JP6708093B2 - Resistor paste and resistor produced by firing the paste - Google Patents

Resistor paste and resistor produced by firing the paste Download PDF

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JP6708093B2
JP6708093B2 JP2016205989A JP2016205989A JP6708093B2 JP 6708093 B2 JP6708093 B2 JP 6708093B2 JP 2016205989 A JP2016205989 A JP 2016205989A JP 2016205989 A JP2016205989 A JP 2016205989A JP 6708093 B2 JP6708093 B2 JP 6708093B2
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resistor
paste
lead
resistance
firing
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JP2018067478A (en
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富士雄 幕田
富士雄 幕田
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Sumitomo Metal Mining Co Ltd
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Priority to KR1020197011628A priority patent/KR102384488B1/en
Priority to PCT/JP2017/037905 priority patent/WO2018074562A1/en
Priority to TW106136193A priority patent/TWI746670B/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
    • H01C17/06—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base
    • H01C17/065—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base by thick film techniques, e.g. serigraphy
    • H01C17/06506—Precursor compositions therefor, e.g. pastes, inks, glass frits
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
    • C03C8/24—Fusion seal compositions being frit compositions having non-frit additions, i.e. for use as seals between dissimilar materials, e.g. glass and metal; Glass solders
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00—Use of inorganic substances as compounding ingredients
    • C08K3/18—Oxygen-containing compounds, e.g. metal carbonyls
    • C08K3/20—Oxides; Hydroxides
    • C08K3/22—Oxides; Hydroxides of metals
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00—Use of inorganic substances as compounding ingredients
    • C08K3/40—Glass
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L101/00—Compositions of unspecified macromolecular compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/20—Conductive material dispersed in non-conductive organic material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
    • H01C17/06—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base
    • H01C17/065—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base by thick film techniques, e.g. serigraphy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
    • H01C17/06—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base
    • H01C17/065—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base by thick film techniques, e.g. serigraphy
    • H01C17/06506—Precursor compositions therefor, e.g. pastes, inks, glass frits
    • H01C17/06513—Precursor compositions therefor, e.g. pastes, inks, glass frits characterised by the resistive component
    • H01C17/06533—Precursor compositions therefor, e.g. pastes, inks, glass frits characterised by the resistive component composed of oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
    • H01C17/06—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base
    • H01C17/065—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base by thick film techniques, e.g. serigraphy
    • H01C17/06506—Precursor compositions therefor, e.g. pastes, inks, glass frits
    • H01C17/06573—Precursor compositions therefor, e.g. pastes, inks, glass frits characterised by the permanent binder
    • H01C17/06586—Precursor compositions therefor, e.g. pastes, inks, glass frits characterised by the permanent binder composed of organic material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material

Description

本発明は、厚膜チップ抵抗器やハイブリッドＩＣなどの抵抗体の材料として使用される抵抗ペースト、特に鉛を含有しない抵抗ペースト及びこれを焼成して作製される抵抗体に関するものである。 The present invention relates to a resistance paste used as a material for a resistor such as a thick film chip resistor or a hybrid IC, particularly a lead-free resistor paste and a resistor produced by firing the same.

従来、電子部品の抵抗体被膜を形成する方法としては、膜形成材料を含む抵抗ペーストを用いて成膜する厚膜方式と膜形成材料をスパッタリング等することで成膜する薄膜方式が一般的に知られている。それらのうち、厚膜方式は抵抗ペーストをセラミック基板上に印刷した後、焼成することで抵抗体を形成するものであり、この方法は成膜に必要な設備が安価で生産性も高いことから、チップ抵抗器やハイブリッドＩＣなどの電子部品が有する抵抗体の製造に広範に利用されている。 Conventionally, as a method of forming a resistor film of an electronic component, a thick film method of forming a film using a resistance paste containing a film forming material and a thin film method of forming a film by sputtering the film forming material are generally used. Are known. Among them, the thick film method is to form a resistor by printing a resistance paste on a ceramic substrate and then firing it.This method is inexpensive because of the equipment required for film formation and has high productivity. It is widely used for manufacturing resistors included in electronic components such as chip resistors and hybrid ICs.

