TW463260B - An improved method for etching TiN and SiO2 materials at the same rate - Google Patents
An improved method for etching TiN and SiO2 materials at the same rate Download PDFInfo
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- TW463260B TW463260B TW089112734A TW89112734A TW463260B TW 463260 B TW463260 B TW 463260B TW 089112734 A TW089112734 A TW 089112734A TW 89112734 A TW89112734 A TW 89112734A TW 463260 B TW463260 B TW 463260B
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title claims abstract description 52
- 238000000034 method Methods 0.000 title claims abstract description 45
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 title claims abstract description 38
- 229910052681 coesite Inorganic materials 0.000 title claims abstract description 38
- 229910052906 cristobalite Inorganic materials 0.000 title claims abstract description 38
- 229910052682 stishovite Inorganic materials 0.000 title claims abstract description 38
- 229910052905 tridymite Inorganic materials 0.000 title claims abstract description 38
- 238000005530 etching Methods 0.000 title claims abstract description 26
- 239000000377 silicon dioxide Substances 0.000 title claims abstract description 14
- 235000012239 silicon dioxide Nutrition 0.000 title claims abstract description 14
- 239000000463 material Substances 0.000 title abstract description 16
- 239000002184 metal Substances 0.000 claims abstract description 45
- 229910052751 metal Inorganic materials 0.000 claims abstract description 45
- 239000001307 helium Substances 0.000 claims abstract description 14
- 229910052734 helium Inorganic materials 0.000 claims abstract description 14
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims abstract description 14
- 239000007789 gas Substances 0.000 claims abstract description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 5
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 5
- 239000010703 silicon Substances 0.000 claims abstract description 5
- 229910052718 tin Inorganic materials 0.000 claims description 35
- 239000000126 substance Substances 0.000 claims description 26
- 238000001816 cooling Methods 0.000 claims description 9
- 238000002161 passivation Methods 0.000 claims description 7
- 238000011049 filling Methods 0.000 claims description 5
- 239000004065 semiconductor Substances 0.000 claims description 5
