 10 0 X 2 1 ff 0 1 0-01 1 2 0 X 2 2 ff 0 · 1 無 1 70 〇 2 3 ft » ff S ι 〇2 19 0 ◎ 2 4 » ff ft A 1 2 〇 3 19 0 ◎ 2 5 ff ff ft Si〇2+CH3SiOi.5 2 0 0 ◎ 2 6 // ff ff Ab〇3+CHjSiOi.5 2 0 0 ◎ 2 7 ff tf 15 無 18 0 〇 2 8 ff ft 2 0 無 1 2〇 X 2 9 15 0-01 曲ί > Μ \ 12 0 X 3 0 〇· 1 無 1 8 0 〇 3 1 V // 15 Μ / 1 \ < 18 0 〇 3 2 ff 2 0 ArrC 3Jtu 12 0 X 3 3 rr 2 0 0-01 無 1 1 0 X 3 4 ff 0 · 1 Μ /1 > \ 12 0 X 3 5 tf 15 無 1 20 X 3 6 ft 2 0 Μ 110 X 11 '裝 --------訂·--------ίίξ C請先《讀背面之注意事項再填寫本頁) 本紙張尺度適用t國固家標準（CNS)A4規格（210 X 297公釐） -23 - ο 5 6 6 4 Α7Β7 經濟部智慧財產局員工消费合作社印數Sample No. " 罾, content of auxiliary components (wt%) State of the second layer (main component) Pulse destruction 値 (Ka) Evaluation Α1Ρ〇4 WnFe: 〇3 Fe2〇i 1 0 · 1 0 · 0 1 0 · 0 1 Μ 10 0 X 2 ff ff 0 · 1 4rtr m 110 X 3 ff ft 15 llil! 110 X 4 η ff 20 / n · 10 0 X 5 ff 0 1 0-01 • fin * 1I1L i > Ί 110 X 6 η 0 · 1 4E > 1 2 0 X 7 ft 15 j \ w 1 30 X 8 ft 20 M / MS 110 X 9 V 15 0 · 0 1 M / Ί1! 110 X 10 / y 0 · 1 • τΠΤ 13 0 X 11 »15 M / \ 12 0 X 12 ff / t 2 0 without 110 X 13 ff 2 0 0 · 0 1 without 10 0 X 14 tf ff 0 1 without 1 2 0 X 15 / f ft 15 Μ 110 X 16 ff f * 2 0 Μ / ι% ·. 10 0 X 17 1 · 0 0-01 0 · 0 1 Αίτ none 10 0 X 18 ff ft 0-1 1 Sichuan: 〆I »·» 12 0 X 19 Jf ff 15 Μ ^ t ti 110 X 2 0 ff ff 2 0 Μ / \ ^ 10 0 X 2 1 ff 0 1 0-01 1 2 0 X 2 2 ff 0 · 1 None 1 70 〇 2 3 ft »ff S 〇 2 19 0 ◎ 2 4 »ff ft A 1 2 〇3 19 0 ◎ 2 5 ff ft Si〇2 + CH3SiOi. 5 2 0 0 ◎ 2 6 // ff ff Ab〇3 + CHjSiOi. 5 2 0 0 ◎ 2 7 ff tf 15 None 18 0 〇 2 8 ff ft 2 0 None 1 2〇X 2 9 15 0-01 曲 ί > Μ \ 12 0 X 3 0 〇 · 1 None 1 8 0 〇3 1 V // 15 Μ / 1 \ < 18 0 〇3 2 ff 2 0 ArrC 3Jtu 12 0 X 3 3 rr 2 0 0-01 None 1 1 0 X 3 4 ff 0 · 1 Μ / 1 > \ 12 0 X 3 5 tf 15 None 1 20 X 3 6 ft 2 0 Μ 110 X 11 ' Loading -------- Order · -------- ίίξ C Please read the “Notes on the back side before filling out this page) This paper size is applicable to the national solid standard (CNS) A4 specification (210 X 297 mm) -23-ο 5 6 6 4 Α7Β7 Number of prints from the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs

五、發明說明（21) 〔表3〕 試料 第U 罾，副成分含量(wt%) 第2層之狀態 脈衝破壞値(Ka) 評價 編號 Α1Ρ〇4 WnFe2〇3 Fe2〇3 (主成分） 3 7 2 5 0 0 1 0 · 0 1 ίΕ 1 1 0 X 3 8 ff ft 0 · 1 無 1 2 0 X 39 » ff 15 赃 1 30 X 4 0 ft ff 2 0 Μ J \ i\ 1 10 X 4 1 fr 0 · 1 0-01 inf. ΤΓΠ： 1 2 0 X 4 2 tf V 0 · 1 ffiE 1 70 〇 4 3 Jf 15 iE Vis、 1 8 0 〇 4 4 ff ff 2 0 迦 '1、·ν 1 20 X 4 5 1 5 0-01 ίΕ 12 0 X 46 // ft 0 · 1 無 1 70 〇 4 7 ft 15 te / 1 vs 1 7 0 〇 4 8 ft- /* S 1 〇2 1 9 0 4 9 ft A 1 2 〇 3 1 9 0 ◎ 5 0 Si〇2+CH3SiOi.5 2 00 ◎ 5 1 ff Al2〇3+CH;S 丨〇l.5 1 9 0 ◎ 5 2 // 2 0 M J it\ 1 2 0 X 5 3 20 0-01 M 1 10 X 5 4 辣 0 · 1 無 1 3 0 X 5 5 // /f 15 M / k 1 \ 1 2 0 X 5 6 ff 2 0 flE 1 1 0 X 5 7 3 0 0 · 0 1 0 · 0 1 無 1 0 0 X 5 8 0 · 1 λΜ 1' ΙΙΙΙρ t \ 1 10 X 5 9 ff 15 無 1 20 X 6 0 ff 2 Q M J i\\ 1 0 0 X 6 1 // 0 1 0-01 M / L \ < 1 10 X 6 2 /f 0 · 1 M j i vs 1 30 X 6 3 // 15 M J \ i\ 1 2 0 X 6 4 V ff 2 0 M / ΐ 1 \ 1 10 X 6 5 n 15 0-01 Sic 無 1 10 X 6 6 ff 0 1 4E 1 2 0 X 6 7 // 〃 15 M J » i\ 1 3 0 X 6 8 ff 2 0 fnT. ΤΤΤΓ 1 10 X 6 9 2 0 0-01 M 1 0 0 X 7 0 ft ft 0 · 1 te 1 10 X 7 1 ff ff 15 M y\W 1 2 0 X 7 2 〃 fr 2 0 M / 1 ·«、 1 0 0 X (請先Μ讀背面之注意事項再填寫本頁) 本紙張尺度適用十國國家標準<CNS)A4規格（210 X 297公* ) -24-V. Description of the invention (21) [Table 3] Sample U 罾, content of auxiliary components (wt%) State pulse destruction 脉冲 (Ka) of the second layer Evaluation number A1PO4 WnFe2〇3 Fe2〇3 (main component) 3 7 2 5 0 0 1 0 · 0 1 ίΕ 1 1 0 X 3 8 ff ft 0 · 1 None 1 2 0 X 39 »ff 15 Loot 1 30 X 4 0 ft ff 2 0 Μ J \ i \ 1 10 X 4 1 fr 0 · 1 0-01 inf. ΤΓΠ: 1 2 0 X 4 2 tf V 0 · 1 ffiE 1 70 〇4 3 Jf 15 iE Vis, 1 8 0 〇4 4 ff ff 2 0 1 20 X 4 5 1 5 0-01 ίΕ 12 0 X 46 // ft 0 · 1 None 1 70 〇 4 7 ft 15 te / 1 vs 1 7 0 〇 4 8 ft- / * S 1 〇 2 1 9 0 4 9 ft A 1 2 〇3 1 9 0 ◎ 5 0 Si〇2 + CH3SiOi. 5 2 00 ◎ 5 1 ff Al2〇3 + CH; S 丨 〇l. 5 1 9 0 ◎ 5 2 // 2 0 MJ it \ 1 2 0 X 5 3 20 0-01 M 1 10 X 5 4 Spicy 0 · 1 None 1 3 0 X 5 5 // / f 15 M / k 1 \ 1 2 0 X 5 6 ff 2 0 flE 1 1 0 X 5 7 3 0 0 · 0 1 0 · 0 1 none 1 0 0 X 5 8 0 · 1 λΜ 1 'ΙΙΙΙρ t \ 1 10 X 5 9 ff 15 none 1 20 X 6 0 ff 2 QMJ i \\ 1 0 0 X 6 1 // 0 1 0-01 M / L \ < 1 10 X 6 2 / f 0 · 1 M ji vs 1 30 X 6 3 // 15 MJ \ i \ 1 2 0 X 6 4 V ff 2 0 M / ΐ 1 \ 1 10 X 6 5 n 15 0-01 Sic None 1 10 X 6 6 ff 0 1 4E 1 2 0 X 6 7 // 〃 15 MJ »i \ 1 3 0 X 6 8 ff 2 0 fnT. ΤΤΤΓ 1 10 X 6 9 2 0 0-01 M 1 0 0 X 7 0 ft ft 0 · 1 te 1 10 X 7 1 ff ff 15 M y \ W 1 2 0 X 7 2 〃 fr 2 0 M / 1 · «, 1 0 0 X (Please read the precautions on the back before filling out this page) This paper size applies to ten countries National Standard < CNS) A4 Specification (210 X 297 male *) -24-

4 6 65 Ο 7 五、發明說明（22) 第一貫施形態之該試料，即，具有A i Ρ 〇 Ί (正磷酸 銘）含量爲1 ，25wt%，MnFe204(鐵素體）含 量爲1 ，15wt%, Fe2〇3 (氧化鐵）含量爲〇 . 1 1 1 5wt%之第一高電阻層3之試料（表1及表2中之 試料編號 2 2 ’ 2 7 ’ 3 〇，3 1，4 2，4 3 , 4 6， ^ 7 )爲經由外加高至1 7 〇以上之脈衝電流而產生 破壞。 相對地’上述以外之試料，爲經由外加1 〇 〇〜 1 3 0 k A較低之脈衝電流而產生破壞。又，於第二實施 形態之該含量A丨PO 4 (正磷酸鋁），MnF e2〇4 ( 鐵素體）及F e 2 Ο 3 (氧化鐵）作爲副成分所形成之第— 咼電阻層3之表面’形成以S i 〇2 (矽石）或A 1 (氧化鋁）或S 1〇2 (矽石）和ch3S i 〇15 (有機 矽酸鹽）或A 1 2〇3 (氧化鋁）與ch3S i Oi.s (有 機矽酸鹽）作爲主成分之第二高電阻層4之試料（表1及 表2中之23〜26 ’ 48〜51)爲經由外加極高之 1 9 0〜2 0 0 kA脈衝電流而產生破壞。 如上述結果所闡明般，第二實施形態爲藉由具備以 Al6s i2〇13 (模來石）作爲主成分，含有A 1 P〇4 (正磷酸鋁）1 . 0〜25wt%，MnFe2〇.i (鐵素 體）0 1 〜15wt%，Fe2〇3 (氧化鐵）Ο · 1 〜 1 5 w t %之第一高電阻層3，則可使得此第一高電阻層 3於燒結體1之側面強力粘合，提高耐電壓性能。 因此，可知電壓非線性電阻器對於脈衝電流之保護能 <請先閱讀背面之注意事項再填寫本頁) -裝 — III 訂·! 經濟部智慧財產局員工消费合作社印製 本紙張尺度適用令國國家標準（CNS)A4規格（210 X 297公* ) - 25 - Α7 Ο 65 0 7 Β7_ 五、發明說明（23) 力爲飛躍地提高。又，藉由形成s i 〇2 (矽石）或 A 12〇3 (氧化銘）或S i 〇2 (砂石）和 CH3S 1 〇ι.5 (有機矽酸鹽）或A 1 203 (氧化鋁） 和CH3S i Οι. 3 (有機矽酸鹽）作爲主成分之第二高電 阻層4，則可令對於脈衝電流之保護能力更加飛躍地提高 0 以上，雖記述僅以A 1 6 S i 2 0 i 3 (模來石）’ A1PO!(正磷酸鋁），MnFe2〇4(鐵素體）， F e 2 0 3 (氧化鐵）作爲第一高電阻層3之成分例，但於 加入其他T i 〇2 (氧化鈦）之其他提高高電阻層粘合強度 之成分情況，確認亦可藉由令A丨P 0 4 (正磷酸鋁）， MnFesOiC鐵素體），Fe2〇3(氧化鐵）之含量爲 在上述之範圍中1則可實現最佳的脈衝耐量。 <第三實施形態> 其次，敘述第三實施形態。 第三實施形態爲令前述第一及第二實施形態所形成之 第一及第二局電阻層3及4之厚度爲1 0 β m〜1 mm。 此處，製作第一及第二高電阻層3及4之厚度爲不同 之數種之電壓非線性電阻器，並比較第三實施形態之該試 料，與其以外之試料，說明關於第三實施形態之作用效果 〇 首先，形成以AlsS i2〇13 (模來石）作爲主成分 ，且分別含有A 1PO,,(正磷酸鋁），MnFe2〇4( 本紙張尺度適用中困國家標準<CNS)A4規格（210 * 297公釐） ----------- · - ---!訂！--I--^ (锖先閲讀背面之注意事項再填寫本頁> 經濟部智慧財產局貝工消f合作社印製 -26- A7 46 650 7 —---- 五、發明說明（24) 鐵素體）’Fe2〇3(氧化鐵）5wt%之第_高電阻層 3 ’並於其上形成以S i 2 (矽石）和c H 3 s 1〇i 3 (有機矽酸鹽）作爲主成分之非晶質第二高電阻層4。此 時’製作將高電阻層3及4之厚度分別調整至〇 . 1 1 ’ 10 ’ 100 ’ 500"mSl ’ 2mm 之試料，且合 計製作7種試料。 對於如上述製作之各試料，對各試料將8 /2 〇 4 s 波形之脈衝電流以6 0 k A至1 〇 k A等級外加，測定破 壞試料之電流値，並且進行各試料之過電壓保護能力之評 價1。其結果示於圖2。符合第三實施形態之試料，即第 —及二咼電阻層3及4之厚度爲1，1〇，1〇〇， 500#m及lmm之試料，爲經由外加1 9〇kA以上 之脈衝電流而發生破壞。 相對地’不符合第三實施形態之試料，即高電阻層厚 度爲0 · 1 /zm及2mm之試料爲經由外加低至1 〇 〇〜 1 3 0 k A之脈衝電流而發生破壞。其顯示出第一及第二 高電阻層3及4之厚度若過小，則無法取得對於脈衝電流 之優良的保護能力，相反地，第一及第二高電阻層3及4 之厚度若過厚，則隨著此回所增加之厚度而令第一及第二 高電阻層3及4之粘合強度降低，且無法取得對於脈衝電 流之優良的保護能力。 由以上之結果，第三實施形態爲藉由令第一及第二高 電阻層3及4之厚度作成10 〜1mm，則可確保適 切的粘合強度及良好的耐電壓性能兩者，並且可大爲提高 I1III1IIII1 I ·1111111 <— — — —— — —1^ {請先《讀背面之注意事項再填WT本頁) 經濟部智慧財產局貝工消费合作社印製 本紙張尺度適用中困國家標準（CNS)A4规格<210 * 297公釐） -27- Α7 4 6 65 Ο Τ -_______Β7__ 五、發明說明（25) 對於脈衝電流之保護能力。 尙’此處雖說明關於符合上述第二實施形態之電壓非 線性電阻器中應用本實施形態之情況，但關於第一實施形 態之電壓非線性電阻器應用本實施之形態，亦可取得同樣 之效果。 <第四實施形態> 其次，說明關於第四實施形態·> 第四實施形態爲於第一實施形態中，形成第一高電阻 層3之工程中之添加F e 2 0 3 (氧化鐵），作成混合流漿 之混合工程中，使用平均粒徑爲0.01〜l〇#m之 F e 2 0 3 (氧化鐵）。 又，於第二實施形態形成第一高電阻層3之工程中之 添加MnFe2〇4(鐵素體）及Fe2〇3(氧化鐵），作 爲混合流漿之混合工程中，使用平均粒徑爲0 . 0 1〜 1 0#m之MnF e2〇4 (鐵素體）及F e2〇3 (氧化鐵 )。 此處，爲了說明第四實施形態之作用效果，乃製作 MnF e2〇4 (鐵素體）及F e2〇3 (氧化鐵）之平均粒 徑爲不同之數種電壓非線性電阻器。 尙，此處雖說明關於符合上述第二實施形態之電壓非 線性電阻器中應用本實施形態之情況，但關於第一實施形 態之電壓非線性電阻器應用本實施之形態，亦可取得同樣 之效果。 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） - - --- - - - ---* - ----- 11 ^---!ι!·θ (諳先Μ讚背面之沒意事項再填寫本頁) 經濟部智慧財產局員工消t合作社印製 -28- 4 6 65 0 7 A? _______ B7 五、發明說明（26) 於以後之實施形態中，雖說明關於符合第二實施形態 之高電阻層3 ’ 4中含有MnFe2〇-t (鐵素體）之電壓 非線性電阻器之例，但關於符合第一實施形態之電壓非線 性電阻器亦可取得同樣之效果。 首先，與上述第二實施形態同樣地，形成以 A丨sS i 2〇1：3 (模來石）作爲主成分，且分別含有 Α1Ρ〇4(正磷酸鋁）’MnFe2〇4(鐵素體）， F e2〇3 (氧化鐵）5wt%之第一高電阻層3。 於形成此第一高電阻層3時，製作使闬平均粒徑爲 〇-001，0.〇1，0.1，1，1〇及20从111之 MnFe2〇4(鐵素體），Fe2〇3(氧化鐵）之12種 試料。 對於此些各試料，於第一高電阻層3之上，形成以 S i 〇2 (矽石）和CH3S i 〇1.5 (有機矽酸鹽）作爲 主成分之非晶質第二高電阻層4，且作爲評價試料。 對於如上述製作之各試料，將8/2 Ο μ S波形之脈 衝電流以6 0 k Α至1 〇 k Α等級進行外加，並測定破壞 試料時之電流値’進行各試料之過電壓保護能力的評價。 其結果示於圖3。符合第四實施形態之試料，即 Mn F e2〇4 (鐵素體）及F e2〇3 (氧化鐵）之平均粒 徑爲0.01〜l〇ym之試料，爲經由外加igOkA 以上之脈衝電流而發生破壞，但平均粒徑爲上述範圍外之 試料爲經由外加1 0 0〜1 3 0 kA之脈衝電流而發生破 壞。 本紙張尺度適用中國國家標準（CNS>A4規格（210 X 297公;* > <請先闓讀背面之注意事項再填窝本頁> 裝 ----訂---------%. 經濟部智慧財產局員X消t合作社印製 4 6 65 Ο Τ Α7 ___Β7________ — 五、發明說明（27) —般所使用之粉末的平均粒徑愈細則分散性愈差’故 第一高電阻層3之均勻性變差，使用平均粒徑〇 . 0 1 之MnFe2〇.t (鐵素體）及Fe2〇3 (氧化鐵）之 試料’不可能爲對於脈衝電流之保護能力優。 另一方面，所使用之粉末的平均粒徑若粗，則仍易於 高電阻層成分中偏積，故使用平均粒徑2 0 之 MnFesOi (鐵素體）及Fe2〇3 (氧化鐵）之試料亦 不可能對於脈衝電流之保護能力優。 由以上之結果，第四實施形態爲在添加平均粒徑爲 0 · 01〜10/zm範圍之MnFe2〇4 (鐵素體）及 F e 2〇3 (氧化鐵）下，令第一高電阻層3可保持適切的 均勻性，並發揮優良的耐電壓性能，且對於脈衝電流之保 護能力優。 <第五實施形態> 其次說明關於第五實施形態。 經濟部智慈財產局S工消费合作社印製 第五實施形態爲令以第一實施形態形成第一高電阻層 3之情況，於A i ( Η 2 P 0 4 ) 3 (—代磷酸鋁）和 A 1 s S ί 2 0 t 3 (模來石）作爲主成分之流漿中，添加 F e 2 0 3 (氧化鐵）作爲混合流漿之混合工程終了後， 1 0 0小時以內，令塗佈工程及烘烤工程完成。 又，以第二實施形態形成第一高電阻層3之情況，於 A 1 (H2P〇4) 3 (―代磷酸鋁）和 A leS i2〇13 ( 模來石）作爲主成分之流漿中，添加Μη F e 2〇4 (鐵素 -30- 本紙張尺度適用+ «國家櫟準（CNS)A4規格（210 X 297公* > A74 6 65 Ο 7 V. Description of the invention (22) The sample in the first application form has a content of A i Ρ〇Ί (orthophosphate) of 1, 25 wt%, and a content of MnFe204 (ferrite) of 1 , 15wt%, Fe2O3 (iron oxide) content of 0.1 1 1 5wt% of the sample of the first high-resistance layer 3 (sample numbers in Table 1 and Table 2 2 2 '2 7' 3 0, 3 1 4 2, 4 3, 4 6, ^ 7) is caused by the application of a pulse current as high as 170 or more. On the other hand, samples other than those mentioned above are destroyed by applying a low pulse current of 1000 to 130 kA. In addition, in the second embodiment, the content of A—PO 4 (aluminum orthophosphate), MnF e204 (ferrite), and F e 2 0 3 (iron oxide) as the secondary components is formed as the first— 咼 resistive layer The surface of 3 'is formed with S i 〇2 (silica) or A 1 (alumina) or S 1 02 (silica) and ch3S i 〇15 (organic silicate) or A 1 2 03 (alumina ) And ch3S i Oi.s (organic silicate) as the main component of the second high-resistance layer 4 samples (23 ~ 26 '48 ~ 51 in Table 1 and Table 2) are applied through the extremely high 1 9 0 ~ 2 0 0 kA pulse current to cause damage. As clarified by the above results, the second embodiment includes Al6s i203 (mollite) as a main component, and contains A 1 P04 (aluminum orthophosphate) 1.0 to 25 wt%, MnFe2. i (ferrite) 0 1 to 15 wt%, and Fe 2 0 3 (iron oxide) 0 · 1 to 15 wt% of the first high-resistance layer 3 can make the first high-resistance layer 3 in the sintered body 1 Strong adhesion on the side for improved withstand voltage performance. Therefore, we can know that the protection ability of voltage non-linear resistors for pulse current < please read the precautions on the back before filling out this page) -Installation-Order III! Printed on this paper National Standard (CNS) A4 (210 X 297 male *)-25-Α7 Ο 65 0 7 Β7_ V. Description of the invention (23) The force is greatly improved. In addition, by forming si 〇2 (silica) or