上記の厚膜方式に用いる抵抗ペーストは、導電性粒子及びガラスフリット、並びにそれらを印刷に適したペースト状にするための有機ビヒクルから実質的に構成される。導電性粒子としては、二酸化ルテニウム（ＲｕＯ２）やパイロクロア型ルテニウム系酸化物（Ｐｂ２Ｒｕ２Ｏ７−Ｘ、Ｂｉ２Ｒｕ２Ｏ７）が一般に使われている。このように導電性粒子としてＲｕ系酸化物を用いるのは、主に導電性粒子の濃度に対して抵抗値がなだらかに変化するためである。 The resistive paste used in the thick film method is substantially composed of conductive particles and glass frit, and an organic vehicle for making them into a paste suitable for printing. As the conductive particles, ruthenium dioxide (RuO 2 ) or pyrochlore-type ruthenium oxide (Pb 2 Ru 2 O 7-X , Bi 2 Ru 2 O 7 ) is generally used. The reason why the Ru-based oxide is used as the conductive particles is that the resistance value changes gently with respect to the concentration of the conductive particles.

また、ガラスフリットとしては、ホウケイ酸鉛ガラス（ＰｂＯ−ＳｉＯ２−Ｂ２Ｏ３）やアルミノホウケイ酸鉛ガラス（ＰｂＯ−ＳｉＯ２−Ｂ２Ｏ３−Ａｌ２Ｏ３）など、鉛を多量に含むホウケイ酸鉛系ガラスが使われている。このようにガラスフリットにホウケイ酸鉛系ガラスを用いるのは、Ｒｕ系酸化物との濡れ性が良く、熱膨張係数が基板のそれに近く、焼成時の粘性などが適しているからである。 Further, as the glass frit, lead borosilicate glass (PbO-SiO 2 -B 2 O 3) or aluminum borosilicate lead glass (PbO-SiO 2 -B 2 O 3 -Al 2 O 3) , etc., a large amount of lead Lead borosilicate glass containing is used. The reason why lead borosilicate glass is used for the glass frit is that it has good wettability with Ru oxide, has a thermal expansion coefficient close to that of the substrate, and has a suitable viscosity during firing.

上記の抵抗ペーストでは、成膜後の抵抗体の特性を改善するため、各種添加剤を含有させることが昔から行われている。例えば特許文献１には、微細化された酸化ルテニウム粉末と、ＰｂＯを有するガラスと、酸化ニオブ（Ｎｂ２Ｏ５）とを不活性ビヒクルと共に混合して電気的特性に優れた厚膜抵抗体用の抵抗ペーストを作製する技術が開示されている。 In the above resistance paste, various additives have been included for a long time in order to improve the characteristics of the resistor after film formation. For example, Patent Document 1 discloses a fine-film ruthenium oxide powder, PbO-containing glass, and niobium oxide (Nb 2 O 5 ) mixed with an inert vehicle for a thick film resistor having excellent electrical characteristics. There is disclosed a technique for producing the above resistance paste.

特公昭６３−０３５０８１号公報Japanese Patent Publication No. 63-035081

しかしながら、添加剤としてＮｂ２Ｏ５を用いた場合には、少量の添加量で特性の向上が図れるが、抵抗値も大きく変わってしまうため、抵抗値の調整が難しいという問題点があった。また、近年、環境保護に配慮して電子部品では鉛フリー化が進められており、抵抗ペーストにおいても鉛フリー化が求められている。また、上記した抵抗ペーストを材料にして作製される電子部品等はますます小型化、高性能化する傾向にあり、これに伴い抵抗ペーストには抵抗値が高くかつ電流ノイズの小さい抵抗体を作製できるものが求められている。 However, when Nb 2 O 5 is used as an additive, the characteristics can be improved with a small amount of addition, but the resistance value also changes significantly, so there is a problem that it is difficult to adjust the resistance value. Further, in recent years, lead-free electronic components have been promoted in consideration of environmental protection, and lead-free electronic resistors are also required. In addition, electronic parts, etc. made from the above resistance pastes are becoming smaller and higher in performance, and as a result, resistance pastes with high resistance and small current noise are being made. What can be done is required.