- 229910018182 Al—Cu Inorganic materials 0.000 claims description 4
- 230000000873 masking effect Effects 0.000 claims description 4
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 3
- 230000002079 cooperative effect Effects 0.000 claims description 2
- 238000000151 deposition Methods 0.000 claims description 2
- 238000009413 insulation Methods 0.000 claims description 2
- 239000010410 layer Substances 0.000 claims 19
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims 1
- 239000012792 core layer Substances 0.000 claims 1
- 230000005611 electricity Effects 0.000 claims 1
- 229910052733 gallium Inorganic materials 0.000 claims 1
- 239000010985 leather Substances 0.000 claims 1
- 238000004064 recycling Methods 0.000 claims 1
- 229920000642 polymer Polymers 0.000 abstract description 8
- 239000006227 byproduct Substances 0.000 abstract description 4
- 235000012431 wafers Nutrition 0.000 description 21
- 230000015572 biosynthetic process Effects 0.000 description 10
- 239000004020 conductor Substances 0.000 description 7
- 229910052581 Si3N4 Inorganic materials 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- XPDWGBQVDMORPB-UHFFFAOYSA-N Fluoroform Chemical compound FC(F)F XPDWGBQVDMORPB-UHFFFAOYSA-N 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 4
- 238000001465 metallisation Methods 0.000 description 3
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
- 239000005380 borophosphosilicate glass Substances 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- WPPDFTBPZNZZRP-UHFFFAOYSA-N aluminum copper Chemical compound [Al].[Cu] WPPDFTBPZNZZRP-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000003749 cleanliness Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000012809 cooling fluid Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 210000005069 ears Anatomy 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 150000002466 imines Chemical class 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 239000010977 jade Substances 0.000 description 1
- 238000004898 kneading Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000008267 milk Substances 0.000 description 1
- 210000004080 milk Anatomy 0.000 description 1
- 235000013336 milk Nutrition 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
Classifications