A 12〇3 (oxide) or Si 〇2 (sandstone) and CH3S 1 〇. 5 (organic silicate) or A 1 203 (alumina ) And CH3S i 〇ι. 3 (organic silicate) as the second high-resistance layer 4 as the main component, the protection ability against pulse current can be further improved by more than 0, although the description only uses A 1 6 S i 2 0 i 3 (mullite) 'A1PO! (Aluminum orthophosphate), MnFe2 04 (ferrite), F e 2 0 3 (iron oxide) as component examples of the first high-resistance layer 3, but other T i 〇2 (titanium oxide) and other components that improve the adhesive strength of the high-resistance layer, confirm that A 丨 P 0 4 (aluminum orthophosphate), MnFesOiC ferrite), Fe2 03 (iron oxide The content of) is 1 in the above range to achieve the best pulse tolerance. < Third embodiment > Next, a third embodiment will be described. In the third embodiment, the thicknesses of the first and second local resistance layers 3 and 4 formed in the first and second embodiments are 10 β m to 1 mm. Here, voltage non-linear resistors having different thicknesses of the first and second high-resistance layers 3 and 4 are produced, and the sample of the third embodiment is compared with other samples, and the third embodiment will be described. Function and effect 〇 First, form AlSS i2〇13 (mollite) as the main component, and contain A 1PO ,, (aluminum orthophosphate), MnFe2 04 (this paper standard applies to national standards & CNS) A4 specifications (210 * 297 mm) ----------- ·----! Order! --I-^ (锖 Please read the notes on the back before filling in this page >> Printed by Bei Gong Xiao F Cooperative of Intellectual Property Bureau, Ministry of Economic Affairs -26- A7 46 650 7 —---- V. Description of Invention (24 ) Ferrite) 'Fe2〇3 (iron oxide) 5wt% of the _high resistance layer 3' and formed thereon Si 2 (silica) and c H 3 s 10i 3 (organic silicate ) An amorphous second high-resistance layer 4 as a main component. At this time, samples were prepared in which the thicknesses of the high-resistance layers 3 and 4 were adjusted to 0.11'10'100'500 " mSl'2mm, and a total of 7 samples were prepared. For each sample produced as described above, a pulse current with a waveform of 8/2 0 4 s is added to each sample at a level of 60 k A to 10 k A, the current 破坏 that destroys the sample is measured, and overvoltage protection of each sample is performed. Evaluation of ability 1. The results are shown in Fig. 2. The sample conforming to the third embodiment, that is, the samples of the first and second resistive layers 3 and 4 having a thickness of 1,10, 100, 500 # m, and 1mm, were subjected to a pulse current of more than 190kA. And destruction happened. In contrast, the sample which does not conform to the third embodiment, that is, the sample with a high resistance layer thickness of 0 · 1 / zm and 2 mm was destroyed by applying a pulse current as low as 1000 to 130 kA. It shows that if the thickness of the first and second high-resistance layers 3 and 4 is too small, excellent protection ability against pulse current cannot be obtained. On the contrary, if the thickness of the first and second high-resistance layers 3 and 4 is too thick As the thickness increases this time, the adhesive strength of the first and second high-resistance layers 3 and 4 decreases, and excellent protection ability against pulse current cannot be obtained. From the above results, in the third embodiment, by making the thicknesses of the first and second high-resistance layers 3 and 4 to 10 to 1 mm, both appropriate bonding strength and good withstand voltage performance can be secured, and the Greatly improve I1III1IIII1 I · 1111111 < — — — — — — — 1 ^ {Please read the “Notes on the back side and then fill out the WT page”) Printed by the Intellectual Property Bureau of the Ministry of Economic Affairs, Shellfish Consumer Cooperatives National Standard (CNS) A4 Specification < 210 * 297 mm) -27- Α7 4 6 65 Ο Τ -_______ Β7__ V. Description of the Invention (25) Protection ability for pulse current.尙 'Although the present embodiment is applied to the voltage nonlinear resistor according to the second embodiment described above, the same applies to the voltage nonlinear resistor of the first embodiment to which this embodiment is applied. effect. < Fourth Embodiment > Next, the fourth embodiment will be described. > The fourth embodiment is the addition of F e 2 0 3 (oxidation) in the process of forming the first high resistance layer 3 in the first embodiment. Iron). In a mixing process for preparing a mixed slurry, Fe 2 0 3 (iron oxide) having an average particle diameter of 0.01 to 10 #m is used. In addition, in the process of forming the first high-resistance layer 3 in the second embodiment, MnFe2O4 (ferrite) and Fe2O3 (iron oxide) are added. In the mixing process as a mixed slurry, the average particle size is MnF e204 (ferrite) and F e203 (iron oxide) of 0.0 1 to 10 #m. Here, in order to explain the effect of the fourth embodiment, several types of voltage non-linear resistors having different average particle diameters of MnF e204 (ferrite) and F e203 (iron oxide) are produced. Alas, although the case where this embodiment is applied to the voltage non-linear resistor in accordance with the second embodiment described above, the same applies to the voltage non-linear resistor of the first embodiment to which this embodiment is applied. effect. This paper size applies to China National Standard (CNS) A4 (210 X 297 mm)---------*------ 11 ^ ---! Ι! · Θ (谙 先Please fill in this page for the unintentional matters on the back of M.) Printed by the staff of the Intellectual Property Bureau of the Ministry of Economic Affairs, printed by the cooperative -28- 4 6 65 0 7 A? _______ B7 V. Description of the invention (26) In the following implementation forms, although An example of a voltage nonlinear resistor containing MnFe20-t (ferrite) in the high-resistance layer 3 ′ 4 according to the second embodiment will be described, but a voltage nonlinear resistor according to the first embodiment can also be obtained The same effect. First, in the same manner as the second embodiment described above, A? SS i 2〇1: 3 (mullite) as a main component is formed, and each contains A1PO4 (aluminum orthophosphate) 'MnFe2O4 (ferrite). ), F e203 (iron oxide) 5wt% of the first high resistance layer 3. When the first high-resistance layer 3 is formed, MnFe2O4 (ferrite) and Fe2O3 are produced so that the average particle size of the hafnium is 0-001, 0.01, 0.1, 1, 10, and 20 from 111 (Iron oxide) 12 kinds of samples. For each of these samples, an amorphous second high-resistance layer 4 having S i 〇2 (silica) and CH3S i 〇1.5 (organic silicate) as main components was formed on the first high-resistance layer 3. And used as an evaluation sample. For each sample produced as described above, a pulse current of 8/2 0 μ S waveform was applied at a level of 60 k Α to 10 k Α, and the current when the sample was destroyed was measured. evaluation of. The results are shown in Fig. 3. The sample conforming to the fourth embodiment, that is, a sample having an average particle diameter of Mn F e204 (ferrite) and F e203 (iron oxide) of 0.01 to 10 μm, is obtained by applying a pulse current of igOkA or more. Damage occurred, but samples with an average particle diameter outside the above-mentioned range were destroyed by applying a pulse current of 100 to 130 kA. This paper size applies to Chinese national standard (CNS > A4 size (210 X 297 male; * > < Please read the precautions on the back before filling in this page)> Binding ------------ ---%. Printed by X Xiaot Cooperative, Member of the Intellectual Property Bureau of the Ministry of Economic Affairs 4 6 65 Ο Τ Α7 ___ Β7 ________ — V. Description of the invention (27) — The average particle size of the powder used in general is worse and the dispersion becomes worse. The uniformity of a high-resistance layer 3 is deteriorated, and samples using MnFe2O.t (ferrite) and Fe2O3 (iron oxide) having an average particle size of 0.01 cannot be excellent in protection ability against pulse current. On the other hand, if the average particle diameter of the powder used is coarse, it is still easy to segregate in the components of the high-resistance layer, so the MnFesOi (ferrite) and Fe203 (iron oxide) with an average particle diameter of 20 are used. It is also impossible for the sample to have excellent protection ability against pulse current. From the above results, the fourth embodiment is to add MnFe2O4 (ferrite) and Fe2 to an average particle size in the range of 0.01 to 10 / zm. 3 (iron oxide), the first high-resistance layer 3 can maintain appropriate uniformity, and exert excellent voltage resistance performance, and Excellent protection ability for pulse current. ≪ Fifth embodiment > Next, the fifth embodiment will be described. The fifth embodiment is printed by the Industrial and Commercial Cooperation Bureau of the Intellectual Property Office of the Ministry of Economic Affairs to make the first embodiment form the first. In the case of the high-resistance layer 3, F e is added to the slurry of A i (Η 2 P 0 4) 3 (—aluminum phosphate) and A 1 s S ί 2 0 t 3 (mollite) as main components. After the end of the mixing process of 203 (iron oxide) as a mixed slurry, the coating process and the baking process are completed within 100 hours. In the case of forming the first high-resistance layer 3 in the second embodiment, To the slurry with A 1 (H2P〇4) 3 (Aluminum Phosphate) and A leS i2013 (Mullite) as the main components, Mn F e 204 (ferrite-30- this paper standard Applicable + «National Oak Standard (CNS) A4 Specification (210 X 297 Male * > A7