本発明は上記の状況に鑑みてなされたものであり、高い抵抗値を有しながら電流ノイズを小さく抑えることが可能な電気的特性に優れた鉛フリーの厚膜抵抗体を形成することができる鉛フリーの抵抗ペーストを提供することを目的とする。 The present invention has been made in view of the above circumstances, and it is possible to form a lead-free thick film resistor having a high resistance value and excellent electrical characteristics capable of suppressing current noise to be small. It is intended to provide a lead-free resistance paste.

本発明者は、上記目的を達成可能な鉛フリーの抵抗ペーストについて検討を重ねた結果、抵抗ペーストに特定の添加剤を含有させることによって、導電性粒子にルテニウムを含む鉛フリーの酸化物を用いると共に、ガラスフリットにも鉛フリーのものを用いる場合であっても良好な電気的特性を有する抵抗体を作製できることを見出し、本発明を完成するに至った。 The present inventor has conducted extensive studies on a lead-free resistance paste that can achieve the above object, and by using a specific additive in the resistance paste, a lead-free oxide containing ruthenium is used for the conductive particles. At the same time, they have found that a resistor having good electrical characteristics can be manufactured even when a lead-free glass frit is used, and have completed the present invention.

即ち、本発明が提供する抵抗ペーストは、二酸化ルテニウムからなる導電性粒子と、鉛を含まないガラスフリットと、有機ビヒクルと、添加剤とで実質的に構成される抵抗ペーストであって、前記添加剤として比表面積６０ｍ２／ｇ以上１２５ｍ２／ｇ以下の非晶質シリカが５質量％以上１２質量％以下含まれていることを特徴としている。 That is, the resistance paste provided by the present invention is a resistance paste substantially composed of conductive particles made of ruthenium dioxide, a glass frit containing no lead, an organic vehicle, and an additive. The agent is characterized by containing 5% by mass or more and 12% by mass or less of amorphous silica having a specific surface area of 60 m 2 /g or more and 125 m 2 /g or less.

本発明によれば、鉛による環境汚染を引き起こすことなく、高い抵抗値を有しながら電流ノイズを小さく抑えることが可能な電気的特性に優れた厚膜抵抗体を作製できる抵抗ペーストを提供することができる。 According to the present invention, there is provided a resistance paste capable of producing a thick film resistor which has a high resistance value and can suppress a current noise to a small value without causing environmental pollution due to lead and which has excellent electrical characteristics. You can

以下、本発明の抵抗ペーストの実施形態について説明する。この本発明の実施形態の抵抗ペーストに用いる二酸化ルテニウムの形態については特に制限はなく、一般的な製法で得られる酸化物を使用することができる。ただし、焼成により形成される厚膜抵抗体の抵抗値のばらつきや電流ノイズをできるだけ抑えるため、当該厚膜抵抗体中の導電パスを微細にするのが望ましく、そのためには酸化物の粒子のＢＥＴ径による平均粒径は１.０μｍ以下であるのが望ましい。 Hereinafter, embodiments of the resistance paste of the present invention will be described. The form of ruthenium dioxide used in the resistance paste according to the embodiment of the present invention is not particularly limited, and an oxide obtained by a general manufacturing method can be used. However, in order to suppress variations in resistance value and current noise of the thick film resistor formed by firing as much as possible, it is desirable to make the conductive path in the thick film resistor fine, and for that purpose, the BET of oxide particles is used. It is desirable that the average particle diameter according to the diameter is 1.0 μm or less.