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- H01—ELECTRIC ELEMENTS
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
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- H01L23/525—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections
- H01L23/5256—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections comprising fuses, i.e. connections having their state changed from conductive to non-conductive
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- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
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- H01L2924/049—Nitrides composed of metals from groups of the periodic table
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- H01L2924/04941—TiN
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- Plasma & Fusion (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Semiconductor Memories (AREA)
- Drying Of Semiconductors (AREA)
Description
463260 ---- '丨 2734號專利申請案 明書修正頁(90年9月) A7 B7 p 7 ^ /8 1 _供[ 五、發明説明( 發明領域 .j笨發明有關製造半導體積體電路(ICs)之方法,尤其是有 在碎晶圓之部分結構中以實質上相同速率蝕刻丁^和si〇2 物質之方法。此方法非常乾淨且發現在技術文獻中稱為,,終 極孔洞(terminal vias) ”之開口中形成電連接之應用上非常有 價值。 發明背景 在製造半導體積體電路且尤其是動態隨機存取記憶 (DRAM)晶片中,廣泛使用終極孔洞。如本技藝者悉知,晶 圓加工最終步驟係形成特定孔洞穿孔,俗稱為終極孔洞 (TVs)及接線連接以使晶片中整合之裝置連接至外部世界。 終極孔洞形成步驟(後文稱為TV形成製程)將參考圖丨至4 說明。圖1圖示顯示結構1 〇,其代表在形成終極孔洞之製造 階段矽晶圓部分(重要地指出該說明未必照比例繪製)a現 參考圖1,最初結構1 0實質上由埋有三個金屬層(分別表示 為閘極導體(GC) 1 2、第一級金屬化(μ 1)之導地物1 3及第 二級金屬化(M2)之接觸墊1 4)之介電絕緣層丨1所構成。一 般1介電層1 1係由兩部分所構成:BPSG/TEOS Si02物質之 底層1 1 A及純Si〇2物質之頂層1 1 B。如圖1所見,藉堆疊三 個金屬層14A、14B及14C而形成M2金屬整14。一般,中 心部分1 4 A係由夾於飲/氮化鈥(Ti/ΉΝ)雙層14B及MC間 之銘/銅(Al/Cu)合金所製成。然而,圖1所示之階段中,形 成雙頂層1 4 B之物質實際上為ΉΝ » 現參考圖2 ’分別為Si〇2及Si#4物質之鈍化層15及16藉 本泜張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐) 4 6 3 2 6 Ο 第89丨12734號專利申請案 中文說明書修正頁(90年9月) A7 ________ B7 五、發明説明(2 ) PECVD圍包;殿積在結構10上。此步驟後接著旋敷澱積光醯 亞胺(photoimide)層17 »結果,形成由該三層所構成之堆疊 ’用以保護包裝步驟期間或之後之晶片上表面。 現參考圖3 ’依標準曝露、烘烤光醯亞胺物質層17並使其 顯影’而產生亦稱為17之光罩。光罩17隨後用以使位於分 別稱為丨8及1 9之熔絲(fuse)及金屬m2墊14上隔距之Si3N4 及Si〇2底層1 6及丨5形成圖案。熔絲廣泛用於DRAM晶片以 使失敗之記憶元件失效.事實上,控制失敗記憶元件之熔 絲燃燒》本例中,熔絲與閘極導體丨2同時形成。 現在’ Si3N4、Si02及TiN物質層16、15及14B使用光罩 1 7蚀刻成所需圈形。在熔絲與閘極莩體丨2同時形成且埋在 厚介電層丨1底下之DRAM晶片製造中,τν形成製成之目標 係曝露M2金屬墊中心部分丨4 A而不完全移除深埋在結構j 〇 中之閘極導體/熔絲1 2上之介電物質層1 1。 蝕刻係在ΑΜΕ 5000 RIE蝕刻器(由美國CA聖卡羅之 Applied Materials,銷售之反應器)之室中使用 Ch/CHF3化學品進行。依標準,晶圓置於藉氦(He)流動冷 卻之反應器靜電卡盤上。宜用下列操作條件。 CF4 流速 :60sccm CHF3 流速 :10 seem 鼠流速 · 100 sccm