於A 4 6 650 7 ______B7________ 五、發明說明（28) 體）及F e 2 〇 3 (氧化鐵）作爲混合流漿之混合工程終了 後，1 0 0小時以內，令塗佈工程及烘烤工程完成。 此處，爲了說明第五實施形態之作用效果，乃製作如 下之試料。 Η 2 P〇，4 ) 3 (—代磷酸鋁）和 A i eS 1 2〇ι3 (模來石）作爲主成分之流漿中，分別添 加MnFe2〇4(鐵素體）及Fe2〇3(氧化鐵）5wt % ’製作經由噴霧塗佈於燒結體1之側面塗佈，進行烘烤 時1於添加MnFe2〇4 (鐵素體）及Fe2〇3 (氧化鐵 )後 1 ，12，24，50，100，120 及 180 小 時後進行塗佈，烘烤之7種試料》 對於此些各試料，於第一高電阻層3之上，形成以 S i 〇2 (矽石）和CH3S i CU.s (有機矽酸鹽）作爲 主成分之非晶質第二高電阻層4，且作爲評價試料。 對於如上述製作之各試料，將8/2 0 a S波形之脈 衝電流以6 0 kA至1 0 kA等級進行外加，並測定破壞 試料時之電流値，進行各試料之過電壓保護能力的評價。 其結果示於圖4。符合第五實施形態之試料，即於流 漿中將MnF e2〇4 (鐵素體）及F e2〇3 (氧化鐵）添 加後，1 0 0小時以內進行塗佈，烘烤之試料爲經由外加 1 8 〇 k A以上之脈衝電流而發生破壞。 相對地，於流漿中將Μ n F e 2 0 4 (鐵素體）及 F e 2 〇 3 (氧化鐵）添加後，經過1 2 0及1 8 0小時後 進行塗佈’烘烤之試料爲經由外加1 〇 〇〜1 3 0 kA之 ------- - λ I · I I I I — I I — — — — ^ (請先M讀背面之注意事項再填寫本荑》 經濟部智慧財產局β工消t合作社印製 6 6 5 0 7 A7 B7 五、發明說明（29) 脈衝電流而發生破壞。此類破壞電流値小之理由認爲如下 〇 於A 1 ( Η 2 P 0 1 3 (—代磷酸鋁）中若添加After the mixing project of A 4 6 650 7 ______B7________ V. Description of the invention (28) body and Fe 2 03 (iron oxide) as the mixed slurry is finished, within 100 hours, the coating process and baking process will be completed. carry out. Here, in order to explain the effect of the fifth embodiment, the following samples are prepared.流 2 P0,4) 3 (—aluminum phosphate) and A i eS 1 2〇3 (mollite) as the main component of the slurry, MnFe2O4 (ferrite) and Fe2O3 ( Iron oxide) 5wt% 'produced by spray coating on the side of the sintered body 1, when baking 1 after adding MnFe204 (ferrite) and Fe203 (iron oxide) 1, 12, 24, Seven samples to be coated and baked after 50, 100, 120 and 180 hours "For each of these samples, S i 〇2 (silica) and CH3S i CU were formed on the first high resistance layer 3. .s (organic silicate) is the amorphous second high-resistance layer 4 as a main component, and is used as an evaluation sample. For each sample produced as described above, a pulse current of 8/2 0 a S waveform was applied at a level of 60 kA to 10 kA, and the current 破坏 when the sample was broken was measured to evaluate the overvoltage protection capability of each sample. . The results are shown in Fig. 4. The sample conforming to the fifth embodiment is that after adding MnF e204 (ferrite) and F e203 (iron oxide) to the slurry, coating is performed within 100 hours, and the baking sample is passed through Destruction occurs by applying a pulse current of more than 180 k A. In contrast, after adding M n F e 2 0 4 (ferrite) and F e 2 0 3 (iron oxide) in the slurry, coating was performed after 120 hours and 180 hours. The sample is obtained through the addition of 100-130 kA --------λ I · IIII — II — — — — ^ (Please read the notes on the back before filling in this book. ”Intellectual Property of the Ministry of Economic Affairs Printed by the Bureau β Industrial Consumer Cooperative Society 6 6 5 0 7 A7 B7 V. Description of the Invention (29) Pulse current causes damage. The reason for such a small damage current is considered as follows: 0 A 1 (Η 2 P 0 1 3 (—Aluminium Phosphate) If added

MnF e2〇4 (鐵素體）及F e2〇3 (氧化鐵），則所添 加的MnF e^O.!(鐵素體）及F e2〇3 (氧化鐵）爲慢 慢溶解，並妨礙A 1 (H2PO1) 3 (―代磷酸鋁）的正 常硬化反應。 因此，第一高電阻層3的粘合強度依序減低，即使於 添加經過1 2 0及1 8 0小時後進行塗佈，烘烤，亦難令 第一高電阻層3粘合至燒結體1之側面|使得耐電壓性能 降低且對於脈衝電流的保護能力不佳。 由以上之結果，第五實施形態爲在添加Mn F e 2〇4 (鐵素體）及F e 2 0 3 (氧化鐵）後1 0 0小時以內進行 塗佈，烘烤，可令第一高電阻層3的粘合強度不降低地於 燒結體1之側面形成。藉此，第五實施形態之電壓非線性 電阻器爲對於脈衝電流之保護能力優。 <第六實施形態> 其次說明關於第六實施形態。 第六實施形態爲令第一實施形態形成第一高電阻層3 之情況，將A 1 (H2PO4) 3 (―代磷酸鋁）和 A丨0S i 2〇13 (模來石）作爲主成分之流漿中，添加混 合F e 2 0 3 (氧化鐵）之混合流漿予以塗佈後，進行烘烤 時之烘烤最高溫度爲2 0 0°C〜8 0 0°C ° 本&張尺度適用中國國家摞準（CNsjA4規格（210 X 297公Si ί -32 - (請先《讀背面之注意事項再填寫本頁)MnF e204 (ferrite) and F e203 (iron oxide), the added MnF e ^ O.! (Ferrite) and F e203 (iron oxide) are slowly dissolved and hinder A 1 (H2PO1) 3 (―Aluminum Phosphate) Normal hardening reaction. Therefore, the adhesive strength of the first high-resistance layer 3 is sequentially reduced. Even if coating and baking are performed after the addition of 120 and 180 hours, it is difficult to make the first high-resistance layer 3 adhere to the sintered body. 1 side | makes the withstand voltage performance reduced and the protection ability against pulse current is not good. From the above results, in the fifth embodiment, the coating is performed within 100 hours after adding Mn F e 204 (ferrite) and F e 2 03 (iron oxide), and baking can make the first The high-resistance layer 3 is formed on the side of the sintered body 1 without lowering the adhesive strength. Accordingly, the voltage non-linear resistor of the fifth embodiment is excellent in protection ability against pulse current. < Sixth Embodiment > Next, a sixth embodiment will be described. The sixth embodiment is the case where the first high-resistance layer 3 is formed in the first embodiment, and A 1 (H2PO4) 3 (“aluminum phosphate”) and A 丨 0 2i (mollite) are used as the main components. In the slurry, after mixing and mixing the mixed slurry of Fe 2 0 3 (iron oxide), the maximum baking temperature during baking is 200 ° C ~ 80 0 ° C ° Ben & Zhang Dimensions are applicable to China National Standards (CNsjA4 specifications (210 X 297 male Si ί -32-(Please read the precautions on the back before filling this page)

1 1 1· ϋ 一0，« I |> ϋ n n I I 經濟部智慧財產局負工消t合作社印製 5 65 0 7 A7 ___B7___ 五、發明說明（30) 又’令第二實施形態形成第一高電阻層3之情況，將 A i ( Η 2 P 0 ‘1 ) 3 (—代磷酸鋁）和 a 1 s S i 2 〇 i 3 ( 模來石）作爲主成分之流漿中，添加混合 Μ n F e 2 0 (鐵素體）及f e 2〇3 (氧化鐵）之混合流 漿予以塗佈後，進行烘烤時之烘烤最高溫度爲2 0 0 °C〜 8 0 0 °C。 此處，爲了說明第六實施形態之作用效果，製作如下 之試料。 於A 1 (H2P〇4) 3 (―代磷酸鋁）和 A I 6S i 2〇13 (模來石）作爲主成分之流漿中，分別添 加5wt%之MnFe2〇4 (鐵素體）及Fe2〇s (氧化 鐵），且以噴霧塗佈於燒結體1之側面進行塗佈，烘烤時 ，令烘烤之最高溫度爲以150，200，400， 600，800及1000 °C進行烘烤，製作5種試料。 對於此些各試料，於第一高電阻層3之上，形成以 S i 〇2 (矽石）和CH3S i 0!.5 (有機矽酸鹽）作爲 主成分之非晶質第二高電阻層4 >且作爲評價試料。 對於如上述製作之各試料，將8/2 0〆S波形之脈 衝電流以6 0 kA至1 0 kA等級進行外加，並測定破壞 試料時之電流値 > 進行各試料之過電壓保護能力的評價。 其結果示於圖5。符合第六實施形態之試料’即第一 高電阻層3之供烤最高溫度以2 0 0〜8 0 〇°C之範圍進 行烘烤之試料，爲經由外加1 9 0 k A以上之脈衝電流而 發生破壞。 \ 請 先 K 婧 背 面 之 注 意 項 |裝 頁I r I I I I I I 訂1 1 1 ϋ ϋ 0, «I | > ϋ nn II Printed by the Consumers’ Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 5 65 0 7 A7 ___B7___ V. Description of the invention (30) Also 'make the second embodiment form the first In the case of a high-resistance layer 3, A i (Η 2 P 0 '1) 3 (—aluminum phosphate) and a 1 s S i 2 〇i 3 (mullite) are used as main components in the slurry, and added After coating the mixed slurry of M n F e 2 0 (ferrite) and fe 2 03 (iron oxide), the maximum baking temperature during baking is 2 0 ° C ~ 8 0 0 ° C. Here, in order to explain the effect of the sixth embodiment, the following samples were prepared. To the slurry with A 1 (H2P〇4) 3 (aluminum phosphate) and AI 6S i 2013 (mollite) as the main components, 5wt% of MnFe2O4 (ferrite) and Fe2 were added, respectively. 〇s (iron oxide), and spray-coated on the side of the sintered body 1 for baking. During baking, the maximum baking temperature is 150, 200, 400, 600, 800, and 1000 ° C. , Make 5 kinds of samples. For each of these samples, on the first high-resistance layer 3, an amorphous second high-resistance having Si 〇2 (silica) and CH3S i 0! .5 (organic silicate) as main components was formed. Layer 4 was used as an evaluation sample. For each sample produced as described above, an 8/2 0〆S waveform pulse current was applied at a level of 60 kA to 10 kA, and the current when the sample was destroyed was measured. ≫ The overvoltage protection capability of each sample was measured. Evaluation. The results are shown in Fig. 5. The sample according to the sixth embodiment, that is, the sample for baking at the highest temperature of the first high-resistance layer 3 for baking in the range of 2000 to 800 ° C, is a pulse current of more than 190 kA. And destruction happened. \ Please pay attention to the note on the back of Jing Jing first | Install the page I r I I I I I I Order

I 經濟部智慧財產局BK工消f合作社印製 本紙張尺度適用t B國家標準（CNS)A4慧格（210 * 297公* ) -33- 經濟部智慧財產局員工消t合作社印製 4 6 65 Ο Τ Α7 _____Β7__ 五、發明說明（31) 相對地’以1 5 0 °C及1 Ο Ο 0 t進行烘烤之試料， 爲經由外加1 〇 〇〜1 1 〇 kA之脈衝電流而發生破壞。 破壞電流値如此小之理由認爲如下。 以未滿2 0 0 °C之烘烤溫度下，因未引起 A 1 ( Η 2 P 0 4 ) 3 (—代磷酸鋁）的硬化反應，故並未 形成以A 1 sS i 2〇13 (模來石）作爲主成分，且含有 Α1Ρ〇4(正磷酸鋁）-MnFezOiC鐵素體）， Fe2〇3 (氧化鐵）之第一高電阻層3，故對於燒結體1 側面之粘合程度差，耐電壓降低並且對於脈衝電流的保護 能力不佳。 又，以高於8 0 0 °C之烘烤溫度下*因未引起 A 1 (Η2Ρ04) 3 (—代磷酸鋁）的正常硬化反應，故 未形成以A 1 6S i 2〇13 (模來石）作爲主成分，且含有 A 1 P〇4 (正磷酸鋁），MnFe2〇4 (鐵素體）， Fe2〇3 (氧化鐵）之第一高電阻層3。因此，對於燒結 體1側面的粘合程度差，耐電壓降低並且對於脈衝電流的 保護能力不佳。 由以上之結果，第六實施形態爲令第一高電阻層3以 最高烘烤溫度2 0 0〜8 0 0°C進行烘烤，使得第一高電 阻層3爲以粘合強度最高之狀態於燒結體1側面形成。藉 此，令第六實施形態之電壓非線性電阻器爲對於脈衝電流 之保護能力優。 <第七實施形態> — — — — — — —— — — — 1111 ! I 訂-i I ί—-^ (锖先閱讀背面之沒項再填寫本頁) 本纸張尺度適用令國國家標準（CNS>A4蚬格（210 X 297公釐） -34- 經濟部智慧財產局負工消f合作杜印製 46 650 T a? -----— B7 五、發明說明（32) 其次說明關於第七實施形態。 第七實施形態爲令第一實施形態形成第一高電阻層3 之情況，將A1 (H2P〇4) 3 ( —代磷酸鋁）和 A L 6 S i 2 0 i 3 (模來石）作爲主成分之流漿中，添加混 合F e 2 0 3 (氧化鐵）之混合流漿予以塗佈後，進行烘烤 時至少令1 0 0°C〜最高溫度爲止之升溫速度以1 〇t/ h r s 〜300 °C/h r s 下進行。 又*令第二實施形態形成第—高電阻層3之情況，將 A1 (H2P〇4)3( —代磷酸鋁）和Al6Si2〇13( 模來石）作爲主成分之流漿中，添加混合F e 2 0 3 (氧化 鐵）之混合流漿予以塗佈後，進行烘烤時至少令1 〇 〇 r 〜最高溫度爲止之升溫速度以1 Ot/h r S〜3 0 0 °C / h r s下進行。 此處’爲了說明第七實施形態之作用效果，製作如下 之試料。 於A 1 ( Η 2 P 0 4 ) 3 (—代磷酸鋁）和 A i 6 S i 2 0 i 3 (模來石）作爲主成分之流漿中，分別添 加5wt%之MnFe2〇4 (鐵素體）及Fe2〇3 (氧化 鐵）’且以噴霧塗佈於燒結體1之側面進行塗佈，烘烤時 ，令烘烤之升溫速度爲以5，10，100，200， 300及400 °C / hr s進行烘烤，製作6種試料。 對於此些各試料，於第一高電阻層3之上，形成以 S 1 〇2 (矽石）和CHsS i 〇15 (有機矽酸鹽）作爲 主成分之非晶質第二高電阻層4|且作爲評價試料。 本纸張尺度適用1*國a家標準（CNS>A4規格（210 X 297公釐） -35- — — — — — — — — — — — — I — I ! ftr,! — — !·ίέί <锖先閱讚背面之注$項再填寫本頁) 46 650 7 A7 ------ B7 五、發明說明（叫 對於如上述製作之各試料，將8/2 0 A S波形之脈 衝電流以6 0 k A至1 〇 k A等級進行外加，並測定破壞 試料時之電流値，進行各試料之過電壓保護能力的評價。 其結果示於圖6 =符合第七實施形態之試料，即第一 高電阻層3之烘烤升溫速度以1 〇〜3 0 Ot： / h r之範 圍進行烘烤之試料，爲經由外加1 9 0 kA以上之脈衝電 流而發生破壞。 相對地’以5°C/h r s及400°C/h r s進行烘 烤之試料，爲經由外加1 〇 〇〜1 3 0 kA之脈衝電流而 發生破壞。破壞電流値如此小之理由認爲如下。 以1 0〜3 0 〇aC/h r S之升溫速度將第一高電阻 層3烘烤，則可賦與最適的A 1 (H2PO4) 3 ( —代磷 酸鋁）硬化反應速度，且對於燒結體1側面的粘合度極高 ’且耐電壓提高並且對於脈衝電流之保護能力優。 相對地，升溫速度若高於3 0 0 °C / h r s，則 A 1 (H2P〇4) 3 ( —代磷酸鋁）之硬化反應急速進行 ，使得對於燒結體1側面的粘合度降低。 又’以未滿1 Ot/h r s之烘烤升溫速度下，則令 A 1 ( Η 2 P 0 4 ) 3 ( —代磷酸鋁）的硬化反應慢慢進行 ’故未完全形成以A 1 sS i 2〇ΐ3 (模來石）作爲主成分 ，且含有A 1 Ρ〇4 (正磷酸鋁），MnF eaO,(鐵素 體），Fe2〇3(氧化鐵）之第一高電阻層3。因此，對 於燒結體1側面的粘合程度差，耐電壓降低並且對於脈衝 電流的保護能力降低。 ί锖先Η讀背面之注意事項再填寫本頁) -----訂----I II ! ^ 經濟部智慧財產局興工消費合作杜印製 本紙張尺度適用中國困家櫟準（CNS>A4規格<210 X 297公* ) -36- A7 B7 4 6 65 0 五、發明說明（34) 由以上之結果，第七實施形態爲令第一高電阻層3以 升溫速度1 0〜3 0 0 °C / h r s進行烘烤，使得第一高 電阻層3爲以粘合強度最高之狀態於燒結體1側面形成。 藉此，令第七實施形態之電壓非線性電阻器爲對於脈衝電 流之保護能力優。 <第八實施形態> 其次說明關於第八實施形態。 第八實施形態爲於A 1 s S i 2 0 : 3 (模來石）作爲主 成分，且分別含有5wt%AlP〇4(正磷酸鋁）， MnFe2〇4(鐵素體）氧化鐵）之第一高 電阻層3上，將Si〇2(矽石），SiOCH3(烷氧基 矽烷），異丙醇，正丁醇，聚矽氧烷系界面活性劑及醋酸 作爲成分之水溶液塗佈並進行烘烤，形成以S i 02 (矽石 )和CH3S i 〇15 (有機矽酸鹽）作爲主成分之第二高 電阻層4時，令第二高電阻層4之烘烤最高溫度以5 0〜 800 °C之範圍進行。 又，於A 16S i2〇13 (模來石）作爲主成分，且分 別含有5wt%A 1 P〇4 (正磷酸鋁），Fe2〇3 (氧 化鐵）之第一高電阻層3上，將Si 〇2(矽石）. SiOCH3 (烷氧基矽烷），異丙醇，正丁醇，聚矽氧烷 系界面活性劑及醋酸作爲成分之水溶液塗佈並進行烘烤， 形成以S i 〇2 (矽石）和CH3S i 〇15 (有機矽酸鹽 )作爲主成分之第二高電阻層4時，令第二高電阻層4之 --- --— II '^i 通 1!^· — —· — — — ! (靖先閱讀背面之注意事項再填寫本頁) 經濟部暫慧財產局員工消费合作社印製 本紙張尺度遍用中困國家標準（CNS>A4規格（210 χ 297公釐〉 · 37 - Λ 6 65 0 7 Α7 Β7 五、發明說明（35) 烘烤最高溫度以.5 0〜8 0 0。(：之範圍進行° 此處，爲了說明第八實施形態之作用效果’製作如下 (請先Μ讀背面之注意事項再填寫本頁) 之試料。 於第一高電阻層3上，將S 1 〇2 (矽石）和 S i 0CH3 (烷氧基矽烷），異丙醇，正丁醇，聚矽氧院 系界面活性劑及醋酸作爲成分之溶液予以塗佈並且進行烘 烤時，令烘烤時之最高溫度爲以30，50 ’ 100， 300，600，800，1000 進行烘烤，製作 7 種試料。 對於如上述製作之各試料，將8/2 0 y S波形之脈 衝電流以6 0 k A至1 0 k A等級進行外加’並測定破壞 試料時之電流値，進行各試料之過電壓保護能力的評價》 其結果示於圖7。符合第八實施形態之試料，第二高 電阻層4之烘烤最高溫度以5 0〜8 0 0 °C之範圍進行烘 烤之試料，爲經由外加1 9 0 k A以上之脈衝電流而發生 破壞。 經濟部智慧財產局資工消费合作社印製 相對地，以3 Ot：及1 0 0 〇°C進行烘烤之試料，爲 經由外加1 0 0〜1 1 0 kA之脈衝電流而發生破壞。破 壞電流値如此小之理由認爲如下。 以未滿5 0°C之烘烤溫度下，因未引起異丙醇，正丁 醇之蒸發，故並未形成以S i 〇2 (矽石）和 CH3S10^.5(有機矽酸鹽）作爲主成分之第二高電阻 層4，無法取得良好的耐電壓性能，且未取得對於脈衝電 流之保護能力優之物質。 -38- 本紙張尺度適用令國國家標準（CNS)A4規格（210 X 297公* > A7 466507 B7_ 五、發明說明（36) 又，以超過8 0 0°c之烘烤溫度下，因急速地產生異 丙醇，正丁醇之蒸發，故並未令s i 〇2 (矽石）和 CHS i Oi. 5 (有機矽酸鹽）作爲主成分之第二高電阻 層4以正常狀態下形成，故無法取得良好的耐電壓性能， 且未取得對於脈衝電流之保護能力優之物質。 由以上之結果，第八實施形態爲令第二高電阻層4以 最高溫度5 0〜8 0 0 °C進行烘烤，使得具有良好耐電壓 性能之第二高電阻層4可於施以第一高電阻層3之燒結體 1側面形成。藉此，令第八實施形態之電壓非線性電阻器 對於脈衝電流之保護能力優。 