上記抵抗ペーストを構成するガラスフリットは、鉛を含まないものであれば特にその組成に制限はない。例えば、ホウケイ酸ガラス、アルミノホウケイ酸ガラス、ホウケイ酸アルカリ土類ガラス、ホウケイ酸アルカリガラス、ホウケイ酸亜鉛ガラス、ホウケイ酸ビスマスガラスなどを用いることができる。前述したように、厚膜抵抗体中の導電パスを微細にして該厚膜抵抗体の抵抗値のばらつきや電流ノイズをできるだけ抑えるため、ガラスフリットのレーザー回折式粒度分布測定によるＤ５０（メジアン径）は５μｍ以下であることが好ましい。 The composition of the glass frit forming the resistance paste is not particularly limited as long as it does not contain lead. For example, borosilicate glass, aluminoborosilicate glass, alkaline borosilicate glass, alkaline borosilicate glass, zinc borosilicate glass, bismuth borosilicate glass, or the like can be used. As described above, in order to minimize the variation of the resistance value of the thick film resistor and the current noise by making the conductive path in the thick film resistor fine, D50 (median diameter) by the laser diffraction type particle size distribution measurement of the glass frit is performed. Is preferably 5 μm or less.

上記抵抗ペーストを構成する有機ビヒクルは、抵抗ペーストに通常使用されているものであってよく、例えば、エチルセルロース、ブチラール、アクリルなどの樹脂をターピネオール、ブチルカルビトールアセテートなどの溶剤に溶解したものが好適に用いられる。 The organic vehicle that constitutes the resistance paste may be one commonly used in resistance pastes, for example, one in which a resin such as ethyl cellulose, butyral, or acrylic is dissolved in a solvent such as terpineol or butyl carbitol acetate is preferable. Used for.

上記抵抗ペーストは、更に添加剤として比表面積６０ｍ２／ｇ以上１２５ｍ２／ｇ以下の非晶質シリカを５質量％以上１２質量％以下含有している。非晶質シリカは、焼成により形成される抵抗体の抵抗値を上昇させて電流ノイズを小さくする働きを有している。非晶質シリカの比表面積を６０ｍ２／ｇ以上１２５ｍ２／ｇ以下に限定する理由は、比表面積が６０ｍ２／ｇ未満では電流ノイズ（ｄＢ）がマイナスになりにくく、逆に１２５ｍ２／ｇを超えると抵抗ペーストの粘度が高くなり過ぎて該抵抗ペーストの調製が困難になるからである。また、非晶質シリカの含有量を抵抗ペーストに対して５質量％以上１２質量％以下とするのは、５質量％未満では電流ノイズ（ｄＢ）がマイナスになりにくく、逆に１２質量％を超えても電流ノイズ（ｄＢ）がマイナスになりにくくなるからである。 The resistance paste further contains, as an additive, 5% by mass or more and 12% by mass or less of amorphous silica having a specific surface area of 60 m 2 /g or more and 125 m 2 /g or less. Amorphous silica has a function of increasing the resistance value of a resistor formed by firing and reducing current noise. The reason why the specific surface area of the amorphous silica is limited to 60 m 2 /g or more and 125 m 2 /g or less is that the current noise (dB) is less likely to become negative when the specific surface area is less than 60 m 2 /g, and conversely 125 m 2 /g. If it exceeds, the viscosity of the resistance paste becomes too high and it becomes difficult to prepare the resistance paste. Further, the content of the amorphous silica is set to be 5% by mass or more and 12% by mass or less with respect to the resistance paste. This is because the current noise (dB) is less likely to become negative even if it exceeds.