壓力 :40 mT 溫度陰極/壁 :1 5 /1 5。(3 H e背部冷卻 :1 4拖耳
本紙法尺度適用中國國家揉率(CNS) A4规格(210 X 297公D 46 32 6 0 第89112734號專利申請案 中文說明書修正頁(9〇年9月) A7 - ----------B7 五、發明説明(^~) " 電力 :1000瓦 藉光學分光計偵測之387.5照射(CN)強度之急遽降低而測 疋蝕刻終點。在τ v形成製程之此階段,最終結構示於圖4 。上述終端孔洞蝕刻步驟(後文稱為TV蝕刻步驟)可氣好操 作’但當以非常快速弄髒反應器之CHF3蝕刻時,其與可產 生多種聚合物副產物之光醯亞胺光罩有關。 圖5顯示圖4結構1〇之上視圖,一方面說明M2金屬替η 之相對殿積及另一方面說明其内所含之分別稱為2 〇及2丨之 熔絲隔距及個別熔絲β 下表1概述上述CF4/ CHF3為主之化學品Τνϋ刻步驟之基 本特徵。 表1 275 nm/分鐘 1.7% 11 有 介電蚀刻速率 介電蝕刻均勻度 Si02 : TiN選擇率 聚合物堆積 近來’設計出具有不同植入之新一代64 Mbits DRAM晶片 以增加裝置密度整合性。現在,在第一級金屬化(Ml)製造 熔絲且因此更接近於結構1 0上表面。此新設計示於圖6。圖 6中,表示為1 〇 ’之起始結構相當類似於圖1之結構1 〇,但 熔絲不再與閘極導體1 2 —起製造而與Μ 1金屬接地物1 3 — 起製造。典型上,Si02層11Β厚度等於450毫微来及TiN層 14B厚度為35毫微米。 因此,曝露M2金屬墊中心部分14A而不移除Ml金屬接 本紙張尺度適用中a a家標準(CNS) A4规格(210X 297公釐) 463260 第89112734號專利申請案 中文說明書修正頁(9〇年9月) 会7 ^__ B7 五、發明説明(4~) 地物/熔絲1 3上之介電物質之目標變得比以往更重要且困難 。不幸地’上述T V形成製程由於無法良好控制特定τ V蝕 刻步驟而無法符合此目標。實際上,習知T V形成製程結束 時’由於TV蚀刻步驟控制不良’因此所得結構反而為圖7A 或圖7 B所示之結構〇 圖7 A顯示其中Ml金屬接地物/熔絲1 3未曝露於開口〗8中 ,但有些許殘留於開口 1 9中Μ 2金屬墊中心部分1 4 A頂端之 TiN物質層1 4 β,係由於此物質未完全移除之故。結果,增 加Μ 2金屬墊中心部分1 4 Α之接觸抗性。 相反地’圖7 B顯示開口 1 9中之所有TiN物質層1 4 B完全 移除,但Μ 1金屬接地物/熔絲1 3現在曝露於開口 1 8中,其 為金屬腐蝕及污染問題之潛在來源。 因此,對此新一代之DRAM晶片而言,由於有三個主要問 題,因此上述TV蝕刻步驟明顯不適宜。 1‘如上所述,若在M2金屬塾中心部分14A仍留有些許TiN 物質殘留時,發生些許接觸抗性之問題。 2 .若保護該金屬接地物/熔絲1 3之所有Si02物質層1 1 B被蝕 刻,則反而有金屬腐蝕及污染問題。 3.最後,在反應器内產生聚合物副產物而引起工具可用時 問之問題。 顯然,與CF4-CHF3為主之化學品相關之習知TV形成製程 之上述TV蝕刻步驟不再適用於圖6之結構10’。 其他以氯為主之氣體如Cl2、HC1或BC13則相當適用於蝕刻 與Si02相關選擇之TiN物質,但其可相當快速蚀刻鋁-銅, 本紙法足度適闵中闺S家搮準(CNS) A4规格(210 X 297公釐) 4ό326 Ο Λ6326 Ο Α7 Β7_____ 五、發明說明(5 ) 因此使用此氣體,將嚴重侵襲Μ 2金屬墊中心部分1 4 Α 因此,迄今,仍高度需求可蝕刻形成M2金屬墊14之TiN 物質而未完全移除Μ 1金屬接地物/熔絲1 3上之Si〇2物質且 乾淨之製程。 發明概述 因此本發明主要目的係提供以實質上相同速率蝕刻TiN及 Si02物質之改良方法- 本發明另一目的係提供一種在TV形成製程中可蝕刻M2金 屬墊之TiN外層而不曝露Μ 1金屬接地物/熔絲而以實質上相 同速率!虫刻TiN及Si〇2物質之改良方法。 本發明又一目的係提供一種不會產生聚合物副產物之乾淨 製程而以實質上相同速率蝕刻TiN及Si02物質之改良方法。 依據本發明’描述一種以實質上相同速率蝕刻TiN及Si02 物質之改良方法,包括下列步驟: 提供一種為矽晶圓之部分之結構,該結構包括金屬底層 及其上开;}成有金屬塾之絕緣Si〇2頂層’其中該金屬誓係由 覆蓋Al-Cu層之TiN層所構成;及 將晶圓置於RIE蝕刻器真空室之靜電卡盤上,對其施加低 於400 W之電力且與大於4〇 sccm<NF3氣流接觸因此以〇2 : TiN選擇率等於約4» _ 依據本發明义另一特徵,描述一種在半導體結構中形成 終極孔洞(TV)之方法,包括下列步驟: 提供-種切晶圓之部分之結構,該結構包括金屬底層 及其上形成有金屬替之絕緣Si02頂層,其中該金屬整係由
本紙張反度適用令國國象標準(CNS)A4規格(2KJ (請先閱讀背面之注意事項再填寫本頁)
· I---r 11 * 11 I ---I I I 經濟部智慧財產局員工消費合作社印製 297公釐) 463260 A7