以上，雖以限定第二高電阻層4之烘烤溫度之實施例 ，記述爲形成S 1 〇2 (矽石）和CHS 1 0^.3 (有機砂 酸鹽）作爲主成分之第二尚電阻層4情況之代表例，但即 使於形成以S 1 〇2 (矽石）或A 12〇3 (氧化鋁）或 A 1 2〇3 (氧化鋁）和CHS i Ot.s (有機矽酸鹽）作 爲主成分之第二高電阻層4之情況，亦可確認於上述之烘 烤溫度範圍中，可實現最佳的脈衝耐量。 <第九實施形態> 其次說明關於第九實施形態。 第九實施形態爲於A 1 s S i 2 0 i 3 (模來石）作爲主 成分，且分別含有5wt%AIP〇4(正磷酸鋁）， 鐵素體），Fe2〇3(氧化鐵）之第一高 電阻層3上，將Si〇2 (矽石）’SiOCH3(烷氧基 本紙張尺度適用中a a家標準（CNS)A4規格（210 X 297公« ) <锖先閱讀背面之注意事項再填寫本頁> 裝 I I I I « — — — III— — ^ 經濟部智慧財產局貝工消费合作社印製 39- A7 A 6 65 Ο 7 _________B7_ 五、發明說明（37) 矽烷）•異丙醇，正丁醇，聚矽氧烷系界面活性劑及醋酸 作爲成分之水溶液塗佈並進行烘烤，形成以s i 0 2 (矽石 )和CHsS丨0!.5 (有機矽酸鹽）作爲主成分之第二高 電阻層4時1令第二高電阻層4之烘烤時之至少3 0°C〜 最高溫度之升溫速度以1 0〜3 0 Ot/h r s範圍進行 〇 又1於A 1 eS i 2〇i3 (模來石）作爲主成分，且分 別含有5wt%A 1 PO:1 (正磷酸鋁），Fe2〇3 (氧 化鐵）之第一高電阻層3上，將S i 〇2 (矽石）.， SiOCHaf烷氧基矽烷），異丙醇，正丁醇，聚矽氧烷 系界面活性劑及醋酸作爲成分之水溶液塗佈並進行烘烤， 形成以S i 〇2 (矽石）和CH3S 1 Oi.s (有機矽酸鹽 )作爲主成分之第二高電阻層4時，令第二高電阻層4之 烘烤時之至少3 0 °C〜最高溫度之升溫速度以1 0〜 300 °C/hrs範圍進行。 此處，爲了說明第九實施形態之作用效果，製作如下 之試料。 於第一高電阻層3上，將S i〇2 (矽石）和 SiOCH3 (烷氧基矽烷），異丙醇，正丁醇，聚矽氧烷 系界面活性劑及醋酸作爲成分之溶液予以塗佈並且進行烘 烤時，令烘烤時之最高溫度爲4 0 0°C ·且烘烤時之升溫 速度爲以 5，10 100，200，300 及 400 °C /h r s進行烘烤，製作6種試料。 對於如上述製作之各試料.+，將8/2 0 μ S波.雙之脈 (諝先《讀背面之注意事項再填寫本頁) • I I I 訂·!- 經濟部智慧財產局員工消费合作社印製 本紙張尺度適用中8國家標準（CNS>A4规格（210 X 297公釐〉 -40 A7 466507 B7_ 五、發明說明（38) 衝電流以6 0 k A至1 〇 k A等級進行外加，並測定破壞 試料時之電流値：進行各試料之過電壓保護能力的評價。 <請先鬩讀背面之^意事項再填寫本頁> 其結果示於圖8。符合第九實施形態之試料，第二高 電阻層4之烘烤最高溫度以1 0〜3 0 0 °C/h r s之範 圍進行烘烤之試料，爲經由外加1 9 0 k A以上之脈衝電 流而發生破壞。 相對地，以5°C/hr s及400°C/hr s進行烘 烤之試料，爲經由外加1 0 0〜1 3 0 k A之脈衝電流而 發生破壞。破壞電流値如此小之理由認爲如下。 以未滿1 0 °C / h r s之升溫速度下，因反應爲緩慢 進行，故並未完全形成以S i 0 2 (矽石）和 CH3S i Oi.5 (有機矽酸鹽）作爲主成分之第二高電阻 層4，無法取得良好的耐電壓性能，且對於脈衝電流之保 護能力降低。 經濟部智慧財產局員工消费合作杜印數 又，以超過300 °C / hr s之烘烤速度下，因急速 地產生異丙醇，正丁醇之蒸發，故並未令S i 〇2 (矽石） 和CH3S i 0^.5 (有機矽酸鹽）作爲主成分之第二高電 阻層4以正常狀態下形成，故無法取得良好的耐電壓性能 ，且對於脈衝電流之保護能力降低》 由以上之結果，第九實施形態爲令第二高電阻層4以 最高溫度10〜300 °C / hr s進行烘烤，使得具有良 好耐電壓性能之第二高電阻層4可於施以第一高電阻層3 之燒結體1側面形成》藉此，令第九實施形態之電壓非線 性電阻器對於脈衝電流之保護能力優。 本紙張尺度適用中Bffl家楳準<CNS)A4规格（210x297公* > -41 - 4 6 65 0 7 A7 __B7_____ 五、發明說明（39) (锖先《讀背6之注意事項再填寫本頁} 以上，雖以限定第二高電阻層4之烘烤溫度之實施例 ，記述爲形成S i 〇2 (砍石）和CH：sS i 〇ι.3 (有機 矽酸鹽）作爲主成分之第二高電阻層4情況之代表例，但 即使於形成以S 1 〇2 (矽石）或A 1 2〇3 (氧化鋁）或 A 1 2〇3 (氧化鋁）和CH3S i Oi.5 (有機矽酸鹽） 作爲主成分之第二高電阻層4之情況1亦可確認於上述之 烘烤溫度範圍中，可實現最佳的脈衝耐量。 若根據本發明之第一實施形態，令燒結體1側面所形 成之第一高電阻層3爲以A leS i 2〇i3 (模來石）作爲 主成分，且含有A1 PCU (正磷酸鋁）1 . 〇〜25wt %，F e2〇3 (氧化鐵）0 · 1〜1 5wt%之成分構成 ，則可提高耐濕特性。 又，若根據本發明之第二實施形態至第九實施形態， 令燒結體1側面所形成之第一高電阻層3爲以 A丨6S i 2〇13 (模來石）作爲主成分，且含有 A1 P〇4 (正磷酸鋁）1 . 0 〜25wt%，I Printed by BK Industrial Consumers Bureau of Intellectual Property Bureau of the Ministry of Economic Affairs f Cooperative Standards Applicable t B National Standard (CNS) A4 Huige (210 * 297 public *) -33- Printed by Employees of the Intellectual Property Bureau of the Ministry of Economic Affairs t 6 65 Ο Τ Α7 _____ Β7__ 5. Description of the invention (31) Relatively 'baking samples at 150 ° C and 1 〇 〇 0 t, the damage is caused by the addition of a pulse current of 1 00 ~ 1 1 0 kA . The reason why the destruction current is so small is considered as follows. At a baking temperature of less than 200 ° C, no hardening reaction of A 1 (Η 2 P 0 4) 3 (—aluminum phosphate) was caused, so A 1 sS i 2〇13 ( Mullite) as the main component, and contains A1PO4 (aluminum orthophosphate) -MnFezOiC ferrite), the first high-resistance layer 3 of Fe203 (iron oxide), so the degree of adhesion to the side of the sintered body 1 Poor, reduced withstand voltage and poor protection against pulsed current. In addition, at a baking temperature higher than 8 0 ° C *, since the normal hardening reaction of A 1 (Ρ2Ρ04) 3 (—aluminum phosphate) is not caused, no A 1 6S i 2〇13 (die to As the main component, the first high-resistance layer 3 containing A 1 Po 4 (aluminum orthophosphate), MnFe 2 0 4 (ferrite), and Fe 2 0 3 (iron oxide). Therefore, the degree of adhesion to the side of the sintered body 1 is poor, the withstand voltage is reduced, and the protection ability against pulse currents is not good. From the above results, in the sixth embodiment, the first high-resistance layer 3 is baked at a maximum baking temperature of 2000 to 800 ° C, so that the first high-resistance layer 3 is in a state with the highest adhesive strength. It is formed on the side of the sintered body 1. Therefore, the voltage nonlinear resistor of the sixth embodiment is excellent in protection ability against pulse current. < Seventh embodiment > — — — — — — — — — — 1111! I order -i I ί —- ^ (锖 Please read all the items on the back before filling in this page) The paper size is applicable to the ordering country National Standard (CNS > A4 Grid (210 X 297 mm) -34- Duplicate work of the Intellectual Property Bureau of the Ministry of Economic Affairs, cooperation printing 46 650 T a? ------ B7 V. Description of the invention (32) Next, the seventh embodiment will be described. In the seventh embodiment, in the case where the first high-resistance layer 3 is formed in the first embodiment, A1 (H2P〇4) 3 (aluminum phosphate) and AL 6 S i 2 0 i 3 (moldstone) as the main component, after adding the mixed slurry of Fe 2 0 3 (iron oxide) and coating it, the baking temperature should be at least 100 ° C to the maximum temperature. The temperature increase rate is performed at 10 t / hrs to 300 ° C / hrs. When the second embodiment forms the first high-resistance layer 3, A1 (H2P〇4) 3 (aluminum phosphate) and Al6Si2 are used. 〇13 (mollite) as the main component, after adding the mixed slurry mixed with Fe 2 0 3 (iron oxide) and coating, the baking should be performed at least 100 ～ The heating rate up to a high temperature is performed at 1 Ot / hr S to 300 ° C / hrs. Here, in order to explain the function and effect of the seventh embodiment, the following samples are prepared. A 1 (Η 2 P 0 4 ) 3 (—Aluminium Phosphate) and A i 6 S i 2 0 i 3 (Mullite) as the main components, 5 wt% of MnFe2O4 (ferrite) and Fe2O3 (oxidized) (Iron) 'and spray-coated on the side of the sintered body 1 for coating. During baking, the heating rate of the baking is set at 5, 10, 100, 200, 300 and 400 ° C / hr s. Six kinds of samples were prepared. For each of these samples, on the first high-resistance layer 3, an amorphous element having S 1 02 (silica) and CHsS i 〇15 (organic silicate) as main components was formed. The second high resistance layer 4 | is also used as an evaluation sample. This paper size is applicable to 1 * national standard (CNS > A4 specification (210 X 297 mm) -35- — — — — — — — — — — — — I — I! Ftr ,! — —! · Ίέί < 锖 Read the note on the back of the like before filling in this page) 46 650 7 A7 ------ B7 V. Description of the invention Sample The pulse 8/2 0 A S overshoot current waveforms to 6 0 k A k A to 1 billion level is applied, and when the measured current Zhi sample damage was evaluated overvoltage protection capability of each sample. The results are shown in FIG. 6 = the sample conforming to the seventh embodiment, that is, the sample for baking at the heating rate of the first high-resistance layer 3 in a range of 10 to 30 Ot: / hr, which was added by adding 19 Destruction occurs with a pulse current of 0 kA or more. In contrast, the samples which were baked at 5 ° C / h r s and 400 ° C / h r s were destroyed by applying a pulse current of 100 to 130 kA. The reason why the destruction current is so small is considered as follows. Baking the first high-resistance layer 3 at a heating rate of 10 to 3 〇aC / hr S can give an optimal hardening reaction speed of A 1 (H2PO4) 3 (—aluminum phosphate), and for sintered bodies 1 The adhesion on the side is extremely high, and the withstand voltage is improved, and the protection ability against pulse current is excellent. On the other hand, if the heating rate is higher than 300 ° C / h r s, the hardening reaction of A 1 (H2P04) 3 (—aluminum phosphate) proceeds rapidly, and the degree of adhesion to the side of the sintered body 1 decreases. At a temperature of less than 1 Ot / hrs, the hardening reaction of A 1 (Η 2 P 0 4) 3 (—aluminum phosphate) is allowed to proceed slowly, so it is not completely formed with A 1 sS i 20.03 (mullite) is the first high-resistance layer 3 containing A1 Po4 (aluminum orthophosphate), MnF eaO, (ferrite), and Fe203 (iron oxide) as a main component. Therefore, the degree of adhesion to the side of the sintered body 1 is poor, the withstand voltage is reduced, and the protection ability against pulse currents is reduced. (Please read the precautions on the reverse side before filling out this page) ----- Order ---- I II! ^ The Ministry of Economic Affairs, Intellectual Property Bureau, Industrial and Consumer Cooperation, printed paper standards are applicable to China's impoverished oak (CNS & gt A4 specifications < 210 X 297 male *) -36- A7 B7 4 6 65 0 V. Description of the invention (34) From the above results, the seventh embodiment is to make the first high-resistance layer 3 at a heating rate of 1 0 ~ Baking is performed at 300 ° C / hrs, so that the first high-resistance layer 3 is formed on the side of the sintered body 1 in the state with the highest adhesive strength. Thereby, the voltage non-linear resistor of the seventh embodiment is excellent in protection ability against pulse current. < Eighth embodiment > Next, an eighth embodiment will be described. The eighth embodiment is based on A 1 s S i 2 0: 3 (mullite) as the main component, and contains 5 wt% AlP04 (aluminum orthophosphate), MnFe205 (ferrite), iron oxide). On the first high-resistance layer 3, an aqueous solution of SiO2 (silica), SiOCH3 (alkoxysilane), isopropanol, n-butanol, polysiloxane surfactant, and acetic acid as components is coated and When baking is performed to form the second high-resistance layer 4 having Si 02 (silica) and CH3S i 〇15 (organic silicate) as main components, the maximum baking temperature of the second high-resistance layer 4 is set to 5 0 to 800 ° C. In addition, on the first high-resistance layer 3 containing A 16S i2O13 (mollite) as the main component and containing 5 wt% A 1 P04 (aluminum orthophosphate) and Fe2 03 (iron oxide), respectively, Si 〇2 (silica). SiOCH3 (alkoxy silane), isopropanol, n-butanol, polysiloxane surfactant and acetic acid as components of the aqueous solution is coated and baked to form S i 〇 2 (silica) and CH3S i 〇15 (organic silicate) as the second high-resistance layer 4 as the main component, make the second high-resistance layer 4 --- --- II '^ i 通 1! ^ · — — · — — —! (Jing first read the notes on the back and then fill out this page) Printed by the Ministry of Economic Affairs, temporary consumer property bureau, Consumer Cooperatives, this paper is a national standard (CNS > A4 specification (210 χ 297) Mm> · 37-Λ 6 65 0 7 Α7 Β7 V. Description of the invention (35) The maximum baking temperature is .5 0 ~ 80 0 0. (: The range is performed ° Here, in order to explain the effect of the eighth embodiment The effect is made as follows (please