上記した本発明の実施形態の抵抗ペーストの製造法は特に制約がなく、ロールミルなどの市販の混練装置に、上記した抵抗ペーストの構成成分の所定量を秤量して装入し、混練することで作製することができる。その際、導電性粒子とガラスフリットの混合割合は、質量基準による導電性粒子／ガラスフリットの比で５／９５〜５０／５０程度であるのが好ましい。また、抵抗体の作製法も特に制約がなく、上記した本発明の実施形態の抵抗ペーストを材料として用いて従来と同様の方法で形成することができる。例えば、上記した抵抗ペーストをアルミナ基板などの通常の基板上にスクリーン印刷法などにより塗布し、乾燥した後、ベルト炉などを用いて８００〜９００℃程度のピーク温度で焼成することによって、鉛フリーの抵抗体を形成することができる。 The manufacturing method of the resistance paste of the embodiment of the present invention described above is not particularly limited, a commercially available kneading device such as a roll mill, weighs and charges a predetermined amount of the constituent components of the resistance paste described above, by kneading. It can be made. At that time, the mixing ratio of the conductive particles and the glass frit is preferably about 5/95 to 50/50 in terms of mass ratio of conductive particles/glass frit. The method for producing the resistor is not particularly limited, and the resistor paste of the embodiment of the present invention can be used as a material to be formed by a method similar to the conventional method. For example, the above-mentioned resistance paste is applied on a normal substrate such as an alumina substrate by a screen printing method or the like, dried, and then baked at a peak temperature of about 800 to 900° C. using a belt furnace or the like to obtain a lead-free material. Can form a resistor.

尚、本発明の実施形態の抵抗ペーストは、上記した必須成分の他に、厚膜抵抗体の電気的特性を調整するために従来から通常使用されている例えば分散剤、可塑剤などの種々の添加剤を必要に応じて添加してもよい。 In addition to the above-mentioned essential components, the resistance paste of the embodiment of the present invention includes various kinds of conventionally used dispersants, plasticizers and the like which are conventionally used for adjusting the electrical characteristics of thick film resistors. You may add an additive as needed.

導電性粒子、ガラスフリット、有機ビヒクル、及び添加剤を様々な配合割合で混合して複数の抵抗ペースト試料を調製し、それらを各々焼成することで厚膜抵抗体を形成し、その電気的特性について評価した。具体的には、導電性粒子には水酸化ルテニウムを焙焼することによって作製したＢＥＴ径４０ｎｍのＲｕＯ２粉末を用意した。ガラスフリットには一般的な方法で混合、溶融、急冷、粉砕することによって作製した１０質量％ＳｒＯ−４３質量％ＳｉＯ２−１６質量％Ｂ２Ｏ３−４質量％Ａｌ２Ｏ３−２０質量％ＺｎＯ−７質量％Ｎａ２Ｏの組成を有するレーザー回折式粒度分布測定によるＤ５０が１.９μｍのガラスフリットを用意した。 Conductive particles, glass frit, organic vehicle, and additives were mixed in various mixing ratios to prepare multiple resistance paste samples, and each was fired to form a thick film resistor, and its electrical characteristics. Was evaluated. Specifically, as the conductive particles, RuO 2 powder having a BET diameter of 40 nm prepared by roasting ruthenium hydroxide was prepared. For the glass frit, 10 mass% SrO-43 mass% SiO 2 -16 mass% B 2 O 3 -4 mass% Al 2 O 3 -20 mass prepared by mixing, melting, quenching, and pulverizing by a general method. A glass frit having a composition of %ZnO-7 mass% Na 2 O and a D50 of 1.9 μm measured by a laser diffraction particle size distribution was prepared.

添加剤には比表面積がそれぞれ３ｍ２／ｇ、３０ｍ２／ｇ、６０ｍ２／ｇ、８０ｍ２／ｇ、及び１２５ｍ２／ｇの５種類の非晶質ＳｉＯ２を用意し、有機ビヒクルにはエチルセルロースとターピネオールを主成分とするものを用意した。これらＲｕＯ２粉末、ガラスフリット、添加剤、及び有機ビヒクルを様々な配合割合となるように秤量し、三本ロールミルで混練した。これにより試料１〜１７の抵抗ペーストを作製した。 Five kinds of amorphous SiO 2 having specific surface areas of 3 m 2 /g, 30 m 2 /g, 60 m 2 /g, 80 m 2 /g, and 125 m 2 /g were prepared as additives, and for the organic vehicle, A material containing ethyl cellulose and terpineol as main components was prepared. The RuO 2 powder, glass frit, additive, and organic vehicle were weighed so as to have various compounding ratios, and kneaded with a three-roll mill. Thereby, resistance pastes of Samples 1 to 17 were produced.