五、發明說明(6 ) 經濟部智慧財產局WC工消费合作社印製 覆蓋Al-Cu層之TiN層所構成; 藉PECVD依序在結構上澱積si〇2薄鈍化層及之厚鈍 化層; 在結構上形成所需圖形之遮蔽層; 以CFJNF3化學品使用該遮蔽層蝕刻該層以曝露該 Si〇2底下層;及 以NFS化學品蝕刻Si〇2層及TiN層,以完全移除金屬墊上 之TiN層而產生終極孔洞,同時不曝露該金屬底層,其中此 步驟係將晶圓置於RIE蝕刻器真空室之靜電卡盤上,對其施 加低於400 W之電力且與大於40 sccm<NF3氣流接觸因此 Si02 : TiN選擇率約等於4。 依據本發明又一明顯特徵,一般用以冷卻置於靜電卡盤 上之晶圓之氦氣體壓力儘可能降低而增加晶圓溫度,以達 成取低之Si〇2 · TiN選擇率,如約等於2。 本發明之新穎特徵述於申請專利範圍中。但本發明本身 以及其他目的及優點可參考下列較佳具體例之詳細說明及 參考附圖而更明瞭。 圖示簡單說明 圖1至4顯示經由習知終極孔洞(τν)形成製程之基本步驟 之半導體结構。 圖5顯示圖4階段中之結構10以顯示Μ2整及溶絲隔距之相 對澱積》 圖6顯示圖1中略修飾之结構1〇,其中熔絲與第一級金屬 化之金屬接地物一起製造。 本紙張尺度適用中國國家標準(CNS)A4規格(21〇χ2¥&^Ϊ· -----1 I 1 I i ---I - — III·--I — — — 1. (請先閱讀背面之注意事項再填寫本頁) 463260 第89112734號專利申請案 中文說明書修正頁(90年9月) A7 ---- --—____ B7 五、發明説明(7 ) 圖7A及7.B顯示圖從π 只丁 B) 0 了獲得之结構,但由於其不良控制 而需使用習知T V形成釗奶.r m r r , /成I程之利用C F 4 / c H F 3化學品之 蝕刻步驟a 品接 程最 圖8及9顯示圖6經歷本發明之先以nf3/cf4化與 著以N F 3化學品之兩步驟製程之該改良τ v = 終步驟之結構。 & 元件符號說明 10 結構 1 0' 結構 1.1 介電絕緣層 1IA 底層(BPSG/TEOS Si〇2 層) 1 1 B 頂層(純S i 〇 2層) 12 閘極導體 1 3 導地物 14 接觸墊 14A 金屬潛(中心部分) 1 4B 金屬層(TiN層) 1 4C 金屬層 15 鈍化層(S i 0 2層) 16 鈍化層(Si3N4層) 17 光醯亞胺層(光罩) 1 8 熔絲(開口) 19 熔絲(開口) 2 0 熔絲隔距 10- 本紙張尺度適用中國國家梯準(CNS) A4規格(210 X 297公*) 463260 第89112734號專利申請案 中文說明書修正頁(90年9月) 五、發明説明(7a ) 個別熔絲 較佳具體例詳細說明 現在說明改良之終極孔洞(T V )形成製程β圖6之結構 10以Si02、Si3N4及光醯亞胺物質之重疊層15 ' 16及 17包覆且光醯亞胺層17如參考圖2及3所述般曝露及顯 影形成光罩1 7。 此新穎T V蝕刻製程以N F 3為主之化學品在高晶圓溫度 下分兩步驟進行’而更快速移除T iN物質及對圖形效應 因素更不敏感。該兩步驟在前述總集束(clusterized) 製程之ΑΜΕ 5000 RIE蚀刻器之相同mxP +室中進行。 第一步驟中使用C FWNF 3化學品以下列操作條件蝕刻 S i 3 N 4物質層1 6 : S i 3 N 4蚀刻
N F 3流速 :80 seem C F 4流速 :4 0 seem 壓力 :150 mT 溫度陽極/壁 :1 5 / 1 5 °C 氦冷卻壓力 :1 4拖耳 電力 :1000 W 藉由光學分光計偵測之4 8 3毫微米(C 0)輻射強度之急遽增 加定義蝕刻終點。所得結構示於圖8。由圖8顯見,薄Si02 -1〇3 - 本紙張尺度逋用t國a家揉準(CNS) A4规格(210X 297公釐) 經濟部智慧財產局員工消費合作社印製 463260 A7 r—------- B7 五、發明說明(3 ) 純化層15曝露於開口 18及μ中。 現在’在第二步驟中,以〇2層15、TiN層14B及Si〇2層 1 1 B於相同室中蝕刻但使用NF 3化學品及下列操作條件: 丁iN及Si〇2<|虫刻 NF3/瓦速 :5 0 seem
壓力 :5 0 mT 溫度陽極/壁 :1 5 /1 5。〇 氦冷卻壓力 :2拖耳
電力 :400 W ΤιΝ及SiC^實質上在相同速率蝕刻(選廣率等於2 )。選擇 NFS氣體因為其具有以如氮化矽(其更易化學性蝕刻)之物質 向敍刻速率之故,因此適合作為上述兩步驟蝕刻之主要化 合物。意外地,其呈現高TiN蝕刻速率而對Si02蝕刻速率無 不利影響。此外,無聚合物產生而為乾淨製程,因此可加 工大量晶圓批次而不需為了清洗而停止ΚΙΕ反應器β 再者’意外地發現有利於最高可能之晶圓溫度而獲得最 小可能之選擇性。典型上’宜使用高於1 〇〇°C之晶圓溫度。 此可藉明顯降低冷卻流體流動而簡單獲得,如由2拖耳壓力 之上述氦晶圓背侧冷卻壓力而非如步驟I所示之1 4拖耳壓力 可看出。當電力低於500 W、NF3流速大於40 seem及氦背側 冷卻壓力為14拖耳時’步驟2之選擇率約等於4且不會降低 。2拖耳之值可獲得有利之選擇率2 (此例中晶圓溫度評估約 等於 150°C)。 最後,可注意到Si〇2蝕刻均勻度自17明顯改良至〇· 7%。 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公爱) -----------t I ---Lfl·— — — 訂 *--------_ (諳先閱讀背面之注意事項再填寫本頁). 463260 128 nm/分鐘 0.7% 2 益 無 A7 B7 玉、發明說明(9 ) 最終結構示於圖9。由圖9顯見,充分量之絕緣層1 1 B留 在Μ I接地物/熔絲1 3上同時移除所有TiN物質層1 4 B。 下表Π概述本發明τν蝕刻製程之改良NF3S主之化學品基 本特性。
表II