read the precautions on the back before filling in this page). On the first high resistance layer 3, mix S 1 〇2 (silica) and S i 0CH3 (alkoxyl Alkane), isopropanol, n-butanol, polysiloxane surfactant and acetic acid as ingredients and apply the solution when baking and baking, so that the maximum temperature during baking is 30, 50 '100, 300 Bake at 600, 800, 1000 to make 7 kinds of samples. For each sample made as described above, the pulse current of the 8/2 0 y S waveform is applied at a level of 60 k A to 10 k A 'and measured. The current 値 at the time of breaking the sample was evaluated for the overvoltage protection capability of each sample. The results are shown in Fig. 7. According to the sample of the eighth embodiment, the maximum baking temperature of the second high-resistance layer 4 was 50 to 80. The baking sample in the range of 0 ° C is damaged by the addition of a pulse current of more than 190 k A. The printed information is printed by the capital, industrial and consumer cooperatives of the Intellectual Property Bureau of the Ministry of Economy, with 3 Ot: and 100 The samples that are baked at ° C are destroyed by the application of a pulse current of 100 to 110 kA. The reason why the damage current is so small is considered as follows. At a baking temperature of less than 50 ° C, Because isopropyl alcohol and n-butanol are not evaporated, no Si i 2 is formed. (Silica) and CH3S10 ^ .5 (organic silicate) as the second high-resistance layer 4 as the main component, which cannot obtain good withstand voltage performance, and have not obtained a substance with excellent protection ability against pulse current. -38- The paper size is applicable to the national standard (CNS) A4 specification (210 X 297 male * > A7 466507 B7_ V. Description of the invention (36) In addition, at a baking temperature exceeding 800 ° C, it is generated rapidly Isopropanol and n-butanol are evaporated, so the second high-resistance layer 4 with si 〇2 (silica) and CHS i Oi. 5 (organic silicate) as the main components is not formed under normal conditions. Can not obtain good withstand voltage performance, and did not obtain a substance with excellent protection ability against pulse current. From the above results, the eighth embodiment is to bake the second high-resistance layer 4 at a maximum temperature of 50 to 800 ° C, so that the second high-resistance layer 4 having good withstand voltage performance can be applied to the first A high-resistance layer 3 is formed on the side of the sintered body 1. Thereby, the voltage non-linear resistor of the eighth embodiment is excellent in protection ability against pulse current. In the above, although the embodiment that defines the baking temperature of the second high-resistance layer 4 is described as the second component forming S 1 〇2 (silica) and CHS 1 0 ^ .3 (organic oxalate) as main components A representative example of the case of the resistive layer 4, but even after the formation of S 1 〇2 (silica) or A 12 03 (alumina) or A 1 2 03 (alumina) and CHS i Ot.s (organic silicic acid) In the case of the second high-resistance layer 4 as a main component, it can be confirmed that the optimum pulse tolerance can be achieved in the above-mentioned baking temperature range. < Ninth Embodiment > Next, a ninth embodiment will be described. In the ninth embodiment, A 1 s S i 2 0 i 3 (mullite) is used as a main component, and each contains 5 wt% AIP〇4 (aluminum orthophosphate), ferrite), and Fe203 (iron oxide). On the first high-resistance layer 3, SiO2 (silica) 'SiOCH3 (alkoxy) is applicable to the standard of the aa home standard (CNS) A4 (210 X 297 male «) < read the note on the back first Fill in this page again for the items > Install IIII «— — — III — — ^ Printed by Shelley Consumer Cooperative of Intellectual Property Bureau of the Ministry of Economic Affairs 39- A7 A 6 65 Ο 7 _________B7_ V. Description of Invention (37) Silane) • Isopropanol , N-butanol, polysiloxane-based surfactant and acetic acid as components are coated and baked to form si 0 2 (silica) and CHsS 丨 0! .5 (organic silicate) as main components The composition of the second high-resistance layer 4 at time 1 causes the second high-resistance layer 4 to be baked at least 30 ° C to the highest temperature at a rate of 10 to 3 0 Ot / hrs. 0 and 1 at A 1 eS i 2〇i3 (mullite) as the main component, and each containing 5wt% A 1 PO: 1 (aluminum orthophosphate), Fe2 03 (iron oxide) on the first high resistance layer 3, S i 〇2 (silica)., SiOCHaf alkoxysilane), isopropyl alcohol, n-butanol, polysiloxane surfactant and acetic acid as components, and then baking and forming an aqueous solution of S i 〇2 (silica) and CH3S 1 Oi.s (organic silicate) as the second high-resistance layer 4 as the main component, the baking temperature of the second high-resistance layer 4 is at least 30 ° C to the maximum temperature The heating rate is performed in a range of 10 to 300 ° C / hrs. Here, in order to explain the effect of the ninth embodiment, the following samples were prepared. On the first high-resistance layer 3, a solution of Si02 (silica) and SiOCH3 (alkoxysilane), isopropanol, n-butanol, a polysiloxane-based surfactant, and acetic acid as components was applied. When coating and baking, the maximum temperature during baking is 400 ° C · and the heating rate during baking is baking at 5, 10 100, 200, 300 and 400 ° C / hrs to make 6 kinds of samples. For each sample made as above, +, 8/2 0 μ S wave. Double pulse (脉 "Read the precautions on the back before filling out this page) • Order III!-Staff Consumer Cooperatives, Intellectual Property Bureau, Ministry of Economic Affairs Printed paper standards are applicable to 8 national standards (CNS > A4 specifications (210 X 297 mm> -40 A7 466507 B7_) V. Description of the invention (38) Impulse current is added at a level of 60 k A to 100 k A, And measure the current at the time of breaking the sample 値: evaluate the over-voltage protection ability of each sample. ≪ Please read the notice on the back before filling in this page > The results are shown in Fig. 8. It conforms to the ninth embodiment. For the sample, the baking temperature of the second high-resistance layer 4 is within the range of 10 to 300 ° C / hrs, and the sample is destroyed by applying a pulse current of more than 190 kA. The samples that were baked at 5 ° C / hr s and 400 ° C / hr s were destroyed by the addition of a pulse current of 100 to 130 k A. The reason why the damage current is so small is considered as follows At a temperature rising rate of less than 10 ° C / hrs, the reaction proceeds slowly, so it is not completely formed. S i 0 2 (silica) and CH3S i Oi.5 (organic silicate) as the second high-resistance layer 4 as the main component cannot achieve good voltage resistance and reduce the protection ability against pulse current. Ministry of Economic Affairs Intellectual Property Bureau employee consumption cooperation Du printed numbers, at a baking speed of more than 300 ° C / hr s, because isopropyl alcohol is rapidly generated, the evaporation of n-butanol does not make S i 〇2 (silica ) And CH3S i 0 ^ .5 (organic silicate) as the main component of the second high-resistance layer 4 is formed in a normal state, so can not achieve good withstand voltage performance, and the protection ability against pulse current is reduced "from the above As a result, in the ninth embodiment, the second high-resistance layer 4 is baked at a maximum temperature of 10 to 300 ° C / hr s, so that the second high-resistance layer 4 with good withstand voltage performance can be subjected to the first high The side of the sintered body 1 of the resistive layer 3 is formed. "Thus, the voltage non-linear resistor of the ninth embodiment has excellent protection ability against pulse current. This paper is applicable to Bffl furniture standard < CNS) A4 size (210x297mm) * > -41-4 6 65 0 7 A7 __B7_____ V. Invention Ming (39) (锖 "Precautions for reading back 6 before filling out this page} Above, although the example of limiting the baking temperature of the second high resistance layer 4 is described as forming S i 〇2 (chopping stone) and CH: sS i 〇. 3 (organic silicate) as a representative example of the second high-resistance layer 4 as the main component, but even after the formation of S 1 〇 2 (silica) or A 1 2 03 (oxidation Aluminum 1) or A 1 203 (alumina) and CH3S i Oi.5 (organic silicate) as the second high-resistance layer 4 as the main component. Case 1 can also be confirmed in the above-mentioned baking temperature range. Achieve optimal pulse tolerance. According to the first embodiment of the present invention, the first high-resistance layer 3 formed on the side of the sintered body 1 is made of AleS i 2〇i3 (mollite) as a main component and contains A1 PCU (aluminum orthophosphate) 1. 〇 ~ 25wt%, Fe2O3 (iron oxide) 0 · 1 ~ 1 5wt%, can improve the moisture resistance characteristics. In addition, according to the second embodiment to the ninth embodiment of the present invention, let the first high-resistance layer 3 formed on the side of the sintered body 1 have A 丨 6S i 2 013 (mollite) as a main component, and Contains A1 P〇4 (aluminum orthophosphate) 1.0 ~ 25wt%,

