TW440897B - Method for producing contact structures - Google Patents

Method for producing contact structures Download PDF

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Publication number
TW440897B
TW440897B TW088120847A TW88120847A TW440897B TW 440897 B TW440897 B TW 440897B TW 088120847 A TW088120847 A TW 088120847A TW 88120847 A TW88120847 A TW 88120847A TW 440897 B TW440897 B TW 440897B
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Taiwan
Prior art keywords
contact structure
layer
contact
patent application
scope
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TW088120847A
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Chinese (zh)
Inventor
Theodore A Khoury
Mark R Jones
James W Frame
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Advantest Corp
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Priority claimed from US09/201,299 external-priority patent/US6297164B1/en
Priority claimed from US09/222,176 external-priority patent/US5989994A/en
Application filed by Advantest Corp filed Critical Advantest Corp
Application granted granted Critical
Publication of TW440897B publication Critical patent/TW440897B/en

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
    • G01R1/02—General constructional details
    • G01R1/06—Measuring leads; Measuring probes
    • G01R1/067—Measuring probes
    • G01R1/06711—Probe needles; Cantilever beams; "Bump" contacts; Replaceable probe pins
    • G01R1/06733—Geometry aspects
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
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    • G01R1/02—General constructional details
    • G01R1/06—Measuring leads; Measuring probes
    • G01R1/067—Measuring probes
    • G01R1/06711—Probe needles; Cantilever beams; "Bump" contacts; Replaceable probe pins
    • G01R1/06733—Geometry aspects
    • G01R1/06744—Microprobes, i.e. having dimensions as IC details
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    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H—ELECTRICITY
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    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L24/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H—ELECTRICITY
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    • H01R—ELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
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    • H01R13/02—Contact members
    • H01R13/22—Contacts for co-operating by abutting
    • H01R13/24—Contacts for co-operating by abutting resilient; resiliently-mounted
    • H01R13/2407—Contacts for co-operating by abutting resilient; resiliently-mounted characterized by the resilient means
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    • H01R—ELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
    • H01R13/00—Details of coupling devices of the kinds covered by groups H01R12/70 or H01R24/00 - H01R33/00
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    • H01R13/24—Contacts for co-operating by abutting resilient; resiliently-mounted
    • H01R13/2464—Contacts for co-operating by abutting resilient; resiliently-mounted characterized by the contact point
    • G—PHYSICS
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    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
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    • G01R1/067—Measuring probes
    • G01R1/073—Multiple probes
    • G01R1/07307—Multiple probes with individual probe elements, e.g. needles, cantilever beams or bump contacts, fixed in relation to each other, e.g. bed of nails fixture or probe card
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R3/00—Apparatus or processes specially adapted for the manufacture or maintenance of measuring instruments, e.g. of probe tips
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
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    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
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    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
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    • H01R—ELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
    • H01R12/00—Structural associations of a plurality of mutually-insulated electrical connecting elements, specially adapted for printed circuits, e.g. printed circuit boards [PCB], flat or ribbon cables, or like generally planar structures, e.g. terminal strips, terminal blocks; Coupling devices specially adapted for printed circuits, flat or ribbon cables, or like generally planar structures; Terminals specially adapted for contact with, or insertion into, printed circuits, flat or ribbon cables, or like generally planar structures
    • H01R12/50—Fixed connections
    • H01R12/51—Fixed connections for rigid printed circuits or like structures
    • H01R12/55—Fixed connections for rigid printed circuits or like structures characterised by the terminals
    • H01R12/57—Fixed connections for rigid printed circuits or like structures characterised by the terminals surface mounting terminals
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
    • H05K3/20—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern by affixing prefabricated conductor pattern
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/40—Forming printed elements for providing electric connections to or between printed circuits
    • H05K3/4007—Surface contacts, e.g. bumps
    • H05K3/4015—Surface contacts, e.g. bumps using auxiliary conductive elements, e.g. pieces of metal foil, metallic spheres

Abstract

A production method for forming contact structures on a planar surface of a substrate. The production method includes the steps of: (a) forming a sacrificial layer on a surface of a silicon substrate, (b) forming an conductive layer made of electric conductive material on the sacrificial layer, (c) forming a photoresist layer on the conductive layer, (d) aligning a photo mask over the photoresist layer and exposing the photoresist layer with ultraviolet light through the photo mask where the photo mask including an image of the contact structures, (e) developing the image on the photoresist layer which has openings on the surface of the photoresist layer, (f) forming the contact structures made of electric conductive material in the openings by an electroplating process, (g) stripping the photoresist layer, (h) removing the sacrificial layer by a first etching process so that the contact structures are separated from the silicon substrate, and (i) removing the conductive layer from the contact structure by a second etching process.

Description