Si〇2姓刻速率 Si〇2蝕刻均句度 Si02:TiN選擇率 聚合物增加 TiN殘留 聚合物未增加證明此新穎T V蝕刻步驟之乾淨性。 雖然本發明特別有關其較佳具體例加以說明,但熟知本 技蟄者須了解樣態及細節之前述及其他變化在不達離本發 明精神及範圍内可加以變化a (請先閱讀背面之注意事項再填寫本頁) I ---^---r,---訂 *--------- 經濟部智慧財產局員工消t合作杜印製 2 本紙張尺度適用中關家標準(CNS)A4規石21(] χ 297公爱)
Claims (1)
- 經濟部智慧財產局員工湞費合作社印製 463260 六、申請專利範圍 1 _ 一種以實質上相同速率蝕刻TiN及Si〇2物質之方法,包括 下列步驟: 提供一種為矽晶圓之部分之結構,該結構包括金屬底 層及其上形成有金屬墊之絕緣Si〇2頂層,其中該金屬塾 係由覆蓋Al-Cu層之TiN層所構成:及 將晶圓置於RIE蝕刻器真空室之靜電卡盤上,對其施 加低於400 W之電力且與大於4〇 sccm之ΝΪ?3氣流接觸,因 此Si02: TiN選擇率等於約4。 2 .根據申請專利範圍第1項之方法,其中一般用以冷卻置 於靜電卡盤上之晶圓之氦氣體壓力儘可能降低而增加晶 圓溫度’以達成最低之選擇率3 3 根據申清專利範圍第2項之方法,其中氦冷卻壓力等於2 拖耳,因而Si02: TiN選擇率等於約2。 4 '根據申請專利範圍第3項之方法,其中晶圓溫度高於1 〇〇 。(:。 5 *根據申請專利範圍第2項之方法,其中真空室為ΑΜΕ 5000 RIE蝕刻器之μχΡ +室。 6 ·根據申請專利範圍第5项之方法,其中RIE步驟係在下列 操作條件下進行: NF;流速 :50 seem 壓力 :50 mT 溫度 1%極/壁 :1 5 /1 5 氦冷卻壓力 :2拖耳 電力 :400 V/。 (請先閱讀背面之注意事項再填寫本頁) ,*暴---------訂---------線— 本紙張尺度適用中S ®私標革(CMS)A4規格(21〇 297公釐) 經濟部智慧財產局員工消費合作ί£印 4 6326 〇 A8 B8六、申請專利範圍 ’—種在半導體結構中形成終極孔洞(T V)之方法,包括下 列步驟: 提供一種為矽晶圓之部分之結構’該結構包括金屬底 層及其上形成有金屬墊之絕緣Si02頂層,其中該金屬墊 係由覆蓋Al-Cu層之TiN層所構成; 藉PECVD依序在結構上澱積Si〇2薄鈍化層及^Ν4之厚 鈍化層; 在結構上形成所需圖形之遮蔽層; 以CFJNF3化學品使用該遮蔽層蝕刻該叫心層,以曝 露遠Si02底下層;及 以NF3化學品蝕刻Si〇2層及TiN層,以完全移除金屬墊 上之TiN層而產生終極孔洞,同時不曝露該金屬底層。 8 ·根據申請專利範圍第7項之方法’其中晶圓置於rIE蝕刻 器真空室之靜電卡盤上,對其施加低於4〇〇 W之電力且 與大於40 seem之NF3氣流接觸,因此Si〇2:TiN選擇率等 於約4 » 9 .根據申請專利範圍第8項之方法,其中一般用以冷卻置 於靜電卡盤上之晶圓之氦氣體壓力儘可能降低而增加晶 圓溫度’以達成最低之選擇率。 1 〇 .根據_請專利範圍第7項之方法,其中形成遮蔽層之該 步驟包括下列步驟: 澱積光醯亞胺層; 曝露至該所需圖形;及 使該光醯亞胺層顯影。 ____ -14- 本纸張又度適用十S國家標準(CNS)A4_^"(21〇x 297 &g^ —'I I J < I I I I I I 4^ « I t I I I I _ -----Ϊ ! I I · !, (請先閲讀背面之注意事項再填寫本頁) 463260 ASB8C8D8 六、申請專利範圍 1 1.根據申請專利範圍第9項之方法,其中蝕刻該si3N4物質 之該步驟係在ΑΜΕ 5000 RIE蝕刻器之MXP+室以下列條件 操作: 80 seem 40 seem 150 mT 1 5 /1 5 °C 14拖耳 1000 w 〇 1 2 .根據申請專利範圍第1 1項之方法,其中蝕刻該TiN及 Si〇2物質之該步驟係在用於總集束製程之άμε 5000 RIE 蝕刻器之相同ΜΧΡ+室以下列條件操作: NF 3流速 CF4流速 壓力 溫度陽極/壁 氦冷卻壓力 電力 nf3流速 墼力 溫度陽極/壁 氦冷卻壓力 電力 50 seem 50 mT 1 5 /1 5 °C 2拖耳 400 W。 1 3 ·根據申請專利範圍第7項之方法 熔絲。 其中該金屬底層包括 (请先閱讀背面之iit事項再填寫本頁) ---------訂--------- . 經濟部智慧財產局員工消費合作社印製 -15 冬紙過用中园國家螵準(CNS)rVl規恪(210 X 297公爱)
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US5550399A (en) * | 1994-11-03 | 1996-08-27 | Kabushiki Kaisha Toshiba | Integrated circuit with windowed fuse element and contact pad |
JP3440599B2 (ja) * | 1995-01-24 | 2003-08-25 | 松下電器産業株式会社 | ビアホール形成方法 |
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FR2796492A1 (fr) | 2001-01-19 |
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