MnF e2〇4 (鐵素體）0 . 1 〜1 ，F e2〇3 經濟部智慧財產局貝工消费合作杜印製 (氧化鐵）0.1〜15wt%之成分構成，則可令粘合 強度高，且發揮優良的耐電壓性能，令對於雷脈衝過電壓 等之浪洞的保護能力提高- 更且，於第一高電阻層3上，形成第二高電阻層4之 以S 1 〇2 (矽石）或A 12〇3 (氧化鋁）或S i 〇2 (矽 石）和CHaS 1 0^5 (有機矽酸鹽）或A i2〇3 (氧 化鋁）和CH3S i 〇1.5 (有機矽酸鹽）作爲主成分之非 本紙張尺度適用令國困家標準（CNS)A4規格（210 X 297公釐） -42 - 4 6 650 7 A7 B7 五、發明說明（40) 晶質第二高電阻層4，則可更再發揮優良的耐電壓性能， ’且對於雷脈衝過電壓等之浪洞的保護能力提高。 {請先閱讀背面之*ί意事項再填寫本頁) <第十實施形態> 其次，說明關於與上述第一實施形態至第九實施形態 以不同成分所構成之本發明之電壓非線性電阻器及其製造 方法的實施形態。 第十實施形態爲在氧化鋅作爲主成分之燒結體側面， 塗佈以A 1 6S i 2〇13 (模來石）作爲主成分，且於磷酸 鋁中含有磷酸錳鹽之高電阻劑，並進行烘烤處理形成高電 阻層之電壓非線性電阻器。 圖9爲本實施形態之陶瓷元件的截面圖。如圖9所示 般，將燒結體作成圓板狀，並於此燒結體1 1之兩端面（ 圖9之上下面）設置電極1 2 ^ 又，於燒結體11之側面（圖9之圓周方向），形成 第一高電阻層1 3。 更且，於第一高電阻層1 3上，形成第二側面高電阻 膜1 4。 經濟部智慧財產局員工消费合作社印製 此處’說明取得陶瓷元件之燒結體1 1的製造工程。 首先，於氧化鋅（Zn〇）中分別添加0 . 5莫耳％ 之氧化鉍’氧化錳，二氧化矽，氧化絡，及各1莫耳％之 氧化鈷，氧化銻，氧化鎳，並且調整氧化鋅。 其中’將此原料與水和有機粘合劑類共同放入混合裝 置並混合’且以噴霧乾燥器將此混合物噴霧造粒。 本紙張尺度適用中國Β家標準（CNS>A4規格（210 * 297公瘦） -43 - A7 46 650 7 ___B7_ 五、發明說明（41) 其次，將此造粉粒放入模具並加壓，成形爲例如直徑 6 0mm '厚度3 〇mm之圓板1又，成形出例如標度爲 1 0 Ommx 1 〇 Ommx 3 〇mm之試驗片 將如此處理所得之成形體以約1 2 0 0 °C之溫度煅燒 ，取得燒結體1 1和試驗片P 1。 於此試驗片P1上，將AlsS i2〇13 (模來石）作 爲主成分，且將磷酸鋁和磷酸錳調整至適量，高電阻劑懸 垂，調整濕潤角（wetting angle)後，塗佈另外的試驗片 P1和燒結體11 ，並於200〜600 °C之溫度範圍下 進行烘烤，形成第一高電阻層1 3。 此時，塗佈令試驗片與燒結體所形成之第一高電阻層 13的膜厚爲呈一定的適量高電阻劑。 其次，爲了調查粘合強度|乃將形成第一高電阻層 1 3之試驗片P 1的粘合面與直角面硏磨，作成7 Omm X 7 Ommx 2 Omm 之試驗片 P 2。 另一方面，將形成第一高電阻層1 3之燒結體1 1的 兩端面硏磨，且將鋁電極熔射，取得設置電極1 2之電壓 非線性電阻器。 此處，電壓非線性電阻器之高電阻層膜厚與試驗片 P 2之膜厚爲於硏磨時測定。 比較例爲使用與本發明同樣之燒結體1 1 ，試驗片 P 1 ，並製作以A 1 2〇3作爲主成分，且含有適量磷酸鋁 之物質，調整其濕潤角，並以本實施形態同樣之溫度烘烤 ，將其製作成爲比較例1。 本紙張尺度適用中國Η家標準（CNS>A4規格（210 X 297公釐） <锖先閱讀背面之沒意事項再填寫本頁> -裝 I — I I 訂·！ —· 經濟部智慧財產局員工消费合作社印製 -44- 46 650 7 A7 B7_五、發明說明（42)表4中示出本發明及比較例1之濕潤角，剝離面積， 衝擊粘合強度，拉引粘合強度|放電耐量特性·過電壽命 特性，耐濕特性。 (請先闉讀背面之沒意事項再填寫本頁)MnF e204 (ferrite) 0.1 ~ 1, F e203 The composition of 0.1 ~ 15wt% (iron oxide) made by the shellfish consumer cooperation of the Intellectual Property Bureau of the Ministry of Economic Affairs can make the adhesive strength high , And exert excellent voltage withstand performance, so that the protection ability against surges such as lightning overvoltages is improved-moreover, on the first high-resistance layer 3, a second high-resistance layer 4 is formed by S 1 〇 2 ( Silica) or A 12〇3 (alumina) or S i 〇2 (silica) and CHaS 1 0 ^ 5 (organic silicate) or A i203 (alumina) and CH3S i 〇1.5 (organic silicon Acid salt) as the main component is applicable to the National Standard for Household Standards (CNS) A4 (210 X 297 mm) -42-4 6 650 7 A7 B7 V. Description of the invention (40) The second highest crystal quality The resistance layer 4 can further exert excellent withstand voltage performance, and the protection ability against surges such as lightning overvoltages is improved. {Please read the matter on the back of the page before filling in this page) < Tenth embodiment > Next, the voltage non-linearity of the present invention composed of different components from the first to ninth embodiments will be described. An embodiment of a resistor and a manufacturing method thereof. A tenth embodiment is that a side surface of a sintered body having zinc oxide as a main component is coated with a high resistance agent containing A 1 6S i 2013 (mollite) as a main component and containing manganese phosphate in aluminum phosphate, and A voltage non-linear resistor with a high resistance layer is subjected to a baking process. Fig. 9 is a sectional view of a ceramic element according to this embodiment. As shown in FIG. 9, the sintered body is formed into a circular plate shape, and electrodes 1 2 are provided on both end faces of the sintered body 11 (above and below FIG. 9), and on the side surface of the sintered body 11 (circumference of FIG. 9). Direction) to form the first high-resistance layer 1 3. Furthermore, a second lateral high-resistance film 14 is formed on the first high-resistance layer 13. Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs Here's a description of the manufacturing process for obtaining the sintered body 11 of the ceramic element. First, 0.5 mol% of bismuth oxide 'manganese oxide, silicon dioxide, oxide complex, and 1 mol% of cobalt oxide, antimony oxide, and nickel oxide were added to zinc oxide (Zn0), and adjusted. Zinc oxide. Among them, "this raw material is put into a mixing device together with water and organic binders and mixed", and the mixture is spray-granulated with a spray dryer. This paper size is in accordance with Chinese B standards (CNS > A4 size (210 * 297 male thin) -43-A7 46 650 7 _B7_ V. Description of the invention (41) Secondly, put this granulated powder into a mold and pressurize to form For example, a circular plate 1 with a diameter of 60 mm and a thickness of 30 mm is formed. For example, a test piece with a scale of 100 mm x 100 mm x 300 mm is formed. The formed body thus processed is formed at a temperature of about 120 ° C. Calcined at temperature to obtain sintered body 11 and test piece P 1. On this test piece P1, AlsS i203 (mollite) was used as a main component, and aluminum phosphate and manganese phosphate were adjusted to a proper amount, and a high-resistance drape After adjusting the wetting angle, additional test pieces P1 and sintered body 11 were coated and baked at a temperature range of 200 to 600 ° C to form a first high-resistance layer 13. At this time, coating The film thickness of the first high-resistance layer 13 formed by the test piece and the sintered body is a certain amount of high-resistance agent. Second, in order to investigate the adhesive strength | The adhesive surface and the right-angle surface of 1 were honed to make a test piece P 2 of 7 Omm X 7 Ommx 2 Omm. The both ends of the sintered body 11 forming the first high-resistance layer 13 are honed, and the aluminum electrode is fused to obtain a voltage non-linear resistor provided with the electrode 12. Here, the voltage non-linear resistor The film thickness of the high-resistance layer and the test piece P 2 were measured during honing. As a comparative example, the same sintered body 1 1 and test piece P 1 as those of the present invention were used, and A 1 2 03 was prepared as a main component. And contains a suitable amount of aluminum phosphate, adjust its wetting angle, and bake it at the same temperature as in this embodiment to make it into Comparative Example 1. This paper size applies the Chinese standard (CNS > A4 specification (210 X 297) Mm) < 锖 Read the unintentional matter on the back before filling in this page >-Install I — II Order ·! — · Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs-44- 46 650 7 A7 B7_ Explanation of the invention (42) Table 4 shows the wetting angle, peeling area, impact adhesion strength, pull adhesion strength | discharge resistance characteristics, over-current life characteristics, and moisture resistance characteristics of the present invention and Comparative Example 1. (Please first (闉 Read the unintentional matter on the back and fill out this page)

I . n n i t I ^ I « D n n ϋ n I I 經濟部智慧財產局員工消费合作社印製 -45 - 本紙張尺度適用t國國家標準（CNS)A4規格（210 X 297公釐） 466507 A7 ^ L Κ I J #0 經濟部智慧財產局員工消费合作社印製 明 耐濕特性 1 1 1 I 1 i 〇 CN 1 1 § 1 1 過電壽 命特性 (hrs) 1000以上 1000以上 1000以上 1000以上 1000以上 1000以上 1000以上 1000以上 S 120kA X X X X X 〇 100kA . X 〇 X 〇 〇 〇 _ m !^ΠΤΐ ίρΓ 80kA X 〇 〇 〇 〇 〇 〇 60kA X 〇 〇 〇 〇 〇 〇 〇 40kA 〇 〇 〇 〇 〇 〇 〇 〇 X 拉引粘 合強度 (MPa) 〇〇 o oo Ξ οα 一 ι ' I 衝擊粘 合強度 (mm) s s ο 〇 〇 g s r—» 剝離面積 1 沄 ι i 〇 o o ο 膜厚度 (μιη) 8 cn •Η S CO Ο cn 沄 o CO § 濕潤角 s s … 供試 N.O '~' OJ 寸 LO \〇 〇〇 比較例 11 I — IV. ----! — 訂---11 I---^ <請先《讀背面之沒意事項再填寫本頁) 本紙張尺度適用中a國家標準（CNS)A4規格（210 X 297公t ) -46 - A7 466507 B7___ 五、發明說明（44) 供試試料爲各準備8個。 此處’所謂剝離面積爲指非線性電阻器之外觀，即電 壓非線性電阻器之高電阻層1 3由燒結體1 1剝離之面積 總和。 衝擊粘合強度爲以Dupon式之耐衝擊性試驗（參照 JJS K 5400 8.3)進行，且試驗片爲使用 試驗片P 2 ’將質量5 0 0± 13之重量由一定之高度落下 ，令高電阻曆面裂開，並且繪出不產生剝離之高度位置的 平均。 高電阻層之拉引粘合強度爲根據 JIS K 5400 8.7進行。此處使用試驗片 P 2作爲試驗片。拉引強度爲繪出平均値。 放電耐量特性爲將4/1 0 v S之脈衝以5分鐘間隔 通電2回，令電流値由4 0 kA上升至2 0 kA直到引起 破壞及沿面閃爍爲止。 過電壽命特性爲以周圍溫度1 2 0°C，過電率9 5% (A C波峰値）之條件下進行，測定初期漏電流値I 〇與 T時間後之漏電流値I t之比I t / I 〇爲超過1 . 1之 時間。 耐濕試驗爲以周圍溫度爲2 ，於令試驗槽內保持 一定濕度之乾燥器內浸入氯化鉀水溶液。此時，將相對濕 度爲調濕成約8 5%，並將電壓非線性電阻器放置於乾燥 器內。6 0小時後，測定電壓非線性電阻之D C 1 ^ A 電壓値V6Q 1並求出由初期電壓値V。開始之變化。此處 — — — — — — — —— * * — — — — 11— ^* — — — 1 —-- (請先《讀背面之注意事項再填寫本頁> 經濟部智慧財產局MBC工消费合作杜印製 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公* ) -47- A7 46 650 7 ____B7 五、發明說明（45) •變化率（％)爲以（v6。一 V。）X100/V。型式計 算。 由表4得知，如本實施形態所示之以A 1 s S i 2 i 3 (模來石）作爲主成分，且將磷酸鋁和磷酸錳調整至適量 之高電阻層爲較比較例之濕潤角度更小。 更且，經由磷酸鋁和磷酸錳調整至適當量，則可令濕 潤角度最適化。濕潤角度若爲6 0 °C以下，則剝離面積爲 1 0 〇mm以下，衝擊粘合強度亦爲5 0mm以上，拉引 粘合強度爲提高至0 . 8MP a以上，而高電阻膜之厚度 爲5 0〜2 0 0 者，則衝擊粘合強度，拉引粘合強度 亦強，且放電耐量特性亦爲良好。 又，以A 16S i2〇13 (模來石）作爲主成分，且將 磷酸鋁和磷酸錳調整至適量之高電阻劑爲較比較例之過電 壽命，耐濕特性均更爲優良。 <第十一實施形態> 第十一實施形態爲於第十實施形態所示濕潤角度3 0 °之高電阻劑中，適量含有？62〇3者，及適當含有 Μ n F e 2 0 4者分別烘烤，形成高電阻層。又，亦製作其 上再塗佈以S i Ο 2，A丨2 0 3作爲主成分之非晶質高電 阻劑後烘烤·形成非晶質高電阻膜4之物質。 比較例爲製作將第十實施形態所示之濕潤角度3 0 °之高 電阻劑所構成之高電阻層中，塗佈以S i 0 2， A 1 2 0 3作爲主成分的非晶質高電阻劑，烘烤之非線性電 本紙張尺度適用中國國家標準<CNS)A4规格（210 X 297公釐) -48 - 'I. Nnit I ^ I «D nn ϋ n II Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs -45-This paper size is applicable to National Standards (CNS) A4 (210 X 297 mm) 466507 A7 ^ L Κ IJ # 0 Printed by the Consumers ’Cooperative of the Ministry of Economic Affairs’ Intellectual Property Bureau. Moisture resistance 1 1 1 I 1 i 〇CN 1 1 § 1 1 Over-current life characteristics (hrs) 1000 or more 1000 or more 1,000 or more 1,000 or more or more 1,000 or more or more 1,000 or more or more 1,000 or more or less 1,000 Above 1000 or above S 120kA XXXXX 〇100kA. X 〇X 〇〇〇〇_ m! ^ ΠΤΐ ίρΓ 80kA X 〇〇〇〇〇〇〇〇〇〇〇〇〇〇〇〇〇〇〇〇〇〇〇〇〇k Adhesive strength (MPa) 〇〇o oo Ξ οα 1ι 'I Impact adhesive strength (mm) ss ο 〇〇gsr— »Peel area 1 沄 ι i 〇oo ο Film thickness (μιη) 8 cn • Η S CO Ο cn 沄 o CO § Wet angle ss… NO NO ~~ OJ Inch LO \ 〇〇〇 Comparative Example 11 I — IV. ----! — Order --- 11 I --- ^ < Please first "Read the unintentional matters on the reverse side and fill out this page) a National Standard (CNS) A4 specification (210 X 297 male t) -46-A7 466507 B7___ 5. Description of the invention (44) Prepare 8 samples for each sample. Here, the so-called peeling area refers to the appearance of the non-linear resistor, that is, the total area where the high-resistance layer 13 of the voltage non-linear resistor is peeled from the sintered body 11. The impact adhesive strength is performed by a Dupon-type impact resistance test (refer to JJS K 5400 8.3), and the test piece is a test piece P 2 '. The weight of the mass 5 0 ± 13 is dropped from a certain height to make the high resistance. The calendar surface is cracked, and the average of the height positions where no peeling occurs is plotted. The tensile adhesive strength of the high-resistance layer is performed in accordance with JIS K 5400 8.7. A test piece P 2 was used here as a test piece. The pull strength is plotted as the average 値. The discharge tolerance characteristic is that the pulse of 4/1 0 v S is energized twice at 5 minute intervals, and the current 値 is increased from 40 kA to 20 kA until it causes damage and flashes along the surface. The over-current life characteristics are measured at an ambient temperature of 120 ° C and an over-current rate of 9 5% (AC wave peak). The ratio of the initial leakage current 値 I 〇 to the leakage current after T time 値 I t is measured. t / Io is a time exceeding 1.1. The humidity resistance test is to immerse a potassium chloride aqueous solution in a desiccator that maintains a certain humidity in the test tank at an ambient temperature of 2. At this time, adjust the relative humidity to about 85%, and place the voltage non-linear resistor in the dryer. After 60 hours, the voltage D C 1 ^ A voltage 电压 V6Q 1 of the voltage nonlinear resistance was measured and the initial voltage 値 V was obtained. The beginning changes. Here — — — — — — — — —— * * — — — — 11— ^ * — — — 1 —-- (Please read the “Notes on the back page before filling out this page”> MBC Worker, Intellectual Property Bureau, Ministry of Economic Affairs Consumption cooperation Du Du printed this paper is applicable to the Chinese National Standard (CNS) A4 specification (210 X 297 male *) -47- A7 46 650 7 ____B7 V. Description of the invention (45) • Change rate (%) is (v6). One V.) X100 / V. Type calculation. As can be seen from Table 4, as shown in this embodiment, A 1 s S i 2 i 3 (mollite) is