A7 B7 五、發明說明（1 ) 發明領域 廣義而旨’本發明與生產接觸結構的方法有關，更明 確地說’與在半導體晶圓上生產水平方向的大量接觸結 構，並將接觸結構從晶圓中取出，以垂直方向接合於探針 卡、1C晶片或其它接觸機構的方法有關。 . 發明荀景 在測試高密度及局速的電氣裝置時，如L S I及 V L S I電路’必須使用具有極多接觸結構的高性能探針 卡（probe card )。在其它應用方面，接觸結構可以用於 i C封裝做爲I C引線。本發明指導用於測試l S I及 V L S I晶片、半導體晶圓、半導體晶圓及晶片燒機、已 封裝之半導體裝置及印刷電路板的測試與燒機、以及用於 構成I C晶片或I C封裝引線之接觸結構的生產方法。 本申請案的發明人等提出一種新的接觸結構，可用於 下列各美國專利申請案：1 9 9 8年6月1 9日提出申請 之美國專利申請案09/09 9，614，名稱爲“ Probe Contactor Formed by Photolithography Process" ， 1 9 9 8 年 8月2 7日提出申請之美國專利申請案〇 9/ 1 4 0 ’ 9 6 1 ，名稱爲 “ High Performance Integrated Circuit Chip Package ，以及 1 998 年 9 月 21 日提出 申請之美國專利申請案09/157 ，842 ，名稱爲 Package and Interconnection of Contact Structure"。本發 明指導生產這些專利申請案中所述之接觸結構的方法。 本纸也汶忠璉用屮家.伐準（CNSM.彳蜆格00 x 297公坌） (請先閱讀背面之注意事項再填寫本頁) 裝--------訂---------線 _21 * A / . ·、、、 _21 * A / . ·、、、 經濟部智慧財產局p Η消赀合作社卬_;[;“ A7 五、發明說明（2 ) 在上述的專利申請案中，發明人等提出一種獨特型式 的接觸結構，如圖1所示。圖1例所顯示之接觸結構3 0 的應用是接合於一探針卡上，用以電氣接觸目標物，如印 刷電路板3 0 0上的接墊3 2 0。接觸結構3 0是在半導 體基底2 0上以光學製版術成形，在上述的專利申請案中 有完整的描述。 一雖然上述專利申請案所介紹的生產方法很成功，但該 方法是在基底上的垂直方向成形結構，所需的光學製版步 驟較多。發明人等意欲一種更簡單且成本低的生產方法， 由於生產方法簡單，因此可以得到可靠度較高的接觸結 構。 發明槪述 因此’本發明的目的是提供一種使用較簡單技術生產 大重接觸結構的方法。 本發明的另一目的是提供一種在矽基底表面的平面 上’以2維方式而非3維方式生產大量接觸結構的方法。 本發明還有另一目的是提供一種在矽基底表面的平面 上’以2維方式生產大量的接觸結構，並從基底取出要接 合於探針卡或其它接觸機構的方法。 本發明還有另一目的是提供一種在矽基底表面的平面 上’以2維方式生產大量的接觸結構，並將接觸結構從基 底轉移到膠帶或膠片，再從膠帶或膠片上取出要接合於探 id H、或其匕接觸機構的方法。 太’:八也义/；1述丨Η中1¾四束惊ip- (CNSM.丨規格（21U X 297公餐）-5 - -^1 ^1 ^1 n n n 0 n ^^1 ^^1 n n n· n > n IT ft n ^^1 I (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消货合作枉r,i;^ 440897 A7 ___B7 五、發明說明（3 ) 本發明還有另一目的是提供一種以低成本及高效率生 產大量接觸結構的方法。 本發明還有另一目的是提供一種生產大量具有高機械 強度及可靠度之接觸結構的方法。 本發明還有另一目的是提供一種生產用於半導體晶 圓、已封裝L S I及類似物之測試及燒機之接觸結構的方 法。 - 按照本發明，在矽基底的平面上成形用於測試（包括 燒機）半導體晶圓、已封裝之L S I s或印刷電路板（裝 置待測試）之接觸結構的方法，是使用半導體生產製程中 已確立的光學製版技術。本發明的接觸結構也可以應用於 電子裝置的引線，如I C引線及接腳。 在第一項發明中，生產方法的步驟包括： (a) 在矽基底表面上成形一犧牲層： (b) 在犧牲層上以導電材料成形一導電層； (c) 在導電層上成形一光阻層； (d) 在光阻層上對準一光罩，並以紫外線透過光罩 對光阻層曝光，光罩中包括接觸結構的影像； (e) 顯影光阻層上的影像，它在光阻層上形成開口A7 B7 V. Description of the invention (1) The field of invention is broad and general. The present invention relates to a method for producing contact structures, and more specifically, it relates to the production of a large number of contact structures in a horizontal direction on a semiconductor wafer. It is related to the method of taking out in a circle and bonding to a probe card, a 1C chip or other contact mechanism in a vertical direction. Inventions When testing high-density and local-speed electrical devices, such as the L S I and V L S I circuits ’must use a high-performance probe card with an extremely multi-contact structure. In other applications, contact structures can be used in IC packages as IC leads. The present invention is directed to testing and burning of SI and VLSI wafers, semiconductor wafers, semiconductor wafers and wafer burners, packaged semiconductor devices and printed circuit boards, and for forming IC chip or IC package leads. Production method of contact structure. The inventors of this application proposed a new contact structure that can be used in the following U.S. patent applications: U.S. Patent Application 09/09 9,614, filed on June 19, 1998, entitled " Probe Contactor Formed by Photolithography Process ", U.S. patent application filed on August 27, 1998, 09/14 0 '9 6 1, entitled "High Performance Integrated Circuit Chip Package," and 1998 U.S. patent application 09 / 157,842 filed on September 21st, named Package and Interconnection of Contact Structure ". The present invention guides methods for producing the contact structures described in these patent applications. This paper is also used by Wen Zhongwen's family. Cutting standard (CNSM. 彳 蚬 格 00 x 297 公 坌) (Please read the precautions on the back before filling out this page) ------ line_21 * A /. · ,,, _21 * A /. · ,,, Intellectual Property Bureau of the Ministry of Economic Affairs p Η 消 赀 赀 社 卬 卬; [; "A7 V. Description of Invention (2) In the above patent application, the inventors proposed a unique type of contact structure, as shown in Fig. 1. The contact structure 30 shown in the example of Fig. 1 is applied to a probe card for electrical contact. A target object, such as a pad 3 2 0 on a printed circuit board 300. The contact structure 30 is formed by optical lithography on a semiconductor substrate 20, which is fully described in the aforementioned patent application. The production method described in the patent application is very successful, but this method is to form the structure in the vertical direction on the substrate, and requires more optical platemaking steps. The inventors and others intended a simpler and lower cost production method because of the production method It is simple, so a highly reliable contact structure can be obtained. A method for producing a heavy contact structure using a relatively simple technique is provided. Another object of the present invention is to provide a method for producing a large number of contact structures in a 2D manner instead of a 3D manner on a plane of the surface of a silicon substrate. Another object is to provide a method of 'producing a large number of contact structures in a two-dimensional manner on the plane of the surface of a silicon substrate and removing the substrate from the substrate to be bonded to a probe card or other contact mechanism. Another object of the present invention is to Provide a method to produce a large number of contact structures on a flat surface of a silicon substrate in a two-dimensional manner, and transfer the contact structures from the substrate to a tape or a film, and then take out the tape or the film to be bonded to the probe H, or a dagger contact The method of the organization. Too ': Yayoshi /; 1 description 丨 Η 中 1¾four beams ip- (CNSM. 丨 Specifications (21U X 297 meals) -5--^ 1 ^ 1 ^ 1 nnn 0 n ^^ 1 ^^ 1 nnn · n > n IT ft n ^^ 1 I (Please read the precautions on the back before filling out this page) Employees' cooperation in intellectual property bureau of the Ministry of Economic Affairs 枉 r, i; ^ 440897 A7 ___B7 V. Description of the Invention (3) The present invention also provides another object A method for producing a large number of contact structures at a low cost and high efficiency. Another object of the present invention is to provide a method for producing a large number of contact structures with high mechanical strength and reliability. Yet another object of the present invention is to provide a method for producing Method for testing semiconductor wafer, packaged LSI, and the like and contact structure of burn-in.-According to the present invention, forming on a silicon substrate plane for testing (including burn-in) semiconductor wafer, packaged LSI s The method of contact structure of printed circuit boards (devices to be tested) is to use the optical platemaking technology established in semiconductor manufacturing processes. The contact structure of the present invention can also be applied to leads of electronic devices, such as IC leads and pins. In the first invention, the steps of the production method include: (a) forming a sacrificial layer on the surface of the silicon substrate: (b) forming a conductive layer from a conductive material on the sacrificial layer; (c) forming a sacrificial layer on the conductive layer Photoresist layer; (d) aligning a photomask on the photoresist layer and exposing the photoresist layer with ultraviolet light through the photomask, the photomask including the image of the contact structure; (e) developing the image on the photoresist layer, It forms an opening in the photoresist layer