次に、各試料の抵抗ペーストに対して、ＡｇＰｄペーストを用いて電極間距離１ｍｍの２つの電極が形成されたアルミナ基板を用意し、該アルミナ基板上において上記両電極を接続するように抵抗ペーストを幅１ｍｍにスクリ−ン印刷し、１５０℃で１０分間乾燥した後、ベルト炉にてピーク温度８５０℃で９分間焼成した。このようにして作製した厚膜抵抗体の電気的特性（抵抗値、電流ノイズ）を測定した。抵抗ペーストの組成と各ペーストによって得られた抵抗体の特性を下記表１に示す。尚、抵抗値はＫＥＩＴＨＬＥＹ社製のＭｏｄｅｌ２００１Ｍｕｌｔｉｍｅｔｅｒを用いて４端子法にて測定し、電流ノイズはＱｕａｎ−Ｔｅｃｈ社製のノイズメーターＭｏｄｅｌ３１５Ｃを用いて１／１０Ｗ印加で測定した。 Next, with respect to the resistance paste of each sample, an alumina substrate on which two electrodes having an inter-electrode distance of 1 mm are formed using AgPd paste is prepared, and the resistance paste is connected on the alumina substrate so as to connect the both electrodes. Was screen printed to a width of 1 mm, dried at 150° C. for 10 minutes, and then baked in a belt furnace at a peak temperature of 850° C. for 9 minutes. The electrical characteristics (resistance value, current noise) of the thick film resistor thus manufactured were measured. The composition of the resistance paste and the characteristics of the resistors obtained by each paste are shown in Table 1 below. The resistance value was measured by the 4-terminal method using Model 2001 Multimeter manufactured by KEITHLEY, and the current noise was measured by applying 1/10 W using a noise meter Model 315C manufactured by Quan-Tech.

Figure 0006708093
Figure 0006708093

上記表１から分かるように、安価なＲｕＯ２からなる導電性粒子と鉛フリーのガラスフリットとを用いて厚膜抵抗体を形成した場合においても、添加剤として比表面積６０ｍ２／ｇ以上１２５ｍ２／ｇ以下の非晶質ＳｉＯ２を本発明が規定する範囲内で添加することによって、非晶質ＳｉＯ２を加えない場合や本発明の要件の満たさない態様で非晶質ＳｉＯ２を添加する場合に比べて電流ノイズを小さくできることが分かる。


As can be seen from Table 1 above, even when a thick film resistor is formed using conductive particles made of inexpensive RuO 2 and lead-free glass frit, a specific surface area of 60 m 2 /g or more and 125 m 2 or more as an additive. / by g or less amorphous SiO 2 is present invention is added in a range defined, the addition of amorphous SiO 2 in a manner that does not meet the requirements for and the present invention without added amorphous SiO 2 It can be seen that the current noise can be reduced compared to the case.


Claims (4)

二酸化ルテニウムからなる導電性粒子と、鉛を含まないガラスフリットと、有機ビヒクルと、添加剤とで実質的に構成される抵抗ペーストであって、前記添加剤として比表面積６０ｍ２／ｇ以上１２５ｍ２／ｇ以下の非晶質シリカが５質量％以上１２質量％以下含まれていることを特徴とする抵抗ペースト。 A resistance paste substantially composed of conductive particles made of ruthenium dioxide, a glass frit containing no lead, an organic vehicle, and an additive, wherein the additive has a specific surface area of 60 m 2 /g or more and 125 m 2 or more. /G or less of amorphous silica is contained in an amount of 5% by mass or more and 12% by mass or less. 請求項１に記載の抵抗ペーストを焼成してなる鉛フリーの抵抗体。 A lead-free resistor obtained by firing the resistance paste according to claim 1. 請求項２に記載の抵抗体を有することを特徴とする電子部品。 An electronic component comprising the resistor according to claim 2. 請求項１に記載の抵抗ペーストを焼成することで抵抗体を作製することを特徴とする鉛フリーの抵抗体の製造方法。


A method for producing a lead-free resistor, comprising: producing a resistor by firing the resistor paste according to claim 1.


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