used as the main component, and aluminum phosphate and manganese phosphate are adjusted. The high-resistance layer to a proper amount has a smaller wetting angle than the comparative example. Furthermore, by adjusting the aluminum phosphate and manganese phosphate to an appropriate amount, the wetting angle can be optimized. If the wetting angle is 60 ° C or less, peeling If the area is 100 mm or less, the impact adhesive strength is also 50 mm or more, the tensile adhesive strength is increased to 0.8 MP a or more, and the thickness of the high resistance film is 50 to 2 0 0, the impact adhesive strength is Combined strength, tensile bonding strength is also strong, and discharge resistance characteristics are also good. Also, A 16S i2〇13 (Mullite) As the main component, an aluminum phosphate and a manganese phosphate adjusted to a suitable amount of a high-resistance agent have a longer electric life than the comparative example, and both have better moisture resistance characteristics. ≪ Eleventh embodiment > The eleventh embodiment is Among the high-resistance agents having a wetting angle of 30 ° as shown in the tenth embodiment, those containing an appropriate amount of? 62 03 and those containing an appropriate amount of Mn F e 204 were baked separately to form a high-resistance layer. Then, an amorphous high-resistance agent having Si O 02, A 丨 203 as a main component was coated thereon, and then baked and formed into an amorphous high-resistance film 4. A comparative example is to produce a tenth embodiment In the high-resistance layer composed of the high-resistance agent with a wetting angle of 30 ° as shown, an amorphous high-resistance agent with S i 0 2 and A 1 2 0 3 as the main components is coated, and the non-linear electrical resistance of the baking is This paper size applies to Chinese National Standard < CNS) A4 (210 X 297 mm) -48-'

(晴先閱讀背面之沒意事項再填寫本頁J -裝— —II 訂---！1!^ 經濟部智慧財產局員工消t合作社印製 46 650 7 A7 B7__五、發明說明（46) 阻體（比較例2 )，及以A 1 2 0 3作爲主成分，且含有適 量磷酸鋁所構成之高電阻層中，塗佈以S i 0 2， A L 2 0 3作爲主成分之非晶質高電阻劑，並於1 0 0〜 3 5 0 °C烘烤之非線性電阻器（比較例3 )。 此處，高電阻層之厚度均爲調整塗佈量使其呈現一定 厚度。 * 表5中亦出本發明品及比較例2，比較例3之 F e2〇3添加量，Mn F e2〇4添加量’非晶質之高電阻 層之有無，放電耐量特性，過電壽命特性’耐濕特性。 <諳先《讀背面之注意事項再填寫本頁> 裝 a ----訂-----— IHM, 經濟部智慧財產局貝工消t合作社印« 本紙張尺度適用t B國家標準（CNS)A4規格（210 X 297公* ) -49- 4 8 65 0 7 A7 Β7 五、發明說明 經濟部智慧財產局貝工消費合作社印製 概 耐濕 特性. (%) tn 1 〇 j 〇 1 〇 1 〇 < 〇 1 to ◦ ( 〇 1 〇 1 〇 OO 1 i過電壽 命特性 (hrs) 1000 以上 1000 以上 1000 以上 1000 以上 o o \〇 1000 以上 o o \〇 1000 1000 o 〇 放電耐量特性 1 20kA X 〇 X X X X 〇 100kA 〇 〇 〇 〇 X 〇 〇 80kA 〇 〇 〇 〇 〇 〇 〇 60kA 0 〇 〇 〇 〇 〇 〇 X X 4 Ok A 〇 〇 〇 〇 〇 〇 〇 〇 〇 X 烘烤溫度 (°C ) o o CN 〇 〇 CN o 〇 <>i O o CN o o 〇 O o o o o CN o 〇 CN o CN o o r~i 〇 o cn o o 〇 〇 o o o CO o m o o o o 〇 〇 Μ Π ^ ( P 2 0 7 ) 3 (w t % ) cn 〇 un r·* m 〇 Α1Ρ〇4 添加量 (w t %) oo oo oo oo OO oo oo cn CM 〇c 尨Ο —1 OJ cn ι/Ί r- oo ------------ '裝，---— II!— 訂------i I · *5^、 (請先Μ讀背面之注意事項再填寫本頁) 本紙張尺度適用争a a家標準<CNS)A4規格（210 X 297公釐） -50- 46 650 7 A7 ------ 五、發明說明（48) 由表5得知，以A I 6s i 2〇13 (模來石）作爲主成 分，R將磷酸鋁和磷酸錳調整至調當量之高電阻劑中含有 適量F e2〇3者，及含有適量MnF e2〇4者，令耐濕特 性大爲提高，但若Fe2〇3爲〇 2〜5wt%或 Mn F e2〇4爲1〜1 〇wt%以外，則放電耐量特性降 低，耐濕特性降低。又，和MnFe2〇4若爲上 述範圍內，則即使同時使用亦對兩者無影響 又，於此些高電阻層上再形成以S i 〇2，A 1 2〇3, 作爲主成分之非晶質高電阻層者，則耐濕特性更加提高。 <第十二實施形態> 其次說明本發明之第十二實施形態》 調整側面高電阻劑中之磷酸鋁鹽及磷酸錳鹽之添加量 '檢討_電阻層中之A 1 P0.1，(P2O7) 3之重 量％及烘烤溫度。更且，亦檢討非晶質高電阻膜形成時之 烘烤溫度。其結果示於表6。 ------------S • n n 一-,J n «I 1 I ί請先《讀貧面之注f項再填寫本頁) 經濟部智慧财產局負工消费合作杜印製 本纸張尺度適用1ί*國國家標準<CNS)A4規格（210 * 297公釐） -51 - 4 6 650* A7 _ B7 五、發明説明49) _^_ (％) 起毖 _ii ς7 ς,ο- Γ0- Γ0- 0Z, 0°? (SJlotl or K1 000 1 ^r;1 000 1 τγίτοοοι ,-T K1 0001 q κι οοοι 叫$ 0001 Τ ΚΙ 00Ξ ^γ:1 οοοι TX1 0001 ooln vil 〇 〇 x 〇 〇 x 〇 〇 〇(Qing first read the unintentional matter on the back and then fill out this page J-equipment-II order ---! 1! ^ Printed by the staff of the Intellectual Property Bureau of the Ministry of Economy 46 650 7 A7 B7 ) Resistor (Comparative Example 2), and a high-resistance layer composed of A 1 2 0 3 as a main component and containing an appropriate amount of aluminum phosphate, and coated with a non-aqueous material having S i 0 2 and AL 2 0 3 as main components A non-linear resistor (Comparative Example 3) which is a crystalline high-resistance agent and baked at 100 to 350 ° C. Here, the thickness of the high-resistance layer is adjusted to the coating amount so that it exhibits a certain thickness. * Table 5 also shows the product of the present invention and Comparative Example 2 and Comparative Example 3 with the addition amount of F e203 and the addition of Mn F e204 'the presence or absence of an amorphous high-resistance layer, discharge tolerance characteristics, and over-current life. Characteristics' Moisture resistance. ≪ 谙 "Read the precautions on the reverse side before filling out this page " Install a ---- Order -----— IHM, printed by the Ministry of Economic Affairs, Intellectual Property Bureau, Beigong Cooperative Cooperative« This Paper size is applicable to t B National Standard (CNS) A4 specifications (210 X 297 male *) -49- 4 8 65 0 7 A7 Β7 V. Description of the invention Wet characteristics. (%) Tn 1 〇j 〇1 〇1 〇 < 〇1 to ◦ (〇1 〇1 〇OO 1 i Over-current life characteristic (hrs) 1000 or more 1000 or more 1000 or more 1000 or more oo \ 〇1000 or more oo \ 〇1000 1000 o 〇Discharge tolerance characteristics 1 20kA X 〇XXXX 〇100kA 〇〇〇〇 × 〇〇80kA 〇〇〇〇〇〇〇〇〇〇〇〇〇〇〇〇〇〇〇〇〇〇〇〇〇〇〇〇〇〇〇〇 00 〇〇〇X baking temperature (° C) oo CN 〇〇CN o 〇 < &i; i O o CN oo 〇O oooo CN o 〇CN o CN oor ~ i 〇 cn oo 〇〇ooo CO omoooo 〇〇 Μ Π ^ (P 2 0 7) 3 (wt%) cn 〇un r · * m 〇Α1Ρ〇4 Addition amount (wt%) oo oo oo oo OO oo oo cn CM 〇c 尨 〇 —1 OJ cn ι / Ί r- oo ------------ 'Equipment, ---— II! — Order ------ i I · * 5 ^, (Please read the precautions on the back first (Fill in this page) Applicable standards for this paper & CNS) A4 specification (210 X 297 mm) -50- 46 650 7 A7 ------ V. Description of invention (48) Based on AI 6s i 2〇13 (Mullite) The main component, R, adjusts the aluminum phosphate and manganese phosphate to the equivalent high resistance agent containing the appropriate amount of F e203 and the appropriate amount of MnF e204, which greatly improves the moisture resistance characteristics, but if Fe2 03 is 〇2 ~ 5wt% or Mn F e204 is other than 1 ~ 10wt%, the discharge resistance characteristic decreases and the moisture resistance characteristic decreases. In addition, if the content of MnFe2O4 is within the above-mentioned range, it will not affect the two even if they are used together. On these high-resistance layers, S i 〇2, A 1 203, which is the main component, are further formed. With a crystalline high-resistance layer, the moisture resistance characteristics are further improved. < Twelfth Embodiment > Next, the twelfth embodiment of the present invention will be described. "Adjusting the addition amount of aluminum phosphate and manganese phosphate in the side high-resistance agent 'review_A 1 P0.1 in the resistance layer, (P2O7) 3% by weight and baking temperature. Furthermore, the baking temperature during the formation of the amorphous high-resistance film was also reviewed. The results are shown in Table 6. ------------ S • nn 一-, J n «I 1 I ί Please read" Note f on the poor side before filling out this page ") Intellectual Property Bureau of Ministry of Economic Affairs The paper size of Du printed paper is applicable to 1 national standard < CNS) A4 specification (210 * 297 mm) -51-4 6 650 * A7 _ B7 V. Description of the invention 49) _ ^ _ (%) Starting from _ii ς7 ς, ο- Γ0- Γ0- 0Z, 0 °? (SJlotl or K1 000 1 ^ r; 1 000 1 τγίτοοοι, -T K1 0001 q κι οοοι is called $ 0001 Τ ΚΙ 00Ξ ^ γ: 1 οοοι TX1 0001 ooln vil 〇〇x 〇〇x 〇〇〇

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CNS 本紙張尺度適用中困國家標準<CNS)A4規格（210 * 297公釐） -52- 經濟郤智慧财產局霣工消费合作社印製 4 6 6507 a? _B7__ 五、發明說明（50) 由表6可知，Mn4 (P2O7) 3之添加量在0 . 5〜 3 w t %之範圍內時，則放電耐量特性和過電壽命特性| 耐濕試驗爲較比較例顯示更爲良好之特性，若再令高電阻 層之烘烤溫度以1 5 0〜6 0 0 °C，非晶質之高電阻膜以 1 5 0〜3 5 0 °C進行·則可取得更加良好之特性。 又，若A i P〇4爲5〜2〇wt%以外，則可知放電 耐量爲呈定値*認爲其係因A I P 〇4若爲上述範圍以外， 則粘合強度爲呈定値。 如第十二實施形態所示般，若烘烤溫度高，則過電壽 命特性有降低之傾向。其係因若在高溫下進行烘烤，則燒 結體之結晶相爲發生相轉移。因此，期望令烘烤溫度爲儘 可能以低溫度下進行烘烤。 此外，本發明亦可如下。 於本發明品中使用A 1 6S i 2〇13 (模來石）作爲高 電阻層之主成分，係因其與燒結體之熱膨脹係數配合。即 ，若對素材注入大的浪洞能量則隨著溫度的急速上升，令 素材與高電阻層的熱膨脹差變大，且高電阻層由素材上剝 離，令放電耐量特性降低。 於高電阻層之主成分中若使用A 1 0S i 2〇13 (模來 石），則在20〜200r之範圍中，素材與高電阻層之 熱膨脹係數之差爲±2 . 0X10-6 /°c，比使用其他之 金屬氧化物，更可取得安定的高電阻層β 尙，本發明並非限定於上述及圖面所示的實施形態< 在不變更其要旨之範圍內可作適當變更實施。 本紙張尺度適用中國困家標準<CNS>A4規格（210 X 297公爱)-53 - ' ~ — I1IIIIIH I -11--— I— — — — — !--^ <諝先明婧背Λ之注意事項再廛寫本霣> 4 6 65 0 7 Α7 87 五、發明說明（51) 例如，於本實施形態中，雖記述於氧化鋅作爲主成分 之燒結體側面，以A 1 s S i 2 0 i 3 (模來石）作爲主成分 -且含有Α1Ρ〇4 5.0 〜20wt%， Μ η 4 ( Ρ 2 Ο 7 ) 3 0 . 5〜3wt%之側面電阻層，但 即使加入 ΜΠ2Ρ2〇7 ’Mg3 (P〇2) 4， C a ( Ρ Ο 3 ) 2代替Μ η 4 ( Ρ 2 Ο 7 ) 3亦可確認顯示同 樣之效果。 若根據以上說明之本發明第十實施形態至第十二實施 形態，則可使用更良好且安定之放電耐量特性及耐特性惡 化兩者優良之陶瓷元件，取得電壓非線性電阻器。 〔發明之效果〕 若根據如上述之本發明，經由形成粘合強度高且可發 渾優良耐電壓性能之高電阻層，則可提供能提高對於雷脈 衝和過電壓等浪洞之保護能力之電壓非線性電阻器及其製 造方法。 〔圖面之簡單說明〕 〔圖1〕 示出本發明第一至第九實施形態中之電壓非線性電阻 器之截面圖。 〔圖2〕 示出本發明第三實施形態之電壓非線性電晅器中，第 {靖先《讀背面之注意事項再填寫本頁>CNS This paper standard applies to the national standard of the middle and low levels < CNS) A4 specification (210 * 297 mm) -52- Printed by the Economic but Intellectual Property Bureau, Machining and Consumer Cooperatives 4 6 6507 a? _B7__ V. Description of the invention (50) As can be seen from Table 6, when the addition amount of Mn4 (P2O7) 3 is in the range of 0.5 to 3 wt%, the discharge tolerance characteristics and the over-current life characteristics | moisture resistance test show better characteristics than the comparative example, If the baking temperature of the high-resistance layer is further set to 150 to 600 ° C, and the amorphous high-resistance film is set to 150 to 350 ° C, even better characteristics can be obtained. In addition, if A i P〇4 is other than 5 to 20 wt%, it can be seen that the discharge tolerance is constant. * It is considered that if A I P 〇4 is outside the above range, the adhesive strength is constant. As shown in the twelfth embodiment, if the baking temperature is high, the over-current life characteristics tend to decrease. This is because if the baking is performed at a high temperature, the crystal phase of the sintered body undergoes phase transfer. Therefore, it is desirable to make the baking temperature as low as possible. In addition, the present invention may be as follows. In the product of the present invention, A 1 6S i 2 013 (mollite) is used as the main component of the high-resistance layer because of its combination with the thermal expansion coefficient of the sintered body. That is, if a large cavity energy is injected into the material, the temperature rises rapidly with the material, and the thermal expansion difference between the material and the high-resistance layer becomes larger, and the high-resistance layer is peeled off from the material, which reduces the discharge tolerance characteristics. If A 1 0S i 2〇13 (Mullite) is used as the main component of the high-resistance layer, the difference between the thermal expansion coefficient of the material and the high-resistance layer is within the range of 20 to 200r. 0X10-6 / ° c, it is possible to obtain a stable high-resistance layer β 比 than using other metal oxides. The present invention is not limited to the embodiments described above and shown in the drawings. ≪ Appropriate changes can be made without changing the gist thereof. Implementation. This paper size is applicable to the standard of Chinese families < CNS > A4 (210 X 297 public love) -53-'~ — I1IIIIIH I -11-— I — — — — —!