I (f) 以電鍍法在開口中成形由導電材料製成的接觸 結構； (g) 去除光阻層； (h) 以第一蝕程去除犧牲層，以使接觸結構脫離矽 本紙张&度適用中® ®家代車（CN'SM-!规格（2]0 X 297公复) ^6- ------:------- 裝--------訂---------線 . (請先閱讀背面之注意事項再填寫本頁) 440897 A7 _____B7___ 五、發明說明（4 ) 基底；以及 (I) 以第二蝕程去除接觸結構上的導電層。 第一項發明中的另一態樣是生產具有接觸結構之接觸 機構的方法，接觸結構每一個都顯現簧力，以建立與被接 觸之目標物間的電氣接觸。生產方法的步驟包括： (J) 在矽基底表面上成形一犧牲層； (k) 在犧牲層上以導電材料成形一導電層； -- (l) 以光學製版法成形接觸結構，接觸結構在矽基 底上的水平方向： (m) 從矽基底及從導電層上取下接觸結構： (η) 將接觸結構朝既定方向排列； (〇) 定位具有連接部位的接觸機構，以便將接觸結 構接合於其上；以及 (Ρ) 取至少一個接觸結構並置於接觸機構之接合接 墊上的既定位置，並將接觸結構與接合接墊接合。 第二項發明的生產方法是將所生產之水平方向的接觸 結構轉移到膠帶以便於稍後成形接觸機構時使用。第二項 發明之生產方法的步驟包括： (Q) 在矽基底表面上成形一犧牲層； (0 在犧牲層上以導電材料成形一導電層； (s) 在導電層上成形一光阻層； (t) 在光阻層上對準一光罩，並以紫外線透過光罩 對光阻層曝光，光罩中包括接觸結構的影像； (U) 顯影光阻層上的影像，它在光阻層上形成開口 -----J----:---^--------訂---------線 r (請先閲讀背面之注意事項再填寫本頁) 本汍乐Όΐ適Hj屮0闷絮忮準規格（2】0 X 297公发） -7- 經濟部智慧財產局員上消赀合作.^^^ A7 137 五、發明說明（5 ) 1 (V) 以電鍍法在開口中成形由導電材料製成的接觸 結構； (W) 去除光阻層； (X) 將膠帶置於接觸結構上，以使接觸結構的上表 面黏附於膠帶：以及 (y) 以蝕程去除犧牲層及導電層，以使膠帶上的接 觸結構脫離矽基底。 第二項發明的另一態樣是使用取放機構生產具有上述 接觸結構之接觸機構的方法。生產方法的步驟包括： (z) 在矽基底表面上成形一犧牲層； (aa) 在犧牲層上以導電材料成形一導電層； (bb) 以光學製版法在矽基底上的水平方向成形接觸 結構； (cc) 將接觸結構從矽基底轉移到膠帶； (dd) 將具有接觸結構的膠帶定位，並從其上取下接 觸結構； (ee) 將接觸結構朝向既定方向； (ff) 定位具有接合部位的接觸機構，以便將接觸結 構接合於其上：以及 (gg) 將接觸結構置於接觸機構之接合部位上的既定 位置’並將接觸結構與接合部位接合。 按照本發明，生產方法可以使用較簡單的技術在矽基 底上生產大量水平方向的接觸結構。所生產的接觸結構從 &庋通用中®因家標準（CNSh.Yi規格（2]0 X 297公坌） -8- ------；----:---裝--------訂---------線 Ϊ (請先閱讀背面之注意事項再填寫本頁) A7 B7 五、發明說明（6) 基底上取下，並以垂直方向接合於接觸機構上，例如探針 卡。以本發明的方法生產接觸結構的成本低且效率高，且 具有高機械強度及可靠度。使用以本發明之方法生產的接 觸結構應用於測試半導體晶圓、已封裝之L S I等（包括 燒機測試）都很方便。 圖式簡單說职 圖1的略圖顯示接合有接觸結構的探針卡與要被接觸 之目標物（諸如半導體晶圓）間的結構關係。 圖2 A — 2 D顯示本發明之生產方法的基本構想，其 中大量的接觸結構成形於矽基底的平表面上，在稍後的製 程中將從其上取下。 圖3 A - 3 L顯示本發明生產接觸結構之第一實施例 的製程。 圖4 A - 4 D顯示本發明生產接觸結構之第二實施例 的製程。 圖5顯示取下接觸結構並置於一基板（諸如探針卡） 上的方法。 圖6 A及6 B以槪圖顯示一取放機構例’它取下接觸 結構並放置於一基板上，如探針卡，並將接觸結構接合於 基板上。 ''圖7 A及7 B以槪圖顯示另一取放機構例，它取下接 觸結構並放置於一基板上，如探針卡，並將接觸結構接合 於蕋板上。 <請先閱讀背面之注意事項再填寫本頁) 訂---------線 經濟部智«財產局具工消费合作让.£. .¾ 440897 A7 ___B7 五、發明說明（7 ) 圖8的斜視圖顯示接觸機構例，如探針卡，其上具有 本發明之方法所生產的接觸結構。 圖9 A - 9 F顯示以本發明之生產方法所生產之接觸 結構的形狀例。 符號說明 3 〇 接觸結構 3 2 0 接墊 3 0 0 印刷電路板 2 0 半導體基底 4 0 矽基底 4 2 犧牲層 4 4 黏著促進層 4 6 導電層、- 4 8 光阻層\ 5 0 光罩 9 0 膠帶 5 2 盛器 5 5 取放機構 3 2 接合接墊 2 〇 探針卡 5 7 X — Y平台 6 0 取放機構 3 2 接合部位 本纸张尺度適用1丨,因國家惊準（C-NSW.1规格（2K) x 297公楚） -10- 11 H 1-- i —ί— - - - - J- - ί - I IE E -IW-OJI n I n n I (請先閱讀背面之注意事項再填寫本頁) "^089 7 A7 B7 五、發明說明（8 ) 7 1 6 2 6 3 6 8 7 3 7 6 7 4 7 5 8 0 8 4 8 6 8 7 8 1 8 2 7 8 第一傳送機構 移動臂 第二傳送機構 移動臂 軌 軌 水平/垂直轉向器 吸取臂 吸取臂 攝影機 攝影機 取放機構 傳送機構 移動臂 移動臂 平台 平台 監視攝影機 — — — ——1--------装.I---I 1 I ^ --------- (請先閱讀背面之立意事項再填寫本頁) 經濟部智慧財產局員工消赀合打社印.¾ 較佳實施例詳細描述 當接觸結構壓向印刷電路板3 0 0上的接塾3 2 0 時，由於圖1的每一個接觸結構3 0都具有橫衍，因此會 因簧力而產生接觸壓力。接觸壓力也會使接觸結構的尖端 在接墊3 2 0上產生擦的效果。各種接觸結構的形狀如圖 本紙张K度適用中國國家標渠iCNS)A..丨規格（2]0 * 297公复> -11 - 經濟部智慧財產局員工消货合作社印,'-“ A7 B7 五、發明說明（9 ) 9 A - 9 F所示。圖2顯示本發明生產這種接觸結構的基 本構想。在本發明中，如圖2 A所示，接觸結構是生產在 矽基底平表面上的水平方向1即，以2維的方式生產。在 第一實施例中，如圖2 B所示，將接觸結構從矽基底上取 下，以便以垂直方向接合於印刷電路板、I C晶片或其它 接觸機構上，即，以3維的方式，如圖8所示。 在第二實施例中，如圖2 C所示，它與圖2 A相同， 接觸結構是生產在矽基底平表面上的水平方向，即 > 以2 維的方式生產。接著，如圖2 D所示，接觸結構從基底轉 移到黏性構件，如膠帶、膠膜及膠片（統稱爲“謬 帶”）。使用取放機構取下膠帶上的接觸結構’以垂直方 向接合於印刷電路板、I C晶片或其它接觸機構上，即， 以3維的方式，如圖8所示。 圖3 A - 3 L例示說明本發明生產接觸結構第一實施 例的製程。在圖3 A中，犧牲層4 2成形於矽基底4 0 上。構成犧牲層4 2的方法例如以化學氣相沈積（ CVD)法沈積二氧化矽（Si〇2)。犧牲層42的作用 是在製程的稍後階段中使接觸結構與矽基底分離。 接下來，例如以蒸鍍法在犧牲層4 2上成形黏著促進 層4 4 ，如圖3 B所示。黏著促進層4 4的材料包括鉻 (Cr)及鈦（Τι)，其厚度爲 20Q — 1’0〇〇Α。 黏著促進層4 4的作用是利於導電層4 6黏著於矽基底 4 0上，如圖3 C所示。導電層4 6例如是由銅（Cu) 或鎳（Ni )製成，其厚度爲1 ’ — 5 ’ 〇〇〇A。 ------?----^---裝·-------訂·-------. <請先閱讀背面之注意事項再填寫本頁) 本纸张心咬述丨fj中阀围家彳J4UCNS)A.彳規格297公楚） -12- 經-部智慧財產局員工消赀合竹，^|:';." A7 __B7___ 五、發明說明（]〇) 導電層4 6是爲稍後階段的電鍍建立電氣傳導。 接下來的製程是在導電層4 6上成形光阻層48 ，光 罩5 0在光阻層4 8上精確地對正，並以紫外線（UV) 曝光，如圖3 D所示。光罩5 0顯現接觸結構3 0的2維 影像，接觸結構將顯影在光阻層4 8上。如習知技術，爲 達此目的1正或負的光阻都可以使用。如果使用正光阻， --被光罩5 0不透明部分蓋住的光阻在曝光後硬化。這類光 阻材料包括Novo 1 ak (M-甲酚-甲醛）、 PMMA (聚甲基丙基酸酯）、SU— 8及光敏聚醯亞 氨。光阻被曝光的部分會被溶解及沖洗掉，留下具有圖 3 E之開口 a的光阻層4 8 (顯影程序）。圖3 F是光阻 層4 8的頂視圖，圖3 E中的開口 A具有接觸結構3 0的 形狀。 在前述的光學製版法中，對光阻層4 8曝光的紫外線 也可改用電子束或X —射線，這都是習知技術。此外，也 $以·利用直寫的電子束、X 一射線或光源（雷射）對光阻 4 8曝光’將接觸結構的影像直接寫入光阻層4 8。 導電材料，如銅（Cu)、鎳（N：i)、鋁（I (f) forming a contact structure made of a conductive material in the opening by electroplating; (g) removing the photoresist layer; (h) removing the sacrificial layer by a first etching process so that the contact structure is separated from the silicon paper & Applicable in the ® ® family car (CN'SM-! Specification (2) 0 X 297 public duplicate) ^ 6- ------: ------- installed -------- --------- line. (Please read the precautions on the back before filling this page) 440897 A7 _____B7___ V. Description of the invention (4) Substrate; and (I) Remove the contact structure by the second etching process Another aspect of the first invention is a method of producing a contact mechanism with a contact structure, each of which exhibits a spring force to establish electrical contact with the target being contacted. The method of production The steps include: (J) forming a sacrificial layer on the surface of the silicon substrate; (k) forming a conductive layer with a conductive material on the sacrificial layer;-(l) forming a contact structure by an optical plate-making method, and the contact structure is on the silicon substrate Horizontal direction: (m) Remove the contact structure from the silicon substrate and the conductive layer: (η) Align the contact structure in a predetermined direction; (〇) Position the connection part A contact mechanism to engage the contact structure thereon; and (P) taking at least one contact structure and placing it at a predetermined position on a joint pad of the contact mechanism and joining the contact structure with the joint pad. Production method of the second invention It is to transfer the produced horizontal contact structure to the tape for later use when forming the contact mechanism. The steps of the production method of the second invention include: (Q) forming a sacrificial layer on the surface of the silicon substrate; (0 in A conductive layer is formed of a conductive material on the sacrificial layer; (s) a photoresist layer is formed on the conductive layer; (t) a photomask is aligned on the photoresist layer, and the photoresist layer is exposed through the photomask with ultraviolet rays, The photomask includes an image of the contact structure; (U) The image on the photoresist layer is developed, which forms an opening in the photoresist layer ----- J ----: --- ^ ------- -Order --------- Line r (Please read the notes on the back before filling in this page) This book is suitable for Hj 屮 0 stuffy 忮 standard specifications (2) 0 X 297 public hair) -7 -Cooperation between members of the Intellectual Property Bureau of the Ministry of Economic Affairs. ^^^ A7 137 V. Description of the invention (5) 1 (V) Formed in the opening by electroplating and conductive by A contact structure made of material; (W) removing the photoresist layer; (X) placing the tape on the contact structure so that the upper surface of the contact structure adheres to the tape: and (y) removing the sacrificial layer and the conductive layer by an etching process In order to separate the contact structure on the tape from the silicon substrate. Another aspect of the second invention is a method of using a pick-and-place mechanism to produce a contact mechanism having the above-mentioned contact structure. The steps of the production method include: (z) on the surface of the silicon substrate Forming a sacrificial layer on top; (aa) forming a conductive layer on the sacrificial layer using a conductive material; (bb) forming a contact structure on a silicon substrate in a horizontal direction by an optical plate-making method; (cc) transferring the contact structure from the silicon substrate to Adhesive tape; (dd) Position the adhesive tape with the contact structure and remove the contact structure from it; (ee) Orient the contact structure to the predetermined direction; (ff) Position the contact mechanism with the joint part so as to join the contact structure to it Top: and (gg) Place the contact structure at a predetermined position on the joint of the contact mechanism 'and engage the contact structure with the joint. According to the present invention, the production method can use a relatively simple technique to produce a large number of horizontal contact structures on a silicon substrate. The contact structure produced is from & 庋 Universal® due to the home standard (CNSh.Yi specification (2) 0 X 297 public 坌) -8- ------; ----: ----- ------ Order --------- Line Ϊ (Please read the precautions on the back before filling in this page) A7 B7 V. Description of the invention (6) Remove from the substrate and join it vertically On a contact mechanism, such as a probe card. The method for producing a contact structure by the method of the present invention has low cost and high efficiency, and has high mechanical strength and reliability. The contact structure produced by the method of the present invention is used to test a semiconductor wafer. , Packaged LSI, etc. (including burn-in testing) are very convenient. The diagram is simple. The sketch in Figure 1 shows the structure between the probe card with the contact structure attached and the target (such as a semiconductor wafer) to be contacted. Relationships. Figures 2 A-2 D show the basic idea of the production method of the present invention, in which a large number of contact structures are formed on the flat surface of a silicon substrate, which will be removed therefrom in a later process. Figure 3 A-3 L shows the manufacturing process of the first embodiment of producing the contact structure of the present invention. Figures 4 A-4 D show the producing of the contact structure of the present invention The manufacturing process of the second embodiment. Fig. 5 shows a method for removing a contact structure and placing it on a substrate (such as a probe card). Figs. 6A and 6B show an example of a pick-and-place mechanism in which the contact structure is removed. It is placed on a substrate, such as a probe card, and the contact structure is bonded to the substrate. '' Figures 7 A and 7 B show another example of a pick-and-place mechanism in the figure, which removes the contact structure and places it on a substrate. (Such as a probe card, and the contact structure is bonded to the fascia board. ≪ Please read the precautions on the back before filling this page) Consumption cooperation let. £. ¾ 440897 A7 ___B7 V. Description of the invention (7) The oblique view of Fig. 8 shows an example of a contact mechanism, such as a probe card, having a contact structure produced by the method of the present invention. 9A to 9F show examples of shapes of contact structures produced by the production method of the present invention. Explanation of symbols 3 〇 contact structure 3 2 0 pad 3 0 0 printed circuit board 2 semiconductor substrate 4 silicon substrate 4 sacrifice layer 4 4 adhesion promotion layer 4 6 conductive layer,-4 8 photoresistive layer \ 5 0 photomask 9 0 Adhesive tape 5 2 Holder 5 5 Pick-and-place mechanism 3 2 Joint pad 2 〇 Probe card 5 7 X — Y platform 6 0 Pick-and-place mechanism 3 2 Joints This paper size is applicable 1 丨 because of national surprise (C- NSW.1 Specifications (2K) x 297 Gong Chu) -10- 11 H 1-- i —ί—----J--ί-I IE E -IW-OJI n I nn I (Please read the Please fill out this page again) " ^ 089 7 A7 B7 V. Invention Description (8) 7 1 6 2 6 3 6 8 7 3 7 6 7 4 7 5 8 0 8 4 8 6 8 7 8 1 8 2 7 8 The first conveying mechanism moving arm The second conveying mechanism moving arm rail rail horizontal / vertical steering device Suction arm Suction arm camera Camera pick and place mechanism Conveying mechanism moving arm moving arm platform platform surveillance camera — — — — 1 ----- --- Equipment. I --- I 1 I ^ --------- (Please read the intentions on the back before filling out this page) Best embodiment When the fine described contact structure 320 is pressed against the contact Sook 30 0 on a printed circuit board, since each of the contact structure 30 of FIG. 1 has a cross-derivatives, the spring force thus generated by the contact pressure. The contact pressure will also cause the tip of the contact structure to rub on the pad 3 2 0. The shapes of the various contact structures are shown in the paper. K degrees are applicable to the Chinese National Standard Channel iCNS) A .. 丨 Specifications (2) 0 * 297 public reply > -11-Printed by the Consumer Goods Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs, '-" A7 B7 V. Description of the invention (9) 9 A-9 F. Figure 2 shows the basic idea of producing the contact structure of the present invention. In the present invention, as shown in Figure 2 A, the contact structure is produced on a silicon substrate The horizontal direction 1 on the flat surface is produced in a two-dimensional manner. In the first embodiment, as shown in FIG. 2B, the contact structure is removed from the silicon substrate to be bonded to the printed circuit board in a vertical direction, On the IC chip or other contact mechanism, that is, in a three-dimensional manner, as shown in Fig. 8. In the second embodiment, as shown in Fig. 2C, it is the same as Fig. 2A, and the contact structure is produced on a silicon substrate Horizontal direction on a flat surface, i.e.> produced in a two-dimensional manner. Then, as shown in Figure 2D, the contact structure is transferred from the substrate to the viscous member, such as tape, film, and film (collectively referred to as the "miss tape" ). Use the pick-and-place mechanism to remove the contact structure on the adhesive tape 'join the printed circuit board vertically. On a circuit board, IC chip, or other contact mechanism, that is, in a three-dimensional manner, as shown in Fig. 8. Figs. 3A-3L illustrate the process of producing the first embodiment of the contact structure of the present invention. In Fig. 3A The sacrificial layer 42 is formed on a silicon substrate 40. The method of forming the sacrificial layer 42 is, for example, chemical vapor deposition (CVD) to deposit silicon dioxide (SiO2). The role of the sacrificial layer 42 is slightly in the manufacturing process. In a later stage, the contact structure is separated from the silicon substrate. Next, for example, an adhesion promoting layer 4 4 is formed on the sacrificial layer 4 2 by evaporation, as shown in FIG. 3B. The material of the adhesion promoting layer 44 includes chromium (Cr ) And titanium (Ti), its thickness is 20Q-1'0OOA. The role of the adhesion promotion layer 44 is to facilitate the adhesion of the conductive layer 46 to the silicon substrate 40, as shown in FIG. 3C. The conductive layer 4 6 For example, it is made of copper (Cu) or nickel (Ni), and its thickness is 1 '-5' 〇〇〇A. ------? ---- ^ --- packing · ---- --- Order · -------. ≪ Please read the precautions on the back before filling in this page) This paper describes the heart of the paper 丨 fj Middle valve enclosure 彳 J4UCNS) A. 彳 Specification 297) 12- Employees of the Intellectual Property Bureau ^ |: ';. " A7 __B7___ 5. Description of the Invention () 〇) The conductive layer 46 is used to establish electrical conduction for the plating at a later stage. The next process is to form a photoresist layer 48 on the conductive layer 46. The photomask 50 is precisely aligned on the photoresist layer 48, and is exposed with ultraviolet (UV) light, as shown in Figure 3D. The photomask 50 displays a two-dimensional image of the contact structure 30, and the contact structure will be developed in Photoresist layer 48. As is known in the art, either positive or negative photoresistors can be used for this purpose. If a positive photoresist is used, the photoresist covered by the opaque part of the mask 50 will harden after exposure. Such photoresist materials include Novo 1 ak (M-cresol-formaldehyde), PMMA (polymethylpropionate), SU-8, and photosensitive polyimide. The exposed portion of the photoresist will be dissolved and washed away, leaving a photoresist layer 4 8 with an opening a in FIG. 3E (development process). Fig. 3F is a top view of the photoresist layer 48, and the opening A in Fig. 3E has the shape of a contact structure 30. In the aforementioned optical plate-making method, the ultraviolet rays exposed to the photoresist layer 48 can also be changed to electron beams or X-rays, which are conventional techniques. In addition, the photoresist 48 is exposed by using a directly written electron beam, X-ray, or light source (laser) to write the image of the contact structure directly into the photoresist layer 48. Conductive materials, such as copper (Cu), nickel (N: i), aluminum (