-^ ≪ 谞 先 明 婧Rewrite the note of the back Λ > 4 6 65 0 7 A7 87 V. Description of the invention (51) For example, in this embodiment, although it is described on the side of the sintered body with zinc oxide as the main component, A 1 s S i 2 0 i 3 (mollite) as the main component-and contains A1PO4 5.0 ～ 20wt%, Μ η 4 (Ρ 2 〇 7) 3 0. 5 ～ 3wt% side resistance layer, but even if ΜΠ2Ρ2 is added 〇7 'Mg3 (P〇2) 4, and C a (P 0 3) 2 instead of M η 4 (P 2 0 7) 3 also confirmed that the same effect was exhibited. According to the tenth to twelfth embodiments of the present invention described above, it is possible to obtain a voltage non-linear resistor by using a ceramic element having better and stable discharge withstand characteristics and excellent deterioration in withstand characteristics. [Effects of the Invention] According to the present invention as described above, by forming a high-resistance layer with high adhesive strength and excellent voltage resistance, it is possible to improve the protection ability against waves such as lightning pulses and overvoltages. Voltage non-linear resistor and manufacturing method thereof. [Brief Description of Drawings] [Fig. 1] A sectional view showing a voltage non-linear resistor in the first to ninth embodiments of the present invention. [Fig. 2] In the voltage non-linear electric appliance of the third embodiment of the present invention, the {{Jianxian "Read the precautions on the back side and then fill out this page >

-裝 • I ϋ n n n tr---------/A 經濟部智慧财產局員工消费合作杜印製 本紙張尺度適用中B困家楳準<CNS)A4规格（210 X 297公釐〉 -54- A7 466507 B7_ 五、發明說明（52) 一及第二高電阻層之厚度與過電壓保護能力之關係圖。 〔圖3〕 示出本發明第四實施形態之電壓非線性電阻器中，形 成第一高電阻層之工程中，以製作混合流漿之混合工程之 鐵素體及氧化鐵之平均粒徑與過電壓保護能力之關係圖。 〔圖4〕 示出本發明第五實施形態之電壓非線性電阻器中·形 成第一高電阻層之工程中，於鐵素體及氧化鐵之添加後， 至塗佈及烘烤終了之時間與過電壓保護能力之關係圖。 〔圖5〕 示出本發明第六實施形態之電壓非線性電阻器中，第 一高電阻層形成時之烘烤溫度與過電壓保護能力之關係圖 〔圖6〕 示出本發明第七實施形態之電壓非線性電阻器中，第 一高電阻層形成時之烘烤溫度與過電壓保護能力之關係圖 〔圖7〕 示出本發明第八實施形態之電壓非線性電阻器中，第 — — — mlllti _ — I— I 麵 — I • — — — — — — (锖先《讀背面之泫意事項再填寫本買) 經濟部智慧財產局員工消费合作杜印製 本紙張尺度適用中a國家標準（CNS)A4规格（210 X 297公* ) -55- 4 6 6507 A7 B7 五、發明說明（53) 二高電阻層形成時之烘烤溫度與過電壓保護能力之關係圖 〔圖8〕 示出本發明第九實施形態之電壓非線性電阻器中，第 二高電阻層形成時之烘烤升溫速度與過電壓保護能力之關 係圖。 〔圖9〕 示出本發明第九至第十二實施形態之電壓非線性電阻 器之截面圖。 〔符號之說明〕 1，1 1……燒結體 2 1 1 2 ......電極 3 1 1 3 ......第一高電阻層 4，1 4……第二高電阻層 (請先Μ讀背面之注意事項再填寫本頁) 經濟部智慧財產局Λ工消f合作社印製 -56- 本紙張尺度適用中a a家櫟準（CNS)A4规格（210 X 297公釐）-Equipment • I ϋ nnn tr --------- / A Consumption cooperation between employees of the Intellectual Property Bureau of the Ministry of Economic Affairs, printed paper, applicable paper size &standard; CNS) A4 (210 X 297 Mm> -54- A7 466507 B7_ V. Description of the invention (52) The relationship between the thickness of the first and second high-resistance layers and the overvoltage protection capability. [Figure 3] shows the voltage nonlinearity of the fourth embodiment of the present invention In the resistor, in the process of forming the first high-resistance layer, the relationship between the average particle size of ferrite and iron oxide and the overvoltage protection ability in the mixed process of making a mixed slurry. [Figure 4] shows the present invention In the voltage non-linear resistor of the fifth embodiment · In the process of forming the first high-resistance layer, the relationship between the time after ferrite and iron oxide are added to the end of coating and baking and the overvoltage protection ability [Fig. 5] Fig. 5 shows the relationship between the baking temperature and the overvoltage protection ability when the first high-resistance layer is formed in the voltage nonlinear resistor according to the sixth embodiment of the present invention. [Fig. 6] It shows the seventh of the present invention. In the voltage nonlinear resistor of the embodiment, the first high-resistance layer is formed. The relationship between the baking temperature and the overvoltage protection capability [Fig. 7] shows the voltage non-linear resistor of the eighth embodiment of the present invention, the first — — — mlllti _ — I — I side — I • — — — — — — (I read the “Impacts on the back” before filling out this purchase.) The consumer cooperation of the Intellectual Property Bureau of the Ministry of Economic Affairs Du printed this paper to apply the national standard (CNS) A4 specification (210 X 297 public *) -55 -4 6 6507 A7 B7 V. Explanation of the invention (53) The relationship between the baking temperature and the overvoltage protection ability when the high-resistance layer is formed [Fig. 8] The voltage nonlinear resistor of the ninth embodiment of the present invention is shown. The relationship between the baking temperature rise rate and the overvoltage protection ability when the second high-resistance layer is formed. [Figure 9] A cross-sectional view of a voltage non-linear resistor in the ninth to twelfth embodiments of the present invention. [Symbol [Explanation] 1, 1, 1 ... sintered body 2 1 1 2 ... electrode 3 1 1 3 ... first high resistance layer 4, 1 4 ... second high resistance layer (please (Please read the notes on the back before filling out this page) Printed by the Intellectual Property Bureau of the Ministry of Economic Affairs 56- The size of this paper is suitable for the standard of a a oak (CNS) A4 (210 X 297 mm)

Claims (1)

A8 B8 C8 D8 466507 六、申請專利範圍 第89 1 06706號專利申請案 中文申請專利範圍修正本 修正#充 填请委員明示年<^>月">曰所提之 經濟部智慧財產局員工消費合作社印製 ff·正本有無變更實贺内容是否准予#i。 民國90年8月修正 1 . 一種電壓非線性電阻器，其特徵爲具備以氧化鋅 作爲主成分之燒結體，且於該燒結體之側面具有高電阻層 之電歷非線性電阻器中，該高電阻層爲含有A丨P〇4 (正 磷酸鋁）1 . 0〜2 5 w t %，F e 2 0 3 (氧化鐵） ◦ ·]〜1 5 w t %，且剩餘成分中A 1 6 S 1 2〇i 3 (模 來石）爲最多之成分。 2 . —種電壓非線性電阻器，其特徵爲具備以氧化鋅 作成卞成分之燒結體，且於該燒結體側面具有高電阻層之 電壓非線性電阻器中， 該高電阻層爲含有A 1 P〇4 (正磷酸鋁）1 · 〇〜 25wt%，MnF e2〇4 (鐵素體）0 . 1 〜1 5wt %，F e 2 Ο 3 (氧化鐵）〇 . 1〜1 5 w t %，剩餘成分 中A leS i 2〇i3 (模來石）爲最多之成分。 3 .如申請專利範圍第1項或第2項之電壓非線性電 阻器，其中以該高電阻層作爲第一高電阻層’並於其上再 形成以S i 0 2 (矽石）或A 1 2 Ο 3 (氧化鋁）或S i〇2 (砂石）與C Η 3 S 1 0 i 「> (有機矽酸鹽）或A 1 2 0 3 (氣化鋁）與c Η 3 S 1 0 i . 3 (有機矽酸鹽）作爲主成分 之非晶質第二尚電!沮層。 4 .如申請專利範圍第1項或第2項之電壓非線性電 阻器，其中該高電阻層之厚度爲1 〇 β m〜1 m hi。 本紙張尺度適用中國國家標準（CNS)A4規格（210X297公釐） t請先閲讀背面之注意事項再填寫本育) A. 訂 466507 A8 BS C8 D8 六、申請專利範圍 5 . —種電壓非線性電阻器，其特徵爲具備以氧化鋅 作爲主成分之燒結體，且於該燒結體之側面具有高電阻層 之電壓非線性電阻器中，該高電阻層爲含有下述（1 )或 (2 )的成分 (1) A1P0<1(正磷酸鋁）1 .〇 〜25wt%， F e2〇3 (氧化鐵）〇 . 1〜15wt%，且剩餘成分中 A 1 6 S i 2 〇 ! 3 C模來石）爲最多之成分， (2) 八1?0‘！（正磷酸鋁）1 ,〇 〜25wt%， MnF e2〇4 (鐵素體）〇 , 1 〜I5wt%，Fe2〇3 C氧化鐵）〇 . 1〜1 5 w t %，剩餘成分中 A 1 eS i 2〇ι3 (模來石）爲最多之成分， 以該高電阻層作爲第一高電阻層，並於其上再形成以 S 1 〇2 (矽石）或A 1 2〇3 (氧化鋁）或s i 〇2 (矽石 )與CH3S i CM.5 (有機矽酸鹽）或A 12〇3 (氧化 鋁）與CH3S i Oi.5 (有機矽酸鹽）作爲主成分之非晶 質第二高電阻層， 該高電阻層之厚度爲1 0 〜1 mm者。 (請先聞讀背面之注意事項再填寫本頁) A. ,ιτ- 經濟部智慧財產局員工消費合作社印製 本紙張尺度適用中國國家橾隼（CNS ) Α4規格（2丨0X297公釐） -2 -A8 B8 C8 D8 466507 VI. Application for Patent Scope No. 89 1 06706 Patent Application Chinese Amendment of Patent Scope Amendment #Fill members to indicate the year < ^ > Month " > Intellectual Property Bureau of the Ministry of Economic Affairs Printed ff · Original Cooperative of Employee Consumer Cooperatives. Is there any change in the content of the congratulatory document? #I. Amended in August 1990 1. A voltage non-linear resistor, which is characterized by having a sintered body with zinc oxide as the main component, and a calendar non-linear resistor with a high resistance layer on the side of the sintered body. The high-resistance layer contains A 丨 P04 (aluminum orthophosphate) 1.0 to 2 5 wt%, F e 2 0 3 (iron oxide) ◦ ·] to 15 wt%, and A 1 6 S in the remaining components 1 20i 3 (mollite) is the most abundant component. 2. A voltage non-linear resistor comprising a sintered body with zinc oxide as a hafnium component and a voltage non-linear resistor with a high resistance layer on the side of the sintered body, wherein the high resistance layer contains A 1 P〇4 (aluminum orthophosphate) 1. 0 ~ 25 wt%, MnF e204 (ferrite) 0.1 ~ 1 5 wt%, Fe 2 0 3 (iron oxide) 0.1 ~ 1 5 wt%, Among the remaining components, A leS i 2〇i3 (mollite) is the most abundant component. 3. The voltage non-linear resistor according to item 1 or item 2 of the patent application scope, wherein the high-resistance layer is used as the first high-resistance layer, and S i 0 2 (silica) or A is further formed thereon. 1 2 Ο 3 (aluminum oxide) or S i〇2 (sandstone) with C Η 3 S 1 0 i "> (Organic Silicate) or A 1 2 0 3 (gasified aluminum) with c Η 3 S 1 0 i. 3 (organic silicate) as the second amorphous non-aqueous layer as the main component. 4. The voltage non-linear resistor such as the first or second item of the scope of patent application, wherein the high resistance The thickness of the layer is 1 〇β m ~ 1 m hi. This paper size is applicable to Chinese National Standard (CNS) A4 (210X297 mm) t Please read the notes on the back before filling in this education) A. Order 466507 A8 BS C8 D8 VI. Application for patent scope 5. A voltage non-linear resistor, which is characterized by having a sintered body with zinc oxide as the main component, and a voltage non-linear resistor with a high resistance layer on the side of the sintered body. The high-resistance layer contains the following components (1) or (2): (1) A1P0 < 1 (aluminum orthophosphate) 1.0 to 25 wt%, and Fe203 (iron oxide) 0.1 15% by weight, and the remaining components are A 1 6 S i 2 〇 3 C mollite), (2) 8 1 0 '! (Aluminum orthophosphate) 1, 0 ~ 25 wt%, MnF e2〇 4 (ferrite) 〇, 1 to 15 wt%, Fe2O3 C iron oxide) 0.1 to 15 wt%, A 1 eS i 2〇3 (mollite) in the remaining components is the most component, with The high-resistance layer is used as the first high-resistance layer, and S 1 〇2 (silica) or A 1 203 (alumina) or si 〇2 (silica) and CH3S i CM.5 are further formed thereon. (Organic silicate) or A 12〇3 (aluminum oxide) and CH3S i Oi.5 (organic silicate) as an amorphous second high-resistance layer, the thickness of the high-resistance layer is 10 to 1 mm. (Please read the precautions on the reverse side before filling out this page) A., ιτ- Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs This paper is printed in accordance with China National Standard (CNS) Α4 size (2 丨 0X297 Mm) -2-
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