Au)、釕（Ru)、鈾（Pd)、鎢（W)或其它金屬 r尤積（電鍍）到光阻層4 8的開口 A，以構成接觸結構 3 0 ’如圖3 G所示。接觸結構與導電層4 6之材料的蝕 别特性不同較爲有利，將在稍後描述。在圖3 G中接觸結 構3 〇過多的部分可以利用硏磨處理（整平）將其去除， 如圖3 Η所示。 中邮㈣準(CNS)A4規格⑵。x2g7公餐) -13- n n n .^1 · i n D n I n n 一—OJ* 1 n n n n I 、 (請先閱讀背面之注意事項再填寫本頁) 440897 Λ7 __B7___ 五、發明說明（11) 接下來進入去除光阻層4 8的步驟，如圖3'vf所示。 典型上’是以濕式化學處理將光阻層4 8去除。其它的例 子有丙酮式及電漿〇2式。在圖3h中，犧牲層4 2被触 離’以使接觸結構3 0與矽基底4 0分離。還須要進行其 它的蝕程’以將黏著促進層4 4及導電層4 6從接觸結構 3 0蝕離，如圖3 K所示。 蝕刻的條件經過選擇，只蝕層4 4及4 6…，但不蝕接 觸結構3 0。換言之，蝕去導電層4 6但不腐蝕接觸結構 3 0 ，如前所述，接觸結構3 0所使用的導電材料必須與 導電層的材料不同。最後，接觸結構3 0與其它所有材料 分離’如圖3 L的斜視圖所示。雖然圖3 A — 3 L的製程 中只顯示了 一個接觸結構，但在實際的製程中，如圖2 A - 2 D所示，可以同時生產大量的接觸結構。 圖4 A — 4 D例示說明本發明生產接觸結構第二實施 例的製程。第二實施例是在製程中使用膠帶將接觸結構從 矽基底轉移到膠帶上。圖4A - 4D只顯示製程的後半部 分’從使用膠帶開始。 圖4A所顯示的處理相當於圖3 I所顯示的處理，其 中光阻層4 8在去除光阻的處理中被去除。接著，同樣是 圖4A，將膠帶9 0置於接觸結構3 0的上表面，以使接 觸結構3 0黏附於膠帶9 0 »如圖2 D所示，就本發明的 惜況，膠帶9 0包括其它類型的黏著構件，諸如膠膜、膠 片或類似物。 在圖4 B所示的處理中，犧牲層4 2被蝕離 > 以使膠 -----l·---：---^--------訂---------線- ί請先閲讀背面之注意事項再填寫本頁} 水?乂乐心墁適丨丨丨屮1¾ 1¾家悻準（CNS)A+.彳規格（2Κ) X 297公坌） -14- 經濟部智慧財產局貧工消赀合竹祍印"“ 440 89 7 A7 ---—_B7 五、發明說明（i2) 帶9 0上的接觸結構3 〇脫離矽基底4 〇。還要進行其它 的齡程，以去除接觸結構3 〇上的黏著促進層4 4及導電 層46，如圖4C所示。 如前所述，爲蝕去導電層4 6而不腐蝕接觸結構 3 〇 ’接觸結構3 0所使用的導電材料必須導電層的材料 不同。雖然圖4A - 4 C只顯示了一個接觸結構，但在實 際的製程中，可同時生產大量的接觸結構。因此，-有大量 的接觸結構3 0轉移到膠帶9 0，並與矽基底及其它材料 分離。 圖5顯示拾取由本發明第一實施例所生產之接觸結構 並置於基板（諸如探針卡）上的過程。容器5 2中盛裝由 圖3 A - 3 L之方法所生產的接觸結構3 〇 ，並將接觸結 構提供給一取放機構5 5。容器5 2或取放機構5 5應具 備對準能力，以使取放機構5 5在相同的位置及方向抓取 接觸結構。一具有接合接墊3 2的探針卡2 0置於X — Y 台面5 7上。X — Y台面5 7可以在X及Y方向以及垂直 方向微調探針卡2 0的位置，以使取放機構5 5能精確地 將接觸結構3 0放置在對應的接合接墊3 2上。 圖6 A及6 B顯示取放機構例’以及從膠帶9 〇拾取 接觸結構3 0並放置到基板2 0 (如探針卡）上的過程。 圖6的取放機構以使用本發明第二實施例所生產的接觸結 構較爲方面°圖6 A是取放機構5 〇的頂視圖，圖6 B是 取放機構的前視圖，從膠帶9 0上拾取接觸結構3 〇，並 將接觸結構放置到基底2 0的接合部位3 2 ，俾使接觸結 ------;----.---裝--------訂---------線 . (請先閱讀背面之注意事項再填寫本頁) 本纸张乂墁遗坩中®國家洁來（CNSM·1規格<210 x 297公釐） -15- 經濟部智慧財產局員工消赀合作社111¾ ' 9 7 A7 B7________ ^-------------- 五、發明說明（13) 構3 0能被接合機（未顯示）接合到接合部位3 2上° 在本例中，取放機構β 〇包括第一傳送機構7 1用以 拾取、傳送及放置接觸結構3 0，移動臂6 5允許傳送機 構7 1在Υ -方向移動，第二傳送機構7 2也是用以拾 取、傳送及放置接觸結構3 0 ，移動臂6 6允許傳送機構 7 2在Υ -方向移動，軌6 2及6 3允許移動臂6 5及 6 6在X -方向移動。因此，傳送機構7 1及7 2可以在 取放機構6 0上在X及Υ方向自由移動。在圖6 Α及6 Β 中，取放機構6 0還包括水平/垂直轉向器6 8 ，用以容 納接觸結構3 0並改變它們的方向。 傳送機構7 1包括吸取臂7 3 ’執行吸取（拾取動 作）及釋放（放置動作）接觸結構3 0的操作。吸力例如 是由負壓所產生，如真空。吸取臂7 3在Z方向（上-下 方向）移動。同樣地，傳送機構7 2也包括一吸取臂 7 6 ，也是執行吸取（拾取動作）及釋放（放置動作）接 觸結構3 0的操作。吸取臂7 6在Z方向移動。如圖6 A 及6 B所示’攝影機7 4及7 5 ’例如C C D影像偵測 器’分別附接於傳送機構7 1及7 2 ，用以獲得影像資 料，以正確地控制傳送機構7 1及7 2的移動。 . 操作時，具有接觸結構3 〇的膠帶9 〇與具有接合部 位3 2的基板2 0分別置入取放機構6 〇。膠帶9 〇及基 板最好放置在X Y Z平台上（未顯示），以便能調整χ ' Υ及Ζ方向的位置。如圖6 Α所示，傳送機構7 ^以吸取 臂7 3的吸力從膠帶9 0上拾取接觸結構3 〇並放置到 本印、Λ、墁琦屮屮围a家標半（CNShA·!规格（210 X 公楚> -Ιό- ---------：---褒 *-------訂-------- ' (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局貸工消t合作社印 B7 五、發明說明（14) 向器6 8。在放置某既定數量的接觸結構3 〇後’水平方 向的接觸結構3 〇被轉換成垂直方向。 傳送機構7 2接著以吸取臂7 6的吸力拾取轉向器 6 8中的接觸結構。經由轉向器6 8的操作，接觸結構 3 Q轉成垂直方向，如圖6 B所示。傳送機構7 2將接觸 結構3 0放置到基板2 0的接合部位3 2上。接觸結構 -..3 0以習知的接合方法接合到接合部位3 2上。 圖7 A及7 B顯示從膠帶9 0拾取接觸結構並放置到 基板上的另一實施例。圖7的取放機構適合使用本發明第 二實施例所生產的接觸結構。圖7 A是取放機構8 0的前 視圖，顯示取放操作的前半過程。圖7 B也是取放機構 8 0的前視圖，顯示取放操作的後半過程。 在本例中，取放機構8 0包括傳送機構8 4，用以拾 取及放置接觸結構3 0 ’移動臂8 6及8 7可使傳送機構 8 4在X、Y及Z方向移動，平台8 1及8 2的位置也可 在X、Y及Z方向調整’其內還有一部監視攝影機7 8 ， 例如C C D攝影機。傳送機構8 4包括一吸取臂8 5，執 行吸取（拾取動作）及釋放（放置動作）接觸結構3 〇的 操作。吸力例如是由負壓所產生，如真空。吸取臂8 5可 旋轉一既定角度，例如9 0度。 操作時，具有接觸結構3 0的滕帶9 〇與具有接合部 位3 2的基板2 0分別放置於取放機構8 〇的平台8 1及 8 2上。如圖7 A所示’取放機構8 〇藉吸取臂8 5的吸 力從膠帶9 0上拾取接觸結構3 〇。拾取接觸結構3 〇之 木纸依/之度適用中FS國家標準（CIVSM-丨规格（2K) X 297公坌） -17- (請先閱讀背面之注意事項再填寫本頁) ____I___—_____ 440897 Λ7 B7Au), ruthenium (Ru), uranium (Pd), tungsten (W), or other metals r are deposited (electroplated) to the opening A of the photoresist layer 48 to form a contact structure 30 'as shown in FIG. 3G. It is advantageous for the contact structure to have different etching characteristics from the material of the conductive layer 46, which will be described later. The excessive part of the contact structure 3 in FIG. 3G can be removed by honing (leveling), as shown in FIG. 3 (a). China Post Standard (CNS) A4. x2g7 公 餐) -13- nnn. ^ 1 · in D n I nn I—OJ * 1 nnnn I ， (Please read the precautions on the back before filling in this page) 440897 Λ7 __B7___ 5. Description of the invention (11) Next The step of removing the photoresist layer 48 is shown in FIG. 3'vf. Typically, the photoresist layer 48 is removed by a wet chemical treatment. Other examples are acetone and plasma 02. In Fig. 3h, the sacrificial layer 42 is touched off 'to separate the contact structure 30 from the silicon substrate 40. It is also necessary to perform another etching process to etch the adhesion promoting layer 44 and the conductive layer 46 from the contact structure 30, as shown in FIG. 3K. The etching conditions are selected, and only the layers 4 4 and 4 6 ... are etched, but the contact structure 30 is not etched. In other words, the conductive layer 46 is etched away but the contact structure 30 is not etched. As mentioned before, the conductive material used for the contact structure 30 must be different from the material of the conductive layer. Finally, the contact structure 30 is separated from all other materials' as shown in the oblique view of Fig. 3L. Although only one contact structure is shown in the processes of Figures 3 A-3 L, in the actual process, as shown in Figures 2 A-2 D, a large number of contact structures can be produced simultaneously. 4A-4D illustrate a process for producing a second embodiment of a contact structure according to the present invention. The second embodiment uses tape to transfer the contact structure from the silicon substrate to the tape during the manufacturing process. Figures 4A-4D show only the second half of the process' starting with the use of tape. The process shown in Fig. 4A is equivalent to the process shown in Fig. 3I, in which the photoresist layer 48 is removed in the process of removing the photoresist. Next, similarly to FIG. 4A, the adhesive tape 90 is placed on the upper surface of the contact structure 30, so that the contact structure 30 adheres to the adhesive tape 90. As shown in FIG. 2D, according to the plight of the present invention, the adhesive tape 90 Other types of adhesive members are included, such as film, film, or the like. In the process shown in FIG. 4B, the sacrificial layer 42 is etched away> to make the glue ----- l · ---: --- ^ -------- order ---- ----- Line- ί Please read the precautions on the back before filling out this page} Water? 乂 墁 心心 墁 丨 丨 丨 屮 1¾ 1¾ Home Standard (CNS) A +. 彳 Specification (2K) X 297 male 坌) -14- Poor Workers of the Intellectual Property Bureau of the Ministry of Economic Affairs Eliminate Poor Seals " "440 89 7 A7 -------_ B7 V. Description of the Invention (i2) Contact Structure on Belt 9 0 3 〇Separation from Silicon Substrate 4 〇 There are other ages to remove the adhesion promoting layer 44 and the conductive layer 46 on the contact structure 30, as shown in FIG. 4C. As described above, the conductive layer 46 is etched without corroding the contact structure. The conductive material used in the 3′0 ′ contact structure must be different from the conductive layer. Although FIGS. 4A-4C show only one contact structure, in the actual manufacturing process, a large number of contact structures can be produced simultaneously. Therefore, − There are a large number of contact structures 30 transferred to the tape 90 and separated from the silicon substrate and other materials. Fig. 5 shows a contact structure produced by the first embodiment of the present invention picked up and placed on a substrate (such as a probe card). The container 5 2 contains the contact structure 3 0 produced by the method of FIGS. 3A-3L, and provides the contact structure to a pick-and-place mechanism 5 5. The container 5 2 or the pick-and-place mechanism 55 should have alignment Ability to make the pick-and-place mechanism 5 5 grasp the contact structure in the same position and direction. A probe card 2 with a bonding pad 3 2 is placed on the X-Y table 5 7. X-Y table 5 7 can Finely adjust the position of the probe card 20 in the X and Y directions and the vertical direction so that the pick-and-place mechanism 55 can accurately place the contact structure 30 on the corresponding bonding pad 32. Figures 6 A and 6 B show Example of a pick-and-place mechanism and the process of picking up the contact structure 30 from the tape 90 and placing it on the substrate 20 (such as a probe card). The pick-and-place mechanism of FIG. 6 uses the contact structure produced by the second embodiment of the present invention. Relative aspects: Figure 6 A is a top view of the pick-and-place mechanism 50, and Figure 6 B is a front view of the pick-and-place mechanism, picking up the contact structure 3 from the tape 90, and placing the contact structure on the substrate 20 for bonding Part 3 2, make contact with the knot ------; ----.--------------------------- order the line. (Please read the back first Note again (Write this page) Remains in this paper ® National Jielai (CNSM · 1 specifications < 210 x 297 mm) -15- Employees 'Cooperatives, Intellectual Property Bureau, Ministry of Economic Affairs 111¾' 9 7 A7 B7________ ^ --- ----------- V. Description of the invention (13) Structure 3 0 can be joined to the joint 32 by a joining machine (not shown) ° In this example, the pick-and-place mechanism β 〇 includes the first The transfer mechanism 71 is used to pick up, transfer and place the contact structure 30, and the moving arm 65 allows the transfer mechanism 71 to move in the Υ-direction. The second transfer mechanism 72 is also used to pick up, transfer and place the contact structure 30, The moving arm 66 allows the transfer mechanism 72 to move in the Υ-direction, and the rails 6 2 and 6 3 allow the moving arms 6 5 and 6 6 to move in the X-direction. Therefore, the transfer mechanisms 7 1 and 72 can move freely in the X and Υ directions on the pick-and-place mechanism 60. In FIGS. 6A and 6B, the pick-and-place mechanism 60 also includes a horizontal / vertical deflector 6 8 to accommodate the contact structures 30 and change their directions. The conveying mechanism 71 includes operations of a suction arm 7 3 ′ to perform a suction (pickup operation) and a release (placement operation) of the contact structure 30. Suction is created, for example, by negative pressure, such as a vacuum. The suction arm 7 3 moves in the Z direction (up-down direction). Similarly, the conveying mechanism 72 also includes a suction arm 76, which is also an operation for performing the suction (pickup action) and release (placement action) of the contact structure 30. The suction arm 76 moves in the Z direction. As shown in FIGS. 6A and 6B, 'cameras 7 4 and 7 5' such as CCD image detectors' are attached to the transmission mechanisms 7 1 and 7 2 respectively to obtain image data to correctly control the transmission mechanism 7 1 And 7 2 moves. During operation, the adhesive tape 90 with the contact structure 30 and the substrate 20 with the joint 32 are respectively placed in the pick-and-place mechanism 60. The tape 90 and the substrate are preferably placed on the X Y Z stage (not shown) so that the positions in the χ ′ 'and Z directions can be adjusted. As shown in FIG. 6A, the conveying mechanism 7 ^ picks up the contact structure 3 0 from the adhesive tape 90 with the suction force of the suction arm 7 3 and places it on the home seal half of the main seal, Λ, and 墁 琦 屮 屮 围 (CNShA ·! Specifications (210 X 公 楚 > -Ιό- ---------: --- 褒 * ------- order -------- '(Please read the precautions on the back first (Fill in this page again.) The Ministry of Economic Affairs, Intellectual Property Bureau, Loan Workers, Cooperative Cooperative Association, B7. 5. Description of the invention (14) Directional device 6 8. After placing a certain number of contact structures 3 0, the horizontal contact structure 3 0 is converted. The conveying mechanism 72 then picks up the contact structure in the steering gear 68 with the suction of the suction arm 76. Through the operation of the steering gear 68, the contact structure 3Q turns into a vertical direction, as shown in FIG. 6B. The transfer mechanism 7 2 places the contact structure 30 on the joint portion 32 of the substrate 20. The contact structure-.. 3 0 is joined to the joint portion 3 2 by a conventional joining method. Figs. 7A and 7B show from Another embodiment of the tape 90 picking up the contact structure and placing it on the substrate. The pick-and-place mechanism of FIG. 7 is suitable for using the contact structure produced by the second embodiment of the present invention. FIG. 7 A is the pick-and-place mechanism 8 The front view of 0 shows the first half of the pick-and-place operation. Figure 7B is also the front view of the pick-and-place mechanism 8 0, which shows the second half of the pick-and-place operation. In this example, the pick-and-place mechanism 80 includes the transport mechanism 84, Used to pick up and place the contact structure 3 0 'The moving arms 8 6 and 8 7 can make the conveying mechanism 8 4 move in the X, Y and Z directions, and the positions of the platforms 8 1 and 8 2 can also be adjusted in the X, Y and Z directions 'There is also a surveillance camera 7 8, such as a CCD camera. The conveying mechanism 84 includes a suction arm 85, which performs the operations of suction (pickup) and release (placement) of the contact structure 30. The suction is, for example, negative The pressure is generated, such as a vacuum. The suction arm 85 can be rotated by a predetermined angle, for example, 90 degrees. During operation, a tenter belt 9 with a contact structure 30 and a substrate 20 with a joint 32 are respectively placed in the pick and place. The platforms 8 1 and 8 2 of the mechanism 8 〇. As shown in FIG. 7A, the pick-and-place mechanism 8 〇 picks up the contact structure 3 from the adhesive tape 90 by the suction force of the suction arm 8 5. Picks the paper of the contact structure 3 〇 Applicable to the national standard of FS according to the degree (CIVSM- 丨 Specification (2K) X 297mm) -17- (Please read the notes on the back before filling this page) ____ I ___—_____ 440897 Λ7 B7

經濟部智慧財產局員工消货合作社印VU 五、發明說明（π) 後，吸取臂85旋轉90度，如圖7Β所示。因此，接觸 結構3 0的方向從水平方向轉到垂直方向。傳送機構8 4 接著將接觸結構3 0放置.到基板2 0的接合部位3 2上。 接觸結構3 0經由習知的接合程序接合到接合部位3 2 上。 圖8的斜視圖顯示接觸機構例，諸如具有本發明所生 產之接觸結構的接觸探針。每一個接觸鲒構3 0經由接合 附著於接墊的表面。接合技術包括銅焊、超音波鎔接、導 電黏著、焊接、及微波鎔接。 圖9 A- 9 F是以本發明之製程所生產之接觸結構的 开;ί狀例。圖9 Α - 9 F僅是顯不的幾個例，並非包括所有 形狀’因此’其它的接觸結構形狀也都合用。當接合到接 觸機構，如由印刷電路板製成的探針卡，並壓向所要接觸 的目標物’如待測之半導體晶圓上的接墊，圖9 A — 9 F 所示的接觸結構由於簧的效果而顯現出接觸力，並對所接 觸的目標物表面生產擦的效果。 按照本發明的製程，可以使用較簡單的技術在矽基底 上生產大量水平方向的接觸結構。所生產的接觸結構可以 從基底上取下’並以垂直方向接合到接觸機構，如探針 卡。以本發明生產接觸結構，不但成本低且效率高，又具 有高機械強度及可靠度。以本發明之方法生產接觸結構， 應用於測試半導體晶圓' 封裝之L S I及類似物，包括燒 機測試，都很方便。 雖然$文是以特定的較佳實施例說明及描述，但很明 本紐.¾ 適II]屮闷國家標丰（CNS)Al -18- ------r I r—:---^--------訂---------線 . {請先閱讀背面之注意事項再填寫本頁) 440897 A7 B7 五、發明說明（16) 化 變 與 變 改 神 精 的 明 發 本 離 的偏 多會 很不 做， 可內 明圍 發範 本的 ’ 圍 顯範 利 專 請 串 附 所 在 都 •二：ij 的 欲 意 與 圍 (請先閱讀背面之注意事項再填寫本頁) 裝--------訂----------線 經濟部智慧財產局員工消费合作社·111¾ 本纸仏义度:用中围國家標準（CN S) A-彳規格（2] 0 X 297公t ) - 19 -VU printed by the Consumer Goods Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 5. After the description of the invention (π), the suction arm 85 rotates 90 degrees, as shown in FIG. 7B. Therefore, the direction of the contact structure 30 is changed from the horizontal direction to the vertical direction. The transfer mechanism 8 4 then places the contact structure 30 on the joint 32 of the substrate 20. The contact structure 30 is joined to the joining site 3 2 via a conventional joining procedure. Fig. 8 is a perspective view showing an example of a contact mechanism such as a contact probe having a contact structure produced by the present invention. Each contact structure 30 is attached to the surface of the pad via bonding. Bonding techniques include brazing, ultrasonic bonding, conductive bonding, welding, and microwave bonding. 9A-9F are examples of contact structures produced by the process of the present invention. Fig. 9A-9F are only a few examples, and not all shapes are included. Therefore, other contact structure shapes are also applicable. When bonded to a contact mechanism, such as a probe card made of a printed circuit board, and pressed against the target object to be contacted, such as a pad on a semiconductor wafer to be tested, the contact structure shown in Figs. 9A-9F The contact force is developed due to the effect of the spring, and a rubbing effect is produced on the surface of the contacted target. According to the process of the present invention, a relatively simple technique can be used to produce a large number of horizontal contact structures on a silicon substrate. The produced contact structure can be removed 'from the substrate and bonded to a contact mechanism such as a probe card in a vertical direction. The contact structure produced by the invention not only has low cost and high efficiency, but also has high mechanical strength and reliability. The contact structure produced by the method of the present invention is convenient for testing L S I and the like of a semiconductor wafer 'package, including a burn-in test. Although the text is described and described in a specific preferred embodiment, it is very clear. ¾ Applicable II] Depress National Standards Abundance (CNS) Al -18- ------ r I r-:- -^ -------- Order --------- line. {Please read the notes on the back before filling this page) 440897 A7 B7 V. Description of the invention (16) Changes and changes There are too many deities of Mingfa in the Mingfa, but the template of Neimingwei's 'Publishing Fanli' should be attached to the local capital. • 2: ij's desire and surrounding (please read the notes on the back first) (Fill in this page again) Packing -------- Order ---------- Employee Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs · 111¾ The meaning of this paper: Use Zhongwei National Standard (CN S ) A- 彳 specifications (2) 0 X 297 male t)-19-

Claims (1)

Α8 Β8 C8 D8 六、申請專利範圍 1 . 一種生產接觸結構的方法，其步驟包括： 在砂基底表面上成形一犧牲層； (請先閱讀背面之注意事項再填寫本頁) 在犧牲層上以導電材料成形一導電層； 在導電層上成形一光阻層； 在光阻層上對準一光罩，並以紫外線透過光罩對光阻 層曝光，光罩中包括接觸結構的影像； 顯影光阻層上的影像，它在光阻層上形成開口： 以沈積法在開口中成形由導電材料構成的接觸結構； 去除光阻層； 以第一蝕程去除犧牲層，以使接觸結構脫離矽基底； 以及 以第二蝕程去除接觸結構上的導電層。 '2 .如申請專利範圍第1項生產接觸結構的方法，在 對準與曝光的步驟中，是使用電子束或X —射線通過光罩 對光阻層曝光。 經濟部智慧財產局員工消費合作社印- 3 .如申請專利範圍第1項生產接觸結構的方法，在 對準與曝光的步驟中，是使用電子束、X —射線或雷射對 光阻層直接曝光以定義接觸結構的影像。 4 .如申請專利範圍第1項生產接觸結構的方法，進 一步包括在犧牲層與導電層間成形黏著促進層的步驟。 5 .如申請專利範圍第1項生產接觸結構的方法，其 中導電層所使用的導電材料與接觸結構的導電材料不同。 β .如申請專利範圍第4項生產接觸結構的方法，其 中的黏著促進層的材料是鉻（C r )或駄（丁 1 )。 -20- 本紙張尺度遶用中國國家標準（CNS)A.l規格（21ϋ X 297公爱） 8888 ABaD 440897 六、申請專利範圍 (請先閱讀背面之注意事項再填寫本頁) 7 · —種生產具有接觸結構之接觸機構的方法，每一 個接觸結構都顯現簧力’以建立與被接觸之目標物間的電 氣接觸，其步驟包括： 在矽基底表面上成形一犧牲層； 在犧牲層上以導電材料成形一導電層； 以光學製版法在矽基底上的水平方向成形接觸結構； 從矽基底及從導電層上取下接觸結構： 將接觸結構朝既定方向排列； 定位具有接合部位的接觸機構或接觸結構，以便將接 觸結構接合於其上；以及 拾取至少其中一個接觸結構並置於接觸機構之接合接 墊上的既定位置。 其 及 進 黏 8 .如申請專利範圍第7項生齒:_構的方法 中光學製版法包括塗敷光阻、遮罩、曝光、去除光阻 沈積導電材料° 纖i秦 9 .如申請專利範圍第7項^的方法 經濟部智慧財產局員工消費合作社印g 頃生產# 一步包括在犧牲層與導電層間成形黏著促進層的步驟 著促進層的材料是鉻（C r )或鈦fΐ 10 ·如申請專利範圍第生產構的方法 其中在光學製版法中的導電材料沈積步驟是利用導電層所 進行的電鍍。 Ί 1 ·—種生產接觸結構的方法’其步驟包括·· 在矽基底表面上成形一犧牲層； 在犧牲層上以導電材料成形一導電層； -21 - 本紙張尺度適用中國固家標準（CNS)A-l規格ΟΠΟ =< 297公芨） 440897 A8 B8 C8 D8 t、申請專利範圍 在導電層上成形一光阻層； (請先閱讀背面之注意事項再填寫本頁) 在光阻層上對準一光罩，並以紫外線透過光罩對光阻 層曝光’光罩中包括接觸結構的影像； 顯影光阻層上的影像，它在光阻層上形成開口： 以電鍍法在開口中成形由導電材料製成的接觸結構： 去除光阻層； 將膠帶置於接觸結構上，以使接觸結構的上表面黏附 於膠帶；以及 以蝕程去除犧牲層及導電層，以使膠帶上的接觸結構 脫離矽基底。 12.如申請專利範圍第11項生產接觸結構的方法 ，在對準與曝光的步驟中，是使用電子束或χ_射線通過 光罩對光阻層曝光。 1 3 .如申請專利範圍第1 1項生產接觸結構的方法 ，在對準與曝光的步驟中，是使用電子束、X —射線或雷 射對光阻層直接曝光以定義接觸結構的影像。 經濟部智慧財產局員工消費合作社印絮 14·如申請專利範圍第11項生產接觸結構的方法 ，進一步包括在犧牲層與導電層間成形黏著促進層的步驟 C· 1 5 .如申請專利範圍第1 1項生產接觸結構的方法 ，其中的犧牲層是由二氧化矽構成。 1 6 .如申請專利範圍第1 1項生產接觸結構的方法 ，其中導電層所使用的導電材料與接觸結構的導電材料不 同。 -22- 本纸張尺度適用中®國家標準（CNSM4規格（210x 297公釐） D 37 經濟部智慧財產局員工消费合作杜印製 D8 六、申請專利範圍 1 7 .如申請專利範圍第1 4項生產接觸結構的方法 ’其中的黏者促進層的材料是鉻（C r )或鈦（τ i )。 18· 種生產具有接觸結構之接觸機構的方法，每 一個接觸結構都顯現簧力，以建立與被接觸之目標物間的 電氣接觸，其步驟包括： 在较基底表面上成形一犧牲層； 在犧牲層上以導電材料成肜一導電層； 以光學製版法在矽基底上的水平方向成形接觸結構； 將接觸結構從砍基底轉移到膠帶； 將具有接觸結構的膠帶定位，並從其上取下接觸結構 將接觸結構朝向既定方向； 定位具有接合部位的接觸機構，以便將接觸結構接合 於其上；以及 將接觸結構置於接觸機構之接合部位上的既定位置， 並將接觸結構與接合部位接合。 1 9 .如申請專利範圍第1 8項構的方法 ，進一步包括在犧牲層與導電層間成形黏著促進層的步驟 ，黏著促進層的材料是鉻（C r )或駄'·( τ )。 2 0 ‘如申請專利範圍第1 8項冓的方法 ，其中的接觸結構是由銅（C u )、鎳（N :)、鋁（ A 1 ) '鉑（P d )、或鎢（W )製成。 2 1 .如申請專利範圍第1 ，其中導電層所使用的導電材料與接觸結構的導電材料不 本紙張尺度適用中囤囤家標準（CNS)A4規格（210 χ 297公芨） -23- _____I ♦ ♦ n ^1· n ^^1 in I k · nf n n 4^1 1^1 «n ^^1 ,- 4 f ^^1 I (請先M讀背面之注意事項再填寫本頁) A8 B8 C8 D8 六、申請專利範圍 同。 (請先閱讀背面之注意事項再填寫本頁) ^ --------訂·-------I 1 經濟部智慧財產局員工消費合作社印製 本紙張尺度適用中國國家標準（CNS)A4規袼（210 X 297公釐） -24-Α8 Β8 C8 D8 6. Application for Patent Scope 1. A method for producing contact structure, the steps include: forming a sacrificial layer on the surface of the sand substrate; (Please read the precautions on the back before filling this page). A conductive material is used to form a conductive layer; a photoresist layer is formed on the conductive layer; a photomask is aligned on the photoresist layer, and the photoresist layer is exposed through the photomask through ultraviolet rays, and the photomask includes an image of a contact structure; development An image on the photoresist layer, which forms an opening in the photoresist layer: a contact structure made of a conductive material is formed in the opening by a deposition method; the photoresist layer is removed; the sacrificial layer is removed by a first etching process to release the contact structure A silicon substrate; and removing the conductive layer on the contact structure with a second etch. '2. The method of producing a contact structure as described in the first item of the patent application scope, in the steps of alignment and exposure, uses an electron beam or X-ray to expose the photoresist layer through a photomask. Employees' Cooperative Cooperative Seal of the Intellectual Property Bureau of the Ministry of Economic Affairs-3. If the method of producing a contact structure in the scope of patent application No. 1 is used, in the steps of alignment and exposure, an electron beam, X-ray or laser is used to directly contact the photoresist layer. Exposure to define the image of the contact structure. 4. The method for producing a contact structure according to item 1 of the patent application scope, further comprising the step of forming an adhesion promoting layer between the sacrificial layer and the conductive layer. 5. The method of producing a contact structure as described in item 1 of the scope of patent application, wherein the conductive material used in the conductive layer is different from the conductive material of the contact structure. β. The method for producing a contact structure according to item 4 of the scope of the patent application, wherein the material of the adhesion promoting layer is chromium (C r) or thallium (D 1). -20- This paper uses Chinese National Standard (CNS) Al specifications (21ϋ X 297 public love) 8888 ABaD 440897 6. Scope of patent application (please read the precautions on the back before filling this page) 7 In the method of contact mechanism of the contact structure, each contact structure exhibits a spring force to establish electrical contact with the contacted object. The steps include: forming a sacrificial layer on the surface of the silicon substrate; and conducting electricity on the sacrificial layer. Forming a conductive layer from a material; forming a contact structure on a silicon substrate in a horizontal direction by an optical plate-making method; removing the contact structure from the silicon substrate and the conductive layer: aligning the contact structure in a predetermined direction; positioning a contact mechanism having a joint portion or A contact structure for engaging the contact structure thereon; and picking up at least one of the contact structures and placing the contact structure at a predetermined position on a joint pad of the contact mechanism. Its and the adhesion 8. If the patent application scope No. 7 raw teeth: the optical platemaking method in the method includes coating photoresist, masking, exposing, removing photoresist and depositing conductive materials. Method of scope item 7 ^ The production of consumer co-operatives printed by the Intellectual Property Bureau of the Ministry of Economic Affairs is one step. The step includes the step of forming an adhesion promoting layer between the sacrificial layer and the conductive layer. The material of the promoting layer is chromium (C r) or titanium fΐ 10 · For example, the method for producing a structure in the scope of patent application wherein the conductive material deposition step in the optical plate-making method is electroplating using a conductive layer. Ί 1 · —A method for producing a contact structure ', the steps of which include: · forming a sacrificial layer on the surface of a silicon substrate; forming a conductive layer with a conductive material on the sacrificial layer; -21-This paper standard applies Chinese solid standards ( CNS) Al specification 〇ΠΟ = < 297 g) 440897 A8 B8 C8 D8 t, patent application scope forming a photoresist layer on the conductive layer; (Please read the precautions on the back before filling this page) on the photoresist layer Align a photomask and expose the photoresist layer with UV through the photomask. The photo of the photoresist layer includes the contact structure; develop the image on the photoresist layer, which forms an opening in the photoresist layer: electroplating in the opening Forming a contact structure made of a conductive material: removing the photoresist layer; placing the tape on the contact structure so that the upper surface of the contact structure adheres to the tape; and removing the sacrificial layer and the conductive layer by an etching process so that the The contact structure is separated from the silicon substrate. 12. The method for producing a contact structure according to item 11 of the scope of patent application, in the steps of alignment and exposure, the photoresist layer is exposed through a photomask using an electron beam or x-ray. 1 3. According to the method for producing contact structure of item 11 in the scope of patent application, in the steps of alignment and exposure, the photoresist layer is directly exposed using electron beam, X-ray or laser to define the image of the contact structure. Printed by the Consumers' Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 14. If the method of producing a contact structure in the scope of patent application No. 11 further includes the step C · 15 of forming an adhesion promoting layer between the sacrificial layer and the conductive layer. A method for producing a contact structure, wherein the sacrificial layer is made of silicon dioxide. 16. The method for producing a contact structure according to item 11 of the scope of patent application, wherein the conductive material used in the conductive layer is different from the conductive material of the contact structure. -22- The paper size applies to the national standard (CNSM4 specification (210x 297 mm) D 37 Consumption cooperation by employees of the Intellectual Property Bureau of the Ministry of Economic Affairs Du printed D8 6. Scope of patent application 1 7. If the scope of patent application is No. 1 4 Item "Method of producing contact structure" wherein the material of the adhesion promoter layer is chromium (C r) or titanium (τ i). 18. · A method of producing a contact mechanism having contact structures, each contact structure exhibits a spring force, To establish electrical contact with the contacted target, the steps include: forming a sacrificial layer on the surface of the substrate; forming a conductive layer with a conductive material on the sacrificial layer; using optical platemaking on a silicon substrate. Form the contact structure in the direction; transfer the contact structure from the chopped substrate to the tape; position the tape with the contact structure and remove the contact structure from it to orient the contact structure to the predetermined direction; position the contact mechanism with the joint site so that the contact structure Engage the contact structure; and place the contact structure in a predetermined position on the joint portion of the contact mechanism, and connect the contact structure with the joint portion 19. The method of claim 18, further comprising the step of forming an adhesion promotion layer between the sacrificial layer and the conductive layer, and the material of the adhesion promotion layer is chromium (Cr) or 駄 '· (τ). 2 0 'The method according to item 18 of the scope of the patent application, wherein the contact structure is made of copper (C u), nickel (N :), aluminum (A 1)' platinum (P d), or tungsten (W) 2 1. As described in the first patent application, the conductive material used in the conductive layer and the conductive material of the contact structure are not applicable to the paper standard (CNS) A4 (210 χ 297 cm) in this paper standard- 23- _____I ♦ ♦ n ^ 1 · n ^^ 1 in I k · nf nn 4 ^ 1 1 ^ 1 «n ^^ 1,-4 f ^^ 1 I (Please read the precautions on the back before filling in this (Page) A8 B8 C8 D8 6. The scope of patent application is the same. (Please read the precautions on the back before filling in this page) ^ -------- Order · ------ I 1 Intellectual Property of the Ministry of Economic Affairs The paper size printed by the Bureau ’s Consumer Cooperatives applies the Chinese National Standard (CNS) A4 (210 X 297 mm) -24-
TW088120847A 1998-11-30 1999-11-30 Method for producing contact structures TW440897B (en)

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US09/201,299 US6297164B1 (en) 1998-11-30 1998-11-30 Method for producing contact structures
US09/222,176 US5989994A (en) 1998-12-29 1998-12-29 Method for producing contact structures

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DE19957326A1 (en) 2000-05-31
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